A reference current generating circuit including a reference voltage generating circuit and a current source circuit is provided. The reference voltage generating circuit generates a first reference voltage according to a first current. The reference voltage generating circuit includes a native transistor device, and the first current flows through the native transistor device. The current source circuit is coupled to the reference voltage generating circuit. The current source circuit generates a reference current according to the first reference voltage. The current source circuit includes a cascode transistor circuit, and the reference current flows through the cascode transistor circuit. The cascode transistor circuit includes a low-voltage transistor device and a high-voltage transistor device coupled in series.
G05F 3/16 - Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
An angle sensing device including a first cover body, a second cover body, a rotating mechanism, a first magnetic element, a second magnetic element, a first magnetic sensor, a second magnetic sensor, and a controller is provided. The first magnetic sensor is configured to sense a magnetic field generated by the first magnetic element. The second magnetic sensor is disposed on an end of the first cover body away from the rotating mechanism corresponding to a position of the second magnetic element, and is configured to generate an auxiliary signal when the second magnetic element approaches. The controller receives the magnetic field sensed by the first magnetic sensor to calculate an included angle between the second cover body and the first cover body. The controller judges whether the second cover body and the first cover body are in a closed state or an open state according to the auxiliary signal and the calculated included angle.
G01D 5/14 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
Provided is a displacement sensing device adapted to sense a displacement of an object. The displacement sensing device includes a magnetic element array, a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a computing unit. The first magnetic sensor, the second magnetic sensor and the third magnetic sensor are adapted to move relative to the magnetic element array along a column direction, and are configured to sense components of a magnetic field generated by the magnetic element array in the column direction and a row direction. When the magnetic element array moves relative to the first magnetic sensor, the second magnetic sensor and the third magnetic sensor, the computing unit selects a signal sensed by one of the first magnetic sensor, the second magnetic sensor and the third magnetic sensor to compute the displacement of the object.
G01D 5/14 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
A magnetic field sensing device is provided. The magnetic field sensing device includes a magnetoresistance sensor, a Hall sensor, and a calculating circuit. The magnetoresistance sensor senses a magnetic field to provide a magnetoresistance sensing value. The Hall sensor senses the magnetic field to provide a Hall sensing value. The calculating circuit provides a weight value according to the magnetoresistance sensing value, generates a first calculating value according to the weight value and the Hall sensing value, and generates a second calculating value according to the weight value and the magnetoresistance sensing value. The calculating circuit calculates on the first calculating value, the second calculating value, and the magnetoresistance sensing value to generate an output signal with an output value. The output value is associated with a strength of the magnetic field.
Disclosed is a movement sensing device adapted to sense an amount of movement of an object. The movement sensing device includes a first magnetic sensor, a second magnetic sensor, a special-shaped magnetic element, and a controller. The special-shaped magnetic element has a magnetization direction, is connected with the object, and is adapted to be moved along a direction parallel to a connection line between the first magnetic sensor and the second magnetic sensor. The special-shaped magnetic element, the first magnetic sensor, and the second magnetic sensor are disposed on a plane. The magnetization direction is perpendicular to the plane. The controller is electrically connected to the first magnetic sensor and the second magnetic sensor. The controller calculates the amount of movement according to a difference between magnetic forces sensed by the first magnetic sensor and the second magnetic sensor from the special-shaped magnetic element.
A leakage current detection circuit and a fluxgate driver are provided. The leakage current detection circuit is suitable for a fluxgate device. The leakage current detection includes a duty cycle detection circuit, a compensation circuit, and a control signal generation circuit. The duty cycle detection circuit receives a pulse width modulation (PWM) signal from an inverter circuit. The duty cycle detection circuit detects a duty cycle of the PWM signal by sampling the PWM signal with a clock signal to output a count signal. The compensation circuit adjusts a pulse number of the count signal according to an offset signal in a self-test period. The control signal generation circuit calculates an average value of the count signal, and compares the average value with multiple threshold values to respectively generate multiple control signals. The control signals indicate a leakage current state of the fluxgate device.
H03K 5/24 - Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
G01R 31/52 - Testing for short-circuits, leakage current or ground faults
H02M 7/5387 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
G01R 1/44 - Modifications of instruments for temperature compensation
A magnetic field sensing apparatus including a magnetic flux concentrator, a plurality of single direction magneto-resistive sensors and a time division switching circuit is provided. The magnetic flux concentrator has a plurality of corners. The single direction magneto-resistive sensors have a same pinning direction. The single direction magneto-resistive sensors are respectively disposed beside the corners. The time division switching circuit is coupled to the single direction magneto-resistive sensors, and is configured to switch at least a portion of the junctions between the single direction magneto-resistive sensors to change a circuit connection between the magneto-resistive sensors, thereby forming different Wheatstone bridges being configured to measure different magnetic field components of the external magnetic field in different directions.
