An optical apparatus comprising a heat compensating device and a light generating optoelectronic device in thermal communication with each other. The heat compensating device is configured to provide heat compensation for the light generating optoelectronic device. An electrical circuitry provides first electrical signals to the light generating device and second electrical signals to the heat compensating device. The electrical circuitry is configured to adjust at least the second electrical signals to control a temperature of the light generating device. The electrical circuitry can adjust the second electrical signals using a feedback signal indicative of a measured wavelength of light generated by the light generating device. Adjusting the first electrical signals via different paths in a wavelength map can be used to calibrate the electrical circuitry so as to reduce or eliminate thermally induced hysteresis effects when tuning or scanning the wavelength of the light generating device.
A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/06 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
H01S 5/0625 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
A light source generates a high brightness combined light beam by coherently combining a plurality of light beams generated or amplified by an optical array comprising a plurality flared optical gain regions. The plurality of light beams generated or amplified by the optical array can have a common wavelength and can be passively or actively phase locked and coherently combined to generate the combined light beam. The plurality of light beams generated or amplified by the optical array can have different wavelengths and can be spectrally combined to generate the high brightness light beam. The radiance of the high brightness light beam can be greater than the radiance of the individual light beams, and its beam quality can be close to the beam quality of the individual light beams.
H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/04 - Processes or apparatus for excitation, e.g. pumping
H01S 5/062 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
H01S 5/0683 - Stabilisation of laser output parameters by monitoring the optical output parameters
A laser light source comprises a laser array comprising a plurality of semiconductor lasers on a diode bar having bar smile. The laser light source uses angular dispersion to distribute different wavelengths of light from the semiconductor lasers into different directions and a partially reflective surface to retroreflect a portion of the light that is normally incident on the reflective surface back to semiconductor lasers to lower the lasing threshold for those wavelengths. A portion of the light normally incident on the partially reflective surface is transmitted therethrough providing an output of the laser light source having increased collimation despite the diode bar exhibiting bar smile.
Various semiconductor laser and optical amplifier designs and drive current control methods are disclosed that enable spatial and temporal control of a distribution of the injection current in an active optical waveguide of the laser or the optical amplifier. Such configurations can be used to improve the performance the laser or the optical amplifier and the quality of an optical beam output by the laser or the optical amplifier. The electrodes of the laser or the optical amplifier may be segmented to provide controlled drive current distribution in an optical gain layer of the laser or the optical amplifier.
Method and designs for optical systems formed by optically connecting active optical devices mounted on carrier chip in a p-side down configuration to other optical devices using photonic wires are disclosed.
An isolation section that provides thermal isolation between a laser region and an integrated optical element included in a waveguide-based optical device is disclosed. A semiconductor optical amplifier may further be included between the laser region and the integrated optical element. An additional isolation section may be included between the laser region and the semiconductor optical amplifier in certain cases.
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/22 - Structure or shape of the semiconductor body to guide the optical wave having a ridge or a stripe structure
H01S 5/50 - Amplifier structures not provided for in groups
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
Various designs of semiconductor lasers may comprise a waveguide having a front region that is configured to support a plurality of transverse laser cavity modes and a rear region that support only one transverse laser cavity mode. These front and rear regions may be disposed between front and rear reflectors and may provide optical gain. Some such designs may be useful for providing higher power single mode semiconductor lasers.
A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/06 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
H01S 5/0625 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
One example includes an atomic sensor system. The system includes an optical source configured to provide an optical beam and a plurality of sensor cell systems. Each of the sensor cell systems includes sensing media enclosed in a volume therein. The system also includes optics configured to provide the optical beam to each of the sensor cell systems to provide interaction of the optical beam with the vapor in each of the respective sensor cell systems. The optical beam exiting each of the sensor cell systems is a respective detection beam. The system further includes a detection system comprising at least one configured to receive the detection beam from each of the sensor cell systems and to determine a measurable parameter based on an optical characteristic associated with the detection beam from each of the sensor cell systems.
Various semiconductor laser and optical amplifier designs and injection current control methods are disclosed that enable tailoring a distribution of the injection current along an active waveguide of the laser or the optical amplifier. Such configurations can be used to reduce longitudinal current crowding along the active waveguide of the laser or the optical amplifier. The electrodes and/or one or more layers of the laser or the optical amplifier may be segmented to provide a tailored longitudinal injection current distribution.
H01S 5/50 - Amplifier structures not provided for in groups
H01S 5/068 - Stabilisation of laser output parameters
H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
H01S 5/10 - Construction or shape of the optical resonator
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
An optical device is provided that includes an active waveguide having a top electrode and a plurality of layers including a gain layer. Configurations are disclosed for the active waveguide to enable amplification of a guided optical wave profile while preserving a shape of a lateral optical intensity profile of the guided optical wave as the guided optical wave is amplified along the waveguide. The top electrode and/or one or more layers of the active optical waveguide may be tailored to provide a tailored optical gain.
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 3/13 - Stabilisation of laser output parameters, e.g. frequency or amplitude
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01S 5/068 - Stabilisation of laser output parameters
13.
System and method for external wavelength control of optical modulators
Various designs of optical interconnects and optical links may comprise one or more optically resonant electro-optical modulators used to modulate one or more optical carriers received from one or more lasers using one or more electronic input signals. A wavelength of each laser may be dynamically tuned using a control signal generated by a feedback control system to stabilize the electro-optical modulation of the optical carriers.
In various embodiments, a monolithic integrated transmitter, comprising an on-chip laser source and a modulator structure capable of generating advanced modulation format signals based on amplitude and phase modulation are described.
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