Abstract

Methods and structures includes providing a substrate, forming a prelayer over a substrate, forming a barrier layer over the prelayer, and forming a channel layer over the barrier layer. Forming the prelayer may include growing the prelayer at a graded temperature. Forming the barrier layer is such that the barrier layer may include GaAs or InGaAs. Forming the channel layer is such that the channel layer may include InAs or an Sb-based heterostructure. Thereby structures are formed.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/205 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Abstract

A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.

IPC Classes  ?

• G01N 27/407 - Cells and probes with solid electrolytes for investigating or analysing gases
• G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
• G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups

Abstract

A method for increasing an oxide thickness at trench corner of an UMOSFET is provided, comprising providing an N-type substrate, and forming an N-type drift region, N-type and P-type heavily doped regions and P-type body therein. A trench is defined through lithography, and a pad oxide is formed along the trench through oxidation or deposition process. An oxidation barrier is formed upon the pad oxide. A thermal oxidation process is employed, so a corner oxide is effectively formed at the trench corner. After removing the pad oxide and oxidation barrier, various back-end processes are carried out to complete the transistor structure. The invention is aimed to increase oxide thickness near the trench bottom, and can be applied to high voltage devices, such as SiC. The conventional electric field crowding effect occurring at the trench corner is greatly solved, thus increasing breakdown voltages thereof.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/66 - Types of semiconductor device

Abstract

The invention provides a self-organized quantum dot semiconductor structure. The quantum dot semiconductor structure includes: a conductive ridge on a substrate; an insulative layer covering the substrate and the conductive ridge, wherein the insulative layer includes a top portion and two sidewalls over the conductive ridge; a semiconductor mechanism of etching back and thermal oxidation, implemented on a semiconductor-alloyed layer set on the insulative layer; a plurality of quantum dots respectively embedded within a plurality of silicon dioxide spacer islands based on the semiconductor mechanism, the quantum dots and the silicon dioxide spacer islands adhered to the sidewalls of the insulative layer; and a plurality of conductive ledges adhered to the silicon dioxide spacer islands, wherein each of the conductive ledges is a portion of an electrode self-alignment to the quantum dot.

IPC Classes  ?

• H01L 29/775 - Field-effect transistors with one-dimensional charge carrier gas channel, e.g. quantum wire FET
• G06N 10/00 - Quantum computing, i.e. information processing based on quantum-mechanical phenomena
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form

Abstract

The present disclosure provides packet aggregation and disaggregation methods. In the packet aggregation methods, the protocol-independent packet processor (P4) switch stores plural message headers of plural packets in the ring buffer. When the plural message headers stored in the ring buffer reach a pre-defined amount of data, the P4 switch replaces the first flag header in the current packet with a second flag header so as to form a work packet. The egress pipeline of the P4 switch recirculates the work packet repeatedly, whenever it receives a work packet, a message header is extracted from a plurality of message headers in the ring buffer and added to the working packet for packet aggregation.

IPC Classes  ?

• H04L 49/90 - Buffering arrangements
• H04L 49/25 - Routing or path finding in a switch fabric
• H04L 69/22 - Parsing or analysis of headers
• G16Y 10/75 - Information technologyCommunication

Abstract

A system of a robot for human following includes the robot faced toward a first direction. The robot includes a detecting device, a controlling device and a mobile device. The detecting device detects a target human and a obstacle. The controlling device generates a first parameter according to a first vector between the target human and the robot, generates a second parameter according to a second vector between the obstacle and the robot, and generates a driving command according to a first resultant force parameter generated from the first parameter and the second parameter and an angle value between the first direction and the first vector to drive the robot. The mobile device performs the driving command to enable the robot dodging the at least one obstacle and following the target human, simultaneously. A controlling method of a robot for human following is also disclosed herein.

IPC Classes  ?

• B25J 9/16 - Programme controls
• B25J 13/08 - Controls for manipulators by means of sensing devices, e.g. viewing or touching devices
• G05D 1/02 - Control of position or course in two dimensions

Abstract

Disclosed herein is a method of treating a subject having arterial stenosis. The method comprises: (a) providing a plurality of image frames of an artery of the subject taken in sequence; (b) in a plurality of cross-sections of the artery, determining a maximum diameter and a minimum diameter of each of the plurality of cross-sections of the artery among the plurality of image frames of the step (a); (c) calculating an average vasodilation ratio of the artery base on the maximum diameter and the minimum diameter determined in the step (b); and (d) treating the subject based on the average vasodilation ratio calculated in the step (c), by implanting a stent to the subject when the average vasodilation ratio is equal to or greater than 0.2; or administering to the subject an effective amount of a vasodilator when the average vasodilation ratio is less than 0.2.

IPC Classes  ?

• G06T 7/00 - Image analysis
• A61F 2/82 - Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
• G06F 17/18 - Complex mathematical operations for evaluating statistical data

Abstract

A method of fabricating a thin film with a varying thickness includes the steps of providing a shadow mask with an opening, providing a carrier plate, arranging a substrate on the carrier plate, and coating the substrate through the opening whilst rotating the carrier plate relative to the shadow mask. A plurality of zones of the substrates is swept and exposed from arcuate portions of the opening per each turn by a plurality of predetermined exposure times, respectively. The varying thickness of the thin film corresponds to variation of the predetermined exposure times.

IPC Classes  ?

• C23C 14/04 - Coating on selected surface areas, e.g. using masks
• G02B 5/28 - Interference filters

Abstract

A portable genome sequencing and genotyping device includes a sample processing module, a sequencing module, an analyzing module, and a communication module. The sample processing module is configured to process a sample so as to generate at least one DNA segment of the sample. The sequencing module is connected to the sample processing module, and is configured to generate a number of base sequences corresponding to the at least one DNA segment. The analyzing module is coupled to the sequencing module, and is configured to generate a genotyping analysis result based on the base sequences. The communication module is configured to receive the genotyping analysis result and transmit the genotyping analysis result to a user terminal.

IPC Classes  ?

• C12Q 1/6869 - Methods for sequencing
• B01L 3/00 - Containers or dishes for laboratory use, e.g. laboratory glasswareDroppers

Abstract

A method for regulating traffic of a Transmission Control Protocol (TCP) flow includes: deciding, based on a ratio of current bucket level to bucket size, a value of an Explicit Congestion Notification (ECN) bit of a packet; setting a field of a meter tag of the packet based on a packet length of the packet, the value of the ECN bit, and a current bucket level; updating the current bucket level based on the field of the meter tag; calculating an actual transmission rate; and determining an adjustment value based on a difference between the actual transmission rate and a target rate, and adjusting a rate of change of bucket level based on the adjustment value.

IPC Classes  ?

• H04L 29/06 - Communication control; Communication processing characterised by a protocol
• H04L 47/215 - Flow controlCongestion control using token-bucket
• H04L 69/163 - In-band adaptation of TCP data exchangeIn-band control procedures
• H04L 47/11 - Identifying congestion

Abstract

The invention provides a quantum dot manufacturing method and related quantum dot semiconductor structure. The quantum dot semiconductor structure includes: a conductive ridge on a substrate; an insulative layer covering the substrate and the conductive ridge, wherein the insulative layer includes a top portion and two sidewalls over the conductive ridge; a plurality of quantum dots respectively embedded within a plurality of silicon dioxide spacer islands, which are adhered to the sidewalls of the insulative layer; and a plurality of conductive ledges adhered to the silicon dioxide spacer islands, wherein each of the conductive ledges is a portion of an electrode with alignment to the corresponding quantum dot.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 29/165 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group in different semiconductor regions
• H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed

Abstract

A microRNA (miRNA) expression signature for predicting triple-negative breast cancer (TNBC) recurrence is provided. The miRNA expression signature consists essentially of hsa-miR-139-5p, hsa-miR-10b-5p, hsa-miR-486-5p, hsa-miR-455-3p, hsa-miR-107, hsa-miR-146b-5p, hsa-miR-324-5p, and hsa-miR-20a-5p.

IPC Classes  ?

• C12Q 1/6886 - Nucleic acid products used in the analysis of nucleic acids, e.g. primers or probes for diseases caused by alterations of genetic material for cancer

Abstract

A system for synthesizing signal of user equipment and a method thereof are provided. The system includes a physical channel modeler and a physical channel training module. The physical channel modeler receives geo information of a field under test of and a sparse real physical field channel feature to build a physical channel model. The physical channel modeler estimates a plurality of predefined positions of the geo information to obtain a plurality of simulated physical field channel features corresponding to the predefined positions. The physical channel training module receives and performs training on the geo information, the sparse real physical field channel feature and the simulated physical field channel features by using an AI algorithm to perform an inference of a fully real physical field channel feature.

IPC Classes  ?

• H04B 17/391 - Modelling the propagation channel
• H04W 24/06 - Testing using simulated traffic
• H04W 24/10 - Scheduling measurement reports

Abstract

A structure of trench transistors includes the following elements. A substrate serves as a drain of the structure of trench transistors. An epitaxial layer is disposed on the substrate. A plurality of trenches are disposed in the epitaxial layer. A plurality of gate insulator layers are respectively disposed on the inner surfaces of the trenches. A plurality of gates are respectively disposed on the gate insulator layers. A plurality of first base regions are respectively disposed in the epitaxial layer between the adjacent trenches, and have a first depth from the top surface of the epitaxial layer. A plurality of second base regions are respectively disposed in the epitaxial layer adjacent to the sidewalls of the trenches, and each has a second depth from the bottom surface of the first base region. A plurality of sources are respectively disposed in the first base region beside the sidewalls of the trenches.

