A method for depositing layers containing a group five element on a substrate, in which process gas is fed into a process chamber. After depositing the layer, the process chamber is cleaned as follows. The process chamber is heated to a first cleaning temperature. After reaching the first cleaning temperature, a halogen or a halogen compound is fed into the process chamber in a first cleaning step. After the first cleaning step, the process chamber is brought to a second cleaning temperature. After reaching the second cleaning temperature, O2 is fed into the process chamber in a second cleaning step. After the second cleaning step, the process chamber is brought to a third cleaning temperature. After reaching the third cleaning temperature, substantially only H2 is fed into the process chamber in a third cleaning step. After the third cleaning step, the process chamber is cooled.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
2.
METHOD OF PROVIDING A PROCESS GAS FOR A CVD REACTOR AND CORRESPONDING APPARATUS
The invention relates to an arrangement for provision of a process gas for a CVD reactor, having a first carrier gas feed with a first mass flow regulator having a small flow range and a second carrier gas feed with a second mass flow regulator having a large flow range, each of which is fed by a carrier gas source, wherein the carrier gas feed opens out in an evaporation device for evaporation of a solid or liquid starting material, from which there originates a process gas feed to the CVD reactor, wherein, disposed downstream of the second mass flow regulator in the second carrier gas feed with the second mass flow regulator, there is a valve arrangement that has an inlet and a first outlet having flow connection to the evaporation device and having a second outlet having flow connection to a bypass conduit that does not open into the evaporation device, wherein, by switching of the valve arrangement, the mass flow of carrier gas regulated by the mass flow regulator electively flows through or past the evaporation device, and to a method of operating such an arrangement.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A supporting ring is arranged in a CVD reactor and is part of a bearing arrangement which is intended for the mounting of a substrate. The bearing arrangement is arranged above a susceptor and is supplied with heat by the susceptor. The heat is transferred from the susceptor to a radially outer region or to a radially inner region of the supporting ring via an annular web of the supporting ring.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The invention relates to a device for feeding a process gas into a process chamber (4) of a CVD reactor, the device comprising: a gas distribution body (12) having a central region (15) in which an opening (14) of a gas supply line (13) is arranged, which opening extends only over a partial circumference of the outer side thereof; and comprising flow barriers (17, 19, 21) having an inner side (17', 19', 21') and an outer side (17'', 19'', 21'') and comprising a plurality of gas passage channels (22, 23, 24) which are identical to one another and evenly distributed over the circumference of the flow barrier (17, 19, 21). In order to reduce the required manufacturing tolerances, the gas passage channels (22, 23, 24) are longer than the distance, measured in the radial direction, between the inner side (17', 19', 21') and the outer side (17'', 19'', 21''). The passage channels (22, 23, 24) each have an inlet channel (25) which branches into at least two branch channels (26, 26') in the interior of the flow barrier (17, 19, 21), wherein the branch channels (26, 26') each continue at least into one outlet channel (27) which opens out in the outer side of the flow barrier (17, 19, 21).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A gas-inlet element for a CVD reactor includes a gas distribution volume arranged rearward of a gas outlet plate, from which volume pipes having end portions protruding from the gas outlet plate on the front side emerge. The pipes extend into through openings in a shield plate assembly extending parallel to the gas outlet plate. The through openings have a first portion facing the gas outlet plate with a large diameter which is larger than the outer diameter of the respective end portions, and a second portion facing away from the gas outlet plate with a smaller diameter. In order to prevent temperature non-uniformities in the region of the through openings, the diameter of the second portion is smaller than the outer diameter of the respective end portions. The shield plate arrangement additionally consists of two shield plates with different thermal conductivities arranged one above another.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
The invention relates to a device and a method for treating a plurality of substrates (32), wherein the substrates (32) are arranged in storage locations (7) of a susceptor (5) arranged in a housing cavity of a reactor housing (1), wherein a process gas flow (S1) of a process gas is fed into the housing cavity from one or more gas outlet openings (6') of a gas inlet member (6), in such a way that the process gas flows evenly over the storage locations (7) to a gas outlet member (9) arranged downstream of the storage locations (7) in relation to the process gas flow, by means of which the process gas is fed out of the housing cavity, wherein a locally limited control gas flow (S2) of a control gas is fed into the housing cavity through at least one control gas inlet opening (10) opening into the housing cavity. In order to compensate for the locally bounded influence of the control gas flow (S2) on the flow profile, a compensating inlet or outlet opening (23) is provided downstream of the control gas inlet opening (10) and downstream of the storage location (7), through which a locally bounded compensation gas flow (S3) of a compensation gas flows.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
13.
METHOD FOR DEPOSITING GALLIUM NITRIDE GAN ON SILICON SI
The invention relates to a method for depositing a layer consisting of elements of main groups III and V on a SiC surface of a substrate made of silicon in a process chamber (2) of a CVD reactor, in which method the SiC surface is generated by means of a first chemical reaction of a first gaseous starting material containing carbon with the surface of the Si substrate at a first increased temperature of the substrate (6), and the layer is generated by means of a second chemical reaction of a second gaseous starting material containing the element of main group III with a third gaseous starting material containing the element of main group V at a second increased temperature.
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
The invention relates to a method for operating a coating device, by means of which a product having at least one layer deposited on a substrate (7) can be produced, in which product a recipe can be processed. A stop event (ES) is triggered if at least one characteristic property of the substrate (7), the layer, gas flows or the atmosphere inside the process chamber does not have a predefined relationship (VB1, VB2) with a predefined property (VE1, VE2). According to the invention, when the stop event (ES) occurs, the supply lines (18, 19) from the gas source (20, 21) are to be shut off.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
15.
METHOD AND DEVICE FOR DEPOSITING SIC LAYERS ON A SUBSTRATE
A method for depositing a layer on a substrate (9), wherein a homogeneous first gas flow is fed by means of a gas-inlet member (6) into a process chamber (4) brought to a process temperature, flows over the substrate (9) in a flow direction (S) and contains one or more reactive gases, the decomposition products of which form the layer, wherein a second gas flow is fed into the process chamber (4) through a gas-outlet area of a gas-outlet opening (10, 10', 10'') arranged downstream of the gas-inlet member (6) and upstream of the substrate (9), and contains at least one gas that influences a dopant concentration within the layer, wherein the width (B1), extending transversely to the flow direction (S), of the gas-outlet opening (10, 10', 10'') is less than the width (B2), extending transversely to the flow direction (S), of the substrate (9), and a gas that influences the composition of the layer flows through the gas-outlet opening (10, 10', 10'').
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
16.
DEVICE FOR DEPOSITING SIC LAYERS ON A SUBSTRATE, COMPRISING AN ADJUSTABLE GAS OUTLET ELEMENT
The invention relates to a device for depositing a layer on a substrate (1). A first gas flow is supplied into a process chamber (2), which has been brought to a process temperature, by means of a gas inlet element (3), said first gas flow flowing in a flow direction (SI) across a storage area (4) in which the substrate (1) is placed, on a susceptor (5) which extends on a horizontal plane and can be heated by a heating device (26), the first gas flow containing one or more reactive gases, the decomposition products of which form the layer. The device comprises a gas outlet opening (6, 6') which is arranged downstream of the gas inlet element (3) and upstream of the storage area (4) in a defined position relative to the storage area (4) in order to supply a second gas flow into the process chamber (2), said second gas flow containing at least one reactive gas which influences the composition of the layer or a dopant concentration within the layer. The position of the gas outlet opening (6, 6') relative to the storage area (4) can be adjusted.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
C23C 16/52 - Controlling or regulating the coating process
H01L 21/66 - Testing or measuring during manufacture or treatment
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
18.
CVD REACTOR HAVING A REMOVABLE PROCESS-CHAMBER HOUSING
The invention relates to a CVD reactor having a reactor housing (1) comprising a lower housing part (3) which is closed at the top by a removable lid (2), wherein: a process-chamber housing (10) surrounding a process chamber (14) is located in the reactor housing (1); a gas-inlet member (18) and a gas-outlet member (19) are in flow connection with the process chamber (14); the process-chamber housing (10) can be heated by means of a heating device (15) located in the reactor housing (1); connections (17) of the heating device (15) are leading out of the process-chamber housing (10); and the process-chamber housing (10) can be removed from the reactor housing (1) together with the heating device (15). For the purpose of cleaning or replacing the process-chamber housing (10), the process-chamber housing (10) and the heating device (15) are fixedly connected to the lid (2) in such a way that, when the lid (2) is removed, the process-chamber housing (10) and the heating device (15) remain attached to the lid.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
B01J 3/00 - Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matterApparatus therefor
19.
