A device for moving an object including a substrate through an open side of a processing station of a processing apparatus including a support, placeable at the processing station. The device includes a carrier, guided for movement relative to the support along a path predominantly directed in parallel to a reference axis in a reference co-ordinate system. The device includes a device for controlling movement of the carrier and driving the movement in an opposite direction along the path. The device includes a component for holding the object and a suspension mechanism with which the holding component is connected to the carrier. The suspension mechanism is arranged to guide movement of the holding component relative to the carrier along a holding component path. The device is arranged to drive the movement of the holding component along the holding component path. The holding component path is predominantly directed parallel to the reference axis.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
B05C 3/132 - Appareillages dans lesquels un ouvrage est mis en contact avec une grande quantité de liquide ou autre matériau fluide l'ouvrage étant immergé dans le liquide ou autre matériau fluide pour traiter un ouvrage de longueur indéfinie supporté par des transporteurs
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
3.
TIN PLATING BATH AND A METHOD FOR DEPOSITING TIN OR TIN ALLOY ONTO A SURFACE OF A SUBSTRATE
The present invention concerns a tin plating bath comprising tin ions; titanium ions as reducing agent suitable to reduce tin ions to metallic tin; and at least one compound selected from the group consisting sulfites, dithionites, thiosulfates, tetrathionates, polythionates, disulfites, sulfides, disulfide, polysulfide, elemental sulfur or mixtures thereof. The present invention further discloses a method of depositing tin or a tin alloy onto a surface of a substrate. The tin plating bath is particularly suitable to be used in the electronics and semiconductor industry.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
C23C 18/52 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique en utilisant des agents réducteurs pour le revêtement avec des matériaux métalliques non prévus par un seul des groupes
4.
A METHOD FOR ACTIVATING A SURFACE OF A NON-CONDUCTIVE OR CARBON-FIBRES CONTAINING SUBSTRATE FOR METALLIZATION
Method for activating a surface of a non-conductive or carbon-fibres containing substrate for metallization, the method including:
(a) providing said substrate,
(b) providing an aqueous, palladium-free activation composition comprising
(i) a first species of dissolved transition metal ions and additionally metal particles thereof,
(ii) at least one complexing agent,
(iii) permanently or temporarily at least one reducing agent,
(iv) optionally one or more second species of dissolved metal ions different from the first species,
(c) contacting the substrate with said activation composition such that a transition metal or a transition metal alloy is deposited on the surface of said substrate and an activated surface for metallization is obtained.
The present invention relates to a method for increasing adhesion strength between a surface of a metal, a metal alloy or a metal oxide and a surface of an organic material comprising as a main step contacting of at least one section of said metal, metal alloy or metal oxide with a specific azole silane compound, a specific azole silane oligomer, or a mixture comprising said compound and/or said oligomer. Furthermore, the present invention relates to a use of said specific azole silane compound, said specific azole silane oligomer, or said mixture in a method for increasing adhesion strength between a surface of a metal, a metal alloy or a metal oxide and a surface of an organic material.
C09J 4/00 - Adhésifs à base de composés non macromoléculaires organiques ayant au moins une liaison non saturée carbone-carbone polymérisable
B32B 7/12 - Liaison entre couches utilisant des adhésifs interposés ou des matériaux interposés ayant des propriétés adhésives
B32B 15/08 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
B32B 15/20 - Produits stratifiés composés essentiellement de métal comportant de l'aluminium ou du cuivre
C07F 7/18 - Composés comportant une ou plusieurs liaisons C—Si ainsi qu'une ou plusieurs liaisons C—O—Si
H05K 3/38 - Amélioration de l'adhérence entre le substrat isolant et le métal
6.
METHOD FOR OBTAINING INFORMATION ABOUT A LAYER OF AN ORGANIC SOLDERABILITY PRESERVATIVE ON A PRINTED CIRCUIT BOARD
A method for obtaining information about a layer of an organic solderability preservative on a printed circuit board, the method including
Providing or producing a printed circuit board (16) having a copper layer (18) covering a part of an area of the printed circuit board (16),
Providing a fluorescence measuring system (10),
the method including following steps
a) Obtaining (S2) information about the location of the openings (21) on the printed circuit board (16),
b) Selecting (S3) at least one of the openings (21), thereby obtaining at least one selected opening,
c) Moving (S4) the radiation source (11) and the printed circuit board (16) relatively to each other,
d) Detecting (S5) the fluorescent radiation (23).
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
7.
Membrane anode system for electrolytic zinc-nickel alloy deposition
The present invention is related to a membrane anode system for electrolytic zinc-nickel alloy deposition, a method for electrolytic deposition of a zinc-nickel alloy layer on a substrate to be treated using a membrane anode system, and the use of a membrane anode system for acid or alkaline electrolytic deposition of a zinc-nickel alloy layer on a substrate to be treated by such a method.
The present invention is related to an aqueous post treatment composition for providing a post treatment layer on at least a part of a passivation layer, which is covering at least a part of a zinc layer being on at least a part of an iron containing substrate, characterized in that the aqueous post treatment composition comprises at least one chromium (III) ion source and at least one compound containing the chemical element silicon; wherein a molar ratio of silicon versus chromium is given in said composition, with the proviso that said molar ratio is ranging from 2600:1 to 1:1 for the zinc layer obtained by an electrolytic acid zinc deposition process; or that said molar ratio is ranging from 5200:1 to 1:1 for the zinc layer obtained by an electrolytic alkaline zinc deposition process.
C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et
C09K 15/02 - Compositions anti-oxydantesCompositions inhibant les modifications chimiques contenant des composés inorganiques
C23C 22/02 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux au moyen de solutions non aqueuses
Galvanic nickel or nickel alloy electroplating bath for depositing a semi-bright nickel or semi-bright nickel alloy coating in which the electroplating bath includes at least one compound having the general formula (1) and/or a salt thereof
wherein the electroplating bath further comprises at least one acetylenic compound and chloral hydrate.
solid trivalent chromium formate is dissolved in a separated partial volume taken from the aqueous deposition bath to obtain said dissolved trivalent chromium formate for step (d).
The invention relates to an aqueous alkaline pre-treatment solution for use prior to deposition of a palladium activation layer on a substrate in manufacturing an article with an integrated circuit and a method and use thereof, wherein the solution comprises:
at least one hydroxycarboxylic acid or salt thereof according to the general formula (I)
The invention relates to an aqueous alkaline pre-treatment solution for use prior to deposition of a palladium activation layer on a substrate in manufacturing an article with an integrated circuit and a method and use thereof, wherein the solution comprises:
at least one hydroxycarboxylic acid or salt thereof according to the general formula (I)
[RCH2—(RCH)n—COO−]m Mm+ (I)
The invention relates to an aqueous alkaline pre-treatment solution for use prior to deposition of a palladium activation layer on a substrate in manufacturing an article with an integrated circuit and a method and use thereof, wherein the solution comprises:
at least one hydroxycarboxylic acid or salt thereof according to the general formula (I)
[RCH2—(RCH)n—COO−]m Mm+ (I)
wherein n is integer from 2 to 4 and m is 1 or 2,
R is independently H or OH with proviso that at least one R is OH, and wherein Mm+ with m: 1 is hydrogen, ammonium or alkali metal; or Mm+ with m: 2 is earth alkali metal,
at least one polyoxyethylene sorbitan fatty acid ester,
at least one sulphonated fatty acid or a salt thereof.
