A film forming method for forming a film on a workpiece is disclosed including: supplying a source gas into a treatment container provided with the workpiece to adsorb the source gas on the workpiece, and then purging an inside of the treatment container with a first purge gas, and supplying a reaction gas into the treatment container after the source gas supply process to oxidize the source gas adsorbed on the workpiece, and then purging the inside of the treatment container with a second purge gas, in which for example, the source gas and a first catalyst gas are supplied to the treatment container in the source gas supply process, the reaction gas and a second catalyst gas are supplied to the treatment container in the reaction gas supply process, and the same or different non-aromatic amine gas are used as the first catalyst gas and the second catalyst gas.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Composition (4) contains fragmented materials (3) obtained by fragmenting a human tooth and is suitable as a scaffold for human dental pulp cells because the cross-section of a tooth contains dentine and dentinal tubules. Furthermore, because of a human tooth, it is possible to induce odontoblasts from human dental pulp cells and lead to the regeneration/repair of dentine without making the patient feel anxious about drugs. Therefore, by using a dental composition containing the fragmented material of a human tooth, dental pulp tissue can be repaired/regenerated, and it is easy to ensure the safety of substances used in dental pulp regeneration therapy.
A method for producing a purified gas containing carbon dioxide gas, comprising: a first concentration step in which an intermediate gas having a higher concentration of carbon dioxide gas than a target gas is produced by vacuum regeneration pressure swing adsorption using a first adsorption tower that adsorbs carbon dioxide gas from the target gas containing carbon dioxide gas; and a second concentration step in which the purified gas having an even higher concentration of carbon dioxide gas than the intermediate gas is produced by vacuum regeneration pressure swing adsorption using a second adsorption tower that adsorbs carbon dioxide gas from the intermediate gas or membrane separation.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/14 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by absorption
A facility (100) for producing liquefied carbon dioxide comprises: a combustion apparatus (200) for burning a combustible material; a generation device (300) for generating oxygen; a supply mechanism (400) for returning the combustion gas generated by burning the combustible material in the combustion apparatus (200) to the combustion apparatus (200) and supplying oxygen to the combustion apparatus (200); and a production device (500) for producing liquefied carbon dioxide from the combustion gas generated in the combustion apparatus (200).
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
F25J 1/00 - Processes or apparatus for liquefying or solidifying gases or gaseous mixtures
F25J 3/04 - Processes or apparatus for separating the constituents of gaseous mixtures involving the use of liquefaction or solidification by rectification, i.e. by continuous interchange of heat and material between a vapour stream and a liquid stream for air
5.
LIQUEFIED METHANE PRODUCTION METHOD AND LIQUEFIED METHANE PRODUCTION APPARATUS
Provided is a method for producing liquefied methane from a biogas containing a methane gas, a carbon dioxide gas, a nitrogen gas, an oxygen gas, an argon gas and water or an enriched gas obtained by enriching the methane gas in the biogas, the method comprising a first step for separating the carbon dioxide gas and water from the biogas or the enriched gas to produce an intermediate gas and a second step for subjecting the intermediate gas to distillation separation using a distillation column to produce liquefied methane.
F25J 3/02 - Processes or apparatus for separating the constituents of gaseous mixtures involving the use of liquefaction or solidification by rectification, i.e. by continuous interchange of heat and material between a vapour stream and a liquid stream
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
F25J 3/08 - Separating gaseous impurities from gases or gaseous mixtures
6.
METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
There is provided a technique that includes: providing a substrate including a conductive film and an insulating film on a surface of the substrate; and forming an oxide film on a surface of the insulating film, among the conductive film and the insulating film, by supplying a halogen-free precursor, an oxidizing agent, and a catalyst to the substrate under a non-plasma atmosphere.
B01J 31/02 - Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
7.
SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR SEMICONDUCTOR ELEMENT
A semiconductor element and a method for manufacturing a semiconductor element improving heat dissipation are provided. A semiconductor element includes a Ga2O3(gallium oxide) substrate, a single-crystal SiC layer formed at one principal surface side of the Ga2O3 substrate, and a Schottky electrode formed at the one principal surface side of the Ga2O3 substrate and controls current flowing inside the Ga2O3 substrate.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/26 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , ,
Disclosed is a method for forming a silicon oxide film, the method comprising: a preparation step in which a base material is prepared within a reactor; a first introduction step in which at least one silicon compound represented by formula (1) is introduced into the reactor; a first purge step in which the reactor is purged with a purging gas; a second introduction step in which an oxygen source is introduced into the reactor; and a second purge step in which the reactor is purged with the purging gas. The process from the first introduction step to the second purge step is repeatedly performed until a silicon oxide film having a desired thickness is deposited on the surface of the base material. The process from the first introduction step to the second purge step is performed at a temperature of 300°C to 800°C and a pressure of 7.6 Pa to 100 kPa. The average roughness of the thickness of the thus-formed silicon oxide film is 10% or less relative to the thickness of the thus-formed silicon oxide film.
Provided is a biogas storage apparatus provided with: a tank which contains an adsorbent capable of adsorbing a biogas and in which the biogas is stored; a biogas introduction/discharge piping which is connected to the tank and through which the biogas is introduced into the tank and the biogas is discharged from the tank; and a biogas return piping which connects the tank and the biogas introduction/discharge piping and through which at least a portion of the biogas discharged from the tank is returned to the tank.
Provided is a method for forming a silicon oxide film, the method including a preparation step for preparing a substrate within a reactor, a first introduction step for introducing at least one silicon compound expressed by formula (1) into the reactor, a first purging step for purging the reactor using a purge gas, a second introduction step for introducing an oxygen source into the reactor, and a second purging step for purging the reactor using the purge gas, the steps from the first introduction step to the second purging step being carried out at a temperature of 650°C to 800°C and a pressure of 7.6 Pa to 100 kPa. In formula (1): R1is a methoxy group or an ethoxy group; R2is a hydrogen atom, a methyl group, an ethyl group, a methoxy group, or an ethoxy group; R3is a hydrogen atom, a methyl group, an ethyl group, a methoxy group, an ethoxy group, a group expressed by formula (2), or a group expressed by formula (3); and R4is a group expressed by formula (2) or a group expressed by formula (3). In formulas (2) and (3), each of R5to R10 independently is a hydrogen atom, a methyl group, or an ethyl group.
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
11.
COMPOUND SEMICONDUCTOR SUBSTRATE AND COMPOUND SEMICONDUCTOR DEVICE
A compound semiconductor substrate and a compound semiconductor device with high quality is provided. The compound semiconductor substrate includes a Si substrate with O concentration of 3*1017/cm3 or more and 3*1018/cm3 or less, a SiC layer formed on the Si substrate, a first nitride semiconductor layer made of AlxGa1-xN (0.1≦x≦1), formed on the SiC layer and including an insulating or semi-insulating layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and containing a C-GaNlayer, and an electronic traveling layer formed on the second nitride semiconductor layer and comprising of AlzGa1-zN (0≦z<0.1). The sum total thickness of the first nitride semiconductor layer, the second nitride semiconductor layer and the electronic traveling layer is 6 micrometers or more and 10 micrometers or less.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
A method for manufacturing purified gas including carbon dioxide gas, the method comprising: a first concentration step for generating an intermediate gas having a higher concentration of carbon dioxide gas than a target gas, which includes carbon dioxide gas, by vacuum regeneration pressure swing adsorption that uses a first adsorption tower that adsorbs carbon dioxide gas from the target gas; and a second concentration step for generating the purified gas, which has an even higher concentration of carbon dioxide gas than the intermediate gas, by vacuum regeneration pressure swing adsorption or pressure swing adsorption that uses a second adsorption tower that adsorbs carbon dioxide gas from the intermediate gas, or by membrane separation.
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A compound semiconductor substrate and a method for manufacturing the same are provided to suppress surface roughness of a barrier layer while suppressing gate leak.
A compound semiconductor substrate and a method for manufacturing the same are provided to suppress surface roughness of a barrier layer while suppressing gate leak.
A method for manufacturing of a compound semiconductor substrate comprises a step forming an electronic traveling layer consisting of a first nitride semiconductor, a step forming a barrier layer consisting of a second nitride semiconductor with a wider band gap than a band gap of the first nitride semiconductor on the electronic traveling layer, and a step forming a cap layer with an organometallic vapor phase epitaxy on the barrier layer and in contact with the barrier layer. The cap layer has a C concentration of 5*1017 atoms/cm3 or more and 1*1020 atoms/cm3 or less, and consists of a nitride semiconductor. During the step forming the cap layer, source gas of the nitride semiconductor forming the cap layer and hydrocarbon gas are introduced to a top surface of the barrier layer.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
15.
SUBSTRATE-PROCESSING METHOD, SUBSTRATE-PROCESSING DEVICE, AND PROGRAM
The present invention has: a step of providing a substrate having exposed on a surface thereof an electrically conductive film and an insulating film; and a step of selectively forming an oxide film on the surface of the insulating film out of the electrically conductive film and the insulating film, by supplying to the substrate a catalyst, an oxidant, and a raw material that does not contain halogen in a non-plasma atmosphere.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
Provided is a film-forming method that enables formation of a film having a high density on a treatment target object to be treated, at a preferable film formation rate at a low temperature, and that is applicable to industrial production. The present invention is a film-forming method that is for forming a film on a treatment target object, and is characterized by comprising: a raw material gas supply step for supplying a raw material gas to a treatment container in which the treatment target object is placed, so that the raw material gas is adsorbed onto the treatment target object, and thereafter, purging the treatment container using a first purge gas; and a reaction gas supply step for supplying a reaction gas to the treatment container after the raw material gas supply step, so that the raw material gas adsorbed onto the treatment target object is oxidized, and thereafter, purging the treatment container using a second purge gas. The method is characterized in that, for example, the raw material gas and a first catalyst gas are supplied to the treatment container in the raw material gas supply step, the reaction gas and a second catalyst gas are supplied to the treatment container in the reaction gas supply step, and the same type or different types of non-aromatic amine gas are used as the first and second catalyst gases.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
17.
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
[Problem] To provide: a semiconductor substrate which is capable of improving the quality of a nitride semiconductor layer; a semiconductor device; a method for producing a semiconductor substrate; and a method for producing a semiconductor device. To further provide: a semiconductor substrate which is capable of improving the performance of a device; a semiconductor device; a method for producing a semiconductor substrate; and a method for producing a semiconductor device. [Solution] A semiconductor substrate according to the present invention is provided with: a heat transfer layer; a silicon carbide (SiC) layer that is formed on one main surface side of the heat transfer layer, while having a 3C crystal structure; a bonding layer that is formed between the heat transfer layer and the SiC layer; and a nitride semiconductor layer that is formed on one main surface of the SiC layer.
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
18.
METHOD FOR MANUFACTURING PURIFIED GAS, METHOD FOR MANUFACTURING DRY ICE, DEVICE FOR MANUFACTURING PURIFIED GAS, AND DEVICE FOR MANUFACTURING DRY ICE
This method for manufacturing purified gas including carbon dioxide gas comprises: a first concentration step for generating an intermediate gas having a higher concentration of carbon dioxide gas than a target gas, which includes carbon dioxide gas, by vacuum regeneration pressure swing adsorption that uses a first adsorption tower that adsorbs carbon dioxide gas from the target gas; and a second concentration step for generating the purified gas, which has an even higher concentration of carbon dioxide gas than the intermediate gas, by membrane separation or vacuum regeneration pressure swing adsorption that uses a second adsorption tower that adsorbs carbon dioxide gas from the intermediate gas.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
In this method for managing a cylinder, a cylinder (500) is managed. The cylinder (500) includes a tank that stores a liquid. The cylinder (500) also includes a sensor that measures information for managing the cylinder. The cylinder (500) further includes a communication device that transmits a value measured by the sensor. In the cylinder (500), the sensor and the communication device are attached to the tank having an outer periphery covered with a fiber-reinforced plastic layer, or to a bottom portion of the tank.
C30B 33/04 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 21/425 - Bombardment with radiation with high-energy radiation producing ion implantation
A film forming apparatus and a film forming apparatus usage. The film forming apparatus has a film forming chamber, a substrate retaining part, a heating unit, a shower head, and a physical characteristics detector. The physical characteristics detector includes an irradiation part that irradiates a film formed on a surface of a substrate with a beam, a receiver to receive the beam reflected by the film, and a detection unit that detects physical characteristics of the film based on the beam received by the receiver. The shower head includes a supply plane facing the film forming plane, multiple discharge outlets provided in the supply plane, a main body to transport source gas to the multiple discharge outlets, a first transmissive part that transmits the beam emitted by the irradiation part, and a second transmissive part that transmits the reflected beam and is located at a different position than the first transmissive part.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
G01N 23/207 - Diffractometry, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
A composition 4 contains a ground product 3 obtained by grinding human teeth, and provides appropriate scaffolds for human dental pulp cells since dentine and dentinal tubules are present in a cross-section of a tooth. Further, it possible to induce odontoblasts from human dental pulp cells and cause regeneration/reparation of dentine, without bringing unease to a patient about medicinal agents since human teeth is used. Therefore, by using a dental composition containing a ground product of human teeth, it is possible to cause reparation/regeneration of dental pulp tissues, and makes it easy to assure the safety of materials used in a regenerative therapy for dental pulp.
