A solar cell, comprising a silicon cell main body (110), a first transparent conductive oxide layer (120), a second transparent conductive oxide layer (130), an insulating passivation layer (160), and a second electrode (150), wherein the insulating passivation layer (160) covers edges of the back face of the silicon cell main body (110), and at the edges of the back face of the silicon cell main body (110), the second transparent conductive oxide layer (130) and the first transparent conductive oxide layer (120) are arranged spaced apart from each other by means of the insulating passivation layer (160) arranged therebetween.
H10F 10/164 - Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
H10F 71/10 - Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
A heterojunction solar cell includes a cell substrate and a conductive layer. The conductive layer includes a first transparent conductive film, a silver electrode, and a second transparent conductive film. The first transparent conductive film is disposed on a surface of the cell substrate, the silver electrode is disposed on a partial region of the first transparent conductive film, and the second transparent conductive film covers the silver electrode and the first transparent conductive film.
H10F 10/166 - Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
H10F 71/10 - Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
A method for preparing a solar cell, and a solar cell. The method comprises: subjecting a textured silicon wafer to first doping source introduction, so as to form an oxide layer containing doping atoms on a surface of the silicon wafer; then, performing a propulsion treatment, so as to diffuse the doping atoms into the silicon wafer and form a first area of a doped region; and then sequentially subjecting the silicon wafer to an oxide layer removal treatment and a doping source introduction and annealing treatment, so as to form a second area of the doped region on the surface of the silicon wafer.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
C30B 31/06 - Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structureApparatus therefor by contacting with diffusion material in the gaseous state
A solar cell and a preparation method therefor. The solar cell comprises: a silicon substrate, which silicon substrate has a front surface; and an anti-ultraviolet composite film (200), wherein the anti-ultraviolet composite film (200) is arranged on the front surface, and the anti-ultraviolet composite film (200) comprises a silicon oxide layer (10) and a single-film silicon nitride layer (20) which are arranged in a stacked mode, the silicon oxide layer (10) being located on the surface of the silicon substrate that is away from the silicon nitride layer (20), and the refractive index of the silicon nitride layer (20) gradually increasing in the direction away from the silicon oxide layer (10).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A solar cell and a preparation method therefor. The solar cell comprises: a battery matrix (100), and a first transparent conductive thin film (105) and first gate lines (107), which are arranged in sequence on a first surface of the battery matrix, wherein the first transparent conductive film (105) has a plurality of first regions (1051) and a second region (1052); the first gate lines (107) are disposed in the first regions (105); and in the direction of thickness of the first transparent conductive thin film (105), the thickness of each first region (1051) is greater than the thickness of each second region (1052).
The present disclosure discloses a high-efficiency silicon heterojunction (HJT) solar cell and a manufacturing method thereof, and belongs to the technical field of solar cells. In the solar cell of the present disclosure, an N-type crystal silicon wafer is successively provided with a thin SiO2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO2 layer, an amorphous silicon doped N-type layer, a TCO conductive layer, and an electrode on a front surface; and successively provided with a thin SiO2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO2 layer, an amorphous silicon doped P-type layer, a TCO conductive layer, and an electrode on a rear surface. The amorphous silicon doped P-type layer includes a lightly boron doped amorphous silicon layer and a heavily boron doped amorphous silicon layer.
H01L 31/0747 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A solar cell, comprising a silicon cell main body (110), a first transparent conductive oxide layer (120), a second transparent conductive oxide layer (130), an insulating passivation layer (160), and a second electrode (150), wherein the insulating passivation layer (160) covers edges of the back face of the silicon cell main body (110), and at the edges of the back face of the silicon cell main body (110), the second transparent conductive oxide layer (130) and the first transparent conductive oxide layer (120) are arranged spaced apart from each other by means of the insulating passivation layer (160) arranged therebetween.
H01L 31/20 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor material
Provided in embodiments of the present application are a solar cell and a manufacturing method therefor, relating to the field of photovoltaic cells. The solar cell comprises a doped silicon wafer, a passivation layer and an N-type crystalline silicon layer being sequentially stacked near-to-far on the front surface of the doped silicon wafer, a passivation layer and a P-type crystalline silicon layer being sequentially stacked near-to-far on the back surface of the doped silicon wafer, and the passivation layer being made of silicon oxide. The solar cell has high photoelectric conversion efficiency and low printing cost of gate lines, and the gate lines formed by subsequent printing and sintering are not prone to breakage.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
A solar cell, a textured surface structure and a method for preparing the same are provided. The textured surface structure is formed on a surface of a silicon wafer, and the surface has a grid line covered area and a light-receiving exposure area. The textured surface structure includes a first textured surface formed on the grid line covered area, and a second textured surface formed on the light-receiving exposure area. The texture size of the first textured surface is larger than the texture size of the second textured surface.
