A device that incorporates teachings of the subject disclosure may include, for example, a multilayer initial oxide on a silicon substrate, where the multilayer initial oxide comprises amorphous polysilicates and a group one metal or a group two metal; a first electrode layer on the multilayer initial oxide; a dielectric layer on the first electrode layer; a second electrode layer on the dielectric layer, where an edge alignment spacing between at least one pair of corresponding electrode edges of two electrode layers of the capacitor is two microns or less; and connections for the first and second electrode layers. Other embodiments are disclosed.
H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/92 - Capacitors with potential-jump barrier or surface barrier
2.
TUNABLE COPLANAR CAPACITOR WITH VERTICAL TUNING AND LATERAL RF PATH AND METHODS FOR MANUFACTURING THEREOF
A tunable capacitor that incorporates teachings of the subject disclosure may include: a substrate; a first dielectric layer over the substrate; a plurality of bias lines encapsulated between the substrate and the tunable dielectric layer; a first metal layer over the tunable dielectric layer (wherein the first metal layer has a plurality of first gaps); an upper bias layer over the first metal layer (herein each of a plurality of portions of the upper bias layer extend through a respective one of the plurality of first gaps to come into contact with the first dielectric layer, and wherein at least a second gap is disposed in the upper bias layer); and a second metal layer (wherein a portion of the second metal layer extends through the second gap to come into contact with the first metal layer). Other embodiments are disclosed.
H01G 7/06 - Capacitors in which the capacitance is varied by non-mechanical meansProcesses of their manufacture having a dielectric selected for the variation of its permitivity with applied voltage, i.e. ferroelectric capacitors
3.
SMALL-GAP COPLANAR TUNABLE CAPACITORS AND METHODS FOR MANUFACTURING THEREOF
A coplanar capacitor that incorporates teachings of the subject disclosure may include: a substrate; a voltage-tunable dielectric layer over the substrate; a plurality of bias lines over the voltage-tunable dielectric layer (wherein the bias lines are covered by an inter-level dielectric); a plurality of sidewall spacers (wherein each of the sidewall spacers is located adjacent one of the bias lines and each of the sidewall spacers spans between a respective portion of the voltage-tunable dielectric layer and a respective portion of the inter-level dielectric); and an electrode over the inter-level dielectric, and over portions of the voltage-tunable dielectric layer that are not covered by the plurality of bias lines and that are not covered by the sidewall spacers, wherein a plurality of gaps are disposed in the electrode. Other embodiments are disclosed.
H01G 7/06 - Capacitors in which the capacitance is varied by non-mechanical meansProcesses of their manufacture having a dielectric selected for the variation of its permitivity with applied voltage, i.e. ferroelectric capacitors
H01G 13/06 - Apparatus specially adapted for manufacturing capacitorsProcesses specially adapted for manufacturing capacitors not provided for in groups with provision for removing metal surfaces
H10D 99/00 - Subject matter not provided for in other groups of this subclass
4.
METHOD AND APPARATUS FOR A THIN FILM DIELECTRIC STACK
A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor a silicon substrate having a silicon dioxide layer; an adhesion layer on the silicon dioxide layer, wherein the adhesion layer is a polar dielectric; a first electrode layer on the adhesion layer; a dielectric layer on the first electrode layer; and a second electrode layer on the dielectric layer. Other embodiments are disclosed.
H01B 3/12 - Insulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
H01G 4/232 - Terminals electrically connecting two or more layers of a stacked or rolled capacitor
A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor having a substrate, a first electrode layer on the substrate, a first dielectric layer on the first electrode layer where the first dielectric layer has a columnar-oriented grain structure, a group of second dielectric layers stacked on the first dielectric layer where each of the group of second dielectric layers has a randomly- oriented grain structure, and a second electrode layer on the group of second dielectric layers. Other embodiments are disclosed.
High-throughput deposition of a voltage-tunable dielectric material onto a substrate comprising a conductive electrode is provided. Respective gradients in at least two grain size defining parameters of the deposition are simultaneously provided, the respective gradients occurring for a first time period thereby producing a smoothly changing columnar crystalline habit of the voltage-tunable dielectric material. When the first time period has ended, the deposition continues for a second time period where the grain size defining parameters are held constant. In particular, the smoothly changing columnar crystalline habit of the voltage-tunable dielectric material is intentionally distorted by simultaneously providing the respective gradients in the in at least two grain size defining parameters of the deposition.
C30B 30/00 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
H01G 7/06 - Capacitors in which the capacitance is varied by non-mechanical meansProcesses of their manufacture having a dielectric selected for the variation of its permitivity with applied voltage, i.e. ferroelectric capacitors
A system that incorporates teachings of the subject disclosure may include, for example, a fabricated thin film capacitor formed by depositing a first dielectric layer on a first electrode layer utilizing a first process that is performed at a first temperature, depositing a second dielectric layer on the first dielectric layer utilizing a second process that forms a randomly-oriented grain structure for the second dielectric layer, depositing a third dielectric layer on the second dielectric layer utilizing a third process that is performed at a second temperature and that forms a columnar- oriented grain structure for the third dielectric layer where the second temperature is higher than the first temperature, and depositing a second electrode layer on the third dielectric layer to form the thin film capacitor. Other embodiments are disclosed.
H01L 21/64 - Manufacture or treatment of solid-state devices other than semiconductor devices, or of parts thereof, not specially adapted for a single type of device provided for in subclasses , , or
A system that incorporates teachings of the subject disclosure may include, for example, an antenna system coupled with the transceiver that includes a first antenna and a second antenna where one of the first or second antennas is operating as a primary antenna and the other of the first or second antennas is operating as a diversity antenna. The system can include an RF switch connected with the antenna system, where the RF switch has a first position in which the first antenna is the primary antenna and the second antenna is the diversity antenna, and wherein the RF switch has a second position in which the second antenna is the primary antenna and the first antenna is the diversity antenna. The system can include a controller coupled with the matching network and with the RF switch, where the controller receives first reflection measurements associated with the antenna system, and where the controller adjusts the RF switch to select between the first and second positions according to the first reflection measurements.
H04B 1/401 - Circuits for selecting or indicating operating mode
H04B 7/06 - Diversity systemsMulti-antenna systems, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station
H04B 17/12 - MonitoringTesting of transmitters for calibration of transmit antennas, e.g. of amplitude or phase
9.
METHODS AND APPARATUS FOR TUNING A COMMUNICATION DEVICE
A system that incorporates teachings of the subject disclosure may include, for example, method for initiating a mode of operation of a communication device, measuring a signal to determine an adverse operational effect on the communication device, determining a tuning state from the signal to compensate for the adverse operational effect, tuning a circuit of the communication device having a variable reactance according to the tuning state, storing the tuning state in a memory of the communication device, and tuning the circuit according to the tuning state retrieved from the memory responsive to detecting a reoccurrence of the mode of operation of the communication device. Other embodiments are disclosed.
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