Provided are a laminated structure including an epitaxial film having good adhesion and crystallinity, an electronic device, an electronic apparatus, and a manufacturing method that can provide the same in an industrially advantageous manner.
Provided are a laminated structure including an epitaxial film having good adhesion and crystallinity, an electronic device, an electronic apparatus, and a manufacturing method that can provide the same in an industrially advantageous manner.
In a method for manufacturing a laminated structure in which an epitaxial layer is laminated on a crystal substrate with at least a compound film interposed therebetween, the lamination is performed by a step of providing a compound element supply sacrificial layer containing a compound element on the crystal substrate and a step of forming the epitaxial layer using the compound element of the compound element supply sacrificial layer.
[Problem] To provide a crystal having excellent crystallinity, a multilayer structure, and an element, an electronic device, an electronic appliance, and a system which are obtained using these. [Solution] An electroconductive crystal which includes a crystalline nitride, wherein the crystalline nitride includes a nitride of Hf and Zr. The crystal is used to produce, for example, a Schottky barrier diode (SBD), a junction barrier Schottky diode (JBS), a metal-semiconductor field-effect transistor (MESFET), a high-electron mobility transistor (HEMT), a metal-oxide-film-semiconductor field-effect transistor (MOSFET), a static induction transistor (SIT), a junction-type field-effect transistor (JFET), an insulated-gate bipolar transistor (IGBT), a light-emitting diode (LED), or a semiconductor device comprising a combination of these.
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
[Problem] To provide: a crystal having excellent crystallinity; a layered structure; and an element, an electronic device, an electronic apparatus, and a system that use the crystal and the layered structure. [Solution] This layered structure is produced by forming at least a compound film on a crystal substrate, and then layering a crystal film containing a crystal made of a crystalline metal compound product containing metal compound products including compound products of Hf, Zr, and Si as main components. The layering is performed by forming the crystal film using compound elements in the compound film.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
[Problem] The present invention provides: a crystal which has excellent crystallinity; a multilayer structure; and an element, an electronic device, an electronic apparatus and a system, each of which uses the crystal and the multilayer structure. [Solution] When a multilayer structure is produced by forming at least a compound film on a crystal substrate and subsequently superposing a crystal film, which contains a crystal that is formed of a crystalline metal compound that contains, as a main component, a metal compound containing a compound of Hf, Zr and Ce, on the compound film, the superposition is carried out by forming the crystal film using the compound elements in the compound film.
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
[Problem] To provide a crystal having excellent crystallinity and a laminate structure, and an element, an electronic device, an electronic apparatus, and a system using same. [Solution] Provided is a laminate structure in which an epitaxial film, which is composed of a conductive metal oxide, is provided on a buffer layer directly or with another layer therebetween, wherein, by means of the laminate structure including a crystalline film containing an oxide of Hf and/or Zr, the buffer layer is used to manufacture a Schottky barrier diode (SBD), a junction barrier Schottky diode (JBS), a metal-semiconductor electric field effect transistor (MESFET), a high-electron-mobility transistor (HEMT), a metal-oxide-semiconductor field-effect transistor (MOSFET), a static induction transistor (SIT), a junction electric field effect transistor (JFET), an insulated gate bipolar transistor (IGBT), a light emitting diode (LED), or a semiconductor device composed of the combination of same, etc.
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H10N 30/20 - Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
H10N 30/30 - Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
[Problem] To provide: a laminated structure with excellent bending strength; an element; an electronic device; an electronic apparatus; and a system. [Solution] This laminated structure is constituted of at least a first layer and a second layer that are layered onto a crystalline substrate. The first layer is made of a metallic compound film, and the second layer is made of a metal film of a metal that undergoes martensitic transformation by heat treatment or machining. The crystalline substrate, the first layer, and the second layer are aligned in roughly the same crystal axis direction. The laminated structure is used to manufacture a piezoelectric element or a semiconductor element.
H02N 2/00 - Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
H10N 30/20 - Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
H10N 30/30 - Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
H10N 30/50 - Piezoelectric or electrostrictive devices having a stacked or multilayer structure
H10N 30/87 - Electrodes or interconnections, e.g. leads or terminals
7.
