Abstract

A wafer exposure layout method includes planning a plurality of linear exposure paths for the wafer. Each linear exposure path includes a plurality of rectangular exposure field areas arranged side by side along a straight line, and any rectangular exposure field area partially overlaps another adjacent rectangular exposure field area. Then a photomask with a honeycomb structure composed of a plurality of completely regular hexagonal units is provided. The photomask moves one by one along the plurality of linear exposure paths, and when the photomask moves along any linear exposure path, the photomask is moved one by one along the plurality of rectangular exposure field areas. A side of the photomask that moves to a first exposure position in any rectangular exposure field area is partially embedded with an opposite side of the photomask that moves to a second exposure position in another adjacent rectangular exposure field area.

IPC Classes  ?

• G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

Abstract

A coordinate conversion method for multiple dies on a wafer is provided. The coordinate conversion method includes the following steps. First, provide a mechanical absolute coordinate of the dies on the wafer, where the mechanical absolute coordinate includes a horizontal coordinate and a vertical coordinate, and the horizontal coordinate and the vertical coordinate is not an integer. Secondly, a magnification factor is calculated, where the magnification factor is a ratio of a minimum horizontal spacing to a minimum vertical spacing between two adjacent dies, and the magnification factor is greater than 1. Finally, a relative coordinate is calculated, wherein the relative coordinate system is to replace one of the horizontal coordinate and the vertical coordinate in the mechanical absolute coordinate which is not an integer by multiply it with the magnification factor.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H01L 21/66 - Testing or measuring during manufacture or treatment

Abstract

A light-sensing device and a manufacturing method thereof are provided. The light-sensing device includes a substrate, at least one light-emitting component and a light-sensing component. The light-emitting component is used to emit a light, and the light-sensing component is used to receive the diffuse-reflected light after the light is diffuse-reflected by an external object. Moreover, the light-emitting component and the light-sensing component are individually and separately mounted on the substrate.

IPC Classes  ?

• G01N 21/47 - Scattering, i.e. diffuse reflection
• G01N 21/359 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using near infrared light
• G01N 33/66 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving blood sugars, e.g. galactose

Abstract

A photosensitive chip, a manufacturing method thereof, and a photosensitive module are provided. The photosensitive chip includes an isosceles trapezoid body, a positive electrode, and a negative electrode. The isosceles trapezoid body comprises an N-type semiconductor layer and a P-type semiconductor layer. The P-type semiconductor layer is disposed adjacent to the N-type semiconductor layer. The positive electrode is electrically connected to the P-type semiconductor layer, and the negative electrode is electrically connected to the N-type semiconductor layer.

IPC Classes  ?

• H10F 77/14 - Shape of semiconductor bodiesShapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H10F 30/22 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
• H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
• H10F 39/10 - Integrated devices
• H10F 39/95 - Assemblies of multiple devices comprising at least one integrated device covered by group , e.g. comprising integrated image sensors
• H10F 71/00 - Manufacture or treatment of devices covered by this subclass
• H10F 77/122 - Active materials comprising only Group IV materials
• H10F 77/20 - Electrodes
• H10H 29/20 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group

Abstract

A semiconductor device is provided. The semiconductor device comprises a substrate, an upper electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer and a plurality of conductive through holes. The second semiconductor layer, the light-emitting layer, the first semiconductor layer and the upper electrode are sequentially disposed on the substrate. The conductive through holes are vertically disposed in the first semiconductor layer so that the upper electrode is electrically connected to the light emitting layer through the conductive through holes.

IPC Classes  ?

• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector

Abstract

A method for manufacturing a flip-chip light emitting diode includes providing a first substrate; performing an epitaxial process to form a semiconductor structure on the first substrate, and the semiconductor structure includes a current conductive layer with a bonding surface and defines a first electrode projection area and a second electrode projection area; performing a diffusion process toward the bonding surface by a diffusion material to form at least one path area with a high doping concentration in the current conductive layer; performing a bonding process to bond a second substrate to the bonding surface; and removing the first substrate and forming a first electrode and a second electrode on a side of the semiconductor structure adjacent to the first substrate. A position of the first electrode corresponds to the first electrode projection area, and a position of the second electrode corresponds to the second electrode projection area.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Abstract

A physiological value sensing device and a sensing method thereof are provided. The physiological value sensing device comprises an input module and a computing module. The input module is used to provide a multi-band light to illuminate a testee to generate a plurality of optical signals, and the optical signals include a plurality of interference signals and a physiological target signal. The computing module is used to establish a physiological normal model. The physiological normal model has multiple physiological sample values corresponding to the multi-band light. The computing module converts the interference signals and the physiological target signal into the physiological normal model for fitting. A physiological target value corresponding to the physiological target signal is generated after eliminating the interference signals based on the physiological sample values.

IPC Classes  ?

• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters
• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value

Abstract

The invention provides a light emitting diode, which comprises a substrate, a buffer layer and at least two light emitting units. The buffer layer is stacked on the substrate. The at least two light emitting units are stacked sequentially on the buffer layer in a stacked manner. Each light emitting unit includes a semiconductor light emitting structure and a two-dimensional material layer, and the two-dimensional material layer is stacked on the semiconductor light emitting structure correspondingly, and each light emitting unit emits light with a specific wavelength through the semiconductor light emitting structure respectively. The specific wavelength corresponding to one of the at least two light emitting units, which is closer to the substrate, is not smaller than the specific wavelength corresponding to the other of the at least two light emitting units, which is farther from the substrate.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/40 - Materials therefor

Abstract

An optical sensor device is provided. The optical sensor device includes a carrier substrate, a plurality of light sources disposed on the carrier substrate for generating light of a plurality of wavelengths, a photodiode sensor disposed on the carrier substrate and spaced apart from the light sources at a distance, and a multi-passband filter formed on a top surface of the photodiode sensor. The multi-passband filter has a plurality of passbands corresponding to the light of the plurality of wavelengths from the light sources.

