This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures with fluoride passivation. The disclosure also provides methods of preparing nanostructures with fluoride and amine passivation. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
The invention is in the field of nanostructure synthesis. Provided are highly luminescent core/shell nanostructures with zinc fluoride and zinc acetate bound to their surface. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Embodiments of a display device are described. A display device includes a substrate (204) and a sub-pixel (R1, R2) configured to emit a display light having an emission spectrum with a first peak wavelength and a second peak wavelength. The sub-pixel includes a microLED (218) disposed on the substrate and a NS-based CC layer (220) disposed on the microLED. The NS-based CC layer includes QDs configured to emit a first light having the first peak wavelength. The microLED is configured to emit a second light having the second peak wavelength. A first portion of the second light is absorbed by the QDs and down-converted to the first light and a second portion of the second light is transmitted through the NS-based CC layer (220).
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
The present invention is in the field of nanostructures. Provided herein are microparticles comprising nanostructures and silica. Also provided herein are methods of preparing the microparticles, films comprising the microparticles, and devices comprising the microparticles. Also provided herein are display backlighting units (BLUs) that do not comprise a barrier layer.
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
5.
APPARATUS AND METHOD FOR TRANSFERRING LIGHT-EMITTING DIODES
A method includes placing a work piece in an apparatus containing first support structure and a second support structure such that the work piece is located between the first support structure and the second support structure, generating a pressure on a portion of the work piece by actuating a movable member that presses on the work piece from a first side of the work piece to generate a first force on a first side of the work piece that presses a second side of the work piece against an optically transparent mechanical stop, and directing laser radiation through the optically transparent mechanical stop to irradiate the portion of the work piece.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
Provided are patterned films comprising nanostructures and one or more UV-cured monomers wherein the nanostructure films comprise between about 60 wt% and about 95 wt% nanostructures. Also provide are methods of making the patterned films, and electroluminescent devices comprising the patterned films.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of forming light emitting diodes includes forming a first-conductivity-type compound semiconductor layer over a substrate, etching the first-conductivity-type compound semiconductor layer to form a first pillar structure and a second pillar structure without exposing the substrate between the first and the second pillar structures, selectively growing a semiconductor active layer over the first and the second pillar structures, and selectively growing a second-conductivity-type compound semiconductor layer on the semiconductor active layer.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
8.
LIGHT EMITTING DEVICE WITH IMPROVED RADIATION DISTRIBUTION AND METHOD OF MAKING THEREOF
A light emitting device includes a substrate, a plurality of light emitting diodes located over the substrate, and a plurality of micro-lenses. Each of the plurality of micro-lenses is located over a respective one of the plurality of light emitting diodes. Each of the plurality of micro-lenses has a first symmetry axis, each of the plurality of light emitting diodes has a second symmetry axis, and at least some of the plurality of micro-lenses have the first symmetry axis which is laterally displaced relative to the second symmetry axis of the respective one of the plurality of light emitting diodes.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A light emitting device includes a first optical cavity bounded by cavity walls, a first light emitting diode located in the first optical cavity and configured to emit blue or ultraviolet radiation first incident photons, a first color conversion material located over the first light emitting diode and configured to absorb the first incident photons emitted by the light emitting diode and to generate first converted photons having a longer peak wavelength than a peak wavelength of the first incident photons, and a first color selector located over the first color conversion material and configured to absorb or reflect the first incident photons and to transmit the first converted photons.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A light emitting device includes a backplane, first, second and third light emitting diodes located on the backplane, a first patterned metamaterial lens containing first nanostructures located over the first light emitting diode, a second patterned metamaterial lens containing second nanostructures located over the second light emitting diode, and a third patterned metamaterial lens containing third nanostructures located over the light emitting diode. A configuration of the first nanostructures differs from a configuration of the second nanostructures, and a configuration of the third nanostructures differs from the configurations of the first and the second nanostructures.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A light emitting device includes a light emitting diode configured to emit blue or ultraviolet radiation incident photons, a color conversion material located over the light emitting diode and configured to absorb the incident photons emitted by the light emitting diode and to generate converted photons having a longer peak wavelength than a peak wavelength of the incident photons, and at least one light extracting feature located between the light emitting diode and the color conversion material.
