The present invention provides a stacked film having a passivated contact structure and a preparation method therefor, and a TOPCon cell. The preparation method comprises: A) forming a pretreated oxide layer on the back surface of a silicon wafer; B) depositing a tunneling oxide layer by means of PECVD, wherein the tunneling oxide layer is provided with n sub-films, and the plasma power of deposition of the n sub-films is increased in a gradient mode along with the deposition time; C) depositing a doped amorphous silicon layer by means of the PECVD to obtain a stacked film intermediate, wherein the doping concentration of the doped amorphous silicon layer is changed in a gradient mode along with the deposition time; and D) performing gradient annealing crystallization on the stacked film intermediate to obtain a stacked film having a passivated contact structure. The present invention can improve the chemical passivation property and the precision of the tunneling oxide layer, avoid the film delamination caused by hydrogen overflow during annealing of an intrinsic Poly layer, also reduce, by means of gradient heating annealing treatment, the intra-wafer/inter-wafer crystallization difference caused by insufficient annealing temperature of each work station, and improve the yield rate of mass production.
A reverse osmosis membrane and a preparation method therefor. The preparation method for the reverse osmosis membrane comprises: preparing an organic layer (20) on a flexible polymer substrate (10), the organic layer (20) being cross-linked and bonded with the flexible polymer substrate (10); and preparing an inorganic oxide layer (30) on the organic layer (20), the inorganic oxide layer (30) being cross-linked and bonded to the organic layer (20).
Embodiments of the present application relate to a charge storage structure and a method for manufacturing the charge storage structure. The charge storage structure according to an embodiment includes a wafer, a first polar region, and a second polar region. The wafer has a first surface and a second surface opposite to the first surface, wherein the first surface has a first texture, and the second surface includes a first part with a second texture and a second part connected to the first part; the first polar region is configured to be in contact with the first part of the second surface; the second polar region is spaced apart from the first polar region and is configured to be adjacent to the second part of the second surface; and the first texture is different from the second texture. The charge storage structure and the method for manufacturing the charge storage structure provided in the embodiments of the present application have the advantages of lower manufacturing cost and higher manufacturing efficiency, and can flexibly set a texture on a front surface of a battery and a texture in an opening of a back surface of the battery according to specific needs, so as to meet different product requirements.
In one aspect, a load lock chamber includes a chamber body. The chamber body is internally provided with at least one load-lock, and is provided with an air inlet portion and an air outlet portion which are communicated with each load-lock. The chamber body is provided with at least one dispersion portion, each dispersion portion is arranged to correspond to one load-lock, each dispersion portion comprises a plurality of independently formed dispersion holes, and each dispersion hole is communicated with the air inlet portion and the corresponding load-lock and is used for dispersing airflow entering the corresponding load-lock.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B08B 5/00 - Cleaning by methods involving the use of air flow or gas flow
5.
CARRIER FOR BATCH LOADING OF SUBSTRATES, AND TREATMENT DEVICE AND USAGE METHOD THEREFOR
Provided are a carrier for batch loading of substrates, and a treatment device and a usage method therefor. A treatment channel (11) is formed in the carrier (1); at least one treatment station (12) is provided in the treatment channel (11); the treatment station (12) comprises a fixed component and a slidable component; and the carrier (1) comprises side plates (13), each side plate (13) is provided with a mounting member, a first mounting hole (131a) is formed in the mounting member, and the first mounting hole (131a) is used for assembling the slidable component. By using the carrier, the slidable components specifically slide in the first mounting holes of the mounting members and are not in direct contact with the side plates. When the first mounting holes are damaged, the mounting members can be directly replaced, the whole side plates do not need to be integrally dismounted and mounted, the maintenance operation is simple, and the efficiency is high.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/04 - Coating on selected surface areas, e.g. using masks
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
The present disclosure relates to a semiconductor device. In embodiments, a semiconductor device includes: a first base, including a front surface and a back surface, and including a first main gas inlet channel, a second main gas inlet channel, a first split channel, and a first through hole; a second base, connected to the back surface of the first base, and including the first main gas inlet channel, the second main gas inlet channel, a second split channel and a second through hole; and a base cover plate, connected to the front surface of the first base, and including the first main gas inlet channel, the second main gas inlet channel, a third split channel, and a third through hole, the base cover plate receiving a first gas through the first main gas inlet channel and receiving a second gas through the second main gas inlet channel, where the first gas and the second gas are delivered to the front surface of the first base through the first through hole and the third through hole, and the first gas and the second gas are delivered to the back surface of the first base through the first through hole and the second through hole.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A diffusion method, comprising: a pre-step, involving: feeding a plurality of carrying apparatuses into a process chamber, each carrying apparatus carrying a plurality of devices to be processed, and executing a pre-operation; a blowing step, involving: introducing a set gas to blow the inside of the process chamber, so as to maintain an atmosphere inside the process chamber; a deposition step, involving: introducing a reaction gas to perform a reaction inside the process chamber, and controlling a pressure change inside the process chamber, with a change amount being ΔP; a cyclic determination step, involving: cyclically executing the blowing step and the deposition step, and determining whether the number of cycles of the blowing step and the deposition step is greater than or equal to a set number of times, and if the number of cycles of the blowing step and the deposition step is greater than or equal to the set number of times, executing a post-step below, wherein the set number of times is greater than 1; and the post-step, involving: executing a post-operation on the deposited devices to be processed. The solution can improve the diffusion uniformity of devices to be processed of carrying apparatuses on at least some positions inside a process chamber. To this end, further provided in the present application is a diffusion device.
