A switch control circuit and switch control method are provided. The switch control circuit and switch control method compensate an error of a load current that occurs because of the changing of a slope of an inductor current based on the increase and decrease of an input voltage. The switch control circuit includes a current compensation device that adjusts a gate on time based on a RC resistor and a control signal that senses a gate terminal of a control switch. The current compensation device compensates an error that occurs due to a signal delay to a gate terminal by increasing or decreasing a reference voltage or a sensing voltage, according to an increase or a decrease of an input voltage.
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
A buffer circuit that generates an output voltage based on an input voltage includes an input stage configured to provide a differential current to a load stage based on a difference between the input voltage and the output voltage; the load stage configured to apply gate voltages to output transistors of an output stage based on the differential current; the output stage configured to regulate the output voltage based on the gate voltages applied to the output transistors; and a slew rate compensator configured to provide a first slew rate compensation current and a second slew rate compensation current to the load stage or receive the first slew rate compensation current and the second slew rate compensation current from the load stage based on the difference between the input voltage and the output voltage.
H03K 17/0814 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
H03K 5/24 - Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
H03K 17/16 - Modifications for eliminating interference voltages or currents
A buffer circuit for generating an output voltage according to an input voltage includes: an input stage configured to provide a first differential current to a load stage or receive a second differential current from the load stage based on a difference between the input voltage and the output voltage; the load stage configured to apply gate voltages to a first output transistor and a second output transistor of an output stage based on the first differential current or the second differential current; the output stage configured to regulate the output voltage based on the gate voltages applied to the first output transistor and the second output transistor; and a slew rate compensator configured to provide a source current to the load stage or receive a sink current from the load stage to regulate the gate voltages of the first output transistor and the second output transistor.
A source buffer output switch control circuit for controlling operations of a source buffer output switch configured to transmit a source signal output from a source buffer to a display panel or block the source signal includes: a switch driver configured to generate a switch control signal for controlling the operations of the source buffer output switch based on a switch operation input signal; a current limiter configured to limit a driving current applied to the switch driver in order to control a slew rate of the switch control signal; and a bias block configured to supply the current limiter with a bias voltage for controlling a magnitude of the driving current.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
H03K 17/0812 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
5.
MASK LAYOUT, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD USING THE SAME
A mask layout for forming a semiconductor device includes an active mask pattern, a gate electrode mask pattern, a silicide blocking mask pattern, and a contact mask pattern. The active mask pattern forms source and drain regions in a substrate. The gate electrode mask pattern, disposed to overlap the active mask pattern, forms a gate electrode between the source region and the drain region. The silicide blocking mask pattern is disposed to overlap the gate electrode mask pattern and the active mask pattern in the gate electrode, the source region, and the drain regions to form a silicide blocking region. The contact mask pattern, disposed spaced apart from the silicide blocking mask pattern, forms a contact plug on the substrate. The silicide blocking mask pattern covers the gate electrode mask pattern and extends to the active mask pattern.
A memory repair device for detecting a fault cell in a memory and replacing it with a redundancy cell using a serial interface method is provided. The memory repair device include a repair information control block and at least one memory block including at least one memory. The repair information control block is configured to perform a built-in self-test (BIST) for each memory block, and when a fault cell is detected according to the BIST, receive and store repair information about the fault cell information. The memory block replaced the fault cell with a redundancy cell according to repair information loaded by the repair information control block at the time of operation of the memory. Data is transmitted and received between the repair information control block and the memory block using a serial interface.
A negative level shifter that connects a source terminal and a body region of an element included in a shielding circuit so that the element operates within a medium voltage operating region. The negative level shifter of the present disclosure connects the source terminal and the body region of the shielding circuit so that the voltage between the drain terminal of the shielding circuit and the body region required for negative level shifting is operated in the medium voltage operating region. In addition, the negative level shifter may be able to use a medium voltage transistor rather than a high voltage transistor element provided in the input circuit so that the design area will be reduced compared to the conventional art. Also, the present disclosure suggests a display device with a negative level shifter.
H03K 19/0185 - Coupling arrangementsInterface arrangements using field-effect transistors only
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
8.
REGULATOR CIRCUIT AND OPERATING METHOD FOR THE SAME
A regulator circuit includes a first regulator configured to supply a first current to a VDD pad connected to a power line based on a first output voltage, and a second regulator configured to supply a second current to the VDD pad based on a second output voltage. The second output voltage has dropped by a predetermined delta voltage from the first output voltage.
G05F 1/575 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
G05F 1/595 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load semiconductor devices connected in series
9.
DISPLAY DRIVING IC DEVICE AND PROBE TEST METHOD USING THE SAME
A display driving IC includes first channel block to Nth channel block each including M source amplifiers, N and M being an integer, source driving pads each connected to the M source amplifiers, a multiplexer configured to alternate data outputs of the source amplifiers or selectively provide a test path so that a probe test is performed on a plurality of source amplifiers for each of the first to Nth channel blocks through a test pad selected from the source driving pads, and a control unit configured to control driving of the source amplifiers and multiplexer.
G09G 3/00 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
10.
Temperature sensor for display driver circuit and operating method thereof
The present disclosure relates to a temperature sensor provided in a display driver circuit and an operating method thereof. Disclosed is a temperature sensor provided in a display driver circuit including: a reference voltage generating unit configured to output a set reference voltage; a proportional voltage generating unit configured to output a proportional voltage proportional to a temperature of the circuit; a comparison unit configured to output a flag voltage by comparing magnitudes of the reference voltage and the proportional voltage; and a sensor control unit configured to control the reference voltage generating unit and the proportional voltage generating unit.
G09G 3/00 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
G01K 7/20 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
A power source switching circuit for a memory device includes: a first power source voltage terminal for supplying a first power source voltage, a second power source voltage terminal for supplying a second power source voltage, a first metal-oxide-semiconductor field-effect transistor (MOSFET) and a second MOSFET connected in series with the first power source voltage terminal, a first level shifter connected to the first MOSFET and supplied with the first power source voltage, a second level shifter connected to the second MOSFET and supplied with the second power source voltage, a third MOSFET connected to the second MOSFET, and a third level shifter connected to the third MOSFET and supplied with a third power source voltage, and a memory cell of a non-volatile memory is programmed using the first power source voltage or the second power source voltage.
A method for forming a semiconductor die, includes forming an interlayer dielectric layer on a substrate having a semiconductor die region, a seal-ring region, and a scribe line region, forming a metal pad and a test pad on the interlayer dielectric layer, forming a passivation dielectric layer on the interlayer dielectric layer, the metal pad, and the test pad, first etching the passivation dielectric layer and the interlayer dielectric layer existing between the seal-ring region and the scribe line region to a predetermined depth using a plasma etching process, second etching the passivation dielectric layer to expose the metal pad and the test pad, forming a bump on the metal pad, and dicing the substrate while removing the scribe line region by mechanical sawing.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 23/10 - ContainersSeals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
13.
