Abstract

A heat exchanger according to the present disclosure includes an evaporator which is provided with an evaporation body that absorbs heat from the outside and causes a liquid phase working fluid to evaporate into a gas phase while moving by means of a capillary force, the heat exchanger causing the gas phase working fluid that has been guided from the evaporator to condense, and circulates the condensed working fluid to the evaporator as the liquid phase working fluid, wherein: the evaporator is internally partitioned by the evaporation body, and includes a liquid phase accommodating chamber which is provided on one side when viewed from the evaporator and which accommodates the liquid phase working fluid, and a gas phase accommodating chamber which is provided on the opposite side of the evaporation body to the liquid phase accommodating chamber and which accommodates the gas phase working fluid; the evaporator is provided with a pressing body which is provided on the liquid phase accommodating chamber side when viewed from the evaporation body, and which presses the side surface of the evaporation body on the liquid phase accommodating chamber side; and the evaporation body has a pressed portion, which is a part that is pressed by the pressing body and which has a higher toughness than parts that are not pressed by the pressing body.

IPC Classes  ?

• F28D 15/02 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes

Abstract

Disclosed is a charging and discharging method for charging and discharging a storage battery (1) which includes a negative electrode current collector (21) that is formed of a metal substrate, and a large number of fine protrusions (22) that are formed on the surface of the negative electrode current collector (21), and which is configured such that metal ions moved from the positive electrode side via an electrolyte solution during charging are transformed into a metal and deposited on the fine protrusions (22). After charging the storage battery from the non-charged initial state to the initial charge capacity, charging and discharging are repeated so that the fine protrusions are not exposed from the metal.

IPC Classes  ?

• H01M 10/44 - Methods for charging or discharging
• H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries

Abstract

Provided is a reference standard for use in the evaluation or determination of the quality of cells of interest, the reference standard including a rapidly expanding mesenchymal stem cell population characterized by employing, as an indicator, the positivity or negativity for at least one marker selected from LNGFR (CD271) and Thy-1 (CD90).

IPC Classes  ?

• C12N 5/0775 - Mesenchymal stem cellsAdipose-tissue derived stem cells
• C12M 1/34 - Measuring or testing with condition measuring or sensing means, e.g. colony counters
• C12Q 1/02 - Measuring or testing processes involving enzymes, nucleic acids or microorganismsCompositions thereforProcesses of preparing such compositions involving viable microorganisms
• G06T 7/00 - Image analysis
• G06V 20/69 - Microscopic objects, e.g. biological cells or cellular parts

Abstract

Provided is a polynucleotide having an exon skipping effect on SNCA exon 3. This single-stranded polynucleotide includes a base sequence A complementary to at least a part of an SNCA gene sequence, and the base sequence A includes a base sequence a1 complementary to a base sequence (5'-CATGGTGTGGCAAC) represented by SEQ ID NO: 1 and/or a base sequence a2 complementary to a base sequence (5'-AGGTAAGCTCCATTGTGC) represented by SEQ ID NO: 2.

IPC Classes  ?

• C12N 15/113 - Non-coding nucleic acids modulating the expression of genes, e.g. antisense oligonucleotides
• A61K 31/713 - Double-stranded nucleic acids or oligonucleotides
• A61K 31/7105 - Natural ribonucleic acids, i.e. containing only riboses attached to adenine, guanine, cytosine or uracil and having 3'-5' phosphodiester links
• A61K 48/00 - Medicinal preparations containing genetic material which is inserted into cells of the living body to treat genetic diseasesGene therapy
• A61P 25/00 - Drugs for disorders of the nervous system
• C12N 1/15 - Fungi Culture media therefor modified by introduction of foreign genetic material
• C12N 1/19 - YeastsCulture media therefor modified by introduction of foreign genetic material
• C12N 1/21 - BacteriaCulture media therefor modified by introduction of foreign genetic material
• C12N 5/10 - Cells modified by introduction of foreign genetic material, e.g. virus-transformed cells
• C12N 15/63 - Introduction of foreign genetic material using vectorsVectorsUse of hosts thereforRegulation of expression

Abstract

The present invention relates to a substrate with a gallium oxide film, the substrate comprising: a Si single crystal substrate; a gallium layer provided on the Si single crystal substrate; and a gallium oxide film provided on the gallium layer.

IPC Classes  ?

• C30B 29/16 - Oxides
• H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering

Abstract

The present invention relates to a method for producing a β-type gallium oxide film, said method comprising: converting a mixed gas that includes oxygen and ozone into plasma to dissociate the ozone into oxygen constituent particles, and supplying the oxygen constituent particles to a reaction chamber under reduced pressure; supplying elemental gallium to the reaction chamber; and epitaxially growing the β-type gallium oxide film on a β-type gallium oxide substrate inside the reaction chamber. A β-type gallium oxide substrate that has an off-angle is used as the β-type gallium oxide substrate.

IPC Classes  ?

• C30B 29/16 - Oxides
• H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering

Abstract

The present invention provides an electronic device in which a semiconductor layer comprising a gallium oxide–based material is provided on a Si substrate. The electronic device includes: a substrate (10) that comprises a Si single crystal; a semiconductor layer (non-doped layer) (11) that is provided on the substrate (10) in contact with the substrate (10) and comprises a uniaxially oriented gallium oxide–based semiconductor; and a transistor structure that includes a second semiconductor layer (n-type layer) (12) comprising the semiconductor layer or a gallium oxide–based semiconductor provided on the semiconductor layer, and three electrodes (a gate electrode (13), a source electrode (14), and a drain electrode (15)).

IPC Classes  ?

• H10D 30/87 - FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
• C30B 23/08 - Epitaxial-layer growth by condensing ionised vapours
• C30B 29/16 - Oxides
• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
• H10D 10/80 - Heterojunction BJTs
• H10D 30/47 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
• H10D 30/66 - Vertical DMOS [VDMOS] FETs
• H10D 30/83 - FETs having PN junction gate electrodes
• H10D 62/10 - Shapes, relative sizes or dispositions of the regions of the semiconductor bodiesShapes of the semiconductor bodies
• H10D 62/80 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

Abstract

The present invention provides an insulated gate-type semiconductor element having a semiconductor layer composed of a gallium oxide-based material. The semiconductor element comprises: a substrate (10) including a Si single crystal; a semiconductor layer (17) (a non-doped layer (11), and an n-type layer (12)) which is provided in contact with the substrate (10) and is composed of a uniaxially oriented gallium oxide-based semiconductor; a gate insulating film (16) provided in contact with the semiconductor layer (17); and a gate electrode (13) provided on the gate insulating film (16). The gate insulating film (16) is composed of a gallium oxide-based semiconductor having a resistivity of 1×104 Ω·cm or more.

IPC Classes  ?

• H10D 30/60 - Insulated-gate field-effect transistors [IGFET]
• H01L 21/36 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
• H10D 12/00 - Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
• H10D 30/47 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
• H10D 30/66 - Vertical DMOS [VDMOS] FETs
• H10D 62/80 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

Abstract

The present invention pertains to a substrate with a gallium oxide film, the substrate having: an Si single crystal substrate; a gallium oxide layer provided on the Si single crystal substrate; and a gallium oxide film provided on the gallium oxide layer. The gallium oxide layer has an atomic arrangement that matches the Si single crystal substrate.

IPC Classes  ?

• C30B 29/16 - Oxides
• H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering

Abstract

The present invention provides an electronic device having a semiconductor layer made of a gallium oxide-based material on an Si substrate. An electronic device comprises: a substrate (10) made of a Si single crystal; a semiconductor layer (11) provided in contact with the substrate (10) and made of a uniaxially oriented gallium oxide-based semiconductor; and a diode structure including a second semiconductor layer (12) made of a gallium oxide-based semiconductor provided on the semiconductor layer (11) or the semiconductor layer (11), and two electrodes (13, 14).

IPC Classes  ?

• H10D 8/60 - Schottky-barrier diodes
• C30B 23/08 - Epitaxial-layer growth by condensing ionised vapours
• C30B 29/16 - Oxides
• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
• H10D 8/01 - Manufacture or treatment
• H10D 8/20 - Breakdown diodes, e.g. avalanche diodes
• H10D 8/40 - Transit-time diodes, e.g. IMPATT or TRAPATT diodes
• H10D 8/50 - PIN diodes

Abstract

The present invention provides an optical device having, on an Si substrate, a semiconductor layer formed from a gallium oxide-based material. This optical device comprises: a substrate (10) formed from an Si single crystal; a semiconductor layer (16) (an n-type layer (11), an active layer (12), and a p-type layer (13)) that is provided in contact with the substrate (10) and is formed from a uniaxially oriented gallium oxide-based semiconductor; a semiconductor layer (16); and two electrodes (a positive electrode (14) and a negative electrode (15)). The semiconductor layer (16) includes a light-emitting element structure having an n-type region (an n-type layer (11)) and a p-type region (a p-type layer (13)), or a second semiconductor layer formed from a gallium oxide-based semiconductor provided on a semiconductor layer, and two electrodes. The second semiconductor layer has a light-emitting element structure having an n-type region and a p-type region.

IPC Classes  ?

• H10H 20/822 - Materials of the light-emitting regions
• C30B 29/16 - Oxides
• H01S 5/34 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
• H10F 30/00 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
• H10F 30/20 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
• H10H 20/817 - Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous

Abstract

Provided is a technology capable of applying a bias potential to a support part. This etching device comprises a mount part (20), a potential application member (30), a raising/lowering drive unit (40), a plasma generator (50), and a heating unit (80). A transportable support part (21) supporting a substrate (W) is mounted on the mount part (20). The heating unit (80) includes a light source (81) that is located below the mount part (20) and produces a heating light to heat the substrate (W). The potential application member (30) is provided above the mount part (20), and a prescribed bias potential is applied thereto. The raising/lowering drive unit (40) raises and lowers the mount part (20) between an upper position, where the potential application member (30) is in contact with the substrate (W) or the support part (21), and a lower position, where the potential application member (30) is separated from the substrate (W) and the support part (21). The plasma generator (50) generates a plasma, supplies the plasma to the upper surface of the substrate (W) on the support part (21) mounted on the mount part (20), and etches the upper surface of the substrate (W) by means of the plasma.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

An acquisition unit (312) acquires RRI data. A generation unit (314) generates heart rate variability index data on the basis of the RRI data. A first classification unit (318) classifies the heart rate variability index data into a combination of first and second groups, and a third group by inputting the heart rate variability index data to a first algorithm. A second classification unit (320) classifies the heart rate variability index data classified into the combination of first and second groups into the first group and the second group. The first algorithm is trained by using teaching data for the combination of first and second groups, and teaching data for the third group.

IPC Classes  ?

