ELECTROLYTE FOR FORMING ANODIC OXIDE FILM, METHOD OF FORMING ANODIC OXIDE FILM, AND ANODIC OXIDE FILM AND MEMBER FOR SEMICONDUCTOR DEVICE MANUFACTURED THEREBY
Proposed are an electrolyte for forming an anodic oxide film, the electrolyte including citric acid and an additive, wherein the citric acid accounts for 3.0 wt % or more and 6.0 wt % or less based on 100 wt % of the electrolyte, the additive includes one or more selected from among tartaric acid, sulfuric acid, and sodium acetate, and the additive accounts for 0.5 wt % or more and 4.0 wt % or less based on 100 wt % of the electrolyte, a method of forming an anodic oxide film using the electrolyte, and an anodic oxide film and a member for a semiconductor device manufactured thereby.
An embodiment of the present invention provides a method for manufacturing a coating layer, comprising the steps of: preparing an object to be coated; forming, on the object to be coated, an aluminum oxide-based, yttrium oxide-based or zirconium oxide-based first coating layer by means of aerosol deposition; and forming, on the first coating layer, an aluminum oxide-based, yttrium oxide-based or yttrium fluoride-based second coating layer by means of physical vapor deposition, wherein the second coating layer includes an array of columnar crystals that extend perpendicularly to the surface of the object to be coated.
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
C23C 14/02 - Pretreatment of the material to be coated
C23C 14/30 - Vacuum evaporation by wave energy or particle radiation by electron bombardment
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
C23C 24/04 - Impact or kinetic deposition of particles
METHOD OF FORMING PLASMA-RESISTANT COATING LAYER WITH LOW BRIGHTNESS USING HEAT TREATMENT PROCESS OF RARE-EARTH METAL COMPOUND POWDER AND PLASMA-RESISTANT COATING FILM FORMED THEREBY
A method of forming a plasma-resistant coating layer with low brightness includes: (a) performing a heat treatment process on a primary rare-earth metal compound powder having a grain size in a range of 20 nm to 60 nm to prepare a secondary rare-earth metal compound powder, (b) transferring the secondary rare-earth metal compound powder, and (c) spraying the transferred secondary rare-earth metal compound powder onto a substrate to form a rare-earth metal compound coating layer on the substrate. In the transferring, a carrier gas is used to transfer the secondary rare-earth metal compound powder. The secondary rare-earth metal compound powder obtained through the heat treatment process has a grain size in a range of 70 nm to 150 nm, and the rare-earth metal compound coating layer has a brightness value of 50 or less.
Provided is a method of manufacturing an yttria thermal spray coating having low porosity, high density, and excellent plasma resistance, including arranging a spray unit at a distance of 50 to 130 mm from a base material, subjecting Y2O3 thermal spray powder to atmospheric plasma spraying to form an yttria thermal spray coating on the base material, and supplying water at a rate of 50 to 400 ml/min together with the Y2O3 thermal spray powder.
The invention relates to electron beam-ion assisted deposition of a yttrium aluminate compound. The present invention provides a method for electron beam-ion assisted deposition, by which a Y-Al-O compound thin film is deposited on a substrate arranged in an electron beam ion-assisted deposition apparatus, the method comprising the steps of: loading an aluminum source into a first holder and loading a yttrium source into a second holder of an electron beam evaporator of the deposition apparatus; on the substrate, forming a seed layer by ion-beam assisted deposition of the aluminum source evaporated from the first holder of the electron beam evaporator; and forming a Y-Al-O layer on the seed layer by beam-ion assisted deposition while evaporating the yttrium source and the aluminum source from the first holder and the second holder of the electron beam evaporator simultaneously.
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
Disclosed is a method for plasma spray coating for a sprayed coating containing YAG, which provides a method for manufacturing a plasma sprayed coating, the method comprising: providing a granular powder containing crystalline YAG; forming a plasma stream toward a base material from a plasma spray torch; forming molten droplets of the granular powder by supplying the granular powder to the plasma stream; providing a coolant stream in a direction intersecting the plasma stream containing the molten droplets; and providing the base material with the plasma stream that has undergone the coolant stream, thereby forming a sprayed coating containing a crystalline phase and an amorphous phase.
