Disclosed is a susceptor which can operate with durability, even at a low or cryogenic temperature. The present invention provides a susceptor characterized by comprising: a base member; a ceramic plate having electrodes on the base member; and an electrode connector assembly for applying power to the electrodes of the ceramic plate through the base member. The electrode connector assembly comprises: a first connector terminal which is the end in contact with the electrodes; a second connector terminal which is the end where power is input; and a connector rod connecting the first connector terminal and the second connector terminal.
H01T 23/00 - Apparatus for generating ions to be introduced into non-enclosed gases, e.g. into the atmosphere
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
2.
SUSCEPTOR MANUFACTURING METHOD AND SUSCEPTOR MANUFACTURED BY THE SAME
The present disclosure relates to a method of manufacturing a susceptor. The present disclosure may provide a method of manufacturing a susceptor in which a cap-type bushing structure or tube structure is applied to a bonding structure of a base substrate and an insulating plate, so that the bonding structure can withstand or prevent the increase in pressure inside a gas flow path during a curing process, thereby preventing clogging of a gas hole in a high-power susceptor or the like for a high aspect ratio contact (HARC) processes, and minimizing the occurrence of arcing by reducing contamination around the gas hole. In addition, the present disclosure may also provide a susceptor manufactured by the method.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The present disclosure relates to a method of manufacturing a susceptor. The present disclosure may provide a method of manufacturing a susceptor in which a cap-type bushing structure or tube structure is applied to a bonding structure of a base substrate and an insulating plate, so that the bonding structure can withstand or prevent the increase in pressure inside a gas flow path during a curing process, thereby preventing clogging of a gas hole in a high-power susceptor or the like for a high aspect ratio contact (HARC) processes, and minimizing the occurrence of arcing by reducing contamination around the gas hole. In addition, the present disclosure may also provide a susceptor manufactured by the method.
The present invention relates to a ceramic susceptor. A method of manufacturing the ceramic susceptor of the present disclosure May include steps of: manufacturing a plurality of ceramic sheets each including a via hole and a conductor filling the via hole; stacking the plurality of ceramic sheets; and sintering the stack body obtained by the stacking. In the stacking step, the via hole in at least one ceramic sheet among the plurality of ceramic sheets may be disposed not to overlap the via hole in another ceramic sheet adjacent thereto.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B32B 3/26 - Layered products essentially comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products essentially having particular features of form characterised by a layer with cavities or internal voids
C04B 37/00 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The present disclosure relates to a ceramic susceptor, and the ceramic susceptor according to the present disclosure includes: an insulation plate on which an electrode is disposed; a shaft connected to the insulation plate; and a power supply rod connected to the electrode and extending through an inner space of the shaft, wherein the insulation plate includes a first through-passage formed through the upper surface and the lower surface thereof and configured to communicate the inner space of the shaft therewith.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
The present disclosure provides a susceptor including a base member and an electrostatic chuck plate bonded to the base member by an adhesive layer, wherein the adhesive layer includes a plurality of spacers made of a first elastomer, and an adhesive made of a second elastomer, the adhesive filling a space between the spacers and bonding the base material and the electrostatic chuck plate to each other.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is a ceramic susceptor, which includes a ceramic plate with a radio-frequency electrode disposed therein, wherein the ceramic plate includes a connector connected to the radio-frequency electrode, the ceramic susceptor includes a rod having one end connected to the connector to supply power to the radio-frequency electrode, and the rod employs Mo, W, or an alloy thereof as a base material and includes a metal nitride film containing Cr on the surface of the base material.
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the deposition of metallic material
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
8.
