Provided is a display device that makes a desired pattern or the like visible in the non-display state and is capable of displaying a display image without allowing perception of the complementary color of the color of the pattern or the like. The display device includes: a dot matrix display panel; and a design layer disposed in front of a front surface side of the display panel. The design layer includes a design part that includes a binder resin and light-reflective colored particles dispersed in the binder resin. The light-reflective colored particles reflect light having a specific wavelength while absorbing light having a wavelength other than the specific wavelength.
A drive circuit substrate includes a unit drive circuit including a first transistor including a first semiconductor layer having a first channel region, and a first source region and a first drain region that contain a P-type impurity, a first insulating layer that is provided on the first semiconductor layer, a first-gate-electrode-combined first facing electrode that contains an oxide semiconductor and a conductor impurity and that is provided on the first insulating layer such that the first-gate-electrode-combined first facing electrode overlaps the first channel region in plan view, a first interlayer insulating film that is provided on the first-gate-electrode-combined first facing electrode, a second facing electrode that is provided on the first interlayer insulating film such that the second facing electrode overlaps the first-gate-electrode-combined first facing electrode in plan view, a first drain electrode, a first source electrode, and a holding capacitor.
H10D 86/40 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
H10D 62/80 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
A display substrate includes a first wiring line, a first switching element connected to the first wiring line, a second switching element connected to the first wiring line, a second wiring line overlapping the first wiring line, a first electrode connected to the first switching element, a second electrode connected to the second switching element, and a third electrode overlapping the first electrode and the second electrode.
A display device includes a first substrate, a second substrate, a vacuum layer, a first seal portion, a light-blocking layer, and a first translucent layer. The first substrate has a principal surface that is divided into a display area and a non-display area. The first seal portion surrounds the vacuum layer. The light-blocking layer is provided with a first opening facing the vacuum layer and a second opening facing the vacuum layer. The second opening is placed at a spacing from the first opening. The first translucent layer is disposed not to overlap the first opening but to overlap the second opening.
A drive circuit substrate includes a unit drive circuit including a first transistor including a first semiconductor layer having a first channel region that is a polycrystalline silicon layer, a first source region, and a first drain region, a first insulating layer that is provided on the first semiconductor layer, a first-gate-electrode-combined second facing electrode that contains a conductor impurity and an oxide semiconductor and that is provided on the first insulating layer such that the first-gate-electrode-combined second facing electrode overlaps the first channel region and a portion of the first source region that is a first facing electrode in plan view, a first drain electrode that is electrically connected to the first drain region, a first source electrode that is electrically connected to the first source region, and a holding capacitor that includes the first facing electrode and the second facing electrode.
The present invention implements a scanning-signal-line drive circuit that enables high-speed driving without reducing display quality. The scanning-signal-line drive circuit comprises a shift register (401) that is operated on the basis of six gate clock signals GCK1-GCK6 forming three sets of two-phase clocks. A plurality of unit circuits (4) forming the shift register (401) form a block for every six consecutive unit circuits (4). For every block, six consecutives unit circuits (4) are each imparted with a different gate clock signal as a scan-signal-line driving clock signal in a similar manner. Using such a configuration, the shift register (401) is imparted with gate start pulses GSP such that, during each of vertical scanning periods, each of the unit circuits (4) outputs write pulses three times at, for example, intervals of eight horizontal scanning periods.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/3266 - Details of drivers for scan electrodes
7.
TOUCH SENSOR, DISPLAY DEVICE, MANUFACTURING METHOD FOR TOUCH SENSOR, AND MANUFACTURING METHOD FOR DISPLAY DEVICE
A touch sensor includes a first insulating layer, a first wiring line located above the first insulating layer, and a second insulating layer located above the first wiring line. An opening extending through the first insulating layer and the second insulating layer is formed. The first insulating layer includes a first edge corresponding to an edge of the opening. The second insulating layer includes a second edge corresponding to an edge of the opening. A film thickness of the first edge is thinner than a film thickness of a portion other than the first edge in the first insulating layer, or a film thickness of the second edge is thinner than a film thickness of a portion other than the second edge in the second insulating layer.
A first TFT (9a) is provided with a first gate electrode (16a) that, on a first semiconductor layer (14a), overlaps a first channel region (14ac) of the first semiconductor layer (14a) via a first gate insulating film (15a). A second TFT (9b) is provided with a second gate electrode (16b) that, on a second semiconductor layer (14b), overlaps a second channel region (12bc) of the second semiconductor layer (14b) via a second gate insulating film (15b). The first gate insulating film (15a) is provided larger in plan view than the second gate insulating film (15b). The channel length of the first channel region (14ac) is longer than that of the second channel region (12bc).
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
9.
LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT
This light-emitting element (101) comprises an electron transport layer (4) that is positioned between a light-emitting layer (3) and a cathode (2) and includes an n-type semiconductor. The light-emitting layer (3) has a plurality of quantum dots (5) and a medium material (6) positioned between the plurality of quantum dots (5) and including a p-type semiconductor. The work function of the medium material (6) is greater than the work function of the electron transport layer (4).
H05B 33/20 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
H05B 33/12 - Light sources with substantially two-dimensional radiating surfaces
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H05B 33/22 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
H10K 50/12 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A light-emitting layer (23) provided to a light-emitting element (2) includes a light-emitting material (30) and a matrix material (40). In a direction along the lamination direction (LD) of the light-emitting element, the ionization potential of the matrix material is smaller or the electron affinity of the matrix material is larger toward the center of the light-emitting layer in comparison to both an end (23A) of the light-emitting layer toward an anode (21) and an end (23B) of the light-emitting layer toward a cathode (25).
H05B 33/20 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
H05B 33/10 - Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H05B 33/12 - Light sources with substantially two-dimensional radiating surfaces
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H05B 33/22 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
H10K 50/12 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
The present disclosure provides a technique capable of sufficiently expressing advantages of a tandem structure in a light-emitting element of a light-emitting device. A blue light-emitting element (120B) of three color light-emitting elements (120R, 120G, 120B) of a light-emitting device (110) includes a tandem light-emitting unit, and the thickness of a second blue light-emitting layer (53B) on a cathode layer (22B) side in the unit is less than the thickness of a first blue light-emitting layer (34B) on an anode layer (21B) side.
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
H05B 33/10 - Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H05B 33/12 - Light sources with substantially two-dimensional radiating surfaces
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
H10K 50/12 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
With this invention, advantages of a tandem structure in a light-emitting element of a light-emitting device can be satisfactorily demonstrated. A blue light-emitting element (120B) among light-emitting elements (120R, 120G, 120B) of three colors in a light-emitting device (110) includes a tandem light-emitting unit, and the ratio of the thickness of a first blue light-emitting layer (34B) to the thickness of a second blue light-emitting layer (53B) in the unit is greater than 1/15 and less than 4/15.