APPARATUS AND METHOD FOR DEPOSITING CARBON-CONTAINING STRUCTURES
An apparatus deposits carbon-containing structures on a substrate conveyed through an interior space of a housing. The interior space has a central zone between a first peripheral zone and a second peripheral zone. The substrate enters the housing through a first opening of the housing, passes through the first peripheral zone, central zone, and second peripheral zone, and leaves the housing through a second opening of the housing. The second peripheral zone has a gas inlet with a gas outlet opening that feeds a carbon-containing process gas into the housing. The housing has a heating device partially disposed in the central region for thermally activating the process gas. A pump evacuates gas from the interior space through a gas outlet. Means are provided for the controlled entry of a reactive gas into the first and second peripheral zones.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A CVD reactor comprising a gas inlet element which has a cooling device and gas outlet openings which lead into a process chamber. The process chamber has a feeder zone directly adjoining the gas inlet element and a process zone with one or more substrate holders. The process zone follows the feeder zone in a flow direction of a process gas entering the process chamber from the gas outlet openings. The feeder zone has a first floor portion directly adjoining the gas inlet element and a second floor portion located between the first floor portion and the process zone. In order to prevent the formation of parasitic coatings during deposition of, for example, silicon carbide at the start of the feeder zone, the first floor portion rises in the flow direction, so that the height of the process chamber initially decreases starting from the gas inlet element.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The invention relates to a device for thermally treating a substrate (3) with a heating apparatus (4) arranged in a reactor housing (1) to heat the substrate (3), wherein during heating of the device, a flow of heat (8) flows from a heating apparatus (4) to a substrate (3) and during cooling a flow of heat (7) flows from the substrate (3) to a cold region (2). To minimise the heating and cooling time, a shielding apparatus (5) for influencing the flow of heat (7) is proposed that can be adjusted between a first and a second operating position, wherein the shielding apparatus (5) has several shielding elements (6, 6') that can be moved relative to one another.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/52 - Controlling or regulating the coating process
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
In the thermal treatment of substrates, a susceptor is used to hold at least one substrate. The susceptor can be heated with a heater and driven in rotation about a rotation axis by a rotary drive. Means are provided to influence the heat transfer to or from the susceptor in a locally limited manner, synclyronzed with the rotary movement of the susceptor, to equalize local temperature differences on the rotating susceptor. In particular, a temperature control gas with changing heat conduction properties is periodically fed in a pulsed manner through a feed opening into a gap between the susceptor and a cooling unit.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
A substrate is coated with a multilayer structure which has layers of a first portion and layers of a second portion that are deposited on the layers of the first portion. During the deposition of at least one layer of the second portion, at least one optical measuring apparatus measures an emissivity value and a reflectance value on the broad side of the substrate, which broad side comprises the layer. Using a previously determined correction value, an actual value of a temperature of the broad side of the substrate is calculated and, using the actual value, a heating apparatus is controlled in order to control the temperature of the substrate to match a target value of the temperature of the broad side of the substrate. The correction value is determined during the deposition of the first portion, which is carried out immediately before the deposition of the second portion.
C23C 16/52 - Controlling or regulating the coating process
G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device. The gas inlet member has a cooled ceiling panel with outlet openings. The CVD reactor further comprises a shield plate, which adjoins the ceiling panel and has a circular outline. The shield plate has a central zone, an annular zone surrounding the central zone, having a rear side that points toward the ceiling panel, and a flat gas outlet surface pointing toward the process chamber, in which gas outlet openings terminate. The rear side in the central zone defines a rear plane running parallel to the gas outlet surface. The shield plate has a material thickness between 3 to 12 mm, and that the shield plate is spaced apart from the ceiling plate by a gap having a height between 0.3 to 1 mm.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A CVD reactor includes a reactor housing, a susceptor that forms a floor of a process chamber, a gas inlet member with at least one gas inlet region, a heating device arranged under the susceptor for producing a difference in temperature between the main body of the susceptor and a ceiling of the process chamber, substrate carriers located at a distance from the gas inlet member in a direction of flow, and flow zone plates arranged between the gas inlet member and each of the substrate carriers. For each flow zone plate, a flow zone temperature of a surface of the flow zone plate which faces the process chamber can be set by respectively selecting or setting a heat transfer medium. For individually controlling each of the flow zone temperatures, the flow zone plates can be exchanged with other flow zone plates with different flow transfer properties.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
31.
GAS INLET ELEMENT OF A CVD REACTOR WITH TWO INFEED POINTS
In a device and a method for depositing at least one layer on at least one substrate, a first gas flow comprising a reactive gas is fed through a first gas inlet opening, and a second gas flow is fed through a second gas inlet opening, into at least one gas distribution volume of a gas inlet element. The inlet element has a gas outlet surface with a multiplicity of gas outlet openings which are fluidically connected to the gas distribution volume and through which the reactive gas enters the process chamber. Products of a physical or chemical reaction of the reactive gas that have entered the process chamber form a layer on the surface of the substrate. The two gas flows are fed into the same gas distribution volume, such that zones with different concentrations of the reactive gas form within the gas distribution volume.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
32.
CVD APPARATUS AND METHOD OF CLEANING A PROCESS CHAMBER OF A CVD APPARATUS
The invention relates to a method of operating a CVD reactor, wherein the deposition of one or more layers onto one or more substrates in a process chamber (2) is followed by cleaning of one or more surfaces of the process chamber (2) to remove adhering deposits with a cleaning gas, wherein the cleaning gas is fed into the process chamber (2) together with a carrier gas through a cleaning gas inlet opening (3), this flows through the process chamber (2) that has been brought to a first elevated temperature (T1), and in so doing reacts chemically with the deposits to give gaseous reaction products, and the reaction products are transported by the carrier gas as offgas through a gas outlet (5) at a first reduced temperature (T2) lower than the first elevated temperature (T1) to a gas cleaning device (6, 7), wherein the gas cleaning device (6, 7) includes a pretreatment device (7) in which the reaction products are pretreated at a second elevated temperature (T3) higher than the first reduced temperature (T2), and wherein the pretreated reaction products are transported to a cold trap (6) in which the reaction products condense at a second reduced temperature (T4) lower than the second elevated temperature (T3). In order to increase the efficiency of gas cleaning, it is proposed that the offgas cooled down to a maximum of 160°C be heated up in the pretreatment device (7) with a gas heating device (8) to an elevated temperature of preferably 200°C overall, such that agglomerates formed on prior cooling break down again.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
B01D 5/00 - Condensation of vapoursRecovering volatile solvents by condensation
B01D 53/00 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
H05B 3/40 - Heating elements having the shape of rods or tubes
F01N 3/033 - Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for cooling, or for removing solid constituents of, exhaust by means of filters in combination with other devices
B01D 46/42 - Auxiliary equipment or operation thereof
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
E,nR,nE,nR,nERE,nR,nR,n) oscillating over time t differ slightly from one another, leading to an oscillation of the actual temperature value. To counteract this phenomenon, the invention proposes the use of values modified by a numerical time transformation rather than the use of the measured values.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
35.
DEVICE AND METHOD FOR EVAPORATING AN ORGANIC POWDER
In a method for evaporating a non-gaseous starting material, the starting material is introduced into an evaporation chamber; an evaporation element heats the starting material to create a vapor; a conveying gas flow transports the vapor through a conveying channel and past a sensor, which measures the concentration or partial pressure of the vapor in the gas flow flowing through the conveying channel; and the mass flow of the vapor through the conveying channel is controlled by varying the conveying gas flow with respect to a setpoint value. To keep the vapor flow largely constant over time, a compensating gas flow is fed into the conveying channel at a mixing point disposed between the evaporator and the sensor. A second mass flow controller controls the mass flow of the compensating gas flow such that, when the conveying gas flow varies, the gas flow flowing past the sensor remains constant.