ELECTROSTATIC CHUCK HEATER AND MANUFACTURING METHOD THEREFOR
The present invention relates to an electrostatic chuck heater having a bipolar structure, the electrostatic chuck heater comprising: a heater body having an internal electrode and an external electrode for selectively performing any one of an RF grounding function and an electrostatic chuck function according to a semiconductor process mode; and a heater support mounted below the heater body so as to support the heater body.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B28B 11/24 - Apparatus or processes for treating or working the shaped articles for curing, setting or hardening
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The present disclosure relates to a substrate heating device capable of effectively suppressing the generation of cracks. The substrate heating device including: a body having a substrate seating element on which a substrate is seated, thereby supporting the substrate; a first heating element positioned in an inner area of the body; a second heating element positioned in an outer area surrounding the inner area of the body; a power transfer wire configured to transfer a current to the second heating element across the inner area of the body; a heater connector configured to supply a current to the power transfer wire; and a connector connecting element connected from the heater connector to the power transfer wire, wherein the connector connecting element is made of molybdenum-tungsten alloy including molybdenum and tungsten.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01R 4/58 - Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation characterised by the form or material of the contacting members
The present disclosure relates to a ceramic susceptor. The ceramic susceptor of the present disclosure may include a ceramic plate having a heating element disposed thereon and at least one hole. The heating element may include a plurality of concentric circular patterns, each of the concentric circular patterns may include arc portions extending in a circumferential direction and a transverse portion interconnecting the arc portions, and among the arc portions of the plurality of concentric circular patterns, each of the arc portions, which face each other across the hole, may include, in a portion thereof, a protrusion protruding toward the hole.
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The present disclosure relates to a ceramic susceptor. The ceramic susceptor of the present disclosure may include: an insulating plate in which a RF electrode is disposed; a shaft connected to the insulating plate at one end and comprising a separator at a remaining end; a connection mount having an upper portion connected to the remaining end of the shaft; a first rod and a second rod connected to the RF electrode and penetrating the separator to extend into the connection mount; and a connection member disposed in the connection mount and connecting the first rod and the second rod extending into the connection mount to a draw-in rod, wherein the connection member may include an elastic member configured to absorb a difference in deformation due to heat among the first rod, the second rod, and the draw-in rod.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges using radio frequency discharges
The present invention relates to a two-zone heating element which is embedded in a ceramic heater, the two-zone heating element comprising: first and second heating parts which can be independently controlled by a power supply device; a first non-heating part which is disposed between first and second sub-heating portions constituting the first heating part and electrically connects the first and second sub-heating portions to each other; and a second non-heating part which is disposed between the second heating part and a first electrode terminal and electrically connects the second heating part and the first electrode terminal to each other.
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
H05B 3/18 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
The present disclosure relates to an electrostatic chuck having an efficient cooling structure. The present disclosure provides an electrostatic chuck including a base substrate including a cooling water channel, and a plate configured to support a wafer on the base substrate and including a plate comprising a cooling gas hole configured to supply a cooling gas to the wafer. The base substrate includes a cooling water inlet and a cooling gas inlet in a center thereof, the plate is in communication with the cooling gas inlet of the base substrate and include a cooling gas hole configured to spray a cooling gas to the wafer, and the electrostatic chuck further includes a shaft abutting the base substrate along a circumference of a central portion of the base substrate including the cooling water inlet and the cooling gas inlet.
Disclosed are a susceptor for enabling uniform plasma treatment over the entire surface of a wafer, and a manufacturing method therefor. Provided is the susceptor comprising: a dielectric plate having an upper surface on which a wafer is loaded, and a lower surface facing same; and an inner RF electrode and an outer RF electrode that are buried in the dielectric plate, wherein, with respect to the lower surface, the height of a first plane in which the inner RF electrode is buried is less than the height of a second plane in which the outer RF electrode is buried.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The present invention relates to a ceramic heater. The ceramic heater of the present invention comprises: a heater plate in which a heating element is disposed and which is made of a ceramic material; a shaft which has a tubular shape with a through-hole and is coupled to the bottom surface of the heater plate and in which a rod for supplying power to the heating element through the through-hole is received; and a continuous or discontinuous air pocket which is provided in a joint with which the heater plate and the shaft come into contact and by which the heater plate and the shaft are coupled to each other, wherein the air pocket is formed along the joining surface of the joint.
H01L 21/06 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H05B 3/06 - Heater elements structurally combined with coupling elements or with holders
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed is a method for manufacturing a ceramic susceptor, the method including: preparing ceramic sheets; preparing a lamination structure of a molded body, in which the ceramic sheets are laminated and a conductive metal layer for electrodes is disposed between the ceramic sheet laminated products; and sintering the lamination structure of the molded body, wherein the preparing of the ceramic sheets includes: obtaining a vitrified first additive powder by heat-treating a slurry containing MgO, SiO2, and CaO; preparing a slurry by mixing an Al2O3 powder with the first additive powder, a second additive powder containing a MgO powder, and a third additive powder containing a Y2O3 powder; and forming the ceramic sheets by tape casting the slurry.
Disclosed is a susceptor which can operate with durability, even at a low or cryogenic temperature. The present invention provides a susceptor characterized by comprising: a base member; a ceramic plate having electrodes on the base member; and an electrode connector assembly for applying power to the electrodes of the ceramic plate through the base member. The electrode connector assembly comprises: a first connector terminal which is the end in contact with the electrodes; a second connector terminal which is the end where power is input; and a connector rod connecting the first connector terminal and the second connector terminal.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H02N 13/00 - Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
B23Q 3/15 - Devices for holding work using magnetic or electric force acting directly on the work
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The present disclosure relates to an electrostatic chuck. The electrostatic chuck according to the present disclosure may include a base substrate; an electrostatic chuck plate fixed on the base substrate, the electrostatic chuck plate having an electrode therein; and an electrode part disposed in a hole in the base substrate to supply power to the electrode, wherein the electrode part may include a housing inserted into the hole in the base substrate, an electrode rod passing through the inner wall of the housing such that one end thereof is in contact with the electrode; and an elastic support body configured to support the electrode rod at multiple points on the inner wall of the housing.
H01T 23/00 - Apparatus for generating ions to be introduced into non-enclosed gases, e.g. into the atmosphere
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
8 Ω·cm or more at 650° C., and the sintered body of the shaft is an AlN sintered body having a room-temperature thermal conductivity of 100 W/mK or less.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
20.
SUBSTRATE HEATING APPARATUS WITH ENHANCED TEMPERATURE UNIFORMITY CHARACTERISTIC
The present disclosure discloses a substrate heating apparatus for heating a substrate, wherein the substrate heating apparatus includes: a body including a substrate seating portion on which the substrate is seated, to support the substrate; a first heating element located in an inner region of the body; a second heating element located in an outer region surrounding the inner region; a third heating element configured to transmit current to the second heating element across the inner region of the body; and a connecting member electrically interconnecting the second heating element and the third heating element, wherein the connecting member is made of a molybdenum-tungsten alloy containing molybdenum and tungsten.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a ceramic susceptor. The ceramic susceptor of the present invention comprises a ceramic plate on which a radio frequency electrode is arranged, wherein the ceramic plate comprises a connector connected to the radio frequency electrode and comprises an electrode rod having one end connected to the connector so as to supply electric power to the radio frequency electrode, and the electrode rod uses Mo, W or an alloy thereof as a base material and comprises a metal nitride film on the surface of the base material.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H02N 13/00 - Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
B23Q 3/15 - Devices for holding work using magnetic or electric force acting directly on the work
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
C04B 35/581 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a ceramic heater with improved reliability, the ceramic heater including: a heater body having a mesh type high-frequency electrode, and an electrode rod connecting member being in contact with a lower surface of the high-frequency electrode; and a heater support mounted on a lower portion of the heater body and configured to support the heater body, in which the electrode rod connecting member is in area contact with one surface of the high-frequency electrode.
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
The present invention relates to a ceramic heater with improved reliability, comprising: a heater body provided with a high-frequency electrode made of a mesh type metal material, and an electrode rod connecting member that contacts the bottom surface of the high-frequency electrode; and a heater support that is mounted below the heater body and supports the heater body, wherein the high-frequency electrode comprises a first electrode member having a wire type mesh structure and a second electrode member having a sheet type mesh structure.
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
25.
Electrostatic chuck heater and manufacturing method therefor
The present invention relates to an electrostatic chuck heater having a bipolar structure, the electrostatic chuck heater comprising: a heater body having an internal electrode and an external electrode for selectively performing any one of an RF grounding function and an electrostatic chuck function according to a semiconductor process mode; and a heater support mounted below the heater body so as to support the heater body.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B28B 11/24 - Apparatus or processes for treating or working the shaped articles for curing, setting or hardening
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The present disclosure relates to a ceramic susceptor. The ceramic susceptor of the present disclosure includes: an insulating plate on which a high-frequency electrode is disposed; a shaft connected to the insulating plate; a connection mount connected to a longitudinal end of the shaft; a first rod and a second rod, which are connected to the high-frequency electrode, pass through the longitudinal end of the shaft, and extend to the connection mount; and a connection member disposed in the connection mount, wherein the connection member connects the first rod to the second rod.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
The present invention relates to a ceramic susceptor. The ceramic susceptor of the present invention comprises: an insulating plate having a high-frequency electrode disposed therein; a shaft connected to the insulating plate; a connection mount connected to the longitudinal end of the shaft; a first rod and a second rod connected to the high-frequency electrode, passing through the longitudinal end of the shaft, and extending into the connection mount; and a connection member disposed in the connection mount, wherein the connection member connects the first rod and the second rod to each other.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A bonding head comprises: a base block; an air block arranged on the base block; and a heating block arranged on the air block, and provided to generate heat and heat a chip, wherein the air block cools the heating block while using the air as a medium to suppress the transmission of the heat generated from the heating block to the base block.
The present invention relates to a ceramic heater. The ceramic heater of the present invention comprises: a heater plate in which a heating element or high-frequency electrode is disposed and which is made of a ceramic material and includes an opening, a thread formed at the inner circumferential surface of the opening, and a connector electrically connected to the heating element or high-frequency electrode and embedded in the bottom surface of the opening while being exposed; a support eyelet which is fastened through the thread; and an electrode rod for supplying power to the heating element or high-frequency electrode, the electrode rod comprising a first rod which is coupled to the inner side of the support eyelet and brazed at one end surface thereof to the connector by means of a first conductive filler, and a second rod which is brazed to the other end surface of the first rod by means of a second conductive filler, wherein the gaps between both ends of the support eyelet and the outer circumferential surface of the first rod are sealed by the respective conductive fillers.
H05B 3/08 - Heater elements structurally combined with coupling elements or with holders having electric connections specially adapted for high temperatures
H05B 3/18 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a ceramic heater. The ceramic heater of the present invention comprises: a heater plate in which a heating element is disposed and which is made of a ceramic material; a shaft which has a tubular shape with a through-hole and is coupled to the bottom surface of the heater plate and in which a rod for supplying power to the heating element through the through-hole is received; and a continuous or discontinuous air pocket which is provided in a joint with which the heater plate and the shaft come into contact and by which the heater plate and the shaft are coupled to each other, wherein the air pocket is formed along the joining surface of the joint.
H05B 3/68 - Heating arrangements specially adapted for cooking plates or analogous hot-plates
H05B 3/18 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
C04B 35/581 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed are a susceptor for enabling uniform plasma treatment over the entire surface of a wafer, and a manufacturing method therefor. Provided is the susceptor comprising: a dielectric plate having an upper surface on which a wafer is loaded, and a lower surface facing same; and an inner RF electrode and an outer RF electrode that are buried into the dielectric plate, wherein, with respect to the lower surface, the height of a first plane in which the inner RF electrode is buried is less than the height of a second plane in which the outer RF electrode is buried.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H02N 13/00 - Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
B23Q 3/15 - Devices for holding work using magnetic or electric force acting directly on the work
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A ceramic heater includes a heating element, and the ceramic heater is characterized in that connecting portions connecting concentric circumferences of the heating element included in the ceramic heater are formed such that symmetrical axes of pairs of the connecting portions do not pass through a center of the heating element.
H05B 3/06 - Heater elements structurally combined with coupling elements or with holders
H05B 3/12 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
H05B 3/22 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
33.
