A method for forming a semiconductor structure, comprising: providing a structure to be processed, said structure comprising a functional structure and a buffer structure located on the functional structure, and the functional structure comprising a first functional layer; performing planarization on said structure, the planarization causing the buffer structure to be removed and exposing a surface of the first functional layer; and performing surface treatment on the surface of the first functional layer, so that the flatness of the surface of the first functional layer is within a preset range. Thus, the yield of the semiconductor structure is increased.
An optical projection module and a wearable electronic device. The optical projection module comprises: an optical lens having a light entry end and a light exit end; a display panel arranged corresponding to the light entry end and comprising a light-emitting surface, a normal direction of the light-emitting surface not being parallel to an optical axis direction of the optical lens; and an optical path redirection element configured to acquire an initial light signal emitted from the light-emitting surface, and redirect the initial light signal to form a redirected light signal propagating toward the light exit end. The overall size of the optical projection module is reduced, which in turn improves the wearing comfort and the light weight of the wearable electronic device.
A micro LED display detection device and detection method. The micro LED display detection device comprises a first object (2) which is provided with a first optical axis, and emits a test image; and a second object which is provided with a second optical axis, and receives and analyzes the test image to obtain optical parameters of the test image. High-precision automatic detection of important parameters of the first object (2) is realized, the problems of low efficiency and low test repeatability of manual detection are solved, and standardized measurement of the optical performance of a delivered AR light engine product is realized.
A micro-display pixel unit, a micro-display panel and an electronic device. The micro-display pixel unit comprises: a drive backplane; and a light-emitting structure located on one side of the drive backplane, wherein the light-emitting structure comprises at least two light-emitting mesas, the at least two light-emitting mesas being arranged at intervals in a vertical direction and being separately electrically connected to the drive backplane; each light-emitting mesa comprises a top surface away from the drive backplane and a bottom surface close to the drive backplane; and the area of the top surface of at least one of the at least two light-emitting mesas is greater than the area of the bottom surface, and when the contour of the bottom surface of each light-emitting mesa is vertically projected onto the top surface, the projection falls within the contour range of the top surface. The area of the top surface of at least one of the at least two light-emitting mesas is greater than the area of the bottom surface, and when the contour of the bottom surface of each light-emitting mesa is vertically projected onto the top surface, the projection falls within the contour range of the top surface, so that the light-extraction efficiency can be improved, thereby improving a display effect.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
5.
TESTING SYSTEM AND TESTING METHOD FOR DISPLAY PANEL
A testing system and testing method for a display panel. The testing system comprises: a driving signal generator (110), a photodetector (120, 220, 320), and a processing assembly (130). The driving signal generator (110) is electrically connected to a panel (100, 200, 300) to be tested, the driving signal generator (110) provides a light-emitting driving signal to said panel (100, 200, 300), and the light-emitting driving signal drives said panel (100, 200, 300) to perform picture refreshing. Said panel (100, 200, 300) which receives the light-emitting driving signal inputs light rays into the photodetector (120, 220, 320), the photodetector (120, 220, 320) receives the light rays generated by said panel (100, 200, 300) to generate a refresh signal, and the refresh signal reflects a change in the luminous intensity of said panel (100, 200, 300) over time. The photodetector (120, 220, 320) is electrically connected to the processing assembly (130), and the photodetector (120, 220, 320) outputs the refresh signal to the processing assembly (130). The processing assembly (130) receives the refresh signal, and obtains display parameters of said panel (100, 200, 300) on the basis of the refresh signal.
G09G 3/00 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
6.
METHOD AND SYSTEM FOR CORRECTING NONUNIFORMITY OF NEAR-EYE DISPLAY
A method for correcting nonuniformity of a near-eye display (NED) includes: obtaining a first plurality of images in response to a first test pattern being displayed by a display of the NED, each of the first plurality of images being obtained at a different location adjacent to an end of an optical path coupled to the display; extracting a distinguishing frequency component among the first plurality of images, the distinguishing frequency component being at least caused by stray light introduced by the optical path; and determining a correction scheme for correcting nonuniformity of the NED based on the distinguishing frequency component.
H04N 13/117 - Transformation of image signals corresponding to virtual viewpoints, e.g. spatial image interpolation the virtual viewpoint locations being selected by the viewers or determined by viewer tracking
H04N 13/139 - Format conversion, e.g. of frame-rate or size
H04N 13/15 - Processing image signals for colour aspects of image signals
7.
EPITAXIAL WAFER, METHOD FOR PREPARING THE SAME AND DISPLAY DEVICE
An epitaxial wafer, a method for preparing the same and a display device are provided. The epitaxial wafer includes an N-type doped layer, a functional well structure and a P-type doped structure sequentially arranged in a stacked manner. The functional well structure includes a light emitting substructure, and the light emitting substructure includes a redundant barrier layer. The redundant barrier layer is disposed between the N-type doped layer and the P-type doped structure. The redundant barrier layer has the function of blocking electrons, avoiding a high electron concentration in the functional well structure.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
H10H 20/815 - Bodies having stress relaxation structures, e.g. buffer layers
8.
LIGHT-EMITTING DIODE EPITAXIAL STRUCTURE, AND METHOD FOR FORMING THE SAME
A light-emitting diode epitaxial structure and a method for forming the same are provided. The light-emitting diode epitaxial structure includes: an N-type semiconductor structure, a quantum well light-emitting layer and a P-type semiconductor structure which are stacked. The quantum well light-emitting layer is disposed between the N-type semiconductor structure and the P-type semiconductor structure. The P-type semiconductor structure includes a P-type current spreading layer and a P-type confinement layer, and the P-type confinement layer is disposed between the quantum well light-emitting layer and the P-type current spreading layer. A material of the P-type current spreading layer has a first lattice constant, a material of the P-type confinement layer has a second lattice constant, and a mismatch between the first lattice constant and the second lattice constant is less than or equal to 1%.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/815 - Bodies having stress relaxation structures, e.g. buffer layers
H10H 20/816 - Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
H10H 20/84 - Coatings, e.g. passivation layers or antireflective coatings
9.
METHOD AND SYSTEM FOR CORRECTING NONUNIFORMITY OF NEAR-EYE DISPLAY
A method (400) for correcting nonuniformity of a near-eye display (NED) (110) includes: obtaining a first plurality of images in response to a first test pattern being displayed by a display of the NED, each of the first plurality of images being obtained at a different location adjacent to an end of an optical path coupled to the display (S402); extracting a distinguishing frequency component among the first plurality of images, the distinguishing frequency component being at least caused by stray light introduced by the optical path (S404); and determining a correction scheme for correcting nonuniformity of the NED based on the distinguishing frequency component (S406).
A micro-projection optical engine and an electronic device. The micro-projection optical engine comprises: a light combining assembly, which is provided with at least one light-entering surface and a light-exiting surface; a lens assembly, wherein the lens assembly and the light-exiting surface of the light combining assembly are fixedly arranged opposite each other; and at least one micro-display panel, wherein the micro-display panel comprises a display section, the display section of the at least one micro-display panel being arranged opposite the at least one light-entering surface of the light combining assembly; light emitted by the display section of the at least one micro-display panel can enter the light combining assembly through the light-entering surface and exit through the light-exiting surface.
An epitaxial wafer, a method for preparing the same and a display device are provided. The epitaxial wafer includes an N-type doped layer, a functional well structure and a P-type doped structure arranged in a stacked manner. The functional well structure is disposed between the N-type doped layer and the P-type doped structure, and the functional well structure includes a light emitting substructure and a transition substructure disposed between the light emitting substructure and the N-type doped layer. In the light emitting substructure, the functional well structure is a multiple quantum well structure, and a barrier layer in the multiple quantum well structure has a weak blocking effect on holes, which can increase a migration distance of holes, thereby increasing the number of quantum wells emitting light and improving the light emitting efficiency of the epitaxial wafer.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
12.
