Embodiments of the present disclosure provide crystal growth methods and devices. The crystal growth methods include placing a feedstock in a material zone of a growth chamber and placing a seed crystal in a growth zone of the growth chamber. The material zone and the growth zone are separated by a partition, and the partition includes at least one outlet. The crystal growth methods further include growing a crystal based on the seed crystal and the feedstock by a physical vapor transport (PVT) manner.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
The embodiment of the present description provides a crystal treatment method. The crystal treatment method comprises: acquiring an initial crystal; and determining a treatment scheme for the initial crystal, and treating the initial crystal on the basis of the treatment scheme.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
G01N 21/41 - RefractivityPhase-affecting properties, e.g. optical path length
3.
METHODS AND DEVICES FOR GROWING CRYSTALS WITH HIGH UNIFORMITY WITHOUT ANNEALING
The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
C30B 15/10 - Crucibles or containers for supporting the melt
C30B 15/14 - Heating of the melt or the crystallised materials
C30B 15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal
The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
C30B 15/10 - Crucibles or containers for supporting the melt
C30B 15/14 - Heating of the melt or the crystallised materials
C30B 15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal
The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.
C30B 15/28 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
The present disclosure provides a device and method for growing a crystal. A crystal preparation device includes a growth chamber, a heating component, and a filter component. The heating component includes at least one heating unit. The at least one heating unit is located in the growth chamber. The at least one heating unit is an inverted cone structure. An angle between a side surface of the inverted cone structure and an upper surface of the inverted cone structure is within a range of 5°-45°. The filter component is located in the growth chamber. An inner sidewall of the filter component is connected with the at least one heating unit. A gas phase channel is formed between an outer sidewall of the filter component and an inner sidewall of the growth chamber.
One embodiment of the present disclosure provides a scintillation crystal and a method and a device for preparing the scintillation crystal. A molecular formula of the scintillation crystal is: Cey:Cas:Lu2(1-xysz)Y2zSc2xSiO5, wherein x=0-1, y=0.0000001-0.06, z=0.00001-0.5, s=0.0000001-0.05.
A crystal preparation apparatus (100) and a crystal preparation method (700). The crystal preparation apparatus (100) comprises: a growth cavity (110), the growth cavity (110) being internally provided with at least one layer of plate assembly (111); and a heating assembly (120), used for heating the growth cavity (110). The crystal preparation method (700) comprises: placing a raw material in the growth cavity (110) (710), the growth cavity (110) being internally provided with at least one layer of plate assembly (111); heating the growth cavity (110) by means of the heating assembly (120) so as to melt the raw material into a melt (720); bonding a seed crystal (180) to a seed crystal holder (150) (730); lowering the seed crystal holder (150) to which the seed crystal (180) is bonded, so that the seed crystal (180) is in contact with the melt; and preparing a crystal on the basis of the seed crystal (180) and the melt (750).
Embodiments of the present disclosure provide a crystal growth device including: a crucible including a raw material cavity for placing a raw material and a growth cavity for crystal growth; and at least one insulation device disposed on at least one side surface outside the crucible.
Embodiments of the present description provide a connecting device. The device comprises a seed crystal support and a seed crystal rod, and the seed crystal support is connected to one end of the seed crystal rod.
The present disclosure provides a polishing device comprising a frame (1), and a polishing disc (2), an assistant polishing disc (3), and a fixture (5) that are disposed on the frame (1). At least one polishing position (4) is disposed on the assistant polishing disc (3). The assistant polishing disc (3) is clamped by the fixture (5) and in contact with the polishing disc (2). The fixture (5) includes a plurality of claws (52), the plurality of claws (52) include at least a first claw extending from above the at least one polishing position (4) to an edge of the assistant polishing disc (3). A pre-tightening part is disposed on a position, corresponding to the at least one polishing position (4), of the first claw. The pre-tightening part includes a scale and a pre-tightening member. A scale value representing a polishing removal efficiency is preset on the scale.
The present disclosure provides a method for growing scintillation crystals with multi-component garnet structure. According to the method, through weight compensating for reactants, introducing a flowing gas, adopting a new temperature field device, and optimizing process parameters, problems such as component deviation and crystal cracking during the crystal growth can be solved to a certain extent, and grown crystals have consistent performance and good repeatability.
