The polishing pad according to an embodiment comprises a top-pad that is brought into contact with a wafer to perform polishing and a sub-pad that is located on one side of the top-pad, wherein the polishing rate at a distance of 95 mm from the center of the wafer in the polishing rate profile in a CMP process for a silicon oxide layer is greater than the polishing rate at a distance of 85 mm from the center of the wafer. As a result, the polishing rate and polishing flatness can be enhanced; in particular, the polishing rate profile characteristics of the polishing pad edge are excellent.
The polishing pad according to an embodiment can reduce noise and vibration in a specific frequency range. Accordingly, the polishing pad has excellent sound absorption characteristics since the maximum sound absorption coefficient satisfies 0.1 or more as measured at a frequency of 500 Hz to 4,000 Hz according to Equation 1. Thus, since it can minimize energy loss caused by heat energy or vibration energy in a CMP polishing process, it has an excellent polishing rate.
The embodiment relates to a polishing pad that comprises a polishing layer. When pyrolysis oil obtained by pyrolyzing the polishing layer at 320° C. for 6 hours is analyzed by combustion-ion chromatography (C-IC) in accordance with the IEC 62321-3-2 standard, the content of chlorine (CI) is less than 10,000 ppm. Further, the pyrolysis oil can be used as a high-quality energy source through a refining process.
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
C10B 53/07 - Destructive distillation, specially adapted for particular solid raw materials or solid raw materials in special form of synthetic polymeric materials, e.g. tyres
4.
POLISHING PAD WITH IMPROVED SLURRY FLOWABILITY AND PROCESS FOR PREPARING A SEMICONDUCTOR DEVICE USING THE SAME
As specially designed second grooves in a radial form are adopted in addition to first grooves in a concentric form in the polishing pad according to an embodiment, slurry flowability can be improved, and wafer profile and polishing rate can be changed. Accordingly, the polishing pad according to the embodiment can be used in the fabrication of semiconductor devices to enhance process efficiency and product quality.
The present invention relates to an environmentally friendly polishing pad and to a process for preparing the same. The polishing pad prepared from a polyurethane resin comprising a bio-based polymer polyol has excellent environmental friendliness and has physical properties such as hardness and modulus required for a CMP process. Thus, it can be used in the manufacture of semiconductor substrates to demonstrate excellent performance.
In the polishing pad according to an embodiment, the particle size of debris obtained during conditioning and the zeta potential of a debris solution are adjusted to specific ranges. As a result, it is possible to minimize the occurrence of defects and scratches during a CMP process while reducing the size of debris, thereby maintaining excellent physical properties and performance of the polishing pad.
The embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, to a process for preparing the same, and to a process for preparing a semiconductor device using the same. The polishing pad according to the embodiment adjusts the surface roughness characteristics of the polishing pad after polishing, whereby the polishing rate can be enhanced, and the surface residues, surface scratches, and chatter marks of the wafer can be remarkably reduced.
The polishing pad according to an embodiment has a chlorine content adjusted to a certain range, whereby it is possible to reduce the size of debris while maintaining excellent physical properties and performance of the polishing pad, thereby minimizing the occurrence of defects and scratches during a chemical mechanical polishing (CMP) process.
The embodiment relates to a polishing pad for use in a chemical mechanical planarization process of semiconductor devices. The polishing pad comprises a top pad layer, wherein the polishing pad has a total biomass content of 1 to 50% by weight as measured according to the ASTM D 6866 standard; thus, it can be environmentally friendly.
The present invention provides a polishing pad, which includes a polishing layer including a first surface that is a polishing surface and a second surface that is the back surface of the first surface and including first through holes formed to penetrate from the first surface to the second surface; windows placed within the first through holes; and a support layer placed on the side of the second surface of the polishing layer, including a third surface that is placed on the side of the polishing layer and a fourth surface that is the back surface of the third surface, and including second through holes formed to penetrate from the third surface to the fourth surface and connected to the first through holes. The windows include a first region where the height of a top surface is lower than the height of the first surface.
The embodiment relates to a polishing pad that comprises a polishing layer. When pyrolysis oil obtained from the polishing pad is analyzed according to the KS M 2457 standard, the content of chlorine components is 13,000 mg/kg or more. The pyrolysis oil can be used as a high-quality heat source through a refining process. Accordingly, the embodiment can contribute to improving environmental problems while increasing the recycling rate of polishing pads.