EPITAXIAL WAFER, METHOD FOR PREPARING THE SAME AND DISPLAY DEVICE
An epitaxial wafer, a method for preparing the same and a display device are provided. The epitaxial wafer includes an N-type doped layer, a functional well structure and a P-type doped structure arranged in a stacked manner. The functional well structure is disposed between the N-type doped layer and the P-type doped structure, and the functional well structure includes a light emitting substructure and a transition substructure disposed between the light emitting substructure and the N-type doped layer. In the light emitting substructure, the functional well structure is a multiple quantum well structure, and a barrier layer in the multiple quantum well structure has a weak blocking effect on holes, which can increase a migration distance of holes, thereby increasing the number of quantum wells emitting light and improving the light emitting efficiency of the epitaxial wafer.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
13.
MICRO-DISPLAY CHIP, MICRO-DISPLAY PANEL AND FORMING METHOD THEREFOR, AND NEAR-EYE DISPLAY DEVICE
A micro-display chip, a micro-display panel and a forming method therefor, and a near-eye display device, relating to the technical field of micro-display. The method for forming a micro-display panel comprises: providing a micro-display chip, wherein the micro-display chip comprises a light-emitting region and a non-light-emitting region surrounding the light-emitting region; forming a metal layer in the non-light-emitting region; forming a light absorption layer on the metal layer, wherein a plurality of coarse protrusions are arranged on the surface of the light absorption layer; and packaging the micro-display chip in a surrounding mode by using an outer frame, wherein the light-emitting region and the light absorption layer of the micro-display chip are exposed out of the outer frame. The light absorption layer is formed on the metal layer, the surface of the light absorption layer is provided with the uneven surfaces of the plurality of coarse protrusions, the surface area of the uneven surface of the light absorption layer is increased, and light emitted from the light-emitting region is reflected by the outside to reach the surface of the light absorption layer to generate diffuse reflection, thereby effectively reducing the re-reflection of full-band light, and improving the picture display quality.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A data transmission method for a microdisplay panel (10), a microdisplay system, a microdisplay panel, and a near-eye display device, relating to the technical field of microdisplay. The data transmission method for the microdisplay panel (10) comprises: in response to powering on the microdisplay panel (10) (S10); clearing data in preset storage regions (1011, 10212) of the microdisplay panel (10) (S11); and after the data is cleared, transmitting pixel grayscale data to the microdisplay panel (10) (S12). When the microdisplay panel (10) is powered on, the data in the preset storage regions (1011, 10212) is cleared to avoid the problem of a screen display abnormality caused by the occurrence of a random value in the preset storage regions (1011, 10212) after power-on, thereby improving the screen display quality.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
15.
BASE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE
A base structure and a method for manufacturing the base structure, and a semiconductor device are provided. The base structure includes a substrate and a Group III-V superlattice layer. The Group III-V superlattice layer includes a plurality of lattice stack layers stacked on the substrate. A lattice stack layer includes at least two semiconductor layers, and a semiconductor layer includes a first Group III component and a second Group III component. In a same lattice stack layer, a proportion of the first Group III component in a semiconductor layer away from the substrate is less than a proportion of the first Group III component in a semiconductor layer proximate to the substrate. The Group III-V superlattice layer can effectively achieve structural relaxation between the substrate and an epitaxial structure, reduce dislocation density in the epitaxial structure and improve a performance of a device manufactured on the epitaxial structure.
H10D 62/815 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wellsSemiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
H10D 62/00 - Semiconductor bodies, or regions thereof, of devices having potential barriers
H10D 62/824 - Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. Light from the micro multi-color LED device is emitted horizontally from each of the LED structures and reflected upward via some reflective structures. In some embodiments, each LED structure is connected to a pixel driver and/or a common electrode. The LED structures are bonded together through bonding layers. In some embodiments, planarization layers enclose each of the LED structures or the micro multi-color LED device. In some embodiments, one or more of reflective layers, refractive layers, micro-lenses, spacers, and reflective cup structures are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H10H 20/831 - Electrodes characterised by their shape
A light emitting structure array system with a micro-lens array structure includes a first light emitting mesa, which includes a light emitting layer, a bottom bonding layer, a top electrode layer, and an insulation layer. The bottom bonding layer is at a bottom of the light emitting layer and bonded with the semiconductor substrate. The top electrode layer covers the first light emitting mesa and electrically connected with a reflective cup surrounding the first light emitting mesa. The reflective cup is electrically connected with a semiconductor substrate. The insulation layer covers a side wall of the light emitting layer. The light emitting structure array system with a micro-lens array structure further includes a first micro-lens formed above the light emitting mesa. A central axis of the first micro-lens is coaxially aligned with a central axis of the first light emitting mesa.
A data loading method for a micro LED display panel. The method is applied to a micro LED display panel, which includes pixels and is configured with N memory bits. The method comprises the following steps: loading, into N memory bits, any N bits of data signal information from M bits of data signal information that is included in an n-th frame of data signal information, N being less than M, and after loading has been completed, a panel area scanning the N bits of data signal information in the N memory bits; and loading, into the N memory bits, at most N bits of unloaded data signal information, and after loading has been completed, the panel area scanning the unloaded data signal information in the N memory bits, and repeating this step until the panel area has scanned the M bits of data signal information. By means of the present invention, the loading problem caused by a reduction in the number of memory bits is solved in a time-division data loading manner.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
Disclosed in the present invention are a light-emitting diode epitaxial structure, a manufacturing method, and a chip. The light-emitting diode epitaxial structure comprises an N-type semiconductor stack structure, a P-type semiconductor stack structure, quantum well light-emitting layers, and a P-type waveguide layer which are stacked. The quantum well light-emitting layers are arranged between the N-type semiconductor stack structure and the P-type semiconductor stack structure. The P-type waveguide layer is arranged between the quantum well light-emitting layers and the P-type semiconductor stack structure, a P-type dopant and an N-type dopant are doped in the P-type waveguide layer, and in the P-type waveguide layer, the concentration of the P-type dopant is greater than that of the N-type dopant. Under the condition that the concentration of the P-type dopant is not reduced, the compensation effect between the N-type dopant and the P-type dopant is utilized to decrease the conductivity of the P-type waveguide layer, so that when a device employing the present invention is energized, lateral current spreading can be suppressed when a current passes through the P-type waveguide layer, avoiding light emission from the adjacent quantum well light-emitting layers, and reducing optical crosstalk.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
20.
RESET SIGNAL PROCESSING METHOD AND SYSTEM FOR MICRO-LED PANEL
A reset signal processing method for a Micro-LED panel, comprising the following steps: (S11) acquiring a reset input signal; (S21) upon detecting that the reset input signal is a falling edge, calculating a first number of acquisitions of the reset input signal at a low level; and (S31) when the first number of acquisitions is greater than or equal to an acquisition threshold, controlling a reset output signal to the low level and outputting the reset output signal, wherein the reset output signal is used for controlling to reset a reset component (13) of a Micro-LED panel.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H03K 3/013 - Modifications of generator to prevent operation by noise or interference
A micro LED display panel includes a micro LED array including a plurality of micro LEDs and a plurality of electrical connection structures disposed around the plurality of micro LEDs and electrically connected to the plurality of micro LEDs. A plurality of light propagation channels are formed between adjacent ones of the micro LEDs. Each light propagation channel includes at least one of a plurality of gaps defined between adjacent ones of the electrical connection structures. From a top view of the micro LED array, the light propagation channels are flexural.
A light-emitting diode epitaxial structure and a manufacturing method therefor. The light-emitting diode epitaxial structure comprises an N-type semiconductor stacking structure, a P-type semiconductor stacking structure, a quantum well light-emitting layer and an impurity block layer, wherein the quantum well light-emitting layer is arranged between the N-type semiconductor stacking structure and the P-type semiconductor stacking structure; and the impurity block layer is arranged between the P-type semiconductor stacking structure and the quantum well light-emitting layer, and the lattice constant of the impurity block layer is less than the lattice constant of the P-type semiconductor stacking structure. Therefore, an impurity block layer with a relatively small lattice constant is grown between a P-type semiconductor stacking structure and a quantum well light-emitting layer in the present invention, such that the diffusion of Mg atoms from the P-type semiconductor stacking structure can be effectively blocked, thereby improving the distribution of the Mg atoms in the quantum well light-emitting layer, and improving the reliability and stability of a device which uses the structure.
