Pakal Technologies, Inc.

United States of America


Create a watch for Pakal Technologies, Inc.
Total IP 42
Total IP Rank # 34,055
IP Activity Score 2.3/5.0    27
IP Activity Rank # 28,915
Dominant Nice Class Scientific and electric apparatu...

Patents

Trademarks

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Last Patent 2025 - Insulated turn-off device with r...
First Patent 2007 - Insulated gate type thyristor
Last Trademark 2021 - PAKAL TECHNOLOGIES
First Trademark 2021 - PAKAL TECHNOLOGIES

Industry (Nice Classification)

Latest Inventions, Goods, Services

2025 Invention Insulated turn-off device with reduced sensitivity to variations in trench depth. In a trench-ga...
Invention Mos-gated trench device having shallow gate trenches and deep isolation trenches. A trenched, ve...
2024 Invention Insulated trench gate with multiple layers form improved performance of semiconductor devices. T...
Invention Trench-gated switch with epitaxial p-body layer having higher doped top portion. In a vertical s...
2023 Invention Insulated gate turn-off device with short channel pmos transistor. An insulated gate turn-off (I...
Invention Insulated gate power device with epitaxially grown substrate layers. A method of forming a layer...
2022 Invention Vertical insulated gate power switch with isolated base contact regions. In a vertical power devi...
Invention Etch stop layer for injecting carriers into drift layer for a vertical power device. A sacrificia...
Invention Anti-parallel diode formed using damaged crystal structure in a vertical power device. After the ...
2021 Invention Npnp layered mos-gated trench device having lowered operating voltage. An npnp layered switch is ...
Invention Mos-gated trench device using low mask count and simplified processing. A trenched, vertical MOS...
Invention Trench gate power switch with doped regions to induce breakdown at selected areas. A power devic...
Invention Insulated trench gates with dopants implanted through gate oxide. In an insulated trench gate dev...
Invention Insulated trench gates with multiple layers for improved performance of semiconductor devices. Tr...
Invention Insulated gate power device with independently controlled segments. A design technique is disclos...
G/S Semiconductor power elements
2020 Invention Cell layouts for mos-gated devices for improved forward voltage. An insulated gate turn-off (IGTO...
Invention Insulated gate turn-off device with designated breakdown areas between gate trenches. An insulate...
Invention Lateral insulated gate turn-off device with induced emitter. A lateral insulated gate turn-off de...
2019 Invention Cellular insulated gate power device with edge design to prevent failure near edge. A high power ...
Invention Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base formed using epit...
Invention Enhancements to cell layout and fabrication techniques for mos-gated devices. An insulated gate t...
Invention Vertical bidirectional insulated gate turn-off device. A vertical bidirectional insulated gate tu...
2018 Invention Insulated gate power devices with reduced carrier injection in termination area. A high power ve...
Invention Insulated gate turn-off device having low capacitance and low saturation current. An insulated ga...
2017 Invention Insulated gate turn-off device with turn-off transistor. An insulated gate turn-off (IGTO) device...
Invention Insulated gate turn-off device with turn-off schottky-barrier mosfet. An insulated gate turn-off ...
Invention Insulated gate turn-off device with hole injector for faster turn off. An insulated gate turn-off...
Invention Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base. An insulated gat...
2016 Invention Insulated gate power devices with reduced carrier injection in termination area. A high power ver...
Invention Insulated gate power device using a mosfet for turning off. An insulated gate turn-off (IGTO) dev...
2014 Invention Lateral insulated gate turn-off devices. A lateral insulated gate turn-off (IGTO) device includes...
Invention Vertical insulated-gate turn-off device having a planar gate. An insulated gate turn-off (IGTO) d...
2013 Invention Integrating a trench-gated thyristor with a trench-gated rectifier. An integrated trench-MOS-cont...
Invention Dual depth trench-gated mos-controlled thyristor with well-defined turn-on characteristics. An in...
Invention Active edge structures providing uniform current flow in insulated gate turn-off thyristors. An i...
2012 Invention Systems, devices, and methods with integrable fet-controlled lateral thyristors. Methods and syst...
Invention Systems and methods integrating trench-gated thyristor with trench-gated rectifier. An integrated...
Invention Mct device with base-width-determined latching and non-latching states. Methods and systems for a...
2007 Invention Insulated gate type thyristor. An insulated gate type thyristor includes: a first current termina...