Clamping device (1200) and method (4000) for a conveyor system (2000) for conveying a sheet (100), comprising a clamping device (1200) for gripping an edge (101, 102) of the sheet, the clamping device comprising a first jaw member (1210) comprising a first clamping surface (1210F) and a second jaw member (1220) comprising a second clamping surface (1220F) facing, on its front side, the first clamping surface, wherein one or more of the first clamping surface and the second clamping surface comprises one or more pad (1210P, 1220P), characterized in that the pad comprises one or more layer (1210L, 1220L) comprising graphite.
A photovoltaic apparatus (1000) is provided including a front sheet (250) having a first portion (2501) and a second portion (2502). The photovoltaic apparatus further includes a back sheet (210) having a first portion (2101), a second portion (2102), and a first folded portion (2103), where the second portion of the front sheet is disposed between the second portion of the back sheet and the first folded portion of the back sheet. The photovoltaic apparatus further includes one or more photovoltaic devices (100) disposed between the first portion of the front sheet and the first portion of the back sheet, where each of the one or more photovoltaic devices includes an array of photovoltaic cells (105).
H02S 40/34 - Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H02S 40/36 - Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
Embodiments of the present disclosure generally relate to flexible photovoltaic modules that include a multi-layered substrate. In some embodiments, the multi-layered substrate includes one or more layers that are configured to improve the elastic modulus, rigidity, or stiffness of a flexible substrate of a flexible photovoltaic module during a deposition process step at an elevated temperature that is used to form the flexible photovoltaic module. The one or more layers of the multi-layered substrate may also provide improved barrier properties that prevent environmental contaminants from affecting the performance of a formed photovoltaic module, which includes the multi-layered substrate, during normal operation.
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
C23C 14/20 - Metallic material, boron or silicon on organic substrates
A photovoltaic apparatus is provided including a first photovoltaic module and a second photovoltaic module. Each photovoltaic module includes a front sheet having an outer portion and an inner portion. The outer portion is disposed around a core to form a keder. Each photovoltaic module further includes a back sheet and a photovoltaic device disposed between the front sheet and the back sheet. Each photovoltaic device includes an array of photovoltaic cells.
H01L 31/046 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
EMPA EIDGENÖSSISCHE MATERIALPRÜFUNGS- UND FORSCHUNGSANSTALT (Switzerland)
Inventor
Torres Sevilla, Galo
Romanyuk, Yaroslav
Tiwari, Ayodhya Nath
Loeckinger, Johannes
Perrenoud, Julian Christoph
Abstract
A method (4000) for forming a thin-film photovoltaic device (100) comprising a cell stack (2R) comprising a chemically-reduced surface (11R), the cell stack (2R) comprising a semiconductive absorber layer (130) sandwiched between a back-contact layer (120) and a window layer (155), comprising: providing a thin-film photovoltaic device (100) comprising one or more cell stacks (2) comprising an absorber layer (130) sandwiched between a back-contact layer (120) and a window layer (155), wherein one or more side faces (11) of the absorber layer (130) is bare; and subjecting the one or more side faces (11) to a chemical reduction step (4100); wherein the chemical reduction step (4100) causes the one or more side faces (11) to be chemically reduced into one or more reduced side faces (11R). A thin-film photovoltaic device (100) wherein one or more side faces of the absorber layer (130) is a chemically-reduced side face (11R).
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/046 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate
A photovoltaic apparatus is provided including a back sheet and a photovoltaic device disposed over the back sheet. The photovoltaic device includes an array of photovoltaic cells extending in a first direction; and a plurality of serial interconnects having a length that extends in a second direction, wherein each serial interconnect is disposed between and electrically connects consecutive photovoltaic cells of the array. The photovoltaic apparatus further includes a front sheet disposed over the photovoltaic device, the front sheet having a plurality of structures, wherein each structure has one or more edges aligned with one of the serial interconnects.
H01L 31/0465 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
B32B 37/26 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer which influences the bonding during the laminating process, e.g. release layers or pressure equalising layers
B32B 38/00 - Ancillary operations in connection with laminating processes
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/042 - PV modules or arrays of single PV cells
A method for fabricating thin-film optoelectronic devices (100), the method comprising: providing a alkali-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding least one and advantageously at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said alkali metals comprise Rb and/or Cs and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding alkali metals are, for Rb and/or Cs, in the range of 500 to 10000 ppm and, for the other alkali metals, typically Na or K, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of Rb and/or Cs. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/0445 - PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
8.
Self-assembly patterning for fabricating thin-film devices
A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235) comprising Cs and/or Rb; controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/042 - PV modules or arrays of single PV cells
09 - Scientific and electric apparatus and instruments
11 - Environmental control apparatus
42 - Scientific, technological and industrial services, research and design
Goods & Services
Photovoltaic solar modules; Photovoltaic cells; Photovoltaic installations for generating electricity [photovoltaic power plants]; Accumulators for photovoltaic power; Photovoltaic apparatus for generating electricity. Solar powered lamps; Solar powered torches; Solar powered ventilation apparatus; Solar energy powered heating installations. Science and technology services; Drafting and development of photovoltaic systems; Engineering research; Engineering services in the field of energy technology; Engineering services for the design of machinery; Engineering services relating to the design of electronic systems.
10.
Fabricating thin-film optoelectronic devices with modified surface
A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
H01L 31/0445 - PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
A deposition system is provided for guiding a flexible substrate along a deposition path. The deposition system includes a payout hub for unwinding the flexible substrate; a pickup hub for winding the flexible substrate; one or more evaporation sources (300); one or more electrodes (510) spaced apart from the one or more evaporation sources in a first direction; one or more measurement devices (550); and a controller (601) configured to adjust one or more voltages provided to the one more electrodes.