A micro LED display panel(100) includes a micro LED array) 110, 600, 700, 800, 900A,900B,900C, 1000, 1100) including a plurality of micro LEDs(200, 200a, 200b, 200c, 200d, 200',200a', 200b', 200c', 200d') and a plurality of electrical connection structures(230, 231,232, 232a, 232b, 232c) disposed around the plurality of micro LEDs(200, 200a, 200b, 200c, 200d, 200', 200a',200b', 200c', 200d') and electrically connected to the plurality of micro LEDs(200, 200a, 200b, 200c, 200d, 200', 200a',200b', 200c', 200d'). A plurality of light propagation channels(370,371,372) are formed between adjacent ones of the micro LEDs(200, 200a, 200b, 200c, 200d, 200',200a',200b', 200c', 200d'). Each light propagation channel(370,371,372) includes at least one of a plurality of gaps(270, 270a, 270b, 271, 271a, 271b, 271c, 272, 272a, 272b, 272c, 273, 273a, 273b) defined between adjacent ones of the electrical connection structures(230, 231, 232, 232a, 232b, 232c). From a top view of the micro LED array(110, 600, 700, 800, 900A,900B,900C, 1000, 1100), the light propagation channels(370,371,372) are flexural.
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
24.
METHOD AND SYSTEM FOR CORRECTING NONUNIFORMITY OF NEAR-EYE DISPLAY
A method for correcting nonuniformity of a near-eye display (110) (NED), including: generating and displaying a first plurality of test patterns for a display of the NED (S402); obtaining, in response to the first plurality of test patterns, a first plurality of images at an end of an optical path coupled to the display (S404); fitting a mapping relationship for each of display pixels of the display according to the first plurality of test patterns and the first plurality of images, the mapping relationship of a display pixel mapping the display pixel and a corresponding image pixel in each image of the first plurality of images (S406); and determining a correction scheme for correcting nonuniformity of the NED based on the mapping relationship of each of the display pixels (S408).
A method for correcting nonuniformity of a near-eye display (NED), including: generating and displaying a first plurality of test patterns for a display of the NED; obtaining, in response to the first plurality of test patterns, a first plurality of images at an end of an optical path coupled to the display; fitting a mapping relationship for each of display pixels of the display according to the first plurality of test patterns and the first plurality of images, the mapping relationship of a display pixel mapping the display pixel and a corresponding image pixel in each image of the first plurality of images; and determining a correction scheme for correcting nonuniformity of the NED based on the mapping relationship of each of the display pixels.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G06T 3/40 - Scaling of whole images or parts thereof, e.g. expanding or contracting
A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided in the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a photonic crystal structure array, which is formed in the mesa structure, thereby realizing higher directional light emission, simpler structure and lower cost. Furthermore, the re-growth layer is formed on at least one part of the sidewall of mesa structure, which decreases the non-radiation recombination at the sidewall surface of the mesa structure, improving the light emission efficiency and the image quality.
H10H 20/817 - Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/821 - Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
27.
LIGHT-EMITTING DIODE DISPLAY PANEL WITH MICRO LENS ARRAY
A light-emitting diode (LED) display panel includes a substrate, a driver circuit array on the substrate and including a plurality of pixel driver circuits arranged in an array, an LED array including a plurality of LED dies each being coupled to one of the pixel driver circuits, a micro lens array including a plurality of micro lenses each corresponding to and being arranged over at least one of the LED dies, and an optical spacer formed between the LED array and the micro lens array.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A method for correcting nonuniformity of a near-eye display (NED) having a first display and a second display, the method including: generating and displaying a test pattern for the first display and the second display; obtaining, in response to the test pattern, a first image at an end of a first optical path coupled to the first display and a second image at an end of a second optical path coupled to the second display; fusing the first image and the second image to generate a fusion image; and determining a correction scheme for correcting nonuniformity of the NED based on the fusion image.
A method for correcting nonuniformity of a near-eye display (NED) having a first display and a second display, the method including: generating and displaying a test pattern for the first display and the second display; obtaining, in response to the test pattern, a first image at an end of a first optical path coupled to the first display and a second image at an end of a second optical path coupled to the second display; fusing the first image and the second image to generate a fusion image; and determining a correction scheme for correcting nonuniformity of the NED based on the fusion image.
A micro-LED display panel includes a micro-LED display chip including a micro-LED array area and an IC (integrated circuit) backplane, wherein the micro-LED array area is provided on the IC backplane; an image light rotating element including a transmission lens assembly provided above the micro-LED display chip and including a transmission lens over the micro-LED array area; and a lens position rotating actuator configured to rotate the transmission lens about at least one preset axis, wherein the at least one preset axis is parallel to the micro-LED array area; and a holder provided on the micro-LED display chip and configured to support the transmission lens assembly.
A micro-LED display panel (100) includes a micro-LED display chip (110) including a micro-LED array area (111) and an IC (integrated circuit) backplane (112), wherein the micro-LED array area (111) is provided on the IC backplane (112); an image light rotating element (712) including a transmission lens assembly (150) provided above the micro-LED display chip (110) and including a transmission lens (154) over the micro-LED array area (111); and a lens position rotating actuator (160) configured to rotate the transmission lens (154) about at least one preset axis, wherein the at least one preset axis is parallel to the micro-LED array area (111); and a holder (130) provided on the micro-LED display chip (110) and configured to support the transmission lens assembly (150).
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
32.
OPTICAL MODULE WITH PROJECTION AND PHOTOGRAPHY FUNCTIONS
An optical module with projection and photography functions comprises an optical lens, a light-splitting prism, a self-luminous micro-display unit, and a photoelectric image sensing unit. The optical lens has a first end and a second end. The light-splitting prism is equipped with a first end surface coupled to the second end of the optical lens, a second end surface, and multiple side surfaces. The self-luminous micro-display unit is coupled to the second end surface and is configured to emit projection light. The photoelectric image sensing unit is coupled to one of the side surfaces and is configured to receive light to form a photographic image. The optical lens, light-splitting prism, and photoelectric image sensing unit together form a photographic light transmission path. The self-luminous micro-display unit, light-splitting prism, and optical lens form a projection light transmission path. This invention integrates the photographic and projection optical modules, thereby achieving a reduction in the volume of the optical module and providing multifunctional capabilities.
An adapter device for chip packaging test is disclosed in the present disclosure. The adapter device for chip packaging test includes: a connection plate comprising a plurality of packaging testing units. Each packaging testing unit includes: a plate slot for accommodating a micro chip, a signal transmission sheet coupled with the plate slot, a signal connector coupled with the plate slot, and a chip substrate. In some embodiments, the adapter device for chip packaging test further includes: an adapter plate coupled with the connection plate through an inter-plate connection region included in the adapter plate. A method for chip packaging testing includes bonding a plurality of the micro chips to the chip substrates of the connection plate, coupling the connection plate with the adapter plate, inspecting the plurality of micro chips, and identifying a faulty micro chip using the identification code.
A single pixel multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are horizontally formed as sub-pixels to combine light. In some embodiments, two or more light emitting layers are formed on a substrate with integrated circuits and the two or more light emitting layers are bonded together with bonding layers. In some embodiments, the two or more LED structures are formed by utilizing a respective top light emitting layer of the respective LED structure and by removing extra top light emitting layer(s) with the respective LED structure. In some embodiments, the up and down orientation of the P-type region and the N-type region within the first light emitting layer is different from the up and down orientation of the P-type region and the N-type region within the second light emitting layer.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
H10H 20/831 - Electrodes characterised by their shape
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
35.