• A61B 5/352 - Detecting R peaks, e.g. for synchronising diagnostic apparatusEstimating R-R interval
• G06N 20/00 - Machine learning
• A61B 10/00 - Instruments for taking body samples for diagnostic purposesOther methods or instruments for diagnosis, e.g. for vaccination diagnosis, sex determination or ovulation-period determinationThroat striking implements

Abstract

An object of the present invention is to provide a novel therapeutic agent for a mental disorder with abnormal neurodevelopment as a pathological condition. The present invention provides an antipsychotic drug containing a Rho kinase inhibitor as an active ingredient. The antipsychotic drug can be used, for example, in the treatment of schizophrenia, autism spectrum disorder, bipolar disorder, or depression.

IPC Classes  ?

• A61K 31/551 - Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins having seven-membered rings, e.g. azelastine, pentylenetetrazole having two nitrogens as ring hetero atoms, e.g. clozapine, dilazep
• A61P 25/18 - Antipsychotics, i.e. neurolepticsDrugs for mania or schizophrenia

Abstract

The present invention addresses the problem of providing a method for examining complement-related disorders which reflects a disease state at the time of examination and has high specificity. The problem is solved by using a complement on extracellular vesicles as a marker for a complement-related disorder.

IPC Classes  ?

• G01N 33/53 - ImmunoassayBiospecific binding assayMaterials therefor

Abstract

An information processing device (100) is provided with a model acquisition unit (114), a target data acquisition unit (115), and a classification execution unit (116). The model acquisition unit (114) acquires a trained model (MO) to which comparison data (CD) is input and which outputs a living body classification result, the comparison data (CD) including, with respect to at least one item group pair (P1, P2) that is a pair of two item groups each constituted from at least one item in examination values (ED) for a living body, data indicating the ratio of an examination value (ED) belonging to the other item group to an examination value (ED) belonging to one item group. The target data acquisition unit (115) acquires the comparison data (CD) for a target living body. The classification execution unit (116) executes classification of the target living body by inputting the comparison data (CD) for the target living body to the trained model (MO), and outputs a classification result (RD).

IPC Classes  ?

• G16H 50/70 - ICT specially adapted for medical diagnosis, medical simulation or medical data miningICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for mining of medical data, e.g. analysing previous cases of other patients
• G16B 40/20 - Supervised data analysis

Abstract

The present invention addresses, pertaining to a technique for protein translation, the problem of promoting further translational efficiency by utilizing RNA which encodes proteins and a capped polynucleotide capable of binding to the RNA through complementary base pair formation, and addresses, pertaining to the production of a 5'-capped polynucleotide, the problem of improving the capping efficiency. The problems are solved by: configuring a 5'-capped polynucleotide and/or a single-stranded RNA to have a translational efficiency promoting structure; and inserting a base into a promoter such that the base sequence of the polynucleotide of a cap analog and the base sequence upstream from the transcription initiation point of the promoter are complementary in terms of a specific positional relationship.

IPC Classes  ?

• C12P 21/02 - Preparation of peptides or proteins having a known sequence of two or more amino acids, e.g. glutathione
• C12N 9/12 - Transferases (2.) transferring phosphorus containing groups, e.g. kinases (2.7)
• C12N 15/09 - Recombinant DNA-technology
• C12P 19/34 - Polynucleotides, e.g. nucleic acids, oligoribonucleotides

Abstract

The present invention provides a novel medicinal composition capable of exhibiting a preventive or remedial effect on type-I allergic diseases by a new mechanism different from those of conventional external drugs.　The present invention specifically provides an external drug in which the beneficial element is at least one element selected from the group consisting of titanium, manganese, copper, zinc, and silicon.

IPC Classes  ?

• A61K 33/00 - Medicinal preparations containing inorganic active ingredients
• A61K 9/10 - DispersionsEmulsions
• A61K 9/70 - Web, sheet or filament bases
• A61K 33/30 - ZincCompounds thereof
• A61K 33/32 - ManganeseCompounds thereof
• A61K 33/34 - CopperCompounds thereof
• A61P 17/00 - Drugs for dermatological disorders
• A61P 37/08 - Antiallergic agents

Abstract

The purpose of the present invention is to newly provide a mesoporous metal thin film and a method for producing a mesoporous metal thin film.　This mesoporous metal thin film is formed on a substrate, wherein (i) the surface of the substrate is made of an insulating material, or (ii) the material constituting the surface of the substrate is a metal having a higher ionization tendency than the metal forming the mesoporous metal thin film, and a gap is partially provided between the substrate and the mesoporous metal thin film.

IPC Classes  ?

• C23C 18/44 - Coating with noble metals using reducing agents
• C23C 18/18 - Pretreatment of the material to be coated
• C23C 18/42 - Coating with noble metals

Abstract

Provided is a technology that makes it possible to reduce the amount of carbon dioxide emitted during production of hydrogen. This hydrogen production device comprises: a detonation-type combustion furnace that uses supplied hydrogen and supplied oxidation gas to cause detonation; and a decomposition furnace that thermally decomposes supplied hydrocarbon to generate hydrogen and carbon, wherein one furnace among the detonation-type combustion furnace and the decomposition furnace is formed in a cylindrical shape extending in the longitudinal direction, and is provided inside the other furnace formed in a tubular shape extending in the longitudinal direction.

IPC Classes  ?

• C01B 3/24 - Production of hydrogen or of gaseous mixtures containing hydrogen by decomposition of gaseous or liquid organic compounds of hydrocarbons
• B01J 3/08 - Application of shock waves for chemical reactions or for modifying the crystal structure of substances

Abstract

It has been found that SDF4 in a body fluid sample can be a marker for detecting a cancer patient with good sensitivity and specificity. Gastric cancer, breast cancer, colorectal cancer, pancreatic cancer, esophageal cancer, hepatic cancer, liposarcoma, bladder cancer, brain tumor, head and neck cancer, gallbladder cancer, ovarian cancer, tongue cancer, or uterine cancer can be detected by using a reagent that specifically detects the SDF4. The measurement of the SDF4 in the body fluid sample is an examination method capable of detecting various types of cancer with a single examination, and can be used for mass screening for cancer. Moreover, early-stage cancer can also be detected with good sensitivity and specificity, and thus cancer can be discovered at an early stage, leading to treatment.

IPC Classes  ?

• G01N 33/68 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving proteins, peptides or amino acids
• G01N 33/543 - ImmunoassayBiospecific binding assayMaterials therefor with an insoluble carrier for immobilising immunochemicals
• G01N 33/574 - ImmunoassayBiospecific binding assayMaterials therefor for cancer

Abstract

A method of estimating a health score is disclosed. The health score includes a knee condition score for quantitatively evaluating a knee condition of a user. The estimating method includes acquiring a data provider feature that is a feature correlated with the knee condition from measurement information indicating temporal changes in forces applied to multiple parts of a sole of each of multiple data providers, generating a learning model by learning a correlation between the data provider feature and the knee condition, acquiring a user feature from measurement information indicating temporal changes in forces applied to multiple parts of a sole of the user, and estimating the knee condition of the user as the knee condition score by providing the learning model with the user feature.

IPC Classes  ?

• G16H 50/30 - ICT specially adapted for medical diagnosis, medical simulation or medical data miningICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for calculating health indicesICT specially adapted for medical diagnosis, medical simulation or medical data miningICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for individual health risk assessment
• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• A61B 5/11 - Measuring movement of the entire body or parts thereof, e.g. head or hand tremor or mobility of a limb
• G16H 10/20 - ICT specially adapted for the handling or processing of patient-related medical or healthcare data for electronic clinical trials or questionnaires
• G16H 10/60 - ICT specially adapted for the handling or processing of patient-related medical or healthcare data for patient-specific data, e.g. for electronic patient records
• G16H 50/70 - ICT specially adapted for medical diagnosis, medical simulation or medical data miningICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for mining of medical data, e.g. analysing previous cases of other patients

Abstract

The present invention addresses the problem of providing a novel tumor treatment technology targeting meflin.　The present invention provides an immunocompetent cell in which an anti-meflin single-stranded antibody is expressed on the surface thereof, wherein a light-chain variable region in the anti-meflin single-stranded antibody comprises the amino acid sequence represented by SEQ ID NO: 6 and a heavy-chain variable region in the anti-meflin single-stranded antibody comprises the amino acid sequence represented by SEQ ID NO: 8.

IPC Classes  ?

• C12N 15/62 - DNA sequences coding for fusion proteins
• A61K 35/17 - LymphocytesB-cellsT-cellsNatural killer cellsInterferon-activated or cytokine-activated lymphocytes
• A61P 35/00 - Antineoplastic agents
• C12N 5/10 - Cells modified by introduction of foreign genetic material, e.g. virus-transformed cells
• C12N 15/12 - Genes encoding animal proteins
• C12N 15/13 - Immunoglobulins
• C12N 15/63 - Introduction of foreign genetic material using vectorsVectorsUse of hosts thereforRegulation of expression

Abstract

Provided is a compound having anti-Entamoeba histolytica activity. The present invention is a compound represented by general formula (1), a salt thereof, or a solvate thereof.

IPC Classes  ?

• C07D 303/16 - Compounds containing oxirane rings with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms by esterified hydroxyl radicals
• A61K 31/336 - Heterocyclic compounds having oxygen as the only ring hetero atom, e.g. fungichromin having three-membered rings, e.g. oxirane, fumagillin
• A61K 31/4427 - Non-condensed pyridinesHydrogenated derivatives thereof containing further heterocyclic ring systems
• A61P 3/04 - AnorexiantsAntiobesity agents
• A61P 33/04 - Amoebicides
• A61P 35/00 - Antineoplastic agents
• C07D 303/14 - Compounds containing oxirane rings with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms by free hydroxyl radicals
• C07D 405/14 - Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing three or more hetero rings
• C12P 7/26 - Ketones

Abstract

The present invention is provided to maintain the state of an outer peripheral part of a substrate so as not to cause inconvenience in manufacturing through a manufacturing process in a semiconductor manufacturing process.　This method for forming a protective film on an outer peripheral part including a bevel part of a substrate includes: a step for performing trim processing over the entire periphery of the outer peripheral part on at least one surface of a front surface and a rear surface of the substrate; and a step for forming a protective film on the outer peripheral part, the protective film being formed on the surface subjected to the trim processing such that the surface of the protective film becomes a surface flush with or recessed, with respect to the surface of the substrate.

IPC Classes  ?

• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• C23C 16/27 - Diamond only
• C30B 33/08 - Etching

Abstract

A target for a neutron generation device includes a target material that is to be irradiated with a proton beam to generate neutrons; a substrate in which a recessed portion that holds the target material is provided; and a metal foil for sealing the target material held in the recessed portion. The target material is a lithium alloy material in which a part or an entire portion of lithium is alloyed. The target material and the substrate are alloyed and joined together. A method for producing a target involves placing a precursor made of metal lithium or a lithium alloy in the recessed portion; alloying the precursor and the substrate with each other to be joined together by heating the substrate and the precursor to melt the precursor, and then, solidifying the precursor; and joining the metal foil on the substrate to which the precursor has been joined.

IPC Classes  ?

• H05H 6/00 - Targets for producing nuclear reactions
• G21K 5/08 - Holders for targets or for objects to be irradiated

Abstract

Provided is a nucleoside derivative or a salt thereof, which is represented by formula (1) or (2). (In formula (1) and formula (2), R1denotes a hydrogen atom, a hydroxyl group, a hydroxyl group in which the hydrogen atom is substituted by an alkyl group or an alkenyl group, or a protected group. In formula (1) and formula (2), R2and R4nnR5R6(n is 0 or 1, and R5and R6may be the same as, or different from, each other and each denote a hydrogen atom, a hydroxyl group, a protected hydroxyl group, a mercapto group, a protected mercapto group, a lower alkoxy group, a cyano-lower alkoxy group, an amino group or a substituted amino group. However, if n is 1, R5and R6cannot both be hydrogen atoms. R3denotes NHR7(R7 denotes a hydrogen atom, an alkyl group, an alkenyl group or a protecting group for an amino group, and B denotes a purin-9-yl group, a 2-oxo-pyrimidin-1-yl group, a substituted purin-9-yl group or a substituted 2-oxo-pyrimidin-1-yl group.)

IPC Classes  ?

• C07H 19/067 - Pyrimidine radicals with ribosyl as the saccharide radical
• A61K 31/712 - Nucleic acids or oligonucleotides having modified sugars, i.e. other than ribose or 2'-deoxyribose
• A61K 31/7072 - Compounds having saccharide radicals and heterocyclic rings having nitrogen as a ring hetero atom, e.g. nucleosides, nucleotides containing six-membered rings with nitrogen as a ring hetero atom containing condensed or non-condensed pyrimidines having oxo groups directly attached to the pyrimidine ring, e.g. cytidine, cytidylic acid having two oxo groups directly attached to the pyrimidine ring, e.g. uridine, uridylic acid, thymidine, zidovudine
• A61K 31/7125 - Nucleic acids or oligonucleotides having modified internucleoside linkage, i.e. other than 3'-5' phosphodiesters
• A61P 43/00 - Drugs for specific purposes, not provided for in groups
• C07H 19/073 - Pyrimidine radicals with 2-deoxyribosyl as the saccharide radical
• C12N 15/09 - Recombinant DNA-technology

Abstract

A data processing device 1 processes multi-dimensional spatiotemporal data. The data processing device 1 comprises: a first matrix generating unit 11 that generates a first matrix having temporal information of the spatiotemporal data as rows and spatial information as columns; a second matrix generating unit 12 that executes a fast Fourier transform on each component of the first matrix to generate a second matrix having frequency information after the fast Fourier transform as rows and spatial information as columns; a column extracting unit 13 that extracts at least one column from the second matrix as a column vector; and a third matrix generating unit 14 that executes an inverse fast Fourier transform on the extracted column vector to reconstruct the spatiotemporal data, and generates a third matrix having temporal information as rows and spatial information as columns.

IPC Classes  ?

• G06F 17/14 - Fourier, Walsh or analogous domain transformations

Abstract

The purpose of the present invention is to provide a highly safe soil disease inhibitor capable of effectively inhibiting onset of soil disease.　The present invention relates to a soil disease inhibitor containing S-allylcysteine ​​or a salt thereof. The soil disease inhibitor according to the present invention preferably further contains an amino acid or a salt thereof. By applying, to the soil, the soil disease inhibitor according to the present invention, soil disease may be suppressed.

IPC Classes  ?

• A01N 37/44 - Biocides, pest repellants or attractants, or plant growth regulators containing organic compounds containing a carbon atom having three bonds to hetero atoms with at the most two bonds to halogen, e.g. carboxylic acids containing at least one carboxylic group or a thio-analogue, or a derivative thereof, and a nitrogen atom attached to the same carbon skeleton by a single or double bond, this nitrogen atom not being a member of a derivative or of a thio-analogue of a carboxylic group, e.g. amino-carboxylic acids
• A01N 43/50 - 1,3-DiazolesHydrogenated 1,3-diazoles
• A01P 3/00 - Fungicides

Abstract

Provided is a gallium nitride production method that makes it possible to improve the conductivity of an n-type gallium nitride substrate. The gallium nitride production method uses a vapor-phase growth method in which an organic metal is not used as a gallium raw material. The production method comprises a step for supplying a first raw material gas containing gallium into a reaction container in which a substrate is arranged. The production method further comprises a step for supplying, into the reaction container, a second raw material gas that contains nitrogen and reacts with the first raw material gas. The production method also comprises a step for supplying, into the reaction container, a third raw material gas containing tin. The step for supplying the first raw material gas, the step for supplying the second raw material gas, and the step for supplying the third raw material gas are carried out within a range in which the substrate temperature is from 700°C to 1100°C.

IPC Classes  ?

• C30B 29/38 - Nitrides
• C30B 25/18 - Epitaxial-layer growth characterised by the substrate

Abstract

The present invention provides a method for separating pituitary hormone-producing cells and/or progenitor cells thereof, said method comprising a step for separating CD49c-expressing cells from a cell aggregate including adenohypophysis and/or a progenitor tissue thereof, and a hypothalamic neuroepithelial tissue.

IPC Classes  ?

• C12N 5/071 - Vertebrate cells or tissues, e.g. human cells or tissues
• A61K 35/30 - NervesBrainEyesCorneal cellsCerebrospinal fluidNeuronal stem cellsNeuronal precursor cellsGlial cellsOligodendrocytesSchwann cellsAstrogliaAstrocytesChoroid plexusSpinal cord tissue

Abstract

A gallium oxide film production apparatus includes: a reaction chamber; a substrate disposition portion located in the reaction chamber and configured to dispose a substrate for growing a gallium oxide; a gallium element supply device configured to supply a gallium element to the substrate disposition portion; an oxygen element supply device configured to supply oxygen constituent particles to the substrate disposition portion; and a mixed gas supply device configured to supply a mixed gas containing oxygen and ozone to the oxygen element supply device. The oxygen element supply device includes a plasma generation unit configured to generate plasma from the mixed gas.

IPC Classes  ?

• C30B 25/08 - Reaction chambersSelection of materials therefor
• C30B 25/10 - Heating of the reaction chamber or the substrate
• C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
• C30B 29/16 - Oxides

Abstract

The present invention addresses the problem of providing a technology for controlling the size of seeds. The problem is solved by a modified plant body in which at least one gene selected from the group consisting of callose degradation enzyme genes and callose synthase enzyme genes is introduced or modified, and, by having the introduction or modification, the expression and/or function of the gene is controlled.

IPC Classes  ?

• C12N 15/56 - Hydrolases (3) acting on glycosyl compounds (3.2), e.g. amylase, galactosidase, lysozyme
• A01H 1/00 - Processes for modifying genotypes
• A01H 5/00 - Angiosperms, i.e. flowering plants, characterised by their plant partsAngiosperms characterised otherwise than by their botanic taxonomy
• A01H 5/10 - Seeds
• C12N 15/54 - Transferases (2)
• C12Q 1/34 - Measuring or testing processes involving enzymes, nucleic acids or microorganismsCompositions thereforProcesses of preparing such compositions involving hydrolase
• C12Q 1/48 - Measuring or testing processes involving enzymes, nucleic acids or microorganismsCompositions thereforProcesses of preparing such compositions involving transferase

Abstract

A method of producing an ultraviolet laser diode with a low oscillation threshold current density includes stacking a first cladding layer, a light-emitting layer, and a second cladding layer on a substrate in this order to form a nitride semiconductor laminate (step S101), etching at least a portion of the nitride semiconductor laminate to form a mesa structure and setting the ratio between the length of the resonator end faces and the length of the side surfaces of the mesa structure in plan view between 1:5 and 1:500 (step S102), disposing first conductive material on a portion of a first area and applying heat treatment of 400° C. or higher to form a first electrode (step S103), and disposing a second conductive material in an area on the second cladding layer, at a distance of 5 μm or more from the side surfaces, to form a second electrode (step S104).

IPC Classes  ?

• H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
• H01S 5/02 - Structural details or components not essential to laser action
• H01S 5/042 - Electrical excitation
• H01S 5/227 - Buried mesa structure
• H01S 5/32 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures

Abstract

This gas treatment device is provided with: an absorber that brings a gas to be treated, which contains an acidic compound, and a treatment liquid, which is in a state where an amine and a second component are mixed prior to the absorption of an acidic compound and is phase-separated into a first phase portion that mainly contains the amine and a second phase portion that mainly contains the second component by absorption of an acidic compound, into contact with each other so as to have the acidic compound contained in the gas to be treated absorbed in the treatment liquid; a regenerator that separates the acidic compound from the treatment liquid; and a treatment liquid recovery unit that brings the second phase portion, which has flowed out from the absorber, into contact with a treatment liquid entraining gas in the absorber so as to recover the treatment liquid entrained in the treatment liquid entraining gas.

IPC Classes  ?

• B01D 53/14 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by absorption
• B01D 53/62 - Carbon oxides
• B01D 53/78 - Liquid phase processes with gas-liquid contact

Abstract

This information processing device is provided with a state information acquisition unit and an analysis processing unit. The state information acquisition unit continuously acquires objective state information of a patient suffering from a disease, and subjective state information based on the patient's subjectivity. On the basis of the objective state information and the subjective state information, and using a predetermined information processing technique, the analysis processing unit continuously executes predetermined analysis processing including setting of a policy recommended to be executed by the patient in order to improve the symptom of the disease, and outputs the result of the analysis processing in a manner that can be perceived by the patient.

IPC Classes  ?

• G16H 20/30 - ICT specially adapted for therapies or health-improving plans, e.g. for handling prescriptions, for steering therapy or for monitoring patient compliance relating to physical therapies or activities, e.g. physiotherapy, acupressure or exercising
• G16H 50/20 - ICT specially adapted for medical diagnosis, medical simulation or medical data miningICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for computer-aided diagnosis, e.g. based on medical expert systems

Abstract

A substrate with a β-gallium oxide film includes a Si single crystal substrate and a β-gallium oxide film provided on the Si single crystal substrate. A substrate with a β-gallium oxide film includes a gallium nitride single crystal substrate and a β-gallium oxide film provided on the gallium nitride single crystal substrate.