An end effector for clamping a slab formed substrate (2) having a rim section (5) that is arranged at least approximately and at least partially in a substrate main plane comprises at least a pressing device (10) providing at least a pressing area (11), and at least a support device (20) providing at least a support area (21). The end effector (1) is configured, in a clamped state of the substrate (2), to clamp the substrate (2) at a first surface (3) by a pressing area (11) of a pressing device (10) and at a second surface (4) that is, in regard to the first surface (3), arranged at the opposite side of the substrate (2) by a support area (21) of a support device (20). The end effector comprises a guide (15) for guiding the pressing device (10) relative to the support device (20).
PROCESSING APPARATUS, SYSTEM AND METHOD FOR CONVEYING THERETHROUGH PARTS TO BE TREATED AND DEVICE FOR INTERCONNECTING A FIRST LINE AND A SECOND LINE OF THE SYSTEM
A device for interconnecting a first line (1a) and a second line (1b) of an overhead conveying system for conveying parts to be treated through a processing apparatus by means of at least one product carrier (7) comprising a transporter (19) and a part depending downwards from the transporter (19), in use, the transporter (19) comprising at least one runner (36,37) supported on at least one track (10a,b) comprises a main support structure (47). The device further comprises a movable support structure (48), at least indirectly supported by and movable relative to the main support structure (47) between at least a first position and a second position. The movable support structure (48) comprises at least one track segment (50a,b) for supporting at least one runner (36,37) of a transporter (19) in a support direction (z). Each track segment (50a,b) is alignable with a respective track (10a,b) of the first line (1a) in the first position and with a respective track (10a,b) of the second line (1b) in the second position such that an end of the track segment (50a,b) adjoins an end of the aligned track (10a,b) to allow a runner (36,37) to cross over between the aligned track (10a,b) and track segment (50a,b). The movement between the first position and the second position comprises a rotation about an axis (54) parallel to the support direction (z) and a translation with at least a component in axial direction. The at least one track segments(50a,b) comprise at least two track segments (50a,b), spaced apart in lateral direction. The movable support structure (48) defines a space for receiving at least part of a product carrier (7). The space is open at a top between the spaced-apart track segments (50a,b) and at opposite ends in longitudinal direction.
B61J 1/08 - Plaques tournantesButées d'arrêt incorporées pour relier entre elles des voies inclinées ou des voies à des niveaux différents
B65G 49/04 - Systèmes transporteurs caractérisés par leur utilisation à des fins particulières, non prévus ailleurs pour transporter des pièces à usiner dans des bains de liquide les pièces à usiner étant immergées et retirées par déplacement selon le sens vertical
The invention relates to aqueous acidic plating baths for electrodeposition of copper and copper alloys in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises copper ions, at least one acid and an ureylene polymer. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.
An electroless nickel or cobalt plating solution, comprising - nickel ions or cobalt ions, - Ti3+ ions as reducing agent for reducing said nickel ions and cobalt ions, - at least one accelerator selected from the group consisting of sulfites, dithionites, thiosulfates, tetrathionates, polythionates, disulfites, sulfides, disulfide, polysulfide, elemental sulfur and mixtures thereof; and - one or more than one complexing agent, wherein the pH value of the plating solution is from 5 to 10.5.
C23C 18/34 - Revêtement avec l'un des métaux fer, cobalt ou nickelRevêtement avec des mélanges de phosphore ou de bore et de l'un de ces métaux en utilisant des agents réducteurs
16.
AN AQUEOUS BASIC ETCHING COMPOSITION FOR THE TREATMENT OF SURFACES OF METAL SUBSTRATES
The present invention is directed to an aqueous basic etching composition for the treatment of surfaces of metal substrates, the composition comprising: (a) functionalized urea, biuret and guanidine derivatives and/or salts thereof selected from the group comprising compounds having formulae (I) and (II) and/or salts thereof, wherein X and Y are independently selected from the group comprising oxygen, NRR' and NR5, wherein R, R' and R5are independently selected from the group comprising R114144 alkyl optionally comprise at least one substituent selected as OR6, wherein R614 4 alkyl, wherein X and Y can be identical or different; R1and R2are independently selected from the group comprising hydrogen, alkyl compounds, amines, and nitrogen-comprising heteroaromatic compounds, wherein R1and R2can be identical or different, with the proviso that R1cannot be hydrogen, and with the proviso that in compounds having formula (I) R1 cannot be hydrogen or alkyl compound if X is oxygen; m is an integer from 1 to 4, preferably 3; and n is an integer from 0 to 8, preferably 2 to 4; wherein m and n can be identical or different; (b) an oxidizing agent for oxidizing the metals of the metal surface to be treated; and wherein the aqueous basic etching composition comprises a pH from 7.1 to 14.
C23C 22/34 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux au moyen de solutions aqueuses au moyen de solutions aqueuses acides d'un pH < 6 contenant des fluorures ou des fluorures complexes
C23C 22/40 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux au moyen de solutions aqueuses au moyen de solutions aqueuses acides d'un pH < 6 contenant des molybdates, des tungstates ou des vanadates
C23C 22/46 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux au moyen de solutions aqueuses au moyen de solutions aqueuses acides d'un pH < 6 contenant des oxalates
C23F 1/34 - Compositions alcalines pour le cuivre ou ses alliages
C23F 1/40 - Compositions alcalines pour les autres matériaux métalliques
C23F 1/46 - Régénération des compositions de décapage
17.
DEVICE AND SYSTEM FOR TRANSPORTING A PLURALITY OF PARTS TO BE TREATED THROUGH AN APPARATUS FOR WET-CHEMICAL TREATMENT
A device for transporting a plurality of parts to be treated through an apparatus for wet-chemical treatment comprises a transporter (16), comprising at least one runner (39a, b, 40a, b) for supporting the transporter (16) for movement along at least one track (5a, b) in a first direction (x). At least part of the transporter (16) is located next to the runners (39a, b, 40a, b), seen in a second direction (y) transverse to the first direction (x). This part extends from a level below the runners (39a, b, 40a, b) to a level above the runners (39a, b, 40a, b) in a third direction (z) transverse to the first and second directions (x,y). The device further comprises a container (14) having an interior for accommodating the plurality of parts and a frame (15), at least indirectly connecting the container (14) to the transporter (16) to allow the transporter (16) to carry the container (14) at a level below the runners (39a, b, 40a, b). The frame (15) comprises a respective frame part (23a, b) at at least one of opposite axial ends of the container (14) with respect to an axis (18) of the container (14). The container (14) is liquid-pervious between the axial ends to allow liquid to flood the interior when the container (14) is immersed in the liquid. The axis (18) of the container (14) extends in a direction (x) transverse to the second and third directions (y,z).
