A system includes a byproduct analysis processor for use with a byproduct detector in fluid communication with a foreline of a processing chamber having a plasma source configured to generate a reactive species adapted to clean an interior of the processing chamber during a chamber cleaning process. The processor can obtain detection data representing a cleaning byproduct concentration exhausted from an interior of the processing chamber and determine an endpoint of the chamber cleaning process based and/or determine a fault condition associated with the processing chamber based on the detection data.
A controller for a generator includes a feedforward control module. The feedforward control module is configured to generate an adjustment profile to control a parameter of a generator in accordance with a desired output signal. The feedforward control module generates a plurality of adjustment values in accordance with sub-regions of the output signal. Each sub-region includes a portion of the desired output signal.
A power generator has a first plurality of power amplifiers each configured to receive a first, common supply voltage and to output a plurality of discrete DC voltages. At least one of the plurality of discrete DC voltages may be varied by varying the first, common supply voltage. The RF power generator may also include a second plurality of power amplifiers receiving a second either common or distinct supply voltage that differs from the first supply voltage. At least one of the plurality of discrete DC voltages may be varied by varying the second common or distinct supply voltage. The output of each power amplifier is added in series to generate an output voltage for the power generator. One of the plurality of power amplifiers is actuated or deactuated at a first time and an other of the plurality of power amplifiers is actuated or deactuated at a second time.
A radio frequency (RF) power generation system includes a RF power source that generates a RF output signal delivered to a load. A RF power controller is configured to generate a control signal to vary the RF output signal. The controller adjusts a parameter associated with the RF output signal, and the parameter is controlled in accordance with a trigger signal. The parameter is adjusted over a predetermined number of bins. The parameter is adjusted in accordance with a cost function, and the cost function is determined by introducing a perturbation for each bin into an actuator that affects the cost function. The actuator may control an external RF output signal, and the trigger signal may vary in accordance with the external RF output signal. The perturbation is determined in accordance with a basis set having fewer dimensions than the number of bins.
A system for determining a concentration of radicals within a particle stream to be delivered into a semiconductor processing chamber includes a plasma generator, a spectrometer optically coupled to an glow discharge region of the plasma generator and a controller communicatively coupled to the spectrometer. The plasma source is operative to generate a glow discharge to excite radicals and diluent gas in a received effluent stream. The spectrometer is operative to output measurement data representing an intensity of light emitted by the excited radicals and diluent gas. The controller is operative to calculate a concentration of radicals within the effluent stream based on the measurement data.
An in-situ current sensing apparatus for a plasma processing system has one or more sections defining a plasma channel, the plasma processing system configured to form a plasma in the plasma channel using a process gas. The in-situ current sensing apparatus includes an assembly including an electrically conductive housing coupled to a dielectric coating layer, wherein a surface of the dielectric coating layer is configured to physically contact at least one of the process gas or the plasma in the plasma channel. The in-situ current sensing apparatus also includes a current probe, inductively or electrically connected to the assembly, for sensing a capacitively-coupled current within the assembly caused by the formation of plasma in the plasma channel. The in-situ current-sensing apparatus further includes at least one dielectric break for electrically isolating the assembly from the one or more sections. The assembly may include an electrode embedded within the housing.
Pressure control methods and devices are provided. A pressure controller includes a control valve configured to control pressure of a fluid in a flow path, a flow restrictor disposed in the flow path, and distal and proximal pressure sensors. The distal pressure sensor detects fluid pressure at the flow restrictor at a location distal from the control valve, and the proximal pressure sensor detects fluid pressure at the flow restrictor at a location proximal to the control valve. The pressure controller further includes a controller configured to: 1) control actuation of the control valve based on pressure as detected by the distal pressure sensor and a pressure setpoint, and 2) determine a mass flow rate based on pressure as detected by the distal and proximal pressure sensors.
Pressure control methods and devices are provided. A pressure controller includes a control valve configured to control pressure of a fluid in a flow path, a flow restrictor disposed in the flow path, and distal and proximal pressure sensors. The distal pressure sensor detects fluid pressure at the flow restrictor at a location distal from the control valve, and the proximal pressure sensor detects fluid pressure at the flow restrictor at a location proximal to the control valve. The pressure controller further includes a controller configured to: 1) control actuation of the control valve based on pressure as detected by the distal pressure sensor and a pressure setpoint, and 2) determine a mass flow rate based on pressure as detected by the distal and proximal pressure sensors.
G05D 16/20 - Control of fluid pressure characterised by the use of electric means
G05D 7/06 - Control of flow characterised by the use of electric means
G05B 11/42 - Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential for obtaining a characteristic which is both proportional and time-dependent, e.g. P. I., P. I. D.
9.
Method and apparatus for plasma ignition in toroidal plasma sources
A plasma apparatus of a plasma processing system is provided. The plasma apparatus defines a toroidal plasma channel and includes multiple end blocks defining respective portions of the toroidal plasma channel. Each end block includes an end-block tube constructed from a first electrically conductive material and a dielectric coating disposed on an interior surface of the end-block tube. The plasma apparatus also includes multiple mid-blocks defining respective portions of the toroidal plasma channel. Each mid-block includes at least one heat sink located adjacent to a substantially linear tube with a thermal interface disposed therebetween. The thermal interface is in physical communication with the tube and the at least one heat sink. The mid-block tube has a substantially uniform wall thickness and is constructed from a dielectric material. The at least one heat sink is constructed from a second electrically conductive material.
A monitoring system detects and measures a quantity of radical particles within a gas. A test chamber is coupled to a flow channel that transmits a gas. The test chamber defines an aperture connecting the test chamber and the flow channel, and the aperture permits a subset of the gas to enter the test chamber from the flow channel. An ionizer is positioned within the test chamber and generates radical ions from radical particles of the subset of the gas. A mass spectrometer measures a quantity of the radical ions, thereby providing a measurement of the radical particles in the gas.
A RF power generation system includes a power source configured to generate a periodic waveform applied to a load and a controller configured to receive at least one of a voltage signal or a current signal indicating a respective voltage and current applied to an electrode of the load. The controller determines a surface potential of a workpiece in the load in accordance with the at least one of the voltage signal or the current signal and a series capacitance of the electrode. The controller further determines an ion potential in accordance with an approximation of the surface potential. The periodic waveform may be one of a pulsed DC waveform, a RF waveform, or a pulsed RF waveform.
A RF power generator having a fixed power generation section. The fixed power generation section includes a first plurality of power amplifiers each configured to receive a supply voltage and to output a respective first voltage. The RF power generator also includes a weighted power generation section including a plurality of weighted power amplifier modules. Each weighted power amplifier module includes a weighted power amplifier and an associated transformer. Each weighted power amplifier of the weighted power amplifier module receives a respective weighted supply voltage. The voltage across the transformer of each weighted power amplifier module is a fraction of the first voltage.
A RF power generator having a fixed power generation section. The fixed power generation section includes a first plurality of power amplifiers each configured to receive a supply voltage and to output a respective first voltage. The RF power generator also includes a weighted power generation section including a plurality of weighted power amplifier modules. Each weighted power amplifier module includes a weighted power amplifier and an associated transformer. Each weighted power amplifier of the weighted power amplifier module receives a respective weighted supply voltage. The voltage across the transformer of each weighted power amplifier module is a fraction of the first voltage.
A RF power generation system includes a power source configured to generate a periodic waveform applied to a load and a controller configured to receive at least one of a voltage signal or a current signal indicating a respective voltage and current applied to an electrode of the load. The controller determines a surface potential of a workpiece in the load in accordance with the at least one of the voltage signal or the current signal and a series capacitance of the electrode. The controller further determines an ion potential in accordance with an approximation of the surface potential. The periodic waveform may be one of a pulsed DC waveform, a RF waveform, or a pulsed RF waveform.