H10K 50/12 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A light-emitting element (2) comprises a light-emitting layer (23) that is positioned between an anode (21) and a cathode (25). The light-emitting layer includes a first quantum dot (31) and an adduct (40). The first quantum dot is directly adjacent to a layer (22) that is adjacent to the anode side of the light-emitting layer, or is adjacent to said layer with an organic ligand (41) or a semiconductor interposed therebetween.
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H05B 33/12 - Light sources with substantially two-dimensional radiating surfaces
H05B 33/20 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
H05B 33/22 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A light-emitting element (2) comprises an emissive layer (23) located between an anode (21) and a cathode (25). The emissive layer includes a first quantum dot (31), a second quantum dot (32), a first adduct (40), and a second adduct (42). The first adduct is positioned between the first quantum dot and a layer (22) that the emissive layer is adjacent to on the anode side. The second adduct is positioned between the second quantum dot and a layer (24) that the emissive layer is adjacent to on the cathode side. The thickness (T1) of the first adduct is smaller than the thickness (T2) of the second adduct.
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H05B 33/12 - Light sources with substantially two-dimensional radiating surfaces
H05B 33/20 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
H05B 33/22 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
In a non-display region (N) inside a display region, a plurality of inverted taper structures (Ra, Rb, Rc, Rd, Re, Rf, and Rg) are disposed in an annular shape so as to surround a through-hole (H) penetrating a display panel in the thickness direction. Each of the inverted taper structures (Ra-Rg) includes: a column portion (C) formed in the same layer and made of the same material as inorganic insulating films (15, 20); and a lid portion (L) disposed on the column portion (C). A first inorganic sealing film (41) is disposed so as to cover each of the inverted taper structures (Ra-Rg). The lid portion (L) has a thickness of at least 0.5 μm, and at least the surface thereof is made of a material having a lower dry etching rate than the inorganic insulating films (15, 20).
The present disclosure provides technology that makes it possible for the advantages of a tandem structure in a light-emitting element of a light-emitting device to be sufficiently exhibited. A blue light-emitting element (120B) among light-emitting elements (120R, 120G, 120B) of three colors in a light-emitting device (110) includes a tandem light-emitting unit. The ratio of the thickness of a first blue light-emitting layer (34B) on the positive electrode layer (21B) side of said unit to the thickness of a second blue light-emitting layer (53B) on the negative electrode layer (22B) side of said unit is greater than 4/15 but less than 2/3.
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
H05B 33/10 - Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H05B 33/12 - Light sources with substantially two-dimensional radiating surfaces
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H10K 50/12 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
The present disclosure provides technology that makes it possible for the advantages of a tandem structure in a light-emitting element of a light-emitting device to be sufficiently exhibited. A blue light-emitting element (120B) among light-emitting elements (120R, 120G, 120B) of three colors in a light-emitting device (110) includes a tandem light-emitting unit. The ratio of the thickness of a first blue light-emitting layer (34B) of said unit to the thickness of a second blue light-emitting layer (53B) of said unit is greater than 2/3 but less than 1.
H10K 50/12 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A first wiring and a second wiring both intersect with a first inclined side portion, a third wiring has a first wiring unit made of a part of a first conductive film and a second wiring unit made of a part of a first metal film or a second conductive film, the second wiring unit is connected to the first wiring unit and the first wiring, a fourth wiring has a third wiring unit made of a part of the second metal film and a fourth wiring unit made of a part of the first metal film or the second metal film, the third wiring unit is arranged to overlap the first wiring unit, and the fourth wiring unit is arranged not to overlap the second wiring unit and is connected to the third wiring unit and the second wiring.
In the present invention, a control unit performs: a step (step S120) of updating compensation data of a first storage area on the basis of video data; a step (step S130) of calculating a difference between the compensation data of the first storage area and compensation data of a second storage area; and, when a result thereof exceeds a threshold value (Yes in step S132), a step (step S140) of overwriting, in the first storage area, the compensation data of the second storage area or compensation data of a nonvolatile memory.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/3275 - Details of drivers for data electrodes
The present disclosure achieves cost reduction and mitigation of the effects of carrier leakage between pixels. A light-emitting device (10) includes a first electrode layer (21), light-emitting layers (25) of three colors, and a second electrode layer (29) stacked in this order, with various functional layers interposed therebetween. At least a portion of the functional layers is an integral common layer formed across the light-emitting layers of the respective colors, and the difference in intermediate gradation voltages in the current density-voltage characteristics of the light-emitting layers of the respective colors is 0.1-1.1 V.
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H05B 33/22 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A light-emitting element includes a light-emitting layer, and an electrical function layer overlapping the light-emitting layer. The electrical function layer includes nanoparticles constituted by metal oxide nanoparticles and polyvinyl pyrrolidone.
H10K 71/13 - Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
B82Y 40/00 - Manufacture or treatment of nanostructures
C09D 11/037 - Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
C09D 11/106 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
A stretchable display device (1) is provided with a stretch substrate (11), a plurality of support substrates (12) each having pixels (2), a first stretch wiring (21) connecting the pixels together, a first stretch dummy wiring (31) connecting the support substrates together, and stretch measurement units (42, 43) for measuring a stretch ratio of the first stretch dummy wiring and estimating a stretch ratio of the first stretch wiring.
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
The present disclosure achieves a reduction in cost and a reduction in the effect of leakage of carriers between pixels. A light-emitting device (10) has a first electrode layer (21), light-emitting layers (25) of three colors, and a second electrode layer (29) overlapping in the stated order and has various functional layers therebetween. At least some of the functional layers are integral common layers formed across the light-emitting layers of the respective colors, and the difference in the rising voltage in the current density-voltage characteristics between the light-emitting layers of the respective colors is 0.1-1.0 V.
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H05B 33/22 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A main calculation unit generates emphasized Y luminance data by performing luminance emphasis processing on only Y luminance data included in YUV data representing an image of one frame. Further, the main calculation unit generates blurred Y luminance data by performing luminance blur processing on only the Y luminance data. In this way, it is possible to perform processing for improving the display quality of a moving picture in a shorter time period.
G09G 3/3208 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
25.
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
A method for manufacturing a semiconductor device including an oxide semiconductor layer, a gate insulating film, and a gate electrode layered in this order on a substrate, includes: forming the oxide semiconductor layer on the substrate; forming the gate insulating film on the oxide semiconductor layer; forming the gate electrode on the gate insulating film; and implanting an impurity corresponding to an oxygen-defect-inducing factor from above the gate insulating film. In the implanting, the impurity is implanted so that a peak of concentration of the impurity is located in the gate insulating film and the impurity corresponding to the oxygen-defect-inducing factor is implanted from above the gate insulating film after the gate electrode is formed on the gate insulating film and a photoresist is formed covering the gate electrode.
The present invention achieves partial driving without causing display failure in a display device provided with a pixel circuit having a configuration in which an N-type transistor and a P-type transistor are mixed. A first scanning signal line connected to the control terminal of an initialization transistor within a pixel circuit 15 and a second scanning signal line connected to the control terminal of a threshold value compensation transistor within the pixel circuit 15 are driven by mutually different shift registers. A scanning-signal-line-driving circuit drives the first scanning signal line and the second scanning signal line so that the initialization transistor and the threshold value compensation transistor are kept in an OFF state in a pixel circuit included in a row set in a data maintenance row.