ELECTROSTATIC DISCHARGE PROTECTION SYSTEM OF MICRO DEVICE
An electrostatic discharge (ESD) protection system of a micro device is disclosed. The ESD protection system comprises: a pixel driver circuit, electrically connected to at least one micro LED pixel for controlling the turning-on or off of the micro LED pixel, and a first ESD protective unit, electrically connected to a first level voltage (Vdd) and the second level voltage (Vcom). In some embodiments, the micro LED pixel is electrically connected to a second level voltage (Vcom). The ESD protection system can protect the micro LED pixel from being damaged by the electrostatic discharge. Various embodiments include an ESD protection system of a display panel with a micro-LED pixel array.
H10D 89/60 - Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
36.
SYSTEMS AND METHODS FOR MULTI-COLOR LED WITH STACKED BONDING STRUCTURES
A single pixel multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are horizontally formed as sub-pixels to combine light. In some embodiments, two or more light emitting layers are formed on a substrate with integrated circuits and the two or more light emitting layers are bonded together with bonding layers. In some embodiments, the two or more LED structures are formed by utilizing a respective top light emitting layer of the respective LED structure and by removing extra top light emitting layer(s) with the respective LED structure. In some embodiments, the up and down orientation of the P-type region and the N-type region within the first light emitting layer is different from the up and down orientation of the P-type region and the N-type region within the second light emitting layer.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
H10H 20/831 - Electrodes characterised by their shape
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
A micro display controlling system includes a data interface, a data decoder, a memory-write controller, a frame-memory controller including at least two frame memories, at least one color-display panel, a data processor including at least two data formatting processors, and a data output interface including at least two sub-output interfaces.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
38.
MICRO LED ELEMENT, MICRO LED DISPLAY PANEL AND DISPLAY DEVICE
A micro LED element (100, 200, 300, 400, 500, 620, 711) includes a mesa (110, 310, 510) including a first semiconductor layer (111, 311, 511), an intermediate layer (112, 312), and a second semiconductor layer (113, 313, 513) stacked from top down, wherein the mesa (110, 310, 510) is divided into two stages (110A, 110B; 310A, 310B) at a side of the intermediate layer (112, 312), and the intermediate layer (112, 312) includes: a light emitting layer (114, 314, 514); and a third semiconductor layer (115, 315, 515) disposed on a surface of the light emitting layer (114, 314, 514), wherein the third semiconductor layer (115, 315, 515) is exposed to the outside of the mesa (110, 310, 510) to have an exposed surface (116, 316, 516) relative to the mesa (110, 310, 510); and a Schottky metal layer (130, 330, 520, 630) disposed on the exposed surface (116, 316, 516), wherein the Schottky metal layer (130, 330, 520, 630) creates a depletion region (191, 391, 521) in the light emitting layer (114, 314, 514).
A micro LED display panel includes a mesa including a first semiconductor layer, a light emitting layer, and a second semiconductor layer that are stacked from top down; a passivation layer formed on a sidewall surface of the mesa; and a Schottky metal layer disposed adjacent to the passivation layer, wherein the Schottky metal layer creates a depletion region at least in the light emitting layer.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
40.
MICRO LED ELEMENT, MICRO LED DISPLAY PANEL AND DISPLAY DEVICE
A micro LED display panel includes a mesa including a first semiconductor layer, a light emitting layer, and a second semiconductor layer that are stacked from top down; a passivation layer formed on a sidewall surface of the mesa; and a Schottky metal layer disposed adjacent to the passivation layer, wherein the Schottky metal layer creates a depletion region at least in the light emitting layer.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
41.
MICRO LED ELEMENT, MICRO LED DISPLAY PANEL AND DISPLAY DEVICE
A micro LED element includes a mesa including a first semiconductor layer, an intermediate layer, and a second semiconductor layer stacked from top down, wherein the mesa is divided into two stages at a side of the intermediate layer, and the intermediate layer includes: a light emitting layer; and a third semiconductor layer disposed on a surface of the light emitting layer, wherein the third semiconductor layer is exposed to the outside of the mesa to have an exposed surface relative to the mesa; and a Schottky metal layer disposed on the exposed surface, wherein the Schottky metal layer creates a depletion region in the light emitting layer.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
42.
ELECTROSTATIC DISCHARGE PROTECTION SYSTEM OF A MICRO DEVICE
An electrostatic discharge (ESD) protection system of a micro device (500) comprises: a pixel driver circuit (01) and a first ESD protective unit (021). The pixel driver circuit (01) is electrically connected to at least one micro LED pixel (00) for controlling the turning-on or off of the micro LED pixel (00). The first ESD protective unit (021) is electrically connected to the micro LED pixel (00). The ESD protection system (500) can protect the micro LED pixel (00) from being damaged by the electrostatic discharge.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H10D 89/60 - Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is above the light emitting layer, and a bottom surface of the isolation structure is under the light emitting layer.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/10 - Integrated devices comprising at least one light-emitting semiconductor component covered by group
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
A micro LED includes a bonding layer provided at a bottom of the micro LED and two or more light emitting mesas provided on the bonding layer and disposed in a vertical direction from top to bottom, wherein the two or more light emitting mesas are electrically connected in series.
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
A micro LED includes a bonding layer provided at a bottom of the micro LED; a first N type semiconductor layer formed on the bonding layer and electrically connected to the bonding layer; a first light emitting layer formed on the first N type semiconductor layer; a P type semiconductor layer formed on the first light emitting layer; a second light emitting layer formed on the P type semiconductor layer; and a second N type semiconductor layer formed on the second light emitting layer; wherein the first N type semiconductor layer and the second N type semiconductor layer are electrically connected to a first electrode, and the P type semiconductor layer is electrically connected to a second electrode.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
A micro optical engine and an electronic device. The micro optical engine comprises a lens assembly (10) and at least one micro display panel (20). The lens assembly (10) comprises a lens housing (101), and a first light-guiding channel (103) disposed in the lens housing (101), the first light-guiding channel (103) comprising a projection end (102). The micro display panel (20) comprises a light-emitting chip (203), the lens housing (101) being connected to the micro display panel (20) on at least one of an opposite side and an adjacent side of the projection end (102), and light emitted by the light-emitting chip (203) entering the first light-guiding channel (103) and propagating through the projection end (102). Therefore, the invention enables products such as near-eye display devices and micro projectors to have small sizes, high imaging quality and improved portability.
A micro LED (110, 310, 510) includes a bonding layer (111, 311, 511) provided at a bottom of the micro LED (110, 310, 510) and two or more light emitting mesas (112, 113, 312, 313, 512, 513) provided on the bonding layer (111, 311, 511) and disposed in a vertical direction from top to bottom, wherein the two or more light emitting mesas (112, 113, 312, 313, 512, 513) are electrically connected in series.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A micro LED (300) includes a bonding layer (340) provided at a bottom of the micro LED (300); a first N type semiconductor layer (311) formed on the bonding layer (340) and electrically connected to the bonding layer (340); a first light emitting layer (321) formed on the first N type semiconductor layer (311); a P type semiconductor layer (330) formed on the first light emitting layer (321); a second light emitting layer (322) formed on the P type semiconductor layer (330); and a second N type semiconductor layer (312) formed on the second light emitting layer (322); wherein the first N type semiconductor layer (311) and the second N type semiconductor layer (312) are electrically connected to a first electrode, and the P type semiconductor layer (330) is electrically connected to a second electrode.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
A micro LED includes a bonding layer provided at a bottom of the micro LED; and two or more light emitting mesas provided on the bonding layer and disposed in a vertical direction from top to bottom, wherein the two or more light emitting mesas are electrically connected in parallel.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
51.