C30B 29/28 - Complex oxides with formula A3Me5O12, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
The present disclosure relates to a method for growing a crystal. The method includes: weighing reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
A crystal preparation method. The method comprises: obtaining a first crystal wafer that has undergone first treatment; using the first crystal wafer that has undergone the first treatment as a first seed crystal, and growing a prefabricated crystal on the basis of a top-seeded solution growth method; carrying out second treatment on the prefabricated crystal; and using the prefabricated crystal that has undergone the second treatment as a second seed crystal, and growing a target crystal on the basis of a physical vapor transport method.
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
Embodiments of the present disclosure provide a sealing structure and a vacuum furnace. The sealing structure includes a baffle plate provided with a first through-hole, a first structural component provided with an internal hole for a component to be sealed to extend through, and a sealing assembly for sealing a gap between the baffle plate and the first structural component and a gap between the component to be sealed and the first structural component. The first through-hole extends through a first side surface and a second side surface of the baffle plate. The first structural component is connected to the baffle plate, at least a part of the internal hole is located within the first through-hole, and at least the part of the internal hole is not parallel to both the first side surface and the second side surface.
F27B 5/06 - Details, accessories or equipment specially adapted for furnaces of these types
F27B 5/04 - Muffle furnacesRetort furnacesOther furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
F27D 7/06 - Forming or maintaining special atmospheres or vacuum within heating chambers
16.
METHODS AND DEVICES FOR PREPARING CRYSTAL CLADDINGS
Disclosed are a method and a device for preparing a crystal cladding. The method may include preparing an amorphous material; melting the amorphous material to form an amorphous melt; submerging an optical fiber core in the amorphous melt; forming an amorphous cladding around a periphery of the optical fiber core; and obtaining the crystal cladding by performing a crystallization process on the amorphous cladding. The device may include an amorphous material preparation component configured to prepare an amorphous material; an amorphous cladding preparation component configured to melt the amorphous material to form an amorphous melt, submerge an optical fiber core in the amorphous melt, and form an amorphous cladding around a periphery of the optical fiber core based on the amorphous melt and the optical fiber core; and a crystal cladding preparation assembly configured to perform a crystallization process on the amorphous cladding to obtain a crystal cladding.
C30B 7/10 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
C30B 7/14 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
C30B 29/28 - Complex oxides with formula A3Me5O12, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Embodiments of the present description provide a control method, system and device for a crystal growth device, the method comprising: obtaining historical growth data of at least one crystal growth device, the historical growth data at least comprising historical growth control data and historical growth result data; on the basis of the historical growth data and a target growth result, determining a control mode of a target crystal growth device, the control mode comprising at least one of a temperature control mode and a power control mode.
A detection method (900, 1000, 1300, 1500), a detection device (110, 200, 300, 400) and a detection system (100). The detection method (900, 1000, 1300, 1500) comprises the following steps: acquiring a detection image of an optical workpiece (500) under the irradiation of a detection light beam (910); and on the basis of the detection image, determining a detection result of the optical workpiece (500) (920).
A crystal preparation device and a crystal preparation method. The crystal preparation device comprises: a cavity (200), which is configured to accommodate raw material; a laser heating assembly, which is configured to heat the raw material; and a control assembly, which is configured to adjust heating parameters of the laser heating assembly in real time during crystal growth.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
21.
HEATING SYSTEM AND HIGH-FREQUENCY POWER SUPPLY FOR HEATING SYSTEM
Provided in the embodiments of the present description are a heating system and a high-frequency power supply for a heating system. The heating system comprises: a pot body, which is used for containing powder to be heated; a high-frequency power supply, which is used for providing an output signal having a power of not less than 5 kW and a frequency of not lower than 1 MHz; and a resonant assembly, which is used for generating, under the driving of the output signal, an electromagnetic field for directly heating said powder. In the present description, a high-frequency signal is provided for the resonant assembly by means of the high-frequency power supply, and the resonant assembly is driven to generate the electromagnetic field to directly act on the powder, such that energy transmitted to a crucible is reduced while the powder is heated, and deformation or volatilization of the crucible due to heating is prevented, thus realizing the heating of high-melting-point powder.