DISPLAY DEVICE FOR ADJUSTING GAMMA VOLTAGE AND METHOD FOR OPERATING THE SAME
A display device includes: a display panel including a plurality of pixels, a driver integrated circuit (IC) configured to convert digital data corresponding to an input image to an analog data voltage using a gamma voltage, and to supply the analog data voltage to the plurality of pixels, and a power supply configured to supply a pixel driving voltage to the display panel and the driver IC, and the driver IC includes: a weight selector configured to select a weight for adjusting the gamma voltage based on an amount of change in the pixel driving voltage supplied from the power supply, and a gamma reference voltage generating circuit configured to generate a gamma reference voltage based on the selected weight.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
14.
IMAGE PROCESSING APPARATUS INCLUDING LINE BUFFER AND OPERATION METHOD THEREOF
An image processing apparatus includes: a line buffer configured to store image data; a clock gating circuit configured to apply a clock signal to the line buffer; and a data processor configured to determine, when performing a write operation, whether to skip the write operation to the line buffer for each of adjacent data according to whether a value of each of the adjacent data within an image is the same, wherein the data processor is further configured to control the clock gating circuit, such that the clock signal is prevented from being applied to the line buffer while the write operation is skipped and the clock signal is applied to the line buffer while the write operation is performed.
A mask layout for forming a semiconductor device includes an active mask pattern, a gate electrode mask pattern, a silicide blocking mask pattern, and a contact mask pattern. The active mask pattern forms source and drain regions in a substrate. The gate electrode mask pattern, disposed to overlap the active mask pattern, forms a gate electrode between the source region and the drain region. The silicide blocking mask pattern is disposed to overlap the gate electrode mask pattern and the active mask pattern in the gate electrode, the source region, and the drain regions to form a silicide blocking region. The contact mask pattern, disposed spaced apart from the silicide blocking mask pattern, forms a contact plug on the substrate. The silicide blocking mask pattern covers the gate electrode mask pattern and extends to the active mask pattern.
A power factor correction circuit includes an inductor configured to receive an input voltage and supply an output voltage; a power switch connected to the inductor and configured to control an input current flowing through the inductor; and a switch controller configured to receive a feedback voltage including information on the output voltage and an auxiliary voltage including information on a voltage of the inductor and control an on/off operation of the power switch. The switch controller is further configured to operate in a first mode when the feedback voltage is less than a reference voltage, and operate in a second mode when the feedback voltage is greater than the reference voltage.
A source driver for a display panel includes an output buffer configured to output a signal to a data line of the display panel; an output controller configured to control an output of the output buffer; a load resistance measuring unit configured to measure a load resistance of at least one data line of the display panel; and a comparison unit configured to compare the load resistance measured in the load resistance measuring unit with an initial load resistance, wherein the output controller is further configured to control a signal to be output by the output buffer based on the comparison result.
A spread spectrum clock generation device that may reduce electromagnetic interference (EMI) includes: a first comparator configured to compare an input signal with a first reference voltage and output a first comparison signal; a second comparator configured to compare the input signal with a second reference voltage and output a second comparison signal; a latch configured to receive the first and second comparison signals as inputs and output an output signal; and a delaying circuit configured to generate the input signal by delaying the output signal to have a different delay time for each time interval.
H03K 5/00 - Manipulation of pulses not covered by one of the other main groups of this subclass
H03K 5/1252 - Suppression or limitation of noise or interference
H03K 5/133 - Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active-delay devices
A slew rate adjusting circuit includes an adjustment transistor configured to provide an adjustment current into an output port of an arithmetic amplifier, a first transistor connected between a power line of the arithmetic amplifier and the adjustment transistor, and a second transistor connected between the first transistor and an output node of the output port, wherein the adjustment transistor is turned on by the second transistor in response to a difference between an input voltage and an output voltage being equal to or greater than a reference voltage, and the adjustment current is provided to the output port in response to the adjustment transistor being turned on.
A low voltage drop output regulator and a method for controlling thereof for preventing an inrush current that occurs momentarily during an initial operation of a circuit are described. The low voltage drop output regulator includes a differential amplifier configured to output an amplified voltage by comparing a reference voltage with a feedback voltage, a first MOS transistor configured to output an output voltage to a drain terminal by receiving the amplified voltage in a gate terminal, and an inrush preventer connected between a power voltage terminal and a drive node to prevent the inrush current of the first MOS transistor during an initial operation period. The inrush preventer includes a determining unit and a limiter, and the limiter is configured only by a MOS transistor and a switch connected in series between a power voltage terminal and a drive node.
G05F 1/575 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
G05F 1/569 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
21.
Switch control circuit and switch control method thereof
A switch control circuit and switch control method are provided. The switch control circuit and switch control method compensate an error of a load current that occurs because of the changing of a slope of an inductor current based on the increase and decrease of an input voltage. The switch control circuit includes a current compensation device that adjusts a gate on time based on a RC resistor and a control signal that senses a gate terminal of a control switch. The current compensation device compensates an error that occurs due to a signal delay to a gate terminal by increasing or decreasing a reference voltage or a sensing voltage, according to an increase or a decrease of an input voltage.
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
22.
Switch control circuit and switch control method thereof
A switch control circuit and a switch control method are provided. The switch control circuit includes a load, an inductor, a control switch, and a sensing resistance connected in series to an input power source; an integrator that integrates a sensing voltage and a load current setting voltage to generate an integrated signal; a comparator that compares the integrated signal and a bias voltage; a switch driver that controls the control switch based on an output of the comparator and an output of an off time controller; and a gate sensor that outputs, to the integrator, a gate sensing signal that senses a time when an input of a gate terminal of the control switch becomes a low level. An integration operation is started from a position in which the integrated signal is located lower than the bias voltage, when an input of the gate terminal becomes a high level.
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H05B 45/375 - Switched mode power supply [SMPS] using buck topology
H02M 3/00 - Conversion of DC power input into DC power output
23.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor device includes a source region, a drain region, and a gate insulating film formed on a substrate, a gate electrode formed on the gate insulating film, a first insulating film pattern formed to extend from the source region to a part of a top surface of the gate electrode, and a spacer formed on a side surface of the gate electrode in a direction of the drain region.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
A mask layout for forming a semiconductor device includes an active mask pattern, a gate electrode mask pattern, a silicide blocking mask pattern, and a contact mask pattern. The active mask pattern forms source and drain regions in a substrate. The gate electrode mask pattern, disposed to overlap the active mask pattern, forms a gate electrode between the source region and the drain region. The silicide blocking mask pattern is disposed to overlap the gate electrode mask pattern and the active mask pattern in the gate electrode, the source region, and the drain regions to form a silicide blocking region. The contact mask pattern, disposed spaced apart from the silicide blocking mask pattern, forms a contact plug on the substrate. The silicide blocking mask pattern covers the gate electrode mask pattern and extends to the active mask pattern.