The present application relates to the technical field of manufacturing of solar cells, and in particular to a solar cell and a manufacturing method therefor. The manufacturing method for the solar cell comprises: texturing two surfaces of a silicon wafer; then sequentially depositing a first intrinsic amorphous silicon layer and a phosphorus-doped amorphous silicon layer on the front surface of the silicon wafer; then oxidizing the back surface of the silicon wafer to form a silicon oxide layer on the back surface of the silicon wafer; then removing the silicon oxide layer on the back surface of the silicon wafer by using an acid solution; and finally, sequentially depositing a second intrinsic amorphous silicon layer and a boron-doped amorphous silicon layer on the back surface of the silicon wafer. According to the manufacturing method, the impact on a suede surface on the back surface of the silicon wafer can be reduced while the winding plating is removed, so that the problem of cell electric leakage is solved to a certain extent, and cells having good electrical performance and excellent yield are obtained.
H01L 31/20 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor material
H01L 31/076 - Multiple junction or tandem solar cells
H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks
11.
SOLAR CELL AND PREPARATION METHOD, AND POWER GENERATION DEVICE
Disclosed in the present disclosure is a heterojunction solar cell, comprising a cell substrate (100) and a conductive layer, wherein the conductive layer comprises a first transparent conductive thin film (210), a silver electrode (220) and a second transparent conductive thin film (230), the first transparent conductive thin film (210) being arranged on the surface of the cell substrate (100), the silver electrode (220) being arranged in a partial region on the first transparent conductive thin film (210), and the second transparent conductive thin film (230) covering the silver electrode (220) and the first transparent conductive thin film (210).
H01L 31/0747 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
H01L 31/20 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor material
12.
SOLAR CELL AND FRONT ELECTRODE THEREOF, AND MANUFACTURING METHOD
Disclosed are a high-efficiency and high-reliability PERC solar cell and a front electrode thereof, and a manufacturing method, which belong to the solar cell technology. Busbars of the front electrode of solar cell of the present disclosure includes fine busbars and solder joints distributed on the fine busbars at intervals. Each fine busbar between adjacent solder joints includes a straight fine busbar connecting the two solder joints, and side fine busbars located on both sides of the straight fine busbar respectively. In the method for manufacturing the front electrode, the busbars and the fingers are printed by a step-by-step printing process.
2 layer, a doped P-type amorphous silicon layer, a TCO conductive layer and an electrode are sequentially disposed on a back surface of the N-type crystalline silicon wafer. The doped P-type amorphous silicon layer includes a lightly B-doped amorphous silicon layer and a heavily B-doped amorphous silicon layer.
H01L 31/0747 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
H01L 31/20 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor material
14.
SOLAR CELL, AND TEXTURED SURFACE STRUCTURE AND METHOD FOR PREPARING SAME
A solar cell, and a textured surface structure and a method for preparing same, which belong to the field of solar cells. The textured surface structure is formed on a surface of a silicon wafer, and the surface has gate line covering areas and light-receiving exposed areas. On this basis, the textured surface structure comprises: first textured surfaces, which are formed in the gate line covering areas; and second textured surfaces, which are formed in the light-receiving exposed areas, wherein the textured surface size of the first textured surface is greater than the textured surface size of the second textured surface. By means of the textured surface structure, the electrical properties of a cell can be improved.
322O, so as to increase the passivation effect of the AlOx film as a whole. Meanwhile, by means of the process conditions of low deposition rate and high oxygen content, the negative charge density of AlOx is further increased in a bottom layer, and the field passivation effect of the back surface of the silicon wafer is improved; and an outer layer uses a high deposition rate process to ensure that the whole process time is not affected. By means of the solar cell prepared by the technical route provided in the present disclosure, the conversion efficiency can be improved by 0.05-0.10%.
H01L 31/0747 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/20 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor material
17.
HJT CELL HAVING HIGH PHOTOELECTRIC CONVERSION EFFICIENCY AND PREPARATION METHOD THEREFOR
22222 layer, an amorphous silicon doped P-type layer, a TCO conductive layer, and an electrode are sequentially disposed on the back surface of the N-type crystalline silicon wafer; and the amorphous silicon doped P-type layer comprises a B-lightly-doped amorphous silicon layer and a B-heavily-doped amorphous silicon layer. According to the prepared heterojunction solar cell of the present application, the photoelectric conversion efficiency can be increased to 24.3% or above, a short-circuit current and an open-circuit voltage are obviously improved, and the photoelectric conversion efficiency of the silicon heterojunction solar cell can be effectively improved.
H01L 31/0747 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/20 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor material
18.
SOLAR CELL AND FRONT ELECTRODE THEREOF, AND MANUFACTURING METHOD
The present application relates to the technical field of solar cells, and discloses an efficient high-reliability PERC solar cell and a front electrode thereof, and a manufacturing method. A busbar of the front electrode of the solar cell of the present application comprises fine busbars and solder joints distributed on the fine busbars at intervals. A fine busbar between adjacent solder joints comprises a straight fine busbar for connecting the two solder joints, and side fine busbars located on both sides of the straight fine busbar. According to the manufacturing method for the front electrode of the solar cell of the present application, the busbars and subgrids use a step-by-step print process. By using the technical solution of the present application, the conversion efficiency of a cell can be improved, and the quality and reliability of the cell can be effectively improved.
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
patents
