An electronic device is disclosed. The electronic device includes a die-attach pad, a semiconductor transistor having: a top surface positioned opposite of a bottom surface; a gate terminal and a source terminal disposed at the top surface; a drain terminal disposed at the bottom surface, a first lead separate from the die-attach pad and including a base, the base electrically and mechanically connected to the die-attach pad, a second lead separate from the die-attach pad and electrically isolated from the die-attach pad, the second lead electrically connected to the gate terminal, and a third lead separate from the die-attach pad and electrically isolated from the die-attach pad, the third lead electrically connected to the source terminal, and an electrically insulative encapsulant at least partially encapsulating the die-attach pad, the semiconductor transistor, the first lead, the second lead and the third lead.
H01L 23/367 - Cooling facilitated by shape of device
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
A circuit is disclosed. The circuit includes a first semiconductor switch connected to a second semiconductor switch at a switch node, an input voltage coupled to the first semiconductor switch, a ground coupled to the second semiconductor switch, a resonant circuit coupled to the first and second semiconductor switches, the resonant circuit having an inductor in series with a resonant capacitor coupled to the input voltage, and a sense resistor, where a voltage across the sense resistor is proportional to a current in the resonant circuit. In one aspect, the circuit further includes a sense capacitor coupled between the resonant capacitor and the sense resistor. In another aspect, inductor is coupled in parallel with a resonant capacitor.
A method of operating a PFC circuit. The method includes receiving an input voltage at an input terminal, controlling a current in an inductor via a first switch having a drain terminal, a source terminal and a gate terminal, where the inductor is coupled between the input terminal and the drain terminal and where during an on-time of the first switch the current in the inductor increases from substantially zero to a peak, during a first off-time of the first switch the current in the inductor decreases from the peak to substantially zero, and during a second off-time of the first switch the current in the inductor is substantially zero, generating a first reference voltage that is inversely proportional to a sum of the on-time and the first off-time of the first switch, and controlling the on-time of the first switch in response to the first reference voltage.
A substrate includes a first layer comprising aluminum gallium nitride (AlGaN) and a second layer disposed on the first layer. The second layer includes gallium nitride (GaN), hydrogen and a p-type dopant, the second layer having a top region disposed above a bottom region. Within the top region an average concentration of hydrogen is within one order of magnitude of the p-type dopant and within the bottom region an average concentration of hydrogen is less than an average concentration of the p-type dopant by at least one order of magnitude.
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
H10D 62/852 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
5.
CIRCUITS AND METHODS FOR GENERATING BIAS VOLTAGES IN SUBSTRATE CLAMP CIRCUITS
An electronic device includes a gallium nitride (GaN) substrate having a GaN-based top layer attached to a silicon-based bottom layer, a bidirectional switch formed on the GaN-based top layer and including a first source node, a second source node and a common drain node, a first bias generator circuit arranged to couple the first source node to the silicon-based bottom layer, and a second bias generator circuit arranged to couple the second source node to the silicon-based bottom layer. In one aspect, when a voltage of the first source node is at a higher voltage than the second source node, the first bias generator circuit brings a voltage at the silicon-based bottom layer close to the voltage at the second source node.
H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
An electronic component. The electronic component includes a base; a first semiconductor device attached to the base and having: a first Gallium nitride (GaN)-based switch having a first gate, a first source and a first drain, the first gate arranged to control a current flow between the first source and the first drain; a second GaN-based switch having a second source, a second gate and a second drain, the second gate coupled to the first gate, and the second drain coupled to the first drain. In one aspect, the electronic component also includes a second semiconductor device attached to the base and having: a logic circuit coupled to the second source and arranged to detect a magnitude of the current flow; and a driver circuit coupled to the first and second gates, the driver circuit arranged to control on and off states of the first and second GaN-based switches.
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 3/00 - Conversion of DC power input into DC power output
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
A power module includes a substrate that includes an electrically insulating layer. A first electrically conducting region, a second electrically conducting region, and a third electrically conducting region are each disposed on the electrically insulative layer. The electrically conducting regions are electrically isolated from each other. A plurality of high-side power switches is disposed on and electrically coupled to the first electrically conducting region. First connectors are coupled between the plurality of high-side power switches and the second electrically conductive region. A plurality of low-side power switches is disposed on and electrically coupled to the second electrically conductive region. An insulative encapsulant at least partially encapsulates power module components. The encapsulant defines a plurality of recesses disposed in a bottom surface of the power module. A plurality of electrically conductive pins extends from the bottom surface. Each conductive pin is aligned with a respective recess of the plurality of recesses.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
9.
LOW LOSS WINDING PLANAR TRANSFORMERS FOR MULTI- OUTPUT FLYBACK CONVERTERS
A transformer is disclosed. The transformer includes a magnetic core having a central region, a primary winding extending around the central region, a first secondary winding including a first conductor having one or more first turns extending around the central region, where the first conductor has a first width and is arranged to receive electromagnetic flux from the primary winding, and a second secondary winding including a second conductor having one or more second turns extending around the central region, where the second conductor has a second width and is arranged to receive electromagnetic flux from the primary winding. In one aspect, a number of the one or more second turns is greater than a number of the one or more first turns and the first width is greater than the second width.
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
H01F 41/04 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets for manufacturing coils
A power module includes a substrate that includes an electrically insulating layer. A first electrically conducting region, a second electrically conducting region, and a third electrically conducting region are each disposed on the electrically insulative layer. The electrically conducting regions are electrically isolated from each other. A plurality of high-side power switches is disposed on and electrically coupled to the first electrically conducting region. A plurality of first connectors is coupled between the plurality of high-side power switches and the second electrically conductive region. A plurality of low-side power switches is disposed on and electrically coupled to the second electrically conductive region. A plurality of second connectors is coupled between the plurality of low-side power switches and the third electrically conductive region. A power lead is coupled to the first electrically conductive region via a spacer.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
A circuit is disclosed. The circuit includes a transmitter having an input terminal arranged to receive input data and a transmission node arranged to transmit intermediate data corresponding to the input data, and a receiver having a receive node arranged to receive the intermediate data and an output terminal arranged to produce output data corresponding to the input data, the receiver further including a dV/dt detector circuit coupled to the receive node and arranged to stop the production of the output data at the output terminal when the dV/dt detector circuit detects a rate of change of voltage with respect to time greater than a predetermined threshold.