IPC Classes  ?

• H01L 29/26 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , ,
• C30B 25/10 - Heating of the reaction chamber or the substrate
• C30B 25/18 - Epitaxial-layer growth characterised by the substrate
• C30B 29/06 - Silicon
• C30B 29/16 - Oxides
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

This information processing device is provided with a recommended rehabilitation processing unit, an actual-results information acquisition unit, and a nudge processing unit. The recommended rehabilitation processing unit acquires recommended rehabilitation information indicating recommended rehabilitation for a patient suffering from a disease, and outputs the recommended rehabilitation information in such a manner that the patient can perceive the recommended rehabilitation. The actual-results information acquisition unit acquires rehabilitation actual-results information indicating the status of performance of rehabilitation by the patient. The nudge processing unit executes, on the basis of the recommended rehabilitation information and the rehabilitation actual-results information, nudge processing for prompting the patient to perform behavioral economics-based appropriate rehabilitation.

IPC Classes  ?

• G16H 20/30 - ICT specially adapted for therapies or health-improving plans, e.g. for handling prescriptions, for steering therapy or for monitoring patient compliance relating to physical therapies or activities, e.g. physiotherapy, acupressure or exercising

Abstract

The purpose of the present invention is to provide a program for outputting data indicating the shape of an ablation lesion due to ablation in arrhythmia treatment. The present invention provides a program for outputting data indicating the shape of an ablation lesion due to ablation in arrhythmia treatment in a subject. The program is generated by a method including a step for inputting, as learning data, a plurality of pieces of data indicating an active index or a passive index of ablation in arrhythmia treatment and the shape of the ablation lesion due to ablation in arrhythmia treatment, into an artificial intelligence model, and causing the artificial intelligence model to learn.

IPC Classes  ?

• A61B 18/12 - Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by heating by passing a current through the tissue to be heated, e.g. high-frequency current
• A61B 34/10 - Computer-aided planning, simulation or modelling of surgical operations
• G16H 20/00 - ICT specially adapted for therapies or health-improving plans, e.g. for handling prescriptions, for steering therapy or for monitoring patient compliance
• G16H 50/70 - ICT specially adapted for medical diagnosis, medical simulation or medical data miningICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for mining of medical data, e.g. analysing previous cases of other patients

Abstract

Provided are an acidic gas-absorbing liquid and an acidic gas reduction method that can reduce the energy required for recovering acidic gas from gas, even if the gas contains moisture, and that has little impact on solvent loss. The acidic gas-absorbing liquid according to the present invention reversibly absorbs and desorbs carbon dioxide, and contains an oxygen-containing polymer and an amine compound. The oxygen-containing polymer has at least one group selected from the group consisting of an oxyalkylene group, a carbonate group, and an ester group, and has a number average molecular weight of 250-20000, a boiling point of 200°C or higher, and a solubility parameter of 15.0 (MPa)1/2or more and less than 19.5 (MPa)1/2. The amine compound has a solubility parameter of 13.0-25.5 (MPa)1/2.

IPC Classes  ?

• B01D 53/14 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by absorption
• B01D 53/62 - Carbon oxides
• B01D 53/78 - Liquid phase processes with gas-liquid contact
• C08K 5/17 - AminesQuaternary ammonium compounds
• C08L 67/00 - Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chainCompositions of derivatives of such polymers
• C08L 69/00 - Compositions of polycarbonatesCompositions of derivatives of polycarbonates
• C08L 71/02 - Polyalkylene oxides

Abstract

An optical spectrum generation device (1) comprises: a pulse light source (10) which generates pulsed light; an optical modulator (20) which modulates pulsed light of a predetermined wavelength from the pulse light source (10); and a non-linear loop mirror (30) which is configured from an optical splitter (31) and a loop-shaped optical fibre (32) connected to two ends on the same side of said optical splitter (31). The optical modulator (20) is disposed on the loop of the non-linear loop mirror (30). As a result of the non-linear effect, the optical fibre (32) of the non-linear loop mirror (30) generates a peak in the pulsed light modulated by the optical modulator (20). The optical path length from the optical splitter (31) to the optical modulator (20) differs depending on whether the loop of the non-linear loop mirror (30) is traced clockwise or counterclockwise.

IPC Classes  ?

• G02F 1/365 - Non-linear optics in an optical waveguide structure

Abstract

Provided are an acidic gas-absorbing liquid and an acidic gas reduction method that can reduce the energy required for recovering acidic gas from gas and that has little impact on solvent loss. The acidic gas-absorbing liquid according to the present invention reversibly absorbs and desorbs carbon dioxide, and contains an oxygen-containing polymer and an amine compound. The oxygen-containing polymer has at least one group selected from the group consisting of an oxyalkylene group, a carbonate group, and an ester group, and has a number average molecular weight of 300-4000, a boiling point of 200°C or higher, and a solubility parameter of 19.5-26.0 (MPa)1/2. The difference between the solubility parameter of the oxygen-containing polymer and the solubility parameter of the amine compound is 4.0-6.3 (MPa)1/2.

IPC Classes  ?

• B01D 53/14 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by absorption
• C08K 5/17 - AminesQuaternary ammonium compounds
• C08L 67/00 - Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chainCompositions of derivatives of such polymers
• C08L 69/00 - Compositions of polycarbonatesCompositions of derivatives of polycarbonates
• C08L 71/02 - Polyalkylene oxides

Abstract

A manipulation system (310) comprises a control device (330). The control device (330) comprises: a movement amount acquisition unit (56) that acquires a movement amount of a manipulator; a position identification unit (58) that identifies the position of a sample and the position of the manipulator on the basis of an image captured by an imaging device (24); and a calculation unit (376) that calculates a target position or a target movement amount for the manipulator to enable the performance of a predetermined operation on the sample, such calculation being on the basis of the position of the sample and the position or the movement amount of the manipulator.

IPC Classes  ?

• G02B 21/32 - Micromanipulators structurally combined with microscopes
• B25J 7/00 - Micromanipulators
• C12M 1/00 - Apparatus for enzymology or microbiology
• G02B 21/36 - Microscopes arranged for photographic purposes or projection purposes

Abstract

The present invention relates to a method for manufacturing an oxide semiconductor, the method comprising: ion-implanting a transition metal ion in the vicinity of the surface of a gallium oxide-containing semiconductor layer; and heat-treating the ion-implanted semiconductor layer in an oxygen-containing atmosphere.

IPC Classes  ?

• H01L 21/425 - Bombardment with radiation with high-energy radiation producing ion implantation
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 29/861 - Diodes
• H01L 29/868 - PIN diodes

Abstract

A molecular film includes: a tungsten-oxygen octahedral block.

IPC Classes  ?

• C09D 5/32 - Radiation-absorbing paints
• C09D 1/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances

Abstract

Semiconductor nanoparticles that include a compound semiconductor mainly containing a Ag component, a Ge component, and a S component, wherein a content ratio of the Ag component to the Ge component is 1.0 or more and less than 7.5, in terms of molar ratio, and an average particle size of the semiconductor nanoparticles is 9 nm or less

IPC Classes  ?

• C09K 11/66 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing germanium, tin or lead
• B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
• B82Y 40/00 - Manufacture or treatment of nanostructures
• C01G 17/00 - Compounds of germanium

Abstract

Water-soluble nanoclusters that include gold, and a bisTV-heterocyclic carbene ligand that includes at least one water soluble moiety are described. The water soluble moiety comprises a polyether, a carboxylic acid, a carboxylate, an ammonium group, a sugar, or a protein. The water soluble moiety is located on the wingtips of the bisNHC ligands or the water soluble moiety is located on the backbone of the bisNHC ligands. The nanocluster may further comprise a targeting ligand such as a derivative of folic acid, or the metal nanocluster may further comprise at least one clickable group such as an azide. As described herein, the water-soluble Atir, nanoclustcrs protected by NHC ligands have been synthesized and characterized. Their water solubility properties aid in biomedical testing and application of this material. Applications for the nanoclusters include photosensitizing and cell imaging due to the properties of luminescence when exposed to radiation.

IPC Classes  ?

• C07D 235/04 - BenzimidazolesHydrogenated benzimidazoles
• A61K 41/00 - Medicinal preparations obtained by treating materials with wave energy or particle radiation
• A61K 49/00 - Preparations for testing in vivo
• A61P 35/00 - Antineoplastic agents
• B01J 19/08 - Processes employing the direct application of electric or wave energy, or particle radiationApparatus therefor
• C07D 403/10 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group containing two hetero rings linked by a carbon chain containing aromatic rings
• C07D 519/00 - Heterocyclic compounds containing more than one system of two or more relevant hetero rings condensed among themselves or condensed with a common carbocyclic ring system not provided for in groups or
• C07H 15/26 - Acyclic or carbocyclic radicals, substituted by hetero rings
• C07K 16/00 - Immunoglobulins, e.g. monoclonal or polyclonal antibodies
• C07K 16/28 - Immunoglobulins, e.g. monoclonal or polyclonal antibodies against material from animals or humans against receptors, cell surface antigens or cell surface determinants
• C09K 11/06 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing organic luminescent materials
• C12M 1/34 - Measuring or testing with condition measuring or sensing means, e.g. colony counters
• G01D 5/26 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light
• G01N 21/62 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
• G01N 24/08 - Investigating or analysing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects by using nuclear magnetic resonance
• G01R 33/28 - Details of apparatus provided for in groups
• H10K 30/35 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
• H10K 30/50 - Photovoltaic [PV] devices

Abstract

The present invention aims to improve the quality of a protective film for protecting an outer peripheral part of a substrate.　The present invention provides a method for forming, with use of a plasma, a protective film on an outer peripheral part, including a bevel part, of a substrate, the method comprising: a step in which a second surface of the substrate, which has a first surface and the second surface opposite to each other, is placed on a stage that is smaller than the size of the substrate, in such a manner that the outer peripheral part of the substrate protrudes from the outer edge of the stage; a step in which at least a part of the outer peripheral part of the substrate in the circumferential direction is caused to face an electrode; a step in which a first shielding structure is brought into contact with the first surface of the substrate, the first shielding structure separating the outer peripheral part and the region inside the outer peripheral part from each other, and/or a second shielding structure is brought into contact with the second surface of the substrate, the second shielding structure separating the outer peripheral part and the region inside the outer peripheral part from each other; and a step in which a protective film is formed on the outer peripheral part of the substrate by supplying a film forming gas between the outer peripheral part of the substrate and the electrode.

IPC Classes  ?

• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• C23C 16/26 - Deposition of carbon only
• C23C 16/27 - Diamond only
• C23C 16/42 - Silicides
• C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Abstract

The present invention provides a method for efficiently producing a cell aggregate containing pituitary hormone-producing cells from pluripotent stem cells.