IPC Classes  ?

• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/66 - Types of semiconductor device
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

Abstract

A liquid treatment apparatus includes a water pump and a plasma jet generating device. A liquid inlet of the water pump is immersed in a liquid. A liquid outlet of the water pump is configured to eject the liquid from the liquid inlet out of the water pump without artificial bubbles in the liquid. A gas inlet of the plasma jet generating device is configured to be located out of the liquid. A pair of electrodes of the plasma jet generating device is configured to generate plasma jet by the gas from the gas inlet. The plasma jet outlet is configured to be immersed in the liquid and in proximity to the liquid outlet of the water pump so that the gas is automatically entrained into the gas inlet of the plasma jet generating device when the liquid is ejected out from the liquid outlet.

IPC Classes  ?

• C02F 1/46 - Treatment of water, waste water, or sewage by electrochemical methods
• H01J 37/32 - Gas-filled discharge tubes
• B08B 3/00 - Cleaning by methods involving the use or presence of liquid or steam

Abstract

A radio frequency integrated circuit includes a silicon CMOS substrate with at least one CMOS device buried therein, and at least one thin film transistor formed on the silicon CMOS substrate and functioning as a radio frequency device. The thin film transistor includes a T-shaped gate electrode. A method for the fabricating a radio frequency integrated circuit is also disclosed.

IPC Classes  ?

• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 29/66 - Types of semiconductor device
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 23/66 - High-frequency adaptations

Abstract

A rotary coding disc and a method for designing the same is applied to an optical encoder. N-bit De Bruijn sequences include 1 and 0. The N-bit De Bruijn sequence has the maximum binary code and the minimum binary code. When a binary code having M bits is located between the maximum binary code and the minimum binary code, the corresponding N-bit De Bruijn sequences are selected as diagonal De Bruijn sequences, wherein The De Bruijn sequence may be converted into a De Bruijn energy level. The total number of 1 consecutively neighboring 0 and (N−1) consecutively neighboring N of the De Bruijn energy level is calculated. The transparent areas and the opaque areas are located based on the De Bruijn sequence or the De Bruijn energy level that corresponds to the total number less than or equal to N.

IPC Classes  ?

• G01D 5/34 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
• G01D 5/347 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales
• G01D 5/249 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing characteristics of pulses or pulse trainsMechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means generating pulses or pulse trains using pulse code
• G01D 5/245 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing characteristics of pulses or pulse trainsMechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means generating pulses or pulse trains using a variable number of pulses in a train

Abstract

A convolution operation module comprising a first memory element, a second memory element and a first operation unit is presented. The first memory element is configured to store a first part of a first row data of an array data. The second memory element is configured to store a second part of a second row data of an array data. Wherein the second row data is adjacent to the first row data in the array data and the first part and the second part have a same amount of data. The first operation unit is coupled to the first memory element and second memory element. Wherein the first operation unit integrates the first part and the second part into a first operation matrix. Wherein the first operation unit performs a convolution operation on the first operation matrix and a first kernel map to derive a first feature value.

IPC Classes  ?

• G06N 3/08 - Learning methods
• G06F 9/30 - Arrangements for executing machine instructions, e.g. instruction decode
• G06F 9/54 - Interprogram communication

Abstract

The present invention relates to a flow rate measuring method comprising: establishing a database which includes a plurality of flow profiles; measuring the flow in a flow field using a plurality of transducers wherein in between every two transducers there exists an acoustic path which indicates the flow speed of the flow between the two transducers, and a feature map can be derived from the flow speeds; comparing the feature map with the database; selecting a matching flow profile from the flow profiles wherein the matching flow profile has a plurality of weighting functions corresponding to the acoustic paths; and calibrating the flow speed using the weighting functions.

IPC Classes  ?

• G01F 25/10 - Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
• G01F 1/66 - Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by measuring frequency, phase shift or propagation time of electromagnetic or other waves, e.g. using ultrasonic flowmeters
• G01F 1/667 - Arrangements of transducers for ultrasonic flowmetersCircuits for operating ultrasonic flowmeters
• G01N 29/44 - Processing the detected response signal
• G01N 29/30 - Arrangements for calibrating or comparing, e.g. with standard objects

Abstract

A vortex-induced vibration wind energy harvesting device, including an array consisting of a plurality of oscillators and a plurality of piezoelectric microelectromechanical systems (MEMSs), is provided. An oscillator is mounted on each of the piezoelectric MEMSs. When any one of the oscillators is oscillated by and resonant with vortex shedding due to an incoming airflow, its vortices in the wake will enhance the oscillation of the downstream oscillators, so that overall oscillation of the oscillators in the array is strengthened. The piezoelectric MEMSs are deformed by the vibration of these oscillators to generate voltage and current to output. In the present invention, the oscillators are arranged closely. When the airflow passes the array, even weak airflow can generate periodic force and cause significant oscillation due to resonance. The MEMS can convert mechanical energy into electrical energy and output it in order to achieve the purpose of wind energy harvesting.

IPC Classes  ?

• H02N 2/18 - Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
• H01L 27/20 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including magnetostrictive components
• H01L 41/113 - Piezo-electric or electrostrictive elements with mechanical input and electrical output
• H01L 41/27 - Manufacturing multilayered piezo-electric or electrostrictive devices or parts thereof, e.g. by stacking piezo-electric bodies and electrodes
• H01L 41/047 - Electrodes
• H01L 41/083 - Piezo-electric or electrostrictive elements having a stacked or multilayer structure
• H01L 41/187 - Ceramic compositions

Abstract

A plasma system is provided. The plasma system includes a low-temperature atmospheric-pressure plasma source and a water-mist supplying source. The low-temperature atmospheric-pressure plasma source has a nozzle. The nozzle is configured to eject a plasma. The water-mist supplying source is configured to deliver a water mist to the plasma ejected from the nozzle.

IPC Classes  ?

• B01F 23/213 - Mixing gases with liquids by introducing liquids into gaseous media by spraying or atomising of the liquids
• B01F 23/10 - Mixing gases with gases
• H01J 37/32 - Gas-filled discharge tubes

Abstract

A gas sensor for sensing a gas in a humid environment includes a first electrode layer, a second electrode layer that is spaced apart from the first electrode layer, and a gas sensing layer that electrically interconnects the first electrode layer and the second electrode layer. The gas sensing layer is made of a hygroscopic electrically insulating material.

IPC Classes  ?

• G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
• G01N 27/04 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance

Abstract

An optical displacement sensing system is provided. With configuration of an optical sensor disposed on a displacement platform and in cooperation with a broadband light source and an optical spectrum analyzer, when the displacement platform moves, the waveguide grating of the optical sensor is resonated and the reflected light provided with a resonance wavelength is formed. The waveguide grating has the plurality of grating periods, and when the displacement platform moves to a different position to make the broadband light source correspond to a different grating period, the position can correspond to the different resonance wavelength. Therefore, according to the aforementioned configuration, the position is determined according to the different resonance wavelength, instead of using an optical encoder; furthermore, the micrometer-scale or nanometer-scale displacement detection is achieved.

IPC Classes  ?

• G02B 6/35 - Optical coupling means having switching means
• G01D 5/38 - Forming the light into pulses by diffraction gratings
• G01D 5/26 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light
• G01B 11/04 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness specially adapted for measuring length or width of objects while moving
• G02B 27/10 - Beam splitting or combining systems
• G02B 6/36 - Mechanical coupling means

Abstract

Structures and methods of forming self-aligned unsymmetric gate (SAUG) FinFET are provided. The SAUG FinFET structure has two different gate structures on opposite sides of each fin: a programming gate structure and a switching gate structure. The SAUG FinFET may be used as non-volatile memory (NVM) storage element that may be electrically programmed by trapping charges in the charge trapping dielectric (e.g., Si3N4) with appropriate bias on the control gate of the programming gate structure. The stored data may be sensed by sensing the channel current through the SAUG FinFET in response to a bias on the switching gate of the switching gate structure.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
• H01L 21/225 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
• H01L 29/66 - Types of semiconductor device

Abstract

A gas sensor includes a first electrode layer, a second electrode layer, and a gas sensing layer. The second electrode layer is spaced apart from the first electrode layer, has two electrode surfaces oppositely of each other, and is formed with a plurality of first through holes each extending through the two electrode surfaces. The gas sensing layer electrically interconnects the first electrode layer and the second electrode layer, and is made from a composition that includes a thiophene-based compound and a nitrogen-containing polar compound.

IPC Classes  ?

• G01N 27/30 - Electrodes, e.g. test electrodesHalf-cells

Abstract

The invention provides a thermosensitive peptide hydrogel, which comprises water, a polyether/polyol polymer and a peptide molecule. The peptide molecule has a structure represented by the following chemical formula (1). Chemical Structure (1):

IPC Classes  ?