PIEZOELECTRIC BODY, LAMINATED STRUCTURE, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND METHODS FOR MANUFACTURING SAME
[Problem] To provide a piezoelectric body that has excellent hysteresis properties, a laminated structure including the piezoelectric body, an electronic device, an electronic apparatus, and methods by which the foregoing can be obtained in an industrially advantageous manner. [Solution] At least a compound film is formed on a crystal substrate, then an epitaxial film including a crystalline compound is laminated, and further a single crystalline film composed of a conductive metal is laminated on the epitaxial film directly or via another layer, and, when a piezoelectric film is laminated on the single crystalline film directly or via another layer, the laminating of the epitaxial film is performed by forming the epitaxial film using a compound element in the compound film, and the laminating of the piezoelectric film is performed under a vacuum or a reduced pressure, to thereby obtain a piezoelectric body in which the remnant polarization Pr+at an applied voltage of 0 V is more than or equal to 75 μC/cm2.
H10N 30/045 - Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
H10N 30/06 - Forming electrodes or interconnections, e.g. leads or terminals
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
[Problem] To provide a piezoelectric body having excellent hysteresis properties, a laminate structure including the piezoelectric body, an electronic device, an electronic apparatus, and manufacturing methods with which it is possible to obtain the above in an industrially advantageous manner. [Solution] At least a compound film is formed on a crystal substrate, then an epitaxial film including a crystalline compound is laminated, and further a single crystal film composed of an conductive metal is laminated on the epitaxial film directly or with another layer therebetween, and then, when a piezoelectric film is laminated on the single crystal film directly or via another layer therebetween, the laminating of the epitaxial film is performed by forming the epitaxial film using a compound element in the compound film, and the laminating of the piezoelectric film is performed by sputtering, to thereby obtain a piezoelectric body in which the center of hysteresis of the amount of polarization with respect to an applied voltage is shifted to the positive applied voltage side, and a remnant polarization Pr+at the applied voltage of 0V is more than or equal to 20 μC/cm2.
H10N 30/045 - Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
H10N 30/06 - Forming electrodes or interconnections, e.g. leads or terminals
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
[Problem] To provide: a piezoelectric body that has excellent hysteresis characteristics; a laminated structure, an electronic device, and an electronic apparatus that each comprise the piezoelectric body; and production methods which make it possible to obtain each of these in an industrially advantageous manner. [Solution] At least a compound film is formed on a crystal substrate. An epitaxial film containing a crystalline compound is then laminated. A single crystal film constituted by a conductive metal is laminated on the epitaxial film either directly or with another layer therebetween. Thereafter, a piezoelectric film is laminated on the single crystal film either directly or with another layer therebetween. The epitaxial film is laminated by using an elemental compound in the compound film to form the epitaxial film. The piezoelectric film is laminated by a coating method. Thus, obtained is a piezoelectric body in which the center of hysteresis of the polarization amount with respect to applied voltage is shifted to the negative applied voltage side, and in which residual polarization Pr+at an applied voltage of 0 V is not less than 20 μC/cm2.
H10N 30/045 - Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
H10N 30/06 - Forming electrodes or interconnections, e.g. leads or terminals
H10N 30/074 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H10N 30/077 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
[Problem] To provide a laminate structure that has excellent crystallinity, a semiconductor device, and methods by which it is possible to produce the same in an industrially advantageous manner. [Solution] The present invention involves laminating a buffer layer that includes, on a semiconductor crystal substrate, a crystal film containing Hf and/or Zr and having a cubic structure, and laminating an epitaxial film made of a compound semiconductor on the buffer layer directly or with another layer therebetween, to produce a Schottky barrier diode (SBD), a junction barrier Schottky diode (JBS), a metal-semiconductor field-effect transistor (MESFET), a high-electron-mobility transistor (HEMT), a metal-oxide-semiconductor field-effect transistor (MOSFET), a static induction transistor (SIT), a junction field-effect transistor (JFET), an insulated-gate bipolar transistor (IGBT), a light-emitting diode (LED), or a semiconductor device including a combination thereof.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
11.
ELEMENT, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND SYSTEM
[Problem] To provide a surface acoustic wave element that is environmentally friendly and has superior accuracy, and an electronic device, an electronic apparatus, and a system in which the surface acoustic wave element is used. [Solution] In an element that includes a circular or substantially circular piezoelectric body and one or more interdigital electrodes provided on the piezoelectric body so that a surface acoustic wave can propagate in the circumferential direction or a substantially circumferential direction, the piezoelectric body in the propagation path of the surface acoustic wave is fitted with a reflector, to thereby fabricate a high-accuracy sensor that uses a bulk acoustic wave generated between the surface acoustic wave and piezoelectric body and the reflector.