B05C 5/02 - Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work from an outlet device in contact, or almost in contact, with the work
A photovoltaic apparatus (1000) is provided including a front sheet (250) having a first portion (2501) and a second portion (2502). The photovoltaic apparatus further includes a back sheet (210) having a first portion (2101), a second portion (2102), and a first folded portion (2103), where the second portion of the front sheet is disposed between the second portion of the back sheet and the first folded portion of the back sheet. The photovoltaic apparatus further includes one or more photovoltaic devices (100) disposed between the first portion of the front sheet and the first portion of the back sheet, where each of the one or more photovoltaic devices includes an array of photovoltaic cells (105).
H02S 40/34 - Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H02S 40/36 - Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
A photovoltaic apparatus is provided including a first portion having a first surface facing a first direction; a second portion located in a different position in the first direction from the first portion; and a third portion located in a different position in the first direction from the first portion; a front sheet and a back sheet each extending at least partially through each of the first portion, the second portion, and the third portion. The photovoltaic apparatus further includes a first rigid folded portion connecting the first portion to the second portion, the first rigid folded portion including portions of the front sheet and the back sheet; and a second rigid folded portion connecting the first portion to the third portion, the second rigid folded portion including portions of the front sheet and the back sheet.
H02S 40/36 - Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235) comprising Cs and/or Rb; controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/042 - PV modules or arrays of single PV cells
15.
Fabricating thin-film optoelectronic devices with added rubidium and/or cesium
A method for fabricating thin-film optoelectronic devices (100), the method comprising: providing a alkali-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding least one and advantageously at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said alkali metals comprise Rb and/or Cs and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding alkali metals are, for Rb and/or Cs, in the range of 500 to 10000 ppm and, for the other alkali metals, typically Na or K, in the range of 5 to 2000 ppm and at most 1/2 and at least 1/2000 of the comprised amount of Rb and/or Cs. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/0445 - PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
Embodiments of the present disclosure generally relate to an apparatus and method of forming a photovoltaic module assembly that contains a plurality of interconnected photovoltaic modules that are used to generate an amount of power when exposed to electromagnetic radiation. The formed photovoltaic module assembly will generally include two or more photovoltaic modules that can generate and deliver power to an external grid, external network or external device. The photovoltaic module assembly can be a stand alone power generating device or be disposed within an array of interconnected photovoltaic devices.
H01L 31/046 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H02S 40/36 - Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
H01L 31/042 - PV modules or arrays of single PV cells
A61B 90/70 - Cleaning devices specially adapted for surgical instruments
A61B 1/00 - Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopesIlluminating arrangements therefor
A61B 1/12 - Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopesIlluminating arrangements therefor with cooling or rinsing arrangements
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
G02B 23/24 - Instruments for viewing the inside of hollow bodies, e.g. fibrescopes
A photovoltaic apparatus (200) is provided including a back sheet (210) and a photovoltaic device (100) disposed over the back sheet. The photovoltaic device includes an array of photovoltaic cells (101-104) extending in a first direction; and a plurality of serial interconnects (191) having a length that extends in a second direction, wherein each serial interconnect is disposed between and electrically connects consecutive photovoltaic cells of the array. The photovoltaic apparatus further includes a front sheet (250) disposed over the photovoltaic device, the front sheet having a plurality of structures (220), wherein each structure has one or more edges (221) aligned with one of the serial interconnects.
H01L 31/0465 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
H01L 31/042 - PV modules or arrays of single PV cells
B32B 37/26 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer which influences the bonding during the laminating process, e.g. release layers or pressure equalising layers
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Embodiments of the present disclosure generally relate to evaporation sources used for physical vapor deposition of material onto substrates and more particularly for controlled coating of large substrates, such as vacuum deposition of copper, indium, gallium, selenium, tellurium, cadmium, or zinc on flexible substrates. Embodiments disclosed herein are able to control the evaporation rate of the source material during processing so as to obtain a uniform deposition across the width of the substrate as the complete length of a roll-to-roll substrate is moved past the evaporation source during processing.
A modular demountable low-temperature high-output linear evaporation source (100) for depositing a semi-metal source material (75), in particular Se, on a substrate (50), the evaporation source comprising: a crucible (201) comprising: a base (203); a first plurality of walls (202) surrounding an interior region (204) of the crucible (201), the plurality of walls (202) including a first end wall (2021), a second end wall (2022), opposite to the first end wall (2021), a first side wall (2023), and a second side wall (2024) opposite to the first side wall (2023); a supporting ridge (210) extending inwardly towards the interior region (204) from at least two of the first plurality of walls (202); and a lid (400) disposed on the supporting ridge (210), the lid comprising two or more adjacently positioned sheets (404), wherein each sheet (404) comprises a plurality of openings (402) formed therethrough, and the plurality of openings (402) in each sheet are not aligned with the plurality of openings (402) formed in an adjacently positioned sheet (404).
A modular demountable low-temperature high-output linear evaporation source (100) for depositing a semi-metal source material (75), in particular Se, on a substrate (50), the evaporation source comprising: a crucible (201) comprising: a base (203); a first plurality of walls (202) surrounding an interior region (204) of the crucible (201), the plurality of walls (202) including a first end wall (2021), a second end wall (2022) opposite to the first end wall 2021), a first side wall (2023), and a second side wall 2024) opposite to the first side wall 2023); a thermal isolation assembly (500) disposed around the walls (202) of the crucible (201), the thermal isolation assembly (500) comprising: a second plurality of walls (502) spaced apart from the walls (202) of the crucible (201), wherein one or more of the walls (502) of the thermal isolation assembly (500) includes an outer surface (523) having one or more grooves (522), wherein the outer surface (523) faces away from the interior region (204) of the crucible (201); and a second cooling tube (520) disposed in the one or more grooves (522) of the outer surface (523).
