Systems and methods for training a machine learning model for defect detection include obtaining training data including an inspection image of a fabricated integrated circuit (IC) and design layout data of the IC, and training a machine learning model using the training data. The machine learning model includes a first autoencoder and a second autoencoder. The first autoencoder includes a first encoder and a first decoder. The second autoencoder includes a second encoder and a second decoder. The second decoder is configured to obtain a first code outputted by the first encoder. The first decoder is configured to obtain a second code outputted by the second encoder.
A method for processing images for metrology using a charged particle beam tool may include obtaining, from the charged particle beam tool, an image of a portion of a sample. The method may further include processing the image using a first image processing module to generate a processed image. The method may further include determining image quality characteristics of the processed image and determining whether the image quality characteristics of the processed image satisfy predetermined imaging criteria. The method may further include in response to the image quality characteristics of the processed image not satisfying the imaging criteria, updating a tuning condition of the charged-particle beam tool, acquiring an image of the portion of the sample using the charged-particle beam tool that has the updated tuning condition, and processing the acquired image using the first image processing module to enable the processed acquired image to satisfy the predetermined imaging criteria.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of training a generator model comprising: using the generator model to generate the predictive data based on the first measured data, wherein the first measured data and the predictive data can be used to form images of the sample; pairing subsets of the first measured data with subsets of the predictive data, the subsets corresponding to locations within the images of the sample that can be formed from the first measured data and the predictive data; using a discriminator to evaluate a likelihood that the predictive data comes from a same data distribution as second measured data measured from a sample after an etching process; and training the generator model based on: correlation for the pairs corresponding to a same location relative to correlation for pairs corresponding to different locations, the correlation being the correlation between the paired subsets of data, and the likelihood evaluated by the discriminator.
Current substrate (e.g., semiconductor wafer) coupling (e.g., bonding) process control methodology uses measured substrate flatness and shape to control the coupling process. Current equipment configurations and coupling processes introduce high substrate (e.g., semiconductor wafer edge) distortion that causes pronounced non-correctable (e.g., overlay and/or other) errors, and significant substrate-to-substrate distortion variation because the current coupling processes are highly substrate material property dependent. The measured flatness and shape do not provide sufficient indications of these substrate material properties. Advantageously, in the described systems and methods, key substrate material properties, such as elastic modulus (E), geometrical properties (I), and deformation moments (M), are determined for a specific substrate just prior to coupling based on directly measured substrate deformation, then provided as feedback for real-time adjustments to the coupling process for that substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
6.
PROJECTION SYSTEM CHARACTERISATION SYSTEM AND METHOD
Disclosed herein is a computing system configured to perform a method for determining aberrations of an optical system in response to patterned light, the method comprising: determining a combination of test features that substantially corresponds to an arrangement of product features on a patterning device arranged to pattern light before the light passes through the optical system; and determining aberrations caused by the response of the optical system to the patterned light in dependence on the known response of each test feature in the determined combination.
A radiation system comprising a deformable minor having a reflective surface arranged to receive and reflect a laser beam to form a reflected laser beam, a beam splitter arranged to separate the reflected laser beam into a first portion and a second portion, a sensor, a focusing system configured to form an image of the reflective surface at the sensor using the first portion of the reflected laser beam, the sensor being configured to output beam data representative of the reflected laser beam, means for generating radiation using the second portion of the reflected laser beam, and a controller operable to cause the deformable mirror to deform the reflective surface based on the beam data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
8.
OPTICAL VORTEX BASED METROLOGY SYSTEMS AND METHODS
Optical vortex based metrology systems and methods are described. A radiation source is configured to irradiate a metrology target in one or more layers of a patterned substrate with radiation. The metrology target is configured to diffract and impart orbital angular momentum to the radiation from the radiation source. A radiation sensor is configured to generate a metrology signal based on the orbital angular momentum of the diffracted radiation received from the metrology target. The metrology signal comprises alignment position information and/or overlay information for the one or more layers. Advantageously, orbital angular of momentum of diffracted radiation can carry additional information useful to generate more accurate measurement compared to existing metrology systems, where only phase or intensity information is used.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
9.
SYSTEMS AND METHODS FOR MOTION CONTROL OF A PATTERNING DEVICE IN A LITHOGRAPHY APPARATUS
A reticle is typically clamped to a chuck in a lithography apparatus by clamps. The force provided by the clamps may limit how fast the reticle can accelerate (e.g., if the reticle accelerates too quickly, momentum of the reticle may break the clamping force and the reticle may slip on the chuck). A new motion control system is described, which applies a pushing force to the reticle during acceleration, to keep the reticle in its intended position during movement. The system comprises a first portion coupled to a short stroke stage of the lithography apparatus and a second portion coupled to a long stroke stage. The first portion is configured to push on the reticle so that it stays in its intended position. The second portion is configured to interact with the first portion to cause the first portion to support the reticle.
Cloin, Christian, Gerardus, Norbertus, Hendricus, Marie
Van Mil, Joost, Johannes, Lambertus
Van Kampen, Maarten
Cats, Selwyn, Yannick, Frithjof
Abstract
An optical element for an EUV lithographic apparatus, the optical element comprising: an optical surface (151) configured to receive radiation; a support member (152) that is electrically conductive; and a spacer (155) that is electrically insulating and configured to electrically isolate the optical surface, wherein a capacitance between surfaces separated by the spacer is less than 1 pF.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G02B 7/18 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors
An assembly for a lithographic apparatus, wherein the assembly is configured to heat a pellicle membrane by one of or a combination selected from: i) provision of heated gas, ii) radiative heating, iii) resistive heating, and/or iv) inductive heating, and/or by illuminating the pellicle membrane with light having a wavelength of from around 91 nm to around 590 nm. Also a method of extending the operative lifespan of a pellicle membrane, the method including heating at least a portion of a pellicle membrane when illuminated by EUV by one of or a combination selected from: i) providing heated gas, ii) radiative heating, iii) resistive heating, and/or iv) inductive heating to effect heating of the at least one portion of the pellicle membrane, and/or by illuminating the pellicle membrane with light having a wavelength of from around 91 nm to around 590 nm.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
12.
METHOD FOR CONTROLLING A PRODUCTION SYSTEM AND METHOD FOR THERMALLY CONTROLLING AT LEAST PART OF AN ENVIRONMENT
A method of generating control actions for controlling a production system, such as by transmitting the control actions to a control system of the production system. The method includes receiving, by a memory unit, a set of observation data characterizing a current state of the production system; processing, by a first neural network module of the memory unit, an input based on at least part of the observation data to generate encoded observation data; updating, by a second neural network module of the memory unit, history information stored in an internal memory of the second module using an input based on at least part of the observation data; obtaining, based on the encoded observation data and the updated history information, state data; and generating, based on the state data, one or more control actions.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G06N 3/044 - Recurrent networks, e.g. Hopfield networks
An improved systems and methods for generating a denoised inspection image are disclosed. An improved method for generating a denoised inspection image comprises acquiring an inspection image; generating a first denoised image by executing a first type denoising algorithm on the inspection image; and generating a second denoised image by executing a second type denoising algorithm on the first denoised image.