C10G 1/06 - Production of liquid hydrocarbon mixtures from oil shale, oil-sand, or non-melting solid carbonaceous or similar materials, e.g. wood, coal by destructive hydrogenation
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
12.
POLISHING PAD AND METHOD OF MONITORING A POLISHING PROCESS USING THE SAME
The embodiment relates to a polishing pad that comprises a top pad layer. The top pad layer comprises a light transmitting region for monitoring a change in the state of the polishing pad. The embodiment can efficiently monitor a change in the state of the polishing pad while the polishing process is carried out.
The embodiments provide a process for preparing a polishing sheet, a polishing pad using the same, and a process for preparing a semiconductor device using the same. The process for preparing a polishing sheet comprises forming a pattern on the surface of a polymer sheet and winding the patterned polymer sheet to form a wound roll in a cylindrical shape. Thus, there are great advantages in that it is possible to control the size and distribution ratio of a fine and uniform pattern at a desired location in an economical and efficient way and to freely design the type, size, structure, physical properties, and the like of the polishing sheet according to the purpose, whereby the application field can be expanded, and a bulk structure can be manufactured.
A conditioning device includes: an ejector for ejecting steam to a rotating polishing pad; and an ejector support supporting the ejector. The ejector includes a plurality of nozzles for ejecting the steam to the polishing pad and a nozzle heater for heating the plurality of nozzles. The nozzle heater is configured to heat nozzles disposed to correspond to a peripheral region of the polishing pad, among the plurality of nozzles, to a higher temperature than nozzles disposed to correspond to a central region of the polishing pad among the plurality of nozzles.
The present invention discloses a polishing pad comprising a laminate composed of a polishing layer, an adhesive layer, and a cushion layer, wherein the cushion layer has a water absorption rate of 100% or less, and a process for manufacturing the polishing pad.
Through a combination of a multi-stage adhesive layer structure, a compressed region structure, and a barrier layer, the polishing pad according to the present disclosure can minimize the leakage of liquid components flowing through the interface between the window and the polishing pad and realize excellent long-term durability without leakage even when substantially applied to a polishing process for a long time. In the method for manufacturing a semiconductor device, the specific structure having the window of the polishing pad applied thereto as described above is combined with the optimal process conditions related to the polishing process so that the process efficiency can be further improved, and excellent quality can be secured in terms of polishing rate, polishing flatness, defect prevention, and the like.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
17.
POLISHING PAD WITH WINDOW AND METHOD OF MANUFACTURING THE SAME
This invention relates to a polishing pad and a method for manufacturing the same. The polishing pad may include a top pad layer and a window block. The top pad layer may include a groove pattern formed on an upper surface of the top pad layer. A first hole may be formed through the top pad layer. The window block may be inserted into the first hole. The top pad layer and the window block may have a structure coincided with following Formula 1.
This invention relates to a polishing pad and a method for manufacturing the same. The polishing pad may include a top pad layer and a window block. The top pad layer may include a groove pattern formed on an upper surface of the top pad layer. A first hole may be formed through the top pad layer. The window block may be inserted into the first hole. The top pad layer and the window block may have a structure coincided with following Formula 1.
1.1
≤
Gap
+
Thk
RTPC
Thk
grv
≤
3.
Formula
1
This invention relates to a polishing pad and a method for manufacturing the same. The polishing pad may include a top pad layer and a window block. The top pad layer may include a groove pattern formed on an upper surface of the top pad layer. A first hole may be formed through the top pad layer. The window block may be inserted into the first hole. The top pad layer and the window block may have a structure coincided with following Formula 1.
1.1
≤
Gap
+
Thk
RTPC
Thk
grv
≤
3.
Formula
1
In Formula 1, the gap may indicate a height difference between an upper surface of the top pad layer and an upper surface of the window block, the ThkRTPC may indicate a thickness of the window block, and the Thkgrv may indicate a depth of the groove pattern.