A modular demountable low-temperature high-output linear evaporation source (100) for depositing a semi-metal source material (75), in particular Se, on a substrate (50), the evaporation source comprising: a crucible (201) comprising: a base (203); a first plurality of walls (202) surrounding an interior region (204) of the crucible (201), the plurality of walls (202) including a first end wall (2021), a second end wall (2022) opposite to the first end wall (2021), a first side wall (2023), and a second side wall (2024) opposite to the first side wall (2023); a cooling assembly (600) comprising: a cooling plate (602) disposed below the base (203) of the crucible (201), the cooling plate (602) having a lower surface (606) including one or more grooves (608); and a first cooling tube (604) disposed in the one or more grooves (608) of the lower surface (606).
A modular demountable low-temperature high-output linear evaporation source (100) for depositing a semi-metal source material (75), in particular Se, on a substrate (50), the evaporation source comprising: a crucible (201) comprising: a base (203); a first plurality of walls (202) surrounding an interior region (204) of the crucible (201), the plurality of walls (202) including a first end wall (2021),a second end wall (2022) opposite to the first end wall (2021), a first side wall (2023), and a second side wall (2024) opposite to the first side wall (2023); a heat shield assembly (700) that comprises: a frame (740) a plurality of side wall portions (710) disposed around and spaced apart from the thermal isolation assembly (500), each side wall portion (710) folded over the frame (740) and including an outer section (711) disposed outside of the frame (740), an inner section (712) disposed inside the frame (740) and a ledge (714) extending inwardly from a bottom (718) of the outer section (711); a lid portion (730) disposed on the side wall portions (710); and a base portion (720) disposed on the ledge (714) of the side walls portions (710).
Embodiments of the disclosure generally relate to evaporation sources used for physical vapor deposition of material onto substrates and more particularly for controlled coating of large substrates, such as vacuum deposition of selenium on flexible substrates. In one embodiment an evaporation source for depositing a source material on a substrate is provided. The evaporation source includes a crucible having a base and a first plurality of walls surrounding an interior region of the crucible. The crucible further includes a supporting ridge extending inwardly towards the interior region. The evaporation source further includes a lid disposed on the supporting ridge, the lid including two or more adjacently positioned sheets, where each sheet includes a plurality of openings formed therethrough, and the plurality of openings in each sheet are not aligned with the plurality of openings formed in an adjacently positioned sheet.
A modular demountable low-temperature high-output linear evaporation source (100) for depositing a source material (75) on a substrate (50), the evaporation source comprising: a crucible (201) comprising: a base (203); a first plurality of walls (202) surrounding an interior region (204) of the crucible (201), the plurality of walls (202) including a first end wall (2021), a second end wall (2022), opposite to the first end wall (2021), a first side wall (2023), and a second side wall (2024) opposite to the first side wall (2023); a thermal distributor (300) disposed in the interior region (204) of the crucible (201), wherein the thermal distributor (300) comprises: a plurality of first portions (310) extending in a first horizontal direction and spaced apart in a second horizontal direction perpendicular to the first horizontal direction; and a plurality of second portions (320) extending in the second horizontal direction and spaced apart in the first horizontal direction, wherein a spacing between the second portions (320) in a first region of the interior (204) is shorter than the spacing between the second portions in a second region, wherein the first region is closer to one of the end walls (2021) (2022) than the second region is to one of the end walls (2021) (2022).
A modular demountable low-temperature high-output linear evaporation source (100) for depositing a semi-metal source material (75), in particular Se, on a substrate (50), the evaporation source comprising: a crucible (201) comprising: a base (203); a first plurality of walls (202) surrounding an interior region (204) of the crucible (201), the plurality of walls (202) including a first end wall (2021), a second end wall (2022) opposite to the first end wall (2021), a first side wall (2023), and a second side wall (2024) opposite to the first side wall (2023); a leg assembly (800) providing support, adjustment and positioning and comprising a plurality of legs (810) and a plurality of feet (820) that are used to level and vertically position the evaporation source (100) relative to the substrate (50) and thermally isolate the evaporation source (100) from portions of the vapor deposition system (10), each leg (810) comprising an upper element (811) and a lower element (812) that are attached and relatively movable to each other in a controlled and regulated way.
A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistance than that of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100). The device (100) and design method are advantageous to reduce costs and materials to manufacture thin-film optoelectronic module devices (100) while increasing production yield, reliability, aesthetic appearance, and range of applications.
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/0465 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
27.
LINEAR SOURCE FOR VAPOR DEPOSITION WITH AT LEAST THREE ELECTRICAL HEATING ELEMENTS
Along high-temperature high-output linear evaporation source apparatus (200) for vapor deposition applications comprises at least one elongated horizontal crucible (50) for containing material (55) to be melted and evaporated, and a heater assembly (100) comprising at least three electrical heating elements (10, 20, 30). Each electrical heating element (10, 20, 30) is supplied by electrical lines arranged to enable independent regulation of said heating elements. At least one of the heating elements (10) constitutes a principal heating element that is positioned inside the volume of the crucible (50), and extends along and parallel to the longest centerline of the crucible (50), above the level of material (55) to be evaporated. At least one further heating element (20, 30) is positioned inside or outside the crucible (50) at each end of the longest centerline of the crucible (50) and at each end of said principal heating element (20). This enables a more even spatial distribution of the deposited material with less energy expense and the possibility to regulate an evaporation profile.