A method of forming a light emitting device includes forming a first doped compound semiconductor layer over a substrate, forming an active layer over the first doped compound semiconductor layer, forming a second doped compound semiconductor layer over the active layer, forming a patterned ion implantation mask layer, and implanting ions of at least one electrically inactive dopant species in portions of the active layer that are not masked by the patterned ion implantation mask layer. An electrically inactive insulating region including a semiconductor material and atoms of the at least one electrically inactive dopant species is formed. Unimplanted portions of the active layer constitute active regions of an array of light emitting diodes.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/56 - Materials, e.g. epoxy or silicone resin
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
An illumination device, a method of operating the illumination device, and a display device are disclosed. The illumination device may include a control circuit configured to determine a set of signals based on a target color temperature. Further, the illumination device may include at least two types of light emitting diodes (LEDs) configured to emit source lights based on the set of signals. Further still, the illumination device may include a housing having a phosphor coating with multiple luminescent nanostructures configured to emit, based on the source lights, an output light corresponding to the target color temperature.
F21V 3/08 - GlobesBowlsCover glasses characterised by materials, surface treatments or coatings characterised by the material the material comprising photoluminescent substances
G09G 3/34 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source
14.
APPARATUS AND METHOD FOR TRANSFERRING LIGHT-EMITTING DIODES
An apparatus for transferring light-emitting diodes (LEDs) includes a backing board for supporting a backplane, a sealing member formed on the backing board around a periphery of the backplane, a transparent panel formed on the sealing member such that a space is formed between the backing board and the transparent panel, and a vacuum source for drawing a vacuum on the space.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Disclosed are stable films comprising Ag, In, Ga, and S (AIGS) nanostructures, one or more metal alkoxides, one or more metal alkoxide hydrolysis products, one or more metal halides, one or more metal halide hydrolysis products, one or more organometallic compounds, or one or more organometallic hydrolysis products, or combinations thereof, and at least one ligand bound to the nanostructures. In some embodiments, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm. In some embodiments, the nanostructures have a photon conversion efficiency (PCE) of at least 30% after being stored for 24 hours under yellow light and air storage conditions.
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
16.
LIGHT-EMITTING DIODE DEVICE CONTAINING MICROLENSES AND METHOD OF MAKING THE SAME
A light-emitting device includes a backplane, light-emitting diodes (LEDs) located over a front side of the backplane, and microlenses respectively disposed over the LEDs. Each microlens includes a back surface having a first surface area and configured to receive light emitted from a corresponding LED, an opposing front surface having a second surface area and configured to emit the received light, and at least one sidewall extending from the front surface to the back surface. The second surface area is greater than the first surface area.
Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24- 38 nm.
C09K 11/62 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing gallium, indium or thallium
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
C01G 15/00 - Compounds of gallium, indium, or thallium
18.
ELECTROLUMINESCENT DEVICES WITH ORGANIC TRANSPORT LAYERS
Embodiments of an electroluminescent device are described. The electroluminescent device includes a substrate, a first electrode disposed on the substrate, a first transport layer disposed on the first electrode, an emission layer having luminescent nanostructures disposed on the first transport layer, a second transport layer having an organic layer, and a second electrode disposed on the second transport layer. A first portion of the organic layer is disposed on the emission layer and a second portion of the organic layer is disposed on the first transport layer.
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
19.
ELECTROLUMINESCENT DEVICES WITH HYBRID TRANSPORT LAYERS
Embodiments of an electroluminescent device are described. The electroluminescent device includes a substrate, a first electrode disposed on the substrate, an emission layer comprising luminescent nanostructures disposed on the first electrode, a hybrid transport layer disposed on the emission layer, and a second electrode disposed on the hybrid transport layer. The hybrid transport layer includes an organic layer and inorganic nanostructures disposed within the organic layer. The luminescent nanostructures are separated from the inorganic nanostructures by the organic layer.
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
20.
THERMALLY STABLE POLYTHIOL LIGANDS WITH PENDANT SOLUBILIZING MOIETIES
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising polythiol ligands with pendant moieties. The polythiol ligand with pendant moieties increase the solubility of the nanostructures in solvents and resins. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.
The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core/shell and a thin metal oxide on the outer shell of the nanostructure. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.
A method includes transferring a first subset of the first LEDs from a first substrate to a first backplane to form first subpixels in pixel regions, transferring a first subset of the second LEDs to a second backplane and separating the first subset of the second LEDs from a second substrate to leave first vacancies on the second substrate, forming an additional electrically conductive material on a second subset of second LEDs located on the second substrate after transferring the first subset of the second LEDs to the second backplane, positioning the second substrate over the first backplane, such that the first subpixels are disposed in the first vacancies, and transferring the second subset of the second LEDs to a second subset of bonding structures on the first backplane to form second subpixels in the pixel regions, while a gap exists between the first subpixels and the second substrate.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
23.
