A temperature control device of the present invention includes: a top plate which is formed in a disk shape centered on an axis and has a placement surface for placing an object thereon; a Peltier member that is disposed in contact with the top plate from the direction of the axis; a cooling plate which is disposed on the Peltier member on the side opposite to the top plate in the direction of the axis to come into contact with the Peltier member and allows a refrigerant to flow therein; a cover plate which forms an accommodation space accommodating the Peltier member and the cooling plate between the top plate and the cover plate; and a pressure reducing device which reduces the pressure within the accommodation space, wherein the top plate and the cooling plate are not in contact with each other.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H10N 10/10 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
A thermoelectric power generation device includes: a high-temperature plate having an upper face; a low-temperature plate having a lower face; a thermoelectric module disposed between the upper face and the lower face; a sealing portion disposed between the upper and lower faces, the sealing portion sealing the thermoelectric module at a circumferential portion of the upper face and a circumferential portion of the lower face; a first positioning portion disposed at the circumferential portion of the upper face; and a second positioning portion disposed at the circumferential portion of the lower face. The first positioning portion positions the sealing portion at the circumferential portion of the upper face, and the second positioning portion positions the sealing portion at the circumferential portion of the lower face.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
This temperature adjustment device comprises: a flow passage block 40 provided on a front surface and a rear surface and having flow passage grooves through which a fluid flows; a pair of heat transfer plates 11 facing the flow passage grooves 42 provided in the flow passage block 40; a heat transfer chamber 20 formed between the flow passage block 40 and the heat transfer plates 11; a fluid supply port 43 disposed in an outer peripheral part of the heat transfer chamber 20; and a fluid discharge port 44 disposed in the outer peripheral part of the heat transfer chamber. The heat transfer chamber is formed in a circular shape. The fluid supply port 43 and the fluid discharge port 44 are disposed apart from each other in a radial direction across a center part of the heat transfer chamber 20. A plurality of the flow passage grooves 42 are formed so as to connect the fluid supply port 43 and the fluid discharge port 44.
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
F28D 15/02 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes
To control creep deformation due to a time-dependent load. A temperature adjustment device includes: a pair of channel plates 40 each of which has a front surface 40A and a channel groove 42 provided in at least a part of the front surface 40A; a pair of heat transfer plates 11 that respectively faces the channel grooves 42 respectively provided in the pair of channel plates 40; a seal member 47 that seals a boundary between the front surface 40A of each of the channel plates 40 and each of the heat transfer plates 11; a spacer member 41 that is arranged in a manner of facing back surfaces 40B of the channel plates 40 and is arranged in at least a part of a region immediately below the seal member 47; and a bolt 60 and a nut 61 that fasten the pair of channel plates 40 and the pair of heat transfer plates 11 in an overlapped state. The spacer member 41 has higher compressive strength than the channel plates 40.
F25B 21/04 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect reversible
F28F 3/12 - Elements constructed in the shape of a hollow panel, e.g. with channels
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
5.
WAFER TEMPERATURE CONTROL DEVICE AND WAFER TEMPERATURE CONTROL METHOD
A temperature control device for a wafer includes: a mounting unit in which a mounting surface on which a wafer is mountable is partitioned into a plurality of areas; a temperature adjusting unit configured to adjust temperatures of the plurality of areas; temperature sensors configured to detect the temperatures of the plurality of areas; a temperature control unit configured to control the temperatures of the plurality of areas; a disturbance detecting unit configured to detect application of disturbance to the corresponding area; and a switching unit configured to feed only the detected temperature of the temperature sensor provided in the area to which application of disturbance has been detected back to the temperature control unit. The temperature adjusting unit adjusts the temperatures of the plurality of areas on the basis of the detected temperature fed back by the switching unit.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
6.
HEAT REMOVAL PLATE AND THERMOELECTRIC POWER GENERATION UNIT
F28F 3/00 - Plate-like or laminated elementsAssemblies of plate-like or laminated elements
F28D 7/04 - Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being spirally coiled
F28F 9/22 - Arrangements for directing heat-exchange media into successive compartments, e.g. arrangements of guide plates
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H10N 10/10 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
H10N 10/13 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
A temperature adjustment device includes: a placement portion having a placement surface on which an object to be controlled temperature thereof is placed; a bottom portion facing the placement portion; a first support portion sandwiched between the placement portion and the bottom portion and supporting a center portion of the placement portion; a heat source portion disposed between the placement portion and the bottom portion and is allowed to heat and cool the object via the placement portion; a heat radiation portion disposed between the heat source portion and the bottom portion and exchanging heat with the heat source portion; and a second support portion disposed between the placement portion and the bottom portion and disposed close to the axis, wherein the second support portion supports an end portion of the heat radiation portion so as to separate the heat radiation portion from the bottom portion.
A thermoelectric module includes: a lower substrate; an upper substrate that is disposed above the lower substrate and faces the lower substrate; a plurality of p-type and n-type thermoelectric elements that are disposed between the lower substrate and the upper substrate; a first electrode that is disposed on an upper surface of the lower substrate and a lower surface of the upper substrate and forms a series circuit by alternately and sequentially connecting the p-type and n-type thermoelectric elements; and a second electrode that is provided on the lower substrate and connects a thermoelectric element at an end portion of the series circuit and a post. The post includes a post main body that is formed of titanium, and a titanium passive film that covers a side surface of the post main body.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
This thermoelectric module is for adjusting the temperature of a temperature adjustment target, and comprises: a plurality of thermoelectric elements provided between the temperature adjustment target and a substrate disposed to face the temperature adjustment target in a first direction; and a plurality of electrodes that are provided on the substrate side and on the temperature adjustment target side of the thermoelectric elements and that electrically connect the adjacent thermoelectric elements in a second direction intersecting with the first direction. The electrodes are each provided with: two electrode base parts separated away from each other in the second direction and connected to the corresponding thermoelectric elements; and a coupling part for coupling the two electrode base parts. The coupling part is provided with a hole section perforating in the first direction; neck sections that are provided on both sides in the second direction across the hole section and that enter inwardly in a third direction intersecting with the first direction and the second direction; and a displacement absorbing section formed along the outer shape of the coupling part and the outer shape of the hole section.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
10.
THERMOELECTRIC GENERATION MODULE AND THERMOELECTRIC GENERATION UNIT
A thermoelectric generation module 10 comprises: a first base material 11 formed in sheet shape; a second base material 12 formed in sheet shape; a plurality of thermoelectric conversion elements 21 that are disposed between the first base material 11 and the second base material 12; a plurality of first electrodes 22 that are disposed between the first base material 11 and the thermoelectric conversion elements 21; a plurality of second electrodes 23 that are disposed between the second base material 12 and the thermoelectric conversion elements 21; and a junction portion A that joins the first base material 11 and the second base material 12. The thermoelectric conversion elements 21, the plurality of first electrodes 22, and the plurality of second electrodes 23 are sealed by the junction portion A. The junction portion A joins the first base material 11 and the second base material 12 by soldering with a metal film 13 and a metal film 14 therebetween.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
H10N 10/13 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
H10N 10/817 - Structural details of the junction the junction being non- separable, e.g. being cemented, sintered or soldered
11.
Electrode connection structure and detection device
An electrode connection structure includes a first electrode unit that includes first electrodes formed concentrically, and a second electrode unit that includes a second electrode formed into a needle shape axially movable forward and rearward and is electrically connectable to the first electrode unit, and in the electrode connection structure, the second electrode unit includes a plurality of the second electrodes that is arranged in a circumferential direction and arranged at different radial positions, and the plurality of the second electrodes is electrically connected to the first electrodes arranged at different radial positions, respectively.