Provided is a water quality management apparatus for an aquaculture pond, the apparatus having a storage unit for storing water quality-related measured values measured at appropriate time intervals by external sensors set in the aquaculture pond, an assessment unit for calculating a predicted future value on the basis of fluctuations in the measured values and determining the time when the predicted value will exceed a reference value that indicates deterioration of water quality, and a display unit for displaying the time when the reference value will be exceeded. Said time is the time when exchange of pond water will be necessary.
[Problem] To provide: a pellicle capable of suppressing cracking of a pellicle film; and a method for manufacturing the pellicle. [Solution] This pellicle comprises: a silicon (Si) border including a boron (B)-containing Si layer; and a pellicle film formed on a surface side of the Si layer. Preferably, the Si border includes a through-hole, and the pellicle film is exposed on the bottom surface of the through-hole.
C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof characterised by the frames, e.g. structure or material thereof
A pellicle intermediary body, a pellicle, a method for manufacturing a pellicle intermediary body, and a pellicle manufacturing method are provided. A pellicle intermediary body has a Si substrate, a Si oxide film formed on a surface of the Si substrate, and a Si layer formed on a surface of the Si oxide film. The Si layer includes a low COP (Crystal Originated Particle) portion which is a part where the number of COPs decreases as it approaches the surface of the Si layer and is formed in the part that constitutes the surface of the Si layer.
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof characterised by the frames, e.g. structure or material thereof
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
26.
Compound semiconductor substrate, a pellicle film, and a method for manufacturing a compound semiconductor substrate
A method for manufacturing a compound semiconductor substrate that can achieve thinning of SiC film, wherein the method includes forming a SiC film on one principal surface side of a Si substrate and forming a recessed part in which a bottom surface is Si in a central part of another principal surface of the Si substrate.
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
A nozzle (160) is connected to a mixing unit (150), and ejects mixed gas (30). The nozzle (160) includes, in this order, a large diameter portion (170), a contracting diameter portion (180), and a slit portion (190). The large diameter portion (170) is connected to the mixing portion (150), and has a first inner circumferential surface (171) having a constant inner diameter (171D). The contracting diameter portion (180) is connected to the large diameter portion (170), and has a second inner circumferential surface (181) having a diameter which contracts with increasing distance from the large diameter portion (170). The slit portion (190) extends in a direction perpendicular to the axial direction of the nozzle (160), and is provided from the tip end of the nozzle (160) in the axial direction of the nozzle (160) to a position continuous with the second inner circumferential surface (181), while penetrating through the nozzle (160). A space inside the slit portion (190) communicates with a space inside the second inner circumferential surface (181).
A compound semiconductor substrate has a Si (silicon) substrate, a first Al nitride semiconductor layer which is a graded layer formed on the Si substrate and whose Al concentration decreases as the distance from the Si substrate increases along the thickness direction, a GaN (gallium nitride) layer formed on the first Al nitride semiconductor layer and having a lower average Al concentration than the average Al concentration of the first Al nitride semiconductor layer, and a second Al nitride semiconductor layer formed on the GaN layer and having a higher average Al concentration than the average Al concentration of the GaN layer. The threading dislocation density at any position in the thickness direction within the second Al nitride semiconductor layer is lower than the threading dislocation density at any position in the thickness direction within the first Al nitride semiconductor layer.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/26 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , ,
H01L 29/267 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , in different semiconductor regions
H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
29.
COMPOUND SEMICONDUCTOR SUBSTRATE AND COMPOUND SEMICONDUCTOR DEVICE
[Problem] To provide a high-quality compound semiconductor substrate and compound semiconductor device. [Solution] A compound semiconductor substrate comprises: an Si substrate having an O concentration of３×1017mol/cm3to 3×1018mol/cm3x1-xz1-z1-zN (0≦z<0.1). The total thickness of the first nitride semiconductor layer, second nitride semiconductor layer, and electron transit layer is 6-10 μｍ inclusive.
[Problem] To provide: a compound semiconductor substrate that can suppress surface roughness of a barrier layer while suppressing gate leakage; and a method for manufacturing the compound semiconductor substrate. [Solution] This method for manufacturing a compound semiconductor substrate comprises: a step for forming an electron transit layer comprising a first nitride semiconductor; a step for forming, on the electron transit layer, a barrier layer comprising a second nitride semiconductor with a band gap wider than the band gap of the first nitride semiconductor; and a step for forming a cap layer on the barrier layer and in contact with the barrier layer, using a metal-organic vapor phase growth method. The cap layer has a carbon concentration of at least 5 × 1017atoms/cm3and no greater than 1 × 1020atoms/cm3, and comprises a nitride semiconductor. In the step for forming a cap layer, a raw-material gas of the nitride semiconductor that constitutes the cap layer, and a hydrocarbon gas are introduced onto an upper surface of the barrier layer.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/267 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , in different semiconductor regions
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/167 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form further characterised by the doping material
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
A liquefied natural gas supply facility (1) comprises: a storage tank (20) for storing liquefied natural gas; a delivery line (L1) and a dispenser (30) for delivering the liquefied natural gas stored in the storage tank (20) and supplying the liquefied natural gas to the outside; and a reflux line (L2) for returning the liquefied natural gas introduced into the dispenser (30) back to the storage tank (20). A delivery port (21), provided in the storage tank (20), for delivering the liquefied natural gas to the delivery line (L1) is located in a position higher than a supply port (31), provided in the dispenser (30), for delivering the liquefied natural gas to the outside.
A film forming apparatus and a film forming apparatus usage that can improve accuracy of thickness of afilm formed are provided. The film forming apparatus has a film forming chamber, a substrate retaining part, a heatingunit, a shower head, and a physical characteristics detector. The physical characteristics detector includes an irradiation part that irradiates a film formed on a surface of a substrate with a beam, a receiver to receive the beamreflected by the film, and a detection unit that detects physical characteristics of the film based on the beam receivedby the receiver. The shower head includes a supply plane facing the film forming plane, multiple discharge outlets provided in the supply plane, a main body to transport source gas to the multiple discharge outlets, a first transmissive part that transmits the beam emitted by the irradiation part, and a second transmissive part that transmits the reflected beam and is located at a different position than the first transmissive part.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
34.
FILM-FORMING APPARATUS AND METHOD OF USING FILM-FORMING APPARATUS
Provided are: a film-forming apparatus capable of improving the accuracy of the thickness of films being formed; and a method of using the film-forming apparatus. This film-forming apparatus is provided with a film-forming chamber, a substrate-holding part, a heating part, a shower head, and a physical property-detecting unit. The physical property-detecting unit includes an irradiation unit that irradiates a film formed on a film formation surface of a substrate with a beam, a reception unit that receives the beam reflected by the film, and a detection unit 53 that detects physical properties of the film on the basis of the beam received by the reception unit. The shower head includes a supply surface facing the film formation surface, a plurality of outlets provided in the supply surface, a body that delivers a raw material gas to the plurality of outlets, a first transmission part that transmits the beam emitted by the emission unit, and a second transmission part that transmits the reflected beam and that is located at a position different from that of the first transmission section.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
C23C 14/54 - Controlling or regulating the coating process
A liquefied fluid supply system is a liquefied fluid supply system of supplying a nozzle with a liquefied fluid that vaporizes after spraying and includes: a supercooler that cools the liquefied fluid to a temperature lower than a saturation temperature thereof and makes the liquefied fluid into a supercooled liquid; and a booster that boosts in pressure the liquefied fluid made into the supercooled liquid by the supercooler and supplies the liquefied fluid to the nozzle.
A hydrogen generator having a reforming catalyst that causes hydrocarbon gas and steam to carry out a reforming reaction and reform into a hydrogen rich reformed gas, a reformer that is filled with said reforming catalyst and in which said reforming reaction is carried out, and a combustion chamber for combusting a fuel gas and obtaining reaction heat that is applied to said reforming reaction. At least the reforming region carrying out the reforming reaction is disposed inside the combustion chamber. A steam generator that introduces steam into the reformer is provided outside the combustion chamber.
C01B 3/38 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts
B01J 19/24 - Stationary reactors without moving elements inside
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
37.
PELLICLE INTERMEDIARY BODY, PELLICLE, METHOD FOR MANUFACTURING OF PELLICLE INTERMEDIARY BODY, AND PELLICLE MANUFACTURING METHOD
The present invention provides a pellicle intermediate, a pellicle, a method for manufacturing the pellicle intermediate and a method for manufacturing the pellicle, with which it is possible to improve the quality of a pellicle film. The pellicle intermediate comprises an Si substrate, an Si oxide film formed on the surface of the Si substrate, and an Si layer formed on the surface of the Si oxide film. The Si layer includes a low-COP part in which the number of crystal originated particles (COP) decreases as it comes closer to the surface of the Si layer and which is formed in a portion that constitutes the surface of the Si layer.
Provided is a carbonated water dispenser capable of increasing the solubility of carbon dioxide and generating strongly carbonated water. This carbonated water dispenser 10 which is capable of generating and discharging carbonated water 38 is characterized by: being provided with a generation unit 31 for generating the carbonated water 38 under pressure, a drinking water supply unit 32 for supplying drinking water 15b for producing the carbonated water 38 to the generation unit 31, a carbon dioxide supply unit 33 for supplying carbon dioxide for producing the carbonated water 38 to the generation unit 31 to which the drinking water 15b has been supplied, and a water discharging unit for discharging the carbonated water 38 generated in the generation unit 31; and by the generation unit 31 being provided with a stirring unit 34 for stirring the drinking water 15b when carbon dioxide supplied from the carbon dioxide supply unit 33 is dissolved in the drinking water 15b supplied from the drinking water supply unit 32.
Provided is a soda water dispenser that can produce and output a proper amount of soda water at an appropriate time in response to a user request and can be satisfactorily kept sanitary. The present invention is a soda water dispenser 10 that can produce and output soda water 38 at an appropriate time. The soda water dispenser 10 includes: a production unit 31 that produces the soda water 38 under pressure; a drinking water supply unit 32 that supplies drinking water for producing the soda water 38 to the production unit 31; a carbon dioxide supply unit 33 that supplies carbon dioxide for producing the soda water 38 to the production unit 31 to which the drinking water has been supplied; a water output unit for outputting the soda water 38 produced in the production unit 31; and a control unit 43 that controls the drinking water supply unit 32, the carbon dioxide supply unit 33, and the water output unit.
The present invention provides a pellicle intermediate, a pellicle, a method for manufacturing the pellicle intermediate and a method for manufacturing the pellicle, with which it is possible to improve the quality of a pellicle film. The pellicle intermediate comprises an Si substrate, an Si oxide film formed on the surface of the Si substrate, and an Si layer formed on the surface of the Si oxide film. The Si layer includes a low-COP part in which the number of crystal originated particles (COP) decreases as it comes closer to the surface of the Si layer and which is formed in a portion that constitutes the surface of the Si layer.
Provided is a compound semiconductor substrate which can be improved in the in-plane uniformity of a current-voltage property in the vertical direction. The compound semiconductor substrate has a center and an edge that is located apart by 71.2 mm from the center as observed planarly. When the thickness at the center in a GaN layer in the compound semiconductor substrate is defined as W1 and the thickness at the edge in the GaN layer is defined as W2, the thickness error ΔW expressed by the formula: ΔW(%) = ｜W1-W2｜×100/W1 is more than 0% and 8% or less. The average carbon concentration at the center of the GaN layer as determined in the depth direction is 3×1018/cm3to 5×1020/cm3 inclusive. When the carbon concentration at a depth-direction center position of the GaN layer at the center of the GaN layer is defined as a concentration C1 and the carbon concentration at a depth-direction center position of the GaN layer at the edge of the GaN layer is defined as a concentration C2, the concentration error ΔC expressed by the formula: ΔC(%) = ｜C1-C2｜×100/C1 is 0 to 50% inclusive.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
[Problem] To provide a compound semiconductor substrate with which it is possible to reduce the number of threading dislocations within a nitride semiconductor layer containing aluminum [Solution] A compound semiconductor substrate comprises: a silicon substrate; a first aluminum nitride semiconductor layer formed on the silicon substrate and being an inclined layer, the aluminum concentration of which decreases as distance from the silicon substrate increases in the thickness direction; a GaN (gallium nitride) layer formed on the first aluminum nitride semiconductor layer and having a lower average aluminum concentration than the average aluminum concentration of the first aluminum nitride semiconductor layer; and a second aluminum nitride semiconductor layer formed on the GaN layer and having an average aluminum concentration that is higher than the average aluminum concentration of the GaN layer. The threading dislocation density at an arbitrarily-defined position in the thickness direction within the second aluminum nitride semiconductor layer is lower than the threading dislocation density at an arbitrarily-defined position in the thickness direction within the first aluminum nitride semiconductor layer.
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
A pellicle and a method for manufacturing a pellicle that can improve the production yield ratio are provided. A method for manufacturing a pellicle comprises a step to prepare a supporting member containing Si, and a step to form a pellicle film on a top surface of the supporting member. The step to form the pellicle film includes: a step to form a SiC film with a first average carbon concentration on the top surface of the supporting member by carbonizing Si, and a step to form a SiC film with a second average carbon concentration different from the first average carbon concentration on the top surface of the SiC film. The method for manufacturing a pellicle further comprises a step to exposes at least a part of the reverse side of the SiC film by wet etching.
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof characterised by the frames, e.g. structure or material thereof
44.