The present disclosure is to provide a polishing pad which is capable of providing physical properties corresponding to various polishing purposes for various polishing objects through the subdivided structural design in a thickness direction, and of securing environmental friendliness by applying a recycled or recyclable material to at least some components, in relation to disposal after use, unlike the conventional polishing pad. Specifically, it includes a polishing layer, wherein the polishing layer includes a polishing variable layer having a polishing surface; and a polishing constant layer disposed on a rear surface side of the polishing variable layer opposite to the polishing surface.
The present disclosure is to provide a polishing pad which is capable of providing physical properties corresponding to various polishing purposes for various polishing objects through the subdivided structural design in a thickness direction, and of securing environmental friendliness by applying a recycled or recyclable material to at least some components, in relation to disposal after use, unlike the conventional polishing pad. Specifically, the polishing pad includes a polishing layer, wherein the polishing layer includes a polishing variable layer having a polishing surface; and a polishing constant layer disposed on a rear surface side of the polishing variable layer opposite to the polishing surface, and wherein the polishing constant layer includes a cured product of a composition having thermosetting polyurethane particles and a binder.
The present disclosure relates to a method for refreshing a polishing pad, and, through increasing a useful life of a polishing pad used in a polishing process, is capable of reducing the amount of discarded polishing pad, and significantly enhancing polishing efficiency by shortening the time required to replace the polishing pad. In addition, a method for manufacturing a semiconductor device is a manufacturing process using the method for refreshing a polishing pad, wherein a polishing pad having the period of usage ended is reusable by having polishing performance equivalent to a new polishing pad, and process efficiency may be enhanced by reducing the number of replacements of polishing pads.
Provided are a polishing pad provided with a structural feature capable of maximizing the leakage prevention effect, the polishing pad including: a polishing layer including a first surface which is a polished surface and a second surface which is an opposite surface thereof, and including a first through hole passing through the first surface and the second surface; a window disposed in the first through hole; and a support layer disposed at the second surface of the polishing layer.
The present disclosure is intended to provide, as a polishing pad to which a window for an endpoint detection is applied, and in which the window is capable of providing improved polishing performance in terms of preventing defects, etc., by a specific structure due to the window, rather than negatively affecting polishing performance as a local heterogeneous component on the polishing pad, a polishing pad including: a polishing layer including a first surface that is a polishing surface and a second surface that is a rear surface thereof, and containing a first through-hole penetrating from the first surface to the second surface; a window disposed in the first through-hole; and a void between a side surface of the first through-hole and a side surface of the window, and a method for manufacturing a semiconductor device by applying the same.
Provided are a polishing device including: a surface plate; a polishing pad mounted on the surface plate; a carrier for accommodating a polishing object; and a slurry supply unit including at least one nozzle, wherein the carrier performs a vibrating motion in a trajectory from the center of the surface plate to the end of the surface plate, and the slurry supply unit performs a vibrating motion at the same trajectory and speed as those of the vibrating motion of the carrier, as a polishing device which includes a slurry supply unit enabling subdivided driving in the supply of a polishing slurry, and in which the driving of the slurry supply unit has an advantage enabling optimized driving in an organic relationship between rotation and/or vibrating motion of the carrier and the surface plate and vertical pressurization conditions, etc. for the polishing surface of the carrier.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B24B 57/02 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
B24B 37/005 - Control means for lapping machines or devices
24.
POLISHING PAD AND METHOD FOR PREPARING A SEMICONDUCTOR DEVICE USING THE SAME
The present invention relates to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, to a process for preparing the same, and to a process for preparing a semiconductor device using the same. The polishing pad according to an embodiment can achieve low hardness by comprising a polishing layer formed using a curing agent of specific components. It is possible to enhance the mechanical properties of the polishing pad, as well as to improve the surface defects appearing on the surface of a semiconductor substrate, by controlling the surface roughness reduction rate and the recovery elasticity index of the polishing pad to specific ranges. It is also possible to further enhance the polishing rate.
The present disclosure relates to an apparatus for mixing a resin composition for manufacturing a polishing pad including: a raw material mixer preparing a mixed raw material including a prepolymer and a foaming agent; a filter connected to the raw material mixer for filtering the mixed raw material; and a pad composition mixer connected to the filter to prepare a curable mixture including the mixed raw material after being filtered and a curing agent, wherein the raw material mixer includes a plurality of rotators having different rotation speeds.
