Abstract

The present invention provides photodiode devices comprising lead-free nanocrystals, lead-free nanocrystals suitable for use in photodiode devices, and methods of producing the photodiode devices and lead-free nanocrystals. The present invention in particular provides a photodiode device comprising a top electrode and a bottom electrode; an active layer, wherein the active layer comprises lead-free nanocrystals; an electron transport layer adjacent to the active layer, wherein the electron transport layer comprises n-type lead-free nanocrystals and configured to extract electrons from the active layer; and a hole transport layer adjacent to the active layer, wherein the hole transport layer comprises p-type lead-free nanocrystals and configured to extract holes from the active layer.

IPC Classes  ?

• H10K 30/35 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
• C09K 11/00 - Luminescent, e.g. electroluminescent, chemiluminescent, materials
• H10H 20/851 - Wavelength conversion means
• H10K 30/00 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
• H10K 30/50 - Photovoltaic [PV] devices

Abstract

The present invention provides a method for producing a group III-V nanocrystal composition, the method comprising forming a first mixture comprising a first indium-containing compound and/or a first gallium-containing compound, a first ligand and a first solvent, adding at least one pnictogen-containing compound to the first mixture, and heating the first mixture to a growth temperature in the range of 200° C. to 350° C.; and adding an oxide removal reagent and a composition comprising group III-V clusters to the first mixture at the growth temperature over a total growth time of at least 6 hours to provide the group III-V nanocrystal composition. The present invention also provides cuboctahedral group III-V nanocrystals, which may be formed by the method of the invention.

IPC Classes  ?

• C07C 51/43 - SeparationPurificationStabilisationUse of additives by change of the physical state, e.g. crystallisation
• C01G 28/00 - Compounds of arsenic
• C07C 53/10 - Salts thereof
• C09D 11/037 - Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment

Abstract

The present invention provides the use of trialkoxy pnictide compounds in the preparation of indium pnictide nanocrystals. Additionally, the present invention provides a method for producing an indium pnictide nanocrystal composition, the method comprising a contacting step comprising contacting a precursor composition comprising an indium-containing compound with reagents comprising a trialkoxy pnictide compound.

IPC Classes  ?

• C09K 11/74 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
• C09K 11/75 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing arsenic, antimony or bismuth containing antimony

Abstract

The present invention provides the use of a lead (IV) containing compound to prepare a lead chalcogenide nanocrystal and a method for producing broadband lead chalcogenide nanocrystals in a low cost, size-controllable and scalable method, the method comprising contacting a lead (IV) containing compound with an organic acid and a chalcogen-containing reagent.

IPC Classes  ?

• C01G 21/20 - Sulfates
• B82Y 5/00 - Nanobiotechnology or nanomedicine, e.g. protein engineering or drug delivery
• B82Y 15/00 - Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
• B82Y 40/00 - Manufacture or treatment of nanostructures
• C01B 19/00 - SeleniumTelluriumCompounds thereof
• C01G 21/08 - Lead dioxide [PbO2]
• C01G 21/10 - Red lead [Pb3O4]
• G01N 1/30 - StainingImpregnating
• G01N 33/58 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving labelled substances
• G01S 7/481 - Constructional features, e.g. arrangements of optical elements
• G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar

Abstract

The present invention provides nanocrystals comprising chalcogenide halide ligands, and further provides inks and devices comprising these nanocrystals. The present invention also provides uses of the nanocrystals, inks and devices. The present invention additionally provides a method for nanocrystal ligand exchange to form these nanocrystals, the method comprising a contacting step comprising contacting a first nanocrystal composition comprising a plurality of nanocrystals, wherein the nanocrystals comprise a crystalline core and a plurality of native ligands coordinated to a surface of the crystalline core, and a second composition comprising a plurality of chalcogenide halide ligands.

IPC Classes  ?

• C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
• C09D 11/17 - Writing inks characterised by colouring agents
• C09K 11/66 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing germanium, tin or lead
• C09K 11/74 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing arsenic, antimony or bismuth

Abstract

The present invention provides a method for producing a nanocrystal composition comprising an inorganic ligand via a one-pot synthesis. The present invention also provides nanocrystals comprising novel inorganic ligands and the use of these nanocrystals. The present invention further provides the use of the novel inorganic ligands in the preparation of nanocrystals.

IPC Classes  ?

• C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
• C09K 11/66 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing germanium, tin or lead
• C09K 11/74 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing arsenic, antimony or bismuth

Abstract

The present invention provides a method for producing indium pnictogenide semiconductor nanocrystals with improved optical properties, the method comprising a contacting step comprising contacting a precursor composition comprising an indium-containing compound with reagents comprising an arsenic-containing compound and tris(dimethylamino) antimony. The present invention also provides indium mixed-pnictogenide semiconductor nanocrystals produced by the method of the present invention and uses thereof.

IPC Classes  ?