The present disclosure provides a window device for a furnace. The window device may include a frame placed on a sidewall of the furnace; a window placed on the frame; an air inlet placed on the frame; and a plurality of air outlets. The plurality of air outlets may be connected to the air inlet and an interior of the furnace. Each of two of the plurality of air outlets may connect with an air venting pipeline. Tangential directions of two air venting pipelines connected with two air outlets among the plurality of air outlets may form an angle and the angle may be within an angle range.
Disclosed are a method and a device for preparing a single-crystal cladding. The method may include preparing an amorphous material; melting the amorphous material to form an amorphous melt; submerging an optical fiber in the amorphous melt; forming an amorphous cladding around a periphery of the optical fiber; and obtaining the single-crystal cladding by performing a crystallization process on the amorphous cladding. The device may include an amorphous material preparation component configured to prepare an amorphous material; an amorphous cladding preparation component configured to melt the amorphous material to form an amorphous melt, submerge an optical fiber in the amorphous melt, and form an amorphous cladding around a periphery of the optical fiber based on the amorphous melt and the optical fiber; and a single-crystal cladding preparation assembly configured to perform a crystallization process on the amorphous cladding to obtain a single-crystal cladding.
The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.
The present disclosure provides a method for producing a composite crystal, the method is performed in a multi-chamber growth device, and the multi-chamber growth device includes a plurality of chambers. The method includes conveying and processing at least one substrate between a plurality of chambers and obtaining at least one composite crystal by growing a target crystal through vapor deposition in one of the plurality of chambers, the at least one composite crystal including the at least one substrate and the target crystal.
A crystal growth method and apparatus. The method comprises placing a raw material in a raw material area of a growth cavity; placing a seed crystal in a growth area of the growth cavity, wherein the raw material area and the growth area are separated by a partition plate, and the partition plate comprises at least one discharge port; and growing a crystal by means of a physical vapor transport method on the basis of the seed crystal and the raw material.
Provided in the embodiments of the description are a seed crystal holder and a crystal growth method. The seed crystal holder comprises a seed crystal holder body and a connecting rod. The seed crystal holder body is fixed to one end of the connecting rod. A seed crystal bonding surface is arranged on the side of the seed crystal holder body away from the connecting rod.
The present disclosure relates to a method for growing a crystal. The method includes: weighing reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
30.
CRYSTAL PREPARATION DEVICE AND CRYSTAL PREPARATION METHOD
A crystal preparation device (100) and a crystal preparation method. The crystal preparation device (100) comprises: a growth chamber (110), configured to place a raw material; a heating assembly (120), configured to heat the growth chamber (110); a pulling assembly (130), configured to perform pulling growth; and a guide assembly (140), the guide assembly (140) being transmittingly connected to the pulling assembly (130). The crystal preparation method comprises: (S910) placing the raw material in the growth chamber (110); (S920) lowering the pulling assembly (130) on which a seed crystal is bonded to the vicinity of the raw material, wherein the pulling assembly (130) is transmittingly connected to the guide assembly (140) and is at least partially located in the guide assembly (140; (S930) heating the growth chamber (110) to form a raw material melt; and (S940) growing a crystal by means of the transmission motion between the pulling assembly (130) and the guide assembly (140) and on the basis of the seed crystal and the raw material melt.
A crystal preparation apparatus (100) and a crystal preparation method (700). The crystal preparation apparatus (100) comprises: a growth cavity (110), the growth cavity (110) being internally provided with at least one layer of plate assembly (111); and a heating assembly (120), used for heating the growth cavity (110). The crystal preparation method (700) comprises: placing a raw material in the growth cavity (110) (710), the growth cavity (110) being internally provided with at least one layer of plate assembly (111); heating the growth cavity (110) by means of the heating assembly (120) so as to melt the raw material into a melt (720); bonding a seed crystal (180) to a seed crystal holder (150) (730); lowering the seed crystal holder (150) to which the seed crystal (180) is bonded, so that the seed crystal (180) is in contact with the melt (740); and preparing a crystal on the basis of the seed crystal (180) and the melt (750).