A thermoelectric power generation device includes: a high-temperature plate having an upper face; a low-temperature plate having a lower face; a thermoelectric module disposed between the upper face and the lower face; a sealing portion disposed between the upper and lower faces, the sealing portion sealing the thermoelectric module at a circumferential portion of the upper face and a circumferential portion of the lower face; a first positioning portion disposed at the circumferential portion of the upper face; and a second positioning portion disposed at the circumferential portion of the lower face. The first positioning portion positions the sealing portion at the circumferential portion of the upper face, and the second positioning portion positions the sealing portion at the circumferential portion of the lower face.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
A wafer temperature control device includes a temperature control sheet; and a top plate. The temperature control sheet includes a plurality of temperature control portions. The plurality of temperature control portions are divided from each other via a division region in the same plane. The plurality of temperature control portions are each independently controllable in temperature. The top plate includes a plate body stacked on the temperature control sheet. A surface of the plate body serves as a placement surface for a semiconductor wafer, the surface being opposite the temperature control sheet. The top plate includes a heat insulating portion. The heat insulating portion is disposed at a position corresponding to the division region in the plate body, when viewed in a stacking direction of the temperature control sheet and the top plate. The heat insulating portion has a thermal conductivity lower than a thermal conductivity of the plate body.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
14.
THERMOELECTRIC MATERIAL, THERMOELECTRIC ELEMENT, THERMOELECTRIC MODULE, DEVICE, AND METHOD FOR MANUFACTURING THERMOELECTRIC MATERIAL
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)
Inventor
Fujimoto Shinichi
Ohta Michihiro
Imasato Kazuki
Koyano Mikio
Miyata Masanobu
Abstract
233, wherein A of the composition formula is one or more elements selected from the group consisting of Bi and Sb, and B of the composition formula is one or more elements selected from the group consisting of Te, Se, and S. Oxide particles including one or more elements selected from the group of C consisting of Zn, Nb, and Al and telluride particles including one or more elements selected from the group of C are deposited on the inside of the crystal grains of the matrix and/or the crystal grain boundaries of the matrix. The long diameter of the oxide particles is 1 nm to 1000 nm and the short diameter of the oxide particles is 1 nm to 500 nm. The long diameter of the telluride particles is 0.4 μm to 40 μm and the short diameter of the telluride particles is 0.4 μm to 20 μm.
A temperature control system includes: a circulation channel which includes a temperature adjustment target and through which a circulation fluid that adjusts a temperature of the temperature adjustment target flows; a temperature adjuster that is arranged in the circulation channel and that adjusts a temperature of the circulation fluid supplied to the temperature adjustment target; a first temperature adjustment unit that is connected to the circulation channel via a first supply channel and that delivers a first fluid having a first temperature; a second temperature adjustment unit that is connected to the circulation channel via a second supply channel and that delivers a second fluid having a second temperature higher than the first temperature; a first valve arranged in the first supply channel; and a second valve arranged in the second supply channel. The second valve is an electromagnetic valve, and closes the second supply channel after opening the second supply channel when a set temperature of the temperature adjustment target is changed from a first set temperature to a second set temperature higher than the first set temperature.
A thermoelectric module for optical communication includes a first substrate and a second substrate that are a pair of substrates disposed opposite to each other, a plurality of thermoelectric conversion elements disposed between the first substrate and the second substrate, a first electrode and a second electrode that are a pair of electrodes connecting the thermoelectric conversion elements, a metallized portion disposed on the second substrate, a post electrode, of an anode, electrically connected to the first electrode and the second electrode, a post electrode, of a cathode, electrically connected to the first electrode and the second electrode, and a wire as a conductor structure electrically connecting the metallized portion and a part having a lower voltage than the post electrode of the anode.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
The present invention suppresses creep deformation due to weighted load over time. This temperature adjustment device comprises: a pair of flow path plates 40 each including an upper surface 40A and a flow path groove 42 provided in at least a part of the upper surface 40A; a pair of heat conduction plates 11 opposing the flow path grooves 42 provided in respective ones of the pair of flow path plates 40; seal members 47 sealing a boundary between the upper surfaces 40A of the flow path plates 40 and the heat conduction plates 11; spacer members 41 disposed opposite back surfaces 40B of the flow path plates 40 and disposed in at least a part of a region under the seal members 47; and bolts 60 and nuts 61 fastening the pair of flow path plates 40 and the pair of heat conduction plates 11 overlapped with each other. The compressive strength of the spacer members 41 is greater than that of the flow path plates 40.
A temperature control system includes: first adjusting the temperature of fluid in a first portion the fluid having a first temperature determined based on a second temperature higher than the first temperature or the second temperature; second adjusting the temperature of the fluid supplied to a target at a second portion between the first portion and the target; first detecting the temperature of first fluid supplied from the first to second portion; second detecting the temperature of the fluid or the target at a predetermined position between an outlet of the second portion and an inlet of the first portion; controlling the first adjusting based on the first detected value such that the temperature of the first fluid becomes a first temperature; and controlling the second adjusting based on a the second detected such that the temperature of the fluid becomes a second temperature at the predetermined position.
G05B 11/42 - Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential for obtaining a characteristic which is both proportional and time-dependent, e.g. P. I., P. I. D.
G05D 23/19 - Control of temperature characterised by the use of electric means
G05D 23/22 - Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element being a thermocouple
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A residual charge removal device includes: a power storage unit; a first switching unit that is connected to a target to which electric power is supplied from a power supply device, and operates to remove a residual charge of the target by electric power supplied from the power storage unit; and a second switching unit that operates to supply electric power from the power storage unit to the first switching unit when electric power supply to the target is stopped.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
A wireless terminal includes a memory that stores a parameter, a microcomputer that operates in an operation mode, which is predetermined, on the basis of the parameter, and a wireless communication device that wirelessly receives a change command of the parameter. When the change command is wirelessly received, the microcomputer suspends the operation and changes the parameter on the basis of the change command.
H04B 1/38 - Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
H02J 50/00 - Circuit arrangements or systems for wireless supply or distribution of electric power
A thermoelectric generation device includes: a first substrate having a first surface; a second substrate having a second surface facing the first surface; a plurality of thermoelectric generation modules each of which has a plurality of thermoelectric elements and electrodes connecting the thermoelectric elements and which is arranged between the first surface and the second surface; and wiring that is arranged on the first surface and that connects the plurality of thermoelectric generation modules.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
A thermoelectric power generator includes: a thermoelectric power generation module that includes a heat receiver and a heat dissipater and generates electric power by a temperature difference between the heat receiver and the heat dissipater; a cooling device that cools the heat dissipater; and a control device. The generated power of the thermoelectric power generation module is distributed to consumption power used in the cooling device and effective power used in an external load. The control device includes: a monitoring unit that monitors a state of the cooling device and outputs monitoring data; an adjustment unit capable of adjusting the effective power supplied to the external load; and a control command unit that outputs a control command that controls an adjustment unit based on the monitoring data.
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
A thermoelectric module includes a substrate; a thermoelectric element; a bonding portion including an electrode that bonds the substrate and the thermoelectric element; an organic material film that covers a front surface of the bonding portion; and an inorganic material film that covers the organic material film.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
A temperature control system includes a circulation channel including a temperature control target to be temperature-controlled via a fluid, a heater capable of heating the fluid, and a cooler capable of cooling the fluid, a bypass channel connected to each of a first portion of the circulation channel located upstream of the cooler and a second portion of the circulation channel located downstream of the cooler to bypass the cooler, a valve device capable of controlling a flow rate of the fluid flowing through the cooler and a flow rate of the fluid flowing through the bypass channel individually, and a control device. The control device includes a valve controller configured to control the valve device to make a temperature of the fluid at the second portion equal to a predetermined temperature.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A thermoelectric generator includes a thermoelectric generation module, a power storage unit configured to store electric charge generated from the thermoelectric generation module, a switching unit configured to switch between supply and stop of discharge to a transceiver (transmission/reception unit) driven by discharge from the power storage unit, and a determination unit configured to determine stop of discharge from the power storage unit, in which the determination unit determines stop of discharge before completion of discharge from the power storage unit.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
A thermoelectric module includes a thermoelectric element disposed between a pair of electrodes, and an anchor layer disposed between the electrode and the thermoelectric element and connected with the thermoelectric element.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
A processing liquid temperature control apparatus includes a block body with an integral structure made of a silicon carbide sintered body, the block body having a flow path through which a semiconductor processing liquid flows, and a temperature adjustment portion provided at the block body to adjust a temperature of the semiconductor processing liquid flowing through the flow path. Accordingly, it is possible to reduce the number of parts and achieve compactness and cost reduction. In addition, it is possible to enhance heat conduction between the processing liquid and the temperature adjustment portion, and improve heat exchange efficiency.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
28.