A long high-temperature high-output linear evaporation source apparatus (200) for vapor deposition applications comprises at least one elongated horizontal crucible (50) for containing material (55) to be melted and evaporated, and a heater assembly (100) comprising a principal heating element (10) that is positioned inside the volume of the crucible (50) and extends along and parallel to the longest centerline of the crucible (50), above the level of material (55) to be evaporated, and positioned so that there is no line of sight from outside the evaporation source apparatus (200) to the material to be evaporated (55) through the nozzles (65), said line of sight being obstructed by the heater assembly (100), and said nozzles (65) being arranged with a set spatial distribution of nozzles and/or nozzle aperture distribution so as to produce a set deposition profile (510, 520). This enables to achieve a more even spatial distribution of the deposited material with less energy expense and the possibility to regulate an evaporation profile.
A long high-temperature high-output linear evaporation source apparatus (200) for atomic vapor deposition of metal atoms suited for the production of CIGS thin films, comprising at least one elongated horizontal crucible (50) for containing, up to a given level in the crucible (50), material (55) to be melted and evaporated, comprising a heater assembly (100), comprising at least one nozzle (65) on a face of the apparatus that is parallel to the longest centerline of the crucible (50), said at least one nozzle (65) having a flux-wise axis that is oriented at between +30 degrees and +150 degrees with respect to the plane supporting the base of at least one nozzle (65), so as to direct the evaporated flux in a predetermined direction. This enables to achieve a more even spatial distribution of the deposited material with less energy expense and the possibility to regulate an evaporation profile.
A long high-temperature high-output linear evaporation source apparatus (200) for atomic vapor deposition of metal atoms suited for the production of CIGS thin films, comprising at least one elongated horizontal crucible (50) for containing, up to a given level in the crucible (50), material (55) to be melted and evaporated, comprising a heater assembly (100) and at least a nozzle (65), comprising at least one heat shield assembly (80, 90) that at least partially surrounds the crucible (50) and comprises at least one shielding layer (83, 93) made of graphite or carbon foam or felt, so as to reduce radiation of heat away from the linear evaporation source (200). This enables to achieve a more even spatial distribution of the deposited material with less energy expense and the possibility to regulate an evaporation profile.
A roll-to roll vapor deposition system (800) suited for the deposition of thin CIGS films on a thin web (830) comprising a vacuum deposition chamber (810) enclosing at least three sets (822, 823, 824) of evaporation sources, each set comprising at least three evaporation source apparatuses, whereby web (830), for example made of polymer or metal foil, departs a pay-off roll (841) and gets coated by said evaporation sources sets (822, 823, 824) as it travels between tensioning rolls (851, 852, 853, 854) until it gets rolled-up by take-up roll (842), and whereby said at least three evaporation source apparatuses are long high-temperature high-output linear evaporation source apparatuses (200) for atomic vapor deposition of metal atoms suited for the production of CIGS thin films. This enables to achieve a more even spatial distribution of the deposited material with less energy expense and the possibility to regulate an evaporation profile.
A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium. The method (200) and apparatus (300) are advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
A deposition system is provided for guiding a flexible substrate along a deposition path. The deposition system includes a payout hub for unwinding the flexible substrate; a pickup hub for winding the flexible substrate; one or more evaporation sources (300); one or more electrodes (510) spaced apart from the one or more evaporation sources in a first direction; one or more measurement devices (550); and a controller (601) configured to adjust one or more voltages provided to the one more electrodes.
A method of depositing a semiconductor film on a flexible substrate (450), the method comprising conveying the flexible substrate (450) between a payout hub (110) and a pickup hub (210); applying an initial voltage to a first electrode (5101) spaced apart from the flexible substrate (450) in a first direction (z), wherein the flexible substrate (450) is disposed between a first evaporation source (3001) and the first electrode (5101); directing deposition material from the first evaporation source (3001) towards the flexible substrate (450) to deposit a first layer onto a first surface (450A) of the flexible substrate (450); and measuring a property of the first layer deposited on the flexible substrate (450).
A linear evaporation source (100) suited for the production of CIGS thin films for depositing a metal or semi-metal source material (75) on a substrate (50), the evaporation source (100) comprising: a crucible (201) comprising: a base (203); a plurality of walls (202) surrounding an interior region (204) of the crucible (201), the plurality of walls including a first end wall (202) spaced apart from a second end wall (2022) in a first direction (Y), wherein the interior region (204) includes a first outer region (2041), a second outer region (2042) and a central region (2043), the central region (2043) disposed between the first outer region (2041) and the second outer region (2042); and each of the first outer region (2041), the second outer region (2042), and the central region (2043) has a same width in the first direction (Y); and a first heater (230H) disposed in the base (203), the first heater (230H) configured to provide heat at a higher rate to the first outer region (2041) than to the central region (2043).
A photovoltaic apparatus (1000) is provided including a front sheet (250) having a first portion (2501) and a second portion (2502). The photovoltaic apparatus further includes a back sheet (210) having a first portion (2101), a second portion (2102), and a first folded portion (2103), where the second portion of the front sheet is disposed between the second portion of the back sheet and the first folded portion of the back sheet. The photovoltaic apparatus further includes one or more photovoltaic devices (100) disposed between the first portion of the front sheet and the first portion of the back sheet, where each of the one or more photovoltaic devices includes an array of photovoltaic cells (105).
H02S 20/23 - Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures
H02S 40/36 - Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
A photovoltaic apparatus is provided including a first portion having a first surface facing a first direction; a second portion located in a different position in the first direction from the first portion; and a third portion located in a different position in the first direction from the first portion; a front sheet and a back sheet each extending at least partially through each of the first portion, the second portion, and the third portion. The photovoltaic apparatus further includes a first rigid folded portion connecting the first portion to the second portion, the first rigid folded portion including portions of the front sheet and the back sheet; and a second rigid folded portion connecting the first portion to the third portion, the second rigid folded portion including portions of the front sheet and the back sheet.
H02S 40/36 - Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
38.