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
C30B 11/14 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method characterised by the seed, e.g. its crystallographic orientation
C30B 19/06 - Reaction chambersBoats for supporting the meltSubstrate holders
32.
MOLD PROCESSING METHOD, AND WORKPIECE POLISHING METHOD AND SYSTEM
A mold processing method, and a workpiece polishing method and system. The mold processing method comprises: acquiring first surface information of a first mold, wherein the first mold is manufactured on the basis of initial processing information; obtaining compensation information on the basis of the first surface information and target surface information; generating target processing information on the basis of the initial processing information and the compensation information; and preparing a standard mold on the basis of the target processing information, wherein the standard mold comprises a mold body and a covering layer. The mold processing method can improve the precision and consistency of mold processing. The workpiece polishing method comprises: determining at least a first polishing region and a second polishing region of a workpiece; polishing the first polishing region by using a first polishing mold; and polishing the second polishing region by using a second polishing mold, wherein the radius of curvature of the polishing surface of the first polishing mold is different from that of the polishing surface of the second polishing mold. The workpiece polishing method can realize standardized batch polishing.
B23P 15/24 - Making specific metal objects by operations not covered by a single other subclass or a group in this subclass dies
B23P 23/04 - Machines or arrangements of machines for performing specified combinations of different metal-working operations not covered by a single other subclass for both machining and other metal-working operations
Embodiments of the present description provide a connecting device. The device comprises a seed crystal support and a seed crystal rod, and the seed crystal support is connected to one end of the seed crystal rod.
The embodiments of the present description provide a crystal growth device, comprising: a crucible, the crucible comprising a raw material cavity used for placing raw materials, and a growth cavity used for crystal growth; and a thermal insulation apparatus arranged on at least one side surface outside the crucible.
A polishing apparatus, comprising a frame (1), and a polishing disc (2), an accompanying polishing disc (3) and a clamp (5) arranged on the frame (1). At least one polishing position (4) used for placing a workpiece to be polished is arranged on the accompanying polishing disc (3), the accompanying polishing disc (3) is clamped by means of the clamp (5) and comes into contact with the polishing disc (2), so as to achieve polishing of the workpiece to be polished in the polishing position (4) by means of rotation and/or oscillation. The clamp (5) comprises a plurality of clamping jaws (52), the clamping jaws (52) at least comprise a first clamping jaw extending from above the at least one polishing position (4) to the edge of the accompanying polishing disc (3), and a pre-tightening part is arranged at a position, corresponding to the at least one polishing position (4), of the first clamping jaw. The pre-tightening part comprises a scale ruler and a pre-tightening piece, scale values representing polishing removal efficiency are preset on the scale ruler, and the pre-tightening piece adjusts the polishing efficiency of the workpiece to be polished on the basis of the scale values. The described arrangement achieves safe and efficient polishing machining of small-size workpieces.
B24B 13/00 - Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other workAccessories therefor
A sealing structure and a vacuum furnace. The sealing structure comprises: a baffle (100), a first through hole (110) being formed on the baffle (100), the first through hole (110) passing through a first side surface (101) and a second side surface (102) of the baffle (100); a first structural member (200), an inner hole (201) for a member to be sealed (300) to pass through being formed on the first structural member (200), the first structural member (200) being connected to the baffle (100), the inner hole (201) being at least partially located in the first through hole (110), and at least a part of the inner hole (201) being parallel to neither the first side surface (101) nor the second side surface (102); and a sealing assembly (400) for sealing a gap between the baffle (100) and the first structural member (200) and sealing a gap between the member to be sealed (300) and the first structural member (200).
The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
C30B 15/10 - Crucibles or containers for supporting the melt
C30B 15/14 - Heating of the melt or the crystallised materials
C30B 15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal
The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a filler filled in a space between the first drum and the second drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.
The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.
The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.
The present disclosure provides an apparatus for crystal growth. The apparatus may include a furnace chamber a temperature field device placed at least partially into the furnace chamber. The furnace chamber may be a non-closed structure, and the temperature field device may be sealed.