IPC Classes  ?

• C12N 5/071 - Vertebrate cells or tissues, e.g. human cells or tissues

Abstract

Luminescent homometallic and heterometallic nanoclusters that include ditopic ligands with at least one N-heterocyclic carbene are presented. High photoluminescence quantum yields are reported, including one at 68%. These nanoclusters are thermally stable and are suitable for imaging, as photosensitizers, photosensors, and for photodynamic or X- ray photodynamic therapy..

IPC Classes  ?

• C07F 1/12 - Gold compounds
• A61K 41/00 - Medicinal preparations obtained by treating materials with wave energy or particle radiation
• A61K 49/00 - Preparations for testing in vivo
• A61P 35/00 - Antineoplastic agents
• B01J 19/12 - Processes employing the direct application of electric or wave energy, or particle radiationApparatus therefor employing electromagnetic waves
• B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
• C07F 19/00 - Metal compounds according to more than one of main groups
• C09K 11/06 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing organic luminescent materials
• G01J 1/00 - Photometry, e.g. photographic exposure meter
• G01R 33/56 - Image enhancement or correction, e.g. subtraction or averaging techniques
• H10K 30/50 - Photovoltaic [PV] devices

Abstract

A manipulation system includes: a manipulator for manipulating a sample; a manipulator drive mechanism for moving the manipulator; an imaging apparatus for imaging the sample through an objective lens; a control apparatus that generates force information indicating a magnitude of a force sensation presented to a user, based on an image captured by the imaging apparatus; and a force sensation presentation apparatus configured to receive an input operation from the user for designating a position of the manipulator and to present a force sensation according to the force information generated by the control apparatus to the user.

IPC Classes  ?

• B25J 11/00 - Manipulators not otherwise provided for
• B25J 13/06 - Control stands, e.g. consoles, switchboards
• B25J 13/08 - Controls for manipulators by means of sensing devices, e.g. viewing or touching devices
• B25J 15/06 - Gripping heads with vacuum or magnetic holding means

Abstract

The present invention aims to provide a method for efficiently producing a cell population containing pituitary tissue from pluripotent stem cells. The method for producing a cell population containing pituitary tissue includes the following steps (1) and (2): The present invention aims to provide a method for efficiently producing a cell population containing pituitary tissue from pluripotent stem cells. The method for producing a cell population containing pituitary tissue includes the following steps (1) and (2): (1) a first step of culturing the pluripotent stem cells in the presence of a c-jun N-terminal kinase (JNK) signal transduction pathway inhibiting substance and a Wnt signal transduction pathway inhibiting substance, (2) a second step of culturing the cell population obtained in the first step in the presence of a BMP signal transduction pathway activating substance and a Sonic hedgehog signal transduction pathway activating substance, thereby obtaining a cell population containing pituitary tissue.

IPC Classes  ?

• C12N 5/071 - Vertebrate cells or tissues, e.g. human cells or tissues

Abstract

A urea production device includes: a body portion; a first electrode disposed inside the body portion; and a second electrode which is disposed such that at least a part thereof faces the first electrode. The urea production device includes a gas flow path formed between the body portion and either the first electrode or the second electrode, a first raw material introduction path having one side connected to the gas flow path and another side connected to a carbon dioxide storage source, and a second raw material introduction path which is a raw material introduction path different from the first raw material introduction path and which has one side connected to the gas flow path and another side connected to an ammonia storage source. A voltage is to be applied between the first electrode and the second electrode and electric discharge can be generated.

IPC Classes  ?

• C07C 273/04 - Preparation of urea or its derivatives, i.e. compounds containing any of the groups the nitrogen atoms not being part of nitro or nitroso groups of urea, its salts, complexes or addition compounds from carbon dioxide and ammonia

Abstract

The main purpose of the present disclosure is to provide a composition for preventing and/or ameliorating cancer. The inventors of the present invention have found that the above problem can be solved by regulatory T cells expressing adiponectin. According to the present disclosure, provided is a composition for preventing and/or ameliorating cancer, the composition containing regulatory T cells expressing adiponectin.

IPC Classes  ?

• A61K 35/17 - LymphocytesB-cellsT-cellsNatural killer cellsInterferon-activated or cytokine-activated lymphocytes
• A61P 35/00 - Antineoplastic agents
• C12N 5/0783 - T cellsNK cellsProgenitors of T or NK cells

Abstract

An interface information identification device of the present disclosure includes: a light source configured to emit light to heat a sample, the sample including a first layer and a second layer overlapping the first layer; an irradiating unit configured to homogenize an intensity distribution of light from the light source to irradiate an entire surface of the first layer of the sample with the light; a detecting unit configured to detect a temperature distribution on a surface of the second layer of the sample; and an identifying unit configured to identify information about an interface between the first layer and the second layer of the sample based on the temperature distribution detected by the detecting unit.

IPC Classes  ?

• G01N 25/18 - Investigating or analysing materials by the use of thermal means by investigating thermal conductivity
• G01N 25/72 - Investigating presence of flaws

Abstract

The present invention addresses the problem of providing a method capable of detecting or determining by a simple method a patient having a loss-of-function mutation in an SLC35C1 gene.　The present invention provides a method for determining whether or not, in a subject, a loss-of-function mutation occurs in an SLC35C1 gene encoding a GDP-fucose transporter or determining whether or not the subject is suspected to have the loss-of-function mutation, the method including a step for performing a hemagglutination reaction using blood from the subject and using a lectin or antibody capable of recognizing an erythrocyte sugar chain antigen containing fucose.

IPC Classes  ?

• G01N 33/53 - ImmunoassayBiospecific binding assayMaterials therefor

Abstract

Provided is an efficient method for producing semiconductor nanoparticles that exhibit band edge emission. The method comprises performing a first heat treatment of a first mixture, which contains a Cu salt, a Ag salt, a salt containing at least one of In or Ga, a gallium halide, and an organic solvent, to obtain first semiconductor nanoparticles. At least one of the Cu salt, the Ag salt, or the salt containing at least one of In or Ga in the first mixture contains a compound having a bond formed of a metal and sulfur.

IPC Classes  ?

• H01L 33/50 - Wavelength conversion elements
• C01G 15/00 - Compounds of gallium, indium, or thallium
• C09K 11/62 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing gallium, indium or thallium

Abstract

A method for detecting a Fusobacterium bacterium for diagnosing endometriosis according to one aspect of the present invention includes a step of detecting a Fusobacterium bacterium in a sample collected from a subject, wherein the detection of the presence of the Fusobacterium bacterium in the sample indicates that the subject is likely suffering from or likely to suffer from endometriosis. According to the present invention, a simple diagnosis of endometriosis becomes possible by detecting the causative bacterium of endometriosis.

IPC Classes  ?

• A61K 31/4164 - 1,3-Diazoles
• A61K 31/165 - Amides, e.g. hydroxamic acids having aromatic rings, e.g. colchicine, atenolol, progabide
• A61P 31/04 - Antibacterial agents
• C12Q 1/6851 - Quantitative amplification
• C12Q 1/689 - Nucleic acid products used in the analysis of nucleic acids, e.g. primers or probes for detection or identification of organisms for bacteria

Abstract

A device of the present invention includes: an irradiation unit configured to periodically irradiate an object with light to heat the object; an output power switching unit configured to switch an output power of light with which the object is irradiated by the irradiation unit at least between first and second output powers respectively providing first and second maximum output powers during one period; a first temperature distribution acquisition unit configured to obtain a first temperature distribution of the object that is a temperature distribution of the object heated by light of the first output power; a second temperature distribution acquisition unit configured to obtain a second temperature distribution of the object that is a temperature distribution of the object heated by light of the second output power; and an identification unit configured to identify information about thermal conductivity of the object based on the first and second temperature distributions.

IPC Classes  ?

• G01N 25/18 - Investigating or analysing materials by the use of thermal means by investigating thermal conductivity
• G01K 3/14 - Thermometers giving results other than momentary value of temperature giving differences of valuesThermometers giving results other than momentary value of temperature giving differentiated values in respect of space
• G01N 25/20 - Investigating or analysing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity

Abstract

The present invention addresses the problem of providing a prophylactic and/or therapeutic agent for hypertensive disorders of pregnancy, which has a physical property or a molecular weight that inhibits the passage through the placental barrier, has a pharmacological activity that mimics the original physiological function of the placenta and therefore has fewer adverse side effects, is safe for a mother body and a fetus, is stable for a long period, and can exert the efficacy thereof in vivo for a long period.　The present invention is a prophylactic/therapeutic agent for pregnancy-induced hypertension, which contains aminopeptidase A (APA) as an active ingredient, the prophylactic/therapeutic agent being characterized in that the APA is bound to an immunoglobulin Fc region through a peptide linker.

IPC Classes  ?

• A61K 47/68 - Medicinal preparations characterised by the non-active ingredients used, e.g. carriers or inert additivesTargeting or modifying agents chemically bound to the active ingredient the non-active ingredient being chemically bound to the active ingredient, e.g. polymer-drug conjugates the non-active ingredient being a modifying agent the modifying agent being an antibody, an immunoglobulin or a fragment thereof, e.g. an Fc-fragment
• A61K 38/48 - Hydrolases (3) acting on peptide bonds (3.4)
• A61K 47/65 - Peptidic linkers, binders or spacers, e.g. peptidic enzyme-labile linkers
• A61P 9/12 - Antihypertensives
• C07K 7/06 - Linear peptides containing only normal peptide links having 5 to 11 amino acids
• C07K 7/08 - Linear peptides containing only normal peptide links having 12 to 20 amino acids
• C07K 16/00 - Immunoglobulins, e.g. monoclonal or polyclonal antibodies
• C07K 19/00 - Hybrid peptides
• C12N 9/50 - Proteinases
• C12N 15/13 - Immunoglobulins
• C12N 15/57 - Hydrolases (3) acting on peptide bonds (3.4)
• C12N 15/62 - DNA sequences coding for fusion proteins

Abstract

It has been difficult to quantify the degree of epithelial-mesenchymal transition of peritoneal mesothelial cells from cell morphology, and no biomarker specific for epithelial-mesenchymal transition of mesothelial cells has been known.　Provided is a method for screening a substance for preventing or ameliorating a disease or symptom caused by peritoneal dissemination of ectopic cells, the method including the following steps: (a) a step for treating mesothelial cells with a candidate substance; (b) a step for determining the expression or activity level of LRRN4 (leucine rich repeat neuronal 4) in the mesothelial cells; and (c) a step for, when the expression or activity level of LRRN4 is increased as compared with the level before the treatment, then selecting the candidate substance as a substance for preventing or ameliorating a disease or symptom caused by peritoneal dissemination of ectopic cells.

