09 - Scientific and electric apparatus and instruments
Goods & Services
Manufacturing machines for semiconductors, plasma machines,
optical surface treatment machines, mechanical surface
treatment machines; machines for manufacturing logic chips,
machines for manufacturing memory chips, machines for
implanting ions in semiconductor wafers, vacuum pumps, ion
implanters, parts and components for all the aforesaid
goods; doping machines, deposition machines, etching
machines; equipment for manufacturing semiconductors,
multi-station tools, ion accelerators, electron beam
accelerators, target chambers, parts and components for all
the aforesaid goods. Documents, data and other information downloadable from a
computer network or the Internet.
09 - Scientific and electric apparatus and instruments
Goods & Services
Manufacturing machines for semiconductors, plasma surface treatment machines; optical surface treatment machines and mechanical surface treatment machines for semiconductor substrates; machines for manufacturing logic chips; machines for manufacturing memory chips; machines for implanting ions in semiconductor wafers; vacuum pumps; ion implanters, namely, machines for accelerating ions into a solid target, for use in semiconductor fabrication; structural parts and components for all the aforesaid goods; doping machines for processing semiconductors; deposition machines used for manufacturing semiconductors; plasma etching machines; equipment for manufacturing semiconductors, namely, multi-station tool machines, industrial ion and electron beam accelerators with target chambers for use in semiconductor fabrication, and structural parts and components for all the aforesaid goods. Downloadable documents and data regarding information in the field of semiconductor manufacturing provided via a computer network or the Internet.
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
ION BEAM SERVICES (France)
Inventor
Lanterne, Adeline
Desrues, Thibaut
Lorfeuvre, Coralie
Torregrosa, Frank
Abstract
Disclosed is a method for manufacturing a high-temperature silicon heterojunction photovoltaic cell, the photovoltaic cell having passivated {oxide (2a, 2b) / polysilicon (3'a, 3'b)} contacts with a p-type doped polysilicon (3'a) layer strictly less than 15 nm thick, while maintaining good passivation quality by virtue of an oxidation reaction taking place during thermal annealing, within a suitable time window.
A MOSFET device arranged on a substrate 10 having first and second heavily-doped strips 11 and 14 respectively covered by first and second contacts 13 and 15, these two strips being spaced apart by a channel 18 that also appears on the substrate 10, the channel being covered by a dielectric layer 20, itself surmounted by a third contact 21. The channel 18 incorporates a thin film 19 lightly doped with dopant atoms of a same type as the channel, at the interface with the dielectric layer 20, the dopant atoms being distributed on both sides of the interface.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
The present invention relates to a MOSFET device arranged on a substrate (10), comprising a first (11) and a second (14) heavily doped strip covered with a first (13) and a second (15) contact tap, said two strips being separated by a channel (18) which also appears on the substrate (10), the channel being covered with a dielectric layer (20) on top of which a third contact tap (21) is positioned. The device is characterised in that the channel (18) incorporates a thin, lightly-doped film (19) with doping atoms of the same type as the channel, at the interface with the dielectric layer (20), the doping atoms being distributed on each side of the interface.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
an expulsion stage (4) for expelling negatively charged particles from the substrate and during which the plasma AP is extinguished.
The method is remarkable in that the duration of the expulsion stage is longer than 5 μs.
The invention also provides a power supply for biasing an implanter.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
H01L 21/223 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a gaseous phase
7.
Electrostatic heating substrate holder which is polarised at high voltage
at least one electrically conductive connection (201, 202, 203, 31, 30) for connecting the bearing plane to the biased table (10).
The support is remarkable in that the substrate carrier (20) incorporates a heating resistance (26).
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The invention relates to a control method for a plasma-immersion implanter, comprising: an implantation phase (1) during which the plasma supply AP is ignited and the substrate is biased negatively S; a neutralisation phase (2) during which the plasma AP is ignited and a positive or zero bias is applied to the substrate S; a suppression phase (3) during which the plasma AP is extinguished; an expulsion phase (4) comprising the expulsion of negatively charged particles at the substrate, during which the plasma AP is extinguished. The method is characterised in that the duration of the expulsion phase is greater than 5 μs. The invention also relates to a bias supply for an implanter.
