A controller for a MEMS gyroscope includes a first portion for generating a drive signal in response to an output from drive capacitors of the MEMS gyroscope, wherein the output signal has a resonant frequency and a phase, a second portion for determining a sampling signal in response to the output, wherein the sampling signal has a frequency that is a multiple of the resonant frequency, and has the phase, a multiplexer for outputting a multiplexed data comprising first data signals from first capacitors and second capacitors of the MEMS gyroscope multiplexed in response to the sampling signal, and a processing portion for reducing the resonant frequency from the multiplexed data.
G01C 19/56 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
G01C 19/5656 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams the devices involving a micromechanical structure
A method for a system includes applying power to a MEMS device while inhibiting applying power to a processor, thereafter determining first sensed data with the MEMS device in response to first event data, when the first sensed data exceeds a first threshold, determining second sensed data with a second MEMS device in response to second event data, when the second sensed data exceeds a second threshold, applying power to the processor, determining with the processor whether a seismic event is occurring in response to the first and the second sensed data, directing with the processor, an electronically-controllable mechanism to shut-off a utility supply, in response to the seismic event being determined.
G01B 5/004 - Measuring arrangements characterised by the use of mechanical techniques for measuring coordinates of points
G01P 15/18 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration in two or more dimensions
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
3.
Method to test the quality factor of a MEMS gyroscope at chip probe
A method for a MEMS device comprises determining in a computer system, a first driving signal for the MEMS device in response to a first time delay and to a base driving signal, applying the first driving signal to the MEMS device to induce the MEMS device to operate at a first frequency, determining a second driving signal for the MEMS device in response to a second time delay and to the base driving signal, applying the second driving signal to the MEMS device to induce the MEMS device to operate at a second frequency, determining a first quality factor associated with the MEMS device in response to the first frequency and the second frequency, determining a quality factor associated with the MEMS device in response to the first quality factor, and determining whether the quality factor associated with the MEMS device, exceeds a threshold quality factor.
G01C 19/5684 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially two-dimensional vibrators, e.g. ring-shaped vibrators the devices involving a micromechanical structure
B81C 99/00 - Subject matter not provided for in other groups of this subclass
A method for a MEMS device includes receiving a diced wafer having a plurality devices disposed upon an adhesive substrate and having an associated known good device data, removing a first set of devices from the plurality of devices from the adhesive substrate in response to the known good device data, picking and placing a first set of the devices into a plurality of sockets within a testing platform, testing the first set of integrated devices includes while physically stressing the first set of devices, providing electrical power to the first set of devices and receiving electrical response data from the first set of devices, determining a second set of devices from the first set of devices, in response to the electrical response data, picking and placing the second set of devices into a transport tape media.
G01R 31/02 - Testing of electric apparatus, lines, or components for short-circuits, discontinuities, leakage, or incorrect line connection
B81C 99/00 - Subject matter not provided for in other groups of this subclass
G01R 1/04 - HousingsSupporting membersArrangements of terminals
G01R 31/26 - Testing of individual semiconductor devices
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A method for operating an electronic device comprising a first and second MEMS device and a semiconductor substrate disposed upon a mounting substrate includes subjecting the first MEMS device and the second MEMS device to physical perturbations, wherein the physical perturbations comprise first physical perturbations associated with the first MEMS device and second physical perturbations associated with the second MEMS device, wherein the first physical perturbations and the second physical perturbations are substantially contemporaneous, determining in a plurality of CMOS circuitry formed within the one or more semiconductor substrates, first physical perturbation data from the first MEMS device in response to the first physical perturbations and second physical perturbation data from the second MEMS device in response to the second physical perturbations, determining output data in response to the first physical perturbation data and to the second physical perturbation data, and outputting the output data.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
H01L 21/8238 - Complementary field-effect transistors, e.g. CMOS
A method for a MEMS device includes receiving a diced wafer having a plurality devices disposed upon an adhesive substrate and having an associated known good device data, removing a first set of devices from the plurality of devices from the adhesive substrate in response to the known good device data, picking and placing a first set of the devices into a plurality of sockets within a testing platform, testing the first set of integrated devices includes while physically stressing the first set of devices, providing electrical power to the first set of devices and receiving electrical response data from the first set of devices, determining a second set of devices from the first set of devices, in response to the electrical response data, picking and placing the second set of devices into a transport tape media.