A window apparatus (100) for an oven body (10), the window apparatus (100) comprising a frame body (120), the frame body (120) being disposed on a side wall of the oven body (10); a window (110), the window (110) being disposed on the frame body (120); a gas inlet (130), the gas inlet (130) being disposed on the frame body (120); and at least two gas outlets (160), the at least two gas outlets (160) being in communication with the gas inlet (130) and an interior of the oven body (10); a tangential direction of gas outlet pipes at the at least two gas outlets (160) is within a preset angle range.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
43.
METHOD AND APPARATUS FOR PREPARING SINGLE CRYSTAL CLADDING
A method and apparatus for preparing a single crystal cladding. The method comprises: preparing an amorphous phase material; melting the amorphous phase material to form an amorphous melt; immersing an optical fiber in the amorphous melt; forming an amorphous phase cladding at the periphery of the optical fiber on the basis of the amorphous melt and the optical fiber; and performing crystallization processing on the amorphous phase cladding to obtain a single crystal cladding. The apparatus comprises an amorphous phase material preparation component, an amorphous phase cladding preparation component, and a single crystal cladding preparation component. The amorphous phase material preparation component is used for preparing an amorphous phase material. The amorphous phase cladding preparation component is used for melting the amorphous phase material to form an amorphous melt, immersing an optical fiber in the amorphous melt, and forming an amorphous phase cladding at the periphery of the optical fiber on the basis of the amorphous melt and the optical fiber. The single crystal cladding preparation component is used for performing crystallization processing on the amorphous phase cladding to obtain a single crystal cladding.
The present disclosure provides a method for growing a seed crystal, including: obtaining a plurality of orthohexagonal seed crystals in a hexagonal crystal system by performing a first cutting on a plurality of seed crystals in the hexagonal crystal system to be expanded, respectively; splicing the plurality of orthohexagonal seed crystals in the hexagonal crystal system; obtaining a seed crystal in the hexagonal crystal system to be grown by performing a second cutting on the plurality of spliced orthohexagonal seed crystals in the hexagonal crystal system; obtaining an intermediate seed crystal in the hexagonal crystal system by performing a gap growth on the seed crystal in the hexagonal crystal system to be grown under a first setting condition; and obtaining a target seed crystal in the hexagonal crystal system by performing an epitaxial growth on the intermediate seed crystal in the hexagonal crystal system under a second setting condition.
A method for preparing a composite crystal, which is performed in a multi-cavity growing apparatus (200), the multi-cavity growing apparatus (200) comprising multiple cavities. The method for preparing a composite crystal comprises: successively performing transfer and treatment on a substrate between multiple cavities; growing a crystal by means of vapor deposition in one cavity among multiple cavities, and obtaining a composite crystal comprising the substrate and a target crystal.
The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.
C30B 15/26 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using television detectorsStabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using photo or X-ray detectors
C30B 15/28 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
G05B 15/02 - Systems controlled by a computer electric
The embodiments of the present description disclose a crystal growth control method, comprising: acquiring actual crystal parameters in a target time slice; acquiring reference crystal parameters in the target time slice; on the basis of the actual crystal parameters and the reference crystal parameters, determining temperature control parameters; on the basis of the actual crystal parameters and the reference crystal parameters, determining pulling control parameters; and on the basis of the temperature control parameters and the pulling control parameters, adjusting the temperature and the pulling speed of the next time slice of the target time slice respectively.
C30B 15/28 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
C30B 28/10 - Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
The present disclosure relates to a method for growing a crystal. The method includes: weighting reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
The present disclosure provides a device for preparing a crystal and a method for growing a crystal. The device may include a growth chamber configured to execute a crystal growth; and a temperature control system configured to heat the growth chamber to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during the crystal growth. The method may include placing a seed crystal and a source material in a growth chamber to grow a crystal; and controlling a heating component based on information of a temperature sensing component, to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during a crystal growth.
The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber, wherein a cover plate of the temperature field device includes a first through hole; and a pulling rod component that passes through the first through hole and extends into the temperature field device.
The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber; a pulling rod component that extends into the temperature field device; and a weighting component configured to determine a weight of a crystal being grown on the pulling rod component.
The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber; a pulling rod component that extends into the temperature field device; a pulling component configured to drive the pulling rod component to move up and down; and a rotating component configured to drive the pulling rod component to rotate.