H01L 21/225 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
8.
METHOD AND DEVICE FOR DEPOSITING THIN FILM, AND THIN FILM
The present disclosure relates to a method and apparatus for depositing a thin film, and a thin film. According to an embodiment of the present disclosure, a method for depositing a thin film includes: providing a substrate into a reaction chamber, the reaction chamber including one or more first chemical reactant outlets, and one or more second chemical reactant outlets spatially independent of the one or more first chemical reactant outlets; and making a relative displacement of the substrate to the one or more first chemical reactant outlets and the one or more second chemical reactant outlets, where at least one of a first chemical reactant passing through the first chemical reactant outlet and a second chemical reactant passing through the second chemical reactant outlet are applied to the substrate in a pulse form.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
The present application belongs to the technical field of solar cells, and specifically relates to a TOPCon solar cell and a preparation method therefor. In the present application, a tunnel oxide layer is deposited by means of a combination of PECVD and PEALD. A thin oxide layer with a thickness of 0.1-0.5 nm is pre-deposited by means of PECVD, wherein in a subsequent PEALD process, the thin oxide layer chemically passivates a surface of a substrate, and then the PEALD process is used to uniformly deposit a tunnel oxide layer on the basis of the oxide layer. The basic principle of such growth mode is atomic layer deposition, the uniformity of the oxide layer is good, and the influence of an airflow, temperature, electric field and radio frequency in a tube is relatively small; therefore, electroluminescence test defects such as dark spots caused by producing the tunnel oxide layer completely by means of nitrous oxide ionization can be avoided, and the influence of damage of plasma bombardment to the surface of a substrate can be reduced, thereby improving to a certain extent the conversion efficiency of the TOPCon solar cell.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0747 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
10.
GAS UNIFORMIZING MEMBER, REACTION CAVITY STRUCTURE, AND COATING APPARATUS
The present application relates to a gas uniformizing member, a reaction cavity structure and a coating apparatus. The gas uniformizing member is mounted on a processing assembly; a gas suction opening and a processing position are provided on the processing assembly; the gas uniformizing member comprises a gas uniformizing structure, which encloses the processing position; the gas suction opening is located on the side of the gas uniformizing structure facing away from the processing position; and a plurality of gas uniformizing holes are arranged at intervals in a circumferential side wall of the gas uniformizing structure, and each gas uniformizing hole penetrates the gas uniformizing structure. In this way, a suction force generated at the gas suction opening does not directly act on the processing position, but is distributed into the gas uniformizing holes by means of the gas uniformizing member; a process gas at the processing position is suctioned by means of the plurality of gas uniformizing holes surrounding the processing position, such that an airflow generated by the process gas is more uniform; and by means of the plurality of gas uniformizing holes, the suction range can be wider, and the process gas at the processing position can also be suctioned more thoroughly.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
11.
FURNACE DOOR STRUCTURE FOR DIFFUSION FURNACE, AND DIFFUSION FURNACE
A furnace door structure for a diffusion furnace, and a diffusion furnace. The furnace door structure comprises a metal furnace door, a hanging assembly, and a heat radiation blocking piece, and the metal furnace door is movably connected to the heat radiation blocking piece by means of the hanging assembly. The heat radiation blocking piece in the present invention is hung on the metal furnace door to form a combined furnace door structure, thereby simultaneously avoiding the fragility of a furnace door made of a quartz material and the contamination of a furnace door made of a metal material to a diffusion process. Due to the use of hanging installation, installation and disassembly of the heat radiation blocking piece and the metal furnace door are easier, and adjustment is more convenient.
F27D 1/18 - Door framesDoors, lids or removable covers
C30B 31/06 - Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structureApparatus therefor by contacting with diffusion material in the gaseous state
H01L 21/22 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant
The present application relates to a filtering device and a coating system. A reaction cavity is formed in a housing, and a gas inlet and a gas outlet are provided on the housing. First flow guide assemblies and second flow guide assemblies are all disposed in the reaction cavity and are alternately arranged at intervals in the flow direction of a gas flow. In the flow direction of the gas flow, the orthographic projections of first filter plates do not overlap the orthographic projections of second filter plates. After tail gas flows into a flow guide cavity through a first filter plate, the flow direction of the tail gas changes under the guidance of a second flow guide plate, and the tail gas then flows toward a second filter plate in the extension direction of the second flow guide plate; and after the tail gas flows into a flow guide cavity through the second filter plate, the flow direction of the tail gas changes under the guidance of a first flow guide plate, and the tail gas then flows toward a first filter plate in the extension direction of the first flow guide plate. In this way, the flow path of the tail gas in the flow guide cavities can be extended.
B01D 46/12 - Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces in multiple arrangements
B01D 46/42 - Auxiliary equipment or operation thereof
B01D 53/00 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols
The present application relates to a furnace door apparatus and a diffusion furnace. The furnace door apparatus comprises: a furnace door body; an adjusting member, connected to the furnace door body and controllably driving the furnace door body to move in a first direction, the first direction being parallel to a direction of the axis of the furnace door body; and a hydraulic buffer, installed on the adjusting member, the hydraulic buffer comprising a piston rod compressible in the first direction, and the piston rod abutting against the furnace door body. Impact generated when the furnace door body is in contact with the furnace tube can be absorbed by the hydraulic buffer, so that the vibration and noise generated when the furnace door body closes the furnace tube are reduced and the probability of the furnace door body breaking the furnace tube is reduced. Further, the startup rate of the diffusion furnace is increased, the mechanical service life is prolonged, the maintenance costs are reduced, the mechanical design is simplified, and the production efficiency of semiconductors is improved.