Temperature control device for semiconductor wafer and temperature control method for semiconductor wafer
A temperature control device for a semiconductor wafer includes a placement part having a placement surface on which a semiconductor wafer is placed and having a plurality of regions in which the placement surface is partitioned in a plan view, a temperature adjustment part configured to independently adjust a temperature of the placement part for each of the plurality of regions, a plurality of temperature detection parts provided in at least one of the plurality of regions and configured to detect a temperature of the region of which the temperature has been adjusted by the temperature adjustment part, and a control part configured to monitor detection temperatures of the plurality of temperature detection parts, to select one having a large temperature change per unit time among a plurality of monitored detection temperatures, and to control the temperature adjustment part based on the selected detection temperature.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A state estimation system includes a thermal load detection unit that detects a thermal load of a device as an object, and an estimation unit that estimates a state of the device on the basis of the thermal load of the device detected by the thermal load detection unit.
G01K 3/04 - Thermometers giving results other than momentary value of temperature giving mean valuesThermometers giving results other than momentary value of temperature giving integrated values in respect of time
G01K 3/06 - Thermometers giving results other than momentary value of temperature giving mean valuesThermometers giving results other than momentary value of temperature giving integrated values in respect of space
G01K 3/08 - Thermometers giving results other than momentary value of temperature giving differences of valuesThermometers giving results other than momentary value of temperature giving differentiated values
G01K 7/04 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using thermoelectric elements, e.g. thermocouples the object to be measured not forming one of the thermoelectric materials
A thermoelectric generator module includes a first base material that is formed into a sheet and that has a thermoplastic layer, a second base material that is formed into a sheet and that has a thermoplastic layer, a plurality of thermoelectric conversion elements arranged between the first base material and the second base material, a plurality of first electrodes arranged between the first base material and the thermoelectric conversion elements, a plurality of second electrodes arranged between the second base material and the thermoelectric conversion elements, and a joint that joins the first base material to the second base material. The thermoelectric conversion elements, the plurality of first electrodes, and the plurality of second electrodes are sealed by the joint.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
A substrate support device includes a placement part formed in a plate shape which extends in a horizontal direction and having a placement surface on which a substrate is placed, and a movable part which makes the placement surface conform to the substrate by moving according to a warpage of the substrate placed on the placement surface. The movable part includes an arm part including an expansion and contraction part which expands and contracts in the horizontal direction according to the warpage of the substrate placed on the placement surface, an arm body having a longitudinal direction in a vertical direction in a state in which the substrate is not placed on the placement surface, and an arm connection part which connects a lower end of the arm body to an outer end of the expansion and contraction part in the horizontal direction.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
32.
Vibration analysis device, vibration analysis system, and vibration analysis method
An analysis device includes a vibration sensor that detects vibration of a machine, a calculation unit that defines a peak value on the basis of a standard deviation of detection data of the vibration sensor, and a wireless communication device that transmits processed data output from calculation performed by the calculation unit.
G01N 29/44 - Processing the detected response signal
G01N 29/14 - Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic wavesVisualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object using acoustic emission techniques
33.
Analysis device, analysis system, and analysis method
An analysis device includes a vibration sensor that detects vibration of a machine, a calculation unit that calculates an average value of detection data of the vibration sensor in each predetermined cycle interval, converts a plurality of data points included in each interval to one data point indicating the average value to reduce calculation points, and performs vibration analysis with the reduced calculation points, and a wireless communication device that transmits processed data output from the vibration analysis performed by the calculation unit.
An electrode connection structure includes a first electrode unit that includes first electrodes formed concentrically, and a second electrode unit that includes a second electrode formed into a needle shape axially movable forward and rearward and is electrically connectable to the first electrode unit, and in the electrode connection structure, the second electrode unit includes a plurality of the second electrodes that is arranged in a circumferential direction and arranged at different radial positions, and the plurality of the second electrodes is electrically connected to the first electrodes arranged at different radial positions, respectively.
A thermoelectric power generation module mounting substrate includes: a printed substrate having a heat transfer through-hole penetrating a first surface and a second surface opposite to the first surface, and being in contact with a housing on the second surface; and a thermoelectric power generation module mounted on the printed substrate in contact with the first surface.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/08 - Structural details of the junction; Connections of leads non-detachable, e.g. cemented, sintered, soldered
A thermoelectric power generation device includes: a high-temperature plate having an upper face; a low-temperature plate having a lower face; a thermoelectric module disposed between the upper face and the lower face; a sealing portion disposed between the upper and lower faces, the sealing portion sealing the thermoelectric module at a circumferential portion of the upper face and a circumferential portion of the lower face; a first positioning portion disposed at the circumferential portion of the upper face; and a second positioning portion disposed at the circumferential portion of the lower face. The first positioning portion positions the sealing portion at the circumferential portion of the upper face, and the second positioning portion positions the sealing portion at the circumferential portion of the lower face.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
A thermoelectric module includes a substrate, an electrode provided on a first surface of the substrate, a thermoelectric element, and a first diffusion prevention layer disposed between the electrode and the thermoelectric element. The first diffusion prevention layer includes a first material having a lower ionization tendency than that of hydrogen.
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
38.
THERMOELECTRIC GENERATOR AND VIBRATION DETECTION SYSTEM
A thermoelectric generator includes: a thermoelectric generator module; a vibration sensor driven by power generated by the thermoelectric generator module; and a wireless communication device that transmits detection data of the vibration sensor.
G01P 15/18 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration in two or more dimensions
G01K 1/14 - SupportsFastening devicesArrangements for mounting thermometers in particular locations
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
This temperature control system comprises: a circulation flow path, which includes a temperature-adjustment subject and through which flows a circulating fluid that adjusts the temperature of the temperature-adjustment subject; a temperature adjuster that is positioned in the circulation flow path and that adjusts the temperature of the circulating fluid supplied to the temperature-adjustment subject; a first temperature adjustment unit that is connected to the circulation flow path via a first supply flow path and that sends out a first fluid at a first temperature; a second temperature adjustment unit that is connected to the circulation flow path via a second supply flow path and that sends out a second fluid at a second temperature higher than the first temperature; a first valve that is positioned in the first supply flow path; and a second valve that is positioned in the second supply flow path. The second valve is an electromagnetic valve, the second valve opening the second supply flow path when a set temperature for the temperature-adjustment subject has changed from a first set temperature to a second set temperature higher than the first set temperature, and subsequently closing the second supply flow path.
A thermoelectric generator includes: a heat-receiving plate having a heat-receiving surface configured to receive radiant heat; a thermoelectric generation module provided to a surface of the heat-receiving plate opposite from the heat-receiving surface and having an area smaller than an area of the heat-receiving plate; a cooling plate provided to a surface of the thermoelectric generation module opposite from a surface where the heat-receiving plate is provided; and a temperature equalizer provided to the heat-receiving plate and configured to equalize a temperature of the heat-receiving surface.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
A substrate processing apparatus includes a chamber which has a processing room in which a substrate is processed, a cover which is provided in the processing room and is provided between the substrate and the chamber, and a heater which is provided only on the cover among the chamber and the cover and heats the cover.