The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber; a pulling rod component that extends into the temperature field device; and a pulling component configured to drive the pulling rod component to move up and down. The pulling component may include a driving device, a pillar, a slide, and a screw rod. The driving device is mounted on a top of the pillar; the pillar includes slide rail; the screw rod is mounted in parallel with the slide rail and one end of the screw rod is connected to the driving device; the slide is nested on the screw rod, at least a part of the slide is located within the slide rail, and a rotation of the screw rod drives the slide to move up and down.
The present disclosure provides a method for preparing a doped YAG single crystal fiber. The method may include preparing a doped YAG crystal rod; preparing a doped YAG single crystal fiber core by immersing at least a portion of the doped YAG crystal rod in an acid solution; performing a cylindrical surface polishing operation on the doped YAG single crystal fiber core by causing a stirrer to rotate to drive a polishing liquid to rotate; placing the doped YAG single crystal fiber core into a growth zone of a growth chamber and placing a raw material into a dissolution zone of the growth chamber; heating the growth zone and the dissolution zone by a two-stage heating device, respectively; and preparing a doped YAG single crystal fiber by growing a YAG single crystal fiber cladding on a surface of the doped YAG single crystal fiber core.
C30B 7/10 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
C30B 29/28 - Complex oxides with formula A3Me5O12, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
C30B 7/14 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
Embodiments of the present disclosure may provide a system for preparing a crystal. The system may include a furnace, a heat insulation drum, a crucible component, a resistance heating component, and a heat insulation layer. The heat insulation drum may be located inside the furnace. The crucible component may be located inside the heat insulation drum. The resistance heating component may include a heating body. The heating body may include a plurality of heating units. The plurality of heating units may form a uniform temperature field. The heat insulation layer may be located around an outer side of the plurality of heating units, a top portion of the heat insulation drum, and/or a bottom portion of the crucible component.
The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
C30B 15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal
A method for crystal growth, comprising subjecting each reaction material for growing an oxide crystal to a first pretreatment and then weighing the reaction material; after performing a pre-assembly treatment of at least one component of a crystal growth device, placing the reaction material that has been subjected to a second pretreatment into the crystal growth device, wherein the at least one component of the crystal growth device comprises a pot (214), and the pre-assembly treatment comprises subjecting the pot (214) to at least one of coating protection, acid bath washing, and foreign body cleaning; sealing the crystal growth device and then introducing a flowing gas into the interior of the crystal growth device; and adding in real time, a reaction material supplement into the crystal growth device during a crystal growth process.
Disclosed are a crystal preparation apparatus and a crystal growth method. The apparatus comprises a growth cavity which is used for crystal growth, and a temperature control system which is used for heating the growth cavity and ensuring that the radial temperature difference in the growth cavity during crystal growth does not exceed a first preset range of the average temperature in the growth cavity. The method comprises: placing a seed crystal and a source material in a growth cavity for crystal growth; and in the process of crystal growth, controlling a heating component on the basis of information from a temperature sensing component, so that the radial temperature difference in the growth cavity during crystal growth does not exceed a first preset range of the average temperature in the growth cavity.
Disclosed in embodiments of the present application are a crystal growth method and device. The crystal growth method comprises: placing a seed crystal and a target source material in a growth cavity of a crystal growth device; growing a crystal by means of a physical vapor transport method based on the seed crystal and the target source material; determining whether a preset condition is satisfied or not in the crystal growth process; and if the preset condition is satisfied, replacing the sublimated target source material with an alternative source material. By replacing the sublimated target source material with the alternative source material, large-size and high-quality crystals can be obtained by means of growth.
The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
61.
Method for preparing doped yttrium aluminum garnet single crystal fiber by performing a cylindrical surface polishing operation and growing a cladding layer
The present disclosure provides a method for preparing a doped YAG single crystal fiber. The method may include placing a doped YAG single crystal fiber core into a growth zone and placing a raw material into a dissolution zone; adding a mineralizer into the growth chamber to cause the mineralizer to immerse the raw material and the doped YAG single crystal fiber core; heating the growth zone and the dissolution zone by a two-stage heating device, respectively; and preparing a doped YAG single crystal fiber by growing a YAG single crystal fiber cladding on a surface of the doped YAG single crystal fiber core based on the doped YAG single crystal fiber core and the raw material under a preset pressure.