B01F 35/00 - Accessories for mixersAuxiliary operations or auxiliary devicesParts or details of general application
B29B 7/18 - MixingKneading non-continuous, with mechanical mixing or kneading devices, i.e. batch type with movable mixing or kneading devices rotary with more than one shaft
B29B 7/24 - Component parts, details or accessoriesAuxiliary operations for feeding
B29B 7/74 - MixingKneading using other mixers or combinations of dissimilar mixers
B01F 27/1142 - Helically shaped stirrers, i.e. stirrers comprising a helically shaped band or helically shaped band sections of the corkscrew type
B01F 27/1123 - Stirrers characterised by the configuration of the stirrers with arms, paddles, vanes or blades sickle-shaped, i.e. curved in at least one direction
26.
ADHESIVE FILM FOR POLISHING PAD, LAMINATED POLISHING PAD INCLUDING THE SAME AND METHOD OF POLISHING WAFER
An adhesive film for a polishing pad including a plurality of through holes extended from a top surface to a bottom surface of the adhesive film, wherein a volume fraction of the plurality of through holes is 3% to 20% based on a total volume of the adhesive film, is disclosed.
C09J 167/03 - Polyesters derived from dicarboxylic acids and dihydroxy compounds the dicarboxylic acids and dihydroxy compounds having the hydroxy and the carboxyl groups directly linked to aromatic rings
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C09J 5/06 - Adhesive processes in generalAdhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
The present disclosure relates to a polishing system in which accuracy and easiness of attachment and detachment of a polishing pad to a surface plate are maximized, the polishing system including: a surface plate having a polishing pad mounted on an upper portion; and the polishing pad mounted on the surface plate, in which the polishing pad includes: a polishing surface and a surface plate attachment surface that is a rear surface of the polishing surface, the surface plate attachment surface includes: at least one engraved portion, the surface plate includes at least one embossed portion, and the embossed portion and the engraved portion have a complementary coupling structure, and a method of manufacturing a semiconductor device to which the polishing system is applied.
B24B 37/10 - Lapping machines or devicesAccessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
28.
POLISHING PAD, MANUFACTURING METHOD THEREOF, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
The present disclosure relates to a polishing pad, a method for manufacturing the polishing pad, and a method for manufacturing a semiconductor device using the polishing pad, and the present disclosure can prevent an error in detecting the end point due to the window in the polishing pad by minimizing the effect on transmittance according to the surface roughness of the window in the polishing pad in the polishing process, and allows the fluidity and loading rate of the polishing slurry in the polishing process to be implemented at similar levels by maintaining the surface roughness difference between the polishing layer and the window in the polishing pad within the predetermined range, thereby enabling the problem of deterioration of polishing performance due to the surface difference between the polishing layer and the window to be prevented.
The present disclosure relates to a polishing pad, a method for manufacturing the polishing pad, and a method for manufacturing a semiconductor device using the polishing pad, and the present disclosure can prevent an error in detecting the end point due to the window in the polishing pad by minimizing the effect on transmittance according to the surface roughness of the window in the polishing pad in the polishing process, and allows the fluidity and loading rate of the polishing slurry in the polishing process to be implemented at similar levels by maintaining the surface roughness difference between the polishing layer and the window in the polishing pad within the predetermined range, thereby enabling the problem of deterioration of polishing performance due to the surface difference between the polishing layer and the window to be prevented.
Further, a method for manufacturing a semiconductor device to which a polishing pad is applied may be provided.
B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
B24B 37/20 - Lapping pads for working plane surfaces
B24B 37/10 - Lapping machines or devicesAccessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
29.
POLISHING PAD, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
A polishing pad includes a polishing layer, wherein the polishing layer includes zinc (Zn), and a concentration of the zinc (Zn) is 0.5 ppm to 40 ppm parts by weight based on the total weight of the polishing layer. In an exemplary embodiment, a polishing pad is provided wherein a concentration of the zinc (Zn) is 0.5 ppm to 40 ppm parts by weight based on the total weight of the polishing layer, a concentration of the iron (Fe) is 1 ppm to 50 ppm parts by weight based on the total weight of the polishing layer, and a concentration of the aluminum (Al) is 2 ppm to 50 ppm parts by weight based on the total weight of the polishing layer.
