Abstract

A vertical high-electron-mobility transistor, HEMT (100), comprising: a substrate (310); a drain contact (410), the drain contact being a metal contact via through said substrate; a pillar layer (500) arranged above the drain contact (410) and comprising at least one vertical pillar (510) and a supporting material (520) laterally enclosing the at least one vertical pillar (510); a heterostructure mesa (600) arranged on the pillar layer (500), the heterostructure mesa (600) comprising an AlGaN-layer (610) and a GaN-layer (620), together forming a heterojunction (630); at least one source contact (420a, 420b) electrically connected to the heterostructure mesa (600); a gate contact (430) arranged on said heterostructure mesa (600), and above the at least one vertical pillar (510); wherein the at least one vertical pillar (510) is forming an electron transport channel between the drain contact (410) and the heterojunction (630).

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 27/095 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
• H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/66 - Types of semiconductor device

Goods & Services

Chemical substances, chemical materials and chemical preparations for industrial use; chemicals for use in the electronics industry; gallium; gallium compounds; gallium nitride.. Machines and machine tools for treatment of materials and for manufacturing; machines, apparatus and instruments for manufacturing semiconductors, semiconductor discs and circuits, circuit boards (printed circuit boards), substrates, computer chips, electrical and electronic components, screens, and parts and fittings for the aforesaid machines and apparatus.. Apparatus and instruments for accumulating and storing electricity; electric-car charger; chargers; electric charging cables; wireless chargers; artificial intelligence apparatus; computers and computer hardware; software; artificial intelligence and machine learning software; artificial intelligence software for vehicles; application software; batteries; batteries for vehicles; chargers for electric batteries; apparatus to charge electric batteries; wireless chargers for batteries; microprocessors; processors [central processing units]; transistors [electronic]; semi-conductors; electrical and electronic components; electronic chips [electronic components]; electronic memory integrated circuit chips; silicon chips; silicon wafers; cards encoded with security features for identification purposes; satellite navigational apparatus; satellite transceivers; gas sensors; telecommunications equipment; devices for telecommunications; light-emitting diodes [LED]; organic light-emitting diodes [OLED]; silicon carbide diodes; electric motor checking [monitoring or supervision] apparatus; loudspeakers; microelectronic components; virtual and augmented reality software; electromechanical software.. Plug-in electric cars; geared electric motors for land vehicles; electric motors for motor cars; electric motors for two-wheeled vehicles; parts and fittings for vehicles.. Repair and maintenance services regarding machines, machine tools, apparatus, systems and instruments for treatment of material and for manufacturing; installation services regarding machines, machine tools, apparatus, systems and instruments for treatment of material and for manufacturing; Vehicle repair, maintenance, refuelling and recharging; vehicle battery charging; charging of electric vehicles.. Telecommunication services; communication services by satellite; communication via computer terminals, by digital transmission or by satellite; provision of communication services by means of computers; communication by hertzian wave. Scientific and industrial research; laboratory services; research and development services in the field of engineering; research in the field of artificial intelligence; design and development of engineering products; development of industrial products; software design and development; design and development of computer hardware; software as a service [SaaS]; designing of electronic systems; design of mechanical, electromechanical and optoelectronic apparatus and instruments; technical consultancy services in the field of semi-conductors, electronics, optoelectronics; testing and quality control services..

Abstract

There is provided a monolithic microwave integrated circuit, MMIC, front-end module which may include: a gallium nitride structure supported by a silicon substrate, a silicon-based transmit/receive switch having a transmit mode and a receive mode, a transmit amplifier configured to amplify an outgoing signal to be transmitted by said MMIC front-end module, wherein said transmit amplifier is electrically connected to said transmit/receive switch, wherein said transmit amplifier comprises a gallium nitride high-electron-mobility transistor, HEMT, formed in said gallium nitride structure. The MMIC front-end module may further include a receive amplifier configured to amplify an incoming signal received by said MMIC front-end module, wherein said receive amplifier is electrically connected to said transmit/receive switch, wherein said receive amplifier may include a gallium nitride HEMT formed in said gallium nitride structure.

IPC Classes  ?

• H03F 3/24 - Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
• H03F 3/195 - High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits

Abstract

A transistor (1) comprising a source (10), a body (12) and a drain (14), the transistor (1) further comprising a plurality of semiconductor layers (20), wherein layers of the plurality of semiconductor layers (20) are made of AlGaN or GaN, and wherein the plurality of semiconductor layers (20) is configured such that an aluminum content changes between each consecutive layer such that every second layer has a lower aluminum content than the neighboring mutually opposite layers thereof, wherein the transistor (1) is either a N-channel metal-oxide-semiconductor, NMOS, transistor (1′), wherein part of the plurality of semiconductor layers (20) is p-doped and forms part of the body (12) of the NMOS transistor (1′); or a P-channel metal-oxide-semiconductor, PMOS, transistor (1″), wherein part of the plurality of semiconductor layers (20) is p-doped and forms part of the source (10) or the drain (14) of the PMOS transistor (1″).

IPC Classes  ?

• H01L 29/201 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/66 - Types of semiconductor device
• H01L 29/775 - Field-effect transistors with one-dimensional charge carrier gas channel, e.g. quantum wire FET
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

Abstract

There is provided an AC-DC converter circuit (100) for high power charging of an electrical battery. The circuit comprises an input rectifier comprising a first node and a second node. The input rectifier (110) is configured to receive an AC voltage at the first node (112) and provide a rectified voltage at the second node (114). The circuit further comprises a first transistor (120), comprising a first gate node (122), a first source node (124), and a first drain node (126). The first drain node is connected to the second node of the input rectifier. The first gate node is connected to a ground node (170). The circuit further comprises a second transistor (130), comprising a second gate node (132), a second source node (134), and a second drain node (136). The second drain node is connected to the first source node. The second transistor materially corresponds to the first transistor. The circuit further comprises a duty cycle control unit (140) connected to the second gate node for providing the second transistor with a switching waveform. The circuit further comprises an output rectifier (150) connected to the second source node or the first source node. The circuit further comprises an output electronic filter (160) connected to the second source node or an output node (151) of the output rectifier. An AC-DC converter device, a method for charging an electrical battery, and a regenerative braking system is also provided.

IPC Classes  ?

• H02M 7/217 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
• B60L 50/60 - Electric propulsion with power supplied within the vehicle using propulsion power supplied by batteries or fuel cells using power supplied by batteries
• B60L 53/24 - Using the vehicle's propulsion converter for charging
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H02J 7/02 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from AC mains by converters
• H02M 1/00 - Details of apparatus for conversion
• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• H02M 7/06 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
• H02M 7/21 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
• H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
• H03K 17/16 - Modifications for eliminating interference voltages or currents

Goods & Services

Chemical substances, chemical materials and chemical preparations for industrial use; chemicals for use in the electronics industry; gallium; gallium compounds; gallium nitride. Machines and machine tools for treatment of materials and for manufacturing; machines, apparatus and instruments for manufacturing semiconductors, semiconductor discs and circuits, circuit boards (printed circuit boards), substrates, computer chips, electrical and electronic components, screens, and parts and fittings for the aforesaid machines and apparatus. Apparatus and instruments for accumulating and storing electricity; electric-car charger; chargers; electric charging cables; wireless chargers; artificial intelligence apparatus; computers and computer hardware; software; artificial intelligence and machine learning software; artificial intelligence software for vehicles; application software; batteries; batteries for vehicles; chargers for electric batteries; apparatus to charge electric batteries; wireless chargers for batteries; microprocessors; processors [central processing units]; transistors [electronic]; semi-conductors; electrical and electronic components; electronic chips [electronic components]; electronic memory integrated circuit chips; silicon chips; silicon wafers; cards encoded with security features for identification purposes; satellite navigational apparatus; satellite transceivers; gas sensors; telecommunications equipment; devices for telecommunications; light-emitting diodes [LED]; organic light-emitting diodes [OLED]; silicon carbide diodes; electric motor checking [monitoring or supervision] apparatus; loudspeakers; microelectronic components; virtual and augmented reality software; electromechanical software. Plug-in electric cars; geared electric motors for land vehicles; electric motors for motor cars; electric motors for two-wheeled vehicles; parts and fittings for vehicles. Repair and maintenance services regarding machines, machine tools, apparatus, systems and instruments for treatment of material and for manufacturing; installation services regarding machines, machine tools, apparatus, systems and instruments for treatment of material and for manufacturing; Vehicle repair, maintenance, refuelling and recharging; vehicle battery charging; charging of electric vehicles. Telecommunication services; communication services by satellite; communication via computer terminals, by digital transmission or by satellite; provision of communication services by means of computers; communication by hertzian wave. Scientific and industrial research; laboratory services; research and development services in the field of engineering; research in the field of artificial intelligence; design and development of engineering products; development of industrial products; software design and development; design and development of computer hardware; software as a service [SaaS]; designing of electronic systems; design of mechanical, electromechanical and optoelectronic apparatus and instruments; technical consultancy services in the field of semi-conductors, electronics, optoelectronics; testing and quality control services.

Goods & Services

Apparatus and instruments for accumulating and storing electricity; electric-car charger; chargers; electric charging cables; wireless chargers; artificial intelligence apparatus; computers and computer hardware; software; artificial intelligence and machine learning software; artificial intelligence software for vehicles; application software; batteries; batteries for vehicles; chargers for electric batteries; apparatus to charge electric batteries; wireless chargers for batteries; microprocessors; processors [central processing units]; transistors [electronic]; semi-conductors; electrical and electronic components; electronic chips [electronic components]; electronic memory integrated circuit chips; silicon chips; silicon wafers; cards encoded with security features for identification purposes; satellite navigational apparatus; satellite transceivers; gas sensors; telecommunications equipment; devices for telecommunications; light-emitting diodes [LED]; organic light-emitting diodes [OLED]; silicon carbide diodes; electric motor checking [monitoring or supervision] apparatus; loudspeakers; microelectronic components; virtual and augmented reality software; electromechanical software. Plug-in electric cars; geared electric motors for land vehicles; electric motors for motor cars; electric motors for two-wheeled vehicles; parts and fittings for vehicles, other than tyres, wheels, rims and inner tubes. Vehicle repair, maintenance, refueling and recharging, other than repair, maintenance and installation of tyres, wheels, rims, inner tubes, tyres sensors; vehicle battery charging; charging of electric vehicles. Telecommunication services; communication services by satellite; communication via computer terminals, by digital transmission or by satellite; provision of communication services by means of computers; communication by hertzian wave. Scientific and industrial research; laboratory services; research and development services in the field of engineering; research in the field of artificial intelligence; design and development of engineering products; development of industrial products; software design and development; design and development of computer hardware; software as a service [SaaS]; designing of electronic systems; design of mechanical, electromechanical and optoelectronic apparatus and instruments.