MICRO LED, MICRO LED DISPLAY PANEL AND EPITAXIAL STRUCTURE
A micro LED includes a bonding layer provided at a bottom of the micro LED; a first P type semiconductor layer formed on the bonding layer and electrically connected to the bonding layer; a first light emitting layer formed on the first P type semiconductor layer; a N type semiconductor layer formed on the first light emitting layer; a second light emitting layer formed on the N type semiconductor layer; and a second P type semiconductor layer formed on the second light emitting layer; wherein the first P type semiconductor layer and the second P type semiconductor layer are electrically connected to a first electrode, and the N type semiconductor layer is electrically connected to a second electrode.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
An optical module with a micro display panel, comprising an optical waveguide plate (10), an optical engine (20), and a mount (30), wherein the optical waveguide plate (10) has a developing area (11) and a fixed area (12) located on one side of the developing area (11); the optical device (20) comprises a lens assembly (21) and a micro display panel assembly (22), and light rays emitted by the micro display panel assembly (22) can emerge through the lens assembly (21); the mount (30) has a first mounting groove (31) and a second mounting groove (32) in communication with each other, the fixed area (12) of the optical waveguide plate (10) is mounted in the first mounting groove (31), the lens assembly (21) of the optical device (20) is mounted in the second mounting groove (32), and the central axis of the lens assembly (21) intersects with a plane where the optical waveguide plate (10) is located; and light rays emitted by the optical device (20) can irradiate the fixed area (12) of the optical waveguide plate (10), and are displayed in the developing area (11) of the optical waveguide plate (10). The mount (30) of the optical module can effectively fix the optical waveguide plate (10) and the optical device (20) relatively, so that light rays emitted by the optical module can be effectively transmitted to the optical waveguide plate (10).
A micro-display full-color optical device, comprising: a lens assembly (10), a light-combining prism (20), and at least two micro-display panels (30), wherein the light-combining prism (20) has a light exit surface (21) and at least two light entry surfaces (22, 22a, 22b, 22c), the light exit surface (21) of the light-combining prism (20) being aligned to the lens assembly (10); light emitted from the light exit surface (21) can emerge through the lens assembly (10); the at least two micro-display panels (30) can emit light of at least two different colors, and each micro-display panel (30) comprises a display section (31), a connector section (32) and a connecting wire (33), the connecting wire (33) having one end electrically connected to the display section (31), and the other end electrically connected to the connector section (32); at least two display sections (31) of the at least two micro-display panels (30) are arranged opposite at least two light entry surfaces (22, 22a, 22b, 22c) of the light-combining prism (20), and the light emitted from the at least two micro-display panels (30) is combined by the light-combining prism (20) and then emerges through the light entry surface (21); and at least two connector sections (32) of the at least two micro-display panels (30) are stacked, such that the size of the micro-display full-color optical device can be reduced.
A micro display panel, comprising a circuit board (20), a display chip (10) and a stiffening plate (30), wherein the circuit board (20) comprises a display segment (201); the display chip (10) comprises a light-emitting chip (11), and the light-emitting chip (11) is electrically connected to the display segment (201); and the display segment (201) and the light-emitting chip (11) are arranged on the stiffening plate (30). Thus, by means of combining the micro LED display chip (10) with the circuit board (20), the micro display panel has a small volume and a light weight, can be applied in the fields of near-eye display AR/VR, micro projection, head-up display, 3D printing, sports optical instruments and light-field display, and is convenient to carry. The provided stiffening plate (30) can support the display segment (201) of the circuit board (20) and the display chip (10), and can also perform heat dissipation to avoid an extremely high temperature of the micro display panel in an operation state and prevent influence on the display effect of the micro display panel.
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
A micro LED (110, 510, 610, 711) includes a bonding layer (111, 511, 611) provided at a bottom of the micro LED (110,510,610,711); and two or more light emitting mesas (112, 113, 512, 513, 612, 613) provided on the bonding layer (111, 511, 611) and disposed in a vertical direction from top to bottom, wherein the two or more light emitting mesas (112, 113, 512, 513, 612, 613) are electrically connected in parallel.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
56.
MICRO LED, MICRO LED DISPLAY PANEL AND EPITAXIAL STRUCTURE
A micro LED (300) includes a bonding layer (210) provided at a bottom of the micro LED; a first P type semiconductor layer (311) formed on the bonding layer (210) and electrically connected to the bonding layer (210); a first light emitting layer (321) formed on the first P type semiconductor layer (311); a N type semiconductor layer (330) formed on the first light emitting layer (321); a second light emitting layer (322) formed on the N type semiconductor layer (330); and a second P type semiconductor layer (312) formed on the second light emitting layer (322); wherein the first P type semiconductor layer (311) and the second P type semiconductor layer (312) are electrically connected to a first electrode (351), and the N type semiconductor layer (330) is electrically connected to a second electrode (352).
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
57.
MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME
A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer. The micro-LED chip further includes a metal layer formed on a portion of the light emitting layer that extends from the second type conductive layer.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/10 - Integrated devices comprising at least one light-emitting semiconductor component covered by group
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
58.
MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME
A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer, at least one part of the light emitting layer being formed between adjacent micro-LEDs. the micro-LED chip further comprises a metal layer formed on the light emitting layer between the adjacent micro-LEDs.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/10 - Integrated devices comprising at least one light-emitting semiconductor component covered by group
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
A micro-LED display panel (600) including a micro-LED array layer (690) is provided. The micro-LED display panel (600) includes a micro-LED array (610) and a bonding nano-structure layer. The bonding nano-structure layer includes a DBR dielectric layer (661) formed at the bottom of the micro-LED array (610). The DBR dielectric layer (661) includes multiple openings, and multiple bonding nano-structures (640) are formed therein. Multiple nano-mirrors (680) are formed on top of multiple bonding nano-structures(640), respectively. The micro-LED display panel (600) further includes an integrated circuit backplane (670) that includes multiple top pads (671). The bonding nano-structures (640) of the micro-LED array layer (690) can be bonded with the top pads (671) of the integrated circuit backplane (670) without being aligned with each top pad (671), thereby simplifying the manufacturing process, decreasing the processing difficulty, reducing the high alignment requirement, and reducing the processing cost.
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A micro-LED display panel (100) including a micro-LED array layer (190) is provided. The micro-LED array layer (190) includes a micro-LED array (110) and a bonding nano-structure layer. The micro-LED array (110) includes multiple first type epitaxial structures, a first type epitaxial sub-layer, a light emitting layer (113), and a second type epitaxial layer (112) from bottom up. The doping concentration of the first type epitaxial sub-layer may be lower than that of the first type epitaxial structures. The bonding nano-structure layer includes multiple bonding nano-structures (140) that are formed at the bottom of the micro-LED array (110). The micro-LED display panel (100) further includes an integrated circuit (IC) backplane (170) that includes multiple top pads (171). The bonding nano-structures (140) can be bonded with the top pads (171) without being aligned with each top pad (171), thereby simplifying the manufacturing process, decreasing the processing difficulty, reducing the high alignment requirement, and reducing the processing cost.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A micro-LED display panel (100) including a micro-LED array layer (190) is provided. The micro-LED array layer (190) includes a micro-LED array (110) and a bonding nano-structure layer. The bonding nano-structure layer includes multiple bonding nano-structures (140) that are formed at the bottom of the micro-LED array (110). The bonding nano-structures (140) may be randomly or orderly distributed. The micro-LED display panel (100) further includes an integrated circuit backplane (170) that includes multiple top pads (171). The bonding nano-structures (140) of the micro-LED array layer (190) can be bonded with the top pads (171) of the integrated circuit backplane (170) without being aligned with each top pad (171), thereby simplifying the manufacturing process, decreasing the processing difficulty, reducing the high alignment requirement, and reducing the processing cost.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A micro-LED display panel (2100) including a micro-LED array layer (2190) is provided. The micro-LED array layer (2190) includes a micro-LED array (2110) and a bonding nano-structure layer. The micro-LED array (2110) includes a first type epitaxial layer (2111), a light emitting layer (2113), and a second type epitaxial layer (2112) from bottom up. The second type epitaxial layer (2112) includes a top dome microlens array (2112b). The bonding nano-structure layer includes multiple bonding nano-structures (2140) that are formed at the bottom of the micro-LED array (2110). The micro-LED display panel (2100) further includes an integrated circuit backplane (2170) that includes multiple top pads (2171). The bonding nano-structures (2140) can be bonded with the top pads (2171) without being aligned with each top pad (2171), thereby simplifying the manufacturing process, decreasing the processing difficulty, reducing the high alignment requirement, and reducing the processing cost.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
63.