A switch control circuit and a switch control method are provided. In this circuit, compositions that sense a drain voltage of a switch device are added in a QR Buck Converter switch control circuit. A first resistor, a second switch, a second resistor are electrically connected to a drain terminal of a switch device to sense the 0 A state of an inductor current. On the basis of a detection result, the switch control circuit turns on the switch device when an inductor current is 0 A, and a drain sensing voltage (ZCD) is less than a predetermined reference voltage (REF).
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H05B 45/375 - Switched mode power supply [SMPS] using buck topology
26.
Method and device for seamless mode transition between command mode and video mode
A method of seamlessly switching over between the command mode and the video mode includes receiving a command for switching over from the command mode to the video mode; generating a sampling value by measuring a time interval between a point in time of an internal synchronization signal used in the command mode and a point in time of an external synchronization signal received in the video mode; generating a parameter for shifting the internal synchronization signal based on the sampling value; shifting the internal synchronization signal to synchronize with the external synchronization signal based on the parameter; and switching over from the command mode to the video mode when the internal synchronization signal of the command mode synchronizes with the external synchronization signal. According to the disclosure, while driving a display.
A method for dynamically handling the failure of the static random-access memory (SRAM) dynamic failure handling system using a cyclic redundancy check (CRC) includes obtaining a write data; determining a write address; storing the write data at the write address of a frame memory which is composed of the SRAM and includes a real address area and a spare address area which are distinguished from each other; storing, in response to the write address, a write cyclic redundancy check (CRC) generated by performing a CRC calculation on the write data; determining a read address; reading a read data from the read address of the frame memory; determining whether, based on the A CRC remainder W_CRC corresponding to the read address and the read data, a CRC error occurs, and generating an error flag when the CRC error occurs; determining a fault address based on the error flag; and mapping the fault address to one of non-fault spare addresses of the spare address area when the fault address is an address of the real address area.
A fault handling apparatus and a fault handling method which perform a built-in self-test (BIST) and a repair on a static random-access memory (SRAM) cell, and the fault handling apparatus and the fault handling method store the fault and repair history information of a previous SRAM test, provide the information to a current test, and reflect both BIST results and the information on the previous test, thereby performing multiple repairs until there is no available spare SRAM.
A semiconductor device includes a source region, a drain region, and a gate insulating film formed on a substrate, a gate electrode formed on the gate insulating film, a first insulating film pattern formed to extend from the source region to a part of a top surface of the gate electrode, and a spacer formed on a side surface of the gate electrode in a direction of the drain region.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
A slew rate acceleration circuit in a buffer circuit, is configured at least to detect a current flowing through a load stage of the buffer circuit, compare a value of the detected current with a reference value, and supply an adjusting driving voltage to an output stage of the buffer circuit based on results of the comparison for increasing a slew rate of the buffer circuit.
A semiconductor chip packaging method includes forming a bump on a wafer, forming a coating film covering the bump, laser grooving the wafer, plasma etching the wafer on which the laser grooving is performed, exposing the bump by removing the coating film covering the bump, fabricating a semiconductor die by performing mechanical sawing of the wafer, and packaging the semiconductor die.
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H10K 71/00 - Manufacture or treatment specially adapted for the organic devices covered by this subclass
A DC-DC converter having a coupling network is provided, in which the coupling network is so configured as to forcibly add a noise source to a feedback output voltage of the DC-DC converter. The coupling network includes one coupling resistor and two coupling capacitors to include the switching voltage of a power switch and inductor output voltage into the output voltage, and transmit the result together with the feedback output voltage to the comparator. Accordingly, it is easier to compare the reference voltage and the feedback voltage, and stably maintain the output voltage of the DC-DC converter operating in constant on-time (COT).
G05F 1/00 - Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
A device for increasing a slew rate of a driving amplifier includes a driving amplifier, a slew rate improvement circuit, and a controller. The driving amplifier is configured to amplify an input voltage and output an output voltage. The slew rate improvement circuit is configured to provide or receive a current to increase the slew rate of the driving amplifier. The controller is configured to control an operation of the slew rate improvement circuit based on a difference between a first code corresponding to the input voltage of the driving amplifier during a current horizontal line time and a second code corresponding to the input voltage during a next horizontal line time.
A semiconductor device includes a source region, a drain region, and a gate dielectric layer formed on a substrate; a gate electrode formed on the gate dielectric layer; a first dielectric pattern, formed contacting a sidewall of the gate electrode, extending from the source region to a portion of an upper surface of the gate electrode; a spacer formed on another sidewall of the gate electrode between the gate electrode and the drain region; and a gate silicide layer formed between the first dielectric pattern and the spacer.
A transmission driver includes a pulse generator and a current mode logic driver. The pulse generator is configured to generate and output a first pulse signal by synchronizing at a falling edge time point of a first input signal, and generate and output a second pulse signal by synchronizing at a falling edge time point of a second input signal. The current mode logic driver is configured to output a pre-emphasis signal to which pre-emphasis technique has been applied by changing a first load resistance value and a second load resistance value based on the first pulse signal and the second pulse signal, respectively.
H03K 3/00 - Circuits for generating electric pulsesMonostable, bistable or multistable circuits
H03K 19/094 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors
H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
A switching control circuit configured to turn on a driving switching element by providing a gate signal to the driving switching element connected in series to an LED includes the switching control circuit configured to divide a PWM dimming signal into a normal PWM dimming section and a low PWM dimming section based on a timing selection signal, provide the gate signal of a first frequency to the driving switching element in the normal PWM dimming section, and provide the gate signal of a second frequency, greater than the first frequency, in the low PWM dimming section.
A current generating circuit includes a current generator configured to supply a reference current, switches connected to the current generator, wherein one switch of the switches is selected and configured to operate, according to a switch selection signal, and one or more resistors, respectively connected to the switches, wherein a rate of current change according to a temperature change of the current generator is adjusted based on a temperature coefficient of resistance (TCR) of resistors connected to the one switch, according to adjustment of the one switch.
A method for forming a semiconductor die, includes forming an interlayer dielectric layer on a substrate having a semiconductor die region, a seal-ring region, and a scribe line region, forming a metal pad and a test pad on the interlayer dielectric layer, forming a passivation dielectric layer on the interlayer dielectric layer, the metal pad, and the test pad, first etching the passivation dielectric layer and the interlayer dielectric layer existing between the seal-ring region and the scribe line region to a predetermined depth using a plasma etching process, second etching the passivation dielectric layer to expose the metal pad and the test pad, forming a bump on the metal pad, and dicing the substrate while removing the scribe line region by mechanical sawing.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/10 - ContainersSeals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
39.