A heterodyne interferometer system comprises: a first light source providing a first laser beam having a first frequency f1; a second light source providing a second laser beam having a second frequency f2 which differs from the first frequency; a combiner for polarizing the first and second laser beams and for providing an input beam wherein the polarized first and second laser beams are combined; an optical resonator cavity comprising an odd number of at least partially reflective mirrors arranged in the cavity for reflecting and circulating the input beam in the cavity, the cavity being adapted for receiving the input beam and providing an output beam comprising a first spatial mode having the first frequency f1 and a first polarization and a second spatial mode having the second frequency f2 and a second polarization which differs from the first polarization; and a heterodyne interferometer for receiving the output beam.
G01B 9/02003 - Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using beat frequencies
G01B 9/02001 - Interferometers characterised by controlling or generating intrinsic radiation properties
A lithographic apparatus comprises: a substrate table; a projection system; a gas lock funnel; and a membrane. The substrate table is configured to hold a substrate. The projection system comprises optics configured to project radiation onto a target portion of the substrate. The membrane is supported by the gas lock funnel and arranged between the projection system and the substrate table. The gas lock funnel may defines a nozzle that is arranged to provide a gas in the vicinity of the membrane such that on the projection system side of the membrane the gas is directed preferentially towards a peripheral portion of the gas lock funnel. A final optical element of the projection system may have a central aperture and the nozzle may be arranged to direct the gas preferentially away from the central aperture in the final optical element.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
16.
MEMBRANE MONITORING APPARATUS AND METHOD, AND LITHOGRAPHIC APPARATUS
A monitoring subsystem for monitoring a membrane in use in a lithographic apparatus, the monitoring subsystem comprising: a light source configured to illuminate the membrane, the membrane being arranged between a first region and a second region of the lithographic apparatus; a light detector configured to measure a total power of light incident on a field of view of the light detector, the light being emitted from the light source and reflected off the membrane; and a controller configured to determine a level of degradation of the membrane at least in part based on the measured total power of light incident on the field of view of the light detector.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
Systems and methods for source or mask optimization of a patterning process. Methods may include performing a lithography simulation to predict patterning results; identifying stochastic defects from the predicted patterning results; defining a cost function and a pseudo-gradient; determining a metric of the stochastic defects and the pseudo-gradient for the cost function associated with a performance metric of the patterning process at evaluation locations; and iteratively adjusting the characteristics of the mask or the source based on the metric and the guide function. Methods may include performing a lithography simulation to generate a resist image (RI); determining stochastic errors as a function of a variable bias map (VBM) and the RI; determining a cost function comprising the stochastic errors; determining a gradient of the cost function; and iteratively adjusting the characteristics of the mask or the source based on the gradient of the cost function.
Systems and methods of aligning beams with an aperture array for multi-beam inspection of a sample are disclosed. The method comprises the steps of forming a plurality of primary charged-particle beamlets from a charged-particle beam, positioning a movable aperture plate upstream from a first aperture array in a first position, wherein in the first position, apertures of the movable aperture plate are aligned with corresponding apertures of the first aperture array, adjusting a path of the primary charged-particle beamlets, using a charged-particle beam alignment deflector, to enable a portion of charged particles of the primary charged-particle beamlets to pass through the aligned apertures, resulting in an alignment between the beamlets and the corresponding apertures of the first aperture array, and moving the movable aperture plate in a second position to enable the primary charged-particle beamlets to pass through the first aperture array without passing through the movable aperture plate.
MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. (Germany)
Inventor
Uebel, Patrick, Sebastian
Frosz, Michael, Henoch
Abstract
A method of determining a dimensional parameter of a microstructured optical fiber (MOF), the method comprising: directing radiation towards the MOF; obtaining one or more signals associated with interference of the radiation between structural elements of the MOF; determining a distance between the structural elements based on the one or more signals associated with interference of the radiation between structural elements of the MOF; and determining the dimensional parameter based on the determined distance. A method for obtaining a MOF is also described.
A substrate arrangement for use in a lithographic apparatus, the substrate arrangement including: a resist; a photosensitive resist under-layer; and a substrate, wherein an exposure threshold of the resist under-layer is lower than an exposure threshold of the resist. The resist and the resist under-layer may be both photosensitive to EUV radiation.
G03F 7/095 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
The embodiments of the present disclosure provide a method of processing data derived from a sample, comprising processing an initial data set of elements derived from a detection by a detector for calibration, the data set comprising elements representing nuisance signals and detection signals. The processing of the initial data set comprising: fitting a distribution model to the initial data set to create a nuisance distribution model; setting a signal strength value, and selecting elements in the initial data set having a magnitude greater than the signal strength value as a set of defect candidates; fitting a distribution model to the set of defect candidates to create a defect distribution model of detection signals; and determining a signal strength threshold dependent on at least the defect distribution model. The determining comprising correcting the defect distribution model.
A charged particle-optical device for projecting a plurality of charged particle beams along respective beam paths towards a sample location, the charged particle-optical device comprising: a charged particle-optical assembly configured to manipulate the charged particle beams, the charged particle-optical assembly comprising a first charged particle-optical element comprising a plate having one or more apertures around a beam path of the charged particle beams; and an electrical connector configured to electrically connect the plate of the first charged particle-optical element to an electrical power source, wherein the electrical connector: comprises a shield configured to define a field free region substantially free of electric fields; and is configured to be electrically connectable to a flexible coupling configured to electrically connect the plate of the first charged particle-optical element to the electrical power source, the flexible coupling located within the field free region.
Described is a method for assessing a plurality of candidate actions for obtaining evidence data and relating to an assessment action of at least one manufacturing apparatus or system, the method comprising: obtaining at least one probabilistic model which relates said evidence data to an estimated probability of one or more root cause assessments of the manufacturing apparatus; determining, using the at least one probabilistic model, an estimated probability of one or more root cause assessments based on evidence data comprising additional evidence from one or more candidate actions which have not been performed (400); determining a reward based on the respective estimated probability of the one or more root cause assessments and an associated respective cost of said one or more candidate actions; and deciding on whether to perform any of said one or more candidate actions based on said reward.
The present disclosure provides a method for real time parameter tuning for a wafer inspection system. The method comprises acquiring one or more input images streamed from the wafer inspection system; applying a plurality of image enhancement parameters to the one or more input image to generate a plurality of images with different characteristics; identifying defects from the plurality of images by applying a plurality of defect detection parameters; and determining, based on the defects identified on the plurality of images, a parameter combination of the plurality of image enhancement parameters and of the plurality of the defect detection parameters to be used for detecting a first defect type.
A transfer line for transferring molten metal from a reservoir to a nozzle is disclosed. The transfer line comprises a plurality of heater zone members in thermal contact with one another. The heater zone members are arranged to maintain a temperature of the metal over the transfer line such that the metal remains in a molten state. The transfer line comprises thermal interconnection members arranged between adjacent ones of the heater zone members. Thermal contact between adjacent heater zone members is provided by the thermal interconnection members.