Systems and methods that automatically detect state of switches in power converters are disclosed. In one aspect, a power switch includes a first switch coupled between a power input node and a first terminal of a load, a second switch coupled between the power input node and a second terminal of the load, first and second current sense devices arranged to transmit first and second signals including at least one of a magnitude and polarity of first and second currents through the first and second switches, respectively, a first driver circuit arranged to transmit first control signals to the first switch based at least in part on a voltage at the power input node and the first signal, and a second driver circuit arranged to transmit second control signals to the second switch based at least in part on the voltage at the power input node and the second signal.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
An electronic device includes a body having a first side opposite and spaced apart from a second side, the body including third and fourth sides extending between the first and second sides and further including a top surface that extends between the first, second, third, and fourth sides, and wherein a central axis extends from the first side to the second side. Each of the third and fourth sides have a plurality of first extending portions and a plurality of second extending portions, each first extending portion extending a first distance from the central axis and each second extending portion extending a second distance from the central axis, wherein the first distance is greater than the second distance. The body defines first and second grooves that each extend between the first and second sides.
An electronic package includes a plurality of signal pins, a substrate electrically connected to each pin of the plurality of signal pins and a base comprising a plurality of apertures. Each respective pin of the plurality of signal pins extends through a respective aperture of the plurality of apertures. A seal is disposed in each respective aperture of the plurality of apertures and contacts a peripheral region of each respective signal pin of the plurality of signal pins.
H01L 23/10 - ContainersSeals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/367 - Cooling facilitated by shape of device
H01L 25/10 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers
A method of operating a circuit is disclosed. The method includes providing an input terminal and a ground terminal coupled to a power supply, providing an output terminal and the ground terminal coupled to a load, providing a low-side circuit comprising a low-side power switch coupled between a switch node and the ground terminal, providing a high-side circuit comprising a high-side power switch coupled between the switch node and the output terminal, providing an inductor coupled between the switch node and the input terminal, detecting, by a controller, a valley of a voltage at the switch node, transmitting a signal, by the low-side circuit, to the high-side circuit in response to the controller detecting the valley, and turning on, by the high-side circuit, the high-side power switch for a time interval sufficient to generate a negative current in the inductor in response to receiving the signal.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Turn-off circuits. In one aspect, the turn-off circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, a first pull-down circuit connected to the gate terminal, a second pull-down circuit connected to the gate terminal, and a third pull-down circuit connected to the gate terminal. In another aspect, the first, the second and the third pull-down circuits are arranged to cause a turn off of the transistor by changing a voltage at the gate terminal at a first rate of voltage with respect to time from an on-state voltage to a first intermediate voltage, and from the first intermediate voltage to a second intermediate voltage at a second rate of voltage with respect to time, and from the second intermediate voltage to an off-state voltage at a third rate of voltage with respect to time, wherein the first rate is higher than the second rate.
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 1/44 - Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H03K 17/06 - Modifications for ensuring a fully conducting state
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
20.
INTEGRATED POWER DEVICE WITH ENERGY HARVESTING GATE DRIVER
An electronic circuit is disclosed. The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, and a gate driver circuit including a pull-down transistor coupled to the gate terminal, and an input terminal arranged to receive an input signal and generate a corresponding output signal at an output terminal coupled to the gate terminal, where the gate driver circuit is arranged to store energy harvested from the input signal and use the stored energy to change a conductive state of the pull-down transistor. In one aspect, the transistor includes gallium nitride (GaN). In another aspect, the pull-down transistor includes GaN.
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
G05F 1/573 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overcurrent detector
H02H 9/02 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
The invention relates to a digital isolator comprising a logic module (20) for receiving an input signal D, and providing command signals (41, 42) to sawtooth modulators. A first sawtooth modulator provides a first sawtooth signal at a node A1 comprising a fast rising edge triggered by a rising edge of a control signal, followed by a slow falling edge, when D equals 1 and comprises a fast falling edge triggered by a rising edge of a control signal, followed by a slow rising edge, when D equals 0. A second sawtooth modulator provides a second sawtooth signal at node A2, inverted with respect to first sawtooth signal. Isolation capacitors (61, 62) are connected to nodes A1 and A2 and are used as isolation barrier and as part of a high-pass filter together with dipoles Z1 and Z2. Threshold comparators (121, 122) provide the output signals S and R. Based on these S and R output signals, the input signal D referred to ground G1 can be regenerated versus a ground G2 using for example SR logic gate, low pass filters or peak detectors.
H02H 9/02 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
H03K 5/24 - Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
H03K 19/003 - Modifications for increasing the reliability
H03K 19/094 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors
22.
Circuits and methods for controlling a voltage of a semiconductor substrate
An electronic device includes a semiconductor substrate and a bidirectional transistor switch formed on the substrate, the bidirectional switch including a first source node, a second source node and a common drain node. A first transistor is formed on the substrate and includes a first source terminal, a first drain terminal and a first gate terminal, wherein the first source terminal is connected to the substrate, the first drain terminal is connected to the first source node and the first gate terminal is connected to the second source node. A second transistor is formed on the substrate and includes a second source terminal, a second drain terminal and a second gate terminal, wherein the second source terminal is connected to the substrate, the second drain terminal is connected to the second source node and the second gate terminal is connected to the first source node.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
23.
CIRCUITS AND METHODS FOR GATE OVERDRIVE IN GAN POWER STAGES
A circuit is disclosed. The circuit includes a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal, a driver circuit having an output terminal coupled to the gate terminal, where the driver circuit is arranged to generate an output voltage at the output terminal such that: the output voltage is at a first voltage when a voltage at the drain terminal is below a predetermined voltage; the output voltage is at a second voltage when 1) the voltage at the drain terminal is above the predetermined voltage and 2) a time period during which the output voltage is at the second voltage is less than a predetermined time. In one aspect, the second voltage is greater than the first voltage.