C30B 7/10 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
C30B 29/28 - Complex oxides with formula A3Me5O12, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
C30B 7/14 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
The present disclosure provides a method for growing scintillation crystals with multi-component garnet structure. According to the method, through weight compensating for reactants, introducing a flowing gas, adopting a new temperature field device, and optimizing process parameters, problems such as component deviation and crystal cracking during the crystal growth can be solved to a certain extent, and grown crystals have consistent performance and good repeatability.
C30B 29/28 - Complex oxides with formula A3Me5O12, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
C30B 15/30 - Mechanisms for rotating or moving either the melt or the crystal
63.
Temperature field device comprising a first drum, a second drum, and a filler inside the second drum and a space between the second drum and the first drum
The present disclosure provides an open temperature field device, including a bottom plate, a drum, a filler, and a cover plate. The bottom plate may be mounted on a bottom of the temperature field device and cover an open end of the drum. The cover plate may be mounted on a top of the temperature field device and cover the other open end of the drum. The filler may be filled inside the drum. In the temperature field device, the filler filled inside the drum can form a new thermal insulation layer, which effectively prevents the problem of sudden temperature changes caused by the cracking of the drum and improves the stability performance and a count of reusable times of the temperature field device. Meanwhile, by adjusting the filling height and the tightness of the filler, the temperature gradient of the temperature field device can be adjusted.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
C30B 15/14 - Heating of the melt or the crystallised materials
The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
65.
Crystals for detecting neutrons, gamma rays, and x rays and preparation methods thereof
2↑; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.
2↑; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.
The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
68.
Open Czochralski furnace for single crystal growth
The present disclosure provides an open Czochralski furnace for single crystal growth. The crystal growth apparatus may include a furnace chamber which includes a furnace body and a furnace cover. The furnace cover may be mounted on a top of the furnace body. The furnace cover may include a first through hole. The first through hole may be configured to place a temperature field. The crystal growth apparatus in the present disclosure can solve a problem that a traditional vacuum furnace needs to firstly pump a high vacuum and secondly recharge a protecting gas, thereby improving the apparatus safety; simplify the structure of the furnace body such that components that need maintenance and repair can be disassembled quickly, thereby reducing manufacturing and maintenance costs; improve the operation accuracy and stability of the apparatus; and reduce the influence of heat convection on the stability of weighing signals in the open furnace.
The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method includes compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, cracking and component deviation of the crystal during a crystal growth process, and without oxygen free vacancy can be solved. The method for growing the crystal has excellent repeatability and crystal performance consistency.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
71.
Methods and devices for growing scintillation crystals with short decay time
The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Provided are crystals capable of simultaneously detecting neutrons and γ/X-rays and a preparation method thereof, wherein the method comprises: according to a reaction equation (1) or (2), reaction materials in the formula after a first pretreatment are weighed by a molar ratio of X2O3+yY2O3+SiO2+ 2xCeO2+zZ2O3: wherein, x＝0.0001％-6％, y＝0.001％-100％, Z represents one or more elements of Li, B and Gd, Z = 0.0001 -6%, and X represents one or more elements of Lu, La, Y, Gd, Pr, Ce, Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb, Mn, Mg, Ca, Al, Fe, Sr and Ba. SiO2 exceeds 0.01%-10% of its own weight; after at least one component of a crystal growth device is subjected to a pre-assembly treatment, the reaction materials after a second pretreatment are placed in the crystal growth device; after the crystal growth device is closed, flowing gas is introduced into the inside; the crystal growth device is started to grow crystals on the basis of an upward pulling method.
The present invention provides a multi-component garnet-structured scintillation crystal growth method. According to the method, by performing weight compensation on reaction materials, introducing flowing gas, using a novel temperature field device, and optimizing process parameters, component deviation and cracking during crystal growth can be suppressed to a certain extent; in addition, the grown crystals have consistent performance and good repeatability.