COMPOUND SEMICONDUCTOR DEVICE, COMPOUND SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE
Provided are a compound semiconductor device, a compound semiconductor substrate, and a method for manufacturing a compound semiconductor device with which it is possible to increase mechanical strength, improve yield during production, and implement a device having a large area. A compound semiconductor device 100 includes: a Si substrate 1 which has a shape that surrounds a hole 21 in plan view; a SiC layer 3 that is formed on a top surface 1a of the Si substrate 1 and covers the hole 21; a nitride layer 10 that includes Ga and is formed on a top surface side of the SiC layer 3; a source electrode 13 that is formed on a top surface side of the nitride layer 10; a drain electrode 15; and a gate electrode 17. The electric current that flows between the source electrode 13 and the drain electrode 15 can be controlled by a voltage applied to the gate electrode 17. The Si substrate is not present in an area RG which overlaps the source electrode 13, the drain electrode 15, and the gate electrode 17 seen from a direction orthogonal to the top surface 1a of the Si substrate 1.
This apparatus for producing carbon monoxide gas is provided with: a reformer for obtaining a reformed gas from a material gas; a first pressurizing means for pressurizing a first mixed gas; a first separation device for obtaining a first refined gas by adsorbing and removing carbon dioxide gas from within the first mixed gas; a first recycled gas piping for drawing a first recycle gas out of the first separation device so as to obtain the first mixed gas; a second separation device for adsorbing at least carbon monoxide gas from within a second mixed gas; a second recycle gas withdrawal piping for drawing a second recycle gas out of the second separation device; a second pressurizing means for pressurizing the second recycle gas; a second recycle gas introduction piping for obtaining the second mixed gas; and a carbon monoxide gas withdrawal piping for drawing out the carbon monoxide gas that has been adsorbed to the second separation device.
B01J 23/89 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with noble metals
C01B 3/36 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using oxygen or mixtures containing oxygen as gasifying agents
C01B 3/38 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts
PRESSURE FEEDING UNIT FOR LOW-TEMPERATURE FLUID, PRESSURE FEEDING METHOD FOR LOW-TEMPERATURE FLUID, AND DEVICE COMPRISING PRESSURE FEEDING UNIT FOR LOW-TEMPERATURE FLUID
Provided are: a pressure feeding unit for low-temperature fluid, the pressure feeding unit recovering and using the cold energy of a low-temperature fluid before being suctioned into a vacuum pump and the heat energy of the low-temperature fluid after being discharged from the vacuum pump, thereby eliminating the need for a heater and a cooler as is conventionally required; a pressure feeding method for low-temperature fluid; and a device comprising the pressure feeding unit for low-temperature fluid. A pressure feeding unit 1 for low-temperature fluid pressure feeds a low-temperature fluid and comprises: a low-temperature fluid supply channel 11 that supplies the low-temperature fluid; a heat exchanger 12 that is provided to the low-temperature fluid supply channel 11 and heats the low-temperature fluid; a pressure feeding part 13 that is provided to the low-temperature fluid supply channel 11 downstream of the heat exchanger 12 and pressure feeds the low-temperature fluid heated by the heat exchanger 12; and a delivery channel 14 that delivers, via the heat exchanger 12, the low-temperature fluid that has been pressure-fed from the pressure feeding part 13. The low-temperature fluid is heated in the heat exchanger 12 by means of heat exchange with the low-temperature fluid flowing through the delivery channel 14 after being heated, thereby reaching a temperature range at which the pressure feeding part 13 can suction the low-temperature fluid.
A compound semiconductor substrate includes a SiC (silicon carbide) layer, a AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a composite layer formed on the Al nitride semiconductor layer, a GaN (gallium nitride) layer as an electron transition layer formed on the composite layer, and an Al nitride semiconductor layer as a barrier layer formed on the GaN layer. The composite layer includes C—GaN layers stacked in a vertical direction, and an AlN layer formed between the C—GaN layers.
H01L 29/267 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , in different semiconductor regions
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
48.
REFINED GAS MANUFACTURING DEVICE AND REFINED GAS MANUFACTURING METHOD
Provided are: a refined gas manufacturing device provided with a refinery tower for obtaining refined gas by removing at least water and oxygen in a raw material gas, the refinery tower including a first region and a second region, the first region being a region for removing at least water in the raw material gas by adsorption, the second region being a region for obtaining refined gas by removing at least oxygen in the raw material gas that has been passed through the first region; and a refined gas manufacturing method comprising introducing a raw material gas into a refinery tower including a first region and a second region, removing at least water in the raw material gas by adsorption in the first region, removing in the second region at least oxygen in the raw material gas from which water has been removed by adsorption in the first region, and deriving the raw material gas from which oxygen has been removed in the second region as refined gas.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
Provided is a purified gas manufacturing device provided with a catalyst tower for subjecting at least a combustible component of a feed gas to a catalytic reaction in the presence of oxygen, and a purification tower for obtaining purified gas by removing at least water content and oxygen in the feed gas that has passed through the catalyst tower, wherein; the purification tower contains a first region and a second region; the first region is a region in which at least water content in the feed gas is removed by adsorption; and the second region is a region in which at least oxygen in the feed gas that has passed through the first region is removed to obtain purified gas. Also provided is a purified gas manufacturing method.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
A method for manufacturing a compound semiconductor substrate comprises: a step to form an SiC (silicon carbide) layer on a Si (silicon) substrate, a step to form a LT (Low Temperature)-AlN (aluminum nitride) layer with a thickness of 12 nanometers or more and 100 nanometers or less on the SiC layer at 700 degrees Celsius or more and 1000 degrees Celsius or less, a step to form a HT (High Temperature)-AlN layer on the LT-AlN layer at a temperature higher than the temperature at which the LT-AlN layer was formed, a step to form an Al (aluminum) nitride semiconductor layer on the HT-AlN layer, a step to form a GaN (gallium nitride) layer on the Al nitride semiconductor layer, and a step to form an Al nitride semiconductor layer on the GaN layer.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
H01L 29/267 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , in different semiconductor regions
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
51.
LIQUEFIED FLUID SUPPLY SYSTEM AND LIQUEFIED FLUID SPRAYING APPARATUS
This liquefied fluid supply system (3) supplies, to a nozzle (4), a liquefied fluid (X) which is to be evaporated after sprayed, the liquefied fluid supply system (3) being provided with: a supercooling unit (5) which converts the liquefied fluid to a supercooled liquid by cooling the liquefied fluid to a temperature lower than a saturation temperature; and a pressurizing unit (6) that pressurizes the liquefied fluid, which has been supercooled by the supercooling unit, and that supplies the pressurized fluid to the nozzle.
A method for manufacturing of a pellicle that can simplify the manufacturing process is provided. The method for manufacturing of a pellicle comprises a step for forming a SiC film on a bottom surface of a Si substrate, a step for bonding a supporting member including a through hole to a bottom surface of the SiC film, and a step for removing the Si substrate, after bonding the supporting member.
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof characterised by the frames, e.g. structure or material thereof
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
A method for manufacturing a substrate with less warpage includes a step of forming SiC film 121 on a surface of Si substrate 11, a step of removing bottom surface RG2 which is at least a part of the Si substrate 11 contacting with the SiC film 121, and a step of forming another SiC film on a surface of SiC film 121 after the step of removing the bottom surface RG2.
The present invention provides a compound semiconductor substrate which may easily control a warp. The compound semiconductor substrate is provided with: an SiC (silicon carbide) layer; an AlN (aluminum nitride) buffer layer formed on the SiC layer; a lower composite layer formed on the AlN buffer layer; and an upper composite layer formed on the lower composite layer. The lower composite layer comprises: a plurality of lower Al (aluminum) nitride semiconductor layers laminated in a vertical direction; and lower GaN (gallium nitride) layers formed between the plurality of lower Al nitride semiconductor layers. The upper composite layer comprises: a plurality of upper GaN layers laminated in a vertical direction; and upper Al nitride semiconductor layers formed between the plurality of upper GaN layers.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Provided is a hydrogen generator which is suppressed in temperature unevenness in a reforming region and has improved thermal efficiency, while having good maintenance properties. A hydrogen generator according to the present invention is provided with: a reforming catalyst which causes a reforming reaction of a hydrocarbon-based gas with water vapor, thereby reforming the hydrocarbon-based gas into a hydrogen-rich reformed gas; a reformer 10 which is filled with the reforming catalyst, and in which the reforming reaction is carried out; and a combustion chamber 20 in which a fuel gas is combusted, thereby obtaining a reaction heat that is to be applied to the reforming reaction. At least a reforming region where the reforming reaction is carried out in the reformer 10 is arranged inside the combustion chamber 20; and a water vapor generator 30 which generates water vapor that is to be introduced into the reformer 10 is arranged outside the combustion chamber 20. Consequently, it is not necessary for the combustion chamber 20, which reaches to a high temperature, to comprise a complicated spiral structure, so that the production cost of this device is able to be greatly reduced and the maintenance properties thereof are significantly improved. In addition, uniformity of the temperature in the reforming region is able to be ensured, and thus decrease of reforming efficiency due to temperature variation is able to be prevented.
C01B 3/38 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts
C01B 3/56 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with solidsRegeneration of used solids
Provided are: a pellicle (1) which is capable of improving the production yield; and a method for producing a pellicle. This method for producing a pellicle comprises: a step for preparing a supporting body (3) that contains Si; and a step for forming a pellicle film (4) on the surface of the supporting body. The step for forming a pellicle film comprises: a step for forming an SiC film (121) that has a first average carbon concentration on the surface of the supporting body by carbonizing Si in the surface of the supporting body; and a step for forming an SiC film (122) that has a second average carbon concentration which is different from the first average carbon concentration on the surface of the SiC film. This method for producing a pellicle additionally comprises a step for having at least a part of the back surface of an SiC film (12) exposed by means of wet etching.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof characterised by the frames, e.g. structure or material thereof
57.
COMPOSITION, EPOXY RESIN-CURING AGENT, EPOXY RESIN COMPOSITION, THERMOSETTING COMPOSITION, CURED PRODUCT, SEMICONDUCTOR DEVICE, AND INTERLAYER INSULATING MATERIAL
This composition contains a maleimide compound (A) represented by general formula (1), an aminophenol compound (B) represented by general formula (2), and a phenol compound (C) represented by general formula (3). The composition has superior storage stability and is suitable as a curing agent for an epoxy resin composition which can have high flame resistance, high heat resistance, and low decomposition characteristics at high temperature. (In formula (1), Ar1 represents an optionally substituted arylene group having 6-12 carbon atoms, X1 represents a direct bond, a divalent hydrocarbon group having 1-6 carbon atoms, O, S, or SO2, and p represents an integer of 0-2.) (In formula (2), Ar2 represents an arylene group that has 6-12 carbon atoms and 0-2 hydroxy groups, and that optionally has a hydrocarbon substituent, X2 represents a direct bond, a divalent hydrocarbon group having 1-6 carbon atoms, O, S, or SO2, and q represents an integer of 0-2.) (In formula (3), Ar3 represents an arylene group that has 6-24 carbon atoms, 0-2 hydroxy groups, and 2-4 allyl groups per molecule, X3 represents a direct bond, a divalent hydrocarbon group having 1-6 carbon atoms, O, S, or SO2, and r represents an integer of 0-2.)
C08G 59/40 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the curing agents used
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
A compound semiconductor substrate provided with a silicon carbide (SiC) layer, an aluminum nitride (AlN) buffer layer formed on the SiC layer, an aluminum (Al) nitride semiconductor layer formed on the AlN buffer layer, a composite layer formed on the Al nitride semiconductor layer, a gallium nitride (GaN) layer formed on the composite layer as an electron transit layer, and an Al nitride semiconductor layer formed on the GaN layer as a barrier layer. The composite layer includes a plurality of C-GaN layers that are stacked in the vertical direction, and an AlN layer formed between the plurality of C-GaN layers.
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
A compound semiconductor substrate having a desired quality is provided.
A compound semiconductor substrate has an SiC (silicon carbide) layer, an AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a first GaN (gallium nitride) layer formed on the Al nitride semiconductor layer, a first AlN intermediate layer formed on the first GaN layer in contact with the first GaN layer, and a second GaN layer formed on the first AlN intermediate layer in contact with the first AlN intermediate layer.
H01L 31/0328 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups
H01L 31/0336 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
A compound semiconductor substrate manufacturing method provided with: a step of forming a silicon carbide (SiC) layer on a silicon (Si) substrate; a step of forming, on the SiC layer, a low temperature (LT)-aluminum nitride (AlN) layer having a thickness of not less than 12 nm and not more than 100 nm at not less than 700°C and not more than 1000°C; a step of forming, on the LT-AlN layer, a high temperature (HT)-AlN layer at a temperature higher than the temperature for forming the LT-AlN layer; a step of forming, on the HT-AlN layer, an aluminum (Al) nitride semiconductor layer; a step of forming, on the Al nitride semiconductor layer, a gallium nitride (GaN) layer; and a step of forming, on the GaN layer, an Al nitride semiconductor layer.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
Provided is a pellicle production method which allows for the simplification of production steps. The pellicle production method comprises: a step for forming an SiC film (11) on a lower surface (21a) of an Si substrate (21); a step for bonding a support body (12), which includes a through hole, to a lower surface (11a) of the SiC film; and a step for removing the Si substrate after the step for bonding the support body.
