Abstract

A measurement system is provided. The measurement system includes an optical energy source configured to provide optical energy. The measurement system also includes a measurement head configured for interferometry using the optical energy provided by the optical energy source. The measurement head includes a polarizing beam splitter, and a rooftop prism in optical communication with the polarizing beam splitter, the rooftop prism being attached to the polarizing beam splitter. The measurement system also includes a retroreflector configured to be attached to a structure to be measured. The measurement system also includes a detector configured to determine displacement using optical energy provided by the measurement head.

IPC Classes  ?

• G01B 9/02055 - Reduction or prevention of errorsTestingCalibration
• G01B 9/02056 - Passive reduction of errors
• G01B 9/02061 - Reduction or prevention of effects of tilts or misalignment
• G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
• G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
• G01B 9/02018 - Multipass interferometers, e.g. double-pass

Abstract

According to an exemplary embodiment of the invention, a method of patterning a photoresist is provided. The method includes selectively illuminating an edge portion of a photoresist using an illumination system to form a patterned portion of the photoresist.

IPC Classes  ?

• G03F 7/20 - ExposureApparatus therefor

Abstract

The present disclosure concerns a photolithography apparatus (100) and method for controlling relative image size (S1/S0) of a projected substrate pattern (W). A projection system (10) is arranged for projecting an image of a mask pattern (M) as the substrate pattern (W) onto a substrate (6), wherein the projection system (10) comprises an adjustment lens (13) moveable in a range (Xmin,Xmax) encompassing a central position (X0) for controlling a relative image size (S1/S0). The projection system (10) is arranged to project the mask pattern (M) onto the adjustment lens (13) such that, when the adjustment lens (13) is positioned at the central position (X0), an apparent mask pattern (Μ') from a point of view of the adjustment lens (13) appears to be at a distance (2*F) from the adjustment lens (13) that is twice a focal length (F) of the adjustment lens (13).

IPC Classes  ?

• G03F 7/20 - ExposureApparatus therefor
• G02B 15/14 - Optical objectives with means for varying the magnification by axial movement of one or more lenses or groups of lenses relative to the image plane for continuously varying the equivalent focal length of the objective