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
B81C 99/00 - Subject matter not provided for in other groups of this subclass
A method for a MEMS device includes receiving a diced wafer having a plurality devices disposed upon an adhesive substrate and having an associated known good device data, removing a first set of devices from the plurality of devices from the adhesive substrate in response to the known good device data, picking and placing a first set of the devices into a plurality of sockets within a testing platform, testing the first set of integrated devices includes while physically stressing the first set of devices, providing electrical power to the first set of devices and receiving electrical response data from the first set of devices, determining a second set of devices from the first set of devices, in response to the electrical response data, picking and placing the second set of devices into a transport tape media.
A CMOS IC substrate can include sense amplifiers, demodulation circuits and AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. The system can include charge pumps to create higher voltages as required in the system. The system can incorporate ADC to provide digital outputs that can be read via serial interface such as I2C. The system can also include temperature sensor which can be used to sense and output temperature of the chip and system and can be used to internally or externally compensate the gyroscope sensor measurements for temperature related changes. The CMOS IC substrate can be part of a system which can include a MEMS gyroscope having a MEMS sensor overlying the CMOS IC substrate.
G01P 3/00 - Measuring linear or angular speedMeasuring differences of linear or angular speeds
G01C 19/5712 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
An integrated MEMS inertial sensing device can include a MEMS inertial sensor with a drive loop configuration overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS inertial sensor. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. This incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.
G01C 19/5776 - Signal processing not specific to any of the devices covered by groups
G01C 19/5712 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure
G01C 19/5783 - Mountings or housings not specific to any of the devices covered by groups
10.
Synchronous modulation resonator with sigma delta modulator
A Synchronous Modulation Resonator (SMR) device, the device includes a resonator having coupled to a Vd source and a Vr source, wherein the Vd is DC biased, wherein the Vr is AC, wherein the resonator provides a resonator output in response to Vd and Vr, a Sigma Delta Modulator (SDM) coupled to the resonator and to the Vr source, wherein the SDM provides a signal output in response to the resonator output and to the Vr, and a digital output block coupled to the SDM, wherein the digital output block is configured to provide a digital signal representation of the resonator output, in response to the signal output.
A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
12.
Method and device of MEMS process control monitoring and packaged MEMS with different cavity pressures
A method for fabricating an integrated MEMS device and the resulting structure therefore. A control process monitor comprising a MEMS membrane cover can be provided within an integrated CMOS-MEMS package to monitor package leaking or outgassing. The MEMS membrane cover can separate an upper cavity region subject to leaking from a lower cavity subject to outgassing. Differential changes in pressure between these cavities can be detecting by monitoring the deflection of the membrane cover via a plurality of displacement sensors. An integrated MEMS device can be fabricated with a first and second MEMS device configured with a first and second MEMS cavity, respectively. The separate cavities can be formed via etching a capping structure to configure each cavity with a separate cavity volume. By utilizing an outgassing characteristic of a CMOS layer within the integrated MEMS device, the first and second MEMS cavities can be configured with different cavity pressures.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
B81C 99/00 - Subject matter not provided for in other groups of this subclass
An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.
A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
A method for fabricating a multiple MEMS device includes providing a semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel. The first MEMS is encapsulated within the first cavity and the second MEMS device is encapsulated within the second cavity. These devices is encapsulated within a first encapsulation environment at a first air pressure, and encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity is then subjected to a second encapsulating environment at a second air pressure via the channel of the second cavity.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
A centrifuge screening system and method of testing MEMS devices using the system. The wafer level centrifuge screening system can include a base centrifuge system and a cassette mounting hub coupled to the base centrifuge system. The method can include applying a smooth and continuous acceleration profile to one or more MEMS components via the base centrifuge system. Each of the one or more MEMS components can have one or more MEMS devices formed thereon. The one or more MEMS components can be provided in one or more cassettes configured on the cassette mounting hub. The method can also include identifying one or more target MEMS components, which can include identifying stiction in one or more MEMS devices on the one or more MEMS components.
