09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Photovoltaic cells and goods incorporating photovoltaic
cells, namely, photovoltaic solar modules, portable
photovoltaic-based power systems, and accessories therefore. Technical consultation, custom design, engineering and
development in the field of photovoltaic cells and goods
incorporating photovoltaic cells.
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Photovoltaic cells; goods incorporating photovoltaic cells, namely, photovoltaic thin films for use with consumer and industrial applications Technical consultation, custom design, engineering and development in the field of photovoltaic cells and goods incorporating photovoltaic cells
3.
MULTILAYER THIN-FILM BACK CONTACT SYSTEM FOR FLEXIBLE PHOTOVOLTAIC DEVICES ON POLYMER SUBSTRATES
A photovoltaic element includes a polymer substrate having opposing device and back sides, and having a coefficient of thermal expansion of at least 4 parts per million per degree Celsius but not exceeding 12 parts per million per degree Celsius. A metal structure is disposed on the device side of the polymer substrate, and the metal structure includes (a) a transition-metal-based layer disposed on the polymer substrate, (b) an aluminum-based barrier layer disposed on the transition-metal-based layer, and (c) a molybdenum-based cap layer disposed on the aluminum-based barrier layer. A CIGS photovoltaic structure is disposed on the molybdenum-based cap layer.
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.
Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers
A method of manufacture of I-III-VI-absorber photovoltaic cells involves sequential deposition of films comprising one or more of silver and copper, with one or more of aluminum indium and gallium, and one or more of sulfur, selenium, and tellurium, as compounds in multiple thin sublayers to form a composite absorber layer. In an embodiment, the method is adapted to roll-to-roll processing of photovoltaic cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer of substitutions such as tellurium near the base contact and silver near the heterojunction partner layer, or through gradations in indium and gallium content. In a particular embodiment, the graded composition is enriched in gallium at a base of the layer, and silver at the top of the layer. In an embodiment, each sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium, which react in-situ to form CIGS.
2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0336 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
H01L 21/385 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
8.
PHOTOVOLTAIC-BASED FULLY INTEGRATED PORTABLE POWER MANAGEMENT AND NETWORKING SYSTEM
A photovoltaic-based fully integrated portable power management and networking system includes a flexible photovoltaic module and an integrated power management, storage, and distribution and networking (MSDN) subsystem. The flexible photovoltaic module is capable of being disposed in at least a folded position and an unfolded position, and the MSDN subsystem is mechanically and electrically coupled to the flexible photovoltaic module. The MSDN subsystem includes an integrated networking subsystem for providing Internet connection to one or more devices, and the integrated networking subsystem is at least partially powered from the flexible photovoltaic module.
A photovoltaic-based fully integrated portable power system includes (1) an integrated power management, storage, and distribution (MSD) subsystem including a case having an opening, (2) a flexible photovoltaic module capable of being disposed in at least a folded position and an unfolded position, where a portion of the flexible photovoltaic module is disposed over the opening of the case, and (3) a mounting plate disposed on the flexible photovoltaic module and over the opening of the case, such that the portion of the flexible photovoltaic module is sandwiched between the MSD subsystem and the mounting plate.
A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.
H01L 29/94 - Metal-insulator-semiconductors, e.g. MOS
H01L 31/062 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the metal-insulator-semiconductor type
H01L 31/113 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor
H01L 31/119 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.
H01L 31/0256 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by the material
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
12.
Array of monolithically integrated thin film photovoltaic cells and associated methods
A process of forming an array of monolithic ally integrated thin film photo voltaic cells from a stack of thin film layers formed on an insulating substrate includes forming at least one cell isolation scribe in the stack of thin film layers. A second electrical contact layer isolation scribe is formed for each cell isolation scribe adjacent to a respective cell isolation scribe. A via scribe is formed in the stack of thin film layers between each cell isolation scribe and its respective second electrical contact layer isolation scribe. Insulating ink is disposed in each cell isolation scribe, and conductive ink is disposed in each via scribe to form a via. Conductive ink is also disposed along the top surface of the stack of thin film layers to form at least one conductive grid.
H01L 31/042 - PV modules or arrays of single PV cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/0465 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
09 - Scientific and electric apparatus and instruments
Goods & Services
(1) Portable equipment, namely a portable electric storage battery which receives power input from renewable and grid-based energy and provides storage, conditioning, and conversion of the power.
14.
SYSTEMS AND METHODS FOR THERMALLY MANAGING HIGH- TEMPERATURE PROCESSES ON TEMPERATURE SENSITIVE SUBSTRATES
A method for depositing one or more thin-film layers on a flexible polyimide substrate having opposing front and back outer surfaces includes the following steps: (a) heating the flexible polyimide substrate such that a temperature of the front outer surface of the flexible polyimide substrate is higher than a temperature of the back outer surface of the flexible polyimide substrate, and (b) depositing the one or more thin-film layers on the front outer surface of the flexible polyimide substrate. A deposition zone for executing the method includes (a) one of more physical vapor deposition sources adapted to deposit one or more metallic materials on the front outer surface of the substrate, and (b) one or more radiant zone boundary heaters.