IPC Classes  ?

• G01N 33/50 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing
• A61K 35/12 - Materials from mammalsCompositions comprising non-specified tissues or cellsCompositions comprising non-embryonic stem cellsGenetically modified cells
• A61P 15/00 - Drugs for genital or sexual disordersContraceptives
• A61P 35/04 - Antineoplastic agents specific for metastasis
• G01N 33/15 - Medicinal preparations
• G01N 33/68 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving proteins, peptides or amino acids

Abstract

Producing a semiconductor device having a semiconductor layer containing semiconducting carbon nanotube produced through a method including: mixing a first substance, a second substance which undergoes two-phase separation when mixed with the first substance in solution, an alkyl chain-containing surfactant, a steroidal surfactant, and a mixture of metallic and semiconducting carbon nanotubes with a solvent, to prepare a dispersion; and separating the dispersion into a first layer mainly containing the first substance and a second layer mainly containing the second substance, whereby the semiconducting carbon nanotube is transferred into one of the first and second layers, and the metallic carbon nanotube is transferred into the other layer; and the first substance is an α-glucan composed of glucose linked via α-glucosidic linkage and having a weight average molecular weight of 4,000 to 7,000 and a ratio of α-1, 6 linked glucose residues to the entire glucose residues of 40 to 70%.

IPC Classes  ?

• C01B 32/159 - Carbon nanotubes single-walled
• C01B 32/172 - Sorting
• C01B 32/174 - DerivatisationSolubilisationDispersion in solvents
• H10K 85/20 - Carbon compounds, e.g. carbon nanotubes or fullerenes

Abstract

Provided is a plasma CVD device (1) for manufacturing a carbon nano-material. The plasma CVD device (1) includes: a chamber (2) in which a substrate (4) on which a film of a carbon nano-material is formed is placed; and a plasma generation device (3) which generates an inductively coupled plasma inside the chamber (2). The plasma generation device (3) includes: a high-frequency antenna (31) having a flat surface (311) facing the surface (41) of the substrate (4) on which film formation is to be performed; and an insulating antenna cover (32) which covers the flat surface (31) of the high-frequency antenna (31).

IPC Classes  ?

• C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
• C23C 16/26 - Deposition of carbon only
• H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

A technology is provided to form p-type regions and to effectively reduce a contact resistance between the p-type region and an electrode. One embodiment of a nitride semiconductor device manufacturing method may include a magnesium layer formation step of forming a magnesium layer that comprises magnesium as a major component on a surface of a nitride semiconductor substrate. The method may include an annealing step of annealing the nitride semiconductor substrate on which the magnesium layer is formed.

IPC Classes  ?

• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/266 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation using masks
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/45 - Ohmic electrodes
• H01L 29/66 - Types of semiconductor device
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Abstract

An analysis method includes: acquiring a plurality of actual measurement data items at different measurement points measured by a measuring apparatus capable of measuring a measured quantity at a predetermined resolution; and generating, from the plurality of actual measurement data items, super resolution measurement data having a resolution improved by super resolution. A value of a hyperparameter used in super resolution is determined based on a difference between i) super resolution virtual measurement data generated, from virtual measurement data generated based on a predicted distribution of the measured quantity, by super resolution using the hyperparameter and ii) a distribution of the measured quantity.

IPC Classes  ?

• G06T 3/4053 - Scaling of whole images or parts thereof, e.g. expanding or contracting based on super-resolution, i.e. the output image resolution being higher than the sensor resolution

Abstract

It is possible to provide a method for producing an amino acid N-carboxyanhydride (NCA) in a short time without using water as a solvent by including a step A in which a first amino acid in which an amino group is protected by a carbamate protecting group and a first halogenating agent that is thionyl halide or oxalyl chloride are reacted in the presence of a first tertiary amine.

IPC Classes  ?

• C07D 263/44 - Two oxygen atoms
• C07K 1/08 - General processes for the preparation of peptides using protecting groups or activating agents using activating agents

Abstract

This etching method comprises a step (a), a step (b), and a step (c). In the step (a), a substrate comprising a mask film, which contains ruthenium and is provided with a predetermined pattern, and a silicon-containing film, which is provided under the mask film, is prepared in a chamber. In the step (b), a processing gas containing a hydrocarbon-containing gas and a fluorine-containing gas is supplied into the chamber. In the step (c), the silicon-containing film is etched via the mask film using a plasma that is generated from the processing gas supplied into the chamber.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

An image processing apparatus according to an embodiment includes processing circuitry. The processing circuitry is configured to obtain pixel values of at least three Magnetic Resonance (MR) images of mutually-different types. The processing circuitry is configured to generate a scatter diagram in which values based on the pixel values are arranged in a region having at least three-dimensional axes and which displays a value group related to a target tissue in such a manner that a value group related to a specific target serving as a reference is always displayed in the same position, and then cause a display to display the scatter diagram.

IPC Classes  ?

• G06T 11/20 - Drawing from basic elements, e.g. lines or circles
• G06T 7/00 - Image analysis
• G06T 7/11 - Region-based segmentation

Abstract

A system for terahertz pulse detection comprises an optical medium made of a nonlinear material, a broadband laser source configured to emit laser pulses towards a first side face of the optical medium, along a first direction normal to the first side face, and a terahertz radiation emitter configured to emit terahertz radiation towards an upper face of the optical medium, along a second direction at a first non-zero angle relative to the first direction. The laser pulses and the terahertz radiation synchronously propagate within the optical medium and interact with one another and with the optical medium to generate up-converted signals that exit the optical medium at a second side face opposite the first side face, along third directions at second non-zero angles relative to the first direction. An image acquisition device captures at least one image of the up-converted signals.

IPC Classes  ?

• G01J 11/00 - Measuring the characteristics of individual optical pulses or of optical pulse trains
• G02F 1/39 - Non-linear optics for parametric generation or amplification of light, infrared, or ultraviolet waves
• G02F 1/355 - Non-linear optics characterised by the materials used

Abstract

In a field effect transistor 1, a plurality of unit transistors are arranged side by side in one direction d1 and each have a source electrode S, a drain electrode D, and a gate electrode 4. A gate wire 10 extends in the one direction d1 and connects the plurality of gate electrodes 4 to one another. A signal input electrode G1 is connected to the gate wire 10. At least one impedance element 18a is connected to the gate wire 10 on the side closer to one end of the gate wire 10 in the one direction d1 than is the signal input electrode G1.

IPC Classes  ?

• H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
• H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
• H01L 21/338 - Field-effect transistors with a Schottky gate
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H03F 1/42 - Modifications of amplifiers to extend the bandwidth

Abstract

A method for purifying a nucleotide-based substance; including a protecting group introduction step of introducing a hydrophobic protecting group represented by the following formula (P1) or (P2) into a nucleotide-based substance to produce a hydrophobic nucleotide-based substance; an isolation and purification step of isolating and purifying the hydrophobic nucleotide-based substance under a hydrophobic environment; and a deprotection step of deprotecting the hydrophobic protecting group from the hydrophobic nucleotide-based substance to produce the nucleotide-based substance, A method for purifying a nucleotide-based substance; including a protecting group introduction step of introducing a hydrophobic protecting group represented by the following formula (P1) or (P2) into a nucleotide-based substance to produce a hydrophobic nucleotide-based substance; an isolation and purification step of isolating and purifying the hydrophobic nucleotide-based substance under a hydrophobic environment; and a deprotection step of deprotecting the hydrophobic protecting group from the hydrophobic nucleotide-based substance to produce the nucleotide-based substance, wherein R1 represents a linear or branched alkyl group having 1 to 30 carbon atoms, R4 represents hydrogen or a linear or branched alkyl group having 1 to 10 carbon atoms, R2, R3, R5 and R6 represent hydrogen, a linear or branched alkyl group having 1 to 10 carbon atoms, or the like, and may be the same or different; and * means a bond with a nucleotide-based substance.

IPC Classes  ?

• C07H 1/06 - SeparationPurification
• A61K 31/7105 - Natural ribonucleic acids, i.e. containing only riboses attached to adenine, guanine, cytosine or uracil and having 3'-5' phosphodiester links
• C07F 9/24 - Esteramides
• C07H 17/02 - Heterocyclic radicals containing only nitrogen as ring hetero atoms
• C07H 21/00 - Compounds containing two or more mononucleotide units having separate phosphate or polyphosphate groups linked by saccharide radicals of nucleoside groups, e.g. nucleic acids

Abstract

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

IPC Classes  ?

• H01L 33/50 - Wavelength conversion elements
• C09K 11/62 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing gallium, indium or thallium
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Abstract

The present invention improves the accuracy of sample classification from reference to a mass analysis result. This information processing device comprises a model acquisition unit, an object data acquisition unit, and a classification execution unit. The model acquisition unit acquires a trained model using comparison data as input and a sample classification result as output. The comparison data include data indicating a magnitude relationship between a peak intensity of a substance belonging to one substance group and a peak intensity of a substance belonging to the other substance group for at least one substance group pair which is a pair of two substance groups each constituted from at least one substance in a mass analysis result for a plurality of substances included in a sample. The object data acquisition unit acquires comparison data about an object sample. The classification execution unit executes classification of the object sample by inputting comparison data about the object sample to the trained model, and outputs a classification result.

IPC Classes  ?

• G01N 27/62 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosolsInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electric discharges, e.g. emission of cathode
• G01N 33/50 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing

Abstract

The present invention addresses the problem of providing a method for producing an elastin-like polypeptide without relying on genetic recombination technologies.　Provided is a method for producing a polypeptide that contains an elastin-like block peptide sequence containing a G sequence block comprising (SEQ ID NO: 1: X1GGX2nn (wherein: X1s are the same as or different from each other and each independently represent V or L; X2s are the same as or different from each other and each independently represent V or L; and n is an integer of 2 or greater) and a P sequence block comprising (SEQ ID NO: 2: VPGX3mm (wherein: X3s are the same as or different from each other and each independently represent an arbitrary amino acid; and m is an integer of 5 or greater), the method comprising: (a) a step for solid-phase synthesizing the polypeptide and/or divided fragments of the polypeptide; and/or (b) a step for linking the terminal regions of the plurality of divided fragments of the polypeptide by a chemical reaction.

IPC Classes  ?