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H03K 17/081 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
A power module is designed with balanced current flow for each power switch in parallel so that every power switch has a similar current path length. The power module can include a first plurality of power switches electrically coupled to a first region and a second plurality of power switches electrically coupled to a second region. A first plurality of conductive clips are configured to conduct a first plurality of currents and a second plurality of conductive clips are configured to conduct a second plurality of currents. The power module can include a first lead frame configured to apply positive voltage to the first region, a second lead frame configured to conduct current from the second region and a third lead frame configured to conduct current from the third region.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H02M 3/00 - Conversion of DC power input into DC power output
25.
INTEGRATED BIDIRECTIONAL FOUR QUADRANT SWITCHES WITH DRIVERS AND INPUT/OUTPUT CIRCUITS
An electronic system is disclosed. The electronic system includes an electronic package having a base with a plurality of external terminals, and further having an electrically insulative material at least partially encapsulating the base, a controller circuit disposed within the electronic package and referenced to a first ground, a first and second driver circuits disposed within the electronic package and referenced to a second ground and arranged to receive isolated control signals from the controller circuit, and a bidirectional switch disposed within the electronic package and referenced to the second ground and arranged to receive drive signals from the first and second driver circuits. In one aspect, the first and second driver circuits are isolated from the controller circuit via capacitors, or magnetics, or optocouplers, or magneto resistors.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
26.
INTEGRATED BIDIRECTIONAL FOUR QUADRANT SWITCHES WITH DRIVERS AND INPUT/OUTPUT CIRCUITS
An electronic system is disclosed. The electronic system includes an electronic package having a base with a plurality of external terminals, and further having an electrically insulative material at least partially encapsulating the base, a controller circuit disposed within the electronic package and referenced to a first ground, a first and second driver circuits disposed within the electronic package and referenced to a second ground and arranged to receive isolated control signals from the controller circuit, and a bidirectional switch disposed within the electronic package and referenced to the second ground and arranged to receive drive signals from the first and second driver circuits. In one aspect, the first and second driver circuits are isolated from the controller circuit via capacitors, or magnetics, or optocouplers, or magneto resistors.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
H01H 9/56 - Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere for ensuring operation of the switch at a predetermined point in the AC cycle
H01L 23/528 - Layout of the interconnection structure
27.
Driver circuits for gallium nitride half bridge power converters
A driver circuit is disclosed. The driver circuit is configured to generate a drive voltage for driving a bootstrap transistor. The driver circuit includes an input node and an output node, a first circuit including a plurality of switches, a first capacitor and a second capacitor, and a pass gate switch coupled between the output node and the first capacitor. In one aspect, the first circuit, the first and second capacitors and the pass gate switch are arranged to cause an output voltage at the output node to change from a first output voltage to a second output voltage. In another aspect, a resistor is connected between the first capacitor and the second capacitor, and a feedback switch is connected in parallel to the resistor. The feedback switch is turned on in response to a feedback signal, thereby reducing an impedance value of the resistor.
H03K 17/06 - Modifications for ensuring a fully conducting state
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
A circuit. The circuit includes a switch having a gate terminal, a source terminal and a drain terminal, a switch driver circuit connected to the gate terminal and arranged to control an on-state and an off-state of the switch, the switch drive circuit including: a signal conversion circuit arranged to receive a control signal and in response generate a high-side signal; a signal buffer circuit coupled to the signal conversion circuit and arranged to receive the high-side signal and in response generate a buffered signal; and a drive circuit coupled to the signal buffer circuit and arranged to receive the buffered signal and in response generate a gate drive signal that causes the switch to transition between the on-state and the off-state. In one aspect, the switch is an NMOS transistor having a gate, a source and a drain, where the source and drain are at substantially high voltage.
H03K 17/60 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being bipolar transistors
G05F 1/56 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
A synchronous rectifier module includes a transformer sandwiched between a first circuit board and a second circuit board. A first plurality of switches are disposed on a first side of the first circuit board and form a first synchronous rectifier circuit, and a second plurality of switches are disposed on a second side of the first circuit board and form a second synchronous rectifier circuit. A third plurality of switches are disposed on a first side of the second circuit board and form a third synchronous rectifier circuit, and a fourth plurality of switches are disposed on a second side of the second circuit board and form a fourth synchronous rectifier circuit. The first, second, third and fourth synchronous rectifier circuits are each connected to secondary windings of the transformer.
A circuit is disclosed. The circuit includes a transmitter having an input terminal arranged to receive input data and a transmission node arranged to transmit intermediate data corresponding to the input data, and a receiver having a receive node arranged to receive the intermediate data and an output terminal arranged to produce output data corresponding to the input data, the receiver further including a dV/dt detector circuit coupled to the receive node and arranged to stop the production of the output data at the output terminal when the dV/dt detector circuit detects a rate of change of voltage with respect to time greater than a predetermined threshold.
Circuits and methods that control a rate of change of a drain voltage as a function of time in a transistor are disclosed. In one aspect, the circuit includes a transistor having a gate terminal that controls operation of the transistor, and a control circuit coupled to the gate terminal and arranged to change a voltage at the gate terminal at a first rate of voltage with respect to time from a first voltage to a first intermediate voltage, and further arranged to change the voltage at the gate terminal at a second rate of voltage with respect to time from the first intermediate voltage to a second intermediate voltage, where the first rate is different than the second rate.
A circuit is disclosed. The circuit includes a transmitter having an input terminal arranged to receive input data and a transmission node arranged to transmit intermediate data corresponding to the input data, and a receiver having a receive node arranged to receive the intermediate data and an output terminal arranged to produce output data corresponding to the input data, the receiver further including a dV/dt detector circuit coupled to the receive node and arranged to stop the production of the output data at the output terminal when the dV/dt detector circuit detects a rate of change of voltage with respect to time greater than a predetermined threshold.
Aspects of this disclosure relate to a discrete time analog multiplier and a discrete time analog divider. The multiplier and divider circuits are mainly using linear components such as capacitors, current sources, comparators and transconductance amplifiers, etc. The dynamic range is only limited by the available range of supply to the circuit rather than dependent on the transistor's linearity. Such limitation could be overcome by proper scaling or autoscaling of the signals. Hence, the limited dynamic range can be easily improved. With the help of using basic electronic components and operating in the analog domain, the conversion from analog to digital and/or digital to analog is not required.
