A CMOS integrated chip (1) comprising a time-to-digital converter, TDC, circuit (2) for light detection and ranging, lidar, applications, comprises a start channel (10) comprising an input (11) for a start signal (ST), and at least one stop channel (20, 30) comprising an input (21, 31) for a stop signal (SP). It further comprises a TDC element (40) for each of the start and stop channels (10, 20, 30), wherein the TDC element (40) is configured to store respective counts when triggered by the start signal (ST) or the stop signal (SP), respectively. It further comprises a calculation unit (50) coupled to each TDC element (40) and configured to determine a time difference (ΔT) associated with the start signal (ST) and the stop signal 8SP) based on the counts, and an instruction driven communication interface (60) comprising at least two bidirectional data pins (63, 64). Further, a time-of-flight measurement system and a method of operating the CMOS integrated chip (1) is provided.
A sensor module with the following features is provided: - a connection carrier (14), - a sensor (1) arranged on the connection carrier (14), - a sensor cap (3) surrounding the connection carrier (14) and/or the sensor (1) at least partially. Further, a method for manufacturing a sensor module is provided.
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
3.
Arrangement and method for calibrating temperature sensors
In an embodiment a method for calibrating temperature sensors includes arranging devices-under-test (DUTs) in a sealable and thermally isolated chamber of a calibration arrangement such that each of the DUTs is in proximity to, associated to and in thermal contact with at least one of a number of reference samples, controlling the calibration arrangement to thermalize the DUTs and the reference samples to a temperature set point and generating, based on a temperature-dependent quantity, a set of measurement signals for each of the DUTs, wherein each set of measurement signals comprises a test measurement signal from a distinct one of the DUTs and a reference measurement signal from each of an associated at least one of the reference samples.
G01K 15/00 - Testing or calibrating of thermometers
G01R 31/69 - Testing of releasable connections, e.g. of terminals mounted on a printed circuit board of terminals at the end of a cable or a wire harnessTesting of releasable connections, e.g. of terminals mounted on a printed circuit board of plugsTesting of releasable connections, e.g. of terminals mounted on a printed circuit board of sockets, e.g. wall sockets or power sockets in appliances
G01K 5/28 - Measuring temperature based on the expansion or contraction of a material the material being a gas
4.
Attachment of Stress Sensitive Integrated Circuit Dies
In an embodiment, a semiconductor package includes a support and a stack of two or more semiconductor dies, the stack including an upper die and further including a lower die attached to the support by adhesive on a backside of the lower die, wherein the adhesive covers only part of the backside of the lower die, and wherein the adhesive has a plurality of non-contiguous regions on the backside of the lower die.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
5.
Ultrasonic flow meter and method for ultrasonic flow metering
In an embodiment an ultrasonic flow meter includes a first transducer and a second transducer, a first impedance circuit and a second impedance circuit, each of the first and second impedance circuits having a variable impedance, a first terminal coupled to the first transducer via the first impedance circuit, a second terminal coupled to the second transducer via the second impedance circuit, a signal generator with a signal output and a signal evaluation circuit with a signal input, wherein the signal output and the signal input are coupled to the first and second terminals, and wherein the signal evaluation circuit includes a time-to-digital converter and a first comparator that couples the signal input to a first input of the time-to-digital converter, and a control circuit that is coupled to the signal generator, the signal evaluation circuit and the variable impedance.
In an embodiment, an integrated MEMS transducer device includes a substrate body having a first electrode on a substrate, an etch stop layer located on a surface of the substrate, a suspended micro-electro-mechanical systems (MEMS) diaphragm with a second electrode, an anchor structure with anchors connecting the MEMS diaphragm to the substrate body and a sacrificial layer in between the anchors of the anchor structure, the sacrificial layer including a first sub-layer of a first material, wherein the first sub-layer is arranged on the etch stop layer, a second sub-layer of a second material, wherein the second sub-layer is arranged on the first sub-layer, and wherein the first and the second material are different materials.
In an embodiment a sensor arrangement includes a sensor die having a contact area, a suspended area and a sensitive element located in the suspended area, an interposer including at least two vias connecting a first side of the interposer to a second side of the interposer and a support mechanically and electrically connecting the contact area of the sensor die to the first side of the interposer, the support including at least two contact joints.
In an embodiment an electric circuitry includes at least one first ring oscillator and at least one second ring oscillator being arranged on a substrate in different orientations, a time-to-digital converter having a converter ring oscillator and a processing circuit, wherein a first time is determined by a period duration of at least one first ring oscillator, this period duration depending on the propagation delay time of first delay elements, wherein a second time is determined by a period duration of at least one second ring oscillator, this period duration depending on the propagation delay time of second delay elements, and wherein the processing circuit is configured to determine a magnitude of the strain applied on the substrate based on a first state of the converter ring oscillator at the first time and a second state of the converter ring oscillator the second time.
G01L 1/18 - Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
G01B 7/16 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
9.
Pressure Sensor Device and Method for Forming a Pressure Sensor Device
In an embodiment a method for forming a pressure sensor device includes providing a pressure sensor on a substrate body, the pressure sensor comprising a membrane, depositing a top layer on top of the substrate body and the pressure sensor, connecting a cap body with the top layer, a mass of the cap body being approximately equal to a mass of the substrate body and introducing at least one opening in the cap body.
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
G01L 19/04 - Means for compensating for effects of changes of temperature
G01L 7/08 - Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
10.
Sensor device and method for operating a sensor device
A sensor device includes a first sensor including a heating element configured to heat up the first sensor in a controllable manner and a second sensor thermally coupled to the heating element of the first sensor such that the heating element is further configured to heat up the second sensor in a controllable manner.
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
11.
Sensor operable to measure ozone concentration and a method for using a sensor
In an embodiment a sensor includes an outer housing, an inner housing disposed within an interior of the outer housing or connected to the interior of the outer housing, an ozone sensing component disposed within an interior of the inner housing, an ozone modifying component disposed within the interior of the outer housing, a substrate on which the ozone sensing component and the ozone modifying component are disposed, a first inlet integrated into the outer housing, the first inlet being configured to conduct ambient gaseous matter from an outside of the outer housing into the interior of the outer housing and a second inlet integrated into the inner housing, the second inlet being configured to conduct the gaseous matter from the interior of the outer housing into the interior of the inner housing and adjacent to the ozone sensing component, wherein the ozone sensing component is configured to generate a sensing component signal corresponding to an ozone concentration of the gaseous matter within the interior of the inner housing, and wherein the ozone modifying component is configured to alter the ozone concentration of the gaseous matter within the interior of the outer housing.
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 1/38 - Diluting, dispersing or mixing samples
G01N 1/44 - Sample treatment involving radiation, e.g. heat
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
12.