BLUE-EMITTING NANOCRYSTALS WITH CUBIC SHAPE AND GROUP IV METAL FLUORIDE PASSIVATION
This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using a Group IV metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
ROSH compliant mixed quantum dot films are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
G02F 1/00 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising donor-acceptor ligands. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
26.
NANOSTRUCTURE INK COMPOSITIONS FOR INKJET PRINTING
The invention pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one organic solvent; (b) at least one population of nanostructures comprising a core and at least one shell, wherein the nanostructures comprise inorganic ligands bound to the surface of the nanostructures; and (c) at least one poly(alkylene oxide) additive. The nanostructure compositions comprising at least one poly(alkylene oxide) additive show improved solubility in organic solvents. And, the nanostructure compositions show increased suitability for use in inkjet printing. The disclosure also provides methods of producing emissive layers using the nanostructure compositions.
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
27.
x ALLOY NANOCRYSTALS WITH LOW FULL WIDTH AT HALF-MAXIMUM
1-xx1-xxx core and ZnS and/or ZnSe shell layers display a low full width at half-maximum and a high quantum yield. The invention also provides methods of producing the nanostructures.
The invention is in the field of nanostructure synthesis. Provided are highly luminescent core/ shell nanostructures with zinc fluoride and zinc acetate bound to their surface. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.
This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures with fluoride passivation. The disclosure also provides methods of preparing nanostructures with fluoride and amine passivation. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
C09K 11/62 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing gallium, indium or thallium
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
31.
METHOD FOR STABILIZATION OF ZINC OXIDE NANOPARTICLES
This invention pertains to the field of nanotechnology. The invention relates to nanoparticles comprising zinc oxide treated with a silane compound. The nanoparticles comprising zinc oxide functionalized with silane compounds show improved stability. And, quantum dot light emitting diodes prepared using nanoparticles comprising zinc oxide functionalized with silane compounds in the electron transport layer show improved per-formance. The invention also relates to methods of producing nanoparticles comprising zinc oxide functionalized with silane compounds.
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
32.
NANOSTRUCTURE BASED DISPLAY DEVICES WITH IMPROVED LIGHT EXTRACTION EFFICIENCY
Embodiments of a display device are described. A display device includes a backlight unit having a light source and a liquid crystal display (LCD) module. The LCD module includes a nanostructure-based color conversion (NS-based CC) layer and a light extraction layer. The NS-based CC layer is configured to receive a primary light, from the light source, having a first peak wavelength and to convert a portion of the primary light to emit a first portion of a secondary light having a second peak wavelength. The second peak wavelength is different from the first peak wavelength. The light extraction layer is optically coupled to the NS-based CC layer and is configured to prevent total internal reflection of a second portion of the secondary light. The light extraction layer has patterned features with one or more dimension in nanometer scale.
in situ in situ prepared zinc dioleate and/or a metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
Embodiments of a flexible electroluminescent (FEE) device are described. An FEE device includes a device stack with a quantum dot (QD) film configured to generate a first light having a first peak wavelength and a flexible substrate configured to support the device stack and emit a first portion of the first light. The FEE device further includes an encapsulation layer disposed on the device stack and an outcoupling layer disposed on the flexible substrate. The encapsulation layer can be configured to provide mechanical and environmental protection to the FEE device from moisture or oxygen. The outcoupling layer can be configured to prevent total internal reflection of a second portion of the first light within the flexible substrate and extract the second portion from the flexible substrate. The outcoupling layer can be further configured to eliminate air gaps at an interface between the outcoupling layer and a surface to be illuminated by the extracted second portion in response to the FEE device being substantially conformally placed on the surface.
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
35.
METHODS FOR SYNTHESIS OF INORGANIC NANOSTRUCTURES USING MOLTEN SALT CHEMISTRY
The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and at least two thin shell layers. The nanostructures may have additional shell layers. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.
The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and at least two thin shell layers. The nanostructures may have additional shell layers. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.
C07D 519/00 - Heterocyclic compounds containing more than one system of two or more relevant hetero rings condensed among themselves or condensed with a common carbocyclic ring system not provided for in groups or
39.
INCREASING COLOR GAMUT PERFORMANCE AND EFFICIENCY IN QUANTUM DOT COLOR CONVERSION LAYERS
Embodiments of a display device are described. The display device includes a liquid crystal display (LCD) module and a backlight unit designed to emit a primary light in a first wavelength region of an electromagnetic (EM) spectrum. The LCD module includes an array of pixels having at least one pixel with a sub-pixel that includes a layer of luminescent nanostructures and a layer of fluorescent material. The layer of luminescent nanostructures absorbs the primary light and emits a second light in a second wavelength region of the EM spectrum different from the first wavelength region. The layer of fluorescent material absorbs the primary light that has passed through the layer of luminescent nanostructures, and emits a third light in the second wavelength region of the EM spectrum.
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising charge-transporting ligands. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
41.
METHODS OF IMPROVING EFFICIENCY OF DISPLAYS USING QUANTUM DOTS WITH INTEGRATED OPTICAL ELEMENTS
A display device is provided having a quantum dot formed directly on a surface or substrate of a backlight unit, without requiring an intervening layer. An optically transmissive layer is formed thereon. The quantum dot film may be provided that includes a population of optical features to permit the omission of additional films, such as a separate optical film. A population of optical features may include a population of embedded microspheres to achieve optical effects, to improve the overall thickness uniformity of the quantum dot film, or both. Additionally or alternatively, the quantum dot film may be provided having optical features embossed thereon, such as reflective and/or refractive features, prisms, grooves, grooved prisms, lenticular lenses, micro-lenses, micro- spheres, any other lenses, pitches, or other suitable brightness enhancement and/or optical features. Thereby, a separate optical film may be omitted from the overall device structure.
Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.
C09K 11/62 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing gallium, indium or thallium
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
H01B 1/08 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances oxides
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
43.
DECREASED PHOTON REABSORPTION IN EMISSIVE QUANTUM DOTS
The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and a thin inner shell layer. The nanostructures may have an additional outer shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising polyfunctional poly(alkylene oxide) ligands. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.
Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and thick shells of ZnSe and ZnS, are provided. The nanostructures may have one or more gradient ZnSexS1-x monolayers between the ZnSe and ZnS shells, wherein the value of x decreases gradually from the interior to the exterior of the nanostructure. Also provided are methods of preparing the nanostructures comprising a high temperature synthesis method. The thick shell nanostructures of the present invention display increased stability and are able to maintain high levels of photoluminescent intensity over long periods of time. Also provided are nanostructures with increased blue light absorption.
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
B82Y 40/00 - Manufacture or treatment of nanostructures
C09K 11/62 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing gallium, indium or thallium
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
A display device includes a backlight unit having a light source and a liquid crystal display (LCD) module. The light source is configured to emit a primary light in a first wavelength region. The LCD module includes a pixel having a first, second, and third subpixels. The first sub-pixel includes a first emissive surface configured to emit a first light in a second wavelength region. The second sub-pixel includes a second emissive surface configured to emit a second light in a third wavelength region. The third sub-pixel includes a third emissive surface configured to emit a third light in the first wavelength region. The third luminance is greater than the first luminance and the second luminance. An area of the third emissive surface is smaller than an area of the first emissive surface and an area of the second emissive surface.
G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
47.
USING MULTIPLE EXCITATION WAVELENGTHS IN NANOSTRUCTURE BASED DISPLAY DEVICES
Embodiments of a display device are described. The display device includes a first subpixel with a first quantum dot (QD) film and a first filter element. The QD film receives both UV light and blue light and converts a portion of the received light to emit a secondary light different from the UV and blue light. The filter element is disposed on the quantum dot film and allows the secondary light to pass through the filter element, and the filter element blocks an unconverted portion of the received light from passing through the filter element. The second sub-pixel has a second filter element that allows blue light to pass through the second filter element, and the second filter element blocks the UV light from passing through the second filter element.
Embodiments of a display device are described. A display device includes a backlight unit having a light source and a liquid crystal display (LCD) module. The LCD module includes a phosphor film and a filter element. The phosphor film is configured to receive a primary light, from the light source, having a first peak wavelength and to convert a portion of the primary light to emit a secondary light having a second peak wavelength. The second peak wavelength is different from the first peak wavelength. The filter element is optically coupled to the phosphor film and is configured to allow the secondary light to pass through the filter element and to block an unconverted portion of the primary light from passing through the filter element.
G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
49.