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/3266 - Details of drivers for scan electrodes
G09G 3/3275 - Details of drivers for data electrodes
27.
DISPLAY DEVICE AND CONTROL METHOD FOR DISPLAY DEVICE
A display device (100) comprises: a display unit (10) having a plurality of sub-pixels (Pi) each including a light-emitting element; and a control unit (20) for controlling the display unit, the control unit shifting the display position of an image frame in the display unit with the passage of time. The control unit sets the display position according to gradation data of the image frame and stress data corresponding to a sub-pixel group in a predetermined region of the display unit.
G09G 3/3208 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
28.
LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT
A light-emitting element (2) comprises an anode (21), a hole injection layer (22), a light-emitting layer (24), an electron transport layer (25), and a cathode (26) in the stated order. The electron transport layer contains first metal atoms. The hole injection layer contains the first metal atoms and a chelating agent.
A display device (1) comprises: an island-shaped lower pixel electrode (3) configured from a central portion (3c) and a peripheral portion (3pc); an island-shaped upper pixel electrode (9) overlapping the central portion (3c) of the lower pixel electrode (3) in plan view and not overlapping the peripheral portion (3pc) of the lower pixel electrode (3) in plan view; a functional layer (8G) including a green light-emitting layer (6G) provided, between the lower pixel electrode (3) and the upper pixel electrode (9), in a size larger than the upper pixel electrode (9) in plan view; an insulating layer (10) having an opening (10k); and a common electrode (11) electrically connected a plurality of upper pixel electrodes (9) via a plurality of openings (10k). The average film thickness of a first portion (8G1) of the functional layer (8G) is different from the average film thickness of a second portion (8G2) of the functional layer (8G).
H10K 50/822 - Cathodes characterised by their shape
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
H10K 50/824 - Cathodes combined with auxiliary electrodes
H10K 59/122 - Pixel-defining structures or layers, e.g. banks
H10K 102/10 - Transparent electrodes, e.g. using graphene
30.
PIXEL CIRCUIT, DISPLAY DEVICE, AND METHOD OF DRIVING PIXEL CIRCUIT
Provided is a pixel circuit for an organic EL display device, wherein a drive transistor is configured so that: a drain terminal is connected to a high voltage-side power source line via a power source supply transistor; a source terminal is connected to an anode of an organic EL element via a light emission control transistor; and a gate terminal is connected to a reference voltage line via a first voltage setting transistor. A retention capacitor is configured so that a first terminal is connected to the gate terminal, and a second terminal is connected to the source terminal. A coupling capacitor is configured so that a first terminal is connected to the source terminal, and a second terminal is connected to the reference voltage line via a second voltage setting transistor and is also connected to a data signal line via a write control transistor. The organic EL terminal is configured so that an anode is connected to an initialization voltage line via a transistor, and a cathode connected to a low voltage-side power source line.
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
31.
LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT
A light-emitting layer includes a quantum dot and a first ligand to be coordinated to the quantum dot, an electron transport layer is in contact with the light-emitting layer and includes a second ligand, and the first ligand and the second ligand have the same functional group, are each a halide ion, or are each a chalcogenide ion, the light-emitting layer includes a first metal element having an ionization tendency equal to or higher than an ionization tendency of lead, the first contact layer includes a second metal element having an ionization tendency equal to or higher than the ionization tendency of lead, the first metal element is selected from a group including alkali metals and alkaline earth metals, and the second metal element is selected from the group including alkali metals and alkaline earth metals.
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE, METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE, ACTIVE MATRIX SUBSTRATE, AND LIQUID CRYSTAL DISPLAY DEVICE
A method for manufacturing an active matrix substrate includes (A) forming a plurality of TFTs on a substrate, (B) forming an interlayer insulating layer covering the plurality of TFTs, (C) forming a plurality of touch wiring lines on the interlayer insulating layer, (D) forming a first dielectric layer covering the plurality of touch wiring lines, (E) forming a common electrode on the first dielectric layer, (F) forming a second dielectric layer covering the common electrode, and (G) forming a plurality of pixel electrodes on the second dielectric layer. The interlayer insulating layer includes an organic insulating layer, and the forming an interlayer insulating layer (B) includes (B1) forming the organic insulating layer including a plurality of openings and a plurality of bump portions protruding upward by using a multi-tone photomask.
H10D 86/60 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
H10D 86/40 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
A display device includes: a red light-emitting layer configured to emit red light, a green light-emitting layer configured to emit green light, a first blue light-emitting layer configured to emit first blue light, and a second blue light-emitting layer configured to emit second blue light, the red light-emitting layer, the green light-emitting layer, the first blue light-emitting layer, and the second blue light-emitting layer being individually provided in a cross-sectional view of the display device; and a yellow-wavelength conversion layer provided over at least the second blue light-emitting layer, and configured to convert the second blue light into yellow light.
111) on the inkjet head (51) side of the nozzle row (2L) of the inkjet head (52) is equal to an interval between the nozzles (1N, 2N) in each of the nozzle rows (1L, 2L). The inkjet heads perform simultaneous scanning to manufacture a hole injection layer 23 containing nanoparticles.
H10K 71/13 - Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
B41J 2/155 - Arrangement thereof for line printing
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
H05B 33/10 - Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
H10K 59/122 - Pixel-defining structures or layers, e.g. banks
35.
INTEGRATED CIRCUIT ELEMENT, DISPLAY DEVICE, AND ELECTRONIC APPARATUS
An integrated circuit element (10) according to the present disclosure comprises: a first port (P1) and a second port (P2), each of which extracts a first voltage (V1) generated by a constant-voltage source (CVS); a first current-limiting circuit (L1) for limiting the current from the first port (P1) so as to be equal to or less than a first threshold value; and a second current-limiting circuit (L2) for limiting the current from the second port (P2) so as to be equal to or less than a second threshold value.
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
An array substrate includes gate lines extending in a first direction and being portions of a gate metal film, source lines extending in a second direction and being portions of a source metal film, and first and second TFTs arranged alternately in the first direction. The first TFTs include first semiconductor portions that are portions of a first semiconductor film, first gate electrodes that are portions of the gate metal film, and first source electrodes and first drain electrodes that are portions of the source metal film. The second TFTs include second semiconductor portions that are portions of a second semiconductor film above the first semiconductor film via an insulating film, second gate electrodes that are portions of the gate metal film, and second source electrodes and second drain electrodes that are portions of the source metal film. The first and second semiconductor portions are alternately arranged.
H10D 86/40 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
A display substrate includes: a first wiring line located in a display region where an image is displayed; a second wiring line located in a non-display region where the image is not displayed; a first circuit unit located in the non-display region and including a first output section connected to the first wiring line and a first input section connected to the second wiring line; and a second circuit unit located in the non-display region and connected to the second wiring line but not connected to the first wiring line, wherein the second circuit unit is located adjacent to the first circuit unit along the second wiring line in the non-display region.
