A semiconductor carrier is provided. The semiconductor carrier includes a base material, a carrier structure, and a first semiconductor element. The carrier structure is disposed on the base material, wherein the carrier structure has a plurality of contact protrusions arranged in a periodical configuration. The first semiconductor element is disposed on the carrier structure and in a configuration of contacting the plurality of contact protrusions, wherein the first surface of the first semiconductor element has a first surface area SA1, and a first contact area CA1 with the plurality of contact protrusions. The ratio CA1/SA1 satisfies the condition: 0.1≤CA1/SAI<1.
A light-emitting device includes a substrate, a first surface electrode, a second surface electrode, a first light-emitting element, a second light-emitting element, and a first conductive connector. The first surface electrode and the second surface electrode are disposed on the substrate. The first light-emitting element is disposed on the substrate and electrically connected to the first surface electrode, and has a first topmost surface. The second light-emitting element is disposed on the substrate and electrically connected to the second surface electrode, and has a second topmost surface. The first conductive connector has a metal stack and a third topmost surface, and electrically connects the first surface electrode and the first light-emitting element. The third topmost surface of the first conductive connector is not lower than the second topmost surface of the second light-emitting element.
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 20/831 - Electrodes characterised by their shape
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
A display device includes a wavelength-conversion module and a light-emitting module. The wavelength-conversion module includes a first wavelength-conversion layer, a second wavelength-conversion layer, and a conductive structure. The first wavelength-conversion layer has a first lower surface. The conductive structure has a first portion and a second portion which are connected to each other, and the first portion is disposed between the first wavelength-conversion layer and the second wavelength-conversion layer. The first portion has a second lower surface coplanar with the first lower surface. The light-emitting module is disposed over the wavelength-conversion module and exposes the second portion. The light-emitting module includes a first semiconductor layer, a first light-emitting layer, and a second light-emitting layer. The first light-emitting layer and the second light-emitting layer are disposed on the first semiconductor layer, the first light-emitting layer covers the first wavelength-conversion layer, and the second light-emitting layer covers the second wavelength-conversion layer.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
A semiconductor device includes a semiconductor stack, a stack structure and a covering layer. The semiconductor stack is stacked along a stacking direction and includes an active region and a sidewall, wherein an angle between the sidewall and a reference plane perpendicular to the stacking direction is between 60 degrees and 90 degrees. The stack structure covers the semiconductor stack and has a crack on the sidewall. In addition, the covering layer covers the stack structure, thereby the crack on the sidewall is covered by the covering layer.
H10H 20/854 - Encapsulations characterised by their material, e.g. epoxy or silicone resins
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/819 - Bodies characterised by their shape, e.g. curved or truncated substrates
H10H 20/841 - Reflective coatings, e.g. dielectric Bragg reflectors
A semiconductor test structure includes a carrier; a conductive layer disposed on the carrier and including a continuous surface with a first region and a second region; a first adhesive portion and a second adhesive portion disposed on the conductive layer in a configuration of covering the first region and exposing the second region; and a first semiconductor device and a second semiconductor device disposed on the first adhesive portion and the second adhesive portion, respectively, wherein the first semiconductor device includes a first lower electrode, a first semiconductor stack, and a first upper electrode, in a cross-sectional view, the first lower electrode faces the first adhesive portion, the first upper electrode faces away from the first adhesive portion.
A semiconductor structure includes a first surface, a second surface, a semiconductor portion, and a first penetrating portion. The second surface is opposite to the first surface. The first penetrating portion penetrates the semiconductor portion. The first penetrating portion has a first opening located on the first surface and a second opening located on the second surface. The first penetrating portion allows an ambient medium to penetrate the semiconductor portion through the first opening and the second opening.
A light-emitting device including: a substrate including a first side and a second side; a semiconductor stack on the substrate, including a first semiconductor layer with a first side and a second side, an active layer, and a second semiconductor layer, and in a top view of the light-emitting device, the semiconductor stack includes an outer peripheral region and an inner region surrounded by the outer peripheral region, and the outer peripheral region is uncovered by the second semiconductor layer; a first scribe line, located between the first side of the substrate and the first side of the first semiconductor layer; an insulation layer covering the first scribe line and the first side of the first semiconductor layer, including a plurality of first insulation layer outer openings located in the outer peripheral region; and a first electrode covering the plurality of first insulation layer outer openings. In a cross-sectional view, one of the first insulation layer outer openings do not extend to the first side of the first semiconductor layer.
A semiconductor device and a display device are provided. The semiconductor device includes an epitaxial structure, a first electrode and a second electrode. The epitaxial structure includes a first portion and a second portion adjacent to the first portion. The first portion includes a first semiconductor structure and an active region, and the first portion has a first upper surface and a first side surface. The second portion includes a second semiconductor structure and has a first bottom surface and a second side surface. The active region is located between the first semiconductor structure and the second semiconductor structure. The first electrode covers the first bottom surface. The second electrode covers the first upper surface. In a cross-sectional view, the first side surface is directly connected to the second side surface, the active region has a first maximum width, the second portion has a second maximum width, and a ratio of the first maximum width to the second maximum width is ranging from 0.9 to 1. In the cross-sectional view, a first imaginary line extending along the first lower surface and a second imaginary line extending along the first side surface define a first included angle, the first imaginary line and a third imaginary line extending along the second side surface define a second included angle, the first included angle is different from the second included angle.
H10H 20/841 - Reflective coatings, e.g. dielectric Bragg reflectors
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
A semiconductor device comprises a light-emitting layer comprising a first side and a second side opposite to each other; and a first electrode structure disposed on the first side, having a first conductivity type, and comprising a first conductive bump which comprises a ridge portion.
The present disclosure provides a semiconductor device including an epitaxial structure, a first pad, a first contact electrode and a first barrier structure. The epitaxial structure includes a first semiconductor structure, a second semiconductor structure, and an active structure located between the first semiconductor structure and the second semiconductor structure. The first pad is located on the second semiconductor structure. The first contact electrode is located between the second semiconductor structure and the first pad. The first barrier structure is located between the first contact electrode and the first pad and includes a first metal layer and a second metal layer. The first metal layer has a first reflectivity for a light with a wavelength ranging from 950 nm to 1200 nm, and the second metal layer has a second reflectivity for the light with the wavelength ranging from 950 nm to 1200 nm, and the second reflectivity is larger than the first reflectivity. The first metal layer includes a first thickness, the second metal layer includes a second thickness, and the first thickness is larger than the second thickness.
A semiconductor device includes a driving element, a light-emitting element, a light-sensing element, a cover layer, first electrical connecting layers, and second electrical connecting layers. The light-emitting element and the light-sensing element are arranged side by side on the driving element. The cover layer covers the light-emitting element, the light-sensing element, and the driving element. The first electrical connecting layers and the second electrical connecting layers are arranged between the cover layer and the driving element. The light-emitting element is connected to the driving element via the first electrical connecting layers and the light-sensing element is connected to the driving element via the second electrical connecting layers. The cover layer includes a first opening and a second opening. The first opening is arranged on the light-emitting element to expose the light-emitting element. The second opening is arranged on the light-sensing element to expose the light-sensing element.