Panel control circuit and display device including panel control circuit
A panel control circuit for controlling a display panel comprising a first data line and a second data line includes a timing controller configured to generate input data comprising a first input data and a second input data, a first driving circuit configured to output a first video signal corresponding to the first input data into the first data line, and a second driving circuit configured to output a second video signal corresponding to the second input data into the second data line, wherein the timing controller is configured to turn off the second driving circuit based on a first deviation, a second deviation, or a third deviation.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
40.
SEMICONDUCTOR DIE FORMING AND PACKAGING METHOD USING ULTRASHORT PULSE LASER MICROMACHINING
A semiconductor die forming method includes preparing a wafer, forming a low-k dielectric layer on the wafer, forming a metal pad on the low-k dielectric layer, forming a passivation layer on the metal pad, patterning the passivation layer, laser grooving the low-k dielectric layer using an ultrashort pulse laser, and cutting the wafer by mechanical sawing to form one or more semiconductor dies.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
41.
Spread spectrum clock generation device and method for operating spread spectrum clock generation device
A device includes a clock delay circuit configured to receive a reference clock signal and generate N delay clock signals, where N is a natural number greater than or equal to 2, by using the reference clock signal, and an output circuit configured to receive the N delay clock signals and output at least a portion of the delay clock signals from among the N delay clock signals as an output signal, wherein a phase delay of a delay clock signal that is output later in time from among the at least the portion of the delay clock signals is greater than or equal to a phase delay of a delay clock signal that is output earlier in time, and wherein a cycle of the output clock signal is longer than or equal to a cycle of the reference clock signal.
A multi-vision display device includes a timing controller, a plurality of display panels, and a plurality of display driver integrated circuits (ICs). The timing controller is configured to receive source data and timing signals from a host, and generate a data packet comprising image data and control data. The plurality of display driver ICs each is connected to any one of the plurality of display panels. The control data includes a panel identifier indicating a number of display panels of the plurality of display panels connected to the display driver IC prior to a corresponding display panel connected to the display driver IC. Adjacent ones of the plurality of display driver ICs are connected to each other, modulate the panel identifier provided from one among the timing controller and a front end display driver IC, and provide the modulated panel identifier to a rear end display driver IC.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
43.
Panel control circuit and display device including the same
A panel control circuit configured to control a display panel includes a plurality of pixels. The panel control circuit includes a controller configured to output an image data and a source driver, including an output circuit and an output control circuit, configured to generate data signals based on the image data. The controller is configured to output an output change signal for changing an output of the source driver. The output circuit is configured to output the data signals to the display panel, and the output control circuit is configured to output an adjusting current to the output circuit in a signal transition section of the output change signal.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
44.
Semiconductor device and manufacturing method of semiconductor device
A semiconductor device includes a source region, a drain region, and a gate insulating film formed on a substrate, a gate electrode formed on the gate insulating film, a first insulating film pattern formed to extend from the source region to a part of a top surface of the gate electrode, and a spacer formed on a side surface of the gate electrode in a direction of the drain region.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
A semiconductor chip packaging method includes forming a bump on a wafer, forming a coating film covering the bump, laser grooving the wafer, plasma etching the wafer on which the laser grooving is performed, exposing the bump by removing the coating film covering the bump, fabricating a semiconductor die by performing mechanical sawing of the wafer, and packaging the semiconductor die.
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
46.
Mask layout, semiconductor device and manufacturing method using the same
A mask layout for forming a semiconductor device includes an active mask pattern, a gate electrode mask pattern, a silicide blocking mask pattern, and a contact mask pattern. The active mask pattern forms source and drain regions in a substrate. The gate electrode mask pattern, disposed to overlap the active mask pattern, forms a gate electrode between the source region and the drain region. The silicide blocking mask pattern is disposed to overlap the gate electrode mask pattern and the active mask pattern in the gate electrode, the source region, and the drain regions to form a silicide blocking region. The contact mask pattern, disposed spaced apart from the silicide blocking mask pattern, forms a contact plug on the substrate. The silicide blocking mask pattern covers the gate electrode mask pattern and extends to the active mask pattern.
An auto trimming device includes an oscillator configured to generate an oscillator clock signal, a subtractor configured to receive an expected value for a target frequency and the oscillator clock signal, configured to output a difference value between the expected value and the oscillator clock signal, an index value selector configured to calculate a unit index value using the difference value and configured to detect and output a target index value from the unit index value, an index value register configured to output an oscillator trimming code corresponding to the target index value to the oscillator, and an embedded memory configured to store the oscillator trimming code as a target oscillator trimming code for the target frequency.
H03L 7/06 - Automatic control of frequency or phaseSynchronisation using a reference signal applied to a frequency- or phase-locked loop
G06F 1/08 - Clock generators with changeable or programmable clock frequency
H03L 7/181 - Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop a numerical count result being used for locking the loop, the counter counting during fixed time intervals
48.
Switching driving circuit and driving method of switching driving circuit
A switching driving circuit includes a switch configured to switch a current supplied to a target circuit, a sensing resistor connected to the switch, a controller configured to control the switch by comparing a sensing voltage applied to the sensing resistor with a reference voltage, and a compensation circuit configured to regulate the reference voltage based on an amount of variation of an input voltage input into the target circuit and an output voltage output from the target circuit.
A low dropout voltage regulator includes a differential amplifier configured to output an amplified voltage by comparing a feedback voltage with a reference voltage, a pass transistor configured to receive a power input voltage into a source terminal, the amplified voltage into a gate terminal, and output an output voltage into a drain terminal, distribution resistors connected between the drain terminal and the ground terminal, configured to generate the feedback voltage, and an inrush preventer, connected in parallel between the differential amplifier and the pass transistor, and configured to output a regulated amplified voltage into the gate terminal according to a control signal, wherein the inrush preventer comprises a determiner configured to output an enable signal that is turned on during an initial driving period, and a limiter configured to output the regulated amplified voltage according to the enable signal.
G05F 1/575 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
G05F 1/569 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
50.
Integration circuit and control method and apparatus
An integration circuit is provided. The integration circuit includes a current source, a capacitor connected in series with the current source, a voltage source bias connected in series with the capacitor, a switch configured to connect a first node between the current source and the capacitor and a second node between the capacitor and the voltage source bias; and a switch control logic unit configured to control an on/off operation of the switch, wherein an integration operation is performed by the current source and the capacitor.
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
A device for driving a display panel includes a display driving integrated circuit (IC) configured to transmit image data to the display panel, a display control IC configured to receive compressed image data from a host and including a timing controller configured to control the display driving IC, and a non-volatile memory configured to transmit data to and receive data from the display control IC, and configured to store driving parameters necessary for operation of the display driving IC.