The present invention provides a plasma sprayed coating comprising a composite of a magnesium compound and an yttrium compound, wherein the composite includes a monoclinic yttrium oxide.
A coating method of a chamber for a deposition process according to the present invention comprises the steps of: (a) forming a lower coating layer by performing an arc spraying process using an aluminum wire on an object to be coated; and (b) forming an upper coating layer by performing a physical vapor deposition process of metal compound powder on the lower coating layer formed in step (a), wherein the metal compound in step (b) has the same component as a PVD process by-product, thereby extending the maintenance and management cycle of components in the chamber so as to increase the yield of semiconductor production.
A method for manufacturing an yttrium-based thermal spray coating is disclosed. The method includes spraying yttrium-based granular powder containing a mixture of yttrium compound powder and silica (SiO2) powder by an atmospheric plasma spraying process to form the yttrium-based thermal spray coating on a base member, in which the yttrium compound is any one selected from Y2O3, YOF, YF3, Y4Al2O9, Y3Al5O12 and YAlO3, the silica (SiO2) occupies 0.1 to 30 wt %, and the yttrium-based thermal spray coating has a value ‘L’ of 80.0 or greater as a colorimetric measurement value under a plasma exposure condition.
A coating method for semiconductor equipment according to the present invention comprises the steps of: (a) preparing metal powder having the same composition as a base material as a coating material; and (b) melting the coating material made of the metal powder by using a laser beam having an intensity of 300-1000 W to form a textured coating layer, wherein a spacing distance between an end of a laser device irradiated by the laser beam and a coating surface of the base material is maintained as 8-20 mm such that a textured coating layer having the same strength as the base material can be formed.
C23C 26/02 - Coating not provided for in groups applying molten material to the substrate
C23C 24/10 - Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
Proposed is a method of forming a plasma-resistant coating film. The method includes (a) forming a lower coating layer on a target object by depositing a first rare-earth metal compound powder through a physical vapor deposition (PVD) process, (b) transferring a second rare-earth metal compound powder, and (c) forming an upper coating layer by spraying the transferred second rare-earth metal compound powder onto the lower coating layer, thereby obtaining a plasma-resistant coating film with fewer structural defects and enhanced physical properties.
An yttrium-based powder for thermal spraying and an yttrium-based thermal spray coating formed from the yttrium-based powder are proposed. The yttrium-based powder includes an yttrium-based compound and an optimally controlled amount of an oxide additive, SiO2. The yttrium-based powder inhibits formation of black spots or prevents the yttrium-based compound from turning black through plasma spray coating. The yttrium-based powder enables formation of a thermal spray coating with a desired color and improved mechanical properties.
Disclosed are a material for plasma spray coating having high plasma resistance and a method for producing the same. The method includes: feeding yttrium compound into an air plasma jet; melting the yttrium compound; and cooling droplets of the molten yttrium compound.
Disclosed are a material for spray for plasma spray coating having high plasma resistance and a method for producing the same. The material for plasma spray comprises an yttrium compound, and the numbers of moles of Y (yttrium), O (oxygen), and F (fluorine) in the yttrium compound satisfy 1.5<(O+F)/Y<2.0.
C04B 35/505 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare earth compounds based on yttrium oxide
C04B 35/515 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides
C04B 35/553 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on fluorides
A method of forming a plasma-resistant coating layer with low brightness includes: (a) performing a heat treatment process on a primary rare-earth metal compound powder having a grain size in a range of 20 nm to 60 nm to prepare a secondary rare-earth metal compound powder, (b) transferring the secondary rare-earth metal compound powder, and (c) spraying the transferred secondary rare-earth metal compound powder onto a substrate to form a rare-earth metal compound coating layer on the substrate. In the transferring transfer, a carrier gas is used to transfer the secondary rare-earth metal compound powder. The secondary rare-earth metal compound powder obtained through the heat treatment process has a grain size in a range of 70 nm to 150 nm, and the rare-earth metal compound coating layer has a brightness value of 50 or less.