A semiconductor device, includes: a semiconductor stack, including a top surface, a bottom surface and a side wall; and an insulating structure, covering the semiconductor stack; wherein: the side wall includes a first sub-side wall connected to the bottom surface; and the insulating structure covers the first sub-side wall and a portion of the insulating structure covering the first sub-side wall comprises a gradient thickness that gradually decreases toward the bottom surface.
A light-emitting diode package is provided. The light-emitting diode package includes a light-emitting diode chip, a wavelength conversion layer, a dielectric layer, a distributed Bragg reflector layer, a conductive component, and a reflective layer. The light-emitting diode chip includes a light-emitting surface and a plurality of side surfaces. The wavelength conversion layer is disposed on the light-emitting surface of the light-emitting diode chip, and the wavelength conversion layer includes a plurality of side surfaces. The dielectric layer covers the side surfaces of the light-emitting diode chip. The distributed Bragg reflector layer is disposed below the light-emitting diode chip. The conductive component is disposed below the distributed Bragg reflector layer and electrically connected to the light-emitting diode chip through the distributed Bragg reflector layer. The reflective layer is disposed on the side surfaces of the wavelength conversion layer.
A light-emitting module is provided. The light-emitting module includes a light source and a lens structure disposed on the light source. The lens structure has a first surface and a second surface. The second surface is opposite to the first surface and adjacent to the light source. The first surface includes a first recessed portion and a plurality of second recessed portions. The first recessed portion corresponds to the light source. The second recessed portions are located in the extending direction of the first recessed portion. The second surface has a reflective surface located between the first recessed portion and the second recessed portions.
F21V 13/04 - Combinations of only two kinds of elements the elements being reflectors and refractors
F21V 5/04 - Refractors for light sources of lens shape
F21Y 105/16 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array square or rectangular, e.g. for light panels
17.
LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
A light-emitting device, includes a substrate; a semiconductor stack formed on the substrate; a first current blocking patterned structure and a second current blocking patterned structure formed on the semiconductor stack and separated from each other; and a plurality of electrodes formed on the semiconductor stack and electrically connected to the semiconductor stack; wherein the first current blocking patterned structure is overlapped with one of the plurality of electrodes and the second current blocking patterned structure is not overlapped with the plurality of electrodes.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
H10H 20/831 - Electrodes characterised by their shape
H10H 20/84 - Coatings, e.g. passivation layers or antireflective coatings
18.
SEMICONDUCTOR STRUCTURES, LIGHT-EMITTING DEVICES, LIGHT-EMITTING PACKAGES AND LIGHT-EMITTING SYSTEMS
A semiconductor structure includes a first semiconductor stack, a tunnel junction structure and a second semiconductor stack. The first semiconductor stack includes a first first-type semiconductor layer, a first active region and a first second-type semiconductor layer. The first active region has a plurality of first recesses. The first second-type semiconductor layer conformally covers the first active region and has a plurality of second recesses corresponding to the first recesses. The tunnel junction structure conformally covers the first second-type semiconductor layer and has a plurality of third recesses corresponding to the second recesses. The second semiconductor stack is disposed on the tunnel junction structure and includes a second first-type semiconductor layer, a second active region and a second second-type semiconductor layer stacked in sequence from bottom to top. The second first-type semiconductor layer fills up the third recesses.
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Yenrich Technology Corporation (Taiwan, Province of China)
Ennostar Corporation (Taiwan, Province of China)
Inventor
Huang, Li-Yuan
Wang, Tzu-Hsiang
Pu, Chi-Chih
Lin, Ya-Wen
Li, Pei-Yu
Chiu, Hsiao-Pei
Abstract
A pixel package includes a base material, a circuit structure, light-emitting semiconductor elements, a non-light-emitting semiconductor element, and a light-transmitting adhesive layer. The base material has an upper surface, a lower surface, and a side surface. The circuit structure is buried in the base material and includes an first circuit layer exposed from the upper surface, bottom electrodes exposed from the lower surface, and a middle circuit layer between the upper circuit layer and the plurality of bottom electrodes and covered by the base material. The light-emitting semiconductor elements are on the upper surface and electrically connected to the circuit structure. The non-light-emitting semiconductor element is buried in the base material and directly connected to the middle circuit layer, and at least one outside surface is exposed. The light-transmitting adhesive layer covers the light-emitting semiconductor elements and is in direct contact with the base material.
A manufacturing method for a photoelectric module is provided, which includes the following steps. A temporary substrate, a first lens, and a second lens are provided, wherein the first lens and the second lens are embedded in the temporary substrate. A first photoelectric element is arranged on the first lens. A second photoelectric element is arranged on the second lens. An electrical connection structure is formed on the first and second photoelectric elements. The temporary substrate is removed to expose the first lens and the second lens.
H10F 55/255 - Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
A packaging structure is provided. The packaging structure includes a dielectric structure, a redistribution structure, a plurality of light-emitting elements, a color conversion layer, and a metal barrier wall. The redistribution structure is disposed in the dielectric structure. The plurality of light-emitting elements is disposed on the dielectric structure and electrically connected to the redistribution structure. The color conversion layer is disposed on the plurality of light-emitting elements. The metal barrier wall is disposed on the dielectric structure and surrounds the color conversion layer.
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
A packaging structure is provided. The packaging structure includes a dielectric layer, a redistribution layer, a plurality of light-emitting elements, a photodegradation prevention layer, and a cover layer. The redistribution layer is disposed on the dielectric layer. The plurality of light-emitting elements is disposed on the redistribution layer and electrically connected to the redistribution layer. The photodegradation prevention layer is disposed on the dielectric layer and surrounds the plurality of light-emitting elements. The cover layer is disposed on the plurality of light-emitting elements and the photodegradation prevention layer. The area of the photodegradation prevention layer accounts for at least 50% of the area of the cover layer.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
A packaging structure is provided. The packaging structure includes a first dielectric layer, a redistribution structure, a plurality of light-emitting elements, an integrated circuit element, and a cover layer. The first dielectric layer has a top surface and a side surface. The redistribution structure is disposed in the first dielectric layer. The plurality of light-emitting elements is disposed on the first dielectric layer. The integrated circuit element is disposed on the first dielectric layer and adjacent to the plurality of light-emitting elements. The cover layer is disposed on the plurality of light-emitting elements and the integrated circuit element. The cover layer surrounds the plurality of light-emitting elements and the integrated circuit element. The cover layer is in direct contact with the top surface and the side surface of the first dielectric layer.
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
A light source module is provided. The light source module includes a substrate for the product, a plurality of first light sources and a plurality of second light sources. The first light sources are disposed on the substrate for the product, wherein the first light sources provide a first light beam, and the first light beam has a first chromaticity. The second light sources are disposed on the substrate for the product, wherein the second light sources provide a second light beam, the second light beam has a second chromaticity, and there is a chromaticity difference (Rx, Ry) between the first chromaticity and the second chromaticity.
F21V 19/00 - Fastening of light sources or lamp holders
F21Y 105/16 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array square or rectangular, e.g. for light panels
F21Y 113/13 - Combination of light sources of different colours comprising an assembly of point-like light sources
A photo-detecting device includes a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, a light-absorbing layer located between the first semiconductor layer and the second semiconductor layer, and a first interface between the second semiconductor layer and the light-absorbing layer. The second semiconductor layer includes a first region having a first dopant and a second region surrounding the first region. The light-absorbing layer includes a third region having the first dopant and a fourth region surrounding the third region. The first dopant of the first region close to the first interface has a first doping concentration, and the first dopant of the third region close to the first interface has a second doping concentration larger than the first doping concentration.
H10F 77/45 - Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
H10F 30/21 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
H10F 55/00 - Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto
H10F 77/124 - Active materials comprising only Group III-V materials, e.g. GaAs
An optoelectronic semiconductor device includes a base, a semiconductor stack and a light-absorbing layer. The semiconductor stack includes a first semiconductor layer on the base, a second semiconductor layer on the first semiconductor layer, and a light absorbing layer between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer includes a modified region and an unmodified region surrounding the modified region. The bonding structure is between the first semiconductor layer and the base. The first electrode structure is disposed on and connected to the second semiconductor layer. A thickness of the second semiconductor layer is less than or equal to 50 nm.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
The present disclosure provides a semiconductor device including a first epitaxial stack and a first contact electrode. The first epitaxial stack includes a first semiconductor, a second semiconductor, and a first active region disposed between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a first capping layer having a first thickness. The second semiconductor structure includes a second capping layer having a second thickness larger than the first thickness. The first active region includes a light-emitting stack, a first confinement structure located between the light-emitting stack and the first capping layer, and a second confinement structure located between the light-emitting stack and the second capping layer. The first confinement structure has a third thickness, and the second confinement has a fourth thickness less than the third thickness. The first contact electrode is electrically connected to the first semiconductor structure.
H10H 20/84 - Coatings, e.g. passivation layers or antireflective coatings
H10H 20/816 - Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
A light detecting device includes a first semiconductor layer, an absorption layer located on the first semiconductor layer, a second semiconductor layer located on the absorption layer, a filter structure located on the second semiconductor layer, an opening formed in the filter structure and an electrode structure disposed on the filter structure. The electrode structure connects the second semiconductor layer through the opening. The filter structure includes a plurality of first layers and a plurality of second layers which are alternately stacked, and the plurality of the first layers includes an uppermost first layer with a first refractive index and one of the plurality of second layers has a second refractive index larger than the first refractive index. The uppermost first layer is located between the electrode structure and the plurality of second layers and directly contacts the electrode structure.
A light-emitting device includes a first nitride semiconductor structure; a stress relief structure on the first nitride semiconductor structure including a plurality of narrow band gap layers and a plurality of wide band gap layers alternately stacked, wherein one of the plurality of wide band gap layers includes a plurality of wide band gap sub-layers and one of the plurality of wide band gap sub-layers includes aluminum; an active structure on the stress relief structure including a plurality of quantum well layers and a plurality of barrier layers alternately stacked, wherein one of the plurality of barrier layers includes a plurality of barrier sub-layers and one of the plurality of barrier sub-layers includes aluminum, an aluminum composition of the wide band gap sub-layer is greater than or equal to that of the barrier sub-layer, and an average aluminum composition of the wide band gap layer is greater than that of the barrier layer; and an electron blocking structure on the active structure.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
F21K 9/232 - Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
H10H 20/814 - Bodies having reflecting means, e.g. semiconductor Bragg reflectors
H10H 20/815 - Bodies having stress relaxation structures, e.g. buffer layers
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
A light-emitting diode device includes light-emitting diodes, a storage module, a control module, a driving module, and a package structure. The light-emitting diodes emit different colors of light. The storage module pre-stores color coordinate reference information and brightness reference information corresponding to a current/voltage of the light-emitting diodes. The control module receives the color coordinate reference information and the brightness reference information corresponding to the light-emitting diodes, and uses the color coordinate reference information, the brightness reference information, the color coordinate requirement information, and the brightness requirement information according to a light mixing algorithm to generate a first control signal. The driving module generates a driving signal according to the first control signal to drive the light-emitting diodes to emit a light having a color coordinate and brightness that meet requirements. The package structure accommodates the light-emitting diodes, the storage module, the control module, and the driving module.
An LED chip configuration method is provided, comprising forming a plurality of LED chips from a wafer wherein the plurality of LED chips having the same color and different wavelengths; binning the plurality of LED chips into a first group having a minimum wavelength range, a second group having a first middle wavelength range, and a third group having a maximum wavelength range wherein the minimum wavelength range, the first middle wavelength range, and the maximum wavelength range are not overlapped with each other; providing a substrate; and disposing LED chips from the first group, the second group, and the third group on the substrate; wherein the disposed LED chips from different groups are arranged in a staggered manner.
H10H 29/34 - Active-matrix LED displays characterised by the geometry or arrangement of subpixels within a pixel, e.g. relative disposition of the RGB subpixels
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a first conductive structure electrically connecting to the semiconductor stack, a first insulative structure covering the first conductive structure, and a first electrode structure electrically connecting to the first conductive structure. The semiconductor stack includes a first portion having a first upper surface, and a second portion connecting to the first portion and having a second upper surface and a first side surface connecting the first upper surface and the second upper surface. The first conductive structure covers the first upper surface, the second upper surface and the first side surface. The first electrode structure locates on the first portion.
An inspection device includes a carrier, an input electrode, a metal layer and a contact electrode. The input electrode is disposed on the carrier. The metal layer includes a fixed portion and an extending portion. The fixed portion is disposed on the carrier, the fixed portion has one end connected to the input electrode, and has another end that extends in a direction far away from the carrier. The extending portion is electrically connected to the another end of the fixed portion, the extending portion is separated from the carrier by a spacing to form a buffer region. The contact electrode is disposed on the extending portion of the metal layer, and electrically connected to the extending portion of the metal layer. The contact electrode has a concave surface facing away from the carrier.
A semiconductor element is provided. The semiconductor element includes: a semiconductor stack including a mesa portion and a recessed portion; a contact layer formed on the mesa portion; an insulating layer formed on the semiconductor stack and the contact layer, wherein the insulating layer includes a first opening formed on the mesa portion; and an electrode layer formed on the insulating layer, wherein the electrode layer is electrically connected to the contact layer. In a plan view, the mesa portion includes a first centroid, the contact layer includes a second centroid, and the first opening includes a third centroid, and a distance between the first centroid and the third centroid is greater than a distance between the second centroid and the third centroid.
Some embodiments of the present disclosure discloses a method for transferring electronic devices. The method includes providing an electronic device array structure, a providing carrier, and a plurality of second electronic devices arranged on the providing carrier. Wherein the electronic device array structure includes a carrier and a flawed group arranged on the carrier. The flawed group includes a plurality of first electronic devices and a vacancy. A patterned light is formed to irradiate the providing carrier by using the electronic device array structure.
H10H 29/03 - Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A light-emitting diode (LED) package is provided, which includes a plurality of LED units, an encapsulant, and a first light guide. The encapsulant covers the LED units and has a recessed portion. The recessed portion is between the LED units, and the encapsulant has a plurality of side surfaces surrounding the LED units and the recessed portion. The first light guide is disposed in the recessed portion of the encapsulant, wherein the first light guide has a top portion and a bottom portion, with the top portion having a larger area than the bottom portion. The first light guide includes a plurality of reflective surfaces between the top portion and the bottom portion, and each reflective surface corresponds to a respective LED unit to reflect a portion of the light emitted from the LED units toward the side surfaces of the encapsulant.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
A semiconductor device includes a base, a semiconductor stack, a bonding structure, a contact structure, a conductive structure and a first through hole. The semiconductor stack includes a first semiconductor structure and a second semiconductor structure, and the first semiconductor structure locates between the second semiconductor structure and the base. The bonding structure is disposed between the base and the first semiconductor structure. The contact structure is disposed between the bonding structure and the first semiconductor structure, and is covered the contact structure. The first through hole penetrates the semiconductor stack and the contact structure to contact the conductive structure.
H10F 77/00 - Constructional details of devices covered by this subclass
H10F 19/40 - Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
H10F 77/124 - Active materials comprising only Group III-V materials, e.g. GaAs
H10F 77/42 - Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
42.
DISPLAY MODULE AND METHOD OF MANUFACTURING THE SAME
A pixel module includes a substrate, a first sub-pixel unit, and a second sub-pixel unit. The first sub-pixel unit is disposed on the substrate, and includes a first light-emitting unit, a second light-emitting unit, and a light-transmitting layer. The first light-emitting unit and the second light-emitting unit are connected in series through the light-transmitting layer and are located on the same side of the light-transmitting layer. The second sub-pixel unit is disposed on the substrate, and the first sub-pixel unit and the second sub-pixel unit can emit different color lights.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 29/02 - Manufacture or treatment using pick-and-place processes
H10H 29/853 - Encapsulations characterised by their shape
H10H 29/855 - Optical field-shaping means, e.g. lenses
43.
LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a semiconductor stack and an insulating structure. The semiconductor stack includes an upper surface, a bottom surface and a side surface. The side surface includes first and second sub-side surfaces. A first angle is formed between the first sub-side surface and the upper surface. The first angle is a right angle or an obtuse angle. The second sub-side surface is connected to the bottom surface and a second angle is formed between the second sub-side surface and the bottom surface. The second angle is an obtuse angle. The insulating structure covers the semiconductor stack and includes a first sub-insulating structure and a second sub-insulating structure. The first sub-insulating structure covers the upper surface and the first sub-side surface, and does not cover the second sub-side surface. The second sub-insulating structure covers the upper surface, the first sub-side surface and the second sub-side surface.
A semiconductor structure, a semiconductor unit, and a formation method thereof are provided. The semiconductor structure includes a underlying layer, a supporting member, and a semiconductor device. The underlying layer has a protruding portion. The supporting member is disposed on the underlying layer. The supporting member includes a bonding portion, a connecting portion, and a carrying portion. The bonding portion is connecting to the protruding portion of the underlying layer. The connecting portion is located next to the bonding portion. The carrying portion is located next to the connecting portion. The semiconductor device is disposed on the carrying portion and exposes the bonding portion and the connecting portion. There is a gap between the carrying portion of the supporting member and the underlying layer.
The present disclosure provides a semiconductor device. The semiconductor device includes an epitaxial stack including a first semiconductor structure and a second semiconductor structure; a first contact on the first semiconductor structure; a first pad on the first contact; a connector between the first contact and the first pad, and including a first side surface; a first metal bump on the first pad and having a second side surface surrounding the first side surface; and a passivation structure covering the first side surface and contacting the first metal bump.
A semiconductor device includes a circuit substrate, a light-emitting layer, a structure, and a light-emitting diode chip. The light-emitting layer is located on the circuit substrate and emits a first color light with a first wavelength range. The structure is disposed between the light-emitting layer and the circuit substrate. The structure emits a second color light with a second wavelength range. The light-emitting diode chip is located on the circuit substrate without overlapping the structure in a vertical direction. The light-emitting diode chip emits a third color light with a third wavelength range. The first wavelength range is between the second wavelength range and the third wavelength range.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H10D 86/40 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
H10D 86/60 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
H10H 20/814 - Bodies having reflecting means, e.g. semiconductor Bragg reflectors
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
A method for forming a pixel package is provided. The method for forming the pixel package includes the following steps: providing a first substrate; transferring a first LED chip and a second LED chip to the first substrate; forming a composite laminate between the first LED chip and the second LED chip; adhering a second substrate to a top surface of the composite laminate; removing the first substrate from back sides of the first LED chip, the second LED chip, and the composite laminate; forming a redistribution layer on the back sides of the first LED chip, the second LED chip, and the composite laminate; and removing the second substrate from the top surface of the composite laminate.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/00 - Details of semiconductor or other solid state devices
A wavelength conversion device and a manufacturing method thereof are provided. The wavelength conversion device includes a wavelength conversion module including a carrier, a first light-blocking layer, a second light-blocking layer, a filter layer, a wavelength conversion layer, and a protective layer. The carrier has a first surface and a second surface opposite the first surface. The first light-blocking layer is disposed on the first surface and has a first opening. The second light-blocking layer is disposed on the second surface and has a second opening. The filter layer is disposed on the second surface and in the second opening. The wavelength conversion layer is disposed on the filter layer. The protective layer is disposed on the second light-blocking layer. The width of the second opening of the second light-blocking layer is greater than the width of the first opening of the first light-blocking layer.
A semiconductor structure includes packaging structures and a substrate. Each packaging structure includes a light-transmitting layer, micro-LED chips, a first insulating layer, redistribution layers, a second insulating layer, and conductive pieces. The micro-LED chips are on the light-transmitting layer and include an electrode surface and a light-emitting surface facing the light-transmitting layer. The first insulating layer is disposed on the light-transmitting layer and surrounds the micro-LED chips. The redistribution layers are disposed on the first insulating layer and pass through the first insulating layer to be electrically connected to the electrode surfaces. The second insulating layer is disposed on the first insulating layer. The conductive pieces are disposed on the second insulating layer, pass through the second insulating layer to be electrically connected to the redistribution layers, and are between the substrate and the micro-LED chips.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 29/03 - Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
A lens structure is provided. The lens structure includes a body having an upper surface and a lower surface, wherein the lower surface is a plane. The plane has an X direction and a Y direction, and the X direction is orthogonal to the Y direction. The body includes a first part having a first protrusion extending along the Y direction and a second part having a second protrusion extending along the Y direction, wherein the second part is arranged in parallel with the first part along the X direction. There is a depression between the first protrusion and the second protrusion, and the depression extends along the Y direction.
G02B 3/02 - Simple or compound lenses with non-spherical faces
G02B 1/04 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of organic materials, e.g. plastics
An optoelectronic semiconductor component is provided. The optoelectronic semiconductor component includes a base, an electrical connection structure located on the base, a plurality of light-emitting chips located on the electrical connection structure, a plurality of wavelength converters located on the light-emitting chips, and a separation structure located on the electrical connection structure and covering the light-emitting chips and the wavelength converters. The base includes a base material and a plurality of conductor parts. The base material covers the conductor parts which penetrate the base material. The electrical connection structure includes an intermediate part and a plurality of metal parts The intermediate part covers the metal parts. A part of the conductor parts of the base extends into the electrical connection structure and are electrically connected to the metal parts of the electrical connection structure. The metal parts extend into the separation structure and are electrically connected to the light-emitting chips.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
An optical substrate includes a transparent matrix substrate, a reflective film, and a light-absorbing film. The transparent matrix substrate includes a first surface, a second surface, and openings. The openings are in the transparent matrix substrate. The openings include an opening sidewall connecting the first surface and the second surface. Each of the opening sidewalls includes a first portion and a second portion. The reflective film extends from the first surface and is attached to the first portion of each opening sidewall. The light-absorbing film is attached only to the second surface or attached to the second surface and further extending to the second portion of the opening sidewall.