Circuit arrangement and sensor arrangements including the same
A circuit arrangement comprises a first branch comprising a resistor of variable resistance and a diode-connected bipolar transistor and a second branch comprising a resistor of fixed resistance and another diode-connected bipolar transistor. A control loop reproduces a voltage drop at the resistor of variable resistance to a voltage drop at the resistor of fixed resistance. Output terminals are connected to the bipolar transistors to supply a differential voltage. The circuit arrangement may be used as an analog frontend circuit in a gas sensor or a temperature sensor arrangement.
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01K 7/20 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit
H03K 17/60 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being bipolar transistors
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
13.
Time of flight detecting method for a phase shifted signal train including a sequence of waves inserted between a first group and a second group
In an embodiment a method includes transmitting a signal train through a medium, wherein the signal train includes a sequence of waves of a first group and of a second group, the first and second groups being shifted in a time domain according to a predetermined phase shift, receiving the signal train as a received signal train and as a function of time, detecting a phase shift in the received signal train, assigning wave periods of the received signal train to respective wave periods of the first group using the detected phase shift as reference and determining a sequence of time-of-flight signals from the sequence of waves of the first group and the assigned wave periods of the received signal train, respectively.
G01F 1/66 - Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by measuring frequency, phase shift or propagation time of electromagnetic or other waves, e.g. using ultrasonic flowmeters
G01F 1/667 - Arrangements of transducers for ultrasonic flowmetersCircuits for operating ultrasonic flowmeters
G01P 5/24 - Measuring speed of fluids, e.g. of air streamMeasuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring the direct influence of the streaming fluid on the properties of a detecting acoustical wave
14.
Electric circuit arrangement to control current generation
In an embodiment an electric circuit arrangement includes a current generator circuit having a first output terminal and configured to generate an output current, a controller configured to generate control signals to control the current generator circuit, a random code generator configured to generate random codes and a counter configured to generate a count, wherein the current generator circuit comprises a plurality of output current paths and a plurality of controllable switching circuits, wherein each of the output current paths includes a respective electrical component to define a current in the respective output current path, wherein a respective one of the controllable switching circuits is coupled to a respective one of the output current paths to connect the respective electrical component to the first output terminal, and wherein the random code generator is configured to provide a respective code derived from a respective one of the random codes.
G05F 3/24 - Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode-transistor combinations wherein the transistors are of the field-effect type only
15.
Sigma-delta analog-to-digital converter and sensor arrangements including the same
In an embodiment, an ADC converter includes a first injection branch and a second injection branch, a first feedback branch and a second feedback branch, an integration node connected to the first and second injection branches and the first and second feedback branches, an integrator connected to the integration node and a comparator connected downstream of the integrator and configured to generate a comparator output signal to control the first and second feedback branches, wherein the first and second injection branches are configured to provide a charge injection dependent on a respective input quantity to the integration node, wherein the input quantity of the first injection branch is selected from a differential voltage signal, a capacitance dependent signal and a current dependent signal, wherein the input quantity of the second injection branch is selected from another one of the differential voltage signal, the capacitance dependent signal and the current dependent signal, and wherein the first and second feedback branches are configured to provide a feedback charge injection dependent on the comparator output signal to the integration node, the first and second feedback branches configured to receive one of a fixed voltage signal or a differential voltage signal.
In an embodiment, a method for manufacturing a micro-electro-mechanical systems (MEMS) transducer device includes providing a substrate body with a surface, depositing an etch-stop layer (ESL) on the surface, depositing a sacrificial layer on the ESL, depositing a diaphragm layer on the sacrificial layer and removing the sacrificial layer, wherein depositing the sacrificial layer includes depositing a first sub-layer of a first material and depositing a second sub-layer of a second material, and wherein the first material and the second material are different materials.
A calibration arrangement has a sealable and thermally-isolated chamber comprising a socket mount having a number of reference samples in thermal contact with the socket mount and a number of sample sockets for devices-under test, DUTs, with each sample socket being arranged in proximity to and associated to at least one of the reference samples. The arrangement further comprises a thermal chuck and a circuit board, which is configured to provide electrical connection to the reference samples in the socket mount and DUTs in the sample sockets. The thermal chuck is configured to thermalize the socket mount and the circuit board to a temperature set point.
G01K 15/00 - Testing or calibrating of thermometers
G01R 31/69 - Testing of releasable connections, e.g. of terminals mounted on a printed circuit board of terminals at the end of a cable or a wire harnessTesting of releasable connections, e.g. of terminals mounted on a printed circuit board of plugsTesting of releasable connections, e.g. of terminals mounted on a printed circuit board of sockets, e.g. wall sockets or power sockets in appliances
G01K 5/28 - Measuring temperature based on the expansion or contraction of a material the material being a gas
18.
Method of manufacturing a semiconductor transducer device with multilayer diaphragm and semiconductor transducer device with multilayer diaphragm
In an embodiment a method includes providing a semiconductor body, forming a sacrificial layer above a surface of the semiconductor body, applying a diaphragm on the sacrificial layer and removing the sacrificial layer by introducing an etchant into openings of the diaphragm, wherein applying the diaphragm comprises applying a first layer, reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and patterning and structuring the first layer to form the openings.
In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
20.
ULTRASONIC FLOW METER AND METHOD FOR ULTRASONIC FLOW METERING
An ultrasonic flow meter comprises a first and a second transducer (11, 12), a first and a second impedance circuit (41, 42) comprising a variable impedance, a first and a second terminal (13, 14) coupled to the first and the second transducer (11, 12) via the first and the second impedance circuit (41, 42), a signal generator (16) and a signal evaluation circuit (20). The signal generator (16) and the signal evaluation circuit (20) are coupled to the first and the second terminal (13, 14). The signal evaluation circuit (20) comprises a time-to-digital converter (22) and a first comparator (23) that couples the signal input (21) to the time-to-digital converter (22). A control circuit (32) sets an impedance value of the variable impedance as a function of first up-stream and down-stream time signals (SD1UP, SD1DO) generated by the time-to-digital converter (22) in an up- and in a down-stream mode (A, B).
G01F 1/66 - Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by measuring frequency, phase shift or propagation time of electromagnetic or other waves, e.g. using ultrasonic flowmeters
21.
Sensor package and method of producing the sensor package
A sensor package and a method for producing a sensor package are disclosed. In an embodiment a method for producing a sensor package includes providing a carrier including electric conductors, fastening a dummy die or interposer to the carrier, providing an ASIC device including an integrated sensor element and fastening the ASIC device to the dummy die or interposer.
In an embodiment a method includes determining, for each capacitor element of a plurality of capacitor elements of a capacitor, an increase of a capacitance of a capacitor element caused by a decrease of a temperature of the capacitor and deriving a dew point from a temperature at which the increases of the capacitances or values corresponding to the increases of the capacitances exceed a predefined limit by generating a set of binary digits, each of the binary digits corresponding to one of the capacitor elements and indicating whether the capacitance of the capacitor element is within a predefined range, comparing sets of binary digits generated at different temperatures and determining a number of capacitor elements for which the corresponding binary digits of the sets are different and repeating the comparison for a sequence of sets generated at decreasing temperatures.