A composite semiconductor substrate being able to improve voltage withstanding and crystalline quality is provided. A composite semiconductor substrate is equipped with an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, a composite layer formed on the surface of the AlN layer, and a GaN (gallium nitride) layer formed on the surface of the composite layer. The composite layer includes an AlN (aluminum nitride) layer and a GaN layer formed on the surface of the AlN layer. In at least one composite layer, the average density of C and Fe in the GaN layer is higher than the average density of C and Fe in the AlN layer.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
H01L 29/267 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , in different semiconductor regions
Thermal expandability adjuster, use as thermal expandability adjuster, thermoset resin composition, insulating material, sealing material and conductive paste each containing thermoset resin composition, cured products, prepreg and member obtained by curing thermoset resin composition of prepreg, method of adjusting thermal expansion rate, and member manufactured using method of adjusting
A thermal expandability adjuster is provided which contains a glycoluril derivative compound represented by formula (1) below. The thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product of a thermoset resin composition used for an insulating resin layer or the like and is effective for suppressing deformation of a circuit substrate due to heating. Compounding the above thermal expandability adjuster can reduce the linear thermal expansion coefficient of a cured product obtained by curing a thermoset resin composition and it is therefore possible to provide a member that exhibits small deformation due to heat.
C08G 59/32 - Epoxy compounds containing three or more epoxy groups
C08G 59/40 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the curing agents used
There is provided a method for producing, at a high yield, a composition containing 3-chloro-4-methoxybenzylamine hydrochloride (CMBA-HCl) in which the purity of CMBA-HCl is high. This method comprises a chlorination step involving a chlorination reaction that generates CMBA-HCl from 4-methoxybenzylamine hydrochloride using hydrogen peroxide and hydrochloric acid. There is also provided a CMBA-HCl-containing composition which is produced by the aforementioned production method and in which the purity of CMBA-HCl is high.
C07C 213/08 - Preparation of compounds containing amino and hydroxy, amino and etherified hydroxy or amino and esterified hydroxy groups bound to the same carbon skeleton by reactions not involving the formation of amino groups, hydroxy groups or etherified or esterified hydroxy groups
C07C 217/58 - Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups bound to carbon atoms of at least one six-membered aromatic ring and amino groups bound to acyclic carbon atoms or to carbon atoms of rings other than six-membered aromatic rings of the same carbon skeleton with amino groups linked to the six-membered aromatic ring, or to the condensed ring system containing that ring, by carbon chains not further substituted by singly-bound oxygen atoms with amino groups and the six-membered aromatic ring, or the condensed ring system containing that ring, bound to the same carbon atom of the carbon chain
C07C 213/10 - SeparationPurificationStabilisationUse of additives
This method for producing a substrate with less warpage comprises: a step for forming an SiC film 121 on the surface of an Si substrate 11; a step for removing a bottom face RG2 which constitutes at least a portion of the Si substrate 11 that comes into contact with the SiC film 121; and a step for forming another SiC film on the surface of the SiC film 121 following the step for removing the bottom face RG2.
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
01 - Chemical and biological materials for industrial, scientific and agricultural use
03 - Cosmetics and toiletries; cleaning, bleaching, polishing and abrasive preparations
05 - Pharmaceutical, veterinary and sanitary products
06 - Common metals and ores; objects made of metal
07 - Machines and machine tools
10 - Medical apparatus and instruments
11 - Environmental control apparatus
19 - Non-metallic building materials
30 - Basic staples, tea, coffee, baked goods and confectionery
32 - Beers; non-alcoholic beverages
37 - Construction and mining; installation and repair services
39 - Transport, packaging, storage and travel services
Goods & Services
Chemicals; adsorbents; plant growth regulating preparations;
soil conditioning preparations; ferrous sulfate preparations
to prevent chlorosis in plants; sulfur [non-metallic
mineral]; graphite for industrial purposes; unprocessed
plastics [plastics in primary form]; artificial sweeteners
[chemical preparations]; glue and adhesives for industrial
purposes; fertilizers; gases for industrial purposes. Soaps and detergents; perfume and extracts of perfumes;
cosmetics; deodorants for human beings; dentifrices;
antistatic preparations for household purposes; degreasers
other than for use in manufacturing processes; rust removing
preparations; stain removing benzine; fabric softeners for
laundry use; laundry bleach. Pharmaceutical, veterinary and sanitary preparations;
antibacterial sprays; antibacterial substances for medical
purposes; dental materials; semen for artificial
insemination. Iron and steel; nonferrous metals and their alloys; metal
materials for building or construction; metal joinery
fittings; metal hardware; reservoirs of metal; storage tanks
of metal; metal pulleys, springs and valves [not including
machine elements]; metal junctions for pipes; metal flanges;
prefabricated building assembly kits of metal. Metalworking machines and tools; casting machines; chemical
processing machines and apparatus; cleaning apparatus [for
chemical processing]; food or beverage processing machines
and apparatus; construction machines and apparatus;
loading-unloading machines and apparatus; lumbering,
woodworking, or veneer or plywood making machines and
apparatus; packaging or wrapping machines and apparatus;
plastic processing machines and apparatus; rubber
manufacturing machines; non-electric prime movers, not for
land vehicles, and their parts; parts of non-electric prime
movers for land vehicles; pneumatic or hydraulic machines
and instruments; agricultural machines, agricultural
implements other than hand-operated; machine elements [not
for land vehicles]; printing or bookbinding machines and
apparatus; semiconductor manufacturing machines and systems;
gas separation apparatus; air separation apparatus; pressure
swing adsorption units, namely vacuum pressure swing
adsorption units, pressure swing adsorption units for the
production of nitrogen, pressure swing adsorption units for
the production of oxygen. Medical apparatus and instruments; veterinary apparatus and
instruments; dental apparatus and instruments. Electric lamps and other lighting apparatus; industrial
furnaces; electric furnaces [for industrial purposes]; gas
generating furnaces [for industrial purposes]; freezing
machines and apparatus; drying apparatus [for chemical
processing]; recuperators [for chemical processing];
steamers [for chemical processing]; evaporators;
distillation apparatus; heat exchangers [for chemical
processing]; gas liquefiers, namely nitrogen liquefiers,
oxygen liquefiers, argon liquefiers, carbon dioxide
liquefiers; gas condensers, other than parts of machines;
oxygen generators; nitrogen generators; argon generators;
dry air generators; carbon monoxide generators; carbon
dioxide generators; hydrogen generators. Non-metallic minerals for building or construction; ceramic
building materials, bricks and refractory products; building
materials made of linoleum for fixing to existing walls or
floors; plastic building materials; building materials of
synthetics; rubber building or construction materials;
plaster [for building purposes]; lime building or
construction materials; building or construction materials
of plaster; cement and its products; building timber;
building stone; building glass; joinery fittings [not of
metal]; nonmetallic mineral materials [unworked or partly
worked]; tar and pitch; reservoirs [not of metal or
plastics]; buildings, not of metal. Coffee and cocoa; unroasted coffee; tea; seasonings [other
than spices]; spices; aromatic preparations for food; rice;
cereal preparations; bread, pastries and confectionery;
edible ices; ice cream; sherbets [sorbets]; cakes; instant
confectionery mixes; ice cream mixes; sherbet mixes; almond
paste; yeast powder; baking-powder; ice; binding agents for
ice cream [edible ices]. Beer; carbonated drinks [refreshing beverages]; fruit
juices; vegetable juices [beverages]; whey beverages. Machinery installation; repair or maintenance of vessels;
repair or maintenance of medical apparatus and instruments;
repair or maintenance of chemical processing machines and
apparatus; repair or maintenance of metalworking machines
and tools; repair or maintenance of industrial furnaces;
repair or maintenance of rubber-goods manufacturing machines
and apparatus; repair or maintenance of machines and
apparatus for processing foods or beverages; repair or
maintenance of storage tanks; repair or maintenance of
plastic processing machines and apparatus; repair or
maintenance of packaging or wrapping machines and apparatus;
cleaning of storage tanks; general building construction
works; repair or maintenance of cultivating machines and
implements; repair or maintenance of harvesting machines and
implements; repair or maintenance of pumps. Railway transport; car transport; marine transport; air
transport; gas supplying [distribution]; packaging of goods;
cargo unloading; freight brokerage; warehousing services;
electricity distribution; water supplying [distribution];
heat supplying [distribution]; providing vessel mooring
facilities; rental of warehouse space; car parking; rental
of containers; rental of pallets; car rental.
01 - Chemical and biological materials for industrial, scientific and agricultural use
03 - Cosmetics and toiletries; cleaning, bleaching, polishing and abrasive preparations
05 - Pharmaceutical, veterinary and sanitary products
06 - Common metals and ores; objects made of metal
07 - Machines and machine tools
10 - Medical apparatus and instruments
11 - Environmental control apparatus
19 - Non-metallic building materials
30 - Basic staples, tea, coffee, baked goods and confectionery
32 - Beers; non-alcoholic beverages
37 - Construction and mining; installation and repair services
39 - Transport, packaging, storage and travel services
Goods & Services
Chemicals; adsorbents; plant growth regulating preparations;
soil conditioning preparations; ferrous sulfate preparations
to prevent chlorosis in plants; sulfur [non-metallic
mineral]; graphite for industrial purposes; unprocessed
plastics [plastics in primary form]; artificial sweeteners
[chemical preparations]; glue and adhesives for industrial
purposes; fertilizers; gases for industrial purposes. Soaps and detergents; perfume and extracts of perfumes;
cosmetics; deodorants for human beings; dentifrices;
antistatic preparations for household purposes; degreasers
other than for use in manufacturing processes; rust removing
preparations; stain removing benzine; fabric softeners for
laundry use; laundry bleach. Pharmaceutical, veterinary and sanitary preparations;
antibacterial sprays; antibacterial substances for medical
purposes; dental materials; semen for artificial
insemination. Iron and steel; nonferrous metals and their alloys; metal
materials for building or construction; metal joinery
fittings; metal hardware; reservoirs of metal; storage tanks
of metal; metal pulleys, springs and valves [not including
machine elements]; metal junctions for pipes; metal flanges;
prefabricated building assembly kits of metal. Metalworking machines and tools; casting machines; chemical
processing machines and apparatus; cleaning apparatus [for
chemical processing]; food or beverage processing machines
and apparatus; construction machines and apparatus;
loading-unloading machines and apparatus; lumbering,
woodworking, or veneer or plywood making machines and
apparatus; packaging or wrapping machines and apparatus;
plastic processing machines and apparatus; rubber
manufacturing machines; non-electric prime movers, not for
land vehicles, and their parts; parts of non-electric prime
movers for land vehicles; pneumatic or hydraulic machines
and instruments; agricultural machines, agricultural
implements other than hand-operated; machine elements [not
for land vehicles]; printing or bookbinding machines and
apparatus; semiconductor manufacturing machines and systems;
gas separation apparatus; air separation apparatus; pressure
swing adsorption units, namely vacuum pressure swing
adsorption units, pressure swing adsorption units for the
production of nitrogen, pressure swing adsorption units for
the production of oxygen. Medical apparatus and instruments; veterinary apparatus and
instruments; dental apparatus and instruments. Electric lamps and other lighting apparatus; industrial
furnaces; electric furnaces [for industrial purposes]; gas
generating furnaces [for industrial purposes]; freezing
machines and apparatus; drying apparatus [for chemical
processing]; recuperators [for chemical processing];
steamers [for chemical processing]; evaporators;
distillation apparatus; heat exchangers [for chemical
processing]; gas liquefiers, namely nitrogen liquefiers,
oxygen liquefiers, argon liquefiers, carbon dioxide
liquefiers; gas condensers, other than parts of machines;
oxygen generators; nitrogen generators; argon generators;
dry air generators; carbon monoxide generators; carbon
dioxide generators; hydrogen generators. Non-metallic minerals for building or construction; ceramic
building materials, bricks and refractory products; building
materials made of linoleum for fixing to existing walls or
floors; plastic building materials; building materials of
synthetics; rubber building or construction materials;
plaster [for building purposes]; lime building or
construction materials; building or construction materials
of plaster; cement and its products; building timber;
building stone; building glass; joinery fittings [not of
metal]; nonmetallic mineral materials [unworked or partly
worked]; tar and pitch; reservoirs [not of metal or
plastics]; buildings, not of metal. Coffee and cocoa; unroasted coffee; tea; seasonings [other
than spices]; spices; aromatic preparations for food; rice;
cereal preparations; bread, pastries and confectionery;
edible ices; ice cream; sherbets [sorbets]; cakes; instant
confectionery mixes; ice cream mixes; sherbet mixes; almond
paste; yeast powder; baking-powder; ice; binding agents for
ice cream [edible ices]. Beer; carbonated drinks [refreshing beverages]; fruit
juices; vegetable juices [beverages]; whey beverages. Machinery installation; repair or maintenance of vessels;
repair or maintenance of medical apparatus and instruments;
repair or maintenance of chemical processing machines and
apparatus; repair or maintenance of metalworking machines
and tools; repair or maintenance of industrial furnaces;
repair or maintenance of rubber-goods manufacturing machines
and apparatus; repair or maintenance of machines and
apparatus for processing foods or beverages; repair or
maintenance of storage tanks; repair or maintenance of
plastic processing machines and apparatus; repair or
maintenance of packaging or wrapping machines and apparatus;
cleaning of storage tanks; general building construction
works; repair or maintenance of cultivating machines and
implements; repair or maintenance of harvesting machines and
implements; repair or maintenance of pumps. Railway transport; car transport; marine transport; air
transport; gas supplying [distribution]; packaging of goods;
cargo unloading; freight brokerage; warehousing services;
electricity distribution; water supplying [distribution];
heat supplying [distribution]; providing vessel mooring
facilities; rental of warehouse space; car parking; rental
of containers; rental of pallets; car rental.