A light-emitting device and a display device are provided. The light-emitting device includes a substrate, a light-emitting element, and a light-transmissive encapsulant. The light-emitting element is disposed on the substrate. The light-transmissive encapsulant is disposed on the substrate and surrounds the light-emitting element. The light-transmissive encapsulant has an upper surface and a bottom surface. The light-transmissive encapsulant includes a recessed portion and a surrounding portion. The recessed portion is located on the upper surface, directly above the light-emitting element. The recessed portion includes a bottom portion and a sidewall surrounding the bottom portion. The surrounding portion is located on the upper surface and connected to the sidewall of the recessed portion. The surrounding portion extends outward to the bottom surface. A ratio of a width of the bottom portion to a width of the light-emitting element is greater than or equal to 0.3.
A semiconductor element is provided. The semiconductor element includes a substrate, a light-emitting diode chip, and an encapsulating layer. The substrate includes a bottom portion and an island-shaped protrusion, wherein the island-shaped protrusion is disposed on the bottom portion. The light-emitting diode chip is disposed on the island-shaped protrusion. The encapsulating layer is disposed on the light-emitting diode chip. The side surface of the island-shaped protrusion has a first roughness. The top surface of the island-shaped protrusion has a second roughness. The first roughness is different from the second roughness.
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
A light-emitting module comprises N×M pixel modules arranged in a two-dimensional array wherein N and M are positive integers greater than or equal to 2. Each of the pixel modules comprises a plurality of pixels and a driving circuit for controlling the plurality of pixels. Each of the pixels comprises a plurality of light-emitting diodes. Each driving circuit is configured to apply a driving current to the light-emitting diodes in the corresponding pixel module. In a time period, a duty cycle of a working period of the driving current is 1/J, and in the working period, the driving current is J times an average driving current, and J is a positive integer equal to or greater than 2.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H10H 29/49 - Interconnections, e.g. wiring lines or terminals
A semiconductor device includes: a substrate; a semiconductor stack, disposed on the substrate and including: a first semiconductor layer, including a first part and a second part connected to the first part; an active region, disposed on the first part; and a second semiconductor layer, disposed on the active region; a first insulative layer disposed on the semiconductor stack and including a plurality of first opening; an adhesive layer, disposed on the first insulative layer and including a plurality of adhesive layer openings on the second semiconductor layer; a reflective conductive structure, disposed on the adhesive layer and filling into the plurality of adhesive openings; and a second insulative layer disposed on the reflective conductive structure and including a plurality of second openings. The plurality of second openings and the plurality of adhesive layer openings are arranged in a staggered manner.
A laser transfer structure and a method for forming the same are provided. The laser transfer structure includes a carrier, a release layer disposed on the carrier, a first chip disposed on the release layer, and a plurality of first photoresist structures disposed on the carrier and surrounding the first chip. A method for fabricating a display module is also provided.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B32B 43/00 - Operations specially adapted for layered products and not otherwise provided for, e.g. repairingApparatus therefor
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A semiconductor component and a semiconductor device are provided. The semiconductor component includes a carrier, a semiconductor element, and a protective layer. The carrier includes a substrate and a bracket structure. The bracket structure is disposed on the substrate. The semiconductor element is disposed on the carrier. The semiconductor element includes a semiconductor stack, a plurality of electrodes, and a roughened structure. The semiconductor stack has a first surface and a second surface, which are opposite each other. The electrodes are disposed on the first surface. The roughened structure is disposed on the second surface and is in direct contact with the bracket structure. The protective layer is disposed on the first surface and covers the electrodes.
A semiconductor device includes a base and a semiconductor stack located on the base. The semiconductor stack includes a first semiconductor structure adjacent to the base, a second semiconductor structure located on the first semiconductor structure, and a first active region located between the first semiconductor structure and the second semiconductor structure to emits a light with peak wavelength between 900 nm to 1000 nm. The first active region is undoped or unintentionally doped, and includes a first zone and a second zone located between the first zone and the first semiconductor structure. Each of the first zone and the second zone includes a pair of a first barrier layer and a first well layer, and the first well layer of the second zone has a thickness larger than that of the first well layer of the first zone.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
A semiconductor device is provided, which includes a base, a semiconductor stack located on the base, and a first semiconductor layer located on the semiconductor stack. The semiconductor stack includes a first semiconductor structure adjacent to the base, a second semiconductor structure located on the first semiconductor structure, and a first active region located between the first semiconductor structure and the second semiconductor structure. The first semiconductor layer is located on the second semiconductor structure, and includes Alx1Ga1−x1As, where 0.005≤x1<0.2. And the first semiconductor structure has a second thickness in a range of 3 μm to 8 μm. The semiconductor device outputs a first power corresponding to a light with a wavelength equal to or larger than 900 nm and less than 1100 nm, and a second power corresponding to a light with a wavelength less than 900 nm and larger than 700 nm. A ratio of the second power to a sum of the first power and the second power is equal to or less than 30%.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
A packaging structure and a formation method thereof are provided. The packaging structure includes a base, a semiconductor element, a wrap layer, a cap layer, and an electrical connecting structure. The wrap layer is disposed on the base, covers the semiconductor element, and exposes the top surface of the semiconductor element. The cap layer is disposed on the wrap layer and the semiconductor element and includes a first and a second part. The first part is in contact with the semiconductor element. The second part is in contact with the wrap layer, wherein in measurement results of Fourier transform infrared spectroscopy, the ratio between maximum intensities at wavenumbers of 1060 cm−1 to 1080 cm−1 and 780 cm−1 to 800 cm−1 of the second part is greater than 0.65. The electrical connecting structure passes through the base and the wrap layer to electrically connect to the semiconductor element.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
A light-emitting unit and a light-emitting device including the same are provided. The light-emitting unit includes a substrate, a light-emitting element, a light-guiding element, and a light-adjusting element. The light-emitting element is disposed on the substrate. The light-guiding element has a top surface. The light-guiding element is disposed on the light-emitting element. The light-guiding element includes a central portion, a first portion, and a second portion. The first portion has a first roughness. The second portion has a second roughness. The light-adjusting layer is disposed on the top surface of the light-guiding element. The light-adjusting layer is disposed on the central portion of the light-guiding element. The first roughness of the first portion is lower than the second roughness of the second portion.
A package structure is provided. The package structure includes multiple lead frames. Each lead frame has a recess and a die-bonding surface. The package structure also includes an insulating portion that covers the lead frames and fills the recesses of the lead frames. The insulating portion also fills the space between the lead frames. The insulating portion defines an accommodation space and has multiple openings that expose the die-bonding surfaces of the lead frames. The package structure further includes an optoelectronic element and an encapsulant. The optoelectronic element is disposed within the accommodation space and is electrically connected to the die-bonding surfaces of the lead frames, and the encapsulant is disposed within the accommodation space and covers the optoelectronic element.