IPC Classes  ?

• A61B 5/00 - Measuring for diagnostic purposes Identification of persons

Abstract

A light emitting diode structure is provided. The light emitting diode includes a permanent substrate, a bonding metal composite layer, a mirror composite layer and an epitaxial semiconductor composite layer. The bonding metal composite layer is disposed on the permanent substrate, the mirror composite layer is disposed on the bonding metal composite layer, and the epitaxial semiconductor composite layer is disposed on the mirror reflection composite layer. There is a non-flat surface between the bonding metal composite layer and the permanent substrate, and the surface roughness (Ra) of the non-flat surface is less than 0.5 microns (μm).

IPC Classes  ?

• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector

Abstract

An integrated circuit is provided. The integrated circuit includes a transistor array and a guard ring. The guard ring is formed on a periphery of the transistor array. The guard ring includes a plurality of ring regions, and each of the ring regions includes a doped area. A doped area of an inner side of the ring regions is greater than a doped area of an outer side of the ring regions.

IPC Classes  ?

• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

Abstract

An all-lateral wide band-gap (WBG) cascode switch device is provided, which includes a source terminal; a gate terminal; a drain terminal; a lateral enhancement-mode silicon semiconductor switch, having a first source electrode, a first drain electrode, and a first gate electrode; and a lateral depletion-mode WBG semiconductor switch disposed laterally apart from and cascoded with the lateral enhancement-mode silicon semiconductor switch, having a second source electrode, a second drain electrode, and a second gate electrode. The first source electrode, the first drain electrode, and the first gate electrode of the lateral enhancement-mode silicon semiconductor switch and the second source electrode, the second drain electrode and the second gate electrode of the lateral depletion-mode WBG semiconductor switch have the same vertical orientation to face the same side.

IPC Classes  ?

• H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Abstract

A bio-sensing device is provided, which includes a carrier substrate, a light source disposed on the carrier substrate, a photodiode sensor disposed on the carrier substrate and laterally spaced apart from the light source, a light-blocking wall disposed on the carrier substrate and located between the light source and the photodiode sensor, a cover glass, a dual-band filter coated on a front surface of the cover glass, a first optical adhesive formed on a back surface of the cover glass, and a second optical adhesive covering the carrier substrate, the light source, the photodiode sensor and the light-blocking wall, and being used to be bonded with the first optical adhesive. The first optical adhesive has been cured when the second optical adhesive is bonded with the first optical adhesive, and the second optical adhesive is cured by irradiation with ultraviolet light after being in contact with the first optical adhesive.

IPC Classes  ?

• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters
• H01L 31/0203 - Containers; Encapsulations
• H01L 31/0216 - Coatings
• H01L 31/173 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate

Abstract

A wide band-gap photo relay is provided. The wide band-gap photo relay includes first and second input terminals, first and second output terminals, a ground terminal, a light source, a photodiode array, and a depletion-mode wide band-gap semiconductor switch. The light source is configured to generate a light signal and has first and second ends coupled to the first and second input terminals, respectively. The photodiode array is disposed at a distance from the light source and has positive and negative terminals. The photodiode array senses the light signal and generates a voltage difference between the positive and negative terminals when the light signal is sensed. The positive terminal is coupled to the ground terminal. The depletion-mode wide band-gap semiconductor switch has a gate electrode coupled to the negative terminal, a drain electrode coupled to the first output terminal, and a source electrode coupled to the second output terminal.

IPC Classes  ?

• H03K 3/42 - Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
• H03K 17/56 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices

Abstract

A semiconductor structure is provided. The semiconductor structure includes a substrate, a semiconductor barrier layer and a gate electrode. The semiconductor barrier layer is disposed above the substrate. The gate electrode is disposed above the semiconductor barrier layer and has a first gate barrier layer and a second gate barrier layer. The first gate barrier layer is disposed between the semiconductor barrier layer and the second gate barrier layer. The work function of the first gate barrier layer is greater than that of the semiconductor barrier layer, and the work function of the second gate barrier layer is greater than that of the first gate barrier layer.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 29/49 - Metal-insulator semiconductor electrodes
• H01L 29/66 - Types of semiconductor device

Abstract

An optical biomedical measurement device is provided. The optical biomedical measurement device includes a substrate, a light source disposed on the substrate, a photodiode sensor disposed on the substrate, laterally spaced from the light source, a plurality of light-blocking walls disposed vertically on the substrate, laterally located on both sides of the light source and on both sides of the photodiode sensor, a sealing layer covering the light source, the photodiode sensor, and the light-blocking walls, a cover plate bonded to the sealing layer, a plurality of light-absorption films vertically aligned with the light-blocking walls, disposed in a plurality of etching regions on a top surface of the cover plate, an optical filter film disposed on the cover plate and the light-absorption films, a plurality of nano-metal particles arranged on the optical filter film with a distance therebetween, and an antibacterial optical film covering the nano-metal particles and the optical filter film.

IPC Classes  ?

• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• A61L 31/02 - Inorganic materials
• A61L 31/16 - Biologically active materials, e.g. therapeutic substances
• G02B 1/18 - Coatings for keeping optical surfaces clean, e.g. hydrophobic or photo-catalytic films
• G02B 5/20 - Filters

Abstract

A ceiling plate and an epitaxial growth device having the same are provided. The epitaxial growth device includes a wafer carrying platform and a reaction chamber. The wafer carrying platform is used to carry at least one wafer, and the reaction chamber accommodates the wafer carrying platform and includes a ceiling plate and a gas supply device. The ceiling plate is disposed on the top of the reaction chamber, and the gas supply device provides a reaction gas to at least one wafer on the wafer carrying platform. The ceiling plate includes a plurality of recessed structures so that when the reaction gas flows through the recessed structures, the friction resistance with the surface of the ceiling plate is reduced.