68.
COMPOUND SEMICONDUCTOR SUBSTRATE, PELLICLE FILM, AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SUBSTRATE
Provided are a compound semiconductor substrate, a pellicle film, and a method for manufacturing a compound semiconductor substrate with which it is possible to reduce the film thickness of an SiC film. This method for manufacturing a compound semiconductor substrate is provided with a step for forming an SiC film on the upper surface of an Si substrate, and a step for exposing at least part of the lower surface of the SiC film by wet etching. In the step for exposing at least part of the lower surface of the SiC film, at least the Si substrate and the SiC film are caused to move relative to a chemical solution used in the wet etching.
A semiconductor device which can reduce power consumption and a method for manufacturing the same are provided. A semiconductor device comprises an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, an n-type GaN (gallium nitride) layer formed on the surface of the AlN layer, a first electrode formed at the surface side of the GaN layer, and a second electrode formed at the reverse face side of the Si substrate 1. The magnitude of electrical current which flows between the first electrode and the second electrode depends on electrical voltage between the first electrode and the second electrode.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 29/267 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , in different semiconductor regions
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/207 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
70.
Vinylbenzylated phenol compound, method of manufacturing vinylbenzylated phenol compound, activated ester resin, method of manufacturing activated ester resin, thermoset resin composition, hardened material of thermoset resin composition, interlayer insulating material, prepreg, and method of manufacturing prepreg
A vinylbenzylated phenol compound represented by General Formula (1) below is provided.
5 may be the same or different and are each hydrogen or a methyl group, and p is an integer of 1 to 4.)
B32B 27/26 - Layered products essentially comprising synthetic resin characterised by the use of special additives using curing agents
C08J 5/24 - Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
C08L 63/00 - Compositions of epoxy resinsCompositions of derivatives of epoxy resins
C08L 67/03 - Polyesters derived from dicarboxylic acids and dihydroxy compounds the dicarboxylic acids and dihydroxy compounds having the hydroxy and the carboxyl groups directly linked to aromatic rings
C08L 67/07 - Unsaturated polyesters having terminal carbon-to-carbon unsaturated bonds
C07C 37/11 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms
C07C 39/00 - Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
C07C 39/205 - Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic, containing only six-membered aromatic rings as cyclic part, with unsaturation outside the rings
C07C 39/225 - Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic, containing only six-membered aromatic rings as cyclic part, with unsaturation outside the rings with at least one hydroxy group on a condensed ring system
C07C 39/21 - Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic, containing only six-membered aromatic rings as cyclic part, with unsaturation outside the rings with at least one hydroxy group on a non-condensed ring
C07C 67/14 - Preparation of carboxylic acid esters from carboxylic acid halides
C07C 37/18 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms by condensation involving halogen atoms of halogenated compounds
C08G 59/42 - Polycarboxylic acidsAnhydrides, halides, or low-molecular-weight esters thereof
71.
COMPOUND SEMICONDUCTOR SUBSTRATE PROVIDED WITH SIC LAYER
Provided is a compound semiconductor substrate having a desired quality. The present invention has a SiC (silicon carbide) layer, an AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a first GaN (gallium nitride) layer formed on the Al nitride semiconductor layer, a first AlN intermediate layer which is formed on the first GaN layer and is in contact with the first GaN layer, and a second GaN layer which is formed on the first AlN intermediate layer and is in contact with the first AlN intermediate layer.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
05 - Pharmaceutical, veterinary and sanitary products
10 - Medical apparatus and instruments
30 - Basic staples, tea, coffee, baked goods and confectionery
Goods & Services
Pharmaceutical preparations, namely, antifungals, other than for human beings or for animals; dental porcelain materials; dental impression materials; dental composite materials; oiled paper for medical purposes; drug delivery agents in the form of edible wafers for wrapping powdered pharmaceuticals; gauze for dressings; capsules sold empty for pharmaceuticals; eyepatches for medical purposes; ear bandages; disposable diapers for incontinence; semen for artificial insemination; menstruation bandages; menstruation tampons; menstruation pads; menstruation knickers; antiseptic cotton; absorbent cotton for medical purposes; lacteal flour for babies; lactose for medical purposes; fly catching paper; adhesive plasters for medical purposes; bandages for dressings; antiseptic liquid bandages; mothproofing paper; breast-nursing pads; cotton swabs for medical use Medical apparatus and instruments, namely, catheters, syringes for medical purposes and for injections; dental apparatus in the nature of dental casting machines and pressure casters for creating dental prosthetics; ice bags in the form of pillows for medical purposes; triangular bandages, namely, slings for medical use; supportive bandages; surgical catguts; feeding cups for medical purposes; dropping pipettes for medical purposes; teats; ice bags for medical purposes; medical apparatus, namely, dispensers for plastic ice bags; nursing appliances, namely, breast pumps; nursing bottles; finger guards for medical purposes; intra-uterine contraceptive devices; artificial tympanic membranes; prosthetic and filling materials, namely, artificial materials for use in the replacement of bones; ear plugs for medical purposes; gloves for medical purposes; electric massage apparatus for household use; urinals for medical purposes; bed pans; ear picks; bracelets for medical purposes; sanitary masks for medical purposes Seasonings; spices; aromatic preparations for food, namely, food flavorings, namely, food flavorings being non-essential oils, food flavorings in the nature of infused oils not being essential oils, Food flavorings, other than essential oils, food flavorings other than essential oils for use in making candy, chocolate-based and buttercream-based fillings for use in making candy; rice; husked oats; husked barley; flour; gluten additives for culinary purposes; processed cereals; Chinese stuffed dumplings (gyoza, cooked); sandwiches; Chinese steamed dumplings (shumai, cooked); Sushi; fried balls of batter mixed with small pieces of octopus, namely, takoyaki; steamed buns stuffed with minced meat (niku-manjuh); hamburger sandwiches; pizzas; pre-packaged lunches consisting primarily of rice, and also including meat, fish or vegetables; hot dog sandwiches; meat pies; ravioli; sweets; breads; instant confectionery mixes, namely, instant pudding mixes, instant jelly mixes, instant hotcake mixes, instant doughnut mixes, and instant mixes of sweet adzuki-bean jelly; ice cream mixes; sherbet mixes; yeast powder; fermenting malted rice (Koji); yeast; baking powder; starch-based binding agents for ice cream; meat tenderizers for household purposes; by-product of rice for food (Sake lees); starch-based thickeners for whipped cream
05 - Pharmaceutical, veterinary and sanitary products
10 - Medical apparatus and instruments
Goods & Services
Pharmaceutical preparations, namely, antifungals, other than for human beings or for animals; dental porcelain materials; dental impression materials; dental composite materials; oiled paper for medical purposes; drug delivery agents in the form of edible wafers for wrapping powdered pharmaceuticals; gauze for dressings; capsules sold empty for pharmaceuticals; eyepatches for medical purposes; ear bandages; disposable diapers for incontinence; semen for artificial insemination; menstruation bandages; menstruation tampons; menstruation pads; menstruation knickers; antiseptic cotton; absorbent cotton for medical purposes; lacteal flour for babies; lactose for medical purposes; fly catching paper; adhesive plasters for medical purposes; bandages for dressings; antiseptic liquid bandages; mothproofing paper; breast-nursing pads; cotton swabs for medical use Medical apparatus and instruments, namely, catheters, syringes for medical purposes and for injections; dental apparatus in the nature of dental casting machines and pressure casters for creating dental prosthetics; ice bags in the form of pillows for medical purposes; triangular bandages, namely, slings for medical use; supportive bandages; surgical catguts; feeding cups for medical purposes; dropping pipettes for medical purposes; teats; ice bags for medical purposes; medical apparatus, namely, dispensers for plastic ice bags; nursing appliances, namely, breast pumps; nursing bottles; finger guards for medical purposes; intra-uterine contraceptive devices; artificial tympanic membranes; prosthetic and filling materials, namely, artificial materials for use in the replacement of bones; ear plugs for medical purposes; gloves for medical purposes; electric massage apparatus for household use; urinals for medical purposes; bed pans; ear picks; bracelets for medical purposes; sanitary masks for medical purposes
The present invention provides a synthesis gas production method for generating a synthesis gas having an H2/CO molar ratio of approximately 1-2, using a biogas as a raw material without a pretreatment for removing CO2. In production of the synthesis gas containing carbon monoxide and hydrogen as main components by allowing a reforming reaction of a hydrocarbon-type gas, an oxygen-type gas, and steam to take place, a biogas is used as the hydrocarbon-type gas, and carbon dioxide is not separated out when the biogas undergoes the reforming reaction. The synthesis gas containing carbon monoxide and hydrogen as main components is generated using the biogas as a raw material without a pretreatment thereof. A desired synthesis gas can be obtained without spending costs or consuming power for a CO2 removal step such as PSA.
C01B 3/38 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts
B01J 23/89 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with noble metals
C01B 3/40 - Production of hydrogen or of gaseous mixtures containing hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts characterised by the catalyst
Provided is a compound semiconductor substrate which has improved withstand voltage and crystal quality. This compound semiconductor substrate is provided with: an Si (silicon) substrate; an SiC (silicon carbide) layer that is formed on the surface of the Si substrate; an AlN (aluminum nitride) layer that is formed on the surface of the SiC layer; a composite layer that is formed on the surface of the AlN layer; and a GaN (gallium nitride) layer that is formed on the surface of the composite layer. The composite layer comprises an AlN (aluminum nitride) layer and a GaN layer that is formed on the surface of the AlN layer. In at least one composite layer, the average concentration of C and Fe in the GaN layer is higher than the average concentration of C and Fe in the AlN layer.
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
76.
THERMAL-EXPANSION ADJUSTING AGENT, USAGE AS THERMAL-EXPANSION ADJUSTING AGENT, THERMOSETTING RESIN COMPOSITION, INSULATING MATERIAL, SEALANT, AND CONDUCTIVE PASTE CONTAINING SAID THERMOSETTING RESIN COMPOSITION, HARDENED MATERIAL OBTAINED BY HARDENING SAID THERMOSETTING RESIN COMPOSITION, SUBSTRATE MATERIAL HAVING SAID THERMOSETTING RESIN COMPOSITION, PREPREG IN WHICH BASE MATERIAL THEREOF IS IMPREGNATED WITH SAID THERMOSETTING RESIN COMPOSITION, MEMBER IN WHICH SAID THERMOSETTING RESIN COMPOSITION OF SAID PREPREG IS HARDENED, THERMAL-EXPANSION-RATE ADJUSTING METHOD, AND MEMBER MANUFACTURED BY USING SAID ADJUSTING METHOD
A thermal-expansion adjusting agent containing a glycoluril derivative compound of formula (1) is provided so as to serve as a thermal-expansion adjusting agent with which it is possible to reduce the linear thermal expansion coefficient of a hardened material of a thermosetting resin composition employed in an insulation resin layer or the like, and which is effective for suppressing deformation of a circuit substrate due to heating; and, because it is possible to reduce the linear thermal expansion coefficient of the hardened material, which is obtained by hardening the thermosetting resin composition, by combining the thermal-expansion adjusting agent, it is possible to provide a member that exhibits low deformation due to heat.
Provided are a semiconductor device capable of reducing power consumption and a production method therefor. The semiconductor device comprises: an Si (silicon) substrate; an SiC (silicon carbide) layer formed on the surface of the Si substrate; an AlN (aluminum nitride) layer formed on the surface of the SiC layer; and an n-type GaN (gallium nitride) layer formed on the surface of the AlN layer; a first electrode formed on the surface side of the GaN layer; and a second electrode formed on the rear surface side of the Si substrate 1. The size of a current flowing between the first electrode and the second electrode depends on the voltage between the first electrode and the second electrode.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
The present invention increases pressure resistance in the longitudinal direction of a semiconductor device while ensuring semiconductor device quality. This semiconductor device is equipped with a Si (silicon) substrate, a SiO2 (silicon oxide) layer formed on a surface of the Si substrate, a Si layer formed on a surface of the SiO2 layer, and a SiC (silicon carbide) layer formed atop a surface of the Si layer. The thickness of the SiO2 layer is not less than 1 µm and does not exceed 20 µm.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
Provided is an industrial method for producing isoquinolines by ozone-oxidizing a reaction solution comprising indenes, ammonia water comprising 1 or more equivalents of ammonia of the indenes, and an organic solvent capable of dissolving indene to obtain isoquinolines. The organic solvent capable of dissolving the indene has compatibility with water.
C07D 217/02 - Heterocyclic compounds containing isoquinoline or hydrogenated isoquinoline ring systems with only hydrogen atoms or radicals containing only carbon and hydrogen atoms, directly attached to carbon atoms of the nitrogen-containing ringAlkylene-bis-isoquinolines
80.
HYDROGEN GAS PURIFICATION METHOD AND PURIFICATION DEVICE FOR SAME
Provided are: a hydrogen gas purification method by which impurities can be removed from hydrogen gas extracted using organic chemical hydrides or the like, and which can purify the hydrogen gas with a high recovery rate; and a purification device for said method. A hydrogen gas purification method in which two adsorption columns 10A, 10B filled with an adsorbent are used to purify raw hydrogen gas containing impurities, said method comprising an adsorption cycle including at least an adsorption step, in which the impurities are absorbed by the adsorbent in the adsorption columns 10A, 10B, thereby separating the impurities from the raw hydrogen gas, and a thermal regeneration step, in which a heated purge gas is provided to the adsorption columns after the adsorption step, thereby stripping the impurities from the adsorbent, said cycle being carried out repeatedly in each of the adsorption columns 10A, 10B. While the adsorption step is being carried out in one adsorption column, a step other than the adsorption step is being carried out in the other adsorption column. In the thermal regeneration step, the purge gas is circulated while being heated.