A magnetic field sensing apparatus including a substrate, a plurality of magnetoresistance sensors and a plurality of magnetization direction setting devices is provided. A surface of the substrate includes a plurality of inclined surfaces and a plane surface. The magnetoresistance sensors include a plurality of first magnetoresistance sensors disposed at the inclined surfaces and a plurality of second magnetoresistance sensors disposed at the plane surface. The first magnetoresistance sensors include a first and a third portions and form a first full Wheatstone Bridge. The second magnetoresistance sensors include a second and a fourth portions and form a second full Wheatstone Bridge. The magnetization direction setting devices include a first and a second magnetization direction setting devices. The first magnetization direction setting device is disposed beside and overlaps with the first and the second portions. The second magnetization direction setting device is disposed beside and overlaps with the third and the fourth portions.
A magnetic field sensing device includes first magnetoresistor units, second magnetoresistor units, a first testing conductive line, a second testing conductive line, and a driver. The first magnetoresistor units are arranged in a first direction. The second magnetoresistor units are arranged in the first direction, and the second magnetoresistor units are disposed on a side of the first magnetoresistor units in a second direction. The first testing conductive line is disposed on a side of the first magnetoresistor units in a third direction, and extends in the first direction. The second testing conductive line is disposed on a side of the second magnetoresistor units in the third direction, and extends in the first direction. The driver is configured to make two currents in a same direction and two currents in opposite directions pass through the first testing conductive line and the second testing conductive line at different times, respectively.
An angle sensing device including a first object, a second object, a magnetic field source, and a first magnetic sensor is provided. The second object is adapted to be rotated with respect to the first object, so that an inclined angle of the second object with respect to the first object is changed. The magnetic field source is connected to the second object. The first magnetic sensor is connected to the first object, and configured to sense a magnetic field generated by the magnetic field source. When the second object is rotated with respect to the first object, the magnetic field sensed by the first magnetic sensor changes, so that an output signal of the first magnetic sensor corresponding to the magnetic field changes.
G01B 7/30 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapersMeasuring arrangements characterised by the use of electric or magnetic techniques for testing the alignment of axes
An electric current sensor includes a substrate, a conductive wire, a first anisotropic magnetoresistor (AMR) unit, a second AMR unit, a third AMR unit, a fourth AMR unit, a first magnetization direction setting device, and a second magnetization direction setting device. The conductive wire has a first conductive segment and a second conductive segment respectively disposed below a first end and a second end opposite to the first end of the substrate. The first AMR unit and the second AMR unit are disposed above the first end of the substrate. The third AMR unit and the fourth AMR unit are disposed above the second end of the substrate. The first magnetization direction setting device and the second magnetization direction setting device are configured to set magnetization directions of the AMR units.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
An electric current sensor includes a substrate, a first sloped surface, a second sloped surface, at least one conductive wire, a first anisotropic magnetoresistor (AMR) unit, a second AMR unit, a first magnetization direction setting device, and a second magnetization direction setting device. The first sloped surface and the second sloped surface are disposed on the substrate and arranged in a first direction. The at least one conductive wire extends along a second direction and is disposed beside the substrate. The first AMR unit is disposed on the first sloped surface. The second AMR unit is disposed on the second sloped surface. The first magnetization direction setting device and the second magnetization direction setting device are configured to set magnetization directions of the AMR units.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
A magnetic field sensing device including a magnetic flux concentrating module and a plurality of vortex magnetoresistors is provided. The magnetic flux concentrating module has a first side, a second side, a third side and a fourth side, wherein the first side is parallel to the third side, the second side is parallel to the fourth side, and the first side is not parallel to the second side. The vortex magnetoresistors are disposed beside the first to the fourth sides. The vortex magnetoresistors have a same pinning direction. The pinning direction is inclined with respect to the first side and the second side. The vortex magnetoresistors are configured to be connected to form a plurality of different Wheatstone bridges, so as to sense magnetic field components in a plurality of different directions, respectively.
A magnetic field sensing device includes at least one vortex magnetoresistor and at least one magnetization setting element. The vortex magnetoresistor includes a pinning layer, a pinned layer, a spacer layer, and a round free layer. The pinned layer is disposed on the pinning layer, and the spacer layer is disposed on the pinned layer. The round free layer is disposed on the spacer layer, and has a magnetization direction distribution with a vortex shape. The magnetization setting element is alternately applied and not applied an electric current to. When the magnetization setting element is not applied the electric current to, the magnetization direction distribution with the vortex shape of the round free layer is varied with an external magnetic field. When the magnetization setting element is applied the electric current to, a magnetic field generated by the magnetization setting element makes the round free layer achieve magnetic saturation.