IPC Classes  ?

• C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C30B 25/08 - Reaction chambersSelection of materials therefor

Abstract

An optical sensing device and a method for manufacturing the same are provided. The optical sensing device comprises a substrate, an optical acting area, a filter layer and a carbonized sidewall. The optical acting area is disposed on the substrate. The filter layer covers the optical acting area and selectively allows only a light beam with a specific wavelength to pass therethrough and be received by the optical acting area while blocking the light beams with other wavelengths. The carbonized sidewall covers the sidewall of the filter layer and a portion of the sidewall of the substrate to prevent the light beams with the other wavelengths from being received by the optical acting area through the sidewall of the substrate.

IPC Classes  ?

• G01J 1/04 - Optical or mechanical part
• G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors

Abstract

A method for inspecting a light-emitting diode package is provided. The inspecting method comprises the following steps. First, provide a light-emitting diode package, wherein the light-emitting diode package includes a light-emitting diode chip, a lead frame and an encapsulation body. The light-emitting diode chip is disposed on the lead frame and the height of the lead frame is higher than that of the light-emitting diode chip. The encapsulation body covers the light-emitting diode chip and a portion of the lead frame. Next, remove a portion of the encapsulation body to expose the upper surface of the light-emitting diode chip.

IPC Classes  ?

• G01R 31/26 - Testing of individual semiconductor devices

Abstract

The invention provides a non-invasive blood glucose monitoring device with a wearing fit detection function, comprising a substrate, a blood glucose monitoring module, an optical feedback sensing module and at least one light-blocking wall. The substrate defines a first setting area for disposing the blood glucose monitoring module and a second setting area for disposing the optical feedback sensing module. The second setting area is between an edge of the substrate and the first setting area. The optical feedback sensing module includes at least one light-emitting element and at least one light-receiving element. Each light-emitting element emits a light signal corresponding to at least one specific wavelength, and each light-receiving element receives the light signal corresponding to the at least one specific wavelength, after being reflected, as a basis for determining the wearing fit. The at least one light-blocking wall is located between the first setting area and the second setting area.

IPC Classes  ?

• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value

Abstract

The invention provides a manufacturing method for a non-invasive blood glucose monitoring device, which comprises the following steps: providing a substrate; performing an injection molding process or an electroplating process, to form at least one light-blocking wall on the substrate, wherein each light-blocking wall includes a lower wall-structure and an upper wall-structure, and the lower wall-structure connects the substrate and the upper wall-structure connects the lower wall-structure; arranging a light-emitting element and a light-receiving element on the substrate and separating the light-emitting element and the light-receiving element by the at least one light-blocking wall; forming a packaging structure on the substrate in which the light-emitting element and the light-receiving element are packaged; and disposing a transparent cover on the packaging structure and the at least one light-blocking wall and limiting the transparent cover to a configuration height by the at least one light-blocking wall.

IPC Classes  ?

• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value

Abstract

A non-invasive blood glucose monitoring module with high optical transmittance includes a substrate, a first detecting unit and a second detecting unit. The first detecting unit includes a first light source set, a first photosensitive element and first blocking wall structures. The first photosensitive element receives light, with a first wavelength, emitted from the first light source set. The first blocking wall structures are located between the two first light-emitting elements and between the first light source set and the first photosensitive element. The second detecting unit includes a second light source set, a second photosensitive element and second blocking wall structures. The second photosensitive element receives light, with a second wavelength, emitted from the second light source set. The second blocking wall structures are located between the two second light-emitting elements and between the second light source set and the second photosensitive element.

IPC Classes  ?

• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits

Abstract

A method for forming a wet oxidation aperture shape of a VCSEL device, including: placing a VCSEL wafer having a circular VCSEL mesa with a diameter of 25 um-30 um into a wet oxidation furnace; vacuumizing the wet oxidation furnace; ramping up a temperature of the wet oxidation furnace to 250-350° C. and maintaining for a first period, and introducing N2 and H2O gases into the wet oxidation furnace during the first period; continuously introducing N2 and H2O gases, while ramping up the temperature to 350-450° C. and maintaining for a second period; continuously introducing N2 and H2O gases, while ramping up the temperature to 400-450° C. and maintaining for a third period; maintaining 400-450° C. to initiate oxidation of the VCSEL wafer; after the oxidation is completed, introducing N2 gas into the wet oxidation furnace to cool it down to 150° C.; and taking out the VCSEL wafer.

IPC Classes  ?

• H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Abstract

The invention relates to a light emitting diode, which comprises a substrate and a semiconductor epitaxy structure. The semiconductor epitaxial structure is disposed on the substrate. The semiconductor epitaxial structure comprises semiconductor composite layers and a plurality of current spreading layers which are disposed among the semiconductor composite layers. The doping concentrations of the upper and lower adjacent current spreading layers are alternately high and low.

IPC Classes  ?

• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

The present invention relates to a semiconductor structure and a method for forming the same. The semiconductor structure comprises a substrate, a channel layer, a barrier layer, a source electrode, a gate electrode, a drain electrode, and a cap layer. The channel layer is disposed on the substrate, the barrier layer is disposed on the channel layer, and the source electrode, the gate electrode, and the drain electrode are disposed on the barrier layer. Except the regions directly above the source electrode and the drain electrode, the cap layer covers the source electrode and the drain electrode.

IPC Classes  ?