FLEXIBLE PHOTOVOLTAIC APPARATUS WITH MULTI-LAYERED SUBSTRATE
Embodiments of the present disclosure generally relate to flexible photovoltaic modules that include a multi-layered substrate. In some embodiments, the multi-layered substrate includes one or more layers that are configured to improve the elastic modulus, rigidity, or stiffness of a flexible substrate of a flexible photovoltaic module during a deposition process step at an elevated temperature that is used to form the flexible photovoltaic module. The one or more layers of the multi-layered substrate may also provide improved barrier properties that prevent environmental contaminants from affecting the performance of a formed photovoltaic module, which includes the multi-layered substrate, during normal operation.
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
A method for fabricating thin-film optoelectronic devices (100), the method comprising: providing a alkali-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding least one and advantageously at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said alkali metals comprise Rb and/or Cs and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding alkali metals are, for Rb and/or Cs, in the range of 500 to 10000 ppm and, for the other alkali metals, typically Na or K, in the range of 5 to 2000 ppm and at most 1/2 and at least 1/2000 of the comprised amount of Rb and/or Cs. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235) comprising Cs and/or Rb; controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).
A method (200) of fabricating thin-film photovoltaic cells devices (100) with a roll-to-roll manufacturing apparatus at high speed, the method comprising the steps: (i) providing an alkali-nondiffusing substrate (210, 110) delivered between a delivery roll and a take-up roll of a roll-to-roll manufacturing apparatus; (ii) forming a back-contact layer (220, 120); (iii) forming at least one absorber layer (230, 130), which absorber layer is made of an ABC chalcogenide material, including ABC chalcogenide material ternary, quaternary, pentanary, or multinary variations, wherein A represents elements of group 11 of the periodic table of chemical elements as defined by the International Union of Pure and Applied Chemistry including Cu and Ag, B represents elements in group 13 of the periodic table including In, Ga, and Al, and C represents elements in group 16 of the periodic table including S, Se, and Te; (iv) adding at least one and preferably at least two different alkali metals in elemental form or precursor thereof, the alkali metal(s) being added from a source external to the alkali- nondiffusing substrate (210,110); and (v) forming at least one front-contact layer (250, 150); wherein said at least one alkali metal(s) comprises Rb and/or Cs The method (200) isadvantageous for more environmentally-friendly production of photovoltaic devices on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
A thin-film photovoltaic device (100), comprising: a flexible substrate (110); at least one layer (130) comprising Cu(ln,Ga)Se2; a plurality of embossings (1300, 1305) at the surface of said at least one layer, at least a portion of the plurality of embossings resulting from self-assembly of a plurality of alkali crystal compounds (1320) from at least one alkali metal comprising Cs and/or Rb; the self-assembled alkali crystal compounds (1320) being embedded into the surface of the at least one layer, thereby forming at least a first line (1340) of regularly spaced embossings (1300, 1305) that is adjacent and parallel to at least a second line (1340) of regularly spaced embossings (1300, 1305) within at least one region (135) of the at least one layer.
A photovoltaic apparatus is provided including a first photovoltaic module and a second photovoltaic module. Each photovoltaic module includes a front sheet having an outer portion and an inner portion. The outer portion is disposed around a core to form a keder. Each photovoltaic module further includes a back sheet and a photovoltaic device disposed between the front sheet and the back sheet. Each photovoltaic device includes an array of photovoltaic cells.
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
A flexible photovoltaic apparatus is provided including a photovoltaic device that includes an array of photovoltaic cells having a first end and a second end. The array extends in a first direction from the first end to the second end. The photovoltaic apparatus further includes a first fabric that includes an insulating fabric, a first conductor disposed in the insulating fabric and connected to the first end of the array, and a second conductor disposed in the insulating fabric and connected to the second end of the array.
H02S 40/36 - Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
Embodiments of the present disclosure generally relate to an apparatus and method of forming a photovoltaic module assembly that contains a plurality of interconnected photovoltaic modules that are used to generate an amount of power when exposed to electromagnetic radiation. The formed photovoltaic module assembly will generally include two or more photovoltaic modules that can generate and deliver power to an external grid, external network or external device. The photovoltaic module assembly can be a stand alone power generating device or be disposed within an array of interconnected photovoltaic devices.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/046 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate
H02S 40/36 - Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
H01L 31/042 - PV modules or arrays of single PV cells
A photovoltaic apparatus (200) is provided including a back sheet (210) and a photovoltaic device (100) disposed over the back sheet. The photovoltaic device includes an array of photovoltaic cells (101-104) extending in a first direction; and a plurality of serial interconnects (191) having a length that extends in a second direction, wherein each serial interconnect is disposed between and electrically connects consecutive photovoltaic cells of the array. The photovoltaic apparatus further includes a front sheet (250) disposed over the photovoltaic device, the front sheet having a plurality of structures (220), wherein each structure has one or more edges (221) aligned with one of the serial interconnects.
H01L 31/042 - PV modules or arrays of single PV cells
B32B 37/26 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer which influences the bonding during the laminating process, e.g. release layers or pressure equalising layers
A photovoltaic apparatus (200) is provided including a photovoltaic device (100). The photovoltaic device includes an array of photovoltaic cells (101-114) having a first end and a second end, the array extending in a first direction from the first end (1101) to the second end (1102). Each photovoltaic cell includes a first contact layer (150), a second contact layer (120), and an absorber layer (130) disposed between the first contact layer and the second contact layer. The photovoltaic apparatus further includes a first busbar (180) extending from a first side of the photovoltaic device to a second side of the photovoltaic device in a second direction. The first busbar includes a plurality of strands (1851) that are intertwined to form a flexible electrically conductive structure.