The present invention relates to a polishing pad, a method for producing the same, and a method of fabricating a semiconductor device using the same. According to the present invention, it is possible to prevent defects from occurring due to an inorganic component contained in a polishing layer during a polishing process, by limiting the content range of the inorganic component contained in the polishing layer. In addition, an unexpanded solid foaming agent is contained in a polishing composition for producing a polishing layer and is expanded during a curing process to form a plurality of uniform pores in the polishing layer, and the content range of the inorganic component contained in the polishing layer, thereby preventing defects from occurring during the polishing process.
The present disclosure relates to a polishing pad, a method for manufacturing the polishing pad, and a method for manufacturing a semiconductor device using the polishing pad. The polishing pad increases the area in direct contact with the semiconductor substrate during the polishing process and can prevent defects occurring on the surface of the semiconductor substrate by forming a plurality of uniform pores in the polishing layer, thereby adjusting the surface roughness characteristics of the polishing surface of the polishing layer. Further, the present disclosure may provide a method for manufacturing a semiconductor device to which the polishing pad is applied.
A polishing pad sheet which provides optimized interfacial properties for the laminated structure of a polishing pad based on appropriate elasticity and high durability, and in which the polishing pad having the polishing pad sheet applied thereto not only has its intrinsic function such as the polishing rate or the like, but also is capable of realizing the function without damage even during the polishing process in a wet environment for a long time, and a polishing pad to which the polishing pad sheet is applied. The polishing pad sheet includes: a first surface which is a polishing layer attachment surface; and a second surface which is a rear surface of the first surface, wherein the first surface has a value of the following Equation 1 of 4.20 to 5.50:4.20≤(|Sv|)/Sz×P (%)≤5.50.
Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.
The present disclosure provides a polishing pad, which may maintain polishing performances required for a polishing process, such as a removal rate and a polishing profile, minimize defects that may occur on a wafer during the polishing process, and polish layers of different materials so as to have the same level of flatness even when the layers are polished at the same time, and a method for producing the polishing pad. In addition, according to the present disclosure, it is possible to determine a polishing pad, which shows an optimal removal rate selectivity along with excellent performance in a CMP process, through the physical property values of the polishing pad without a direct polishing test.
Provided is a polishing pad including a polishing layer, wherein the nuclear magnetic resonance (NMR) 13C spectrum of a processed composition prepared by adding 1 g of the polishing layer to a 0.3 M aqueous solution of potassium hydroxide (KOH) and allowing the mixture to react in a closed container at a temperature of 150° C. for 48 hours includes a first peak appearing at 15 ppm to 18 ppm, a second peak appearing at 9 ppm to 11 ppm, and a third peak appearing at 138 ppm to 143 ppm, and the area ratio of the third peak to the second peak is about 5:1 to about 10:1. The polishing pad may exhibit physical properties corresponding to the above-described peak characteristics, thereby achieving a removal rate and defect prevention performance within desired ranges in polishing of a polishing target.
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
The present disclosure relates to a polishing pad, a method of manufacturing the polishing pad, and a method of manufacturing a semiconductor device using the same. In the polishing pad, an unexpanded solid-phase blowing agent is included in a polishing composition when a polishing layer is manufactured, and the unexpanded solid-phase blowing agent is expanded during a curing process to form a plurality of uniform pores in the polishing layer, such that defects occurring on a surface of the semiconductor substrate may be prevented. In addition, the present disclosure may provide a method of manufacturing a semiconductor device to which the polishing pad is applied.
B24B 29/00 - Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
C08J 9/32 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof from compositions containing microballoons, e.g. syntactic foams
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
37.
Polishing pad and method of fabricating semiconductor device using the same
13C spectrum of a processed composition prepared by adding 1 g of the polishing layer to a 0.3 M aqueous solution of potassium hydroxide (KOH) and allowing the mixture to react in a closed container at a temperature of 150° C. for 48 hours includes a first peak appearing at 15 ppm to 18 ppm, a second peak appearing at 9 ppm to 11 ppm, a third peak appearing at 138 ppm to 143 ppm, and a fourth peak appearing at 55 ppm to 65 ppm, and the softening control index calculated by Equation 1 is 0.10 to 0.45. The polishing pad includes the polishing layer having physical properties corresponding to the softening control index, and thus may exhibit a removal rate and defect prevention performance within desired ranges in polishing of a polishing target.
The present disclosure relates to an endpoint detection window of a polishing pad for use in a polishing process. The polishing pad may prevent an error in detection of the endpoint of the polishing process by preventing a difference in endpoint detection performance from occurring due to a difference in the wavelength of a laser between polishing apparatuses. The present disclosure may also provide a method of fabricating a semiconductor device using the polishing pad.
B24B 37/00 - Lapping machines or devicesAccessories
B24B 37/005 - Control means for lapping machines or devices
B24B 37/013 - Devices or means for detecting lapping completion
B24B 37/20 - Lapping pads for working plane surfaces
B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
B24B 49/12 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or workArrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/66 - Testing or measuring during manufacture or treatment
39.
Polishing pad and method for preparing semiconductor device using the same
The present invention provides a polishing pad, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad, the surface zeta potential and its ratio of the polishing surface are controlled to specific ranges according to the type of polishing slurry, whereby it is possible to improve the characteristics of scratches and surface defects appearing on the surface of the semiconductor substrate and to further enhance the polishing rate.
The embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, to a process for preparing the same, and to a process for preparing a semiconductor device using the same. The polishing pad according to the embodiment adjusts the surface roughness characteristics of the polishing pad after polishing, whereby the polishing rate can be enhanced, and the surface residues, surface scratches, and chatter marks of the wafer can be remarkably reduced.
The embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, to a process for preparing the same, and to a process for preparing a semiconductor device using the same. The polishing pad according to the embodiment adjusts the surface roughness characteristics of the polishing pad after polishing, whereby the polishing rate can be enhanced, and the surface residues, surface scratches, and chatter marks of the wafer can be remarkably reduced.
Disclosed is a method for producing a polishing pad, the method comprising the steps of: providing a polishing layer; forming a first through-hole penetrating the polishing layer; providing a support layer facing the polishing layer; interposing an adhesive layer between the polishing layer, which has the first through-hole, and support layer, and adhering the polishing layer and support layer to each other by means of the adhesive layer; forming, with the first through-hole as a reference point, a third through-hole penetrating the adhesive layer on a set area thereof, and a second through-hole penetrating the support layer on a set area thereof; and inserting a window inside the first through-hole.
An embodiment relates to a polishing pad which is used in a chemical mechanical planarization (CMP) process and has excellent airtightness, wherein the polishing pad is excellent in airtightness of a window opening and thus can prevent water leakage that may occur during a CMP process.
Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductor devices. The polishing pad may secure excellent polishing rate and within-wafer non-uniformity by controlling the physical properties such as initial load resistivity and compressive elasticity of the cushion layer and/or the laminate as defined by Equations 1 and 2:
]
Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization and a process for preparing the same. It is possible to control the size and distribution of pores in the porous polyurethane polishing pad by using thermally expanded microcapsules and an inert gas as a gas phase foaming agent, whereby the polishing performance thereof can be adjusted.
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
C08J 9/12 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent
C08J 9/32 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof from compositions containing microballoons, e.g. syntactic foams
46.
POLISHING PAD, PREPARATION METHOD THEREOF, AND PREPARATION METHOD OF SEMICONDUCTOR DEVICE USING SAME
Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. According to the embodiments, it is possible to provide a polishing pad in which the average diameter of the plurality of pores contained in the polishing pad, the sphericity of the plurality of pores, and the volume ratio thereof are adjusted, thereby enhancing the polishing speed and reducing surface such defects as scratches and chatter marks appearing on the surface of a semiconductor substrate.
A classifying and purifying apparatus of a solid blowing agent includes a classifier which classifies a supplied solid blowing agent into first microspheres and second microspheres, a storage connected to the classifier, in which the classified first microspheres flow in to be stored and emitted, and a filter arranged on the moving route of the solid blowing agent or the first microspheres which separates metallic substance from the object of filtering comprising the solid blowing agent or the first microspheres.
B07B 9/00 - Combinations of apparatus for screening or sifting or for separating solids from solids using gas currentsGeneral arrangement of plant, e.g. flow sheets
B03C 1/30 - Combinations with other devices, not otherwise provided for
B07B 4/02 - Separating solids from solids by subjecting their mixture to gas currents while the mixtures fall
C08J 9/22 - After-treatment of expandable particlesForming foamed products
48.