A semiconductor device is provided. The semiconductor device includes a first semiconductor structure, a second semiconductor structure on the first semiconductor structure and an active structure between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a first waveguiding layer having a first band gap, and a first interlayer directly contacting the first waveguiding layer and having a first thickness and a second bandgap lager than the first band gap. The first thickness is 5 nm-35 nm.
H01S 5/11 - Comprising a photonic bandgap structure
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
H01S 5/32 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
A semiconductor device is provided, which includes an epitaxial structure, a first electrode, an insulating structure, a stop layer, and a second electrode. The epitaxial structure includes a first semiconductor layer, a second semiconductor layer and an active region located between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a first portion and a second portion. The first portion has a first side surface. The first electrode is located under the first semiconductor layer. The insulating structure distributed on the first side surface and having an opening which corresponds to the first electrode. The stop layer contacts the insulating structure distributed on the first side surface. The second electrode is located on the second semiconductor layer. The first portion has a first width, and the second portion has a second width less than the first width.
A light-modulating unit is provided. The light-modulating unit includes a light-modulating structure that has a light-emitting surface and a bottom surface that are opposite to each other. The light-modulating structure includes a housing cavity that extends from the bottom surface into the interior of the light-modulating structure. The light-modulating unit also includes a light-emitting element disposed in the housing cavity. The light-modulating unit further includes a light-reflecting array structure disposed on the light-emitting surface and directly above the light-emitting element. The light-reflecting array structure includes multiple grooves that form an m×n array, where m and n are positive integers greater than or equal to 2.
A method of manufacturing a light-emitting device includes: providing a substrate, providing a light-emitting structure containing a plurality of solid-state light sources disposed on the substrate, and providing a hybrid encapsulation film for encapsulating the light-emitting structure. The hybrid encapsulation film includes a B-stage light-transmitting layer having a front surface and a back surface and a plurality of first reflective layers disposed at intervals on the front surface of the B-stage light-transmitting layer. The method further includes: laminating the back surface of the B-stage light-transmitting layer of the hybrid encapsulation film toward the solid-state light sources of the light-emitting structure, so that the solid-state light sources are embedded in the B-stage light-transmitting layer and correspond to the positions of the first reflective layers, and performing a thermal process to cure the hybrid encapsulation film.
A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, an active region and a second semiconductor layer; an electrode structure, formed on and electrically connected with the semiconductor stack, including a pad electrode structure and a bonding electrode structure formed on the pad electrode structure; and a first insulating structure formed on the pad electrode structure; wherein the electrode structure comprises a first slit set, the first slit set comprises a first slit in the pad electrode structure and a second slit in the bonding electrode structure, wherein in a plan view, the second slit overlaps and corresponds to the first slit.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A semiconductor device is provided, which includes an epitaxial structure. The epitaxial structure includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure has a first conductivity type and includes a first intermediate layer and a first cladding layer. The second semiconductor structure has a second conductivity type. The active region is located between the first semiconductor structure and the second semiconductor structure. The first intermediate layer is located between the active region and the first cladding layer. The first intermediate layer includes P or As. The first intermediate layer and the first cladding layer include a first dopant. A maximum concentration of the first dopant in the first intermediate layer is greater than a maximum concentration of the first dopant in the first cladding layer.
A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and an extension electrode. The semiconductor stack includes a first semiconductor structure, an active structure, and a second semiconductor structure stacked in sequence along a vertical direction. The third semiconductor structure connects to the first semiconductor structure and includes a first part. The dielectric layer connects to the first semiconductor structure and includes an opening corresponding to the first part. The extension electrode connects to the second semiconductor structure without overlapping with the third semiconductor 10 structure in the vertical direction. The first part has a near electrode end and a far electrode end opposite to the near electrode end, and a distance from the far electrode end to the opening is smaller than a distance from the near electrode end to the opening.
A light-emitting device includes a carrier, a light-emitting unit disposed on the carrier, a reflective element arranged on the light-emitting unit, and an optical element arranged on the carrier and surrounding the light-emitting unit.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/814 - Bodies having reflecting means, e.g. semiconductor Bragg reflectors
H10H 20/831 - Electrodes characterised by their shape
The present disclosure provides an optoelectronic device including a base, a light-emitting chip, an interposer, a wavelength conversion member and a wall portion. The base includes a base portion and a conductive portion, and the conductive portion comprises a plurality of coupling surfaces. The base portion covers the conductive portion and exposes the coupling surfaces. The light-emitting chip and the interposer are provided on the base, and having a top surface. The interposer covers the light-emitting chip and exposes the top surface. The wavelength conversion member covers the light-emitting chip and the interposer, and the wavelength conversion member includes an emitting surface. The wall portion is provided on the base. The wall portion covers the interposer and the wavelength conversion member, and exposes the emitting surface of the wavelength conversion member. The emitting surface is parallel to the top surface, and perpendicular to the coupling surfaces.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
A light-emitting device is provided. The light-emitting device includes a substrate, a light-emitting element, a reflective layer, a first encapsulating layer, a wavelength conversion portion, and a second encapsulating layer. The light-emitting element is disposed on the substrate and has a side surface. The reflective layer is disposed on the side surface of the light-emitting element. The first encapsulating layer is disposed on the substrate, wherein the first encapsulating layer surrounds the light-emitting element and the reflective layer. The wavelength conversion portion is disposed on the light-emitting element. The second encapsulating layer is disposed on the first encapsulating layer, wherein the second encapsulating layer surrounds the wavelength conversion portion.
A semiconductor structure includes a substrate and a semiconductor stack. The substrate has a first surface and a second surface, the first surface has a first protruding unit and a second protruding unit which are arranged in a horizontal direction, and the second surface has a third protruding unit and a fourth protruding unit which are arranged in the horizontal direction. In a vertical direction perpendicular to the horizontal direction, the first protruding unit overlaps the third protruding unit, and the second protruding unit overlaps the fourth protruding unit. The semiconductor stack connects to the first surface. If the second surface is irradiated by a light beam which is parallel to the vertical direction, the light beam is capable of substantially forming a uniform energy distribution on the first surface.
H10H 20/819 - Bodies characterised by their shape, e.g. curved or truncated substrates
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
75.
SYSTEM AND METHOD OF PROCESSING SEMICONDUCTOR STRUCTURE
A method of processing a semiconductor structure includes: providing the semiconductor structure which includes a substrate and a semiconductor stack connected to a first surface of the substrate; and providing a light beam to pass through the substrate for irradiating the first surface to separate the substrate and the semiconductor stack. The first surface extends along a horizontal direction and has a first protruding unit and a second protruding unit which are arranged adjacent to each other. The first protruding unit has a top, and a first inclined surface and a second inclined surface which are located at two sides of the top. The light beam includes a first sub-beam arranged for perpendicularly irradiating the first inclined surface.
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
76.
SEMICONDUCTOR DEVICE ARRANGEMENT AND METHOD OF MANUFACTURING THE SAME
A semiconductor device arrangement includes a carrier, a semiconductor device located on the carrier and an adhesive portion between the carrier and the semiconductor device. The semiconductor device includes a semiconductor stack, a first electrode, a second electrode, a first electrical connection and a second electrical connection. The first electrode is located between the semiconductor stack and the first electrical connection, and both of the first electrical connection and the second electrical connection are arranged to face the carrier. The adhesive portion includes a first protruding portion and a second protruding portion. The first protruding portion and the second protruding portion are respectively connected with the first electrical connection and the second electrical connection. The uppermost surfaces of the first electrical connection and the second electrical connection are located at different elevations, and at least one of the first and second electrical connections is located below the semiconductor stack.