• C09K 11/74 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
• C09K 11/75 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing arsenic, antimony or bismuth containing antimony
• B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
• B82Y 40/00 - Manufacture or treatment of nanostructures
• C30B 29/40 - AIIIBV compounds

Abstract

The present invention provides a method for producing a group lll-V nanocrystal composition, the method comprising forming a first mixture comprising a first indium-containing compound and/or a first gallium-containing compound, a first ligand and a first solvent, adding at least one pnictogen-containing compound to the first mixture, and heating the first mixture to a growth temperature in the range of 200 °C to 350 °C; and adding an oxide removal reagent and a composition comprising group lll-V clusters to the first mixture at the growth temperature over a total growth time of at least 6 hours to provide the group lll-V nanocrystal composition. The present invention also provides cuboctahedral group lll-V nanocrystals, which may be formed by the method of the invention.

IPC Classes  ?

• C30B 7/14 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
• C30B 29/40 - AIIIBV compounds
• C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Abstract

The present invention provides a scalable method for producing indium pnictogenide nanocrystals comprising forming a mixture comprising an indium-containing compound, a pnictogen precursor composition, a plurality of ligands and a non-polar solvent; heating the mixture from a first temperature to a second temperature in the range of 160 °C to 350 °C; and maintaining the mixture at the second temperature for a first predetermined length of time in the range of 1 second to 180 minutes.

IPC Classes  ?

• C30B 7/14 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
• C30B 29/40 - AIIIBV compounds
• C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Abstract

The present invention provides a method for producing group III-V semiconductor nanocrystals using a polar solvent and a group III precursor comprising a group III metal having an oxidation state of +2 or +3. The present invention also provides group III-V semiconductor nanocrystals obtained by the method and covers uses of the group III-V semiconductor nanocrystals.

IPC Classes  ?

• C09K 11/74 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
• C01B 25/08 - Other phosphides
• C01G 28/00 - Compounds of arsenic
• C01G 30/00 - Compounds of antimony
• C09K 11/70 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing phosphorus
• C09K 11/75 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing arsenic, antimony or bismuth containing antimony

Abstract

The present invention provides the use of a lead (IV) containing compound to prepare a lead chalcogenide nanocrystal and a method for producing broadband lead chalcogenide nanocrystals in a low cost, size-controllable and scalable method, the method comprising contacting a lead (IV) containing compound with an organic acid and a chalcogen-containing reagent.

IPC Classes  ?

• C01G 21/21 - Sulfides
• B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
• B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
• B82Y 40/00 - Manufacture or treatment of nanostructures
• C01G 21/02 - Oxides
• C09K 11/66 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing germanium, tin or lead

Abstract

The present invention provides the use of a lead (IV) containing compound to prepare a lead chalcogenide nanocrystal and a method for producing broadband lead chalcogenide nanocrystals in a low cost, size-controllable and scalable method, the method comprising contacting a lead (IV) containing compound with an organic acid and a chalcogen-containing reagent.

IPC Classes  ?

• C01G 21/20 - Sulfates
• C01B 19/00 - SeleniumTelluriumCompounds thereof
• C01G 21/08 - Lead dioxide [PbO2]
• C01G 21/10 - Red lead [Pb3O4]
• G01S 7/481 - Constructional features, e.g. arrangements of optical elements
• G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
• B82Y 5/00 - Nanobiotechnology or nanomedicine, e.g. protein engineering or drug delivery
• B82Y 15/00 - Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
• B82Y 40/00 - Manufacture or treatment of nanostructures
• G01N 1/30 - StainingImpregnating
• G01N 33/58 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving labelled substances

Abstract

The present invention provides the use of a lead (IV) containing compound to prepare a lead chalcogenide nanocrystal and a method for producing broadband lead chalcogenide nanocrystals in a low cost, size-controllable and scalable method, the method comprising contacting a lead (IV) containing compound with an organic acid and a chalcogen-containing reagent.

IPC Classes  ?

• C01G 21/21 - Sulfides

Goods & Services

Chemicals for use in industry and science; biological preparations for use in industry and science; membranes in liquid chemical form for use in industry and science; chemical substances for impregnation into membranes used in industry and science; chemicals for use in sensors, detectors, emitters, displays, lighting, imaging for biotechnology and medicine, solar cells, photovoltaics, lasers, security and anti-counterfeiting products, quantum communication apparatus and telecommunication goods. Scientific, research, optical, signalling, detecting, testing, and inspecting apparatus and instruments; apparatus, instruments and software for recording, transmitting, reproducing or processing images; semi-conductor materials; quantum dots [crystalline semi-conductor materials]; quantum materials, including semi-conductor nano devices in the form of crystals, dots, flakes, rods, lines, wells, wires; sensors, detectors, emitters; image sensors; displays including optical film displays, LED displays, LCD panels and electroluminescent display devices; quantum communication goods in the nature of quantum teleportation apparatus, quantum hyper-dense coding apparatus, quantum cryptography apparatus, quantum computing apparatus for superposition and control entanglement and quantum dot lasers for use in optical data communications and optical networks; telecommunications goods including transmitters, receivers, transceivers, repeaters, hubs, bridges, switches, routers and gateways; biosensors; imaging apparatus for biotechnology and medical purposes; solar cells; photovoltaics apparatus; laser instruments including lasers for scientific use, bioimaging, projection, laser TV, spectroscopy; lighting apparatus and instruments, including light-emitting diodes, lighting controls, light conducting filaments and quantum dot light-emitting diodes; security and anti-counterfeiting devices incorporating quantum dots ink; membranes for filtration [scientific]; parts and fittings for all of the aforesaid. Apparatus and installations for water supply and sanitary purposes; membranes for filtration of water; parts and fittings for all of the aforesaid.