• A61L 27/52 - Hydrogels or hydrocolloids
• A61L 27/18 - Macromolecular materials obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
• A61L 27/22 - Polypeptides or derivatives thereof
• A61L 27/50 - Materials characterised by their function or physical properties
• C12N 5/00 - Undifferentiated human, animal or plant cells, e.g. cell linesTissuesCultivation or maintenance thereofCulture media therefor

Abstract

A method of processing a panoramic map based on an equirectangular projection is provided. The method comprises the following steps. A first and a second equirectangular projected panoramic images are captured through at least one lens at different time, respectively. The first and the second equirectangular projected panoramic images are perspectively transformed based on at least one horizontal angle, respectively. A plurality of first and second feature points are extracted from the first and the second equirectangular projected panoramic images, respectively. A plurality of identical feature points in the first and the second feature points are tracked. A camera pose is obtained based on the identical feature points. A plurality of 3D sparse point maps, in binary format, are established based on the at least one horizontal angle. The camera pose and the 3D sparse point maps are exported to an external system through an export channel.

IPC Classes  ?

• H04N 5/232 - Devices for controlling television cameras, e.g. remote control

Abstract

A system and method of emulating radio device includes a multi-radio unit, a multi-radio unit controller and an under-test radio system. The multi-radio unit includes multiple radio circuits, in which the radio circuits are configured to generate multiple radio emulated signals. The multi-radio unit controller coupled to the multi-radio unit is configured to generate multiple control signals to the multi-radio unit, in which the control signals are configured to control the radio emulated signals sent by the multi-radio unit. The under-test radio system is configured to receive the radio emulated signals generated by the multi-radio unit, and configured to generate multiple data corresponding to the radio emulated signals.

IPC Classes  ?

• H04B 17/00 - MonitoringTesting
• H04B 17/24 - MonitoringTesting of receivers with feedback of measurements to the transmitter

Abstract

A method for allocating communication network resources assigns beam to multiple items of user equipment based on beam-closed manner, and allocates the beam to the item of user equipment with the smallest value if more than one item of the user equipment is assigned to the same beam Then, the method uses a rate control to the multiple items of user equipment according to rate closure manner, and determines whether all items of user equipment is assigned to the beam. Hence, the beam is emitted by the base station and the direction of the user ability align for efficient data transfer.

IPC Classes  ?

• H04W 72/04 - Wireless resource allocation
• H04L 5/14 - Two-way operation using the same type of signal, i.e. duplex

Abstract

A distance measuring device includes a pulsed laser source, a light receiving unit and a computing module. The pulsed laser source emits a laser pulse to a target in accordance with a predetermined period. The light receiving unit has a photon receiving type of light receiving element that receives incident light and outputs a binary pulse, and the binary pulse is used to indicate whether a photon receiving event occurs. The computing module is configured to receive the binary pulse and determine whether an inter-period coincidence event occurs, and the inter-period coincidence event is defined by detecting a plurality of photon receiving events exceeding a predetermined count, on relative positions in a predetermined period number of the predetermined periods. If the calculation module determines that the inter-period coincidence event occurs, a distance of the target is calculated according to time information related to the inter-period coincidence event.

IPC Classes  ?

• G01S 7/4865 - Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
• G01S 17/933 - Lidar systems, specially adapted for specific applications for anti-collision purposes of aircraft or spacecraft
• G01S 17/32 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
• G01S 7/48 - Details of systems according to groups , , of systems according to group

Abstract

A data transmitting method using an LDPC code as an error correction code is provided. The method includes providing a parity check matrix of LDPC code, wherein the size of the parity check matrix is (m1+m2)×(n1+n2); in a sending side, encoding an input data of K bits with a encoder to generate a first block code of (n1+n2) bits, according to the parity check matrix; through a transmitting channel, sending n1 bits of the first block code from the sending side to a receiving side, wherein n2 bits of the first block code are not transmitted; and receiving the n1 bits of the first block code in the receiving side, and using the parity check matrix to perform a decoding algorithm to the received first block code to iterative decodes a second block code of (n1+n2) bits with a decoder. Furthermore, a data decoding method thereof is also provided.

IPC Classes  ?

• H03M 13/11 - Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits using multiple parity bits
• H03M 13/29 - Coding, decoding or code conversion, for error detection or error correctionCoding theory basic assumptionsCoding boundsError probability evaluation methodsChannel modelsSimulation or testing of codes combining two or more codes or code structures, e.g. product codes, generalised product codes, concatenated codes, inner and outer codes

Abstract

The present invention provides a detection device and a method with simplified computing manner A transmitter transmits detection signals to an environment to detect a target. At least a portion of the detection signals are reflected by the target to generate a plurality of reflection signals. A receiver comprises a plurality of receiving units. Each of the receiving units receives the reflection signals to generate a receiving signal. A processing module connected to the receiver includes a conversion unit, an integration unit and a computing unit. The conversion unit converts the receiving signals into transformation signals by a time-domain to frequency-domain transformation. The integration unit integrates the transformation signals into a first integration signal and a second integration signal. The computing unit decomposes the first integration signal and the second integration signal to 1D arrays. The location or the speed of the target is determined by limiting target sites through detection algorithms and a crossed-validation method.

IPC Classes  ?

• G01S 13/34 - Systems for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated using transmission of continuous, frequency-modulated waves while heterodyning the received signal, or a signal derived therefrom, with a locally-generated signal related to the contemporaneously transmitted signal
• G01S 13/58 - Velocity or trajectory determination systemsSense-of-movement determination systems

Abstract

44N (tetra-0-methyl nordihydroguaiaretic acid) and temozolomide and their use in the inhibition and treatment of neoplastic diseases, including glioblastoma multiforme, lung and other cancers.

IPC Classes  ?

• A61K 31/4188 - 1,3-Diazoles condensed with heterocyclic ring systems, e.g. biotin, sorbinil
• A61K 31/495 - Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins having six-membered rings with two nitrogen atoms as the only ring hetero atoms, e.g. piperazine
• A61K 47/02 - Inorganic compounds

Abstract

The present invention provides 11-arylcinnolino[2,3-f]phenanthridinium salt compounds and method for producing the same by highly regioselective synthesis of 11-phenylimino[2,3-f]phenanthridin-9-ium salts from 2-azobiaryls and alkenes under catalysis of palladium, through double oxidative C—H coupling of alkenes, to give the polycyclic cinnolinophenanthridinium salts in moderate yields. The reaction mechanism involves ortho C—H olefination of 2-azobiaryls by alkenes, intramolecular aza-Michael addition, β-hydride elimination, electrophilic palladation followed by intramolecular C—H activation and reductive elimination. The prepared quaternary ammonium salts are candidate materials for solution-processable OLED and bioimaging materials.

IPC Classes  ?

• C07D 471/04 - Ortho-condensed systems
• C07D 495/14 - Ortho-condensed systems

Abstract

A method of cell placement includes choosing the ray-tracing channel matrices for the Nth iteration according to candidate cell locations of the Nth iteration and the user distributions, calculating fitness values for the Nth iteration based on the ray-tracing channel matrices, substituting the fitness values for the Nth iteration and corresponding candidate cell locations for the best fitness and best candidate cell locations in a total iterative process respectively if the fitness values for the Nth iteration are greater than or equal to multiple thresholds and the best fitness in a total iterative process, storing candidate cell locations of the Nth iteration, and verifies termination criteria, if termination criteria are not satisfied at the Nth iteration, generating the candidate cell locations of the N+1th iteration.

IPC Classes  ?

• H04W 16/28 - Cell structures using beam steering
• H04W 16/18 - Network planning tools

Abstract

A communication system includes a baseband circuit, a transmitting end circuit, and a receiving end circuit is disclosed. The transmitting end circuit includes a digital analog conversion circuit and a transmitting end filtering circuit. The receiving end circuit includes a receiving end amplifying circuit, a receiving end filtering circuit, and an analog digital conversion circuit. A first data signal is transmitted to the analog digital conversion circuit through the digital analog conversion circuit and the transmitting end filtering circuit, so that the baseband circuit obtains a first compensation parameter. A second data signal is transmitted to the receiving end filtering circuit, the receiving end amplifying circuit and the analog digital conversion circuit through the digital analog conversion circuit and the transmitting end filtering circuit, so that the baseband circuit obtains a second compensation parameter. The baseband circuit performs calibration according to the first and the second compensation parameter.

IPC Classes  ?

• H04L 27/36 - Modulator circuitsTransmitter circuits
• H04L 27/38 - Demodulator circuitsReceiver circuits
• H04L 25/02 - Baseband systems Details
• H04L 25/03 - Shaping networks in transmitter or receiver, e.g. adaptive shaping networks

Abstract

An object characteristic locating device is provided, which includes a camera module and a processing module. The camera module is configured to capture an image from a front scene. The processing module is configured to perform the following operations: locating a position of an image object in the captured image, and determining a framing range with the image object from the captured image; and preforming image processing on the framing range according to a characteristic of the image object, so as to locate the position of an image characteristic portion of the image object in the captured image.

IPC Classes  ?

• G06T 7/73 - Determining position or orientation of objects or cameras using feature-based methods
• G01S 17/06 - Systems determining position data of a target
• G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints

Abstract

A baseband system includes: an estimation and compensation circuit estimating frequency-independent non-ideal effects based on an original IQ signal pair, and compensating the original IQ signal pair based on a result of the estimation to obtain a compensated IQ signal pair; a channel estimation and equalization circuit performing channel estimation and equalization based on the compensated IQ signal pair to obtain an equalized IQ signal pair; and a tracking and compensation circuit obtaining a result of tracking of residual quantities of the aforesaid non-ideal effects based on the equalized IQ signal pair, and compensating the equalized IQ signal pair based on the result of the tracking to obtain an output IQ signal pair.