H10D 86/40 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
G09G 3/00 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
H10D 86/60 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
A first capacitor has: a first electrode connected to a gate terminal of a drive transistor and to a write control transistor; and a second electrode connected to a constant potential wire, such that a data signal is sequentially written to the first capacitor. A second capacitor having: a first electrode connected to a gate terminal of the drive transistor, and to the first electrode of the first capacitor; and a second electrode connected to a control line. The control line is supplied with a pulse signal.
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
39.
LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND QUANTUM DOT DISPERSION
A red light-emitting element (5R) comprises: a lower electrode (22); an upper electrode (25); and a red light-emitting layer (24 REM) provided between the lower electrode (22) and the upper electrode (25) and including a silicon oxide containing at least one among a hydroxy group and an alkoxy group and a plurality of quantum dots (QD), wherein ((amount of hydroxy group + amount of alkoxy group)/(amount of Si element)) × 100 [%] in the red light-emitting layer (24 REM) is 1 [%] to 200 [%].
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H05B 33/10 - Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H05B 33/20 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
H05B 33/22 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
H10K 71/12 - Deposition of organic active material using liquid deposition, e.g. spin coating
H10K 85/40 - Organosilicon compounds, e.g. TIPS pentacene
40.
LIGHT-EMITTING ELEMENT, LIGHT-EMITTING APPARATUS, AND DISPLAY APPARATUS
H10K 59/122 - Pixel-defining structures or layers, e.g. banks
H10K 50/125 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
In a thin film transistor layer, a first semiconductor film made of an oxide semiconductor, a first gate insulating film made of an inorganic insulating film, a first metal film, a first interlayer insulating film made of an inorganic insulating film, a second metal film, a protective insulating film made of an inorganic insulating film, and a flattening film made of an organic resin material are sequentially layered. The protective insulating film includes a thin film portion provided at a portion where a plurality of first wiring lines formed of the first metal film and a plurality of second wiring lines formed of the second metal film intersect with each other so as to be thinner than a portion of the protective insulating film around the intersecting portion.
H10K 59/131 - Interconnections, e.g. wiring lines or terminals
H10D 86/40 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
H10D 86/60 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
A light-emitting element includes an anode electrode, a cathode electrode, an EML provided therebetween, and an HIL provided between the anode electrode and the EML, the HIL including a NiO-NP and a PVP.
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A display device includes a display unit having flexibility and including a first film, a first display panel, a second film, a second display panel, and a heat dissipation part. The first film and the second film are bonded together around the first display panel and the second display panel.
A display device includes: a resin substrate; and a TFT layer provided on the resin substrate, and including a plurality of TFTs arranged for each of subpixels forming a display region. Each of the TFTs has a semiconductor layer formed of a polysilicon film. The plurality of TFTs are electrically connected to one another through a conductor region of the semiconductor layer. The TFT layer includes a light-shielding film provided to the semiconductor layer toward the resin substrate. The light-shielding film has a peripheral end disposed outside a peripheral end of the semiconductor layer.
H10K 59/121 - Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
H10D 86/40 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
H10D 86/60 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
H10K 59/126 - Shielding, e.g. light-blocking means over the TFTs
45.
VAPOR DEPOSITION DEVICE AND METHOD FOR PRODUCING DISPLAY DEVICE
A vapor deposition device includes a crucible configured to accommodate a vapor deposition material and a heat source configured to heat the vapor deposition material. An inclined portion is provided at a short-side sidewall portion, which is specific portion inside the crucible where heat from the heat source is not transferred as much compared to other portions inside the crucible, the inclined portion being configured to roll particles of the vapor deposition material M down and in a direction away from the specific portion.
A display device includes a display region including a first region including at least a part of a central portion of the display region and a second region including at least a part of end portions of the display region, a first light-emitting element provided in the first region, and a second light-emitting element provided in the second region, in which each of the first light-emitting element and the second light-emitting element includes a first electrode and a second electrode, and a nanoparticle layer positioned between the first electrode and the second electrode, the nanoparticle layer containing nanoparticles, and a concentration of halogen atoms contained in a first layer which is the nanoparticle layer of the first light-emitting element is higher than a concentration of halogen atoms contained in a second layer which is the nanoparticle layer of the second light-emitting element.
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
The present invention comprises: a first bank (1) in which an opening (8) is formed; a first electrode (2) that overlaps the opening (8) in plan view; a first functional layer (3) that is formed above the first bank (1) and the first electrode (2) and has a flat upper surface; a first light-emitting layer (4) that is formed above the first functional layer (3); a second bank (5) that is formed above the first light-emitting layer (4) and overlaps the first bank (1) in plan view; and a second electrode (7) that is formed above the second bank (5).
H05B 33/22 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
H05B 33/10 - Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H05B 33/12 - Light sources with substantially two-dimensional radiating surfaces
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H05B 33/20 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
H10K 50/11 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
H10K 50/824 - Cathodes combined with auxiliary electrodes
H10K 59/122 - Pixel-defining structures or layers, e.g. banks
H10K 71/00 - Manufacture or treatment specially adapted for the organic devices covered by this subclass
An array substrate includes a gate line, a source line crossing the gate line, a switching component disposed on a crossing portion of the gate line and the source line, a semiconductor film included in the switching component, a first insulating film disposed between a layer including the gate line and a layer including the semiconductor film, and a second insulating film disposed between a layer including the semiconductor film and a layer including the source line. The source line overlaps the gate line via the first insulating film and the second insulating film.
G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
Provided is a reflective liquid crystal display device that can exhibit increased light use efficiency. The reflective liquid crystal display device includes a reflective liquid crystal panel and an optical element disposed on or above an observer side of the reflective liquid crystal panel and including a polarizer and a Pancharatnam-Berry phase diffraction grating. For example, the optical element may include, in order from its reflective liquid crystal panel side toward its observer side, the polarizer, a λ/4 plate, and the Pancharatnam-Berry phase diffraction grating. The Pancharatnam-Berry phase diffraction grating may include a phase difference layer that introduces a phase difference Δnd satisfying the following Formula 1 or Formula 2 to wavelengths λ of 450 nm, 550 nm, and 650 nm.
Provided is a reflective liquid crystal display device that can exhibit increased light use efficiency. The reflective liquid crystal display device includes a reflective liquid crystal panel and an optical element disposed on or above an observer side of the reflective liquid crystal panel and including a polarizer and a Pancharatnam-Berry phase diffraction grating. For example, the optical element may include, in order from its reflective liquid crystal panel side toward its observer side, the polarizer, a λ/4 plate, and the Pancharatnam-Berry phase diffraction grating. The Pancharatnam-Berry phase diffraction grating may include a phase difference layer that introduces a phase difference Δnd satisfying the following Formula 1 or Formula 2 to wavelengths λ of 450 nm, 550 nm, and 650 nm.
sin
4
(
Δ
nd
π
λ
)
>
1
4
π
(
Formula
1
)
sin
2
(
Δ
nd
π
λ
)
cos
2
(
Δ
nd
π
λ
)
>
1
4
π
(
Formula
2
)
A red light-emitting element (5R) comprises a lower electrode (22), an upper electrode (25), and a red light-emitting layer (24REM) that is provided between the lower electrode (22) and the upper electrode (25), wherein the red light-emitting layer (24REM) includes quantum dots (QD), a matrix (MR), and a matrix stabilizer (8) that includes a molecular structure bonded to an element for which there is a first shielding group (7a) including a first cyclic compound and a second shielding group (7b) including a second cyclic compound.
