Scidre Scientific Instruments Dresden GmbH

Germany

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IPC Class
C30B 13/24 - Heating of the molten zone by irradiation or electric discharge using electromagnetic waves 2
C30B 15/16 - Heating of the melt or the crystallised materials by irradiation or electric discharge 2
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method 1
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Found results for  patents

1.

LASER-BASED AFTERHEATING FOR CRYSTAL GROWTH

      
Application Number 18006507
Status Pending
Filing Date 2021-07-20
First Publication Date 2023-09-21
Owner SCIDRE SCIENTIFIC INSTRUMENTS DRESDEN GMBH (Germany)
Inventor Schoendube, Robert

Abstract

A crystal-growth apparatus (10, 10’,10”) and a crystal-growth method for growing a crystal (21) from a molten feed material (23) are presented, where in addition to a molten-zone heater, at least one afterheater laser (5) is arranged to heat an extended afterheater zone (50), the afterheater zone (50) at least partly overlapping a solidification zone (210) adjacent to the molten zone (230). The crystal-growth apparatus (10, 10’,10”) and the crystal-growth method may be used for thermal treatment to reduce crack formation or thermal stress in grown crystals (21).

IPC Classes  ?

  • C30B 13/24 - Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
  • C30B 15/16 - Heating of the melt or the crystallised materials by irradiation or electric discharge
  • C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method

2.

LASER-BASED AFTERHEATING FOR CRYSTAL GROWTH

      
Application Number EP2021070197
Publication Number 2022/023108
Status In Force
Filing Date 2021-07-20
Publication Date 2022-02-03
Owner SCIDRE SCIENTIFIC INSTRUMENTS DRESDEN GMBH (Germany)
Inventor Schoendube, Robert

Abstract

A crystal-growth apparatus (10, 10', 10'') and a crystal-growth method for growing a crystal (21) from a molten feed material (23) are presented, where in addition to a molten-zone heater, at least one afterheater laser (5) is arranged to heat an extended afterheater zone (50), the afterheater zone (50) at least partly overlapping a solidification zone (210) adjacent to the molten zone (230). The crystal-growth apparatus (10, 10', 10'') and the crystal-growth method may be used for thermal treatment to reduce crack formation or thermal stress in grown crystals (21).

IPC Classes  ?

  • C30B 13/24 - Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
  • C30B 15/16 - Heating of the melt or the crystallised materials by irradiation or electric discharge