A temperature control device includes a smoother including a smoothing channel through which fluid from a first inlet flows, and a first outlet from which the fluid flowed through the smoothing channel flows out, the smoother making a temperature fluctuation amount of the fluid in the first outlet smaller than that in the first inlet, a thermoregulator including a second inlet into which the fluid from the first outlet flows, a thermoregulating channel through which the fluid from the second inlet flows, a thermoregulating unit regulating a temperature of the fluid flowing through the thermoregulating channel, and a second outlet from which the fluid flowed through the thermoregulating channel flows out, calculating a temperature regulation amount of the thermoregulating unit, based on temperature of the fluid in the smoothing channel, and calculating the temperature regulation amount, based on temperature of the fluid at a position downstream of the second outlet.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G05D 23/19 - Control of temperature characterised by the use of electric means
F24H 15/414 - Control of fluid heaters characterised by the type of controllers using electronic processing, e.g. computer-based
A wafer temperature adjusting device (1A) is provided with a temperature adjusting sheet (2A) and a top plate (3). The temperature adjusting sheet (2A) has a plurality of temperature adjusting portions (21). The plurality of temperature adjusting portions (21) are divided from each other via a dividing region (22) in the same plane. Each of the plurality of temperature adjusting portions (21) is independently temperature-adjustable. The top plate (3) has a plate body (31) stacked on the temperature adjusting sheet (2A). A surface of the plate body (31) opposite the temperature adjusting sheet (2A) constitutes a semiconductor wafer mounting surface (31f). The top plate (3) has a heat insulating portion (32). The heat insulating portion (32), when viewed from a stacking direction (Ds) of the temperature adjusting sheet (2A) and the top plate (3), is disposed in a position corresponding to the dividing region (22) in the plate body (31). The heat insulating portion (32) has a thermal conductivity smaller than that of the plate body (31).
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
44.
Temperature regulation device and temperature regulation method
A temperature regulation device includes: a first temperature regulation unit that regulates a temperature of a liquid; and a second temperature regulation unit that regulates a temperature of the liquid supplied from the first temperature regulation unit. The first temperature regulation unit includes: a first flow path module having a first flow path of the liquid; and a base module that regulates a temperature of the liquid of the first flow path. The second temperature regulation unit includes: a second flow path module having a second flow path in which the liquid from the first flow path flows; and a Peltier module that regulates a temperature of the liquid of the second flow path. The base module regulates a temperature of the Peltier module.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
45.
Temperature control system and temperature control method
To control the temperature of a fluid with high accuracy, a temperature control system is equipped with: a circulation channel including a temperature control target and a tank containing a fluid adjusted to a specified temperature range including a target temperature of the temperature control target; and a first temperature controller that is arranged between the tank and the temperature control target in the circulation channel and that adjusts the temperature of the fluid to be supplied to the temperature control target.
A temperature control device includes: a top plate that supports a substrate; a base plate connected to the top plate so as to form an internal space with the top plate; a thermoelectric module plate arranged in the internal space; a heat exchange plate that is arranged in the internal space and exchanges heat with the thermoelectric module plate; and a sealing member that comes into contact with each of the top plate and the base plate.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A thermoelectric power generation module includes two substrates, a thermoelectric conversion element, a sealing portion sealing peripheral edges of upper and lower surfaces, a first solder between the upper surface and the sealing portion, and a second solder between the lower surface and the sealing portion. At least one of outer and inner edges of the first solder or the sealing portion is deviated from the first solder or the sealing portion. At least one of outer and inner edges of the second solder or the sealing portion is deviated from the second solder or the sealing portion. At least one of the outer and inner edges of the first solder has a fillet shape between the upper surface and the sealing portion. At least one of the outer and inner edges of the second solder has a fillet shape between the lower surface and the sealing portion.
A thermoelectric generation module includes a first substrate and a second substrate, a plurality of first electrodes and second electrodes that are arranged on the first substrate and the second substrate, a thermoelectric conversion element arranged between the first electrode and the second electrode, and a terminal pin connected to the second electrode. The second substrate includes an insulator layer made of an electrical insulating material, a through-hole that penetrates the insulator layer for insertion of the terminal pin, and an annular metal layer arranged at a peripheral portion of the through-hole. A space between the terminal pin and the through-hole is sealed by solder.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
A thermoelectric generator includes a heat reception portion, a heat release portion, a thermoelectric generation module that is arranged between the heat reception portion and the heat release portion, and a heat transfer mechanism that includes a first connection portion configured to be connected to the thermoelectric generation module and a second connection portion configured to be connected to at least one of the heat reception portion and the heat release portion, the heat transfer mechanism being at least partially resiliently deformed.
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
A temperature adjustment device includes: a pair of flow path plates, each of the pair of flow path plates including a flow path groove provided on a front surface of the each of the pair of flow path plates and at least a part of the front surface; a spacer member that includes a support surface projecting from the front surface, and connects the pair of flow path plates such that a back surface of one of the pair of flow path plates and a back surface of the other of the pair of flow path plate face each other; and a heat transfer plate that faces the flow path groove, and is supported by the support surface.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A temperature control device includes: a top plate that supports a substrate; a base plate connected to the top plate so as to form an internal space with the top plate; a thermoelectric module plate arranged in the internal space; a heat exchange plate that is arranged in the internal space and exchanges heat with the thermoelectric module plate; a first coupling member that couples the top plate and the base plate via the thermoelectric module plate and the heat exchange plate and is fixed to each of the top plate and the base plate; and a second coupling member that couples the top plate and the base plate via the thermoelectric module plate and the heat exchange plate, is fixed to the top plate, and is movable relative to the base plate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
52.
Thermoelectric module and adjustment method of thermoelectric module
A thermoelectric module includes a substrate, a plurality of electrodes arranged on a surface of the substrate, a plurality of thermoelectric elements respectively connected to the plurality of electrodes, and at least three terminals respectively connected to the different electrodes and connected to one or both of a first load and a second load.
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
A detection device that is capable of being attached to a through hole includes a main body portion, a detection portion, a cover portion, an insulation portion, and an oscillation portion. The main body portion has an insertion portion and a head portion. The detection portion is arranged in the insertion portion and detects the state of a fluid. The cover portion is arranged so as to form a gap with the head portion. The insulating portion has a lateral wall having a cylindrical shape. An oscillation portion is accommodated inside the insulation portion, and performs a wireless output of a detection result of the detection portion by using the head portion, the cover portion and the gap as a slot antenna.
A thermoelectric generator includes a heat-receiving plate having a heat-receiving surface for receiving flame and high-temperature combustion gas, a thermoelectric generation module disposed at a surface of the heat-receiving plate opposite the heat-receiving surface, a cooling plate disposed at a side of the thermoelectric generation module opposite the heat-receiving plate, a cover disposed to cover the heat-receiving surface and including a heat inlet for introducing the flame and the high-temperature combustion gas and a heat outlet for discharging the temperature-reduced combustion gas introduced through the heat inlet, a heat diffuser provided on the heat-receiving surface at a position corresponding to the heat inlet and configured to diffuse the combustion gas introduced through the heat inlet along the heat-receiving surface, and a heat absorber provided on the heat-receiving surface to surround the heat diffuser and configured to absorb the heat of the high-temperature combustion gas diffused by the heat diffuser.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
55.