C23C 14/54 - Controlling or regulating the coating process
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
G05D 11/13 - Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
09 - Scientific and electric apparatus and instruments
Goods & Services
Chemical vapour deposition (CVD) reactors; drive mechanisms
and apparatus for use in the coating of wafer discs. Apparatus and equipment for controlling chemical vapours and
gases; checking (supervision) and measuring equipment and
apparatus for all the aforesaid goods.
37.
METHOD AND DEVICE FOR DEPOSITING A LAYER CONTAINING A GROUP FIVE ELEMENT IN A PROCESS CHAMBER, AND SUBSEQUENT CLEANING OF THE PROCESS CHAMBER
122223222 is fed into the process chamber (2) in a third cleaning step (23); and wherein, after the third cleaning step (23), the process chamber (2) is cooled (24).
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
38.
METHOD FOR ASCERTAINING THE END OF A CLEANING PROCESS FOR A PROCESS CHAMBER OF A MOCVD REACTOR
In a cleaning process for removing parasitic depositions on surfaces of a process chamber of a CVD reactor, a susceptor of the CVD reactor is heated by a heating device, and the susceptor is regulated to a specified temperature or is heated with a constant heat output. Concurrently, an etching gas is supplied to the heated process chamber. The thermal response of at least one object is monitored, in which the thermal response is the temperature of the wide face of a process chamber cover, the wide face facing away from the process chamber. The parasitic depositions influence the emissivity of the surface of the process chamber cover, the emissivity influencing the temperature distribution in the process chamber. The supply of etching gas is terminated when the temperature reaches a comparison value, the temperature changing in response to changes in the surface emissivity during the cleaning process.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
39.
CVD REACTOR WITH A SUPPORTING RING, AND SUPPORTING RING FOR A SUBSTRATE
The invention relates to a supporting ring (20), which is arranged in a CVD reactor and is part of a bearing arrangement which is intended for the mounting of a substrate (10) and is arranged above a susceptor and is supplied with heat by the susceptor, wherein it is essential that the heat is transferred from the susceptor to a radially outer region (21) or to a radially inner region (22) of the supporting ring (20) via an annular web (33) of the supporting ring (20).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C30B 25/10 - Heating of the reaction chamber or the substrate
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
40.
CVD REACTOR AND METHOD FOR CONTROLLING THE SURFACE TEMPERATURE OF THE SUBSTRATES
In a CVD reactor and a method for the open-loop/closed-loop control of the surface temperature of substrates arranged therein, the substrates lie on substrate-retaining elements, which are each supported by a gas cushion. Actual values of the surface temperatures associated with a respective substrate-retaining element are successively measured and the surface temperatures are controlled in a closed-loop manner to a common value by varying the gas cushion height. After measuring each actual value of the surface temperature associated with a substrate-retaining element and using only the respective last-measured actual value of the surface temperatures of each substrate-retaining element, a first average value is calculated, a difference value associated with the substrate-retaining element is calculated, and an approximate actual value is calculated for each of the other substrate-retaining elements by adding the associated difference value to the first average value, said approximate actual value being used for the open-loop/closed-loop control.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
The invention relates to an assembly for providing a process gas for use in a CVD reactor (1, 1', 1''), comprising an input mass-flow controller (10), (11) for providing a carrier gas flow which flows into an evaporation device (2, 2', 2''), the carrier gas flow conveying the vapor of a starting material (3), which starting material is stored in a container (4) of the evaporation device (2, 2', 2''), through a process gas feed line (9, 9', 9'') to the CVD reactor (1, 1', 1''), wherein the total pressure in the process gas feed line (9, 9', 9'') can be held at a predefined value by means of a pressure controller (8). In order to hold the mass flow of the starting material (3), which mass flow is to be fed into the CVD reactor, sufficiently constant over time, the gas stream flowing through the process gas feed lines (9, 9', 9'') is controlled by means of a mass-flow controller, and the concentration of the starting material in the process gas feed line (9, 9', 9'') at a predefined total pressure is measured.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
A two-dimensional layer is deposited onto a substrate in a CVD reactor, in which a process gas is fed into a process chamber. The process gas in the process chamber is brought to the substrate, and the substrate is heated to a process temperature. After a chemical reaction of the process gas, the layer forms on the surface. During or after the heating of the substrate to the process temperature, the process gas with a first mass flow rate is initially fed into the process chamber and then, while the substrate surface is being observed, the mass flow rate of the process gas is increased to a rate at which the layer growth begins, and subsequently the mass flow rate of the process gas is increased by a predetermined value, during which the layer is deposited. The beginning of the layer growth is identified by observing measurements from a pyrometer.
C23C 16/52 - Controlling or regulating the coating process
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A gas distribution device has a plurality of gas inlet regions that are arranged above each other and can be adjusted by switching on or off respective valves. The gas inlet regions can also be adjusted by switching over one or more feed conduits through which process gases can be fed into respective gas distribution volumes of gas outlet zones. The respective gas distribution volumes are arranged above each other at several levels. Only one uniform process gas can exit into a process chamber through each of the gas inlet regions.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
44.
METHOD FOR DEPOSITING A TWO-DIMENSIONAL COATING AND CVD REACTOR
A coating is deposited on a substrate in a CVD reactor that includes a process chamber and a gas inlet member with a first gas distribution chamber and a second gas distribution chamber separate from the first gas distribution chamber. To deposit heterostructures, in a first step, an inert or a diluent gas is fed into the first gas distribution chamber and a reactive gas containing the elements of a first coating is fed into the second gas distribution chamber. The reactive gas pyrolytically decomposes in the process chamber to form the first coating on the substrate. In a second step, a diluent gas is fed into the second gas distribution chamber and a reactive gas containing the elements of a second coating is fed into the first gas distribution chamber. The reactive gas or gas mixture decomposes in the process chamber to form the second coating on the substrate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
A gas inlet element for a CVD reactor includes a cylindrical main body, which together with an outer wall, forms a gas outlet face. The outer wall surrounds at least one gas distribution chamber. A plurality of gas outlet openings originating in the gas distribution chamber open out into the gas outlet face. A cooling device includes a plurality of cooling channels running adjacently but separately in the outer wall, and the gas outlet openings extend between the cooling channels.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The invention relates to a gas-inlet element (2) for a CVD reactor (1) with a first gas distribution volume (6) arranged rearward of a gas outlet plate (3), from which volume first pipes (4) having end portions (4') protruding from the gas outlet plate (3) on the front side emerge and which extend into first through openings (5) in a shield plate assembly (10, 11) extending parallel to the gas outlet plate (3), wherein the first through openings (5) have a first portion (5') facing the gas outlet plate (3) with a large diameter which is larger than the outer diameter of the end portion (4'), and a second portion (5'') facing away from the gas outlet plate (3) with a smaller diameter. In order to prevent temperature non-uniformities in the region of the through openings (5), provision is made that the diameter of the second portion (5'') is smaller than the outer diameter of the end portion (4'). Provision is further made that the shield plate arrangement (10, 11) consists of two shield plates (10, 11) with different thermal conductivities arranged one above the other.
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
An apparatus for depositing organic layers on a substrate includes a gas-mixing device with one or more inlets, each for supplying a gas flow consisting of previously vaporized organic molecules that are conveyed by a carrier gas and have a molar mass greater than 300 g/mol or 400 g/mol, gas diversion elements which homogeneously mix the organic molecules in the carrier gas, and an outlet from which a homogeneous gas mixture discharges. The apparatus also comprises a conveying pipe which is connected to the outlet, and a gas inlet element that has a gas distribution volume, into which the conveying pipe leads and which has a gas outlet face that has gas outlet openings and faces a substrate holder for receiving the substrate. Furthermore, layers are deposited on the substrate using such an apparatus. The lateral homogeneity of the deposited layers is improved by one of several techniques.