F16F 9/32 - Springs, vibration-dampers, shock-absorbers, or similarly-constructed movement-dampers using a fluid or the equivalent as damping medium Details
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
A spray plate, a spray method and a treatment device. The spray plate comprises a plate body having a gas outlet face, the plate body thereof being internally provided with at least two spray flow channel groups, and the at least two spray flow channel groups being successively arranged within a spray surface of the spray plate; each spray flow channel group comprises at least two process gas flow channels, the at least two process gas flow channels being offset with respect to each other in the thickness direction of the plate body; each process gas flow channel comprises a main gas channel, a plurality of spray gas channels and a plurality of gas outlet holes, the main gas channel being separately communicated with the plurality of spray gas channels, the plurality of gas outlet holes being arranged at intervals in the spray gas channels, and all of the plurality of gas outlet holes being arranged in the gas outlet face of the plate body. The present solution can partition the spray surface into multiple regions so as to effectively shorten the length of the flow channels and accordingly reduce the pressure drop, such that the amount of gas discharged from the gas outlet holes in the same flow path is reasonably controlled, thus effectively improving the gas outlet uniformity of the spray plate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
15.
PROCESSING APPARATUS, COATING APPARATUS, ADJUSTMENT MEMBER, AND PROCESSING METHOD
The present application relates to a processing apparatus, a coating apparatus, an adjustment member and a processing method. The processing apparatus (100) comprises a gas output structure (30) and a gas equalization plate (10), wherein the gas output structure (30) is provided with a fitting position; a first gas hole is provided at the fitting position; the gas equalization plate (10) is provided with a second gas hole (14), and the gas equalization plate (10) is fitted at the fitting position; and the second gas hole (14) is in communication with the first gas hole.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
16.
SPRAY STRUCTURE, REACTION CHAMBER, COATING DEVICE AND COATING METHOD
The present application discloses a spray structure, a reaction chamber, a coating device and a coating method, belonging to the technical field of coatings. The spray structure comprises a top plate and spray modules, multiple spray modules being mounted at intervals on the top plate, and a spray module being a cavity-shaped body having an opening; a chemical source tube is provided in the spray module, and multiple chemical source spray holes are provided on the chemical source tube; the top plate is provided with air release holes in communication with the spray modules; in a working state, a barrier gas and each spray module form an enclosed space with a gap, the gap being located at the opening of the spray module facing a substrate, and a chemical source is sprayed toward the substrate through the chemical source spray holes and the gap, to treat the substrate. The spray structure provided in the present application is provided with multiple independent spray modules, and a chemical source tube is disposed in a spray module. In a working state, the chemical source can be isolated in each spray module by combined action of a barrier gas and the spray module, thereby effectively reducing the amount of dust generated during surface treatment of a substrate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
17.
ATOMIC LAYER DEPOSITION APPARATUS AND PROCESS METHOD THEREFOR
Disclosed in the present application is an atomic layer deposition apparatus. The atomic layer deposition apparatus comprises a negative pressure pump and at least two process cavities. The negative pressure pump is in communication with each process cavity by means of an airflow pipeline. The airflow pipeline comprises a cooling pipeline and airflow branches. Each process cavity is correspondingly provided with one airflow branch, and the cooling pipeline is in communication with the at least two process cavities on a one-to-one basis by means of the airflow branches. The cooling pipeline comprises a first cooling pipeline and a second cooling pipeline which are connected in parallel, wherein the first cooling pipeline is provided with a first valve, the second cooling pipeline is provided with a second valve, and at least one of the first cooling pipeline and the second cooling pipeline is provided with a cold trap connected in series thereto. In this way, the present application can reduce the generation of dust in the atomic layer deposition apparatus, reduce pipeline blockage and apparatus damage, and increase the apparatus utilization rate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
18.
SUBSTRATE GRABBING MECHANISM, SUBSTRATE TRANSFERRING DEVICE AND SUBSTRATE TRANSFERRING METHOD
The present application provides a substrate grabbing mechanism, a substrate transferring device and a substrate transferring method. The mechanism comprises at least one suction unit, each suction unit comprising a first suction cup assembly, a second suction cup assembly and a fine adjustment assembly. The first suction cup assembly is used for suction of first substrates; the second suction cup assembly is arranged opposite to the first suction cup assembly in a first direction, and is used for suction of second substrates; the fine adjustment assembly is arranged on the first suction cup assembly and/or the second suction cup assembly, and is used for adjusting the relative positions of the first suction cup assembly and the second suction cup assembly in a second direction, the second direction intersecting the first direction; the first suction cup assembly and the second suction cup assembly can get close to each other in the first direction until the first substrates and the second substrates are alternately arranged in the second direction, or the first suction cup assembly and the second suction cup assembly can be moved away from each other in the first direction. The substrate grabbing mechanism in the present application can prevent scratches of substrates while improving working efficiency.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
19.
PROCESSING DEVICE, LIMITING ASSEMBLY, AND METHOD OF USING PROCESSING DEVICE
The present application relates to the technical field of photovoltaic production apparatuses, and provides a processing device, a limiting assembly, and a method of using the processing device. A furnace body is provided with an opening; a cavity is sleeved in the furnace body through the opening, and protrudes out from the opening and extends to form an extending part; the limiting assembly is used for limiting movement of the cavity. By providing the limiting assembly, the movement of the cavity relative to the furnace body in two directions is limited, thereby reducing the risk of cavity breaking and prolonging the service life of the processing device.
A preparation method for an alloy thin film, comprising: providing a reaction chamber, wherein a spraying device and a bearing platform are arranged in the reaction chamber; placing a front-end-of-line structure on the surface of the bearing platform; forming, on the surface of the front-end-of-line structure, an alloy thin film in which a first element to the M-th element have a characteristic atomic ratio, wherein the step comprises: configuring the spraying device to have a characteristic temperature, setting a characteristic distance between the spraying device and the bearing platform, configuring a flow stabilizing device to have a characteristic flow, and introducing a first precursor to the M-th precursor into the chamber under the conditions of the characteristic temperature, the characteristic distance and the characteristic flow, wherein M is an integer greater than or equal to 2; and adjusting the characteristic atomic ratio by adjusting the value of any one or more parameters, i.e., the characteristic temperature, the characteristic distance and the characteristic flow. The preparation method for an alloy thin film has a simple process, and the alloy thin film can achieve controllable adjustment of the atomic ratio between different elements.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
A reaction device, a semiconductor coating device, and a coating method thereof. The reaction device comprises a reaction chamber, a first cover plate, an air inlet assembly, and a homogenizing board. A reaction cavity is formed in the reaction chamber and used for bearing a reactant, and the reaction chamber comprises a first end and a second end which are oppositely arranged. The first cover plate covers the first end. The air inlet assembly is provided on the first cover plate, and the air inlet assembly is communicated with the reaction cavity. The homogenizing board is arranged between the first cover plate and the reaction chamber. The arrangement direction of the first cover plate and the homogenizing board is perpendicular to the vertical axis of the reactant, the wall surface of the homogenizing board facing the first cover plate is configured in a raised mode, and the wall face of the first cover plate facing the homogenizing board is arranged in a sunken mode. On the basis of the structure, a reaction source can be diffused more uniformly in the process of entering the reaction chamber, so that the distribution of the reaction source on the reactant is more uniform, and the film thickness uniformity between reactants is better.
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
C30B 25/08 - Reaction chambersSelection of materials therefor
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Provided is substrate treating apparatus and method. Apparatus has thermal ALD processing unit and PECVD processing unit integrated. Thermal ALD processing unit comprises carrier gas source, first pipelines, second pipelines, source bottle, oxidation source, first fluid valves, second fluid valves and apparatus cavity; apparatus cavity accommodates substrate, serves as reaction place for substrate; first pipelines and second pipelines are transmitting carrier gas to cavity; carrier gas source provides carrier gas: oxidation source provides oxidizing agent; source bottle accommodates chemical source; when introduced into source bottle, carrier gas carries chemical source into apparatus; first fluid valves controls chemical source to flow or not through first pipelines; second fluid valves controls oxidizing agent to flow or not through second pipelines. Apparatus carries out hot atomic layer deposition on substrate on tubular PECVD apparatus platform, combines aluminum oxide deposition process and silicon nitride deposition process into one apparatus.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
The present application relates to a treatment device (100). The treatment device (100) comprises a cavity body (10), a carrier (40), and a spray member (50); the cavity body (10) is provided with a chamber; the carrier (40) is operatively arranged in the chamber; the carrier (40) is configured to be capable of guiding flow in a first direction (X), and is used for carrying a substrate arranged on a flow guide path of the carrier (40); the spray member (50) is arranged in the chamber and covers an inlet end of the carrier (40) in the first direction (X); and the spray member (50) is used for conveying gas to the carrier (40).
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
24.
PROCESSING CHAMBER, SUBSTRATE PROCESSING METHOD, AND PROCESSING APPARATUS
The present application discloses a processing chamber, a substrate processing method, and a processing apparatus. The processing chamber comprises a cavity assembly and a cavity door assembly; the cavity assembly comprises a cavity; the cavity door assembly comprises a spraying plate and a cavity door; the spraying plate is arranged on the cavity door; when the cavity door assembly is turned off, the spraying plate covers one end of the cavity; the cavity and the spraying plate define a processing space; and the spraying plate can introduce processing gas into the processing space. According to the processing chamber provided by the present application, the spraying plate covers the cavity, the processing chamber and an internal structure thereof are simplified, and the internal space of the cavity is expanded when the processing chamber occupies the same use space, so that the cavity can accommodate larger and more substrates, the production capacity of processing is improved, and the production cost of processing is reduced. The spraying plate is used for introducing processing gas into the processing space, so that the gas flow in the processing space is more uniform and stable, thereby improving the uniformity of substrate processing.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
25.
PROCESSING APPARATUS AND USE METHOD FOR PROCESSING APPARATUS
A processing apparatus and a use method for the processing apparatus. The processing apparatus comprises a housing, a carrier and a cover pressing device, wherein the carrier is arranged in an inner cavity of the housing; the carrier comprises a body portion and an upper cover, one side of the body portion being of an open structure, and the upper cover covering the open structure; and the cover pressing device is arranged on the housing and can press the upper cover, such that the upper cover is attached to the body portion. The upper cover is not covered on the body portion only by means of its own gravity, and combined with the driving action of the cover pressing device, the sealing property between the upper cover and the body portion can be ensured.
A processing apparatus, a carrier for the processing apparatus, and a use method for the processing apparatus. The processing apparatus comprises the carrier; and the carrier comprises a body portion and an upper cover, wherein openings are respectively formed on two opposite ends of the body portion, the opening at one end forms a gas inlet, and the opening at the other end forms a gas outlet; and the top of the body portion is of an open structure, the upper cover covers on an upper portion of the body portion, a gas flow channel is formed by means of enclosure of the upper cover and the body portion, and the gas inlet, the gas flow channel and the gas outlet are in communication with one another in sequence. The processing apparatus can ensure a processing effect of gas participation.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The present application provides a heating disc and a manufacturing method therefor, and a semiconductor device. The heating disc comprises a temperature adjusting layer. The temperature adjusting layer comprises a plurality of temperature adjusting regions, and the difference of the areas between the plurality of temperature adjusting regions is smaller than a target threshold, that is, the areas between the plurality of temperature adjusting regions are basically equal. At least one metal loop is arranged in each temperature adjusting region, the temperature of the temperature adjusting regions is adjusted by using the metal loops, and the temperature difference between different temperature adjusting regions of the heating disc is reduced, so that the temperature between the plurality of temperature adjusting regions is the same, that is, the temperature of a certain temperature adjusting region is finely adjusted by using a metal loop corresponding to the temperature adjusting region, the temperature equilibrium between different temperature adjusting regions is achieved, and then the temperature uniformity of the heating disc is improved.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
28.
AIR GUIDE APPARATUS, CAVITY STRUCTURE AND USE METHOD THEREOF, AND TREATMENT DEVICE
The present application relates to an air guide apparatus, a cavity structure and a use method thereof, and a treatment device. The air guide apparatus comprises: an air guide cylinder configured to be connected to a channel structure; a pushing member movably arranged on a treatment cavity in a set direction; a power source arranged on the treatment cavity and used for driving the pushing member to move towards the channel structure; and an elastic assembly connected between the air guide cylinder and the pushing member in the set direction to be elastically deformable.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
F16L 27/12 - Adjustable jointsJoints allowing movement allowing substantial longitudinal adjustment or movement
Provided in the present application are a carrier boat, a processing apparatus, and a control method for a pressure drop in a carrier boat. The carrier boat comprises a boat body and a front-facing flow equalizing plate, wherein an accommodating cavity with openings at two ends is arranged in the boat body, several parts to be processed are arranged at intervals in the accommodating cavity, and the front-facing flow equalizing plate is arranged at an opening at one end of the accommodating cavity in the boat body, so as to fill the opening end of the accommodating cavity in the boat body; and several first blocking members arranged at intervals are arranged in the front-facing flow equalizing plate, a first gap between adjacent first blocking members is in communication with a second gap between adjacent parts to be processed, and when an external reaction source carried by nitrogen passes through the front-facing flow equalizing plate from the interior of a source bottle, since the front-facing flow equalizing plate is formed by means of the combination, in a manner of being at equal intervals, of a plurality of front-facing blocking members which are densely distributed, the front-facing flow equalizing plate can redistribute the source-carrying gas evenly into the boat body by means of the first gaps between the front-facing blocking members on the front-facing flow equalizing plate, such that the source-carrying gas that entered the boat body flows, in parallel and evenly, through the parts to be processed.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
30.
HEATER, TREATMENT CHAMBER, TREATMENT DEVICE AND CONTROL METHOD THEREFOR
The present application relates to a heater, a treatment chamber, a treatment device and a control method therefor. The heater comprises a heating member and a heat-conducting structure, a gas flow channel is formed in the heat-conducting structure, and the heat-conducting structure is located within a heating range of the heating member. The heating member is used for heating gas flowing in the gas flow channel.
C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
C23C 16/52 - Controlling or regulating the coating process
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
31.
WAFER PROCESSING SYSTEM AND METHOD, CARRIER, SUPPORTING ASSEMBLY, SUCTION CUP ASSEMBLY, AND WAFER INSERTING METHOD
A wafer processing system and method, a carrier, a supporting assembly, a suction cup assembly, and a wafer inserting method, relating to the technical field of wafer processing. The wafer processing system (100) comprises a carrier (10), a supporting assembly (20), and a suction cup assembly (30); the carrier (10) is provided with a plurality of stations (14) for accommodating wafers (50); the suction cup assembly (30) can transfer the wafers (50) into the supporting assembly (20) or take the wafers (50) out of the supporting assembly (20); the supporting assembly (20) can stably place the wafers (50) into the stations (14) of the carrier (10), or stably eject the wafers (50) accommodated in the stations (14) out of the carrier (10). According to the wafer processing system provided by the present application, the supporting assembly can stably place the wafers into the carrier or eject the wafers out of the carrier, and the suction cup assembly places the wafers into the supporting assembly or takes the wafers out of the supporting assembly, so that the wafers can be stably transferred between the suction cup assembly and the supporting assembly and between the supporting assembly and the carrier, thereby achieving stable taking and placing of the wafers. Therefore, the yield of wafers can be improved.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
32.
SUBSTRATE TREATMENT APPARATUS AND TREATMENT METHOD
The present application belongs to the technical field of substrate treatment. Disclosed are a substrate treatment apparatus and treatment method. The substrate treatment apparatus comprises a cavity and a plurality of unit gas chambers, which are accommodated in the cavity, wherein the plurality of unit gas chambers are correspondingly provided with openings; a treatment gas is introduced into each unit gas chamber; when a substrate to be subjected to deposition passes through the openings to move between the plurality of unit gas chambers, the treatment gas in each unit gas chamber can perform a treatment on the substrate to be subjected to deposition; and an isolation gas is introduced into the cavity, does not react with the treatment gases, and is configured to prevent the treatment gases from overflowing through the openings. In the substrate treatment apparatus provided in the present application, the plurality of unit gas chambers, which are separate from one another, are accommodated in the cavity, such that the treatment gases in the unit gas chambers cannot come into contact with one another and react with one another, thereby preventing accumulated powder from being generated in the cavity.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
C23C 16/54 - Apparatus specially adapted for continuous coating
33.
LOADING AND UNLOADING SYSTEM, CARRYING BOAT, SUCTION CUP ASSEMBLY, AND SUBSTRATE LOADING METHOD
Disclosed are a loading and unloading system (1), a carrying boat (11), a suction cup assembly (13), and a substrate loading method. The loading and unloading system comprises the carrying boat, a basket (12), and the suction cup assembly; the suction cup assembly is used for transferring substrates between the carrying boat and the basket; the carrying boat is provided with a plurality of groups of workstations (110) arranged in a first direction, each group of workstations is used for carrying M substrates, and the basket is used for carrying N substrates, M and N being not equal. By means of the method, the number of substrates carried in the carrying boat and the basket can be converted, the efficiency of substrate loading is improved, and the production capacity of the loading and unloading system is improved.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
A gas pressure calibration apparatus (10), comprising: one or more treatment chambers (110; 120), each of the one or more treatment chambers (110; 120) comprising one or more gas conveying pipelines (11a, 11b, 11c, 11d; 12a, 12b, 12c, 12d), wherein each of the one or more gas conveying pipelines (11a, 11b, 11c, 11d; 12a, 12b, 12c, 12d) comprises a metering valve (111, 112, 113, 114; 121, 122, 123, 124); a main gas inlet pipeline (108), which is connected to each of the one or more gas conveying pipelines (11a, 11b, 11c, 11d; 12a, 12b, 12c, 12d); a flow control line (107), which is connected in series to the main gas inlet pipeline (108); and a calibration line (106), which is connected in parallel to the flow control line (107) and configured to calibrate the gas flow of each of the one or more gas conveying pipelines (11a, 11b, 11c, 11d; 12a, 12b, 12c, 12d).
C23C 16/52 - Controlling or regulating the coating process
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
35.
LOAD LOCK CHAMBER AND CLEANING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE
The present application relates to a load lock chamber and a cleaning method therefor, and a semiconductor device. The load lock chamber comprises a chamber body. The chamber body is internally provided with at least one load-lock, and is provided with an air inlet portion and an air outlet portion which are communicated with each load-lock. The chamber body is provided with at least one dispersion portion, each dispersion portion is arranged to correspond to one load-lock, each dispersion portion comprises a plurality of independently formed dispersion holes, and each dispersion hole is communicated with the air inlet portion and the corresponding load-lock and is used for dispersing airflow entering the corresponding load-lock.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B08B 5/00 - Cleaning by methods involving the use of air flow or gas flow
A spray plate (100), a processing device (10), and a spray method. The spray plate (100) comprises a plate body (110), wherein a gas distribution system (120) is formed in the plate body; and the gas distribution system (120) comprises a main gas inlet channel (121), a transition channel (122) and a spray channel (123). A process gas firstly enters the plate body (110) from the main gas inlet channel (121), then enters the spray channel (123) after being transferred by means of the transition channel (122), and is finally guided into a processing chamber (100) from a gas outlet surface (111) by means of a spray hole (1231). The transition channel (122) can achieve a buffering effect, thereby preventing gas pressure in the spray channel (123) from being directly affected by the fluctuation of gas pressure in the main gas inlet channel (121), and thus maintaining good consistency of the gas pressure in the spray channel (123). Therefore, after being transferred by means of the transition channel (122), a gas flow sprayed from each area of the gas outlet surface (111) is more balanced, thereby improving the distribution uniformity of the process gas in the processing chamber (100).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
37.
WAFER PROCESSING DEVICE, WAFER PROCESSING SYSTEM AND CONTROL METHOD
The present disclosure provides a wafer processing device, a wafer processing system and a control method. The wafer processing device includes a driving unit, a transfer chamber, a plurality of process chambers and a bearing assembly; the bearing assembly is arranged in the transfer chamber, the process chamber is coupled to the transfer chamber, the process chamber is used for processing wafers, the bearing assembly is used for supporting the wafer, the driving unit is used for adjusting a position of the bearing assembly in the transfer chamber, and the driving unit is further used for driving the bearing assembly to move between the transfer chamber and the process chambers. The wafer processing device of the present disclosure can directly transport the wafers to be processed to the process chambers by the driving unit for the processing treatment, and can retain or transfer the wafers to be transferred or not to be directly processed in the transfer chamber, thus reducing the time of wafers occupying the working station due to different groups of wafers waiting for process, which will speed up the processing efficiency of the wafers and provide basic conditions for synchronously processing groups of wafers by the transfer chamber and the bearing assembly.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
38.
METHOD AND DEVICE FOR DEPOSITING THIN FILM, AND THIN FILM
A method and device for depositing a thin film, and a thin film. The method for depositing a thin film comprises: providing a substrate (403, 503) into a reaction chamber (40, 50) containing one or more first chemical reactant outlets and one or more second chemical reactant outlets spatially independent from the one or more first chemical reactant outlets; and enabling relative displacement to occur between the substrate (403, 503) and the one or more first chemical reactant outlets and one or more second chemical reactant outlets, wherein at least one among a first chemical reactant passing through the first chemical reactant outlet and a second chemical reactant passing through the second chemical reactant outlet is applied to the substrate (403, 503) in the form of a pulse.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
An atomic layer deposition apparatus (10, 20). The atomic layer deposition apparatus (10, 20) comprises: a transition cavity (102, 202), a diffusion cavity (110, 210) and one or more air exhaust structures (112, 212, 216). The transition cavity (102, 202) is provided with an air inlet (102a) for receiving gas. The diffusion cavity (110, 210) extends from a first end (110a) to a second end (110b), the width of the first end (110a) in a radial direction is less than the width of the second end (110b) in the radial direction, and the diffusion cavity (110, 210) is in communication with the transition cavity (102, 202) such that same are configured to accommodate a semiconductor wafer (126) to be subjected to deposition. The one or more air exhaust structures (112, 212, 216) are in communication with the diffusion cavity (110, 210). Compared with the prior art, in the atomic layer deposition apparatus (10, 20), the cavity structure and a source feeding mode of the deposition apparatus are improved, so that the time for each cycle of a deposition process is shortened, and the deposition efficiency is improved.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
Goods & Services
(1) Machines for manufacturing photovoltaic cells and solar cells; battery core processing machine for use in battery manufacturing; machines for the electronic industry, namely machines for surface deposition, coating machines, electrostatic coating machines; electrostatic generators; machines for manufacturing semiconductors; semiconductor wafer processing equipment; machines for manufacturing liquid crystal display devices; chemical vapor deposition [CVD] reactors for semiconductor manufacturing machines; physical vapor deposition reactors for semiconductor manufacturing machines; etching apparatus for use in manufacturing display panels; electrostatic coating machines.
(2) Photovoltaic cells; measuring instruments; heat regulating apparatus; air analysis apparatus; surveying apparatus and instruments; gas testing instruments; semi-conductors; optical apparatus and instruments; electrolysis apparatus for laboratory use; ionization apparatus not for the treatment of air or water. (1) Repair of electronic apparatus; heating equipment installation and repair; repair or maintenance of machines and systems for manufacturing semi-conductors; repair of power lines; machinery installation, maintenance and repair; office machines and equipment installation, maintenance and repair; electric appliance installation and repair.
41.
SPRAY ASSEMBLY, SEMICONDUCTOR DEVICE, AND WAFER PROCESSING METHOD
A spray assembly, a semiconductor device, and a wafer processing method. An annular spray plate is provided, multiple independent spray regions are formed in an annular region of the spray plate, and the flow rate, concentration and the like of introduced reactants can be respectively adjusted according to requirements; and these spray regions are annularly distributed and can be arranged in an edge region of a central air inlet, the flow rate, concentration and the like of reactants introduced into different spray regions can be respectively adjusted according to requirements, and then the consistency of wafer surface process parameters is adjusted, thereby achieving the objective of improving the uniformity of deposition thicknesses of an edge region and a central region of a wafer.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
42.
CHARGE STORAGE STRUCTURE AND METHOD FOR MANUFACTURING SAME
Embodiments of the present application relate to a charge storage structure and a method for manufacturing same. The charge storage structure according to an embodiment comprises: a wafer, a first polarity region, and a second polarity region. The wafer is provided with a first surface and a second surface which is opposite to the first surface, wherein the first surface is provided with a first textured surface, and the second surface comprises a first part having a second textured surface and a second part connected to the first part. The first polarity region is configured to be in contact with the first part of the second surface. The second polarity region is spaced apart from the first polarity region and is configured to be adjacent to the second part of the second surface. The first textured surface and the second textured surface are different. The charge storage structure and the manufacturing method therefor provided by the embodiments of the present application have the advantages of lower manufacturing cost and higher manufacturing efficiency, and a textured surface on the front of a battery and a textured surface at an opening on the back of the battery can be flexibly arranged according to specific requirements, thereby meeting different product requirements.
The embodiments of the present application relate to a gas pressure measurement device and a deposition apparatus. The gas pressure measurement device according to an embodiment comprises a main body, a sampling pipeline, and a first port, wherein the sampling pipeline is arranged in the main body and is configured to collect gas in a reaction region to be subjected to measurement; and the first port is arranged in the sampling pipeline and is configured to be connected to a first sensor, so as to measure the pressure of the gas. The gas pressure measurement device provided in the embodiment of the present application can not only measure the pressure of the gas in the reaction region in the deposition apparatus, but can also prevent the product quality of a processing object in the reaction region from being affected.
The present disclosure relates to a semiconductor device. In various embodiments, the semiconductor device comprises: a first base, which is provided with a front surface and a back surface, and comprises a first main gas intake channel, a second main gas intake channel, a first flow distribution channel and a first through hole; a second base, which is connected to the back surface of the first base, and comprises a first main gas intake channel, a second main gas intake channel, a second flow distribution channel and a second through hole; and a base cover plate, which is connected to the front surface of the first base, and comprises a first main gas intake channel, a second main gas intake channel, a third flow distribution channel and a third through hole. The base cover plate receives a first gas by means of the first main gas intake channel and receives a second gas by means of the second main gas intake channel; and the first gas and the second gas are delivered to the front surface of the first base by means of the first through hole and the third through hole, and are delivered to the back surface of the first base by means of the first through hole and the second through hole.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Provided in the present invention are a substrate treating apparatus and method. The apparatus is integrated with a thermal ALD processing unit and a PECVD processing unit. The thermal ALD processing unit comprises a carrier gas source, a first pipeline, a second pipeline, a source bottle, an oxidation source, a first fluid valve, a second fluid valve and an apparatus cavity, wherein the apparatus cavity accommodates a substrate and serves as a reaction place for the substrate; the first pipeline and the second pipeline are both used for transmitting a carrier gas to the cavity; the carrier gas source is used for providing the carrier gas; the oxidation source is used for providing an oxidizing agent; the source bottle is used for accommodating a chemical source; when the carrier gas is introduced into the source bottle, the carrier gas can carry the chemical source into the apparatus cavity; the first fluid valve is used for controlling the chemical source to flow or not to flow through the first pipeline; and the second fluid valve is used for controlling the oxidizing agent to flow or not to flow through the second pipeline. The apparatus is used for carrying out hot atomic layer deposition on a substrate on a tubular PECVD apparatus platform, and combines an aluminum oxide deposition process and a silicon nitride deposition process into one apparatus.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Provided in the present invention are a wafer processing device, a wafer processing system and a control method. The wafer processing device comprises a driving apparatus, a conversion chamber, a processing chamber and a bearing assembly; the bearing assembly is provided in the conversion chamber; the processing chamber is communicated to the conversion chamber; the processing chamber is used for processing a wafer; the bearing assembly is used for bearing a wafer; the driving apparatus is used for adjusting the position of the bearing assembly in the conversion chamber, and the driving apparatus is used for driving the bearing assembly to move between the conversion chamber and the processing chamber. According to the wafer processing device of the present invention, a wafer to be processed can be directly delivered to the processing chamber for processing by means of the driving apparatus, and a wafer needing to be adjusted or a wafer not needing to be directly processed can be adjusted or reserved in the conversion chamber, so that the time spent on a working mechanism between different batches of wafers and wait time can be reduced, and meanwhile, basic conditions for synchronously processing multiple wafers or multiple batches of wafers can be provided by means of the conversion chamber and the bearing assembly.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
Machines for manufacturing photovoltaic cells and solar
cells; battery core processing machine for use in battery
manufacturing; machines for the electronic industry, namely
machines for surface deposition, coating machines,
electrostatic coating machines; electrostatic generators;
machines for manufacturing semiconductors; semiconductor
wafer processing equipment; machines for manufacturing
liquid crystal display devices; chemical vapor deposition
[CVD] reactors for semiconductor manufacturing machines;
physical vapor deposition reactors for semiconductor
manufacturing machines; etching apparatus for use in
manufacturing display panels; electrostatic coating
machines.
Machines for manufacturing photovoltaic cells and solar
cells; battery core processing machine for use in battery
manufacturing; machines for the electronic industry, namely
machines for surface deposition, coating machines,
electrostatic coating machines; electrostatic generators;
machines for manufacturing semiconductors; semiconductor
wafer processing equipment; machines for manufacturing
liquid crystal display devices; chemical vapor deposition
[CVD] reactors for semiconductor manufacturing machines;
physical vapor deposition reactors for semiconductor
manufacturing machines; etching apparatus for use in
manufacturing display panels; electrostatic coating
machines.
Machines for manufacturing photovoltaic cells and solar
cells; battery core processing machine for use in battery
manufacturing; machines for the electronic industry, namely
machines for surface deposition, coating machines,
electrostatic coating machines; electrostatic generators;
machines for manufacturing semiconductors; semiconductor
wafer processing equipment; machines for manufacturing
liquid crystal display devices; chemical vapor deposition
[CVD] reactors for semiconductor manufacturing machines;
physical vapor deposition reactors for semiconductor
manufacturing machines; etching apparatus for use in
manufacturing display panels; electrostatic coating
machines.
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
Goods & Services
Machines for manufacturing photovoltaic cells and solar
cells; battery core processing machine for use in battery
manufacturing; machines for the electronic industry, namely
machines for surface deposition, coating machines,
electrostatic coating machines; electrostatic generators;
machines for manufacturing semiconductors; semiconductor
wafer processing equipment; machines for manufacturing
liquid crystal display devices; chemical vapor deposition
[CVD] reactors for semiconductor manufacturing machines;
physical vapor deposition reactors for semiconductor
manufacturing machines; etching apparatus for use in
manufacturing display panels; electrostatic coating
machines. Photovoltaic cells; measuring instruments; heat regulating
apparatus; air analysis apparatus; surveying apparatus and
instruments; gas testing instruments; semi-conductors;
optical apparatus and instruments; electrolysis apparatus
for laboratory use; ionization apparatus not for the
treatment of air or water. Repair of electronic apparatus; heating equipment
installation and repair; repair or maintenance of machines
and systems for manufacturing semi-conductors; repair of
power lines; machinery installation, maintenance and repair;
office machines and equipment installation, maintenance and
repair; electric appliance installation and repair.
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
Goods & Services
Battery core processing machine for use in battery manufacturing; machines for the electronic industry, namely machines for surface deposition, coating machines, electrostatic coating machines; Electrostatic generators; Machines for manufacturing semiconductors; Semiconductor wafer processing equipment; Manufacturing machines for liquid crystal display devices; Etching apparatus for manufacturing display panel; Machines for manufacturing photovoltaic cells and solar cells. Measuring instruments; Heat regulating apparatus; Air analysis apparatus; Surveying apparatus and instruments; Gas testing instruments; Semi-conductors; Optical apparatus and instruments; Electrolysis apparatus for laboratory use; Ionization apparatus not for the treatment of air or water. Repair or maintenance of integrated circuits manufacturing machines and systems; Repair of electronic apparatus; Heating equipment installation and repair; Repair or maintenance of semiconductor manufacturing machines and system; Repair of power lines; Machinery installation, maintenance and repair; Office machines and equipment installation, maintenance and repair; Electric appliance installation and repair.