The invention provides a setpoint generator for a position control system of a positioner comprising a master module and a slave module, the positioner being configured to displace an object, the setpoint generator being configured to, during a displacement of the object: - determine a master setpoint trajectory for the master module; - determine a slave setpoint trajectory for the slave module by means of an optimization algorithm; the optimization algorithm using at least part of the master setpoint trajectory, one or more boundary conditions and an objective function, the objection function being associated with a performance characteristic of the positioner.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G05B 19/19 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by positioning or contouring control systems, e.g. to control position from one programmed point to another or to control movement along a programmed continuous path
27.
MEMBRANES FOR USE WITHIN A LITHOGRAPHIC APPARATUS AND A LITHOGRAPHIC APPARATUS COMPRISING SUCH A MEMBRANE
A self-standing membrane for a lithographic apparatus, the membrane comprising a MoSi2 layer, wherein the membrane is transmissive for at least 65% EUV radiation.
28.
SYSTEMS AND METHODS FOR GENERATING MULTIPLE ILLUMINATION SPOTS FROM A SINGLE ILLUMINATION SOURCE
Spots of illumination directed at a target are described. Ghost reflections often prevalent in wafer alignment sensors are reduced or eliminated. First, second, and third optical elements are described. The first optical element receives illumination along a first axis, reflects a first portion of the illumination away from the first axis, and transmits a second portion of the illumination along the first axis. The second first optical element receives the first portion of the reflected illumination and at least partially reflects a third portion of the illumination along a second axis. The third first optical element receives and fully reflects a fourth portion of the illumination along a third axis. The second portion, third and fourth portions of the illumination are directed toward the target at different angles relative to each other to create three different spots of illumination.
A charged particle assessment apparatus for detecting defects in samples by scanning a charged particle beam across a sample; the apparatus comprising:
A charged particle assessment apparatus for detecting defects in samples by scanning a charged particle beam across a sample; the apparatus comprising:
a detector unit configured to output a digital detection signal of pixel values in response to signal particles incident from the sample, the pixel values representing elongate pixels.
A metrology system includes a light beam metrology apparatus configured to sense one or more aspects of an amplified light beam and to make adjustments to the amplified light beam based on the sensed one or more aspects; a target metrology apparatus configured to measure one or more properties of a modified target after a target has interacted with the amplified light beam, and to determine a moment when the modified target achieves a reference calibration state; and a control apparatus configured to: receive the reference calibration state and the moment at which the reference calibration state is achieved from the target metrology apparatus; determine a light beam calibration state of the amplified light beam based on the received reference calibration state and the moment at which the reference calibration state is achieved; and provide the light beam calibration state to the light beam metrology apparatus.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
A charged particle-optical apparatus for assessing a sample at an assessment location, the charged particle-optical apparatus comprising: an assessment charged particle-optical device configured to project an assessment charged particle beam along an assessment beam path toward an assessment location, the assessment charged particle beam for assessing a sample at the assessment location; a preparatory charged particle-optical device configured to project a preparatory charged particle beam along a preparatory beam path, the preparatory charged particle beam for preparing a sample for assessment; and a light source configured to project a light beam toward an illumination location; wherein a locational relationship between the illumination location and the assessment charged particle-optical device is different from a locational relationship between the assessment location and the assessment charged particle-optical device.
In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The present disclosure provides a lithographic process for handling two substrates in parallel, the process comprising the steps of: - exposing a first substrate on a first substrate table; - determining an available delay time for executing a second substrate sequence for measuring of a second substrate, and - optimizing the second substrate sequence taking into account the available delay time by delaying at least a part of the second substrate sequence. The second substrate is a closing wafer and the second substrate sequence is a closing wafer sequence. The process comprises the steps of determining whether the second substrate sequence is production critical; and if the second substrate sequence is production critical, executing the second substrate sequence without delay.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An actuator system includes a linear motor that has a first part, the first part being electrically communicable with a multi-phase power source and comprising an array of coils, the coils each having a respective ferromagnetic core, a second part, the second part comprising an array of magnets, the first and second parts being movable relative to each other in response to electrical signals from the multi- phase power source, a force sensor, configured to measure a force of mutual attraction between the first part and the second part, and a controller, configured to control the electrical signals responsive to variations in the force of mutual attraction.
A transport system includes an object stage, two opposing pairs of linear motors, and a controller. The two opposing pairs of linear motors accelerate the object stage along a longitudinal axis and maintain a vertical gap between the object stage and the two opposing pairs of linear motors along a vertical axis. The controller is coupled to the two opposing pairs of linear motors and controls movement of the object stage and the vertical gap. The transport system can include reluctance actuators coupled to the object stage to maintain the vertical gap and a horizontal gap between the object stage and the reluctance actuators by counter-balancing forces generated by the controller. Advantageously the transport system can reduce contamination (avoids gas bearings), reduce parasitic normal forces, reduce cogging, provide low negative stiffness, maintain precise linear control of the object stage, and maintain equal gaps around the object stage during high acceleration.
A reticle conditioning nozzle configured to supply conditioning fluid to a sub-volume of a reticle handling module includes an inlet end, configured to receive conditioning fluid from a conditioning fluid source, an outlet end, configured to distribute the conditioning fluid into the sub-volume of the reticle handling module, wherein the outlet end is configured to deliver two separated fluid flows, a first fluid flow across a top surface of a reticle in the reticle handling module, and a second fluid flow across a bottom surface of the reticle, and a transitional section, comprising vanes disposed between the inlet end and the outlet end, the transitional section being configured to vary a flow of the conditioning fluid across a width of the outlet end such that a temperature gradient across a surface of the reticle is reduced.
A droplet generator for an EUV light source includes a fluid cavity within a structure, the fluid cavity having a first fluid cavity end being open or otherwise capable of receiving a fluid and a second fluid cavity end; a particle filter within the fluid cavity dividing the fluid cavity into an upstream volume between an upstream surface of the particle filter and the first fluid cavity end, a filter volume occupied by the filter, and a downstream volume downstream of a downstream surface of the filter; and a tube having a first opening positioned outside the fluid cavity, the tube extending from the first opening through the second fluid cavity end to a second opening within the downstream volume, the tube extending into the downstream volume by more than 10% of a distance from the first opening to the second opening.
An optical apparatus is disclosed, the apparatus comprising an optical element having a reflective surface for reflecting incident radiation in a beam path, and at least one sensor configured to sense radiation corresponding to a temperature of a respective portion of a backside surface of the optical element. Also disclosed is a method of controlling a temperature of a reflective surface of an optical element in a lithographic apparatus.
G01K 11/12 - Measuring temperature based on physical or chemical changes not covered by group , , , or using changes in colour, translucency or reflectance
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
39.
METHOD OF DETERMINING A POSITIONING CORRECTION FOR A LITHOGRAPHIC PROCESS
Disclosed is a method of determining a positioning correction of a substrate in a lithographic process. The method comprises obtaining a trained first model, the trained first model having been trained to minimize a force balance residual of forces on a substrate subsequent to performing at least one action resulting in a physical deformation of said substrate, said physical deformation being impacted by nonlinear frictional interaction between the substrate and a substrate support supporting the substrate, for various training datasets; obtaining estimated substrate deformation data relating to the substrate; inputting said estimated substrate deformation data into said trained first model to obtain modeled substrate deformation data relating to said substrate subsequent to said action, said modeled substrate deformation data accounting for said nonlinear frictional interaction between the substrate and the substrate support; and determining a positioning correction of said substrate in an exposure using said modeled substrate deformation data.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
40.