Abstract

A reinforced thin-film device is disclosed. The reinforced thin-film device comprising: a substrate having a top surface for supporting an epilayer; a mask layer patterned with a plurality of nanosize cavities disposed on said substrate to form a needle pad; a thin-film of, relative to the substrate, lattice-mismatched semiconductor disposed on said mask layer, wherein said thin-film comprises a plurality of in parallel spaced semiconductor needles of said lattice-mismatched semiconductor embedded in said thin-film, wherein said plurality of semiconductor needles are vertically disposed in the axial direction towards said substrate in said plurality of nanosize cavities of said mask layer; a, relative to the substrate, lattice-mismatched semiconductor epilayer provided on said thin-film and supported thereby; and a FinFET transistor arranged on the lattice-mismatched semiconductor epilayer. The FinFET transistor comprising: a fin semiconductor structure comprising an elongate protruding core portion, the fin semiconductor structure being arranged on the lattice-mismatched semiconductor epilayer, a first and a second nanostructured electrode radially enclosing respectively a source end and a drain end of the protruding core portion, and a nanostructured gate electrode radially enclosing a central portion of the protruding core portion, the central portion being a portion of the protruding core portion between the source end and the drain end.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• G01N 27/414 - Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
• G06N 10/00 - Quantum computing, i.e. information processing based on quantum-mechanical phenomena
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
• H01L 29/775 - Field-effect transistors with one-dimensional charge carrier gas channel, e.g. quantum wire FET
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H10N 60/10 - Junction-based devices
• H10N 60/83 - Element shape
• H10N 60/85 - Superconducting active materials

Abstract

The present invention relates to a method for depositing AIN on a silicon substrate arranged in a process chamber. The method comprises: arranging an aluminum target in said process chamber; providing a process gas composition comprising a noble gas and nitrogen to said process chamber; ionizing said process gas composition by providing an electric field and a magnetic field such that a getter of noble gas ions and nitrogen ions is formed; sputtering said aluminum target while applying a positive bias on the silicon substrate; and depositing an epilayer of aluminum and nitrogen on the silicon substrate. The present invention further relates to a gallium nitride semiconductor transition layer structure comprising a AIN epilayer obtained by the method.

IPC Classes  ?

• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
• C23C 14/02 - Pretreatment of the material to be coated
• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
• C23C 14/34 - Sputtering
• C23C 14/35 - Sputtering by application of a magnetic field, e.g. magnetron sputtering
• C30B 25/06 - Epitaxial-layer growth by reactive sputtering
• C30B 25/18 - Epitaxial-layer growth characterised by the substrate

Abstract

A semiconductor structure (1), comprising: a substrate (2); a base layer (10), the base layer (10) comprising an AlGaN layer, the base layer (10) being arranged above the substrate (2); at least one group of layers (20), the at least one group of layers (20) being arranged above the base layer (10), wherein each of the at least one group of layers (20) comprises: a first layer (21), the first layer (21) being a layer of InGaN and comprising quantum dots (24); a second layer (22), the second layer (22) being a layer of InGaN, the second layer (22) being arranged on and above the first layer (21), wherein the second layer (22) laterally encloses the quantum dots (24) of the first layer (21), wherein a material composition of the InGaN of the second layer (22) is different from a material composition of the InGaN of the first layer (21).

IPC Classes  ?

• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth

Abstract

There is provided a field-programmable gate array, FPGA, device (100) comprising a configurable logic block, CLB, (110) comprising a logic inverter (120) comprising a high-electron-mobility transistor, HEMT, (130), wherein the HEMT comprises: a Si substrate (384); an AlyGay-1N layer structure (380), wherein 0

IPC Classes  ?

• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H03K 19/17736 - Structural details of routing resources
• H03K 19/1776 - Structural details of configuration resources for memories

Abstract

The present invention relates to a power converter device (1) comprising; a first circuit board (100), the first circuit board comprising a first driver (102) and at least four GaN HEMT devices (101) arranged in pairs (103, 104), said pairs connected in parallel; a second circuit board (200), the second circuit board comprising a second driver (202), and at least four MOSFET devices (201) arranged in pairs (203, 204), said pairs connected in parallel; the power converter device comprises at least two electrical connections (20) between the two circuit boards; wherein the first circuit board extends in a first plane and the second circuit board extends in a second plane, and the first and second circuit boards are arranged one above the other such that the two planes extends in parallel and the electrical connections between the two circuit boards extends in a direction substantially perpendicular to said first and second planes; and wherein said at least four GaN HEMT devices (101) are electrically connected equidistant to said first driver (102). The invention further relates to a system (2, 3) comprising such power converter device, and the use thereof.

IPC Classes  ?

• H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
• H02M 1/00 - Details of apparatus for conversion
• H02M 7/219 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
• H05K 1/14 - Structural association of two or more printed circuits

Abstract

322; and/or a plurality of GaN particles (16).

IPC Classes  ?

• C01B 3/00 - HydrogenGaseous mixtures containing hydrogenSeparation of hydrogen from mixtures containing itPurification of hydrogen

Abstract

A method for forming a matrix of light-emitting diode (LED) elements (11, 21, 31) of different colours is provided. The method comprises epitaxially growing, on a GaN sacrificial layer (140), a first n-doped GaN layer (111), a first InxGa(1-X)N layer (112) and a first p-doped GaN layer (113) to form a first array of first LED elements (11) for emitting light of a first colour, and forming a first etch mask (151) comprising a plurality of first trenches (161). The method further comprises: epitaxially growing a second array of second LED elements (21), for emitting light of a second colour, in the plurality of first trenches; forming a second etch mask (152) protecting the second array and comprising a plurality of second trenches (162); and epitaxially growing a third array of third LED elements (31), for emitting light of a third colour, in the plurality of second trenches.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Goods & Services

Apparatus and instruments for accumulating and storing electricity; electric car-charger; chargers; electric charging cables; wireless chargers; artificial intelligence apparatus, namely, robotical electrical control apparatus, humanoid robots having communication and learning functions for assisting people, robotics, namely, computer software and hardware for the conception, design, manufacture and operation of robots, digital assistants and personal digital assistants, virtual assistants, machine-to-machine [M2M] applications, wearable digital electronic communication devices, electronic tracking apparatus and instruments and global positioning instruments; computers and computer hardware; software; artificial intelligence and machine learning software; artificial intelligence software for vehicles; software for monitoring, analysing, controlling and running physical world operations; system and system support software; application software; batteries; batteries for vehicles; chargers for electric batteries; wireless chargers for batteries; microprocessors; processors [central processing units]; transistors; semi-conductors; electrical and electronic components; electronic storage media, electronic load modules and electronic broadcasting apparatus; electronic connectors; electronic inductors; electronic chips [electronic components]; electronic memory integrated circuit chips, namely, dynamic random access memory chips, microprocessor units, application specific integrated circuits, digital signal processors and programmable memory chips; silicon chips; silicon wafers; transistors [electronic]; electronic navigating apparatus; audio electronic apparatus; electronic data processing equipment; electrical and electronic circuits, circuit boards, memory units and memory circuits; measuring, detecting, monitoring and controlling devices; sensors, detectors and monitoring instruments; electronic monitoring instruments; electronic controllers, control instruments and access control systems; electronic remote control apparatus and devices; electronic control units, process controlling apparatus and regulators; electric or electronic control modules; electronic process regulating apparatus, process controlling apparatus and instruments; digital electronic controllers; electronic coding apparatus; electronic meters and distance meters; electronic sensors and measurement sensors; cards encoded with security features for identification purposes; satellite navigational apparatus; satellite transceivers; gas sensors; telecommunications equipment; devices for telecommunications; light-emitting diodes [LED]; organic light-emitting diodes [OLED]; silicon carbide diodes; electric motor checking [monitoring or supervision] apparatus; loudspeakers; microelectronic components; virtual and augmented reality software; electromechanical software; quantum computers; quantum dots [crystalline semi-conductor materials]; quantum dot light-emitting diodes [QLED]; electrolysis apparatus [electrolytic cells]. Plug-in electric cars; hydrogen-fueled cars; geared electric motors for land vehicles; electric motors for motor cars; electric motors for two-wheeled vehicles; parts and fittings for vehicles. Vehicle repair, maintenance, refueling and recharging; vehicle battery charging; charging of electric vehicles; fueling of hydrogen gas for vehicles. Telecommunication services; communication services by satellite; communication via computer terminals, by digital transmission or by satellite; provision of communication services by means of computers; communication by hertzian wave. Scientific and industrial research; laboratory services; research and development services in the field of engineering; research in the field of artificial intelligence; design and development of engineering products; development of industrial products; software design and development; design and development of computer hardware; maintenance of computer programs; software as a service [SaaS]; quantum computing; consulting services in the field of quantum computers and quantum computing; designing of electronic systems; design of mechanical, electromechanical and optoelectronic apparatus and instruments.

Abstract

There is provided a vertical high-electron-mobility transistor, HEMT (100), comprising: a drain contact (410), a nanowire layer (500) arranged on the drain contact (410) and comprising at least one vertical nanowire (510) and a supporting material (520) laterally enclosing the at least one vertical nanowire (510), a heterostructure (600) arranged on the nanowire layer and comprising an AIGaN-layer (610) and a GaN-layer (620) together forming a heterojunction, at least one source contact (420a, 420b) in contact with the heterostructure (600), and a gate contact (430) in contact with the heterostructure (600), arranged above the at least one vertical nanowire (510), wherein the at least one vertical nanowire (510) is forming an electron transport channel between the drain contact and the heterostructure. There is also provided a method for producing a vertical HEMT (100).

