A solar module and a method of manufacturing the same. The solar module has a plurality of solar cell arrays, a cross-connector and an encapsulation. Each of the solar cell arrays includes solar cell substrates with contact structures and an interconnection structure that includes a plurality of round or rounded wires. Some of the wires have a flatter cross-section in a flattened region than the same wires in a non-flattened region adjacent to the flattened region and/or than other wires. The flattened region is located at and/or near an edge of a terminal solar cell substrate adjacent to a portion of the contacting surface of a rear side of the solar cell substrate. At least two strings of solar cell arrays are arranged side by side and interconnected by means of the cross-connector.
The invention relates to a solar cell (1) comprising a semiconductor substrate (2) with a back-side contact-connection (3) and/or a front-side contact-connection (4), wherein at least one contact-connection (3, 4) comprises at least one busbar (5) which completely or partially consists of a first metal, and a plurality of contact fingers (6) which extend transversely with respect to the busbar (5), are arranged next to one another and completely or partially consist of a second metal different than the first metal, wherein the contact fingers (6) make electrical contact with the busbar (5) at connecting regions (7), and wherein the connecting region (7) of each contact finger (6) that is connected to the busbar (5) is materially integrally shaped with the contact finger (6) and is widened relative to a linking piece region (8) of the contact finger (6).
The invention relates to a method for manufacturing a thin-film solar cell (1), such as a perovskite solar cell (2) for example, and to a thin-film solar cell (1) which can be manufactured in a corresponding manner. The method has at least the following steps: forming a first conductive layer (5), forming insulation layer regions (9) from an electrically insulating material on first sub-regions (7) of the first conductive layer (5), forming front contacts (11) from a second electrically conductive material on the insulation layer regions (9), forming a thin-film solar cell layer (15) at least on second sub-regions (13) of the first conductive layer (5), said second sub-regions being arranged so as to laterally adjoin the first sub-regions (7) of the first conductive layer (5), and forming a second conductive layer (23) from a third electrically conductive material over the front contacts (11) and over the thin-film solar solar layer (15).
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/046 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
A solar cell (1) and a method for producing said solar cell are described. The solar cell comprises: an absorber layer (3) made of crystalline silicon, a front-side layer stack (5) at least comprising a silicon-oxide-containing front-side passivation layer (13) and a silicon carbide layer (15), a rear-side layer stack (7) at least comprising a silicon-oxide-containing rear-side passivation layer (19) and an emitter layer (21) made of silicon, a front-side contacting means (9) having a metal grid (27) having a plurality of elongate metal fingers (29), and a rear-side contacting means (11). The front-side passivation layer directly adjoins a front-side surface (17) of the absorber layer. The rear-side passivation layer directly adjoins a rear-side surface (23) of the absorber layer. The absorber layer and the silicon carbide layer are doped with the same doping type, or the silicon carbide layer (15) is intrinsic. The absorber layer and the emitter layer are doped with opposite doping types. The front-side contacting means electrically contacts the silicon carbide layer (15), and the metal grid (27) of the front-side contacting means (9) directly adjoins the silicon carbide layer (15). The rear-side contacting means (11) electrically contacts the emitter layer (21).
H01L 31/0747 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
6.
SOLAR MODULE WITH THREE-TERMINAL TANDEM SOLAR CELLS
The invention relates to a solar module (19) and a solar installation (37) made of multiple solar modules. The solar module has multiple 3TT solar cells (11), which are wired together in order to form at least one string (21), and at least two current input connections (27) at a current input of the solar module and/or at least two current output connections (29) at a current output of the solar module. Each 3TT solar cell has a stack comprising a top cell (3) and a bottom cell (5) arranged under the top cell, and each 3TT solar cell has a top contact (13), a bottom contact (15), and a central tap contact (17) as terminal contacts. A first current input connection (27') of the current input connections (27) is at least connected to one of the terminal contacts of a first 3TT solar cell (11') lying closest to the current input, and a second current input connection (27") of the current input connections (27) is at least connected to one of the terminal contacts of a second 3TT solar cell adjoining the first 3TT solar cell, and/or a first current output connection (29') of the current output connections is at least connected to one of the terminal contacts of a final 3TT solar cell (11") lying closest to the current output, and a second current output connection (29") of the current output connections is at least connected to one of the terminal contacts of a penultimate 3TT solar cell adjoining the final 3TT solar cell. The aforementioned wiring allows, among others, a substantial prevention of string end losses as well as an advantageous integration of bypass diodes (33, 35).