A thermal conductivity gauge measures gas pressure within a chamber. A sensor wire and a resistor form a circuit coupled between a power input and ground, where the sensor wire extends into the chamber and connects to the resistor via a terminal. A controller adjusts the power input, as a function of a voltage at the terminal and a voltage at the power input, to bring the sensor wire to a target temperature. Based on the adjusted power input, the controller can determine a measure of the gas pressure within the chamber.
G01L 9/02 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
G01L 21/10 - Vacuum gauges by measuring variations in the heat conductivity of the medium, the pressure of which is to be measured
G01L 21/12 - Vacuum gauges by measuring variations in the heat conductivity of the medium, the pressure of which is to be measured measuring changes in electric resistance of measuring members, e.g. of filaments; Vacuum gauges of the Pirani type
G01L 21/14 - Vacuum gauges by measuring variations in the heat conductivity of the medium, the pressure of which is to be measured using thermocouples
Mass flow control (MFC) devices capable of self-verification and methods of providing for self-verifying mass flow control are provided. An MFC includes a chamber configured to receive a fluid, an upstream valve disposed upstream of the chamber, and a downstream control valve disposed downstream of the chamber. The MFC further includes a pressure drop element disposed downstream of the downstream control valve and first and second pressure sensors. A controller of the MFC is configured to control actuation of the downstream control valve by toggling between flow-based feedback control and pressure-based feedback control. In flow-based feedback control, a flow is monitored based on a rate of decay of pressure in the chamber as detected by the first pressure sensor upon closure of the upstream control valve. In pressure-based feedback control, a pressure upstream of the pressure drop element, as detected by the second pressure sensor, is monitored.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
18.
GAS CONCENTRATION SENSOR AND METHOD OF USING THE SAME
An optical gas concentration sensor includes a sample cell comprising an inlet port and an outlet port through which a gas can flow, a light source configured to emit light into an interior of the sample cell, a light detector arranged outside the sample cell, and an optical waveguide assembly optically coupling an interior of the sample cell to the detector. The optical waveguide assembly includes a first optical waveguide coupled to the sample cell, a second optical waveguide coupled to the detector and an optical coupler optically coupling the first optical waveguide to the second optical waveguide. The first optical waveguide has different optical transmission characteristics from the second optical waveguide at wavelengths in a wavelength range from 1.5 μm to 18 μm.
G01N 21/3504 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
G01N 21/25 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
A plasma-generation system is provided that includes a variable-frequency microwave generator configured to generate microwave power and a plasma applicator configured to use the microwave power from the microwave generator to (i) ignite a process gas therein for initiating a plasma in a plasma ignition process and (ii) maintain the plasma in a steady state process. The system also includes a coarse tuner connected between the microwave generator and the plasma applicator. At least one physical parameter of the coarse tuner is adapted to be set to achieve coarse impedance matching between the microwave generator and the plasma generated during both the plasma ignition process and the steady state process. A load impedance of the plasma generated during the plasma ignition process and the steady state process is adapted to vary. The microwave generator is configured to tune an operating frequency at the set physical parameter of the coarse tuner.
An apparatus and technique for measuring a concentration of radical particles within a gas sample obtained from a location within a semiconductor processing system having a process chamber while a process is being performed within the process chamber includes obtaining radical data corresponding to the measured concentration of radical particles, comparing the obtained radical data to at least one threshold and outputting a control signal when a result of the comparing indicates that the obtained radical data has a predetermined relationship with the at least one threshold. The first control signal can be configured to cause a chamber recovery process to be performed within the process chamber or indicate that a chamber recovery process should be performed within the process chamber.
G01L 21/12 - Vacuum gauges by measuring variations in the heat conductivity of the medium, the pressure of which is to be measured measuring changes in electric resistance of measuring members, e.g. of filaments; Vacuum gauges of the Pirani type
22.
EXTREMUM-SEEKING CONTROL APPARATUSES AND METHODS FOR AUTOMATIC FREQUENCY TUNING
A RF generator includes a RF power source configured to generate an output signal at an output frequency, and an extremum-seeking frequency controller configured to generate a frequency control signal. The frequency control signal varies the output frequency of the RF power source, and the frequency control signal is formed from a gradient signal. The RF generator further includes a gradient estimator configured to generate the gradient signal. A frequency of the frequency control signal is adjusted based on the gradient signal. The gradient estimator is configured to receive frequency values of the frequency control signal and corresponding output response values, and the gradient signal is generated based on the frequency values and the output response values. Other example RF generators, methods for extremum-seeking frequency control of a RF generator, and control systems for controlling a RF generator are also disclosed.
A power supply system includes a RF power source configured to generate an output signal at an output frequency, a signal source configured to generate a perturbation signal, an extremum seeking frequency controller configured to generate a frequency control signal based on the perturbation signal, and a frequency selector configured to select a perturbation frequency of the perturbation signal that is isolated from at least one frequency tone associated with the power supply system. The frequency control signal varies the output frequency of the RF power source. Other example power supply system, methods for controlling a RF generator, and control systems for controlling a RF generator are also disclosed.
A plasma source is provided that is configured to form a section of a wall of a vacuum component. The plasma source comprises a body including a dielectric member, a first surface exposed to an exterior region of the vacuum component, and a second surface exposed to an interior region of the vacuum component. The plasma source also comprises at least one electrode disposed in a receiving channel of the body with at least a portion of the dielectric member located adjacent to the at least one electrode in the receiving channel. The plasma source further comprise at least one discharge region adjacent to the receiving channel within the body. The at least one discharge region is exposed to the interior region of the vacuum component via an opening on the second surface of the body.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges using radio frequency discharges
25.
METHODS AND SYSTEMS FOR ENDPOINT DETECTION IN FORELINE OF CHAMBER CLEAN AND FORELINE CLEAN PROCESSES
Systems and methods of monitoring a cleaning process for a deposition chamber are provided. A chamber cleaning source is activated to supply a cleaning agent to a deposition chamber and a foreline cleaning source disposed downstream of the deposition is activated to supply the cleaning agent to a foreline. The transmission recovery of an optical sensor disposed in the foreline is monitored. The optical sensor is disposed in the foreline at a location downstream of the foreline cleaning source. At least one of a foreline clean endpoint and a chamber clean endpoint is detected based on the monitored transmission recovery.
Systems and methods of monitoring a cleaning process for a deposition chamber are provided. A chamber cleaning source is activated to supply a cleaning agent to a deposition chamber and a foreline cleaning source disposed downstream of the deposition is activated to supply the cleaning agent to a foreline. The transmission recovery of an optical sensor disposed in the foreline is monitored. The optical sensor is disposed in the foreline at a location downstream of the foreline cleaning source. At least one of a foreline clean endpoint and a chamber clean endpoint is detected based on the monitored transmission recovery.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
27.
PLASMA PROCESS CONTROL OF MULTI-ELECTRODE SYSTEMS EQUIPPED WITH ION ENERGY SENSORS
A RF generator includes a first RF power source configured to output a first RF output signal to a first electrode of a load. The RF generator includes a first sensor for detecting a first parameter of the first RF output signal and determining a first characteristic of a plasma in the load. A second RF power source outputs a second RF output signal to a second electrode. A second sensor detects a second parameter of the second RF output signal and determines a second characteristic of a plasma in the load. A RF power controller receives the first characteristic and the second characteristic and generates a first control signal and a second control signal. The first control signal adjusts the first RF output signal, and the second control signal adjusts the second RF output signal.