G01N 25/68 - Investigating or analysing materials by the use of thermal means by investigating moisture content by investigating dew-point by varying the temperature of a condensing surface
23.
Sensor arrangement and method of operating a sensor arrangement
A sensor arrangement and a method of operating a sensor arrangement are disclosed. In an embodiment, a sensor arrangement includes a pressure sensor realized as a capacitive pressure sensor, a capacitance-to-digital converter, a test circuit and a switching circuit coupling the capacitance-to-digital converter and the test circuit to the pressure sensor.
G01L 27/00 - Testing or calibrating of apparatus for measuring fluid pressure
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
G01D 5/24 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
24.
Sensor arrangement and method of operating a sensor arrangement
In an embodiment a sensor arrangement includes a pressure sensor realized as a capacitive pressure sensor, a capacitance-to-digital converter coupled to the pressure sensor and implemented as a delta-sigma analog-to-digital converter and a reference voltage generator having a control input configured to receive a control signal and an output configured to provide a reference voltage, wherein the output of the reference voltage generator is connected to an input of the capacitance-to-digital converter, wherein the reference voltage generator is configured to set a value of the reference voltage as a function of the control signal, and wherein at least two different values of the reference voltage have the same sign and different amounts.
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
G01L 27/00 - Testing or calibrating of apparatus for measuring fluid pressure
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
H03M 3/00 - Conversion of analogue values to or from differential modulation
25.
Method and circuit for temperature sensing, temperature sensor and electrical appliance
In an embodiment a method includes providing an analog signal having a first value of a temperature of an object, performing an analog-to-digital conversion of the analog signal using a first analog-to-digital converter (ADC) thereby providing a first digital signal representing an initial digital temperature value, performing an analog-to-digital conversion of the analog signal using a second ADC thereby providing a second digital signal representing a digital reference temperature value, regularly providing the analog signal having a successive value of the temperature of the object, performing the analog-to-digital conversion of the analog signal using the second ADC thereby providing the second digital signal representing a successive digital temperature value, calculating a digital delta temperature value according to a difference between the successive digital temperature value and the digital reference temperature value and repeating portions of the method as long as the digital delta temperature value lies within a predefined range.
G01K 7/01 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using semiconducting elements having PN junctions
H03M 1/38 - Analogue value compared with reference values sequentially only, e.g. successive approximation type
H03M 3/00 - Conversion of analogue values to or from differential modulation
26.
Capacitive sensors having temperature stable output
In an embodiment a system includes a sensor including a base having a base electrode and a first membrane suspended above the base, wherein the first membrane has a first membrane electrode, wherein the first membrane is configured to deflect with respect to the base electrode in response to an environmental condition, and wherein the sensor is configured to measure a capacitance between the base electrode and the first membrane electrode. The system further includes a first device of the system configured to generate electrical interference signals, a first electrically conductive shield layer positioned between the sensor and the first device of the system, wherein the first electrically conductive shield layer defines a plurality of first apertures extending through the first electrically conductive shield layer and a dielectric material disposed in the plurality of first apertures.
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
27.
Temperature sensor semiconductor device with pair of diodes and feedback loop
In an embodiment a semiconductor device includes a first diode and a second diode of specified sizing or biasing ratio, a negative voltage supply, a first resistor for a proportional to absolute temperature (PTAT) voltage drop, wherein the first diode is connected between the negative supply voltage and the first resistor, an array of dynamically matched current sources employing a dynamic element matching controller, wherein the first resistor is connected between the first diode and a first input of the array, and wherein the second diode is connected between the negative supply voltage and a second input of the array and a successive approximation register (SAR) feedback loop configured to drive a voltage difference to zero, wherein the voltage difference occurs between a first node present between the first resistor and the first input of the array and a second node present between the second diode and the second input of the array.
G01K 7/01 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using semiconducting elements having PN junctions
H03M 1/06 - Continuously compensating for, or preventing, undesired influence of physical parameters
H03M 1/08 - Continuously compensating for, or preventing, undesired influence of physical parameters of noise
28.
Monolithic sensor arrangement, manufacturing method and measurement method
A monolithic sensor arrangement, a manufacturing method and a measurement method are disclosed. In an embodiment a monolithic gas sensor arrangement includes a sensor including a first transducer with a first sensitive layer and a second transducer with a second sensitive layer, and a readout circuit configured to generate a first measurement signal and a second measurement signal depending on the first and second transducers, wherein the sensor arrangement is a humidity sensor arrangement, wherein the first and second sensitive layers are configured to absorb water molecules, and wherein the first and second sensitive layers differ from each other in at least one property.
G01N 27/22 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
In an embodiment, a pressure sensor module includes a base electrode surrounding at least a part of a bottom electrode, an anchor arrangement on top of the base electrode including at least two electrically conductive walls that both surround at least the part of the bottom electrode and an electrically conductive layer that covers at least the bottom electrode and the anchor arrangement such that a cavity is formed between the bottom electrode, the anchor arrangement and the electrically conductive layer, wherein, on at least one side of the cavity, a proportionate area of the electrically conductive walls in a cross section extending from a surface of an inner wall of the anchor arrangement facing the cavity to a surface of an outermost wall of the anchor arrangement facing away from the cavity in a plane parallel to a plane of the bottom electrode is equal to or less than 10%.
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
09 - Scientific and electric apparatus and instruments
Goods & Services
Measuring instrumentation and apparatus, namely, digitizers; gas sensors for measuring gas concentration; downloadable computer software for use in integrated metal-oxide gas sensors to measure gas concentration levels
An electric circuitry (10) for strain measurement comprises at least a first delay chain (110) of a plurality of delay elements (110a,..., 110n) and at least a second delay chain (210) of a plurality of delay elements (210a,..., 210n) being arranged on a substrate (30). The propagation delay time of the respective delay elements (110a,..., 110n; 220a,..., 220n) of the at least one first and second delay chain (110, 210) is dependent on the strain applied to the substrate (30). The delay elements (110a,..., 110n) of the at least one first delay chain (110) have other orientation than the delay elements (210a,..., 210n) of the at least one second delay chain (210). The electric circuitry (10) further comprises a processing circuit (900) to determine a magnitude of the strain applied on the substrate (30) in dependence on a first signal propagation delay time of the first delay chain (110) and the second delay chain (210).
G01L 1/22 - Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluidsMeasuring force or stress, in general by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
G01L 1/18 - Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
G01L 3/04 - Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft
33.
SENSOR ARRANGEMENT AND METHOD FOR FABRICATING A SENSOR ARRANGEMENT
A sensor arrangement (10) comprises a sensor die (11), an interposer (12) and a support (13). The sensor die (11) comprises a contact area (14), a suspended area (15) and a sensitive element (16) located in the suspended area (15). The interposer (12) comprises at least two vias (48, 49) connecting a first side (46) of the interposer (12) to a second side (47) of the interposer (12). The support (13) mechanically and electrically connects the contact area (14) of the sensor die (11) to the first side (46) of the interposer (12) and comprises at least two contact joints (30 to 35).