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/66 - Types of semiconductor device

Abstract

A semiconductor structure and a microfluidic system comprising the semiconductor structure are disclosed. The semiconductor structure comprises a thermoelement layer. The thermoelement layer comprises p- and n-type thermoelements. These thermoelements form regions wherein respective region is associated with a specific temperature range, where achieving the specific temperature range is based on an electron or hole current flowing through the thermoelements. The semiconductor structure forms part of the microfluidic system comprising a microfluidic channel having a meander extension across regions having different temperature ranges. This allows a fluid flowing in the microfluidic channel being exposable to cyclic temperature variations.

IPC Classes  ?

• B01L 7/00 - Heating or cooling apparatusHeat insulating devices
• H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
• H10N 10/853 - Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
• H10N 19/00 - Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups

Abstract

1-xN, wherein 0≤x≤0.95.

IPC Classes  ?

• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
• H01L 29/66 - Types of semiconductor device
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Goods & Services

Telecommunication access services; Digital network telecommunications services; Telecommunications services, namely, wireless telephony and wireless broadband communications services for the transmission of voice and data; Telecommunications services, namely, ISDN services; Telecommunications services for providing multiple-user access to a global computer network; Telecommunication services, namely, wireless telephone services; Telecommunication services, namely, providing internet access via broadband optical or wireless networks; Telecommunication services, namely, providing electronic message alerts via the internet notifying individuals of a changed status or condition of a sensing device in a security system; Telecommunication services, namely, providing e-mail notification alerts via the internet notifying vehicle owners of timing of vehicle maintenance; Telecommunications services, namely, radio communication; communication services by satellite; communication via computer terminals, by digital transmission or by satellite; provision of communication services by means of computers terminals; communication by hertzian wave Apparatus and instruments for accumulating and storing electricity; apparatus and instruments for accumulating and storing electricity, namely, flow batteries, rechargeable batteries, accumulators, capacitors, supercapacitors, solar modules, solar hybrid modules and solar energy photovoltaic inverters; electric car-charger, namely, vehicle charging stations for electric cars; chargers namely, battery chargers, wireless chargers, portable power chargers, chargers for electric accumulators, chargers for smart phones and solar-powered battery chargers; electric charging cables; wireless chargers; artificial intelligence apparatus, namely, electrical control apparatus for managing robotics; humanoid robots having communication and learning functions for assisting people; robotics, namely, recorded computer software and computer hardware for the conception, design, manufacture and operation of robots; personal digital assistants; electronic tracking apparatus and instruments in the nature of global positioning instruments; artificial intelligence apparatus, namely, robotical electrical control apparatus, namely, electrical controllers, electric control devices for energy management, electronic control systems for engines and machines, simulators for steering, driving or control of vehicles, control valves for regulating the flow of gases and liquids, and electronic control gears for LED lamps and lamp fixtures; artificial intelligence apparatus, namely, robotic assistants and robotics being humanoid robots with artificial intelligence for use in scientific research and laboratory robots; artificial intelligence apparatus, namely, digital assistants being personal digital assistant computers and personal digital assistants, personal digital assistants featuring downloadable and recorded virtual assistant software; artificial intelligence apparatus, namely, machine-to-machine (M2M) applications being electric meters, smart meters, smart home meters, vehicle telemetry meters, vehicle telemetry sender and receiver transmitters, RFID readers and lidar apparatus; artificial intelligence apparatus, namely, wearable digital electronic communication devices being wearable computers in the nature of wearable fitness trackers, wearable fitness trackers in the nature of armbands, smartwatches and smart glasses, wearable activity trackers, and Radio Frequency Identification (RFID) tags; artificial intelligence apparatus, namely electronic tracking apparatus and instruments being automatic solar tracking sensors, energy submeters for tracking and monitoring energy usage, and global positioning instruments; computers and computer hardware; downloadable and recorded computer-aided manufacturing (CAM) software for semiconductors, photomasks, microprocessors, and integrated circuits; downloadable and recorded software for current scaling for gallium nitride power conversions; downloadable and recorded software for integrating and developing computer systems, applications, and databases, for wireless content delivery, controlling and managing access server applications, document management, database management, processing digital images, graphics and text, organizing and viewing digital images, and creating searchable databases of information and data; downloadable and recorded computer software using artificial intelligence for machine learning; downloadable and recorded computer software using artificial intelligence for control, operating, and management of vehicles; downloadable and recorded computer software using artificial intelligence software for control and management of satellites, energy equipment, and solar energy equipment; downloadable and recorded software for monitoring, analysing, controlling and running physical world operations; Downloadable and recorded computer operating system and system support software; downloadable and recorded application software for computer system, application and database application, integration and development, for wireless content delivery, for controlling and managing access server applications, for document management and database management, for processing digital images, graphics and text, for organizing and viewing digital images, for creating searchable databases of information and data; batteries; batteries for vehicles; chargers for electric batteries; wireless chargers for batteries; microprocessors; processors being computer central processing units; transitors; semi-conductors; electrical and electronic components in the nature of connectors, relays, switches, resistors, semiconductors, integrated circuits, transistors, high electron mobility transistors (HEMT), power amplifiers, integrated circuits, field programmable gate arrays (FPGA) in the nature of integrated circuits, diodes, central processing units (CPU), AC/DC converters, DC/DC converter, power inverters, capacitor, NAND gates in the nature of integrated circuits, anodes, electrochemical cells, electrical inductors, and solid state storage, namely, a nonvolatile storage medium that employs integrated circuits; electronic connectors; electronic inductors; electronic chips being 5G chips, power chips, AI chips and chips for the manufacture of electronic circuits; electronic chips for the manufacture of integrated circuts; electronic memory integrated circuit chips being computer chips, namely, dynamic random access memory chips; electronic memory encoded circuit chips, namely, dynamic random access memory chips; microprocessor units being microprocessors; application specific electronic integrated circuits; digital signal processors and blank programmable memory chips; silicon chips; silicon wafers; transistors being electronic apparatus; electronic navigating apparatus; electronic data processing equipment; electrical and electronic circuits, circuit boards, semi-conductor memory units and memory circuits; electric or electronic control modules, namely, integrated circuit modules; electronic coding apparatus; cards encoded with security features for identification purposes; satellite navigational apparatus being satellite-aided navigation systems and satellite navigational system, namely, a global positioning system (GPS); satellite transceivers; gas sensors for measuring gas concentration; telecommunications equipment namely, automatic switching apparatus, switches, computer hardware for telecommunications, base stations, exchangers, multiplexers, transmitters, fiber-optic transceivers, repeaters, converters, optimizers and adapters, namely, electrical adapters, power adapters, power supply adaptors for use with portable electronic devices, wireless adapters for electronics, computer network adapters, and ethernet adapters; devices for telecommunications being cell phones, semiconductor chip sets, modems, network routers, gateway routers, computer network interface devices, satellite electronics in the nature of satellite aerials, satellite processors, satellite transmitters, receivers and transceivers, alarm, sensor, and power management devices, and infrastructure equipment in the nature of input and output devices, namely, microphones, loudspeakers, communication hubs, computer network bridges, signal processors, and downloadable and recorded software for controlling networked devices; light-emitting diodes (LEDs); organic light-emitting diodes (OLEDs); silicon carbide diodes; electric motor checking and monitoring or supervision apparatus, namely, control units for monitoring electrical motors, electronic power units for monitoring electric motors, apparatus for monitoring motor circuits, stators and rotors, resistance monitoring apparatus, contamination monitoring apparatus, and insulation monitoring apparatus; loudspeakers; microelectronic components in the nature of electronic inductors, electronic resistors, diodes, and electric conductors; downloadable and recorded virtual and augmented reality computer operating software for virtual environments and virtual worlds, and for enhancement of the real world for the purpose of adding digital elements over real-world views; downloadable and recorded electromechanical software for electromechanical engineering design and design of electrical and mechanical components; quantum computers; quantum dots, namely, crystalline semi-conductor materials; quantum dot light-emitting diodes (QLEDs); electrolysis apparatus comprising electrolytic cells, namely, gallium nitride anodes and/or cathodes integrated in electrolysis cells; photoanodes Plug-in electric cars; hydrogen-fueled cars; geared electric motors for land vehicles; electric motors for motor cars; electric motors for two-wheeled vehicles; parts and fittings for vehicles, namely, anti-theft devices for vehicles, anti-theft alarms for vehicles, electrical anti-theft installations for vehicles, security alarms for vehicles, and safety devices and equipment for vehicles in the nature of air bags, safety seats for use in vehicles, safety belts for vehicle seats, and seat safety harnesses for vehicles Vehicle repair, maintenance, refueling, and recharging services; vehicle battery charging; charging of electric vehicles; fueling of hydrogen gas for vehicles Scientific and industrial research in the field of current scaling for gallium nitride power conversion and power scaling; scientific laboratory services; research and development services in the field of engineering; research in the field of artificial intelligence; design and development of engineering products, namely, products for current scaling for gallium nitride power conversion; development of industrial products, namely, products for current scaling for gallium nitride power conversion; software design and development; design and development of computer hardware; maintenance of computer programs; software as a service (SaaS) featuring software for current scaling for gallium nitride power conversions; quantum computing research; software as a service (SaaS) featuring computer-aided manufacturing (CAM) software for semiconductors, photomasks, microprocessors, and integrated circuits; consulting services in the field of quantum computers and quantum computing; designing of electronic systems; design of mechanical, electromechanical and optoelectronic apparatus and instruments

Abstract

The present inventive concept relates to a spin qubit transistor (100) comprising a base layer (102), a first qubit comprising, a first computing semiconductor island (106) and a first readout semiconductor island (108) arranged with a distance in the range of 3-10 nm therebetween, a second qubit comprising, a second computing semiconductor island (110) and a second readout semiconductor island (112) arranged with a distance in the range of 3-10 nm therebetween, wherein each of said semiconductor islands has a size causing each of said semiconductor islands to exhibit 3-dimensional quantum confinement of a single electron hole, and wherein each of said semiconductor islands forms a semiconductor heterojunction with the base layer. Each of the semiconductor islands has a corresponding gate (G1-G4), for modulation of the computing islands or readout of the readout islands. Said first computing semiconductor island and said second computing semiconductor island are configured to have a unique resonance frequency respectively. A control electrode arrangement (B) between the computing and the readout islands controls the coupling between the qubits. The present inventive concept further comprises a method for forming a spin qubit transistor and a quantum computer comprising at least one spin qubit transistor.

IPC Classes  ?

• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
• H01L 29/66 - Types of semiconductor device
• B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Abstract

A device (1) for emitting light, the device (1) comprising: a substrate (2); a base layer (4) arranged on the substrate (2); a diode layer structure (10) arranged on the base layer (4), the diode layer structure (10) comprising a quantum well layer structure (30) sandwiched between an n-doped semiconductor layer (12) and a p-doped semiconductor layer (14); the quantum well layer structure (30) comprising a first (41) and second (42) quantum well, a first (51) and a second (52) proximal barrier layer, and a first (61) and a second (62) distal barrier layer, wherein the first (41) and second (42) quantum wells and the first (51) and second (52) proximal barrier layers are sandwiched between the first (61) and second (62) distal barrier layers

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
• H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
• H01S 5/32 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures
• H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
• H01S 5/42 - Arrays of surface emitting lasers
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01S 5/34 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
• H01S 5/02 - Structural details or components not essential to laser action

Abstract

There is provided a monolithic microwave integrated circuit, MMIC, front-end module which may include: a gallium nitride structure supported by a silicon substrate, a silicon-based transmit/receive switch having a transmit mode and a receive mode, a transmit amplifier configured to amplify an outgoing signal to be transmitted by said MMIC front-end module, wherein said transmit amplifier is electrically connected to said transmit/receive switch, wherein said transmit amplifier comprises a gallium nitride high-electron-mobility transistor, HEMT, formed in said gallium nitride structure. The MMIC front-end module may further include a receive amplifier configured to amplify an incoming signal received by said MMIC front-end module, wherein said receive amplifier is electrically connected to said transmit/receive switch, wherein said receive amplifier may include a gallium nitride HEMT formed in said gallium nitride structure.

IPC Classes  ?

• H03F 3/187 - Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only in integrated circuits
• H03F 3/195 - High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
• H03F 3/24 - Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages

Goods & Services

Apparatus and instruments for accumulating and storing electricity; electric car-charger; chargers; electric charging cables; wireless chargers; artificial intelligence apparatus, namely, robotical electrical control apparatus, robotic assistants and robotics, digital assistants and personal digital assistants, virtual assistants, machine-to-machine [M2M] applications, wearable digital electronic communication devices, electronic tracking apparatus and instruments and global positioning instruments; computers and computer hardware; software; artificial intelligence and machine learning software; artificial intelligence software for vehicles; software for monitoring, analysing, controlling and running physical world operations; system and system support software; application software; batteries; batteries for vehicles; chargers for electric batteries; wireless chargers for batteries; microprocessors; processors [central processing units]; transistors; semi-conductors; electrical and electronic components; electronic storage media, electronic load modules and electronic broadcasting apparatus; electronic connectors; electronic inductors; electronic chips [electronic components]; electronic memory integrated circuit chips, namely, dynamic random access memory chips, microprocessor units, application specific integrated circuits, digital signal processors, programmable memory chips and integrated circuit memory cards; silicon chips; silicon wafers; transistors [electronic]; electronic navigating apparatus; audio electronic apparatus; electronic data processing equipment; electrical and electronic circuits, circuit boards, memory units and memory circuits; measuring, detecting, monitoring and controlling devices; sensors, detectors and monitoring instruments; electronic monitoring instruments; electronic controllers, control instruments and access control systems; electronic remote control apparatus and devices; electronic control units, process controlling apparatus and regulators; electric or electronic control modules; electronic process regulating apparatus, process controlling apparatus and instruments; digital electronic controllers; electronic coding apparatus; electronic meters and distance meters; electronic sensors and measurement sensors; cards encoded with security features for identification purposes; satellite navigational apparatus; satellite transceivers; gas sensors; telecommunications equipment; devices for telecommunications; light-emitting diodes [LED]; organic light-emitting diodes [OLED]; silicon carbide diodes; electric motor checking [monitoring or supervision] apparatus; loudspeakers; microelectronic components; virtual and augmented reality software; electromechanical software; quantum computers; quantum dots [crystalline semi-conductor materials]; quantum dot light-emitting diodes [QLED]; electrolysis apparatus [electrolytic cells]. Plug-in electric cars; hydrogen-fueled cars; geared electric motors for land vehicles; electric motors for motor cars; electric motors for two-wheeled vehicles; parts and fittings for vehicles.

Abstract

A memory device (1) comprising a semiconductor pillar (40) and at least one memory cell (50) associated with the pillar (40), wherein each of the at least one memory cells (50) comprises a charge trap (60) and a transistor (2), wherein, for each of the at least one memory cells (50): the charge trap (60) of the memory cell (50) is configured to control a threshold voltage of the transistor (2) of the memory cell (50) by a stored charge; and the transistor (2) of the memory cell (50) comprises a source pillar segment (10), a drain pillar segment (14) and a body pillar segment (12), wherein at least one p-doped pillar segment (10, 12, 14) of the transistor (2) comprises a plurality of semiconductor layers (20), wherein layers of the plurality of semiconductor layers (20) are made of AIGaN or GaN, and wherein the plurality of semiconductor layers (20) is configured such that every second layer has a lower aluminum content than the neighboring mutually opposite layers thereof.

IPC Classes  ?

• H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
• H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Abstract

A vertical high-electron-mobility transistor, HEMT (100), comprising: a substrate (310); a drain contact (410), the drain contact being a metal contact via through said substrate; a pillar layer (500) arranged above the drain contact (410) and comprising at least one vertical pillar (510) and a supporting material (520) laterally enclosing the at least one vertical pillar (510); a heterostructure mesa (600) arranged on the pillar layer (500), the heterostructure mesa (600) comprising an AlGaN-layer (610) and a GaN-layer (620), together forming a heterojunction (630); at least one source contact (420a, 420b) electrically connected to the heterostructure mesa (600); a gate contact (430) arranged on said heterostructure mesa (600), and above the at least one vertical pillar (510); wherein the at least one vertical pillar (510) is forming an electron transport channel between the drain contact (410) and the heterojunction (630).

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 21/338 - Field-effect transistors with a Schottky gate

Abstract

There is provided an induction machine (100) comprising a rotor (120); a stator (140); and a phase-shift oscillator (160). The stator comprises: a first winding (141); and a second winding (142), arranged at a first angle (101) relative to said first winding. The phase-shift oscillator comprises: a transistor (170), the transistor (170) being a high-electron mobility transistor, HEMT; and a phase-shift network (180). The first winding is connected to a first node (181) of the phase-shift network and wherein the second winding is connected to a second node (182) of the phase-shift network, wherein the phase-shift oscillator is configured to provide a first phase electric signal at the first node and a second phase electric signal at the second node, wherein a difference between the first and second phase corresponds to the first angle. There is also provided an electric aircraft propulsion system comprising the induction machine.

IPC Classes  ?

• H02K 3/28 - Layout of windings or of connections between windings
• H02K 17/14 - Asynchronous induction motors for multi-phase current having windings arranged for permitting pole-changing
• H02P 25/22 - Multiple windingsWindings for more than three phases
• H03B 5/24 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device

Abstract

A loudspeaker device (200) is provided. The loudspeaker device (200) comprises a micro-electromechanical unit (100). The micro-electromechanical unit (100) comprises a diaphragm (10) having a planar extension. The diaphragm (10) comprises a semiconductor structure (20) comprising a first (22) and a second (24) layer, each layer extending in the planar extension. The first layer (22) comprises Al(1-x)Ga(x)N, wherein 0.2 ≤ x ≤ 0.4, and the second layer (24) comprises GaN. The diaphragm (10) is arranged to oscillate in an extension transverse to the planar extension to thereby generate sound waves. A calibrating weight (17) is arranged on a surface of the diaphragm (10). The micro-electromechanical unit (214) further comprises a support structure (30) supporting the diaphragm (10), an electrode arranged (50) on a surface of the diaphragm (10), and a resonant box.

IPC Classes  ?

• H04R 7/10 - Plane diaphragms comprising a plurality of sections or layers comprising superposed layers in contact
• H04R 17/02 - Microphones
• H04R 19/00 - Electrostatic transducers
• H04R 19/04 - Microphones
• H04R 3/00 - Circuits for transducers

Abstract

x-1N layer structure is arranged to vertically and laterally enclose the vertical nanowire structures. There is also provided an AI processing system comprising said FPGA device (100).

IPC Classes  ?

• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H03K 19/17736 - Structural details of routing resources
• H03K 19/1776 - Structural details of configuration resources for memories

Goods & Services

Apparatus and instruments for accumulating and storing electricity; electric car-charger; chargers; electric charging cables; wireless chargers; artificial intelligence apparatus, namely, robotical electrical control apparatus, robotic assistants and robotics, digital assistants and personal digital assistants, virtual assistants, machine-to-machine [M2M] applications, wearable digital electronic communication devices, electronic tracking apparatus and instruments and global positioning instruments; computers and computer hardware; software; artificial intelligence and machine learning software; artificial intelligence software for vehicles; software for monitoring, analysing, controlling and running physical world operations; system and system support software; application software; batteries; batteries for vehicles; chargers for electric batteries; wireless chargers for batteries; microprocessors; processors [central processing units]; transistors; semi-conductors; electrical and electronic components; electronic storage media, electronic load modules and electronic broadcasting apparatus; electronic connectors; electronic inductors; electronic chips [electronic components]; electronic memory integrated circuit chips; silicon chips; silicon wafers; transistors [electronic]; electronic navigating apparatus; audio electronic apparatus; electronic data processing equipment; electrical and electronic circuits, circuit boards, memory units and memory circuits; measuring, detecting, monitoring and controlling devices; sensors, detectors and monitoring instruments; electronic monitoring instruments; electronic controllers, control instruments and access control systems; electronic remote control apparatus and devices; electronic control units, process controlling apparatus and regulators; electric or electronic control modules; electronic process regulating apparatus, process controlling apparatus and instruments; digital electronic controllers; electronic coding apparatus; electronic meters and distance meters; electronic sensors and measurement sensors; cards encoded with security features for identification purposes; satellite navigational apparatus; satellite transceivers; gas sensors; telecommunications equipment; devices for telecommnications; light-emitting diodes [LED]; organic light-emitting diodes [OLED]; silicon carbide diodes; electric motor checking [monitoring or supervision] apparatus; loudspeakers; microelectronic components; virtual and augmented reality software; electromechanical software; quantum computers; quantum dots [crystalline semi-conductor materials]; quantum dot light-emitting diodes [QLED]; electrolysis apparatus [electrolytic cells].. Plug-in electric cars; hydrogen-fueled cars; geared electric motors for land vehicles; electric motors for motor cars; electric motors for two-wheeled vehicles; parts and fittings for vehicles.. Vehicle repair, maintenance, refueling and recharging; vehicle battery charging; charging of electric vehicles; fueling of hydrogen gas for vehicles.. Telecommunication services; communication services by satellite; communication via computer terminals, by digital transmission or by satellite; provision of communication services by means of computers; communication by hertzian wave.. Scientific and industrial research; laboratory services; research and development services in the field of engineering; research in the field of artificial intelligence; design and development of engineering products; development of industrial products; software design and development; design and development of computer hardware; maintenance of computer programs; software as a service [SaaS]; quantum computing; consulting services in the field of quantum computers and quantum computing; designing of electronic systems; design of mechanical, electromechanical and optoelectronic apparatus and instruments..