An isolation valve assembly is provided that includes a valve body having an inlet and an outlet, a sealing body disposed within an interior cavity of the valve body, and an actuatable closure element disposed within the valve body. The sealing body comprises a channel extending between a first opening on a surface of the sealing body and a second opening on an opposite surface of the sealing body. The sealing body is rotatable between a first position permitting gas flow from the inlet to the outlet of the valve body via the channel, and a second position preventing gas flow from the inlet to the outlet of the valve body. The actuatable closure element is configured to retain the sealing body stationary in the first position or the second position.
An apparatus for feedback control in plasma processing systems using radical sensing, and a method for feedback control in plasma processing systems using radical sensing, the apparatus comprising at least one process gas supply system configured to output at least one process gas, at least one plasma source configured to receive the at least one process gas and generate at least one radical flow, at least one process chamber in communication with the at least one plasma source, wherein the process chamber receives the at least one radical flow and directs at least a portion of the at least one radical flow to one or more devices, the process chamber configured to output at least one process chamber output, at least one gas analyzer in communication with and configured to sample at least one of the at least one process gas, at least one radical flow, at least one radical flow within the at least one process chamber, and the at least one process chamber output, and at least one controller in communication with at least one of the process gas supply system, at least one plasma source, and at least one process chamber, the controller configured to generate at least one control signal based on data from the at least one gas analyzer and selectively control at least one of the process gas supply system, at least one plasma source, and at least one process chamber.
A method of coating a plasma channel of a plasma source, comprises providing at least one electrolyte having one or more chelating agents therein, treating at least one surface to produce a processed surface, smoothing the surface of the processed surface with at least one post processing technique to produce at least one smoothed processed surface, and cleaning the smoothed surface.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
A controller for a plasma generation system includes a model evaluation module receives a sensed value that varies in accordance with a state of a plasma controlled by a RF power generator. The model evaluation module generates a plasma parameter that varies in accordance with the sensed value. A model integration module receives the plasma parameter, integrates the plasma parameter, and outputs an integrated model parameter. An IEDF evaluation module receives the integrated model parameter and generates an ion energy distribution function (IEDF) in accordance with the integrated model parameter. An IEDF controller module receives the IEDF and generates a signal for controlling a RF generator. A RF generator control module receives the signal and generates an RF generator control signal to control at least one of power, frequency, or phase of the RF power generator.
A controller for a plasma generation system includes a model evaluation module receives a sensed value that varies in accordance with a state of a plasma controlled by a RF power generator. The model evaluation module generates a plasma parameter that varies in accordance with the sensed value. A model integration module receives the plasma parameter, integrates the plasma parameter, and outputs an integrated model parameter. An IEDF evaluation module receives the integrated model parameter and generates an ion energy distribution function (IEDF) in accordance with the integrated model parameter. An IEDF controller module receives the IEDF and generates a signal for controlling a RF generator. A RF generator control module receives the signal and generates an RF generator control signal to control at least one of power, frequency, or phase of the RF power generator.
Devices and methods for mass flow verification are provided. A mass flow verifier includes a chamber configured to receive a fluid, a critical flow nozzle upstream of the chamber, a chamber valve, a downstream valve, and a bypass valve. The chamber valve is configured to selectively enable fluid flow from the critical flow nozzle to the chamber. The downstream valve is configured to selectively enable fluid flow from the chamber to a downstream location. The bypass valve is configured to selectively enable fluid flow from the critical flow nozzle to a dump location. The mass flow verifier further includes a controller configured to verify flow rate of the fluid based on a rate of rise in pressure of the fluid as detected by a pressure sensor in the chamber.
Devices and methods for mass flow verification are provided. A mass flow verifier includes a chamber configured to receive a fluid, a critical flow nozzle upstream of the chamber, a chamber valve, a downstream valve, and a bypass valve. The chamber valve is configured to selectively enable fluid flow from the critical flow nozzle to the chamber. The downstream valve is configured to selectively enable fluid flow from the chamber to a downstream location. The bypass valve is configured to selectively enable fluid flow from the critical flow nozzle to a dump location. The mass flow verifier further includes a controller configured to verify flow rate of the fluid based on a rate of rise in pressure of the fluid as detected by a pressure sensor in the chamber.
G01F 15/00 - MEASURING VOLUME, VOLUME FLOW, MASS FLOW, OR LIQUID LEVEL; METERING BY VOLUME - Details of, or accessories for, apparatus of groups insofar as such details or appliances are not adapted to particular types of such apparatus
G01F 1/76 - Devices for measuring mass flow of a fluid or a fluent solid material
G01F 25/10 - Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
35.
Nano-Textured Attenuator for Use with Laser Beam Profiling and Laser Beam Characterization Systems and Method of Use
The present application discloses a nano-textured attenuator which includes a body defining an input aperture, a measurement aperture, and at least one beam dump aperture. At least one coupling fixture may be formed on or positioned on the body, a first nano-textured beamsplitter is positioned within the body and configured to transmit 85% to 99.9999% of an input beam therethrough while reflecting 0.0001% of the input beam to form a partially attenuated beam, at least a second nano-textured beamsplitter is also positioned within the body and is configured to transmit 85% to 99.9999% of the partially attenuated beam therethrough while reflecting 0.0001% of the partially attenuated beam to form an attenuated measurement beam, and at least one camera in communication with the measurement aperture be configured to measure at least one optical characteristic of the attenuated measurement beam.
An isolation valve assembly is provided that includes a valve body having an inlet and an outlet, a sealing body disposed within an interior cavity of the valve body, and an actuatable closure element disposed within the valve body. The sealing body comprises a channel extending between a first opening on a surface of the sealing body and a second opening on an opposite surface of the sealing body. The sealing body is rotatable between a first position permitting gas flow from the inlet to the outlet of the valve body via the channel, and a second position preventing gas flow from the inlet to the outlet of the valve body. The actuatable closure element is configured to retain the sealing body stationary in the first position or the second position.
F16K 3/04 - Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing faces; Packings therefor with pivoted closure members
37.
Method and apparatus for pressure based mass flow control
Mass flow controllers that can provide for improved bleeding time and can be manufactured with less complexity and cost are provided. A mass flow controller includes a body having a valve outlet bore defining a flow path and an adjustable valve configured to control flow of a gas through the flow path. A valve element includes an outlet orifice of the adjustable valve and is disposed within the bore. The mass flow controller further includes a pressure drop element disposed coaxially with the valve element within the bore. An upstream pressure sensor is configured to detect a pressure at a location in the flow path between the adjustable valve and the pressure drop element, and a controller is configured to determine a flow rate through the flow path based on pressure as detected by the upstream pressure sensor.
G01F 1/88 - Indirect mass flowmeters, e.g. measuring volume flow and density, temperature, or pressure with differential-pressure measurement to determine the volume flow
G01F 15/00 - MEASURING VOLUME, VOLUME FLOW, MASS FLOW, OR LIQUID LEVEL; METERING BY VOLUME - Details of, or accessories for, apparatus of groups insofar as such details or appliances are not adapted to particular types of such apparatus
Mass flow controllers that can provide for improved bleeding time and can be manufactured with less complexity and cost are provided. A mass flow controller includes a body having a valve outlet bore defining a flow path and an adjustable valve configured to control flow of a gas through the flow path. A valve element includes an outlet orifice of the adjustable valve and is disposed within the bore. The mass flow controller further includes a pressure drop element disposed coaxially with the valve element within the bore. An upstream pressure sensor is configured to detect a pressure at a location in the flow path between the adjustable valve and the pressure drop element, and a controller is configured to determine a flow rate through the flow path based on pressure as detected by the upstream pressure sensor.
A radio frequency (RF) generator includes a RF power source configured to output an RF power signal, and a controller coupled to the RF power source. The controller is configured to generate a pulse to modulate the RF power signal of the RF power source. The pulse includes one or more state transitions. The controller is further configured to receive a sync signal indicative of one or more operating characteristics or parameters of another RF generator, and adjust at least one of the state transitions of the pulse to synchronize the state transition with a defined phase of the received sync signal. Other example RF generators, RF power delivery systems including one or more RF generators, and control methods for adjusting a state transition of a pulse to synchronize the state transition with a defined phase of a sync signal are also disclosed.
In a system for processing gas, a gas analyzer in a gas analyzer chamber measures a quantity of ions generated from a gas. An ionization source includes an ionization chamber and an electron source for generating ions for the gas analyzer. The ionization chamber encompasses an ionization region in which particles of the gas are charged to form the ions. A channel directs the gas from a gas source into the ionization chamber, and the channel extends to a surface of the ionization chamber. An ionization source vacuum pump is in gaseous communication with the ionization chamber via a substantially large opening, and operates to draw gas from the ionization chamber.
In a system for processing gas, a gas analyzer in a gas analyzer chamber measures a quantity of ions generated from a gas. An ionization source includes an ionization chamber and an electron source for generating ions for the gas analyzer. The ionization chamber encompasses an ionization region in which particles of the gas are charged to form the ions. A channel directs the gas from a gas source into the ionization chamber, and the channel extends to a surface of the ionization chamber. An ionization source vacuum pump is in gaseous communication with the ionization chamber via a substantially large opening, and operates to draw gas from the ionization chamber.
G01N 27/64 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electric discharges, e.g. emission of cathode using wave or particle radiation to ionise a gas, e.g. in an ionisation chamber
H01J 49/14 - Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
H01J 49/24 - Vacuum systems, e.g. maintaining desired pressures
H01J 49/42 - Stability-of-path spectrometers, e.g. monopole, quadrupole, multipole, farvitrons
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
H01J 49/00 - Particle spectrometers or separator tubes
42.
Demagnetizing coils for linearity improvement of current ratio of plasma processing systems
A RF power generator has a RF power source configured to generate an output signal. A power splitter is configured to receive the output signal and generate a plurality of split signals. A demagnetizing circuit is configured to receive the plurality of split signals. The demagnetizing circuit is configured to include a plurality of inductances corresponding to the plurality of split signals. The plurality of inductances is configured to reduce the effects of mutual impedance of an ICP chamber in series with the plurality of inductances so that a ratio between a pair of the plurality of split signals varies substantially linearly as one of the pair of the plurality of split signals is varied.
A RF power generator has a RF power source configured to generate an output signal. A power splitter is configured to receive the output signal and generate a plurality of split signals. A demagnetizing circuit is configured to receive the plurality of split signals. The demagnetizing circuit is configured to include a plurality of inductances corresponding to the plurality of split signals. The plurality of inductances is configured to reduce the effects of mutual impedance of an ICP chamber in series with the plurality of inductances so that a ratio between a pair of the plurality of split signals varies substantially linearly as one of the pair of the plurality of split signals is varied.
The present invention concerns a dissolved ammonia delivery system, comprising at least one ultrapure water source configured to provide ultrapure water, at least one carrier gas source configured to provide at least one carrier gas, at least one ammonia (NH3) source configured to provide NH3, at least one ammonia saturation module having at least one of one main flow pathway and one bypass flow pathway in communication with the main flow pathway if both main flow pathway and bypass flow pathway are comprised by said at least one ammonia saturation module, the main flow pathway if present configured to have ultrapure water from the ultrapure water source flowed therethrough, the bypass flow pathway configured to receive at least a portion of the ultrapure water from the main flow pathway, if present, to form at least one ultrapure water bypass flow within the bypass flow pathway, wherein the carrier gas and NH3 introduced into the ultrapure water bypass flow resulting in NH3 dissolving in the ultrapure water bypass flow.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
37 - Construction and mining; installation and repair services
42 - Scientific, technological and industrial services, research and design
Goods & Services
Maintenance and repair of products for use in semiconductor
manufacturing processes. Product design and development in the field of semiconductor
manufacturing processes, namely, design and development of
components, subsystems and systems for generation, analysis,
control, measurement and delivery of gases used under
vacuum; design and testing for new product development,
namely, lasers, optics and opto-mechanic products for system
level integration for beam creation, attenuation and
delivery, beam profiling and measurement, specimen
positioning and stabilization; product research and
development in the field of power and reactive gas
generation, vacuum measurement and control, gas creation and
delivery, laser and photonics creation, delivery and
measurement; calibration of products for use in
semiconductor manufacturing processes.
46.
METHODS AND SYSTEMS FOR FEEDBACK CONTROL IN PLASMA PROCESSING USING RADICAL SENSING
An apparatus for feedback control in plasma processing systems using radical sensing, and a method for feedback control in plasma processing systems using radical sensing, the apparatus comprising at least one process gas supply system configured to output at least one process gas, at least one plasma source configured to receive the at least one process gas and generate at least one radical flow, at least one process chamber in communication with the at least one plasma source, wherein the process chamber receives the at least one radical flow and directs at least a portion of the at least one radical flow to one or more devices, the process chamber configured to output at least one process chamber output, at least one gas analyzer in communication with and configured to sample at least one of the at least one process gas, at least one radical flow, at least one radical flow within the at least one process chamber, and the at least one process chamber output, and at least one controller in communication with at least one of the process gas supply system, at least one plasma source, and at least one process chamber, the controller configured to generate at least one control signal based on data from the at least one gas analyzer and selectively control at least one of the process gas supply system, at least one plasma source, and at least one process chamber.
A power supply apparatus, comprising at least one circuit board having thereon at least a first single phase power factor controlled (PEC) circuit, and a second PEC corrected circuit, the first single phase PEC circuit and the second PEC corrected circuit each having at least one PEC device in communication with at least one inverter, at least one resonant (EC) circuit positioned on the at least one circuit board and in electrical communication with at least one of the first single phase PEC circuit and the second PEC corrected circuit, at least one transformer in communication with at least one of the first single phase PEC circuit and the second PEC corrected circuit via the at least one EC resonant circuit, the at least one transformer configured to generate at least one transformer output signal, and at least one capacitor in communication with the at least one transformer and configured to output at least one magnetron input signal in response to the at least one transformer output signal, and at least one power supply generating at least one three phase input voltage, the at least one circuit board in communication with the at least one power supply.
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
Systems and methods for detecting a composition of a binary gas mixture are provided. Such methods and systems include, with a species-dependent mass flow meter, sensing a mass flow rate of a binary gas mixture comprising gases of differing gas correction factors and, with a species-independent pressure sensor, sensing a total pressure of the binary gas mixture. An output representative of a relative concentration of one gas of the binary gas mixture is provided. The relative concentration is determined as a function of the sensed mass flow rate and the sensed total pressure.
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
G01F 1/88 - Indirect mass flowmeters, e.g. measuring volume flow and density, temperature, or pressure with differential-pressure measurement to determine the volume flow
Systems and methods for detecting a composition of a binary gas mixture are provided. Such methods and systems include, with a species-dependent mass flow meter, sensing a mass flow rate of a binary gas mixture comprising gases of differing gas correction factors and, with a species-independent pressure sensor, sensing a total pressure of the binary gas mixture. An output representative of a relative concentration of one gas of the binary gas mixture is provided. The relative concentration is determined as a function of the sensed mass flow rate and the sensed total pressure.