[Problem] To provide: a layered structure having excellent crystallinity; a semiconductor device; and a manufacturing method by which such structure and device can be obtained in an industrially advantageous manner. [Solution] In the present invention, a buffer layer containing a conductive crystalline film that contains a nitride or oxinitride of Hf and/or Zr is stacked on a semiconductor crystal substrate. On the buffer layer, an epitaxial film comprising a compound semiconductor is stacked directly or with another layer therebetween. A semiconductor device is manufactured, the device formed by comprising the following, or a combination of the following: a schottky-barrier diode (SBD); a junction barrier schottky diode (JBS); a metal-semiconductor field-effect transistor (MESFET); a high-electron-mobility transistor (HEMT); a metal-oxide-semiconductor field-effect transistor (MOSFET); a static induction transistor (SIT); a junction field-effect transistor (JFET); an insulated-gate bipolar transistor (IGBT); or a light-emitting diode (LED).
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 21/338 - Field-effect transistors with a Schottky gate
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
13.
ELECTRODE, LAMINATED STRUCTURE, ELECTRONIC DEVICE, ELECTRONIC EQUIPMENT, AND METHODS FOR PRODUCING SAME
[Problem] To provide an electrode which comprises an epitaxial film that has good adhesiveness and crystallinity, a laminated structure, an electronic device, and electronic equipment which include the electrode, and production methods which make it possible to obtain the same in an industrially advantageous manner. [Solution] When forming at least a compound film on a crystal substrate, subsequently laminating an epitaxial film that includes a crystalline compound, and further laminating a second epitaxial film of a differing composition from the epitaxial film either directly on the epitaxial film or with another layer therebetween, the second epitaxial film is a single-crystal film having a zero-defect region in an area of not less than 100 nm2 for constituting an electrode, and the epitaxial film is laminated by using a compound element in the compound film to form the epitaxial film.
H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
H10N 30/06 - Forming electrodes or interconnections, e.g. leads or terminals
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
H10N 30/50 - Piezoelectric or electrostrictive devices having a stacked or multilayer structure
H10N 30/87 - Electrodes or interconnections, e.g. leads or terminals
14.
MULTILAYER STRUCTURE, ELECTRONIC DEVICE, ELECTRONIC APPARATUS AND MANUFACTURING METHOD FOR SAME
[Problem] Provided are a multilayer structure, an electronic device and an electronic apparatus comprising an epitaxial film with satisfactory adhesion and crystallization, and a manufacturing method that can provide foregoing in an industrially advantageous manner. [Solution] This method for manufacturing a multilayer structure comprises stacking an epitaxial layer on a crystal substrate via at least a compound film, wherein said stacking is carried out by a step for providing a compound element supplying sacrificial layer containing a compound element on the crystal substrate and a step for forming the epitaxial layer with the compound element in the compound element supplying sacrificial layer.
H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
H10N 30/06 - Forming electrodes or interconnections, e.g. leads or terminals
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
[Problem] To provide: a crystal having excellent shape memory properties and corrosion resistance; a multilayer structure, an electronic device and an electronic instrument each containing the crystal; and methods respectively for producing these products in an industrially advantageous manner. [Solution] At least an oxide film is formed on a crystal substrate, then an epitaxial film containing a crystalline compound is laminated on the oxide film, and then a second epitaxial film that has a different chemical composition from that in the aforementioned epitaxial film is laminated on the aforementioned epitaxial film directly or with another layer interposed therebetween. In this procedure, the lamination of the epitaxial film is performed by forming the epitaxial film using a compound element in the compound layer. In this manner, an epitaxial film containing a crystal showing a hyperelasticity of 10% or more is formed.
H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
H10N 30/05 - Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
H10N 30/06 - Forming electrodes or interconnections, e.g. leads or terminals
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H10N 30/078 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
H10N 30/20 - Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
H10N 30/50 - Piezoelectric or electrostrictive devices having a stacked or multilayer structure
01 - Chemical and biological materials for industrial, scientific and agricultural use
07 - Machines and machine tools
09 - Scientific and electric apparatus and instruments
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semi-conductors manufacturing machines; epitaxial growth
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management; marketing research or analysis; providing
information concerning commercial sales; advertising and
publicity services; providing commercial information and
advice for consumers in the choice of products and services;
retail services or wholesale services for electrical
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