H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 35/02 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details
H01L 35/28 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only
2.
ELECTRODE STRUCTURE FOR MAGNESIUM SILICIDE-BASED BULK MATERIALS TO PREVENT ELEMENTAL MIGRATION FOR LONG TERM RELIABILITY
H01L 35/20 - Selection of the material for the legs of the junction using inorganic compositions comprising metals only
H01L 35/22 - Selection of the material for the legs of the junction using inorganic compositions comprising compounds containing boron, carbon, oxygen, or nitrogen
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
4.
OXIDATION AND SUBLIMATION PREVENTION FOR THERMOELECTRIC DEVICES
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
5.
MECHANICAL ADVANTAGE IN LOW TEMPERATURE BOND TO A SUBSTRATE IN A THERMOELECTRIC PACKAGE
A thermoelectric system is disclosed which comprises a hot-side substrate comprising a first dielectric material, a cold-side substrate comprising a second dielectric material, a plurality of thermoelectric element pairs positioned intermediate the cold-side substrate and the hot-side substrate, and a bonding material circuit. The bonding material circuit comprises the thermoelectric element pairs directly bonded by an electrically conductive bonding material to the cold-side and/or the hot- side substrate. Methods of making a thermoelectric system are also disclosed.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof
H01L 35/02 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details
Under one aspect, a structure includes a tetrahedrite substrate; a first contact metal layer disposed over and in direct contact with the tetrahedrite substrate; and a second contact metal layer disposed over the first contact metal layer. A thermoelectric device can include such a structure. Under another aspect, a method includes providing a tetrahedrite substrate; disposing a first contact metal layer over and in direct contact with the tetrahedrite substrate; and disposing a second contact metal layer over the first contact metal layer. A method of making a thermoelectric device can include such a method.
A thermoelectric generating unit includes a hot-side heat exchanger (HHX) including one or more discrete channels and substantially flat first and second cold-side plates. A first plurality of thermoelectric devices are between the first cold-side plate and a first side of the HHX; and a second plurality of thermoelectric devices can be between the second cold-side plate and a second side of the HHX. Fasteners can extend between the first and second cold- side plates at locations outside of the HHX channel(s). The fasteners can be disposed within gaps between the thermoelectric devices of the first plurality and within gaps between the thermoelectric devices of the second plurality. The fasteners can compress the first plurality of thermoelectric devices between the first cold-side plate and the first side of the HHX and can compress the second plurality of thermoelectric devices between the second cold-side plate and the second side of the HHX.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
8.
THERMOELECTRIC GENERATORS FOR RECOVERING WASTE HEAT.
A thermoelectric generator includes a tapered inlet manifold including first and second non- parallel sides; first and second pluralities of outlet manifolds; and thermoelectric generating units (TGUs) each including a hot-side heat exchanger (HHX) with inlet and outlet; a cold- side heat exchanger (CHX); and thermoelectric devices arranged between the HHX and CHX. The inlets of some of the HHXs receive exhaust gas from the first side of the tapered inlet manifold and the outlets of those HHXs are coupled to outlet manifolds of the first plurality of outlet manifolds. The inlets of other of the HHXs receive exhaust gas from the second side of the tapered inlet manifold and the outlets of those HHXs are coupled to outlet manifolds of the second plurality of outlet manifolds. The thermoelectric devices can generate electricity responsive to a temperature differential between the exhaust gas and the CHXs.
Thermoelectric structures include a flexible substrate; a plurality of conductive shunts; and a plurality of thermoelectric legs that are in thermal and electrical communication with the thermoelectric legs via thermal and electrical paths. In some embodiments, the paths are through apertures in the flexible substrate, and the flexible substrate can be substantially out of the thermal and electrical paths. Some embodiments include a circuit board coupled to the flexible substrate, and a bend in the flexible substrate can be disposed between the plurality of conductive shunts and the circuit board. In some embodiments, a plurality of perforations are defined through the flexible substrate and can be configured to rupture responsive to a temperature condition that otherwise would damage one or more of the thermal and electrical paths, said rupture inhibiting such damage. Other embodiments, and methods, are provided.
H01L 35/02 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
10.
ULTRA-LONG SILICON NANOSTRUCTURES, AND METHODS OF FORMING AND TRANSFERRING THE SAME
Under one aspect, a plurality of silicon nanostructures is provided. Each of the silicon nanostructures includes a length and a cross-section, the cross-section being substantially constant along the length, the length being at least 100 microns. Under another aspect, a method of making nanostructures is provided that includes providing a silicon wafer including a thickness and first and second surfaces separated from one another by the thickness; forming a patterned layer of metal on the first surface of the silicon wafer; generating a current through the thickness of the silicon wafer, the metal oxidizing the silicon wafer in a region beneath the patterned layer of the metal; and exposing the silicon wafer to an etchant in the presence of the current, the etchant removing the oxidized region of the silicon wafer so as to define a plurality of nanostructures. Methods of transferring nanowires also are provided.
A method includes preparing a thermoelectric material including p-type or n-type material and first and second caps including transition metal(s). A powder precursor of the first cap can be loaded into a sintering die, punches assembled thereto, and a pre-load applied to form a first pre-pressed structure including a first flat surface. A punch can be removed, a powder precursor of the p-type or n-type material loaded onto that surface, the punch assembled to the die, and a second pre-load applied to form a second pre-pressed structure including a second substantially flat surface.