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
H01L 31/0465 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
A photovoltaic assembly with integrated mounting structure is disclosed, which comprises a back sheet (300) made of a single sheet and accommodating at least one solar module in a central portion (303) of the back sheet (300), wherein the back sheet (300) comprises a first lateral portion (301) and a second lateral portion (302) extending along two opposite sides of the central portion (303) and forming a predetermined angle with respect to the central portion, wherein the first and second lateral portions (301, 302) respectively comprise a first base portion (301b) and a second base portion (302b) adapted to lay on a roof surface. The back sheet (300) is therefore both a supporting sheet for the solar modules and a mounting structure in a single body.
H02S 20/24 - Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures specially adapted for flat roofs
H02S 20/10 - Supporting structures directly fixed to the ground
49.
Fabricating thin-film optoelectronic devices with modified surface
A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/0445 - PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
Embodiments of the present disclosure generally relate to seals for thin-film photovoltaic apparatuses, and more particularly to waterproof seals for the electrical conductors routed into thin-film photovoltaic apparatuses. A photovoltaic apparatus is provided including a front sheet; a back sheet having a first opening; a photovoltaic device disposed between the front sheet and the back sheet; and a first assembly sealing the first opening. The first assembly includes a first layer formed over the first opening of the back sheet; a second layer formed over the first layer; and a barrier layer formed over the second layer. The photovoltaic apparatus further includes one or more conductors extending through the first opening of the back sheet, the one or more conductors electrically coupled to the photovoltaic device.
A deposition system for guiding a flexible substrate along a path is provided. The deposition system includes a first frame having a first sidewall and a second sidewall separated from each other in a first direction, a payout hub coupled to the first sidewall and the second sidewall, and having a rotational axis extending in the first direction, a first roller positioned apart from the payout hub in a second direction, where a length of the substrate extends in the second direction from the payout hub to the first roller during processing, a first sensor located a first distance in the second direction from the payout hub, a second sensor located a second distance in the second direction from the payout hub, and a first actuator, coupled to the payout hub, the first actuator operable to adjust a position of the payout hub in the first direction.
G05B 19/402 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by control arrangements for positioning, e.g. centring a tool relative to a hole in the workpiece, additional detection means to correct position
G05B 19/404 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by control arrangements for compensation, e.g. for backlash, overshoot, tool offset, tool wear, temperature, machine construction errors, load, inertia
C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
C23C 16/54 - Apparatus specially adapted for continuous coating
B65H 23/032 - Controlling transverse register of web
Embodiments of the present disclosure generally relate to evaporation sources used for physical vapor deposition of material onto substrates and more particularly for controlled coating of large substrates, such as vacuum deposition of copper, indium, gallium, selenium, tellurium, cadmium, or zinc on flexible substrates. Embodiments disclosed herein are able to control the evaporation rate of the source material during processing so as to obtain a uniform deposition across the width of the substrate as the complete length of a roll-to-roll substrate is moved past the evaporation source during processing.
Embodiments of the disclosure generally relate to evaporation sources used for physical vapor deposition of material onto substrates and more particularly for controlled coating of large substrates, such as vacuum deposition of selenium on flexible substrates. In one embodiment an evaporation source for depositing a source material on a substrate is provided. The evaporation source includes a crucible having a base and a first plurality of walls surrounding an interior region of the crucible. The crucible further includes a supporting ridge extending inwardly towards the interior region. The evaporation source further includes a lid disposed on the supporting ridge, the lid including two or more adjacently positioned sheets, where each sheet includes a plurality of openings formed therethrough, and the plurality of openings in each sheet are not aligned with the plurality of openings formed in an adjacently positioned sheet.
Embodiments of the disclosure provided herein generally include an apparatus and method of depositing a layer on a substrate in a processing system by use of a physical vapor deposition technique. Embodiments of the disclosure provided herein also relate to linear evaporation sources used for vapor deposition of material onto substrates and more particularly for controlled material coating of large substrates, such as vacuum deposition on roll-to-roll substrates. The apparatus and methods disclosed herein include the use of a material flux controlled evaporation source (120) that is disposed within the processing region of a processing system. The material flux controlled evaporation source generally includes a material flux regulation device (float 180) that is configured to control a flux of an evaporated material from the evaporation source and improve the temperature uniformity within the evaporation source.
The present disclosure generally relates to a photovoltaic device, and method of forming the same that has an improved manufacturing device yield and desirable electrical properties based one or more patterning techniques performed during the photovoltaic device manufacturing process. The patterning techniques include forming one or more scribed regions in a formed or partially formed photovoltaic device to inhibit the migration of cracks or defects to undesirable regions of the formed photovoltaic device and/or reduce or relieve an amount of stress found in the layers used to form the photovoltaic device.
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/046 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate
56.
Method for thin-film via segments in photovoltaic device
A method for vias and monolithic interconnects in thin-film optoelectronic devices (100, 200) wherein at least one line segment via hole (163, 165, 165′, 167) is formed by laser drilling and passes through front-contact layers (150, 152, 154, 156, 158) and semiconductive active layer (130), and wherein laser drilling causes forming a CIGS-type wall (132, 134, 136, 138) of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface (135) of the via hole, thereby forming a conductive path between at least a portion of front-contact and a portion of back-contact layers (120, 124, 126, 128, 129), forming a bump-shaped raised portion (155) at the surface of the front-contact layer, forming a raised portion (125, 127, 127′) of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy (155′) covering a portion of the front-contact layer (150). A thin-film CIGS device comprises at least one line segment via hole obtainable by the method.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
Embodiments of the disclosure provide methods and apparatus for a feedthrough. In one embodiment, a feedthrough includes a gland body having an opening formed therethrough along a longitudinal axis thereof, the gland body being adapted to mate with a threaded opening formed in a wall body at a first surface thereof, and a, seal device disposed between the gland body and a second surface of the wall body, wherein the seal device comprises a bushing having a tapered outside diameter that contacts a tapered surface of the gland body, a washer having a first surface that contacts a surface of the bushing, and a ring seal contacting a second surface of the washer and an internal surface of the wall body.