H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
34.
SYSTEMS AND METHODS FOR HYBRID PHASE-SHIFT OPERATION OF INTERLEAVED PFC CONVERTERS
A method of operating a circuit is disclosed. The method includes providing an interleaved power factor correction (PFC) converter circuit; determining a switching frequency of the interleaved PFC converter circuit; setting a phase shift of the interleaved PFC converter circuit at a first phase shift when the switching frequency of the interleaved PFC converter circuit is below or at a first switching frequency; setting the phase shift of the interleaved PFC converter circuit at a second phase shift when the switching frequency of the interleaved PFC converter circuit is greater than the first switching frequency but less than a second switching frequency; and setting the phase shift of the interleaved PFC converter circuit at the first phase shift when the switching frequency of interleaved the PFC converter circuit is greater than the second switching frequency.
A power converter comprises a chassis and an AC connector, a low-voltage DC connector and a high-voltage DC connector at an exterior surface of the chassis. An AC-DC converter circuit is positioned at least partially within the chassis and is coupled to the AC connector. A first converter circuit is positioned at least partially within the chassis and is coupled to the AC-DC converter circuit and to a high-voltage DC bus. The high-voltage DC bus is connected to the high-voltage DC connector. A second converter circuit is positioned at least partially within the chassis and is coupled to the high-voltage DC bus to a low-voltage DC bus. The low-voltage DC bus is connected to the low-voltage DC connector.
Systems and methods that automatically detect state of switches in power converters are disclosed. In one aspect, a power switch includes a first switch coupled between a power input node and a first terminal of a load, a second switch coupled between the power input node and a second terminal of the load, first and second current sense devices arranged to transmit first and second signals including at least one of a magnitude and polarity of first and second currents through the first and second switches, respectively, a first driver circuit arranged to transmit first control signals to the first switch based at least in part on a voltage at the power input node and the first signal, and a second driver circuit arranged to transmit second control signals to the second switch based at least in part on the voltage at the power input node and the second signal.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
A synchronous rectifier circuit is self-powered by a portion of a secondary winding. A transformer has a primary winding arranged to receive power from a power source, a secondary winding arranged to transfer power to a load, and a tapped output arranged to transfer power to a controller circuit, wherein the tapped output is formed from a portion of the secondary windings. The controller circuit uses power from the tapped output to drive a synchronous switch disposed between the secondary winding and the load. The synchronous switch rectifies the power received from the secondary winding such that DC power can be supplied to a load.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
38.
POWER CONVERTERS HAVING SYNCHRONOUS RECTIFIER CIRCUITS POWERED BY AUXILIARY WINDINGS
A circuit. The circuit includes a transformer having a primary winding extending between a first terminal and a second terminal, and a secondary winding extending between a third terminal and a first output terminal, and an auxiliary winding extending between a fourth terminal and the third terminal; a first switch having a first gate terminal, a first source terminal and a first drain terminal, the first drain terminal coupled to the second terminal and the first source terminal coupled to a power source; a second switch having a second gate terminal, a second source terminal and a second drain terminal, the second source terminal coupled to the third terminal and the second drain terminal coupled to a second output terminal, the secondary winding having a winding direction opposite to that of the primary winding and the auxiliary winding having a winding direction same as that of the primary winding.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
39.
HALF-BRIDGE CIRCUIT USING MONOLITHIC FLIP-CHIP GAN POWER DEVICES
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
H01L 23/528 - Layout of the interconnection structure
H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
Methods of operating a circuit are disclosed. In one aspect, disclosed methods includes providing a power converter circuit having transformer with a primary winding and secondary winding, a first switch and second switch coupled to the primary winding, a third switch coupled to the secondary winding, a controller coupled to the first and second switches. Disclosed methods further includes sensing a turn-on of the third switch and in response, transmitting a turn-on signal to the controller; and turning-on the second switch, using the controller, in response to receiving the turn-on signal. In another aspect, disclosed methods further includes sensing a turn-off of the third switch and in response, transmitting a turn-off signal to the controller using an isolation module, and turning-off the second switch, using the controller, in response to receiving the turn-off signal. In yet another aspect, the second switch is turned-off, using the controller, after a delay time.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
A circuit is disclosed. The circuit includes a transformer having a primary winding extending between a first terminal and a second terminal, and further including a secondary winding extending between a third terminal and a first output terminal; a first switch having a first gate terminal, a first source terminal and a first drain terminal, the first drain terminal coupled to the second terminal and the first source terminal coupled to a power source; a second switch having a second gate terminal, a second source terminal and a second drain terminal, the second source terminal coupled to the second terminal, and the second drain terminal coupled to the power source; and a third switch having a third gate terminal, a third source terminal and a third drain terminal, the third source terminal coupled to the third terminal and the third drain terminal coupled to a second output terminal.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
42.
Power factor correction circuit for a boost converter
on substantially in accordance with the following relationship:
The first parameter includes at least one first process-dependent parameter and the second parameter includes at least one second process-dependent parameter. The first process-dependent parameter and the second process-dependent parameter are same electrical characteristic associated with different circuit components in the power factor correction circuit.
A semiconductor package for a multi-phase motor driving circuit comprises a driving unit, a switching unit, a first bonding wire, and a second bonding wire. The driving unit comprises a first driving IC, a second driving IC and a third driving IC, configured to couple with a controller. The switching unit comprises a first pair of power switches, a second pair of power switches and a third pair of power switches, configured to couple with the first driving IC, the second driving IC and the third driving IC, respectively. The first bonding wire is coupled between a sensing pin of the first driving circuit and a connection between the driving unit and a motor driven by the driving. The second bonding wire is coupled between a fault out pin of the first driving IC, the second driving IC and the third driving IC.
H02H 7/08 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors
H02H 7/09 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors against over-voltageEmergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors against reduction of voltageEmergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors against phase interruption
H02K 11/33 - Drive circuits, e.g. power electronics
44.