Silicon-based thermoelectric materials including isoelectronic impurities, thermoelectric devices based on such materials, and methods of making and using same are provided. According to one embodiment, a thermoelectric material includes silicon and one or more isoelectronic impurity atoms selected from the group consisting of carbon, tin, and lead disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of the one or more isoelectronic impurity atoms in the silicon. In one example, the thermoelectric material also includes germanium atoms disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of germanium in the silicon. Each of the one or more isoelectronic impurity atoms and the germanium atoms can independently substitute for a silicon atom or can be disposed within an interstice of the silicon.
Thermoelectric solid material and method thereof. The thermoelectric solid material includes a plurality of nanowires. Each nanowire of the plurality of nanowires corresponds to an aspect ratio (e.g., a ratio of a length of a nanowire to a diameter of the nanowire) equal to or larger than 10, and each nanowire of the plurality of nanowires is chemically bonded to one or more other nanowires at at least two locations of the each nanowire.
H01L 35/00 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
14.
STRUCTURES AND METHODS FOR MULTI-LEG PACKAGE THERMOELECTRIC DEVICES
Thermoelectric device with a multi-leg package and method thereof. The thermoelectric device includes a first ceramic base structure including a first surface and a second surface, and a first plurality of pads including one or more first materials thermally and electrically conductive. The first plurality of pads are attached to the first surface. Additionally, the thermoelectric device includes a second plurality of pads including the one or more first materials. The second plurality of pads are attached to the second surface and arranged in a mirror image with the first plurality of pads. Moreover, the thermoelectric device includes a plurality of thermoelectric legs attached to the first plurality of pads respectively. Each pad of the first plurality of pads is attached to at least two first thermoelectric legs of the plurality of thermoelectric legs.
Array of nanoholes and method for making the same. The array of nanoholes includes a plurality of nanoholes. Each of the plurality of nanoholes corresponds to a first end and a second end, and the first end and the second end are separated by a first distance of at least 100 μιτι. Each of the plurality of nanoholes corresponds to a cross-sectional area associated with a distance across, and the distance across ranges from 5 nm to 500 nm. Each of the plurality of nanoholes is separated from at least another nanohole selected from the plurality of nanoholes by a semiconductor material associated with a sidewall thickness, and the sidewall thickness ranges from 5 nm to 500 nm.
Apparatus and method for generating electricity. The apparatus includes one or more first components configured to extract heat from at least a first fluid flow at a first temperature to one or more devices configured to convert thermal energy to electric energy. The first fluid flow is in a first direction. Additionally, the apparatus includes one or more second components configured to transfer heat from the one or more devices to at least a second fluid flow at a second temperature. The second temperature is lower than the first temperature, and the second fluid flow is in a second direction. Each first part of the first fluid flow corresponds to a first shortest distance to the one or more devices, and the first shortest distance is less than half the square root of the total free flow area for a corresponding first cross-section of the first fluid flow.
A thermoelectric device and methods thereof. The thermoelectric device includes nanowires, a contact layer, and a shunt. Each of the nanowires includes a first end and a second end. The contact layer electrically couples the nanowires through at least the first end of each of the nanowires. The shunt is electrically coupled to the contact layer. All of the nanowires are substantially parallel to each other. A first contact resistivity between the first end and the contact layer ranges from10-13 Ω-m2 to 10-7 Ω-m2. A first work function between the first end and the contact layer is less than 0.8 electron volts. The contact layer is associated with a first thermal resistance ranging from 10-2 K/W to 1010 K/W.
A structure and method for at least one array of nanowires partially embedded in a matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first segment associated with a first end, a second segment associated with a second end, and a third segment between the first segment and the second segment. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. The third segment is substantially surrounded by the one or more fill materials. The first segment protrudes from the one or more fill materials.
A matrix with at least one embedded array of nanowires and method thereof. The matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first end and a second end. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. Each of the one or more fill materials is associated with a thermal conductivity less than 50 Watts per meter per degree Kelvin. And, the matrix is associated with at least a sublimation temperature and a melting temperature, the sublimation temperature and the melting temperature each being above 350 °C.
H01L 35/28 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only
20.
ARRAYS OF LONG NANOSTRUCTURES IN SEMICONDUCTOR MATERIALS AND METHOD THEREOF
An array of nanowires and method thereof. The array of nanowires includes a plurality of nanowires. The plurality of nanowires includes a plurality of first ends and a plurality of second ends respectively. For each of the plurality of nanowires, a corresponding first end selected from the plurality of first ends and a corresponding second end selected from the plurality of second ends are separated by a distance of at least 200 μm. All nanowires of the plurality of nanowires are substantially parallel to each other.
A uniwafer device for thermoelectric applications includes one or more first thermoelectric elements and one or more second thermoelectric elements comprising respectively a first and second patterned portion of a substrate material. Each first/second thermoelectric element is configured to be functionalized as an n-/p-type semiconductor with a thermoelectric figure of merit ZT greater than 0.2. The second patterned portion is separated from the first patterned portion by an intermediate region functionalized partially for thermal isolation and/or partially for electric interconnecting. The one or more first thermoelectric elements and the one or more second thermoelectric elements are spatially configured to allow formation of a first contact region and a second contact region respectively connecting to each of the one or more first thermoelectric elements and/or each of the one or more second thermoelectric elements to form a continuous electric circuit.
H01L 27/16 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including thermomagnetic components
H01L 35/04 - Structural details of the junction; Connections of leads
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