H01L 21/223 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a gaseous phase
9.
METHOD FOR STABILIZING A SUBSTRATE AND MACHINE FOR IMPLEMENTING SAME
The present invention relates to a method for treating a substrate (23) comprising a doping step immediately followed by a stabilization step. The method is characterized in that said stabilization step involves immersing the substrate in a gas belonging to the group comprising oxygen, water vapor, moist air, hydrogen peroxide vapor, ozone and ammonia. The invention further relates to a machine for treating a substrate according to the aforementioned method and comprising a gas inlet.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
11.
Ion implantation machine presenting increased productivity
a substrate-carrier 104 connected to the negative pole of the bias power supply and arranged inside the enclosure.
the strip is interposed between the two plates.
H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
The invention relates to an ion implanter that comprises an enclosure ENV having arranged therein a substrate carrier PPS connected to a substrate power supply ALT via a high voltage electrical passage PET, the enclosure ENV being provided with pump means PP, PS, the enclosure ENV also having at least two cylindrical source bodies CS1, CS2 free from any obstacle and arranged facing the substrate carrier. This implanter is remarkable in that it includes at least one confinement coil BCI1-BCS1, BCI2-BCS2 per source body CS1, CS2.
H01J 37/36 - Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
The present invention relates to a method for implanting impurities in a component. The method is notable in that, with this component being a gas diffusion device of the showerhead type which takes the form of a hollow body 1 provided with a gas introduction orifice 2 and with an ejection surface 3 that is provided with a plurality of holes, installation takes place in the ejection surface.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
14.
ELECTROSTATIC HEATING SUBSTRATE HOLDER WHICH IS POLARISED AT HIGH VOLTAGE
The present invention relates to a bracket comprising an electrically conductive polarised table (10) which is connected to a high-voltage power supply (12) supported by an electrically insulating base (40), an electrically insulating substrate holder (20) which is cylindrical, the upper face thereof having a support plane for receiving a substrate (50), feet (15) which rest on the polarised table (10) in order to support the lower face of the substrate holder (20), at least one electrically conductive connection (201, 202, 203, 31, 30) for connecting the support plane to the polarised table (10). The bracket is characterized in that the substrate holder (20) incorporates a heating resistor (26).
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
The invention relates to a method for producing a solar cell (1) from crystalline semiconductor material. In a first surface (3a) of a semiconductor substrate (3), a first doping area (5) is formed by thermally diffusing a first dopant and in the second surface (3b) of the semiconductor substrate, a second doping area (7) is formed by implanting ions and thermally implanting a second dopant.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
16.
METHOD FOR PRODUCING A CONTACT STRUCTURE OF A PHOTOVOLTAIC CELL AND PHOTOVOLTAIC CELL
The invention relates to a method (800) for producing a contact structure (104) of a photovoltaic cell (100), wherein the method (800) comprises a step (802) of providing, a step (804) of doping, and a step (806) of contacting. In step (802) of providing, a wafer (102) for the photovoltaic cell (100) is provided. In step (804) of doping, a surface portion of at least one side of the wafer (102) is doped with a doping material in order to obtain a doped region (106), wherein the doped region (106) is formed as doped tracks (106) and the tracks (106) are separated by intermediate spaces (110). In step (806) of contacting, the doped region (106) is contacted in order to produce the contact structure (104), wherein a conductor material (108) is applied to the tracks (106) in such a way that the tracks (106) protrude beyond the conductor material (108) on both sides.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
17.