B05D 1/00 - Processes for applying liquids or other fluent materials
B05C 19/04 - Apparatus specially adapted for applying particulate materials to surfaces the particulate material being projected, poured or allowed to flow onto the surface of the work
A gas outlet surface of a gas inlet element for a CVD reactor or a gas outlet surface of a shielding plate for a gas inlet element has a multiplicity of gas outlet openings arranged around a center of the gas outlet surface. The central points of the gas outlet openings lie at the corner points of polygonal, identically formed cells, each having a geometrical central point. The position and the length of the edges of the cells are defined by intersecting reference lines, the reference lines being assigned to at least two families of lines, and the reference lines of a respective family extending linearly and parallel to one another over an entirety of the gas outlet surface. The center of the gas outlet surface is separated from one of the corner points by one-third±10 percent of the length of one of the edges.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
49.
CVD REACTOR HAVING A PROCESS CHAMBER FLOOR RISING IN A FEEDER ZONE
The invention relates to a CVD reactor comprising a gas inlet element (1) which has a cooling device (12, 16, 17) and gas outlet openings (14) which lead into a process chamber (2). The process chamber (2) has a feeder zone (V) directly adjoining the gas inlet element (1) and a process zone (P) following the feeder zone in a flow direction (S) of a process gas entering the process chamber (2) from the gas outlet openings (14), one or more holding locations (14) for holding substrates (6) being provided in the process zone. The feeder zone (V) has a first floor portion (10) which directly adjoins the gas inlet element (1) and a second floor portion (11) which is located between the first floor portion (10) and the process zone (P). In order to prevent the formation of parasitic coatings during deposition of, for example, silicon carbide at the start of the feeder zone, the first floor portion (10) rises in the flow direction (S), so that the height of the process chamber initially decreases starting from the gas inlet element.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
50.
METHOD FOR DEPOSITING A SEMICONDUCTOR LAYER SYSTEM, WHICH CONTAINS GALLIUM AND INDIUM
In a method for depositing semiconductor layers, a first process step is performed to deposit a layer containing gallium and a second process step is performed to deposit a layer containing indium. To prevent gallium from being incorporated from residues in the process chamber into the layer containing indium when the layer containing indium is deposited, a reactive gas containing indium is additionally supplied to the process chamber during the first process step and the first process parameters are adjusted such that the first layer contains no indium, or in an intermediate step between the first and second process steps, a reactive gas containing indium is supplied to the process chamber and the process parameters are adjusted such that no indium is deposited on the substrate during the intermediate step. In the second process step, the second process parameters are adjusted such that the second layer contains no gallium.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A susceptor arrangement for use in a CVD reactor includes a circular or annular susceptor with a first susceptor broad side, on which a substrate holder and at least one covering element are arranged. At least one of the covering elements consists of multiple covering plates, in which a lowermost covering plate is adjacent to the first broad side face of the susceptor, and an uppermost covering plate covers the lowermost covering plate at least in certain regions and forms a free broad side face of the susceptor arrangement. The covering plates are preferably produced from silicon carbide, and are connected to one another by positioning elements.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
52.
METHOD FOR RECORDING A STATE OF A CVD REACTOR UNDER PRODUCTION CONDITIONS
During a process involving one or more process steps of a process phase, in which a substrate is located in the process chamber of a CVD reactor, a process temperature and a pressure are each set and a process gas flow is fed into the process chamber by way of control data delivered by a controller in accordance with a formula stored in the controller. Additionally, sensors are used to determine measurement data from which a current fingerprint is calculated and then compared with a historic fingerprint. The fingerprint includes only values or groups of values that are obtained from measured values that are recorded during one or more conditioning steps of a conditioning phase in which a conditioning temperature and a conditioning pressure are each set and a conditioning gas flow is fed into the process chamber in accordance with control data specified by the formula.
C23C 16/52 - Controlling or regulating the coating process
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/54 - Apparatus specially adapted for continuous coating
The invention relates to a device for heating a susceptor (1) of a CVD reactor, comprising one or more elongate, electrically conductive heating elements (2, 12), which have heating portions (3, 13) with an outer broad side (6, 16) and an inner broad side (7, 17) and have fastening portions (4, 14) adjoining the heating portions (3, 13), wherein the fastening portions (4, 14) each have a fastening point (5, 15), at which the fastening portion (4) is connected to a contact element (10, 20). According to the invention, in order to avoid bulging of the heating portions during the heating of the heating apparatus, the fastening portions (4, 14) are bent toward the inner breadth (7, 17) of the heating portion (3, 13) such that the heating element is given a U shape.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C30B 25/10 - Heating of the reaction chamber or the substrate
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H05B 3/06 - Heater elements structurally combined with coupling elements or with holders
H05B 3/24 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor being self-supporting
54.
METHOD FOR MANUFACTURING AN ELECTRODE FOR A LITHIUM-ION BATTERY, AND ELECTRODE MANUFACTURED ACCORDING TO THE METHOD
The invention relates to an electrode of a lithium-ion battery or to a lithium-ion battery having an electrode (1), having carbon nanofilaments (2), which are applied to a surface of a contact element (9), are bundled into bundles and each bear an ion-absorbing coating (3). According to the invention, to prevent lithium ions being caught in the bundles during initial charging of the battery, a layer (4) which is electrically conductive but impermeable to lithium ions is deposited onto the bundles. The ion-absorbing coating is deposited onto this layer (4) enclosing the bundles.
ccss) of the temperature of the broad side of the substrate (22). It is essential that the correction value (γ) is determined during the deposition of the first portion (18), which is carried out directly before the deposition of the second portion (19).
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
56.
CVD REACTOR HAVING MEANS FOR LOCALLY INFLUENCING THE SUSCEPTOR TEMPERATURE
In the thermal treatment of substrates, a susceptor is used to hold at least one substrate. The susceptor can be heated with a heater and driven in rotation about a rotation axis by a rotary drive. Means are provided to influence the heat transfer to or from the susceptor in a locally limited manner, synchronized with the rotary movement of the susceptor, to equalize local temperature differences on the rotating susceptor. In particular, a temperature control gas with changing heat conduction properties is periodically fed in a pulsed manner through a feed opening into a gap between the susceptor and a cooling unit.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
A susceptor for a CVD reactor includes a bearing surface for supporting a substrate holder. A carrier gas is fed into an inner radial zone, in order to floatingly cushion a substrate holder supported above the bearing surface. The gas fed into the inner radial zone leaves a second radial zone through discharge channels and to a slight extent through a gap surrounding the second radial zone and assigned to a third radial zone. The cross-sectional area of the discharge channels and the radial length of the gap are dimensioned such that the volumetric flow of the gas through the discharge channels is greater than through the gap if the latter has a gap height of 200 μm.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
58.
CVD REACTOR WITH TEMPERATURE-CONTROLLABLE GAS INLET REGION
The invention relates to a CVD reactor with a susceptor (2), which is arranged in a reactor housing and forms a floor of a process chamber (1), with a gas inlet member (3), which has at least one gas inlet region (4, 4'), with a heating device (6), which is arranged under the susceptor (2) and is intended for producing a difference in temperature between the main body (7) and a process chamber ceiling (15), with a number of substrate carriers (12), which are at a distance from the gas inlet member (3) in a direction of flow and are intended for each receiving substrates (14) to be coated, and with a number of flow zone plates (10), which are arranged between the gas inlet member (3) and the substrate carriers (12), wherein a flow zone temperature of that surface of the flow zone plate (10) which faces the process chamber (1) in each case can be set by respectively selecting or setting a heat transfer medium (11). For individualizing the flow zone temperature, the flow zone plates (10) can be exchanged for other flow zone plates (10) with different flow transfer properties.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
C30B 25/10 - Heating of the reaction chamber or the substrate
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
59.
GAS INLET ELEMENT OF A CVD REACTOR WITH TWO INFEED POINTS
The invention relates to a device and a method for depositing at least one layer on at least one substrate (4), wherein a first gas flow comprising at least one reactive gas is fed through at least one first gas inlet opening (39), and at least one second gas flow is fed through at least one second gas inlet opening (25, 28), into at least one gas-distributing volume (11) of a gas inlet element (10), wherein the gas inlet element (10) has a gas outlet surface (61) which points toward a process chamber (8) and which has a multiplicity of gas outlet openings (16) which are fluidically connected to the gas-distributing volume (11) and through which the reactive gas enters the process chamber (8), and the substrate (4) is arranged in the process chamber (8) such that products of a physical or chemical reaction of the reactive gas that has entered the process chamber (8) form a layer on the surface of the substrate (4), wherein the two gas flows are provided, and fed into the same gas-distributing volume (11), such that zones with different concentrations of the reactive gas form within the gas-distributing volume (11). In order to prevent inhomogeneities of the layer thickness that are caused by a bulge of the substrate, it is proposed according to the invention that a reaction gas is fed into the gas-distributing volume (11) through the gas inlet openings (25, 28) with a different concentration in a carrier gas at different points.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 29/207 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
61.