Proposed are a slurry composition for suspension plasma thermal spray, a preparation method therefor, and a suspension plasma thermal spray coating film. When the slurry composition is used to form a thermal spray coating film, the thermal spray coating film can be stably applied to applications used in a corrosive environment because no changes occur in content of oxygen and fluorine in the thermal spray coating film. In addition, when forming the coating film, since various crystal structures can be formed under control, the coating film can be used in various environments requiring corrosion resistance. In addition, the slurry composition can inhibit formation of cracks and pores that frequently occur in existing thermal spray coating films, thereby allowing for formation of a denser thermal spray coating film than the existing thermal spray coating film.
A particle measuring device includes a probe including a nozzle spraying a gas on a surface of an object and an inlet inhaling the gas and particles scattered from the surface by the gas; a main pipe including an inflow hole through which the gas flows and a discharge hole through which the gas is discharged; a first manifold provided to connect the main pipe to the nozzle, and supplying the gas to the nozzle; a second manifold provided to connect the main pipe to the inlet between a connecting portion of the first manifold and the discharge hole, and supplying the particles and the gas to the main pipe; a third manifold branched from the second manifold and supplying the particles and the gas; and a particle counter connected to the third manifold, and counting the particles included in the gas supplied through the third manifold.
The proposed is a manufacturing method for a high-density YF3 coating layer by high-velocity oxygen fuel spraying (HVOF). More particularly, proposed is a manufacturing method for a high-density YF3 coating layer by HVOF, in which YF3 powder is melted and quenched to form densified spherical YF3 particles and then the YF3 particles are applied by HVOF to form a high-density YF3 coating layer with improved mechanical properties and plasma resistance.
C23C 4/04 - Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
C23C 4/12 - Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
Disclosed is a thin film stress control-based coating method for large-area coating. The method uses a two-step coating process in which a first coating layer that is a relatively low-hardness layer is primarily formed on a base member and a second coating layer that is a relatively high-hardness layer is secondarily formed on the first coating layer. The method can form a high-density coating structure that is hardly peeled off over a relatively large area compared to conventional coating methods by suppressing internal stress of the coating layers of the coating structure. Further disclosed is a coating structure manufactured by the same method.
C23C 28/04 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of inorganic non-metallic material
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Proposed is a method for manufacturing a spherical YOF-based powder. Specifically, proposed is a method for manufacturing a spherical YOF-based powder. The YOF-based powder injected into the plasma jet and melted into the refrigerant in a droplet state is sprayed and quenched, thereby improving density and controlling the component ratio through particle spheroidization.
C23C 4/04 - Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
2) powder. A Y—Si—O intermediate phase is included therein in a content of less than 10 wt %. The thermal spray coating manufactured using the same has a low porosity, and forms a very dense thin film, thus ensuring excellent plasma resistance.
C04B 35/505 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare earth compounds based on yttrium oxide
2) powder. The yttrium-based granular powder is prepared by mixing the yttrium compound powder having a mean grain diameter of 50 nm to 900 nm and the silica powder having a mean grain diameter of 50 nm to 900 nm. The yttrium-based granular powder includes less than 10 wt % of a Y—Si—O mesophase. A thermal spray coating produced using the yttrium-based granular powder can exhibit low porosity, high density, and excellent plasma resistance.
C01F 17/36 - Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6 halogen being the only anion, e.g. NaYF4
C01F 17/34 - Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12
C23C 4/12 - Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
The present invention relates to a slurry composition for suspension plasma thermal spray, a preparation method therefor, and a suspension plasma thermal spray coating film. More particularly, the present invention relates to a slurry composition for suspension plasma thermal spray, which can be stably applied in a corrosive environment because the composition of an oxygen component and a fluorine component contained in a thermal spray coating film does not change when the thermal spray coating film is manufactured, can be applied in various corrosion-resistant environments because various crystal structures can be formed and controlled, and at the same time, can form a denser thermal spray coating film than the conventional thermal spray coating film by suppressing the formation of cracks and pores that have occurred in the conventional thermal spray coating film; a preparation method therefor; and a suspension plasma thermal spray coating film.
C23C 4/04 - Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
Disclosed is an aerosol-deposition-coating method for plasma-resistant coating, in which the inside of a processing device can be protected from plasma during a plasma-etching process, the roughness of a coating layer on a metal substrate can be decreased to thereby reduce the generation of particles, and adhesion between the coating layer and the metal substrate can be enhanced.