H05B 33/20 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
Provided is a liquid crystal panel with spacers tending not to peel off and with a high pixel aperture ratio. The liquid crystal panel includes a color filter substrate including a color filter layer and multiple spacers protruding toward a liquid crystal layer. The color filter layer includes at least a first-color filter and a second-color filter adjacent to the first-color filter in the row direction. The first-color filter includes a first continuous pattern portion disposed continuously to overlap a first subpixel group arranged in the column direction, and a first protrusion pattern portion protruding in the row direction from the first continuous pattern portion. The second-color filter includes a second continuous pattern portion disposed continuously to overlap a second subpixel group arranged in the column direction. The spacers each include a color filter stack including the first protrusion pattern portion and a part of the second continuous pattern portion.
A display device includes a first liquid crystal panel and a second liquid crystal panel provided to oppose the first liquid crystal panel. The first liquid crystal panel includes a plurality of pixel electrodes disposed in a matrix shape along a first direction and a second direction intersecting with the first direction in a plan view, and a black matrix extended in the first direction and the second direction and provided with a plurality of openings that overlap the plurality of pixel electrodes. The second liquid crystal panel sequentially includes a first substrate, a spacer overlapping a display region in the plan view, an alignment film having been subjected to alignment treatment in a third direction different from the first and second directions in the plan view, a liquid crystal layer, and a second substrate. The spacer overlaps the black matrix in the plan view.
G02F 1/1347 - Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells
A display device (50a) comprises: a lower wiring layer (LW); an interlayer insulating film (IL) that covers the lower wiring layer (LW); an upper wiring layer (UW); a planarization film (TH) that covers the upper wiring layer (UW); frame wiring (18h) that is in the same layer as the upper wiring layer (UW) and that is formed from the same material as the upper wiring layer (UW); and a frame-shaped slit (S) that is formed in the planarization film (TH) of a frame region (F). In the region where the slit (S) is formed, there is provided a connection wiring (16a) that is formed in the same layer as the lower wiring layer (LW) and that is formed from the same material as the lower wiring layer (LW). The frame wiring (18h) that is provided closer to a display region (D) side than the slit (S) is connected to the connection wiring (16a) via a contact hole (H17a) that is formed in the interlayer insulating film (IL).
H10K 59/131 - Interconnections, e.g. wiring lines or terminals
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A tactile sensation presenting element includes: a vibrator layer; and a first electrode layer and a second electrode layer located so as to oppose each other with the vibrator layer interposed therebetween. At least one of the first electrode layer and the second electrode layer includes a plurality of electrodes that are electrically independent of one another. The vibrator layer includes a plurality of unit regions, in each of which occurrence of vibration can be independently controlled. The tactile sensation presenting element further includes a plurality of protrusions located opposite to the vibrator layer relative to the first electrode layer.
B06B 1/06 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
G08B 6/00 - Tactile signalling systems, e.g. personal calling systems
55.
ARRAY SUBSTRATE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING ARRAY SUBSTRATE
There is provided an array substrate including a first electrode constituted by a first conductive film, a first insulating film disposed on a lower layer side of the first conductive film, a first conductivity-induced portion formed by making a portion of a semiconductor film disposed on a lower layer side of the first insulating film conductive, the portion not overlapping the first electrode, a second conductivity-induced portion formed by making a portion of the semiconductor film other than the first conductivity-induced portion conductive, the portion not overlapping the first electrode, a first semiconductor portion constituted by a portion of the semiconductor film overlapping the first electrode, and an intervening portion constituted by a portion of the first conductive film other than the first electrode or a part of the first insulating film, the intervening portion being disposed between the first conductivity-induced portion and the second conductivity-induced portion.
H10D 86/40 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
H10D 86/60 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
A display device includes: an oxide semiconductor film; an interlayer insulating film in contact with the oxide semiconductor film; and a pixel circuit board including an effective circuit region group configured to contribute to a display, wherein the pixel circuit board has a first effective circuit region located on an outermost periphery of the effective circuit region group and including the oxide semiconductor film, the first effective circuit region has a contact hole extending through the interlayer insulating film, and a through hole extending through the interlayer insulating film is provided adjacent to the first effective circuit region outside the effective circuit region group.
H10D 86/40 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
H10D 86/60 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
An organic EL display device includes a polarizing plate stacked on a display panel. The display panel has a picture-frame region provided around the display region. A folding portion provided in the picture-frame region is folded about a folding axis extending in a first direction. The picture-frame region is provided with a touch panel line extending to cross the folding portion in a second direction perpendicular to the first direction. The polarizing plate is attached through a first adhesive layer to the display region. The folding portion is provided not with the polarizing plate but with the first adhesive layer to cover the touch panel line.
A display device (101) comprises a slit (6) that is positioned between a first terminal (4) and a second terminal (5) in a plan view and that includes a first portion (10) which penetrates a display panel (1).
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
59.
LAYERED ARTICLE INCLUDING SYNTHETIC POLYMER FILM HAVING ANTIMICROBIAL AND/OR ANTIVIRAL PROPERTIES, AND METHOD FOR PRODUCING THE SAME
A method for producing a layered article including a synthetic polymer film having antimicrobial and/or antiviral properties includes: preparing a layered article including a substrate and a synthetic polymer film formed on the substrate, wherein the synthetic polymer film has, on a surface thereof, a plurality of protrusions having area equivalent circle diameters in a range of more than 20 nm to less than 500 nm when the surface is viewed in a direction normal to the synthetic polymer film; and irradiating the plurality of protrusions in the layered article with light emitted from a xenon lamp such that the amount of irradiation with light in a wavelength range of 300 nm or more to 400 nm or less is 6 MJ/m2 or more.
B32B 3/30 - Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layerLayered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form characterised by a layer with cavities or internal voids characterised by a layer formed with recesses or projections, e.g. grooved, ribbed
B32B 27/08 - Layered products essentially comprising synthetic resin as the main or only constituent of a layer next to another layer of a specific substance of synthetic resin of a different kind
B32B 37/24 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
B32B 38/00 - Ancillary operations in connection with laminating processes
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A light-emitting element (10) according to the present disclosure comprises: an anode (E1) and a cathode (E2); and a light-emitting layer (EL) that is located between the anode (E1) and the cathode (E2). The light-emitting layer (EL) includes: first quantum dots (Q1) and second quantum dots (Q2); and a matrix material (MX) that is located between the first quantum dots (Q1) and the second quantum dots (Q2). The matrix material (MX) is a p-type conductive metal oxide.