A method for depositing one or more thin-film layers on a flexible polyimide substrate having opposing front and back outer surfaces includes the following steps: (a) heating the flexible polyimide substrate such that a temperature of the front outer surface of the flexible polyimide substrate is higher than a temperature of the back outer surface of the flexible polyimide substrate, and (b) depositing the one or more thin-film layers on the front outer surface of the flexible polyimide substrate. A deposition zone for executing the method includes (a) one of more physical vapor deposition sources adapted to deposit one or more metallic materials on the front outer surface of the substrate, and (b) one or more radiant zone boundary heaters.
A method for depositing one or more thin-film layers on a flexible polyimide substrate having opposing front and back outer surfaces includes the following steps: (a) heating the flexible polyimide substrate such that a temperature of the front outer surface of the flexible polyimide substrate is higher than a temperature of the back outer surface of the flexible polyimide substrate, and (b) depositing the one or more thin-film layers on the front outer surface of the flexible polyimide substrate. A deposition zone for executing the method includes (a) one of more physical vapor deposition sources adapted to deposit one or more metallic materials on the front outer surface of the substrate, and (b) one or more radiant zone boundary heaters.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C 14/20 - Metallic material, boron or silicon on organic substrates
C23C 14/54 - Controlling or regulating the coating process
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
17.
System for housing and powering a battery-operated device and associated methods
A reversible system for housing a battery-operated device includes a first case member and a second case member. The first case member includes a first alignment member and the second case member includes a second alignment member complimenting the first alignment member such that the orientation of the first case member to the second case member can be altered in at least two orientations. In certain embodiments, the reversible system additionally includes a photovoltaic module for powering the battery-operated device.
An integral system for housing and powering a battery-operated device includes an integral case adapted to house the battery-operated device, at least one photovoltaic assembly adapted to releasably attach to the integral case, and a first device interface connector adapted to electrically couple the battery-operated device to the integral case.
H04B 1/38 - Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
H01M 10/46 - Accumulators structurally combined with charging apparatus
19.
SYSTEM FOR HOUSING AND POWERING A BATTERY-OPERATED DEVICE AND ASSOCIATED METHODS
A reversible system for housing a battery-operated device includes a first case member and a second case member. The first case member includes a first alignment member and the second case member includes a second alignment member complimenting the first alignment member such that the orientation of the first case member to the second case member can be altered in at least two orientations. In certain embodiments, the reversible system additionally includes a photovoltaic module for powering the battery-operated device.
A photovoltaic assembly includes a flexible photovoltaic module, a flexible back barrier layer, and electrically conductive first and second flexible bus bars. The photovoltaic module includes opposing front and back outer surfaces and first and second electrical contacts on the front outer surface. The photovoltaic module is adapted to generate an electrical potential difference between the first and second electrical contacts in response to light incident on the front outer surface. The flexible back barrier layer is disposed on the back outer surface of the photovoltaic module. The electrically conductive first and second flexible bus bars are electrically coupled to the first and second electrical contacts, respectively, and the first and second flexible bus bars wrap around the flexible photovoltaic module and extend through the back barrier layer.
H01L 31/042 - PV modules or arrays of single PV cells
21.
Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers
A method of manufacture of I-III-VI-absorber photovoltaic cells involves sequential deposition of films comprising one or more of silver and copper, with one or more of aluminum indium and gallium, and one or more of sulfur, selenium, and tellurium, as compounds in multiple thin sublayers to form a composite absorber layer. In an embodiment, the method is adapted to roll-to-roll processing of photovoltaic cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer of substitutions such as tellurium near the base contact and silver near the heterojunction partner layer, or through gradations in indium and gallium content. In a particular embodiment, the graded composition is enriched in gallium at a base of the layer, and silver at the top of the layer. In an embodiment, each sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium, which react in-situ to form CIGS.
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H02N 6/00 - Generators in which light radiation is directly converted into electrical energy (solar cells or assemblies thereof H01L 25/00, H01L 31/00)
An assembly includes first and second sections and a subtractive hinge coupling the first and second sections. The subtractive hinges forms at least one aperture. A method for forming a flexible photovoltaic assembly includes the following steps: (1) disposing a plurality of photovoltaic devices on a flexible backing material, such that the plurality of photovoltaic devices are divided between at least first and second sections, and (2) forming at least one aperture in the flexible backing material between the first and second sections.
A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS.
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
29.
APPARATUS AND METHOD FOR HYBRID PHOTOVOLTAIC DEVICE HAVING MULTIPLE, STACKED, HETEROGENEOUS, SEMICONDUCTOR JUNCTIONS
A photovoltaic (PV) device has at least one lower PV cell on a substrate, the cell having a metallic back contact, and a I-III-VI absorber, and a transparent conductor layer. An upper PV cell is adhered to the lower PV cell, electrically in series to form a stack. The upper PV cell has III- V absorber and junction layers, the cells are adhered by transparent conductive adhesive having filler of conductive nanostructures or low temperature solder. The upper PV cell has no substrate. An embodiment has at least one shape of patterned conductor making contact to both a top of the upper and a back contact of the lower cells to couple them together in series. In an embodiment, a shape of patterned conductor draws current from excess area of the lower cell to the upper cell, in an alternative embodiment shapes of patterned conductor couples I-III-VI cells not underlying upper cells in series strings, a string being in parallel with at least one stack. In an embodiment, the bonding agent is a polymeric adhesive containing conductive nanostructures. In an embodiment the III-V absorber is grown on single crystal, substrate. A method for forming the device is described.