A gamma correction circuit includes an input circuit configured to sequentially receive gamma control signals used for selecting gamma tap points from a control circuit through a single transmission line, and to output the received gamma control signals, and a voltage generator configured to select the gamma tap points based on the gamma control signals, and to generate gamma voltages according to the gamma tap points.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
53.
Slew rate adjusting circuit for adjusting slew rate, buffer circuit including same, and slew rate adjusting method
A slew rate adjusting circuit includes an adjustment transistor configured to provide an adjustment current into an output port of an arithmetic amplifier, a first transistor connected between a power line of the arithmetic amplifier and the adjustment transistor, and a second transistor connected between the first transistor and an output node of the output port, wherein the adjustment transistor is turned on by the second transistor in response to a difference between an input voltage and an output voltage being equal to or greater than a reference voltage, and the adjustment current is provided to the output port in response to the adjustment transistor being turned on.
A mask layout for forming a semiconductor device includes an active mask pattern, a gate electrode mask pattern, a silicide blocking mask pattern, and a contact mask pattern. The active mask pattern forms source and drain regions in a substrate. The gate electrode mask pattern, disposed to overlap the active mask pattern, forms a gate electrode between the source region and the drain region. The silicide blocking mask pattern is disposed to overlap the gate electrode mask pattern and the active mask pattern in the gate electrode, the source region, and the drain regions to form a silicide blocking region. The contact mask pattern, disposed spaced apart from the silicide blocking mask pattern, forms a contact plug on the substrate. The silicide blocking mask pattern covers the gate electrode mask pattern and extends to the active mask pattern.
A manufacturing and packaging method for a semiconductor die is provided. The method prepares a wafer which has a seal-ring region, forms a first interlayer insulating film on the wafer, forms a metal wiring in the first interlayer insulating film, forms a second interlayer insulating film on the first interlayer insulating film, forms metal pads on the second interlayer insulating film, forms a passivation layer on the metal pads, removes a portion of the passivation layer in a region adjacent to the seal-ring region to expose the second interlayer insulating film, etches a portion of the second interlayer insulating film, forms a bump on the metal pads, removes the first interlayer insulating film and the second interlayer insulating film in the region adjacent to the seal-ring region by a laser grooving process, and dices the wafer into a first semiconductor die and a second semiconductor die.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
56.
Semiconductor package with inner lead pattern group and method for manufacturing the semiconductor package
A semiconductor package includes a first metal interconnection disposed in a semiconductor chip, a first bump group configured to be connected to the first metal interconnection, a first inner lead pattern group configured to be connected to the first bump group, a second metal interconnection disposed in the semiconductor chip, a second bump group configured to be connected to the second metal interconnection; and a second inner lead pattern group configured to be connected to the second bump group, wherein a density of the first metal interconnection is greater than a density of the second metal interconnection, such that a first pitch of the first lead pattern group is greater than a second pitch of the second lead pattern group.
H01L 23/528 - Layout of the interconnection structure
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
57.
Circuit for generating bias current for reading OTP cell and control method thereof
Provided is a circuit for generating a bias current, which includes a current generation unit including a plurality of current mirrors that generate a plurality of currents having different levels. The circuit also includes a current generation control unit that controls the generating the plurality of current having different levels in the current generation unit based on an externally input current. The circuit further includes a current supplying unit that supplies a current selected from the plurality of currents having different levels to an external device.
G11C 17/16 - Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
58.
Semiconductor device and manufacturing method thereof
A semiconductor device manufacturing method includes forming a first trench insulating film of a first depth in a substrate, forming at least one second trench insulating film that is spaced apart from the first trench insulating film and has a second depth that is greater than the first depth, forming a body region of a first conductivity type and a drift region of a second conductivity type in the substrate, forming a gate electrode overlapping the first trench insulating film, forming a source region in the body region and a drain region in the drift region, forming a silicide film on the drain region, and forming a non-silicide film between the first trench insulating film and the drain region, wherein the first trench insulating film overlaps the drift region and the gate electrode.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
A reception apparatus communicating with a transmission apparatus with a clock lane and a data lane. The reception apparatus comprises a clock lane control circuit configured to determine the operation mode of the clock lane based on a clock signal transmitted through the clock lane, and performing an operation based on the determined operation mode of the clock lane, and a data lane control circuit configured to determine the operation mode of the data lane based on a data signal transmitted from the transmission apparatus, and performing an operation based on the determined operation mode of the data lane, and the clock lane control circuit is configured to set the operation mode of the clock lane to a high-speed mode, when the operation mode of the data lane is switched from a low-power mode to the high-speed mode.
H03L 7/07 - Automatic control of frequency or phaseSynchronisation using a reference signal applied to a frequency- or phase-locked loop using several loops, e.g. for redundant clock signal generation
G06F 1/08 - Clock generators with changeable or programmable clock frequency
H03C 3/09 - Modifications of modulator for regulating the mean frequency
A reception device that communicates with a transmission device is provided. The reception device includes a reception circuit configured to receive a clock signal, a first data signal, and a second data signal from the transmission device, a signal synchronization circuit configured to adjust the phases of the first data signal and the second data signal, and generate a first synchronization data signal and a second synchronization data signal, a signal distribution circuit configured to adjust the phase of the clock signal and generate a first distributed clock signal and a second distributed clock signal, and adjust the phases of the first synchronization data signal and the second synchronization data signal and generate a first distributed data signal and a second distributed data signal, and an output circuit configured to process the first distributed data signal and the second distributed data signal.
A display driver IC which adjusts an oscillator frequency is provided. The display driver IC includes: a register map which stores a trim code, a window size, compensation information, and a compensation option; an oscillator which generates an oscillator clock based on the trim code; a timing controller which generates an internal synchronization signal based on the oscillator clock; a DSI block which outputs a first data valid signal which is activated based on a data clock and image data packet update; and a frequency compensating block which compares a periodic value of the oscillator clock calculated based on the data clock and the internal synchronization signal with a target periodic value and generates a compensation trim code obtained by compensating the trim code based on the compensation option, in accordance with the first data valid signal.
A display driver for driving a display panel includes a first driving circuit configured to output a first image signal to a first output pad, and a second driving circuit configured to output a second image signal to a second output pad; and the first driving circuit is further configured to output a reference image signal to the second driving circuit in response to a power down signal, and the second driving circuit is further configured to output the reference image signal output from the first driving circuit to the second output pad in response to the power down signal.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
63.
Display driver IC including oscillator frequency controller
A display driver IC includes a register map, an oscillator, a timing controller, an oscillator scatter, and an intellectual property (IP) block. The register map is configured to store a trim code of a fixed frequency and scatter option information. The oscillator is configured to generate an oscillator clock based on the trim code. The timing controller is configured to generate an internal synchronization signal based on the oscillator clock. The oscillator scatter is configured to output a modified trim code to the oscillator based on the trim code, the scatter option information, and the internal synchronization signal. The intellectual property (IP) block is configured to receive a modified oscillator clock generated in the oscillator based on the modified trim code.