SEMI-SUPERVISED, SELF-SUPERVISED, AND REINFORCEMENT LEARNING MACHINE LEARNING MODELS FOR MASK PREDICTION
A method for training a machine learning (ML) model for mask pattern generation, comprising: obtaining the ML model, the ML model configured to generate an output mask pattern based on an input pattern; and training the ML model by: applying the ML model to a input training pattern to generate a predicted mask pattern; applying a forward model to the predicted mask pattern to generate a predicted wafer pattern, the forward model configured to predict an output wafer pattern based on an input mask pattern; determining a difference between the target wafer pattern and the predicted wafer pattern; and adjusting the ML model based on the difference between the target wafer pattern and the predicted wafer pattern. A method for training a generative model to create mask patterns is also provided. Some embodiments provide model refinement through reinforcement learning, which may be used with any other model provided.
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of measuring a parameter of a structure of a substrate comprises directing a beam of an emitted radiation onto the structure and thereby generating a diffracted radiation due to diffraction by the structure. The emitted radiation has a spectrum comprising a plurality of peaks. The method further comprises using an imaging sensor to detect the diffracted radiation; using knowledge regarding the spectrum and a prior of the diffraction efficiency to obtain an estimate of diffraction efficiency as a function of wavelength; and using the estimated diffraction efficiency to measure the parameter of the structure.
Multiple cover store positions are provided within an in-vacuum reticle library area of a lithographic apparatus. A system for handling a reticle includes a vacuum chamber, a library configured to hold reticle pods in vacuum in reticle pod positions disposed within the vacuum chamber, each reticle pod including a respective baseplate, reticle, and cover. The system includes an in-vacuum robot to selectively pick a reticle from the plurality of reticles and provide the picked reticle to a reticle exchange device, and a plurality of actuators, each actuator corresponding to a respective one of the pod positions, and each actuator being arranged to remove the cover from a corresponding reticle pod and move the cover into a cover storage position associated with the corresponding reticle pod.
A method of operating a microlithographic projection exposure apparatus (10) is described. The exposure apparatus comprises a mask holder (20) for holding a mask (18), a substrate holder (26) for holding a substrate (24), a projection lens (30) having several optical elements (R1 - R4) for imaging mask structures of the mask onto the substrate and a manipulator system (34), wherein the optical elements, the mask holder and the substrate holder each are an optical path element in an exposure optical path of the projection exposure apparatus and the manipulator system is configured for adjusting several travels, defined by travel variables (68), at the optical path elements of the projection lens. The method comprises the following steps: providing a wave front deviation (50) of the projection lens, and determining a control command (42) comprising travels for the manipulator system for correcting the wave front deviation using a model (60). The model describes the wave front deviation as a function of the travel variables and for this comprises a group of offset coefficients (62), which are independent of the travel variables, a group of linear coefficients (64), which are each attributed to one of the travel variables to the power of one, and a group of quadratic coefficients (66), which are each attributed to a product of two of the travel variables or to a square of one of the travel variables. The offset coefficients (62) are calibrated more frequently than the linear coefficients (64).
Disclosed herein is a method of automatically obtaining training images to train a machine learning model that improves image quality. The method may comprise analyzing a plurality of patterns of data relating to a layout of a product to identify a plurality of training locations on a sample of the product to use in relation to training the machine learning model. The method may comprise obtaining a first image having a first quality for each of the plurality of training locations, and obtaining a second image having a second quality for each of the plurality of training locations, the second quality being higher than the first quality. The method may comprise using the first image and the second image to train the machine learning model.
G06V 10/98 - Detection or correction of errors, e.g. by rescanning the pattern or by human interventionEvaluation of the quality of the acquired patterns
45.
UTILIZE MACHINE LEARNING IN SELECTING HIGH QUALITY AVERAGED SEM IMAGES FROM RAW IMAGES AUTOMATICALLY
A method for evaluating images of a printed pattern. The method includes obtaining a first averaged image of the printed pattern, where the first averaged image is generated by averaging raw images of the printed pattern. The method also includes identifying one or more features of the first averaged image. The method further includes evaluating the first averaged image, using an image quality classification model and based at least on the one or more features. The evaluating includes determining, by the image quality classification model, whether the first averaged image satisfies a metric.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A lithographic apparatus comprising a support structure configured to support a patterning device such that the patterning device is positionable in an illumination region; an illumination system operable to receive radiation and direct at least a portion of the received radiation to the illumination region; a substrate table configured to support a substrate; a projection system operable to form an image of a portion of a patterning device supported by the support structure on a substrate supported by the substrate table; a scanning system operable to move the support structure relative to the illumination region along a scanning trajectory so as to move the patterning device supported by the support structure through the illumination region along the scanning trajectory; wherein the illumination system is configured to control a shape of the illumination region based on an overlay error or a focus error.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
47.
ELECTROMOTIVE FORCE BRAKING IN A LITHOGRAPHIC APPARATUS
A braking system can include a moving frame, one or more balance masses, one or more actuators, and one or more mechanical buffers. The moving frame can move with a predetermined kinetic energy. The one or more balance masses can absorb reaction forces exerted by the moving frame. The one or more actuators can move the moving frame and stop movement of the moving frame through braking to prevent collision damage in an error scenario. The one or more actuators can be electrically shorted to generate an electromotive braking force opposite to a direction of motion of the moving frame to reduce the kinetic energy of the moving frame and to reduce a braking distance of the moving frame. The one or more mechanical buffers can absorb a remainder of the kinetic energy of the moving frame remaining after the one or more actuators have completed their braking action.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
48.
INSPECTION APPARATUS, WEDGE SYSTEM FOR REDUCING ABERRATIONS, AND METHOD OF FABRICATION THEREOF
A method of reducing optical aberrations in an optical system includes determining an aberration induced by the optical system. The determining includes transmitting a first beam of radiation having a first wavelength through a wedge system of the optical system. The wedge system includes radiation-curable adhesive disposed between first and second wedges. The determining also includes analyzing the first beam using a detector disposed downstream of the wedge system to determine the aberration. The method also includes curing the radiation-curable adhesive based on the analyzing of the first beam. The curing includes adjusting, using a spatial light modulator, an intensity distribution of a second beam of radiation, having a second wavelength different than the first wavelength, based on the analyzing of the first beam. The curing also includes directing the second beam to the radiation-curable adhesive to induce a position-dependent optical property at the radiation-curable adhesive.
There is provided a carbon nanotube pellicle membrane for a lithography apparatus, the pellicle membrane including a sacrificial coating. Also provided is a pellicle for a lithographic apparatus, the pellicle including such a pellicle membrane and a support frame for supporting the pellicle membrane, as well as a lithographic apparatus comprising such a pellicle membrane or pellicle. Also described is a method and apparatus for manufacturing a pellicle membrane, as well as the use of such a pellicle membrane, pellicle, lithographic apparatus, method or manufacturing apparatus in a lithographic method or apparatus.