IPC Classes  ?

• H04L 25/06 - DC level restoring meansBias distortion correction
• H04B 1/16 - Circuits
• H04L 25/02 - Baseband systems Details
• H04L 25/03 - Shaping networks in transmitter or receiver, e.g. adaptive shaping networks

Abstract

The present invention provides a carboxylated nanodiamond-mediated CRISPR-Cas9 delivery system for gene editing comprising nanodiamond (ND) particles as the carriers of CRISPR-Cas9 components designed to introduce the mutation in a given gene for repairing a tissue damage.

IPC Classes  ?

• C12N 15/90 - Stable introduction of foreign DNA into chromosome
• A61K 9/51 - Nanocapsules
• C12N 9/22 - Ribonucleases
• C12N 15/11 - DNA or RNA fragmentsModified forms thereof

Abstract

A process for making an interconnect of a group III-V semiconductor device includes the steps of applying a positive photoresist layer and an image-reversible photoresist layer, subjecting the image-reversible photoresist and positive photoresist layers to patternwise exposure, subjecting the image-reversible photoresist layer to image reversal bake, subjecting the image-reversible photoresist and positive photoresist layers to flood exposure, subjecting the image-reversible photoresist and positive photoresist layers to development, depositing a diffusion barrier layer, depositing a copper layer, and removing the image-reversible photoresist and positive photoresist layers.

IPC Classes  ?

• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• G03F 7/32 - Liquid compositions therefor, e.g. developers
• G03F 7/16 - Coating processesApparatus therefor
• G03F 7/20 - ExposureApparatus therefor
• G03F 7/38 - Treatment before imagewise removal, e.g. prebaking

Abstract

A method for manufacturing micro light-emitting diode chips includes the steps of: providing a to-be-divided light-emitting component, which includes a metal substrate and a plurality of micro light-emitting diode dies disposed on the metal substrate to permit the metal substrate to define a to-be-etched region among the micro light-emitting diode dies; and etching the metal substrate to remove the to-be-etched region so as to divide the light-emitting component into a plurality of the micro light-emitting diode chips.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 33/40 - Materials therefor
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

The present invention provides 11-arylcinnolino[2,3-f]phenanthridinium salt compounds and method for producing the same by highly regioselective synthesis of 11-phenylimino[2,3-f]phenanthridin-9-ium salts from 2-azobiaryls and alkenes under catalysis of palladium, through double oxidative C—H coupling of alkenes, to give the polycyclic cinnolinophenanthridinium salts in moderate yields. The reaction mechanism involves ortho C—H olefination of 2-azobiaryls by alkenes, intramolecular aza-Michael addition, β-hydride elimination, electrophilic palladation followed by intramolecular C—H activation and reductive elimination. The prepared quaternary ammonium salts are candidate materials for solution-processable OLED and bioimaging materials.

IPC Classes  ?

• C07D 471/04 - Ortho-condensed systems
• C07D 495/14 - Ortho-condensed systems

Abstract

Disclosed herein is a nanocomposite particle comprising a core-shell-shell nanoparticle, an encapsulated nanorod linked with the core-shell-shell nanoparticle, and a lipid layer encapsulating the core-shell-shell nanoparticle and the encapsulated nanorod. The core-shell nanoparticle comprises a phosphor core, an inner shell layer, an outer shell layer, and a cationic polymer. The encapsulated nanorod comprises a nanorod, and a mesoporous scaffold. According to embodiments of the present disclosure, the encapsulated nanorod is linked with the core-shell -shell nanoparticle via an electrostatic interaction between the cationic polymer and the mesoporous scaffold. Also disclosed are the uses of the nanocomposite in treating diseases, for example, cancers.

IPC Classes  ?

• A61B 6/00 - Apparatus or devices for radiation diagnosisApparatus or devices for radiation diagnosis combined with radiation therapy equipment
• A61K 49/00 - Preparations for testing in vivo
• A61K 49/18 - Nuclear magnetic resonance [NMR] contrast preparationsMagnetic resonance imaging [MRI] contrast preparations characterised by a special physical form, e.g. emulsions, microcapsules, liposomes

Abstract

A quasi-single-crystal film and its manufacturing method thereof are provided, in which a metal film having a preferred orientation of <111> on its surface is subjected to a mechanical stretching force, such that the crystal grains thereof are able to form in a much more orderly arrangement, and a quasi-single-crystal film having preferred orientations on three axes can be obtained. The proposed quasi-single-crystal film has preferred orientations of <211> and <110> on its stretching direction and a direction that is perpendicular to the stretching direction, respectively, and retains a preferred orientation of <111> on its surface. By employing the present invention, it is advantageous of manufacturing large-area quasi single crystal films having high anisotropy as well as growing two dimensional materials or developing of other anisotropic feature structures.

IPC Classes  ?

• C30B 29/66 - Crystals of complex geometrical shape, e.g. tubes, cylinders
• C30B 1/00 - Single-crystal growth directly from the solid state
• C30B 29/02 - Elements
• C30B 29/68 - Crystals with laminate structure, e.g. "superlattices"

Abstract

A text comparison method is adapted for comparing a query file with an existing file. The text comparison method includes: converting the existing file, by an irreversible method, to obtain a first intermediate file, wherein the first intermediate file includes a plurality of characters, and a number of different characters of the plurality of characters is a predetermined value; receiving a second intermediate file which is a file converted from the query file by the irreversible method; and according to a predetermined string length, comparing the second intermediate file with the first intermediate file by a high repeating-character comparison method to output a comparison result. Therefore, the second intermediate file can be created offline and then only the second intermediate file but not the original query file is submitted through internet for private text comparison.

IPC Classes  ?

• G06F 17/00 - Digital computing or data processing equipment or methods, specially adapted for specific functions
• G06F 16/903 - Querying
• G06F 16/14 - Details of searching files based on file metadata
• G06F 16/178 - Techniques for file synchronisation in file systems
• G06F 16/901 - IndexingData structures thereforStorage structures

Abstract

A separate quantization method of forming a combination of 4-bit and 8-bit data of a neural network is disclosed. When a training data set and a validation data set exist, a calibration manner is used to determine a threshold for activations of each of a plurality of layers of a neural network model, so as to determine how many of the activations to perform 8-bit quantization. In a process of weight quantization, the weights of each layer are allocated to 4-bit weights and 8-bit weights according to a predetermined ratio, so as to make the neural network model have a reduced size and a combination of 4-bit and 8-bit weights.

IPC Classes  ?

• G06N 3/063 - Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
• G06N 3/08 - Learning methods
• G06N 3/04 - Architecture, e.g. interconnection topology
• G06N 7/04 - Physical realisation

Abstract

The present invention provides a physiological information detection method for calculating a physiological value by using changes of a dynamic image. The detection method includes: acquiring detection data from a gray-scale value of the dynamic image, and transforming the detection data into frequency data. The detection method further includes: determining whether the frequency data meet a preset condition, and using a transformation model of a corresponding transformation combination accordingly to transform the frequency data into a physiological value. The present invention further provides a physiological information detection device applying the detection method.

IPC Classes  ?

• G06T 7/00 - Image analysis
• A61B 5/024 - Measuring pulse rate or heart rate

Abstract

A thermal dissipation structure for integrated circuits includes a semiconductor substrate, a thermal dissipation trench, a metal seed layer and a metal layer. The semiconductor substrate has a first surface and a second surface which is opposite to the first surface. Integrated circuits are located on and thermally coupled with the first surface. The thermal dissipation trench is formed within the second surface. The metal seed layer seals the thermal dissipation trench to define a thermal dissipation channel. The thermal dissipation channel includes an inlet and an outlet. The metal layer is an electroplated layer formed from the metal seed layer.

IPC Classes  ?

• H01L 23/46 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids

Abstract

Various examples are provided for disposable medical sensors that can be used for detection of SARS-CoV-2 antigen, cardiac troponin I, or other biosensing applications. In one example, a medical sensing system includes single-use disposable test strip comprising a functionalized sensing area configured to detect SARS-CoV-2 antigen and a portable sensing and readout device including pulse generation circuitry that can generate synchronized gate and drain pulses for detection and quantification of SARS-CoV-2 antigen in biological samples. In another example, a method includes providing a saliva sample to a functionalized sensing area configured to detect SARS-CoV-2 antigen, generating synchronized gate and drain pulses for a transistor, the gate pulse provided via electrodes of the functionalized sensing area, and sensing an output of the transistor that is a function of a concentration of SARS-CoV-2 antigen in the sample.

IPC Classes  ?

• G01N 27/414 - Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
• B01L 3/00 - Containers or dishes for laboratory use, e.g. laboratory glasswareDroppers
• C12Q 1/6825 - Nucleic acid detection involving sensors

Abstract

A system for analyzing brain tissue components based on magnetic resonance image. The system includes a memory and a processor. The memory stores instructions. The processor accesses and executes the instructions to perform the following: extracting maps of tissue from a brain magnetic resonance imaging (MRI) corresponding to normal subjects; averaging the maps of tissue according to a number of the normal subjects to generate reference maps that correspond to different tissues; receiving a brain MRI sample having a targeted region; and analyzing the brain MRI sample based on the reference maps and the targeted region to generate an analysis result, in which the analysis result indicates a ratio of tissues in the targeted region of the brain MRI sample.