H03L 7/24 - Automatic control of frequency or phaseSynchronisation using a reference signal directly applied to the generator
G09G 5/00 - Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
A decoder of a display apparatus and a decoding method thereof is provided. The decoder comprises a first switching control block configured to select at least two section values from a plurality of gamma gray level values based on predetermined low bits of inputted data, and a second switching control block configured to select section values from the at least two selected section values based on predetermined high bits of the data and output at least two channel values.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
65.
Power switch circuit and method providing power supply to memory device
A power switch circuit comprises a first level shifter configured to turn on a first switching element configured to receive a supply voltage from an external voltage supply pad in response to a program operation of a one-time programmable (OTP) memory cell array, a second level shifter configured to turn on a second switching element and provide the supply voltage to the OTP memory cell array in response to the program operation, a third level shifter configured to turn on a third switching element and provide an internally generated power voltage to the OTP memory cell array in response to a read operation of the OTP memory cell array, and an Electro-Static Discharge (ESD) protection circuit configured to turn off the first switching element in response to a flow of ESD voltage from the voltage supply pad.
G11C 17/18 - Auxiliary circuits, e.g. for writing into memory
G11C 17/16 - Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
A display driving device for driving a display panel includes a first driving circuit configured to output a first image signal, a second driving circuit configured to output a second image signal, a first switch circuit connected to the first driving circuit, and configured to transmit the first image signal to a part of a first set of sub-pixels arranged in the display panel based on a first switching signal during a first horizontal time interval, and a second switch circuit connected to the second driving circuit, and configured to transmit the second image signal to a part of a second set of sub-pixels arranged in the display panel adjacent to the first set of sub-pixels based on a second switching signal during the first horizontal time interval, wherein a width of the first switching signal and a width of the second switching signal in the first horizontal time differ from each other.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
67.
Semiconductor package and method of manufacturing semiconductor package
A semiconductor package manufacturing method includes preparing a flexible film including input wire patterns and output wire patterns, preparing a semiconductor chip including metal bumps, attaching the semiconductor chip to one side of the flexible film, such that the metal bumps are connected to either one or both of the input wire patterns and the output wire patterns, and attaching a first absorbing and shielding tape to another side of the flexible film, wherein the first absorbing and shielding tape includes an absorption film and a protective insulating film disposed on the absorption film.
A control buffer in a source driver includes a first CMOS inverter configured to output a switch signal to control turning on and off of a switch, and a first tri-state inverter that is connected to the first CMOS inverter and configured to selectively adjust a size of the control buffer, wherein a slew rate of the switch signal is adjusted depending on the size of the control buffer.
A driving device of a flat panel display configured to receive an image signal and a clock signal includes a driving circuit configured to convert the image signal into pixel data and output the pixel data, a timing controller configured to generate and output a vertical synchronization signal, a horizontal synchronization signal, a source change enable signal, and a display enable signal using the image signal and the clock signal, an output buffer including an input terminal configured to receive the pixel data and an output terminal connected to the flat panel display, and a buffer controller connected to the timing controller and the output buffer and configured to control a bias current, applied to the output buffer, to be decreased by a value during a period.
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
70.
Light emitting diode (LED) driving circuit with common current sensing resistor and configured to drive LED groups, method of driving the circuit and light apparatus having the same
A light emitting diode (LED) driving circuit that sequentially drive a plurality of series-coupled LED groups comprising at least one LED is provided. The LED driving circuit includes a plurality of mid nodes coupled to terminals of the plurality of the LED groups, a common node with a reference voltage, a switch unit configured to form a plurality of current movement paths between the common node and the plurality of the mid nodes and configured to select a current movement path based on a control signal, a current measuring unit configured to detect a current flow through the common node, and a current control unit configured to generate the control signal based on the detected current flow.
G09G 3/34 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
H05B 45/44 - Details of LED load circuits with an active control inside an LED matrix
71.
Heat releasing semiconductor chip package and method for manufacturing the same
A method for manufacturing a heat releasing semiconductor chip package includes attaching a first surface of a semiconductor chip onto an insulating film, injecting a coating liquid onto a second surface of the semiconductor chip to form a liquefied coating layer and curing the liquefied coating layer to form a heat releasing layer. The coating liquid includes a liquefied molding compound for heat releasing and fine alumina particles. Therefore, the heat releasing semiconductor chip package and method for manufacturing the semiconductor chip package form a heat releasing layer in direct contact with the semiconductor chip to maximize a heat releasing effect.
H01L 23/42 - Fillings or auxiliary members in containers selected or arranged to facilitate heating or cooling
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/373 - Cooling facilitated by selection of materials for the device
H01L 23/433 - Auxiliary members characterised by their shape, e.g. pistons
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
72.
High voltage start-up circuit for zeroing of standby power consumption and switching mode power supply having the same
A high voltage start-up circuit includes a power supply terminal configured to supply power, a latch unit connected to the power supply terminal and comprising a first P-type Metal-Oxide-Semiconductor (PMOS) transistor, a first N-type metal-oxide semiconductor (NMOS) transistor connected to the first PMOS transistor, a second PMOS transistor, and a second NMOS transistor connected to the second PMOS transistor, wherein the transistors form a latch structure, a charge sharing unit comprising a first capacitor configured to supply a first voltage to a drain of the second PMOS transistor and a second capacitor configured to supply a second voltage to a drain of the first PMOS transistor, and a switching unit configured to form a current path that charges an external capacitor using a voltage supplied from the power supply terminal as a power voltage, based on the first voltage and the second voltage.
H02M 1/36 - Means for starting or stopping converters
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
A semiconductor memory device includes a memory cell, a bit line connected to the memory cell, and a sense amplifier. The sense amplifier is connected to the bit line, receives a first control signal, and detects and amplifies a bit line signal of the bit line. The sense amplifier includes a precharge device that is turned on or turned off based on a read control signal, and a transistor output unit that outputs an output voltage based on the bit line signal when the precharge device is turned off.
G11C 16/26 - Sensing or reading circuitsData output circuits
G11C 17/16 - Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
74.
Test socket of flexible semiconductor chip package and bending test method using the same
A test socket of a flexible semiconductor chip package includes a first bending jig having a convex contour, a second bending jig having a concave contour, and a semiconductor chip package. The second bending jig is disposed to matingly engage the first bending jig. The semiconductor chip package is disposed between the first bending jig and the second bending jig, and includes a flexible tape and a semiconductor chip. The semiconductor chip is disposed on a surface of the flexible tape. Each of the first and second bending jigs has a horizontal length longer than a length of the semiconductor chip and less than a length of the flexible tape.