H05B 33/20 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A method of producing a photoelectric conversion component includes forming a porous semiconductor layer on a first substrate, disposing dye solution including a dye with printing on the first substrate or a second substrate, s and bonding the first substrate and the second substrate.
A light emitting element (2) is provided with a light emitting layer (23) disposed between a first electrode (21) and a second electrode (25). The light emitting layer includes a quantum dot structure (40) which includes quantum dots (30) and an adduct (31) positioned around the quantum dots. In a cross-section of the light emitting layer, the concentration of halogen atoms in a region which includes a second straight line is 1 atm% or more, the second straight line being parallel to a first straight line and having a distance equal to or more than a half of an average particle diameter of the quantum dots from the first straight line, the first straight line passing through a plurality of quantum dots in the light emitting layer. Alternatively, the light emitting layer includes a first light emitting layer (23A) and a second light emitting layer (23B) which include a plurality of quantum dot structures, and in a cross-section of the light emitting layer, the concentration of halogen atoms in a region which includes a fifth straight line is 1 atm% or more, the fifth straight line equally dividing the space between a third straight line and a fourth straight line, the third straight line passing through a plurality of quantum dots in the first light emitting layer, and the fourth straight line being parallel to the third straight line and passing through a plurality of quantum dots in the second light emitting layer. Alternatively, the concentration of halogen atoms in the light emitting layer is 2 atm% or more.
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
An active matrix substrate includes a plurality of source lines and a plurality of touch detection lines. Each of the plurality of touch detection lines includes a first portion and a second portion. The first portion extends along any one of the source lines in such a position as to overlap the source line. The second portion is placed in such a position as not to overlap the plurality of source lines. The second portions of adjacent touch detection lines are alternately arrayed side by side in a direction extending along the source line.
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A pixel electrode of a liquid crystal display device includes at least one unit pixel electrode on which a liquid crystal domain is formed, and each pixel includes a unit pixel corresponding to the unit pixel electrode. The unit pixel includes a reflective region and a transmissive region smaller than the reflective region. An outer edge of the unit pixel electrode includes a first and a second electrode sides. The liquid crystal layer is a negative type, and a distance from the second electrode side to the transmissive region is smaller than a distance from the first electrode side to the transmissive region, or the liquid crystal layer is a positive type, and a distance from the first electrode side to the transmissive region is smaller than a distance from the second electrode side to the transmissive region.
A lighting device comprises a light source; and a reflector disposed so as to surround the light source around an axis extending in a first direction, and configured to reflect outgoing light of the light source toward the first direction, wherein the light source includes a first light source element, and a second light source element, and the first and second light source elements are arranged in the first direction in a stated order.
Provided is a display device that can exhibit, with a simple structure and a simple control mechanism, improved display quality as both a non-luminous type display device and a self-luminous type display device. The display device includes a display unit, and a light control unit disposed adjacent to a light emitting surface side of the display unit, the light control unit exhibiting a higher visible light transmittance as an intensity of visible light incident from the display unit increases.
G02F 1/133 - Constructional arrangementsOperation of liquid crystal cellsCircuit arrangements
G02F 1/00 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics
G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
A display device includes a switching component, a first electrode connected to the switching component, a first line connected to the switching component and included in a lower layer than the first electrode, a second electrode included in an upper layer than the first line and including a reflection layer that reflects light and has an uneven surface, a third electrode included in a layer lower than the first electrode and upper than the first line and disposed to overlap at least the first electrode and the first line and having a common potential, a first insulating film disposed between the first electrode and the third electrode, and a second insulating film included in a layer upper than the first line and lower than the third electrode and having a thickness greater than a thickness of the first insulating film.
G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A touch panel display device includes: a first substrate having a switching element and a pixel electrode; a second substrate having a conductive layer; a display layer sandwiched between the first substrate and the second substrate; and a switch wire switchable between: a first state in which the conductive layer functions as a sensor electrode that detects variations in capacitance because of a touch input; and a second state in which the conductive layer functions as a counter electrode that generates a display drive voltage between the conductive layer and a pixel electrode.
A light-emitting element includes an anode and a cathode, a light-emitting layer positioned between the anode and the cathode, and a charge function layer positioned between the anode and the light-emitting layer and including a nanoparticle including a metal atom, in which the charge function layer includes an organic molecule including a first functional group capable of bonding to the nanoparticle, a second functional group having a hole transport property, and a hydrocarbon group having 1 to 4 carbon atoms.
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A light-emitting device includes a substrate, at least one light-emitting element provided on the substrate, a cover member that covers the at least one light-emitting element, and an adhesive layer that is provided between the substrate and the cover member, surrounds the light-emitting element, and bonds a peripheral portion of the cover member to the substrate. The adhesive layer contains a curable adhesive, a spacer, and an oxygen adsorbent.
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
72.
LIGHT-EMITTING ELEMENT, PRODUCTION METHOD THEREFOR, AND DISPLAY DEVICE
This invention achieves control of a wavelength of light emitted from a light-emitting element with a simple configuration between electrode layers in the light-emitting element. This light-emitting element (1) is configured such that a first electrode layer (11), a light-emitting function layer (10), and a second electrode layer (14) are laid on one another in this order. The light-emitting function layer (10) contains a refractive index change material and expresses a specific refractive index determined according to an optical path length of light emitted from the light-emitting function layer (10) in the light-emitting element (1) and the wavelength of light emitted from the light-emitting element (1).
H10K 50/852 - Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H05B 33/22 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A light-emitting element (2) comprises a light-emitting layer (23) positioned between an anode (21) and a cathode (25). The light-emitting layer contains quantum dots (30) and an adduct (40) containing a metal oxide. In a cross-section parallel to the film thickness direction (DT) of the light-emitting layer, the ratio of the cross-sectional area of one quantum dot to the minimum value of the area of a square that contains therein the entirety of the cross-section of that quantum dot is referred to as the first ratio of that quantum dot. In said cross-section, the ratio of the cross-sectional area of one quantum dot to the minimum value of the area of an equilateral triangle that contains therein the entirety of the cross-section of that quantum dot is referred to as the second ratio of that quantum dot. Of quantum dots in said cross-section, the total of the proportion of first quantum dots (31) for which the first ratio is not less than 0.83 and the proportion of second quantum dots for which the second ratio is not less than 0.73 is not less than 50%.
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
An in-cell touch panel includes a first scanning line driving circuit that supplies a display driving signal to a first scanning line group among multiple scanning lines; a second scanning line driving circuit that supplies a display driving signal to a second scanning line group among the scanning lines; a touch detection circuit that detects a touch by a pointer by acquiring a detection signal from at least a subset among multiple touch detection electrodes; and a control circuit. The control circuit performs a first scanning operation to supply the display driving signal to the first scanning line group, a touch detection operation after the first scanning operation to detect the touch with the touch detection circuit, a second scanning operation to supply the display driving signal to the second scanning line group, and the touch detection operation after the second scanning operation.