ELECTROSTATIC DISCHARGE PROTECTION SYSTEM OF A MICRO DEVICE
An electrostatic discharge (ESD) protection system of a micro device is disclosed in the present disclosure. The ESD protection system comprises: a pixel driver circuit, electrically connected to at least one micro LED pixel for controlling the turning-on or off of the micro LED pixel, wherein the micro LED pixel is electrically connected to a second level voltage (Vcom): a first ESD clamp, electrically connected to a first level voltage (Vdd) and the second level voltage (Vcom); and, a second ESD clamp, electrically connected to a third level voltage (Vss) and the second level voltage (Vcom). The present disclosure can protect the micro LED pixel from being damaged by the electrostatic discharge. Various embodiments include an ESD protection system of a display panel with a micro-LED pixel array.
An electrostatic discharge (ESD) protection system of a micro device is disclosed in the present disclosure. The ESD protection system includes: a pixel driver circuit electrically connected to at least one micro LED pixel for controlling the turning-on or off of the micro LED pixel; and a first ESD protective unit configured in an external circuit outside the pixel driver circuit. The first ESD protective unit comprises at least a unidirectional transient voltage suppressor. The cathode of the unidirectional transient voltage suppressor is connected to a first level voltage, and the anode of the unidirectional transient voltage suppressor is connected to the second level voltage. The micro LED pixel is connected to the second level voltage. The present disclosure can protect the micro LED pixel from being damaged by the electrostatic discharge. Various embodiments include an ESD protection system of a display panel with a micro-LED pixel array.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
A micro LED display panel（150）is provided. The micro LED display panel（150）may include a micro LED array area including a micro LED array. The micro LED display panel（150）may further include an IC backplane（140） bonded with the micro LED array. Each micro LED of the micro LED array may include a micro mesa structure（110）. The micro mesa structure（110）may include a first type epitaxial layer（111）, a light emitting layer（112）, a second type epitaxial layer（113）, and a plurality of sidewalls. At least one sidewall of the micro mesa structure does not pass through the light emitting layer（112）; and at least one sidewall of the micro mesa structure（110） passes through the light emitting layer（112）. A top transparent conductive layer is continuously formed on the entire top surface of the micro LED array.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A micro LED display panel is provided. The micro LED display panel (150) may include a micro LED array area including a micro LED array. The micro LED display panel (150) may further include an IC backplane (140) bonded with the micro LED array. Each micro LED of the micro LED array may include a micro mesa structure (110). The micro mesa structure (110) may include a first type epitaxial layer (111), a light emitting layer (112), a second type epitaxial layer (113), and a plurality of sidewalls. At least one sidewall of the micro mesa structure (110) does not pass through the light emitting layer (112); and at least one sidewall of the micro mesa structure (110) passes through the light emitting layer (112).
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A micro LED display panel（150） may include a micro LED array area including a micro LED array. The micro LED display panel（150） may further include an IC backplane（140） bonded with the micro LED array. Each micro LED of the micro LED array may include a micro mesa structure（110）. The micro mesa structure（110）may include a first type epitaxial layer（111）, a light emitting layer（112）, and a second type epitaxial layer（113）from bottom up. A part of sidewalls of the micro mesa structure（110）does not pass through the light emitting layer（112）and the other part of the sidewalls of the micro mesa structure（110） passes through the light emitting layer（112）. The ratio of the number of sidewalls not passing through the light emitting layer （112）to the number of the sidewalls passing through the light emitting layer（112） is 1: 1.
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
A micro LED display panel (150) is provided. The micro LED display panel (150) may include a micro LED array area including a micro LED array. The micro LED display panel (150) may further include an IC backplane (140) bonded with the micro LED array. Each micro LED of the micro LED array may include a micro mesa structure (110). The micro mesa structure (110) may include a first type epitaxial layer (111), a light emitting layer (112), a second type epitaxial layer (113), and a plurality of sidewalls. A first set of the plurality of sidewalls of the micro mesa structure (110) does not partition the light emitting layer (112); and a second set of the plurality of sidewalls of the micro mesa structure (110) partitions the light emitting layer (112). The ratio of the number of the first set of the plurality of sidewalls to the number of the second set of the plurality of sidewalls is 3: 1.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A micro LED display panel (150) is provided. The micro LED display panel (150) may include a micro LED array area including a micro LED array and an IC backplane (140) bonded with the micro LED array. Each micro LED of the micro LED array may include a micro mesa structure (110) that includes a first type epitaxial layer (111), a light emitting layer (112), and a second type epitaxial layer (113) from bottom up. A part of sidewalls of the micro mesa structure (110) does not pass through the light emitting layer (112) and the other part of the sidewalls of the micro mesa structure (110) passes through the light emitting layer (112). The ratio of the number of sidewalls not passing through the light emitting layer (112) to the number of the sidewalls passing through the light emitting layer (112) for each micro LED forming the micro LED array may be 3:1.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
70.
MICRO LED DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME
A micro LED display panel and a method for manufacturing the micro LED display panel are provided by the present disclosure. The method includes: forming a micro LED array on a side of a driver backplane, and the micro LED array including a plurality of micro LED units; forming a pixel isolation structure between adjacent micro LED units, a height of the pixel isolation structure being higher than heights of the micro LED units, and a portion of the pixel isolation structure higher than a micro LED unit forming a filling space above the micro LED unit; and filling the filling space with a wavelength conversion structure, at least a portion of the wavelength conversion structure being arranged on a propagation path of light emitted from the micro LED unit, and the wavelength conversion structure being capable of changing a wavelength of light emitted from the micro LED unit to change a color of light emitted from the micro LED unit.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/54 - Encapsulations having a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
A micro LED display panel (150) is provided. The micro LED display panel (150) may comprise a micro LED array area including a micro LED array and an IC backplane (140) bonded with the micro LED array. Each micro LED (S101, S102, S103, S104) of the micro LED array may comprise a micro mesa structure (110) that includes a first type epitaxial layer (111), a light emitting layer (112), and a second type epitaxial layer (113) from bottom up. A part of sidewalls of the micro mesa structure (110) does not pass through the light emitting layer (112) and the other part of the sidewalls of the micro mesa structure (110) passes through the light emitting layer (112). The ratio of the number of sidewalls not passing through the light emitting layer (112) to the number of the sidewalls passing through the light emitting layer (112) for each micro LED (S101, S102, S103, S104) forming the micro LED array may be 1: 3, 1: 1, 3: 1, or any combination thereof.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
72.
MICRO LED DISPLAY PANEL, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE
The present disclosure provides a micro LED display panel and a method for manufacturing the same. The method includes forming a micro LED array on a side of a drive backplane, wherein the micro LED array includes micro LED units; forming pixel isolation structures above the micro LED array on a side away from the drive backplane, and, the pixel isolation structures form filling spaces above light emitting regions of corresponding micro LED units; and accommodating a wavelength conversion structure into the filling spaces, and, the wavelength conversion structure is at least partially disposed in a propagation path of light emitted from the micro LED units, and is able to change a wavelength of the light emitted from the micro LED units to change a color of the light emitted from the micro LED units.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A micro LED display panel includes a mesa array including a plurality of mesa structures; a top transparent conductive layer formed on a top surface of the mesa array; a reflective isolation layer filled in a space between the adjacent mesa structures, a bottom of the reflective isolation layer being lower than a bottom of the mesa structure; and an integrated circuit (IC) backplane formed at a bottom of the reflective isolation layer.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
A micro LED display panel includes a micro LED array area which includes a plurality of micro LED structures; a bonding layer formed between adjacent micro LED structures and at a bottom of the adjacent micro LED structures; and a substrate formed at a bottom of the bonding layer, wherein the bonding layer is bonded with the substrate.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A micro display module (200) is provided. The micro display module (200) includes an X-cube prism (210) configured to combine two or more monochrome images into a polychromatic image; and at least two micro-LED display panels (220) configured to provide the two or more monochrome images for the X-cube prism (210), wherein each of the micro-LED display panels (220) is adhered to a corresponding one of surfaces of the X-cube prism (210).