SWITCHING POWER CONVERTER MODULE WITH A HEAT DISSIPATION STRUCTURE
An electronic device is disclosed. In one aspect, the electronic device includes a printed circuit board (PCB) having a first surface and a second surface opposite the first surface, where the PCB includes a thermally conductive region having a plurality of vias that extend from the first surface to the second surface; a semiconductor device attached to the second surface of the PCB and overlying the thermally conductive region; a transformer having a magnetic core; a shield arranged to partially enclose the transformer and define an opening; and an insert disposed within the opening, attached to the first surface of the PCB and overlying the thermally conductive region.
Systems and methods for improving radiated electromagnetic interference (EMI) in switching power supplies are disclosed. In one aspect, a converter circuit includes a transformer having a primary winding and a secondary winding, the primary winding extending from a first primary terminal to a second primary terminal, a first switch having a first gate terminal, a first source terminal and a first drain terminal, wherein the first drain terminal is coupled to the first primary terminal, and the first source terminal is coupled to a power source, and a capacitor having a first capacitor terminal and second capacitor terminal, wherein the first capacitor terminal is coupled to the power source. A ferrite bead is coupled between the first primary terminal and the first drain terminal, and a capacitor network is coupled in parallel with the ferrite bead and arranged to reduce radiated electromagnetic interference of the converter circuit.
H02M 1/44 - Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
H02M 1/12 - Arrangements for reducing harmonics from AC input or output
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
Gallium nitride reference voltage generation circuits. In one aspect, the circuit includes a first gallium nitride (GaN)-based transistor having a first gate terminal, a first source terminal and a first drain terminal, a second GaN-based transistor having a second gate terminal, a second source terminal and a second drain terminal, the second gate terminal coupled to the first drain terminal, an input terminal coupled to the first gate terminal and arranged to receive a first voltage, an output terminal coupled to the second source terminal, a power supply terminal coupled to the first drain terminal and the second drain terminal, and a feedback circuit coupled between the first source terminal and the second source terminal, where the first source terminal is coupled to a ground through a first impedance element, the first impedance element having a positive temperature coefficient.
G05F 1/46 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC
G05F 1/575 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
G05F 1/59 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load
47.
LOSSLESS SYNCHRONOUS RECTIFICATION POWER SUPPLY CIRCUIT AND DESIGN METHOD
A low power-loss supply circuit minimizes the losses in a synchronous rectifier power conversion circuit by regulating the voltage supply (Vcc) of a synchronous rectifier controller. The low power-loss supply circuit uses two regulating capacitors to regulate the value of the voltage supplied to the controller. A first regulating capacitor supplies the input voltage which powers the synchronous rectifier controller. A second regulating capacitor is used to cyclically charge the first regulating capacitor.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
G05F 1/573 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overcurrent detector
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
H02H 9/02 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H02M 1/36 - Means for starting or stopping converters
H02M 3/00 - Conversion of DC power input into DC power output
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 7/219 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
H10D 62/83 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
50.
System and methods for motor drive using GAN synchronous rectification
Systems and methods for a GaN-based motor drive circuit using synchronous rectification is disclosed. In one aspect, a method of operating a motor drive circuit includes providing a half-bridge circuit including a high-side GaN switch and a low-side GaN switch coupled in series at an output node, providing a motor coupled to the output node, turning on the high-side GaN switch such that a first current flows through the motor, turning off the high-side GaN switch, turning on the low-side GaN switch when a voltage at the output node drops below a predetermined threshold voltage, sensing, using a sense device coupled to the low-side GaN switch, a magnitude of a second current that flows through the low-side GaN switch, and turning off the low-side GaN switch when the magnitude of the second current drops below a predetermined threshold current.
A power converter comprises a chassis and an AC connector, a low-voltage DC connector and a high-voltage DC connector at an exterior surface of the chassis. An AC-DC converter circuit is positioned at least partially within the chassis and is coupled to the AC connector. A first converter circuit is positioned at least partially within the chassis and is coupled to the AC-DC converter circuit and to a high-voltage DC bus. The high-voltage DC bus is connected to the high-voltage DC connector. A second converter circuit is positioned at least partially within the chassis and is coupled to the high-voltage DC bus to a low-voltage DC bus. The low-voltage DC bus is connected to the low-voltage DC connector.
H02J 7/06 - Regulation of the charging current or voltage using discharge tubes or semiconductor devices
B60L 53/20 - Methods of charging batteries, specially adapted for electric vehiclesCharging stations or on-board charging equipment thereforExchange of energy storage elements in electric vehicles characterised by converters located in the vehicle
B60L 53/22 - Constructional details or arrangements of charging converters specially adapted for charging electric vehicles
H01F 27/22 - Cooling by heat conduction through solid or powdered fillings
H01F 27/26 - Fastening parts of the core togetherFastening or mounting the core on casing or support
H01F 27/30 - Fastening or clamping coils, windings, or parts thereof togetherFastening or mounting coils or windings on core, casing, or other support
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
H02M 1/44 - Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
H02M 3/22 - Conversion of DC power input into DC power output with intermediate conversion into AC
H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
H02M 7/66 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output with possibility of reversal
An electronic transformer includes a magnetic core and first and second primary windings formed around the magnetic core. First and second secondary windings are also formed around the magnetic core and are shielded from the first and second primary windings by first and second shield windings. An auxiliary winding provides auxiliary power and is positioned on a same layer as the first shield winding. A compensation winding compensates for current imbalance in the transformer caused by the auxiliary winding and is positioned on a same layer as at least one of the first and the second shield windings.
Systems and methods that automatically detect state of switches in power converters are disclosed. In one aspect, a power switch includes a first switch coupled between a power input node and a first terminal of a load, a second switch coupled between the power input node and a second terminal of the load, first and second current sense devices arranged to transmit first and second signals including at least one of a magnitude and polarity of first and second currents through the first and second switches, respectively, a first driver circuit arranged to transmit first control signals to the first switch based at least in part on a voltage at the power input node and the first signal, and a second driver circuit arranged to transmit second control signals to the second switch based at least in part on the voltage at the power input node and the second signal.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Monolithic high side GaN-based circuits using capacitors for level shifting. In one aspect, a power converter includes a GaN-based die, a switch formed on the GaN-based die and having a gate terminal, where the switch is arranged to be selectively conductive according to a driver signal applied to the gate terminal, a buffer circuit formed on the GaN-based die and arranged to receive an input signal and generate a corresponding differential output signal at a first output terminal and at a second output terminal, and a voltage level converter formed on the GaN-based die and having a first input terminal coupled to the first output terminal via a first capacitor and having a second input terminal coupled to the second output terminal via a second capacitor, where the first and second capacitors are formed on the GaN-based die, and the voltage level converter is arranged to generate the driver signal.