A camera unit photographs a learning object positioned on a stage unit to obtain an image of the learning object, configures a defect type on the basis of the image of the learning object and a feature element for learning of a defect, and configures a relationship between the feature element for learning of the defect and the defect type, through a deep learning scheme. Thereafter, an inspection object is positioned on the stage unit, and the camera unit is used to secure a position coordinate value of the camera unit with respect to the inspection object. Subsequently, the camera unit is moved on the basis of the position coordinate value, the moved camera unit is used to photograph the inspection object positioned on the stage unit, so as to obtain an image of the inspection object, and a feature element of a defect with respect to the inspection object is calculated from the image of the inspection object. Then, on the basis of the calculated feature element of the defect, defects are classified according to defect types from the relationship between the feature element for learning of the defect and the defect type.
Disclosed are a surface treatment apparatus and method using atmospheric pressure plasma. According to an aspect of the present invention, a surface treatment apparatus using atmospheric pressure plasma can be provided, comprising: a housing which provides a hermetically sealed internal space; a platform which provides a top surface on which an object to be treated is securely seated, in the internal space of the housing; a pair of plasma electrodes for generating atmospheric pressure plasma in the internal space of the housing; a nozzle through which an inert gas is sprayed into the internal space of the housing to produce the flow of the inert gas; and an exhaust line which is connected to the internal space of the housing and through which the inert gas is discharged.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
28.
Photoplasma etching apparatus having improved plasma-resistant and manufacturing method therefor using a thermal diffusion phenomenon of a rare-earth metal thin film
The present invention provides a photoplasma etching device and a method of manufacturing the same, and more particularly to a member for a plasma etching device, which is improved in plasma resistance through deposition of a rare-earth metal thin film and surface heat treatment and the optical transmittance of which is maintained, thus being useful as a member for analyzing the end point of an etching process, and a method of manufacturing the same.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a vacuum chamber monitoring device and method. Disclosed is a technical idea related to a chamber monitoring device and method, the chamber monitoring device comprising: at least one process chamber having a plurality of halogen lamps provided therein; a vacuum pump for supplying a vacuum to the process chamber; at least one valve for opening and closing a vacuum line connected to the process chamber and the vacuum pump; a gas detection unit connected to the vacuum line and having at least two gas analyzers disposed therein; and a control unit.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
G01N 21/3504 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
30.
AEROSOL DEPOSITION COATING METHOD FOR PLASMA-RESISTANT COATING
The present invention relates to an aerosol deposition coating method for plasma-resistant coating and, more specifically, to an aerosol deposition coating method for plasma-resistant coating, by which the inside of equipment can be protected from plasma during a plasma etching process, particle generation can be reduced by decreasing the roughness of a metal base coating layer, and the binding force between a coating layer and a metal base can be improved.
C23C 24/04 - Impact or kinetic deposition of particles
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
The present invention relates to a system for acquiring and analyzing an image of a three-dimensional subject, the system comprising: a photographing unit for acquiring image information of every exposed side of the subject; an adjustment unit for holding the photographing unit and adjusting the three-dimensional position of the photographing unit; a light-emitting unit for irradiating the subject with light having a predetermined light-emission condition; and a control unit for controlling a photographing condition of the photographing unit, controlling the operation of the adjustment unit, and controlling the light-emission condition of the light-emitting unit.
C23C 4/04 - Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
C04B 35/50 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare earth compounds
33.
METHOD FOR MANUFACTURING ANODIZED ALUMINUM OR ALUMINUM ALLOY MEMBER HAVING EXCELLENT CORROSION RESISTANCE AND INSULATION CHARACTERISTICS, AND SURFACE-TREATED SEMICONDUCTOR DEVICE
The present invention relates to a method for forming, on the surface of aluminum or an aluminum alloy member, an anodized film having excellent corrosion resistance and insulation characteristics, and an aluminum or aluminum alloy member having an anodized film manufactured by the method and, more specifically to: a method for forming a high hardness anodized film without internal defects in an anodized coating layer and forming an anodized film having excellent corrosion resistance and insulation characteristics; and a semiconductor coated with an anodized film manufactured by the same method, or an inner member for a display manufacturing device.
