43 - Food and drink services, temporary accommodation
Goods & Services
Retirement home services; Continuing care retirement communities (CCRCs) in the nature of assisted living and independent living facilities; Respite care services in the nature of providing temporary housing for dependent elderly or disabled people to provide relief for their permanent caregivers; Providing day-care centers for the elderly
43 - Food and drink services, temporary accommodation
Goods & Services
Retirement home services; Continuing care retirement communities (CCRCs) in the nature of assisted living and independent living facilities; Respite care services in the nature of providing temporary housing for dependent elderly or disabled people to provide relief for their permanent caregivers; Providing day-care centers for the elderly
43 - Food and drink services, temporary accommodation
Goods & Services
(1) Continuing care retirement communities (CCRCs) in the nature of assisted living and independent living facilities; housing services for seniors; retirement home services; retirement homes
43 - Food and drink services, temporary accommodation
Goods & Services
(1) Continuing care retirement communities (CCRCs) in the nature of assisted living and independent living facilities; housing services for seniors; retirement home services; retirement homes
43 - Food and drink services, temporary accommodation
Goods & Services
(1) Continuing care retirement communities (CCRCs) in the nature of assisted living and independent living facilities; housing services for seniors; retirement home services; retirement homes
43 - Food and drink services, temporary accommodation
Goods & Services
(1) Continuing care retirement communities (CCRCs) in the nature of assisted living and independent living facilities; housing services for seniors; retirement home services; retirement homes
43 - Food and drink services, temporary accommodation
Goods & Services
(1) Continuing care retirement communities (CCRCs) in the nature of assisted living and independent living facilities; housing services for seniors; retirement home services; retirement homes
43 - Food and drink services, temporary accommodation
Goods & Services
(1) Continuing care retirement communities (CCRCs) in the nature of assisted living and independent living facilities; housing services for seniors; retirement home services; retirement homes
12.
MEASURING LOCAL CRITICAL DIMENSION UNIFORMITY OF AN ARRAY OF TWO-DIMENSIONAL STRUCTURAL ELEMENTS
A method, a system, and a non-transitory computer readable medium for measuring a local critical dimension uniformity of an array of two-dimensional structural elements, the method may include obtaining an acquired optical spectrometry spectrum of the array; feeding the acquired optical spectrometry spectrum of the array to a trained machine learning process, wherein the trained machine learning process is trained to map an optical spectrometry spectrum to an average critical dimension (CD) and a local critical dimension uniformity (LCDU); and outputting, by the trained machine learning process, the average CD and the LCDU of the array.
An integrated metrology system for evaluating semiconductor wafers, the metrology system comprises a main body that has a rear side and a front side; the front side defines a front border of the main body; one or more detachable supporting units that are detachably coupled to the main body and support the main body while extending outside the front border; and at least one auxiliary supporting unit that is configured to support the main body at an absence of the one or more detachable supporting units
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G01N 23/04 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and forming images of the material
A61B 50/10 - Furniture specially adapted for surgical or diagnostic appliances or instruments
A method, a system, and a non-transitory computer readable medium for accurate Raman spectroscopy. The method may include executing at least one iteration of the steps of: (i) performing, by an optical measurement system, a calibration process that comprises (a) finding a misalignment between a region of interest defined by a spatial filter, and an impinging beam of radiation that is emitted from an illuminated area of a sample, the impinging beam impinges on the spatial filter; and (b) determining a compensating path of propagation of the impinging beam that compensates the misalignment; and (ii) performing a measurement process, while the optical measurement system is configured to provide the compensating path of propagation of the impinging beam, to provide one or more Raman spectra.
G01N 21/27 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
A system and methods for OCD metrology are provided including receiving reference parameters, receiving multiple sets of measured scatterometric data, and receiving an optical model designed to generate one or more sets of model scatterometric data according to a set of pattern parameters, and training a machine learning model by applying, during the training, target features including the reference parameters, and by applying input features including the sets of measured scatterometric data and the sets of model scatterometric data, such that the trained machine learning model estimates new wafer pattern parameters from subsequently sets of measured scatterometric data.
A system and methods for OCD metrology are provided including receiving multiple first sets of scatterometric data, dividing each set into k sub-vectors, and training, in a self-supervised manner, k2 auto-encoder neural networks that map each of the k sub-vectors to each other. Subsequently multiple respective sets of reference parameters and multiple corresponding second sets of scatterometric data are received and a transfer neural network (NN) is trained. Initial layers include a parallel arrangement of the k2 encoder neural networks. Target output of the transfer NN training is set to the multiple sets of reference parameters and feature input is set to the multiple corresponding second sets of scatterometric data, such that the transfer NN is trained to estimate new wafer pattern parameters from subsequently measured sets of scatterometric data.
A system and methods for OCD metrology are provided including receiving training data for training an OCD machine learning (ML) model, including multiple pairs of corresponding sets of scatterometric data and reference parameters. For each of the pairs, one or more corresponding outlier metrics are by calculated and corresponding outlier thresholds are applied whether a given pair is an outlier pair. The OCD ML model is then trained with the training data less the outlier pairs.