A system comprising an integrated multi-axis MEMS inertial sensor architecture. The system can include a MEMS gyroscope having a MEMS resonator and a MEMS accelerometer overlying a CMOS IC substrate. The CMOS IC substrate can include low noise Charge Sense amplifiers to process the sensed signals, programmable gain amplifiers, a demodulator, mixer, an AGC loop circuit coupled to the MEMS gyroscope to drive MEMS resonator. The CMOS IC also includes programmable Quadrature cancellation, Analog and digital phase shifters are implemented in the architecture to ensure quadrature cancellation and demodulation to achieve optimal performance. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude while consuming low power. The MEMS gyroscope and accelerometer can be coupled to an input multiplexer configured to operate in a time-multiplexed manner.
G01C 19/00 - GyroscopesTurn-sensitive devices using vibrating massesTurn-sensitive devices without moving massesMeasuring angular rate using gyroscopic effects
G01P 3/44 - Devices characterised by the use of electric or magnetic means for measuring angular speed
G01P 9/00 - Measuring speed by using gyroscopic effect, e.g. using gas or using electron beam (using turn-sensitive devices or angular rate sensors using vibrating masses G01C 19/56)
G01P 15/08 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values
G01C 19/5776 - Signal processing not specific to any of the devices covered by groups
G01C 19/5783 - Mountings or housings not specific to any of the devices covered by groups
G01P 15/18 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration in two or more dimensions
18.
Integrated MEMs inertial sensing device with automatic gain control
An integrated MEMS inertial sensing device can include a MEMS inertial sensor with a drive loop configuration overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS inertial sensor. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. This incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.
A system can include a MEMS gyroscope having a MEMS resonator overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. The system incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.
G01C 19/00 - GyroscopesTurn-sensitive devices using vibrating massesTurn-sensitive devices without moving massesMeasuring angular rate using gyroscopic effects
G01P 3/44 - Devices characterised by the use of electric or magnetic means for measuring angular speed
G01P 9/00 - Measuring speed by using gyroscopic effect, e.g. using gas or using electron beam (using turn-sensitive devices or angular rate sensors using vibrating masses G01C 19/56)
G01P 15/08 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values
G01C 19/5776 - Signal processing not specific to any of the devices covered by groups
An improved MEMS transducer apparatus and method is provided. The apparatus has a movable base structure including an outer surface region and at least one portion removed to form at least one inner surface region. At least one intermediate anchor structure is disposed within the inner surface region. The apparatus includes an intermediate spring structure operably coupled to the central anchor structure, and at least one portion of the inner surface region. A capacitor element is disposed within the inner surface region.
H01G 7/00 - Capacitors in which the capacitance is varied by non-mechanical meansProcesses of their manufacture
G01R 3/00 - Apparatus or processes specially adapted for the manufacture of measuring instruments
G01P 15/125 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by capacitive pick-up
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
G01C 19/5783 - Mountings or housings not specific to any of the devices covered by groups
G01P 15/08 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values
21.
Method and device of MEMS process control monitoring and packaged MEMS with different cavity pressures
A method for fabricating an integrated MEMS device and the resulting structure therefore. A control process monitor comprising a MEMS membrane cover can be provided within an integrated CMOS-MEMS package to monitor package leaking or outgassing. The MEMS membrane cover can separate an upper cavity region subject to leaking from a lower cavity subject to outgassing. Differential changes in pressure between these cavities can be detecting by monitoring the deflection of the membrane cover via a plurality of displacement sensors. An integrated MEMS device can be fabricated with a first and second MEMS device configured with a first and second MEMS cavity, respectively. The separate cavities can be formed via etching a capping structure to configure each cavity with a separate cavity volume. By utilizing an outgassing characteristic of a CMOS layer within the integrated MEMS device, the first and second MEMS cavities can be configured with different cavity pressures.
A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.
An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.