• C07K 1/04 - General processes for the preparation of peptides on carriers
• C07K 14/00 - Peptides having more than 20 amino acidsGastrinsSomatostatinsMelanotropinsDerivatives thereof
• C07K 14/78 - Connective tissue peptides, e.g. collagen, elastin, laminin, fibronectin, vitronectin or cold insoluble globulin [CIG]
• C07K 19/00 - Hybrid peptides

Abstract

Provided is a chip that makes it possible to detect nucleic acid in a biological sample (and, in particular, a plant sample) with greater sensitivity.　A nucleic acid detection chip according to the present invention includes an inorganic base material and a nucleic acid probe. (x) The nucleic acid probe is linked via an amino group that is linked to the inorganic base material and/or (y) the nucleic acid probe is linked by an amide bond between an amino group that is linked to the inorganic base material and a nucleic acid probe that has an active ester group or a carboxy group.

IPC Classes  ?

• C12M 1/34 - Measuring or testing with condition measuring or sensing means, e.g. colony counters
• C12M 1/00 - Apparatus for enzymology or microbiology
• C12N 15/09 - Recombinant DNA-technology
• C12Q 1/6806 - Preparing nucleic acids for analysis, e.g. for polymerase chain reaction [PCR] assay
• C12Q 1/6837 - Enzymatic or biochemical coupling of nucleic acids to a solid phase using probe arrays or probe chips
• C12Q 1/6876 - Nucleic acid products used in the analysis of nucleic acids, e.g. primers or probes

Abstract

The present invention provides a nitride semiconductor element which achieves both suppression of deterioration of a cladding layer and improvement of carrier injection efficiency. This nitride semiconductor element comprises: a nitride semiconductor substrate containing Al; and a semiconductor multilayer part that is disposed on the nitride semiconductor substrate. The semiconductor multilayer part comprises: a first conductivity type cladding layer that contains a nitride semiconductor of a first conductivity type; a light emitting layer that is disposed on the first conductivity type cladding layer and is formed of a nitride semiconductor comprising one or more quantum wells; and a second conductivity type cladding layer that is disposed on the light emitting layer and is formed of a nitride semiconductor of a second conductivity type containing Al. In a region of the second conductivity type cladding layer that is between 1 nm and 110 nm inclusive from the nitride semiconductor substrate side thereof, hydrogen is contained at a higher concentration than in the other regions of the second conductivity type cladding layer.

IPC Classes  ?

• H01S 5/042 - Electrical excitation
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
• H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser

Abstract

The purpose of the present invention is to both suppress deterioration of a clad layer and improve carrier injection efficiency in a nitride semiconductor element. A nitride semiconductor laminate serving as a nitride semiconductor element, obtained by: forming a first-conductivity-type clad layer containing a first-conductivity-type nitride semiconductor on a nitride semiconductor substrate that contains Al; forming a light-emitting layer, on the first-conductivity-type clad layer, from a nitride semiconductor including one or more quantum wells; forming a portion of a second-conductivity-type clad layer containing a second-conductivity-type nitride semiconductor under the conditions of the wafer temperature being 900-1000°C and the reactor pressure being 15-350 mbar; forming the remainder of the second-conductivity-type clad layer under the condition of the wafer temperature being 1030-1100°C and the reactor pressure being 15-350 mbar; and forming a semiconductor laminated part on the nitride semiconductor substrate.

IPC Classes  ?

• H01S 5/042 - Electrical excitation
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
• H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser

Abstract

Provided are a detecting device capable of properly converting carbide morphology in a steel material into data, a detection method capable of properly converting carbide morphology in a steel material into data, and a detecting program capable of properly converting carbide morphology in a steel material into data. A carbide morphology detecting device according to an embodiment of the present invention comprises: an identifying unit that identifies a cross-sectional region of crystal grains constituting a steel material from a microscope image of a steel material; an extracting unit that extracts image data of the cross-sectional region of the crystal grains from the microscope image on the basis of the identified cross-sectional region of the crystal grains; and a data converting unit for binarizing the extracted image data.

IPC Classes  ?

• G01N 33/204 - Structure thereof, e.g. crystal structure
• G06T 7/00 - Image analysis

Abstract

According to the present invention, information regarding the basis for determining artificial intelligence to be abnormal is acquired. An inspection device (1) is provided with: a target image acquisition unit (101) that acquires an inspection image of an inspection target (5); and an abnormality estimation unit (103) that inputs the inspection image acquired by the target image acquisition unit to a machine-trained model for generating text indicating an abnormality included in the inspection object from the image of the inspection target, and acquires text indicating the abnormality.

IPC Classes  ?

• G06T 7/00 - Image analysis
• G01N 21/88 - Investigating the presence of flaws, defects or contamination
• G06N 3/0475 - Generative networks
• G06N 20/00 - Machine learning

Abstract

This method for introducing a substance into generative cells comprises a step for combining a cell membrane-penetrating peptide containing an amphipathic amino acid sequence with the substance and introducing the resultant into pollen.

IPC Classes  ?

• C12N 15/87 - Introduction of foreign genetic material using processes not otherwise provided for, e.g. co-transformation
• A01H 1/00 - Processes for modifying genotypes
• C12N 5/10 - Cells modified by introduction of foreign genetic material, e.g. virus-transformed cells
• C12N 15/09 - Recombinant DNA-technology
• C12N 15/62 - DNA sequences coding for fusion proteins

Abstract

The present invention relates to a polynucleotide, containing a translated region from a start codon to a stop codon, a 5′ untranslated region, and a poly A chain, in which 65% or more of nucleotides contained in the poly A chain are sugar-modified nucleotides.

IPC Classes  ?

• A61K 31/7125 - Nucleic acids or oligonucleotides having modified internucleoside linkage, i.e. other than 3'-5' phosphodiesters
• C07H 21/02 - Compounds containing two or more mononucleotide units having separate phosphate or polyphosphate groups linked by saccharide radicals of nucleoside groups, e.g. nucleic acids with ribosyl as saccharide radical
• C07H 21/04 - Compounds containing two or more mononucleotide units having separate phosphate or polyphosphate groups linked by saccharide radicals of nucleoside groups, e.g. nucleic acids with deoxyribosyl as saccharide radical

Abstract

The present invention comprises: a first acquisition unit (11) that, on the basis of a cell image obtained by capturing a training cell, which is a cell that could potentially become a cell tissue body having a vascular network-like structure, acquires cell feature data that indicate the feature of the training cell; a second acquisition unit (12) that acquires tissue body feature data that indicate the feature of a training tissue body, which is a cell tissue body prepared by culturing said training cell; and a generation unit (14) that generates association data in which the cell feature data and the tissue body feature data are associated with each other.

IPC Classes  ?

• C12M 1/34 - Measuring or testing with condition measuring or sensing means, e.g. colony counters
• G06T 7/00 - Image analysis
• G06V 10/72 - Data preparation, e.g. statistical preprocessing of image or video features

Abstract

According to the present invention, the luminous efficiency of a nitride semiconductor element is improved. This nitride semiconductor element comprises: a nitride semiconductor substrate that contains Al; and a semiconductor multilayer part that is disposed on the nitride semiconductor substrate. The semiconductor multilayer part comprises: a cladding layer having a first conductivity type, the cladding layer containing a nitride semiconductor having the first conductivity type; a light emitting layer which is disposed on the cladding layer having the first conductivity type, and which is formed of a nitride semiconductor comprising one or more quantum wells; and a cladding layer having a second conductivity type, the cladding layer being disposed on the light emitting layer, and being formed of a nitride semiconductor containing Al and having the second conductivity type. The deviation α from the uniformity of the alloy in the surface direction of a waveguide layer having the second conductivity type is 130 meV to 350 meV (inclusive).

IPC Classes  ?

• H01S 5/042 - Electrical excitation
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
• H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser

Abstract

This analysis method includes: providing first material information acquired from a first spring steel to be analyzed to a trained model that has learned a relationship between material information including information obtained from the surface of a spring steel and information obtained from the interior of the spring steel and characteristic information representing a material property of the spring steel; and acquiring first characteristic information of the first spring steel from the trained model.

IPC Classes  ?

• G01N 3/00 - Investigating strength properties of solid materials by application of mechanical stress

Abstract

Provided are: a carbide particle detection device capable of properly identifying carbide particles in a steel material; a carbide particle detection method capable of properly identifying carbide particles in a steel material; and a carbide particle detection program capable of properly identifying carbide particles in a steel material. A carbide particle detection device according to one embodiment of the present invention comprises: an extraction unit that binarizes image data about a microscopic image of a steel material and extracts a carbide shape; and a separation unit that separates carbide particles from the binarized image data on the basis of a watershed or a carbide shape.

IPC Classes  ?

• G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
• G06T 7/11 - Region-based segmentation

Abstract

A component-embedded circuit board includes: a first conductive layer in which a high potential side power supply terminal is provided; a second conductive layer in which a low potential side power supply terminal is provided; an insulating layer formed between the first conductive layer and the second conductive layer; a first semiconductor element and a second semiconductor element that are embedded in the insulating layer and that each include a high potential side connection terminal and a low potential side connection terminal exposed from the insulating layer; and an intermediate conductor that connects the low potential side connection terminal of the first semiconductor element and the high potential side connection terminal of the second semiconductor element. The first semiconductor element and the second semiconductor element, which are arranged apart in an in-plane direction of the insulating layer, and the intermediate conductor are provided between the first conductive layer and the second conductive layer. The high potential side power supply terminal and the high potential side connection terminal of the first semiconductor element exposed from the insulating layer are connected by the first conductive layer. The low potential side power supply terminal and the low potential side connection terminal of the second semiconductor element exposed from the insulating layer are connected by the second conductive layer. At least one of the first conductive layer or the second conductive layer is configured to have a portion that overlaps the intermediate conductor when viewed from a laminating direction of the first conductive layer and the second conductive layer.

IPC Classes  ?

• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass

Abstract

[Problem] To provide a composite tissue in which elastin fibers and collagen fibers are intertwined, and a method for producing the composite tissue.　The problem can be solved by a composite tissue that includes elastin fibers, collagen fibers, and a crosslinking agent, wherein the elastin fibers and the collagen fibers are crosslinked by the crosslinking agent.

IPC Classes  ?

• A61L 27/24 - Collagen
• A61L 27/50 - Materials characterised by their function or physical properties
• D01F 4/00 - Monocomponent artificial filaments or the like of proteinsManufacture thereof
• D01F 8/12 - Conjugated, i.e. bi- or multicomponent, man-made filaments or the likeManufacture thereof from synthetic polymers with at least one polyamide as constituent

Abstract

The purpose of the present disclosure is to provide a technique that can contribute to less invasive or more reliable diagnosis of lymphocytic anterior hypophysitis and its related diseases. For this purpose, the KCNMA1 (calcium-activated potassium channel subunit alpha-1) protein or an epitope thereof is used as a diagnostic agent for lymphocytic anterior hypophysitis.

IPC Classes  ?

