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2009
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Invention
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Bonded intermediate substrate and method of making same. In a first embodiment, a method comprise... |
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2008
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Invention
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Bonded intermediate substrate and method of making same.
A method includes growing a first epita... |
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Invention
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Multi-junction solar cells. Solar cell structures including multiple sub-cells that incorporate d... |
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Invention
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Photovoltaics on silicon. Structures including crystalline material disposed in openings defined ... |
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2007
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Invention
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Semiconductor structures with structural homogeneity.
Semiconductor structures are formed with s... |
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Invention
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Distributed feedback lasers formed via aspect ratio trapping.
Structures including dielectric di... |
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Invention
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Light-emitter-based devices with lattice-mismatched semiconductor structures. Some aspects for th... |
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Invention
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Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures. Structu... |
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Invention
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Tri-gate field-effect transistors formed by aspect ratio trapping. Semiconductor structures inclu... |
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Invention
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Aspect ratio trapping for mixed signal applications. Structures and methods for their formation i... |
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Invention
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Aspect ratio trapping for mixed signal applications.
Structures and methods for their formation ... |
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Invention
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Defect reduction using aspect ratio trapping. Lattice-mismatched epitaxial films formed proximate... |
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Invention
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Lattice-mismatched semiconductor structures and related methods for device fabrication. Lattice-m... |
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2006
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Invention
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Control of strain in device layers by selective relaxation and prevention of relaxation. The bene... |
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Invention
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Lattice-mismatched semiconductor structures on insulators and their fabrication methods. Monolith... |
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Invention
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Solutions integrated circuit integration of alternative active area materials. Methods of forming... |
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Invention
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Material systems for dielectrics and metal electrodes and methods for formation thereof. A method... |
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Invention
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Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related... |
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Invention
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Lattice-mismatched semiconductor structures with reduced dislocation defect densities related met... |
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Invention
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Method of fabricating cmos inverters and integrated circuits utilizing strained surface channel m... |
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Invention
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Methods for forming double gate strained-semiconductor-on-insulator device structures.
The benef... |
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Invention
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Methods for forming structures including strained-semiconductor-on-insulator devices.
The benefi... |
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Invention
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Double gate strained-semiconductor-on-insulator device structures.
The benefits of strained semi... |
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Invention
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Methods for forming strained-semiconductor-on-insulator bipolar device structures.
The benefits ... |
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Invention
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Strained-semiconductor-on-insulator bipolar device structures.
The benefits of strained semicond... |
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2005
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Invention
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Lattice-mismatched semiconductor structures employing seed layers and related fabrication methods... |
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Invention
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Methods of fabricating strained-channel fet having a dopant supply region.
A buried channel FET ... |
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Invention
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Hybrid semiconductor-on-insulator and fin-field-effect transistor structures and related methods.... |
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Invention
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Methods for integrating lattice-mismatched semiconductor structure on insulators.
Monolithic lat... |
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Invention
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Material systems for dielectrics and metal electrodes.
A structure having a dielectric layer tha... |
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Invention
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Enhancement of p-type metal-oxide-semiconductor field effect transistors.
A structure includes a... |
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2004
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Invention
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Hybrid semiconductor-on-insulator structures and related methods.
Semiconductor-on-insulator str... |
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Invention
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Method of producing high quality relaxed silicon germanium layers. A method for minimizing partic... |
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Invention
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Method of selective removal of sige alloys. A method is disclosed of forming buried channel devic... |
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Invention
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Shallow trench isolation process. A structure including a transistor and a trench structure, with... |
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Invention
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Structures with planar strained layers. A structure including a compressively strained semiconduc... |
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Invention
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Semiconductor structures with structural homogeneity. Semiconductor structures are formed with se... |
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2003
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Invention
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Methods for preserving strained semiconductor layers during oxide layer formation. Oxidation meth... |
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Invention
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Gate material for semiconductor device fabrication. In forming an electronic device, a semiconduc... |
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Invention
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Back-biasing to populate strained layer quantum wells. Transistors including a buried channel lay... |
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Invention
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Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy. A semicondu... |
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Invention
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Semiconductor heterostructures having reduced dislocation pile-ups and related methods. Dislocati... |
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Invention
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Selective placement of dislocation arrays. Misfit dislocations are selectively placed in layers f... |
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Invention
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Cmos inverter and integrated circuits utilizing strained silicon surface channel mosfets. A CMOS ... |
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Invention
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Sige gate electrodes on sige substrates and methods of making the same. A semiconductor device an... |
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Invention
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Growing source and drain elements by selecive epitaxy. Methods for fabricating facetless semicond... |
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Invention
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Strained-semiconductor-on-insulator device structures. The benefits of strained semiconductors ar... |
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Invention
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Semiconductor devices having strained dual channel layers. A semiconductor structure includes a s... |
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Invention
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Cmos transistors with differentially strained channels of different thickness. A semiconductor st... |