Goods & Services

Chemicals for use in industry and science; biological preparations for use in industry and science; chemical substances for impregnation into membranes used in industry and science; chemicals for use in industry and science, namely for use in sensors, detectors, emitters, electronic displays, lighting, imaging devices for biotechnology and medicine, solar cells, photovoltaic cells, lasers, security and anti-counterfeiting products, quantum communication apparatus and telecommunication goods Scientific, research, optical, signalling, detecting, testing, and inspecting apparatus and instruments, namely, optical sensors, infrared sensors, alarm sensors, ultrasonic sensors, pressure sensors, temperature sensors, electric sensors, liquid level sensors, sensors for measuring concentrations of chemicals in water, filling level detectors, metal detectors, photoelectric sensors, light emitting diodes (LEDs), electronic display screens, electronic display boards, electronic display devices being display panels and video screens incorporating quantum dot technology, electronic display interfaces, light switches, light diodes, light dimmers, emergency warning lights, infrared imaging system comprised of infrared sensors not for medical use, solar cells, photovoltaic cells, lasers for non-medical purposes, counterfeit money detector markers, counterfeit money detector pens, counterfeit money detection light to be used in retail stores and banks, quantum computers, quantum dot light-emitting diodes (QLED), optical camera communication devices being apparatus for transmission of communication, optical fiber communication devices being apparatus for transmission of communication, fibre optics, optic fibre devices being fibre optic receivers and fibre optic transmitters, optoelectronic devices for use in the optical fibre industry being optoelectronic signal transmitters and detectors, optical and infrared scanners for reading, screening and authenticating passports and currency, and electronic readers for reading, screening and authenticating passports and currency; apparatus, instruments and downloadable computer software for recording, transmitting, reproducing or processing images; semi-conductor materials, namely, semiconductors and semiconductor devices; quantum dots, namely, crystalline semi-conductor materials; quantum materials, namely, semi-conductor and electronic nanomaterials in the nature of crystalline semi-conductor material, quantum dot light emitting diodes (QLED), and quantum dots, namely, crystalline semi-conductor materials, flakes, rods, wells, and wires; electric sensors, optical sensors, infrared detectors, metal detectors, light emitting diodes; image sensors; displays, namely, thin film transistor-liquid crystal display (TFT-LCD) panels, LED displays, LCD panels and electroluminescent display panels; quantum communication goods in the nature of quantum teleportation apparatus, quantum hyper-dense coding apparatus, quantum cryptography apparatus, quantum computing apparatus for superposition and control entanglement and quantum dot lasers for use in optical data communications and optical networks; telecommunications goods, namely, wireless transmitters, wireless receivers, transceivers, Ethernet repeaters, communication hubs, computer network bridges, Ethernet switches, network routers and wireless gateway routers; biosensors, namely, sensors for scientific use to gather measurable biometric and biochemical health-related data from humans and animals; solar cells; photovoltaics apparatus, namely, photovoltaic cells and modules, photovoltaic inverters; laser instruments, namely, lasers for scientific use, non-medical bioimaging lasers, non-medical projection lasers, laser TV, and non-medical lasers for spectroscopy; lighting apparatus and instruments, namely, light-emitting diodes, lighting controls, light conducting filaments and quantum dot light-emitting diodes; security and anti-counterfeiting devices incorporating quantum dots ink, namely, encoded bar code labels and electronic tags for goods; laboratory apparatus, namely, filtration membranes for laboratory use; structural replacement parts and fittings for all of the aforesaid apparatus Apparatus and installations for water supply and sanitary purposes, namely, desalination units, waste water purification apparatus, waste water purification installations, and waste water treatment tanks; water filtering apparatus, namely, membranes for filtration of water for use in water filtering apparatus; structural replacement parts and fittings for all of the aforesaid goods

Abstract

The present invention provides the use of a lead (IV) containing compound to prepare a lead chalcogenide nanocrystal and a method for producing broadband lead chalcogenide nanocrystals in a low cost, size-controllable and scalable method, the method comprising contacting a lead (IV) containing compound with an organic acid and a chalcogen-containing reagent.

IPC Classes  ?

• C09K 11/56 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing sulfur