A semiconductor package attached to a curved display panel includes a semiconductor chip, having a top surface and a bottom surface, disposed on a curved flexible film, wherein the curved flexible film is disposed on the curved display panel, a flexible cover layer attached to the top surface of the semiconductor chip, and an underfill material formed between the semiconductor chip and the curved flexible film, and wherein the top surface of the semiconductor chip is planar.
A semiconductor device includes a first transistor, a second transistor, and a third transistor. The first transistor includes a first gate insulator, a first source region and a first drain region, a pair of lightly doped drain (LDD) regions that are each shallower than the first source region and the first drain region, and a first gate electrode. The second transistor includes a second gate insulator, a second source region and a second drain region, a pair of drift regions that encompass the second source region and the second drain region respectively, and a second gate electrode, and the third transistor comprises a third gate insulator, a third source region and a third drain region, and a pair of drift regions that encompass the third source and the third drain regions respectively, and a third gate electrode. The second gate insulator is thinner than the other gate insulators.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
G11C 19/28 - Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
A semiconductor device, includes a first conductive type first doping area, a second conductive type second doping area, a source region, a drain region, a gate insulating film, and a gate electrode. The first conductive type first doping area is formed in a substrate region. The second conductive type second doping area is formed in the substrate to be spaced apart from the first conductive type first doping area. The source region is formed in the first conductive type first doping area. The drain region is formed in the second conductive type second doping area. The gate insulating film is formed between the source region and the drain region. A thickness of a first end of the gate insulating film is different than a thickness of a second end of the gate insulating film. The gate electrode formed on the gate insulating film.
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 21/225 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A source driver apparatus for a display panel includes source drivers and a slew rate controller. Each of the source drivers includes a data latch, a decoder, and an output buffer. The data latch is configured to hold sub-pixel data. The decoder is configured to decode the sub-pixel data held in the data latch to provide a driving signal. The output buffer has an adjustable slew rate and is configured to buffer the driving signal to provide a buffered driving signal. The slew rate controller is configured to analyze the sub-pixel data in the data latch in each of the source drivers and dynamically control the slew rate of the output buffer in each of the source drivers.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/30 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
G09G 3/3275 - Details of drivers for data electrodes
A semiconductor memory device includes a memory cell, a bit line connected to the memory cell, and a sense amplifier. The sense amplifier is connected to the bit line, receives a first control signal, and detects and amplifies a bit line signal of the bit line. The sense amplifier includes a precharge device that is turned on or turned off based on a read control signal, and a transistor output unit that outputs an output voltage based on the bit line signal when the precharge device is turned off.
G11C 11/00 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor
G11C 7/00 - Arrangements for writing information into, or reading information out from, a digital store
G11C 17/18 - Auxiliary circuits, e.g. for writing into memory
G11C 17/16 - Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
A sense amplifier driving device is disclosed. The device includes a cell array, a bias current generation unit connected to the cell array via a bit line, a sense amplifier connected to the cell array via the bit line to detect and amplify a bit line voltage of the bit line, and a latch unit that outputs the detected bit line voltage as an output signal in a read operation of the cell array. The sense amplifier includes a precharge transistor that precharges the bit line based on a first voltage during a programming operation of the cell array, a read voltage convey unit connected to the bit line and operates during a read operation of the cell array, and a sensing unit that outputs an output voltage based on the bit line voltage.
G11C 7/04 - Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
G11C 7/12 - Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
81.
Circuit for generating bias current for reading OTP cell and control method thereof
Provided is a circuit for generating a bias current, which includes a current generation unit including a plurality of current mirrors that generate a plurality of currents having different levels. The circuit also includes a current generation control unit that controls the generating the plurality of current having different levels in the current generation unit based on an externally input current. The circuit further includes a current supplying unit that supplies a current selected from the plurality of currents having different levels to an external device.
G11C 17/16 - Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
82.
One time programmable (OTP) cell having improved programming reliability
A non-volatile semiconductor storage device includes a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film, and first and second spaced apart doped regions formed below the gate insulating film and the gate electrode in the semiconductor substrate, wherein a grounded region of the first and second spaced apart doped regions is grounded via a contact.
G11C 17/16 - Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
G11C 17/18 - Auxiliary circuits, e.g. for writing into memory
Provided is a power switch circuit that includes a first level shifter that, in response to execution of a programming operation of a one-time programmable (OTP) memory cell array, turns on a first switching device that has received a supply voltage from an external supply voltage pad. The power switch circuit also include a second level shifter that, in response to execution of the programming operation, turns on a second switching device connected to the first switching device, to provide the supply voltage to the OTP memory cell array. The power switch circuit further includes a third level shifter that, in response to execution of a read operation of the OTP memory cell array, turns on a third switching device to provide a power voltage, which is internally generated within the power switch circuit, to the OTP memory cell array.
G11C 17/18 - Auxiliary circuits, e.g. for writing into memory
G11C 17/16 - Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
An OTP memory device includes an OTP memory cell array including OTP memory cells driven by an external supply voltage, the OTP memory cells comprising bit lines arrayed in rows and columns; data input circuits respectively connected to the rows of the OTP memory cells and configured to select a row of the OTP memory cells to which the supply voltage is to be applied; a column decoder connected to each column of the OTP memory cells and configured to select columns of the OTP memory cells to which the supply voltage is to be applied; and a detection amplifier connected to the bit line and configured to perform a read operation of the OTP memory cells.
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
G11C 17/16 - Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
Provided is a one-time programmable (OTP) memory device, which includes a data input circuit that receives a supply voltage and applies the supply voltage to one of a plurality of bit lines that is selected by a write switch, and an OTP memory cell array including a plurality of OTP memory cells arranged in a plurality of rows and columns. The OTP memory cells on the same row connected to the same bit line. The OTP memory device also includes a column decoder that selects one of the plurality of columns of the OTP memory cells to apply the supply voltage thereto, and a detection amplifier that performs a read operation of the OTP memory cells connected to one of the plurality of bit lines that is selected by a read switch.
G11C 17/00 - Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards
G11C 17/18 - Auxiliary circuits, e.g. for writing into memory
G11C 17/16 - Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
86.
Semiconductor device for display driver IC structure
A semiconductor device includes a first transistor, a second transistor, and a third transistor. The first transistor includes a first gate insulator, a first source region and a first drain region, a pair of lightly doped drain (LDD) regions that are each shallower than the first source region and the first drain region, and a first gate electrode. The second transistor includes a second gate insulator, a second source region and a second drain region, a pair of drift regions that encompass the second source region and the second drain region respectively, and a second gate electrode, and the third transistor comprises a third gate insulator, a third source region and a third drain region, and a pair of drift regions that encompass the third source and the third drain regions respectively, and a third gate electrode. The second gate insulator is thinner than the other gate insulators.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
G11C 19/28 - Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
An anti-fuse device includes a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film, and a salicide layer formed on a first portion of the gate electrode such that a second portion of the gate electrode omits the salicide layer, wherein a hard breakdown of at least a portion of the gate insulating film at a time of programming the anti-fuse device.
G11C 17/00 - Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards
G11C 17/16 - Read-only memories programmable only onceSemi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
An apparatus to drive a multi-channel light emitting diode (LED) array includes switching transistors connected to LED strings of the multi-channel LED array, error amplifiers connected to the switching transistors, each of the error amplifiers being configured to control current flowing through the LED string to have a target magnitude, and overheating protection circuits connected to the switching transistors, each of the overheating protection circuits being configured to regulate current flowing through a respective switching transistor to have a magnitude less than or equal to the target magnitude.
A column driver of a display device provides a high slew rate with lowered power requirements by using external switches connected to upper and bottom output buffers. The upper output buffer is driven between a first voltage rail and a second voltage rail, and outputs a first output signal in response to a first input signal and a second input signal. The bottom output buffer is driven between the second voltage rail and a third voltage rail, and outputs a second output signal in response to a third input signal and a fourth input signal. A first switch group selectively provides input for the upper output buffer and the bottom output buffer. A second switch group feeds back the first and the second output signals to the first or the second input terminal of each of the upper output buffer and the bottom output buffer.
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
90.
Semiconductor device and method for manufacturing the same
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a well region, a drain region and a source region disposed in the well region, a gate electrode disposed above the well region, a thin gate insulating layer and a thick gate insulating layer disposed under the gate electrode, the thick gate insulating layer being disclosed closer to the drain region than the thin gate insulating layer, and an extended drain junction region disposed below the gate electrode.
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
There is provided a CMOS inverter circuit device. The CMOS inverter circuit device includes a delay circuit unit configured to generate different charge and discharge paths of each gate node of a PMOS transistor and an NMOS transistor respectively at the time that an input signal transitions between high and low levels. Therefore, the present examples minimize or erase generation of a short circuit current made at the time that the input signal transition. The examples may simplify circuit architecture, and may make a magnitude of a CMOS inverter circuit device smaller.
H03K 3/00 - Circuits for generating electric pulsesMonostable, bistable or multistable circuits
H03K 19/00 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits
H03K 19/003 - Modifications for increasing the reliability
H03K 19/0948 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET using CMOS
92.
Circuit and method for detecting tampering or preventing forgery of semiconductor chip
A circuit for preventing forgery of semiconductor chip includes a driving signal protection unit and a control unit. The driving signal protection unit configured to include at least one protection wire protecting a driving wire having driving signals flow therethrough. The control unit configured to generate a first security code and a second security code. The control unit is further configured to compare the first security code that passes through the driving signal protection unit and the second security code that bypasses the driving signal protection unit to detect tampering at the at least one protection wire, and to control operation of the semiconductor chip.
G06F 21/82 - Protecting input, output or interconnection devices
H01L 23/00 - Details of semiconductor or other solid state devices
G06F 21/75 - Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure computing or processing of information by inhibiting the analysis of circuitry or operation, e.g. to counteract reverse engineering
Provided is a power consumption reduction type power converter. For example, such a power converter includes a regulator configured to convert a power voltage into an operation power of a main integrated circuit (IC), a mode detecting pin configured to detect a voltage level of the operation power, wherein the detected voltage level indicates a disable mode or an enable mode, a mode signal output circuit connected to the mode detecting pin, configured to output a mode converting signal, and a switching controller configured to block or connect a power route according to the mode converting signal to supply or block the operation power from being provided to the main IC, wherein the mode detecting pin is connected to a first switch and a first capacitor to perform a charging or a discharging operation of the first capacitor according to a switching operation of the first switch.
H02M 1/36 - Means for starting or stopping converters
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
A leakage current detection circuit includes a driving voltage detection unit that detects a cut-off point of a driving voltage regulated through a driving voltage switch, a leakage current detection unit that detects a leakage current of the driving voltage switch after cutting off of the driving voltage, generates a leakage detection signal when a driving voltage related to the leakage current exceeds a reference detection voltage and a driving voltage control unit that turns off the driving voltage switch at a cut-off point of the driving voltage to cut off the driving voltage and maintain the driving voltage switch in an off state when the leakage detection signal is received. The leakage current detection circuit detects a leakage current passing through the driving voltage switch when abnormal operation of a light emitting diode light apparatus occurs, and keeps the driving voltage switch in an off state during cutoff periods to prevent burning of the drive voltage switch.
H02H 3/16 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to fault current to earth, frame or mass
H05B 33/08 - Circuit arrangements for operating electroluminescent light sources
95.
Gate off delay compensation circuit and light apparatus having the same
The present examples relate to a power factor correction device, a power factor correction method, and a corresponding converter, in which when an input signal inputted into the converter is changed, a reference signal is also changed to fit to the input signal in consideration of only the frequency and the phase of the input signal. Thus, even without a specifically designated control circuit, examples make it possible to improve power factor correction and Total Harmonic Distortion (THD) and to reduce the size of a semiconductor chip, and examples are potentially used for a device receiving waveforms other than a sine wave.
A power factor correction controlling circuit includes a control signal providing circuit configured to provide a control signal associated with a feedback signal, the feedback signal being controlled based on a bias signal, a pulse width modulation signal controlling circuit configured to control a pulse width modulation signal based on one of first and second bias signals and a power factor controlling circuit configured to provide a power factor control signal when an amplitude of the pulse width modulation signal reaches that of the power factor control signal. Such a circuit Is able to operate stably, regardless of a load condition and an input voltage condition.
A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a P type well region and an N type well region formed in a substrate, a gate insulating layer having a non-uniform thickness and formed on the P type well region and the N type well region, a gate electrode formed on the gate insulating layer, a P type well pick-up region formed in the P type well region, and a field relief oxide layer formed in the N type well region between the gate electrode and the drain region.
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
99.
Apparatus and method for preventing image display defects in a display device
An apparatus and a method that quickly detect an error that may occur due to an external noise occurrence during display of image data on a screen of an image display device, and that control a strobe signal output to prevent a screen defect from being displayed on the display device screen.
A light emitting diode (LED) driving circuit includes a flicker elimination unit configured to perform a flicker removal for LED modules and a driving control unit configured to pause a procedure of the flicker removal based on an AC input voltage that is regulated through a Triode for Alternating Current (TRIAC) dimmer, so as to cause a brightness of the LED modules to be dimmed. Therefore, the LED driving circuit selectively adjusts an LED brightness level and removes LED flicker by using a TRIAC dimmer and controls the brightness level of the LED module based on a dimming level.
patents