A circuit arrangement for resistance measurement comprises a capacitor coupled between a first potential node and a second potential node, a pair of terminals that comprises a first terminal and a second terminal, the first and second terminals being coupleable to one of the at least one resistor. The circuit arrangement further comprises a set of circuit branches comprising a first circuit branch, a second circuit branch, a third circuit branch and a fourth circuit branch, each comprising a switch switchable between a conductive state and an insulating state. The circuit arrangement further comprises the first terminal being coupled to the first potential node via the first circuit branch and the second circuit branch being connected in parallel. The circuit arrangement further comprises the second terminal being coupled to the second potential node via the third circuit branch and the fourth circuit branch being connected in parallel.
We disclose herein a method of annealing a composition to produce a film for a sensing device, the composition comprising at least one metal oxide material, the method comprising: depositing the composition on one side of a substrate; providing a source of electromagnetic radiation in a proximity to the composition; exposing a surface of the composition to a first dose of electromagnetic radiation, wherein the first dose comprises a first property which induces annealing of the composition; exposing the surface of the composition to a second dose of electromagnetic radiation, wherein the second dose comprises a second property which induces annealing of the composition, wherein the first property is substantially the same or different to the second property.
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
36.
Attachment of stress sensitive integrated circuit dies
A die attachment to a support is disclosed. In an embodiment, a semiconductor package includes a support and a die attached to the support by an adhesive on a backside of the die, wherein the die includes a capacitive pressure sensor integrated on a CMOS read-out circuit, and wherein the adhesive covers only a part of the backside of the die.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
H04R 1/04 - Structural association of microphone with electric circuitry therefor
Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
G01L 19/00 - Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
A capacitive sensor is disclosed. In an embodiment a semiconductor device includes a die including a capacitive pressure sensor integrated on a CMOS circuit, wherein the capacitive pressure sensor includes a first electrode and a second electrode separated from one another by a cavity, the second electrode including a suspended tensile membrane, and wherein the first electrode is composed of one or more aluminum-free layers containing Ti.
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
39.
Charge pump structure with regulated output voltage
A charge pump structure is disclosed. In an embodiment a regulated charge pump structure includes an output terminal configured to provide a regulated output voltage, a first charge pump configured to generate the output voltage as a function of an input supply voltage and a control circuit configured to limit a level of the output voltage and to generate a control voltage, wherein the level of the output voltage is controlled by the control voltage such that the output voltage does not exceed a threshold value.
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
H02M 1/32 - Means for protecting converters other than by automatic disconnection
40.
SENSOR DEVICE AND METHOD FOR OPERATING A SENSOR DEVICE
A sensor device (1) comprises a first sensor (2) and a second sensor (3), wherein the first sensor (2) comprises a heating element (4) configured to heat up the first sensor (2) in a controllable manner. Moreover, the second sensor (3) is thermally coupled to the first sensor (2), in particular to the heating element (4), such that the heating element (4) is further configured to heat up the second sensor (3) in a controllable manner.
In an embodiment a method for operating a gas sensor arrangement includes generating a sensor current by a gas sensor, converting the sensor current into a digital comparator output signal in a charge balancing operation depending on a first clock signal, determining from the digital comparator output signal an asynchronous count comprising an integer number of counts depending on the first clock signal, determining from the digital comparator output signal a fractional time count depending on a second clock signal and calculating from the asynchronous count and from the fractional time count a digital output signal which is indicative of the sensor current generated by the gas sensor.
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
H03M 1/52 - Input signal integrated with linear return to datum
42.
SENSOR OPERABLE TO MEASURE OZONE CONCENTRATION AND A METHOD FOR USING A SENSOR
A sensor (10) is operable to measure ozone concentration and comprises an inner housing (16) disposed within an interior (14) of an outer housing (13);an ozone sensing component (11) disposed within an interior (17) of the inner housing (16);an ozone modifying component (12) disposed within the interior (14) of the outer housing (13);a substrate (22) on which the ozone sensing component (11) and the ozone modifying component (12) are disposed;a first inlet (15) integrated into the outer housing (13)and conducting ambient gaseous matter from an outside of the outer housing (13) into the interior (14) of the outer housing (13); and a second inlet (21) integrated into the inner housing (16)and conducting the gaseous matter from the interior (14) of the outer housing (13) into the interior (17) of the inner housing (16) and adjacent to the ozone sensing component (11).
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
43.
SIGMA-DELTA ANALOG-TO-DIGITAL CONVERTER AND SENSOR ARRANGEMENTS INCLUDING THE SAME
A sigma-delta analog-to-digital converter comprises first and second injection branches (101, 102) and first and second feedback branches (121, 122) connected to an integration node (120). The first and second injection branches are configured to provide a charge injection from different input quantities selected from a differential voltage signal, a capacitance dependent signal and a current dependent signal. The first and second feedback branches are configured to provide a feedback charge injection of a fixed voltage signal or a differential voltage signal.
A method of detecting a time-of-flight signal comprises the following steps. First, a signal train is transmitted through a medium. The transmitted signal train comprises a sequence of waves,or wave periods, of a first group and waves,or wave periods, of a second group. The groups are shifted in the time domain according to a predetermined phase shift. The transmitted signal train is received as a received signal train and as a function of time. The transmitted signal train is altered through the medium and is considered the received signal train after traversing through the medium. The phase shift is detected in the received signal train. Then, wave periods of the received signal train are assigned to respective wave periods of the first group using the detected phase shift as reference. Finally, a sequence of time-of-flight signals is determined from the sequence of waves of the first group and the assigned wave periods of the received signal train, respectively.
G01F 1/66 - Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by measuring frequency, phase shift or propagation time of electromagnetic or other waves, e.g. using ultrasonic flowmeters
A method for manufacturing an integrated micro-electro-mechanical systems, MEMS, transducer device, comprises providing a substrate body (1) with a surface, depositing an etch-stop layer (8), ESL, on the surface, depositing a sacrificial layer (3) on the ESL (8), depositing a diaphragm layer (6) on the sacrificial layer (3), and removing the sacrificial layer (3). Depositing the sacrificial layer (3) comprises depositing a first sub-layer (4) of a first material and depositing a second sub-layer (5) of a second material, wherein the first and the second material are different materials.
A gas sensing device comprises: a substrate comprising an etched cavity portion and a substrate portion, a dielectric layer disposed on the substrate, wherein the dielectric layer comprises a dielectric membrane, wherein the dielectric membrane is adjacent to the etched cavity portion of the substrate, a heater located within the dielectric layer; a material for sensing a gas; and one or more polysilicon electrodes coupled with the material for sensing a gas.