H10D 84/80 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs
55.
Half-bridge circuit using separately packaged GaN power devices
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 23/528 - Layout of the interconnection structure
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
56.
Circuits and methods for controlling a voltage of a semiconductor substrate
An electronic device includes a semiconductor substrate and a bidirectional transistor switch formed on the substrate, the bidirectional switch including a first source node, a second source node and a common drain node. A first transistor is formed on the substrate and includes a first source terminal, a first drain terminal and a first gate terminal, wherein the first source terminal is connected to the substrate, the first drain terminal is connected to the first source node and the first gate terminal is connected to the second source node. A second transistor is formed on the substrate and includes a second source terminal, a second drain terminal and a second gate terminal, wherein the second source terminal is connected to the substrate, the second drain terminal is connected to the second source node and the second gate terminal is connected to the first source node.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
An integrated voltage regulator comprises a plurality of semiconductor devices and a circuit board including a plurality of thermally conductive inlays. At least one of the plurality of electronic devices is thermally coupled to at least one of the plurality of thermally conductive inlays. A substrate is thermally coupled to the circuit board and to the plurality of thermally conductive inlays.
A flyback DC-DC converter. The converter having a transformer with a primary and a secondary windings, first and second switches, a capacitor coupled between the second switch and the primary winding, where the second switch is arranged to operate such that a sum of a first and second time periods equals a sum of third and fourth time periods, where the first time period is a delay time period from a time that the first switch is turned off to a time that the second switch is turned on, the second time period is a time period that the second switch is on, the third time period is a resonance time period of a resonator formed by a leakage inductance of the transformer and a capacitance of the capacitor, and the fourth time period is a time period for discharge of the leakage inductance of the transformer into the capacitor.
H02M 1/44 - Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
A transformer comprises a first magnetic core that defines a first channel and a second magnetic core that defines a second channel, wherein the first magnetic core is coupled to the second magnetic core. First and second posts are positioned within the first channel and within the second channel, wherein each of the first and second posts extend from the first magnetic core to the second magnetic core. A primary winding and a secondary winding of a transformer are formed around the first post. An inductor winding is formed around the second post. The inductor winding is electrically coupled to the primary winding providing the transformer with increased inductance. A thermal potting compound is disposed between the first and the second cores and used to conduct heat to a heatsink.
Systems and methods for reducing auxiliary transformer winding turns are disclosed. In one aspect, a circuit includes a transformer having a primary winding, a secondary winding and an auxiliary winding having a first end and a second end, a diode having a cathode and an anode, the anode coupled to the first end of the auxiliary winding, and a capacitor having a first terminal coupled to the second end of the auxiliary winding, and a second terminal coupled to the cathode.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
A digital isolator. The digital isolator a logic module for receiving an input signal D, and providing command signals to first and second sawtooth modulators. The first sawtooth modulator can provide a first sawtooth signal at a node A1 having a fast rising edge triggered by a rising edge of a control signal, followed by a slow falling edge, when D equals 1 and having a fast falling edge triggered by a rising edge of a control signal, followed by a slow rising edge, when D equals 0. A second sawtooth modulator provides a second sawtooth signal at node A2, inverted with respect to first sawtooth signal. Isolation capacitors connected to nodes A1 and A2 can be used as isolation barrier and as part of high-pass filters together with dipoles Z1 and Z2.
H02H 9/02 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
H03K 5/24 - Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
H03K 19/003 - Modifications for increasing the reliability
H03K 19/094 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors
62.
Pulsed level shift and inverter circuits for GaN devices
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 23/528 - Layout of the interconnection structure
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
63.
PLANAR TRANSFORMERS WITH MULTIPLE MAGNETIC MATERIALS
Systems and methods for improving winding losses in transformers are disclosed. In one aspect, a transformer includes a first magnetic core having an interior portion and an exterior portion, a second magnetic core in contact with the interior and exterior portions, a plurality of primary and secondary windings formed around the interior portion, where the interior portion is formed from one of a first magnetic material and a second magnetic material, and the exterior portion is formed from one of the first magnetic material and the second magnetic material, where the first magnetic material has different properties than the second magnetic material. In another aspect, the first magnetic core includes a third portion that extends across and is in contact with the interior portion and the exterior portion, where the third portion is formed from one of the first magnetic material and the second magnetic material.
Structures and related techniques for singulating GaN-on-Si wafers are disclosed. In one aspect, a semiconductor wafer includes a silicon layer, and a gallium nitride (GaN) layer disposed on the silicon layer and defining a plurality of trenches that each extend to the silicon layer. In another aspect, the GaN layer includes one or more gallium nitride layers of different compositions. In yet another aspect, the wafer includes a plurality of dielectric layers disposed on the GaN layer. In yet another aspect, each of the plurality of trenches has a depth that is equal to a sum of a thickness of the GaN layer and a thickness of the plurality of the dielectric layers.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
A system is disclosed. The system includes a substrate, and a first chip on the substrate, where a load circuit is integrated on the first chip. The system also includes a second chip on the substrate, where a power delivery circuit is configured to deliver current to the load circuit according to a regulated voltage at a node. The power delivery circuit includes a first circuit configured to generate an error signal based at least in part on the regulated voltage, and a voltage generator including power switches configured to modify the regulated voltage according to the error signal, where the first circuit of the power delivery circuit is integrated on the first chip, and where at least a portion of the power switches of the power delivery circuit are integrated on the second chip.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/00 - Conversion of DC power input into DC power output
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
67.
Integrated gallium nitride power device with protection circuits
A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
H02H 9/02 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
68.
