The present invention provides a power connection structure of a ceramic heater or an electrostatic chuck, the power connection structure comprising: a ceramic substrate; a heating wire or static electricity generating electrode, embedded in the ceramic substrate; two or more rod-shaped connectors having one end electrically connected onto a virtual circumference of the rear surface of the heating wire or the static electricity generating electrode, having the other end arranged to face the rear surface of the ceramic substrate, and embedded in the ceramic substrate; a cylindrical connection hole which is in communication with the rear surface of the ceramic substrate and exposes portions of the outer circumferential surfaces of the two or more rod-shaped connectors into the space; and a metal rod for electricity supply, which is inserted into a hollow portion of the connection hole and is electrically connected to the two or more rod-shaped connectors exposed to the connection hole.
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01R 13/03 - Contact members characterised by the material, e.g. plating or coating materials
2.
CERAMIC SUSCEPTOR INCLUDING CORE/SHELL STRUCTURED MATERIAL AS COATING LAYER
233) and aluminum nitride (AlN), does not include a secondary phase of an aluminum oxynitride phase (AlON phase), and the coating layer has a structure in which particle phases constituting a shell form a continuous phase along a grain boundary of core particle phases.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C04B 41/50 - Coating or impregnating with inorganic materials
C04B 35/10 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminium oxide
A ceramic susceptor is disclosed, which not only has excellent volumetric resistance at high temperatures and thermal conductivity at room temperature compared to conventional ceramic susceptors, but also has excellent plasma resistance without peeling of the coating layer even in high temperature environments, and thus has the effect of reducing particles.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
4.
Ceramic susceptor and manufacturing method thereof
A ceramic susceptor particularly with excellent volumetric resistance at high temperatures and thermal conductivity at room temperature compared to a typical ceramic susceptor and a method for manufacturing the same are disclosed. The ceramic susceptor is characterized by comprising alumina (Al2O3); and aluminum nitride (AlN), and not comprising a secondary phase including an aluminum oxynitride phase (AlON phase).
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The present invention provides a plate-type heating device and a manufacturing method therefor, the device comprising a ceramic plate substrate and a heating wire embedded in the ceramic plate substrate, wherein non-sintered ceramic powder is positioned between the outer peripheral portion of the heating wire and the ceramic plate substrate. The non-sintered ceramic powder is a material with a sintering temperature at least 50℃ higher than that of a ceramic material constituting the ceramic plate substrate, has a thermal expansion coefficient which is less than or equal to that of the ceramic material, and has a thermal conductivity coefficient which is greater than or equal to that of the ceramic material.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
7.
CORE/SHELL STRUCTURE MATERIAL AND CERAMIC MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS USING SAME
UNIVERSITY INDUSTRY FOUNDATION, YONSEI UNIVERSITY WONJU CAMPUS (Republic of Korea)
Inventor
Kim, Yun Ho
Kim, Joo Hwan
Kim, Bo Sung
Jeon, Yukwon
Kim, Seulgi
Abstract
The present invention relates to a core/shell structure material capable of providing high volume resistance and thermal conductivity while providing improved plasma resistance and durability against physical and/or chemical attacks caused in a plasma process environment without a separate coating for improving plasma resistance and to a ceramic member for a semiconductor manufacturing device using same. The present invention provides a ceramic member for a semiconductor manufacturing device, the ceramic member comprising: a core including an aluminum compound; and a shell at least partially surrounding the core and including a plasma-resistant metal or ceramic compound, wherein the core and the shell have a shape composed of particles, and the ceramic member is a sintered body formed by sintering the core/shell structure material, and has a structure in which particle phases constituting the shell form a continuous phase along an interface of the core particle phases.
C04B 35/10 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminium oxide
C04B 35/581 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
Disclosed is a ceramic heater for a semiconductor manufacturing apparatus, the ceramic heater having volume resistivity especially at high temperature and thermal conductivity at room temperature that are superior to those of a normal ceramic heater for a semiconductor manufacturing apparatus. The ceramic heater for a semiconductor manufacturing apparatus includes a ceramic substrate including a) aluminum nitride (AIN), b) any one or more among magnesium oxide (MgO), alumina (Al2O3) and spinel (MgAl2O4), c) calcium oxide (CaO) and d) titanium dioxide (TiO2); and a resistive heating element.