METHOD FOR PRODUCING A SOLAR CELL INVOLVING DOPING BY ION IMPLANTATION AND THE DEPOSITING OF AN OUTDIFFUSION BARRIER
The invention relates to a method for producing a solar cell (1) from crystalline semiconductor material, wherein a first doping region (5) is formed by means of ion implantation (S2) of a first dopant in a first surface (3a) of a semiconductor substrate (3), and a second doping region (7) is formed by means of ion implantation (S3) or thermal indiffusion of a second dopant in the second surface (3b) of the semiconductor substrate. After the doping of the second surface, a cap (9b) acting as an outdiffusion barrier for the second dopant is applied and an annealing step (S4) is subsequently carried out.
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A control module for an ion implanter having a power supply, the power supply comprising: an electricity generator HT having its positive pole connected to ground; a first switch SW1 having its first pole connected to the negative pole of the generator HT and having its second pole connected to the outlet terminal S of the power supply; and a second switch SW2 having its first pole connected to the outlet terminal S and having its second pole connected to a neutralization terminal N. The control module also comprises a current measurement circuit AMP for measuring the current that flows between the second pole of the second switch SW2 and the neutralization terminal N.
the method including an implantation stage A-D and a neutralization stage E-H. The method also includes a relaxation stage C-F overlapping the implantation stage and the neutralization stage, during which relaxation stage the plasma power supply is inactivated. Furthermore, the neutralization stage includes a preliminary step E-F for closing the second switch, this preliminary step being followed by a cancellation step F-G for activating the plasma power supply AP.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01L 21/223 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a gaseous phase
20.
Support including an electrostatic substrate carrier
an electrically conductive clamping collar for clamping the shoulder 21 against the biased table.
The support also has at least one electrically conductive element 201-202-203 for connecting the bearing plane to the shoulder 211.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
21.
ION-IMPLANTATION MACHINE HAVING INCREASED PRODUCTIVITY
The present invention concerns an ion-implantation machine (100) that comprises: - an enclosure (101) that is connected to a pumping device (102), - a plasma source (115-121-122), - a bias supply (113), - a gas inlet (117) arranged on this enclosure, - a substrate support (104) connected to the negative pole of this bias supply and arranged in the enclosure. This machine is remarkable in that: - the substrate support 104 consists of at least two parallel plates (105, 106), - a reference electrode consists of at least one blade (110), said reference electrode being connected to the positive pole of the bias supply, - said blade being inserted between the two plates.
The invention relates to a method for doping a silicon sheet for producing a photovoltaic cell, said method comprising the steps consisting of: carrying out a first doping of at least one first part (11) of a surface (10) of the silicon sheet; forming an oxide layer (40) on the partially doped surface (10); and carrying out a second doping via the oxide layer (40), such that another part (12) of the surface (10) of the silicon sheet is doped.
H01L 21/223 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a gaseous phase
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
23.
ION IMPLANTER PROVIDED WITH A PLURALITY OF PLASMA SOURCE BODIES
The invention relates to an ion implanter comprising an enclosure ENV containing a substrate carrier PPS connected to a substrate supply ALT by means of a high-voltage electrical passage PET, said enclosure ENV being provided with pumping means PP, PS and also comprising at least two cylindrical, obstacle-free source bodies CS1, CS2 arranged facing the substrate carrier. Said implanter is characterised in that it comprises at least one containment coil BCI1 -BCS1, BCI2-BCS2 per source body CS1, CS2.
An ion implantation machine includes an enclosure that is connected to a pump device, a negatively polarized substrate-carrier that is arranged inside the enclosure, and a plasma feed device in the form of a generally cylindrical body extending between an initial section and a terminal section, the device having a main chamber provided with an ionization cell, the main chamber being provided with a gas delivery orifice, and the final section of the main chamber being provided with a head-loss component for creating a pressure drop relative to the body. Furthermore, the plasma feed device also includes an auxiliary chamber arranged beyond the final section, the auxiliary chamber opening out into the enclosure at the terminal section.