Temperature adjustment device and method for manufacturing temperature adjustment device
A temperature adjustment device includes a flow path plate that includes a flow path groove, a heat transfer plate that faces the flow path groove, and a thermoelectric module plate that is connected to the heat transfer plate. A surface roughness of the flow path plate is 0.20 μm or more and 0.25 μm or less.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A thermoelectric module includesa plurality of electrodes (high temperature side electrodes and low temperature side electrodes, thermoelectric conversion elements (p-type element and n-type element) arranged between the two electrodes, and a bonding layer disposed between the electrodes and the thermoelectric conversion elements. The bonding layer includes copper-containing particles, copper balls each having a particle diameter of 30 μm or more, an intermetallic compound of copper and tin, and a fired resin.
A detection device includes a vibration sensor configured to detect vibration of a machine, a calculation unit configured to perform FFT analysis on detection data of the vibration sensor, divide a specific frequency range into a plurality of frequency ranges, and calculate a partial overall value for each of the plurality of frequency ranges, and a wireless communication device configured to transmit the partial overall value.
G01N 29/46 - Processing the detected response signal by spectral analysis, e.g. Fourier analysis
G01N 29/14 - Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic wavesVisualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object using acoustic emission techniques
A thermoelectric power generation device comprises: a first substrate having a first surface; a second substrate having a second surface that faces the first surface; a plurality of thermoelectric power generation modules, each having a plurality of thermoelectric elements and an electrode that connects the thermoelectric elements, the plurality of thermoelectric power generation modules being positioned between the first surface and the second surface; and wiring that is positioned on the first surface and that connects the plurality of thermoelectric power generation modules.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
This temperature control system comprises: a circulation flow path which includes a temperature control target and through which a fluid flows; a first temperature control device which adjusts the temperature of the fluid in a first part by supplying the first part of the circulation flow path with at least one among a fluid having a first temperature and a fluid having a second temperature higher than the first temperature; a second temperature control device which adjusts the temperature of the fluid supplied to the temperature control target in a second part of the circulation flow path between the first part and the temperature control target; a first temperature sensor which detects the temperature of the fluid supplied from the first part to the second part; a second temperature sensor which detects the temperature of the fluid or the temperature control target at a predetermined position in the circulation flow path between the outlet of the second part and the inlet of the first part; a first controller which controls the first temperature control device such that the fluid supplied from the first part to the second part reaches a first target temperature, on the basis of the detected value of the first temperature sensor; and a second controller which controls the second temperature control device such that the fluid reaches a second target temperature at a predetermined position, on the basis of the detection value of the second temperature sensor. The first target temperature is determined on the basis of the second target temperature.
G05D 23/19 - Control of temperature characterised by the use of electric means
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
This residual charge removing device is provided with: an electricity storage unit; a first switching unit which is connected to a target to which electric power from a power source device is to be supplied, and which operates in such a way that residual charge on the target is removed by electric power being supplied from the electricity storage unit; and a second switching unit which operates in such a way that electric power is supplied from the electricity storage unit to the first switching unit when the supply of electric power to the target is stopped.
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
H02H 3/02 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection Details
H02J 7/34 - Parallel operation in networks using both storage and other DC sources, e.g. providing buffering
H02J 1/00 - Circuit arrangements for dc mains or dc distribution networks
H01L 35/28 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
This thermoelectric power generation device is provided with: a thermoelectric power generation module which includes a heat receiving unit and a heat dissipation unit, and generates power by means of a temperature difference between the heat receiving unit and the heat dissipation unit; a cooling device which cools the heat dissipation unit; and a control device. The generated power of the thermoelectric power generation module is distributed into consumption power to be used for a cooling device and effective power to be used for an external load. A control device includes: a monitoring unit which monitors the state of the cooling device and outputs monitoring data; an adjustment unit which can adjust the effective power to be supplied to the external load; and a control command unit which outputs a control command for controlling the adjustment unit on the basis of the monitoring data.
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
62.
Method for manufacturing thermoelectric conversion element and thermoelectric conversion element
A method for manufacturing a thermoelectric conversion element includes forming a thermoelectric film containing a thermoelectric material on a surface of a substrate, pressing the thermoelectric film with a mold to form a pattern of the thermoelectric film on the surface of the substrate, and heating the pattern of the thermoelectric film formed on the surface of the substrate to generate the thermoelectric conversion element.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
This thermoelectric module comprises: a substrate; a thermoelectric element; a joining portion including an electrode and joining the substrate and the thermoelectric element; an organic material film that covers the surface of the joining portion; and an inorganic material film that covers the organic material film.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
H01L 35/08 - Structural details of the junction; Connections of leads non-detachable, e.g. cemented, sintered, soldered
This thermoelectric module comprises: a lower substrate; an upper substrate arranged above and opposing the lower substrate; a plurality of p-type and n-type thermoelectric elements arranged between the lower substrate and the upper substrate; first electrodes which are arranged on a lower surface of the lower substrate and an upper surface of the upper substrate and form a series circuit by alternately sequentially connecting the p-type and n-type thermoelectric elements; and a second electrode which is provided on the lower substrate and connects the thermoelectric element at the end of the series circuit to a post. The post includes a post body formed from titanium and a titanium passive film that covers a side surface of the post body.
A fluid heating device includes a container in which fluid is supplied between an inner surface of an outer cylindrical member and outer surfaces of the inner cylindrical members, lamp heaters arranged in an inner cylindrical members, a nozzle member arranged on a leading end side of the lamp heaters and having an air supply port, and a guide mechanism that guides gas supplied from the air supply port of the nozzle member. The inner cylindrical members include a central inner cylindrical member arranged at a center of the outer cylindrical member, and peripheral inner cylindrical members arranged around the central inner cylindrical member. The lamp heaters include a central lamp heater arranged in the central inner cylindrical member and peripheral lamp heaters respectively arranged in the peripheral inner cylindrical members. The guide mechanism guides the gas to a leading end side of the central lamp heater.
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
B08B 3/10 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
F24H 1/12 - Continuous-flow heaters, i.e. heaters in which heat is generated only while the water is flowing, e.g. with direct contact of the water with the heating medium in which the water is kept separate from the heating medium
F24H 1/14 - Continuous-flow heaters, i.e. heaters in which heat is generated only while the water is flowing, e.g. with direct contact of the water with the heating medium in which the water is kept separate from the heating medium by tubes, e.g. bent in serpentine form
H05B 3/08 - Heater elements structurally combined with coupling elements or with holders having electric connections specially adapted for high temperatures
B08B 3/04 - Cleaning involving contact with liquid
B08B 3/14 - Removing waste, e.g. labels, from cleaning liquid
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A thermoelectric power generation device 1 is provided with: a thermoelectric power generation module 7; an electricity storage unit 21 for storing the charge generated from the thermoelectric power generation module 7; a switching unit 23 for switching between discharging to a transceiver (transmitting and receiving unit) 20 driven by discharging from the electricity storage unit 21 and the stop of discharging; and a determination unit 15 for determining the stop of discharging from the electricity storage unit 21. The determination unit 15 determines the stop of discharging before the completion of discharging from the electricity storage unit 21.
A liquid heating device includes a circulation flow path that is connected to a branch flow path through which a first liquid supplied to an object flows, a heating device that is disposed in the circulation flow path and heats the first liquid flowing through the circulation flow path, and a cooling device that cools the first liquid flowing through the circulation flow path in a state where supply of the first liquid to the object is stopped.
B08B 3/10 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
A fluid heating device includes: a tank to store a fluid; a pump to deliver the fluid stored in the tank; a heater to heat the delivered fluid to a predetermined temperature; a return pipe to return the heated fluid to the tank; a fluid supply valve to supply an unheated fluid into the tank; a fluid discharge valve to discharge the heated fluid from the tank; a temperature sensor to detect a temperature of the heated fluid; and a temperature controller to control an opening degree of each of the fluid supply valve and the fluid discharge valve to control the temperature of the fluid stored in the tank. The temperature controller includes: a discharge opening-degree controller-to control the opening degree of the fluid discharge valve; and a supply opening-degree controller to control the opening degree of the fluid supply valve.