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/044 - PV modules or arrays of single PV cells including bypass diodes
H02S 40/34 - Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
7.
METHOD FOR APPLYING A SOLAR CELL LAMINATION ONTO A FLAT ELEMENT WHICH IS CURVED ONCE OR MULTIPLE TIMES
The invention relates to a method for applying a solar cell lamination (1) onto a flat element (2) that is curved once or multiple times, having the following steps: a) providing the flat element (2); b) applying multiple layer components (3, 4, 5), which are designed to form the solar cell lamination (1), onto a surface (8) of the flat element (2); c) applying a heat distribution pad (9), which has a form-flexible state, onto the flat element (2) from an upper face (10) equipped with the layer components (3, 4, 5) or a flat element (2) lower face (11) facing away from the upper face (10); and d) laminating the layer components (3, 4, 5) onto the flat element (2), wherein pressure is first applied to a granular filler (12) of the heat distribution pad (9) such that the heat distribution pad (9) assumes and maintains a surface shape (13) that is designed to complement the flat element (2) upper face (10) or lower face (11) applied onto the heat distribution pad. Thermal energy which produces a bonded connection between the layer components (3, 4, 5) and the flat element (2) is then transferred to the layer components (3, 4, 5) and the flat element (2) by means of the heat distribution pad (9). The invention additionally relates to a laminating system (22).
The invention relates to a solar panel (1) and a method for manufacturing same. The solar panel has a plurality of solar cell arrays (3), a cross connector (37) and an encapsulation (39). Each of the solar cell arrays has solar cell substrates (5) having contact structures (13), and an interconnection structure (7) comprising a plurality of round wires (21, 23, 25). Some of the wires (25) have, in a flattened region (27), a flatter cross-section than the same wires (25) in a non-flattened region (29) adjoining the flattened region (27) and/or than others of the wires (23). The flattened region (27) is arranged at and/or close to an edge (31) of an end solar cell substrate (6) so as to adjoin a portion of the contacting surface of a rear face of the solar cell substrate. At least two strings (17) of solar cell arrays (3) are arranged next to one another and are interconnected by means of the cross connector (37). The cross connector (37) overlaps the wires (25) of the respective end solar cell substrates (6) of each of the two strings (17) in the flattened region (27) and directly contacts the wires (25) there. The encapsulation (39) surrounds the solar cell arrays (3) and the cross connector (37) so as to encapsulate both.
A description is given of a solar module (1) having an energy converter (2) for converting light (3) into electrical or thermal energy, and having a layer (4) of natural material. The layer (4) of natural material has a layer thickness of between 1 μm und 2 mm and, inter alia, can impart an aesthetically pleasing appearance to the solar module (1).
(d) configuration of the charge carrier selective contact from a thin interface oxide 107 and an amorphous, partially crystalline or polycrystalline layer applied thereto, mainly consisting of silicon, either p (106) or n doped (201)
The charge carrier selective contact made up of layers 107 and 106 or 201, respectively, ensures excellent surface passivation of the crystalline silicon absorber 108, as well as selective extraction of a charge carrier type from the latter over the entire surface. Thus, a vertical current flow is achieved, so that lateral transverse conductivity is not required in every sub-cell. The formation of a tunnel contact to the adjacent layer may be achieved by high doping of the layers 106 and 201. The thickness and/or the doping of the layers 106 and 201 may be used to match the generation currents in the individual sub-cells. The temperature stability of layers 107, 106 or 201, respectively, allows the application of subsequent manufacturing steps with temperatures >400° C.
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0747 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
11.