The present invention relates to a support which comprises: an electrically conductive polarised table; an electrostatic insulating substrate holder 20 in the form of a cylinder provided with a shoulder 21, the lower face of the substrate holder 20 facing the polarised table and the upper face 22 thereof having a supporting plane for receiving a substrate; and an electrically conductive clamp for clamping the shoulder 21 to the polarised table. Additionally, the support comprises at least one electrically conductive element 201-202-203 for connecting the supporting plane to the shoulder 21.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H02N 13/00 - Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
26.
Dose measurement device for plasma-immersion ion implantation
The present invention relates to a method of controlling an ion implanter comprising a plasma power supply (AP) and a substrate power supply (PS), said substrate power supply comprising: • - an electricity generator (HT), • - a first switch (SW1) connected between the generator and the output terminal of said substrate power supply, • - a second switch (SW2) connected between the output terminal and a neutralising terminal, method comprising an implantation phase (A-D) and a neutralisation phase (E-H). This method also comprises a relaxation phase (C-F) which overlaps the implantation phase and the neutralisation phase, relaxation phase during which the plasma power supply is inactivated. Furthermore, the neutralisation phase comprises a preliminary step (E-F) to close the second switch, said preliminary step being followed by a cancellation step (F-G) to activate the plasma power supply (AP). Figure to be published: figure 4.
H01L 21/223 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a gaseous phase
28.
CONTROL MODULE FOR AN ION IMPLANTER IN THE PLASMA IMMERSION MODE
The present invention relates to a control module for an ion implanter, comprising a power supply, said power supply including: an electrical generator (HT), the positive pole of which is connected to the ground; a first switch (SW1), the first pole of which is connected to the negative pole of the generator (HT) and the second pole of which is connected to the output terminal (S) of said power supply; and a second switch (SW2), the first pole of which is connected to the output terminal (S) and the second pole of which is connected to the neutral terminal (N). In addition, said control module includes a circuit (AMP) for measuring the current that flows between the second pole of the second switch (SW2) and the neutral terminal (N). The invention also relates to an ion implanter provided with said control module.
The present invention relates to an ion implantation tool comprising: a chamber ENV that is connected to a pumping device VAC; a negatively biased HV substrate holder PPS that is located in this chamber ENV; a device AP for providing a plasma, taking the form of a cylindroidal body that extends between an initial section and an end section, this device comprising a main chamber PR provided with an ionization cell BC1, ANT1, the main chamber PR being equipped with an orifice ING for supplying gas, and the final section CL of said main chamber being provided with reducing means for causing loss of charge with reference to the body AP. In addition, the device AP for supplying plasma also comprises an auxiliary chamber AUX placed beyond the final section, this auxiliary chamber opening into the chamber ENV at said end section.
The invention relates to a dose measurement device for plasma-immersion ion implantation, said device comprising a module for estimating the implantation current (CUR), a secondary electron detector (DSE) and a control circuit (CC) for estimating the ion current by differentiation of the implantation current and the current resulting from the secondary electron detector. In addition, the detector for energetic secondary electrons (DSE) comprises a collector bearing only three electrodes insulated from one another, namely: a first repelling electrode for repelling the charges to be rejected having a pre-determined sign, said electrode being provided with at least one opening for the passage of electrons; a second repelling electrode for repelling the charges to be rejected having the opposite sign, said electrode also being provided with at least one opening for the passage of electrons; and a selection electrode, said electrode also being provided with at least one opening for the passage of electrons.
The invention relates to a detector for energetic secondary electrons, comprising a collector P bearing only three electrodes insulated from one another and polarised with reference to the collector, namely: a first repelling electrode A1 for repelling the charges to be rejected having a pre-determined sign, said negatively polarised electrode being provided with at least one opening for the passage of electrons; a second repelling electrode A2 for repelling the charges to be rejected having the opposite sign, said positively polarised electrode also being provided with at least one opening for the passage of electrons; and a selection electrode A3, said electrode also being provided with at least one opening for the passage of electrons. The openings in the electrodes are aligned on a conduction cylinder (D). In addition, the selection electrode A3 is polarised negatively. The invention also relates to a method for detecting secondary electrons using said detector.
