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2024
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Invention
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Slew rate protection circuit.
A power integrated circuit comprising at least one III-nitride hig... |
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Invention
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Semiconductor switch comprising a short-circuit detection circuit. A semiconductor switch compris... |
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Invention
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Semiconductor switch. A semiconductor switch comprising a first main terminal, a second main term... |
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Invention
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Semiconductor switch.
A semiconductor switch comprising a high-electron-mobility transistor (HEM... |
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2023
|
Invention
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Integrated circuit comprising a hotspot detection circuit.
An integrated circuit comprising: a I... |
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Invention
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Semiconductor switch comprising a short-circuit detection circuit.
A semiconductor switch compri... |
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Invention
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Semiconductor switch.
A semiconductor switch comprising a first main terminal, a second main ter... |
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Invention
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Isolation of a power hemt from other circuits.
A III-nitride semiconductor based heterojunction ... |
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Invention
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Power semiconductor device comprising a silicon substrate.
A III-nitride power semiconductor dev... |
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Invention
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Power semiconductor device comprising a wide bandgap substrate.
A power device comprising a subs... |
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Invention
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Manufacturing methods for a power semiconductor device.
A method of making a power device, the m... |
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2022
|
Invention
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Power device with current sense.
According to a first aspect of the disclosure, there is provide... |
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Invention
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Mixed material power devices and driver circuits. A power integrated circuit comprising: a hetero... |
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Invention
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Current sensing in power semiconductor devices.
An III-nitride power semiconductor based heteroj... |
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Invention
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Stand-by circuit.
A III-nitride power semiconductor based heterojunction device comprising a sub... |
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Invention
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Power semiconductor device with an auxiliary gate structure. A heterojunction device having at le... |
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Invention
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Iii-v semiconductor device with integrated power transistor and start-up circuit. We disclose a I... |
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Invention
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Edge detection circuit. The present disclosure relates to an edge detection circuit configured to... |
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Invention
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Heterojunction based half bridge. We describe a heterojunction based half bridge apparatus formed... |
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Invention
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Iii-nitride power semiconductor based heterojunction diode.
We describe a smart high voltage/pow... |
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Invention
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Iii-nitride power semiconductor based heterojunction device. An integrated circuit is provided wh... |
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2021
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G/S
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Integrated circuit chips; microprocessors; semiconductor
devices; semiconductor chips; semicondu... |
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G/S
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Integrated circuit chips; microprocessors; semiconductor devices being electronic semiconductors,... |
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G/S
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Integrated circuit chips; microprocessors; semiconductor devices; semiconductor chips; semiconduc... |
|
|
Invention
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Power semiconductor device with an auxiliary gate structure. Power semiconductor devices in GaN t... |
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|
Invention
|
Iii-v semiconductor device.
A heterojunction device, includes a substrate (4); a Ill-nitride sem... |
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|
Invention
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Iii-v semiconductor device. A heterojunction device, includes a substrate (4); a Ill-nitride semi... |
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2020
|
Invention
|
Power semiconductor device with an auxiliary gate structure. The disclosure relates to a III-nitr... |
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|
Invention
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Power semiconductor device with a series connection of two devices. A device includes a heterojun... |
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|
Invention
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Iii-v semiconductor device with integrated power transistor and start-up circuit. An Ill-nitride ... |
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|
Invention
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Iii-v semiconductor device with integrated protection functions. We disclose a Ill-nitride semico... |
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|
Invention
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Iii-v semiconductor device. A heterojunction device, includes a substrate; a III-nitride semicond... |
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2019
|
Invention
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Gallium nitride transistor. A heterojunction power device includes a substrate; a III-nitride sem... |
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Invention
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Iii-v depletion mode semiconductor device. We disclose herein a depletion mode III-nitride semico... |
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|
Invention
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Iii-v semiconductor device with integrated power transistor and start-up circuit. A III-nitride s... |
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|
Invention
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Iii-v semiconductor device with integrated protection functions. We disclose a III-nitride semico... |
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Invention
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Thermal fluid flow sensor. We disclose herewith a heterostructure-based sensor comprising a subst... |
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2018
|
Invention
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Power semiconductor device with an auxiliary gate structure. The disclosure relates to power semi... |
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Invention
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Infra-red devices. We disclose herewith a heterostructure-based infra-red (IR) device comprising ... |