METHOD FOR PRODUCING A SILICON-BASED POROUS ELECTRODE FOR A BATTERY, IN PARTICULAR A LITHIUM-ION BATTERY
The invention relates to a method for producing an electrode (1), preferably an anode, for a battery, preferably a lithium-ion battery. The method comprises: providing a metal substrate (3), for example in the form of a copper film; depositing a metal adhesion-promoting layer (7) on a surface (5) of the metal substrate (3); depositing a preferably p-type doped silicon layer (11) on the adhesion-promoting layer (7); making the silicon layer (11) porous via chemical etching, preferably electro-chemical etching, preferably to form a meso-porous structure with a porosity of 60 - 90%. The generated layer sequence can be simply and cost-effectively produced, and can provide a high gravimetric proportion of active material.
A tandem solar cell structure is described, having the following features: (a) a monolithic structure having at least two different absorbers (104, 108) made from different materials for photovoltaic energy conversion, (b) an absorber (108) consisting of crystalline silicon, (c) a charge-carrier-selective contact on that side of the silicon absorber (108) which is directed to the adjoining absorber (104), (d) a structure of the charge-carrier-selective contact made from a thin interface oxide 107 and an amorphous, semi-crystalline or polycrystalline layer which consists mainly of silicon, is either p-doped (106) or n-doped (201), and is applied to said contact. The charge-carrier-selective contact constructed from the layers 107 and 106 or 201 ensures excellent surface passivation of the crystalline silicon absorber 108 and the selective extraction of a charge carrier type from the latter over the entire surface. A vertical current flow is therefore achieved, with the result that lateral transverse conductivity is not required in each sub-cell. High doping of the layer 106 or 201 may form a tunnel contact with respect to the adjoining layer. The thickness and/or doping of the layer 106 or 201 can be used to adjust the generation currents in the individual sub-cells. The temperature stability of the layers 107, 106 or 201 makes it possible to use subsequent production steps at temperatures of ᡶ 400°C.
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
13.
SOLAR CELL AND A METHOD FOR PRODUCING A SOLAR CELL WITH OXIDISED INTERMEDIATE REGIONS BETWEEN POLYSILICON CONTACTS
The invention relates to a method for producing a solar cell (1), comprising the steps of: (a) providing a silicon substrate (3); (b) producing a boundary surface dielectric layer (5) on a surface of the silicon substrate (3); (c) depositing a silicon layer (7) consisting of amorphous or polycrystalline silicon onto said boundary surface dielectric layer (5), wherein the silicon layer (7) comprises laterally adjoining p-type doped regions (9) and n-type doped regions (11); (d) oxidising the silicon layer (7) in a locally delimited manner in intermediate regions (19) between adjoining p-type doped regions (9) and n-type doped regions (11); and (e) producing p-contacts (31) in contact with the p-type doped regions (9) of the silicon layer (7), and n-contacts (33) in contact with the n-type doped regions (11) of the silicon layer (7). Said locally-delimited oxidation allows the adjoining p-type doped regions (9) and n-type doped regions (11) to be electrically separated from one another, while simultaneously obtaining a good degree of passivation.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
The present invention relates to a solar cell (1) comprising a substrate (2) of p-type silicon or n-type silicon, wherein the substrate (2) comprises - a front side (2a) the surface of which is at least partially covered with at least one passivation layer (3) and - a back side (2b), wherein the back side (2b) of the substrate (2) is at least partially covered with a conductive polymer layer (4) and wherein at least one of the following conditions a) and b) is fulfilled: a) the conductive polymer layer (4) is at least partially in direct contact with the surface of the p-type or n-type silicon; b) the conductive polymer layer (4) comprises a cationic conductive polymer and a polymeric anion in a weight ratio cationic conductive polymer : polymeric anion of greater than 0.4. The present invention also relates to a process for the preparation of a solar cell, to a solar cell obtainable by this process and to a solar module.
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
The present invention relates to a solar cell (1) comprising a substrate (2) of p-type silicon or n-type silicon, wherein the substrate (2) comprises - a front side (2a) the surface of which is at least partially covered with at least one passivation layer (3) and - a back side (2b), wherein - the back side (2b) of the substrate (2) is at least partially covered with a passivation layer (4) having a thickness sufficient to allow a transport of holes through it, and - the passivationlayer (4) on the backside 2b) of the substrate (2) is at least partially cov- ered with a conductive polymer layer (5). The present invention also relates to a process for the preparation of a solar cell,to a solar cell obtainable by this process and to a solar module.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0747 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
The invention relates to a method for producing a silicon substrate (1) for the production of a solar cell, wherein the method comprises the following steps: providing an absorber layer (10) having a high-quality silicon layer (7), which has a high minority charge carrier lifetime of more than 2 μs, for example, and a layer thickness of less than 40 μs, for example, and attaching a carrier layer (12) onto the absorber layer, wherein the carrier layer has a low-quality polycrystalline silicon layer (11), which has a low minority charge carrier lifetime of less than 2 μs, for example, and a layer thickness of preferably more than 80 μs. The low-quality polycrystalline silicon layer (11) can be deposited from a gas phase, similarly to a Siemens process, wherein high deposition rates together with very low contaminants are possible. The produced silicon substrate (1) has sufficiently good electronic properties in the absorber layer thereof to be able to produce a solar cell having high efficiency therefrom. The carrier layer having the low-quality polycrystalline silicon layer is used mainly for the mechanical stabilization of the silicon substrate, such that the silicon substrate can be processed further into a finished solar cell similarly to a traditional silicon wafer. No ingot needs to be crystallized and then sawed into pieces in the production of the silicon substrate (1), whereby considerable costs can be saved.
The invention relates to a method and a device (1) for laminating objects to be encapsulated, in particular for laminating solar cells (15) to form solar modules (3). In a housing (5) of a laminator, the solar cells (15) can be embedded in EVA (ethylene vinyl acetate) and heated to above 120°C on a heating plate (9), wherein the solar cells are pressed to each other by means of a pressure membrane (19) by producing a vacuum. UV light (31) is directed from a lighting device (29) to the EVA (13) through an opening (25). Observations showed that fluorescence-active centers (43), which can be excited by means of said UV light (31), arise during the cross-linking of the EVA. Fluorescent light (45) emitted thereupon can be detected by a detecting apparatus (37) and can be used in deriving information about a cross-linking state of the EVA. In order to make the method insensitive to a local reflectivity of a sample, the reflectivity can additionally be measured by means of a supplemental light source that emits light in the fluorescence range of the EVA and used to calibrate the fluorescence measurement results. The cross-linking state of the EVA can thereby be determined in situ or, alternatively, after the solar module (3) has been completed.
B32B 17/10 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
B32B 37/06 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
B32B 37/10 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using direct action of vacuum or fluid pressure
G01N 21/00 - Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
G01N 21/33 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
The invention relates to a method for metallizing and connecting solar cell substrates (1) and to a photovoltaic module (100) made of several metallized solar cells (20) that are electrically connected to one another. According to the invention, a solar cell substrate (1), in which second metal layers (2a, 2b) forming electrical metal contacts are optionally provided, is attached to a carrier substrate (4), on the surface of which at least one first metal layer (3) is formed in a suitable pattern. By localized irradiation of the metal layer (2, 3) with laser radiation (5, 6) through the solar cell substrate (1) or the carrier substrate (4), energy is introduced such that the metal layer (2, 3) is heated by absorbed laser radiation (4, 5) for an irreversible bonding to the adjacent surface of the solar cell substrate (1). By the laser bonding of the metal layer (3) on the carrier substrate (4) to the solar cell substrate (1), solar cells can be connected to form a photovoltaic module, wherein conventional soldering of adjacent solar cells via metal bands is no longer required. Non-solderable, cost-effective, in particular silver-free metal layers (2a, 2b) can thus be used for contacting the solar cell substrates (1) of the solar cells (20).
The invention relates to a method for forming thin semiconductor substrates for producing solar cells, wherein alternately low-macroporous layers (33, 37) and layers (35, 39) etched clear can be designed by electrochemical etching in a provided semiconductor substrate (1). The layers (35, 39) etched clear separate adjoining macroporous layers (33, 37), such that said layers are preferably designed to be self-supporting. An edge region (3) of the semiconductor substrate (1), which surrounds the macroporous layers (33, 37) at least partially, is left unetched and is thus used for the mechanical stabilization of the enclosed, low-macroporous layers (33, 37) connected thereto. The multi-layer stack yielded in this way can then be subjected in a joint fluid method stop collectively to further processing steps, for example coated with a passivating oxide. Thereafter, the macroporous layers can be successively separated from the stabilizing edge region (3) of the semiconductor substrate, wherein a mechanical connection between the macroporous layer (33) and the non-porous edge region (3) is interrupted. Before the respectively uppermost layer is torn off, unilaterally acting processes can be employed. Using few process steps, in this way a plurality of thin semiconductor layer substrates in the form of macroporous layers (33, 37) can be formed, including good surface passivation and a reflection-reducing surface texture.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
A concept for a highly efficient solar cell, especially on the basis of high-quality crystalline silicon, as well as a method for producing such a solar cell are disclosed. In the solar cell (1), a contact structure (3) is formed using a layered stack arrangement that comprises a first layer (19) made of an electrically insulating material, a second layer (21) made of a semiconductor material, and a third layer (22) made of an electrically conductive material. The first (dielectric) layer is disposed between the substrate (17) and the second (semiconducting) layer (21) and is designed in such a way that a significant degree of charge carrier tunneling can occur between the substrate (17) and the second layer (21) through the first layer (19). The semiconductor material of the solar cell substrate and the semiconductor material of the second layer have different electrical properties as a result of different band structures such that the electron/hole selectivity of the tunneling process within the contact structure can be influenced, thus allowing the recombination losses caused by the contact structure to be significantly reduced.
H01L 31/062 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the metal-insulator-semiconductor type
21.
METHOD FOR FORMING THIN SEMICONDUCTOR LAYER SUBSTRATES AND METHOD FOR PRODUCING A SEMICONDUCTOR ELEMENT, IN PARTICULAR A SOLAR CELL COMPRISING, USING SAID TYPE OF SEMICONDUCTOR LAYER SUBSTRATE
The invention relates to a method for forming thin semiconductor layer substrates, wherein low porous layers (33, 37) and highly porous layers (35, 39) are formed in an alternating manner in a semiconductor substrate (1) by electrochemical etching. The thus obtained multi-layer stack can subsequently be subjected, in its totality, to additional treatment steps. For example, a passivation dielectric layer (45) can be formed on the entire surface of the low porous layers (33, 37) and the highly porous layers (35, 39). Subsequently, the low porous layers can be successively separated from each other in a mechanical manner, the highly porous layers arranged therebetween acting as a desired rupture point. It is also possible to form, in a few steps, a plurality of thin semiconductor layer substrates in the form of low porous layers (33, 37) and to obtain a good surface passivation and a reflection-reducing surface texture. The thus produced semiconductor layer substrates can be used, for example, for producing semiconductor elements, for example thin solar cells.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
METHOD FOR PRODUCING A SEMICONDUCTOR ELEMENT, IN PARTICULAR A SOLAR CELL, BASED ON A SEMICONDUCTOR THIN LAYER HAVING A DIRECT SEMICONDUCTOR OR GERMANIUM
The invention relates to a method for producing a solar cell based on a semiconductor thin layer (5) made of germanium or a direct semiconductor. Said method comprises the following steps: a semiconductor substrate (1) made of germanium or a direct semiconductor is provided; a porous layer (3) is formed on a surface of the semiconductor substrate (1); a semiconductor thin layer (5) is deposited on the porous layer (3); and the semiconductor thin layer (5) is separated from the semiconductor substrate (1), said porous layer (3) acting as a predetermined breaking point. Said porous layer (3) is formed by currentless chemical etching of the semiconductor substrate (1). The production method is significantly simplified due to the abandonment of traditionally used anodic etching and the replacement thereof with currentless chemical etching.
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
23.
METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, HAVING A LOCALLY OPEN DIELECTRIC LAYER AND CORRESPONDING SEMICONDUCTOR COMPONENT
The invention relates to a method for producing a semiconductor component (100) and a corresponding semiconductor component. The production method comprises the following steps: providing a silicon substrate (1); forming a first layer (3) made of amorphous silicon on a surface of the silicon substrate (1); forming a second layer (5) made of a dielectric on the first layer (3); and locally removing the second layer (5) in ablation areas (9) by irradiating the silicon substrate (1) and the layers (3, 5) located thereon with laser light (7). The laser light (7) is absorbed mainly in the amorphous silicon layer (3), wherein vaporization of amorphous silicon causes ablation of the dielectric layer (5) lying above the amorphous silicon. However, the amorphous silicon layer (3) is not completely removed. A residual layer remains and is used to reliably form an electrical contact with the silicon substrate (1).
B23K 26/18 - Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
B23K 26/40 - Removing material taking account of the properties of the material involved
H01L 31/20 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor material
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
H01L 31/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
24.
METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, BASED ON A SEMICONDUCTOR THIN FILM HAVING A DIRECT SEMICONDUCTOR MATERIAL
The invention relates to a method for producing a semiconductor component, in particular a solar cell, based on a semiconductor thin film. The method comprises the following steps: providing a semiconductor substrate (1), wherein the semiconductor substrate (1) comprises a material having a direct semiconductor; forming a porous film (3) on a surface of the semiconductor substrate (1) by electrochemically etching the semiconductor substrate (1) in an etching solution (7); depositing a semiconductor thin film (5) on the porous film (3); and separating the semiconductor thin film (5) from the semiconductor substrate (1), wherein the porous film (3) is used as a predetermined breaking point. In this way, a porous film can be produced in a semiconductor substrate, wherein the porous film enables the semiconductor thin film deposited thereon to be subsequently separated and the semiconductor substrate to be reused as part of a film transfer method.
The invention relates to a method for producing a semiconductor component, in particular a solar cell, based on a germanium thin film. The method comprises the following steps: providing a germanium substrate (1); forming a porous film (3) on a surface of the germanium substrate (1) by electrochemically etching the germanium substrate (1) in an etching solution (7); depositing a semiconductor thin film (5) on the porous film (3); and separating the semiconductor thin film (5) from the germanium substrate (1), wherein the porous film (3) is used as a predetermined breaking point. The polarity of a voltage applied between the germanium substrate (1) and an external electrode (11) is reversed multiple times during the electrochemical etching of the germanium substrate (1). In this way, a porous film can be produced in a germanium substrate, wherein the porous film enables the semiconductor thin film deposited thereon to be subsequently separated as part of a film transfer method.
A method for the production of a semiconductor component, in particular a solar cell, on the basis of a silicon thin film. A method is proposed for the production of a solar cell on the basis of a silicon thin film (5). The method presents: preparing of a silicon substrate (1); forming of a porous layer (3) at a surface of the silicon substrate (1); depositing of a silicon thin film (5) on the porous layer (3); and separating of the thin silicon layer (5) from the silicon substrate (1), with the porous layer (3) serving as a preset breaking point. The porous layer (3) is formed here by currentless chemical etching of the silicon substrate (1). By dispensing with conventionally used anodic etching and replacing with currentless chemical etching, the production process can be simplified considerably.
The invention relates to a silicon solar cell (1) and to a method for producing the same. According to the invention, a layer containing aluminium is applied to the surface of a silicon substrate (2), preferably by means of screen printing, and is subsequently baked to form an aluminium-doped silicon region (13). Excess aluminium and the aluminium-silicon eutectic are subsequently etched away and in addition the aluminium-doped silicon region (13) is back-etched. The surface of the aluminium-doped silicon region (13) is passivated using a dielectric layer, preferably consisting of silicon nitride containing hydrogen. This permits highly efficient solar cells to be produced using known production technology.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
28.
HETEROJUNCTION SOLAR CELL WITH ABSORBER HAVING AN INTEGRATED DOPING PROFILE
The invention relates to a heterojunction solar cell (1) and a method for the production thereof. The heterojunction solar cell has an absorber layer (3) made of silicon with a basic doping and at least one heterojunction layer (5, 7) of a doped semiconductor material whose band gap differs from that of the silicon of the absorber layer. The absorber layer (3) has a doped layer at an interface (13, 15) directed toward the heterojunction layer (5, 7), the doping concentration of said doped layer being greater than the basic doping concentration of the absorber layer. As a result of this doping profile, a field effect can be caused which prevents charge carrier pairs produced within the absorber layer from diffusing toward the interface between the absorber layer and the heterojunction layer and from recombining there.
H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/0376 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
29.