A micro LED display panel includes a micro LED array area including a plurality of micro LED structures. Each of the micro LED structures includes: a first type epitaxial layer; a light emitting layer formed on the first type epitaxial layer; and a second type epitaxial layer formed on the light emitting layer. The second type epitaxial layer includes: a micro lens structure and a bottom structure, the micro lens structure and the bottom structure being an integrative structure.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
A micro LED display panel includes a micro LED array area including a plurality of micro LED structures, wherein the plurality of micro LED structures includes a first group micro LED structures and a second group micro LED structures; a plurality of isolation contacts corresponding to the first group micro LED structures, one of the isolation contacts being formed at a bottom of each of first micro LED structure in the first group micro LED structures; and a plurality of conductive bottom contacts corresponding to the second group micro LED structures, one of the conductive bottom contacts being formed at a bottom of each of second micro LED structures in the second group micro LED structures.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A micro-nano optical element (1), an optical projection system, a MicroLED display panel, and an electronic device. The micro-nano optical element (1) comprises at least two diffraction grating structures. Each diffraction grating structure comprises at least two diffraction gratings (112, 122) and at least one incident light substrate (121), the diffraction gratings (112, 122) being spaced apart from each other, and the incident light substrate (121) being disposed between the two adjacent diffraction gratings (112, 122). The optical projection system comprises a light-emitting assembly (2) and a micro-nano optical element (1), the light-emitting assembly (2) comprising at least one light-emitting element (21), and the micro-nano optical element (1) being disposed on a light propagation path of the light-emitting element (21) and being disposed corresponding to the light-emitting element (21). Hence, when passing through the micro-nano optical element (1), light emitted by the light-emitting element (21) is collimated and deflected. The purpose of high-efficient and low-cost projection is achieved, and the product weight and size of the optical projection system are reduced.
A micro LED display panel (100) includes a micro LED array area including a plurality of micro LED structures (200). Each of the micro LED structures (200) includes: a first type epitaxial layer (210); a light emitting layer (220) formed on the first type epitaxial layer (210); and a second type epitaxial layer (230) formed on the light emitting layer (220). The second type epitaxial layer (230) includes: a micro lens structure (231) and a bottom structure (232), the micro lens structure (231) and the bottom structure (232) being an integrative structure.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A micro LED display panel includes a mesa array including a plurality of mesa structures; a top transparent conductive layer formed on a top surface of the mesa array; a reflective isolation layer filled in a space between the adjacent mesa structures, a bottom of the reflective isolation layer being lower than a bottom of the mesa structure; and an integrated circuit (IC) backplane formed at a bottom of the reflective isolation layer.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/26 - Materials of the light emitting region
A micro LED display panel (100, 300, 500) includes a micro LED array area (510) which includes a plurality of micro LED structures (200, 400, 511); a bonding layer (110, 310) formed between adjacent micro LED structures (200, 400, 511) and at a bottom of the adjacent micro LED structures (200, 400, 511); and a substrate (120, 320, 520) formed at a bottom of the bonding layer (110, 310), wherein the bonding layer (110, 310) is bonded with the substrate (120, 320, 520).
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A micro LED display panel (100, 300) includes a micro LED array area including a plurality of micro LED structures (200, 400), wherein the plurality of micro LED structures (200, 400) includes a first group micro LED structures (200A, 400A) and a second group micro LED structures (200B, 400B); a plurality of isolation contacts (290, 490) corresponding to the first group micro LED structures (200A), one of the isolation contacts (290, 490) being formed at a bottom of each of first micro LED structure in the first group micro LED structures (200A, 400A); and a plurality of conductive bottom contacts (270, 470) corresponding to the second group micro LED structures (200B, 400B), one of the conductive bottom contacts (270, 470) being formed at a bottom of each of second micro LED structures in the second group micro LED structures (200B, 400B).
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A micro-LED display panel (220) includes a micro-LED chip (2204) provided at a first end of a flexible printed circuit (FPC) board (2203) and configured to provide a monochrome image, and a connector (2205) provided at a second end of the FPC board (2203) and configured to communicate with the micro-LED chip (2204) by the FPC board (2203).
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
A micro display module includes an X-cube prism configured to combine two or more monochrome images into a polychromatic image; and at least two micro-LED (light emitting diode) display panels configured to provide the two or more monochrome images for the X-cube prism, wherein each of the micro-LED display panels is adhered to a corresponding one of surfaces of the X-cube prism.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided in the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a re-growth layer. In some embodiments, the mesa structure comprises a light-emitting layer. In some embodiments, the re-growth layer is grown at least on the sidewall of the light-emitting layer. The re-growth layer is not parallel to the extending direction of the light-emitting layer.
H10H 20/821 - Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
H10H 29/37 - Pixel-defining structures, e.g. banks between the LEDs
86.
A MICRO LED PANEL WITH RE-GROWTH LAYER AND MANUFACTURING METHOD THEREOF
A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a re-growth layer (04). The re-growth layer (04) is grown on at least part of the sidewall of the first type epitaxial layer (01) and on the whole sidewall of the light emitting layer (03), thereby decreasing the non-radiation recombination on the sidewall of the mesa structure and improving the light emitting efficiency.
H10H 20/821 - Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided according to the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a re-growth layer. In some embodiments, the mesa structure comprises a first type epitaxial layer, a light emitting layer and a second epitaxial layer. In some embodiments, the re-growth layer is grown on at least part of the sidewall of the first type epitaxial layer, the whole sidewall of the light emitting layer and at least part of the sidewall of the second type epitaxial layer. The present disclosure can decrease the non-radiation recombination at the sidewall of the mesa structure and improve the light emitting efficiency of the micro LED structure.
H10H 20/821 - Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/817 - Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided by the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a photonic crystal structure array. The photonic crystal structure array formed through the mesa structure from top to bottom, thereby realizing higher directional light emission, simpler structure and lower cost.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
A micro LED (100) includes: a bonding layer (120); a P-N structure (130) formed on the bonding layer (120), wherein the P-N structure (130) includes a first type semiconductor layer (131), a light emitting layer (132) formed on the first type semiconductor layer (131), and a second type semiconductor layer (133) formed on the light emitting layer (132); and a top conductive layer (140) formed on the P-N structure (130), wherein a top surface of the micro LED (100) is a curved surface.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
A micro LED includes: a bonding layer; a P-N structure formed on the bonding layer, wherein the P-N structure includes a first type semiconductor layer, a light emitting layer formed on the first type semiconductor layer, and a second type semiconductor layer formed on the light emitting layer; and a top conductive layer formed on the P-N structure, wherein a top surface of the micro LED is a curved surface.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
91.