• G01N 33/564 - ImmunoassayBiospecific binding assayMaterials therefor for pre-existing immune complex or autoimmune disease

Abstract

A surface treatment device (1) comprises: a vacuum container (11); a treated object retaining unit (122) for retaining an object to be treated and a treated object movement mechanism (12) that are provided in the vacuum container (11), the treated object movement mechanism (12) causing the treated object retaining unit (122) to circle along a circling path; a plurality of surface treatment units (13, 14) that are provided to face the circling path to carry out surface treatment with respect to the surface of the object to be treated by using predetermined treatment gas; and an exhaust port (16) that is provided inside the circling path to discharge the treatment gas and/or reaction gas generated by reaction of the treatment gas to the outside of the vacuum container (11).

IPC Classes  ?

• C23C 14/54 - Controlling or regulating the coating process
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

A wavelength conversion apparatus includes: a first demultiplexer wavelength-separating an optical signal having wavelengths of a first band wavelength-multiplexed into n drop signals acquired by wavelength-multiplexing optical signals of predetermined wavelengths and a through signal acquired by wavelength-multiplexing an optical signal of a wavelength being not a target of wavelength conversion; a second demultiplexer demultiplexing optical signals of the predetermined wavelengths included in the n drop signals into optical signals; n wavelength converters wavelength-converting first optical signals of wavelengths included in the optical signals into second optical signals of the second band; n first multiplexers multiplexing the wavelength-converted second optical signals, and outputting n third optical signals; and a multiplexing unit multiplexing and outputting the n third optical signals, an optical signal acquired by wavelength-multiplexing wavelengths of a second band previously wavelength-separated from the wavelength-multiplexed optical signal, and the through signal.

IPC Classes  ?

• H04Q 11/00 - Selecting arrangements for multiplex systems
• H04J 14/02 - Wavelength-division multiplex systems

Abstract

Provided is a plant transformation technique that is more efficient and widely usable even for species in which seed gathering is difficult.　(c) This method for producing a plant introduced with a polynucleotide includes introducing the polynucleotide into a callus derived from a stem apical tissue of the plant to obtain a callus introduced with the polynucleotide.

IPC Classes  ?

• A01H 1/00 - Processes for modifying genotypes
• A01H 6/46 - Gramineae or Poaceae, e.g. ryegrass, rice, wheat or maize
• C12N 15/87 - Introduction of foreign genetic material using processes not otherwise provided for, e.g. co-transformation

Abstract

Provided is a production method for inexpensively obtaining an amide compound by subjecting a carboxylic acid compound and an amine compound to a dehydration condensation reaction under relatively mild conditions. The production method comprises a step for reacting a carboxylic acid compound and a primary or secondary amine compound in the presence of a boron catalyst and an α-hydroxycarboxylic acid compound so that the carboxylic acid compound and the primary or secondary amine compound undergo dehydration condensation, wherein the α-hydroxycarboxylic acid compound is a compound in which one hydroxy group is bonded to the α-position thereof and two substituted or unsubstituted halogenated alkyl groups or two substituted or unsubstituted aryl groups are bonded to the α-position thereof or a ring is spiro-bonded to the α-position thereof, and the carboxylic acid compound and the α-hydroxycarboxylic acid compound differ from each other.

IPC Classes  ?

• C07C 231/02 - Preparation of carboxylic acid amides from carboxylic acids or from esters, anhydrides, or halides thereof by reaction with ammonia or amines
• B01J 21/02 - Boron or aluminiumOxides or hydroxides thereof
• B01J 23/04 - Alkali metals
• B01J 31/02 - Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
• C07B 61/00 - Other general methods
• C07C 233/11 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having nitrogen atoms of carboxamide groups bound to hydrogen atoms or to carbon atoms of unsubstituted hydrocarbon radicals with carbon atoms of carboxamide groups bound to carbon atoms of an unsaturated carbon skeleton containing six-membered aromatic rings
• C07C 269/06 - Preparation of derivatives of carbamic acid, i.e. compounds containing any of the groups the nitrogen atom not being part of nitro or nitroso groups by reactions not involving the formation of carbamate groups
• C07C 271/22 - Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of hydrocarbon radicals substituted by carboxyl groups
• C07D 295/192 - Radicals derived from carboxylic acids from aromatic carboxylic acids

Abstract

This simulation method is a method for calculating a voltage response of a secondary battery using an equivalent circuit model, the simulation method including a step for acquiring a parameter of an electrical characteristic of the equivalent circuit model, a step for acquiring current information, voltage information and temperature information, a step for identifying an SOC from the voltage information, a step for calculating an OCV using the SOC and current information, a step for calculating a first voltage drop using the current information and the parameter, a step for calculating a second voltage drop using the current information, the temperature information and the parameter, a step for calculating a third voltage drop using the current information and the parameter, and a step for calculating the voltage response from the OCV, the first voltage drop, the second voltage drop and the third voltage drop, wherein the second voltage drop is calculated on the basis of the Butler-Volmer equation, and the third voltage drop is calculated on the basis of a time domain equation applied to a circuit model including a constant phase element CPE.

IPC Classes  ?

• G01R 31/367 - Software therefor, e.g. for battery testing using modelling or look-up tables
• G01R 31/382 - Arrangements for monitoring battery or accumulator variables, e.g. SoC
• G01R 31/385 - Arrangements for measuring battery or accumulator variables
• G01R 31/389 - Measuring internal impedance, internal conductance or related variables
• H01M 10/48 - Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte

Abstract

The present disclosure provides a technique that enables the simple preparation and/or purification of a desired polynucleotide linked product. Specifically, a desired polynucleotide linked product can be simply prepared and/or isolated by using a polynucleotide fragment containing a hydrophobic tag for the linking reaction.

IPC Classes  ?

• C07H 21/02 - Compounds containing two or more mononucleotide units having separate phosphate or polyphosphate groups linked by saccharide radicals of nucleoside groups, e.g. nucleic acids with ribosyl as saccharide radical
• A61K 48/00 - Medicinal preparations containing genetic material which is inserted into cells of the living body to treat genetic diseasesGene therapy
• C07H 1/00 - Processes for the preparation of sugar derivatives
• C12N 15/10 - Processes for the isolation, preparation or purification of DNA or RNA

Abstract

A mirror device (10) comprises: a first mirror (12) having a first reflective surface (22) on which a light ray (20) falls; and a second mirror (14) disposed away from the first reflective surface (22) in the normal direction to the first reflective surface (22). The second mirror (14) has a second reflective surface (24) on which the light ray (20) falls and a surface (26) opposite to the second reflective surface (24). The opposite surface (26) faces the first reflective surface (22), and the second reflective surface (24) is variable in shape.

IPC Classes  ?

• G21K 1/06 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction, or reflection, e.g. monochromators
• G02B 5/08 - Mirrors
• G02B 5/10 - Mirrors with curved faces
• G02B 17/06 - Catoptric systems, e.g. image erecting and reversing system using mirrors only
• G02B 21/00 - Microscopes
• G02B 23/00 - Telescopes, e.g. binocularsPeriscopesInstruments for viewing the inside of hollow bodiesViewfindersOptical aiming or sighting devices
• G21K 1/00 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating

Abstract

gg) of 25°C or less, and a polymer that is compatible with an epoxy resin.

IPC Classes  ?

• C09J 163/00 - Adhesives based on epoxy resinsAdhesives based on derivatives of epoxy resins
• C09J 153/00 - Adhesives based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsAdhesives based on derivatives of such polymers
• C09J 153/02 - Vinyl aromatic monomers and conjugated dienes

Abstract

It is an object of the present invention to provide a method for determining the medicinal effect or sensitivity of an anti-transferrin receptor antibody. According to the present invention, provided is a method for determining the medicinal effect or sensitivity of an anti-human transferrin receptor antibody having an action to inhibit the binding between human transferrin and a human transferrin receptor, wherein the method uses an intracellular iron content as an indicator.

IPC Classes  ?

• G01N 33/84 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving inorganic compounds or pH
• C07K 16/28 - Immunoglobulins, e.g. monoclonal or polyclonal antibodies against material from animals or humans against receptors, cell surface antigens or cell surface determinants
• G01N 33/574 - ImmunoassayBiospecific binding assayMaterials therefor for cancer

Abstract

An information processing device includes a speed selection instruction receiving unit, a display control unit, a location-pointing action accepting unit, and a characteristic measurement unit. The speed selection instruction receiving unit receives a speed selection instruction from the examinee. The display control unit executes a speed-variable display process to display a simulated moving image, which is a moving image simulating the field of vision of a moving human and including at least one target object in such a manner that the moving speed is set in accordance with the speed selection instruction. The location-pointing action accepting unit accepts a location-pointing action performed by the examinee to point to a specific location in the simulated moving image. The characteristic measurement unit measures the characteristics based on the indication results correlating with whether the location-pointing action correctly point to the location of the target object.

IPC Classes  ?

• G09B 9/05 - Simulators for teaching or training purposes for teaching control of vehicles or other craft for teaching control of land vehicles the view from a vehicle being simulated
• A61B 5/18 - Devices for psychotechnicsTesting reaction times for vehicle drivers
• G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer

Abstract

A ceramic heat storage body includes a shell that contains alumina as a main component and has an average absorbance larger than 0.3 at 1.7 μm to 2.7 μm, which is a center wavelength of radiant heat at 800° C. to 1400° C. In addition to alumina, the shell contains oxides containing Cr, Fe, Mn, and Co in an amount of 1 weight % or more in compound equivalent. Furthermore, the shell is a shell that has an outer surface in a shape of a spheroid including a sphere and internally has a hollow portion. Moreover, in the shell, during heat storage, a center temperature of a hollow portion is higher than an inner surface temperature of the shell.

IPC Classes  ?

• F28D 21/00 - Heat-exchange apparatus not covered by any of the groups
• C04B 35/117 - Composites

Abstract

Provided is a steam turbine member that suppresses the adhesion of scales over a long period of time without impairing the corrosion resistance or the like of a turbine.　A method for manufacturing a coated tubular member having an amorphous carbon deposition film m formed on the inner surface of a tubular member 1, the method comprising: a step for attaching lids 2, 3 to one end 12 and the other end 11 of the tubular member 1, the lids having openings 21, 31 through which gas can be introduced and discharged; a step for discharging the gas from inside the tubular member 1 through the opening 31 of the lid 3 at the one end 12 to reduce the pressure inside the tubular member 1; a step for applying a negative voltage to the tubular member 1, introducing a plasma-forming gas g into the tubular member 1 through the opening 21 of the lid 2 at the other end 11 to generate plasma inside the tubular member 1; and a step for introducing a raw material gas g for an amorphous carbon deposition film into the tubular member 1 through the opening 21 of the lid 2 at the other end 11.

IPC Classes  ?

• C23C 16/26 - Deposition of carbon only
• C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges