A method of forming an electrode with multi-dielectric layers includes: forming a metal pattern on a substrate, in which the metal pattern includes a first metal film on the substrate and a second metal film on a top surface of the first metal film, and the first and second metal films have different metal compositions; and anodizing the metal pattern in a liquid electrolyte to form a covering anodized portion which covers an unanodized portion, in which the covering anodized portion includes a sidewall oxide dielectric structure and a top oxide dielectric structure, the sidewall oxide dielectric structure is in contact with a side surface of the unanodized portion, the top oxide dielectric structure is in contact with top surfaces of the unanodized portion and the sidewall oxide dielectric structure, and the sidewall and top oxide dielectric structures have different effective permittivities.
A method of manufacturing an electrode structure includes: etching the bottom metal layer through a first patterned photoresist including first and second mask portions to form a first metal pattern, a second metal pattern, and a bridge connected therebetween; removing the first mask portion; anodizing the bottom metal layer with the remained second mask portion by flowing an anodizing current from the first metal pattern; removing the remained second mask portion; depositing a conductive layer on the bottom metal layer to be in contact with an area of the second metal pattern that is unanodized; etching the conductive layer through a second patterned photoresist until an open segment of the bridge is exposed; and etching the open segment of the bridge through the second patterned photoresist until the bridge is electrically opened.
A method of manufacturing an interconnection structure includes: forming a first patterned photoresist on a bottom metal layer; etching the bottom metal layer to form first and second lower metal patterns; partially anodizing the etched bottom metal layer; removing the first patterned photoresist to expose a surface portion of the second lower metal pattern that is unanodized; depositing a conductive layer on the anodized bottom metal layer to be in contact with the surface portion; and etching the conductive layer through a second patterned photoresist to form a first upper conductive pattern that is above and electrically isolated from the first lower metal pattern and a second upper conductive pattern that is above the second lower metal pattern and in contact with the surface portion, in which the first and second upper conductive patterns entirely cover all non-insulated top surface of the anodized bottom metal layer.
A method of manufacturing a structure having an electrode and an anodized part includes: forming a top metal layer on a substrate; forming a top patterned photoresist on the top metal layer to expose a portion of a top surface of the top metal layer, in which the top patterned photoresist has a first mask portion and a second mask portion thicker than the first mask portion; anodizing the top metal layer through the top patterned photoresist to form an anodized segment; removing the first mask portion after the anodizing; and etching the top metal layer through the top patterned photoresist after the removing the first mask portion to form a top metal pattern.
A structure having multi-dielectric layers includes a conduction channel, a sidewall oxide dielectric structure, and a top oxide dielectric structure. The conduction channel contains aluminum. The sidewall oxide dielectric structure is in contact with a side surface of the conduction channel and has a first effective permittivity. The top oxide dielectric structure is in contact with a top surface of the conduction channel and a top surface of the sidewall oxide dielectric structure and has a second effective permittivity. The second effective permittivity is greater than the first effective permittivity.
A method of manufacturing a structure having anodized parts includes: forming a bottom metal pattern with a dielectric layer thereon on a substrate, in which the dielectric layer has an opening exposing the bottom metal pattern; forming a semiconductor layer to cover the dielectric layer; forming a first metal layer on the semiconductor layer; forming a second metal layer on the first metal layer; forming a mask layer on the second metal layer to expose a portion of a top surface of the second metal layer; etching the second metal layer through the mask layer until a top surface of the first metal layer is exposed, in which an etch selectivity of the second metal layer and the first metal layer is greater than 2.0; anodizing the first metal layer through the mask layer to form an anodized segment; and removing the mask layer.
A method of manufacturing a structure having anodized parts includes: forming a bottom metal layer on a substrate; forming a top metal layer on the bottom metal layer; forming a mask layer on the top metal layer to expose a portion of a top surface of the top metal layer; etching the top metal layer through the mask layer until a top surface of the bottom metal layer is exposed, wherein an etch selectivity of the top metal layer and the bottom metal layer is greater than 2.0; anodizing the bottom metal layer through the mask layer to form an anodized segment; and removing the mask layer after the anodizing.
A structure having multi-dielectric layers includes a conduction channel, a sidewall oxide dielectric structure, and a top oxide dielectric structure. The conduction channel contains aluminum. The sidewall oxide dielectric structure is in contact with a side surface of the conduction channel and has a first effective permittivity. The top oxide dielectric structure is in contact with a top surface of the conduction channel and a top surface of the sidewall oxide dielectric structure and has a second effective permittivity. A material of the top oxide dielectric structure includes silicon. The first effective permittivity is greater than the second effective permittivity.
A method of manufacturing a structure having multi metal layers includes: depositing a top metal layer on a bottom metal layer; forming a patterned photoresist on the top metal layer; etching the top and bottom metal layers through first hollow portions of the patterned photoresist to respectively form a top metal pattern and a bottom metal pattern; forming a second hollow portion in the patterned photoresist to expose a portion of the top metal pattern; etching the top metal pattern through the second hollow portion until a top surface portion of the bottom metal pattern is exposed by the etched top metal pattern, in which an etch selectivity of the top and bottom metal layers in the etching the top metal pattern is greater than 1.0; and anodizing the top surface portion to form an anodized segment of the bottom metal layer.
A method of manufacturing a thin-film transistor TFT with a metal cross over structure includes: etching the first metal layer through a first patterned photoresist to form a gate electrode and a lower metal pattern; anodizing the first metal layer; removing the first patterned photoresist; depositing a semiconductor layer on the etched first metal layer; depositing a second metal layer on the semiconductor layer; anodizing the second metal layer through a second patterned photoresist to form an anodized segment; and etching the second metal layer through the second patterned photoresist to form first and second upper metal patterns, in which the first upper metal pattern has drain and source electrodes connected to the anodized segment and electrically isolated from each other by the anodized segment, and the second upper metal pattern forms a metal cross over structure with the lower metal pattern.
A method of manufacturing a structure having an electrode and an anodized part includes: forming a top metal layer on a substrate; forming a top patterned photoresist on the top metal layer to expose a portion of a top surface of the top metal layer, in which the top patterned photoresist has a first mask portion and a second mask portion thicker than the first mask portion; anodizing the top metal layer through the top patterned photoresist to form an anodized segment; removing the first mask portion after the anodizing; etching the top metal layer through the top patterned photoresist after the removing the first mask portion to form a top metal pattern; and reflowing the top patterned photoresist after the anodizing and before the etching.
A micro light-emitting diode device includes a substrate, a micro light-emitting diode, an isolation layer, and a cathode transparent electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type III-nitride layer, n-type Ill-nitride layers with a layer number of m sequentially stacked above the p-type III-nitride layer, and an active layer between the p-type Ill-nitride layer and the n-type III-nitride layers. m is an integer greater than two. A top layer and a next layer in contact with each other of the n-type III-nitride layers contain aluminum. The isolation layer is on the substrate and surrounds the micro light-emitting diode. The cathode transparent electrode is at least partially in contact with a top surface of the top layer. A refractive index of the top layer is smaller than a refractive index of the next layer.
A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a cathode transparent electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type III-nitride layer, a first n-type III-nitride layer above the p-type III-nitride layer, a second n-type III-nitride layer above the first n-type III-nitride layer, and an active layer between the p-type and first n-type III-nitride layers. The second n-type III-nitride layer contains aluminum and has top and bottom surfaces. A refractive index of the second n-type III-nitride layer is smaller than a refractive index of the first n-type III-nitride layer and varies in a monotonically non-decreasing manner from the top surface. The refractive index of the second n-type III-nitride layer is larger at the bottom surface than at the top surface. The cathode transparent electrode is in contact with the top surface.
A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a transparent top electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type GaN layer, an n-type III-nitride layer above the p-type GaN layer, an n-doped AlxGayIn(1-x-y)N layer above and in contact with the n-type III-nitride layer, and an active layer between the p-type GaN layer and the n-type III-nitride layer. x is equal to or greater than about 0.02. The transparent top electrode covers and is in contact with the n-doped AlxGayIn(1-x-y)N layer. A refractive index of the n-doped AlxGayIn(1-x-y)N layer is smaller than a refractive index of the n-type III-nitride layer. A sum of the thicknesses of the n-type III-nitride layer and the n-doped AlxGayIn(1-x-y)N layer is greater than a sum of the thicknesses of the active layer and the p-type GaN layer.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
A method of manufacturing micro devices includes: preparing a III-nitride epitaxial structure including a p-type III-nitride layer, an n-type III-nitride layer on the p-type III-nitride layer, a AlxIII_others1-xN layer on the n-type III-nitride layer, and an undoped III-nitride layer on the AlxIII_others1-xN layer; forming a photoresist layer on the III-nitride epitaxial structure to contact the undoped III-nitride layer; patterning the photoresist layer; performing a first plasma etching process to the III-nitride epitaxial structure through the patterned photoresist layer to form a trench in the etched III-nitride epitaxial structure, in which the trench extends from the etched photoresist layer at least to the AlxIII_others1-xN layer; and performing a second plasma etching process to the etched III-nitride epitaxial structure until the etched III-nitride epitaxial structure is cut into a plurality of micro devices and a top surface of the etched AlxIII_others1-xN layer is exposed.
A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a transparent top electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type GaN layer, an n-type III-nitride layer above the p-type GaN layer, an n-doped AIN layer above and in contact with the n-type III-nitride layer, and an active layer between the p-type GaN layer and the n-type III-nitride layer. The transparent top electrode covers and is in contact with the n-doped AIN layer. A refractive index of the n-doped AIN layer is smaller than a refractive index of the n-type III-nitride layer. A sum of the thicknesses of the n-type III-nitride layer and the n-doped AIN layer is greater than a sum of the thicknesses of the active layer and the p-type GaN layer.
H10H 20/855 - Optical field-shaping means, e.g. lenses
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a transparent top electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type GaN layer, an n-type GaN layer above the p-type GaN layer, an n-doped AlxGa(1−x)N layer above and in contact with the n-type GaN layer, and an active layer between the p-type GaN layer and the n-type GaN layer. x is equal to or greater than 0.02 and smaller than 1. The transparent top electrode covers and is in contact with the n-doped AlxGa(1−x)N layer. A refractive index of the n-doped AlxGa(1−x)N layer is smaller than a refractive index of the n-type GaN layer. A sum of the thicknesses of the n-type GaN layer and the n-doped AlxGa(1−x)N layer is greater than a sum of the thicknesses of the active layer and the p-type GaN layer.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
A method of manufacturing micro devices includes: preparing a GaN-based epitaxial structure including a p-type GaN layer, a n-type GaN layer on the p-type GaN layer, and an undoped GaN layer on the n-type GaN layer; forming a photoresist layer on the GaN-based epitaxial structure with the undoped GaN layer contacting the photoresist layer; patterning the photoresist layer; performing a plasma etching process to the GaN-based epitaxial structure through the patterned photoresist layer until the patterned photoresist layer is completely removed, such that a plurality of mesas are formed on the etched GaN-based epitaxial structure, in which a height of the mesas is at least 1.0 μm; and continuing to perform the plasma etching process until the undoped GaN layer is completely removed and the etched GaN-based epitaxial structure is cut into a plurality of micro devices.
A micro light-emitting diode device structure including a substrate, a micro light-emitting diode, an isolation layer, and a top electrode is provided. A height of a contact periphery between the micro light-emitting diode and a concave surface of the isolation layer is greater than a height of a flat surface of the isolation layer and is smaller than a height of the micro light-emitting diode. A height of the isolation layer decreases from the height of the contact periphery to the height of the flat surface in a direction away from the micro light-emitting diode. In a cross-section, an included angle between the flat surface and a virtual straight line connecting the contact periphery and a turning periphery is greater than 120 degrees. The turning periphery is a boundary between the concave surface and the flat surface.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
21.
Method for replacing or patching element of display device
A method for replacing an element of a display device includes: forming a structure with a first liquid layer between a first micro device and a conductive pad of a substrate in which the first micro device is gripped by a sticking force produced by the first liquid layer; evaporating the first liquid layer such that the first micro device is bound to the substrate; determining if the first micro device is malfunctioned or misplaced; removing the first micro device when the first micro device is malfunctioned or misplaced; forming another structure with a second liquid layer between a second micro device and the conductive pad of the substrate in which the second micro device is gripped by a sticking force produced by the second liquid layer; and evaporating the second liquid layer such that the second micro device is bound to the substrate.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A micro light emitting diode display includes a substrate, an electrode layer disposed on the substrate, a micro light emitting diode device disposed on the electrode layer, a metal layer disposed on the substrate and connected to the electrode layer, and first and second encapsulation layers. The substrate has an air passage extending to opposite surfaces thereof. The first encapsulation layer wraps the micro light emitting diode device. The second encapsulation layer covers the metal layer and has a material different from that of the first encapsulation layer. The metal layer has a visible area in a display region of the substrate that is not covered by the micro light emitting diode device. A part of the visible area is covered by the second encapsulation layer, and a proportion of the part to the visible area is equal to or greater than 60%.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G06F 1/16 - Constructional details or arrangements
24.
Breathable and waterproof micro light emitting diode display
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/54 - Encapsulations having a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G06F 1/16 - Constructional details or arrangements
A method of handling a micro device is provided. The method includes: holding the micro device by a transfer head; forming a liquid layer between the micro device and a substrate; maintaining a first temperature of the transfer head to be lower than an environmental temperature; maintaining a second temperature of the substrate to be lower than the environmental temperature; and binding the micro device to the substrate by the liquid layer.
A device with a light-emitting diode includes a substrate, a first conductive pad and a second conductive pad, a light-emitting diode, a metal protrusion, a polymer layer, and a top electrode. The substrate has a top surface. The first conductive pad and the second conductive pad are on the substrate. The light-emitting diode is on the first conductive pad. The metal protrusion is on the second conductive pad. The polymer layer covers the top surface of the substrate, the first conductive pad, the second conductive pad, the metal protrusion, and the light-emitting diode, in which a distance from a top of the metal protrusion to the top surface of the substrate is greater than a thickness of the polymer layer. The top electrode covers the light-emitting diode, the polymer layer, and the metal protrusion such that the light-emitting diode is electrically connected with the second conductive pad.
A method of transferring a plurality of micro devices is provided. The method includes: arranging the micro devices on a carrier substrate in a hexagonal manner; arranging a plurality of pick-up portions of a transfer head in a rectangular manner; and picking up the micro devices from the carrier substrate by the pick-up portions.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A micro light-emitting diode transparent display including a transparent substrate is provided. N pixels are defined on the transparent substrate. N sets of micro light-emitting diodes are on the transparent substrate and respectively located in the N pixels. A wall portion is on the transparent substrate and surrounding one of the N sets of the micro light-emitting diodes to form an enclosed region on the transparent substrate. A length of a periphery of the enclosed region is equal to or smaller than 85% of a length of an outer periphery of one of the N pixels in which said one of the N sets of the micro light-emitting diodes is located. An area of said one of the N pixels outside the enclosed region allows light to directly pass through the micro light-emitting diode transparent display.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
A method of transferring a micro device is provided. The method includes: aligning a transfer plate with the micro device thereon with a receiving substrate having a contact pad thereon such that the micro device is above or in contact with the contact pad; moving a combination of the transfer plate with the micro device thereon and the receiving substrate into a confined space with a relative humidity greater than or equal to about 85% so as to condense some water between the micro device and the contact pad; and attaching the micro device to the contact pad.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A direct coupling fiber-device structure including an optical fiber and a micro device is provided. The optical fiber has a first end, a second end opposite to the first end, and an inner cavity recessed from the first end. The micro device is in the inner cavity. The micro device has a first surface and a second surface. The first surface is substantially facing away from the first end. The second surface is opposite to the first surface and facing toward the first end.
A method of liquid assisted bonding includes: forming a structure with a liquid layer between an electrode of a device and a contact pad of a substrate, and two opposite surfaces of the liquid layer being respectively in contact with the electrode and the contact pad in which hydrogen bonds are formed between the liquid layer and at least one of the electrode and the contact pad; and evaporating the liquid layer to break said hydrogen bonds such that at least one of a surface of the electrode facing the contact pad and a surface of the contact pad facing the electrode is activated so as to assist a formation of a diffusion bonding between the electrode of the device and the contact pad in which a contact area between the electrode and the contact pad is smaller than or equal to about 1 square millimeter.
A method of transferring micro devices includes: aligning a detachable transfer plate by an alignment assistive mechanism; picking up the micro devices and detaching the detachable transfer plate from the alignment assistive mechanism; placing the detachable transfer plate with the micro devices thereon into a transfer head stocker capable of storing multiple detachable transfer plates; moving the transfer head stocker to a place near an another alignment assistive mechanism; disassembling the detachable transfer plate with the micro devices thereon from the transfer head stocker; moving the detachable transfer plate with the micro devices thereon to be assembled to another alignment assistive mechanism above a receiving substrate to form a device transfer assembly; aligning the micro devices on the detachable transfer plate with the receiving substrate; and transferring the micro devices to the receiving substrate by the another alignment assistive mechanism through the detachable transfer plate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
34.
Method of forming conductive area at top surface of light-emitting diode
A method of forming a conductive area at a top surface of a light-emitting diode includes: preparing a substrate having a top surface with a conductive pad thereon; bonding a light-emitting diode having first and second type semiconductor layers and an active layer to the conductive pad; forming a polymer layer on the substrate such that a difference between a distance from a first surface of the polymer layer to the top surface of the substrate and a distance from a second surface of the polymer layer to a top surface of the light-emitting diode is greater than a distance from an interface between a second type semiconductor layer and an active layer to the top surface of the substrate; and etching the polymer layer till the second type semiconductor layer to expose the top surface of the light-emitting diode from the polymer layer.
A micro light-emitting diode display including a column of first/second micro light-emitting diodes and a first/second/third/fourth type column data line is provided. The first type column data line is configured to provide first data voltages to some of the first micro light-emitting diodes. The second type column data line is configured to provide second data voltages to a remaining of the first micro light-emitting diodes. The second type column data line is not crossed over by other data lines. The third type column data line is configured to provide third data voltages to some of the second micro light-emitting diodes. The third type column data line is not crossed over by other data lines. The fourth type column data line is configured to provide fourth data voltages to a remaining of the second micro light-emitting diodes.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
36.
Method for rapidly gathering sub-threshold swing from thin film transistor
A method for rapidly gathering a sub-threshold swing from a thin film transistor is provided. The method includes: electrically connecting an operational amplifier and an anti-exponential component to a source terminal of the thin film transistor; performing a measuring process to the thin film transistor in which the measuring process is inputting multiple values of a gate voltage to a gate terminal, such that multiple values of an output voltage are correspondingly generated from the output terminal of the operational amplifier; and performing a fitting process to the output voltage corresponding to the thin film transistor in which the fitting process is fitting at least two of said multiple values of the output voltage to get the sub-threshold swing.
An electrical binding structure is provided, which includes a substrate, a contact pad set, and a combination of a micro device and an electrode. The contact pad set is on the substrate in which the contact pad set includes at least one contact pad, and the at least one contact pad is conductive. The combination is on the contact pad set. Opposite sides of the electrode are respectively in contact with the micro device and the contact pad set in which at least the contact pad set and the electrode define at least one volume space. A vertical projection of the at least one volume space on the substrate is overlapped with a vertical projection of one of the contact pad set and the electrode on the substrate, and is enclosed by a vertical projection of an outer periphery of the micro device on the substrate.
A method for transferring a micro device is provided. The method includes: forming a liquid layer on the micro device attached on a transfer plate; placing the micro device over a receiving substrate such that the liquid layer is between the micro device and a contact pad of the receiving substrate and contacts the contact pad; and evaporating the liquid layer such that the micro device is bound to and in contact with the contact pad.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/482 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of lead-in layers inseparably applied to the semiconductor body
A method of liquid assisted binding is provided. The method includes: forming a conductive pad on the substrate; placing a micro device on the conductive pad, such that the micro device is in contact with the conductive pad in which the micro device comprises an electrode facing the conductive pad; forming a liquid layer on the micro device and the substrate after said placing, such that a part of the liquid layer penetrates between the micro device and the conductive pad, and the micro device is gripped by a capillary force produced by said part of the liquid layer; and evaporating the liquid layer such that the electrode is bound to the conductive pad and is in electrical connection with the conductive pad.
H05K 3/30 - Assembling printed circuits with electric components, e.g. with resistor
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H05K 1/09 - Use of materials for the metallic pattern
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
40.
Method of restricting micro device on conductive pad
A method of restricting a micro device on a conductive pad is provided. The method includes: forming the conductive pad having a first lateral length on a substrate; forming a liquid layer on the conductive pad; and placing the micro device having a second lateral length over the conductive pad such that the micro device is in contact with the liquid layer and is gripped by a capillary force produced by the liquid layer between the micro device and the conductive pad, the micro device comprising an electrode facing the conductive pad, wherein the first lateral length is less than or equal to twice of the second lateral length.
H05K 3/30 - Assembling printed circuits with electric components, e.g. with resistor
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/00 - Details of semiconductor or other solid state devices
41.
Method of transferring different types of micro devices
A method of transferring different types of micro devices is provided. The method includes: assembling a first detachable transfer plate with first type micro devices thereon to an alignment assistive mechanism which is substantially above a receiving substrate, wherein the first type micro devices face the receiving substrate; aligning the first type micro devices on the first detachable transfer plate with positions of first sub-pixels respectively of pixels on the receiving substrate by the alignment assistive mechanism; transferring the first type micro devices to the first sub-pixels on the receiving substrate; replacing the first detachable transfer plate with a second detachable transfer plate with second type micro devices thereon, wherein the second type micro devices face the receiving substrate; and transferring the second type micro devices to second sub-pixels respectively of the pixels on the receiving substrate.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
A pixel encapsulating structure including a substrate, a first light-emitting device, a second light-emitting device, and a filling material is provided. The first light-emitting device is on the substrate. The second light-emitting device is on the substrate. The first light-emitting device and the second light-emitting device have different emission wavelengths. The filling material is on the substrate, the first light-emitting device, and the second light-emitting device. The filling material has two portions respectively covering the first light-emitting device and the second light-emitting device, and said two portions have different refractive indices.
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 21/66 - Testing or measuring during manufacture or treatment
H04B 10/00 - Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
A light-emitting device driving circuit including a light emitting device, a delivery capacitor, a driving transistor, a reset circuit, a compensation circuit, and a data circuit is provided. The delivery capacitor is electrically connected to a low-level voltage. The driving transistor is configured to drive the light-emitting device according to a driving voltage received from a driving voltage line higher than that of the low-level voltage. The reset circuit is configured to determine whether to electrically connect the light-emitting device to the first node. The compensation is configured to receive a reference voltage higher than the low-level voltage to control a gate voltage of the driving transistor through a second node. The data circuit is configured to receive a data voltage to determine whether to electrically connect the data voltage to the compensation circuit and whether to electrically connect the data voltage to the delivery capacitor.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
A method for transferring a micro device is provided. The method includes: preparing a transfer plate with the micro device thereon in which the micro device is in contact with a picked-up surface of the transfer plate; forming a structure including the micro device, a contact pad of a receiving substrate, and some water therebetween in which two opposite surfaces of the water are respectively in contact with the micro device and a bound surface of the contact pad, and a hydrophilicity of the bound surface of the contact pad facing the transfer plate is greater than a hydrophilicity of the picked-up surface of the transfer plate facing the receiving substrate; and evaporating the water such that the micro device is bound to and in contact with the contact pad.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A pixel encapsulating structure including a substrate, three light-emitting devices, a filling material, and a first encapsulation layer is provided. The three light-emitting devices are present on the substrate. Two of the three light-emitting devices have different emission wavelengths. The filling material is present on the substrate and the three light-emitting devices. The first encapsulation layer is present on the filling material and covers the three light-emitting devices. One of the first encapsulation layer and the filling material has three portions respectively covering the three light-emitting devices, and two of the three portions have different refractive indices.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
A light-emitting device display comprising a first light-emitting device and a second light emitting device is provided. The first light-emitting device and the second light-emitting device have a first forward voltage and a second forward voltage respectively, and the second forward voltage is higher than the first forward voltage. A first scan voltage and a second scan voltage is respectively provided to the first light-emitting device and the second light-emitting device. The first scan voltage is switched between a first scan-on voltage and a first scan-off voltage. The second scan voltage is switched between a second scan-on voltage and a second scan-off voltage. An absolute value of a difference between the second scan-on voltage and the second scan-off voltage is greater than an absolute value of a difference between the first scan-on voltage and the first scan-off voltage.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
An electrical joint structure including a substrate, a multi-layer bonding structure, and a blocking layer is provided. The multi-layer bonding structure is present on the substrate and includes a diffusive metal layer and a tin-rich layer. The diffusive metal layer includes a copper-tin alloy on a surface of the diffusive metal layer. The surface faces the substrate. A thickness of the copper-tin alloy is less than or equal to 2 μm. The tin-rich layer is present on and in contact with the diffusive metal layer. The blocking layer is present between the multi-layer bonding structure and the substrate and at least in contact with a part of said copper-tin alloy, such that the multi-layer bonding structure is spaced apart from the substrate.
A method of transferring micro devices includes: aligning a detachable transfer plate to a carrier substrate with micro devices thereon by an alignment assistive mechanism which is detachably assembled with the detachable transfer plate; contacting the detachable transfer plate to the micro devices on the carrier substrate by the alignment assistive mechanism; picking up the micro devices from the carrier substrate; detaching the detachable transfer plate with the micro devices thereon from the alignment assistive mechanism; moving the detachable transfer plate with the micro devices thereon to be assembled to another alignment assistive mechanism above a receiving substrate to form a device transfer assembly; aligning the micro devices on the detachable transfer plate with the receiving substrate; and transferring the micro devices to the receiving substrate by the another alignment assistive mechanism through the detachable transfer plate.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
49.
Method for preventing crack extensions during lift-off process
A method for preventing crack extensions during a lift-off process is provided. The method includes forming an epitaxial layer on a wafer substrate; forming a guard trench in the epitaxial layer, wherein a depth of the guard trench in a thickness direction of the epitaxial layer is at least half of a thickness of the epitaxial layer, and a total length of the guard trench is greater than at least a quarter of a circumference of the epitaxial layer; and performing a lift-off process to separate the wafer substrate from the epitaxial layer.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
A micro light-emitting diode display including a substrate and at least one pixel and a reflective layer is provided. The substrate has at least a portion that is transparent to visible light. The pixel includes an opaque electrode, a micro light-emitting diode, and a filling material. The opaque electrode is present on the substrate. The micro light-emitting diode is present on and in contact with the opaque electrode. A vertical projection of the micro light-emitting diode projected on the substrate at least partially overlaps with a vertical projection of the opaque electrode projected on the substrate. The filling material is present on the micro light-emitting diode and the substrate. The reflective layer is present on the filling material. A vertical projection of the reflective layer projected on the substrate at least partially overlaps with said portion of the substrate.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A micro light-emitting diode is provided. The micro light-emitting diode includes a first type semiconductor layer and a second type semiconductor layer. The first type semiconductor layer includes at least one low resistance portion and a diffuse type high resistance portion. The low resistance portion extends between and reaches a first surface and a second surface of the first type semiconductor layer. The diffuse type high resistance portion extends between and reaches the first surface and the second surface. A thickness of the first type semiconductor layer is less than half of a lateral length of the low resistance portion on the first surface. The low resistance portion and the diffuse type high resistance portion form an interface therebetween on the first surface. A concentration of a guest material starts decreasing from the interface toward the low resistance portion.
H01L 33/26 - Materials of the light emitting region
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
A micro light-emitting diode display device including a driving transistor and a micro light-emitting diode is provided. The driving transistor includes a substrate, a gate, a gate insulator, a semiconductor layer, a drain electrode, and a source electrode. The gate insulator has a thickness less than or equal to about 500 angstroms. The micro light-emitting diode has a lateral length less than or equal to about 50 μm and is electrically connected to one of the source electrode and the drain electrode. A current injection channel is extended within one of a first type semiconductor layer and a second type semiconductor layer of the micro light-emitting diode and is spaced apart from a side surface of the micro light-emitting diode. A lateral length a light-emitting portion of an active layer of the micro light-emitting diode is less than or equal to about 10 μm.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
A method of liquid assisted micro cold binding is provided. The method includes: forming a conductive pad on the substrate in which the conductive pad consists essentially of indium; forming a liquid layer on the conductive pad; placing a micro device having an electrode facing the conductive pad over the conductive pad such that the micro device is in contact with the liquid layer and is gripped by a capillary force produced by the liquid layer between the micro device and the conductive pad in which the electrode consists essentially of indium; and evaporating the liquid layer such that the electrode is bound to the conductive pad and is in electrical contact with the conductive pad.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
An alternating self-compensation circuit including a light-emitting device, a first driving circuit, and a second driving circuit is provided. The first driving circuit is configured to function and to drive the light-emitting device during a first time period. The second driving circuit is configured to function and to drive the light-emitting device during a second time period. The first driving circuit and the second driving circuit are electrically and separately connected to one of two ends of the light-emitting device, and the first time period and the second time period are at least partially overlapped in time. The first driving circuit includes a delivery capacitor, a driving transistor, a reset circuit, a compensation circuit, and a data circuit. The second driving circuit also includes a delivery capacitor, a driving transistor, a reset circuit, a compensation circuit, and a data circuit.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
A micro light-emitting diode display device including a driving transistor and a micro light-emitting diode is provided. The driving transistor includes a substrate, a bottom gate, a gate insulator, a semiconductor layer, an etch stopper, a drain electrode, a source electrode, and an insulating layer. The drain electrode is ring-shaped and a contact portion between the drain electrode and the semiconductor layer surrounds the semiconductor layer. The source electrode is in contact with the semiconductor layer and is enclosed by the drain electrode. The insulating layer has a via therein to expose a portion of the source electrode. The micro light-emitting diode is electrically connected to the source electrode. The micro light-emitting diode includes a current injection channel present in the micro-light emitting diode. The current injection channel is separated from a side surface of the micro light-emitting diode.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
An electrostatic chuck including a body, an electrode, a diffusion blocking layer, and a composite dielectric layer is provided. The electrode is present on the body. The diffusion blocking layer is present on the electrode. The composite dielectric layer is present on the diffusion blocking layer. The composite dielectric layer includes a polymer layer and a plurality of inorganic dielectric particles. The plurality of inorganic dielectric particles is distributed within the polymer layer, and a permittivity of the inorganic dielectric particles is greater than a permittivity of the polymer layer.
H02N 13/00 - Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
B32B 27/20 - Layered products essentially comprising synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
57.
Method for minimizing average surface roughness of soft metal layer for bonding
A method for minimizing an average surface includes: forming an epitaxial layer on a growth substrate; forming the soft metal layer on the epitaxial layer in which the average surface roughness of a bonding surface of the soft metal layer is greater than a first value; forming a glue layer on a carrier substrate; placing a combination of the glue layer and the carrier substrate on the bonding surface in which the glue layer being in contact with the bonding surface of the soft metal layer; and applying an external pressure to compress the glue layer and the soft metal layer such that the average surface roughness of the bonding surface of the soft metal layer is reduced from the first value to a second value, wherein the second value is less than 80 nm.
H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
H01L 23/00 - Details of semiconductor or other solid state devices
A method for minimizing an average surface includes: forming an epitaxial layer on a growth substrate; forming the soft metal layer on the epitaxial layer in which the average surface roughness of a bonding surface of the soft metal layer is greater than a first value; forming a glue layer on a carrier substrate; placing a combination of the glue layer and the carrier substrate on the bonding surface in which the glue layer being in contact with the bonding surface of the soft metal layer; and performing a laser lift-off process to separate the growth substrate from the epitaxial layer such that the average surface roughness of the bonding surface of the soft metal layer is reduced to be less than a second value. The second value is smaller than the first value, and the second value is less than 80 nm.
H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
A micro light-emitting diode driving circuit including a micro light-emitting diode, a driving circuit, and a digital-to-analog converter is provided. The driving circuit includes a driving transistor electrically coupled to the micro light-emitting diode in series. The digital-to-analog converter is electrically coupled to a gate terminal of the driving transistor and is configured to provide grayscale voltage levels of the micro light-emitting diode to the driving circuit and the micro light-emitting diode. The grayscale voltage levels are determined by a gamma curve. A driving voltage is applied to the driving transistor and the micro light-emitting diode, such that at least one-sixteenth of the whole grayscale voltage levels of the micro light-emitting diode is within a linear region of at least one of current-voltage curves of the driving transistor. An accessible working range of the micro light-emitting diode is about 2 volts.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H05B 45/44 - Details of LED load circuits with an active control inside an LED matrix
H05B 45/10 - Controlling the intensity of the light
60.
Micro light-emitting diode driving circuit and display using the same
A micro light-emitting diode driving circuit including a micro light-emitting diode, a first driving transistor, and a second driving transistor is provided. The first driving transistor receives a first driving voltage from a first driving voltage source, and is electrically connected to the micro light-emitting diode and a low voltage source. The second driving transistor receives a second driving voltage from a second driving voltage source, and is electrically connected to the micro light-emitting diode and a low voltage source. One terminal of the first driving transistor and one terminal of the second driving transistor are electrically and separately connected to one end of the micro light-emitting diode, and a lateral length of the micro light-emitting diode is less than or equal to 50 μm.
G09G 3/34 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H05B 33/08 - Circuit arrangements for operating electroluminescent light sources
A method for binding a micro device on a substrate is provided. The method includes forming a conductive pad on the substrate; forming an elevated bonding layer on the conductive pad; lowering a temperature of the elevated bonding layer in an environment comprising a vapor such that at least a portion of the vapor is condensed to form a liquid layer on the elevated bonding layer; disposing the micro device over the elevated bonding layer such that the micro device is in contact with the liquid layer and is gripped by a capillary force produced by the liquid layer between the micro device and the elevated bonding layer, wherein the micro device comprises an electrode facing the elevated bonding layer; and evaporating the liquid layer such that the electrode is bound to the elevated bonding layer and is in electrical connection with the conductive pad.
A method for avoiding crack formation during a laser lift-off process is provided. The method includes: forming a composite glue layer on a carrier substrate in which the composite glue layer includes an ultraviolet glue and fillers therein and a Young's modulus of the fillers is greater than a Young's modulus of the ultraviolet glue; placing a semiconductor structure onto the composite glue layer in which the semiconductor structure includes a growth substrate, an epitaxial layer present on the growth substrate, and a metal layer present on the epitaxial layer, wherein placing the semiconductor structure makes the metal layer be in contact with and attached to the composite glue layer; and performing the laser lift-off process to separate the growth substrate from the epitaxial layer.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
A method for manufacturing a light emitting device is provided. The method includes: preparing a growth substrate with at least one dislocation-controlling feature thereon; sequentially growing a second type semiconductor layer, an active layer, and a first type semiconductor layer on the dislocation-controlling feature, wherein the active layer has a first region and at least one second region, and the dislocation-controlling feature causes a threading dislocation density of the first region to be greater than a threading dislocation density of the second region; and modifying a resistivity of the first type semiconductor layer, so that the resistivity of the first type semiconductor layer increases from a plurality of low resistance portions toward a high resistance portion of the first type semiconductor layer.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
64.
Transfer head and method for transferring micro devices
A method for transferring a plurality of micro devices e is provided. The method includes picking up the micro devices from a carrier substrate by a transfer head, and iteratively performing a placing process. The placing process includes moving the transfer head to a position, at which an array of the micro devices is positioned over an array of receiving locations of a receiving substrate, and placing said array of the micro devices onto the array of the receiving locations of the receiving substrate.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B81C 3/00 - Assembling of devices or systems from individually processed components
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
65.
Transfer head and method for transferring micro devices
A transfer head is provided. The transfer head includes a body having a plurality of arrays of grip regions with each of the arrays comprising at least two columns of the grip regions. The grip regions in one of the columns are electrically connected in series. The columns in one of the arrays are controlled by a single voltage source, and the columns in two of the arrays are controlled by two voltage sources respectively.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B81C 99/00 - Subject matter not provided for in other groups of this subclass
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
66.
Micro-bonding structure and method of forming the same
A micro-bonding structure including a substrate, a conductive pad, a bonding layer, a micro device, and a diffusive bonding portion is provided. The conductive pad is on the substrate. The bonding layer is on the conductive pad. A thickness of the bonding layer ranges from about 0.2 μm to about 2 μm. The micro device is on the bonding layer. The diffusive bonding portion is between and electrically connected with the bonding layer and the conductive pad. The diffusive bonding portion consists of at least a part of elements from the bonding layer and at least a part of elements from the conductive pad. A plurality of voids are between the bonding layer and the conductive pad, and one of the voids is bounded by the diffusive bonding portion and at least one of the conductive pad and the bonding layer.
A micro light-emitting diode driving circuit is provided. First and second driving transistors respectively receive a first driving voltage and a second driving voltage, and are electrically connected to the micro light-emitting diode and a low voltage source. A length of an edge of a channel of the first driving transistor in contact with the source terminal is shorter than that in contact with the drain terminal. A length of an edge of a channel of the second driving transistor in contact with the source terminal is greater than or equal to that in contact with the drain terminal. One of the source and drain terminals of the first driving transistor and one of the source and drain terminals of the second driving transistor are electrically and separately connected to one end of the micro light-emitting diode.
A method for transferring a micro device is provided. The method includes: preparing a carrier substrate with the micro device thereon, wherein an adhesive layer is present between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head; forming a liquid layer on a receiving substrate; and placing the micro device over the receiving substrate so that the micro device is in contact with the liquid layer and is gripped by a capillary force.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/786 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being other than a semiconductor body, e.g. insulating body
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 21/449 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups involving the application of mechanical vibrations, e.g. ultrasonic vibrations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/52 - Mounting semiconductor bodies in containers
H01L 21/447 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups involving the application of pressure, e.g. thermo-compression bonding
A method for transferring a micro device includes: preparing a carrier substrate with the micro device thereon in which an adhesive layer is present between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head comprising a force-adjustable glue layer thereon; forming a liquid layer on a receiving substrate; reducing the grip force of the force-adjustable glue layer of the transfer head to be smaller than a force attaching the micro device to the receiving substrate; placing the micro device over the receiving substrate such that the micro device is in contact with the liquid layer and is gripped by a capillary force; and moving the transfer head away from the receiving substrate such that the micro device is detached from the transfer head and is stuck to the receiving substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 23/00 - Details of semiconductor or other solid state devices
B65G 47/90 - Devices for picking-up and depositing articles or materials
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
A method for transferring a micro device is provided. The method includes: preparing a carrier substrate with the micro device thereon, wherein an adhesive layer is between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head; forming a liquid layer on a receiving substrate; and placing the micro device over the receiving substrate by the transfer head such that the micro device is in contact with the liquid layer and is gripped by a capillary force; and moving the transfer head away from the receiving substrate such that the micro device is detached from the transfer head and is stuck to the receiving substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 23/00 - Details of semiconductor or other solid state devices
B65G 47/90 - Devices for picking-up and depositing articles or materials
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/447 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups involving the application of pressure, e.g. thermo-compression bonding
H01L 21/52 - Mounting semiconductor bodies in containers
H01L 21/786 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being other than a semiconductor body, e.g. insulating body
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/449 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups involving the application of mechanical vibrations, e.g. ultrasonic vibrations
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
A micro-bonding structure including a substrate, a conductive pad, a bonding layer, a micro device, and a diffusive bonding portion is provided. The conductive pad is present on the substrate. The bonding layer is present on the conductive pad. The micro device is present on the bonding layer. The diffusive bonding portion is present between and electrically connected with the bonding layer and the conductive pad. The diffusive bonding portion consists of at least a part of elements from the bonding layer and at least a part of elements from the conductive pad. A plurality of voids are present between the bonding layer and the conductive pad, and one of the voids is bounded by the diffusive bonding portion and at least one of the conductive pad and the bonding layer.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A light emitting device is provided. The light emitting device includes a first type semiconductor layer, a second type semiconductor layer, an active layer, a plurality of first electrodes, and a second electrode. The first type semiconductor layer includes a plurality of low resistance portions and a high resistance portion. The low resistance portions are isolated from one another by the high resistance portion. The active layer is present between the first type semiconductor layer and the second type semiconductor layer. The active layer includes a first region and at least one second region. A threading dislocation density of the first region is greater than a threading dislocation density of the second region, and a vertical projection of at least one of the low resistance portions on the active layer at least partially overlaps with the second region.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
73.
Light emitting diode having current confinement structure
A light-emitting diode includes semiconductor layers and electrodes. A first type semiconductor layer includes first and second low resistance portions and a high resistance portion therebetween. The high resistance portion encloses the first low resistance portion and is configured to confine charge carriers substantially within the first low resistance portion. A resistivity of the first type semiconductor layer increases from the first low resistance portion toward the high resistance portion and decreases from the high resistance portion toward the second low resistance portion. A first electrode is electrically connected to the first low resistance portion and substantially no current flows between the first electrode and the second low resistance portion. A portion of the first type semiconductor layer is between the first electrode and a second type semiconductor layer. A second electrode is electrically connected to the second type semiconductor layer.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/26 - Materials of the light emitting region
A display device includes a substrate, at least one bonding electrode, at least one LED device electrically connected to the bonding electrode, and a transparent conductive layer. The bonding electrode is between the LED device and the substrate. The LED device includes a n type semiconductor layer, a p type semiconductor layer between the n type semiconductor layer and the bonding electrode, and an intermediate layer. The p type semiconductor layer includes a high resistance portion and a low resistance portion enclosed by the high resistance portion. A resistivity of the p type semiconductor layer increases from the low resistance portion toward the high resistance portion. The intermediate layer is between the p type semiconductor layer and the bonding electrode. The transparent conductive layer is electrically connected to the n type semiconductor layer. The LED device is between the transparent conductive layer and the bonding electrode.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/54 - Encapsulations having a particular shape
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A method for binding a micro device to a substrate is provided. The method includes: locally showering a gas on a portion of the substrate, wherein the gas has a water vapor pressure higher than an ambient water vapor pressure; and placing the micro device over the portion of the substrate after a part of water in the gas is condensed to form a liquid layer on the portion of the substrate and contacting the micro device with the liquid layer, so that the micro device is gripped by a capillary force produced by the liquid layer and is substantially held in a position within a controllable region on the substrate.
A method for transferring a device includes the following steps: forming a pliable adhesive layer on a carrier substrate; placing the device over the pliable adhesive layer; contacting a transfer head assembly with the device, in which a pliable dielectric layer of the transfer head assembly is in contact with the device during the contacting and more pliable than the device, such that the pliable dielectric layer of the transfer head assembly deforms during the contacting, and the pliable adhesive layer is more pliable than the device, such that the pliable adhesive layer deforms during the contacting; actuating the transfer head assembly to create a grip force; picking up the device by the grip force created by the transfer head assembly; and placing the device onto a receiving substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
77.
Light-emitting diode and method for manufacturing the same
A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, and an active layer. The first type semiconductor layer includes a low resistance portion and a high resistance portion. The low resistance portion is separated from at least one edge of the first type semiconductor layer by the high resistance portion, and the resistivity of the first type semiconductor layer is increased from the low resistance portion toward the high resistance portion. The active layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The active layer has a first region and a second region, in which the first region has a threading dislocation density greater than that of the second region, and a vertical projection of the low resistance portion on the active layer at least partially overlaps with the second region.
A method for binding a micro device to a conductive pad of an array substrate is provided. The method includes: forming a liquid layer on the conductive pad of the array substrate; disposing the micro device over the conductive pad such that the micro device is in contact with the liquid layer and is gripped by a capillary force produced by the liquid layer between the micro device and the conductive pad, wherein the micro device comprises an electrode facing the conductive pad; and evaporating the liquid layer such that the electrode is bound to and is in electrical contact with the conductive pad.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
H01S 5/02 - Structural details or components not essential to laser action
H01L 23/00 - Details of semiconductor or other solid state devices
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
79.
Display device and method for manufacturing the same
A method for manufacturing a display device is provided. The method includes: forming at least two bottom conductive lines on an array substrate; disposing at least four micro light emitting devices respectively on the bottom conductive lines; forming at least one filling material covering the micro light emitting devices; forming at least four openings in the filling material by photolithography, such that the micro light emitting devices are respectively exposed by the openings; and forming at least two upper conductive lines on the filling material, wherein the upper conductive lines are electrically connected to the micro light emitting devices through the openings, and the upper conductive lines and the bottom conductive lines cross at the micro light emitting devices.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A display device includes an array substrate, the bottom conductive lines, the micro light emitting devices, the conductive layers, the upper conductive lines, and a filling material. The bottom conductive lines are present on the array substrate. The conductive layers are respectively present between the micro light emitting devices and the bottom conductive lines. The upper conductive lines cross the bottom conductive lines at the micro light emitting devices. Each of the micro light emitting devices is present between at least one of the bottom conductive lines and at least one of the upper conductive lines. The filling material is present on the array substrate and has at least four openings to respectively expose the micro light emitting devices. The upper conductive lines are electrically connected to the micro light emitting devices respectively through the openings.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
A transfer head array includes a body and a plurality of transfer heads. The body includes a base portion and at least one wall portion. The wall portion is located on and stationary to the base portion. The wall portion has a top surface. The transfer heads are located on the top surface of the wall portion. The wall portion is continuous at least between two of the transfer heads.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
E04B 1/62 - Insulation or other protectionElements or use of specified material therefor
A method for transferring a semiconductor structure is provided. The method includes: coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, in which the adhesive layer includes an adhesive component and an surfactant component after the disposing, the semiconductor structure includes a body and a bottom electrode, and the bottom electrode is disposed between the body and the adhesive layer after the disposing; irradiating a first electromagnetic wave to the adhesive layer to reduce adhesion pressure of the adhesive layer to the semiconductor structure while the semiconductor structure remains on the adhesive layer, in which the carrier substrate, the semiconductor structure, and the bottom electrode have a pass band in between ultraviolet to infrared; and transferring the semiconductor structure from the adhesive layer to a receiving substrate after the adhesion pressure of the adhesive layer is reduced.
An operating method of a display device includes providing a first supply voltage to a light emitting diode to make a driving current pass through the light emitting diode. The light emitting diode is electrically connected with an electrically controlled switch, the electrically controlled switch is electrically connected with a control circuit, the control circuit is configured to drive the electrically controlled switch according to a data signal and a scan signal, the first supply voltage is a pulse width modulation voltage, and a duty cycle of the first supply voltage is less than 100%.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/3291 - Details of drivers for data electrodes in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
84.
Intermediate structure for transfer, method for preparing micro-device for transfer, and method for processing array of semiconductor device
A method for preparing a plurality of micro-devices for transfer includes temporarily bonding the micro-devices onto a carrier substrate; testing the micro-devices on the carrier substrate to determine if there is at least one first failed micro-device in the micro-devices; and removing the first failed micro-device from the carrier substrate.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A method for transferring a semiconductor structure is provided. The method includes: coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, such that the adhesive layer temporarily adheres the semiconductor structure, in which the adhesive layer includes an adhesive component and a surfactant component therein after the disposing; irradiating the electromagnetic wave to the adhesive layer through the carrier substrate to reduce adhesion pressure of the adhesive layer to the semiconductor structure while remaining the semiconductor structure within a predictable position, in which the semiconductor structure has a rejection band or is completely opaque, the carrier substrate has a pass band, and the pass band of the carrier substrate and the rejection band of the semiconductor structure overlaps; and transferring the semiconductor structure from the adhesive layer to a receiving substrate structure after the adhesion pressure of the adhesive layer is reduced.
A method for manufacturing a light-emitting diode (LED) includes plural steps as follows. A first type semiconductor layer is formed. A second type semiconductor layer is formed on the first type semiconductor layer. An impurity is implanted into a first portion of the second type semiconductor layer. The concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, such that the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/34 - Materials of the light emitting region containing only elements of group IV of the periodic system
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A light-emitting diode (LED) lighting device includes a substrate, an isolation layer, a first bottom electrode, a second bottom electrode, at least one first vertical LED, a first conductive bonding layer, at least one second vertical LED, a second conductive bonding layer, a first transparent sealing material, a second transparent sealing material, and a top electrode. The substrate has a base portion and a plurality of protruding portions present on the base portion. The base portion and the protruding portions cooperate to define at least one first recess and at least one second recess. At least one of the first recess and the second recess has a bottom surface and at least one sidewall adjacent to the bottom surface. The bottom surface and the sidewall are reflective. The first vertical LED and the second vertical LED are electrically connected in series.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/54 - Encapsulations having a particular shape
A method for manufacturing at least one light emitting diode (LED) includes epitaxying at least one light emitting diode (LED) structure on a growth substrate; forming at least one supporting layer on the LED structure; temporarily adhering the supporting layer to a carrier substrate through an adhesive layer, in which the supporting layer has a Young's modulus greater than that of the adhesive layer; and removing the growth substrate from the LED structure.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A micro-light emitting diode (micro-LED) device includes a receiving substrate and a micro-LED. The micro-LED includes a first type semiconductor layer, a second type semiconductor layer, a current controlling layer, at least one reflective layer, and at least one first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling layer is joined with one of the first type semiconductor layer and the second type semiconductor layer, the current controlling layer having at least one opening therein. The reflective layer electrically is coupled with the first type semiconductor layer. The first electrode is disposed on a surface of the reflective layer facing the receiving substrate. The first electrode forms an adhesive bonding system with the receiving substrate.
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
A transfer head array includes a base substrate, an interlayer isolation layer, plural transfer heads, and at least one shielding layer. The interlayer isolation layer is disposed on the base substrate, and the interlayer isolation layer has a flat top surface facing away from the base substrate. The transfer heads are arranged on the interlayer isolation layer. The shielding layer is disposed in the interlayer isolation layer.
A transfer head array includes a body and a plurality of transfer heads. The body has a first surface, a second surface opposite to the first surface, and a plurality of recesses. The first surface has at least one chucking region and at least one interference avoidance region, and the recesses are separated from each other and are disposed in the interference avoidance region. The transfer heads are disposed on the chucking region.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 23/00 - Details of semiconductor or other solid state devices
A LED display includes a bottom substrate, a first bottom electrode, a micro light emitting device, a wavelength conversion layer, an opposite electrode, and a first isolation layer. The first bottom electrode is disposed on the bottom substrate. The micro light emitting device is disposed on the first bottom electrode and includes at least one current controlling structure having at least one opening therein. The wavelength conversion layer covers the micro light emitting device, in which the wavelength conversion layer converts the light from a range of initial wavelengths into a range of predetermined wavelengths, and the range of predetermined wavelengths is greater than the range of initial wavelengths. The opposite electrode is electrically connected to the micro light emitting device. The first isolation layer is disposed between the micro light emitting diode and the opposite electrode to isolate the first bottom electrode and the opposite electrode.
1. The opposite electrode is disposed on the micro light emitting device and electrically connected to the micro light emitting device and the second bottom electrode. The encapsulation layer at least covers the micro light emitting device and the first isolation layer.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/54 - Encapsulations having a particular shape
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
A method for transferring at least one device is provided. The method includes: coating a first adhesive layer onto a first carrier substrate; putting the device onto the first adhesive layer, such that the first adhesive layer temporarily adheres the device thereto; reducing adhesion force of the first adhesive layer to the device while remaining a location of the device in a controllable position on the first adhesive layer, wherein the first adhesive layer has a Young's modulus less than or equal to 30 GPa before and after the adhesion force of the first adhesive layer is reduced; and transferring the device from the first adhesive layer to a receiving substrate after the adhesion force of the first adhesive layer is reduced.
A machine for transferring at least one micro-device includes a carrier and a transfer device. The carrier includes a pedestal, a substrate, and at least one first cushion layer. The substrate allows the micro-device to be temporarily disposed thereon. The first cushion layer is disposed between the pedestal and the substrate. The transfer device includes a transfer head holder, transfer head, and at least one second cushion layer. The transfer head holder moves at least along a z-axis substantially perpendicular to the substrate. The transfer head has a grip force on the micro-device. The second cushion layer is disposed between the transfer head holder and the transfer head.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A light-emitting diode (LED) lighting device includes a substrate, a first bottom electrode, a second bottom electrode, a first bottom transparent isolation layer, a second bottom transparent isolation layer, a first vertical LED, a second vertical LED, and a top transparent electrode. The substrate has a first recess and a second recess therein. The first bottom electrode and the second bottom electrode are respectively disposed in the first recess and the second recess and are reflective. The first vertical LED is disposed in the first recess and on the first bottom electrode. The second vertical LED is disposed in the second recess and on the second bottom electrode. The first bottom transparent isolation layer and the second bottom transparent isolation layer are respectively disposed in the first recess and the second recess. The top transparent electrode electrically connects the first vertical LED and the second bottom electrode.
A light-emitting diode (LED) lighting device includes a substrate, a first bottom electrode, a second bottom electrode, a first bottom transparent isolation layer, a second bottom transparent isolation layer, a first vertical LED, a second vertical LED, and a top transparent electrode. The substrate has a first recess and a second recess therein. The first bottom electrode and the second bottom electrode are respectively disposed in the first recess and the second recess and are reflective. The first vertical LED is disposed in the first recess and on the first bottom electrode. The second vertical LED is disposed in the second recess and on the second bottom electrode. The first bottom transparent isolation layer and the second bottom transparent isolation layer are respectively disposed in the first recess and the second recess. The top transparent electrode electrically connects the first vertical LED and the second bottom electrode.
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A light-emitting diode (LED) lighting device includes a substrate, a first bottom electrode, a bottom transparent isolation layer, a first vertical LED, a second vertical LED, a first top transparent electrode, and a second top transparent electrode. The first bottom electrode is disposed on the substrate and is reflective. The first vertical LED and the second vertical LED are disposed on the first bottom electrode. The bottom transparent isolation layer covers the substrate and the first bottom electrode and exposes the first vertical LED and the second vertical LED. The first top transparent electrode is electrically connected to the first vertical LED. The second top transparent electrode is electrically connected to the second vertical LED. The first top transparent electrode, the second top transparent electrode, and the first bottom electrode cooperate to electrically connect the first vertical LED and the second vertical LED in series.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor layer, a dielectric layer, and electrodes. The second type semiconductor layer is disposed on or above the first type semiconductor layer. The dielectric layer is disposed on the second type semiconductor layer. The dielectric layer includes openings therein to expose parts of the second type semiconductor layer. The electrodes partially are disposed on the dielectric layer and respectively electrically coupled with the exposed parts of the second type semiconductor layer through the openings of the dielectric layer, in which the electrodes are separated from each other.
A light-emitting diode (LED) lighting device includes a substrate, a first bottom electrode, a bottom transparent isolation layer, a first vertical LED, a second vertical LED, a first top transparent electrode, and a second top transparent electrode. The substrate has a first recess therein. The first bottom electrode is disposed in the first recess and is reflective. The first vertical LED and the second vertical LED are disposed in the first recess and on the first bottom electrode. The first bottom transparent isolation layer is disposed in the first recess. The first top transparent electrode is electrically connected to the first vertical LED. The second top transparent electrode is electrically connected to the second vertical LED. The first top transparent electrode, the second top transparent electrode, and the first bottom electrode cooperate to electrically connect the first vertical LED and the second vertical LED in series.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group