B65G 49/04 - Systèmes transporteurs caractérisés par leur utilisation à des fins particulières, non prévus ailleurs pour transporter des pièces à usiner dans des bains de liquide les pièces à usiner étant immergées et retirées par déplacement selon le sens vertical
A method for post-treatment of a chromium finish surface to improve corrosion resistance comprising a) providing a substrate having a chromium finish surface, and at least one intermediate layer between the chromium finish surface and the substrate, selected from the group consisting of nickel, nickel alloys, copper and copper alloys, wherein the chromium finish surface is a surface of a trivalent chromium plated layer, obtained by electroplating the substrate, having the at least one intermediate layer, in a plating bath, the plating bath comprising chromium (III) ions; b) contacting the chromium finish surface with an aqueous solution, comprising a permanganate, at least one compound which is selected from a phosphorus-oxygen compound, a hydroxide, a nitrate, a borate, boric acid, a silicate, or a mixture of two or more of these compounds; c) forming a transparent corrosion protection layer onto the chromium finish surface during step b.
C25D 9/06 - Revêtement électrolytique autrement qu'avec des métaux avec des matières inorganiques par des procédés anodiques
C25D 5/14 - Dépôt de plusieurs couches du même métal ou de métaux différents au moins une couche étant du nickel ou du chrome plusieurs couches étant du nickel ou du chrome, p. ex. couches doubles ou triples
19.
ACIDIC AQUEOUS COMPOSITION FOR ELECTROLYTICALLY DEPOSITING A COPPER DEPOSIT
22 groups, halogen atoms, and sulfur atoms; a method of electrolytic copper plating using the acidic aqueous composition; and specific suppressors as defined above.
C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
C07D 233/60 - Composés hétérocycliques contenant des cycles diazole-1, 3 ou diazole-1, 3 hydrogéné, non condensés avec d'autres cycles comportant deux liaisons doubles entre chaînons cycliques ou entre chaînons cycliques et chaînons non cycliques avec uniquement des atomes d'hydrogène ou des radicaux ne contenant que des atomes d'hydrogène et de carbone, liés aux atomes de carbone du cycle avec des radicaux hydrocarbonés, substitués par des atomes d'oxygène ou de soufre, liés aux atomes d'azote du cycle
The present inventions refers to a method for forming a black-passivation layer on a zinc-iron alloy of a substrate, a black-passivation composition for depositing a black-passivation layer on such, wherein the black-passivation composition comprises one or more than one blackening agent selected from the group consisting of formula (I) and formula (II) as described hereinafter, and a respective use of said blackening agents for blackening a zinc-iron alloy.
C23C 22/34 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux au moyen de solutions aqueuses au moyen de solutions aqueuses acides d'un pH < 6 contenant des fluorures ou des fluorures complexes
C23C 22/46 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux au moyen de solutions aqueuses au moyen de solutions aqueuses acides d'un pH < 6 contenant des oxalates
C23C 22/73 - Traitement chimique de surface de matériaux métalliques par réaction de la surface avec un milieu réactif laissant des produits de réaction du matériau de la surface dans le revêtement, p. ex. revêtement par conversion, passivation des métaux caractérisé par le procédé
C23C 22/80 - Pré-traitement du matériau à revêtir au moyen de solutions contenant des composés du titane ou du zirconium
This invention is related to a process for purification of metallic objects comprising an oil-adsorbing step in the presence of a liquid and a layer silicate component.
The present invention relates to a specific azole silane compound, an oligomer thereof, a mixture comprising said compound and/or said oligomer, as well as a respective storage and working solution. Furthermore, the present invention relates to a synthesis method for said specific azole silane compound, and the use of said working solution as a surface treatment solution.
wherein, in each said quinoline-polyethylene glycol containing compound, one to three of said one to three quinoline group is connected via one or more oxygen atom of said one or more polyethylene glycol group via carbon 6 or carbon 8 of said one to three quinoline group.
C07C 215/20 - Composés contenant des groupes amino et hydroxy liés au même squelette carboné ayant des groupes hydroxy et des groupes amino liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant saturé le squelette carboné étant saturé et contenant des cycles
C07C 215/24 - Composés contenant des groupes amino et hydroxy liés au même squelette carboné ayant des groupes hydroxy et des groupes amino liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant non saturé et acyclique
An electroless copper plating bath for depositing a copper or copper alloy layer on a surface of a substrate, including copper ions; a reducing agent; a complexing agent for copper ions; wherein the bath further includes at least one compound according to formula (1):
4 form together an aromatic ring, respectively.
C23C 18/40 - Revêtement avec du cuivre en utilisant des agents réducteurs
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
The present invention is related to an acidic zinc or zinc-nickel alloy electroplating bath for depositing a zinc or zinc-nickel alloy layer and a method for zinc or zinc-nickel alloy electroplating making use of such an electroplating bath.
An electrode for an apparatus (1) for electrolytically treating a workpiece (3), the apparatus (1) being of a type arranged to convey the workpiece (3) with a surface to be treated past and directed towards a surface of the electrode, is divided into segments (23a-e) at at least this surface of the electrode. The segments (23a-e) are arranged next to each other in a first direction (x). Adjacent segments (23a-e) are separated from each other along respective segment edges (24a-f) such as to allow adjacent segments (23a-e) to be maintained at different respective voltages. The segment edges (24a-f) extend at least partly in a second direction (y) from a common value (y0) of a co-ordinate in the second direction (y) to an edge (25, 26) of at least an electrically conducting part of the electrode surface, the second direction (y) being transverse to the first direction (x) and corresponding to a direction of movement of the workpiece, in use. The segment edges (24a-f) between at least one pair of adjacent segments (23a-e) extend along respective paths of which an angle to the electrode surface edge (25, 26) decreases from the common value (y0) of the co-ordinate to the electrode surface edge (25, 26).
The present invention refers to an electroplating composition for depositing a chromium coating on a substrate, the composition comprising: (i) trivalent chromium ions, (ii) at least one complexing agent for the trivalent chromium ions, and (iii) at least one additive selected from the group consisting of betaines, polymeric glycols, monomeric diols, and mixtures thereof.