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 27/22 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
A gas sensing device comprising a substrate comprising an etched cavity portion and a substrate portion; a dielectric layer disposed on the substrate. The dielectric layer comprises a dielectric membrane. The dielectric membrane is adjacent to the etched cavity portion of the substrate. The dielectric membrane comprises an etched recess portion, a heater located within the dielectric layer, and a material for sensing a gas. The material for sensing a gas is located within the etched recess portion of the dielectric membrane.
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
48.
Method for determining an electrical parameter and measurement arrangement for determining an electrical parameter
In an embodiment a method for determining an electrical parameter includes charging, in parallel, a first capacitor and a second capacitor from a common supply voltage, measuring a first discharge time by discharging the first capacitor using a comparator and a time-to-digital converter that is connected to an output of the comparator and that provides a digital output signal, measuring a second discharge time by discharging the first capacitor a second time or by discharging the second capacitor using the comparator and the time-to-digital converter and determining the electrical parameter from a ratio of the first and second discharge times.
G01R 27/26 - Measuring inductance or capacitanceMeasuring quality factor, e.g. by using the resonance methodMeasuring loss factorMeasuring dielectric constants
G01R 27/02 - Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
49.
SEMICONDUCTOR TRANSDUCER DEVICE WITH MULTILAYER DIAPHRAGM AND METHOD OF MANUFACTURING A SEMICONDUCTOR TRANSDUCER DEVICE WITH MULTILAYER DIAPHRAGM
The semiconductor transducer device comprises a diaphragm (10) suspended above a semiconductor body (1). A first layer (9) of the diaphragm (10) comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound and covers a second layer (8) that comprises titanium and/or TiN. Thus the first layer (9) acts as protection layer and prevents production of residues like titanium fluorides during the etching of a sacrificial layer (5) using HF vapor to release the diaphragm (10).
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
50.
METHOD OF MANUFACTURING A SEMICONDUCTOR TRANSDUCER DEVICE WITH MULTILAYER DIAPHRAGM AND SEMICONDUCTOR TRANSDUCER DEVICE WITH MULTILAYER DIAPHRAGM
A method of manufacturing a semiconductor transducer device comprises providing a semiconductor body (1), forming a sacrificial layer (5) above a surface of the semiconductor body (1), applying a diaphragm (10) on the sacrificial layer (5), and removing the sacrificial layer (5) by introducing an etchant into openings (11) of the diaphragm (10). Applying the diaphragm (10) comprises applying a first layer (7), reducing a roughness of a surface (15) of the first layer (7) to achieve a processed surface (16), and patterning and structuring the first layer (7) to form the openings (11).
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
H04R 31/00 - Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
G01P 15/125 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by capacitive pick-up
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
A gas sensing device comprising a substrate comprising an etched cavity portion and a substrate portion, a dielectric layer disposed on the substrate, wherein the dielectric layer comprises a dielectric membrane, wherein the dielectric membrane is adjacent to the etched cavity portion of the substrate, a heater located within the dielectric layer; a material for sensing a gas; and one or more polysilicon electrodes coupled with the material for sensing a gas.
G01N 27/04 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 27/14 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
G01N 27/22 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
52.
ELECTRO-THERMAL BASED DEVICE AND METHOD FOR OPERATING A HEATER
An electro-thermal based device comprises a heater (11), a readout circuit (14), a digital controller (16) having a first input (17) coupled to a first output (18) of the readout circuit (14), and a digital sigma-delta modulator (19) having a first input (20) coupled to an output (21) of the digital controller (16) and an output (22) coupled to the heater (11).
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 27/14 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
G01N 27/16 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas
G05D 23/19 - Control of temperature characterised by the use of electric means
G05D 23/24 - Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. thermistor
53.
ELECTRIC CIRCUIT ARRANGEMENT TO CONTROL CURRENT GENERATION
A time-to-digital converter arrangement has a ring oscillator with a plurality of inverting elements and a first and a second counter coupled to the ring oscillator. The first counter is configured to increment a first counter value if a positive edge transition is present at one of the inverting elements. The second counter is configured to increment a second counter value if a negative edge transition is present at the one of the inverting elements. A storage element stores the first and the second counter value and logical states of the plurality of inverting elements. A decoder coupled to the storage element selects one of the first and the second counter value as a valid value based on an evaluation of the stored logical states, and outputs a total counter value based on the valid value and the stored logical states.
H03L 7/089 - Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses
H03L 7/081 - Details of the phase-locked loop provided with an additional controlled phase shifter
A sensor semiconductor device comprises a transducer which comprises a capacitor with at least two electrodes. The transducer further comprises a polymer which is arranged between at least two electrodes of the capacitor, and a top surface of the transducer. The polymer is able to absorb water and the top surface is arranged such that it is exposed to the environment of the sensor semiconductor device. Furthermore, at least a part of the top surface is superhydrophobic and the sensor semiconductor device is capable of measuring the humidity of the environment of the sensor semiconductor device.
G01N 27/22 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
56.
Sensor package and method of producing the sensor package
The sensor package comprises a carrier (1) including electric conductors (13), an ASIC device (6) and a sensor element (7), which is integrated in the ASIC device (6). A dummy die or interposer (4) is arranged between the carrier (1) and the ASIC device (6). The dummy die or interposer (4) is fastened to the carrier (1), and the ASIC device (6) is fastened to the dummy die or interposer (4).
A time-to-digital converter system has at least one time-to-digital converter comprising an oscillator, a counter being driven by the oscillator, an evaluation block connected to the counter and configured for determining a time difference associated with a start signal and a stop signal, and a histogram block with a number of bins for recording entries associated with the time difference. The system can be calibrated by operating or preparing to operate the time-to-digital converter system with a measurement clock signal defining a measurement interval, providing a calibration clock signal having a frequency higher than the measurement clock signal by a predefined ratio, using a selected clock edge of the calibration clock signal as the start signal and a subsequent clock edge of the calibration clock signal as the stop signal. The evaluation block determines a calibration time difference based on the respective clock edges of the calibration clock signal used as the start signal and the stop signal. A time measure associated with a counter step of the counter is determined based on the predefined ratio and the calibration time difference.
09 - Scientific and electric apparatus and instruments
Goods & Services
Sensors and detectors; air quality sensors; pressure
sensors; flow sensors (liquids and gases); humidity sensors;
hydrogen sensors; alert systems relating to air quality;
wireless controllers to remotely monitor and control alert
systems and air treatment equipment.
09 - Scientific and electric apparatus and instruments
Goods & Services
Sensors and detectors; air quality sensors; pressure
sensors; flow sensors (liquids and gasses); humidity
sensors; hydrogen sensors; alert systems relating to air
quality; wireless controllers to remotely monitor and
control alert systems and air treatment equipment.