PEG-BASED LIGANDS WITH ENHANCED DISPERSIBILITY AND IMPROVED PERFORMANCE
The present disclosure provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise at least one population of nanostructures, at least one poly(alkylene oxide) ligand bound to the surface of the nanostructures, and optionally at least one organic resin. The present disclosure also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.
C08G 65/332 - Polymers modified by chemical after-treatment with organic compounds containing oxygen containing carboxyl groups, or halides or esters thereof
C08G 65/333 - Polymers modified by chemical after-treatment with organic compounds containing nitrogen
50.
THIOLATED HYDROPHILIC LIGANDS FOR IMPROVED QUANTUM DOT RELIABILITY IN RESIN FILMS
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising thiol-functionalized ligands to increase the stability of the composition in thiol resins. The present invention also provides nanostructure films comprising a population of nanostructures comprising thiol-functionalized ligands and methods of making nanostructure films using these nanostructures.
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures, a stabilization additive, and an organic resin. The present invention also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.
The present invention provides quantum dot compositions and methods of producing quantum dot compositions. The quantum dot compositions comprise a population of quantum dots, a siloxane polymer, an emulsification additive, and an organic resin. The present invention also provides quantum dot films comprising a quantum dot layer and methods of making quantum dot films.
The present invention provides quantum dot compositions and methods of producing quantum dot compositions. The quantum dot compositions comprise a population of quantum dots, an aminosilicone polymer, an epoxy-functional silicone, and an organic resin. The present invention also provides quantum dot films comprising a quantum dot layer and methods of making quantum dot films.
Illumination devices based on quantum dot technology and methods of making such devices are described. An illumination device includes a substrate having a plurality of microLEDs, a beam splitter, and a film having a plurality of quantum dots. The beam splitter includes a plurality of layers and is disposed between the substrate and the film having the plurality of quantum dots.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
55.
RAPID THICKENING OF AMINOSILICONES TO PROMOTE EMULSION STABILITY AND ADHESION OF UV-CURABLE QUANTUM DOT ENHANCEMENT FILM EMULSIONS
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures, an aminosilicone polymer, an organic resin, and a cation. The present invention also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.
Embodiments of the present application relate to the use of quantum dots mixed with spacer particles. An illumination device includes a first conductive layer, a second conductive layer, and an active layer disposed between the first conductive layer and the second conductive layer. The active layer includes a plurality of quantum dots that emit light when an electric field is generated between the first and second conductive layers. The quantum dots are interspersed with spacer particles that do not emit light when the electric field is generated between the first and second conductive layers.
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
C09K 11/00 - Luminescent, e.g. electroluminescent, chemiluminescent, materials
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
Embodiments of a display device are described. The display device includes a backlight unit having a light source, a quantum dot film, and a radiation absorbing element. The quantum dot film is optically coupled to the light source and is configured to process light received from the light source. The radiation absorbing element is optically coupled to the quantum dot film and is configured to tune a spectral emission width of the processed light received from the quantum dot film to achieve over 90% color gamut coverage of a standard RGB color space.
Embodiments of the present application relate to the arrangement of quantum dot optics on architectural windows. An illumination device includes a first conductive layer (302), a second conductive layer (304), and a polymer layer (310) disposed between the first conductive layer and the second conductive layer. The polymer layer includes a plurality of quantum dots. The first conductive layer, the polymer layer, and the second conductive layer form a layer stack disposed on a surface of a window pane (202).
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
B60Q 1/26 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic
F21V 33/00 - Structural combinations of lighting devices with other articles, not otherwise provided for
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
Embodiments of a population of buffered barrier layer coated nanostructures and a method of making the nanostructures are described. Each of the buffered barrier layer coated nanostructures includes a nanostructure, an optically transparent buffer layer disposed on the nanostructure, and an optically transparent buffered barrier layer disposed on the buffer layer. The buffered barrier layer is configured to provide a spacing between adjacent nanostructures in the population of buffered barrier layer coated nanostructures to reduce aggregation of the adjacent nanostructures. The method for making the nanostructures includes forming a solution of reverse micro-micelles using surfactants, incorporating nanostructures into the reverse micro-micelles, and incorporating a buffer agent into the reverse micro-micelles. The method further includes individually coating the nanostructures with a buffered barrier layer and isolating the buffered barrier layer coated nanostructures with the surfactants of the reverse micro-micelles disposed on the barrier layer.