SYSTEMS AND METHODS FOR IMPROVING WINDING LOSSES IN PLANAR TRANSFORMERS
Systems and methods for improving winding losses in transformers. In one aspect, a transformer includes a first magnetic core having a first portion in contact with a second magnetic core and a second portion separated from the second magnetic core by a distance d, a plurality of primary windings formed around the second portion, a first secondary winding forming a first layer having a first inner diameter, a second secondary winding forming an nth layer having a second inner diameter. The plurality of primary windings are positioned between the first layer and the nth layer, where the plurality of primary windings, and the first secondary winding and the second secondary winding are formed around the second portion, and a difference between the first inner diameter and the second inner diameter defines a distance y, and a ratio of distance y to distance d is between 0.01 to 10.
H01F 27/34 - Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
An electronic device includes a semiconductor substrate and a bidirectional transistor switch formed on the substrate, the bidirectional switch including a first source node, a second source node and a common drain node. A first transistor is formed on the substrate and includes a first source terminal, a first drain terminal and a first gate terminal, wherein the first source terminal is connected to the substrate, the first drain terminal is connected to the first source node and the first gate terminal is connected to the second source node. A second transistor is formed on the substrate and includes a second source terminal, a second drain terminal and a second gate terminal, wherein the second source terminal is connected to the substrate, the second drain terminal is connected to the second source node and the second gate terminal is connected to the first source node.
H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
B01J 23/00 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group
Circuits and methods that control a rate of change of a drain voltage as a function of time in a transistor are disclosed. In one aspect, the circuit includes a transistor having a gate terminal that controls operation of the transistor, and a control circuit coupled to the gate terminal and arranged to change a voltage at the gate terminal at a first rate of voltage with respect to time from a first voltage to a first intermediate voltage, and further arranged to change the voltage at the gate terminal at a second rate of voltage with respect to time from the first intermediate voltage to a second intermediate voltage, where the first rate is different than the second rate.
Turn-off circuits. In one aspect, the turn-off circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, a first pull-down circuit connected to the gate terminal, a second pull-down circuit connected to the gate terminal, and a third pull-down circuit connected to the gate terminal. In another aspect, the first, the second and the third pull-down circuits are arranged to cause a turn off of the transistor by changing a voltage at the gate terminal at a first rate of voltage with respect to time from an on-state voltage to a first intermediate voltage, and from the first intermediate voltage to a second intermediate voltage at a second rate of voltage with respect to time, and from the second intermediate voltage to an off-state voltage at a third rate of voltage with respect to time, wherein the first rate is higher than the second rate.
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 1/44 - Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H03K 17/06 - Modifications for ensuring a fully conducting state
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
72.
Integrated power device with energy harvesting gate driver
An electronic circuit is disclosed. The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, and a gate driver circuit including a pull-down transistor coupled to the gate terminal, and an input terminal arranged to receive an input signal and generate a corresponding output signal at an output terminal coupled to the gate terminal, where the gate driver circuit is arranged to store energy harvested from the input signal and use the stored energy to change a conductive state of the pull-down transistor. In one aspect, the transistor includes gallium nitride (GaN). In another aspect, the pull-down transistor includes GaN.
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
G05F 1/573 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overcurrent detector
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
H02H 9/02 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
73.
Circuits and methods for controlling a voltage of a semiconductor substrate
An electronic device includes a semiconductor substrate and a bidirectional transistor switch formed on the substrate, the bidirectional switch including a first source node, a second source node and a common drain node. A first transistor is formed on the substrate and includes a first source terminal, a first drain terminal and a first gate terminal, wherein the first source terminal is connected to the substrate, the first drain terminal is connected to the first source node and the first gate terminal is connected to the second source node. A second transistor is formed on the substrate and includes a second source terminal, a second drain terminal and a second gate terminal, wherein the second source terminal is connected to the substrate, the second drain terminal is connected to the second source node and the second gate terminal is connected to the first source node.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
74.
Two-dimensional electron gas charge density control
Structures and related techniques for control of two-dimensional electron gas (2DEG) charge density in gallium nitride (GaN) devices are disclosed. In one aspect, a GaN device includes a compound semiconductor substrate, a source region formed in the compound semiconductor substrate, a drain region formed in the compound semiconductor substrate and separated from the source region, a 2DEG layer formed in the compound semiconductor substrate and extending between the source region and the drain region, a gate region formed on the compound semiconductor substrate and positioned between the source region and the drain region, and a plurality of isolated charge control structures disposed between the gate region and the drain region.
H10D 30/47 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
75.
Half-bridge circuit using flip-chip GaN power devices
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 23/528 - Layout of the interconnection structure
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
76.
Half-bridge circuit using separately packaged GaN power devices
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 23/528 - Layout of the interconnection structure
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 23/528 - Layout of the interconnection structure
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
78.
Half-bridge circuit using monolithic flip-chip GaN power devices
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H03K 3/00 - Circuits for generating electric pulsesMonostable, bistable or multistable circuits
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 23/528 - Layout of the interconnection structure
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
79.
FIELD PLATE STRUCTURES FOR GAN HIGH VOLTAGE TRANSISTORS
Field plate structures for gallium nitride (GaN) high voltage transistors are disclosed. In one aspect, a transistor includes a GaN substrate, a source region formed on the GaN substrate, a drain region formed on the GaN substrate and separate from the source region, a gate region formed between the source region and the drain region, a pedestal formed on the GaN substrate and positioned between the gate region and the drain region, and a field plate electrically coupled to the source region, where the field plate extends from a proximal region positioned between the source region and the pedestal, towards the drain region, where at least a portion of the field plate overlaps at least a portion of the pedestal.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
An electronic device includes a substrate and a first gallium nitride (GaN) transistor formed on a first semiconductor die that is electrically coupled to the substrate. A second GaN transistor is formed on a second semiconductor die and is also electrically coupled to the substrate. An integral heat spreader is thermally coupled to the first and the second gallium nitride semiconductor dies and is electrically coupled to the substrate. A first bias voltage is applied to the first GaN transistor via the integral heat spreader and a second bias voltage is applied to the second GaN transistor via the integral heat spreader.