09 - Scientific and electric apparatus and instruments
Goods & Services
Air quality sensor, namely, particle counters; pressure sensors; liquid and gas flow meters; humidity sensors; hydrogen sensors; alert systems relating to air quality comprised of acoustic sound alarms; wireless controllers to remotely monitor and control the functioning of electronic alert systems and air treatment equipment
09 - Scientific and electric apparatus and instruments
Goods & Services
(1) Air quality sensor, namely, particle counters; pressure sensors; liquid and gas flow meters; humidity sensors; hydrogen sensors; alert systems relating to air quality comprised of acoustic sound alarms; wireless controllers to remotely monitor and control the functioning of electronic alert systems and air treatment equipment.
G01N 27/22 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
63.
Method and sensor system for measuring gas concentrations
In an embodiment a sensor system includes a carrier implemented as one of a ceramic carrier, a printed circuit board or a transistor outline header, a measuring area semiconductor body implemented as a first micromechanical component, a gas sensor implemented as a second micromechanical component and including an electrode assembly, a sensitive layer and a sensor membrane that spans a recess, wherein the measuring area semiconductor body and the gas sensor are connected to each other, a further sensor with a further electrode assembly and a further sensitive layer, wherein the further sensor is a further gas sensor or a humidity sensor, and a measuring area filled by the gas sample and arranged between the measuring area semiconductor body and the gas sensor, wherein the gas in the measuring area is in contact with the gas sensor and the further sensor.
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
64.
Pressure sensor device and method for forming a pressure sensor device
In an embodiment a pressure sensor device includes a substrate body, a pressure sensor having a membrane and a cap body having at least one opening, wherein the pressure sensor is arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, and wherein the mass of the substrate body amounts to at least 80% of the mass of the cap body and at most 120% of the mass of the cap body.
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
G01L 19/04 - Means for compensating for effects of changes of temperature
G01L 7/08 - Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
65.
Semiconductor device and method for forming a semiconductor device
In an embodiment, a semiconductor device includes a substrate body, an environmental sensor, a cap body and a volume of gas, wherein the environmental sensor and the volume of gas are arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, wherein at least one channel between the substrate body and the cap body connects the volume of gas with an environment of the semiconductor device such that the channel is permeable for gases, and wherein a thickness of the substrate body amounts to at least 80% of a thickness of the cap body and at most 120% of the thickness of the cap body.
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
G01L 1/14 - Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
A semiconductor device includes a die including a capacitive pressure sensor integrated on a CMOS circuit. The capacitive pressure sensor includes first and second electrodes separated from one another by a cavity, wherein the second electrode includes a suspended tensile membrane. The first electrode can be composed of one or more aluminum-free layers containing Ti (e.g., Ti, TiN, TiSiN). In some instances, the second electrode includes tungsten disposed on a TiN/Ti/TiN stack or on a TiSiN/Ti/TiN stack.
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
09 - Scientific and electric apparatus and instruments
Goods & Services
(1) Air quality sensor, namely, particle counters; pressure sensors; liquid and gas flow meters; humidity sensors; hydrogen sensors; alert systems relating to air quality comprised of acoustic sound alarms; wireless controllers to remotely monitor and control the functioning of electronic alert systems and air treatment equipment.
09 - Scientific and electric apparatus and instruments
Goods & Services
Air quality sensor, namely, particle counters; pressure sensors; liquid and gas flow meters; humidity sensors; hydrogen sensors; alert systems relating to air quality comprised of acoustic sound alarms; wireless controllers to remotely monitor and control the functioning of electronic alert systems and air treatment equipment
69.
Method and gas sensor arrangement for determining an absolute gas concentration with a gas sensor and decomposing gas to be measured
A method and a gas sensor arrangement for determining an absolute gas concentration with a gas sensor and a decomposing gas to be measured are disclosed. In an embodiment a method includes acquiring a first sensor signal and determining from the first sensor signal at least one initial data point, decomposing the gas to be measured using a means for decomposing the gas of the gas sensor arrangement, acquiring a second sensor signal and determining from the second sensor signal at least one decay data point and deriving an absolute gas concentration from a gas concentration function realized as a mathematical function by evaluating the gas concentration function at least for the at least one initial data point and the at least one decay data point.
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
70.
Microphone and pressure sensor package and method of producing the microphone and pressure sensor package
The microphone and pressure sensor package comprises a carrier (1) with an opening (16), a microphone device (20) including a diaphragm (21) and a perforated back plate (22) arranged above the opening (16), an ASIC device (6), and a cover (9) forming a cavity (17) between the carrier (1) and the cover (9). The ASIC device (6) and the microphone device (20) are arranged in the cavity (17). A sensor element (7) provided for a pressure sensor is integrated in the ASIC device (6). The pressure outside the cavity (17) is transferred to the sensor element (7) through the opening (16), the diaphragm (21), and the back plate (22).
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
H01L 23/00 - Details of semiconductor or other solid state devices
H04R 31/00 - Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
71.
Sensor assembly and arrangement and method for manufacturing a sensor assembly
A sensor assembly for being mounted on a circuit board comprises an interposer with at least one opening extending between a first and a second main surface of the interposer. The interposer comprises at least two stress decoupling elements, each comprising a flexible structure formed by a respective portion of the interposer being partially enclosed by one of the at least one opening. A sensor die is connected to the flexible structures on the first main surface. At least two board connection elements are arranged on the first main surface and adapted for connecting the assembly to the circuit board.
In an embodiment a dew point sensor device includes a semiconductor substrate, a top layer arranged on the semiconductor substrate, a Peltier element integrated in the semiconductor substrate, a temperature sensor, a capacitor arranged at a surface of the top layer facing away from the semiconductor substrate, the temperature sensor and the capacitor being arranged so that a temperature of the capacitor is measurable by the temperature sensor, wherein the capacitor includes a plurality of capacitor elements each having a capacitance, and an electronic circuit configured for an individual determination of the capacitances and a generation of a set of binary digits, each of the binary digits corresponding to one of the capacitor elements and indicating whether the capacitance of the capacitor element is within a predefined range.
G01N 25/00 - Investigating or analysing materials by the use of thermal means
G01K 7/00 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat
G01N 25/68 - Investigating or analysing materials by the use of thermal means by investigating moisture content by investigating dew-point by varying the temperature of a condensing surface
We disclose herein a method for heating a gas sensing material formulation on a microhotplate which comprises: a dielectric membrane formed on a semiconductor substrate comprising an etched portion; and the gas sensing material formulation being located on one side of the dielectric membrane. The method comprising: selectively heating the gas sensing material formulation using an infra-red (IR) heater located over the substrate, and controllably cooling the semiconductor substrate using a cooling baseplate provided under the substrate and using an insulating medium located between the substrate and the cooling base plate so that a gas sensing structure is formed on said one side of the dielectric membrane from the gas sensing material formulation.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
74.
Sensor semiconductor device and method of producing a sensor semiconductor device
The sensor semiconductor device comprises a substrate (1) with a main surface (2), a sensor region (3) on or above the main surface, a coating layer (4) above the main surface, and a trench (5) formed in the coating layer around the sensor region. The trench provides drainage of a liquid from the coating layer.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
H01L 23/00 - Details of semiconductor or other solid state devices
A gas sensor with a gas permeable region is disclosed. In an embodiment a gas sensor includes a dielectric membrane formed on a semiconductor substrate having a cavity portion, a heater located within or over the dielectric membrane, a material for sensing a gas, wherein the material is located on one side of the dielectric membrane, a support structure located near the material, a gas permeable membrane coupled to the support structure so as to protect the material, wherein the semiconductor substrate forms the support structure.
G01N 27/22 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
G01N 27/414 - Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
We disclose herein an environmental sensor system comprising an environmental sensor comprising a first heater and a second heater in which the first heater is configured to consume a lower power compared to the second heater. The system also comprises a controller coupled with the environmental sensor. The controller is configured to detect if a measured value of a targeted environmental parameter is present. The controller is configured to switch on at least one of the first and second heaters based on the presence and/or result of the measured value of the targeted environmental parameter.
G01N 27/18 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by changes in the thermal conductivity of a surrounding material to be tested
G01N 21/3504 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 27/16 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas
We disclose herein a method for testing a batch of environmental sensors to determine the fitness for purpose of the batch of environmental sensors, the method comprising: performing a plurality of electrical test sequences to the sensor inputs of the batch of environmental sensors to measure electrical responses of the sensor outputs of the batch of environmental sensors; correlating the measured electrical responses from the batch of environmental sensors to predetermined environmental parametric ranges of at least one environmental sensor so as to define correlated electrical test limits; and determining the fitness for purpose of the batch of environmental sensors if the measured electrical responses are within the correlated electrical test limits.
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
A pressure sensor measures pressure by measuring the deflection of a MEMS membrane using a capacitive read-out method. There are two ways to implement the invention. One involves the use of an integrated Pirani sensor and the other involves the use of an integrated resonator, to function as a reference pressure sensor, for measuring an internal cavity pressure.
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
G01L 7/08 - Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
G01L 15/00 - Devices or apparatus for measuring two or more fluid pressure values simultaneously
G01L 13/02 - Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
G01L 1/14 - Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
79.
Method and sensor system for measuring gas concentrations
A method for measuring the concentration of at least one gas from a gas sample by a sensor system (10) which has a measuring area (12) with at least one gas sensor (14), wherein the inlet of the measuring area (12) being closed by a gas-permeable structure (13) such that the volume of the measuring area (12) is initially heated up, the heating is then switched off and the change in resistance of the at least one gas sensor (14) is measured.
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
One example discloses an chip, comprising: a substrate; a first side of a passivation layer coupled to the substrate; a device, having a device height and a cavity, wherein a first device surface is coupled to a second side of the passivation layer which is opposite to the first side of the passivation layer; and a set of structures coupled to the second side of the passivation layer and configured to have a structure height greater than or equal to the device height.
In an embodiment, a method for calibrating a pressure sensor device is disclosed. The method involves determining the resonant frequency of a membrane of the pressure sensor device after the pressure sensor device has been attached to a circuit board, calculating a change in the resonant frequency from a resonant frequency stored in memory, calculating strain of the membrane of the pressure sensor device from the change in resonant frequency, and calibrating the pressure sensor device based on a capacitance-to-pressure curve calculated using the strain of the membrane of the pressure sensor device.
G01L 27/00 - Testing or calibrating of apparatus for measuring fluid pressure
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
82.
Resonant CO2 sensing with mitigation of cross-sensitivities
2) levels, including a first oscillator group comprising a first sensor to measure air pressure, where the first sensor comprises a first sealed membrane, and where the first sealed membrane overlays a sealed first cavity; a second oscillator group including a second sensor to measure the resonance frequency of a second unsealed oscillating membrane, and where the second unsealed membrane overlays a second cavity in contact with the air outside of the second sensor; and a mixer accepting as input a first frequency measurement output from the first oscillator group and a second frequency measurement output from the second oscillator group, outputting the difference of the first frequency measurement and the second frequency measurement, and computing a carbon dioxide measurement based on the difference.
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
G01N 29/22 - Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic wavesVisualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object Details
G01N 29/32 - Arrangements for suppressing undesired influences, e.g. temperature or pressure variations
G01N 29/44 - Processing the detected response signal
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
Various exemplary embodiments relate to a magnetometer device to measure oscillation frequency, including a feedthrough loop including an amplifier and a voltage bias connected to a first input of a metallic membrane; a membrane ground connected to a membrane output; a fixed plate including a first fixed plate output connected to a second input of the amplifier, wherein the fixed plate is physically separated from the metallic membrane but connected to the metallic membrane by a Lorentz force, and where the physical separation differs due to an angle of a magnetic field relative to a direction of a current; a second fixed plate output sensitive to the Lorentz force; and a circuit connected to the second fixed plate output to calculate an angle of the magnetic force based upon the Lorentz force.
Embodiments of a method for forming a suspended membrane include depositing a first electrically conductive material above a sacrificial layer and within a boundary trench. The first electrically conductive material forms a corner transition portion above the boundary trench. The method further includes removing a portion of the first electrically conductive material that removes at least a portion of uneven topography of the first electrically conductive material. The method further includes depositing a second electrically conductive material. The second electrically conductive material extends beyond the boundary trench. The method further includes removing the sacrificial layer through etch openings and forming a cavity below the second electrically conductive material. The first electrically conductive material defines a portion of a sidewall boundary of the cavity.
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
H01L 29/84 - Types of semiconductor device controllable by variation of applied mechanical force, e.g. of pressure
Various exemplary embodiments relate to a pressure sensor including a pressure sensitive membrane suspended over a cavity, wherein the membrane is secured by a set of anchors to a substrate; and a getter material embedded in the membrane, wherein the surface of the getter is in contact with any gas within the cavity, and wherein two end points of the getter material are attached through the substrate by anchors capable of conducting through the substrate an electrical current through the getter material.
G01L 19/04 - Means for compensating for effects of changes of temperature
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
One example discloses a MEMS device, including: a cavity having an internal environment; a seal isolating the internal environment from an external environment outside the MEMS device; wherein the seal is susceptible to damage in response to a calibration unsealing energy; wherein upon damage to the seal, a pathway forms which couples the internal environment to the external environment; and a calibration circuit capable of measuring the internal environment before and after damage to the seal.
In one example, a thermal conductivity gas sensor is disclosed. The sensor includes a sensing element and an amplification material coupled to the sensing element. The amplification material has a target gas dependent thermal diffusivity. The sensing element measures the thermal diffusivity of the amplification material to determine a target gas concentration.
G01N 25/18 - Investigating or analysing materials by the use of thermal means by investigating thermal conductivity
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
G01N 25/36 - Investigating or analysing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity on combustion or catalytic oxidation, e.g. of components of gas mixtures the rise in temperature of the gases resulting from combustion being measured directly using mechanical temperature-responsive elements, e.g. bimetallic for investigating the composition of gas mixtures
G01N 27/18 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by changes in the thermal conductivity of a surrounding material to be tested
An electrochemical sensor for sensing a target substance is disclosed. In one example, the sensor discloses an electrolyte matrix, wherein the matrix reposits an electrolyte; a working electrode coupled to the electrolyte matrix at a first location; a counter electrode coupled to the electrolyte matrix at a second location; an electrical circuit, coupled to the working electrode and the counter electrode, and capable of generating an output signal in response to an electrical current which flows between the working electrode and the counter electrode in response to a presence of the target substance.
C08L 53/00 - Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCompositions of derivatives of such polymers
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 27/22 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
90.
Differential pressure sensor with a capacitive read out system
A differential pressure sensor comprises a cavity having a base including a base electrode and a membrane suspended above the base which includes a membrane electrode, wherein the first membrane is sealed with the cavity defined beneath the first membrane. A first pressure input port is coupled to the space above the sealed first membrane. A capacitive read out system is used to measure the capacitance between the base electrode and membrane electrode. An interconnecting channel is between the cavity and a second pressure input port, so that the sensor is responsive to the differential pressure applied to opposite sides of the membrane by the two input ports.
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
H01G 7/00 - Capacitors in which the capacitance is varied by non-mechanical meansProcesses of their manufacture
G01L 7/08 - Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
G01L 13/02 - Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
An infra-red (IR) device comprising a dielectric membrane formed on a silicon substrate comprising an etched portion; and at least one patterned layer formed within or on the dielectric membrane for controlling IR emission or IR absorption of the IR device, wherein the at least one patterned layer comprises laterally spaced structures.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/34 - Materials of the light emitting region containing only elements of group IV of the periodic system
H05B 3/26 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
G01J 5/12 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
There is disclosed an electrochemical sensor device comprising: an integrated electrochemical sensor element having: a substrate; first and second electrodes formed on the upper surface of the substrate; and an electrolyte layer formed on the first and second electrodes so as to electrically contact both the first and second electrodes; and a sensor integrated circuit electrically connected to the first and second electrodes of the integrated electrochemical sensor element. The integrated electrochemical sensor element and the sensor integrated circuit are provided in a single package.
G01N 27/26 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variablesInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by using electrolysis or electrophoresis
G01N 27/404 - Cells with anode, cathode and cell electrolyte on the same side of a permeable membrane which separates them from the sample fluid
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
93.
Integrated circuit comprising a thermal conductivity based gas sensor
An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate. The integrated circuit also includes a relative humidity sensor on the substrate. The relative humidity sensor includes a first sensor electrode, a second sensor electrode, and a humidity sensitive layer covering the first and second electrodes. The integrated circuit further includes a thermal conductivity based gas sensor on the substrate. The thermal conductivity based gas sensor has an electrically resistive sensor element located above the humidity sensitive layer.
G01N 27/18 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by changes in the thermal conductivity of a surrounding material to be tested
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 27/22 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
G01N 25/56 - Investigating or analysing materials by the use of thermal means by investigating moisture content
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
94.
Integrated circuit including an environmental sensor
An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate including at least one environmental sensor. The integrated circuit also includes a cap layer located on a major surface of the substrate. The integrated circuit further includes at least one elongate channel for allowing access of said sensor to an environment surrounding the integrated circuit.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/50 - Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups or
H01L 21/77 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate. The integrated circuit also includes an electrical impedance based gas sensor located on the substrate. The sensor includes first and second electrically conductive sensor electrodes. Each sensor electrode is enclosed in an electrically conductive corrosion protection material. The sensor also includes a gas sensitive material located between the sensor electrodes. The impedance of the gas sensitive material is sensitive to a gas to be sensed.
G01R 27/08 - Measuring resistance by measuring both voltage and current
G01N 27/04 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
G01N 27/02 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
As may be consistent with one or more embodiments discussed herein, an integrated circuit apparatus includes a membrane suspended over a cavity, with the membrane and cavity defining a chamber. The membrane has a plurality of openings therein that pass gas into and out of the chamber. As the membrane is actuated, the volume of the chamber changes to generate a gas pressure inside the chamber that is different than a pressure outside the chamber. A sensor detects a frequency-based characteristic of the membrane responsive to the change in volume, and therein provides an indication of the gas pressure outside the chamber.
G01L 11/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group or
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
97.
Integrated circuit with pressure sensor having a pair of electrodes
Disclosed is an integrated circuit (100), comprising a semiconductor substrate (110) carrying a plurality of circuit elements; and a pressure sensor including a cavity (140) on said semiconductor substrate, said cavity comprising a pair of electrodes (120, 122) laterally separated from each other; and a flexible membrane (130) over and spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, said membrane comprising at least one aperture (132). A method of manufacturing such an IC is also disclosed.
H01L 29/84 - Types of semiconductor device controllable by variation of applied mechanical force, e.g. of pressure
H04R 23/00 - Transducers other than those covered by groups
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
98.
Device control system and method of determining altitude
A gaming system has a pressure measurement in the remote control (which may be the complete gaming apparatus) and this is used to derive a height of the remote control. In this way, barometric pressure measurement allows precise determination of the altitude of the game controller. The altitude information is then used to control the game.
A63F 13/217 - Input arrangements for video game devices characterised by their sensors, purposes or types using environment-related information, i.e. information generated otherwise than by the player, e.g. ambient temperature or humidity
A63F 13/218 - Input arrangements for video game devices characterised by their sensors, purposes or types using pressure sensors, e.g. generating a signal proportional to the pressure applied by the player
G01C 25/00 - Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass
G01C 5/06 - Measuring heightMeasuring distances transverse to line of sightLevelling between separated pointsSurveyors' levels by using barometric means
A63F 13/211 - Input arrangements for video game devices characterised by their sensors, purposes or types using inertial sensors, e.g. accelerometers or gyroscopes
G06F 1/16 - Constructional details or arrangements
A63F 13/20 - Input arrangements for video game devices
An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a thermal conductivity based gas sensor having an electrically resistive sensor element located on the major surface for exposure to a gas to be sensed. The integrated circuit further includes a barrier located on the major surface for inhibiting a flow of the gas across the sensor element.
G01N 9/00 - Investigating density or specific gravity of materialsAnalysing materials by determining density or specific gravity
H01L 27/16 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including thermomagnetic components
G01N 27/18 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by changes in the thermal conductivity of a surrounding material to be tested
H01L 37/00 - Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
100.
Ultrasonic flow measurement arrangement and method having a clock generating device and driver
A measurement arrangement comprises a clock generator (11) which can be coupled to an emitting ultrasonic transducer (13) and a mixing arrangement (12) for providing a first mixer output signal (SO1). The mixing arrangement (12) has a first input (18) which can be coupled to a receiving ultrasonic transducer (14) and a second input (19) which is coupled to the clock generator (11).
G01F 1/66 - Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by measuring frequency, phase shift or propagation time of electromagnetic or other waves, e.g. using ultrasonic flowmeters
