Sixpoint Materials, Inc.

United States of America


Create a watch for Sixpoint Materials, Inc.
Total IP 60
Total IP Rank # 23,197
IP Activity Score 1.9/5.0    10
IP Activity Rank # 89,684
Dominant Nice Class Scientific and electric apparatu...

Patents

Trademarks

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Last Patent 2025 - Group iii nitride vertical photo...
First Patent 2009 - Method for producing group iii-n...
Last Trademark 2015 - GANKIBAN
First Trademark 2007 - SIXPOINT MATERIALS

Industry (Nice Classification)

Latest Inventions, Goods, Services

2024 Invention Group iii nitride vertical photoconductive semiconductor switch. The present invention discloses...
Invention Group iii nitride vertical photoconductive semiconductor switch. The present invention discloses ...
2023 Invention Gan trench mosfet and fabrication method. The present invention discloses a GaN trench MOSFET and...
Invention Gan trench mosfet and fabrication method. The present invention discloses a GaN trench MOSFET an...
2022 Invention Terahertz gunn oscillator using gallium nitride. −2. Particularly, usage of a GaN substrate made ...
Invention Terahertz gunn oscillator using gallium nitride. Disclosed is a terahertz oscillator utilizing a ...
2021 Invention Low-dislocation bulk gan crystal and method of fabricating same. GaN wafers and bulk crystal have...
2019 Invention Low-dislocation bulk gan crystal and method of fabricating same. GaN wafers and bulk crystal hav...
2017 Invention Electronic device using group iii nitride semiconductor and its fabrication method. The present i...
Invention Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication ...
Invention Methods for producing improved crystallinity group iii-nitride crystals from initial group iii-ni...
Invention Method for producing group iii nitride wafers and group iii nitride wafers. The present inventio...
2016 Invention High pressure reactor and method of growing group iii nitride crystals in supercritical ammonia. ...
Invention Seed selection and growth methods for reduced-crack group iii nitride bulk crystals. In one insta...
2015 Invention Group iii nitride substrates and their fabrication method. Group III nitride substrate having a f...
Invention Group iii nitride crystals, their fabrication method, and method of fabricating bulk group iii ni...
G/S Electronic devices and materials, namely, semiconductor wafers for use in the manufacture of sem...
G/S Electronic devices and materials, namely, semiconductor wafers for use in the manufacture of semi...
Invention Method of growing group iii nitride crystals using high pressure vessel. Present invention discl...
Invention High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitri...
Invention Substrates for growing group iii nitride crystals and their fabrication method. In one instance, ...
Invention Group iii nitride bulk crystals and their fabrication method. In one instance, the invention prov...
Invention High pressure reactor for supercritical ammonia and method for producing crystalline group iii ni...
Invention Group iii nitride bulk crystals and fabrication method. Bulk crystal of group III nitride having ...
2014 Invention Reactor design for growing group iii nitride crystals and method of growing group iii nitride cry...
Invention An electronic device using group iii nitride semiconductor and its fabrication method and an epit...
Invention Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride. The present inve...
2013 Invention Method of growing group iii nitride crystals. The present invention provides a method of growing ...
Invention Group iii nitride wafer and its production method. The present invention discloses a group III ni...
Invention Group iii nitride wafers and fabrication method and testing method. The invention provides, in on...
Invention A bismuth-doped semi-insulating group iii nitride wafer and its production method. The present in...
Invention Composite substrate of gallium nitride and metal oxide. The present invention discloses a novel c...
2012 Invention Method for testing group iii-nitride wafers and group iii-nitride wafers with test data. The pres...
Invention Ultracapacitors with electrodes containing transition metal nitride. The present invention disclo...
Invention Synthesis method of transition metal nitride and transition metal nitride. The present invention ...
2008 G/S Electronic devices and materials, namely semiconductor wafers and ingots for use in the manufact...