A light-emitting diode module includes a casing, a lead frame, a plurality of light-emitting diodes, a control circuit, a first external power supply, a second external power supply, a first power supply pin, and a second power supply pin. The lead frame is disposed in the casing, and the lead frame has a first surface and a second surface. The second surface is opposite to the first surface. The light-emitting diodes include a first light-emitting diode, a second light-emitting diode and a third light-emitting diode, which are disposed on the first surface of the lead frame. At least one of the first light-emitting diode, the second light-emitting diode and the third light-emitting diode is electrically connected to the first external power supply through the first power supply pin, and the control circuit is electrically connected to the second external power supply through the second power supply pin.
An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer, and a second semiconductor layer; a contact electrode formed on the second semiconductor layer; an insulating reflective structure covering the contact electrode and including a plurality of insulating reflective structure openings to expose the contact electrode; a metal reflective structure covering the plurality of insulating reflective structure openings to electrically connect to the contact electrode; and an insulating structure including one or more first insulating structure openings to expose the first semiconductor layer and one or more second insulating structure openings to expose the metal reflective structure.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A semiconductor device arrangement includes a carrier, an adhesive layer, several first semiconductor devices, and several second semiconductor devices. The carrier has an upper surface, and the adhesive layer is arranged on the upper surface. The several first semiconductor devices are arranged in a first region on the adhesive layer, the several second semiconductor devices are arranged in a second region on the adhesive layer, and the first region abuts the second region. Wherein, any two adjacent first semiconductor devices of the several first semiconductor devices are separated by a first distance, any one of the several first semiconductor devices and any one of the several second semiconductor devices, which are adjacent to each other, are separated by a second distance, and the first distance is larger than the second distance.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
A light-emitting device comprises a semiconductor stack emitting a light with a peak wavelength λ; and a light field adjustment layer formed on the semiconductor stack, wherein the light field adjustment layer comprises a plurality of first layers and a plurality of second layers alternately stacked on top of each other, the plurality of first layers each comprises a first optical thickness, and the plurality of second layers each comprises a second optical thickness.
An electronic device includes an electronic component module coupled to a substrate. The electronic component module includes a sub-mount, which includes a body having a top surface, a bottom surface, and a supporting surface. The supporting surface is located between the supporting surface and the bottom surface. A first conductive layer is disposed on the bottom surface and includes first conductive lines. A second conductive layer is disposed on the supporting surface, extending to the top surface, and includes second conductive lines. The second conductive lines on the supporting surface have a first pin layout, and the second conductive lines on the top surface have a second pin layout different from the first pin layout. The second pin layout matches the pin layout of first conductive lines on the bottom surface. An electronic component is coupled to the second conductive lines on the supporting surface.
A semiconductor device includes a semiconductor stack, including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad, adjacent to a first edge of the semiconductor device; a second electrode pad, adjacent to a second edge of the semiconductor device; and an insulating layer covering the semiconductor stack, including one or more first openings adjacent to the first edge and one or more second openings adjacent to the second edge, and wherein the one or more first openings and the one or more second openings expose the first semiconductor layer; wherein the one or more first openings includes a first maximum length, and the one or more second openings includes a second maximum length greater than the first maximum length.
H10H 20/853 - Encapsulations characterised by their shape
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A light-emitting device includes a first semiconductor layer; an active layer on the first semiconductor layer and having an upmost surface with a first width; and a second semiconductor layer on the active layer and having a bottommost surface with a second width less than the active layer.
H10H 20/831 - Electrodes characterised by their shape
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
H10H 20/818 - Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
H10H 20/821 - Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
H10H 20/832 - Electrodes characterised by their material
An LED driving device includes an LED load, a control module and a driving module. The LED load has a driving characteristic and a load energy. The control module provides a frame time and a first pulse width to calculate a total pulse number in the frame time. The control module generates a pulse intensity and a second pulse width according to the driving characteristic of the LED load. The control module generates a pulse density according to the load energy of the LED load. The driving module generates a driving signal to the LED load according to the pulse intensity, the second pulse width and the pulse density.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
A semiconductor device includes: a first light-emitting unit and a second light-emitting unit, wherein: the first light-emitting unit includes: a first lower semiconductor stack, including a first sub-sidewall; a first upper semiconductor stack, formed on the first lower semiconductor stack, including a second sub-sidewall; and a first sidewall, including the first sub-sidewall and the second sub-sidewall; wherein the first lower semiconductor stack includes a first upper surface not covered by the first upper semiconductor stack; the second light-emitting unit includes: a second lower semiconductor stack; a second upper semiconductor stack formed on the second lower semiconductor stack; wherein the second lower semiconductor stack includes a second upper surface not covered by the second upper semiconductor stack; a connecting electrode, formed on the first light-emitting unit and the second light-emitting unit and contacting the second upper surface to electrically connect the first light-emitting unit and the second light-emitting unit; and a first contact electrode, formed on the first upper surface and electrically connected to the first lower semiconductor stack, including a fist contact pad; wherein: the first sub-sidewall and the second sub-sidewall are directly connected to form a first slope; and in a top view, the second upper surface surrounds the second upper semiconductor stack.
A light-emitting device, includes: a substrate including: a base including a main surface and a plurality of mesas on a side of the main surface; and a plurality of protrusions separately disposed on the main surface, wherein the plurality of protrusions and the base include different materials and each one of the plurality of protrusions is disposed on a respective one of the plurality of mesas; and a semiconductor stack on the main surface; wherein in a top view, the main surface includes a peripheral area not covered by the semiconductor stack; and wherein a size of one of the plurality of protrusions in the peripheral area is smaller than a size of one of the plurality of protrusions under the semiconductor stack.
A light-emitting structure includes a substrate, a light-emitting device, a light reflective layer, and a reflective microstructure. The light-emitting device, which includes a top surface and side surfaces, is disposed on the substrate. The light reflective layer is disposed above the top surface of the light-emitting device to reflect a portion of the light being emitted from the top surface of the light-emitting device towards the side surfaces of the light-emitting device. The reflective microstructure is disposed on the substrate and surrounding the side surfaces of the light-emitting device to reflect the light being emitted from the side surfaces of the light-emitting device.
A light-emitting device and a display device are provided. The light-emitting device includes a substrate, a light-emitting array, and a plurality of first color conversion points. The light-emitting array is disposed on the substrate and includes a plurality of light-emitting units. Each one of the plurality of light-emitting units includes a LED die and an encapsulating portion. The LED die is disposed on the substrate. The encapsulating portion is disposed on the substrate and covers the LED die. The plurality of first color conversion points is disposed on the substrate and surrounds the light-emitting array. The plurality of first color conversion points includes a first wavelength conversion material.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 33/54 - Encapsulations having a particular shape
89.
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING COMPONENT
The present disclosure provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a first semiconductor contact layer, a semiconductor light-emitting stack, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure, a first electrode pad and a second electrode pad. The semiconductor light-emitting stack is located on the first semiconductor contact layer and comprising an active layer. The first-conductivity-type contact structure is located on the first semiconductor contact layer. The second semiconductor contact layer is located on the semiconductor light-emitting stack. The second-conductivity-type contact structure is located on the semiconductor light-emitting stack and electrically connected to the second semiconductor contact layer. The first electrode pad is located on the first-conductivity-type contact structure. The second electrode pad is located on the second-conductivity-type contact structure. The second-conductivity-type contact structure includes a bonding portion, an extension portion, and a connection portion.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 20/819 - Bodies characterised by their shape, e.g. curved or truncated substrates
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
H10H 20/831 - Electrodes characterised by their shape
H10H 20/841 - Reflective coatings, e.g. dielectric Bragg reflectors
An optical module is provided. The optical module includes a resin package, a lens and a light emitting element. The resin package has a receiving groove. The lens is disposed on the resin package, and the lens includes a light emitting surface, a light entering surface, and a central axis, wherein the light entering surface has an asymmetric structure. The light emitting element is disposed in the receiving groove, wherein the light emitting element is disposed deviated from the central axis of the lens.
G02B 3/02 - Simple or compound lenses with non-spherical faces
B60K 28/06 - Safety devices for propulsion-unit control, specially adapted for, or arranged in, vehicles, e.g. preventing fuel supply or ignition in the event of potentially dangerous conditions responsive to conditions relating to the driver responsive to incapacity of driver
B60W 40/08 - Estimation or calculation of driving parameters for road vehicle drive control systems not related to the control of a particular sub-unit related to drivers or passengers
A light source module is provided. The light source module includes a substrate, a light source and a packaging material. The light source is disposed on the substrate, wherein the light source comprises a top surface and a lateral surface. The packaging material is disposed on the substrate and covers the light source, wherein a recess is formed on the packaging material, and the recess corresponds to the top surface.
A semiconductor structure includes a first semiconductor stack having a first conductivity type, a second semiconductor stack having a second conductivity type, an active structure disposed between the first semiconductor stack and the second semiconductor stack, and an aluminum-containing cap layer in the active structure. The active structure includes a plurality of group III nitride barrier layers and a plurality of group III-nitride quantum well layers which are alternately stacked. The thickness of the group III-nitride barrier layers is ranged between 200 angstroms to 550 angstroms, and the aluminum-containing cap layer is disposed between the group III nitride quantum well layers and the group III nitride barrier layers, and the active structure has a wavelength of at least 600 nm.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
A laser module is provided. The laser module includes a substrate, a laser diode and a diffuser. The substrate has a surface and a base plane, wherein the base plane is parallel to the surface. The laser diode is disposed on the surface. The diffuser is disposed above the laser diode, wherein an included angle is formed between the diffuser and the base plane, and the included angle is greater than 5 degrees.
A micro light-emitting diode package structure is provided. The micro light-emitting diode package structure includes a plurality of micro light-emitting diode chips, a light-transmitting layer, a first insulating layer, a driving element, and a redistribution layer. The micro light-emitting diode chips are disposed side by side, wherein each micro light-emitting diode chip includes an electrode surface and a light-emitting surface opposite to each other. The light-transmitting layer covers the light-emitting surfaces of the micro light-emitting diode chips. The first insulating layer is disposed below the micro light-emitting diode chips. The driving element is disposed in the first insulating layer, wherein the driving element includes a plurality of electrodes, and the electrodes are on the side of the driving element away from the micro light-emitting diode chips. The redistribution layer electrically connects the electrode surfaces of the micro light-emitting diode chips and the electrodes of the driving element.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A semiconductor light-emitting device includes: a semiconductor stack, including; an active layer, formed on the semiconductor stack; a second semiconductor contact layer formed on the active layer; and a recessed region formed in the semiconductor stack and including a part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on semiconductor stack, including a first and second opening; a first electrode pad in the first opening and connected with the first semiconductor contact layer; and a second electrode pad in the second opening and connected to the transparent electrode. The semiconductor light-emitting device receives an operating current having ratio to the area of the transparent electrode that ranges from 10 mA/mm2 to 1000 mA/mm2. In a top view, the active layer surrounds the recessed region. The semiconductor stack and the transparent electrode layer each includes an edge adjacent to the recessed region.
H10H 20/831 - Electrodes characterised by their shape
H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
In order to maintain the white balance ratio of the mixed white light, a pixel unit is provided, which is composed of four sub-pixels of red, green, blue, and another green colors, and these sub-pixels are composed of a red LED element, a first green LED element, a blue LED element and a second green LED element. A control element is used to control the four sub-pixels of red, first green, blue and second green correspondingly by outputting control signals through the control channels. Base on the adjustment of the current, the brightness ratio of the above three colors is still maintained at the ratio of 3:6:1 of the white balance, and the ratio of the white balance of the white light after being mixed is also maintained.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
97.
LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes an upper surface; a plurality of exposed regions, formed in the semiconductor stack and exposing the upper surface; a lower protective layer, covering the exposed regions and the second semiconductor layer; a first reflective structure, formed on the second semiconductor layer and including a plurality of first openings on the second semiconductor layer; a second reflective structure, formed on the first reflective structure and electrically connected to the second semiconductor layer through the plurality of first openings; and an upper protective layer, formed on the second reflective structure; wherein the upper protective layer contacts and overlaps the lower protective layer on the exposed regions; wherein the first reflective structure and the second reflective structure are disposed between the lower protective layer and the upper protective layer.
H10H 20/841 - Reflective coatings, e.g. dielectric Bragg reflectors
H10H 20/814 - Bodies having reflecting means, e.g. semiconductor Bragg reflectors
H10H 20/831 - Electrodes characterised by their shape
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
An optical structure is provided. The optical structure includes a substrate, a light-emitting element, a glue layer, and a light-adjusting element. The light-emitting element is disposed on the substrate. The glue layer covers the light-emitting element. The light-adjusting element is disposed on the glue layer. Moreover, the refractive index of the glue layer is different from the refractive index of the light-adjusting element.
An embodiment of the present disclosure provides a semiconductor device. The semiconductor device has a first semiconductor structure; a second semiconductor structure on the first semiconductor structure and having a first aluminum content; a plurality of voids in the second semiconductor structure; an active structure between the first semiconductor structure and the second semiconductor structure; and a third semiconductor structure between the active structure and the second semiconductor structure, and having a second aluminum content. The first aluminum content is greater than the second aluminum content.
A semiconductor device arrangement structure includes a carrier, semiconductor devices, and an adhesive layer. The semiconductor devices are separately disposed on the carrier, and each of the semiconductor devices includes an electrode. The adhesive layer is disposed between the carrier and the semiconductor devices, and the semiconductor devices are attached to the adhesive layer which is a continuous distributed single-layered structure. The adhesive layer includes unselected regions and a selected region, wherein the unselected regions are covered by the semiconductor devices respectively, and the selected region is not covered by the semiconductor devices. The adhesive layer further includes an indentation disposed on a surface of the selected region, and in a cross-sectional view or a top view, the contour of the indentation is a scaled copy of a contour of and the electrode, and the indentation has a depth less than that of the electrode.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