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
G01F 1/76 - Devices for measuring mass flow of a fluid or a fluent solid material
G01L 19/00 - MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE - Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
50.
Impedance matching in a RF power generation system
An impedance matching network including a mixing module. The mixing module receives a plurality admittances based upon at least one parameter sensed from an output which generated by an RF generator. The output signal is a pulsed RF signal having a plurality of states for each pulse and the plurality of admittances correspond to the plurality states. The mixing module generates a virtual admittance determined in accordance with the plurality of admittances adjusted by a gain. The impedance matching module receives the virtual admittance and generates a command to adjust a capacitance of the impedance matching network or a command to adjust a frequency of the output signal in accordance with the virtual admittance.
An impedance matching network including a mixing module. The mixing module receives a plurality admittances based upon at least one parameter sensed from an output which generated by an RF generator. The output signal is a pulsed RF signal having a plurality of states for each pulse and the plurality of admittances correspond to the plurality states. The mixing module generates a virtual admittance determined in accordance with the plurality of admittances adjusted by a gain. The impedance matching module receives the virtual admittance and generates a command to adjust a capacitance of the impedance matching network or a command to adjust a frequency of the output signal in accordance with the virtual admittance.
The present application discloses an apparatus for measuring the concentration of ozone within a fluid and includes a conduit defining at least one passage therein, the conduit has at least one reflective coating selective applied thereto and defining one or more transmission regions on the conduit, a multi-wavelength light source system having at least one light source configured to direct at least one optical signal having a first wavelength through an ozonated fluid within the conduit and at least one UV light source configured to direct at least one UV optical signal having a second wavelength band through the ozonated fluid wherein the optical signal and the UV optical signal traverse through the conduit along different optical paths via at least one reflection from the reflective coating applied to the conduit, and at least one detector positioned proximate to the transmission regions formed on the conduit and configured to detect the optical signal and the UV signal thereby permitting measurement of the concentration of ozone within an ozonated fluid.
The present application discloses an apparatus for measuring the concentration of ozone within a fluid and includes a conduit defining at least one passage therein, the conduit has at least one reflective coating selective applied thereto and defining one or more transmission regions on the conduit, a multi-wavelength light source system having at least one light source configured to direct at least one optical signal having a first wavelength through an ozonated fluid within the conduit and at least one UV light source configured to direct at least one UV optical signal having a second wavelength band through the ozonated fluid wherein the optical signal and the UV optical signal traverse through the conduit along different optical paths via at least one reflection from the reflective coating applied to the conduit, and at least one detector positioned proximate to the transmission regions formed on the conduit.
G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
G01N 21/33 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
A plasma-generation system is provided that includes a variable-frequency microwave generator configured to generate microwave power and a plasma applicator configured to use the microwave power from the microwave generator to (i) ignite a process gas therein for initiating a plasma in a plasma ignition process and (ii) maintain the plasma in a steady state process. The system also includes a coarse tuner connected between the microwave generator and the plasma applicator. At least one physical parameter of the coarse tuner is adapted to be set to achieve coarse impedance matching between the microwave generator and the plasma generated during both the plasma ignition process and the steady state process. A load impedance of the plasma generated during the plasma ignition process and the steady state process is adapted to vary. The microwave generator is configured to tune an operating frequency at the set physical parameter of the coarse tuner.
09 - Scientific and electric apparatus and instruments
Goods & Services
Industrial programmable computer hardware; plasma
generators; dissolved gas generation and delivery systems
(term considered too vague by the International Bureau -
Rule 13 (2) (b) of the Regulations); electronic control
equipment, namely, microprocessor based data communication
devices and data analytics devices.
56.
METHOD AND APPARATUS FOR IMPEDANCE MATCHING IN A POWER DELIVERY SYSTEM FOR REMOTE PLASMA GENERATION
A plasma-generation system is provided that includes a variable-frequency microwave generator configured to generate microwave power and a plasma applicator configured to use the microwave power from the microwave generator to (i) ignite a process gas therein for initiating a plasma in a plasma ignition process and (ii) maintain the plasma in a steady state process. The system also includes a coarse tuner connected between the microwave generator and the plasma applicator. At least one physical parameter of the coarse tuner is adapted to be set to achieve coarse impedance matching between the microwave generator and the plasma generated during both the plasma ignition process and the steady state process. A load impedance of the plasma generated during the plasma ignition process and the steady state process is adapted to vary. The microwave generator is configured to tune an operating frequency at the set physical parameter of the coarse tuner.
A RF generator includes a RF power source and a RF control module coupled to the RF power source. The RF control module is configured to generate at least one control signal to vary a respective at least one of an RF output signal from the RF power source or an impedance between the RF power source and a load. The RF output signal includes a RF signal modulated by a pulse signal, and the RF control module is further configured to adjust the at least one control signal to vary at least one of an amplitude or a frequency of the RF output signal or the impedance between the RF power source and the load to control a shape of the pulse signal. The at least one of the amplitude, the frequency, or the impedance is adjusted in accordance with respective feedforward adjustments that vary in accordance with a respective sensed pulse parameter detected between a matching network and the load.
A power supply system includes a RF generator, a matching network, and a control module. The matching network includes at least one mechanically variable impedance element and at least one electrically variable impedance element. The control module is coupled to the matching network and configured to generate one or more signals to adjust at least one of an impedance of the mechanically variable impedance element or an impedance of the electrically variable impedance element to vary an impedance match between the generator and a load. In other examples, a hybrid variable impedance module includes at least one mechanically variable impedance element, at least one electrically variable impedance element, and a control module. The control module is configured to generate one or more signals to adjust at least one of an impedance of the mechanically variable impedance element or an impedance of the electrically variable impedance element.
A power supply system includes a RF generator, a matching network, and a control module. The matching network includes at least one mechanically variable impedance element and at least one electrically variable impedance element. The control module is coupled to the matching network and configured to generate one or more signals to adjust at least one of an impedance of the mechanically variable impedance element or an impedance of the electrically variable impedance element to vary an impedance match between the generator and a load. In other examples, a hybrid variable impedance module includes at least one mechanically variable impedance element, at least one electrically variable impedance element, and a control module. The control module is configured to generate one or more signals to adjust at least one of an impedance of the mechanically variable impedance element or an impedance of the electrically variable impedance element.
A plasma source is provided that includes a body defining an input port, an output port, and at least one discharge section extending along a central longitudinal axis between the input port and the output port. The at least one discharge section includes a return electrode defining a first generally cylindrical interior volume having a first interior diameter, a supply plate comprising a supply electrode, the supply plate defining a second generally cylindrical interior volume having a second interior diameter, and at least one spacer defining a third generally cylindrical interior volume having a third interior diameter. The third interior diameter is different from the first or second interior diameter. The at least one discharge section is formed from the spacer arranged between the return electrode and the supply plate along the central longitudinal axis to define a generally cylindrical discharge gap for generating a plasma therein.
A RF generator includes a RF power source and a RF control module coupled to the RF power source. The RF control module is configured to generate at least one control signal to vary a respective at least one of an RF output signal from the RF power source or an impedance between the RF power source and a load. The RF output signal includes a RF signal modulated by a pulse signal, and the RF control module is further configured to adjust the at least one control signal to vary at least one of an amplitude or a frequency of the RF output signal or the impedance between the RF power source and the load to control a shape of the pulse signal. The at least one of the amplitude, the frequency, or the impedance is adjusted in accordance with respective feedforward adjustments that vary in accordance with a respective sensed pulse parameter detected between a matching network and the load.