G01N 21/89 - Investigating the presence of flaws, defects or contamination in moving material, e.g. paper, textiles
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G06F 15/18 - in which a program is changed according to experience gained by the computer itself during a complete run; Learning machines (adaptive control systems G05B 13/00;artificial intelligence G06N)
A combined OCD and photoreflectance system and method for improving the OCD performance in measurements of optical properties of a target sample. The system comprises (a) either a single channel OCD set-up comprised of a single probe beam configured in a direction normal/oblique to the target sample or a multi-channel OCD set-up having multiple probe beams configured in normal and oblique directions to the target sample for measuring the optical properties of the target sample, (b) at least one laser source for producing at least one laser beam, (c) at least one modulation device to turn the at least one laser beam into at least one alternatingly modulated laser beam, and (d) at least one spectrometer for measuring spectral components of the at least one light beam reflecting off said target sample; wherein the at least one alternatingly modulated laser beam is alternatingly modulating the spectral reflectivity of the target sample,
Photoreflectance (PR) spectroscopy system and method for accumulating separately a "pump on" light beam and a "pump off light beam reflecting off a sample. The system comprises: (a) a probe source for producing a probe beam, the probe beam is used for measuring spectral reflectivity of a sample, (b) a pump source for producing a pump beam, (c) at least one spectrometer, (d) a first modulation device to allow the pump beam to alternatingly modulate the spectral reflectivity of the sample, so that, a light beam reflecting from the sample is altematingly a "pump on" light beam and a "pump off light beam, (e) a second modulation device in a path of the light beam reflecting off the sample to alternatingly direct the "pump on" light beam and the "pump off light beam to the at least one spectrometer, and (f) a computer.
Optical metrology may be used to examine substrates prior to a fabrication operation in order to adjust processing parameters of the fabrication operation. A machine learning model may analyze the optical signals received by an optical metrology tool to propose a temperature distribution to be used in a subsequent fabrication operation. The temperature distribution may improve the uniformity of the wafer and/or achieve a desired target feature value.
Controlling semiconductor device manufacture by acquiring training scatterometric signatures collected at training locations on training semiconductor wafers and corresponding to locations within a predefined design of a training semiconductor device, the training signatures collected after predefined processing steps during manufacture of the device on the training wafers, acquiring manufacturing outcome data associated with the training locations, training a prediction model using the training signatures and the manufacturing outcome data, and applying the prediction model to a candidate scatterometric signature to predict a manufacturing outcome, the candidate signature collected at a candidate location on a candidate semiconductor wafer, the candidate location corresponding to a location within the same predefined design of a candidate semiconductor device, the candidate signature collected after any of the processing steps during manufacture of the candidate device on the candidate wafer.
A measurement system is presented configured for integration with a processing equipment for applying optical measurements to a structure. The measurement system comprises: a support assembly for holding a structure under measurements in a measurement plane, configured and operable for rotation in a plane parallel to the measurement plane and for movement along a first lateral axis in said measurement plane; an optical system defining illumination and collection light channels of normal and oblique optical schemes and comprising an optical head comprising at least three lens units located in the illumination and collection channels; a holder assembly comprising: a support unit for carrying the optical head, and a guiding unit for guiding a sliding movement of the support unit along a path extending along a second lateral axis perpendicular to said first lateral axis; and an optical window arrangement comprising at least three optical windows made in a faceplate located between the optical head at a certain distance from the measurement plane. The optical windows are aligned with the illumination and collection channels for, respectively, propagation of illuminating light from the optical head and propagation of light returned from an illuminated region to the optical head, in accordance with the normal and oblique optical schemes.
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G01N 23/04 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and forming images of the material
Semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting an earlier-in-time portion of the time-domain representation that excludes a later-in-time portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the earlier-in-time portion of the time-domain representation.
A polarized Raman Spectrometric system for defining parameters of a polycrystalline material, the system comprises a polarized Raman Spectrometric apparatus, a computer-controlled sample stage for positioning a sample at different locations, and a computer comprising a processor and an associated memory. The polarized Raman Spectrometric apparatus generates signal(s) from either small sized spots at multiple locations on a sample or from an elongated line- shaped points on the sample, and the processor analyzes the signal(s) to define the parameters of said polycrystalline material.
A method for use in optical measurements on patterned structures, the method including performing a number of optical measurements on a structure with a measurement spot configured to provide detection of light reflected from an illuminating spot at least partially covering at least two different regions of the structure, the measurements including detecting light reflected from the at least part of the at least two different regions within the measurement spot, the detected light including interference of at least two complex electric fields reflected from the at least part of the at least two different regions, and being therefore indicative of a phase response of the structure, carrying information about properties of the structure.
A semiconductor metrology system including a spectrum acquisition tool for collecting, using a first measurement protocol, baseline scatterometric spectra on first semiconductor wafer targets, and for various sources of spectral variability, variability sets of scatterometric spectra on second semiconductor wafer targets, the variability sets embodying the spectral variability, a reference metrology tool for collecting, using a second measurement protocol, parameter values of the first semiconductor wafer targets, and a training unit for training, using the collected spectra and values, a prediction model using machine learning and minimizing an associated loss function incorporating spectral variability terms, the prediction model for predicting values for production semiconductor wafer targets based on their spectra.