B08B 3/10 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
69.
THERMOELECTRIC MODULE, AND METHOD FOR MANUFACTURING THERMOELECTRIC MODULE
This thermoelectric module is provided with a thermoelectric element disposed between a pair of electrodes, and an anchor layer disposed between the electrodes and the thermoelectric element and connected to the thermoelectric element.
The present invention suppresses energy consumption in the temperature adjustment of a temperature adjustment target. This temperature control system (1A) comprises: a circulation flow path (5) that includes a temperature adjustment target (100) of which the temperature is adjusted by fluid (F), a heating device (2) that can heat the fluid, and a cooling device (3) that can cool the fluid; a bypass flow path (8) that is connected to each of a first part (6) of the circulation flow path upstream of the cooling device and a second part (7) of the circulation flow path downstream of the cooling device, and bypasses the cooling device; a valve device (9) that can adjust the flow rate of the fluid passing through the cooling device and the flow rate of the fluid passing through the bypass flow path; and a control device. The control device has a valve control unit for controlling a valve device such that the temperature of the fluid in the second part becomes a specified temperature.
A state estimation system 1 comprises: a thermal load detection unit 200 that detects the thermal load of an apparatus serving as an object; and an estimation unit 104 that estimates the state of the apparatus on the basis of the thermal load of the apparatus as detected by the thermal load detection unit 200.
G01K 1/02 - Means for indicating or recording specially adapted for thermometers
G01K 3/08 - Thermometers giving results other than momentary value of temperature giving differences of valuesThermometers giving results other than momentary value of temperature giving differentiated values
Provided is a thermoelectric module (1) comprising: substrates (2); electrodes (4) disposed on first surfaces (2A) of the substrates; thermoelectric elements (3); and first diffusion prevention layers (5) positioned between the electrodes and the thermoelectric elements. The first diffusion prevention layers include a first material which has a lower ionization tendency than hydrogen.
H01L 35/08 - Structural details of the junction; Connections of leads non-detachable, e.g. cemented, sintered, soldered
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
73.
THERMOELECTRIC POWER GENERATION DEVICE AND VIBRATION DETECTION SYSTEM
This thermoelectric power generation device comprises a thermoelectric power generation module, a vibration sensor that is driven by the electrical power generated by the thermoelectric power generation module, and a wireless communication device for transmitting detection data from the vibration sensor.
G01H 1/00 - Measuring vibrations in solids by using direct conduction to the detector
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
G01M 99/00 - Subject matter not provided for in other groups of this subclass
H02K 11/20 - Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection for measuring, monitoring, testing, protecting or switching
74.
TEMPERATURE CONTROL SYSTEM AND TEMPERATURE CONTROL METHOD
This temperature control system is equipped with: a circulation flow path that includes an object for temperature regulation, and a tank accommodating a fluid that is adjusted to a specified temperature range which includes a target temperature of the object for temperature regulation; and a first temperature regulator that is arranged between the tank and the object for temperature regulation in the circulation flow path and regulates the temperature of the fluid supplied to the object for temperature regulation.
A temperature control device equipped with: a smoothing device that has a first inlet into which a fluid flows, a smoothing flow passage through which the fluid flowing in from the first inlet flows, and a first outlet through which the fluid that has flowed through the smoothing flow passage flows out, and that reduces the amount of temperature deviation of the fluid at the first outlet to less than the amount of temperature deviation of the fluid at the first inlet; a temperature adjuster that has a second inlet into which fluid flowing out from the first outlet flows, a temperature adjustment flow passage through which the fluid flowing in from the second inlet flows, a temperature adjustment unit for adjusting the temperature of the fluid flowing through the temperature adjustment flow passage, and a second outlet through which the fluid that has flowed through the temperature adjustment flow passage flows out; a first temperature sensor for detecting the temperature of the fluid at a first position that has been set in the smoothing flow passage; a second temperature sensor for detecting the temperature of the fluid at a second position downstream from the second outlet; a feed-forward control unit for calculating an amount of the temperature adjustment by the temperature adjustment unit on the basis of detection data from the first sensor; and a feedback control unit for calculating an amount of the temperature adjustment by the temperature adjustment unit on the basis of detection data from the second sensor.
G05D 23/19 - Control of temperature characterised by the use of electric means
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
76.
THERMOELECTRIC MODULE AND METHOD FOR ADJUSTING THERMOELECTRIC MODULE
This thermoelectric module (2) is provided with: a substrate (21); a plurality of electrodes (23) arranged on the surface (21S) of the substrate; a plurality of thermoelectric elements (25) connected to the plurality of electrodes, respectively; and at least three terminals (81, 82, 83) connected to different electrodes, respectively, and to one or both of a first load (7) and a second load (6).
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/28 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
A thermoelectric power generation device comprising: a heat-receiving part; a heat-dissipating part; a thermoelectric power generation module arranged between the heat-receiving part and the heat-dissipating part; and a heat transfer mechanism, which has a first connection part connected to the thermoelectric power generation module, and a second connection part connected to the heat-receiving part and/or the heat-dissipating part, and at least a portion of which undergoes elastic deformation.
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
A thermoelectric module of the invention includes: first and second thermoelectric elements; a first electrode having a plate-shaped body whose first surface is bonded to a first end surface of the first thermoelectric element and a first end surface of the second thermoelectric element; a second electrode bonded to a second end surface of the first thermoelectric element; and a third electrode bonded to a second end surface of the thermoelectric element. The first electrode includes: a first cutout formed at a first side in a width direction; and a second cutout formed at a second side in the width direction. In the width direction, at least one of the first cutout or the second cutout is present in a section between the first side and the second side of the first electrode.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
B29C 43/02 - Compression moulding, i.e. applying external pressure to flow the moulding materialApparatus therefor of articles of definite length, i.e. discrete articles
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
This temperature control device is provided with: a pair of flow channel plates having flow channel grooves provided in the obverse surface and at at least a portion of the obverse surface, respectively; spacer members that each have a support surface projecting from the obverse surface and that couple the pair of flow channel plates such that the reverse surface of one of the flow channel plate and the reverse surface of the other flow channel plate face each other; and a heat transfer plate that faces the flow channel grooves and that is supported by the support surface.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
80.
TEMPERATURE CONTROL DEVICE AND PRODUCTION METHOD FOR TEMPERATURE CONTROL DEVICE
This temperature control device is provided with: flow channel plates having flow channel grooves; heat transfer plates facing the flow channel grooves; and a thermoelectric module plate connected to the heat transfer plate. The surface roughness of the flow channel plates is 0.20-0.25 [μm].
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
A thermoelectric generator transmitter includes: a hollow exterior frame having open ends; a heat-receiving plate covering one of the open ends of the exterior frame; a columnar member standing on the heat-receiving plate; a thermoelectric generation module arranged for facilitating heat transfer between the columnar member and the thermoelectric generation module; a radiator plate covering a part of the other one of the open ends of the exterior frame, the part corresponding to a location of the thermoelectric generation module; a processor drivable by electricity generated by the thermoelectric generation module and capable of outputting a detection signal detected by a sensor to an external device; and a terminal that receives the detection signal of the sensor from the external device. An inside of the exterior frame is divided into a location of the thermoelectric generation module and the processor and a location of the terminal.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
G01K 7/02 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using thermoelectric elements, e.g. thermocouples
G01K 1/024 - Means for indicating or recording specially adapted for thermometers for remote indication
G01K 1/02 - Means for indicating or recording specially adapted for thermometers
G01K 1/12 - Protective devices, e.g. casings for preventing damage due to heat overloading
G01K 13/08 - Thermometers specially adapted for specific purposes for measuring temperature of moving solid bodies in rotary movement
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
H01L 35/28 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only
A temperature control device comprising: a top plate supporting a substrate; a base plate connected to the top plate so as to form an internal space therebetween; a thermoelectric module plate arranged in the internal space; a heat exchange plate arranged in the internal space and exchanging heat with the thermoelectric module plate; and a sealing member in contact with both the top plate and the base plate.