C01B 3/56 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with solidsRegeneration of used solids
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
81.
COMPOSITION CONTAINING 3-CHLORO-4-METHOXYBENZYLAMINE HYDROCHLORIDE, AND METHOD FOR PRODUCING SAME
Provided is a method for producing a composition containing 3-chloro-4-methoxybenzylamine hydrochloride (CMBA-HCl) with high yield, wherein the purity of CMBA-HCl is high. The method comprises a chlorination step involving a chlorination reaction for producing CMBA-HCl from 4-methoxybenzylamine hydrochloride using hydrogen peroxide and hydrochloric acid. Also provided is a CMBA-HCl-containing composition, which is produced by the aforementioned production method and in which the purity of CMBA-HCl is high.
C07C 213/08 - Preparation of compounds containing amino and hydroxy, amino and etherified hydroxy or amino and esterified hydroxy groups bound to the same carbon skeleton by reactions not involving the formation of amino groups, hydroxy groups or etherified or esterified hydroxy groups
C07C 213/10 - SeparationPurificationStabilisationUse of additives
C07C 217/58 - Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups bound to carbon atoms of at least one six-membered aromatic ring and amino groups bound to acyclic carbon atoms or to carbon atoms of rings other than six-membered aromatic rings of the same carbon skeleton with amino groups linked to the six-membered aromatic ring, or to the condensed ring system containing that ring, by carbon chains not further substituted by singly-bound oxygen atoms with amino groups and the six-membered aromatic ring, or the condensed ring system containing that ring, bound to the same carbon atom of the carbon chain
82.
Root canal filling material containing mesenchymal stem cells and method for regenerating dental tissue using the same
A root canal filling material for a tooth extraction or tooth non-extraction process can be used clinically because of its easy availability and can efficiently enhance dental tissue regeneration; a method for regenerating dental tissue using the filling material is also provided. A root canal filling material 200 including mesenchymal stem cells 220 excluding dental pulp stem cells, which are inserted into the apical side of a root canal subjected to pulp extirpation or to root canal enlargement and cleaning of an infected root canal and including an extracellular matrix 210 is provided, and a method for regenerating dental tissue, through a tooth extracting or tooth non-extracting process, including a step of injecting the root canal filling material into the apical side of a root canal of a non-extracted tooth subjected to pulp extirpation or to root canal enlargement and cleaning of an infected root canal is provided.
A01N 63/00 - Biocides, pest repellants or attractants, or plant growth regulators containing microorganisms, viruses, microbial fungi, animals or substances produced by, or obtained from, microorganisms, viruses, microbial fungi or animals, e.g. enzymes or fermentates
A61C 5/04 - Implements for filling natural teeth; Methods or instruments for medication of tooth nerve channels
01 - Chemical and biological materials for industrial, scientific and agricultural use
06 - Common metals and ores; objects made of metal
07 - Machines and machine tools
11 - Environmental control apparatus
19 - Non-metallic building materials
37 - Construction and mining; installation and repair services
39 - Transport, packaging, storage and travel services
42 - Scientific, technological and industrial services, research and design
Goods & Services
Chemicals for use in industry and science; plant growth regulating preparations; plastic adhesives not for stationery or household purposes; higher fatty acids for use in industrial purpose; higher fatty acids for use in manufacturing purpose; higher fatty acids for use in chemical purpose; unprocessed plastics being plastics in primary form; paper pulp; flour and starch for industrial purposes; fertilizers; chemical compositions for developing and enlarging photographs; reagent paper not for medical purposes; artificial sweeteners; ceramic glazings in the nature of a dry chemical preparation for use in the manufacture of ceramics Iron and steel; nonferrous metals and their alloys; ores of metal; metal materials for building or construction, namely, metal decks, metal floor boards, metal pergolas, metal louvers, metal guard fence, metal fences, metal guardrail and metal joists; metal joinery fittings; metal hardware, namely, nuts, bolts, brackets; prefabricated building assembly kits of metal; reservoirs of metal; metal pulleys, springs and valves; industrial packaging containers of metal; loading and unloading pallets of metal; turn-tables for load handling made of metal; traversers for load handling made of metal; artificial fish reefs of metal; metal moulds for forming cement products; transportable greenhouses of metal for household use; paint spraying booths of metal; prefabricated sectional poultry houses of metal; non-luminous beacons of metal; not luminous or mechanical road signs of metal; railway points; metal junctions for pipes; metal flanges; metal cotter pins; anchors; mooring bitts of metal; mooring bollards of metal; anvils; swage blocks; wire nets and gauzes; wire ropes; metal chains for dogs; water tanks of metal for household purposes; tool boxes of metal sold empty; money boxes of metal; metal stepladders and ladders; metal nameplates and door nameplates; towel dispensers of metal; hat-hanging hooks of metal; letter boxes of metal; metal safes; upright signboards of common metal; sculptures of metal; exterior blind of metal; metal tombs and metal tomb plaques; buckles of common metal; ferrules of metal for canes and walking-sticks; crampons being climbing irons; carabiners being metal hardware; diving platforms of metal; spurs; rock pitons of metal Metalworking machines, namely, welding machine; loading and unloading machines; chemical processing machines and apparatus, namely, blending machines for chemical processing, extracting machines, granulating machines, reaction vessels, separating machines, filtering machines, absorbing machines and cleaning machines; printing machines and or bookbinding machines for industrial purposes; packaging machines and wrapping machines; plastic processing machines; semiconductor manufacturing machines; machines for manufacturing rubber goods; stone working machines; non-electric prime movers not for land vehicles, namely, turbines; parts for non-electric prime movers for land vehicles, namely, brake parts, Fuel injector parts for land and water vehicle engines; Gas turbine engines not for land vehicles and replacement parts; Heat exchangers being parts of engines not for land vehicles; Internal combustion land vehicle engine parts, namely, connecting rods; Internal combustion engines land vehicle parts, namely, coils; Internal combustion engines land vehicle parts, namely, distributor caps; Internal combustion engines land vehicle parts, namely, distributor rotors; Land vehicle parts, namely, spark plug wires; Machine coupling and transmission components, except for land vehicles, and parts therefor; Mechanical engine parts for land vehicles; pneumatic or hydraulic machines and instruments, namely, compressing machines, blowing machines, pumps, vacuum pumps and cryogenic pumps; agricultural machines and agricultural implements other than hand-operated, namely, harvesting machines and cultivating machines; shoe making machines; leather tanning machines; tobacco processing machines; adhesive tape dispensing machines; automatic stamping machines; starters for motors and engines; AC motors and DC motors not for land vehicles, and component parts therefor; AC generators being alternators; DC generators; mechanical parking systems; lawnmowers; electric wax-polishing machines for industrial purposes; dynamo brushes; curtain drawing devices electrically operated; power-operated potters' wheels; painting machines; vehicle washing installations; machine elements not for land vehicles, namely, speed change gears being parts of machines, reduction gears being parts of machines, bearings being machine elements not for land vehicles, toothed wheels or gears being machine elements not for land vehicles, shafts, axles or spindles not for land vehicles; machine parts, namely, keys being mechanical elements Electric lamps and other lighting apparatus, namely, electric lights for offices and factories; standing paper lanterns (andon); gas lamps; oil lamps; portable paper lanterns (chochin); lamp chimneys; industrial furnaces; nuclear reactors being atomic piles; forage drying apparatus; milk sterilizers; drying apparatus for chemical processing; recuperators for chemical processing; steamers for chemical processing; evaporators for chemical processing; distillers for chemical processing; heat exchangers for chemical processing; toilet bowls and seats sold as a unit; prefabricated bathrooms sold as a unit; bath fittings in the nature of plumbing fittings, namely, shower unit, unit for bathroom with dressing room, bathtub with shower, bathing equipment and shower type bathing equipment; garbage incinerators; toilet stool units with a washing water squirter; disinfectant dispensers for toilets; toilet bowls; seatings for use with Japanese style toilet bowls; warming pans, non-electric, for beds; non-electric pocket warmers, namely, chemically- activated heating packets for warming hands; stick fuel for Japanese pocket warmers (kairo-bai); heating or cooling packs filled with chemical substances ready to react when required; hot water bottles for warming one's feet in bed Non-metallic minerals for building or construction; plastic building materials, namely, plastic decks, plastic floor boards, plastic pergolas, plastic guard fence, plastic louvers, plastic interior material, plastic fences, plastic brackets and plastic external wall materials; synthetic building materials, namely, synthetic decks, synthetic floor boards, synthetic pergolas, synthetic guard fence, synthetic louvers, synthetic interior material, synthetic fences, synthetic brackets and synthetic external wall materials; asphalt, and asphalt building or construction materials, namely, asphalt decks, asphalt floor boards, asphalt pergolas, asphalt guard fence, asphalt louvers, asphalt interior material and asphalt fences; rubber building or construction materials, namely, rubber decks, rubber floor boards, rubber pergolas, rubber guard fence, rubber louvers, rubber interior material, rubber fences, and rubber brackets; plaster for building purposes; lime building or construction materials; building or construction materials of plaster, namely, plaster boards; rockslide retention nets of textiles being construction materials; prefabricated buildings, not of metal; cement and its products, namely, cement decks, cement floor boards, cement pergolas, cement louvers, cement interior material, cement fences and cement joists; building timber; building stone; building glass; joinery fittings not of metal; tar and pitch; transportable greenhouses not of metal for household use; artificial fish reefs not of metal; moulds, not of metal, for forming cement products being cement posts, cement floor post and cement joists; paint spraying booths not of metal; prefabricated poultry houses, not of metal; road and field marking sheets and strips of plastic and glass granules; erosion control mats integrating plants seeds; plastic security windows allowing communication; road signs and beacons not of metal and non-luminous; water tanks of masonry for industrial purposes; mooring bitts and bollards not of metal; stone sculptures; letter boxes of masonry; concrete sculptures; marble sculptures; non-luminous stone lanterns; diving platforms not of metal; gravestones and tomb plaques not of metal General building construction works; dredging; construction and maintenance services of property relating to civil engineering; road paving; masonry; glass installation services; steel structure construction works; plastering; carpentry; tile laying, bricklaying or block laying; joinery; building reinforcing; painting; scaffolding, earthworks or concrete construction; upholstering; Building construction services, namely, installation of metal sheets; building damp-proofing; roofing services; plumbing; machinery installation; drilling of wells; electrical installation services, namely, power distribution work; telecommunication wiring; thermal insulating for buildings; operation and maintenance of building equipment, namely, operation of crane, operation of equipment in operating room, operation of chemical plants and operation of air separation plant; shipbuilding; repair or maintenance of vessels; aircraft repair or maintenance; repair of bicycles; repair or maintenance of automobiles; repair or maintenance of railway rolling stocks; repair or maintenance of two-wheeled motor vehicles; repair or maintenance of chick brooders; repair or maintenance of egg incubators; repair or maintenance of medical apparatus and instruments; repair or maintenance of printing or bookbinding machines and apparatus; repair or maintenance of movie projectors; repair or maintenance of photographic machines and apparatus; repair or maintenance of elevators being lifts; repair or maintenance of chemical processing machines and apparatus; repair or maintenance of fire alarms; repair or maintenance of gasoline station equipment; repair or maintenance of glassware manufacturing machines and apparatus; repair or maintenance of mechanical parking systems; repair or maintenance of milk filtering machines; repair or maintenance of milking machines; repair or maintenance of fishing machines and instruments; repair or maintenance of metalworking machines and tools; repair or maintenance of shoe making machines; repair or maintenance of plowing machines and implements other than hand-held tools; repair or maintenance of cultivating machines and implements; repair or maintenance of harvesting machines and implements; repair or maintenance of plant fiber processing machines and implements; repair or maintenance of fodder presses; repair or maintenance of fodder cutting machines; repair or maintenance of fodder mixing machines; repair or maintenance of cake-fodder crushing machines; repair or maintenance of industrial furnaces; repair or maintenance of mining machines and apparatus; repair or maintenance of rubbergoods manufacturing machines and apparatus; repair or maintenance of sericultural machines and implements; repair or maintenance of vending machines; repair or maintenance of guns; repair or maintenance of electric lighting apparatus; repair or maintenance of office machines and equipment; repair or maintenance of machines and apparatus for lumbering, woodworking, or veneer or plywood making; repair or maintenance of textile machines and apparatus; repair or maintenance of divers' apparatus; repair or maintenance of measuring and testing machines and instruments; repair or maintenance of tobacco processing machines; repair or maintenance of air-conditioning apparatus for industrial purposes; repair or maintenance of burners; repair or maintenance of boilers; repair or maintenance of pumps; repair or maintenance of reservoirs; repair or maintenance of telecommunication machines and apparatus; repair or maintenance of computers including electric circuits; repair or maintenance of computers; repair or maintenance of power distribution or control machines and apparatus; repair or maintenance of power generators; repair or maintenance of electric motors; repair or maintenance of painting machines and apparatus; repair or maintenance of vehicle washing installations; repair or maintenance of construction machines and apparatus; repair or maintenance of machines and apparatus for pulp-making, papermaking or paperworking; repair or maintenance of semiconductor manufacturing machines and systems; repair or maintenance of apparatus and instruments for use in beauty