Advertising, marketing and promotional services related to the senior care industry for the purpose of facilitating networking and socializing opportunities for business purposes
Advertising, marketing and promotional services related to the senior care industry for the purpose of facilitating networking and socializing opportunities for business purposes
Advertising, marketing and promotional services related to the senior care industry for the purpose of facilitating networking and socializing opportunities for business purposes
A control system for use in measuring one or more parameters of a patterned structure. The control system is configured as a computer system and comprises: an input utility configured to receive input data comprising raw measured TEM image data, TEMmeas, data indicative of a TEM measurement mode; and a data processor configured to process the raw measured TEM image data, TEMmeas, and generate output data indicative of one or more parameters of a patterned structure. The data processor comprises an optimization module configured and operable to utilize the data indicative of the TEM measurement mode and perform a fitting procedure between the raw measured TEM image data, TEMmeas, and predetermined simulated TEM image data, TEMsimul, and determine one or more parameters of the structure from the simulated image data corresponding to a best fit condition. The predetermined simulated TEM image data, TEMsimul, is based on a parametrized three-dimensional model of features of the patterned structure, and comprises one or more simulated TEM images and a simulated weight map comprising weights assigned to different regions in the simulated TEM image corresponding to different features of the patterned structure.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01J 37/26 - Electron or ion microscopesElectron- or ion-diffraction tubes
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
G01N 21/84 - Systems specially adapted for particular applications
A method and system are presented for use in X-ray based measurements on patterned structures. The method comprises: processing data indicative of measured signals corresponding to detected radiation response of a patterned structure to incident X-ray radiation, and subtracting from said data an effective measured signals substantially free of background noise, said effective measured signals being formed of radiation components of reflected diffraction orders such that model based interpretation of the effective measured signals enables determination of one or more parameters of the patterned structure, wherein said processing comprises: analyzing the measured signals and extracting therefrom a background signal corresponding to the background noise; and applying a filtering procedure to the measured signals to subtract therefrom signal corresponding to the background signal, resulting in the effective measured signal.
G01N 23/201 - Measuring small-angle scattering, e.g. small angle X-ray scattering [SAXS]
G01N 23/20 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using diffraction of the radiation by the materials, e.g. for investigating crystal structureInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materialsInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using reflection of the radiation by the materials
G01N 23/207 - Diffractometry, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
32.
Raman spectroscopy based measurements in patterned structures
A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the characteristic(s) to be measured; processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme; analyzing the distribution of Raman-contribution efficiency and determining the characteristic(s) of the structure.
H01L 21/66 - Testing or measuring during manufacture or treatment
G01L 1/24 - Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis
A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: performing measurements on a patterned structure by illuminating the structure with exciting light to cause Raman scattering of one or more excited regions of the pattern structure, while applying a controlled change of at least temperature condition of the patterned structure, and detecting the Raman scattering, and generating corresponding measured data indicative of a temperature dependence of the detected Raman scattering; and analyzing the measured data and generating data indicative of spatial profile of one or more properties of the patterned structure.
A control system is presented for use in measuring one or more parameters of a three-dimensional patterned structure. The control system is configured as a computer system comprising a data processor configured to receive and process raw measured TEM image data, TEMmeas, and generate output data indicative of one or more parameters of a patterned structure. The data processor comprises an optimization module configured and operable to utilize data indicative of one or more parameters of TEM measurement mode and perform a fitting procedure between the raw measured TEM image data, TEMmeas, and a predetermined simulated TEM image data, TEMsimui based on a parametrized three- dimensional model of features of the patterned structure, and generate simulated image data corresponding to a best fit condition, to thereby enable determination therefrom of the one or more parameters of the structure.
H01L 21/66 - Testing or measuring during manufacture or treatment
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
H01J 37/26 - Electron or ion microscopesElectron- or ion-diffraction tubes
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
35.
AN APPARATUS AND METHOD FOR ELECTRICAL TEST PREDICTION
A test site and method are herein disclosed for predicting E-test structure (in-die structure) and/or device performance. The test site comprises an E-test structure and OCD-compatible multiple structures in the vicinity of the E-test structure to allow optical scatterometry (OCD) measurements. The OCD-compatible multiple structures are modified by at least one modification technique selected from (a) multiplication type modification technique, (b) dummification type modification technique, (c) special Target design type modification technique, and (d) at least one combination of (a), (b) and (c) for having a performance equivalent to the performance of the E-test structure.
A method and system are presented for use in controlling a multiple patterning process of n patterning stages subsequently applied to a sample to produce a target pattern thereon. The method comprises: providing intermediate measured data indicative of an optical response of the sample after being patterned by m-th patterning stage, 1≤m
An optical system and method are presented for use in measurements on an upper surface of a layered sample when located in a measurement plane. The optical system is configured as a normal-incidence system having an illumination channel and a collection channel, and comprises an objective lens unit and a light propagation affecting device. The objective lens unit is accommodated in the illumination and collection channels, thereby defining a common optical path for propagation of illuminating light from the illumination channel toward an illuminating region in the measurement plane and for propagation of light returned from measurement plane to the collection channel. The light propagation affecting device comprises an apertured structure located in at least one of the illumination and collection channels, and configured to provide angular obscuration of light propagation path for blocking angular segments associated with light propagation from regions outside the illuminated region.
Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered structure, identifying in the spectral derivative a discontinuity that indicates that an edge of a void formed by the etch process at the region of interest has crossed a layer boundary of the multi-layered structure, determining that the crossed layer boundary corresponds to a preselected layer boundary of the multi-layered structure, and applying a predefined control action to the etch process responsive to determining that the crossed layer boundary corresponds to the preselected layer boundary of the multi -layered structure.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
09 - Scientific and electric apparatus and instruments
Goods & Services
(1) Wireless wearable technology call system in pendant form or in wristband form comprising motion sensors, GPS receivers, GPS transmitters; contactless pendant or wristband readable by a contactless door lock reader in pendant form or in wristband form comprising motion sensors, GPS receivers, GPS transmitters; electronic key for residence door; entry access controller that allows requests for emergency or non-emergency assistance with the press of a button; fall detection monitor in pendant form or in wristband form; security system, namely a motion sensor and a wireless wearable technology in pendant form or in wristband form to detect the presence of a person and to identify the person
40.