G01P 15/13 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by measuring the force required to restore a proofmass subjected to inertial forces to a null position
G01C 19/5762 - Structural details or topology the devices having a single sensing mass the sensing mass being connected to a driving mass, e.g. driving frames
G01C 19/5719 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
G01P 15/125 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by capacitive pick-up
G01P 15/08 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values
G01C 19/5712 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure
A system for testing a device under a high gravitational force including a centrifuge with a rotating member and method of operation thereof. An operating power can be applied to a device, which can be coupled to the rotating member. The system can include a rotational control that can be coupled to the centrifuge. This rotational control can be configured to rotate the rotating member in response to a controlled number of revolutions per time period. The system can also include an analysis device for monitoring one or more signals from the device with respect to the controlled number of revolutions per time period. The analysis device can be configured to determine a stiction force associated with the DUT (Device Under Test) in response to the time-varying gravitational forces and to the one or more signals from the DUTs.
A method and structure for fabricating an inertial sensing device using tilt conversion to sense a force in the out-of-plane direction. The method can include forming anchor structure(s) coupled to portions of a surface region of a substrate member. Also, the method can include forming flexible anchor members coupled to portions of the anchor structures and frame structures, which can be formed overlying the substrate. The method can also include forming flexible frame members coupled to portions of the frame structures and movable structures, which can also be formed overlying the substrate. Forming the movable structures can include forming peripheral and central movable structures, which can be coupled to flexible structure members. Peripheral movable structures having flexible tilting members can convert a pure tilting out-of-plane motion to a pure translational out-of-plane motion. The forming of these elements can include performing an etching process on a single silicon material.
G01P 15/08 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values
G01P 15/12 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by alteration of electrical resistance
G01P 15/02 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces
26.
Multi-axis integrated MEMS inertial sensing device on single packaged chip
A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially configured with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.
G01P 15/18 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration in two or more dimensions
G01P 15/02 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces
G01P 15/08 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values
A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.
A wafer level centrifuge (WLC) system and method of testing MEMS devices using the system. The wafer level centrifuge (WLC) system can include a base centrifuge system and a cassette mounting hub coupled to the base centrifuge system. The method can include applying a smooth and continuous acceleration profile to two or more MEMS wafers via the base centrifuge system. Each of the two or more MEMS wafers can have one or more MEMS devices formed thereon. The two or more MEMS wafers can be provided in two or more wafer holding cassettes configured on the cassette mounting hub. The method can also include identifying one or more target MEMS wafers, which can include identifying stiction in one or more MEMS devices on the one or more MEMS wafers.
A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
An improved MEMS transducer apparatus and method is provided. The apparatus has a movable base structure including an outer surface region and at least one portion removed to form at least one inner surface region. At least one intermediate anchor structure is disposed within the inner surface region. The apparatus includes an intermediate spring structure operably coupled to the central anchor structure, and at least one portion of the inner surface region. A capacitor element is disposed within the inner surface region.
09 - Scientific and electric apparatus and instruments
Goods & Services
Semiconductors, integrated circuits, circuit boards, microcomputers, and micro controllers; computer programs and firmware for monitoring and controlling electronic sensors and transducers and microelectronic mechanical systems (MEMS); electronic sensors, namely, accelerometers; magnetometers, gyroscopes and combinations of the three, mechanical systems (MEMS) modules comprised of electronic and/or inertial sensors packaged with integrated circuitry; electronic sensors for sensing acceleration, inclination, angular rate and acceleration for use in equipment, land, sea, and air vehicles, sporting equipment, household devices, toys and gaming devices, navigation devices, telecommunication devices and equipment, and robotics manufactured by others; mobile cloud internet servers, application software, namely, mobile applications that sense motion, orientation or rotations such as compass, 3D gaming or augmented reality applications
32.
SYSTEM ON A CHIP USING INTEGRATED MEMS AND CMOS DEVICES
An integrated MEMS system in which CMOS and MEMS devices are provided to form an integrated CMOS-MEMS system. The system can include a silicon substrate layer, a CMOS layer, MEMS and CMOS devices, and a wafer level packaging (WLP) layer. The CMOS layer can form an interface region, one which any number of CMOS MEMS devices can be configured.