IPC Classes  ?

• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• A61B 5/055 - Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fieldsMeasuring using microwaves or radio waves involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
• G06T 7/143 - SegmentationEdge detection involving probabilistic approaches, e.g. Markov random field [MRF] modelling
• G06T 7/11 - Region-based segmentation

Abstract

The invention relates to an electrochemical dephosphorylation technique for treating Alzheimer's disease and a use thereof. It comprises a gold electrode provided with a negative potential of −0.2 V to −0.6 V on a surface thereof.

IPC Classes  ?

• A61N 1/36 - Applying electric currents by contact electrodes alternating or intermittent currents for stimulation, e.g. heart pace-makers
• A61N 1/05 - Electrodes for implantation or insertion into the body, e.g. heart electrode

Abstract

Disclosed herein is a ganetespib-containing particle, which includes an active ingredient selected from ganetespib, a pharmaceutically acceptable salt of ganetespib, and a combination thereof, and an amphiphilic chitosan-based carrier carrying the active ingredient. Also disclosed herein are a pharmaceutical composition including the ganetespib-containing particle, and use of such pharmaceutical composition in treating cancer.

IPC Classes  ?

• A61K 31/4196 - 1,2,4-Triazoles
• A61K 47/36 - PolysaccharidesDerivatives thereof, e.g. gums, starch, alginate, dextrin, hyaluronic acid, chitosan, inulin, agar or pectin
• C07K 16/28 - Immunoglobulins, e.g. monoclonal or polyclonal antibodies against material from animals or humans against receptors, cell surface antigens or cell surface determinants
• A61P 35/00 - Antineoplastic agents
• A61K 9/14 - Particulate form, e.g. powders
• A61K 31/517 - PyrimidinesHydrogenated pyrimidines, e.g. trimethoprim ortho- or peri-condensed with carbocyclic ring systems, e.g. quinazoline, perimidine
• A61K 31/7068 - Compounds having saccharide radicals and heterocyclic rings having nitrogen as a ring hetero atom, e.g. nucleosides, nucleotides containing six-membered rings with nitrogen as a ring hetero atom containing condensed or non-condensed pyrimidines having oxo groups directly attached to the pyrimidine ring, e.g. cytidine, cytidylic acid
• A61K 31/12 - Ketones

Abstract

A light emitting diode device with flip-chip structure includes a transparent protective substrate, a transparent conductor layer, a glue layer, a group III-V stack layer, a first conductivity metal electrode, a second conductivity metal electrode and an insulating layer. The transparent conductor layer is formed on the transparent protective substrate. The glue layer bonds the transparent protective substrate and the transparent conductor layer. The group III-V stack layer and the first conductivity metal electrode are respectively formed on a first portion and a second portion of the transparent conductor layer. The second conductivity metal electrode is formed on a portion of the group III-V stack layer. The insulating layer covers exposed portions of the transparent conductor layer and the group III-V stack layer, and the insulating layer further covers portions of the first and second conductivity metal electrodes, so as to expose the first and second conductivity metal electrodes.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/42 - Transparent materials
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Abstract

An automatic protocol test method by reverse engineering from packet traces to extended finite state machine is disclosed. The method includes following steps: parsing the plurality of packets to extract a plurality of sessions; conducting a keyword analysis and a clustering algorithm to obtain protocol messages; initializing the protocol messages and merging equivalent states to obtain a finite state machine; extracting fields and values of the protocol messages to obtain a plurality of sub-datasets and adding a data guard and set of memories on the finite state machine to obtain the extended finite state machine.

IPC Classes  ?

• G06F 15/173 - Interprocessor communication using an interconnection network, e.g. matrix, shuffle, pyramid, star or snowflake
• H04L 12/26 - Monitoring arrangements; Testing arrangements

Abstract

A reinforcement learning method for frame-level bit allocation is disclosed. The reinforcement learning method includes steps of: (a) at a testing time, computing a state according to a plurality of features; (b) determining an action according to a policy; (c) determining a number of bits allocated to an i-th frame in a group of pictures (GOP) according to the action, a GOP-level bit budget and the state, wherein i is a positive integer; (d) encoding the i-th frame according to the number of bits allocated to the i-th frame in the GOP; and (e) repeating the steps (a)˜(d) until an end of the GOP.

IPC Classes  ?

• H04N 19/114 - Adapting the group of pictures [GOP] structure, e.g. number of B-frames between two anchor frames
• G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
• G06K 9/62 - Methods or arrangements for recognition using electronic means
• H04N 19/184 - Methods or arrangements for coding, decoding, compressing or decompressing digital video signals using adaptive coding characterised by the coding unit, i.e. the structural portion or semantic portion of the video signal being the object or the subject of the adaptive coding the unit being bits, e.g. of the compressed video stream

Abstract

A miniaturized sensing probe and a manufacturing method thereof are provided. The miniaturized sensing probe includes: a probe substrate including a probe part and a circuit connection part; a sensor disposed on the probe part and electrically connected to the circuit connection part; and a needle unit used to accommodate the probe part of the probe substrate; wherein the sensor performs sensing when placed into an analyte through the needle unit and transmits a sensing signal through the circuit connection part. The miniaturized sensing probe of the present invention may be easily placed into the analyte without the use of other instrument or surgery. This means is of benefit to a clinician performing an early diagnosis on a patient with a peripheral vascular disease or monitoring the biological value of the muscle during surgery in real time.

IPC Classes  ?

• A61B 5/1473 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using chemical or electrochemical methods, e.g. by polarographic means invasive, e.g. introduced into the body by a catheter
• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
• A61B 5/0205 - Simultaneously evaluating both cardiovascular conditions and different types of body conditions, e.g. heart and respiratory condition

Abstract

An antenna performance evaluation method is disclosed. The method includes the following steps: measuring plurality of throughput values of the to-be-tested antenna at the first angle under different average radiation signal-to-interference ratio (SIR). The average radiation SIR and throughput values are fitted to output the first fitted curve. The second throughput value is measured at a certain average radiation SIR of the second angle of the to-be-tested antenna. Calculating a difference value between the first throughput value and the second throughput value corresponding to the same average radiation SIR, and the difference value and the first fitting curve constitute the transition second fitting curve. Selecting different average radiation SIR is repeatedly, and measure the corresponding second throughput value, and the corresponding difference value is calculated to update the transition second fitting curve. When the difference value is lower than the preset error range, the final second fitting curve is outputted.

IPC Classes  ?

• H04B 17/336 - Signal-to-interference ratio [SIR] or carrier-to-interference ratio [CIR]
• H04B 17/391 - Modelling the propagation channel
• H04B 7/0413 - MIMO systems

Abstract

An antenna adjustment device and an antenna adjustment method for a mobile vehicle, in which main structure includes the mobile vehicle having a directional antenna, a photographic element and an epipolar line analysis component. The epipolar line analysis component establishes data connection with the directional antenna and the photographic element. The photographic element includes a photographic part and an image receiving processing part. With the above structure, the user can use the photographic element with the directional antenna to define an epipolar line of optimal connection efficiency with the base station on the image receiving processing part. When the connection is needed, the mobile vehicle is moved for adjusting an image of the base station imaged by the image receiving processing part to align to the epipolar line, so as to get the optimal connection efficiency.

IPC Classes  ?

• G06T 7/593 - Depth or shape recovery from multiple images from stereo images
• H04B 7/185 - Space-based or airborne stations
• H01Q 1/28 - Adaptation for use in or on aircraft, missiles, satellites, or balloons

Abstract

A semiconductor device includes a channel, source/drain structures, and a gate stack. The source/drain structures are on opposite sides of the channel. The gate stack is over the channel, and the gate stack includes a gate dielectric layer, a doped ferroelectric layer, and a gate electrode. The gate dielectric layer is over the channel. The doped ferroelectric layer is over the gate dielectric layer. The gate electrode is over the doped ferroelectric layer. A dopant concentration of the doped ferroelectric layer varies in a direction from the gate electrode toward the channel.

IPC Classes  ?

• H01L 29/51 - Insulating materials associated therewith
• H01L 29/66 - Types of semiconductor device
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups

Abstract

A liquid crystal lens includes at least two liquid crystal cells, and at least two electrode layer units. Each of the liquid crystal cells has a central portion, a first surrounding portion, and a second surrounding portion. Each of the electrode layer units is disposed to supply voltage to the respective liquid crystal cell to permit one of the liquid crystal cells to have a first radial gradient of refractive index in the central portion thereof, and to permit the other one of the liquid crystal cells to have a second radial gradient of refractive index in the first surrounding portion thereof, to thereby allow the two liquid crystal cells to cooperatively define an aperture of the liquid crystal lens.

IPC Classes  ?

• G02F 1/29 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the position or the direction of light beams, i.e. deflection

Abstract

A method for assessing driver fatigue is implemented by a processor and includes steps of: based on images of a driver captured by an image capturing device, obtaining an entry of physiological information that indicates a physiological state of the driver; based on one of the images of the driver, obtaining an entry of facial expression information that indicates an emotional state of the driver; based on one of the images of the driver, obtaining an entry of behavioral information that indicates driver behavior of the driver; and based on the entry of physiological information, the entry of facial expression information and the entry of behavioral information, obtaining a fatigue score that indicates a level of fatigue of the driver.

IPC Classes  ?