Systems and methods that provide compensation for ambient light in a location of a display device are described. According to various embodiments, a method of compensating for ambient light in a display device is provided. According to the method, an ambient light measurement may be received. The ambient light measurement may include information concerning the intensity of the ambient light present at the location of the display device, the spectrum of the ambient light present at the display device (e.g., color temperature, white balance, or wavelength), and/or both an intensity and a spectrum of the ambient light.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
61.
METHOD FOR SYNTHESIZING CORE SHELL NANOCRYSTALS AT HIGH TEMPERATURES
The invention is in the field of nanostructure synthesis. The invention relates to methods for producing nanostructures, particularly Group III-V and Group II-VI semiconductor nanostructures, such as InP/ZnSe or In/ZnSe/ZnS core/shell nanoparticles. The invention also relates to high temperature methods of synthesizing nanostructures comprising simultaneous injection of cores and shell precursors.
C30B 7/14 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core are provided. Also provided are methods of increasing the sphericity of nanostructures comprising subjecting nanocrystal cores to an acid etch step, an annealing step, or a combination of an acid etch step and an annealing step.
Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and thick shells of ZnSe and ZnS, are provided. The nanostructures may have one or more gradient ZnSexS1-x monolayers between the ZnSe and ZnS shells, wherein the value of x decreases gradually from the interior to the exterior of the nanostructure. Also provided are methods of preparing the nanostructures comprising a high temperature synthesis method. The thick shell nanostructures of the present invention display increased stability and are able to maintain high levels of photoluminescent intensity over long periods of time. Also provided are nanostructures with increased blue light absorption.
Low concentration cadmium-containing quantum dot compositions are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.
Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
Embodiments of a device and a method of forming the same are described. The device includes a backlight unit and an image generating unit. The backlight unit includes an optical cavity having a top side, a bottom side, and side walls. The backlight unit further includes an array of light sources coupled to the optical cavity and a quantum dot film positioned within the optical cavity. The quantum dot film is configured to process light received from the array of light sources and the backlight unit is configured to transit the processed light to the image generating unit. The method includes providing an optical cavity having a top side, a bottom side, and side walls. The method further includes coupling an array of light sources to the optical cavity and supporting a quantum dot film within the optical cavity.
Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H05B 33/20 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
Quantum dots and methods of making quantum dots are described. A method begins with forming quantum dots having a core-shell structure with a plurality of ligands on the shell structure. The method incudes exchanging the plurality of ligands with a plurality of second ligands. The plurality of second ligands have a weaker binding affinity to the shell structure than the plurality of first ligands. The plurality of second ligands are then exchanged with hydrolyzed alkoxysilane to form a monolayer of hydrolyzed alkoxysilane on a surface of the shell structure. The method includes forming a barrier layer around the shell structure by using the hydrolyzed alkoxysilane as a nucleation center.
The present invention is in the field of nanostructure synthesis. The present invention is directed to methods for producing nanostructures, particularly Group III-V semiconductor nanostructures. The present invention is also directed to preparing Group III inorganic compounds that can be used as precursors for nanostructure synthesis.
Highly luminescent nanostructures comprising a ZnSe core and ZnS shell layers, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. Processes for producing such highly luminescent nanostructures and techniques for shell synthesis are also provided.
Embodiments of a device and a method of tuning white point values of light distributed by a backlight unit (101) of a display device (200) are described. The device includes a backlight unit (101), an image generating unit (106), and a patterned layer (240). The backlight unit (101) includes a light source unit (102) and an optical processing unit (104) having a quantum dot film (114) coupled to the light source unit (102). The image generating unit (106) includes a display screen (126). The backlight unit (101) is configured to distribute light to the display screen (126) and the patterned layer (240) is configured to tune white point values of the distributed light to a desired white point value in order to achieve substantially uniform white point values across the display screen.
Embodiments of a quantum dot carrier, a method of making a quantum dot carrier, and a quantum dot enhancement film are described. The quantum dot carrier includes a porous material, a plurality of quantum dots and a dispersing material for dispersing the quantum dots within the porous material. The porous material includes a plurality of pores while the quantum dots are disposed within the plurality of pores.
The present invention relates to silicone polymer ligands for binding to quantum dots. The silicone polymer ligands contain a multiplicity of amine, carboxy, and/or phosphine binding groups suitable for attachment to quantum dots. The present invention also describes a process for the preparation of quantum dot binding ligands.