• H01L 29/66 - Types of semiconductor device
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Abstract

A optical sensing device includes a substrate, an optical acting area and a filter layer. The optical acting area is disposed on the substrate. The filter layer covers the optical acting area and selectively allows only a light beam with a specific wavelength to pass through and be received by the optical acting area while blocking the light beams with other wavelengths. Each of the two sides of the substrate has a bevel structure. The filter layer covers each bevel structure of each side to prevent the light beams with other wavelengths from passing through the two sides of the substrate being received by the optical acting area.

IPC Classes  ?

• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• H01L 31/0216 - Coatings
• H01L 31/102 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier

Abstract

A silicon substrate structure has a substrate, a first groove, a second groove and a third groove. The substrate includes a first surface and a second surface. The first surface is formed on one side of the Si(111) lattice plane, and the second surface is formed on the opposite side of the Si(111) lattice plane. The first groove is disposed along a first direction on the second surface. The second groove is disposed along a second direction on the second surface. The third groove is disposed along a third direction on the second surface. The first direction is defined as the direction from the Si(111) lattice plane to the Si(1-1-1) lattice plane, the second direction is defined as the direction from the Si(-11-1) lattice plane to the Si(1-11) lattice plane, and the third direction is defined as the axial direction of the Si[1-10] lattice orientation.

IPC Classes  ?

• H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

A porous silicon structure manufacturing method is provided. The porous silicon structure manufacturing method involves forming an epitaxial layer on a substrate and forming a protective layer on the epitaxial layer. The protective layer includes an opening region. An electrochemical etching is performed within the opening region to create a porous silicon structure on the epitaxial layer. After removing the protective layer, a wafer with a porous silicon structure is obtained.

IPC Classes  ?

• C30B 33/10 - Etching in solutions or melts
• C30B 29/06 - Silicon

Abstract

A wide-band-gap diode and manufacturing method thereof are provided. The method of manufacturing a wide-band-gap diode involves growing an N-type doped epitaxial layer on an N-doped substrate. P-type ions are implanted into the epitaxial layer to form an active area, a junction termination extension region, and an edge region. The active area exhibits an axially symmetric graticule pattern, with higher doping area density towards the center of the active area. The junction termination extension region surrounds the active area, and the edge region encircles both of the active area and the junction termination extension region to enhance the wide-band-gap diode's capability to withstand surge currents.

IPC Classes  ?

• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 29/66 - Types of semiconductor device

Abstract

The present invention relates to a light emitting diode (LED) which comprises multiple point-like conductive electrodes, a dielectric layer, and an epitaxial composite layer. The dielectric layer is disposed around each point-like conductive electrode, and the epitaxial composite layer is disposed both on the point-like conductive electrodes and the dielectric layer. Each point-like conductive electrode includes an ohmic-contact metal layer and a carbon-doped gallium arsenide epitaxial layer. The carbon-doped gallium arsenide epitaxial layer is disposed on the ohmic-contact metal layer and electrically connected to the epitaxial composite layer.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/40 - Materials therefor
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector

Abstract

The present invention relates to a light-emitting diode (LED) which comprises multiple point-like transparent conductive electrodes, a dielectric layer, and an epitaxial composite layer. The dielectric layer is disposed around each point-like transparent conductive electrode. The epitaxial composite layer comprises a carbon-doped gallium arsenide epitaxial layer. The carbon-doped gallium arsenide epitaxial layer is disposed both on each point-like transparent conductive electrode and the dielectric layer and electrically connected to each point-like transparent conductive electrode.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

A monolithic Opto-MOSFET relay and manufacturing method thereof are provided. The manufacturing method of the monolithic Opto-MOSFET relay involves using a low ion doping concentration substrate. In this method, a first P-N junction structure, a second P-N junction structure, and an N-P-N junction structure are formed within an epitaxial layer. Dry etching is employed to divide the epitaxial layer into a high-voltage region and a low-voltage region, which are electrically isolated from the each other. Subsequently, an isolation layer is deposited on the epitaxial layer, and photomask etching is performed to generate multiple patterns. A metal layer is then deposited to form a light emitting diode (LED) based on the pattern within the first P-N junction structure, a photodiode within the second P-N junction structure, and at least one MOSFET within the N-P-N junction structure.

IPC Classes  ?

• H01L 31/112 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/51 - Insulating materials associated therewith
• H01L 29/66 - Types of semiconductor device
• H01L 31/101 - Devices sensitive to infrared, visible or ultraviolet radiation

Abstract

The present invention relates to a light-emitting diode (LED) which comprises a light-emitting layer, an upper electrode, a lower electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a low refractive index dielectric layer. The upper electrode and the lower electrode are respectively disposed on two opposite sides of the light-emitting layer. The first semiconductor layer is disposed between the light-emitting layer and the upper electrode. The second semiconductor layer is disposed between the light-emitting layer and the lower electrode. The third semiconductor layer is disposed between the second semiconductor layer and the lower electrode. The low refractive index dielectric layer is disposed to surround the lower electrode. The upper electrode is vertically overlapped with the lower electrode and the first semiconductor layer and the third semiconductor layer are electrically opposite to the second semiconductor layer.

IPC Classes  ?

• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
• H01L 33/40 - Materials therefor

Abstract

The present invention relates to a light-emitting diode (LED) which includes an epitaxial composite layer, a dielectric layer, a transparent conductive layer, and a metal layer. Specifically, the epitaxial composite layer is disposed on the dielectric layer, the dielectric layer is disposed on the transparent conductive layer, and the transparent conductive layer is disposed on the metal layer. Moreover, an outer edge of the transparent conductive layer is covered by the metal layer.

IPC Classes  ?