H01F 10/32 - Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
A magnetic field sensing apparatus including a magnetic flux concentrator and a plurality of single direction magneto-resistive sensors is provided. The magnetic flux concentrator has a first and a second end portions opposite to each other. The single direction magneto-resistive sensors have the same pinning direction and are disposed beside the magnetic flux concentrator. The single direction magneto-resistive sensors further include a plurality of first and second single direction magneto-resistive sensors. The first single direction magneto-resistive sensors are disposed beside the first end portion and further include a first and a third portions respectively being disposed two opposite sides of the first end portion. The first and a third portions are coupled to a first full Wheatstone bridge. The second single direction magneto-resistive sensors are disposed beside the second end portion and further include a second and a fourth portions respectively being disposed two opposite sides of the second end portion. The second and the fourth portions are coupled to a second full Wheatstone bridge.
G01R 15/18 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers
G01R 33/00 - Arrangements or instruments for measuring magnetic variables
G01B 7/14 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
A current sensing method and a current sensor are provided. The current sensing method includes the steps of: exciting a magnetic core to generate at least one pair of regions having opposite magnetization directions in the magnetic core; providing a current to pass through a sensing region of the magnetic core, so that the magnetic core correspondingly generates a magnetic field change; and sensing the magnetic field change of the magnetic core by a pickup coil wound around the magnetic core to output an output signal corresponding to the current.
G01R 15/18 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers
17.
Magnetic field sensing device including magnetoresistor wheatstone bridge
A magnetic field sensing device including a plurality of first magnetoresistor units and a plurality of second magnetoresistor units is provided. Magnetic field sensing axes of the first magnetoresistor units are parallel to a plane formed by a first direction and a third direction and are inclined with respect to the first direction and the third direction. Magnetic field sensing axes of the second magnetoresistor units are parallel to a plane formed by a second direction and the third direction and are inclined with respect to the second direction and the third direction. The first magnetoresistor units and the second magnetoresistor units are configured to measure a plurality of magnetic field components in a plurality of directions in three-dimensional space in a plurality of different time periods, respectively.
A magnetic field sensing apparatus including a magnetic flux concentrator, a plurality of magnetoresistance units, and a plurality of magnetization direction setting elements is provided. The magnetic flux concentrator has a top surface, a bottom surface opposite to the top surface, and a plurality of side surfaces connecting the top surface and the bottom surface. The magnetoresistance units are respectively disposed beside the side surfaces. The magnetoresistance units are electrically connected to form an unchangeable Wheatstone full bridge. The magnetization direction setting elements set the magnetization directions of the magnetoresistance units into three different combinations in three different periods, respectively, so as to enable the unchangeable Wheatstone full bridge to respectively measure the magnetic field components in the three different directions in the three different periods.
G01R 33/12 - Measuring magnetic properties of articles or specimens of solids or fluids
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
G01R 33/038 - Measuring direction or magnitude of magnetic fields or magnetic flux using permanent magnets, e.g. balances, torsion devices
B64G 1/36 - Guiding or controlling apparatus, e.g. for attitude control using sensors, e.g. sun-sensors, horizon sensors
G01N 27/72 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables
G01N 27/90 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables for investigating the presence of flaws using eddy currents
G01V 3/10 - Electric or magnetic prospecting or detectingMeasuring magnetic field characteristics of the earth, e.g. declination or deviation operating with magnetic or electric fields produced or modified by objects or geological structures or by detecting devices using induction coils
H03K 17/95 - Proximity switches using a magnetic detector
A magnetic field sensing device including a substrate, a plurality of magnetic flux concentrators and a plurality of magneto-resistive sensors and a plurality of magnetic setting structures is provided. The magnetic flux concentrators, the magneto-resistive sensors and the magnetic setting structures are disposed on the substrate. At least a portion of the magneto resistive sensors is disposed at two opposite sides of each of the magnetic flux concentrators. The orthogonal projection regions of each of the magnetic flux concentrators, at least a portion of the magneto-resistive sensors, and each of the magnetic setting structures on the substrate are respectively a first orthogonal projection region, a second orthogonal projection region, and a third orthogonal projection region. The third orthogonal projection region at least overlaps the first orthogonal projection region and at least a portion of the second orthogonal projection region. Furthermore, a magnetic field sensing apparatus is also provided.
A magnetic field sensing apparatus and a sensing method are provided. The magnetic field sensing apparatus includes an anisotropic magnetoresistive (AMR) resistor, a current generator, and an arithmetic device. The AMR resistor is configured to provide a first resistance value according to a sensed magnetic field in a first magnetic field sensing phase and provide a second resistance value according to the sensed magnetic field in a second magnetic field sensing phase by a magnetized direction setting operation. The current generator provides a current based on a current direction to flow through two ends of the AMR resistor. The arithmetic device is configured to perform an arithmetic operation with respect to a first voltage difference and a second voltage difference generated according to the current respectively in the first magnetic field sensing phase and the second magnetic field sensing phase, and generate a magnetic field sensing voltage result accordingly.