The present invention is directed to a method for depositing a zinc-nickel alloy on a substrate, the method comprising the steps: (a) providing the substrate, (b) providing an aqueous zinc-nickel deposition bath as a catholyte in a deposition compartment, wherein - the deposition compartment comprises at least one anode with an anolyte, and - the anolyte is separated from the catholyte by at least one membrane, and the catholyte comprises (i) nickel ions, (ii) at least one complexing agent for nickel ions, and (iii) zinc ions, (c) contacting the substrate with the catholyte in the deposition compartment such that the zinc-nickel alloy is electrolytically deposited onto the substrate and thereby obtaining a zinc-nickel coated substrate, wherein after step (c) the nickel ions in the catholyte have a lower concentration than before step (c), (d) rinsing the zinc-nickel coated substrate in a rinsing compartment comprising water, such that a rinsed zinc-nickel coated substrate and rinse water is obtained, wherein the rinse water comprises a portion of the at least one complexing agent for nickel ions and a portion of the nickel ions, characterized in that (i) at least a portion of the rinse water and/or at least a portion of the catholyte is treated in a first treatment compartment such that water is separated from the at least one complexing agent for nickel ions and the nickel ions, (ii) at least a portion of the at least one complexing agent separated from water is returned into the catholyte, and (iii) a nickel ion source is added to the catholyte, with the proviso that the nickel ion source does not comprise said at least one complexing agent for nickel ions or any other complexing agent for nickel ions.
The present inventions refers to a passivation composition for depositing a chromium-comprising passivation layer on a zinc or zinc-nickel coated substrate, the composition comprising: (i) trivalent chromium ions, (ii) at least one complexing agent for the trivalent chromium ions, being different from the at least one corrosion-inhibiting agent, and (iii) at least one corrosion-inhibiting agent, which is (A) one or more than one substituted azole compound and/or salts thereof, together in a total concentration below 10 mg/L, based on the total volume of the passivation composition, and/or (B) one or more than one unsubstituted or substituted aliphatic organic acid with at least one mercapto-group and/or salts thereof, together in a total concentration in a range from 0.001 mg/L to 100 mg/L, based on the total volume of the passivation composition.
The present inventions refers to a method for reducing the concentration of iron ions in a trivalent chromium electroplating bath, the method comprising the following steps: (i) providing the trivalent chromium electroplating bath comprising (a) trivalent chromium ions, and (b) iron ions, (ii) subjecting at least a portion of the trivalent chromium electroplating bath to air agitation, to obtain at least an air-agitated portion of the trivalent chromium electroplating bath, (iii) contacting the air-agitated portion of the trivalent chromium electroplating bath with an ion exchange resin, to obtain a resin-treated portion of the trivalent chromium electroplating bath, and (iv) returning the resin-treated portion of the trivalent chromium electroplating bath to the trivalent chromium electroplating bath, with the proviso that - the trivalent chromium electroplating bath provided in step (i) was or is utilized for electrodepositing a chromium layer on at least one substrate applying a cathodic current density of 18 A/dm2 or more, - after step (iii), the iron ions in the resin-treated portion of the trivalent chromium electroplating bath have a lower concentration than in the air-agitated portion of the trivalent chromium electroplating bath, and - after step (iv), the iron ions in the trivalent chromium electroplating bath have a concentration below 50 mg/L, based on the total volume of the trivalent chromium electroplating bath.
The present invention relates to an electroless nickel alloy plating bath comprising nickel ions; further reducible metal ions selected from the group consisting of molybdenum ions, rhenium ions, tungsten ions, copper ions, oxo-ions thereof, and mixtures thereof; at least one reducing agent suitable to reduce the nickel ions and the further reducible metal ions to their respective metallic state; complexing agents CA1, CA2, CA3, and CA4, wherein CA1, CA2, CA3, and CA4 are all different from each other, wherein each of CA1 and CA2 is independently selected from the group consisting of compounds having at least two carboxylic acid moieties, the respective salts thereof as well as mixtures of the aforementioned; wherein CA3 is selected from the group consisting of aliphatic compounds having exactly one carboxylic acid moiety, the respective salts thereof as well as mixtures of the aforementioned; and wherein CA4 is selected from the group consisting of aromatic compounds having at least one carboxylic acid moiety, the respective salts thereof as well as mixtures of the aforementioned.
yyxyxyzz) perpendicular to the central plane (4). Channels (23a, b, 24a, b) are provided through the walls (13a, b), each channel (23a, b, 24a, b) arranged to conduct liquid to a respective one of the apertures (27).
ORGANIC-SOLVENT BASED COATING COMPOSITION FOR COATING A SURFACE OF A METAL SUBSTRATE FOR INCREASING THE COEFFICIENT OF FRICTION OF THE SURFACE OF THE METAL SUBSTRATE
The present disclosure is directed to an organic-solvent based coating composition for coating a surface of a metal substrate for increasing the coefficient of friction of the surface of the metal substrate, the composition comprising (i) at least one organic solvent; (ii) at least one particulate metal provided as metal flakes and having a diameter ranging from 1 pm to 100 µm; (iii) at least one metal carbide at a total concentration ranging from 0.1 wt.-% to 5 wt.-% based on the total weight of the coating composition; and (iv) at least one binding agent.
C09D 5/00 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte
C09D 5/10 - Peintures anti-corrosion contenant une poudre métallique
C09D 7/61 - Adjuvants non macromoléculaires inorganiques
The present invention refers to a method of preparing a high density interconnect printed circuit board (HDI PCB) or IC substrates including through-holes and/or grate structures filled with copper, which comprises the steps of: a) providing a multi-layer substrate comprising (i) an insulating core layer having a peripheral surface, or (i') a stack assembly comprising an insulating core layer embedded between two electrically conductive interlayers and at least one outer insulating layer attached on the electrically conductive interlayers and having a peripheral surface, (ii) an optional cover layer covering the peripheral surface, and (iii) at least one through-hole extending through all layers of the multilayer substrate; and a grate structure having multiple slots extending through the optional cover laver and partially extending in the insulating core layer or extending through at least the optional cover layer and at least one of the outer insulating layers; b) forming a non-copper conductive layer or a copper layer on the cover layer and on an inner surface of the through-hole, respectively on an inner surface of the grate structure; c) forming a patterned masking film on the non-copper conductive layer or on the copper layer; d) electrodepositing a copper inner-seal inside the through-hole sufficient to form two blind-microvias, respectively electrodepositing a copper inlay on the non-copper conductive layer or on the copper layer of the inner surface of the grate structure and on the remaining peripheral surface of the non-copper conductive layer or of the copper layer, in one step; e) removing the masking film; and f) electrodepositing a copper filling in the blind-microvias, respectively the copper inlay, and on the first copper layer in one step.
H05K 3/10 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
The present invention refers to a method of preparing a high density interconnect printed circuit board (HDI PCB) including microvias filled with copper. The method comprises the steps of: a1) providing a multi-layer substrate comprising (i) a stack assembly of an electrically conductive interlayer embedded between two insulating layers having a peripheral surface, (ii) a cover layer covering the peripheral surface of the multi-layer substrate, and (iii) a microvia extending from the peripheral surface of the multi-layer substrate through the cover layer and ending on the conductive interlayer; b1) depositing a conductive layer on the cover layer and on an inner surface of the microvia; or a2) providing a multi-layer substrate comprising (i) a stack assembly of an electrically conductive interlayer embedded between two insulating layers having a peripheral surface, (ii) a microvia extending from the peripheral surface of the multi-layer substrate and ending on the conductive interlayer; b2) depositing a conductive layer on the peripheral surface of the multi-layer substrate and on an inner surface of the microvia; and c) electrodepositing a copper filling in the microvia and a first copper layer on the conductive layer wherein a thickness of the first copper layer is from 0.1 to 3 µm and wherein the copper filling and the first copper layer form together a planar surface.
H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
H05K 3/10 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
d) at least one phosphonate compound according to formula (1)
The invention further is directed to the use of the bath and a method for depositing a gold layer on a surface of a substrate. The bath is particularly suitable in the manufacture of printed circuit boards, IC substrates, semiconducting devices, interposers made of glass and the like.
A device for moving an object comprising at least a substrate (2) through an open side of a processing station (la,b) of a processing apparatus comprises at least one support (26;26'), placeable at the processing station (la,b). The device comprises at least one carrier (27a,b;27'a,b), each guided for movement relative to the support(s) (26;26') along a respective path predominantly directed in parallel to a reference axis (z) in a reference co-ordinate system. The device comprises at least one device (29a,b,30a,b,31a,b;37a,b) for controlling the movement of at least one of the carriers (27a,b;27'a,b) and driving the movement in at least one of opposite directions along the path. The device comprises a component (21;21') for holding the object and a suspension mechanism with which the holding component (21;21') is connected to the at least one carrier (27a,b;27'a,b). The suspension mechanism is arranged to guide movement of the holding component (21;21') relative to the at least one carrier (27a,b;27'a,b) along a holding component (21;21') path. The device (29a,b,30a,b,31a,b;37a,b) is arranged to drive the movement of the holding component (21;21') in at least one direction along the holding component path. The holding component path is predominantly directed in parallel to the reference axis (z).
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
38.
Method for increasing corrosion resistance of a substrate comprising an outermost chromium alloy layer
wherein in step (i) the outermost layer is electrolytically deposited from aqueous, acidic deposition composition, the composition including trivalent chromium ions, at least one organic acid comprising an isothiureido moiety and/or salts thereof, and chloride ions in amount of 0 wt-% to 0.1 wt-%.
The present invention concerns a tin plating bath comprising tin ions; titanium ions as reducing agent suitable to reduce tin ions to metallic tin; and at least one compound selected from the group consisting sulfites, dithionites, thiosulfates, tetrathionates, polythionates, disulfites, sulfides, disulfide, polysulfide, elemental sulfur or mixtures thereof. The present invention further discloses a method of depositing tin or a tin alloy onto a surface of a substrate. The tin plating bath is particularly suitable to be used in the electronics and semiconductor industry.
C23C 18/52 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique en utilisant des agents réducteurs pour le revêtement avec des matériaux métalliques non prévus par un seul des groupes
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
40.
Plating compositions for electrolytic copper deposition, its use and a method for electrolytically depositing a copper or copper alloy layer onto at least one surface of a substrate
The present invention relates to a plating composition for electrolytic copper deposition, comprising copper ions, halide ions and at least one acid, at least one benzothiazole compound, at least one phenazine dye and at least one ethanediamine derivative. The present invention further concerns the use of above plating composition and a method for electrolytically depositing a copper or copper alloy layer onto at least one surface of a substrate.
The present invention concerns a metal or metal alloy deposition composition, particularly a copper or copper alloy deposition composition, for electrolytic deposition of a metal or metal alloy layer, particularly for electrolytic deposition of a copper or copper alloy layer, comprising at least one type of metal ions to be deposited, preferably copper ions, and at least one imidazole based plating compound. The present invention further concerns a method for preparation of the plating compound, the plating compound itself and its use in a metal or metal alloy deposition composition. The inventive metal or metal alloy deposition composition can be preferably used for filling recessed structures, in particular those having higher diameter to depth aspect ratios.
C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
C25D 3/58 - Dépôt électrochimiqueBains utilisés à partir de solutions d'alliages contenant plus de 50% en poids de cuivre
C08G 73/06 - Polycondensats possédant des hétérocycles contenant de l'azote dans la chaîne principale de la macromoléculePolyhydrazidesPolyamide-acides ou précurseurs similaires de polyimides
C25D 9/02 - Revêtement électrolytique autrement qu'avec des métaux avec des matières organiques
42.
GALVANIC NICKEL OR NICKEL ALLOY ELECTROPLATING BATH FOR DEPOSITING A SEMI-BRIGHT NICKEL OR SEMI-BRIGHT NICKEL ALLOY COATING
11 183118118 234563451181183456383822222333333222222222222222222– OH, and wherein the electroplating bath comprises chloral hydrate, wherein the chloral hydrate has a concentration of less than 0.07 g/l.
The present invention relates to a method for activating a surface of a non-conductive or carbon-fibres containing substrate for metallization, the method comprising the steps (a) providing said substrate, (b) providing an aqueous, palladium-free activation composition comprising (i) a first species of dissolved transition metal ions and additionally metal particles thereof, (ii) one or more than one complexing agent, (iii) permanently or temporarily one or more than one reducing agent, (iv) optionally one or more than one second species of dissolved metal ions being different from the first species, wherein - at least of the first species, the dissolved transition metal ions and the metal particles thereof are present in a reversible equilibrium, with the proviso that - the metal particles are formed from the dissolved transition metal ions through a continuous or semi-continuous reduction through the one or more than one reducing agent, - the dissolved transition metal ions are formed from the metal particles through continuous or semi-continuous oxidation of said particles, and - the dissolved transition metal ions and the metal particles thereof, respectively, are repeatedly involved in said reduction and said oxidation such that no precipitating agglomerates of said metal particles a r e formed, (c) contacting the substrate with said activation composition such that a transition metal or a transition metal alloy is deposited on the surface of said substrate and an activated surface for metallization is obtained.
The present invention relates to a method for increasing adhesion strength between a surface of a metal, a metal alloy or a metal oxide and a surface of an organic material comprising as a main step contacting of at least one section of said metal, metal alloy or metal oxide with a specific azole silane compound, a specific azole silane oligomer, or a mixture comprising said compound and/or said oligomer. Furthermore, the present invention relates to a use of said specific azole silane compound, said specific azole silane oligomer, or said mixture in a method for increasing adhesion strength between a surface of a metal, a metal alloy or a metal oxide and a surface of an organic material.
The present invention is related to an aqueous post treatment composition for providing a post treatment layer on at least a part of a passivation layer, which is covering at least a part of a zinc layer being on at least a part of an iron containing substrate, characterized in that the aqueous post treatment composition comprises at least one chromium (III) ion source and at least one compound containing the chemical element silicon; wherein a molar ratio of silicon versus chromium is given in said composition, with the proviso that said molar ratio is ranging from 2600:1 to 1 : 1 for the zinc layer obtained by an electrolytic acid zinc deposition process; or that said molar ratio is ranging from 5200:1 to 1:1 for the zinc layer obtained by an electrolytic alkaline zinc deposition process.
A method for obtaining information about a layer of an organic solderability preservative, OSP, on a printed circuit board, PCB, the method comprising • Providing a PCB (16) having a copper layer (18), wherein a solder resist (19) is placed on the copper layer (18), and the solder resist (19) has openings (21) wherein in the openings (21) a copper surface of the copper layer (18) is covered by a layer of an OSP, • Providing a fluorescence measuring system (10), comprising a radiation source (11), a detection unit (12), and a movement device (24), the method comprising: • a) Obtaining (S2) information about the location of the openings (21) on the PCB (16), • b) Selecting (S3) at least one of the openings (21), • c) Placing (S4) the radiation source (11) at such position that the radiation beam (22) irradiates into the at least one selected opening (21) on the layer of the OSP (20), • d) Detecting (S5) the fluorescent radiation (23) emitted from the OSP (20).
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
The present invention is related to a method for electrolytically depositing a zinc-nickel alloy layer on a substrate, wherein the method comprises an interrupting of the execution of the electrolytical deposition of a zinc-nickel alloy layer on the surface of a substrate by terminating applying the current from the external current source to each of the soluble zinc anode(s) and to each of the soluble nickel anode(s); and wherein afterwards at least one soluble zinc anode, which is remaining in the electrolysis reaction container, is electrically connected by an electrical connection element to form an electrical connection to at least one soluble nickel anode, which is remaining in the electrolysis reaction container, for at least a part of the defined period of time in which no current from the external current source is applied to each of the soluble zinc anode(s) and to each of the soluble nickel anode(s).
The present invention is related to a membrane anode system for electrolytic zinc-nickel alloy deposition, a method for electrolytic deposition of a zinc- nickel alloy layer on a substrate to be treated using a membrane anode system, and the use of a membrane anode system for acid or alkaline electrolytic deposition of a zinc-nickel alloy layer on a substrate to be treated by such a method.
An electroless aqueous gold plating bath, comprising at least one source of gold ions and at least one reducing agent for gold ions, characterized in that it comprises at least one ethylenediamine derivative as plating enhancer compound according to formula (I)
An electroless aqueous gold plating bath, comprising at least one source of gold ions and at least one reducing agent for gold ions, characterized in that it comprises at least one ethylenediamine derivative as plating enhancer compound according to formula (I)
An electroless aqueous gold plating bath, comprising at least one source of gold ions and at least one reducing agent for gold ions, characterized in that it comprises at least one ethylenediamine derivative as plating enhancer compound according to formula (I)
wherein the residues R1 and R2 comprise 2 to 12 carbon atoms and are selected from the group consisting of branched alkyl, unbranched alkyl, cycloalkyl or combinations thereof wherein the individual residues R1 and R2 are the same or different and a method of depositing of gold. The electroless aqueous gold plating bath is suitable to provide soft gold layers useful for wire bonding and soldering applications which are required for electronic components.
A method of forming copper oxide on a copper surface, the method comprising the steps a) providing a substrate comprising the copper surface, b) optionally pre-cleaning the copper surface, c) contacting the copper surface with an alkaline aqueous oxidizing solution comprising one or more than one oxidizing compound selected from the group consisting of - an aromatic sulfonic acid compound, salts thereof, - an aromatic sulfonic acid ester compound, salts thereof, - an aromatic nitro compound, and salts thereof, such that said copper oxide is formed on the copper surface.
C23C 22/58 - Traitement d'autres matériaux métalliques
C23G 1/10 - Nettoyage ou décapage de matériaux métalliques au moyen de solutions ou de sels fondus avec des solutions acides des autres métaux lourds
H05K 3/38 - Amélioration de l'adhérence entre le substrat isolant et le métal
51.
Pyridinium compounds, a synthesis method therefor, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths
The present invention concerns pyridinium compounds, a synthesis method for their preparation, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths.
The plating baths are particularly suitable for use in filling of recessed structures in the electronics and semiconductor industry including dual damascene applications.
C07D 401/12 - Composés hétérocycliques contenant plusieurs hétérocycles comportant des atomes d'azote comme uniques hétéro-atomes du cycle, au moins un cycle étant un cycle à six chaînons avec un unique atome d'azote contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
C25D 3/58 - Dépôt électrochimiqueBains utilisés à partir de solutions d'alliages contenant plus de 50% en poids de cuivre
at least one of a dimer of a compound of formula (I) or mixtures thereof
a method for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy with said aqueous bath.
C07D 401/10 - Composés hétérocycliques contenant plusieurs hétérocycles comportant des atomes d'azote comme uniques hétéro-atomes du cycle, au moins un cycle étant un cycle à six chaînons avec un unique atome d'azote contenant deux hétérocycles liés par une chaîne carbonée contenant des cycles aromatiques
C25D 3/56 - Dépôt électrochimiqueBains utilisés à partir de solutions d'alliages
2mm Mm+(I) wherein n is integer from 2 to 4 and m is 1 or 2, R is independently H or OH with proviso that at least one R is OH, and wherein Mm+with m: 1 is hydrogen, ammonium or alkali metal; or Mm+ with m: 2 is earth alkali metal, - at least one polyoxyethylene sorbitan fatty acid ester, - at least one sulphonated fatty acid or a salt thereof.
A method for depositing a chromium or chromium alloy layer on at least one substrate, the method comprising the steps (a) providing an aqueous deposition bath with a pH in the range from 4.1 to 6.9, the bath comprising - trivalent chromium ions, - formate ions, and - optionally sulfate ions, (b) providing the at least one substrate and at least one anode, (c) immersing the at least one substrate in the aqueous deposition bath and applying an electrical current such that the chromium or chromium alloy layer is deposited on the substrate, the substrate being the cathode, wherein, if during or after step (c) the trivalent chromium ions have a concentration below a target concentration of trivalent chromium ions, then (d) adding dissolved trivalent chromium formate to the aqueous deposition bath such that trivalent chromium ions are present in a higher concentration than before step (d), with the proviso that - solid trivalent chromium formate is dissolved in a separated partial volume taken from the aqueous deposition bath to obtain said dissolved trivalent chromium formate for step (d).
An electroless nickel or cobalt plating solution, comprising - nickel ions or cobalt ions, - Ti3+ions as reducing agent for reducing said nickel ions and cobalt ions, - one or more than one complexing agent independently selected from the group consisting of - an organic phosphonic acid compound, its salts and esters, - an organic polyphosphoric acid compound, its salts and esters, and - an inorganic polyphosphoric acid compound, its salts and esters, wherein the molar ratio of the complexing agent to the Ti3+ ions is 1.5 : 1 or higher, and the plating solution does not comprise citric acid, salts thereof, and tin.
C23C 18/34 - Revêtement avec l'un des métaux fer, cobalt ou nickelRevêtement avec des mélanges de phosphore ou de bore et de l'un de ces métaux en utilisant des agents réducteurs
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p. ex. dépôt électrolytique
An end effector for clamping a slab formed substrate (2) having a rim section (5) that is arranged at least approximately and at least partially in a substrate main plane comprises at least a pressing device (10) providing at least a pressing area (11), and at least a support device (20) providing at least a support area (21). The end effector (1) is configured, in a clamped state of the substrate (2), to clamp the substrate (2) at a first surface (3) by a pressing area (11) of a pressing device (10) and at a second surface (4) that is, in regard to the first surface (3), arranged at the opposite side of the substrate (2) by a support area (21) of a support device (20). The end effector comprises a guide (15) for guiding the pressing device (10) relative to the support device (20).
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
An electroless nickel plating solution, comprising - a source of nickel ions, - a source of molybdenum ions, - a source of tungsten ions, - a source of hypophosphite ions - at least one complexing agent, - at least one organic sulphur containing compound in a concentration of 0.38 – 38.00 µmol/L, and - at least one amino acid in a concentration of 0.67 – 40.13 mmol/L, a method for electroless plating of a nickel alloy layer on a substrate, a nickel alloy layer and an article comprising the a nickel alloy layer.
Aqueous acidic copper electroplating bath comprising: copper ions; at least one acid; halide ions; at least one sulfur containing compound selected form the group consisting of sodium 3-mercaptopropylsulfonate, bis(sodiumsulfopropyl)disulfide, 3-(N,N-dimethylthiocarbamoyl)-thiopropanesulfonic acid or the respective sodium salt thereof and mixtures of the aforementioned; at least one amine reaction product of diethylamine with epichlorohydrin or an amine reaction product of isobutyl amine with epichlorohydrin or mixtures of these reaction products; at least one ethylene diamine compound selected from the group having attached EO-PO-block polymers, attached EO-PO-block polymers and sulfosuccinate groups and mixtures thereof; at least one aromatic reaction product of benzylchloride with at least one polyalkylenimine and a method for electrolytically depositing of a copper coating using the electroplating bath.
C23C 18/54 - Dépôt par contact, c.-à-d. dépôt électrochimique sans courant
C23G 1/06 - Nettoyage ou décapage de matériaux métalliques au moyen de solutions ou de sels fondus avec des solutions acides avec emploi d'inhibiteurs inhibiteurs organiques
C25D 5/34 - Prétraitement des surfaces métalliques à revêtir de métaux par voie électrolytique
C25D 7/00 - Dépôt électrochimique caractérisé par l'objet à revêtir
H05K 3/26 - Nettoyage ou polissage du parcours conducteur
60.
A METHOD FOR ELECTROLYTICALLY PASSIVATING A SURFACE OF SILVER, SILVER ALLOY, GOLD, OR GOLD ALLOY
The present invention relates to a method for electrolytically passivating a surface of silver, silver alloy, gold, or gold alloy, the method comprising the steps of (i) providing a substrate comprising said surface, (ii) providing an aqueous passivation solution comprising - trivalent chromium ions, and - one or more than one species of carboxylic acid residue anions, (iii) contacting the substrate with said passivation solution and passing an electrical current between the substrate as a cathode and an anode such that a passivation layer is electrolytically deposited onto said surface, wherein the trivalent chromium ions with respect to all species of carboxylic acid residue anions form a molar ratio in the range from 1:10 to 1:400.
The present invention refers to a new type of transport roller providing a modified surface to provide improved transport properties for new substrates. Furthermore, it refers to horizontal transport systems beneficially utilizing such transport rollers, especially for providing retaining roller pairs. Additionally, the present invention refers to a treatment device containing such transport roller or horizontal transport system. Furthermore, it refers to a method for treating a substrate and the use of such transport roller.
B65H 5/06 - Transfert des articles retirés des pilesAlimentation des machines en articles par rouleaux
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
H05K 3/06 - Élimination du matériau conducteur par voie chimique ou électrolytique, p. ex. par le procédé de photo-décapage
The present invention refers to a substrate holder loading device to be used in a clean room and a clean room treatment device containing such substrate holder loading device. Furthermore, the present invention refers to a method of loading a substrate holder with a first substrate, more preferably with a first and a second substrate.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
B65G 47/91 - Dispositifs pour saisir et déposer les articles ou les matériaux comportant des pinces pneumatiques, p. ex. aspirantes
C25D 17/06 - Dispositifs pour suspendre ou porter les objets à revêtir
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H02K 7/116 - Association structurelle avec des embrayages, des freins, des engrenages, des poulies ou des démarreurs mécaniques avec des engrenages
H02K 37/24 - Association structurelle à des dispositifs mécaniques auxiliaires
The present invention relates to a specific azole silane compound, an oligomer thereof, a mixture comprising said compound and/or said oligomer, as well as a respective storage and working solution. Furthermore, the present invention relates to a synthesis method for said specific azole silane compound, and the use of said working solution as a sur- face treatment solution.
The present invention is related to an acidic zinc or zinc-nickel alloy electroplating bath for depositing a zinc or zinc-nickel alloy layer and a method for zinc or zinc-nickel alloy electroplating making use of such an electroplating bath. The bath comprises a triazole derivative and a polyethylene glycol derivative.
An electroless copper plating bath for depositing a copper or copper alloy layer on a surface of a substrate, comprising a) copper ions; b) at least one reducing agent suitable for reducing copper ions to metallic copper; c) at least one complexing agent for copper ions; characterized in that the electroless copper plating bath further comprises d) at least one compound according to formula (1) wherein Z1 and Z2 are independently selected from the group consisting of hydrogen; carboxylic acid group; carboxylate group; sulfonic acid group; sulfonate group; carboxamide group; nitrile group; nitro group; substituted or non-substituted trialkylammonium group; substituted or non-substituted 2-carboxyvinyl group; substituted or non-substituted 2-vinylcarboxylate group; substituted or non-substituted 2-(trialkylammonium)vinyl group; substituted or non-substituted hydroxamic acid group; and substituted or non-substituted oxime group; with the proviso that at least one of Z1and Z2is not hydrogen; and wherein R1, R2, R3and R4are defined as follows: i. R1, R2, R3and R4are hydrogen; or ii. R1with R2are forming together a substituted or non-substituted aromatic ring moiety, R3and R4are hydrogen; or iii. R3with R4are forming together a substituted or non-substituted aromatic ring moiety, R1and R2are hydrogen; or 25 iv. R1 with R2 as well as R3with R4 are forming together a substituted or non- substituted aromatic ring moiety, respectively. The invention further concerns a method for depositing at least a copper or copper alloy layer on a surface of a substrate, a layer system and a kit-of-parts for providing the inventive electroless copper plating bath.
The present invention refers to aqueous composition for depositing a tin silver alloy, the composition comprising (a) tin ions, (b) silver ions, (c) at least one first compound independently selected from the group consisting of unsubstituted bis(aminophenyl)disulfides, substituted bis(aminophenyl)disulfides, unsubstituted dipyridyldisulfides, and substituted dipyridyldisulfides, (d) at least one second compound of formula (II), and salts thereof, wherein independently X denotes a C1 to C10 alkyl moiety comprising one or more than one sulfhydryl group, R1denotes hydrogen, methyl, ethyl, linear C3 to C5 alkyl, branched C3 to C5 alkyl, unsubstituted phenyl, substituted phenyl, unsubstituted benzyl, or substituted benzyl, and R2 denotes methyl, ethyl, linear C3 to C5 alkyl, branched C3 to C5 alkyl, unsubstituted phenyl, substituted phenyl, unsubstituted benzyl, or substituted benzyl.