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
A lighting device includes a first light emitting element, a second light emitting element, and a driving circuit driving the first light emitting element and the second light emitting element. The driving circuit includes a current supply supplying currents to the first light emitting element and the second light emitting element, a first current controller controlling a magnitude of a first current supplied from the current supply to the first light emitting element, and a second current controller controlling a magnitude of a second current supplied from the current supply to the second light emitting element.
A bend section (B) is provided with a resin filling film (8) so as to fill a first slit (Sa) formed in an inorganic insulating film of a TFT layer. A plurality of routing wires (18j) are provided on the resin filling film (8). A protective resin film (19d) is provided so as to cover the routing wires (18j). First, second, and third inorganic interlayer films (51a, 53a, 55a) of a touch panel layer are provided with a second slit (Sb) such that the surface of the protective resin film (19d) is exposed at the bend section (B). In the second slit (Sb), an end surface of the first inorganic interlayer film (51a) protrudes beyond an end surface of the second inorganic interlayer film (53a).
A display device includes a display panel including a liquid crystal panel and a backlight disposed behind the liquid crystal panel, and a controller configured to control luminance of the backlight. The controller is configured to increase or decrease the luminance of the backlight at a time of switching a refresh rate when an image is displayed on the display panel in accordance with an image signal in such a manner that a change in luminance of the display panel before and after the switching with respect to an image signal having the same gray scale falls within a predetermined range.
G09G 3/34 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
78.
LIQUID CRYSTAL DISPLAY DEVICE AND DRIVING METHOD FOR THE SAME
A common electrode driver includes an operational amplifier, a resistor, one end of which is connected to an inverting input terminal of the operational amplifier and the other end of which is connected to an output terminal of the operational amplifier, and an adjustment circuit that is configured to be able to adjust an internal combined resistance value in accordance with an applied polarity inversion driving method. The combined resistance value obtained when a one-column inversion driving method is applied is caused to be smaller than the combined resistance value obtained when a two-column inversion driving method is applied.
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
79.
LIGHT-EMITTING ELEMENT, METHOD AND APPARATUS FOR PRODUCING LIGHT-EMITTING ELEMENT, AND DISPLAY DEVICE
A light-emitting element is provided with the following: a first electrode and a second electrode; and a quantum dot layer disposed between the first electrode and the second electrode, and including first quantum dots. The quantum dot layer includes a space absent from the first quantum dots penetrating the quantum dot layer in a thickness direction of the quantum dot layer. The space contains second quantum dots having a smaller particle diameter than the first quantum dots.
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
H10K 71/15 - Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
H10K 101/30 - Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
80.
LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING DISPLAY DEVICE
A red light-emitting element (5R) includes: a first electrode (22); a second electrode (25), which is a higher layer than the first electrode (22); a red light-emitting layer (24REM) provided between the first electrode (22) and the second electrode (25); an electron transport layer (24ET) which contains metal oxide particles and which is provided between the red light-emitting layer (24REM) and the second electrode (25); and a modified protective layer (24MP) provided between the red light-emitting layer (24REM) and the electron transport layer (24ET) so as to be in contact with each of the red light-emitting layer (24REM) and the electron transport layer (24ET), wherein the modified protective layer (24MP) contains a cationic polymerization curing resin including one or more bonds from among amino, ester, and ether bonds.
An array substrate includes a first TFT that includes a first insulation film, a first semiconductor film in a layer upper than the first insulation film, a second insulation film in a layer upper than the first semiconductor film, a first gate electrode in a layer upper than the second insulation film and overlapping the first semiconductor film, a third insulation film in a layer upper than the first gate electrode, a first source electrode and a first drain electrode that are portions of a metal film in a layer upper than the third insulation film and connected to the first semiconductor film via first contact holes in the third insulation film, and an auxiliary film made of non-metal material and in a layer upper or lower than the first semiconductor film to overlap at least lower surfaces of the first source electrode and the first drain electrode.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
82.
LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT
A light-emitting element includes a first electrode, a second electrode, and a light-emitting layer located between the first electrode and the second electrode, in which the light-emitting layer includes a first nanoparticle group including a first nanoparticle and spreading in a layer shape, a first quantum dots located between the first electrode and the first nanoparticle group and a second quantum dots located between the second electrode and the first nanoparticle group.
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
H10K 101/00 - Properties of the organic materials covered by group
A foldable display (1) according to the present invention includes a flexible display portion (30), a flexible functional layer (13), and a flexible support layer (12). The flexible functional layer (13) includes a flexible cover (9) and a touch panel (39a). The flexible support layer (12) includes a first support plate (31), a second support plate (32), a first adhesive layer (33) and a second adhesive layer (34). The storage elastic modulus of the second adhesive layer (34) is 3.5 × 10 4Pa or more and 4.5 × 10 4 Pa or less. The storage elastic modulus of the first adhesive layer (33) is greater than the storage elastic modulus of the second adhesive layer (34).
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
An anti-fog sheet structure includes: a substrate made of polycarbonate, a first synthetic polymer film formed on a first main surface side of the substrate, and a second synthetic polymer film formed on a second main surface side, wherein the first synthetic polymer film has, on its surface, a plurality of first bumps having an equivalent circular area diameter Dp1 in the range of more than 50 nm and less than 500 nm, the second synthetic polymer film has, on its surface, a plurality of second bumps having an equivalent circular area diameter Dp2 in the range of more than 20 nm and less than 500 nm, and the first synthetic polymer film is formed from a cured product of a photocurable resin containing 30 mass % or more of ethoxylated pentaerythritol tetraacrylate.
A42B 3/04 - Parts, details or accessories of helmets
C09D 4/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
C09D 133/14 - Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
C09D 135/02 - Homopolymers or copolymers of esters
A display device includes: a display panel including a HIGH power supply line and a LOW power supply line; and a scan signal line drive circuit including a unit circuit, wherein the unit circuit includes: a SET terminal; a RESET terminal; an output terminal; a first thin film transistor; a second thin film transistor including a second semiconductor layer, a second gate electrode, a second source electrode, and a second drain electrode, the second gate electrode being electrically connected to the SET terminal, one of the second source electrode and the second drain electrode being electrically connected to an internal node; and a third thin film transistor, the second gate electrode is an upper gate electrode, another one of the second source electrode and the second drain electrode is electrically connected to the HIGH power supply line, and the second thin film transistor further includes a lower gate electrode.
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
86.
DISPLAY DEVICE PRODUCTION METHOD AND DISPLAY DEVICE
A display device includes a first light-emitting layer formed continuously over a plurality of first pixels, and a second light-emitting layer formed continuously over a plurality of second pixels and not overlapping the first light-emitting layer in a plan view. The second light-emitting layer includes a solution drop material, and the first light-emitting layer is formed overlapping a part of an outer peripheral portion of each pixel in a plan view.
A display device includes a plurality of subpixels that include pixel circuits respectively including light-emitting elements, a display region that includes the plurality of subpixels, a frame region that is provided outside the display region, first power supply voltage wiring lines for supplying a high potential side power supply to the pixel circuits, second power supply voltage wiring lines for supplying a low potential side power supply to the pixel circuits, one or more adjustment circuits each of which includes a switching element and an adjustment element and is connected to the first power supply voltage wiring lines and the second power supply voltage wiring lines, and a control circuit that controls a current value of the adjustment element in accordance with image data.