A magnetic field sensing apparatus including a plurality of first magnetoresistance units, a plurality of second magnetoresistance units, and a magnetic field sensing device is provided. Magnetic field sensing axes of the first and second magnetoresistance units are parallel to a first direction and a second direction respectively, and the first and second magnetoresistance units are disposed beside the magnetic field sensing device, which is configured to measure a magnetic field component in a third direction. The first and second magnetoresistance units are electrically connected to form at least one kind of Wheatstone full bridge in two different time periods to respectively measure magnetic field components in fourth and fifth directions and to cause this kind of Wheatstone full bridge to output two signals respectively corresponding to the magnetic field components in the fourth and fifth directions. The first direction to the fifth direction are different from each other.
A magnetic field sensing apparatus and detection method thereof are provided. The magnetic field sensing apparatus includes an anisotropic magneto-resistive (AMR) magnetic field detector, a reference magnetic field detector, and a controller. The AMR magnetic field detector generates a first output voltage according to a detected magnetic field. The reference magnetic field detector generates a second output voltage according to the detected magnetic field. The controller identifies whether an absolute value of a field density of the detected magnetic field is larger or smaller than a predetermined value or not, and selects the first output voltage or a saturation voltage to be a magnetic field detection result accordingly.
A magnetic field sensing apparatus and a detection method thereof are provided. The magnetic field sensing apparatus includes first and second AMR resistors, a current generator, and an arithmetic device. A magnetized direction of the first AMR resistor is set as a first direction. A magnetized direction of the second AMR resistor is set as a second direction opposite to or the same as the first direction. The current generator provides a current in a direction parallel to the first direction to flow through the first and second AMR resistors. The arithmetic device obtains a first detection voltage according to a voltage difference between two terminals of the first AMR resistor, obtains a second detection voltage according to a voltage difference between two terminals of the second AMR resistor, and performs his an arithmetic operation on the first and second detection voltages to obtain a first magnetic field detection result.
A magnetic field sensing apparatus including a magnetic flux concentrator and a plurality of magnetoresistance units is provided. The magnetic flux concentrator has a top surface, a bottom surface opposite to the top surface, and a plurality of side surfaces connecting the top surface and the bottom surface. The magnetoresistance units are respectively disposed beside the side surfaces. The magnetoresistance units are electrically connected to form at least one kind of Wheatstone full bridge in three different periods, so as to measure magnetic field components in three different directions, respectively, and to cause the at least one kind of Wheatstone full bridge to output three signals corresponding to the magnetic field components in the three different directions, respectively.
G01R 33/12 - Measuring magnetic properties of articles or specimens of solids or fluids
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
G01R 33/038 - Measuring direction or magnitude of magnetic fields or magnetic flux using permanent magnets, e.g. balances, torsion devices
G01V 3/10 - Electric or magnetic prospecting or detectingMeasuring magnetic field characteristics of the earth, e.g. declination or deviation operating with magnetic or electric fields produced or modified by objects or geological structures or by detecting devices using induction coils
A measurement method is configured to measure an external magnetic field. The measurement method includes: modifying a magnetic field distribution of the external magnetic field, so as to convert at least a portion of each of components of the external magnetic field in a first direction, a second direction, and a third direction at a plurality of different positions to the second direction, and sensing a magnitude of a magnetic field in the second direction at the different positions, so as to measure component magnitudes of the external magnetic field in the first, second and third directions.
A magnetic field sensing apparatus including a substrate, first, second, and third magnetic field sensing units, and a switching circuit is provided. The substrate has a surface, and has a first inclined surface and a second inclined surface. The first magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone full bridge and disposed on the surface. The second magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone half bridge and disposed on the first inclined surface. The third magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone half bridge and disposed on the second inclined surface. The switching circuit electrically connects the second magnetic field sensing unit and the third magnetic field sensing unit. A magnetic field sensing module is also provided.
A magnetic field sensing module including a plurality of magnetic flux concentrators and a plurality of sensing elements is provided. Each of the magnetic flux concentrators extends along a first extension direction, and the magnetic flux concentrators are arranged along a second direction. The sensing elements are respectively disposed at a position corresponding to a position between the magnetic flux concentrators and positions corresponding to two sides of the magnetic flux concentrators arranged along the second direction. Sensing directions of the sensing elements are substantially the same. A measurement method and a manufacturing method of a magnetic field sensing module are also provided.
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