OPTICAL SYSTEM AND METHOD FOR MEASUREMENTS OF SAMPLES
A measurement system is presented for use in metrology measurements on patterned samples. The system comprises: at least one light source device configured to generate broadband light, at least one detection device configured to provide spectral information of detected light, and an optical system. The optical system comprises at least an oblique channel system for directing incident light generated by the light source(s) along an oblique illumination channel onto a measurement plane, on which a sample is to be located, and directing broadband light specularly reflected from the sample along a collection channel to the detection device(s). The optical system further comprises an interferometric unit comprising a beam splitting/combining device and a reference reflector device. The beam splitting/combining device is accommodated in the illumination and collection channels and divides light propagating in the illumination channel into sample and reference light beams propagating in sample and reference paths, and combines reflected reference and sample paths into the collection channel to thereby create a spectral interference pattern on a detection plane.
36 - Financial, insurance and real estate services
43 - Food and drink services, temporary accommodation
44 - Medical, veterinary, hygienic and cosmetic services; agriculture, horticulture and forestry services
Goods & Services
(1) Investing in nursing homes, physical rehabilitation centers, and hospices
(2) Operating independent living residences for seniors and retirement living residences
(3) Providing nursing care in homes, independent living residences and retirement living residences; operating nursing homes, physical rehabilitation centers, and hospices
43 - Food and drink services, temporary accommodation
Goods & Services
Retirement home services; providing independent living residences, and assisted living facilities, namely, respite care and elder care day care services; providing assisted living facilities; providing elder care; home care and adult care in the nature of meal preparation
43.
METHOD AND SYSTEM FOR PROCESSING PATTERNED STRUCTURES
A system and method are presented for controlling a process applied to a structure comprising at least one of material removal and material deposition processes. The system comprises: a heating radiation source configured and operable to generate a temperature field profile across a processing area of the structure; and a control unit configured and operable to control operation of said heating radiation source in accordance with a predetermined pattern map within the processing area, so as to create a corresponding pattern selective profile of said temperature field across said processing area providing desired pattern selective distribution of at least one parameter characterizing the process applied to the processing area of the structure.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
44.
RAMAN SPECTROSCOPY BASED MEASUREMENTS IN PATTERNED STRUCTURES
A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the characteristic(s) to be measured; processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme; analyzing the distribution of Raman- contribution efficiency and determining the characteristic(s) of the structure.
G01N 21/66 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.
43 - Food and drink services, temporary accommodation
Goods & Services
Retirement homes; providing independent living, assisted living, and long term care facilities and services, namely, respite care and elder care day care services; providing assisted living facilities; providing elder care; food preparation services provided as a component of home care and adult care
47.
HYBRID MEASUREMENT SYSTEM AND METHOD FOR MEASURING IN THIN FILMS
A measurement method and system are presented for in-line measurements of one or more parameters of thin films in structures progressing on a production line. First measured data and second measured data are provided from multiple measurements sites on the thin film being measured, wherein the first measured data corresponds to first type measurements from a first selected set of a relatively small number of the measurement sites, and the second measured data corresponds to second type optical measurements from a second set of significantly higher number of the measurements sites. The first measured data is processed for determining at least one value of at least one parameter of the thin film in each of the measurement sites of said first set. Such at least one parameter value is utilized for interpreting the second measured data, thereby obtaining data indicative of distribution of values of said at least one parameter within said second set of measurement sites.
43 - Food and drink services, temporary accommodation
Goods & Services
Retirement homes; providing independent living, assisted living, and long term care facilities and services, namely, respite care and elder care day care services; providing assisted living facilities; providing elder care; food preparation services provided as a component of home care and adult care
49.
METHOD FOR USE IN PROCESS CONTROL OF MANUFACTURE OF PATTERNED SAMPLES
A method and system are presented for use in controlling a multiple patterning process of n patterning stages subsequently applied to a sample to produce a target pattern thereon. The method comprises: providing intermediate measured data indicative of an optical response of the sample after being patterned by m-th patterning stage, 1≤m
G01N 21/956 - Inspecting patterns on the surface of objects
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/14 - Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
H01L 21/66 - Testing or measuring during manufacture or treatment
50.
A METHOD OF MEASUREMENT AND CONTROL OF THE SURFACE POTENTIAL OF A SAMPLE
A method of measurement and control of the surface potential of a sample using measuring the distribution of kinetic energy of charged particles emitted from a surface of a sample. A shift in kinetic energy of the charged particles is determined and the surface potential of the surface of the sample is changed in response the shift in kinetic energy of the charged particles.
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
A test structure and method of its manufacture are presented for use in metrology measurements of a sample pattern. The test structure comprises a test pattern comprising a portion of the sample pattern including at least one selected feature and a blocking layer at least partially covering regions of the test structure adjacent to the at least one selected region
H01L 21/66 - Testing or measuring during manufacture or treatment
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
42 - Scientific, technological and industrial services, research and design
Goods & Services
(1) Business strategy and business development consultancy services both related to provision of services with seniors, and product development and product development consultancy services related to products for seniors.
54.
METHOD AND SYSTEM FOR OPTICAL METROLOGY IN PATTERNED STRUCTURES
A data analysis method and system are presented for use in determining one or more parameters of a patterned structure located on top of an underneath layered structure. According to this technique, input data is provided which includes first measured data PMD being a function f of spectral intensity Iλ and phase φ, PMD=f(Iλ;φ), corresponding to a complex spectral response of the underneath layered structure, and second measured data Smeas indicative of specular reflection spectral response of a sample formed by the patterned structure and the underneath layered structure. Also provided is a general function F describing a relation between a theoretical optical response Stheor of the sample and a modeled optical response Smodel of the patterned structure and the complex spectral response PMD of the underneath layered structure, such that Stheor=F(Smodel; PMD). The general function is then utilized for comparing the second measured data Smeas and the theoretical optical response Stheor, and determining parameter(s) of interest of the top structure.