Disclosed is a method of determining an exposure strategy for at least a first exposure in a first layer of a substrate with a first correction capability and at least a second exposure in a second layer of said substrate with a second correction capability, the second correction capability being different to the first correction capability, the method comprising: determining a first layer correctable error component of said first layer parameter of interest data, which is correctable according to said first correction capability; determining a first portion of said first layer correctable error component uncorrectable according to said second correction capability; dividing said first portion of said first layer correctable error into at least a first sub-portion and a second sub-portion; and attributing said first sub-portion to a first exposure error budget and said second sub-portion a second exposure error budget.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
51.
MULTIPLE PITCH SEM OVERLAY MARKS AND ALGORITHM FOR STITCHING AREA
Improved systems and methods for determining stitching overlay and other metrology parameters in semiconductor manufacturing are disclosed. The systems and methods may include acquiring a measured image of multiple overlay marks within a single field of view of an inspection system; individually tuning the image processing algorithm parameters of the measured image for each overlay mark to determine measured values of each overlay mark; and comparing the measured values to determine the stitching overlay or other metrology parameters.
The disclosure relates to determining information about a target structure formed on a substrate using a lithographic process. In one arrangement, a cantilever probe is provided having a cantilever arm and a probe element. The probe element extends from the cantilever arm towards the target structure. Ultrasonic waves are generated in the cantilever probe. The ultrasonic waves propagate through the probe element into the target structure and reflect back from the target structure into the probe element or into a further probe element extending from the cantilever arm. The reflected ultrasonic waves are detected and used to determine information about the target structure.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An optical system comprising an optical component configured to modify electromagnetic radiation and an electric motor configured to actuate the optical component. The electric motor comprises a mover comprising a plurality of magnetic components connected to the optical component. The electric motor comprises a stator unconnected to the mover comprising a plurality of electric components configured to receive an electric current and thereby interact with a magnetic field of the plurality of magnetic elements for contactless actuation of the optical component.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G02B 7/02 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
54.
VERTICALLY FEDERATED TRAINING OF A MACHINE LEARNING MODEL USED BY DIFFERENT PARTICIPANTS FOR CONFIGURING A SEMICONDUCTOR MANUFACTURING PROCESS
Training a machine learning model used by different participants is described. Vertically federated learning is used to train the model with time series data sets. Time series data sets received from different participants are aligned, with each time series data set comprising different features corresponding to one or more samples common to each participant, but preserving the privacy of each time series data set for participants. First model parameters are received from a first participant. These are determined based on the aligning and first features provided by the first participant in a first time series data set. Second model parameters are received from a second participant. These are determined based on the aligning, second features provided by the second participant in a second time series data set, and semiconductor manufacturing process outputs associated with the second features. The model is trained based on the first and second model parameters.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
55.
LEARNING-BASED LOCAL ALIGNMENT FOR EDGE PLACEMENT METROLOGY
A charged particle beam inspection method for edge placement error detection includes acquiring a grayscale inspection image and performing a series of transformations between the inspection image and a binary reference image to calculate a deformation map. The deformation map may then be applied to the binary reference image to generate a binary customized contour image that matches the edge locations of patterns in the inspection image.
The invention provides an object holder to hold an object, comprising: a clamp side to clamp the object, wherein the clamp side is electrically conductive, at least one electrode arranged at a distance from the clamp side, and electrically isolated from the clamp side, a controller arranged to provide an electrode voltage to the at least one electrode based on a measured charge signal representative for a charge level of the object holder and/or the object in order to decrease a potential difference between an electrical potential of the clamp side and an electrical potential of the object.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
57.
MECHANICALLY CONTROLLED STRESS-ENGINEERED OPTICAL SYSTEMS AND METHODS
A fast and dynamic waveplate is described. The present systems and methods utilize stress birefringence that generates inside a plate when force is applied on one or more sides of the plate. The force is applied using one or more actuators distributed along the side(s) of the plate. The magnitude of the force can be controlled using a control unit. A generated stress birefringence is spatially varying across the plate. By carefully adjusting the force, the plate can be converted into a waveplate with an arbitrary value of retardance that is determined by the force. Since the parameter that determines the birefringence is force, a control unit can be used to apply different combinations of force values at a sub-millisecond speed to achieve fast control of the value of the birefringence as well as an orientation in the plate.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
58.
SUBSTRATE TABLE, LITHOGRAPHIC APPARATUS, STICKER, COVER RING AND METHOD OF OPERATING A LITHOGRAPHIC APPARATUS
A substrate table, for use in an immersion lithographic apparatus, having a support area defining a support plane to support a substrate to be patterned and an upper surface surrounding the support area, wherein: the upper surface has an outer region that is substantially planar and a transition region proximate the support area; and the transition region is not co-planar with the outer region so as to ameliorate a level transition between the outer region and a non-standard substrate, which has a thickness different than a distance between the support plane and a nominal plane defined by the outer region.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
59.
CONFIDENTIALITY-PRESERVING COLLABORATIVE MODEL FOR DERIVING INFORMATION ON A PRODUCTION SYSTEM
A method is presented for using a distributed network to derive information characterising a production system described by variables. The network comprises two probabilistic models implementing a graph comprising nodes associated with a corresponding one of the variables, and directed edges connecting respective pairs of the nodes. Each graph comprises an interface node for which the corresponding associated variable is common and normal nodes to which edge(s) are directed that are associated with a respective conditional probability table (CPT) specifying a probability of the variable being in a set of states based on the variables associated with the corresponding one or more nodes from which the one or more edges are directed. The interface node is associated with a partial CPT of the common variable. The method comprises generating, using the at least two models, conditioned data specifying a probability distribution of the state of the common variable.
Disclosed herein is a tool for an EUV exposure process, the tool comprising: a substrate support arranged to support a substrate; an electrode arranged in the path of the EUV radiation and between the substrate support and a main illumination region, wherein the main illumination region is a region through which patterned EUV radiation propagates to illuminate a substrate in the EUV exposure process; and a power supply arrangement configured to generate an electric field in a substrate supported by the substrate support.
Described is a method and system for reducing a mask three-dimensional (M3D) induced contrast loss in a lithography process. A diffraction pattern of a target pattern is determined based on a zeroth and first order diffraction of the target pattern. The diffraction pattern is discretized and partitioned into zeroth order and first order diffraction zones to create partitioned zones. A wavefront target is determined based on the partitioned zones and a desired phase shift between the zeroth order diffraction and the first order diffraction.
G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masksPreparation thereof
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
62.
METHOD FOR REDUCING THE EFFECTS OF PARASITIC FORCES AND/OR MOMENTS ON THE IMAGING QUALITY OF A PROJECTION-EXPOSURE APPARATUS, AND PROJECTION-EXPOSURE APPARATUS WITH A MODULE
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
63.
HIERARCHICAL ANOMALY DETECTION AND DATA REPRESENTATION METHOD TO IDENTIFY SYSTEM LEVEL DEGRADATION
A method for training a diagnostic model for diagnosing a production system, wherein the production system includes a plurality of sub-systems. The diagnostic model includes, for each sub-system, a corresponding first learning model arranged to receive input data, and to generate compressed data for the production system in a corresponding compressed latent space. A second learning model is arranged to receive the compressed data generated by the first learning models, and generate further compressed data for the production system in a further compressed latent space. The method includes performing training of the first and second learning models based on training data derived from sensor data characterizing the sub-systems.
An extended optical pulse stretcher is provided that combines confocal pulse stretchers in combination to produce, for example, 4 reflections, 4 reflections, 12 reflections, and 12 reflections per optical circuit configuration. The inclusion of the combination of different mirror separations and delay path lengths can result in very long pulse stretching, long optical delays, and minimal efficiency losses. Also, in the extended optical pulse stretcher, at least a beam splitter can be positioned relative to the center of curvature of the mirrors to “flatten” each of the circuits to enable the beam to propagate in the same plane (e.g., parallel to the floor). Also, the curvatures and sizes of the individual mirrors can be designed to position the beam splitter closer to one of the banks of mirrors to allow the optical pulse stretchers to properly fit in an allocated location in a laser system.
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
G02B 17/00 - Systems with reflecting surfaces, with or without refracting elements
G02B 27/14 - Beam splitting or combining systems operating by reflection only
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01S 3/225 - Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
65.
LATENT SPACE SYNCHRONIZATION OF MACHINE LEARNING MODELS FOR IN-DEVICE METROLOGY INFERENCE
Autoencoder models may be used in the field of lithography to estimate, infer or predict a parameter of interest (e.g., metrology metrics). An autoencoder model is trained to predict a parameter by training it with measurement data (e.g., pupil images) of a substrate obtained from a measurement tool (e.g., optical metrology tool). Disclosed are methods and systems for synchronizing two or more autoencoder models for in-device metrology. Synchronizing two autoencoder models may configure the encoders of both autoencoder models to map from different signal spaces (e.g., measurement data obtained from different machines) to the same latent space, and the decoders to map from the same latent space to each autoencoder's respective signal space. Synchronizing may be performed for various purposes, including matching a measurement performance of one tool with another tool, and configuring a model to adapt to measurement process changes (e.g., changes in characteristics of the tool) over time.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
66.
SUBSTRATE COMPRISING A TARGET ARRANGEMENT, ASSOCIATED PATTERNING DEVICE AND METROLOGY METHOD
Disclosed is a method of measuring a focus parameter from a focus target. and associated substrate and associated patterning device. The focus target comprises at least a first sub-target and a second sub-target, each having at least a periodic main feature, wherein a respective pitch and/or dimensional parameter of at least some sub-elements of the main feature are configured such that said first sub-target and second sub-target have a respective different best focus value; and wherein each said main feature is formed with a focus dependent center-of-mass and/or pitch. The method comprises obtaining a first measurement signal from said first sub-target and a second measurement signal from said second sub-target; determining a difference signal of said first measurement signal and second measurement signal; and determining said focus parameter from said difference signal.
G03F 1/44 - Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
67.
GENERATING AN ALIGNMENT SIGNAL WITHOUT DEDICATED ALIGNMENT STRUCTURES
Generating an alignment signal for alignment of features in a layer of a substrate as part of a semiconductor manufacturing process is described. The present systems and methods can be faster and/or generate more information than typical methods for generating alignment signals because they utilize one or more existing structures in a patterned semiconductor wafer instead of a dedicated alignment structure. A feature (not a dedicated alignment mark) of the patterned semiconductor wafer is continuously scanned, where the scanning includes: continuously irradiating the feature with radiation; and continuously detecting reflected radiation from the feature. The scanning is performed perpendicular to the feature, along one side of the feature, or along both sides of the feature.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
68.
LITHOGRAPHIC APPARATUS, ILLUMINATION SYSTEM, AND CONNECTION SEALING DEVICE WITH PROTECTIVE SHIELD
A lithographic apparatus includes an illumination system to illuminate a pattern of a patterning device and a projection system to project an image of the pattern onto a substrate. The illumination system includes a first and second enclosures, a scaling device, and a protective device. The first enclosure encloses a first environment and includes a first opening and first connection corresponding to the first opening. The second enclosure includes a second connection structure to couple to the first connection structure to prevent mixing of substances between the first environment and a second environment outside of the first and second enclosures. The sealing device is disposed between the first and second connection structures. The material of the sealing device is chemically reactive to the first environment. The protective device is disposed on the sealing device proximal to the first environment to shield the sealing device from the first environment.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
69.
AN OPTICAL SYSTEM IMPLEMENTED IN A SYSTEM FOR FAST OPTICAL INSPECTION OF TARGETS
A system includes optical devices, reflective devices, a movable reflective device, and a detector. The optical devices are disposed at a first plane and around a axis of the system and receive scattered radiation from targets. The reflective devices are disposed at at least a second plane and around the axis. Each of the reflective devices receives the scattered radiation from a corresponding one of the optical devices. The movable reflective device is disposed along the axis and receives the scattered radiation from each of the reflective devices. The detector receives the scattered radiation from the movable reflective device.
A method for determining distortion in an image based on a process model, comprising: determining an image transformation operation based on a relationship between a plurality of measurement locations in an image and locations corresponding to the plurality of measurement locations in a predicted image generated by a process model; and characterizing image distortion in the image based on the image transformation operation.
Disclosed is a computer implemented method of predicting a remaining useful lifetime of an apparatus or component thereof comprising: receiving high dimensional data corresponding to an operating parameter of the apparatus or component thereof; transforming the high dimensional data into health indicator data, comprising low dimensional data indicative of a health status of the apparatus or component thereof; determining temporal relations within the health indicator data to obtain health indicator trajectory data; receiving historical maintenance data of the apparatus or component thereof; determining a failure probability of the apparatus or component thereof based at least in part on the historical maintenance data and the health indicator trajectory data, and; predicting the remaining useful lifetime of the apparatus or component thereof based at least in part on the failure probability.
Described a method and system for determining a placement and geometry of a sub-resolution assist feature (SRAF) in an area proximate to a mask pattern to reduce sensitivity to an overlay between portions of the mask pattern on a substrate. The mask pattern corresponds to a target pattern to be printed on the substrate in two adjacent exposure fields. The geometry of the mask pattern is adjusted to reduce the sensitivity to the overlay by generating a first portion of the pattern with varying CD and a second portion of the pattern with varying CD for use in printing the target pattern on the substrate in the two adjacent exposure fields respectively.
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A system for a thermonuclear fusion reactor having an introducer configured to introduce a fuel pellet into a contained plasma is described. The system comprises one or more lasers for adjusting propulsion of the fuel pellet by laser ablation and a controller configured to operate in conjunction with the introducer and the one or more lasers to controllably propel the fuel pellet towards a target location in the contained plasma.. This contrasts with prior systems (e.g., where a fuel pellet simply follows the magnetic field gradient with the plasma) and may enhance plasma control for improved stability and thermonuclear fusion energy production, modulate a fusion rate and an amount of energy produced by the reactor, adjust plasma currents to alter magnetic fields and produce electricity by magnetic induction, and/or have other advantages alone or in combination with existing systems.
G21B 1/15 - Particle injectors for producing thermonuclear fusion reactions, e.g. pellet injectors
G21B 1/23 - Optical systems, e.g. for irradiating targets, for heating plasma or for plasma diagnostics
H05G 2/00 - Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G21B 1/05 - Thermonuclear fusion reactors with magnetic or electric plasma confinement
74.
SYSTEMS AND METHODS FOR HYBRID SAMPLING PLAN GENERATION AND ACCURATE DIE LOSS PROJECTION
Systems, methods, apparatuses, and non-transitory computer readable mediums for generating an inspection tool sampling plan. Systems, methods, apparatuses, and non-transitory computer readable mediums may include generating a static sampling plan to determine a baseline for inspection; generating a dynamic sampling plan to determine excursion events; applying the static sampling plan; and applying the dynamic sampling plan by triggering additional sampling when predicted defect probabilities exceed a threshold in an area of a sample with historically low defect probability.
H01L 21/66 - Testing or measuring during manufacture or treatment
G05B 19/18 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
75.
METHOD OF REDUCING CYCLIC ERROR EFFECTS IN A LITHOGRAPHIC PROCESS, PROJECTION SYSTEM AND LITHOGRAPHIC APPARATUS COMPRISING A PROJECTION SYSTEM
A method of reducing cyclic error effects in a lithographic process having a projection phase and an idle phase, the method including controlling in a first control loop a first position of a first module, the first module being a position controlled mirror of a projection system, the first control loop having a first bandwidth and including a first position measurement system having a first cyclic error, wherein controlling the first position includes continuously moving the first module at least during the projection phase, such that a first main frequency of the first cyclic error will be above the first bandwidth of the first control loop.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.
G06F 30/20 - Design optimisation, verification or simulation
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/66 - Testing or measuring during manufacture or treatment
A method of calibrating an illumination system for a lithographic system, the method comprising: applying a known misalignment to the illumination system; obtaining measured data representative of a measured illumination pupil generated by the illumination system; and determining an actual misalignment based on the measured data. The determining an actual misalignment may comprise: obtaining estimated data representative of an estimated illumination pupil generated by the illumination system including the known misalignment and calculating a difference between the estimated data and the measured data, wherein the calculated difference is representative of the actual misalignment.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
78.
PHOTOLITHOGRAPHY OBJECT STAGE AND METHOD FOR FORMING THE SAME
An object stage and method thereof having reduced mass for use in photolithography and comprises a support surface that is configured to support an object, a fin network comprising a plurality of fins that provide rigidity to the support surface, and a coating material provided on at least some of the fins to add stiffness to the fins.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A stable light source is described, which is configured for multi-output spectrally matched and equivalent intensity radiation. The source includes a first splitter configured to receive and split input radiation into first transmissive and reflective portions; second splitters configured to receive and further split each of the first transmissive and reflective portions into second transmissive and reflective portions; and combiners configured to combine the second transmissive and reflective portions into different outputs with mixed transmissive and reflective portions. The mixed transmissive and reflective portions are configured such that outputs together form the spectrally matched and equivalent intensity radiation. This may be used to calibrate highly accurate detectors, for example, and/or for other purposes. An integrating sphere may be included (e.g., instead of and/or in addition to the splitter(s) and combiner(s)).
A method of reducing non-uniform thermomechanical effects of a reticle in a lithographic process includes defining a non-uniformity map of the reticle, calibrating a reticle heating model based on the non-uniformity map, and reducing a non-uniformity of the reticle based on the calibrated reticle heating model. The non-uniformity map can include a transmission map, a reflectance map, a transparency map, a pattern density map, and/or a reflectivity map of the reticle. The non-uniformity can include a spatially varying absorption profile of the reticle. Advantageously the method can reduce and/or compensate for non-uniform thermomechanical effects of the reticle, account for non-uniform pattern density of the reticle, reduce uncertainties in the lithographic process, increase calibration accuracy and speed of the reticle heating model, avoid rework of substrates, decrease overlay errors, and increase throughput, yield, and accuracy of the lithographic process.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An alignment system includes a radiation source, a self-referencing interferometer, a spatial filter assembly, a measurement device, and a detection system. The radiation source produces one or more illumination beams, directs the one or more illumination beams toward an alignment target on a wafer. The self-referencing interferometer receives one or more diffraction beams and generates an alignment signal including diffraction sub-beams, wherein the diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and are spatially overlapped. The spatial filter assembly restores a depth of modulation of the alignment signal. The measurement device measures a light intensity measurement of the alignment signal. The detection system determines a position of the alignment target based on the light intensity measurement of the alignment signal.
Disclosed herein is a fuel system for a source of EUV radiation, the fuel system comprising: a container having an internal region for receiving solid fuel; at least one holding pin arranged to hold solid fuel in the internal region spaced apart from walls of the container; a first heating system arranged to heat the walls of the container; and a second heating system arranged to heat each holding pin.
Disclosed is an apparatus for and method of using local alignment position deviation parameters for alignment marks on a semiconductor wafer wherein the parameters are used to generate one or more values indicating a condition of the alignment marks, which values may be used to obtain an wafer grid model having an improved fit.
The present disclosure provides a computer implemented method for determining a mask pattern of a patterning device. The method comprises obtaining a continuous tone mask and a binary mask, from a first image corresponding to a target design associated with the mask pattern, and iteratively optimizing the first image by concurrently adjusting the continuous tone mask and the binary mask.
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
85.
METHOD AND SYSTEM OF DETERMINING FIELD-DEPENDENT ABERRATIONS
A method of determining field-dependent aberrations in an image field of an optical imaging system based on a measuring operation determining aberration data for a plurality of field points in the image field comprises the following steps: - defining a target grid comprising a plurality of target field points in the image field, wherein a target field point is a field point for which a level of aberration is to be determined; - defining a measuring grid comprising a first subset of the target field points comprising all field points for which a level of aberration is to be determined in a measuring operation; - measuring aberrations at all field points of the measuring grid to generate measured aberration data; - defining an auxiliary grid comprising a second subset of the target field points comprising selected target field points not included in the measuring grid for which a level of aberration is to be determined in an aberration data generating operation, wherein the aberration data generating operation is configured to generate aberration data for target field points of the auxiliary grit based on (iii) knowledge of the optical imaging system and (iv) potential system-specific sources of aberrations.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A charged-particle beam apparatus configured to direct a charged-particle beam onto a sample, the charged-particle beam apparatus comprising a detection system which comprises: a first detection surface configured to generate electrical signals in response to signal particles generated by the sample in response to the charged-particle beam; and a second detection surface configured to generate electrical signals in response to incident secondary particles or backscattered particles generated by the first detection surface in response to the signal particles, the second detection surface defining a second hole to enable the signal particles to pass to the first detection surface.
A method of image template matching for multiple process layers of, for example, semiconductor substrate with an adaptive weight map is described. An image template is provided with a weight map, which is adaptively updated based during template matching based on the position of the image template on the image. A method of template matching a grouped pattern or artifacts in a composed template is described, wherein the pattern comprises deemphasized areas weighted less than the image templates. A method of generating an image template based on a synthetic image is described. The synthetic image can be generated based on process and image modeling. A method of selecting a grouped pattern or artifacts and generating a composed template is described. A method of per layer image template matching is described.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
A projection unit for a level sensor, the projection unit including: a first light pipe having a first inlet configured to receive radiation from a source and a first outlet; and a second light pipe having a second inlet configured to receive the radiation from the first light pipe and a second outlet. The unit may include a lens device configured to receive radiation from the second outlet and to output radiation having a predetermined distribution of intensity and irradiance.
Methods and apparatus are disclosed for patterning a target layer by selectively removing material. In one arrangement, the target layer is irradiated with a patterned beam. The patterned beam generates a plasma in a plasma pattern that locally interacts with the target layer to define where material is to be removed from the target layer. A bias voltage is applied to the substrate during the irradiation to control a distribution of energies of ions of the plasma impinging on the target layer.
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Systems, methods, and media for determining a processing parameter associated with a lithography process. In some embodiments, image data of features on a substrate may be obtained, and the image data may be analyzed in Fourier space. Based on the analysis, an amplitude and a phase may be determined, and an overlay of the features may be determined based on the amplitude and the phase.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method of performing a lithographic performance qualification test. The method includes: obtaining one or more exposure layouts, each relating to exposure of multiple exposure fields on a substrate; performing a dummy exposure on a substrate including photoresist for each of the one or more exposure layouts, the dummy exposure using no exposure illumination or exposure illumination having an exposure energy below an exposure threshold of the photoresist; monitoring one or more exposure parameters of each dummy exposure to obtain exposure parameter data; and evaluating lithographic performance of each dummy exposure and/its corresponding exposure layout from the exposure parameter data respective to that dummy exposure.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
93.
MANUFACTURING A HOLLOW CORE PHOTONIC CRYSTAL FIBER
MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V (Germany)
Inventor
Lagler, Josef
Staab, Gordon
Bergler, Michael, Sebastian
Abstract
Disclosed is a method of manufacturing an optical fiber, the method comprising: providing a fiber manufacturing intermediate product, the fiber manufacturing intermediate product comprising: (i) a hollow core cane comprising a first jacket with a hollow inner structure, wherein a plurality of capillaries are fused to the first jacket within the hollow inner structure; and (ii) a second jacket around the hollow core cane; roughening an outer surface of the second jacket over a portion (310) of the second jacket; coupling an end of the fiber manufacturing intermediate product to a pressure connector (402); and drawing a hollow core photonic crystal fiber from the fiber manufacturing intermediate product.
The invention provides an elevation pin assembly for loading/unloading a substrate, the assembly comprising: - a plurality of support pins, the plurality of support pins being higher in number than 3; - an actuator assembly configured to cause a displacement of the plurality of support pins, and - a control unit configured to control the displacement of the plurality of pins to pre-shape the substrate while loading/unloading the substrate.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
95.
INSPECTION APPARATUS, LINEARLY MOVABLE BEAM DISPLACER, AND METHOD
An inspection apparatus includes a radiation source, an optical system, and a detector. The radiation source is configured to generate a beam of radiation. The optical system is configured to receive and direct the beam along an optical axis and toward a target so as to produce scattered radiation from the target. The optical system includes a beam displacer. The beam displacer includes two or more reflective surfaces. The beam displacer is configured to receive the beam along the optical axis, perform reflections of the beam so as to displace the optical axis of the beam, move linearly in at least a first dimension to shift the displaced optical axis, and preserve an optical property of the beam such that the optical property is invariant to the linear movement. The detector is configured to receive the scattered radiation and to generate a measurement signal based on the scattered radiation.
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G01N 21/956 - Inspecting patterns on the surface of objects
G02B 7/18 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors
G02B 7/182 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors for mirrors
The embodiments of the present disclosure provide a charged particle optical device for projecting charged particle beams towards a sample position, arranged in a grid. The device comprises: a beam limiting aperture array and strip arrays. In the beam limiting aperture array is defined a plurality of apertures so as to generate the grid of beams. The strip arrays are positioned along beam paths. The strip arrays extend across the path of the plurality of beams to operate on the charged particles that pass along the path between strips of the respective strip array to collimate the path of the beams. The orientation of the strips in the array of two different arrays along the beam path are different. The beam limiting aperture array, the strip arrays or both are configured to mitigate a characteristic of the grid that is induced by passage of the beams through the strip arrays.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
97.
HIGH-SPEED HIGH-VOLTAGE FULLY-DIFFERENTIAL POWER AMPLIFIER FOR BEAM DEFLECTION DRIVER
The present disclosure provides a deflector driver for driving a deflector of a charged-particle inspection apparatus. The deflector driver may comprise a fully-differential amplifier that is configured to generate fully-differential outputs of which absolute value is greater than 100V. Wherein the fully-differential outputs may enable a plurality of deflector electrodes of the deflector to influence a charged particle beam of the charged-particle inspection apparatus based on the fully-differential outputs.
MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V (Germany)
Inventor
Lagler, Josef
Bergler, Michael, Sebastian
Uebel, Patrick, Sebastian
Abstract
A method of manufacturing a preform for use in the manufacturing process of a hollow-core photonic crystal fiber, the method comprising: (i) providing an elongated preform jacket with a hollow inner structure, the elongated preform jacket having a first and second end; (ii) inserting a hollow capillary preform into the hollow inner structure such that the hollow capillary preform is in contact with the hollow inner structure at a contact position and protrudes out of the hollow inner structure at the first end and at the second end; (iii) at the first end, locally heating a protruding portion of the hollow capillary preform; (iv) bending the protruding portion around the first end of the preform jacket; and (v) applying additional heat to a portion of the hollow capillary preform that is bent around the elongated preform jacket to fuse it to an outer surface of the elongated preform jacket.
A module for a laser-produced plasma radiation source includes: first optics; second optics; and a reverse beam monitoring apparatus. The first optics are arranged to receive a first radiation beam having a first wavelength and a second radiation beam having a second wavelength and to direct the first and second radiation beams so as to form a combined radiation beam propagating along a common optical path toward the second optics. The second optics includes a polarizing beam splitter. The second optics are arranged to receive the combined radiation beam and to direct at least a first portion of the combined radiation beam towards a target region. The second optics are further arranged to receive a reflected portion of the first portion of the combined radiation beam and to direct the reflected portion towards the reverse beam monitoring apparatus. Associated methods are also disclosed.
A lithographic apparatus including: a patterning device; a first positioner to position the patterning device support; a substrate support; a second positioner to position the substrate support; and a projection system configured to project a radiation beam from a patterning device onto a substrate, wherein the patterning device support, the first positioner, the substrate support, and/or the second positioner has, during use, a plurality of superconductive coils that are configured to generate a magnetic field, wherein the plurality of superconductive coils are grouped in a plurality of separable and discrete modules which, when assembled, form the assembly, each module including a subset of one or more coils of the plurality of coils and including an electrical interface to provide electricity to the subset of one or more coils and a cooling interface to provide cooling for the superconductivity of the subset of one or more coils.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