The present invention relates to a method for manufacturing a plasma-resistant coating film, the method comprising the steps of: (1) forming a first rare-earth metal compound coating layer by thermally spraying a first rare-earth metal compound on an object being coated; (2) polishing the surface of the first rare-earth metal compound coating layer formed in step (1); and (3) forming a second rare-earth metal compound layer by aerosol-depositing a second rare-earth metal compound on the first rare-earth metal compound coating layer that has undergone the process in step (2), wherein the second rare-earth metal compound is the same component as the first rare-earth metal compound.
The present invention relates to a plasma etching apparatus member and a manufacturing method therefor and, more specifically, to: a plasma etching apparatus member, which improves plasma-resistant properties through deposition of rare earth metal thin film and surface heat treatment, and maintains light transmittance so as to be usable as a member for analyzing the end point of an etching process; and a manufacturing method therefor.
The present invention relates to a plasma resistant coating film and a formation method therefor and, more specifically, to a plasma resistant coating film and a formation method therefor, the plasma resistant coating film being capable of minimizing an open channel and an open pore of a coating layer by means of double sealing through aerosol deposition and hydration processing after thermal spray-coating a first rare-earth metal compound, such that a chemical resistant property and plasma corrosion resistance caused by a dense rare-earth metal compound coating film can be simultaneously obtained.
According to the present invention, a tray for loading substrates may comprise: a main body; and a guide unit. The main body may have a flat-plate structure having a first surface on which substrates are loaded, and may be made of a carbon-carbon composite material. The guide unit may guide the substrates onto the main body such that the substrates can each be loaded into predetermined locations. When thin films are formed on substrates for solar cells, the tray for loading the substrates may not only stably maintain physical properties even in a high-temperature process under a plasma atmosphere but also may be implemented into a large area capable of loading a much greater number of substrates.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
According to the MEMS switch and the method for manufacturing same of the present invention, the MEMS switch includes a substrate, a first terminal formed on the substrate, a second terminal formed on the substrate and being spaced a predetermined interval from the first terminal, a conductive support formed on the second terminal, a conductive driving beam connected to the support in a cantilever form and extending parallel to the substrate to allow one end thereof to be disposed above the first terminal and to contact the first terminal when same is bent by an externally applied impact. Accordingly, a micro-sized switch may be manufactured and stable operation of the switch is possible.
An electrostatic chuck comprises an electrostatic layer and a heat-emitting layer. The electrostatic layer has disposed therein an electrostatic electrode which generates an electrostatic force for securing a substrate placed thereon, while also having a first heat transfer coefficient. The heat-emitting layer is disposed underneath the electrostatic layer and has disposed therein a heat-emitting electrode for heating the substrate, while also having a second heat transfer coefficient higher than the first heat transfer coefficient.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Provided are a multi-analysis sensor and a multi-analysis method using same, which enable the quick and efficient analysis of a sample. The multi-analysis sensor comprises: a sample separation unit including a separation pattern for separating a measured sample from an injected sample, and a chamber for storing the measure sample; a reaction unit for analyzing the measured sample; and a measurement gauge including an electrode. The sensor and method can provide good reliability and accuracy in the diagnosis of diseases and enable the simultaneous measurements of various items.
The laminated structure for a solid oxide fuel cell comprises a plurality of flat tubular end cells and a connecting member. Each of the plurality of flat tubular end cells includes a support portion, a first cell portion, and a second cell portion. The support portion is provided with a fluid passage. The first cell portion is provided with a first fuel electrode on the lower part of the support portion, a first electrolyte on the lower part of the first fuel electrode, and a first air electrode on the lower part of the first electrolyte. The second cell portion is disposed on the upper part of the support portion, and provided with a second fuel electrode spaced apart from the first fuel electrode, a second electrolyte on the second fuel electrode, and a second air electrode disposed on the second electrolyte and spaced apart from the first air electrode. The connecting member electrically connects the first cell portions and the second cell portions of the tubular end cells. This laminated structure for a solid oxide fuel cell can generate high density current or high voltage.
The present invention relates to a grounding structure, and a heater and a chemical vapor deposition apparatus having the same. The grounding structure comprises: a grounding mount having a housing for receiving a grounding connector that serves to guide a ground current to a ground receiver; a grounding clamp located at the housing, the grounding clamp having a cylindrical form with an open portion to communicate inside and outside and holding a grounding connector in such a manner as to bring the surface and inner surface of the grounding connector into contact with each other; a pair of jaws protruding from the outer surface close to the open portion and extending in parallel with the outer surface, while keeping a distance from each other as much as the width of the open portion; an interference reinforcing member fastened to the jaws, for reinforcing the bonding force between the grounding clamp and the grounding connector; and a ground wire for connecting the outer surface of the grounding clamp with the grounding mount to transfer the ground current to the grounding mount. By increasing the bonding force between the grounding clamp and the grounding connector, it is possible to restrain the formation of a clearance and thus prevent the damage on the grounding connector due to arcing.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01R 13/648 - Protective earth or shield arrangements on coupling devices
43.
SOLID OXIDE FUEL CELL AND METHOD FOR MANUFACTURING SAME
Disclosed is a method for manufacturing a flat tubular solid oxide fuel cell. The disclosed method for manufacturing a flat tubular solid oxide fuel cell comprises: laminating an electrolyte sheet, a fuel electrode sheet, and a channel unit sheet having an opening, in order to form a multilayer sheet; sintering the multilayer sheet to form a channel support layer having a flow channel, a fuel electrode layer, and a tubular electrolyte layer which covers the channel support layer and the fuel electrode layer; and forming a tubular air electrode layer which covers the electrolyte layer. The flat tubular solid oxide fuel cell of the present invention has both the structural advantage of the flat tubular solid oxide fuel cell and the work advantage of a flat plate solid oxide fuel cell.
H01M 8/24 - Grouping of fuel cells, e.g. stacking of fuel cells
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
44.
ELECTROSTATIC CHUCK AND METHOD FOR MANUFACTURING SAME
The invention relates to an electrostatic chuck, comprising: a base; an amorphous first insulating layer formed on the base; an electrode layer for generating electrostatic force formed on the first insulating layer; and a dielectric layer formed on the electrode layer. Accordingly, the electrostatic chuck of the present invention suppresses arcing caused by the leakage of current, and achieves improved electrical characteristics and durability.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
45.
Ion implanter, internal structure of ion implanter and method of forming a coating layer in the ion implanter
KOMICO LTD. (Democratic People's Republic of Korea)
KOMICO LTD. (Democratic People's Republic of Korea)
Inventor
Jang, Kyung-Ic
Ye, Kyung-Hwan
Kim, Sam-Woong
Reim, Yong-Sup
Abstract
An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and includes the same material as that of the substrate.
A method for producing a laminated ceramic base plate having a cavity comprises: a first compression step in which first and second unsintered sheet stacks are separately formed by respectively compressing a plurality of unsintered ceramic green sheets; a step in which a hole is formed in the second unsintered sheet stack; a step in which the second unsintered sheet stack, in which the hole has been formed, is placed on the first unsintered sheet stack and a preliminary third unsintered sheet stack is formed; a step in which a first thin film and a second thin film for sealing are respectively placed on the upper surface and the lower surface of the preliminary third unsintered sheet stack; a second compression step in which a third unsintered sheet stack is formed by compressing the first and second thin films together with the preliminary third unsintered sheet stack; and a step in which the third unsintered sheet stack is sintered. In this way, a plurality of ceramic green sheets can be laminated through a flat mould without being hindered by the shape of the cavity, and the production process can be simplified and carried out in a stable fashion.
A lift pin comprises a main body and a support unit, wherein said main body is inserted into a through-hole of a susceptor on which a wafer is disposed, such that the main body is vertically movable, and wherein said support unit is coupled to the upper surface of the main body to support the wafer, and made of a material having a hardness lower than that of the wafer to protect the surface of the wafer from scratches.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
48.
ELECTROSTATIC CHUCK (ESC) COMPRISING A DOUBLE BUFFER LAYER (DBL) TO REDUCE THERMAL STRESS
Disclosed is an electrostatic chuck comprising a buffer layer to absorb thermal stress. The electrostatic chuck comprises: a main body having transverse holes; a base plate disposed on the upper side of said main body and including insertion holes corresponding to said transverse holes, and an electrode layer partially exposed through said insertion holes, to secure an object to be held by the electrostatic energy of said electrode layer; a terminal unit having a contact terminal connected to said electrode layer through said transverse holes and said insertion holes; and a buffer layer disposed at at least one boundary between said contact terminal, said main body, and said base plate so as to be able to absorb thermal stress from said main body. According to the present invention, the buffer layer of the electrostatic chuck absorbs thermal stress, thereby minimising cracks due to thermal stress and extending the life of the chuck.
Disclosed is an electrostatic chuck (ESC) comprising a buffer layer to absorb thermal stress. The electrostatic chuck comprises: a main body having transverse holes; a base plate disposed on the upper side of said main body and including insertion holes corresponding to said transverse holes, and an electrode layer partially exposed through said insertion holes, to secure an object to be held by the electrostatic energy of said electrode layer; a terminal unit having a contact terminal connected to said electrode layer through said transverse holes and insertion holes, and insulating members for electrically insulating said contact terminal and said main body; a first buffer layer disposed at at least part of the boundary between said main body and said insulating member to block the transfer of thermal stress from said main body to said insulating members; and a second buffer layer disposed at at least part of the boundary between said main body and said base plate to block the transfer of thermal stress from said main body to said insulating members. According to the present invention, the buffer layers of the electrostatic chuck absorb thermal stress, thereby minimising cracks due to thermal stress and extending the life of the chuck.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
CHEORWON PLASMA RESEARCH INSTITUTE (Republic of Korea)
Inventor
Hwang, Chul-Ho
Kim, Hyung-In
Seo, Jun-Ho
Abstract
The present invention relates to a coating method and to a coating apparatus, which coagulate powder having a mean particle size of 30 to 5,000 nm by means of vibration to form the powder into granules having a mean particle size of 1 to 20µm, crush the granules by means of rotation to form the granules into a coating powder having a mean particle size of 30 to 5,000 nm, and perform an atmospheric plasma spray coating process using the coating powder as a spray material to coat a base material.
B05D 1/02 - Processes for applying liquids or other fluent materials performed by spraying
C23C 4/10 - Oxides, borides, carbides, nitrides or silicidesMixtures thereof
C23C 4/04 - Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
Disclosed is a ceramic coating with improved plasma resistance applied to a plasma processing apparatus. The ceramic coating is formed on a substance applied to a plasma processing apparatus and on the surface of the substance. In addition, the ceramic coating has 13-25 nm/min of a corrosion rate for the plasma formed at 800W power and includes a ceramic coating film with 0.1-1% porosity. Accordingly, surface damage of the ceramic coating, as configured above, can be reduced even if it is exposed to plasma for lengthy periods.
CHEORWON PLASMA RESEARCH INSTITUTE (Republic of Korea)
Inventor
Kim, Hyung-In
Seo, Jun-Ho
Hwang, Chul-Ho
Chang, Jae-Hoon
Abstract
An apparatus for forming a ceramic coating film with improved plasma resistance comprises a ceramic powder supply unit, a unit for dispensing a fixed amount of ceramic powder, a dispersion unit, and an ejection unit. The ceramic powder supply unit contains ceramic powder. The unit for dispensing a fixed amount of ceramic powder forms uniformly aggregated ceramic powder. The dispersion unit forms aerosol by pulverizing and dispersing the aggregated ceramic powder. The ejection unit forms a ceramic coating film with porosity of 1% or less on the surface of a substance by ejecting the aerosol onto the substance at high speed.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
53.
METHOD FOR FORMING CERAMIC COATING FILM WITH PLASMA RESISTANCE
CHEORWON PLASMA RESEARCH INSTITUTE (Republic of Korea)
Inventor
Hwang, Chul-Ho
Seo, Jun-Ho
Kim, Hyung-In
Abstract
In a method for forming a ceramic coating film with improved plasma resistance, ceramic powder is dispersed so that the particles of ceramic powder have 0.1-1.0um diameter. The dispersed ceramic powder is sprayed onto the surface to be coated at high speed and the ceramic powder is thus deposited onto the surface. As a result, a ceramic coating film with about 0.1-1% porosity is formed on the surface.
B32B 27/06 - Layered products essentially comprising synthetic resin as the main or only constituent of a layer next to another layer of a specific substance
54.
SUBSTRATE-SUPPORTING DEVICE, AND A SUBSTRATE-PROCESSING DEVICE HAVING THE SAME
A substrate-supporting device comprises: an upper plate for supporting a substrate; a lower plate positioned underneath the upper plate; an insulating member interposed between the upper plate and the lower plate; an electrode which is interposed between the upper plate and the insulating member, and which is for concentrating plasma onto a substrate which is placed on the upper plate; and a heater which is interposed between the insulating member and the lower plate, and which heats the substrate which is supported by means of the upper plate. Here, the insulating member comprises a material which has a volume resistance of at least 106 Ω cm at a temperature of from 400°C to 800°C such that it reduces leakage current between the heater and the electrode.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
55.
SPRAY-COATED BODY, METHOD OF COATING AN OBJECT BY A SPRAY COATING PROCESS AND APPARATUS FOR PERFORMING THE SAME
In a spray-coated body and apparatus and method of forming a spray-coating layer, the spray- coating layer is positioned on a surface of a object body and has a volume resistivity in a range of about 1010 Ω-cm to about 1014 Ω-cm. Accordingly, the spray-coating layer has an optimized volume resistivity and the chemical or plasma damage to the spray-coating layer may be minimized in the spray coating process, to thereby improve the characteristics of the spray- coating layer and the reliability of the spray coating process.
A substrate support unit of a substrate processing apparatus includes a first support member, a second support member, a buffer member and a tube. The first support member has an electrode and a heater built-in and supports the substrate. The second support member is disposed beneath the first support member to support the first support member. The buffer member is disposed between the first support member and the second support member to form an air gap between the first support member and the second support member so as to reduce heat transfer between the first support member and the second support member. The tube is connected with a lower surface of the first support member. Further, the tube extends through the second support member and receives lines for applying power to the electrode and the heater.
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
57.
METHOD OF HYDRATING A CERAMIC SPRAY-COATING LAYER, METHOD OF MANUFACTURING AN ELECTROSTATIC CHUCK THAT USES THE HYDRATING METHOD, AND SUBSTRATE STRUCTURE AND ELECTROSTATIC CHUCK HAVING THE CERAMIC SPRAY-COATING LAYER FORMED USING THE HYDRATING METHOD
In a method of hydrating a ceramic spray-coating layer of an electrostatic chuck, water penetrates into pores and/or cracks of the ceramic spray-coating layer, and the penetrated water then reacts with the ceramic spray-coating layer to form hydroxide in the pores and/or cracks. As a result, the electrical characteristics and hydrophobicity of the ceramic spray-coating layer may be improved.
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
58.
ION IMPLANTER, INTERNAL STRUCTURE OF ION IMPLANTER AND METHOD OF FORMING A COATING LAYER IN THE ION IMPLANTER
An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and includes the same material as that of the substrate.
An apparatus for transferring a wafer includes a ceramic blade, an electrode, a plurality of pads, a coating layer and a robot arm. The blade supports the wafer, and the electrode is disposed inside the blade. Electric power is applied to the electrode to generate an electrostatic force for holding the wafer. The pads are disposed on an upper surface of the blade, and thus frictional forces may be provided between the wafer and the pads. The coating layer is disposed on the blade. The robot arm is connected with the blade to move the blade.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
Goods & Services
[ SEMICONDUCTORS; LIQUID CRYSTAL DISPLAYS; ELECTRON LUMINESCENCES AND COLOR FILTERS FOR DISPLAY MANUFACTURING EQUIPMENT; ] DOME CERAMICS, SILICON FOCUS RINGS, WALL LINER ANODIZINGS AND COATING MASKS FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT [ ; CHAMBERS FOR PHYSICAL VAPOR DEPOSITION EQUIPMENT;PUMPS FOR CHEMICAL VAPOR DEPOSITION EQUIPMENT; CHAMBERS FOR LIQUID CRYSTAL DISPLAY MANUFACTURING EQUIPMENT; PUMPS FOR FLAT PANEL DISPLAY MANUFACTURING EQUIPMENT ] REBUILDING OF PARTS FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT; CLEANING OF SEMICONDUCTOR MANUFACTURING EQUIPMENT; REBUILDING OF PARTS FOR DISPLAY MANUFACTURING EQUIPMENT; [ CLEANING OF DISPLAY MANUFACTURING EQUIPMENT; ] REBUILDING OF PARTS FOR DISPLAY MANUFACTURING PROCESSES; REBUILDING OF PARTS FOR SEMICONDUCTOR MANUFACTURING PROCESSES