A method and system are presented for use in model-based optical measurements in patterned structures. The method comprises: selecting an optimal optical model for interpretation of optical measured data indicative of optical response of the structure under measurements. The selection of the optimal optical model comprises: creating a complete optical model with floating parameters defining multiple configurations of said complete model including one or more model configurations describing an optical response of the structure under measurements, utilizing the complete model for predicting a reference optical response from the structure and generating corresponding virtual reference data, and using the virtual reference data for selecting the optimal optical model for interpretation of the optical measured data.
G06F 19/00 - Digital computing or data processing equipment or methods, specially adapted for specific applications (specially adapted for specific functions G06F 17/00;data processing systems or methods specially adapted for administrative, commercial, financial, managerial, supervisory or forecasting purposes G06Q;healthcare informatics G16H)
G01B 11/14 - Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
57.
METROLOGY TEST STRUCTURE DESIGN AND MEASUREMENT SCHEME FOR MEASURING IN PATTERNED STRUCTURES
A test structure is presented for use in metrology measurements of a sample pattern. The test structure comprises a main pattern, and one or more auxiliary patterns. The main pattern is formed by a plurality of main features extending along a first longitudinal axis and being spaced from one another along a second lateral axis. The one or more auxiliary patterns are formed by a plurality of auxiliary features associated with at least some of the main features such that a dimension of the auxiliary feature is in a predetermined relation with a dimension of the respective main feature. This provides that a change in a dimension of the auxiliary feature from a nominal value affects a change in non-zero order diffraction response from the test structure in a predetermined optical measurement scheme, and this change is indicative of a deviation in one or more parameters of the main pattern from nominal value thereof.
An inspection system and method are presented for inspecting structures having a pattern formed by an array of elongated grooves having high aspect-ratio geometry, such as semiconductor wafers formed with vias. The inspection system comprises an imaging system and a control unit. The imaging system is configured and operable for imaging the structure with a dark-field imaging scheme and generating a dark-field image. The control unit comprises an analyzer module for analyzing pixels brightness in the dark-field image for identifying a defective groove, being a groove characterized by pixels brightness in the dark-field image lower than nominal brightness by a predetermined factor.
36 - Financial, insurance and real estate services
39 - Transport, packaging, storage and travel services
41 - Education, entertainment, sporting and cultural services
44 - Medical, veterinary, hygienic and cosmetic services; agriculture, horticulture and forestry services
45 - Legal and security services; personal services for individuals.
Goods & Services
(1) Consulting and counselling services in the fields of financial investment, bereavement, accessing social assistance programs, senior's housing; senior and elder care, wellness and recreational services namely home health care services and nursing care; excluding the operation of a retail drug store, provision of pharmacy services, or provision of retail sales services and rental services of medical equipment or medical supplies; personal support worker services namely providing assistance in the selection of clothing, educational services in the field of food preparation and assisting with food preparation and feeding, preparation and dispensing of medications, providing information to patients in the field of physical therapy, and conducting mobility assessments and assisting with exercise; mobility assistance services, namely providing directions and escort services to and from dining locations and activity rooms; consulting services in the fields of general health care and physical rehabilitation; massage therapy services; social and recreational services for seniors namely, arranging travel tours, travel arrangement, excursion and cruise arrangement, and coordinating travel arrangements for individuals and for groups; social club services namely organization of dancing and scoial events and organization and arrangement of day trips and sightseeing tours; music therapy services for physical, psychological and cognitive purposes.
60.
FEED-FORWARD OF MULTI-LAYER AND MULTI-PROCESS INFORMATION USING XPS AND XRF TECHNOLOGIES
Methods and systems for feed- forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
61.
TEST STRUCTURE DESIGN FOR METROLOGY MEASUREMENTS IN PATTERNED SAMPLES
A test structure is presented for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis. The test structure comprises a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some features of the main pattern, parameters of which are to be controlled during metrology measurements.
Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.
G01D 21/02 - Measuring two or more variables by means not covered by a single other subclass
G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
A measurement system for use in measuring parameters of a patterned sample is presented. The system comprises: a broadband light source; an optical system configured as an interferometric system; a detection unit; and a control unit. The interferometric system defines illumination and detection channels having a sample arm and a reference arm comprising a reference reflector, and is configured for inducing an optical path difference between the sample and reference arms; the detection unit comprises a configured and operable for detecting a combined light beam formed by a light beam reflected from said reflector and a light beam propagating from a sample's support, and generating measured data indicative of spectral interference pattern formed by at least two spectral interference signatures. The control unit is configured and operable for receiving the measured data and applying a model-based processing to the spectral interference pattern for determining one or more parameters of the pattern in the sample.
An article is presented configured for controlling a multiple patterning process, such as a spacer self-aligned multiple patterning, to produce a target pattern. The article comprises a test site carrying a test structure comprising at least one pair of gratings, wherein first and second gratings of the pair are in the form of first and second patterns of alternating features and spaces and differ from the target pattern by respectively different first and second values which are selected to provide together a total difference such that a differential optical response from the test structure is indicative of a pitch walking effect.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
G01B 21/00 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
G01D 18/00 - Testing or calibrating apparatus or arrangements provided for in groups
A method for use in planning metrology measurements, the method comprising: providing inverse total measurement uncertainty (TMU) analysis equations for upper and lower confidence limits TMUUL and TMULL of the TMU being independent on prior knowledge of measurements by a tool under test (TuT) and a reference measurement system (RMS), thereby enabling estimation of input parameters for said equations prior to conducting an experiment of the TMU analysis; and determining at least one of a total number N of samples to be measured in the TMU analysis and an average number ns of measurements per sample by the RMS.