Embodiments of a display device (300) and a method of reducing optical leakage from a backlight unit (202) of a display device (300) are described. The display device (300) includes a backlight unit (202, 208, 204), an image generating unit (206) coupled to the backlight unit and a blocking structure (334a-334e). The backlight unit (202, 208, 204) includes a light source unit (202) such as a blue LED and an optical processing unit (204) that comprises a quantum dot film (214) and optical sheets (222, 216). The backlight unit (202, 208, 204) is configured to transmit light to the image generating unit (206); the blocking structure (334a-334e) is configured to prevent the light from reaching the image generating unit without passing through the optical processing unit. The blocking structure (334a-334e) may consist of light-shielding tape, tabs or paint arranged along the periphery of the light guide plate (212), the optical sheets (22, 216) and the quantum dot film (214).
Disclosed herein are display systems comprising light-emitting diodes (LED&), suitably blue light LEDs, which demonstrate increased optical power output. In embodiments, the display systems include compositions comprising phosphors, including luminescem nanocrystals.
G02B 6/10 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
The present invention describes a solventless ligand exchange using a siloxane polymer having a binding ligand that displaces the binding ligand on a quantum dot material. High performance down-converting phosphor technologies will play a prominent role in the next generation of visible light emission, including high efficiency solid-state white lighting. In addition, such technologies are also applicable to near infrared and infrared light emitting technologies. Down-conversion from ultraviolet or blue light emitting semiconductor light emitting diodes into blue, red and green wavelengths offers a fast, efficient and cost-effective path for delivering commercially attractive white light sources. Unfortunately, existing rare-earth activated phosphors or halophosphates, which are currently the primary source for solid-state down-conversion, were originally developed for use in fluorescent lamps and cathode ray tubes, and therefore have a number of critical shortfalls.
Quantum-dot binding ligands with easy to synthesize alkyl-acids are provided. The quantum-dot binding ligands include a multiplicity of carboxy binding ligands in combination with an alkyl backbone, and optionally a solubilizing group. The ligands and coated nanostructures of the present invention are useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.
Quantum-dot binding ligands with silsesquioxane moieties are provided. The quantum-dot binding ligands include a multiplicity of amine or carboxy binding ligands in combination with silsesquioxane moieties providing improved stability for the ligated quantum dots. The ligands and coated nanostructures of the present invention are useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.
C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
C08L 83/00 - Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon onlyCompositions of derivatives of such polymers
H01L 27/00 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
A quantum dot film article includes a first barrier film, a second barrier film, and a quantum dot layer separating the first barrier from the second barrier film. The quantum dot layer includes quantum dots dispersed in a polymer material. The polymer material includes a methacrylate polymer, an epoxy polymer and a photoinitiator.
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
80.
HIGHLY LUMINESCENT NANOSTRUCTURES AND METHODS OF PRODUCING SAME
Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.
Siloxane polymer ligands for binding to quantum dots are provided. The polymers include a multiplicity of amine or carboxy binding ligands in combination with long-alkyl chains providing improved stability for the ligated quantum dots. The ligands and coated nanostructures of the present invention are useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.
09 - Scientific and electric apparatus and instruments
Goods & Services
Light emitting diodes (LEDs), light emitting diode (LED) displays, light emitting diodes (LEDs), all for use by manufacturers in mobile phones, tablets, computers and televisions and other display, commercial, industrial, residential and architectural lighting accent applications
09 - Scientific and electric apparatus and instruments
Goods & Services
Light emitting diodes (LEDs), light emitting diode (LED) displays, light emitting diodes (LEDs), all for use by manufacturers in mobile phones, tablets, computers and televisions and other display, commercial, industrial, residential and architectural lighting accent applications
84.
QUANTUM DOT FILMS, LIGHTING DEVICES, AND LIGHTING METHODS
Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
The present invention relates to treating of reflective surfaces to prevent fouling. The present invention also relates to reflective materials treated to prevent fouling, as well as methods of using such reflective materials.
B32B 5/16 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer formed of particles, e.g. chips, chopped fibres, powder
The present invention relates to treating of reflective surfaces to prevent fouling. The present invention also relates to reflective materials treated to prevent fouling, as well as methods of using such reflective materials.
B05D 3/00 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
87.