POLISHING PAD, PREPARATION METHOD THEREOF, AND PREPARATION METHOD OF SEMICONDUCTOR DEVICE USING SAME
Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiments, the number average diameter (Da) and number median diameter (Dm) of a plurality of pores are adjusted to achieve a specific range of the Ed value (Equation 1). As a result, an excellent polishing rate and within-wafer non-uniformity can be achieved.
The polishing pad according to an embodiment comprises a multifunctional low-molecular-weight compound as one of the polymerization units of the polyurethane-based resin that constitutes the polishing layer, thereby reducing the unreacted diisocyanate monomer in the production process to enhance the processability and quality and to increase the crosslinking density. Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.
The polishing pad according to an embodiment adjusts the content of elements present in the polishing layer, thereby controlling the bonding strength between the polishing pad and the polishing particles and enhancing the bonding strength between the polishing particles and the semiconductor substrate (or wafer), resulting in an increase in the polishing rate. It is possible to enhance not only the mechanical properties of the polishing pad such as hardness, tensile strength, elongation, and modulus, but also the polishing rate for both a tungsten layer or an oxide layer. Accordingly, it is possible to efficiently fabricate a semiconductor device of excellent quality using the polishing pad.
Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.
The composition according to an embodiment employs a mixture of curing agents, which comprises a first curing agent containing sulfur and a second curing agent containing an ester group, whereby it is possible to control the physical properties of the polishing pad as necessary.
A polishing pad includes a polyurethane, wherein the polyurethane includes in its main chain a silane repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is about 40 or less
A polishing pad includes a polyurethane, wherein the polyurethane includes in its main chain a silane repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is about 40 or less
A polishing pad includes a polyurethane, wherein the polyurethane includes in its main chain a silane repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is about 40 or less
wherein R11 and R12 are each independently hydrogen or C1-C10 alkyl groups, and n is an integer from 1 to 30.
A polishing pad includes a polyurethane, wherein the polyurethane includes a fluorinated repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is 40 or less;
14 is fluorine, and n and m are each independently an integer from 0 to 20, with the proviso that n and m are not simultaneously 0.
In the composition according to an embodiment, the weight ratio of toluene 2,4-diisocyanate in which one NCO group is reacted and unreacted toluene 2,6-diisocyanate in the urethane-based prepolymer is adjusted, whereby such physical properties as gelation time can be controlled. Thus, the polishing rate and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled while it has a hardness suitable for a soft pad, whereby it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.
The present invention provides a polishing pad whose crosslinking density is adjusted to enhance the performance of the CMP process such as polishing rate and cut pad rate. In addition, in the process for preparing a polishing pad according to the embodiment, it is possible to implement such a crosslinking density by a simple method of controlling the preheating temperature of the mold for curing. Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24D 11/00 - Constructional features of flexible abrasive materialsSpecial features in the manufacture of such materials
C08J 9/12 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
57.
Polishing pad that minimizes occurrence of defects and process for preparing the same
The present invention relates to a polishing pad that minimizes the occurrence of defects and a process for preparing the same, Since the polishing pad comprises fine hollow particles having shells, the glass transition temperature (Tg) of which is adjusted, the hardness of the shells and the shape of micropores on the surface of a polishing layer are controlled. Since the content of Si in the polishing layer is adjusted, it is possible to prevent the surface damage of a semiconductor substrate caused by hard additives. As a result, the polishing pad can provide a high polishing rate while minimizing the occurrence of defects such as scratches on the surface of a semiconductor substrate during the CMP process.
B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24D 3/00 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special natureAbrasive bodies or sheets characterised by their constituents
B24D 11/00 - Constructional features of flexible abrasive materialsSpecial features in the manufacture of such materials
In the composition according to the embodiment, the content of an unreacted diisocyanate monomer in a urethane-based prepolymer may be controlled to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.