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
A temperature control device comprising: a top plate supporting a substrate; a base plate connected to the top plate so as to form an internal space therebetween; a thermoelectric module plate arranged in the internal space; a heat exchange plate arranged in the internal space and exchanging heat with the thermoelectric module plate; a first joining member that joins the top plate and the base plate via the thermoelectric module plate and the heat exchange plate and is fixed to both the top plate and the base plate; and a second joining member that joins the top plate and the base plate via the thermoelectric module plate and the heat exchange plate, is fixed to the top plate, and is movable relative to the base plate.
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
A thermoelectric generator includes a heat-receiving plate including a heat-receiving surface, a first heat conductor disposed on a surface of the heat-receiving plate opposite the heat-receiving surface and configured to transfer heat received by the heat-receiving plate, a thermoelectric generation module disposed on a surface of the heat conductor opposite the heat-receiving plate, a second heat conductor disposed on a surface of the thermoelectric generation module opposite the first heat conductor, and a cooling plate disposed on the thermoelectric generation module opposite the heat conductor, at least a part of an outer periphery of the first heat conductor being located inside a region corresponding to a pair of a P-type thermoelectric element and an N-type thermoelectric element disposed to an outer periphery of the thermoelectric generation module.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/04 - Structural details of the junction; Connections of leads
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
A detection device (1A) attachable to a through-hole (H) is provided with: a body (2); a detection part (3); a lid (4); an insulation part (5A); and an oscillation part (6). The body (2) has an insertion part (11) and a head (12). The detection part (3) is disposed in the insertion part (11), and detects the state of a fluid. The lid (4) is disposed so as to form a gap (G) from the head (12). The insulation part (5A) has a cylindrical side wall (5a). The oscillation part (6) is housed inside the insulation part (5A), and the detection result of the detection part (3) is wirelessly outputted with the head (12), the lid (4), and the gap (G) serving as a slot antenna.
H01Q 1/44 - Details of, or arrangements associated with, antennas using equipment having another main function to serve additionally as an antenna
H01Q 21/20 - Arrays of individually energised antenna units similarly polarised and spaced apart the units being spaced along, or adjacent to, a curvilinear path
This thermoelectric module 1 comprises: a plurality of electrodes (a high temperature side electrode 11 and low temperature side electrodes 12); thermoelectric conversion elements (p-type element 21 and n-type element 22) placed between two electrodes; and bonding layers 30 provided between the electrodes and the thermoelectric conversion elements, wherein the bonding layers 30 include copper-containing particles, a copper ball having a particle diameter of 30 µm or greater, an intermetallic compound of copper and tin, and a resin fired product.
This manufacturing method of a thermoelectric conversion element (10) involves: forming a thermoelectric film (F) which contains a thermoelectric material on the surface of the substrate (W); pressing the thermoelectric film with a mold (30) to form a thermoelectric film pattern (PA) on the surface of the substrate; and heating the thermoelectric film pattern formed on the surface of the substrate to generate a thermoelectric conversion element.
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
This fluid heating device is provided with: a container having an external cylinder member and an internal cylinder member arranged inside the external cylinder member, a fluid being supplied into a fluid space in the container between the inner peripheral surface of the external cylinder member and the outer peripheral surface of the internal cylinder member; a lamp heater disposed in the internal cylinder member; a first nozzle member disposed on the distal-end side of the lamp heater, the first nozzle member having an air supply opening; and a first guidance mechanism that guides first air supplied from the air supply opening of the first nozzle member. The internal cylinder member includes a central internal cylinder member disposed at the center of the external cylinder member in a plane orthogonal to a center axis of the external cylinder member, and a plurality of peripheral internal cylinder members disposed surrounding the central internal cylinder member. The lamp heater includes a central lamp heater disposed in the central internal cylinder member, and peripheral lamp heaters disposed in each of the plurality of peripheral internal cylinder members. The first guidance mechanism guides the first air to the distal-end side of the central lamp heater.
F24H 1/12 - Continuous-flow heaters, i.e. heaters in which heat is generated only while the water is flowing, e.g. with direct contact of the water with the heating medium in which the water is kept separate from the heating medium
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
This liquid heating device is provided with: a circulation flow passage connected to a branch flow passage through which first liquid to be supplied to an object flows; a heating device disposed in the circulation flow passage and heating the first liquid flowing through the circulation flow passage; and a cooling device which, while the supply of the first liquid to the object is stopped, cools the first liquid flowing through the circulation flow passage.
09 - Scientific and electric apparatus and instruments
Goods & Services
Installations for generating electricity using waste heat;
installations for generating electricity; modules for
generating electricity using waste heat as parts and
accessories of industrial robots, apparatus for machining,
electronic-component manufacturing machines and systems,
semiconductor manufacturing machines and systems; modules
for generating electricity as parts and accessories of
industrial robots, apparatus for machining,
electronic-component manufacturing machines and systems,
semiconductor manufacturing machines and systems. Thermoelectric conversion elements using waste heat;
thermoelectric conversion elements; monitoring apparatus
using energy harvesting technology by modules for generating
electricity using waste heat, other than for medical
purposes; sensors [measurement apparatus] using energy
harvesting technology by modules for generating electricity
using waste heat, other than for medical purposes;
stand-alone electric power source unit using modules for
generating electricity using waste heat; chargers using
modules for generating electricity using waste heat;
electrical power distribution apparatus using modules for
generating electricity using waste heat; computer software
for energy harvesting; remote control telemetering machines
and instruments; apparatus for wireless transmission;
telecommunication machines and apparatus; sensors
[measurement apparatus] other than for medical purposes;
measuring or testing machines and instruments; heat
regulating apparatus; electrical power supplies; battery
chargers; cell phone battery chargers; battery chargers for
use with telephones; electrical power distribution
apparatus; electric control devices for energy management;
batteries and cells; electronic machines, apparatus and
their parts; computer programs.
This thermoelectric generator is provided with: a thermoelectric generator module; a fan roratable about a rotational axis and disposed on one side of the thermoelectric generator module in a first axial direction parallel with the rotational axis; a cover member having a facing plate disposed on one side of the fan in the first axial direction and facing the fan and a side plate disposed around the fan from one side toward the other side of the fan; a first inlet provided in the facing plate; a second inlet provided in the side plate and at least partially disposed on the one side with respect to the fan in the first axial direction; and an outlet provided in the side plate and disposed on the other side with respect to the fan in the axial direction.
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
09 - Scientific and electric apparatus and instruments
Goods & Services
Installations for generating electricity using waste heat;
installations for generating electricity; modules for
generating electricity using waste heat as parts and
accessories of industrial robots, apparatus for machining,
electronic-component manufacturing machines and systems,
semiconductor manufacturing machines and systems; modules
for generating electricity as parts and accessories of
industrial robots, apparatus for machining,
electronic-component manufacturing machines and systems,
semiconductor manufacturing machines and systems. Thermoelectric conversion elements using waste heat;
thermoelectric conversion elements; monitoring apparatus
using energy harvesting technology by modules for generating
electricity using waste heat, other than for medical
purposes; sensors [measurement apparatus] using energy
harvesting technology by modules for generating electricity
using waste heat, other than for medical purposes;
stand-alone electric power source unit using modules for
generating electricity using waste heat; chargers using
modules for generating electricity using waste heat;
electrical power distribution apparatus using modules for
generating electricity using waste heat; computer software
for energy harvesting; remote control telemetering machines
and instruments; apparatus for wireless transmission;
telecommunication machines and apparatus; sensors
[measurement apparatus] other than for medical purposes;
measuring or testing machines and instruments; heat
regulating apparatus; electrical power supplies; battery
chargers; cell phone battery chargers; battery chargers for
use with telephones; electrical power distribution
apparatus; electric control devices for energy management;
batteries and cells; electronic machines, apparatus and
their parts; computer programs.