Method for producing a component part of a CVD reactor
A component made of a quartz blank is used as a component part of a CVD reactor. At least one cavity of the component is created by selective laser etching, wherein a fluid flows through the at least one cavity. When in use, the component is heated to temperatures in excess of 500° C., and comes into contact with hydrides of the main groups IV, V or VI and/or with organometallic compounds or halogenides of elements of the main groups II, III or V.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
B23K 26/364 - Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
B23K 26/382 - Removing material by boring or cutting by boring
B23K 26/402 - Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
B23K 103/00 - Materials to be soldered, welded or cut
62.
METHOD FOR IDENTIFYING SUBSTRATES WHICH ARE FAULTY OR HAVE BEEN INCORRECTLY INSERTED INTO A CVD REACTOR
The invention relates to a method for identifying substrates (3) which are faulty or have been incorrectly inserted in a CVD reactor, with the aid of one or more optical sensors (3), which sense properties of the surfaces of the substrates, for example layer thickness or temperature, before or during a treatment process of the substrates (3) within the CVD reactor housing (1). The measurement values provided by the sensors (3) can be plotted in the form of a measurement curve, and patterns are obtained from the measurement curve, each pattern corresponding to one of the substrates (3). The patterns are compared with each other or with a mean (Lm) calculated from the patterns.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/52 - Controlling or regulating the coating process
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/66 - Testing or measuring during manufacture or treatment
A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device. The gas inlet member has a cooled ceiling panel with outlet openings. The CVD reactor further comprises a shield plate, which adjoins the ceiling panel and has a circular outline. The shield plate has a central zone, an annular zone surrounding the central zone, having a rear side that points toward the ceiling panel, and a flat gas outlet surface pointing toward the process chamber, in which gas outlet openings terminate. The rear side in the central zone defines a rear plane running parallel to the gas outlet surface. The shield plate has a material thickness between 3 to 12 mm, and that the shield plate is spaced apart from the ceiling plate by a gap having a height between 0.3 to 1 mm.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The invention relates to a transport ring for transporting a substrate (21), having an annular body (1) extending around an axis (A), with an annular lower part (2), the lower part (2) having an outer portion (6) and, radially inside the outer portion (6), a support surface (5) for supporting an edge of the substrate (21), the outer portion (6) carrying, with spacers (7, 7'), an annular upper part (3) which is distanced from a radially outer region of the outer portion (6) in a direction parallel to the axis (A) by a distance (D). According to the invention, the spacers (7, 7') are formed by individual ribs distanced from one another about the axis (A) in the circumferential direction, between which there is formed a gap which is open on both sides. The individual ribs are produced, for example, by wire erosion.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
65.
CVD PROCESS AND CVD REACTOR WITH EXCHANGEABLE BODIES THAT EXCHANGE HEAT WITH THE SUBSTRATE
The invention relates to a process for thermally treating at least one substrate (7) or for depositing a plurality of layers on at least one substrate (7) in a process chamber (8) of a CVD reactor (1), wherein a number of process steps are carried out one after the other at different temperatures, total gas pressures and/or flow rates, wherein, during at least a first process step, the process chamber (8) contains at least a first body (3, 4, 5) which, on account of its position in the process chamber (8), its outer shape or its characteristics, influences the result of the treatment or the growth of the layer deposited in a process step. In each of the number of process steps, the body influences the temperature profile of the surface of the substrate differently. To avoid this disadvantage, the invention provides that a number of such bodies, each optimized for one of the process steps, are used and are exchanged between the process steps.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/54 - Apparatus specially adapted for continuous coating
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
66.
Device and method for controlling the ceiling temperature of a CVD reactor
A CVD reactor may include a susceptor, process chamber and heat dissipation body. In the CVD reactor, one or more layers can be deposited on one or more substrates. The susceptor is heated by a heating devices. Heat is transported from susceptor, through a process chamber towards the process chamber ceiling, through the process chamber ceiling, and from the process chamber ceiling through a gap space to the heat dissipation body. The temperature of the process chamber ceiling is measured at at least two different azimuth angle positions about a central axis of the process chamber. The radial distance of the respective measurement points or zones from the central axis of the process chamber may be equal to one another. The at least two temperature measurement values are used to produce an average value or a difference value.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/52 - Controlling or regulating the coating process
67.
METHOD FOR ASCERTAINING THE END OF A CLEANING PROCESS FOR A PROCESS CHAMBER OF A MOCVD REACTOR
The invention relates to a method for removing parasitic depositions on surfaces of a process chamber (6) of a CVD reactor, in particular an MOCVD reactor. A susceptor (2) of the CVD reactor is heated by a heating device (5), and the susceptor (2) is regulated to a specified temperature (T) or is heated with a constant heat output. At the same time, an etching gas is supplied to the heated process chamber (6). The thermal response of at least one object (2, 3, 7, 8, 11) is monitored, wherein the thermal response is the temperature (T) of the wide face of a process chamber cover (7), said wide face facing away from the process chamber (6). The parasitic depositions influence the emissivity of the surface of the process chamber cover (7), said emissivity influencing the temperature distribution in the region of the process chamber (6). The supply of etching gas is terminated when the temperature (T) reaches a comparison value (Tv), said temperature changing on the basis of the surface emissivity that changes during the cleaning process.
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
The invention relates to a CVD reactor comprising a susceptor (2) that can be rotationally driven about an axis of rotation (A) by a rotary drive (24), comprising first broadside surface (2') pointing towards a process chamber (4), on which a plurality of storage locations (22) for receiving the substrates (21) to be treated are arranged about the axis of rotation (A), comprising a second broadside surface (2'') pointing away from the first broadside surface, which is opposite a heating device (8) for heating the susceptor (2) to a process temperature, and comprising gas outlet openings (10, 15, 18) feeding into a spacing area between the heating device (8) and the second broadside surface (2'') of the susceptor (2) for feeding a temperature-control gas into the spacing area. According to the invention, in order to be able to locally influence the heat transfer between the heating device (8) and the susceptor (2), the gas outlet openings (10, 15, 18) are arranged in the second broadside surface (2'') of the susceptor (2) and at least one of the gas outlet openings (10, 15, 18) is spatially assigned to each storage location (22).
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C30B 25/10 - Heating of the reaction chamber or the substrate
69.
ARRANGEMENT FOR MEASURING THE SURFACE TEMPERATURE OF A SUSCEPTOR IN A CVD REACTOR
A cover plate, for a CVD reactor, has a circumferential edge extending on a circular arc line, or a plurality of identically configured cover plates can be arranged in a circle such that their respective outer edges extending along circular arcs complement each other to form a complete circle. Storage spaces for substrates or substrate holders supporting substrates are located within the surface of the cover plate. The cover plate has openings which tunnel through the cover plate, and through which the upper side of a susceptor is visible, so that an optical temperature measurement can be carried out through the respective openings.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/52 - Controlling or regulating the coating process
70.
Cover plate for covering the susceptor side facing the process chamber of a device for depositing SiC layers
A device for depositing layers on flat substrates includes a susceptor which can be heated by a heating device. The substrates and cover plates enclosing same are arranged on an upper face of the susceptor facing a process chamber. The cover plates include inner cover plates, each of which forms an edge adjoining a substrate edge facing the center of the susceptor. The inner cover plates are arranged about the center of the susceptor in the circumferential direction, and adjacent ones of the inner cover plates adjoin each other at a separation joint. The separation joint is arranged at an angle α to a line which extends through the center of the susceptor and the center of one of the substrates in a radial direction.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
71.