G01B 21/00 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
A computerized system and method are provided for use in measuring at least one parameter of interest of a structure. The system comprises a server utility configured for data communication with at least first and second data provider utilities. The server utility receives, from the server provider utilities, measured data comprising first and second measured data pieces of different types indicative of parameters of the same structure; and is capable of processing the first and second measured data pieces for optimizing one or more first parameters values of the structure in one of the first and second measured data pieces by utilizing one or more second parameters values of the structure of the other of said first and second measured data pieces.
G06F 19/00 - Digital computing or data processing equipment or methods, specially adapted for specific applications (specially adapted for specific functions G06F 17/00;data processing systems or methods specially adapted for administrative, commercial, financial, managerial, supervisory or forecasting purposes G06Q;healthcare informatics G16H)
A metrology system is presented for measuring parameters of a structure. The system comprises: an optical system and a control unit. The optical system is configured for detecting light reflection of incident radiation from the structure and generating measured data indicative of angular phase of the detected light components corresponding to reflections of illuminating light components having different angles of incidence. The control unit is configured for receiving and processing the measured data and generating a corresponding phase map indicative of the phase variation along at least two dimensions, and analyzing the phase map using modeled data for determining one or more parameters of the structure.
A sample comprising an overlay target is presented. The overlay target comprises at least one pair of patterned structures, the patterned structures of the pair being accommodated in respectively bottom and top layers of the sample with a certain vertical distance h between them, wherein a pattern in at least one of the patterned structures has at least one pattern parameter optimized for a predetermined optical overlay measurement scheme with a predetermined wavelength range.
Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
G01B 15/00 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
H01L 21/66 - Testing or measuring during manufacture or treatment
A surface planarization system is presented. The system comprises an external energy source for generating a localized energy distribution within a processing region, and a control unit for operating the external energy source to create, by the localized energy distribution, a predetermined temperature pattern within the processing region such that different locations of the processing region are subjected to different temperatures. This provides that when a sample (e.g. semiconductor wafer) during its interaction with an etching material composition is located in the processing region, the temperature pattern at different locations of the sample's surface creates different material removal rates by the etching material composition (different etch rates).
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/263 - Bombardment with wave or particle radiation with high-energy radiation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G01B 21/08 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
71.
METHODS AND SYSTEMS FOR FABRICATING PLATELETS OF A MONOCHROMATOR FOR X-RAY PHOTOELECTRON SPECTROSCOPY
Methods and systems for fabricating platelets of a monochromator for X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a method of fabricating a platelet of a monochromator for X-ray photoelectron spectroscopy involves placing a crystal on a stage of an X-ray measuring apparatus, the crystal having a top surface. The method also involves measuring, by X-ray reflection, an orientation of a crystal plane of the crystal, the crystal plane beneath the top surface of the crystal and having a primary axis. The method also involves measuring a surface angle of the top surface of the crystal by measuring a light beam reflected from the top surface of the crystal.
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
A control system is presented for use in measuring one or more parameters of a sample. The control system comprises an input utility and a processor utility. The input utility is configured for receiving input data including first data comprising X-ray Diffraction or High-Resolution X-ray Diffraction (XRD) response data of the sample indicative of a material distribution in the sample, and second data comprising optical response data of the sample to incident light indicative of at least a geometry of the sample. The processor utility is configured and operable for processing and analyzing one of the first and second data for optimizing the other one of the first and second data, and utilizing the optimized data for determining said one or more parameters of the sample including a strain distribution in the sample.
G01N 23/083 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
G01N 21/84 - Systems specially adapted for particular applications
73.
METHOD AND SYSTEM FOR IMPROVING OPTICAL MEASUREMENTS ON SMALL TARGETS
A control system and method are provided for use in managing optical measurements on target structures. The control system comprises: data input utility for receiving input data indicative of a size of a target structure to be measured and input data indicative of illumination and collection channels of an optical measurement system; data processing utility for analyzing the input data, and an interplay of Point Spread Functions (PSFs) of the illumination and collection channels, and determining data indicative of optimal tailoring of apertures to be used in the optical measurement system for optimizing ensquared energy for measurements on the given target structure, the optimal tailoring comprising at least one of the following: an optimal ratio between numerical apertures of the illumination and collection channels; and an optimal orientation offset of physical apertures in the illumination and collection channels.
A method and system are presented for use in optical measurements on patterned structures. The method comprises performing a number of optical measurements on a structure with a measurement spot configured to provide detection of light reflected from an illuminating spot at least partially covering at least two different regions of the structure. The measurements include detection of light reflected from said at least part of the at least two different regions comprising interference of at least two complex electric fields reflected from said at least part of the at least two different regions, and being therefore indicative of a phase response of the structure, carrying information about properties of the structure.
Method and system for measuring one or more parameters of a patterned structure, using light source producing an input beam of at least partially coherent light in spatial and temporal domains, a detection system comprising a position sensitive detector for receiving light and generating measured data indicative thereof, an optical system configured for focusing the input light beam onto a diffraction limited spot on a sample's surface, collecting an output light returned from the illuminated spot, and imaging the collected output light onto a light sensitive surface of the position sensitive detector, where an image being indicative of coherent summation of output light portions propagating from the structure in different directions.
G01B 9/00 - Measuring instruments characterised by the use of optical techniques
G01B 11/25 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. moiré fringes, on the object
43 - Food and drink services, temporary accommodation
44 - Medical, veterinary, hygienic and cosmetic services; agriculture, horticulture and forestry services
Goods & Services
(1) The operation of independent living residences for seniors, nursing homes, rehabilitation centers, hospices and retirement living residences, excluding the operation of a retail drug store, provision of pharmacy services, or provision of retail sales services and rental services of medical equipment or medical supplies; providing home care and nursing care in homes, independent living residences and retirement living residences, excluding the operation of a retail drug store, provision of pharmacy services, or provision of retail sales services and rental services of medical equipment or medical supplies
A method and system are presented for use in controlling a process applied to a patterned structure having regions of different layered stacks. The method comprises: sequentially receiving measured data indicative of optical response of the structure being processed during a predetermined processing time, and generating a corresponding sequence of data pieces measured over time; and analyzing and processing the sequence of the data pieces and determining at least one main parameter of the structure. The analyzing and processing comprises: processing a part of said sequence of the data pieces and obtaining data indicative of one or more parameters of the structure; utilizing said data indicative of said one or more parameters of the structure and optimizing model data describing a relation between an optical response of the structure and one or more parameters of the structure; utilizing the optimized model data for processing at least a part of the sequence of the measured data pieces, and determining at least one parameters of the structure characterizing said process applied to the structure, and generating data indicative thereof.
An optical method and system are presented for use in measurement of isolated features of a structure. According to this technique, Back Focal Plane Microscopy (BFM) measurements are applied to a structure and measured data indicative thereof is obtained, wherein the BFM measurements utilize dark-field detection mode while applying pinhole masking to incident light propagating through an illumination channel towards the structure, the measured data being thereby indicative of a scattering matrix characterizing scattering properties of the structure, enabling identification of one or more isolated features of the structure.
A method and system are presented for use in inspection of via containing structures. According to this technique, measured data indicative of a spectral response of a via-containing region of a structure under measurements is processed, and, upon identifying a change in at least one parameter of the spectral response with respect to a spectral signature of the via-containing region, output data is generated indicative of a possible defect at an inner surface of the via.
G01N 21/00 - Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
G01N 22/00 - Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
80.
METHOD AND SYSTEM FOR USE IN OPTICAL MEASUREMENTS IN DEEP THREE-DIMENSIONAL STRUCTURES
A measurement system and method are presented for use in measuring in patterned structures having annularly-shaped vias. The system comprises illumination and detection channels, a polarization orientation system, a navigation system, and a control unit. The polarization orientation system provides at least one of a first polarization orientation condition corresponding to a first measurement mode enabling determination a depth of the via, and a second polarization orientation condition corresponding to a second measurement mode enabling determination of one or more parameters of a profile of the via, the first and second polarization orientation conditions defining first and second predetermined orientations respectively for polarization of the incident light relative a sidewall of the via.
Systems and methods for characterizing films by X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a system for characterizing a film may include an X-ray source for generating an X-ray beam having an energy below the k-edge of silicon. A sample holder may be included for positioning a sample in a pathway of the X-ray beam. A first detector may be included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. A second detector may be included for collecting an X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam. Monitoring/estimation of the primary X-ray flux at the analysis site may be provided by X-ray flux detectors near and at the analysis site. Both XRF and XPS signals may be normalized to the (estimated) primary X-ray flux to enable film thickness or dose measurement without the need to employ signal intensity ratios.
G01N 23/223 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
82.
MONITORING SYSTEM AND METHOD FOR VERIFYING MEASUREMENTS IN PATTERNED STRUCTURES
A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.
An optical system is presented for use in measuring in patterned structures having vias. The optical system comprises an illumination channel for propagating illuminated light onto the structure being measured; a detection channel for collecting light returned from the illuminated structure to a detection unit; and an attenuation assembly accommodated in the illumination and detection channels and being configured and operable for selectively attenuating light propagating along the detection channel, the attenuation creating a predetermined condition for the selectively attenuated light, said predetermined condition being defined by a predetermined ratio between a first light portion corresponding to a dark field condition and a second light portion corresponding to a bright field condition in said selectively attenuated light, detected selectively attenuated light being therefore indicative of at least one parameter of the via being illuminated.
An optical system is presented for use in measuring in patterned structures having vias. The system is configured and operable to enable measurement of a via profile parameters. The system comprises an illumination channel for propagating illuminated light onto the structure being measured, a detection channel for collecting light returned from the illuminated structure to a detection unit, and a modulating assembly configured and operable for implementing a dark-field detection mode by carrying out at least one of the following: affecting at least one parameter of light propagating along at least one of the illumination and detection channels, and affecting propagation of light along at least the detection channel.
A method of controlling a manufacturing process, the method including the steps of a) providing a testing area with a periodic structure, where the periodic structure includes a series of sets of patterned features, b) illuminating the periodic structure with a light, thereby producing a non-zero order diffraction signal, c) collecting the diffraction signal to produce a test signature, d) matching the test signature with a reference signature, where the reference signature was previously produced by performing steps a), b), and c) with respect to a reference structure that is at least similar to the periodic structure, and e) controlling a manufacturing process using a control setting set associated with the matching reference signature.
G01B 11/14 - Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
86.
METHOD AND SYSTEM FOR USE IN MEASURING IN COMPLEX PATTERNED STRUCTURES
A method and system are presented for use in measuring in complex patterned structures. A full model and at least one approximate model are provided for the same measurement site in a structure, said at least one approximate model satisfying a condition that a relation between the full model and the approximate model is defined by a predetermined function. A library is created for simulated data calculated by the approximate model for the entire parametric space of the approximate model. Also provided is data corresponding to simulated data calculated by the full model in selected points of said parametric space. The library for the approximate model data and said data of the full model are utilized for creating a library of values of a correction term for said parametric space, the correction term being determined as said predetermined function of the relation between the full model and the approximate model. This enable to process measured data by fitting said measured data to the simulated data calculated by the approximate model corrected by a corresponding value of the correction term.
A system and method are presented for use in inspection of patterned structures. The system comprises: data input utility for receiving first type of data indicative of image data on at least a part of the patterned structure, and data processing and analyzing utility configured and operable for analyzing the image data, and determining a geometrical model for at least one feature of a pattern in said structure, and using said geometrical model for determining an optical model for second type of data indicative of optical measurements on a patterned structure.
G01B 15/04 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
90.
SYSTEM AND METHOD FOR CONTROLLING A LITHOGRAPHY PROCESS
A measurement system and method is presented for measuring properties of a structure having a pattern of spaced-apart features arranged along a pattern axis. The measurement system comprises: a structure support unit defining a support plane for supporting the structure, an optical system comprising an illumination system defining an illumination path, and at least one detection system defining one or more detection paths, and a control system. The optical system has a predetermined numerical aperture, and is configured to define an incidence plane and the detection corresponding to dark-field detection mode for collecting light propagating from an illuminated region on the structure with a solid angle outside that of specular reflection, said incidence plane being oriented with respect to said support plane such as to form a selected angle other than 90 degrees with said pattern axis. The control system is configured and operable for receiving from the detection system data indicative of light detected with said dark-field mode and processing the received data by applying thereto predetermined modeled data based on a predetermined unit cell having a dimension along the patterned axis selected in accordance with the numerical aperture of the optical system.
43 - Food and drink services, temporary accommodation
44 - Medical, veterinary, hygienic and cosmetic services; agriculture, horticulture and forestry services
Goods & Services
(1) The operation of independent living residences for seniors, nursing homes, rehabilitation centres, hospices and retirement living residences; providing home care and nursing care in homes, independent living residences and retirement living residences.
92.
METHOD AND SYSTEM FOR MEASURNG IN PATTERNED STRUCTURES
A method and system are provided for use in measurement of at least one parameter of a patterned structure. The method comprises: providing input data comprising: measured data including multiple measured signals corresponding to measurements on different sites of the structure; and data indicative of theoretical signals, a relation between the theoretical and measured signals being indicative of at least one parameter of the structure; providing a penalty function based on at least one selected global parameter characterizing at least one property of the structure; and performing a fitting procedure between the theoretical and measured signals, said performing of the fitting procedure comprising using said penalty function for determining an optimized relation between the theoretical and measured signals, and using the optimized relation to determine said at least one parameter of the structure.
A test structure is presented test structure on a substrate for monitoring a LER and/or LWR effect, said test structure comprising an array of features manufactured with amplified LER and/or LWR effect.
A multi-station measurement system concept is presented, particularly based on an X-Y stage and plurality of horizontal load/unload units. The system allows loading/unloading of wafers from several load/unload units by the direct action of the X-Y stage, thus creating a buffer for wafers without actually requiring an additional buffer mechanism.
The present invention provides a novel system and method for obtaining at least one of a cross-section profile, depth, width, slope, undercut and other parameters of via-holes by non-destructive technique. The optical system comprises an illumination system for producing at least one light beam and directing it on a sample in a region of the structure containing at least one via-hole; a detection system configured and operable to collect a pattern of light reflected from the illuminated region, the light pattern being indicative of one or more parameters of said via-hole; and, a control system connected to the detection system, the control system comprising a memory utility for storing a predetermined theoretical model comprising data representative of a set of parameters describing via-holes reflected pattern, and a data processing and analyzing utility configured and operable to receive and analyze image data indicative of the detected light pattern and determine one or more parameters of said via-hole.
An optical measurement Method and System for spectroscopy are disclosed for evaluating the parameters of a sample. The device generally includes a broadband source for generating a light beam. Reflected light beam are simultaneously analyzed as a function of the position within the beam to provide information at multiple wavelengths and/or angular distribution. A Furier filter, comprising dispersion element and a two-dimensional photodetector array are used so that the beam may be simultaneously or consicuently analyzed at multiple angles of returned from the sample (diffracted) light at multiple wavelengths.
A method and system are presented for use in characterizing properties of an article having a structure comprising a multiplicity of sites comprising different periodic patterns. The method comprises: providing a theoretical model of prediction indicative of optical properties of different stacks defined by geometrical and material parameters of corresponding sites, said sites being common in at least one of geometrical parameter and material parameter; performing optical measurements on at least two different stacks of the article and generating optical measured data indicative of the geometrical parameters and material composition parameters for each of the measured stacks; processing the optical measured data, said processing comprising simultaneously fitting said optical measured data for the multiple measured stacks with said theoretical model and extracting said at least one common parameter, thereby enabling to characterize the properties of the multi-layer structure within the single article.
A system for substrate handling proposed, comprising an optical local tilt detector, a plurality of arms each having vertically extended movable along vertical axis fingers to contact the edge of a substrate, wherein at least one of the arms has a linear actuator moveable arm and each of the fingers provided by z-axis miniature linear actuator; and a control unit connected to said tilt detector and said z-axis linear actuators enabling measuring and correcting of local tilt.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