H05B 3/26 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
C04B 35/581 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
C04B 35/581 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
C04B 35/58 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides
13.
CERAMIC SHOWER HEAD AND CHEMICAL VAPOR DEPOSITION DEVICE INCLUDING SAME
A shower head for a chemical vapor deposition system and a chemical vapor deposition device including the shower head are disclosed. The shower head includes a chamber; a process gas inlet for the chamber; a second gas distributor plate provided at the bottom of the chamber; and a first gas distributor plate stacked on the upper surface of the second gas distributor plate, wherein the first gas distributor plate includes multiple gas distribution holes, the second gas distributor plate includes multiple gas injection holes, and a distribution channel is arranged at the boundary surface between the first gas distributor plate and the second gas distributor plate so as to distribute a process gas, introduced through each gas distribution hole of the first gas distributor plate, to 2 to 8 gas injection holes of the second gas distributor plate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
14.
Electrostatic chuck and manufacturing method therefor
Disclosed are: an electrostatic chuck having a high volume resistivity so as to reduce a leakage current, thereby improving the adsorption and desorption response characteristics of a semiconductor wafer; and a manufacturing method therefor. The electrostatic chuck is a sintered body in which an electrode is impregnated so as to fix a semiconductor wafer by electrostatic force, and comprises alumina, a sintering aid, and a rare earth composite oxide comprising two to five different rare earth metals, has adsorption and desorption response characteristics of a semiconductor wafer of two seconds or less, and has a volume resistivity at room temperature of 1.0E+16 Ω·cm to 1.0E+17 Ω·cm.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A ceramic structure including a first conductive structure embedded therein and a second conductive structure embedded at a different depth from the first conductive structure is disclosed. In the ceramic structure, the first conductive structure and the second conductive structure are electrically connected to each other by an electrically conductive connection member capable of compensating for a vertical shrinkage rate of a ceramic sheet shape while being embedded therein when sintering the ceramic structure.
One embodiment of the present invention discloses an electrostatic chuck made of an aluminum nitride sintered body, wherein the aluminum nitride sintered body comprises aluminum nitride and a composite oxide formed along the grain boundaries of the aluminum nitride, wherein the composite oxide comprises at least two kinds of rare earth metals which have a solid-solution relationship with each other, and wherein the composite oxide comprises a collection area having a higher oxygen content than a surrounding area.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C04B 35/581 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
Disclosed are: an electrostatic chuck having a high volume resistivity so as to reduce a leakage current, thereby improving the adsorption and desorption response characteristics of a semiconductor wafer; and a manufacturing method therefor. The electrostatic chuck is a sintered body in which an electrode is impregnated so as to fix a semiconductor wafer by electrostatic force, and comprises alumina, a sintering aid, and a rare earth composite oxide comprising two to five different rare earth metals, has adsorption and desorption response characteristics of a semiconductor wafer of two seconds or less, and has a volume resistivity at room temperature of 1.0E + 16 to 1.0E + 17 Ω·cm.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
C04B 35/10 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminium oxide
C04B 35/626 - Preparing or treating the powders individually or as batches
The present invention provides a shower head for a chemical vapor deposition system, and a chemical vapor deposition device including same, the shower head comprising: a chamber; an inlet for injecting a process gas into the chamber; a second gas distributor plate arranged at the bottom of the chamber; and a first gas distributor plate stacked on the upper surface of the second gas distributor plate, wherein the first gas distributor plate includes multiple gas distribution holes, the second gas distributor plate includes multiple gas injection holes, and a distribution channel is arranged at the boundary surface between the first gas distributor plate and the second gas distributor plate so as to distribute a process gas, introduced through each gas distribution hole of the first gas distributor plate, to two to eight gas injection holes of the second gas distributor plate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
One embodiment of the present invention discloses an electrostatic chuck made of an aluminum nitride sintered body, wherein the aluminum nitride sintered body comprises aluminum nitride and a composite oxide formed along the grain boundaries of the aluminum nitride, and wherein the composite oxide comprises at least two kinds of rare earth metals which have an employment relationship with each other, and a collection area having a higher oxygen content than that of the surrounding area.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H02N 13/00 - Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
B23Q 3/15 - Devices for holding work using magnetic or electric force acting directly on the work
Provided is a heating wire arrangement for a ceramic heater, which is an arrangement of a heating wire on a ceramic substrate in a ceramic heater and emits heat. The heating wire arrangement for the ceramic heater includes a heating wire that is a metal wire member extending in a longitudinal direction and is two-dimensionally arranged on a virtual two-dimensional (2D) plane that is substantially parallel to a top surface of the ceramic substrate.
Thus, a uniform heat density may be maintained and a rapid temperature ramp-up may be enabled, unlike a conventional heating wire of a three-dimensional (3D) type.
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
H05B 3/18 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H05B 3/16 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being mounted on an insulating base
The present invention relates to an electrical terminal structure for a ceramic heater and, more particularly, to an electrical terminal structure which is used in a ceramic heater, and which connects a hot wire and a static electricity generating electrode arranged inside of a ceramic substrate of the ceramic heater with an electricity supplying member for supplying electricity to the hot wire and the static electricity generating electrode, wherein the electricity supplying member which has the shape of a metal rod comprises: a main body having one end of which is inserted into a through-hole formed on the lower surface of the ceramic substrate; and a groove which is formed on the one end of the main body, and which is inwardly recessed from the surface of the main body in a direction that crosses the lengthwise direction of the main body. According to the present invention, damages to a connected portion and damages to the ceramic substrate caused by stress concentration can be prevented even when exposed to repetitive thermal loads.
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
The present invention relates to a heating wire arrangement for a ceramic heater, in which the heating wire is arranged inside a ceramic substrate of the ceramic heater so as to emit heat. The heating wire arrangement comprises a heating wire, which is a wire member extending in a lengthwise direction and made of a metal material, the heating wire being arranged on a virtual two-dimensional plane substantially parallel to the upper surface of the ceramic substrate. The heating wire according to the present invention has the effect of enabling uniform heat density to be maintained and the temperature to be quickly raised as opposed to conventional three-dimensional coil-type heating wires.
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
The present invention relates to a hot wire connecting structure for a ceramic heater, which is used in the ceramic heater so as to interconnect the hot wire arranged in a ceramic substrate of the ceramic heater and an electricity supply member for supplying electricity to the hot wire. The hot wire connecting structure comprises a connection member which is a metal member to be inserted into the ceramic substrate, and one end of the connection member has an accommodation groove for insertion of the hot wire and the electricity supply member is coupled to the other end thereof. According to the present invention, the hot wire connecting structure includes a connection member, one end of which has the accommodation groove for insertion of the hot wire, and therefore, a contact area between the hot wire and the connection member is sufficiently ensured, and an electrical connection between the hot wire and the connection member can be stably maintained even at a high temperature.
H01R 12/51 - Fixed connections for rigid printed circuits or like structures
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
The present invention relates to an electrode-connecting structure for a ceramic heater, which is used in the ceramic heater to interconnect an electrode for generating static electricity, which is provided in the form of a mesh and which is arranged in a ceramic substrate of the ceramic heater, and an electricity supply member for supplying electricity to the electrode for generating static electricity. The electrode-connecting structure comprises a connection member, which is a metal member that is to be inserted in the ceramic substrate and one end of which has a plurality of accommodating grooves formed into a lattice for the insertion of the electrode for generating static electricity provided in the form of a mesh, and to the other end of which the electricity supply member is coupled. According to the present invention, a contact area between the electrode for generating static electricity and the connection member is sufficiently provided, and the electrical connection between the electrode for generating static electricity and the connection member can be stably maintained even at a high temperature.
H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
H05B 3/20 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
patents