CVD REACTOR WITH CARRYING RING FOR SUBSTRATE HANDLING, AND USE OF A CARRYING RING ON A CVD REACTOR
A susceptor assembly, which is situated in a reactor housing, has at least one wide side plane that faces a process chamber, at least one pocket, and a carrying element that lies in the at least one pocket, for carrying and handling a substrate. An upper face of the carrying element is adjacent to a limiting face of a recess in which the substrate is arranged. A section of the limiting face which runs along a cylinder inner lateral face merges into the upper face of the carrying element, forming a rounded edge or chamfer. To reduce the growth of parasitic deposits on an inner edge of the carrying element, the section of the limiting face which runs along the cylinder inner lateral face has a height which is greater than the material thickness of the substrate, and the radius of the rounded edge is greater than 0.4 mm.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The invention relates to an apparatus wherein a gas inlet element (5), a susceptor delimiting a process chamber (8) at the bottom, a heating device (6) heating the susceptor (2), and a process chamber ceiling (7) delimiting the process chamber (8) at the top are arranged in a reactor housing (1), wherein the susceptor (2) forms a substrate bearing zone (S) for receiving a substrate (4) to be coated and a flow zone plate (10) lies on a region of the susceptor (2) arranged between the gas inlet element (5) and the substrate bearing zone (S) such that a free space (12, 13) remains between the top side (2') of the susceptor (2) and the bottom side (10') of the flow zone plate (10), in which free space an additional plate (11) is located. The invention further relates to a method for depositing III-V semiconductor layers. In order to maintain the parameters that influence the wavelengths of optoelectronic components in a tight tolerance range, the invention proposes a doubled flow zone plate (10, 11), such that the temperature of the flow zone is 10 to 40°C lower than the substrate temperature.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
73.
CVD REACTOR AND METHOD FOR CONTROLLING THE SURFACE TEMPERATURE OF THE SUBSTRATES
The invention relates to a CVD reactor and a method for the open-loop/closed-loop control of the surface temperature of substrates arranged therein, lying on substrate-retaining elements (3), which are supported, for example, by a dynamic gas cushion (7), wherein actual values (Tn) of the surface temperatures associated with a respective substrate-retaining element (3) are successively measured and the surface temperatures are controlled in a closed-loop manner to a common value by varying the height of the gas cushion (7). According to the invention, after each measurement of a measured actual value (Tn) of the surface temperature associated with a substrate-retaining element (3) using only the respective last-measured actual value (Tn) of the surface temperatures of each substrate-retaining element (3), a first average value (MT) is calculated, a difference value (dTn) associated with the substrate-retaining element (3) is calculated by forming a difference between the actual value (tn) measured during the measurement and the first average value (MT), and an approximate actual value (Tn') is calculated for each of the other substrate-retaining elements (3) by adding the associated difference value (dTn) to the first average value (MT), said approximate actual value being used for the open-loop/closed-loop control.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
74.
Device for coating a substrate with a carbon-containing coating
In a device for depositing graphene, carbon nano-tubes or other, in particular carbon-contained coatings on a strip-shaped substrate, the substrate enters a reactor housing through an inlet opening and is transported in a transport direction through a process area that is tempered by a tempering device, before being exiting the reactor housing through an outlet opening. Heat-transport-inhibiting means are arranged between the process area and the inlet opening and/or the outlet opening by means of which a heat transport from the process area to the inlet opening or the outlet opening is reduced. Guide elements are also provided in order to guide the substrate into and out of regions directly adjacent to the inlet and outlet openings.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/52 - Controlling or regulating the coating process
C23C 16/54 - Apparatus specially adapted for continuous coating
The invention relates to a gas distribution device having a plurality of gas inlet regions (E1 to E5) which are arranged above each other and can be adjusted by switching on, switching off or switching over one or more feed conduits (18) through which process gases can be fed into gas distribution volumes (17), arranged above each other at several levels, of gas outlet zones (Z1 to Z12), and through each gas inlet region (E1 to E5) in each case only one uniform process gas can exit into a process chamber (7).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The invention relates to a gas-inlet element (1) for a CVD reactor with a cylindrical main body (8), which together with an outer wall (10), which surrounds at least one gas distribution chamber (13), forms a gas outlet face (11), into which a plurality of gas outlet openings (12) originating in the gas distribution chamber (13, 14, 15) open out. A cooling device having a plurality of cooling ducts (7) running adjacently but separately in the outer wall (10) is provided, the gas outlet openings (12) extending between the cooling channels (7).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
B23K 26/50 - Working by transmitting the laser beam through or within the workpiece
77.
USE OF A CVD REACTOR FOR DEPOSITING TWO-DIMENSIONAL LAYERS
The invention relates a method for depositing a two-dimensional layer onto a substrate in a CVD reactor (1), in which a process gas is fed by means of a feed line (10) into a gas-inlet member (2), which has gas-outlet openings (14, 24) which open out into a process chamber (3), in which the process gas in the process chamber (3) or the decomposition products thereof are brought to a surface of the substrate (4), and in which the substrate (4) is brought to a process temperature (TP) by means of a heating device (6) such that, after a chemical reaction of the process gas, the two-dimensional layer forms on the surface. According to the invention, during the heating up or after the heating up of the substrate (4) to the process temperature (TP), initially a first gas flow (Q1) of the process gas, with which there is no layer growth on the surface of the substrate (4), is fed into the process chamber (3) and then, while the substrate surface is being observed, the gas flow of the process gas is increased for as long as it takes to obtain a second gas flow (Q2), with which the layer growth begins, and subsequently the gas flow of the process gas is increased by a predetermined value to a third gas flow (Q3), with which the layer is deposited. The beginning of the layer growth is identified by observing the progression over time of a measurement curve (26) of a pyrometer.
C23C 16/52 - Controlling or regulating the coating process
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
pp) by means of a heating device. According to the invention, to deposit heterostructures, in a first step, an inert gas or a diluent gas is fed into the first gas distribution chamber (11) and a reactive gas containing the elements of a first two-dimensional coating is fed into the second gas distribution chamber, which reactive gas is pyrolytically decomposed in the process chamber (3), wherein the decomposition products form the two-dimensional first coating, and that in a second step, a second coating is deposited above and/or adjacent to the first coating, wherein a diluent gas is fed into the second gas distribution chamber (21) and a reactive gas containing the elements of a second two-dimensional coating is fed into the first gas distribution chamber (11), which reactive gas or which gas mixture is decomposed in the process chamber (3), wherein the decomposition products form the second two-dimensional coating.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
79.
APPARATUS AND METHOD FOR DEPOSITING CARBON-CONTAINING STRUCTURES
The invention relates to an apparatus for depositing carbon-containing structures on a substrate (2) conveyed through an interior space of a housing (1), wherein the interior space of the housing has a central zone (5) arranged between a first peripheral zone (3) and a second peripheral zone (4), wherein the substrate (2) enters the housing (1) through a first opening (6), which is assigned to the first peripheral zone (3), passes through the central zone (5) in a conveying direction (F) and leaves the housing (1) through a second opening (7), which is assigned to the second peripheral zone (4), having a gas inlet (8), which is intended for feeding a carbon-containing process gas into the housing (1), having a heating device (9), which is intended for thermally activating the process gas, and having a gas outlet (16), which can be connected to a pump (10) and is intended for leading out the gas fed into the interior space of the housing (1). According to the invention, means for the controlled entry of a reactive gas into the peripheral zone (3, 4) are provided. Also provided is a gas-outlet opening (20), through which a gas that reacts with oxygen can be fed into the apparatus. The gas that reacts with oxygen is intended to be preheated by a heating device (9), wherein the heating device (9) is arranged partly in the central region (5).