• G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
• G06V 20/59 - Context or environment of the image inside of a vehicle, e.g. relating to seat occupancy, driver state or inner lighting conditions
• A61B 5/024 - Measuring pulse rate or heart rate
• A61B 5/18 - Devices for psychotechnicsTesting reaction times for vehicle drivers
• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• A61B 5/16 - Devices for psychotechnicsTesting reaction times
• G06V 40/16 - Human faces, e.g. facial parts, sketches or expressions
• B60Q 9/00 - Arrangement or adaptation of signal devices not provided for in one of main groups

Abstract

A comparator circuit with low power consumption and low kickback noise includes a first dynamic comparator and a second dynamic comparator. The first dynamic comparator is a pre-amplifier for the second dynamic comparator. An enable switch which is connected to the first dynamic comparator has a control terminal connected to a resistance device. The resistance device and the enable switch form a RC delay circuit to reduce the kickback noise of the comparator circuit. Since the comparator circuit is composed of dynamic comparators, the power consumption of the comparator circuit is lower.

IPC Classes  ?

• H03K 5/22 - Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
• H03K 5/24 - Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
• H03K 5/00 - Manipulation of pulses not covered by one of the other main groups of this subclass

Abstract

2 to the amphiphilic chitosan.

IPC Classes  ?

• C08B 37/08 - ChitinChondroitin sulfateHyaluronic acidDerivatives thereof
• G02B 1/04 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of organic materials, e.g. plastics

Abstract

divide secondary channel coefficient matrices, which are then substituted into a snapshot vector matrix equation to generate a snapshot vector matrix for calculating an angle of the target. The signal processing method can establish an optimal secondary channel coefficient matrix arrangement by using a special signal preprocessing manner, to improve the resolution and accuracy of the estimated angle parameter of the target.

IPC Classes  ?

• G01S 7/35 - Details of non-pulse systems
• G01S 13/06 - Systems determining position data of a target
• G01S 13/00 - Systems using the reflection or reradiation of radio waves, e.g. radar systemsAnalogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified

Abstract

A method for fabricating heteroepitaxial semiconductor material on a mica sheet is disclosed. Firstly, a mica substrate is provided. Then, at least one semiconductor film is deposited on the mica substrate to form a flexible substrate whose flexibility is applied to various applications, such as wearable devices, portable photoelectric equipment, or improving the speed and bandwidth of commercial and military systems, such that the flexible substrate has the competitiveness in the market.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.

IPC Classes  ?

• H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
• H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof

Abstract

A wireless charging device includes a wireless charging transmitter transmitting a charging signal to a signal gain module to generate at least one gain signal. The signal gain module includes an insulation substrate with an upper surface thereof provided with a first conductive wire. The first conductive wire makes at least one turns arranged along the inner edge of the insulation substrate. The lower surface of the insulation substrate is provided with a second conductive wire whose position corresponds to the position of the first conductive wire. A connecting element is arranged between the first conductive wire and the second conductive wire, such that the first conductive wire is electrically connected to the second conductive wire through the connecting element. The present invention provides a charging signal with high intensity to avoid the low charging efficiency caused by deflection and too long a distance.

IPC Classes  ?

• H02J 7/02 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from AC mains by converters
• H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
• H01F 38/14 - Inductive couplings
• H02J 50/10 - Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
• A61N 1/36 - Applying electric currents by contact electrodes alternating or intermittent currents for stimulation, e.g. heart pace-makers
• A61N 1/378 - Electrical supply

Abstract

A near-eye augmented reality device includes an imaging unit including a plurality of imaging portions having birefringence and positive diopter, a lighting unit, and a polarization-control unit. The lighting unit is spaced apart from the imaging unit, and includes a base plate and a plurality of pixel modules. The base plate has a first surface proximal to the imaging unit, and an opposite second surface. Each of the pixel modules is operative to produce an imaging light directed towards the imaging unit. The polarization-control unit is operative to control polarization states of the image light and an ambient light.

IPC Classes  ?

• G02B 27/00 - Optical systems or apparatus not provided for by any of the groups ,
• G02B 27/01 - Head-up displays
• G02B 27/28 - Optical systems or apparatus not provided for by any of the groups , for polarising
• G06T 19/00 - Manipulating 3D models or images for computer graphics

Abstract

A neural-signal amplifier includes an amplifier, a switched-capacitor circuit-input unit, a switched-capacitor feedback-circuit unit, and a switched-capacitor circuit-output unit. Each of the switched-capacitor circuit-input unit, the switched-capacitor feedback-circuit unit, and the switched-capacitor circuit-output unit includes a plurality of differential switches, a plurality of common mode switches, and a plurality of capacitors. By controlling the switches to turn on or performing the switched-capacitor operation, the neural-signal amplifier is controlled to suppress the DC drift and reconstruct the DC input of the common-mode power supply.

IPC Classes  ?

• H03F 1/30 - Modifications of amplifiers to reduce influence of variations of temperature or supply voltage
• H03F 3/45 - Differential amplifiers
• A61B 5/24 - Detecting, measuring or recording bioelectric or biomagnetic signals of the body or parts thereof
• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• A61B 5/31 - Input circuits therefor specially adapted for particular uses for electroencephalography [EEG]

Abstract

A people-flow analysis system includes an image source, a computing device, and a host. The image source captures a first image and a second image. The computing device is connected to the image source. The computing device identifies the first image according to a data set to generate a first detecting image. The first detecting image has a position box corresponding to a pedestrian in the first image. The computing device generates a tracking image according to the data set and a difference between the first detecting image and the second image. The tracking image has another position box corresponding to a pedestrian in the second image. The host is connected to the computing device and generates a people-flow list according to the first detecting image and the tracking image.

IPC Classes  ?

• G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
• G06T 11/20 - Drawing from basic elements, e.g. lines or circles
• G06T 7/292 - Multi-camera tracking

Abstract

A biological signal analyzing device configured to generate a first detection image or a second detection image is provided. The biological signal analyzing device includes a light-incident surface, a light-emitting surface and a plurality of optical-resonance structures. The sample is placed near the light incident surface, and receives a first light through the sample. The light resonance structures are configured to process the first light and generate a second and third light. The second light emits from the light emitting surface, and adapted to form the first detection image corresponding to the sample, and the third light emits from the light incident surface, and adapted to form the second detection image corresponding to the sample. The optical resonance structures vary their thickness along the first direction or vary the width along the second direction. A biological sensing apparatus, a sensing method and a fabrication method are also provided.

IPC Classes  ?

• G01N 21/41 - RefractivityPhase-affecting properties, e.g. optical path length
• G01N 33/483 - Physical analysis of biological material

Abstract

42 contained in the tear sample of the test subject.

IPC Classes  ?

• C07H 21/04 - Compounds containing two or more mononucleotide units having separate phosphate or polyphosphate groups linked by saccharide radicals of nucleoside groups, e.g. nucleic acids with deoxyribosyl as saccharide radical
• G01N 33/68 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving proteins, peptides or amino acids
• G01N 21/78 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
• G01N 33/58 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving labelled substances
• G01N 27/02 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance

Abstract

Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.

IPC Classes  ?

• H01L 51/10 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier - Details of devices
• H01L 51/30 - Selection of materials

Abstract

The invention is related to a method of three-dimensional face reconstruction by inputting a single face image to reconstruct a three-dimensional face model, therefore, the human face image is seen at various angles of three-dimensional face through rotating the model images.

IPC Classes  ?

• G06T 15/20 - Perspective computation
• G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints

Abstract

Two algorithms for different functional-split network models are provided, which are the CU-based (central unit based) beam allocation and admission control algorithm (CU-BAACA) and the DU-based (distributed unit based) beam allocation and admission control algorithm (DU-BAACA). Difference between the CU-BAACA and DU-BAACA includes whether the algorithm is implemented at the CU site or at the DU site. Proposed algorithms aim to optimize DUs' quality of experience (QoE) by admission control to determine the amount of data from application layer entering into traffic queue and allocating beam in physical layer at the fronthaul network between CU and DUs. On the other hand, queueing delay and queue stability are taken into consideration to maintain the system steadiness. Simulation results compare performance of two functional split models to find the appropriate scenario for each function split option, which provide technical requirement and applicability of the proposed algorithms for practical system.

IPC Classes  ?

• H04W 72/04 - Wireless resource allocation
• H04W 80/02 - Data link layer protocols
• H04W 28/02 - Traffic management, e.g. flow control or congestion control
• H04W 80/08 - Upper layer protocols
• G06F 9/455 - EmulationInterpretationSoftware simulation, e.g. virtualisation or emulation of application or operating system execution engines

Abstract

A system of referenceless clock and data recovery and a frequency detector thereof has been provided. The output clock of the system initially works at the lowest frequency, the frequency of the output clock is monotonically increased in accordance with the control of the frequency detector, thereby gradually approximating a target value. The edge extraction circuit receives the data signal and the clock signal, identifies the transition edges of the signals and generates a data transition signal and a clock transition signal representing the transition edges of the data signal and the transition edges of the clock signal respectively. The edge detector then determines the data period of the data signal and the clock period of the clock signal. When the data period is smaller than half of the clock period, the edge detector generates a frequency-up signal and the frequency of the output clock is increased.

IPC Classes  ?