A system and method provides a more precise mole delivery amount of a process gas, for each pulse of a pulse gas delivery, by measuring a concentration of the process gas and controlling the amount of gas mixture delivered in a pulse of gas flow based on the received concentration of the process gas. The control of mole delivery amount for each pulse can be achieved by adjusting flow setpoint, pulse duration, or both.
A plasma source is provided that includes a body defining an input port, an output port, and at least one discharge section extending along a central longitudinal axis between the input port and the output port. The at least one discharge section includes a return electrode defining a first generally cylindrical interior volume having a first interior diameter, a supply plate comprising a supply electrode, the supply plate defining a second generally cylindrical interior volume having a second interior diameter, and at least one spacer defining a third generally cylindrical interior volume having a third interior diameter. The third interior diameter is different from the first or second interior diameter. The at least one discharge section is formed from the spacer arranged between the return electrode and the supply plate along the central longitudinal axis to define a generally cylindrical discharge gap for generating a plasma therein.
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
A circuit board clamp includes a clamp frame having a first and second frame supports. The clamp frame also includes a top plate arranged between the first and second frame supports. The top plate supports a piston via a threaded fastener engaging a top plate aperture. The piston may be displaced relative to the top plate in accordance with adjustment of the threaded fastener. A pressure plate assembly has a pressure plate and a stem attached to the pressure plate. The stem is positioned within a tubular section of the piston, and the pressure plate is positioned opposite the circuit board from the heat sink. The pressure plate contacts a surface mounted integrated circuit between the circuit board and the pressure plate. A bias member is seated on the bias seat and applies a biasing force on the pressure plate.
37 - Construction and mining; installation and repair services
42 - Scientific, technological and industrial services, research and design
Goods & Services
Maintenance and repair of products for use in semiconductor manufacturing processes Product design and development in the field of semiconductor manufacturing processes, namely, design and development of components, subsystems and systems for generation, analysis, control, measurement and delivery of gases used under vacuum; design and testing for new product development of lasers, optics and opto-mechanic products for system level integration for laser beam creation, attenuation and delivery, laser beam profiling and measurement, specimen positioning and stabilization; product research and development in the field of power and reactive gas generation, vacuum measurement and control, gas creation and delivery, laser and photonics creation, delivery and measurement; calibration of products for use in semiconductor manufacturing processes
66.
METHODS AND APPARATUS FOR PRESSURE BASED MASS FLOW RATIO CONTROL
A system and method for dividing a single mass flow into secondary flows of desired ratios to total flow. Each secondary flow line includes a pressure drop element, an absolute pressure sensor and a differential pressure sensor. The nonlinear relationship between flow and pressures can be transformed into a function of the absolute and differential pressures that has a linear relationship with the flow.
A system and method for dividing a single mass flow into secondary flows of desired ratios to total flow. Each secondary flow line includes a pressure drop element, an absolute pressure sensor and a differential pressure sensor. The nonlinear relationship between flow and pressures can be transformed into a function of the absolute and differential pressures that has a linear relationship with the flow.
G01F 1/86 - Indirect mass flowmeters, e.g. measuring volume flow and density, temperature, or pressure
G01F 1/37 - Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure the pressure or differential pressure being created by the use of flow constriction the pressure or differential pressure being measured by means of communicating tubes or reservoirs with movable fluid levels, e.g. by U-tubes
G05D 7/06 - Control of flow characterised by the use of electric means
68.
Light-Enhanced Ozone Wafer Processing System and Method of Use
A light-enhanced wafer processing system disclosed herein which includes a rotatable chuck configured to support and selectively rotate at least one wafer, at least one dispenser body configured to selectively flow at least one photolytic material onto a surface of the wafer, and at least one optical radiation source may be configured to provide optical radiation to at least a portion of the wafer having photolytic material applied thereto, wherein the optical radiation is configured to result in the formation of optically-induced radicals having enhanced reactivity with at least one material applied to the wafer.
A light-enhanced wafer processing system disclosed herein which includes a rotatable chuck configured to support and selectively rotate at least one wafer, at least one dispenser body configured to selectively flow at least one photolytic material onto a surface of the wafer, and at least one optical radiation source may be configured to provide optical radiation to at least a portion of the wafer having photolytic material applied thereto, wherein the optical radiation is configured to result in the formation of optically-induced radicals having enhanced reactivity with at least one material applied to the wafer.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Semiconductor wafer processing equipment. Fiber optic temperature sensors; optical amplifiers;
temperature sensors; fiber optic temperature sensors using
fiber bragg gratings; fiber optic position sensors. Engineering, design and distribution of measurement
technology in the field of semiconductor industries;
research in the area of semiconductor processing technology;
technical consultancy in relation to methods and devices in
the field of semiconductor processing technology.
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Semiconductor wafer processing equipment. Fiber optic temperature sensors; optical amplifiers; temperature sensors; fiber optic temperature sensors using fiber bragg gratings; fiber optic position sensors. Engineering, design and distribution of measurement technology in the field of semiconductor industries; research in the area of semiconductor processing technology; technical consultancy in relation to methods and devices in the field of semiconductor processing technology.
09 - Scientific and electric apparatus and instruments
Goods & Services
Industrial programmable computer hardware; plasma generators; dissolved gas generation and delivery systems; electronic control equipment, namely, microprocessor based data communication devices and data analytics devices.
42 - Scientific, technological and industrial services, research and design
Goods & Services
Installation services, set-up and troubleshooting services,
application development and support services, design and
development services, and maintenance, repair and
calibration services in the field of printed circuit board
and advanced electronics packaging interconnect creation and
evaluation.
74.
MICROWAVE SYSTEM FOR MICROWAVE-ASSISTED SURFACE CHEMISTRY ANNEALING OF ALD PROCESSES UTILIZING MICROWAVE RADIATION ENERGY
A microwave system for use within a microwave-assisted thermal atomic layer deposition system is disclosed which include at least one microwave generator configured to output at least one microwave signal, at least one waveguide assembly in communication with the at least one microwave generator and configured to receive the microwave signal, one or more isolators positioned within the waveguide assembly and configured to reduce or eliminate backscatter of the microwave signal from the waveguide assembly to the at least one microwave generator, at least one tuning device in positioned within the waveguide assembly and configured receive the microwave signal from the isolator and tune the microwave signal, and at least one microwave delivery device in communication with the waveguide assembly and configured to direct at least a portion of the microwave signal into at least one processing chamber of the microwave-assisted thermal atomic layer deposition system.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
A microwave system for use within a microwave-assisted thermal atomic layer deposition system is disclosed which include at least one microwave generator configured to output at least one microwave signal, at least one waveguide assembly in communication with the at least one microwave generator and configured to receive the microwave signal, one or more isolators positioned within the waveguide assembly and configured to reduce or eliminate backscatter of the microwave signal from the waveguide assembly to the at least one microwave generator, at least one tuning device in positioned within the waveguide assembly and configured receive the microwave signal from the isolator and tune the microwave signal, and at least one microwave delivery device in communication with the waveguide assembly and configured to direct at least a portion of the microwave signal into at least one processing chamber of the microwave-assisted thermal atomic layer deposition system.
C23C 16/511 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges using microwave discharges
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
A load lock pressure gauge comprises a housing configured to be coupled to a load lock vacuum chamber. The housing supports an absolute vacuum pressure sensor that provides instantaneous high vacuum pressure signal over a range of high vacuum pressures and a differential diaphragm pressure sensor that provides an instantaneous differential pressure signal between load lock pressure and ambient pressure. The housing further supports an absolute ambient pressure sensor. A low vacuum absolute pressure is computed from the instantaneous differential pressure signal and the instantaneous ambient pressure signal. A controller in the housing is able to recalibrate the differential diaphragm pressure sensor based on measured voltages of the sensor and a measured ambient pressure during normal operation of the pressure gauge with routine cycling of pressure in the load lock.