An optical sensor is provided, in which members forming an optical path can be reliably supported without blocking the optical path extending from a light source to a light receiver. An optical sensor includes a light source configured to emit light, and a light receiver configured to receive the light emitted from the light source. An optical path extending from the light source to the light receiver extends through an oil infiltrating space into which oil infiltrates. The optical sensor further includes: a substrate on which the light source is mounted; a substrate on which the light receiver is mounted; a fixing member including an accommodation space in which the substrates are accommodated; and a sealing resin contained in the accommodation space and sealing the substrate.
09 - Scientific and electric apparatus and instruments
Goods & Services
Electric power generators for generating electricity using waste heat; electric power generators for generating electricity; modules for generating electricity in the nature of electric generators using waste heat as parts and accessories of industrial robots, apparatus for machining, electronic-component manufacturing machines and systems, semiconductor manufacturing machines and systems; modules for generating electricity in the nature of electric generators as parts and accessories of industrial robots, apparatus for machining, electronic-component manufacturing machines and systems, semiconductor manufacturing machines and systems Thermoelectric conversion elements using waste heat, namely, thermoelectric modules for generating electricity and exhaust heat recovery being modules for generating electricity using Seebeck effect; thermoelectric conversion elements, namely, thermoelectric modules for generating electricity and exhaust heat recovery being modules for generating electricity using Seebeck effect; monitoring apparatus using energy harvesting technology by modules for generating electricity using waste heat, other than for medical purposes, namely, thermoelectric modules for generating electricity and exhaust heat recovery being modules for generating electricity using Seebeck effect; thermoelectric measurement apparatus, namely, thermoelectric modules for generating electricity using energy harvesting technology being modules for generating electricity using waste heat, other than for medical purposes; stand-alone thermoelectric power supply unit using modules for generating electricity using waste heat; battery chargers using modules for generating electricity using waste heat; thermoelectrical power distribution units using modules for generating electricity using waste heat; downloadable computer software for energy harvesting; remote control telemetering machines and instruments; telecommunication machines and apparatus, namely, telecommunications transmitters; downloadable computer programs for energy harvesting; all of the foregoing for optical communication devices and all of the foregoing using Seebeck effect
A thermoelectric generation device (1), provided with: a heat-receiving plate (6) having a heat-receiving surface (6A) for receiving a flame and a high-temperature combustion gas; a thermoelectric generation module (7) disposed on the surface on the opposite side from the heat-receiving surface (6A); a cooling plate (5) disposed on the surface of the thermoelectric generation module (7) on the side opposite that on which the heat-receiving plate (6) is disposed; a cover member (4) provided so as to cover the heat-receiving surface (6A), the cover member (4) having a heat introduction port (4A) for introducing the flame or high-temperature combustion gas and heat discharge ports (4B) for discharging the combustion gas that has been introduced from the heat introduction port (4A) and in which the temperature has decreased; a spreading member (10) provided on the heat-receiving surface (6A) and disposed at a position corresponding to the heat introduction port (4A), the spreading member (10) spreading the combustion gas introduced from the heat introduction port (4A) along the heat-receiving surface (6A); and a heat absorption member (11) provided on the heat-receiving surface (6A) so as to enclose the spreading member (10), the heat absorption member (11) absorbing the heat of the high-temperature combustion gas spread by the spreading member (10).
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
A thermoelectric module (10) of the present invention is provided with: first and second thermoelectric elements (1P, 1N); a first electrode (21), which has a board-like main body section (211), and in which a first surface of the main body section (211) is bonded to a first end surface of the first thermoelectric element (1P), and a first end surface of the second thermoelectric element (1N); a second electrode (22A) bonded to a second end surface of the first thermoelectric element (1P); and a third electrode (22B) bonded to a second end surface of the second thermoelectric element (1N). The first electrode (21) has: a first cutout (213A) formed on a first side (211A) in width direction (D2); and a second cutout (213B) formed on a second side (211B) in the width direction (D2). In the width direction (D2), the first cutout (213A) and/or the second cutout (213B) is formed in an area between the first side (211A) and the second side (211B) of the first electrode (21).
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
This thermoelectric generator transmitter is provided with: a cylindrical outer frame (12) having open end faces; a heat receiving plate (13) which covers one end face of the outer frame (12); a columnar member (24) which is disposed upright from the heat receiving plate (13); a thermoelectric generation module (25) which is disposed in such a manner as to facilitate thermal conduction with the columnar member (24); a radiator plate (14) which covers a portion of the other end face of the outer frame (12), the portion corresponding to the disposed position of the thermoelectric generation module (25); an arithmetic processing device (231) which is driven by power generated by the thermoelectric generation module (25) and is capable of outputting to the outside a detection signal detected by a sensor (11); and a terminal (17) to which a detection signal is inputted externally from the sensor (11), wherein the interior of the outer frame (12) is partitioned into a site where the thermoelectric generation module (25) and the arithmetic processing device (231) are disposed and a site where the terminal (17) is disposed.
G08C 15/00 - Arrangements characterised by the use of multiplexing for the transmission of a plurality of signals over a common path
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
This thermoelectric generation device is provided with: a heat reception plate (2) including a heat reception surface (2A); a first heat transfer member (5A) which is disposed on a surface on the opposite side from the heat reception surface (2A), and which transfers heat received by means of the heat reception plate (2); a thermoelectric generation module (4) which is disposed on a surface of the heat transfer member (5A) on the opposite side from the surface on which the heat reception plate (2) is disposed; a second heat transfer member (5) which is disposed on a surface of the thermoelectric generation module (4) on the opposite side from the surface on which the first heat transfer member (5A) is disposed; and a cooling plate (3) which is disposed on a surface of the thermoelectric generation module (4) on the opposite side from the surface on which the heat transfer member (5) is disposed. At least a part of the outer periphery of the heat transfer member (5A) is on the inside of a region corresponding to a pair of a P-type thermoelectric element and an N-type thermoelectric element which are disposed in the outer periphery of the thermoelectric generation module (4).
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 35/34 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
This thermoelectric power-generating device comprises: a heat-receiving plate (2) having a heat-receiving surface (2A) for receiving radiant heat; a thermoelectric power-generating module disposed on a surface facing away from the heat-receiving surface (2A), in a surface area smaller than the surface area of heat-receiving plate (2); a cooling plate disposed on the surface of the thermoelectric power-generating module facing away from the surface whereon the heat-receiving plate (2) is disposed; and a temperature equalization means (22) provided on the heat-receiving plate (2), for equalizing the temperature on the heat-receiving surface (2A).
H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
The present invention is provided with: a tank (3) that stores fluid; a pump (4) that feeds the fluid inside the tank (3); a heater (5) that heats the fed fluid to a predetermined temperature; a return pipe (15) that returns the heated fluid to the tank (3); a fluid supplying valve (6) that supplies the fluid that has not been heated, to the inside of the tank (3); a fluid discharging valve (7) that discharges the heated fluid inside the tank (3); a temperature sensor (9) that detects the temperature of the heated fluid; and a temperature control device (20) that controls the degrees of opening of the fluid supplying valve (6) and the fluid discharging valve (7) to control the temperature of the fluid inside the tank (3). The temperature control device (20) is provided with: a discharge degree-of-opening control unit that controls the degree of opening of the fluid discharging valve (7) on the basis of the temperature detected by the temperature sensor (9); and a supply degree-of-opening control unit that controls the degree of opening of the fluid supplying valve on the basis of the temperature detected by the temperature sensor (9).