CERAMIC HEATER FOR INDEPENDENTLY CONTROLLING MIDDLE REGION
The present invention relates to a ceramic heater for independently controlling a middle region, and more specifically, to a ceramic heater comprising: a center-edge heating element provided at a position corresponding to a center region and an edge region of a heating surface of the ceramic heater; and a middle heating element provided at a position corresponding to a middle region which is surrounded by the center region and the edge region of the heating surface of the ceramic heater, and thus the present invention has an effect whereby the respective temperatures of three divided regions may be
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
The present disclosure relates to a method for manufacturing a ceramic heater. The method for manufacturing a ceramic heater according to the present disclosure comprises: separately charging a ceramic powder into a center portion and multiple split edge portions in a formation mold and leveling the charged ceramic powder; manufacturing a molded body or pre-sintered body of the ceramic powder from the leveled ceramic powder; disposing a high-frequency electrode or a heating element on the molded body or pre-sintered body of the ceramic powder and filling a second ceramic powder; and integrally sintering the molded body or pre-sintered body of the ceramic powder and the second ceramic powder.
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
35.
Electrostatic chuck heater and manufacturing method therefor
The present invention relates to an electrostatic chuck heater and a manufacturing method therefor and, more particularly, to an electrostatic chuck heater comprising: a ground electrode; and an electrostatic chuck electrode spaced a predetermined distance apart from the outside of the ground electrode, wherein the heater can reduce the phenomenon of rising of a wafer edge and thus can significantly reduce the temperature deviation according to positions on a heating surface of an object, such as a wafer, so as to increase the temperature uniformity of the heating surface.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed is an electro static chuck. Disclosed is an electro static chuck which includes: a base substrate; and an electro static chuck plate fixed onto the base substrate and including a plurality of electrodes to which biases for chucking and dechucking are applied, in which the plurality of electrodes includes a spiral pattern extending from a start point of an edge of the electro static chuck plate toward an end point of a center and a rotational angle of the spiral pattern is 360°n (n is a real number of 1 to 2).
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Disclosed is an electrostatic chuck with a cooling structure using a cooling gas. The electrostatic chuck comprises: an electrostatic chuck plate that includes a plurality of first cooling gas holes formed in a first region and a plurality of second cooling gas holes formed in a second region; and a base member that includes a first flow path pattern connected to the plurality of first cooling gas holes, a second flow path pattern connected to the plurality of second cooling gas holes, and an inlet moving pattern changing a position of an inlet of a cooling gas injected into the first flow path pattern.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a ceramic heater having improved reliability, comprising: a heater body part having a mesh-type high-frequency electrode and an electrode rod connecting member in contact with the lower surface of the high frequency electrode; and a heater support part mounted on the lower portion of the heater body part so as to support the heater body part, wherein the electrode rod connecting member is in surface contact with one surface of the high frequency electrode.
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
The present invention relates to a ceramic heater with improved reliability, comprising: a heater body part provided with a high frequency electrode formed of a mesh type metal material, and an electrode rod connecting member that contacts the bottom surface of the high frequency electrode; and a heater support part that is mounted below the heater body part and supports the heater body part, wherein the high frequency electrode comprises a first electrode member having a wire type mesh structure and a second electrode member having a sheet type mesh structure.
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
Disclosed is a ceramic heater and a ceramic plate for a ceramic heater, wherein, in order to prevent crack development at a ceramic surface around an electrode part and thereby improve durability, the end of a support part for an electrode rod is spaced apart from the ceramic surface opposite thereto, and a space for placing a filler mass is provided around the end of the support part for the electrode rod, whereby force or stress applied to the ceramic surface due to the expansion of the support part or by the filler mass is removed.
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
41.
ELECTROSTATIC CHUCK HEATER AND MANUFACTURING METHOD THEREFOR
The present invention relates to an electrostatic chuck heater having a bipolar structure, the electrostatic chuck heater comprising: a heater body having an internal electrode and an external electrode for selectively performing an RF grounding function and/or an electrostatic chuck function according to a semiconductor process mode; and a heater support mounted below the heater body so as to support the heater body.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H02N 13/00 - Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
B23Q 3/15 - Devices for holding work using magnetic or electric force acting directly on the work
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The present invention relates to a connection member for a ceramic heater and, more specifically, to a connection member which is included in a ceramic plate so as to electrically connect a power supply member to a molybdenum mesh, wherein the area of one surface of the connection member where the connection member comes into contact with the molybdenum mesh included in the ceramic plate is larger than the area of the other surface of the connection member where the connection member comes into contact with the power supply member. The connection member provided by the present invention has a structural advantage in that when bonding abnormality is checked by pulling the power supply member during a maintenance process of the ceramic heater or when the maintenance work requires separation of the power supply member, the connection member is not separated along with the power supply member, and can be fixed inside the ceramic member while being in contact with the molybdenum mesh.