salons or barbers' shops; repair or maintenance of plastic processing machines and apparatus; repair or maintenance of packaging or wrapping machines and apparatus; repair or maintenance of amusement machines and apparatus; repair or maintenance of laboratory apparatus and instruments; repair of sports equipment; repair of toys or dolls; furniture restoration; umbrella repair; repair or maintenance of gas water heaters; repair or maintenance of musical instruments; repair of bags or pouches; safe maintenance or repair; shoe repair; setup or repair of locks; repair of toilet stool units with a washing water squirts; repair of fishing tackle; clock and watch repair or maintenance; sharpening of scissors and kitchen knives; repair of billiard equipment; repair of game machines and apparatus; repair of personal ornaments; repair of spectacles; repair or maintenance of bath fittings; fur care and repair; laundering; pressing of clothing; repair of tatami mats; clothing repair being mending clothing; fluffing of cotton batting for futon; chimney sweeping; cleaning of building exterior surfaces; window cleaning; carpet and rug cleaning; floor polishing; septic tank cleaning; reservoirs cleaning; street cleaning; bathtub and bath boiler cleaning; disinfecting of telephone hand-sets; vermin exterminating other than for agriculture, horticulture or forestry; rental of car-washing apparatus; rental of construction machines and apparatus; rental of mops Railway transport; car transport; marine transport; air transport; packaging of goods for transport; cargo unloading; freight brokerage; brokerage for rental or chartering of vessels being boats; refloating of ships; ship piloting; travel tour conducting; travel tour conducting or escorting; travel arrangement and reservation services excluding those for lodging; warehousing services; temporary safekeeping of personal belongings; gas supplying being distribution; electricity distribution; water supplying being distribution; heat supplying being distribution; providing vessel mooring facilities; rental of warehouse space; parking garage services; airport services; rental of wheelchairs; rental of bicycles; rental of aircraft; rental of storage containers; rental of pallets; car rental; rental of vessels; rental of packaging or wrapping machines and apparatus Repair of software, namely, the repair of software recorded on magnetic disks and other peripherals
37 - Construction and mining; installation and repair services
39 - Transport, packaging, storage and travel services
42 - Scientific, technological and industrial services, research and design
01 - Chemical and biological materials for industrial, scientific and agricultural use
06 - Common metals and ores; objects made of metal
07 - Machines and machine tools
11 - Environmental control apparatus
Goods & Services
[ General building construction works not including doors and windows; dredging; construction and maintenance services of property relating to civil engineering; road paving; masonry; steel structure construction works; plastering; carpentry; tile laying, bricklaying or block laying; joinery; building reinforcing; painting; scaffolding, earthworks or concrete construction; upholstering; Building construction services, namely, installation of metal sheets; building damp-proofing; roofing services; plumbing; machinery installation; drilling of wells; electrical installation services, namely, installing electric appliances and power distribution work; telecommunication wiring, operation and maintenance of building equipment, namely, operation of crane, operation of equipment in operating room, operation of chemical plants and operation of air separation plant; shipbuilding; repair or maintenance of vessels; aircraft repair or maintenance; repair of bicycles; repair or maintenance of automobiles; repair or maintenance of railway rolling stocks; repair or maintenance of two-wheeled motor vehicles; repair or maintenance of chick brooders; repair or maintenance of egg incubators; repair or maintenance of medical apparatus and instruments; repair or maintenance of printing or bookbinding machines and apparatus; repair or maintenance of movie projectors; repair or maintenance of photographic machines and apparatus; repair or maintenance of elevators being lifts; repair or maintenance of chemical processing machines and apparatus; repair or maintenance of fire alarms; repair or maintenance of gasoline station equipment; repair or maintenance of glassware manufacturing machines and apparatus; repair or maintenance of mechanical parking systems; repair or maintenance of milk filtering machines; repair or maintenance of milking machines; repair or maintenance of industrial dishwashers; repair or maintenance of electric washing machines for industrial purposes; repair or maintenance of fishing machines and instruments; repair or maintenance of metalworking machines and tools; repair or maintenance of shoe making machines; repair or maintenance of plowing machines and implements other than hand-held tools; repair or maintenance of cultivating machines and implements; repair or maintenance of harvesting machines and implements; repair or maintenance of plant fiber processing machines and implements; repair or maintenance of fodder presses; repair or maintenance of fodder cutting machines; repair or maintenance of fodder mixing machines; repair or maintenance of cake-fodder crushing machines; repair or maintenance of industrial furnaces; repair or maintenance of mining machines and apparatus; repair or maintenance of rubber-goods manufacturing machines and apparatus; repair or maintenance of sericultural machines and implements; repair or maintenance of vending machines; repair or maintenance of guns; repair or maintenance of water purifying apparatus; repair or maintenance of electric lighting apparatus; repair or maintenance of machines and apparatus for processing foods or beverages; repair or maintenance of office machines and equipment; repair or maintenance of machines and apparatus for lumbering, woodworking, or veneer or plywood making; repair or maintenance of textile machines and apparatus; repair or maintenance of divers' apparatus; repair or maintenance of measuring and testing machines and instruments; repair or maintenance of tobacco processing machines; repair or maintenance of air-conditioning apparatus for industrial purposes; repair or maintenance of burners; repair or maintenance of boilers; repair or maintenance of pumps; repair or maintenance of freezing machines and apparatus; repair or maintenance of reservoirs; repair or maintenance of telecommunication machines and apparatus; repair or maintenance of computers including electric circuits; repair or maintenance of computers; repair or maintenance of power distribution or control machines and apparatus; repair or maintenance of power generators; repair or maintenance of electric motors; repair or maintenance of painting machines and apparatus; repair or maintenance of vehicle washing installations; repair or maintenance of construction machines and apparatus; repair or maintenance of waste compacting machines and apparatus; repair or maintenance of waste crushing machines; repair or maintenance of machines and apparatus for pulp-making, papermaking or paper-working; repair or maintenance of semiconductor manufacturing machines and systems; repair or maintenance of apparatus and instruments for use in beauty salons or barbers' shops; repair or maintenance of plastic processing machines and apparatus; repair or maintenance of packaging or wrapping machines and apparatus; repair or maintenance of sewing machines; repair or maintenance of consumer electric appliances; repair or maintenance of amusement machines and apparatus; repair or maintenance of laboratory apparatus and instruments; repair of sports equipment; repair of toys or dolls; furniture restoration; umbrella repair; repair or maintenance of gas water heaters; repair or maintenance of non-electric cooking heaters; repair or maintenance of cooking pots and pans; repair or maintenance of musical instruments; repair of bags or pouches; safe maintenance or repair; shoe repair; setup or repair of locks; repair of toilet stool units with a washing water squirts; repair of fishing tackle; clock and watch repair or maintenance; sharpening of scissors and kitchen knives; repair of billiard equipment; repair of game machines and apparatus; repair of personal ornaments; repair of spectacles; repair or maintenance of bath fittings; fur care and repair; laundering; pressing of clothing; repair of tatami mats; clothing repair being mending clothing; fluffing of cotton batting for futon; chimney sweeping; cleaning of building exterior surfaces; window cleaning; carpet and rug cleaning; floor polishing; septic tank cleaning; reservoirs cleaning; street cleaning; bathtub and bath boiler cleaning; disinfecting of telephone hand-sets; vermin exterminating other than for agriculture, horticulture or forestry; rental of car-washing apparatus; rental of electric washing machines; rental of construction machines and apparatus; rental of floor cleaning machines; rental of mops ] [ railway transport; car transport; marine transport; air transport; packaging of goods for transport; cargo unloading; freight brokerage; brokerage for rental or chartering of vessels being boats; refloating of ships; ship piloting; travel tour conducting; travel tour conducting or escorting; travel arrangement and reservation services excluding those for lodging; warehousing services; temporary safekeeping of personal belongings; gas supplying being distribution; electricity distribution; water supplying being distribution; heat supplying being distribution; providing vessel mooring facilities; rental of warehouse space; parking garage services; airport services; rental of wheelchairs; rental of bicycles; rental of aircraft; rental of storage containers; rental of pallets; car rental; rental of vessels; rental of packaging or wrapping machines and apparatus ] [ repair of software, namely, the repair of magnetic disks and other peripherals recorded with programs for CPU and computers ] chemicals for use in industry and science; [ plant growth regulating preparations; plastic adhesives not for stationery or household purposes; higher fatty acids for use in industrial purpose; higher fatty acids for use in manufacturing purpose; higher fatty acids for use in chemical purpose; unprocessed plastics being plastics in primary form; paper pulp; flour and starch for industrial purposes; fertilizers; chemical compositions for developing and enlarging photographs; reagent paper not for medical purposes; artificial sweeteners; ceramic glazings in the nature of a dry chemical preparation for use in the manufacture of ceramics ] [ Reservoirs of metal ] [ metalworking machines, namely, welding machine; loading and unloading machines; chemical processing machines and apparatus, namely, blending machines for chemical processing, extracting machines, granulating machines, reaction vessels, separating machines, filtering machines, absorbing machines and cleaning machines; food or beverage processing machines and apparatus, namely, electric food processors and electric drink processors; printing machines and or bookbinding machines for industrial purposes; packaging machines and wrapping machines; plastic processing machines; semiconductor manufacturing machines; machines for manufacturing rubber goods; stone working machines; non-electric prime movers not for land vehicles, namely, turbines; parts for non-electric prime movers for land vehicles, namely, brake parts, Fuel injector parts for land and water vehicle engines; Gas turbine engines not for land vehicles and replacement parts; Heat exchangers being parts of engines not for land vehicles; Internal combustion land vehicle engine parts, namely, connecting rods; Internal combustion engines land vehicle parts, namely, coils; Internal combustion engines land vehicle parts, namely, distributor caps; Internal combustion engines land vehicle parts, namely, distributor rotors; Land vehicle parts, namely, spark plug wires; Machine coupling and transmission components, except for land vehicles, and parts therefor; Mechanical engine parts for land vehicles; pneumatic or hydraulic machines and instruments, namely, compressing machines, blowing machines, pumps, vacuum pumps and cryogenic pumps; agricultural machines and agricultural implements other than hand-operated, namely, harvesting machines and cultivating machines; sewing machines; shoe making machines; leather tanning machines; tobacco processing machines; adhesive tape dispensing machines; automatic stamping machines; starters for motors and engines; AC motors and DC motors not for land vehicles, and component parts therefore; AC generators being alternators; DC generators; mechanical parking systems; lawnmowers; dishwashers; electric wax-polishing machines for industrial purposes; laundry washing machines; vacuum cleaners; dynamo brushes; electric food blenders for household purposes; curtain drawing devices electrically operated; power-operated potters' wheels; painting machines; vehicle washing installations; waste compacting machines; waste crushing machines; machine elements not for land vehicles, namely, speed change gears being parts of machines, reduction gears being parts of machines, bearings being machine elements not for land vehicles, toothed wheels or gears being machine elements not for land vehicles, shafts, axles or spindles not for land vehicles; machine parts, namely, keys being mechanical elements ] [ electric lamps and other lighting apparatus, namely, electric lights for offices and factories; standing paper lanterns (andon); gas lamps; oil lamps; portable paper lanterns (chochin); lamp chimneys; industrial furnaces; nuclear reactors being atomic piles; electric boilers other than parts of prime movers and engines; gas boilers other than parts of prime movers and engines; gas water heaters for household purposes; sinks integrated into kitchen worktops; kitchen sinks; non-electric cooking heaters for household purposes, namely, gas cooking ovens and Japanese kitchen furnaces; industrial deep fryers; electric industrial dish drying machines; industrial rice cookers; electric industrial cooking pots; industrial gas and electric roasters; industrial cooking ovens; freezing machines and apparatus being freezers; ice chests for household purposes, non-portable; ice-cooling refrigerators for household purposes; forage drying apparatus; milk sterilizers; drying apparatus for chemical processing; recuperators for chemical processing; steamers for chemical processing; evaporators for chemical processing; distillers for chemical processing; heat exchangers for chemical processing; air-conditioning apparatus for industrial purposes; toilet bowls and seats sold as a unit; prefabricated bathrooms sold as a unit; solar water heaters; water purifying apparatus; household electrothermic appliances, namely, water heaters and drink dispensing machines; bath fittings in the nature of plumbing fittings, namely, shower unit, unit for bathroom with dressing room, bathtub with shower, bathing equipment and shower type bathing equipment; household tap-water filters; washers for water taps; tap water faucets; pipe line cocks being plumbing fittings; waste water treatment tanks for industrial purposes; waste water treatment tanks for household purposes; septic tanks for household purposes; garbage incinerators; septic tanks for industrial purposes; toilet stool units with a washing water squirter; disinfectant dispensers for toilets; toilet bowls; seatings for use with Japanese style toilet bowls; warming pans, non-electric, for beds; non-electric pocket warmers, namely, chemically-activated heating packets for warming hands; stick fuel for Japanese pocket warmers (kairo-bai); heating or cooling packs filled with chemical substances ready to react when required; hot water bottles for warming one's feet in bed ]
85.