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
G01L 13/02 - Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
G01L 19/08 - Means for indicating or recording, e.g. for remote indication
A load lock pressure gauge comprises a housing configured to be coupled to a load lock vacuum chamber. The housing supports an absolute vacuum pressure sensor that provides instantaneous high vacuum pressure signal over a range of high vacuum pressures and a differential diaphragm pressure sensor that provides an instantaneous differential pressure signal between load lock pressure and ambient pressure. The housing further supports an absolute ambient pressure sensor. A low vacuum absolute pressure is computed from the instantaneous differential pressure signal and the instantaneous ambient pressure signal. A controller in the housing is able to recalibrate the differential diaphragm pressure sensor based on measured voltages of the sensor and a measured ambient pressure during normal operation of the pressure gauge with routine cycling of pressure in the load lock.
G01L 27/00 - Testing or calibrating of apparatus for measuring fluid pressure
G01L 13/02 - Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
G01L 9/12 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance
G01L 21/12 - Vacuum gauges by measuring variations in the heat conductivity of the medium, the pressure of which is to be measured measuring changes in electric resistance of measuring members, e.g. of filaments; Vacuum gauges of the Pirani type
G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
78.
Multi-sensor gas sampling detection system for radical gases and short-lived molecules and method of use
The present application is directed to a method of measuring the concentration of radicals in a gas stream which includes the steps of flowing a radical gas stream emitted from at least one radical gas generator to at least one processing chamber, providing at least one sampling reaction module having at least one sampling tube therein, establishing a reference temperature of the sampling tube with at least one thermal control module, diverting a portion of the radical gas steam from the radical gas generator into the sampling tube, reacting at least one reagent with at least one radical gas within a defined volume of the radical gas stream thereby forming at least one chemical species within at least one compound stream, the compound stream flowing within the sampling tube, measuring a change of temperature of the sampling tube due to interaction of the chemical species within the compound stream and the sampling tube with sensor module, and calculating a concentration of the chemical species within the compound stream flowing within the sampling tube based on the measured temperature change of the sampling tube.
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
G01K 17/06 - Measuring quantity of heat conveyed by flowing media, e.g. in heating systems
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
G01N 21/3504 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
79.
MONITORING RADICAL PARTICLE CONCENTRATION USING MASS SPECTROMETRY
A monitoring system detects and measures a quantity of radical particles within a gas. A test chamber is coupled to a flow channel that transmits a gas. The test chamber defines an aperture connecting the test chamber and the flow channel, and the aperture permits a subset of the gas to enter the test chamber from the flow channel. An ionizer is positioned within the test chamber and generates radical ions from radical particles of the subset of the gas. A mass spectrometer measures a quantity of the radical ions, thereby providing a measurement of the radical particles in the gas.
A monitoring system detects and measures a quantity of radical particles within a gas. A test chamber is coupled to a flow channel that transmits a gas. The test chamber defines an aperture connecting the test chamber and the flow channel, and the aperture permits a subset of the gas to enter the test chamber from the flow channel. An ionizer is positioned within the test chamber and generates radical ions from radical particles of the subset of the gas. A mass spectrometer measures a quantity of the radical ions, thereby providing a measurement of the radical particles in the gas.
09 - Scientific and electric apparatus and instruments
Goods & Services
Industrial programmable computer hardware; plasma generators for supplying activated gases; dissolved gas generation and delivery systems comprised of apparatus for supplying gases dissolved in fluids used in manufacturing processes; electronic control equipment, namely, microprocessor based data communication devices and data analytics devices for automation control and process monitoring applications
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
SEMICONDUCTOR WAFER PROCESSING EQUIPMENT FIBER OPTIC TEMPERATURE SENSORS; OPTICAL AMPLIFIERS; TEMPERATURE SENSORS; FIBER OPTIC TEMPERATURE SENSORS USING FIBER BRAGG GRATINGS; FIBER OPTIC POSITION SENSORS Engineering and design of measurement technology in the field of semiconductor industries; research in the area of semiconductor processing technology; technical consultancy in relation to the engineering methods and use of devices in the field of semiconductor processing technology
A switched capacitor modulator (SCM) includes a RF power amplifier. The RF power amplifier receives a rectified voltage and a RF drive signal and modulates an input signal in accordance with the rectified voltage to generate a RF output signal to an output terminal. A reactance in parallel with the output terminal is configured to vary in response to a control signal to vary an equivalent reactance in parallel with the output terminal. A controller generates the control signal and a commanded phase. The commanded phase controls the RF drive signal. The reactance is at least one of a capacitance or an inductance, and the capacitance or the inductance varies in accordance with the control signal.
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H03F 3/24 - Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
H03F 1/56 - Modifications of input or output impedances, not otherwise provided for
H03F 3/00 - Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
H03F 3/195 - High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
H03F 1/02 - Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
A switched capacitor modulator (SCM) includes a RF power amplifier. The RF power amplifier receives a rectified voltage and a RF drive signal and modulates an input signal in accordance with the rectified voltage to generate a RF output signal to an output terminal. A reactance in parallel with the output terminal is configured to vary in response to a control signal to vary an equivalent reactance in parallel with the output terminal. A controller generates the control signal and a commanded phase. The commanded phase controls the RF drive signal. The reactance is at least one of a capacitance or an inductance, and the capacitance or the inductance varies in accordance with the control signal.
G06F 1/03 - Digital function generators working, at least partly, by table look-up
H02M 3/07 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
85.
APPARATUS AND TUNING METHOD FOR MITIGATING RF LOAD IMPEDANCE VARIATIONS DUE TO PERIODIC DISTURBANCES
A radio frequency (RF) power generation system includes a RF power source that generates a RF output signal delivered to a load. A RF power controller is configured to generate a control signal to vary the RF output signal. The controller adjusts a parameter associated with the RF output signal, and the parameter is controlled in accordance with a trigger signal. The parameter is adjusted in accordance with a cost function, and the cost function is determined by intruding a perturbation into an actuator that affects the cost function. The actuator may control an external RF output signal, and the trigger signal may vary in accordance with the external RF output signal.
Pulsed gas delivery is obtained with mass flow control using a thermal mass flow sensor and control valve. The controller is augmented for pressure control with a downstream pressure sensor. In separate control modes of operation, the control valve is controlled in response to the flow sensor during pulse gas delivery mode and controlled in response to the downstream pressure sensor during pressure control mode of operation.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
87.
Apparatus and tuning method for mitigating RF load impedance variations due to periodic disturbances
A radio frequency (RF) power generation system includes a RF power source that generates a RF output signal delivered to a load. A RF power controller is configured to generate a control signal to vary the RF output signal. The controller adjusts a parameter associated with the RF output signal, and the parameter is controlled in accordance with a trigger signal. The parameter is adjusted in accordance with a cost function, and the cost function is determined by intruding a perturbation into an actuator that affects the cost function. The actuator may control an external RF output signal, and the trigger signal may vary in accordance with the external RF output signal.
Pulsed gas delivery is obtained with mass flow control using a thermal mass flow sensor and control valve. The controller is augmented for pressure control with a downstream pressure sensor. In separate control modes of operation, the control valve is controlled in response to the flow sensor during pulse gas delivery mode and controlled in response to the downstream pressure sensor during pressure control mode of operation.
B05B 12/06 - Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery for effecting pulsating flow
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
37 - Construction and mining; installation and repair services
42 - Scientific, technological and industrial services, research and design
Goods & Services
Installation, set-up, maintenance and repair services of equipment used in the production of printed circuit boards and advanced electronics packaging interconnects Calibration services in the fields of printed circuit boards and advanced electronics packaging interconnects; troubleshooting services in the nature of diagnosing problems with equipment used in the production of printed circuit boards and advanced electronics packaging interconnects
90.