Goods & Services

Apparatus and instruments for accumulating and storing electricity, namely, flow batteries, rechargeable batteries, accumulators, capacitors, supercapacitors, solar modules, solar hybrid modules and solar energy photovoltaic inverters; electric car-chargers, namely, vehicle charging stations for electric cars; chargers, namely, battery chargers, wireless chargers, portable power chargers, chargers for electric accumulators, chargers for smart phones and solar-powered battery chargers; electric charging cables; wireless chargers; artificial intelligence apparatus, namely, robotical electrical control apparatus, namely, electrical controllers, electric control devices for energy management, electronic control systems for engines and machines, simulators for steering, driving or control of vehicles, control valves for regulating the flow of gases and liquids, and electronic control gears for LED lamps and lamp fixtures; artificial intelligence apparatus, namely, robotic assistants and robotics being humanoid robots with artificial intelligence for use in scientific research and laboratory robots; artificial intelligence apparatus, namely, digital assistants being personal digital assistant computers and personal digital assistants, personal digital assistants featuring downloadable and recorded virtual assistant software; artificial intelligence apparatus, namely, machine-to-machine (M2M) applications being electric meters, smart meters, smart home meters, vehicle telemetry meters, vehicle telemetry sender and receiver transmitters, RFID readers and lidar apparatus; artificial intelligence apparatus, namely, wearable digital electronic communication devices being wearable computers in the nature of wearable fitness trackers and wearable fitness trackers in the nature of armbands, smartwatches and smart glasses, wearable activity trackers and Radio Frequency Identification (RFID) tags; artificial intelligence apparatus, namely, electronic tracking apparatus and instruments being automatic solar tracking sensors, and energy submeters for tracking and monitoring energy usage, and global positioning instruments; computers and computer hardware; downloadable and recorded software for integrating and developing computer systems, applications and databases, for wireless content delivery, for controlling and managing access server applications, for document management and database management, for processing digital images, graphics and text, for organizing and viewing digital images, for creating searchable databases of information and data; downloadable and recorded computer software using artificial intelligence for machine learning; downloadable and recorded computer software using artificial intelligence for control and management of vehicles; downloadable and recorded computer software using artificial intelligence for control and management of satellites, energy equipment and solar energy equipment; downloadable and recorded application software for computer system, application and database application, integration and development, for wireless content delivery, for controlling and managing access server applications, for document management and database management, for processing digital images, graphics and text, for organizing and viewing digital images, for creating searchable databases of information and data; batteries; batteries for vehicles; chargers for electric batteries; wireless chargers for batteries; microprocessors; processors being central processing units; transistors; semi-conductors; electrical and electronic components in the nature of connectors, relays, switches, resistors, semiconductors, integrated circuits and transistors, power amplifiers, application-specific integrated circuit, field programable gate arrays in the nature of integrated circuits, diodes, central processing units, AC/DC converters, DC/DC converter, power inverters, capacitor, NAND gates in the nature of integrated circuits, anodes, electrochemical cells and electrical inductors; electronic chips being 5G chips, power chips and AI chips, and chips for the manufacture of electronic circuits; electronic memory integrated circuit chips being computer chips, namely, dynamic random access memory chips, microprocessor units being microprocessors, application specific integrated circuits, digital signal processors and programmable memory chips; silicon chips; silicon wafers; cards encoded with security features for identification purposes; satellite navigational apparatus being satellite-aided navigation systems and satellite navigational system, namely, a global positioning system (GPS); satellite transceivers; gas sensors for measuring gas concentration; telecommunications equipment, namely, automatic switching apparatus, switches, computer hardware for telecommunications, base stations, exchangers, multiplexers, transmitters, fiber-optic transceivers, repeaters, converters, optimizers and adapters, namely, electrical adapters, power adapters, power supply adaptors for use with portable electronic devices, wireless adapters for electronics, computer network adapters, ethernet adapters; devices for telecommunications being cell phones, semiconductor chip sets, modems, network routers, gateway routers, computer network interface devices, satellite electronics in the nature of satellite aerials, satellite processors, satellite transmitters, receivers and transceivers, alarm, sensor, and power management devices and infrastructure equipment in the nature of input and output devices, namely, microphones, loudspeakers, communication hubs, computer network bridges, signal processors, downloadable and recorded software for controlling networked devices; light-emitting diodes (LEDs); organic light-emitting diodes (OLEDs); silicon carbide diodes; electric motor checking monitoring and or supervision apparatus, namely, control units for monitoring electrical motors, electronic power units for monitoring electric motors, and apparatus for monitoring motor circuits, stators and rotors, resistance monitoring apparatus, contamination monitoring apparatus, and insulation monitoring apparatus; loudspeakers; microelectronic components in the nature of electronic inductors, electronic resistors, diodes, and electric conductors; downloadable and recorded virtual and augmented reality computer operating software for virtual environments and virtual worlds, and for enhancement of the real world for the purpose of adding digital elements over real-world views; downloadable and recorded electromechanical software for electromechanical engineering design and design of electrical and mechanical components; quantum computers; quantum dots, namely, crystalline semi-conductor materials; quantum dot light-emitting diodes (QLED); electrolysis apparatus comprising electrolytic cells, namely gallium nitride anodes and cathodes integrated in electrolysis cells; photoanodes. Plug-in electric cars; hydrogen-fueled cars; geared electric motors for land vehicles; electric motors for motor cars; electric motors for two-wheeled vehicles; parts and fittings for land vehicles being anti-theft devices for vehicles, security devices for vehicles in the nature of security alarms for vehicles, anti-theft devices for vehicles, and safety devices and equipment for vehicles in the nature of air bags, safety seats for use in vehicles, safety belts for vehicle seats, and seat safety harnesses for vehicles

Abstract

A transistor (1) comprising a source (10), a body (12) and a drain (14), the transistor (1) further comprising a plurality of semiconductor layers (20), wherein layers of the plurality of semiconductor layers (20) are made of AIGaN or GaN, and wherein the plurality of semiconductor layers (20) is configured such that an aluminum content changes between each consecutive layer such that every second layer has a lower aluminum content than the neighboring mutually opposite layers thereof, wherein the transistor (1) is either a N-channel metal-oxide-semiconductor, NMOS, transistor (1'), wherein part of the plurality of semiconductor layers (20) is p-doped and forms part of the body (12) of the NMOS transistor (1'); or a P-channel metal-oxide-semiconductor, PMOS, transistor (1"), wherein part of the plurality of semiconductor layers (20) is p-doped and forms part of the source (10) or the drain (14) of the PMOS transistor (1").

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/66 - Types of semiconductor device
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

Abstract

A reinforced thin-film device is disclosed. The reinforced thin-film device comprising: a substrate having a top surface for supporting an epilayer; a mask layer patterned with a plurality of nanosize cavities disposed on said substrate to form a needle pad; a thin-film of, relative to the substrate, lattice-mismatched semiconductor disposed on said mask layer, wherein said thin-film comprises a plurality of in parallel spaced semiconductor needles of said lattice-mismatched semiconductor embedded in said thin-film, wherein said plurality of semiconductor needles are vertically disposed in the axial direction towards said substrate in said plurality of nanosize cavities of said mask layer; a, relative to the substrate, lattice-mismatched semiconductor epilayer provided on said thin-film and supported thereby; and a FinFET transistor arranged on the lattice-mismatched semiconductor epilayer. The FinFET transistor comprising: a fin semiconductor structure comprising an elongate protruding core portion, the fin semiconductor structure being arranged on the lattice-mismatched semiconductor epilayer, a first and a second nanostructured electrode radially enclosing respectively a source end and a drain end of the protruding core portion, and a nanostructured gate electrode radially enclosing a central portion of the protruding core portion, the central portion being a portion of the protruding core portion between the source end and the drain end.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/775 - Field-effect transistors with one-dimensional charge carrier gas channel, e.g. quantum wire FET
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H10N 60/10 - Junction-based devices
• H10N 60/83 - Element shape
• H10N 60/85 - Superconducting active materials
• G01N 27/414 - Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
• G06N 10/00 - Quantum computing, i.e. information processing based on quantum-mechanical phenomena
• H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Goods & Services

Apparatus and instruments for accumulating and storing electricity; electric-car charger; chargers; electric charging cables; wireless chargers; artificial intelligence apparatus namely, robotical electrical control apparatus, robotic assistants and robotics, digital assistants and personal digital assistants, virtual assistants, machine-to-machine [M2M] applications, wearable digital electronic communication devices, electronic tracking apparatus and instruments and global positioning instruments; computers and computer hardware; software; artificial intelligence and machine learning software; artificial intelligence software for vehicles; application software; batteries; batteries for vehicles; chargers for electric batteries; apparatus to charge electric batteries; wireless chargers for batteries; microprocessors; processors [central processing units]; transistors [electronic]; semi-conductors; electrical and electronic components; electronic chips [electronic components]; electronic memory integrated circuit chips, namely, dynamic random access memory chips, microprocessor units, application specific integrated circuits, digital signal processors and programmable memory chips; silicon chips; silicon wafers; cards encoded with security features for identification purposes; satellite navigational apparatus; satellite transceivers; gas sensors; telecommunications equipment; devices for telecommunications; light-emitting diodes [LED]; organic light-emitting diodes [OLED]; silicon carbide diodes; electric motor checking [monitoring or supervision] apparatus; loudspeakers; microelectronic components; virtual and augmented reality software; electromechanical software. Plug-in electric cars; geared electric motors for land vehicles; electric motors for motor cars; electric motors for two-wheeled vehicles; parts and fittings for vehicles, other than tyres, wheels, rims and inner tubes. Vehicle repair, maintenance, refueling and recharging, other than repair, maintenance and installation of tyres, wheels, rims, inner tubes, tyres sensors; vehicle battery charging; charging of electric vehicles. Telecommunication services; communication services by satellite; communication via computer terminals, by digital transmission or by satellite; provision of communication services by means of computers; communication by hertzian wave. Scientific and industrial research; laboratory services, namely, scientific laboratory services, laboratory research services and laboratory testing services; research and development services in the field of engineering; research in the field of artificial intelligence; design and development of engineering products; development of industrial products; software design and development; design and development of computer hardware; software as a service [SaaS]; designing of electronic systems; design of mechanical, electromechanical and optoelectronic apparatus and instruments.