• H01L 33/42 - Transparent materials
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A VCSEL chip structure for quick test and a method for forming the same are provided. The VCSEL chip structure has probing and emission regions divided by a first trench, and includes a substrate, an epitaxial layer, a cap layer, and first and second electrodes. The epitaxial layer is formed on a top surface of the substrate. The cap layer is formed on the epitaxial layer. The first electrode is formed on the cap layer and on a bottom and two sidewalls of the first trench. The second electrode is formed on a bottom surface of the substrate. The probing region has multiple second trenches which divide the probing region into multiple sub-regions. The epitaxial layer in the emission region has a first wet oxidation layer with an aperture. The epitaxial layer in each sub-region of the probing region has a second wet oxidation layer spanning the respective sub-region.

IPC Classes  ?

• H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• H01S 5/02 - Structural details or components not essential to laser action
• H01S 5/34 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

Abstract

An electroluminescence device, including an epitaxial layer, a first contact electrode, a bonding layer, a substrate, a first metal pad, a second contact electrode and a second metal pad, is provided. The epitaxial layer has a trench which vertically divides the epitaxial layer into a first region and a second region so that the first region and the second region are separated from each other. The first contact electrode is disposed over the epitaxial layer and has an aperture. The bonding layer is disposed over the first contact electrode. The substrate is disposed over the bonding layer. The first metal pad is disposed below the first region and extends vertically to be electrically connected to the first contact electrode. The second contact electrode is disposed below the second region. The second metal pad is disposed below the second region with the second contact electrode therebetween.

IPC Classes  ?

• H01S 5/042 - Electrical excitation
• H01S 5/02 - Structural details or components not essential to laser action
• H01S 5/0234 - Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Abstract

The invention provides a non-invasive blood glucose monitoring device, which comprises a flexible circuit board, at least one blood glucose monitoring module and an adhesive layer. The at least one blood glucose monitoring module is arranged on the flexible circuit board, and each blood glucose monitoring module includes a barrier structure, a light emitting element, a light sensing element and a transparent cover. The barrier structure forms a first space and a second space isolated from each other; the light emitting element and the light sensing element are respectively located in the first space and the second space; the transparent cover is combined with the barrier structure to enclose the first space and the second space. The adhesive layer is arranged on the flexible circuit board and is located around the at least one blood glucose monitoring module.

IPC Classes  ?

• A61B 5/00 - Measuring for diagnostic purposes Identification of persons

Abstract

A miniaturized blood glucose measurement module using polarized light is provided, which includes an electromagnet assembly, a light-emitting assembly, and a light-receiving assembly. The electromagnet assembly includes a metal base and a coil. The metal base includes an accommodating portion and a side surface. The accommodating portion is located within a scope of the side surface, and the coil is wound on the side surface. The light-emitting assembly is embedded in the accommodating portion and includes a light-emitting element and a first polarizing element. A light emitted by the light-emitting element passes through the first polarizing element to generate a polarized light, and the light-emitting assembly forms a light-emitting surface. The light-receiving assembly is embedded in the accommodating portion and adjacent to the light-emitting assembly, and the light-receiving assembly includes a light-sensing element, a magnetic crystal and a second polarizing element. The light-sensing element receives the reflected polarized light which passes through the magnetic crystal and the second polarizing element sequentially, and the light-receiving assembly forms a light-receiving surface.

IPC Classes  ?

• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters

Abstract

The present invention provides an ambient light sensor with ultraviolet light detection function, which is adopted to receive external light for sensing. The ambient light sensor comprises a visible light sensing chip and a wavelength conversion layer. The visible light sensing chip is used for sensing light corresponding to the response band of visible light, and the visible light sensing chip includes a light receiving surface. The wavelength conversion layer is used to convert light corresponding to a specific ultraviolet light band of the external light into light corresponding to a response band of visible light, and the wavelength conversion layer covers at least a part of the light receiving surface.

IPC Classes  ?

• G01J 1/02 - Photometry, e.g. photographic exposure meter Details
• G01J 1/04 - Optical or mechanical part
• G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors

Abstract

A solid-state lidar device includes an emitting module and a receiving module. The emitting module includes a laser driver and a light emitting source. The laser driver is used to drive the light emitting source to emit a light signal. The laser driver is a high electron mobility transistor, and the light emitting source includes at least one laser diode. The receiving module is used to receive the light signal being reflected and generate an output signal according to the light signal, and the receiving module includes an avalanche photodiode. The avalanche photodiode includes a lead sulfide quantum dot colloid layer, and the lead sulfide quantum dot colloid layer is arranged on a reflection path of the light signal received by the avalanche photodiode.

IPC Classes  ?

• G01S 7/481 - Constructional features, e.g. arrangements of optical elements

Abstract

The present invention provides an integrating method for optoelectronic elements and circuits, including: providing a silicon wafer including a plurality of circuit structures; providing a plurality of optoelectronic element dies, and each optoelectronic element die including a substrate and an optoelectronic element structure; performing a die-to-wafer bonding process so that one optoelectronic element die is correspondingly bonded to one circuit structure of the silicon wafer through the optoelectronic element structure; performing a compression over-molding process to encapsulate the optoelectronic element dies and a surface of the silicon wafer by a molding material; performing a grinding and polishing process to remove an unnecessary portion of the molding material and an unnecessary portion of the substrate of each optoelectronic element die; and performing a dicing process to form a plurality of integrated structures with the optoelectronic elements and the circuits.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

The invention provides a non-invasive blood glucose monitoring module with polarized light, which comprises a light emitting component, a light receiving component and a connecting member. The light emitting component includes a light emitting element and a first polarizing element, and light emitted from the light emitting element passes through the first polarizing element to transform into polarized light. A light emitting surface is formed for the light emitting component. The light receiving component includes a light sensing element, a magnetic crystal layer and a second polarizing element, and the light sensing element receives the polarized light being reflected and sequentially passing through the magnetic crystal layer and the second polarizing element. A light receiving surface is formed for the light receiving component. The connecting member connects one side of the light emitting component and one side of the light receiving component.