REAR-CONTACT SOLAR CELL HAVING ELONGATE, NESTED EMITTER AND BASE REGIONS ON THE REAR SIDE AND METHOD FOR PRODUCING THE SAME
The invention relates to a rear-contact solar cell and to a method for producing the same, wherein elongate emitter regions (5) and elongate base regions (7) are defined in a semiconductor substrate (1) in a finely interleaved manner on the surface of the rear side of the cell. The elongate emitter regions (5) are contacted by elongate emitter contacts (11) that extend at a right angle thereto, and the elongate base regions (7) are contacted by elongate base contacts (13) that extend at a right angle thereto, the structural width of the emitter and base regions (5, 7) being substantially smaller than the structural width of the emitter and base contacts. The finely interleaved arrangement of emitter and base regions (5, 7) results in good current collecting properties and low series resistances within the semiconductor substrate. Owing to the less complicated structures of the metal contacts, the latter can be produced in a simple and reliable manner.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
30.
REAR-CONTACT SOLAR CELL HAVING LARGE REAR SIDE EMITTER REGIONS AND METHOD FOR PRODUCING THE SAME
The invention relates to a rear-contact solar cell and to a method for producing the same. The rear-contact solar cell comprises a semiconductor substrate (1) on the rear side surface (3) of which emitter regions (5), contacted by emitter contacts (11), and base regions (7), contacted by base contacts (13), are defined. The emitter regions and the base regions overlap at least in overlap regions (19), the emitter regions (5) in the overlap regions (19) reaching deeper into the semiconductor substrate (1) than the base regions (7), when seen from the rear side surface of the solar cell. As a result, a large area percentage of the rear side of the semiconductor substrate can be covered with a charge-collecting emitter, said emitter being at least partially buried in the interior of the semiconductor substrate (1) so that there is no risk of the base contacts (13) provoking a short circuit towards the buried emitter regions (5).
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
31.
REAR-CONTACT SOLAR CELL HAVING AN INTEGRATED BYPASS DIODE FUNCTION AND METHOD FOR PRODUCING THE SAME
The invention relates to a rear-contact solar cell wherein emitter regions (5) and highly doped base regions (7) are defined on a semiconductor substrate of the base semiconductor type on a surface of a rear side of the cell, the emitter regions and the base regions being electrically contacted with emitter contacts (11) and base contacts (13), respectively. An interface (21) in which highly doped base regions (7) adjoin highly doped emitter regions (5) is larger than 5% of the rear side surface (3) of the semiconductor substrate (1). To achieve this, the emitter regions (5) overlap the base regions (7) in overlap regions (19) laterally in planes that are parallel relative to the rear side surface (3) of the semiconductor substrate (1). Owing to the large interface (21) between the highly doped emitter and base regions (5, 7), it is possible to produce a p+n+ junction in this region which junction allows a sufficiently strong current to flow in the reverse direction when the voltages are high enough, to function as a bypass diode for the solar cell.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
32.
METHOD FOR MANUFACTURING A SOLAR CELL WITH A SURFACE-PASSIVATING DIELECTRIC DOUBLE LAYER, AND CORRESPONDING SOLAR CELL
A solar cell with a dielectric double layer and a method for the manufacture thereof are described. Sequential vapour-phase deposition is used to produce a first dielectric layer (3), which contains aluminium oxide or comprises aluminium oxide, and a second, hydrogenous dielectric layer (5), which allows very good passivation of the surface of solar cells to be achieved.
H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
33.
REAR CONTACT SOLAR CELL AND METHOD FOR MAKING SAME
The invention concerns a solar cell (1) and a method for making same, said solar cell (1) comprising on its rear surface (3) both the emission contact (43) and the base contact (45), those two contacts (43, 45) being electrically isolated from each other by flanks (5) whereof the metal coating has been removed. The emitting zones (4) of the rear surface (3) of the cell are connected by channels to the transmitter (9) of the front face (8) of the cell. The emitting zones (4) of the rear surface (3) of the cell and the channels (7) consist of a laser. The metal coating of the side walls is removed by selective etching, said metal coating being removed only in the zone of the flanks (5) where the etching barrier layer (11) is insufficient.
patents