• H03L 7/08 - Details of the phase-locked loop
• H03L 7/099 - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
• H03L 7/087 - Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal using at least two phase detectors or a frequency and phase detector in the loop

Abstract

An atmospheric water generator for extracting water droplets from ambient air includes an insulating substrate, a plurality of electrode film units, and a liquid crystal/polymer composite film. Each of surface regions of the liquid crystal/polymer composite film has a plurality of liquid crystal molecules each having a hydrophilic functional group and a hydrophobic moiety. Each of the surface regions normally has one of hydrophilic and hydrophobic properties. When a voltage is applied to one of the electrode film units, the respective surface region is switched to have the other one of hydrophilic and hydrophobic properties, to thereby allow the water droplets condensed from the ambient air to move on the surface regions.

IPC Classes  ?

• B01D 5/00 - Condensation of vapoursRecovering volatile solvents by condensation
• B01D 53/26 - Drying gases or vapours
• F28F 19/04 - Preventing the formation of deposits or corrosion, e.g. by using filters by using coatings, e.g. vitreous or enamel coatings of rubberPreventing the formation of deposits or corrosion, e.g. by using filters by using coatings, e.g. vitreous or enamel coatings of plastics materialPreventing the formation of deposits or corrosion, e.g. by using filters by using coatings, e.g. vitreous or enamel coatings of varnish
• E03B 3/28 - Methods or installations for obtaining or collecting drinking water or tap water from humid air
• C09K 19/20 - Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing at least two benzene rings linked by a chain containing carbon and oxygen atoms as chain links, e.g. esters
• C09K 19/56 - Aligning agents
• H01M 8/04492 - HumidityAmbient humidityWater content
• H01M 8/04119 - Arrangements for control of reactant parameters, e.g. pressure or concentration of gaseous reactants with simultaneous supply or evacuation of electrolyteHumidifying or dehumidifying
• H01M 8/04537 - Electric variables
• H01M 50/489 - Separators, membranes, diaphragms or spacing elements inside the cells, characterised by their physical properties, e.g. swelling degree, hydrophilicity or shut down properties
• H01M 8/04186 - Arrangements for control of reactant parameters, e.g. pressure or concentration of liquid-charged or electrolyte-charged reactants

Abstract

An optical encoding device includes a code disc, an optical signal generator, (K+1) optical sensors and an encoding circuit. The code disk has K gratings arranged in a row. The total width of the optical sensors is equal to the total width W of the gratings. The optical sensor receives the optical signal through the code disk. Each optical sensor converts the optical signal into a voltage signal and outputs the voltage signal. The encoding circuit receives and normalizes the voltage signals to generate (K+1) voltage values. During a period in which the code disk rotates by a distance of 2W/K, the encoding circuit compares the voltage values with a preset value to generate at least two binary codes. When K is odd, the preset value is 0.5, and when K is even, the preset value is 0.55. The present invention can increase an absolute row resolution of the code disc.

IPC Classes  ?

• G01D 5/347 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales

Abstract

A multi-level pulse-amplitude modulation receiver system includes an analog equalizer, a digital equalizer, an automatic level tracking engine and an automatic gain controller. The analog equalizer and the automatic gain controller perform signal compensation on a multi-bit quasi-attenuation signal to generate a multi-level compensation signal. The digital equalizer receives the multi-level compensation signal, the positive threshold voltage and the negative threshold voltage, and thereby converts the multi-level compensation signal into a plurality of digital data. The automatic level tracking engine uses the digital data to generate a positive threshold voltage, a negative threshold voltage, at least two positive DC level voltages, and at least two negative DC level voltages, and the positive threshold voltage is an average of the two positive DC level voltages to avoid the nonlinear effect of the analog front end.

IPC Classes  ?

• H04L 25/49 - Transmitting circuitsReceiving circuits using code conversion at the transmitterTransmitting circuitsReceiving circuits using predistortionTransmitting circuitsReceiving circuits using insertion of idle bits for obtaining a desired frequency spectrumTransmitting circuitsReceiving circuits using three or more amplitude levels
• H04B 7/0417 - Feedback systems
• H04L 27/38 - Demodulator circuitsReceiver circuits
• H04B 7/005 - Control of transmissionEqualising
• H04B 17/336 - Signal-to-interference ratio [SIR] or carrier-to-interference ratio [CIR]
• H04L 27/04 - Modulator circuitsTransmitter circuits

Abstract

Pressure assisted positioning method and device thereof are disclosed in the present invention. The pressure assisted positioning device is exerted for positioning a target under the circumstance of altitude change since the target enters a specific region. The pressure assisted positioning method includes the following steps. First, confirming the entrance of the specific region of the target and detecting a plurality of pressure data. Then, calculating a pressure variation between the two selected pressure data. At last, comparing the pressure variation to a threshold. An altitude change within the specific region is confirmed as the pressure variation is greater than the threshold. On the other hand, as the pressure variation is greater than the threshold, it refers to no altitude change within the specific region. Wherein, confirming the entrance of the specific region of the target determines via the result of detecting the target enters a region having at least a distance with a reference location of a structure with altitude change illustrated according to a map information. The pressure assisted positioning device of the present invention can not only directly detect the actual pressure data but calibrate the pressure variation information according to the pressure data and the moving statuses of the target as well. Comparing to the conventional device, the method and device of the present invention can calculate and calibrate the pressure variation information independently without any external pressure data from the barometric station.

IPC Classes  ?

• G01C 5/06 - Measuring heightMeasuring distances transverse to line of sightLevelling between separated pointsSurveyors' levels by using barometric means
• G01C 21/28 - NavigationNavigational instruments not provided for in groups specially adapted for navigation in a road network with correlation of data from several navigational instruments

Abstract

A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.

IPC Classes  ?

• G01N 27/407 - Cells and probes with solid electrolytes for investigating or analysing gases
• G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
• G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid

Abstract

An optical displacement sensing system is provided. With configuration of an optical sensor disposed on a displacement platform and in cooperation with a broadband light source and an optical spectrum analyzer, when the displacement platform moves, the waveguide grating of the optical sensor is resonated and the reflected light provided with a resonance wavelength is formed. The waveguide grating has the plurality of grating periods, and when the displacement platform moves to a different position to make the broadband light source correspond to a different grating period, the position can correspond to the different resonance wavelength. Therefore, according to the aforementioned configuration, the position is determined according to the different resonance wavelength, instead of using an optical encoder; furthermore, the micrometer-scale or nanometer-scale displacement detection is achieved.

IPC Classes  ?

• G01B 11/04 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness specially adapted for measuring length or width of objects while moving
• G01D 5/38 - Forming the light into pulses by diffraction gratings
• G01D 5/26 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light
• G02B 6/35 - Optical coupling means having switching means
• G02B 27/10 - Beam splitting or combining systems

Abstract

A semiconductor device including a field effect transistor (FET) device includes a substrate and a channel structure formed of a two-dimensional (2D) material over the substrate. Source and drain contacts are formed partially over the 2D material. A first dielectric layer is formed at least partially over the channel structure and at least partially over the source and drain contacts. The first dielectric layer is configured to trap charge carriers. A second dielectric layer is formed over the first dielectric layer, and a gate electrode is formed over the second dielectric layer.

IPC Classes  ?

• H01L 21/76 - Making of isolation regions between components
• H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/786 - Thin-film transistors
• H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
• H01L 29/47 - Schottky barrier electrodes
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
• H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
• H01L 29/66 - Types of semiconductor device

Abstract

An electrically tunable focusing achromatic lens includes a first liquid crystal cell, a second liquid crystal cell, and first and second electrode layer units which have two predetermined patterns for permitting two predetermined radially varying electric fields to be generated to across the first and second liquid crystal cells, respectively, to thereby allow one of the first and second liquid crystal cells to acquire a predetermined positive optical power and the other one of the first and second liquid crystal cells to acquire a predetermined negative optical power. When an incident light passes through the first and second liquid crystal cells, chromatic aberration of the first liquid crystal cell can be counterbalanced by that of the second liquid crystal cell.

IPC Classes  ?

• G02F 1/29 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the position or the direction of light beams, i.e. deflection
• G02F 1/1347 - Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells

Abstract

The present invention provides a method for Spherical Camera Image Stitching. By using two fisheye lens to catch two fisheye images and then being developed into three pairs of flat figures based on Segmented Sphere Projection (SSP) method. Thereafter each corresponding pair is stitched based on a similar-edge method, and then three pairs are combined to form a panoramic image. At the end, the combined panoramic image is projected to a 3-D ball sphere space.

IPC Classes  ?

• H04N 7/00 - Television systems
• G06T 3/40 - Scaling of whole images or parts thereof, e.g. expanding or contracting
• H04N 5/232 - Devices for controlling television cameras, e.g. remote control
• H04N 5/265 - Mixing
• G06T 7/33 - Determination of transform parameters for the alignment of images, i.e. image registration using feature-based methods
• G06T 5/00 - Image enhancement or restoration
• G06T 3/00 - Geometric image transformations in the plane of the image
• H04N 5/262 - Studio circuits, e.g. for mixing, switching-over, change of character of image, other special effects

Abstract

In a post-quantum asymmetric key generation method and system, a processing unit generates, based on a prime and an arithmetic function or a classical string, a prime vector which has an infinite number of components; generates a prime array based on the prime vector; generates an associated matrix based on the prime array; obtains, based on the associated matrix and a first reference prime, a first reference inverse prime array that serves as a private key; and obtains a public key that is paired with the private key based on a second reference inverse prime array. The second reference inverse prime array is obtained based on the associated matrix, the first reference prime, a second reference prime, and a randomization array.

