Abstract

A device for detecting neutrons includes at least one common module, where a number of solid state sensors are assembled. The sensors are configured in the module side by side and/or stacked in a layered structure. At least one of the sensors includes neutron reactive material as a neutron converter for interacting with neutrons incident thereon to be detected and to release ionizing radiation reaction products responsive to interactions with the incident neutrons. The neutron converters are coupled with corresponding semiconductor elements so that the semiconductor elements interact with the ionizing radiation reaction products for providing electrical charges in proportion to the energy of the ionizing radiation reaction products. The semiconductor elements are configured with electrodes for providing charge collection areas for collecting the electrical charges and to provide electrically readable signals proportional to the collected electrical charges.

IPC Classes  ?

• G01T 3/08 - Measuring neutron radiation with semiconductor detectors
• G01T 3/06 - Measuring neutron radiation with scintillation detectors

Abstract

A device for detecting neutrons comprises at least one common module, where a number of solid state sensors are assembled. The sensors are configured in the module side by side and/or stacked in a layered structure. At least one of the sensors comprises neutron reactive material as a neutron converter for interacting with neutrons incident thereon to be detected and to release ionizing radiation reaction products responsive to interactions with said incident neutrons. The neutron converters are coupled with corresponding semiconductor elements so that the semiconductor elements interact with said ionizing radiation reaction products for providing electrical charges in proportion to the energy of said ionizing radiation reaction products. The semiconductor elements are configured with electrodes for providing charge collection areas for collecting said electrical charges and to provide electrically readable signals proportional to said collected electrical charges.

IPC Classes  ?

• G01T 3/08 - Measuring neutron radiation with semiconductor detectors

Abstract

A detector (100) for detecting neutrons comprises a neutron reactive material (102) adapted to interact with neutrons to be detected and release ionizing radiation reaction products in relation to said interactions with neutrons. The detector also comprises a first semiconductor element (101) being coupled with said neutron reactive material (102) and adapted to interact with said ionizing radiation reaction products and provide electrical charges proportional to the energy of said ionizing radiation reaction products. In addition electrodes are arranged in connection with said first semiconductor element (101) for providing charge collecting areas (106) for collecting the electrical charges and to provide electrically readable signal proportional to said collected electrical charges. The thickness of the first semiconductor element (101) is adapted to be electrically and/or physically so thin that it is essentially/practically transparent for incident photons, such as background gamma photons.

IPC Classes  ?

• G01T 3/08 - Measuring neutron radiation with semiconductor detectors
• H01L 31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
• H01L 31/118 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors

Abstract

A detector (100) for detecting neutrons comprises a neutron reactive material (102) adapted to interact with neutrons to be detected and release ionizing radiation reaction products in relation to said interactions with neutrons. The detector also comprises a first semiconductor element (101) being coupled with said neutron reactive material (102) and adapted to interact with said ionizing radiation reaction products and provide electrical charges proportional to the energy of said ionizing radiation reaction products. In addition electrodes are arranged in connection with said first semiconductor element (101) for providing charge collecting areas (106) for collecting the electrical charges and to provide electrically readable signal proportional to said collected electrical charges. In the detector (100) the neutron reactive material is arranged so that the incident neutrons to be detected interact with the neutron reactive material (102) essentially in the portion nearest to said charge collecting areas (106, 110) provided by the electrodes in said first semiconductor element (101) to which said neutron reactive material is coupled with.

IPC Classes  ?

• G01T 3/08 - Measuring neutron radiation with semiconductor detectors
• H01L 31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
• H01L 31/118 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors

Abstract

A radiation detector is disclosed. The detector has an entrance opening etched through a low-resistivity volume of silicon, a sensitive volume of high-resistivity silicon for converting the radiation particles into detectable charges, and a passivation layer between the low and high-resistivity silicon layers. The detector also has electrodes built in the form of vertical channels for collecting the charges generated in the sensitive volume, and read-out electronics for generating signals based on the collected charges.

IPC Classes  ?

• G01T 1/24 - Measuring radiation intensity with semiconductor detectors
• H01L 31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation