|
2024
|
Invention
|
Solder ball. 55Sn and a second phase mainly composed of AuSn, and thereby the occurrence of uneve... |
|
2023
|
Invention
|
Al connection material. Provided is an Al connection material that has excellent temperature cycl... |
|
|
Invention
|
Al connecting material. Provided is an Al connecting material that can prevent occurrence of inte... |
|
|
Invention
|
Aluminum connecting material. Provided is an aluminum connecting material that ensures excellent ... |
|
|
Invention
|
Al connection material. The present invention provides an Al connection material which achieves e... |
|
|
Invention
|
Al connection material. Provided is an Al connection material which can suppress generation of in... |
|
|
Invention
|
Al alloy bonding wire. The present invention provides an Al bonding wire which achieves excellent... |
|
|
Invention
|
Bonding wire. Provided is an alloy-coated Cu bonding wire comprising: a core material made of Cu ... |
|
|
Invention
|
Bonding wire for semiconductor devices. 0-100-100-100-100-100-10 is less than or equal to 80 atom %. |
|
2022
|
Invention
|
Bonding wire for semiconductor devices. Au at a surface of the wire is from 10 atomic % to 85 ato... |
|
|
Invention
|
Bonding wire for semiconductor device. PdNiPdNiPdNiPdNiAuAu of Au on the surface of the wire is 1... |
|
|
Invention
|
Copper alloy bonding wire for semiconductor devices.
In a copper alloy bonding wire for semicond... |
|
|
Invention
|
Bonding wire for semiconductor devices. NiPdNiPdPd (% by mass) of Pd in the entirety of the wire ... |
|
|
Invention
|
Bonding wire for semiconductor devices. PdNiPdNiNi (% by atom) of Ni at all the measurement point... |
|
|
Invention
|
Bonding wire for semiconductor device. PdNiPdNiNi (at%) for all measurement points in the claddin... |
|
|
Invention
|
Bonding wire for semiconductor device. NiPdNiPdPd (mass%) relative to the whole wire is 0.02–0.75... |
|
|
Invention
|
Bonding wire for semiconductor devices.
The bonding wire for semiconductor devices includes a co... |
|
|
Invention
|
Bonding wire for semiconductor devices. the total number of measurement points in the coating lay... |
|
|
Invention
|
Semiconductor device bonding wire. AuNiAuNiNi (mass%) with respect to the entirety of the wire is... |
|
|
Invention
|
Bonding wire for semiconductor device. PdNiPdNiNi (at%) of Ni with respect to all the measurement... |
|
|
Invention
|
Bonding wire for semiconductor device. NiPdNiPdPd (mass%) of Pd with respect to the wire overall ... |
|
|
Invention
|
Bonding wire for semiconductor devices.
To provide a novel Cu bonding wire that achieves a favor... |
|
|
Invention
|
Bonding wire for semiconductor devices.
There is provided a novel Cu bonding wire that achieves ... |
|
|
Invention
|
Bonding wire for semiconductor devices. (ii) a concentration of Ag relative to the entire wire is... |
|
|
Invention
|
Bonding wire for semiconductor device. AuNiAuNiNi (mass%) of Ni with respect to the wire overall ... |
|
|
Invention
|
Bonding wire for semiconductor device. NiPdNiPdPd (mass%) in terms of the entire wire being 0.02 ... |
|
|
Invention
|
Bonding wire for semiconductor devices. PdNi PdNiNi (% by atom) of Ni at all measurement points o... |
|
|
Invention
|
Ai bonding wire for semiconductor devices.
To provide an Al bonding wire for semiconductor devic... |
|
|
Invention
|
Ai wiring material.
There is provided an Al wiring material which can achieve sufficient bond re... |
|
|
Invention
|
Ai wiring material.
There is provided a novel Al wiring material that achieves both of a suppres... |
|
|
Invention
|
Al bonding wire for semiconductor devices.
To provide an Al bonding wire exhibiting a favorable ... |
|
|
Invention
|
Al wiring material. 1h1s1h1s2h2s2s2h2h (Hv) (embodiment 2). |
|
|
Invention
|
Al bonding wire for semiconductor devices. The present invention provides an Al bonding wire for ... |
|
|
Invention
|
Al bonding wire for semiconductor devices. Provided is an Al bonding wire for semiconductor devic... |
|
|
Invention
|
Al wiring material. Provided is an Al wiring material with which the joined reliability of a join... |
|
2021
|
Invention
|
Al wiring material.
There is provided a novel Al wiring material that achieves a favorable high-... |
|
|
Invention
|
Ag alloy bonding wire for semiconductor devices and semiconductor device.
There is provided an A... |
|
|
Invention
|
Bonding wire for semiconductor devices.
There is provided a bonding wire for semiconductor devic... |
|
|
Invention
|
Copper bonding wire.
There is provided a copper bonding wire that exhibits a favorable bondabili... |
|
2020
|
Invention
|
Copper bonding wire for semiconductor devices and semiconductor device.
There is provided a copp... |
|
|
Invention
|
Ag alloy bonding wire for semiconductor device. An object of the present invention is to provide ... |
|
|
Invention
|
Al wiring material.
There is provided an Al wiring material which suppresses a chip crack and ac... |
|
|
Invention
|
Junction structure, method for manufacturing junction structure, and solder ball. Provided is a j... |
|
|
Invention
|
Al bonding wire.
There is provided an Al bonding wire which can achieve a sufficient bonding rel... |
|
|
Invention
|
Al bonding wire. There is provided an Al bonding wire which can provide a sufficient bonding reli... |
|
|
Invention
|
Bonding wire. There is provided a metal-coated Al bonding wire which can provide a sufficient bon... |