SYSTEM AND METHOD OF MICRO-LED DISPLAY WITH THREE-DIMENSIONAL MICRO NANO WAVEGUIDE STRUCTURE
A micro-LED display system (200,500) is provided. The micro-LED display system (200,500) includes a micro-LED display chip (210) comprising multiple micro-LED pixel units (211,212,213,214,215,511,512,513,514) and a 3D micro nano optical structure (220,320,420,520). The 3D micro nano optical structure (220,320,420,520) is configured to project multiple light beams (231,232,233,234,235,531,532,533,534) emitted from multiple micro-LED pixel units (211,212,213,214,215,511,512,513,514) to a top surface of the 3D micro nano optical structure (220,320,420,520). A direction and a width of each light beam (231,232,233,234,235,531,532,533,534) are controlled by the 3D micro nano optical structure (220,320,420,520), respectively. Each light beam (231,232,233,234,235,531,532,533,534) is projected out from the 3D micro nano optical structure (220,320,420,520) with a fixed width toward a designated direction. The 3D micro nano optical structure (220,320,420,520) includes multiple paths, where each light beam (231,232,233,234,235,531,532,533,534) emitted from a corresponding micro-LED pixel unit (211,212,213,214,215,511,512,513,514) propagates along a corresponding path within the 3D micro nano optical structure (220,320,420,520).
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
92.
MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME
A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by an edge of the second type conductive layer.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
A Micro LED driving circuit, a driving system, a display panel and a pixel driving method. The Micro LED driving circuit comprises: a first MOS transistor (10), a gate electrode of which is used for accessing an enable signal (EN); a first inverter (40), one end of which is electrically connected to the gate electrode of the first MOS transistor (10), and the other end of which is electrically connected to a substrate of the first MOS transistor (10); a second MOS transistor (20), a source electrode of the first MOS transistor (10) and a source electrode of the second MOS transistor (20) being electrically connected to the same voltage source (VDD), and a gate electrode of the second MOS transistor (20) being used for accessing a control signal (SF); and a current mirror (30), a drain electrode of the first MOS transistor (10) and a drain electrode of the second MOS transistor (20) being both electrically connected to the current mirror (30), and the current mirror (30) having an input interface for accessing an external current (Lin) and an output interface for electrically connecting to an external light-emitting unit (50).
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
A micro-LED display panel, comprising a driving backplane, a micro-LED array structure and a reflecting layer, wherein the micro-LED array structure is arranged on one side of the driving backplane, and the micro-LED array structure comprises a plurality of light-emitting platform surface structures, each of which comprises a first epitaxial layer, a light-emitting layer and a second epitaxial layer stacked in sequence from top to bottom; and the reflecting layer is located on the surface of the second epitaxial layer facing away from the first epitaxial layer, and light emitted by the light-emitting layer passes through the reflecting layer and can be reflected by the reflecting layer back to the light-emitting platform surface structure. Thus, the present application is provided with the reflecting layer, such that received light of the light-emitting layer can be reflected back to the corresponding light-emitting platform surface structure, thereby increasing the brightness and the luminous efficiency of the micro-LED display panel.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
95.
MICRO LED DRIVER CIRCUIT, DRIVING SYSTEM, DISPLAY PANEL AND PIXEL DRIVING METHOD
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
96.
MANUFACTURING METHOD FOR DISPLAY PANEL, MICROLED CONNECTION STRUCTURE, DRIVING BACKPLANE, AND DISPLAY PANEL
Disclosed in the present invention are a manufacturing method for a display panel, a MicroLED connection structure, a driving backplane, and a display panel. The manufacturing method for the display panel comprises: providing a growth substrate having an epitaxial layer; forming an insulating layer on one side of a second epitaxial layer; exposing and etching a preset position in the insulating layer corresponding to the second epitaxial layer to form a communication hole; filling the communication hole with a third conductive layer; providing a backplane substrate having a driving circuit layer; exposing and etching the position in one side of the driving circuit layer corresponding to the communication hole, so as to form a fourth communication hole, and filling the fourth communication hole with a fourth conductive layer; bonding the driving circuit layer to the insulating layer, so that the third conductive layer is electrically connected to the fourth conductive layer; stripping the growth substrate; and exposing and etching the epitaxial layer, so as to form a light-emitting mesa structure. Thus, the present invention can effectively solve the problems such as poor contact or misaligned contact between a MicroLED array structure and a driving backplane due to non-uniform bonding caused by metal thermal expansion during bonding in existing eutectic bonding technologies.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A micro-LED display panel and a preparation method. The present panel comprises a driving backplane, a micro-LED array structure and a first barrier layer, wherein the micro-LED array structure is arranged on one side of the driving backplane, the micro-LED array structure comprises a plurality of light-emitting mesa structures, each light-emitting mesa structure comprising a first epitaxial layer, a light-emitting layer and a second epitaxial layer which are stacked in sequence from top to bottom; and the first barrier layer is arranged on a side wall of each light-emitting mesa structure, at least part of the first barrier layer being located on the propagation path of horizontal light emitted by the light-emitting layer. When the micro-LED array structure is turned on, the first barrier layer on the side wall of a light-emitting mesa structure can effectively block lateral emission of light from the light-emitting layer to an adjacent light-emitting mesa structure, avoiding crosstalk caused by the adjacent light-emitting mesa structure being turned on. Thus, the present invention effectively ameliorates the problem of optical crosstalk, improves panel brightness and light efficiency, and enables the alignment area of a reflective window to be effectively increased, improving the IR yield.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
98.
MICRO LED DISPLAY PANEL AND MANUFACTURING METHOD THEREFOR
A micro LED display panel and a manufacturing method therefor. The panel comprises a driving backplane (200), a micro LED array structure (100), and a reflecting layer (107); the micro LED array structure is arranged on one side of the driving backplane, and the micro LED array structure comprises a plurality of light-emitting mesa structures (101); each light-emitting mesa structure comprises a first epitaxial layer (1011), a light-emitting layer (1012), and a second epitaxial layer (1013) which are sequentially stacked from top to bottom, the reflecting layer is located on the surface of the second epitaxial layer distant from the first epitaxial layer, and light emitted by the light-emitting layer can be reflected back to the light-emitting mesa structure by the reflecting layer after passing through the reflecting layer. Therefore, by providing the reflecting layer, the light received from the light-emitting layer can be reflected back to the corresponding light-emitting mesa structure, thereby improving the brightness and the lighting effect of the micro LED display panel.
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
99.
MICRO LED DISPLAY PANEL AND MANUFACTUR METHOD THEREOF
A micro LED display panel includes a micro LED array including micro LEDs, and each micro LED includes at least two light emitting mesas vertically stacked from bottom to top; and conductive layers disposed on a top and a bottom of each light emitting mesa. A top conductive layer is disposed on the top of the light emitting mesa and a bottom conductive layer is disposed on the bottom of the light emitting mesa. An electrical connection structure includes at least one top electrical connection structure electrically connected to the top conductive layer and at least one bottom electrical connection structure electrically connected to one bottom conductive layer. A plurality of connection protrusions extending towards the light emitting mesas are provided on a side of the electrical connection structure adjacent to the light emitting mesas, and each of the connection protrusions is electrically connected to one conductive layer.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
100.
MICROLED CHIP HAVING LIGHT-ABSORBING LAYER AND PREPARATION METHOD
Disclosed in the present invention are a MicroLED chip having a light-absorbing layer and a preparation method. The MicroLED chip comprises a display area, the display area comprising a MicroLED array structure, and the MicroLED array structure comprising a plurality of MicroLED structures and being used for emitting light rays; a peripheral area, the peripheral area being located around the display area; and a peripheral light-absorbing layer, the peripheral light-absorbing layer being located in the peripheral area, and the peripheral light-absorbing layer being used for absorbing the light rays which are emitted by the MicroLED array structure and reflected to the peripheral area by an external object. When the MicroLED structures in the display area of the MicroLED chip emit light rays and the light rays irradiate an optical waveguide on a near-eye display device, the light rays are reflected back to the peripheral area by the optical waveguide, and the peripheral light-absorbing layer in the peripheral area absorbs the light rays reflected back by the optical waveguide, so that the reflectivity of light across all wavelength bands can be significantly reduced, thus solving the problem of ghosting caused by light rays emitted by the MicroLED structures in the display area of the MicroLED chip being reflected back to the peripheral area by the optical waveguide and then reflected back to the optical waveguide, and enhancing the display effect on the near-eye display devices.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