Thermal conductivity pressure gauge with heated chamber wall
A Process Critical Thermal Conductivity Gauge (PCTCG) instrument relies on gauge chamber wall above-ambient-temperature-control (AATC) to provide improved accuracy and thermal stability with reduced and linearized temperature coefficients. A sensor resistor is exposed to gas pressure in a gauge chamber. AATC is provided by control of a heater that heats a chamber wall to control temperature difference between the sensor resistor and chamber wall. An example application of this technology is to end-point detection in lyophilization where the TCG is used to track partial pressures of water in binary gas mixtures.
G01L 21/12 - Vacuum gauges by measuring variations in the heat conductivity of the medium, the pressure of which is to be measured measuring changes in electric resistance of measuring members, e.g. of filaments; Vacuum gauges of the Pirani type
G01L 21/14 - Vacuum gauges by measuring variations in the heat conductivity of the medium, the pressure of which is to be measured using thermocouples
G01L 11/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group or
A Process Critical Thermal Conductivity Gauge (PCTCG) instrument relies on gauge chamber wall above-ambient-temperature-control (AATC) to provide improved accuracy and thermal stability with reduced and linearized temperature coefficients. A sensor resistor is exposed to gas pressure in a gauge chamber. AATC is provided by control of a heater that heats a chamber wall to control temperature difference between the sensor resistor and chamber wall. An example application of this technology is to end-point detection in lyophilization where the TCG is used to track partial pressures of water in binary gas mixtures.
G01L 11/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group or
G01L 21/12 - Vacuum gauges by measuring variations in the heat conductivity of the medium, the pressure of which is to be measured measuring changes in electric resistance of measuring members, e.g. of filaments; Vacuum gauges of the Pirani type
A gas delivery system and associated method includes a flow channel, a control valve, a downstream pressure sensor, and a controller. The control valve controls flow of gas in the flow channel. The downstream pressure sensor, located downstream of the control valve, measures gas pressure in the flow channel. The controller has an external trigger input to receive a trigger signal applied to a shutoff valve downstream from the control valve. The controller operates in separate modes based on a state of the trigger signal. In a non-triggered mode, the controller controls pressure at the pressure sensor via the control valve in accordance with a first gain schedule. In the triggered mode, the controller controls the pressure at the pressure sensor via the control valve in accordance with a second gain schedule that is distinct from the first gain schedule.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A gas delivery system and associated method includes a flow channel, a control valve, a downstream pressure sensor, and a controller. The control valve controls flow of gas in the flow channel. The downstream pressure sensor, located downstream of the control valve, measures gas pressure in the flow channel. The controller has an external trigger input to receive a trigger signal applied to a shutoff valve downstream from the control valve. The controller operates in separate modes based on a state of the trigger signal. In a non-triggered mode, the controller controls pressure at the pressure sensor via the control valve in accordance with a first gain schedule. In the triggered mode, the controller controls the pressure at the pressure sensor via the control valve in accordance with a second gain schedule that is distinct from the first gain schedule.
G05D 16/20 - Control of fluid pressure characterised by the use of electric means
G01F 15/00 - MEASURING VOLUME, VOLUME FLOW, MASS FLOW, OR LIQUID LEVEL; METERING BY VOLUME - Details of, or accessories for, apparatus of groups insofar as such details or appliances are not adapted to particular types of such apparatus
G05D 7/06 - Control of flow characterised by the use of electric means
94.
Intermodulation distortion mitigation using electronic variable capacitor
A matching network for a system having a non-linear load and powered by a first RF power supply operating at a first frequency and a second RF power supply operating at a second frequency. The matching network includes a first matching network section for providing an impedance match between the first power supply and the load. The matching network also includes a second matching network section for providing an impedance match between the second power supply and the load. The first matching network section includes a first variable reactance, and the variable reactance is controlled in accordance with IMD sensed in the signal applied to the load by the first RF power supply. The variable reactance is adjusted in accordance with the IMD to reduce the detected IMD.
A method is provided for cleaning of a processing system comprising a wafer processing chamber and a pumping line in fluid connection with the wafer processing chamber. The method includes initiating cleaning of the wafer processing chamber by activating a chamber cleaning source and initiating cleaning of at least a portion of the pumping line by activating a foreline cleaning source coupled to the pumping line. The method also includes monitoring, at a downstream endpoint detector coupled to the pumping line, a level of a signature substance. The method further includes determining, by the downstream endpoint detector, at least one of a first endpoint of the cleaning of the wafer processing chamber or a second endpoint of the cleaning of the pumping line based on the monitoring.
B08B 9/027 - Cleaning the internal surfaces; Removal of blockages
G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
B08B 13/00 - Accessories or details of general applicability for machines or apparatus for cleaning
B08B 9/46 - Inspecting cleaned containers for cleanliness
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
A method is provided for cleaning of a processing system comprising a wafer processing chamber and a pumping line in fluid connection with the wafer processing chamber. The method includes initiating cleaning of the wafer processing chamber by activating a chamber cleaning source and initiating cleaning of at least a portion of the pumping line by activating a foreline cleaning source coupled to the pumping line. The method also includes monitoring, at a downstream endpoint detector coupled to the pumping line, a level of a signature substance. The method further includes determining, by the downstream endpoint detector, at least one of a first endpoint of the cleaning of the wafer processing chamber or a second endpoint of the cleaning of the pumping line based on the monitoring.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
97.
High speed synchronization of plasma source/bias power delivery
A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of the second RF signal. The application of the first RF signal is synchronized to application of the second RF signal. The first RF signal may be amplitude modulated in synchronization with the second RF signal, and the amplitude modulation can include blanking of the first RF signal. A frequency offset may be applied to the first RF signal in synchronization with the second RF signal. A variable actuator associated with the first RF power source may be controlled in accordance with the second RF signal.
An arc detector for a RF power supply system, where the RF power supply incudes a first RF power supply and a second RF power supply. A signal applied to a non-linear load varies in accordance with an output from one of the first RF power supply or the second RF power supply. The signal has a frequency. During an arc or arc condition in the non-linear load, the frequency of the signal changes, and if the frequency is outside of a selected range, an arc or arc condition is indicated. The frequency can be determined by digitizing the signal into a series of pulses and measuring a time or period between pulses.
An arc detector for a RF power supply system, where the RF power supply incudes a first RF power supply and a second RF power supply. A signal applied to a non-linear load varies in accordance with an output from one of the first RF power supply or the second RF power supply. The signal has a frequency. During an arc or arc condition in the non-linear load, the frequency of the signal changes, and if the frequency is outside of a selected range, an arc or arc condition is indicated. The frequency can be determined by digitizing the signal into a series of pulses and measuring a time or period between pulses.
An isolation valve assembly including a valve body having an inlet and an outlet. The isolation valve includes a seal plate disposed within an interior cavity of the valve body. The seal plate is movable between a first position allowing gas flow from the inlet to the outlet, and a second position preventing gas flow from the inlet to the outlet. The isolation valve includes a closure element disposed within the valve body. The closure element is configured to retain the seal plate stationary in the first position or the second position. The closure element includes a first sealing element positioned adjacent to a first surface of the seal plate. A working surface of the first sealing element is substantially obscured from the gas flow when the seal plate is stationary.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges
F16K 3/18 - Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing faces; Packings therefor with special arrangements for separating the sealing faces or for pressing them together by movement of the closure members
F16K 51/02 - Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