NANOSTRUCTURE-ENHANCED PLATELET BINDING AND HEMOSTATIC MATERIALS AND STRUCTURES
Methods, systems, and apparatuses for nanomaterial-enhanced platelet binding and hemostatic medical devices are provided. Hemostatic materials and structures are provided that induce platelet binding, including platelet binding and the coagulation of blood at a wound/opening caused by trauma, a surgical procedure, ulceration, or other cause. Example embodiments include platelet binding devices, hemostatic bandages, hemostatic plugs, and hemostatic formulations. The hemostatic materials and structures may incorporate nanostructures and/or further hemostatic elements such as polymers, silicon nanofibers, silicon dioxide nanofibers, and/or glass beads into a highly absorbent, gelling scaffold. The hemostatic materials and structures may be resorbable.
The present invention provides light-emitting diode (LED) devices comprises compositions and containers of hermetically sealed luminescent nanocrystals. The present invention also provides displays comprising the LED devices. Suitably, the LED devices are white light LED devices.
Methods, systems, and apparatuses for nanowire deposition are provided. A deposition system includes an enclosed flow channel, an inlet port, and an electrical signal source. The inlet port provides a suspension that includes nanowires into the channel. The electrical signal source is coupled to an electrode pair in the channel to generate an electric field to associate at least one nanowire from the suspension with the electrode pair. The deposition system may include various further features, including being configured to receive multiple solution types, having various electrode geometries, having a rotatable flow channel, having additional electrical conductors, and further aspects.
The present invention relates to nanostructured materials (including nanowires) for use in batteries. Exemplary materials include carbon-comprising, Si-based nanostructures, nanostructured materials disposed on carbon-based substrates, and nanostructures comprising nanoscale scaffolds. The present invention also provides methods of preparing battery electrodes, and batteries, using the nanostructured materials.
H05K 1/16 - Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
H01R 43/00 - Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
B01D 57/02 - Separation, other than separation of solids, not fully covered by a single other group or subclass, e.g. by electrophoresis
G01L 1/20 - Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluidsMeasuring force or stress, in general by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
91.
FUNCTIONALIZED MATRIXES FOR DISPERSION OF NANOSTRUCTURES
Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes are optionally formed from the ligands. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core- shell nanostructures with Group II- VI shells.
B82B 3/00 - Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
The present invention relates to nanoparticle compositions for use in photovoltaic cells. Nanoparticles are utilized to provide increased scattering and also wavelength shifting to increase the efficiency of the photovoltaic cells. Exemplary nanoparticles include colloidal metal and fluorescent nanoparticles.
The present invention relates to SiC nanostructures, including SiC nanopowder, SiC nanowires, and composites of SiC nanopowder and nanowires, which can be used as catalyst supports in membrane electrode assemblies and in fuel cells. The present invention also relates to composite catalyst supports comprising nanopowder and one or more inorganic nanowires for a membrane electrode assembly.
The present invention provides methods for hermetically sealing luminescent nanocrystals, as well as compositions and containers comprising hermetically sealed luminescent nanocrystals. By hermetically sealing the luminescent nanocrystals, enhanced lifetime and luminescence can be achieved.
H01L 21/06 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
95.
MEMBRANE ELECTRODE ASSEMBLIES WITH INTERFACIAL LAYER
The present invention relates to interfacial layers for use m membrane electrode assemblies that comprise nanowire-supported catalysts, and fuel cells comprising such membrane electrode assemblies. The present invention also relates to methods of preparing membrane electrode assemblies and fuel cells comprising interfacial layers and nanowire-supported catalysts.
The present invention relates to electrochemical catalyst particles, including nanoparticles, which can be used membrane electrode assemblies and in fuel cells. In exemplary embodiments, the present invention provides electrochemical catalysts supported by various materials. Suitably the catalysts have an atomic ratio of oxygen to a metal in the nanoparticle of about 3 to about 6.
H01B 1/04 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of carbon-silicon compounds, carbon, or silicon
Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide, hafnium oxide, and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multi state (e.g., two, three or four bit) operation.
H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
The invention relates to non-fouling hydrophobic reflective surfaces for a variety of applications which in one embodiment related to medical device applications comprises a method of performing a medical procedure using a surgical navigation system which includes the steps of placing one or more reflective spheres on a surgical instrument or apparatus, the reflective spheres comprising a hydrophobic coating on a sub-micron structured surface of the spheres, wherein the spheres substantially maintain their reflective properties after the spheres are contacted with a biological fluid; shining light on the reflective spheres; capturing reflected light from the spheres with a camera or other device; and registering and/or tracking a location and/or position of the spheres.
The present invention relates to treating of reflective surfaces to prevent fouling. The present invention also relates to reflective materials treated to prevent fouling, as well as methods of using such reflective materials.
The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.