A photovoltaic apparatus is provided including a front sheet, a back sheet, and a photovoltaic device disposed between the front sheet and the back sheet. The photovoltaic device includes a first photovoltaic cell and a second photovoltaic cell separated in a first direction. The photovoltaic device further includes a first serial interconnect having a length that extends in a second direction. The first serial interconnect is disposed between the first photovoltaic cell from the second photovoltaic cell. The first photovoltaic cell and the second photovoltaic cell are electrically connected in series by the first interconnect. The photovoltaic apparatus further includes a spacing layer including a first roving disposed between the first interconnect and the back sheet. The first roving has a length that is aligned with the length of first serial interconnect.
Embodiments of the present disclosure provide an apparatus and method of forming a sub-module retaining assembly that is used to support and store multiple photovoltaic sub-module assemblies during different stages of a photovoltaic module formation process. Embodiments of the present disclosure may further provide an apparatus and method for supporting and positioning a sub-module retaining assembly such that sub-modules can be transferred from or positioned within the sub-module retaining assembly during different phases of the photovoltaic module formation process.
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
A computer-controlled apparatus (1100, 2000) for laser scribing at least one line segment via hole (163, 165, 165', 167) in a thin-film device (200) wherein the apparatus comprising at least one laser source (1110, 1120), at least one mirror (1150, 1151) to form at least one laser spot (7200, 7300, 7400, 7500, 7600, 7700) on the first side of said device, at least one actuator (1115, 1116, 1125, 1126, 1130, 1150, 1151,2140,2150,2260,2265,2280,2285) configured to move at least one laser spot for laser scribing the thin-film device (200) along at least one direction (101, 102), at least one optical sensor (1146, 1160) configured to acquire imaging data, and at least one control system (6000) for processing imaging data, the control system executing image processing instructions (6140, 6146, 6147) for measuring in the imaging data, along a direction (103) that is orthogonal to at least one direction of laser scribing (101, 102): the width of a curl-up (1345) of the back-contact layer (120, 124, 126, 128, 129) and the width of a lip (1355) of conductive alloy resulting from a permanent change in the chemical composition of the semiconductive optoelectronically active layer where the line segment via hole is drilled.
B23K 26/402 - Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
61.
SELF-ASSEMBLY PATTERNING FOR FABRICATING THIN-FILM DEVICES
A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235); controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).
A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
63.
Fabricating thin-film optoelectronic devices with added potassium
A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium. The method (200) and apparatus (300) are advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
H01L 31/0336 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A method for vias and monolithic interconnects in thin-film optoelectronic devices (100, 200) wherein at least one line segment via hole (163, 165, 165', 167) is formed by laser drilling and passes through front-contact layers (150, 152, 154, 156, 158) and semiconductive active layer (130), and wherein laser drilling causes forming a CIGS-type wall (132, 134, 136, 138) of elec¬ trically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface (135) of the via hole, thereby forming a conductive path between at least a portion of front-contact and a portion of back-contact layers (120, 124, 126, 128, 129), forming a bump-shaped raised portion (155) at the surface of the front-contact layer, forming a raised portion (125, 127, 127') of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy (155') covering a portion of the front-contact layer (150). A thin-film CIGS device comprises at least one line segment via hole obtainable by the method.
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
65.
Thin-film photovoltaic device with wavy monolithic interconnects
A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistance than that of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100). The device (100) and design method are advantageous to reduce costs and materials to manufacture thin-film optoelectronic module devices (100) while increasing production yield, reliability, aesthetic appearance, and range of applications.
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/0465 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most 1/2 and at least 1/2000 of the comprised amount of potassium. The method (200) and apparatus (300) are advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/0256 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by the material
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
A method for manufacturing a compound film comprising a substrate and at least one additional layer is disclosed. The method comprising the steps of depositing at least two chemical elements on the substrate and/or on the at least one additional layer using depositions sources, maintaining depositing of the at least two chemical elements while the substrate and the deposition sources are being moved relative to each other, measuring the compound film properties, particularly being compound film thickness, compound-film overall composition, and compound-film composition in one or several positions of the compound film, comparing the predefined values for the compound film properties to the measured compound film properties, and adjusting the deposition of the at least two chemical elements in case the measured compound film properties do not match the predefined compound film properties.
A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically- interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistivity than th at of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100). The device (100) and design method are advantageous to reduce costs and materials to manufacture thin-film optoelectronic module devices (100) while increasing production yield, reliability, aesthetic appearance, and range of applications.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/042 - PV modules or arrays of single PV cells
70.
Method and apparatus for thin film module with dotted interconnects and vias
A method to fabricate monolithically-integrated optoelectronic module apparatuses (100) comprising at least two series-interconnected optoelectronic components (104, 106, 108). The method includes deposition and scribing on an insulating substrate or superstate (110) of a 3-layer stack in order (a, b, c) or (c, b, a) comprising: (a) back-contact electrodes (122, 124, 126, 128), (b) semiconductive layer (130), and (c) front-contact components (152, 154, 156, 158). Via holes (153, 155, 157) are drilled so that heat of the drilling process causes a metallization at the surface of said via holes that renders conductive the semi-conductive layer's surface (132, 134, 136, 138) of said via holes, thereby establishing series-interconnecting electrical paths between optoelectronic components (104, 106, 108) by connecting first front-contact components (154, 156) to second back-contact electrodes (124, 126).
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
71.