C01B 32/186 - Preparation by chemical vapour deposition [CVD]
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/54 - Apparatus specially adapted for continuous coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The invention relates to a gas outlet element for use in a CVD reactor, comprising an annular upper part (11) with gas outlet openings (7) arranged about a circular surface. A base surface (18) of the upper part (11), said surface extending parallel to the circular surface, sits on a lower part (12) which forms a gas collecting channel (8). A process chamber wall (17) is first integrally formed on the upper part (11), wherein the process chamber wall has a shoulder (19) at the upper end of the process chamber wall, said shoulder projecting beyond the gas outlet openings (7) at least in some regions radially inwards with respect to a direction (S) parallel to a central axis (A) of the circular surface, and the gas outlet opening (7) axis (B) sections pointing upwards are inclined towards the axis (A). Furthermore, the upper part (11) forms a first slot wall (15) and the lower part (12) forms a second slot wall (16), which runs parallel to the first slot wall (15), of a slot (14), which is open in the direction of the axis (A) of the circular surface, for receiving an edge of a plate (10).
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
81.
Device and method for obtaining information about layers deposited in a CVD method
Information about a process for depositing at least one layer on a substrate in a process chamber is obtained via a method including the step of storing actuation data and sensor values as raw data in a log file, together with their time reference. Knowledge about the quality of the deposited layer is obtained by using the raw data. For this purpose, process parameters are obtained from the raw data by means of a computing apparatus. The beginning and the end of the process steps for processing the substrate and their respective types are identified by analyzing the time curve of the process parameters. For at least some of the process steps, characteristic process step quantities corresponding to the particular type of the process steps are calculated from the measured values, and the obtained process step quantities are compared with comparison quantities associated with one or more similar process steps.
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/52 - Controlling or regulating the coating process
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G05B 19/4155 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by programme execution, i.e. part programme or machine function execution, e.g. selection of a programme
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/66 - Testing or measuring during manufacture or treatment
C23C 16/54 - Apparatus specially adapted for continuous coating
The invention relates to a device for treating one or more substrates (19), comprising: one or more process modules (3, 3', 3''), which each have a process chamber (20) for receiving a susceptor (10); a transfer module (2), which has a gripping element (9) for gripping a susceptor (10); a storage module (21), which has a plurality of coolable storage places (5); a loading and unloading lock (4), through which a susceptor (10) can be brought into a handling volume (22) of the transfer module (2) from outside; and a loading module (1), in which the one or more substrates (19) can be loaded onto and unloaded from susceptors (10). In order to arrange the modules in a space-saving manner, according to the invention, the loading module (1), the loading and unloading lock (4) and the storage module (21) are arranged one vertically above the other.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/54 - Apparatus specially adapted for continuous coating
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
83.
COMPONENT COATED WITH MULTIPLE TWO-DIMENSIONAL LAYERS, AND COATING METHOD
A permanently curved component consists of a coated substrate. The substrate is deformable, and the coating consists of multiple layers which are deposited one over another and each of which has layer elements lying adjacent to one another on a plane. The layer elements from adjacent layers are weakly connected together such that the layer elements can move relative to each other upon deforming the coated substrate. In order to produce such a component, the layer elements which lie one over another and which can consist of graphene are first deposited, and then the coated component is deformed such that a closed layer remains.
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
84.
Device for connecting a susceptor to a drive shaft
A device is provided to fasten a susceptor of a CVD reactor to a drive shaft, and by the device, the susceptor can be set into rotation. The device includes one or more of a base plate, a support plate, adjusting levers, and a flange element. The drive shaft carries the base plate, to which the support plate, which carries the susceptor, is fastened. The inclination of the support plate relative to the base plate can be adjusted by the adjusting levers. The support plate is connected to the flange element by a screw. A through opening aligned with the screw is closed with a plug.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The invention relates to a gas distributor having a gas supply line (2), which connects the flow of a plurality of gas outlet lines (3, 3', 3"). A first mass flow of a gas supplied into the gas supply line (2) is divided among the plurality of gas outlet lines (3, 3', 3") such that a second mass flow of the gas flows through at least two of the gas outlet lines (3, 3', 3"). In order to ensure that the mass flow ratio does not change in the event of a change in total pressure, the gas outlet lines (3, 3', 3") have throttle elements (4, 4', 4"), wherein the throttle elements (4, 4', 4") have one or more identically designed throttle channels (5), the flow surface of which is smaller than the flow surface of the associated gas outlet line (3, 3', 3"). The invention furthermore relates to a CVD reactor (10) and a method for supplying flushing gases to a CVD reactor (10).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
F15D 1/02 - Influencing the flow of fluids in pipes or conduits
The invention relates to a gas-outlet area (16) of a gas-inlet element (2) for a CVD reactor (1) or a shielding plate (14) for a gas-inlet element (2), which has a multiplicity of gas-outlet openings (7, 17) arranged around a centre (10), wherein the centre points (8') of the gas-outlet openings (7, 17) lie at the corner points (8') of polygonal, identically formed cells (8) having a geometrical centre point (9), wherein the positioning and the length of the edges (8'') of the cells (8) are defined by crossing reference lines (13, 13, 13', 13''), the reference lines (13, 13', 13'') are assigned to at least two families of lines, and the reference lines respectively of a family of lines extend in a straight line and parallel to one another over the entire gas-outlet area. According to the invention, the centre (10) is at a distance from the corner point (8') equivalent to one third ± 10 percent of the length of the edge.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
87.
CVD device component provided with an individual identifier, and method for communicating information
Information is communicated to a process control device by performing a process that includes the step of heating a component, the component having structured volumetric regions. When the component is heated, structures present in the volumetric regions radiate in the infrared spectrum, allowing the structures to be distinguished by an infrared sensor. The structures, formed by elevations or depressions, form a machine-readable identifier, which can be used as an originality identification means for the component. Since the identifier can be determined in situ during a heating process, the process control device can recognize whether correction values are to be used for the thermal treatment of a substrate.
C23C 16/52 - Controlling or regulating the coating process
G06K 19/06 - Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
88.
METHOD FOR CALIBRATING/VERIFYING MASS FLOW MEASUREMENT/CONTROL UNITS OF A GAS MIXING SYSTEM, AND APPARATUS FOR CARRYING OUT THE METHOD
The invention relates to a method for calibrating/checking mass flow measurement/control units (21, 31, 41, 51, 61) which are permanently arranged in a gas mixing system of a substrate treatment device, in which method a calibrating unit (2, 2', 2a, 2b, 2c) designed as a gas flow measuring unit is connected in terms of a gas flow to the mass flow measurement/control unit (21, 31, 41, 51, 61) that is to be calibrated/checked, in such a way that at least a partial flow of the gas flow flowing through the calibrating unit (2, 2', 2a, 2b, 2c) flows through the mass flow measurement/control unit (21, 31, 41, 51, 61) that is to be calibrated/checked. For a refinement which is advantageous with regard to use, in particular in order to allow fully automatic calibration/checking of multiple and in particular all mass flow measurement/control units of a gas mixing system, it is proposed that the calibrating unit (2, 2', 2a, 2b, 2c) is, with regard to the gas flow, arranged permanently upstream of the mass flow measurement/control unit (21, 31, 41, 51, 61) that is to be calibrated. The invention furthermore relates to an apparatus for carrying out the method and to an apparatus for the thermal treatment of a substrate with a gas mixing system.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
G01F 25/00 - Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
The invention relates to a ceiling panel of a CVD reactor or to a CVD reactor having a ceiling panel (2) of this kind. The ceiling panel (2) is a flat component (2) having a first broad side (4) which can face the process chamber (3), and having a second broad side (5) which faces away therefrom. The component has an inner region (6) and an outer region (7) which is spaced apart therefrom. The second broad side (5) has one or more fastening elements (8) which each have a fastening shoulder (9) that can be engaged from underneath. It is essential that the first broad side surface (4) has a closed surface at the points at which the second broad side surface has a fastening element (8) on the opposite side. It is also essential that the one or more fastening elements (8) are spaced apart from the outer region (7) toward a center in such a way that the fastening elements (8), when installed in a CVD reactor, are arranged vertically above a process chamber floor surface (11) formed by a susceptor (20).
C30B 25/08 - Reaction chambersSelection of materials therefor
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
90.
APPARATUS AND METHOD FOR DETERMINING AND ADJUSTING THE INCLINED POSITION OF A SUSCEPTOR
The invention relates to a method for balancing a radial run-out of a susceptor (3), which is rotatingly driven about a rotation axis (5) during use thereof in a process chamber (2) of a substrate treatment reactor under substrate treatment conditions at an increased temperature achieved by heating the susceptor (3) by means of a heating device (4), having a sensor arrangement, fixedly arranged in a housing (1) of the substrate treatment reactor, for determining at least one component of the distance to the susceptor (3), which component is parallel to the rotation axis (5), wherein adjusting elements (6, 7) are provided in order to adjust an inclined position (11) of a broad-side surface (3") of the susceptor (3) relative to the rotation axis. According to the invention, the distance is determined under process treatment conditions, that is, in particular at temperatures over 500 °C. In the device used for this purpose, the measuring section (13) of the sensor arrangement (8, 9) extends through a heating device (4).
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/52 - Controlling or regulating the coating process
G01B 11/14 - Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
91.
ELECTRODE FOR A LITHIUM ACCUMULATOR AND METHOD FOR PRODUCTION THEREOF
The invention relates to a method for producing an electrode or a lithium-ion accumulator and to such an electrode. The electrode (12, 12') has an electrically conductive substrate (1) on the surface of which bundled nano-filaments (2) are arranged. An ion-receiving configuration (6) has an elastic protection layer (7) according to the invention. Intermediate spaces between the bundles (4) are filled with a filling made of graphite. The protection layer (7) is permeable to Li+ions but impermeable to an electrolyte.
The invention relates to a method for depositing a semiconductor layer system, wherein a first layer sequence has layers containing gallium and a second layer sequence has layers containing indium. In order to prevent gallium from being incorporated from residues in the process chamber into the layer containing indium when the layers containing indium are deposited, according to the invention a reactive gas containing indium is additionally supplied to the process chamber (2) during the first process step and the first process parameters (2) are adjusted such that the first layer or layer sequence (11) contains no indium or such that, in an intermediate step between the first and second process steps, a reactive gas containing indium is supplied to the process chamber (2) and in doing so the process parameters are adjusted such that no indium is deposited on the substrate (4), and, in the second process step, the second process parameters are adjusted such that the second layer contains no gallium.
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C30B 25/10 - Heating of the reaction chamber or the substrate
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
93.
METHOD FOR CONDITIONING A SUBSTRATE TREATMENT MEANS AND A DEVICE THEREFOR
The invention relates to a method for preparing a substrate treatment plant, in which, in at least one conditioning step prior to a substrate treatment process in a process chamber (28), a reactive gas is introduced into a volume (1) of the reactor, which gas reacts with a component of the ambient air to form a solid body adhering to a surface (7.1, 7.2, 7.3) of the volume (1) and a gaseous reaction product. According to the invention, before the reactive gas is fed in, the volume (1) is flooded with ambient air and the reactive gas is fed into the volume after evacuation of the volume (1). A hydride or an organometallic compound can be used as the reactive gas.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
94.
Closure element for closing a loading opening of an inner housing of a CVD reactor
A CVD reactor includes a gas-tight and evacuatable reactor housing and an inner housing arranged therein. The inner housing has means for the infeed of a process gas and means for holding a substrate for treatment in the inner housing by means of the process gases. The inner housing also has a loading opening which can be closed off by a sealing element of a closure element. In its closure position, the closure element bears with an encircling sealing zone against a counterpart sealing zone which encircles the loading opening on the outer side of the inner housing. The sealing element is fastened to a carrier as to be adjustable in terms of inclination and/or pivotally movable about at least one spatial axis (X, Y, Z) and/or so as to be elastically deflectable in the direction of one of the spatial axes (X, Y, Z).
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
F16K 3/18 - Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing facesPackings therefor with special arrangements for separating the sealing faces or for pressing them together by movement of the closure members
F16K 3/314 - Forms or constructions of slidesAttachment of the slide to the spindle
The invention relates to a device (1) for heating a susceptor of a CVD reactor (10).Three heating faces (2) of substantially equal size are arranged around a centre (Z).The heating faces (2) are formed by electrically conductive heating elements (3) which extend in a serpentine manner in a plane to form limbs (4) running next to one another.The essential feature is that the limbs (4) have limb sections (5) which run parallel to delimiting lines (a, b, c) which run along the boundaries, extending in the radial direction, between two heating faces (2). A heating zone arrangement of this type is surrounded by a circular second heating arrangement.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 14/54 - Controlling or regulating the coating process
C30B 25/10 - Heating of the reaction chamber or the substrate
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H05B 3/26 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
96.
METHOD FOR RECORDING A STATE OF A CVD REACTOR UNDER PRODUCTION CONDITIONS
The invention relates to a method for operating a CVD reactor (1) having a process chamber (3), in which, during a process in one or more process steps (R1, R2, R3) of a process phase (PR), in which a substrate (2) is located in the process chamber (3), a process temperature (T) and a pressure (P) are each set and a process gas flow (Q) is fed into the process chamber (3) by way of control data delivered by a controller (10) in accordance with a formula stored in the controller (10), wherein, during the process, sensors are used to determine measurement data from which a current "fingerprint" is calculated, which is compared with a historic "fingerprint" determined in the same way in one or more older processes. According to the invention, it is proposed for the "fingerprint" to comprise only values or groups of values that are obtained from measured values that are recorded during one or more conditioning steps (C1.1, C1.2, C1.3) of a conditioning phase (PC, PC') in which a conditioning temperature (T) and a conditioning pressure (P) are each set and a conditioning gas flow (Q) is fed into the process chamber (3) in accordance with control data delivered by the formula.
C23C 16/52 - Controlling or regulating the coating process
C23C 16/54 - Apparatus specially adapted for continuous coating
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The invention relates to a susceptor arrangement for use in a CVD reactor (1) comprising a circular or annular susceptor (2) with a first susceptor broad side (3), on which a substrate holder (4) and at least one covering element (5, 15) are arranged. According to the invention, it is proposed that at least one covering element (5, 15) consists of multiple covering plates (6, 16, 36), wherein a lowermost covering plate (6) is adjacent to the first broad side face (3) of the susceptor (2), and an uppermost covering plate (7, 17) covers the lowermost covering plate at least in certain regions and forms a free broad side face (14) of the susceptor arrangement. The covering plates (6, 7) are preferably produced from silicon carbide. They are connected to one another by positioning elements (8).
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The invention relates to a device and a method for the thermal treatment of substrates using a susceptor (5), which can be heated with a heater (13) and driven in rotation about a rotation axis (A) by a rotary drive (20), to hold the at least one substrate.Means (14, 14'; 15, 16) are provided to influence the heat transfer to or from the susceptor (5) in a locally limited manner synchronized with the rotary movement of the susceptor (5) to equalize local temperature differences on the rotating susceptor (5).In particular, a temperature control gas with changing heat conduction properties is periodically fed in a periodically pulsed manner through a feed opening (14') into a gap (10) between the susceptor (5) and a cooling unit (30).
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The invention relates to an apparatus for use in a CVD reactor (1), having a substrate holder (10) having at least three support protrusions (13) arising from a broadside face (12), which have support faces (14) lying in a common plane and having a circle-equivalent first diameter (D1) and which are arranged such that a central zone (Z) of a substrate (17), which is surrounded by an edge zone (R) supported on the support faces (14), has a distance (a) from the broadside face (12). According to the invention, the support protrusions (13) can be arranged directly on the edge of the broadside face (12) or in an edge strip having a radial extension of 600 μm. The support protrusions (13) can furthermore be multilevel.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
100.
METHOD FOR DEPOSITING A HETEROSTRUCTURE, AND HETEROSTRUCTURE DEPOSITED ACCORDING TO THE METHOD
The invention relates to a method for depositing a heterostructure made of monocrystalline layers in particular. A plurality of layer pairs, which consist of a first layer (A) and an in particular thicker second layer (B) and which are strained laterally under tension or compression on the basis of different lattice constants of the first and second layer (A, B), are deposited onto a nucleation layer (N), in the form of a buffer layer, which is applied onto a substrate (S), such that the strain on the second layer (B) decreases as the number of layer pairs increases as a result of a relaxation. In order to counteract the relaxation of the second layer (B), an intermediate layer (C) which counter strains the second layer (B) is deposited after at least five layer pairs, wherein the intermediate layer is at least five times as thick as the first layer (A), and the strain on the intermediate layer decreases as the layer thickness increases as a result of a relaxation.