Abstract

A device (1) for performing electrolysis of water is disclosed. The device comprising: a semiconductor structure (10) comprising a surface (11) and an electron guiding layer (12) below said surface (11), the electron guiding layer (12) of the semiconductor structure (10) being configured to guide electron movement in a plane parallel to the surface (11), the electron guiding layer (12) of the semiconductor structure (10) comprising an InGaN quantum well (14) or a heterojunction (18), the heterojunction (18) being a junction between AlN material and GaN material or between AlGaN material and GaN material; at least one metal cathode (20) arranged on the surface (11) of the semiconductor structure (10); and at least one photoanode (30) arranged on the surface (11) of the semiconductor structure (10), wherein the at least one photoanode (30) comprises a plurality of quantum dots (32) of InxGa(1-x)N material, wherein 0.4 ? x ? 1. Also a system comprising such device is disclosed.

IPC Classes  ?

• C25B 1/04 - Hydrogen or oxygen by electrolysis of water
• H01M 8/0656 - Combination of fuel cells with means for production of reactants or for treatment of residues with means for production of gaseous reactants by electrochemical means
• H01M 8/1018 - Polymeric electrolyte materials
• C25B 1/55 - Photoelectrolysis
• C25B 9/17 - Cells comprising dimensionally-stable non-movable electrodesAssemblies of constructional parts thereof
• C25B 9/40 - Cells or assemblies of cells comprising electrodes made of particlesAssemblies of constructional parts thereof
• C25B 11/037 - Electrodes made of particles
• C25B 11/052 - Electrodes comprising one or more electrocatalytic coatings on a substrate
• C25B 11/067 - Inorganic compound e.g. ITO, silica or titania
• C25B 11/075 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of a single catalytic element or catalytic compound
• C25B 11/081 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of a single catalytic element or catalytic compound the element being a noble metal
• C25B 11/087 - Photocatalytic compound
• C01B 3/50 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification

Abstract

There is provided an AC-DC converter circuit (100) for high power charging of an electrical battery. The circuit comprises an input rectifier comprising a first node and a second node. The input rectifier (110) is configured to receive an AC voltage at the first node (112) and provide a rectified voltage at the second node (114). The circuit further comprises a first transistor (120), comprising a first gate node (122), a first source node (124), and a first drain node (126). The first drain node is connected to the second node of the input rectifier. The first gate node is connected to a ground node (170). The circuit further comprises a second transistor (130), comprising a second gate node (132), a second source node (134), and a second drain node (136). The second drain node is connected to the first source node. The second transistor materially corresponds to the first transistor. The circuit further comprises a duty cycle control unit (140) connected to the second gate node for providing the second transistor with a switching waveform. The circuit further comprises an output rectifier (150) connected to the second source node or the first source node. The circuit further comprises an output electronic filter (160) connected to the second source node or an output node (151) of the output rectifier. An AC-DC converter device, a method for charging an electrical battery, and a regenerative braking system is also provided.

IPC Classes  ?

• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• B60L 50/60 - Electric propulsion with power supplied within the vehicle using propulsion power supplied by batteries or fuel cells using power supplied by batteries
• B60L 53/24 - Using the vehicle's propulsion converter for charging
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H02J 7/02 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from AC mains by converters
• H02M 1/00 - Details of apparatus for conversion
• H02M 7/06 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
• H02M 7/21 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
• H02M 7/217 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
• H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
• H03K 17/16 - Modifications for eliminating interference voltages or currents

Abstract

(1-x)N material, wherein 0.4≤x≤1. A system including such a device is also disclosed.

IPC Classes  ?

• C25B 1/04 - Hydrogen or oxygen by electrolysis of water
• C25B 9/23 - Cells comprising dimensionally-stable non-movable electrodesAssemblies of constructional parts thereof with diaphragms comprising ion-exchange membranes in or on which electrode material is embedded
• C25B 11/049 - Photocatalysts
• C25B 11/046 - Alloys
• C25B 9/50 - Cells or assemblies of cells comprising photoelectrodesAssemblies of constructional parts thereof
• G01N 27/414 - Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Abstract

x(1-x)(1-x)N material, wherein 0.4 ≤ x ≤ 1. Also a system comprising such device is disclosed.

IPC Classes  ?

• C25B 1/04 - Hydrogen or oxygen by electrolysis of water
• B01D 53/047 - Pressure swing adsorption
• C01B 3/50 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
• C25B 1/55 - Photoelectrolysis
• C25B 9/17 - Cells comprising dimensionally-stable non-movable electrodesAssemblies of constructional parts thereof
• C25B 9/40 - Cells or assemblies of cells comprising electrodes made of particlesAssemblies of constructional parts thereof
• C25B 11/037 - Electrodes made of particles
• C25B 11/052 - Electrodes comprising one or more electrocatalytic coatings on a substrate
• C25B 11/067 - Inorganic compound e.g. ITO, silica or titania
• C25B 11/075 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of a single catalytic element or catalytic compound
• C25B 11/081 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of a single catalytic element or catalytic compound the element being a noble metal
• C25B 11/087 - Photocatalytic compound
• H01M 8/0656 - Combination of fuel cells with means for production of reactants or for treatment of residues with means for production of gaseous reactants by electrochemical means
• H01M 8/1018 - Polymeric electrolyte materials
• C21B 3/00 - General features in the manufacture of pig-iron
• G21B 3/00 - Low-temperature nuclear fusion reactors, e.g. alleged cold fusion reactors

Abstract

a receive amplifier (113) configured to amplify an incoming signal received by said MMIC front-end module, wherein said receive amplifier is electrically connected (133) to said transmit/receive switch, wherein said receive amplifier comprises a gallium nitride HEMT (115) formed in said gallium nitride structure.

IPC Classes  ?

• H03F 3/187 - Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only in integrated circuits
• H03F 3/24 - Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
• H03F 3/195 - High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits

Abstract

The present invention relates to a power converter device (1) comprising; a first circuit board (100), the first circuit board comprising a first driver (102) and at least four GaN HEMT devices (101) arranged in pairs (103, 104), said pairs connected in parallel; a second circuit board (200), the second circuit board comprising a second driver (202), and at least four MOSFET devices (201) arranged in pairs (203, 204), said pairs connected in parallel; the power converter device comprises at least two electrical connections (20) between the two circuit boards; wherein the first circuit board extends in a first plane and the second circuit board extends in a second plane, and the first and second circuit boards are arranged one above the other such that the two planes extends in parallel and the electrical connections between the two circuit boards extends in a direction substantially perpendicular to said first and second planes; and wherein said at least four GaN HEMT devices (101) are electrically connected equidistant to said first driver (102). The invention further relates to a system (2, 3) comprising such power converter device, and the use thereof.

IPC Classes  ?

• H02M 1/00 - Details of apparatus for conversion
• H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
• H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
• H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
• H03K 17/0814 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
• H02M 1/44 - Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
• H02M 7/219 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration

Abstract

x(1-X)(1-X)N layer (112) and a first p-doped GaN layer (113) to form a first array of first LED elements (11) for emitting light of a first colour, and forming a first etch mask (151) comprising a plurality of first trenches (161). The method further comprises: epitaxially growing a second array of second LED elements (21), for emitting light of a second colour, in the plurality of first trenches; forming a second etch mask (152) protecting the second array and comprising a plurality of second trenches (162); and epitaxially growing a third array of third LED elements (31), for emitting light of a third colour, in the plurality of second trenches.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Abstract

a fourth semiconductor layer (140) arranged on said third semiconductor layer, the fourth semiconductor layer comprising GaN. There is also provided a high-electron-mobility transistor device and methods of producing such structures and devices.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 29/66 - Types of semiconductor device
• H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions

Goods & Services

Apparatus and instruments for accumulating and storing electricity; electric car-charger; chargers; electric charging cables; wireless chargers; artificial intelligence apparatus, namely, robotical electrical control apparatus, robotic assistants and robotics, digital assistants and personal digital assistants, virtual assistants, machine-to-machine [M2M] applications, wearable digital electronic communication devices, electronic tracking apparatus and instruments and global positioning instruments; computers and computer hardware; software; artificial intelligence and machine learning software; artificial intelligence software for vehicles; software for monitoring, analysing, controlling and running physical world operations; system and system support software; application software; batteries; batteries for vehicles; chargers for electric batteries; wireless chargers for batteries; microprocessors; processors [central processing units]; transistors; semi-conductors; electrical and electronic components; electronic storage media, electronic load modules and electronic broadcasting apparatus; electronic connectors; electronic inductors; electronic chips [electronic components]; electronic memory integrated circuit chips; silicon chips; silicon wafers; transistors [electronic]; electronic navigating apparatus; audio electronic apparatus; electronic data processing equipment; electrical and electronic circuits, circuit boards, memory units and memory circuits; measuring, detecting, monitoring and controlling devices; sensors, detectors and monitoring instruments; electronic monitoring instruments; electronic controllers, control instruments and access control systems; electronic remote control apparatus and devices; electronic control units, process controlling apparatus and regulators; electric or electronic control modules; electronic process regulating apparatus, process controlling apparatus and instruments; digital electronic controllers; electronic coding apparatus; electronic meters and distance meters; electronic sensors and measurement sensors; cards encoded with security features for identification purposes; satellite navigational apparatus; satellite transceivers; gas sensors; telecommunications equipment; devices for telecommnications; light-emitting diodes [LED]; organic light-emitting diodes [OLED]; silicon carbide diodes; electric motor checking [monitoring or supervision] apparatus; loudspeakers; microelectronic components; virtual and augmented reality software; electromechanical software; quantum computers; quantum dots [crystalline semi-conductor materials]; quantum dot light-emitting diodes [QLED]; electrolysis apparatus [electrolytic cells]. Plug-in electric cars; hydrogen-fueled cars; geared electric motors for land vehicles; electric motors for motor cars; electric motors for two-wheeled vehicles; parts and fittings for vehicles. Vehicle repair, maintenance, refueling and recharging; vehicle battery charging; charging of electric vehicles; fueling of hydrogen gas for vehicles. Telecommunication services; communication services by satellite; communication via computer terminals, by digital transmission or by satellite; provision of communication services by means of computers; communication by hertzian wave. Scientific and industrial research; laboratory services; research and development services in the field of engineering; research in the field of artificial intelligence; design and development of engineering products; development of industrial products; software design and development; design and development of computer hardware; maintenance of computer programs; software as a service [SaaS]; quantum computing; consulting services in the field of quantum computers and quantum computing; designing of electronic systems; design of mechanical, electromechanical and optoelectronic apparatus and instruments.