THIN-FILM PHOTOVOLTAIC DEVICE AND FABRICATION METHOD
A method to fabricate thin-film photovoltaic devices (100) comprising a photovoltaic Cu(In,Ga)Se2 or equivalent ABC absorber layer (130), such as an ABC2 layer, deposited onto a back-contact layer (120) characterized in that said method comprises at least five deposition steps, wherein the pair of third and fourth steps are sequentially repeatable, in the presence of at least one C element over one or more steps. In the first step at least one B element is deposited, followed in the second by deposition of A and B elements at a deposition rate ratio Ar/Br, in the third at a ratio Ar/Br lower than the previous, in the fourth at a ratio Ar/Br higher than the previous, and in the fifth depositing only B elements to achieve a final ratio A/B of total deposited elements. The resulting photovoltaic devices are characterized in that, starting from the light-exposed side, the absorber layer (130) of the photovoltaic devices (100) comprises a first region (501) of decreasing Ga / (Ga + In) ratio, followed by a second region (502) of increasing Ga / (Ga + In) ratio where over the light- exposed half side of the second region (502) the value of Ga / (Ga + In) increases by less than 0.15 and contains at least one hump.
A method to fabricate monolithically-integrated optoelectronic module apparatuses (100) comprising at least two series-interconnected optoelectronic components (104, 106, 108). The method includes deposition and scribing on an insulating substrate or superstrate (1 10) of a 3-layer stack in order (a, b, c) or (c, b, a) comprising: (a) back-contact electrodes (122, 124, 126, 128), (b) semiconductive layer (130), and (c) front-contact components (152, 154, 156, 158). Via holes (153, 155, 157) are drilled so that heat of the drilling process causes a metallization at the surface of said via holes that renders conductive the semiconductive layer's surface (132, 134, 136, 138) of said via holes, thereby establishing series-interconnecting electrical paths between optoelectronic components (104, 106, 108) by connecting first front-contact components (154, 156) to second back-contact electrodes (124, 126).
A method and apparatus to fabricate monolithically-integrated photovoltaic modules (1, 50) comprising forming and patterning a film layer (90) into electrically interconnectable area sections (9, 11, 14, 16, 18, 21). The patterning scheme exploits the film layer's spatial properties distribution such as its material percentage composition and/or structure and/or thickness, so as to provide at least two of said area sections (9, 11, 14, 16, 18, 21) with substantially differing compositional and/or structural properties such that at least two components, each comprising at least one of said area sections (9, 11, 14, 16, 18, 21), are provided with substantially differing current-voltage characteristics. The components may comprise interconnected photovoltaic cells with requirement-matched photovoltaic properties and/or monolithically integrated bypass diodes and/or resistors. The invention also relates to a photovoltaic module (1, 50) comprising at least one of these components.
A method for manufacturing a compound film comprising a substrate and at least one additional layer is disclosed. The method comprising the steps of depositing at least two chemical elements on the substrate and/or on the at least one additional layer using depositions sources, maintaining depositing of the at least two chemical elements while the substrate and the deposition sources are being moved relative to each other, measuring the compound film properties, particularly being compound film thickness, compound-film overall composition, and compound-film composition in one or several positions of the compound film, comparing the predefined values for the compound film properties to the measured compound film properties, and adjusting the deposition of the at least two chemical elements in case the measured compound film properties do not match the predefined compound film properties.
−5, comprising a laser unit (1) for generating a laser beam on one side of the to-be-processed element (12), an illumination unit (7), an imaging system (10) comprising a sensor unit on the one side of the to-be-processed element (12), the sensor unit recording residual light that results from light of the illumination unit (7), a scanning unit (2) for adjusting the laser beam processing position, and a control unit. The control unit is operatively connected to the laser unit (1), the imaging system (10) and the scanning unit (2), and the illumination unit (7) is positioned on the other side of the to-be-processed element (12) in relation to the laser unit (1). Since the to-be-processed element (12) allows light to pass through an otherwise opaque or almost opaque layer, a good contrast is obtained that is used to determine the position of the laser beam with high precision.
Therefore, high precision laser processing is possible for materials with low transmission for light and low mechanical stability like flexible thin film solar cells.
A method for manufacturing a compound film comprising a substrate (1) and at least one additional layer is disclosed. The compound film satisfies predefined compound film properties, in particular predefined values for compound-film thickness, compound-film overall composition and compositional profile are given, the latter being defined as a compound-film composition as a function of a position on or in the compound film. The method comprising the steps of depositing at least two chemical elements (A, B, C) on the substrate (1) and/or on the at least one additional layer using depositions sources (12), maintaining depositing of the at least two chemical elements (A, B, C) while the substrate (1) and the deposition sources (12) are being moved relative to each other. The invention is characterized by the steps of measuring the compound film properties, particularly being compound film thickness, compound-film overall composition, and compound-film composition in one or several positions of the compound film, by comparing the predefined values for the compound film properties to the measured compound film properties, and by adjusting the deposition of the at least two chemical elements (A, B, C) in case the measure compound film properties do not match the predefined compound film properties.
The present application relates to a method and an apparatus for laser beam processing of an element (12) that has a total transmittance for light of at least 10-5, comprising a laser unit (1) for generating a laser beam on one side of the to-be-processed element (12), an illumination unit (7), an imaging system (10) comprising a sensor unit on the one side of the to-be-processed element (12), the sensor unit recording residual light that results from light of the illumination unit (7), a scanning unit (2) for adjusting the laser beam processing position, and a control unit. The control unit is operatively connected to the laser unit (1), the imaging system (10) and the scanning unit (2), and the illumination unit (7) is positioned on the other side of the to-be-processed element (12) in relation to the laser unit (1). Since the to-be- processed element (12) allows light to pass through an otherwise opaque or almost opaque layer, a good contrast is obtained that is used to determine the position of. the laser beam with high precision.