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
H05B 3/46 - Heating elements having the shape of rods or tubes non-flexible heating conductor mounted on insulating base
43.
Aluminum nitride sintered body and member for semiconductor manufacuting apparatus comprising same
3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
C04B 35/581 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a ceramic heater and, more specifically, to a ceramic heater (100) characterized in that connecting portions connecting concentric circumferences of a heating element (400) included in the ceramic heater (100) are formed such that the symmetrical axes of pairs of connecting portions do not pass through the center (420) of the heating element (400). The present invention has the benefit of providing a ceramic heater (100) in which the heating surface of a ceramic plate has improved temperature uniformity as a result of the reduction of a low temperature region of the heating element included in the ceramic heater. In addition, the present invention has the benefit of providing a ceramic heater (100) in which the heating surface of a ceramic plate has improved temperature uniformity by only changing the design of the structure of the connecting portions connecting the concentric circumferences of the heating element (400) without adding an additional device.
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
H05B 3/12 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
H05B 3/68 - Heating arrangements specially adapted for cooking plates or analogous hot-plates
45.
CERAMIC HEATER FOR INDEPENDENTLY CONTROLLING MIDDLE REGION
The present invention relates to a ceramic heater for independently controlling a middle region, and more specifically, to a ceramic heater comprising: a center-edge heating element provided at a position corresponding to a center region and an edge region of a heating surface of the ceramic heater; and a middle heating element provided at a position corresponding to a middle region which is surrounded by the center region and the edge region of the heating surface of the ceramic heater, and thus the present invention has an effect whereby the respective temperatures of three divided regions may be controlled by two power devices.
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
H05B 3/18 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
46.
Substrate heating apparatus with enhanced temperature uniformity characteristic
The present invention relates to a substrate heating apparatus. More specifically, the present invention relates to a substrate heating apparatus including a first heating element located in an inner region of the substrate heating apparatus, a second heating element located in an outer region, and a third heating element supplying current to the second heating element passing through the inner region, wherein the diameter of a wire constituting the third heating element is thicker than the diameter of a wire constituting the second heating element, thereby inhibiting the generation of an overheating region by the heating of the third heating element.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 14/54 - Controlling or regulating the coating process
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
47.
Method of manufacturing multilayer ceramic substrates
In a method of manufacturing a multilayer ceramic substrate, first and second sheet stacks are formed by pressurizing a plurality of unsintered ceramic sheets, respectively. A hole is formed to penetrate through the second sheet stack. A third preliminary sheet stack is formed by positioning the second sheet stack on the first sheet stack. First and second thin films are formed at top and bottom of the third preliminary sheet stack, respectively. A third sheet stack is formed by pressurizing the first and the second thin films and the third preliminary sheet stack. The first and the second thin films are removed from the third sheet stack, thereby forming a preliminary multilayer ceramic substrate. The preliminary multilayer ceramic substrate is sintered. Accordingly, the reliability and stability of the manufacturing process for the multilayer ceramic substrate is sufficiently improved with reduced cost due to the flat molds and thin films.
15 Ωcm or more at a normal temperature and a relative density of 99% or more. The sintered body is obtained by sintering the powders and then cooling the sintered powders or sintering the powders and then cooling the sintered powders with annealing the sintered powders during the cooling.
C04B 35/581 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
49.
High dense sintered body of aluminum nitride, method for preparing the same and member for manufacturing semiconductor using the sintered body
The present invention provide a high dense aluminum nitride sintered body, a preparing method thereof, and a member for manufacturing semiconductor using the sintered body which has excellent leakage current characteristic, enough adsorbing property, good detachment property and excellent thermal conductivity and so can be applied to even a member for manufacturing semiconductor requiring high volume resistivity like the coulomb type electrostatic chucks as well as the Johnsen-Rahbek type electrostatic chucks.
C04B 35/581 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
patents