In the composition according to the embodiment, the composition of oligomers that constitute the chains in a urethane-based prepolymer may be adjusted to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
C08G 18/10 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
C08G 18/12 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step using two or more compounds having active hydrogen in the first polymerisation step
C08G 18/72 - Polyisocyanates or polyisothiocyanates
C08G 18/75 - Polyisocyanates or polyisothiocyanates cyclic cycloaliphatic
C08G 18/76 - Polyisocyanates or polyisothiocyanates cyclic aromatic
C08J 9/00 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof
C08J 9/12 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent
C08J 9/14 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent organic
C08J 9/32 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof from compositions containing microballoons, e.g. syntactic foams
Embodiments relate to a polishing pad, which comprises a window having a hardness similar to that of its polishing layer. Since the polishing pad comprises a window having a hardness and a polishing rate similar to those of its polishing layer, it can produce an effect of preventing scratches on a wafer during a CMP process. In addition, the polishing layer and the window of the polishing pad have a similar rate of change in hardness with respect to temperature, so that they can maintain a similar hardness despite a change in temperature during the CMP process.
B24B 37/20 - Lapping pads for working plane surfaces
B24B 37/00 - Lapping machines or devicesAccessories
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24D 3/00 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special natureAbrasive bodies or sheets characterised by their constituents
Provided is a polishing pad that comprises a plurality of first grooves that have a shape of geometric figures that share a center; and a plurality of second grooves that radially extend from the center to the outer perimeter, wherein the depth of the second grooves is equal to, or deeper than, the depth of the first grooves. It is possible for the polishing pad to rapidly discharge any debris generated during the polishing process to reduce such defects as scratches on the surface of a wafer.
An embodiment relates to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. In the porous polyurethane polishing pad, the polishing performance (or polishing rate) thereof can be controlled by adjusting the size and distribution of pores in the polishing pad.
Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polyurethane polishing pad can be adjusted. Thus, it is possible to provide a porous polyurethane polishing pad that has enhanced physical properties such as a proper level of withstand voltage, excellent polishing performance (i.e., polishing rate), and the like.
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
B29C 39/00 - Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressureApparatus therefor
B29C 39/02 - Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressureApparatus therefor for making articles of definite length, i.e. discrete articles
C08J 9/00 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof
C08J 9/04 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof using blowing gases generated by a previously added blowing agent
C08J 9/12 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent
C08J 9/236 - Forming foamed products using binding agents
C08J 9/32 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof from compositions containing microballoons, e.g. syntactic foams
Embodiments relate to a porous polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polishing pad can be adjusted in light of the volume thereof. Thus, the plurality of pores have an apparent volume-weighted average pore diameter in a specific range, thereby providing a porous polishing pad that is excellent in such physical properties as polishing rate and the like.
B24D 3/34 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special natureAbrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
B24D 11/00 - Constructional features of flexible abrasive materialsSpecial features in the manufacture of such materials
C08J 9/32 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof from compositions containing microballoons, e.g. syntactic foams
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
65.
Leakage-proof polishing pad and process for preparing the same
Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for producing the same. In the porous polyurethane polishing pad, it is possible to control the size and distribution of pores, whereby the polishing performance (i.e., polishing rate) of the polishing pad can be adjusted, by way of employing thermally expanded microcapsules as a solid phase foaming agent and an inert gas as a gas phase foaming agent.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C08G 18/76 - Polyisocyanates or polyisothiocyanates cyclic aromatic
C08G 18/18 - Catalysts containing secondary or tertiary amines or salts thereof
C08G 18/62 - Polymers of compounds having carbon-to-carbon double bonds
C08J 9/12 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent
C08J 9/00 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof
C08G 18/75 - Polyisocyanates or polyisothiocyanates cyclic cycloaliphatic
C08G 18/24 - Catalysts containing metal compounds of tin
C08G 18/42 - Polycondensates having carboxylic or carbonic ester groups in the main chain
C08G 18/73 - Polyisocyanates or polyisothiocyanates acyclic
C08J 9/32 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof from compositions containing microballoons, e.g. syntactic foams
2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 101 to 250 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 μm.
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
C08G 18/10 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
C08J 9/32 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof from compositions containing microballoons, e.g. syntactic foams
B24D 3/32 - Resins for porous or cellular structure
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
B24B 37/20 - Lapping pads for working plane surfaces
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
68.
Porous polyurethane polishing pad and process for preparing a semiconductor device by using the same
2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 30 to 100 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 μm.
patents