Abstract

This disclosure is directed toward a method for producing a solid-state battery layer structure. The method may include providing an anode layer comprising silicon, forming a plurality of nanowire structures including silicon and/or gallium nitride on the anode layer and depositing a solid electrolyte layer on the anode layer. In some examples, the method may also include depositing a cathode layer on the solid electrolyte layer, depositing a cathode current collector metal layer on the cathode layer, etching holes through the anode layer, filling the holes with an electrically conducting material; and depositing an anode current collector metal layer on a bottom surface of the anode layer.

IPC Classes  ?

• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
• H01M 4/04 - Processes of manufacture in general
• H01M 4/134 - Electrodes based on metals, Si or alloys
• H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
• H01M 4/66 - Selection of materials

Goods & Services

Apparatus and instruments for accumulating and storing electricity, namely, flow batteries, rechargeable batteries, accumulators, capacitors, supercapacitors, solar modules, solar hybrid modules and solar energy photovoltaic inverters; electric-car chargers, namely, vehicle charging stations for electric cars; chargers, namely, battery chargers, wireless chargers, portable power chargers, chargers for electric accumulators, chargers for smart phones and solar-powered battery chargers; electric charging cables; wireless chargers; artificial intelligence apparatus, namely, robotical electrical control apparatus, namely, electrical controllers, electric control devices for energy management, electronic control systems for engines and machines, simulators for steering, driving or control of vehicles, control valves for regulating the flow of gases and liquids, and electronic control gears for LED lamps and lamp fixtures; artificial intelligence apparatus, namely, robotic assistants and robotics, being humanoid robots with artificial intelligence for use in scientific research and laboratory robots; artificial intelligence apparatus, namely, digital assistants being personal digital assistant computers and personal digital assistants, personal digital assistants featuring downloadable and recorded virtual assistant software; artificial intelligence apparatus, namely, machine-to-machine (M2M) applications being electric meters, smart meters, smart home meters, vehicle telemetry meters, vehicle telemetry sender and receiver transmitters, RFID readers and lidar apparatus; artificial intelligence apparatus, namely, wearable digital electronic communication devices, being wearable computers in the nature of wearable fitness trackers and wearable fitness trackers in the nature of armbands, smartwatches and smart glasses, wearable activity trackers and Radio Frequency Identification (RFID) tags; artificial intelligence apparatus, namely, electronic tracking apparatus and instruments being automatic solar tracking sensors, and energy submeters for tracking and monitoring energy usage, and global positioning instruments; computers and computer hardware; downloadable and recorded software for integrating and developing computer systems, applications and databases, for wireless content delivery, for controlling and managing access server applications, for document management and database management, for processing digital images, graphics and text, for organizing and viewing digital images, for creating searchable databases of information and data; downloadable and recorded computer software using artificial intelligence for machine learning; downloadable and recorded computer software using artificial intelligence for control and management of vehicles, satellites, energy equipment and solar energy equipment; downloadable and recorded application software for computer system, application and database application, integration and development, for wireless content delivery, for controlling and managing access server applications, for document management and database management, for processing digital images, graphics and text, for organizing and viewing digital images, for creating searchable databases of information and data; batteries; batteries for vehicles; chargers for electric batteries; apparatus to charge electric batteries, being battery charge devices; wireless chargers for batteries; microprocessors; processors being central processing units; transistors being electronic; semi-conductors; electrical and electronic components, in the nature of connectors, relays, switches, resistors, semiconductors, integrated circuits and transistors; electronic chips being 5G chips, power chips and AI chips, and chips for the manufacture of electronic circuits; electronic memory integrated circuit chips being computer chips, namely, dynamic random access memory chips, microprocessor units being microprocessors, application specific integrated circuits, digital signal processors and programmable memory chips; silicon chips; silicon wafers; cards encoded with security features for identification purposes; satellite navigational apparatus, being satellite-aided navigation systems and satellite navigational system, namely, a global positioning system (GPS); satellite transceivers; gas sensors for measuring gas concentration; telecommunications equipment, namely, automatic switching apparatus, switches, computer hardware for telecommunications, base stations, exchangers, multiplexers, transmitters, fiber-optic transceivers, repeaters, converters, optimizers and adapters, namely, electrical adapters, power adapters, power supply adaptors for use with portable electronic devices, wireless adapters for electronics, computer network adapters, ethernet adapters; devices for telecommunications being cell phones, semiconductor chip sets, modems, network routers, gateway routers, computer network interface devices, satellite electronics in the nature of satellite aerials, satellite processors, satellite transmitters, receivers and transceivers, alarm, sensor, and power management devices and infrastructure equipment in the nature of input and output devices, namely, microphones, loudspeakers, communication hubs, computer network bridges, signal processors, downloadable and recorded software for controlling networked devices; light-emitting diodes (LEDs); organic light-emitting diodes (OLED); silicon carbide diodes; electric motor checking monitoring and supervision apparatus, namely, control units for monitoring electrical motors, electronic power units for monitoring electric motors, and apparatus for monitoring motor circuits, stators and rotors, resistance monitoring apparatus, contamination monitoring apparatus, and insulation monitoring apparatus; loudspeakers; microelectronic components, in the nature of electronic inductors, electronic resistors, diodes, and electric conductors; downloadable and recorded virtual and augmented reality computer operating software for virtual environments and virtual worlds, and for enhancement of the real world for the purpose of adding digital elements over real-world views; downloadable and recorded electromechanical software, for electromechanical engineering design and design of electrical and mechanical components Plug-in electric cars; geared electric motors for land vehicles; electric motors for motor cars; electric motors for two-wheeled vehicles; parts and fittings for vehicles, other than tyres, wheels, rims and inner tubes, being anti-theft devices for vehicles, security devices for vehicles in the nature of security alarms for vehicles, anti-theft devices for vehicles, and safety devices and equipment for vehicles in the nature of air bags, safety seats for use in vehicles, safety belts for vehicle seats, and seat safety harnesses for vehicles

Abstract

There is provided a vertical high-electron-mobility transistor, HEMT (100), comprising: a drain contact(410), a nanowire layer (500) arranged on the drain contact (410) and comprising at least one vertical nanowire (510)and a supporting material (520) laterally enclosing the at least one vertical nanowire (510), a heterostructure (600) arranged on the nanowire layer and comprising an AIGaN-layer (610) and a GaN-layer (620) together forming a heterojunction, at least one source contact (420a, 420b) in contact with the heterostructure (600), and a gate contact (430) in contact with the heterostructure (600), arranged above the at least one vertical nanowire (510), wherein the at least one vertical nanowire (510) is forming an electron transport channel between the drain contact and the heterostructure. There is also provided a method for producing a vertical HEMT (100).

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 21/338 - Field-effect transistors with a Schottky gate
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

Abstract

There is provided an induction machine (100) comprising a rotor (120); a stator (140); and a phase-shift oscillator (160). The stator comprises: a first winding (141); and a second winding (142), arranged at a first angle (101) relative to said first winding. The phase-shift oscillator comprises: a transistor (170), the transistor (170) being a high-electron mobility transistor, HEMT; and a phase-shift network (180). The first winding is connected to a first node (181) of the phase-shift network and wherein the second winding is connected to a second node (182) of the phase-shift network, wherein the phase-shift oscillator is configured to provide a first phase electric signal at the first node and a second phase electric signal at the second node, wherein a difference between the first and second phase corresponds to the first angle. There is also provided an electric aircraft propulsion system comprising the induction machine.

IPC Classes  ?

• H02P 1/26 - Arrangements for starting electric motors or dynamo-electric converters for starting dynamo-electric motors or dynamo-electric converters for starting an individual polyphase induction motor
• H02P 25/16 - Arrangements or methods for the control of AC motors characterised by the kind of AC motor or by structural details characterised by the circuit arrangement or by the kind of wiring
• H02P 1/42 - Arrangements for starting electric motors or dynamo-electric converters for starting dynamo-electric motors or dynamo-electric converters for starting an individual single-phase induction motor

Abstract

A reinforced thin-film device (100, 200, 500) including a substrate (101) having a top surface for supporting an epilayer; a mask layer (103) patterned with a plurality of nanosize cavities (102, 102′) disposed on said substrate (101) to form a needle pad; a thin-film (105) of lattice-mismatched semiconductor disposed on said mask layer (103), wherein said thin-film (105) comprises a plurality of in parallel spaced semiconductor needles (104, 204) of said lattice-mismatched semiconductor embedded in said thin-film (105), wherein said plurality of semiconductor needles (104, 204) are substantially vertically disposed in the axial direction toward said substrate (101) in said plurality of nanosize cavities (102, 102′) of said mask layer (103), and where a lattice-mismatched semiconductor epilayer (106) is provided on said thin-film supported thereby.

IPC Classes  ?

• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/775 - Field-effect transistors with one-dimensional charge carrier gas channel, e.g. quantum wire FET
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 39/08 - Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the shape of the element
• H01L 39/12 - Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the material
• H01L 39/22 - Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
• G06N 10/00 - Quantum computing, i.e. information processing based on quantum-mechanical phenomena
• G01N 27/414 - Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Goods & Services

Apparatus and instruments for accumulating and storing electricity; electric-car charger; chargers; electric charging cables; wireless chargers; artificial intelligence apparatus; computers and computer hardware; software; artificial intelligence and machine learning software; artificial intelligence software for vehicles; application software; batteries; batteries for vehicles; chargers for electric batteries; apparatus to charge electric batteries; wireless chargers for batteries; microprocessors; processors [central processing units]; transistors [electronic]; semi-conductors; electrical and electronic components; electronic chips [electronic components]; electronic memory integrated circuit chips; silicon chips; silicon wafers; cards encoded with security features for identification purposes; satellite navigational apparatus; satellite transceivers; gas sensors; telecommunications equipment; devices for telecommunications; light-emitting diodes [LED]; organic light-emitting diodes [OLED]; silicon carbide diodes; electric motor checking [monitoring or supervision] apparatus; loudspeakers; microelectronic components; virtual and augmented reality software; electromechanical software. Plug-in electric cars; geared electric motors for land vehicles; electric motors for motor cars; electric motors for two-wheeled vehicles; parts and fittings for vehicles, other than tyres, wheels, rims and inner tubes. Vehicle repair, maintenance, refueling and recharging, other than repair, maintenance and installation of tyres, wheels, rims, inner tubes, tyres sensors; vehicle battery charging; charging of electric vehicles. Telecommunication services; communication services by satellite; communication via computer terminals, by digital transmission or by satellite; provision of communication services by means of computers; communication by hertzian wave. Scientific and industrial research; laboratory services; research and development services in the field of engineering; research in the field of artificial intelligence; design and development of engineering products; development of industrial products; software design and development; design and development of computer hardware; software as a service [SaaS]; designing of electronic systems; design of mechanical, electromechanical and optoelectronic apparatus and instruments.

Abstract

yy-1xx-1xx-1-1N layer structure is arranged to vertically and laterally enclose the vertical nanowire structures. There is also provided an AI processing system comprising said FPGA device (100).

IPC Classes  ?

• H03K 19/17724 - Structural details of logic blocks
• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

Abstract

There is provided a solid-state battery layer structure which may include an anode current collector metal layer, an anode layer arranged on the anode current collector metal layer, a solid electrolyte layer arranged on the anode layer laterally, a cathode layer arranged on the solid electrolyte layer, and a cathode current collector metal layer, and a plurality of nanowire structures comprising silicon and/or gallium nitride, wherein said nanowire structures are arranged on the anode layer and, wherein said nanowire structures are laterally and vertically enclosed by the solid electrolyte layer, wherein the anode layer comprises silicon and a plurality of metal vias connecting the plurality of nanowire structures with the anode current collector metal layer. Methods for producing solid-state battery layer structures are also provided.

IPC Classes  ?

• H01M 4/134 - Electrodes based on metals, Si or alloys
• H01M 4/66 - Selection of materials
• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
• H01M 4/04 - Processes of manufacture in general
• H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
• H01M 4/02 - Electrodes composed of, or comprising, active material

Abstract

There is provided a monolithic microwave integrated circuit, MMIC, front-end module (100) comprising: a gallium nitride structure (110) supported by a silicon substrate (120); a silicon-based transmit/receive switch (130) having a transmit mode and a receive mode; a transmit amplifier (112) configured to amplify an outgoing signal to be transmitted by said MMIC front-end module, wherein said transmit amplifier is electrically connected (132) to said transmit/receive switch, wherein said transmit amplifier comprises a gallium nitride high-electron-mobility transistor, HEMT, (114) formed in said gallium nitride structure; and a receive amplifier (113) configured to amplify an incoming signal received by said MMIC front-end module, wherein said receive amplifier is electrically connected (133) to said transmit/receive switch, wherein said receive amplifier comprises a gallium nitride HEMT (115) formed in said gallium nitride structure.

IPC Classes  ?

• H01L 21/8258 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by , , or
• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H03F 3/195 - High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
• H01L 27/085 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
• H03F 3/24 - Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages

Abstract

There is provided a solid-state battery layer structure (100) comprising: an anode current collector metal layer (110); an anode layer (120) arranged on the anode current collector metal layer; a solid electrolyte layer (140) arranged on the anode layer laterally; a cathode layer (150) arranged on the solid electrolyte layer; and a cathode current collector metal layer (160), and a plurality of nanowire structures (130) comprising silicon and/or gallium nitride, wherein said nanowire structures (130) are arranged on the anode layer (120) and, wherein said nanowire structures (130) are laterally and vertically enclosed by the solid electrolyte layer (140), wherein the anode layer comprises silicon and a plurality of metal vias (224) connecting the plurality of nanowire structures with the anode current collector metal layer (110). Methods for producing solid-state battery layer structures are also provided.

IPC Classes  ?

• H01M 4/04 - Processes of manufacture in general
• H01M 4/134 - Electrodes based on metals, Si or alloys
• H01M 4/1395 - Processes of manufacture of electrodes based on metals, Si or alloys
• H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
• H01M 4/66 - Selection of materials
• H01M 4/70 - Carriers or collectors characterised by shape or form
• H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
• H01M 10/0562 - Solid materials
• H01M 10/058 - Construction or manufacture
• H01M 4/75 - Wires, rods, or strips
• H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
• H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy

Abstract

There is provided a semiconductor layer structure (100) comprising: a Si substrate (102) having a top surface (104); a first semiconductor layer (110) arranged on said substrate, the first semiconductor layer comprising a plurality of vertical nanowire structures (112) arranged perpendicularly to said top surface of said substrate, the first semiconductor layer comprising AlN; a second semiconductor layer (120) arranged on said first semiconductor layer laterally and vertically enclosing said nanowire structures, the second semiconductor layer comprising AlxGa1-xN, wherein 0≤x≤0.95; a third semiconductor layer (130) arranged on said second semiconductor layer, the third semiconductor layer comprising AlyGa1-yN, wherein 0≤y≤0.95; and a fourth semiconductor layer (140) arranged on said third semiconductor layer, the fourth semiconductor layer comprising GaN. There is also provided a high-electron-mobility transistor device and methods of producing such structures and devices.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
• H01L 21/338 - Field-effect transistors with a Schottky gate
• H01L 21/337 - Field-effect transistors with a PN junction gate
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

Abstract

There is provided an AC-DC converter circuit (100) for high power charging of an electrical battery. The circuit comprises an input rectifier comprising a first node and a second node. The input rectifier (110) is configured to receive an AC voltage at the first node (112) and provide a rectified voltage at the second node (114). The circuit further comprises a first transistor (120), comprising a first gate node (122), a first source node (124), and a first drain node (126). The first drain node is connected to the second node of the input rectifier. The first gate node is connected to a ground node (170). The circuit further comprises a second transistor (130), comprising a second gate node (132), a second source node (134), and a second drain node (136). The second drain node is connected to the first source node. The second transistor materially corresponds to the first transistor. The circuit further comprises a duty cycle control unit (140) connected to the second gate node for providing the second transistor with a switching waveform. The circuit further comprises an output rectifier (150) connected to the second source node or the first source node. The circuit further comprises an output electronic filter (160) connected to the second source node or an output node (151) of the output rectifier. An AC-DC converter device, a method for charging an electrical battery, and a regenerative braking system is also provided.

IPC Classes  ?

• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• H01L 29/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor bodies or of electrodes thereof
• H03K 17/00 - Electronic switching or gating, i.e. not by contact-making and -breaking
• H02M 1/00 - Details of apparatus for conversion
• H02M 7/06 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
• H03K 17/16 - Modifications for eliminating interference voltages or currents
• H03K 17/10 - Modifications for increasing the maximum permissible switched voltage

Goods & Services

Apparatus and instruments for accumulating and storing electricity; electric-car charger; chargers; electric charging cables; wireless chargers; artificial intelligence apparatus; computers and computer hardware; software; artificial intelligence and machine learning software; artificial intelligence software for vehicles; application software; batteries; batteries for vehicles; chargers for electric batteries; apparatus to charge electric batteries; wireless chargers for batteries; microprocessors; processors [central processing units]; transistors [electronic]; semi-conductors; electrical and electronic components; electronic chips [electronic components]; electronic memory integrated circuit chips; silicon chips; silicon wafers; cards encoded with security features for identification purposes; gas sensors; telecommunications equipment; devices for telecommunications; light-emitting diodes [LED]; organic light-emitting diodes [OLED]; silicon carbide diodes; electric motor checking [monitoring or supervision] apparatus; loudspeakers; microelectronic components; virtual and augmented reality software; electromechanical software; none of the aforesaid goods encompassing or using Global Navigation Satellite System (GNSS) or Inertial Navigation System (INS). Plug-in electric cars; geared electric motors for land vehicles; electric motors for motor cars; electric motors for two-wheeled vehicles; parts and fittings for vehicles. Vehicle repair, maintenance, refuelling and recharging; vehicle battery charging; charging of electric vehicles. Telecommunication services; communication services by satellite; communication via computer terminals, by digital transmission or by satellite; provision of communication services by means of computers; communication by hertzian wave; none of the aforesaid services using Global Navigation Satellite System (GNSS) or Inertial Navigation System (INS). Scientific and industrial research; laboratory services; research and development services in the field of engineering; research in the field of artificial intelligence; design and development of engineering products; development of industrial products; software design and development; design and development of computer hardware; software as a service [SaaS]; designing of electronic systems; design of mechanical, electromechanical and optoelectronic apparatus and instruments; none of the aforesaid services using Global Navigation Satellite System (GNSS) or Inertial Navigation System (INS).

Abstract

A reinforced thin-film device (100, 200, 500) including a substrate (101) having a top surface for supporting an epilayer; a mask layer (103) patterned with a plurality of nanosize cavities (102, 102') disposed on said substrate (101) to form a needle pad; a thin-film (105) of lattice-mismatched semiconductor disposed on said mask layer (103), wherein said thin-film (105) comprises a plurality of in parallel spaced semiconductor needles (104, 204) of said lattice-mismatched semiconductor embedded in said thin-film (105), wherein said plurality of semiconductor needles (104, 204) are substantially vertically disposed in the axial direction toward said substrate (101) in said plurality of nanosize cavities (102, 102') of said mask layer (103), and where a lattice-mismatched semiconductor epilayer (106) is provided on said thin-film supported thereby.

IPC Classes  ?

• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth