A method for synthesizing cerium oxide, comprising: S1, preparing a reaction solution: preparing a cerium source aqueous solution and a precipitant aqueous solution; S2, precipitation reaction: adding the precipitant aqueous solution to the cerium source aqueous solution, uniformly stirring, and performing a precipitation reaction for 2.0-8.0 hours; and S3, high-temperature roasting: filtering a precipitate, washing and drying, and roasting the precipitate at a high temperature to obtain a cerium oxide product. According to the method, cerium oxide particles having uniform particle size and narrow particle size distribution can be prepared, and excellent polishing performance and wide popularization and application values are achieved.
The present invention provides a method for preparing an organic-inorganic nanocomposite particle dispersion liquid. The method comprises: preparing a negatively charged organic-inorganic nanocomposite particle dispersion liquid: adding positively charged inorganic nanoparticles into an anionic organic polymer solution, fully stirring, and uniformly dispersing to obtain the negatively charged organic-inorganic nanocomposite particle dispersion liquid; preparing a positively charged organic-inorganic nanocomposite particle dispersion liquid: adding a negatively charged organic polymer-inorganic metal oxide compound dispersion liquid into a cationic organic polymer solution, fully stirring, and uniformly dispersing to obtain a positively charged organic polymer-inorganic nanocomposite particle dispersion liquid; and alternately repeating steps (1) and (2), and respectively obtaining the negatively charged and positively charged organic-inorganic nanocomposite particle dispersion liquids by adjusting the number of steps (1) and (2). By means of said method, the performance of a CMP polishing solution can be effectively regulated and controlled.
Disclosed is a method for preparing a cerium oxide nanocomposite. The method comprises: step 1, bringing an anionic surface modifier into contact with an aqueous dispersion of cerium oxide nanoparticles to prepare a cerium oxide nanocomposite having negative charges on the surface thereof, wherein the anionic surface modifier is selected from an inorganic polybasic acid and a derivative thereof, and an anionic organic polymer; and step 2, bringing a cationic surface modifier into contact with the cerium oxide nanocomposite having negative charges on the surface thereof in the step 1 to obtain a cerium oxide nanocomposite having positive charges on the surface thereof, wherein the cationic surface modifier is selected from an inorganic Lewis acid and a derivative thereof, and a cationic organic polymer. By means of surface modification of nano-cerium oxide, the regulation of the chemical mechanical polishing performance of same is achieved, and the problems of an insufficient polishing speed of silicon oxide of the negatively charged cerium oxide particles and low planarization efficiency can be solved.
Disclosed is a chemical mechanical polishing solution, which contains water, cerium oxide, polyquatemium, carboxylic acid containing a benzene ring and polyvinylamine. The function of auto stop in its true sense can only be achieved by using polyquatemium, carboxylic acid containing a benzene ring and polyvinylamine together. On the blanks, the polishing rates are low, while at the high step heights of patterned silicon chips, high polishing rates are kept. The lower is the step height, the better is the polishing rate inhibited, and thus the function of auto stop is achieved.
Disclosed is a chemical mechanical polishing solution containing water, cerium oxide abrasive particles and hydroxylamine, which can also increase the removal rate of patterned silicon dioxide with further addition of 4-hydroxybenzoic acid or salicylhydroxamic acid.
A synthesis method for cerium oxide, comprising: adding a cerium source aqueous solution into a precipitant aqueous solution to generate a raw material solution; fully stirring the raw material solution, and carrying out a precipitation reaction; filtering the raw material solution to obtain gel state hydrogen cerium oxide; and preparing a gel state cerium oxide dispersion liquid, adding an oxidizing agent into the dispersion liquid, and placing the mixture in a closed container for a heating reaction. The synthesized cerium oxide has excellent polishing performance, and has a higher polishing selection ratio for different materials, and a defect of the surface of a polished material is effectively reduced.
A synthesis method for cerium oxide, comprising adding an aqueous cerium source solution to a precipitant solution to generate a raw material solution; introducing nitrogen gas into the raw material solution, and stirring the raw material solution sufficiently; filtering the raw material solution to obtain a precipitate; drying the precipitate under the protection of nitrogen gas; and firing the precipitate under the protection of nitrogen gas, so as to obtain cerium oxide. A use method for applying the cerium oxide for chemical mechanical polishing. The cerium oxide synthesized by means of the method has good CMP polishing activity.
Provided are a chemical mechanical polishing solution and a use method therefor. The chemical mechanical polishing solution contains cerium oxide abrasive particles, kojic acid and a pH regulator. The chemical mechanical polishing solution of the present invention can effectively reduce the sensibility of polishing rate to pressure, and can also ensure a polishing solution having an appropriate polishing rate.
The present invention provides a chemical-mechanical polishing liquid and a use method thereof. The polishing liquid contains cerium oxide abrasive particles and 2-methylamine ethanol. The polishing liquid of the present invention can effectively reduce the sensitivity of the polishing rate to the pressure, make the polishing process more controllable and stable, reduce the sensitivity to pressure. Therefore, the chemical-mechanical polishing liquid can be applied to a more extensive polishing material and usage scenario while maintaining the proper polishing rate and improving the polishing efficiency.
Provided are a chemical mechanical polishing solution and a use method therefor. The chemical mechanical polishing solution contains cerium oxide abrasive particles, hydroxylamine and a derivative thereof, and a pH regulator, wherein the cerium oxide abrasive particles carry positive charges on the surfaces thereof. With the use of the chemical mechanical polishing solution of the present invention, as the pattern step height on a wafer is reduced, the polishing rate of the polishing solution is also decreased, thereby achieving the function of auto-stop; and furthermore, the chemical mechanical polishing solution has mild use conditions, is capable of achieving large-scale production and use and is suitable for picture wafers with different patterns, and has wide application prospects in the art.
The present invention provides a chemical-mechanical polishing solution and a method for using same. The chemical-mechanical polishing solution comprises a cerium oxide abrasive particle, a hydroxylamine derivative, and a pH regulator. The chemical-mechanical polishing solution in the present invention can effectively reduce the sensitivity of the polishing rate to pressure, and can also ensure a proper polishing rate.
A chemical mechanical polishing slurry, including silicon dioxide particles, a nitrogen-containing heterocyclic compound having one or more carboxy group(s), and an ethoxylated butoxylated alky alcohol, and use of the chemical mechanical polishing slurry in the polishing silicon oxide, polysilicon, and silicon nitride. Polishing rate for silicon nitride using the polishing slurry is much higher than that for silicon oxide and polysilicon. The polishing slurry can be applied to chemical mechanical polishing in which silicon oxide/polysilicon is used as the stop layer, and can be used to control the amount of oxide and polysilicon removed from the substrate surface during polishing.
A chemical mechanical polishing liquid, comprising: a composite abrasive particle, an oxidant and water, wherein the composite abrasive particle is a composite oxide particle coated with two or more metal oxides selected from cerium oxide, titanium oxide, manganese dioxide and aluminum oxide. The chemical mechanical polishing liquid can be used for the chemical mechanical polishing of carbon-containing materials.
Disclosed are a chemical-mechanical polishing liquid and the use thereof in copper polishing. The chemical-mechanical polishing liquid comprises a non-ionic surfactant, abrasive particles and an oxidizing agent, wherein the non-ionic surfactant is an (ethoxylated)x(butoxylated)y alkyl alcohol, where x is 5-20, y is 5-20, and the alkyl is a linear or branched chain having 11-15 carbon atoms.
Disclosed is a chemical-mechanical polishing liquid, comprising abrasive particles, a metal corrosion inhibitor, a complexing agent, an oxidizing agent, and a polyoxyethylene-polyoxypropylene block copolymer surfactant. The chemical-mechanical polishing liquid can effectively reduce and control the generation of edge-over-erosion at a boundary between a dielectric material and a copper wire, and has a significant inhibitory effect on the removal rate of low-dielectric-constant materials while maintaining a high removal rate of tantalum and silicon dioxide, such that requirements for a polishing rate and selection ratio of various materials during polishing of a barrier layer are satisfied, a disc-shaped recess after polishing can be successfully controlled, and strict requirements for the smoothness of a polished interface during an advanced process are satisfied.
A chemical-mechanical polishing fluid, comprising water, ceric oxide, polyquaternium, a benzene ring-containing carboxylic acid, and polyvinylamine. Only when polyquaternium, the benzene ring-containing carboxylic acid, and polyvinulamine are used together, can an automatic stop function in the true sense be implemented, a low polishing speed is provided for a blank wafer, a high polishing speed is maintained at a high step height of a patterned silicon wafer, the lower the step height the better the suppression of the polishing speed, thus implementing the automatic stop function.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
A chemical-mechanical polishing solution, comprising: abrasive particles, a catalyst, a stabilizer, a cross-linked macromolecular surface defect inhibitor, an oxidant, water, and a pH adjuster. The chemical-mechanical polishing solution realizes simultaneous polishing of tungsten, silicon oxide, and silicon nitride, ensures high polishing speed of tungsten, moderate polishing speed of silicon oxide, and low polishing speed of silicon nitride, greatly reduces the surface defect of the polished silicon nitride surface, and realizes rapid planarization.
Provided is a chemical mechanical polishing solution. The chemical mechanical polishing solution contains water, cerium oxide abrasive particles and hydroxylamine. The chemical mechanical polishing solution can also improve the removal rate of a patterned silica sheet by means of the further addition of 4-hydroxybenzoic acid or salicylhydroxamic acid.
Provided is a chemical mechanical polishing solution, which comprises abrasive particles, a catalyst, a stabilizer, a corrosion inhibitor containing both an amino sugar and a cyclic alcohol structure, an oxidant, water and a pH adjusting agent. Provided is a chemical mechanical polishing solution, which can reduce the static corrosion rate of tungsten while ensuring a high polishing rate of tungsten and an intermediate polishing rate of silicon oxide, thereby improving the surface condition of a metal after same is polished and improving the yield.
Provided is a chemical-mechanical polishing liquid, comprising: abrasive particles, a catalyst, a stabilizer, a corrosion inhibitor containing an adenine organic acid structure, an oxidizer, water and a pH regulator. The present invention can not only polish tungsten metal and silicon oxide at the same time, but also maintains a relatively high polishing rate for the tungsten metal and a moderate polishing rate for the silicon oxide. In addition, the present invention effectively inhibits static corrosion of the tungsten metal and improves the metal surface condition after polishing.
The present invention discloses a chemical mechanical polishing slurry, and the chemical mechanical polishing slurry comprises silica abrasive particles and accelerating agents, wherein the accelerating agents are selected from pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound and their derivatives, which have one or more carboxyl groups, and pyrimidine compound and its derivatives, which have one or more amino groups. The chemical mechanical polishing slurry can simultaneously increase the removal rate of both silicon nitride and polysilicon.
The present invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizer, and at least one kind of polyacrylic acid anionic surfactant. The polishing slurry of the present invention can decrease the removal rate of tantalum while increasing the removal rate of copper, and reduce copper dishing and dielectric erosion after polish.
Disclosed is a chemico-mechanical polishing solution, comprising silica abrasion particles, a nitrogen-containing heterocyclic compound comprising one or more carboxyl groups, and an ethoxylated butoxylated alkyl alcohol. Also disclosed is a use of the chemico-mechanical polishing solution in the polishing of silica, polysilicon, and silicon nitride. The polishing solution of the present invention has a polishing rate for silicon nitride that is far higher than that for silica and polysilicon, and thus finds good use in the chemico-mechanical polishing of a silica/polysilicon stop layer, permitting a good control of the amount of removal of oxides and polysilicon on a substrate surface during the polishing process.
Disclosed is a chemical mechanical polishing solution. The polishing solution comprises abrasive particles, a water-soluble polymer, and a nonionic surfactant; the nonionic surfactant is polyvinylpyrrolidone. The polishing solution of the present invention has excellent stability, and can significantly change a polysilicon removal rate under alkaline conditions, thereby achieving adjustment to a selection ratio of polysilicon to silicon oxide and improving the polysilicon planarization efficiency.
Provided is a chemical-mechanical polishing solution, comprising silicon dioxide, at least one accelerator, and an azole compound or a derivative thereof. The chemical-mechanical polishing solution significantly increases the polishing speed for SiN with a lower polishing speed for TEOS, while decreases the polishing speed for copper. The present invention can repair a dish-shaped recess on a hybrid bonding surface in a shorter period of time.
Disclosed is a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizing agent, and at least one polyacrylic acid anionic surfactant. The chemical mechanical polishing solution in the present invention can increase the removal rate of copper and decrease the removal rate of tantalum, and reduce dishing and dielectric layer erosion of a polished copper wire.
Disclosed is a chemical-mechanical polishing liquid, comprising silicon dioxide abrasive particles, a corrosion inhibitor, a complexing agent, an oxidant and a sulfonate anionic surfactant. By using the polishing liquid disclosed in the present invention, the removal rate of copper can be improved while also reducing the removal rate of tantalum, and the phenomena of dish-shaped recessions and dielectric layer corrosion occurring on polished copper wires are improved.
Provided is a chemical-mechanical polishing solution, comprising a silicon dioxide abrasive particle and an accelerator. The accelerator is selected from pyridine, piperidine, pyrrolidine, and pyrrole compounds containing one or more carboxyl groups, a pyrimidine compound containing one or more amino groups, and a derivative thereof. The chemical-mechanical polishing solution can increase the removal rate of both silicon nitride and polycrystalline silicon.
The present invention relates to a chemically mechanical polishing liquid and an application thereof. The polishing liquid comprises grinding particles, an amino silane reagent, and water. The present invention is applicable to polishing of a blocking layer in a through silicon via (TSV) process, and may be further used to integrate polishing of a blocking layer in an integrated circuit copper interconnection process, polishing of a silicon dioxide interlayer dielectric, and polishing of a shallow slot isolation layer, and has a high blocking layer removal rate and high planarization efficiency in mild conditions. The polishing liquid can be used to prepare a high enriched product, can effectively reduce costs, and is convenient to store and transport.
The polishing liquid of the present invention provides for polishing of silicon dioxide at very high speed. By means of the synergistic effect of a silicon-containing organic compound and an amphoteric surfactant, high grinding speeds are achieved for a chemical mechanical polishing liquid and the stability problem of polishing liquids is resolved.
The present invention aims to providing a solution for poor stability of a polishing liquid prepared by amino silane modified grinding particles. The stability of the pH, nanometer particle size, and polishing speed of such a system in a period of storage can be significantly improved by adding an azole compound. The speed of removing a silica dielectric material by such a silica grinding particle polishing liquid is increased, and the stability of the pH, nanometer particle size, and polishing speed of the polishing liquid in the period of storage is also improved.
Disclosed is a method. A silicon-containing organic compound is adopted. A significant synergistic effect exists between the silicon-containing compound and other complexing agents, so as to greatly increase the polishing rate of silicon dioxide. Meanwhile, under high electrolyte ionic strength conditions, abrasive particles can be stabilized, and the stability of pH of the polishing liquid is improved, namely, the set pH of the abrasive particles is kept unchanged.
The present invention aims to provide an application of a composition in polishing of a barrier layer. The composition is added into a chemical mechanical polishing (CMP) liquid, the CMP liquid comprises silica sol, and the composition is tetramethylammonium hydroxide and sulfonic acid compound.
The present invention presents a chemical mechanical polishing (CMP) slurry, and the CMP slurry uses ceria as an abrasive and contains an organic polybasic acid and polymers. The CMP slurry disclosed in the present invention still has a high silicon dioxide polishing rate without adding chemical oxidants. Regulating the polishing slurry PH value enables a barrier layer polishing rate to be controlled within a range of 10-2000 A/min. Adding the polymers and adjusting the polishing slurry PH value realize the control of a selection ratio of the barrier layer (eg. Ta, Ti, TaN, and TiN) to the silicon dioxide polishing rate.
A cleaning fluid free of fluoride and hydroxylamine and used for removing a photoresist etching residue, and a composition thereof, the fluid, having a low etching property, comprising: a) an alcohol amine, b) a solvent, c) water, d) a phenol, e) an ethoxylated acetylenic alcohol compound, f) a hydrazine and a derivative thereof, and g) a polyol. The cleaning fluid for removing a photoresist etching residue and having a low etching property can rapidly remove a crosslinked and hardened photo-etching glue after complex chemical changes caused by hard baking, dry-etching, ashing and plasma implantation, and can remove the photoresist residue on a metal wire, a via and a metal pad wafer without attacking the substrate, including metals such as aluminum or copper and non-metals such as silicon dioxide. The cleaning fluid has a good prospect of application in the field of semiconductor chip cleaning and the like.
01 - Chemical and biological materials for industrial, scientific and agricultural use
03 - Cosmetics and toiletries; cleaning, bleaching, polishing and abrasive preparations
Goods & Services
Chemical preparations, namely, starch size, size for finishing and priming, auxiliary fluids for use with abrasives in integrated circuits manufacturing; degreasing preparations for use in manufacturing processes for integrated circuits, aggressor repellent chemicals for protecting metal surface, namely, chemical preservatives for use as corrosion inhibitors on metal surface; chemical reagents for non-medical purpose Stain removers, scouring liquids, volatile alkali ammonia detergent, drains preparations for clearing blocked drains, polishing preparations, industrial abrasives for use in the manufacture of integrated circuits, furbishing preparations for topography planarization and unwanted material removal in integrated circuits manufacturing process, abrasive sands
37.
CHEMICAL MECHANICAL POLISHING SLURRY FOR ALUMINUM AND USE THEREOF
Disclosed is a chemical mechanical polishing slurry for aluminum. The polishing slurry contains at least one kind of metal ions. With the addition of the metal ions, the polishing slurry of the present invention can have a high aluminum removal rate.
The invention relates to the application of a chemical mechanical polishing liquid for silicon polishing. The polishing liquid contains abrasive particles and organic amine. The polishing liquid of present invention has a high silicon-removing speed, can improve the hydrophilic properties of silicon wafer surfaces, and has the advantages of reducing the adsorption of the abrasive particles, and lowering down the haze of the wafer.
The present invention relates to a chemical-mechanical polishing liquid applied to the STI field, containing a cerium oxide abradant, a cyclic oligosaccharide compound, an organic high-molecular polymer and an organic polyacid. The cyclic oligosaccharide compound, the organic high-molecular polymer and the organic polyacid in the present invention have a synergistic effect, and by adjusting the contents of the substances and the combined use thereof, the effects of adjusting the selection ratio of silica/silicon nitride polishing to be greater than 30, avoiding or reducing the generation of defects such as recesses and scratches during the polishing, and a more stable solution are achieved.
The present invention relates to a chemical mechanical polishing liquid for polishing a cobalt barrier layer, the chemical mechanical polishing liquid containing abrasive particles, an azole compound, a complexing agent, a polyalkoxide and an oxidizing agent. The polishing liquid of the present invention has a relatively strong capacity for controlling metal cobalt corrosion.
An application of a phosphate ester surfactant in self-stopping polishing. The phosphate ester surfactant at least comprises a structural formula (1) and/or a structural formula (2), wherein X=RO, RO-(CH2CH2O)n, or RCOO-(CH2CH2O)n; R is an alkyl group or alkyl benzene of C8~C22, or glyceryl(C3H5O3-); n=2~30, and M=H, K, NH4, (CH2CH2O)1~3NH3~1 and/or Na.
Disclosed is an application of a chemical mechanical polishing agent in polishing of a silicon-based material. The polishing agent at least comprises grinding particles and an oxidant. The polishing agent can be used for polishing a silicon-based material such as a polycrystalline silicon and a monocrystalline silicon. The surface of a polished silicon-based chip has low roughness and good hydrophilicity; therefore, the surface defects can be lowered.
The present invention provides a chemical mechanical polishing slurry used for copper and an application thereof. The slurry comprises grinding particles, a complex agent, an oxidant, a corrosion inhibitor, and at least one type of a phosphate ester surfactant. The slurry of the present invention can be used to maintain a high copper removal rate, and improve disk-shaped recesses and over-polished windows of a copper wire after polishing. Few pollutants exist on the polished copper surface, and no defects such as corrosion exist.
Disclosed is a chemical mechanical polishing solution for shallow trench isolation technology, comprising a silicon dioxide abrasive, one or more anionic surfactants and water. The polishing solution has a relatively high removal speed for high density silicon dioxide (HDP-Oxide), a relatively high selection ratio of high density silicon dioxide (HDP-Oxide) to silicon nitride, a relatively high correction capability for the step structure of graphic wafers, and a relatively good surface uniformity.
The present invention provides an alkaline polishing solution for polishing a barrier layer, comprising grinding particles, an azole compound, C1-C4 quaternary ammonium alkali, an oxidant, water, and a surface active agent for adjusting surface flatness of a silicon slice. The polishing solution can effectively control erosion of a fine copper wire area, and realize overall planarization rapidly.
Disclosed is a chemical mechanical polishing solution. The polishing solution comprises water, ceria ground particulates, oxidizer and water soluble cyclic oligosaccharide. The chemical mechanical polishing solution in the present invention has a high SiO2 polishing rate, a high selection ratio of SiO2/Si3N4 removal rates, and a high Ta polishing rate. Meanwhile, the polishing solution is individually wrapped, and easy to use, and the polishing performance remains constant in a long time.
Disclosed is a chemical mechanical polishing solution for silicon through-holes, comprising at least a grinding particle, an azole compound, an acid, one or more anionic surfactants, and an oxidant. The polishing solution has a high silicon dioxide removal rate and a low silicon nitride removal rate, is capable of perform high-efficiency planarization on a silicon through-hole blocking layer, does not generate metal erosion at the same time, can linearly adjust a metallic copper removal rate, and has a high defect correction capability and a low surface pollutant index.
Disclosed are a chemical mechanical planarization slurry and an application thereof. The slurry comprises grinding particles, oxidizer, polishing rate enhancer, a corrosion inhibitor, polishing surface improver, and a carrier. The chemical mechanical planarization slurry can, through a polishing system, control the polishing rates of silicon and copper at the same time, and control partial and overall defects of silicon and a metal material at the same time, thereby reducing pollutants at the surface of the substrate and increasing a product yield.
Provided is an alkaline chemical-mechanical polishing solution comprising abrasive particles, an azole compound, one or more C1-C4 quaternary ammonium base, an oxidant, water and a pH regulator. The pH value of the polishing solution is from 8 to 12. In alkaline polishing environment, the polishing solution can fulfill the requirements of the polishing rate and the selection ratio of various materials in the course of polishing the barrier layer and can show extreme ability of remedying the surface defect of semiconductor device. The evenness of surfaces is achieved rapidly, the work efficiency is improved, and the production cost is reduced.
A chemical-mechanical polishing solution for flattening of a through silicon via (TSV) barrier layer at least comprises an abradant and a silicon nitride polishing rate inhibitor. The polishing solution has a high silicon dioxide removal rate and a low silicon nitride removal rate, can effectively flatten the TSV barrier layer without causing metallic corrosion and can linearly adjust the copper removal, and has high defect correction capability and low surface contaminant index.
Disclosed are a chemical mechanical polishing slurry for copper and application thereof. The slurry comprises an abrasive particle, a complexing agent, an oxidant, a corrosion inhibitor and at least one of phosphate type surfactant. The use of the chemical mechanical polishing slurry can keep a high copper removal rate, and improve dishing dent and over polishing window of polished copper line. The slurry can improve the following detects such as few contaminants on the surface of the polished copper and no corrosion on it.
A chemical-mechanical polishing liquid, applicable to a through-silicon-via (TSV) blocking layer, at least comprises an abrasive, a composite copper corrosion inhibitor, a complexing agent, and a silicon nitride modifier. The polishing liquid has a high silicon dioxide removal speed and a low silicon nitride removal speed, so as to implement effective planarization on the blocking layer and stop the silicon nitride layer, so as to form a through-silicon hole, and at the same time not to cause metal corrosion, thereby achieving the high defect correction capability and the low surface pollutant index.
Disclosed in the present invention is a chemical-mechanical polishing liquid. The polishing liquid contains a carrier, abrasive particles, water soluble oxysalts and water soluble polyhydroxy compounds. The chemical-mechanical polishing liquid in the present invention has a relatively high SiO2 polishing rate and a high selection ratio of SiO2/Si3N4 removing rates, at the same time, and has a relatively high Ta polishing rate, and the selection ratio of Ta/Cu removing rates being close to 1.
Disclosed is a chemical mechanical polishing solution for shallow trench isolation. The polishing fluid at least comprises an abrasive containing cerium dioxide, an organic phosphonic acid, a pH regulator, and carrier water, and has a high rate in removing high-density plasma silicon dioxide and a low rate in removing silicon nitride. The polished surface is planar and smooth, and has good stability. The present invention is applicable to chemical mechanical planarization for shallow trench isolation.
A chemical-mechanical polishing liquid comprising: polishing particles, water, an azole compound, and piperazine. The polishing liquid enables high-speed polishing of silicon, and the system has high stability and low comprehensive cost for semi-conductor processing.
Disclosed in the present invention is chemical mechanical polishing slurry, comprising water, gas phase silicon dioxide, silver ions, sulphate ions and a peroxide. The polishing slurry has a very high speed for polishing tungsten, and at the same time enhances the polishing selection ratio of tungsten and silicon dioxide.
Disclosed is a chemical mechanical planarization slurry for polishing silicon and copper, comprising abrasive particles, an oxidant, an alkaline polishing rate adjusting agent capable of reacting with the surface of silicon and copper to form a compound readily dissolvable in a carrier. The chemical mechanical planarization slurry disclosed can achieve a relatively high silicon and copper removal rate, regulate the polishing selection ratio of copper to silicon in chemical mechanical polishing, and control the local or overall corrosive effect of the metallic material, substantially free of surface defects, scratches, stains and other residual contaminants on the substrate.
Disclosed is a chemical mechanical planarization slurry containing organic acid for silicon and copper, comprises abrasive particles, an oxidant, an organic acid-type polishing rate regulating agent, and may further comprise a pH regulating agent, a surfactant, a stabilizer, a corrosion inhibitor, a sterilant and the like. The polishing rate adjusting agent can be one of or a mixture of a multiple of, an organic acid, an amino acid, an organic phosphonic acid and an organic sulfonic acid. The disclosed chemical mechanical planarization slurry can simultaneously obtain relatively high removal rates for both silicon and copper, regulate the polishing selection ratio of copper to silicon in chemical mechanical polishing, and control the local or overall corrosive effect of the metallic material, substantially free of surface defects, scratches, stains and other residual contaminants on the substrate.
Disclosed is a cleaning liquid with a low etching ability which is suitable for cleaning thick photoresists. The cleaning liquid for photoresists with a low etching ability comprises: potassium hydroxide, conventional solvent, pentaerythritol, alkylol amine and phenolic compounds, which phenolic compounds are selected from one or more of resorcinol and derivatives thereof, and phloroglucinol and derivatives thereof. The cleaning liquid for photoresists with a low etching ability can be used for removing photoresist and other residues on metals, metal alloys or dielectric materials. At the same time, the cleaning liquid has a low etching rate for metals such as copper (Cu), aluminium (Al), etc., and has a good application prospect in the field of micro-electronics such as semiconductor wafer cleaning and the like.
A chemical mechanical polishing slurry for use in copper, comprising at least a phosphate ester surfactant as well as grinding particles, a complexing agent and an oxidizing agent. Using the slurry in the present invention can decrease the static erosion rate of copper, suppress the removing rate of copper at low pressures and reduce the disc-shaped depressions after polishing.
Disclosed is a low etching stripper solution for cleaning a thick photoresist. The low etching photoresist stripper solution comprises potassium hydroxide, a solvent, an alcohol amine, and a polynary composite corrosion inhibitor system. The photoresist stripper solution is useful for removal of a photoresist or other residues on a metal, a metal alloy, or a dielectric substrate, and has a low etching rate for a metal such as copper, aluminium, tin, lead, and silver, and thus has a good application prospect in the field of microelectronics such as semiconductor chip cleaning.
A chemical mechanical polishing slurry for copper is providedin this invention, wherein 5-phenyl tetrazole is added in the baseof abrasive particles, a complexing agent and an oxidant. By using the chemical mechanical polishing slurry in this invention a high removal rate of copper can be kept, and the dishing defects after polishing can be effectively improved.
Disclosed is a chemical mechanical polishing slurry, comprising water, an abrasive, silver ions, sulfate ions, a peroxide, and a surfactant. The polishing slurry has a very high tungsten polishing rate, and significantly eliminates surface defects on a chip at the same time.
A chemical mechanical polishing method of tungsten is disclosed, comprising the following steps: (a) blending a chemical mechanical polishing slurry precursor and an active reducing agent to prepare a chemical mechanical polishing slurry; and (b) applying the chemical mechanical polishing slurry to the chemical mechanical polishing of tungsten; wherein the active reducing agent can significantly increase the activity and oxidation efficiency of oxidants. The chemical mechanical polishing slurry precursor comprises two types or more oxidants at the same time. The addition of the active reducing agent can regain the oxidation activity of inactivated oxidants and increase oxidation efficiency, thus resulting in a very high polishing speed.
Disclosed is a chemical mechanical polishing liquid for the planarization of a blocking layer, which comprises at least one kind of abrasive particle, a metal chelating agent, a silicon dioxide polishing promoter, a composite metal anticorrosive, an auxiliary cleaning constituent and an oxidant. During polishing of the blocking layer, the polishing liquid can effectively remove particle residues on the surface of wafers and metal compound residues on polishing pads, and has relatively good stability.
Disclosed is a chemical-mechanical polishing slurry for planarizing a barrier layer, at least comprising abrasive particles, a metal chelating agent, combined metal corrosion inhibitors, an organic solvent, and an oxidant. The polishing slurry has a high removal rate for a medium material and a low dielectric material, a good surface defect correction capability, and good stability, and can effectively alleviate the remaining of a metal compound on a polishing pad.
Disclosed is a chemical-mechanical planarization slurry for polishing poly-crystalline silicon and copper at high speeds, comprising abrasive particles, an oxidant, an agent for increasing polishing rate and a carrier. The disclosed chemical-mechanical planarization slurry can, by means of a polishing system, simultaneously increase the polishing rate of poly-crystalline silicon and copper metals, and at the same time control the local and general corrosion of the metal material, thus reducing contaminants on the surface of a substrate and increasing the product acceptance rate.
Disclosed is a chemical mechanical polishing solution, comprising: abrasive particles, an oxidant comprising halogen, organic amine, ethylene diamine tetraacetic acid (EDTA), and a pH regulator. The chemical mechanical polishing solution has an alkaline PH value. The polishing solution can realize a very high polishing speed with respect to both silicon and copper in an alkaline polishing environment. The polishing solution may be added with amino acid, so as to keep the removal rate of the silicon and copper stable.
A fluoride-containing cleaning liquid for use in the semiconductor industry having a low silicon oxynitride etching rate. The cleaning liquid comprises: a) 0.1 to 20 wt% of a fluoride; b) 0.01 to 20 wt% of a polyol; c) 5 to 75 wt% of water; d) 1 to 75 wt% of a solvent; and e) 0 to 20 wt% of other additives.
Disclosed is a chemo-mechanical polishing liquid comprising water, an abrasive filler, a compound capable of etching tungsten, a tungsten-etching inhibitor, and a regulator for a substrate profile, wherein the tungsten-etching inhibitor is an amide comprising a double bond. The said polishing liquid possesses a very high tungsten polishing rate and, at the same time, a very low tungsten static etch rate.
Disclosed is a chemical mechanical polishing solution, comprising water, an abrasive, a compound capable of etching tungsten, and at least a tungsten etching inhibitor. The tungsten etching inhibitor is selected from amides containing a double bond. The polishing solution has a very high tungsten polishing rate and a very low tungsten static etch rate at the same time.
A low etching photo-resist washing fluid suitable for washing a relatively thick photo-resist. The washing fluid comprises: (a) potassium hydroxide, (b) a pyrrolidone solvent, (c) a sulfone solvent, (d) pentaerythritol, (e) amine, (f) resorcinol, and (g) a benzotriazole etching inhibitor. The low etching photo-resist washing fluid can be used for the removal of photo-resist or other residues from a metal, a metal alloy, or a dielectric substrate, has a relatively lower etching speed on metals such as copper (Cu), and holds a positive application prospect in the field of microelectronics such as the washing of semiconductor chips.
Disclosed is a chemical mechanical polishing (CMP) slurry, comprising an activator, a strong oxidizer precursor, an abrasive, and water. The chemical mechanical polishing of the present invention enables a significant increase in the speed of tungsten polishing.
The present invention relates to a chemical mechanical polishing (CMP) slurry, comprising abrasive particles, an oxidizer, an amino acid, quaternary ammonium hydroxide, and water. The slurry has a basic pH. The slurry enables very high speed polishing of silicon and copper under a basic polishing condition.
A low etch cleaning solution suitable for the cleaning of thick photoresist comprises (a) potassium hydroxide, (b) pyrrolidones solvent, (c) pentaerythritol, (d) alkylol amine and (e) resorcinol. The low etch photoresist cleaning solution can be used for removing photoresist and other residue on a metal, metal alloy or dielectric substrate. At the same time, it has low etch rate for metals such as Cu. It has good application prospects in the microelectronics field for the cleaning of semiconductor wafers and the like.
A method of chemical mechanical polishing tungsten is disclosed in which a polishing solution includes an exciting agent and a strong oxidizing agent precursor. The polishing solution further includes an abrasive material, water, a pH modifier and a static etch rate inhibitor. The exciting agent is composed of nonferrous transition element metal salts and peroxides. The strong oxidizing agent precursor is transition metal compounds. The exciting agent in the polishing solution excites the strong oxidizing agent precursor, so that the polishing speed of tungsten is improved.
A chemical-mechanical polishing liquid is disclosed. The polishing liquid comprises a composite abrasive, and a pH adjustor. By increasing the pH value of the polishing liquid and applying the composite abrasive in the polishing liquid, the phenomenon that upon polishing the removal rate of edge is lower than that of central area is decreased, the possibility of damaging a chip in the edge area of wafer is effectively ameliorated, therefore solving the commonly encountered problem of edge removal rate falling fleetly during the process of polishing silica by a silica-sol-based polishing liquid, and improving the uniformity of polishing.
A chemical-mechanical polishing liquid for polishing silicon is disclosed. The polishing liquid comprises water, abrasive particles, as least one accelerant for silicon, and at least one inhibitor for silicon. By adjusting the contents of the accelerant and the inhibitor for silicon, the polishing liquid can adjust the selectivity ratio of silicon to silicon dioxide, and improve the flattening efficiency.
A chemical mechanical polishing liquid for metal can be formed by combining the following substances: abrasive particles, a complexing agent and a corrosion inhibitor. By using the polishing liquid, the removal rate of metal is reduced and the overall or partial corrosion on the metal material is prevented, therefore evidently reducing defects and improving the surface quality.
A chemical-mechanical polishing liquid is provided. The polishing liquid comprises abrasive particles, a polymer, water, as well as a stabilizer for improving the stability of the polishing slurry. In the polishing liquid，the growth rate of the particle size of the abrasive particles with time extended is low. The chemical-mechanical polishing liquid has higher stability, longer storage time and service life.
A chemical-mechanical polishing liquid is provided. The polishing liquid comprises abrasive particles, corrosion inhibitors, oxidants, water and at least two complexing agents. The chemical-mechanical polishing liquid of the present invention can keep high removal rate of copper after applying the cleaning solution of a polishing pad.
A chemical-mechanical polishing liquid for silicon-polishing is provided. The polishing liquid comprises water, abrasive particles, at least one accelerator for silicon and at least one inhibitor for silicon. By adjusting the contents of the accelerator and the inhibitor, the polishing liquid can adjust the selective ratio of silicon to silicon dioxide, and improve flattening efficiency.
A chemical-mechanical polishing liquid is disclosed, which comprises abrasive particles, an oxidant, a polyhydric compound, an organic base and water. The chemical-mechanical polishing liquid can considerably improve the removal rate of copper under basic conditions, so that the removal rates of silicon and copper can simultaneously be improved considerably under basic conditions for polishing.
A chemical-mechanical polishing liquid is provided. The polishing liquid contains water, an abrasive, an oxidant and a water-soluble cationic surfactant. The present polishing liquid can reduce and eliminate the noises from polishing, improve the operating environment, decrease the friction of a polishing pad, and prolong the service life of the polishing pad.
A chemical-mechanical polishing liquid for polishing tantalum barrier is disclosed. The polishing liquid comprises abrasive particles, an organic acid, polyacrylics, a metal corrosion inhibitor, a quaternary ammonium base, an oxidant and water. The polishing liquid can meet the requirement of the polishing stage for barrier layers, improve the removal rate of barrier layer (Ta or TaN), meet the selective ratio requirement of the polishing rate of an insulating layer material to that of a metallic material during the polishing process of the barrier layer, prevent the partial and overall corrosion occurred during the polishing process of the metallic material, and reduce surface defects and contaminants of a polished wafer.
A chemical-mechanical polishing slurry and the use thereof are provided. The polishing slurry is used for chemical-mechanical polishing of copper. The polishing slurry comprises a star polymer surfactant containing pigment-affinity groups, and also abrasive particles, a complexing agent, a corrosion inhibitor, and an oxidant. By applying the polishing slurry, the static corrosion rate of copper can be reduced, and dishing-pits of a polished copper wire can be ameliorated.
A chemical-mechanical polishing liquid and the use thereof are provided. The polishing liquid comprises a star polymer containing pigment-affinity group, abrasive particles, a complexing agent, an oxidant and water. While a relatively high removal rate of copper can be kept by applying the polishing liquid, dishing of a polished copper block can be reduced, partial and integral corrosion of the metal copper can be prevented, and the static corrosion rate of copper at room temperature and at polishing temperature can be reduced.
A low etched rinse solution for removing thick film resist and the removing method of using the same. The rinse solution includes dimethyl sulfoxide, potassium hydroxide, aromatic alcohol, alcohol amine and metal K. The rinse solution may be used in a large range of temperature (45-90℃).The rinse solution may be used in manufacturing semiconductor for removing thick resist on a metal, metal alloy or dielectric substrate, especially for removing highly crosslinked negative resist with the thickness of more than 100μm. Meanwhile the rinse solution has low etch rate for metals such as Cu, Sn and Pb without damage to the wafer pattern and the substrate. The rinse solution can be used in micro electronic field for the cleaning of semiconductor wafer.
A chemical-mechanical polishing liquid is disclosed, which contains water, abrasive, oxidant and two or more non-ferrous transition-element metal salts. The polishing liquid can remarkably improve the polishing rate to tungsten.
A fluorine-containing liquid composition is provided, which comprises carboxyl polymer, guanidine, fluoride and carrier. The composition has an inhibitory effect on the corrosion of metallic titanium.
A chemical mechanical polishing liquid comprises: abrasive particles, hypophosphorous acid (H3PO2) or salts thereof, and surfactants. The polishing liquid is a brand new Oxide CMP formulation, and has a removal rate for oxide faster than those of conventional formulations.
A chemical mechanical polishing liquid comprises silicon dioxide abrasive particles and crown ethers, and the pH of the polishing liquid is not greater than 7. The chemical mechanical polishing liquid can significantly improve the polishing rate of silicon nitride, while relatively reduce the dosages of chemical substances in the polishing liquid, so as to further reduce environmental pollution.
A cleaning solution for removing plasma etching residues from the semiconductor manufacture industry comprises: (a) at least a fluoride; (b) at least a guanidine; (c) at least a solvent; and (d) water. The said cleaning solution is used to clean metallic threads, via and the wafers of metallic pad at the same time, and reduce the rate of corrosion on metal or non-metallic materials.
The invention provides a chemical-mechanical polishing liquid. It contains star polymer with a pigment-affinity group, abrasive particles, chelant，oxidant and water. The polishing liquid can reduce the dishing of a polished copper block, and can prevent partial and integral corrosion of metal copper under the case of keeping high copper removal rate by applying the polishing liquid of the invention.
The invention discloses a chemical-mechanical polishing liquid which can remove dielectric material. The polishing liquid contains dimeric dumbbell-like and/or polymeric chain-like colloid silica abrasive particles having regular shape. The surface of polished wafer is glabrous and flat.
A fluorine contained composition which contains a fluoride compound, a polyvinyl-pyrrolidone type polymer and a carrier is disclosed. The disadvantage of high corrosion rate on the polycrystal silicon due to the conventional fluorine contained composition can be eliminated. By adding the selected polyvinyl-pyrrolidone type polymer that is applicable in a fluorine contained system, a fluorine contained composition is provided which can effectively inhibit the corrosion rate of polycrystal silicon. The applications of the fluorine contained composition in the field of semiconductor wafer cleanning, mechannical polishing and wet-etching, solar battery etc. can be further developed. The application of the composition in cleaning semiconductor wafer is also disclosed.
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
C08J 3/03 - Making solutions, dispersions, lattices or gels by other methods than by solution, emulsion or suspension polymerisation techniques in aqueous media
A detergent for removing photo resist includes quaternary ammonium hydroxide, water, alkyl glycol aryl ether in which the alkyl glycol has 3-18 carbon atoms, dimethyl sulfoxide and corrosion inhibitor. At least one corrosion inhibitor is selected from boric acid, borate and boric acid ester. The detergent for removing photo resist further includes polar organic co-solvent, surfactant and /or other corrosion inhibitor. The detergent can clean photo resist and residues on a metal, metal alloy and dielectric substrate.
A protection liquid for metal substrate of semiconductor wafer is disclosed, which comprises: a star polymer with pigment-affinic groups, and water. The star polymer is one or more polymers of star polyacrylic acids, star polyacrylic esters and star polyacrylamides. A method of using the protection liquid includes: removing residues produced by plasma-etching or plasma-etching/ashing from semiconductor wafer with cleaning liquid, then rinsing the semiconductor wafer with the protection liquid, and drying it. The protection liquid is environmental friendly and can be prepared at low cost. The method can be operated easily and can significantly reduce the corrosion rate of aluminum to less than 2A/Min.
A rinse solution composition for removing resist includes quaternary ammonium hydroxide, water, alkyl diol aryl ether, dimethyl sulfoxide and corrosion inhibitor of at least one of citric acid, citrate ester and citrate salt. The alkyl glycol of alkyl glycol aryl ether has 3-18 carbon atoms. The rinse solution composition may further include polar organic co-solvent, surfactant and/or other corrosion inhibitor. The rinse solution composition for removing resist may clean more 20μm thickness resist (especially thick film negative resist) and other etching residues on a metal, metal alloy or dielectric substrate, and has low etch rate for metals such as A1 and Cu, and nonmetals such as SiO2. And the rinse solution composition can be used in micro electronic field for the cleaning of semiconductor wafer.