IPC Classes  ?

• H04L 9/08 - Key distribution
• H04L 9/30 - Public key, i.e. encryption algorithm being computationally infeasible to invert and users' encryption keys not requiring secrecy

Abstract

A semiconductor device including a field effect transistor (FET) device includes a substrate and a channel structure formed of a two-dimensional (2D) material over the substrate. Source and drain contacts are formed partially over the 2D material. A first dielectric layer is formed at least partially over the channel structure and at least partially over the source and drain contacts. The first dielectric layer is configured to trap charge carriers. A second dielectric layer is formed over the first dielectric layer, and a gate electrode is formed over the second dielectric layer.

IPC Classes  ?

• H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/786 - Thin-film transistors
• H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
• H01L 29/47 - Schottky barrier electrodes
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
• H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
• H01L 29/66 - Types of semiconductor device

Abstract

A low-density parity-check code scaling method is disclosed. The method includes following steps: obtaining the original low-density parity-check matrix; forming the permutation matrices with the random row shift or the random column shift to the identity matrix; replacing the component codes by the permutation matrices and the all-zero matrix to form the extended low-density parity-check matrix; adjusting the code length and the code rate to form the global coupled low-density parity-check matrix; and outputting the global coupled low-density parity-check code.

IPC Classes  ?

• H03M 13/00 - Coding, decoding or code conversion, for error detection or error correctionCoding theory basic assumptionsCoding boundsError probability evaluation methodsChannel modelsSimulation or testing of codes
• H03M 13/11 - Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits using multiple parity bits
• H03M 13/15 - Cyclic codes, i.e. cyclic shifts of codewords produce other codewords, e.g. codes defined by a generator polynomial, Bose-Chaudhuri-Hocquenghem [BCH] codes

Abstract

A method for forming a nanodevice sensing chip includes forming nanodevices having a sensing region capable of producing localized Joule heating. Individual nanodevice is electrical-biased in a chemical vapor deposition (CVD) system or an atomic layer deposition (ALD) system enabling the sensing region of the nanodevice produce localized Joule heating and depositing sensing material only on this sensing region. A sensing chip is formed via nanodevices with sensing region of each nanodevice deposited various materials separately. The sensing chip is also functioned under device Joule self-heating to interact and detect the specific molecules.

IPC Classes  ?

• G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
• H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
• H01L 21/8234 - MIS technology
• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
• H01L 29/66 - Types of semiconductor device
• H01L 29/786 - Thin-film transistors
• G01N 27/00 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

An image tracking method of the present invention includes the following steps: (A) obtaining a plurality of original images by using an image capturing device; (B) transmitting the plurality of original images to a computing device, and generating a position box based on a preset image set; (C) obtaining an initial foreground image including a target object, and an identified foreground image is determined based on a pixel ratio and a first threshold; (D) obtaining a feature and obtaining a first feature score based on the feature of the identified foreground images; and (E) generating a target object matching result based on the first feature score and a second threshold, and recording a moving trajectory of the target object based on the target object matching result.

IPC Classes  ?

• G06T 7/20 - Analysis of motion
• G06T 5/20 - Image enhancement or restoration using local operators
• G06K 9/62 - Methods or arrangements for recognition using electronic means
• G06K 9/38 - Quantising the analogue image signal

Abstract

A fan device including high voltage power source, conductive blade, first electrode and a resistance device is provided. Connecting side of the conductive blade is connected to first electric contact of the high voltage power source, and the conductive blade further includes a vibration side, wherein the conductive blade is extended from the connecting side to the vibration side along a first direction. The first electrode electrically connected to the second electric contact of the high voltage power source. The first electrode is disposed on a side of the vibration side of the conductive blade, and located in the vibrating range of the vibration side. The resistance device is connected between the conductive blade and the second electric contact in series.

IPC Classes  ?

• F04D 33/00 - Non-positive-displacement pumps with other than pure rotation, e.g. of oscillating type
• B03C 3/45 - Collecting-electrodes
• F04D 29/58 - CoolingHeatingDiminishing heat transfer
• F04D 29/66 - Combating cavitation, whirls, noise, vibration, or the likeBalancing
• H01T 23/00 - Apparatus for generating ions to be introduced into non-enclosed gases, e.g. into the atmosphere
• H01T 19/00 - Devices providing for corona discharge
• B03C 3/38 - Particle charging or ionising stations, e.g. using electric discharge, radioactive radiation or flames

Abstract

A recycling system and a method based on deep-learning and computer vision technology are disclosed. The system includes a trash sorting device and a trash sorting algorithm. The trash sorting device includes a trash arraying mechanism, trash sensors, a trash transfer mechanism and a controller. The trash arraying mechanism is configured to process trash in a batch manner. The controller drives the trash arraying mechanism according to the signals of trash sensors and controls the sorting gates of the trash sorting mechanism to rotate. The trash sorting algorithm makes use of the images of trash, wherein the images are taken by cameras in different directions. The trash sorting algorithm includes a dynamic object detection algorithm, an image pre-processing algorithm, an identification module and a voting and selecting algorithm. The identification module is based on the convolutional neural networks (CNNs) and may at least identify four kinds of trash.

IPC Classes  ?

• G06N 3/04 - Architecture, e.g. interconnection topology
• G06N 20/20 - Ensemble learning
• G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
• G06T 5/50 - Image enhancement or restoration using two or more images, e.g. averaging or subtraction
• B65F 1/00 - Refuse receptacles
• G06T 7/00 - Image analysis

Abstract

The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.

IPC Classes  ?

• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 29/66 - Types of semiconductor device
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/165 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group in different semiconductor regions
• H01L 29/49 - Metal-insulator semiconductor electrodes
• H01L 29/73 - Bipolar junction transistors

Abstract

The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.

IPC Classes  ?

• H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/66 - Types of semiconductor device
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/165 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group in different semiconductor regions
• H01L 29/49 - Metal-insulator semiconductor electrodes
• H01L 29/73 - Bipolar junction transistors

Abstract

An operation method of a robot for leading a follower to a destination within an open space includes: calculating a distance between the follower and the robot; when it is determined that the distance is not greater than a threshold, determining a pre-movement location of the robot in the open space and an orientation of the robot, and calculating a linear speed and an angular speed for the robot based on the pre-movement location and the orientation of the robot and the destination; moving according to the linear speed and the angular speed; determining whether the robot has arrived at the destination according to the current position; and repeating the previous steps when it is determined that the robot has not arrived at the destination.

IPC Classes  ?

• G01C 22/00 - Measuring distance traversed on the ground by vehicles, persons, animals or other moving solid bodies, e.g. using odometers or using pedometers
• G05D 1/00 - Control of position, course, altitude or attitude of land, water, air or space vehicles, e.g. using automatic pilots
• G05D 1/02 - Control of position or course in two dimensions

Abstract

An electron microscope specimen includes a first electron-transport layer, a second electron-transport layer, a spacer layer, and a carrier layer. The second electron-transport layer has a first opening, a second opening, and a viewing area, wherein the viewing area is between the first opening and the second opening. The spacer layer is sandwiched between the first electron-transport layer and the second electron-transport layer, and the spacer layer has an accommodating space communicating with the first opening and the second opening. The carrier layer is disposed on the second electron-transport layer, and has a viewing window, a first injection hole, and a second injection hole, wherein the viewing window is substantially aligned with the viewing area and the accommodating space, and the first injection hole and the second injection hole respectively communicate with the first opening and the second opening.

IPC Classes  ?

• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• H01J 37/26 - Electron or ion microscopesElectron- or ion-diffraction tubes

Abstract

The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.

IPC Classes  ?

• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/66 - Types of semiconductor device
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/165 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group in different semiconductor regions
• H01L 29/49 - Metal-insulator semiconductor electrodes
• H01L 29/73 - Bipolar junction transistors

Abstract

The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.

IPC Classes  ?

• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 29/66 - Types of semiconductor device
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/165 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group in different semiconductor regions
• H01L 29/49 - Metal-insulator semiconductor electrodes
• H01L 29/73 - Bipolar junction transistors

Abstract

A manufacturing method of amphiphilic macromolecules is provided. The method includes: reacting the first acrylic acid with N,N′-carbonyldiimidazole to obtain a modified acrylic acid derivative; and reacting the modified acrylic acid derivative with the siloxane derivative to obtain amphiphilic macromolecules. Wherein, the terminal of the first acrylic acid has a hydroxyl group. Wherein, the siloxane derivative is a hydroxyl-terminated, acrylamide-terminated, epoxy-terminated or amine-terminated polysiloxane molecule.

IPC Classes  ?

• C08G 77/44 - Block- or graft-polymers containing polysiloxane sequences containing only polysiloxane sequences
• C08G 77/442 - Block- or graft-polymers containing polysiloxane sequences containing vinyl polymer sequences
• G02B 1/04 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of organic materials, e.g. plastics
• C08J 3/24 - Crosslinking, e.g. vulcanising, of macromolecules
• C08G 77/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon

Abstract

4) with appropriate bias on the control gate of the programming gate structure. The stored data may be sensed by sensing the channel current through the SAUG FinFET in response to a bias on the switching gate of the switching gate structure.

IPC Classes  ?

• H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/225 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
• H01L 29/66 - Types of semiconductor device