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers
A photovoltaic (PV) device has at least one lower PV cell on a substrate, the cell having a metallic back contact, and a I-III-VI absorber, and a transparent conductor layer. An upper PV cell is adhered to the lower PV cell, electrically in series to form a stack. The upper PV cell has III-V absorber and junction layers, the cells are adhered by transparent conductive adhesive having filler of conductive nanostructures or low temperature solder. The upper PV cell has no substrate. An embodiment has at least one shape of patterned conductor making contact to both a top of the upper and a back contact of the lower cells to couple them together in series. In an embodiment, a shape of patterned conductor draws current from excess area of the lower cell to the upper cell, in an alternative embodiment shapes of patterned conductor couples I-III-VI cells not underlying upper cells in series strings, a string being in parallel with at least one stack. In an embodiment, the bonding agent is a polymeric adhesive containing conductive nanostructures. In an embodiment the III-V absorber is grown on single crystal, substrate. A method for forming the device is described.
A process described herein provides an economical means for producing the oxide-based buffer layers using a wet chemical CSD process wherein the desired buffer layer material results from the evaporation of a chemical already containing the material in solution. Thus, no residual liquid chemical elements remain after deposition, and as there is no reaction to create the buffer material, as is the case with CdS CBD, the liquid elements in CSD have sufficiently long shelf life after mixing to as to improve manufacturability and further reduce waste. Furthermore, as there is no in-chamber reaction to create the buffer material solution, there are many options for delivering said solution to the CIGS absorber layer. Finally, as the oxide films for the CdS replacement have inherently better transmission in the blue spectrum, aggressive thinning of films to improve current generation is unnecessary.
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
A method of making a p-type Cadmium Selenide semiconductor material includes depositing an initial doped Cadmium Selenide layer, using a dopant that includes at least one element selected from the group consisting of Group IIIB elements and Group VIIB elements. The doped layer of Cadmium Selenide is then coated with a solution including a solvent and at least one of the following chlorides: chlorides of Group IA elements, chlorides of group IB elements, and chlorides of Group IIIB elements. The doped layer of Cadmium Selenide is then heated in an environment having an ambient temperature of between 300 and 500 degrees Celsius for a time between three and thirty minutes while at least partially preventing the evaporation of Selenium from the doped layer of Cadmium Selenide.
H01L 21/385 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
33.
HYBRID MULTI-JUNCTION PHOTOVOLTAIC CELLS AND ASSOCIATED METHODS
A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.
H01L 31/072 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
H01L 31/0336 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
34.
ARRAY OF MONOLITHICALLY INTEGRATED THIN FILM PHOTOVOLTAIC CELLS AND ASSOCIATED METHODS
A process of forming an array of monolithically integrated thin film photovoltaic cells from a stack of thin film layers formed on an insulating substrate includes forming at least one cell isolation scribe in the stack of thin film layers. A second electrical contact layer isolation scribe is formed for each cell isolation scribe adjacent to a respective cell isolation scribe. A via scribe is formed in the stack of thin film layers between each cell isolation scribe and its respective second electrical contact layer isolation scribe. Insulating ink is disposed in each cell isolation scribe, and conductive ink is disposed in each via scribe to form a via. Conductive ink is also disposed along the top surface of the stack of thin film layers to form at least one conductive grid.
A flexible photovoltaic module for converting light into an electric current includes a plurality of electrically interconnected flexible photovoltaic submodules monolithically integrated onto a common flexible substrate. Each photovoltaic submodule includes a plurality of electrically interconnected flexible thin-film photovoltaic cells monolithically integrated onto the flexible substrate. A flexible photovoltaic module for converting light into an electric current includes a backplane layer for supporting the photovoltaic module. A first pottant layer is disposed on the backplane layer, and a photovoltaic submodule assembly is disposed on the first pottant layer. The photovoltaic submodule assembly has at least one photovoltaic submodule, where each photovoltaic submodule includes a plurality of thin-film photovoltaic cells. A second pottant layer is disposed on the photovoltaic submodule assembly, and a upper laminate layer disposed on the second pottant layer.
A flexible photovoltaic module for converting light into electricity includes a plurality of photovoltaic cells, a wiring harness, and a connection subsystem. The plurality of photovoltaic cells are electrically interconnected to form a positive node for supplying current to a load and a negative node for receiving current from the load. The wiring harness includes a plurality of flexible electrical conductors, each electrical conductor being electrically isolated within the wiring harness. The connection subsystem is operable to selectively connect the positive node to one of the electrical conductors of the wiring harness. A plurality of flexible photovoltaic modules may be connected to form a photovoltaic array.