H01L 23/367 - Cooling facilitated by shape of device
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
An electronic device includes a substrate and a first gallium nitride (GaN) transistor formed on a first semiconductor die that is electrically coupled to the substrate. A second GaN transistor is formed on a second semiconductor die and is also electrically coupled to the substrate. An integral heat spreader is thermally coupled to the first and the second gallium nitride semiconductor dies and is electrically coupled to the substrate. A first bias voltage is applied to the first GaN transistor via the integral heat spreader and a second bias voltage is applied to the second GaN transistor via the integral heat spreader.
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A GaN half bridge circuit is disclosed. The circuit includes a bootstrap power supply voltage generator is configured to supply a first power voltage and includes a switch node. The circuit also includes a bootstrap transistor, a bootstrap transistor drive circuit, and a bootstrap capacitor connected to the switch node and to the bootstrap transistor. The bootstrap capacitor is configured to supply the first power voltage while the voltage at the switch node is equal to the second switch node voltage, the bootstrap transistor is configured to electrically connect the bootstrap capacitor to a power node at a second power voltage while the voltage at the switch node is equal to the first switch node voltage, and the bootstrap power supply voltage generator does not include a separate diode in parallel with the drain and source of the bootstrap transistor.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H03K 17/081 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
84.
Systems and methods for automatic determination of state of switches in power converters
Systems and methods that automatically detect state of switches in power converters are disclosed. In one aspect, a power switch includes a first switch coupled between a power input node and a first terminal of a load, a second switch coupled between the power input node and a second terminal of the load, first and second current sense devices arranged to transmit first and second signals including at least one of a magnitude and polarity of first and second currents through the first and second switches, respectively, a first driver circuit arranged to transmit first control signals to the first switch based at least in part on a voltage at the power input node and the first signal, and a second driver circuit arranged to transmit second control signals to the second switch based at least in part on the voltage at the power input node and the second signal.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
A circuit is disclosed. The circuit includes a current detecting FET, configured to generate a current signal indicative of the value of the current flowing therethrough, an operational transconductance amplifier (OTA) configured to output a current in response to the voltage of the current signal, and a resistor configured to receive the current and to generate a voltage in response to the received current, where the generated voltage is indicative of the value of the current flowing through the current detecting FET. The current detecting FET is configured to become nonconductive in response to the generated voltage indicating that the current flowing through the current detecting FET is greater than a threshold.
G05F 1/573 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overcurrent detector
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
An electronic circuit is disclosed. The circuit includes a power transistor having a gate terminal, a source terminal and a drain terminal. The electronic circuit also has a driver to generate which selectively changes a voltage at the gate terminal. The driver circuit includes a pull-down switch configured to change the voltage on the gate terminal such that the resistance between the source terminal and the drain terminal increases. The electronic circuit also has an overvoltage protection circuit coupled to the gate terminal. The overvoltage protection circuit includes a selectively conductive device configured to become conductive while reverse biased in response to an overvoltage potential. While conductive, the selectively conductive device causes the resistance between the source terminal and the drain terminal to decrease. The overvoltage protection circuit is also causes the pull-down switch to be non-conductive by applying a signal to the pull-down switch.
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
87.
Thermally enhanced electronic packages for GaN power integrated circuits
An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H02M 7/219 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
09 - Scientific and electric apparatus and instruments
Goods & Services
Battery chargers; wireless chargers; electronic components in the nature of power semiconductors; semiconductor chips; semiconductor power elements; gallium nitride power semiconductors for use in electronic systems; electronic semiconductor circuits used to distribute power efficiently among multiple outputs in an AC-DC charging application; electronic components, namely, power semiconductors, for monitoring voltage, current, power and temperature in power semiconductors.
09 - Scientific and electric apparatus and instruments
Goods & Services
Battery chargers; wireless chargers; electronic components in the nature of power semiconductors; semiconductor chips; semiconductor power elements; gallium nitride power semiconductors for use in electronic systems; electronic semiconductor circuits used to distribute power efficiently among multiple outputs in an AC-DC charging application; electronic components, namely, power semiconductors, for monitoring voltage, current, power and temperature in power semiconductors.
09 - Scientific and electric apparatus and instruments
Goods & Services
Electronic components in the nature of power semiconductors; semiconductor chips; semiconductor power elements; semiconductor chips for use as a component of power supplies; semiconductor power elements for use as a component of power supplies
92.
Thermally enhanced electronic packages for GaN power integrated circuits
An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
A circuit is disclosed. The circuit includes first, second third and fourth diodes connected to form a bridge rectification circuit having a pair of input terminals to receive an AC input signal and a pair of output terminals to deliver a rectified DC signal. The circuit also includes a first semiconductor switch coupled in parallel with the first diode, a second semiconductor switch coupled in parallel with the second diode, and a switch control circuit coupled to the pair of input terminals and arranged to selectively operate the first and second semiconductor switches using power from the AC input signal at the pair of input terminals.
H02M 7/219 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
09 - Scientific and electric apparatus and instruments
Goods & Services
Battery chargers; wireless chargers; electronic components in the nature of power semiconductors; semiconductor chips; semiconductor power elements; gallium nitride power semiconductors for use in electronic systems; electronic semiconductor circuits used to distribute power efficiently among multiple outputs in an AC-DC charging application; electronic components, namely, power semiconductors, for monitoring voltage, current, power and temperature in power semiconductors.
09 - Scientific and electric apparatus and instruments
Goods & Services
battery chargers; wireless chargers; electronic components in the nature of power semiconductors; semiconductor chips; semiconductor power elements; gallium nitride power semiconductors for use in electronic systems; electronic semiconductor circuits used to distribute power efficiently among multiple outputs in an AC-DC charging application; electronic components, namely, power semiconductors, for monitoring voltage, current, power and temperature in power semiconductors
An electronic circuit is disclosed. The electronic circuit includes a GaN substrate, a first power supply node on the substrate, an output node, a signal node, and an output component on the substrate, where the output component is configured to generate a voltage at the output node based at least in part on a voltage at the signal node. The electronic circuit also includes a capacitor coupled to the signal node, where, the capacitor is configured to selectively cause the voltage at the signal node to be greater than the voltage of the first power supply node, such that the output component causes the voltage at the output node to be substantially equal to the voltage of the first power supply node.
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 23/528 - Layout of the interconnection structure
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