IPC Classes  ?

• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters

Abstract

A light-emitting diode structure includes a substrate, a semiconductor light-emitting structure, and an electrode. The semiconductor light-emitting structure is located on the substrate, and the semiconductor light-emitting structure includes a top surface and a plurality of side walls. A surface roughening area is formed on the top surface. The electrode is located on the top surface. The surface roughening area is located between the electrode and the plurality of side walls, and the top surface forms a first flat part between the surface roughening area and the plurality of side walls.

IPC Classes  ?

• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

The present invention provides a light emitting diode, which includes a substrate, a first intermediary layer and a two-dimensional material structure. The first intermediary layer is located on the substrate. The two-dimensional material structure is located on the first intermediary layer, and the two-dimensional material structure is formed by stacking a plurality of two-dimensional material layers. The number of the plurality of two-dimensional material layers is not less than 2. The light with a specific wavelength is emitted or absorbed by the two-dimensional material structure.

IPC Classes  ?

• H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

The invention provides a curved non-invasive glucose monitoring module includes a substrate, a barrier structure, a light emitting element, a monitoring element and a transparent cover. The barrier structure, the light-emitting element and the monitoring element are all arranged on the substrate. The barrier structure forms a first space and a second space isolated from each other. The light emitting element is located in the first space, and the monitoring element is located in the second space. The transparent cover is combined with the barrier structure to close the first space and the second space. At least one of the substrate and the transparent cover is a curved structure.

IPC Classes  ?

• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters

Abstract

The present invention provides a manufacturing method for a light sensing element. The method includes the following steps: providing an epitaxy; performing a device process to form a semiconductor structure on the epitaxy, wherein the semiconductor structure includes a light absorbing layer and a plurality of sidewalls; performing a wet etching process to form a recess inward from a sidewall surface of each sidewall of the semiconductor structure; and performing a coating process to form a bandpass filter layer on the semiconductor structure. Light incident from each of the sidewalls is blocked from entering the light absorbing layer by the recess of each of the sidewalls.

IPC Classes  ?

• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• H01L 31/0216 - Coatings
• H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode

Abstract

An infrared light sensing device includes a substrate, a light source module, a light sensing module, a barrier structure and a protective cover. The light source module, the light sensing module and the barrier structure are arranged on the substrate, and the barrier structure is used to isolate the light source module and the light sensing module. The protective cover is bonded to the barrier structure and includes a plate, a first bandpass optical film and a second bandpass optical film. The first bandpass optical film is disposed on the plate and faces the light source module, and the first bandpass optical film corresponds to a first infrared light spectrum range. The second bandpass optical film is disposed on the plate and faces the light sensing module, the second bandpass optical film corresponds to a second infrared light spectrum range located within the first infrared light spectrum range.

IPC Classes  ?

• G01J 3/10 - Arrangements of light sources specially adapted for spectrometry or colorimetry
• G01J 3/02 - SpectrometrySpectrophotometryMonochromatorsMeasuring colours Details

Abstract

The present invention provides a manufacturing method of a light sensing element. The method includes the following steps: providing a preformed structure, wherein the preformed structure includes a semiconductor structure and a bandpass filter layer stacked on the semiconductor structure; performing a laser cutting process on the preformed structure along a direction perpendicular to a surface of the bandpass filter layer so that the preformed structure is cut into a plurality of light sensing elements. Each light sensing element has a plurality of sidewalls. Each sidewall forms a scorched surface by the laser cutting process to block the entry of external light.

IPC Classes  ?

• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• H01L 31/0216 - Coatings

Abstract

A photodiode structure is provided, which includes a first electrode, a semiconductor structure, a first anti-reflective layer, a second anti-reflective layer, a second electrode, and a blocking structure. The semiconductor structure is located on the first electrode. The first anti-reflective layer is located on the semiconductor structure layer. The second anti-reflective layer is located on the first anti-reflective layer. The second electrode is located on the second anti-reflective layer and penetrates the first anti-reflective layer and the second anti-reflective layer to electrically connect the semiconductor structure. The blocking structure is arranged between the first anti-reflective layer and the second electrode to prevent the first anti-reflective layer from directly contacting the second electrode.

IPC Classes  ?

• H01L 31/0216 - Coatings
• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions

Abstract

The present invention provides a light-emitting diode current steering device for enhancing the light extraction efficiency of the light-emitting diode and improving current-steering, comprising: a contact electrode; a substrate connected to the contact electrode; a first electrode connected to the substrate; a first semiconductor layer electrically connected to the first electrode; the light-emitting layer electrically connected to the first semiconductor layer; the second semiconductor layer electrically connected to the light-emitting layer; the second electrode having a main electrode and a plurality of extension electrodes; a current steering layer disposed between one side of the second semiconductor layer and one side of the second electrode and having a main semiconductor layer and an etching layer etched with the second electrode as a pattern reference to increase the resistance by etching so that the current flows in the direction toward the main semiconductor layer to achieve a steering effect.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/42 - Transparent materials

Abstract

A semiconductor laser element includes a semiconductor epitaxial structure, a light-absorbing structure, a transparent conductive layer, and an electrode layer. The semiconductor epitaxial structure includes a light-emitting layer and a light-emitting control layer. The light-emitting control layer forms a light-emitting opening area. The light-absorbing structure forms a hollow part to expose the semiconductor epitaxial structure. The band gap of the light-absorbing structure is smaller than the light-emitting band gap. The transparent conductive layer includes a recessed window part and an extension part. The recessed window part is located in the hollow part and covers the semiconductor epitaxial structure. The extension part covers the light absorbing structure. The electrode layer forms an opening to expose to the transparent conductive layer, and the opening of the layer, and the recessed window part is located in the opening. The position of the recessed window part corresponds to that of the light-emitting opening area.