Method of heat treatment and the directions for use of furnace of heat treatment
A furnace of heat treatment capable of keeping a stable nitriding quality for a long period of time is provided. The furnace of heat treatment performs a halogenation treatment and a nitriding treatment by heating a steel material under a predetermined atmosphere. An alloy containing Ni ranging between 50 mass % or more and 80 mass % or less and Fe ranging between 0 mass % or more and 20 mass % or less is used as a material of surfaces of core internals exposed to a treatment space where the nitriding treatment is performed. Accordingly, a nitriding reaction is hardly caused on the surfaces of the core internals, and the halogenation treatment and the nitriding treatment to an article to be treated can be stably executed for a long period of time. Further, a nitrided layer can be stably formed according to purposes on any types of steel materials including a steel type hard to be nitride.
C21D 1/76 - Adjusting the composition of the atmosphere
C22C 19/05 - Alloys based on nickel or cobalt based on nickel with chromium
C23C 8/02 - Pretreatment of the material to be coated
C23C 8/34 - Solid state diffusion of only non-metal elements into metallic material surfacesChemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases more than one element being applied in more than one step
F27B 5/04 - Muffle furnacesRetort furnacesOther furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
F27D 7/02 - Supplying steam, vapour, gases or liquids
F27D 7/06 - Forming or maintaining special atmospheres or vacuum within heating chambers
86.
Unextracted tooth root canal filler and dental tissue regeneration method for unextracted tooth
Disclosed is a root canal filler for non-extracted tooth which causes no internal resorption or external resorption in a tooth with complete root formation, shows no odontoclast, and contributes to the regeneration of a dental tissue in which odontoblasts are smoothly aligned on the dentin wall. After pulpectomy or enlargement/cleaning of an infected root canal, a root canal filler for non-extracted tooth, which comprises tooth pulp stem cells and an extracellular matrix, is inserted into the apical side of the root canal of the non-extracted tooth. The tooth pulp stem cells may be, for example, dental pulp CXCR4-positive cells. It is preferred to attach, to the crown side of the root canal, migration factor(s) including at least one factor selected from among a cell migration factor, a cell proliferation factor, a neurotrophic factor and an angiogenic factor.
A single crystal SiC substrate is produced with low cost in which a polycrystalline SiC substrate with relatively low cost is used as a base material substrate where the single crystal SiC substrate has less strain, good crystallinity and large size. The method including a P-type ion introduction step for implanting P-type ions from a side of a surface Si layer 3 into an SOI substrate 1 in which the surface Si layer 3 and an embedded oxide layer 4 having a predetermined thickness are formed on an Si base material layer 2 to convert the embedded oxide layer 4 into a PSG layer 6 to lower a softening point, and an SiC forming step for heating the SOI substrate 1 having the PSG layer 6 formed therein in an atmosphere hydrocarbon-based gas to convert the surface Si layer 3 into SiC, and thereafter, cooling the resulting substrate to form a single crystal SiC layer 5 on a surface thereof.
An angiogenesis regulating composition used to treat/prevent an angiogenic disease in a subject, that contains in an effective amount at least one of nitrate, nitrite, and a compound convertible into nitrate or nitrite after the compound is absorbed into the subject, and an angiogenesis regulation method administering to a subject a composition containing as an active ingredient at least one of nitrate, nitrite, and a compound convertible into nitrate or nitrite after the compound is absorbed into the subject, provide a composition effective in treating and preventing angiogenic diseases, that can medically control angiogenic diseases, and medically regulate angiogenesis in ophthalmologic diseases in particular, and allows treatment without inhibiting physiological neovascularization, with a limited side effect and significantly safely, and an angiogenesis regulation method using the same.
Provided is a method for manufacturing 4,4'-oxydiphthalic acid with favorable productivity and high-yield via 4,4'-oxydiphthalonitrile, using 4-nitrophthalonitrile as a reaction raw material; the method including a hydrolysis step for hydrolyzing the 4,4'-oxydiphthalonitrile under acidic conditions, the hydrolysis being achieved by heating the 4,4'-oxydiphthalonitrile in the presence of an aliphatic carboxylic acid, an inorganic acid, and water. 4,4'-oxydiphthalonitrile obtained by heating 4-nitrophthalonitrile in a solvent in the presence of an alkali metal salt is preferably provided for hydrolysis.
C07C 51/08 - Preparation of carboxylic acids or their salts, halides, or anhydrides from nitriles
C07C 65/24 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic
C07D 307/89 - Benzo [c] furansHydrogenated benzo [c] furans with two oxygen atoms directly attached in positions 1 and 3
Provided is a liquid-gas transport vehicle which, even if it is not possible to ensure electricity in a storage facility for storing the liquid gas transported by the liquid-gas transport vehicle, is capable of moving the liquid gas to the storage tank of the storage facility by using an electric pump installed in the liquid-gas transport vehicle itself, and does not require an increase or decrease to the internal pressure of the storage tank or of the built-in tank for holding the liquid gas. This liquid-gas transport vehicle is one provided with a tank (T) for holding the liquid gas, and an electric pump (P) for discharging the liquid gas in the tank (T) to the exterior thereof, the liquid-gas transport vehicle being further equipped with a lithium-ion secondary battery (B2) for powering the electric pump (P), and a power source such as a capacitor.
An artificial respirator (1, 31) for supplying gas, in which oxygen and a medical gas other than oxygen is mixed, to a patient as inhalation gas (5), the artificial respirator (1, 31) being provided with a first gas supply device (2) for supplying a gas containing oxygen, an intratracheal tube path (7) inserted into and remaining in the trachea of the patient, an extratracheal tube path (8) for connecting the first gas supply device (2) with the intratracheal tube path (7) and for guiding the gas containing oxygen to the patient from the first gas supply device (2), and a second gas supply device (13) connected to the extratracheal tube path (8) or the intratracheal tube path (7) and for supplying the mixed gas of oxygen and a medical gas other than oxygen to the extratracheal tube path (8) or the intratracheal tube path (7). As a consequence, an artificial respirator with which an efficient artificial respiration is possible while being able to reduce the consumption amount of medical gas other than oxygen is provided.
Provided is a radial type adsorption vessel that can suppress gas drift and reduce pressure loss by a simple structure, can increase separation performance and reduce consumed mechanical power, and for which fabrication and maintenance are easy. The present invention is constituted so as to include: a raw material gas flow path (2) disposed in a circle in the inside part of a cylindrical vessel (1); a product gas flow path (3) disposed in the center part of the cylindrical vessel (1); and an adsorbing agent layer (4) formed between the raw material gas flow path (2) and the product gas flow path (3). An introduction opening (5) by which raw material gas is introduced into the cylindrical vessel (1) is linked to the raw material gas flow path (2) at one end side of the cylindrical vessel (1) in the axial direction. A discharge opening (6) from which the product gas is discharged from the cylindrical vessel (1) is linked to the product gas flow path (3) on the one end side of the cylindrical vessel (1). The ratio of the flow path cross-sectional area of the raw material gas flow path (2) to the flow path cross-sectional area of the product gas flow path (3) is set at 1.2 - 3.3. Thus, drift can be effectively suppressed and uniformity of gas flow can be increased without using a complicated structure such as a tapered shaped or a conical shaped structure.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
The present invention provides a method, as a means for industrially producing a refined 6-bromo-2-naphthalenecarboxylic acid product from a crude 6-bromo-2-naphthalenecarboxylic acid product, comprising: causing the above crude product to react with sodium hydroxide in water to precipitate a sodium salt of 6-bromo-2-naphthalenecarboxylic acid; performing recrystallization treatment for the obtained precipitate; causing the obtained crystal to react with acid in water to precipitate 6-bromo-2-naphthalenecarboxylic acid; and recovering the obtained precipitate.
A cryogenic pump for liquefied gases is provided, which shortens precooling time, has a small loss of cryogenic liquefied gas, excels in pump efficiency, and is advantageous in cost. A motor 1 and an impeller 2 are coupled by a shaft 3 for transmitting a rotative drive force therebetween, and the motor 1 is arranged on an upper side and the impeller 2 is arranged on a lower side. The motor 1 and the impeller 2 exist in an enclosed space 14 where they are communicated with each other and into which the cryogenic liquefied gas is introduced. A heat adjusting unit 11 is provided between the motor 1 and the impeller 2, the heat adjusting unit maintaining existence of the impeller 2 in a liquid phase of the cryogenic liquefied gas and maintaining existence of the motor 1 in a gas phase of the cryogenic liquefied gas. Thus the submerging of the motor 1 in the liquid becomes unnecessary, whereby the precooling time can be reduced remarkably and the loss of cryogenic liquefied gas due to vaporization caused by the submerging can be reduced, and in addition, the motor 1 itself can be configured at a comparatively low cost.
F04D 7/02 - Pumps adapted for handling specific fluids, e.g. by selection of specific materials for pumps or pump parts of centrifugal type
F04D 7/00 - Pumps adapted for handling specific fluids, e.g. by selection of specific materials for pumps or pump parts
F04B 15/08 - Pumps adapted to handle specific fluids, e.g. by selection of specific materials for pumps or pump parts for liquids near their boiling point, e.g. under subnormal pressure the liquids having low boiling points
F04D 29/58 - CoolingHeatingDiminishing heat transfer
95.
METHOD FOR MANUFACTURING LIQUID-REPELLENT RESIN SHEET, METHOD FOR MANUFACTURING LIGHT-GUIDE PLATE, APPARATUS FOR MANUFACTURING LIQUID-REPELLENT RESIN SHEET, AND SYSTEM FOR MANUFACTURING LIGHT-GUIDE PLATE
Provided are: a method for manufacturing a liquid-repellent resin sheet, in which it is possible to avoid damage while performing liquid repellent treatment using atmospheric-pressure plasma; a method for manufacturing a light-guide plate; a liquid-repellent resin sheet; a liquid repellent treatment apparatus; and a system for manufacturing a light-guide plate. The method for manufacturing a liquid-repellent resin sheet according to an embodiment of the present invention has a step for performing a liquid repellent treatment by atmospheric-pressure plasma on the principal surface (40a) of a resin sheet (40) disposed between a pair of electrodes (521, 522) disposed facing each other, by generating an atmospheric-pressure plasma in an atmospheric gas (G) between the pair of electrodes. Electric power corresponding to an electric power density of 1 W/cm2 to 25 W/cm2 is supplied to the electrodes, and the atmospheric gas includes argon and a perfluorocarbon.
Provided is an insulating material which uses an epoxy resin composition that has excellent dielectric characteristics and practical characteristics at the same time, said insulating material being suitable for use as an interlayer insulating material for multilayer printed wiring boards. The present invention is an insulating material which is obtained using an epoxy resin composition that contains, as an epoxy resin curing agent, 50-100 wt% of a polycondensation type aryloxysilane compound that has a hydroxyl equivalent weight within the range of 1,000-8,000 g/eq, said epoxy resin composition also containing an epoxy resin that has an epoxy equivalent weight of 200-500. A thermally cured product obtained by curing this epoxy resin composition at a temperature of 180°C or less has a dielectric constant of 3.00 or less and a dielectric loss tangent of 0.015 or less at 1 GHz at room temperature.
C08G 59/40 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the curing agents used
To provide a method of manufacturing a single crystal 3C-SiC substrate that can dramatically reduce surface defects generated in a processing of epitaxial growth and can secure a quality as a semiconductor device while simplifying a post process. The method of manufacturing a single crystal 3C-SiC substrate where a single crystal 3C-SiC layer is formed on a base substrate by epitaxial growth is provided. A first growing stage of forming the single crystal 3C-SiC layer to have a surface state configured with a surface with high flatness and surface pits scattering in the surface is performed. A second growing stage of further epitaxially growing the single crystal 3C-SiC layer obtained in the first growing stage so as to fill the surface pits is performed.
A steel product that combines excellent corrosion resistance and adhesiveness is provided. The steel product is obtained by forming a nitride compound layer and a nitrogen diffusion layer on the surface layer of a steel base material. The nitride compound layer contains a first compound layer that is formed on the nitrogen diffusion layer side, and a second compound layer that is formed on the surface side of the first compound layer. The first compound layer has an ε-structure composed mainly of Fe3N, and the second compound layer has a higher nitrogen concentration than the first compound layer, and has protrusions and recesses formed on the surface. This configuration enables a nitride compound layer with excellent adhesiveness, extremely low carbon content and high corrosion resistance to be formed.
Non-thermofusible phenol resin powder, method for producing the same, thermosetting resin composition, sealing material for semiconductor, and adhesive for semiconductor
Disclosed is a non-thermofusible phenol resin powder having an average particle diameter of not more than 20 μm and a single particle ratio of not less than 0.7. This non-thermofusible phenol resin powder preferably has a chlorine content of not more than 500 ppm. This non-thermofusible phenol resin powder is useful as an organic filler for sealing materials for semiconductors and adhesives for semiconductors. The non-thermofusible phenol resin powder is also useful as a precursor of functional carbon materials such as a molecular sieve carbon and a carbon electrode material.
Provided is a thermally expandable graphite having a thermal expansion starting temperature of 260ºC and a degree of expansion at 1,000ºC of 180 cc/g or greater as a thermally expandable graphite that is used as a component of a halogen-free flame retardant having excellent properties. The thermally expandable graphite can be produced by a production method comprising a step for oxidation of starting graphite using a treatment solution comprising sulfuric acid having a weight ratio per starting graphite of 2 or greater and an oxidizer comprising hydrogen peroxide at 3 wt% or greater in terms of an aqueous solution containing 60 wt% of hydrogen peroxide.