An open temperature field, comprising a bottom plate (102), a cylinder, a filling body (108), and a cover plate; wherein the bottom plate (102) is provided on the bottom of a temperature field device and covers one opening end of the cylinder; the cover plate is provided on the top of the temperature field device and covers the other opening end of the cylinder; the filling body (108) is filled inside the cylinder. According to the temperature field device, the filling body (108) filled inside the cylinder forms a new thermal insulation layer, so that the problem of the abrupt change of temperature caused by cylinder cracking is effectively prevented, and the stability and the number of times of reutilization of the temperature field device are improved; meanwhile, the temperature gradient of the temperature field device can be adjusted by adjusting a filling height and pressing degree of the filling body (108).
Disclosed by the present application is a pull-up open-type single-crystal furnace. The crystal growth device comprises a furnace; the furnace comprises a furnace body and a furnace cover; the furnace cover is arranged on the top of the furnace body; the furnace cover is provided with a first through-hole; the first through-hole is used for placing a temperature field. The crystal growth device of the present application solves the problem of it being necessary to pump a high vacuum and then fill with protective gas of conventional vacuum furnaces, and also improves the safety of the device; the furnace structure is simplified, and all parts of the structure requiring maintenance can be quickly disassembled and assembled, reducing manufacturing and maintenance costs; device operation accuracy and stability are improved; the impact of an open-type furnace on the stability of a weight signal due to heat convection is resolved.
Disclosed is a growth method for a scintillation crystal with a shortened decay time. The method uses a single crystal furnace equipment and a temperature field device and adjusts and optimizes the technological process and growth parameters, and a scintillation crystal having a short decay time, a high luminous intensity and a high luminous efficiency can be obtained without requiring a double mixing treatment.
2↑; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.
Temperature field device comprising a first drum, a second drum, and a filler inside the second drum and a space between the second drum and the first drum
The present disclosure provides an open temperature field device, including a bottom plate, a drum, a filler, and a cover plate. The bottom plate may be mounted on a bottom of the temperature field device and cover an open end of the drum. The cover plate may be mounted on a top of the temperature field device and cover the other open end of the drum. The filler may be filled inside the drum. In the temperature field device, the filler filled inside the drum can form a new thermal insulation layer, which effectively prevents the problem of sudden temperature changes caused by the cracking of the drum and improves the stability performance and a count of reusable times of the temperature field device. Meanwhile, by adjusting the filling height and the tightness of the filler, the temperature gradient of the temperature field device can be adjusted.
The present disclosure provides an open Czochralski furnace for single crystal growth. The crystal growth apparatus may include a furnace chamber which includes a furnace body and a furnace cover. The furnace cover may be mounted on a top of the furnace body. The furnace cover may include a first through hole. The first through hole may be configured to place a temperature field. The crystal growth apparatus in the present disclosure can solve a problem that a traditional vacuum furnace needs to firstly pump a high vacuum and secondly recharge a protecting gas, thereby improving the apparatus safety; simplify the structure of the furnace body such that components that need maintenance and repair can be disassembled quickly, thereby reducing manufacturing and maintenance costs; improve the operation accuracy and stability of the apparatus; and reduce the influence of heat convection on the stability of weighing signals in the open furnace.
An oxide crystal growth method without annealing. By performing weight compensation on a reaction material, introducing a flowing gas, increasing the proportion of oxygen content in a cooling process, providing a heating body in an adopted temperature field device, and optimizing process parameters, problems such as component deviation, cracking, and forming an oxygen vacancy in a crystal growth process can be inhibited to a certain extent.
The present disclosure provides an open Czochralski furnace for single crystal growth. The crystal growth apparatus may include a furnace chamber which includes a furnace body and a furnace cover. The furnace cover may be mounted on a top of the furnace body. The furnace cover may include a first through hole. The first through hole may be configured to place a temperature field. The crystal growth apparatus in the present disclosure can solve a problem that a traditional vacuum furnace needs to firstly pump a high vacuum and secondly recharge a protecting gas, thereby improving the apparatus safety; simplify the structure of the furnace body such that components that need maintenance and repair can be disassembled quickly, thereby reducing manufacturing and maintenance costs; improve the operation accuracy and stability of the apparatus; and reduce the influence of heat convection on the stability of weighing signals in the open furnace.
patents