IPC Classes  ?

• H01S 5/06 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium

Abstract

The present invention provides a high electron mobility transistor, which includes a substrate, a buffer layer, a channel layer, a first semiconductor epitaxial structure, a second semiconductor epitaxial structure, a drain, a source and a gate. The first semiconductor epitaxial structure is located on the channel layer and sequentially includes a first aluminum gallium nitride layer, a supply layer and a second aluminum gallium nitride layer, and the first semiconductor epitaxial structure is formed with a hollow part extending from a top surface of the second aluminum gallium nitride layer toward the channel layer. The second semiconductor epitaxial structure is located in the hollow part and sequentially includes an aluminum gallium nitride layer and a P-type gallium nitride layer. The drain and the source are respectively arranged on the second aluminum gallium nitride layer, and the gate is arranged on the P-type gallium nitride layer.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
• H01L 29/66 - Types of semiconductor device

Abstract

The invention provides a biomedical detection photoelectric module, which includes a circuit substrate, a plurality of isolating barriers, a light-emitting unit, a photosensitive unit, and a light-guiding assembly. The light-guiding assembly provides a first optical element and a second optical element, respectively, corresponding to a light-emitting unit and a light-sensing unit. The first optical element has a first pattern layer to alter the emitting angle of the first light generated by the light-emitting unit. The second optical element has a second pattern layer to alter the incident angle of a second optical element entering the light-sensing unit. The first light is guided by the first optical element so that the energy of the first light is concentrated and incident on a predetermined area of a human's skin layer. The second light in the predetermined area is guided by the second optical element to enter the light-sensing unit. The present invention further provides a process method for the biomedical detection photoelectric module.

IPC Classes  ?

• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters
• H01L 31/0203 - Containers; Encapsulations
• H01L 31/0232 - Optical elements or arrangements associated with the device
• H01L 31/173 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The present disclosure provides a structure of an ultraviolet light sensing-enhanced photodiode. The main structure of the photodiode includes a silicon photodiode and an infrared conversion layer formed on a surface that receives an ultraviolet light of the of the silicon photodiode. When the ultraviolet light irradiates on the ultraviolet light sensing-enhanced photodiode through the infrared conversion layer, the infrared conversion layer converts the ultraviolet light into an infrared light. The first portion of the infrared light is propagated to the silicon photodiode and then converted to a photoelectric current. The second portion of the infrared light is absorbed by the infrared conversion layer. An infrared reflection layer is also provided for reflecting the third portion of the infrared light that is originally escaped from the infrared reflection layer, and the third portion of the infrared light can be reflected into the silicon photodiode.

IPC Classes  ?

• H01L 31/0232 - Optical elements or arrangements associated with the device
• C09K 11/66 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing germanium, tin or lead
• H01L 31/0216 - Coatings
• H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type

Abstract

The present invention provides a high electron mobility transistor, which includes a substrate, a buffer layer, a gallium nitride layer, a two-dimensional material structure, a covering layer, a drain, a source and a gate. The buffer layer is located on the substrate. The gallium nitride layer is located on the buffer layer and forms a channel layer. The two-dimensional material structure is located on the channel layer. The covering layer partially covers the two-dimensional material structure. The drain and the source are arranged on the two-dimensional material structure, and the gate is arranged on the covering layer.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , ,  or
• H01L 29/267 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , in different semiconductor regions

Abstract

The present invention provides a light-emitting diode structure, comprising a substrate, a first semiconductor layer, a second semiconductor layer, a second electrode and at least one current blocking trench. The substrate includes a first electrode. The first semiconductor layer is located on the substrate. The second semiconductor layer is located on the first semiconductor layer, and a light-emitting layer is formed between the first semiconductor layer and the second semiconductor layer. The second electrode is located on the second semiconductor layer. Each current blocking trench is recessed from a light exit surface of the second semiconductor layer toward the substrate. By means of the at least one current blocking trench, the current flowing from the second electrode flows through the light-emitting layer located outside the second electrode to the first electrode in a diffusing manner.

IPC Classes  ?

• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

The present invention provides a photodiode structure, which includes a chip, an electrode group, an electrode protection layer and a metal alloy band-pass optical film. The electrode group is arranged on the chip, and the electrode group includes a positive electrode and a negative electrode; the electrode protection layer is arranged on the chip and covers the electrode group; the metal alloy band-pass optical film is arranged on the electrode protection layer and includes a plurality of layered structures, and the plurality of layered structures includes at least two metal alloy material layers.

IPC Classes  ?

• H01L 31/0232 - Optical elements or arrangements associated with the device
• H01L 31/0216 - Coatings

Abstract

The invention provides a sidelight-type non-invasive glucose monitoring module, which includes a substrate, an sidelight-type light source assembly, an sidelight-type light sensing assembly and a blocking member. The sidelight-type light source assembly is arranged on the substrate and includes a light-emitting element and a first light-guiding element. The sidelight-type light sensing assembly is arranged on the substrate and includes a light-sensing element and a second light-guiding element. The blocking member is arranged between the sidelight-type light source assembly and the sidelight-type light sensing assembly to block the sidelight-type light source assembly from the sidelight-type light sensing assembly.

IPC Classes  ?

• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters
• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value

Abstract

The present invention provides a light emitting diode structure, including a substrate, a semiconductor light emitting structure, an electrode, and a protection structure. The semiconductor light-emitting structure is located on the substrate, and the semiconductor light-emitting structure includes a top surface. The electrode is located on the top surface, and the electrode includes a pad portion and at least one extension portion. One end of each extension portion is connected to the pad portion, and the pad portion has a first maximum height away from the top surface. The protection structure is located on the top surface and connected to the electrode, and the protection structure has a second maximum height away from the top surface. Wherein the second maximum height is greater than the first maximum height.

IPC Classes  ?

• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

The present invention provides an optocoupler, including a substrate, a gallium nitride light emitter, a gallium nitride light sensing switch, a reflective structure and a transmission medium. The gallium nitride light emitter and the gallium nitride light sensing switch are disposed on the substrate and electrically isolated from each other. The gallium nitride light emitter is used for emitting a light signal according to an input signal. The gallium nitride light sensing switch is used for sensing the light signal and generating an output signal accordingly. The reflective structure is used for reflecting the light signal. The transmission medium is at least between the gallium nitride light emitter, the gallium nitride light sensing switch and the reflective structure. The light signal from the gallium nitride light emitter is transmitted in the transmission medium and transmitted obliquely to the gallium nitride light sensing switch after being reflected by the reflective structure.

IPC Classes  ?

• H01L 31/173 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
• H01L 31/0203 - Containers; Encapsulations
• H01L 31/0232 - Optical elements or arrangements associated with the device
• H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds

Abstract

The present invention provides a manufacturing method of a photodiode structure. The method includes the following steps: providing a substrate; performing an epitaxial process to form a first semiconductor layer on the substrate; performing an active area patterning and etching process to form a recessed portion on the first semiconductor layer; performing a first coating process to form a first anti-reflection layer on the first semiconductor layer; and performing an ion implantation process to pass through the first anti-reflection layer and form a second semiconductor layer in the recessed portion.

IPC Classes  ?

• H01L 31/0216 - Coatings
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The present disclosure provides a silicon carbide (SiC) opto-thyristor and a method for manufacturing the same. The SiC opto-thyristor includes a SiC substrate, a SiC light emitter and a SiC light-sensitive thyristor. In the method, a SiC epitaxy is mainly formed on the SiC substrate with the doped P-type and N-type semiconductor materials to define the regions for forming the SiC light emitter and the basic structures of the SiC light-sensitive thyristor. A passivation layer is deposited. Conducting channels for the SiC light emitter and the SiC light-sensitive thyristor are formed by an etching process. After patterning a metal conductor layer, a structure of electrical contacts of the SiC light emitter and the SiC light-sensitive thyristor is formed. Then, terminals of an input voltage and an output voltage of the silicon carbide opto-thyristor are formed after a wire bonding process upon the electrical contacts. Finally, a packaging process is performed.

IPC Classes  ?

• H01L 31/111 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/87 - Thyristor diodes, e.g. Shockley diodes, break-over diodes

Abstract

The present invention provides a non-invasive flexible blood glucose detecting and sleep monitoring device for monitoring the sleep state and blood glucose state of the detected person. The non-invasive flexible blood glucose detecting and sleep monitoring device includes a detection module including: a substrate; a plurality of optical modules, each being an optical cover plates with a coating layer; retaining walls, being disposed on the substrate, and the retaining walls respectively establishing a first space and a second space with the substrate and the optical modules; a light emitting unit, being disposed in the first space; and the sensing unit, being disposed in the second space. The non-invasive flexible blood glucose detecting and sleep monitoring device further includes a flexible piezoelectric module for being placed on the detected person; and a detecting unit, being connected to the detection module and the flexible piezoelectric module.

IPC Classes  ?

• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters

Abstract

The surface-emitting laser with a multilayer thermally conductive mirror includes a light-emitting layer, an oxide layer, first and second mirror layers, and first and second contact layers. The light-emitting layer generates light with a wavelength of A. The oxide layer has an oxide aperture to limit the current flowing into the light-emitting layer. The first mirror layer includes a first high thermally conductive layer and a first low thermally conductive layer. The second mirror layer includes a second high thermally conductive layer and a second low thermally conductive layer. The first contact layer is disposed of on one side of the first mirror layer by the first low thermally conductive layer. The second contact layer is disposed on one side of the second mirror layer by the second high thermally conductive layer. The overall light emission and heat dissipation efficiency can be improved.

IPC Classes  ?

• H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Abstract

The invention provides a silicide capacitive micro electromechanical structure and fabrication method thereof, comprising a substrate, a passivation layer, a silicon layer, a first metal layer, and a dielectric layer. The passivation layer is formed on the substrate; the silicon layer and the first metal layer are formed on the passivation layer. The first metal layer includes a contact part and a conductive part. The contact parts contact at least a part of the silicon layer, and the conductive portion extends away from the silicon layer to electrically connect an external circuit. The dielectric layer is formed on the passivation layer, and at least the silicon layer and the first metal layer are covered by the dielectric layer. After an annealing process is performed, the conductive portion remains in contact with the silicon layer after the silicidation reaction to maintain an electrical connection with the external circuit.

IPC Classes  ?

• B06B 1/02 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy

Goods & Services

Optical sensors; Sensing integrated circuits; LED traffic lights; UV sensors, namely, electronic sensors for measuring solar radiation; Infrared sensors, namely, infrared thermography sensors; Infrared temperature sensors and integrated circuit modules for use with infrared detectors; electric sensors; Car radar Detector; Photoelectric detectors being laser detectors for detecting light beam

Goods & Services

LED streetlamps; LED vehicle lights; LED stage lights being stage lighting apparatus; Vehicle lights; vehicle brake lights; Lighting installations for vehicles; Light bulbs for directional signals for vehicles; Germicidal apparatus, namely, lamps for purifying air; Disinfectant apparatus; Automobile lights being lights for vehicles; Lights being light bulbs; Decorative lamps