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
A display device includes a backlight, a display panel that displays an image by transmitting light from the backlight, and a control unit. In a case where a frame frequency of an image that is displayed on the display panel is a first frequency, the control unit causes the backlight to emit light in a first amount of emitted light, and in a case where the frame frequency is a second frequency that is lower than the first frequency, the control unit causes the backlight to emit light in a second amount of emitted light that is larger than the first amount of emitted light.
G09G 3/34 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source
Provided is a liquid crystal display device with sufficiently reduced or prevented alignment defect generation and useful as an in-cell touch panel capable of providing display in the reflective mode. The liquid crystal display device includes first and second substrates and a liquid crystal layer. The first substrate includes a reflective layer reflecting light, first and second electrodes capable of generating a transverse electric field in the liquid crystal layer, and a first horizontal alignment film. At least one of the first electrode or the second electrode includes strip portions and a slit between adjacent two strip portions among the strip portions. The second substrate includes a second horizontal alignment film in contact with the liquid crystal layer. The liquid crystal layer includes liquid crystal molecules having a positive anisotropy of dielectric constant and is in a twist alignment during no voltage application.
A photoelectric conversion panel accumulates charge in a capacitive element during a period in which a photodiode is irradiated by light, by conducting electricity to a first transistor in a state in which a second transistor is interrupted and also in which a third transistor is interrupted, reads the charge accumulated in the capacitive element during a read period, by conducting electricity to the second transistor in a state in which the first transistor is interrupted, and continuously resets the photodiode during a period other than the period in which the photodiode is irradiated by light, by conducting electricity to the third transistor in a state in which the first transistor is interrupted.
A display device includes a first substrate having a first surface defined as a display surface and a second surface that is an opposite surface of the first surface, a second substrate disposed opposite the second surface of the first substrate, and a conductive film disposed on the second surface of the first substrate. The display surface is divided into a display area displaying an image and a non-display area displaying no image. The conductive film is disposed to overlap at least the display area and includes synthetic resin material having light transmissive properties.
An optical system includes a half mirror; a first at least one optical element including a first film-shaped optical element to be attached to a first plane; a second at least one optical element including a second film-shaped optical element to be attached to a second plane, disposed at a position symmetric to a position at which the first at least one optical element is disposed with respect to the half mirror, and having a shape symmetric to a shape of the first at least one optical element with respect to the half mirror; and a convex lens.
A light-emitting element (2) comprises an emissive layer (23) located between an anode (21) and a cathode (25). The emissive layer contains a plurality of quantum dots (30) and an inorganic matrix (31) which fills the space in between the plurality of quantum dots and which contains a metal oxide. The inorganic matrix includes a second part (42) and a first part (41) containing the metal oxide. The ratio of oxygen atoms to metal atoms in the second part is lower than the ratio of oxygen atoms to metal atoms in the first part, and is equal to or higher than the ratio of oxygen atoms to metal atoms in metal oxides that are stoichiometric.
H05B 33/20 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
H05B 33/10 - Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A vapor deposition device (1) is provided with a touch plate (4) and a touch plate control unit. The touch plate presses a vapor deposition target (X) against a vapor deposition mask (3) from the side opposite to a vapor deposition source (2). The touch plate control unit controls the position of the touch plate in a first direction (D1) from the vapor deposition target to the vapor deposition mask. The touch plate includes a first touch plate (41) that overlaps a first region (X1) of the vapor deposition target, and a second touch plate (42) that overlaps a second region (X2) of the vapor deposition target. The touch plate control unit individually controls the positions of the first touch plate and the second touch plate.
A light-emitting element includes an anode and a cathode, a light-emitting layer positioned between the anode and the cathode, first and second nanoparticles positioned between the anode and the light-emitting layer and including a metal atom, and an organic molecule that has a first functional group capable of bonding to the first nanoparticle and a second functional group having a hole transport property and that is positioned between the first nanoparticle and the second nanoparticle.
A touch panel system includes a touch panel and a controller. The touch panel includes an active matrix substrate, a color filter substrate, and a liquid crystal layer located between the active matrix substrate and the color filter substrate. The active matrix substrate includes a drive electrode and a detection electrode. The drive electrode and the detection electrode are disposed on a surface of the active matrix substrate which faces the liquid crystal layer. The color filter substrate includes a conductor. The conductor is disposed on a surface of the color filter substrate which faces the liquid crystal layer. The controller is configured to supply a drive signal to the drive electrode and obtain a signal value from the detection electrode and to detect a pressing force applied to the touch panel by an indicator, based on the signal value obtained from the detection electrode.
A wiring board includes first lines and second lines extending along a first direction, a first electrode connected to the second lines, a third line extending along a second direction crossing the first direction, and a signal supply connected to the first lines and not connected to the second lines and the third line. At least two first lines that are arranged at an interval in the second direction and overlap at least two second lines, respectively, via an insulating film, and are defined as second line overlapping first lines. The signal supply is configured to supply a first signal to one of the second line overlapping first lines and supply a second signal having an opposite polarity from a polarity of the first signal to another one of the second line overlapping first lines. The third line is connected to the at least two second lines.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A tactile sensation presenting device includes: a tactile sensation presenting section having a plurality of electrodes to present a tactile sensation by electrical stimulation at a specific portion of a user; and a control section capable of controlling the tactile sensation presenting section to provide electrical stimulation using at least one of the plurality of electrodes as an anode and at least another one of the plurality of electrodes as a cathode. The control section measures a flowability of an electric current through the specific portion of the user and adjusts an execution mode of the electrical stimulation based on a result of the measurement.
This light-emitting element (2) comprises a light-emitting layer (23) positioned between an anode (21) and a cathode (25). The light-emitting layer includes a plurality of quantum dots (30) and an inorganic matrix (31) that fills the spaces between the plurality of quantum dots and has a metal oxide. The inorganic matrix includes a first part (41) and a second part (42) each having a metal oxide. The ratio of oxygen atoms to metal atoms in the second part is higher than the ratio of oxygen atoms to metal atoms in the first part, and is equal to or less than the ratio of oxygen atoms to metal atoms in the metal oxides that are stoichiometric.
H05B 33/20 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
H05B 33/10 - Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
A display device (100) according to the present disclosure comprises: a film substrate (FS); a light-emitting element layer (ED) that is located in a layer above the film substrate (FS) and that includes a plurality of light-emitting elements; an inorganic sealing film (K1) that covers the light-emitting element layer (ED); a plurality of pairs of banks (B1, B2) that are located, in plan view, between the outer periphery of the inorganic sealing film (K1) and the outer periphery of the film substrate (FS) and that face each other so as to be spaced apart; and a filler (FM) that is located, in plan view, between at least one of the pairs of banks (B1, B2) of the plurality of pairs of banks (B1, B2) and that contracts or expands through curing.
patents