To achieve anti-fingerprint properties to decorative surfaces, a novel method for coating a metal substrate with an anti-fingerprint coating is provided. The method comprises the following method steps: (a) providing the metal substrate; (b) providing a silicone coating mixture containing: (i) at least one first silicone compound selected from the group consisting of mono- or oligo(aminoalkyl)-fluoroalkyl silicones; (ii) at least one second silicone compound selected from the group consisting of aminoalkyl silicones; (iii) at least one acidifier; and (iv) water; further (c) treating the metal substrate with the silicone coating mixture by bringing the metal substrate into contact with the silicone coating mixture; and (d) curing the treated metal substrate at a predetermined temperature.
C23C 18/12 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par décomposition thermique caractérisée par le dépôt sur des matériaux inorganiques, autres que des matériaux métalliques
C08G 77/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone
69.
Method for electrolytically passivating an outermost chromium or outermost chromium alloy layer to increase corrosion resistance thereof
with the proviso that during or after the chemical reducing the one or more than one organic acid residue anion is present for the first time in the passivation solution.
The present invention concerns a tin plating bath comprising tin ions; at least one complexing agent selected from the group consisting of pyrophosphate ions, linear polyphosphate ions and cyclic polyphosphate ions and a nitrogen and sulfur containing stabilizing additive and titanium (III) ions as a reducing agent suitable to reduce tin ions to metallic tin. The present invention further discloses a method of depositing tin or a tin alloy onto a surface of a substrate. The tin plating bath is particularly suitable to be used in the electronics and semiconductor industry.
B22F 7/00 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage
C25D 3/32 - Dépôt électrochimiqueBains utilisés à partir de solutions d'étain caractérisé par les constituants organiques utilisés pour le bain
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
C23C 18/52 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique en utilisant des agents réducteurs pour le revêtement avec des matériaux métalliques non prévus par un seul des groupes
C09D 5/00 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte
C09D 5/10 - Peintures anti-corrosion contenant une poudre métallique
C23C 16/00 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD]
C23C 18/00 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact
71.
Method of forming a solderable solder deposit on a contact pad
A method of forming a solderable solder deposit on a contact pad, comprising the steps of providing an organic, non-conductive substrate which exposes said contact pad under an opening of a first non-conductive resist layer, depositing a conductive layer inside and outside the opening such that an activated surface results, thereby forming an activated opening, electrolytically depositing nickel or nickel alloy into the activated opening such that nickel/nickel alloy is deposited onto the activated surface, electrolytically depositing tin or tin alloy onto the nickel/nickel alloy, with the proviso that the electrolytic deposition of later steps results in an entirely filled activated opening, wherein the entirely filled activated opening is completely filled with said nickel/nickel alloy, or in the entirely filled activated opening the total volume of nickel/nickel alloy is higher than the total volume of tin and tin alloy, based on the total volume of the entirely filled activated opening.
C25D 7/00 - Dépôt électrochimique caractérisé par l'objet à revêtir
H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
H05K 3/10 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché
The present invention relates to a method for increasing adhesion strength between a surface of copper or copper alloy and an organic layer, the method comprising in this order the steps: (i) providing a non-conductive substrate comprising on at least one side said surface, said surface having a total surface area of copper or copper alloy, (ii) contacting said substrate comprising said surface with an acidic aqueous non- etching protector solution comprising (ii-a) one or more than one amino azole, (ii-b) one or more than one organic acid and/or salts thereof, (ii-c) one or more than one peroxide in a total amount of 0.4 wt-% or less, based on the total weight of the protector solution, and (ii-d) inorganic acids in a total amount of 0 to 0.01 wt-%, based on the total weight of the protector solution, wherein during step (ii) the total surface area of said surface is not increased upon contacting with the protector solution.
H05K 3/38 - Amélioration de l'adhérence entre le substrat isolant et le métal
C23F 11/08 - Inhibition de la corrosion de matériaux métalliques par application d'inhibiteurs sur la surface menacée par la corrosion ou par addition d'inhibiteurs à l'agent corrosif dans d'autres liquides
C23G 1/10 - Nettoyage ou décapage de matériaux métalliques au moyen de solutions ou de sels fondus avec des solutions acides des autres métaux lourds
73.
NICKEL COMPRISING LAYER ARRAY AND A METHOD FOR ITS MANUFACTURING
The present invention concerns a new nickel comprising layer array preferably having a reduced nickel ion release and a method for its manufacture. Further, it relates to the use of the layer array as decorative coating on a surface of the substrate. The use of the new layer array reduces the risk of nickel caused dermatitis due to lower release of nickel ions compared to conventional decorative coatings.
C25D 5/14 - Dépôt de plusieurs couches du même métal ou de métaux différents au moins une couche étant du nickel ou du chrome plusieurs couches étant du nickel ou du chrome, p. ex. couches doubles ou triples
74.
Wafer-like substrate processing method and apparatus
The present invention refers to a method for processing a wafer like substrate using a touching gripper and a touchless gripper. Furthermore, the present invention refers to an apparatus for processing a wafer-like substrate containing a touching gripper and a touchless gripper. Additionally, the present invention refers to the use of an inventive apparatus to process a wafer-like substrate.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
C25F 1/00 - Nettoyage, dégraissage, décapage ou enlèvement de battitures par voie électrolytique
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
75.
Non-aqueous stripping composition and a method of stripping an organic coating from a substrate
30 hydrocarbon group, wherein the high-boiling solvent has a boiling point of at least 100° C.; B—at least one high-boiling co-solvent selected from the group, consisting of high-boiling glycols, glycol ethers and amine compounds, wherein the high-boiling co-solvent has a boiling point of at least 100° C.; and C—at least one pH-active agent either selected from the group, consisting of acid compounds or selected from the group, consisting of hydroxide compounds.
Device for vertical galvanic metal deposition on a substrate comprising a first and a second device, arranged vertically parallel to each other; the first device comprising a first anode having a plurality of through-going conduits and a first carrier having a plurality of through-going conduits; wherein said first anode and said first carrier are connected to each other; wherein the second device comprises a first substrate holder adapted to receive a first substrate to be treated, wherein said first substrate holder at least partially surrounds the first substrate along its outer frame, wherein the first device further comprises a plurality of plugs, each plug comprising a through-going channel, each plug arranged such that it runs from the backside of the first carrier through a through-going conduit of the first carrier and further through the conduit of the first anode element, and the plugs are detachably connected to the first device.
A method for manufacturing a printed circuit board, comprising in order steps (i) providing a non-conductive substrate having on a surface copper circuitry with a copper surface, wherein said surface is chemically treated by (a) oxidation and subsequent reduction reaction and/or (b) organic compound attached to said surface, a permanent, non-conductive, not fully polymerized cover layer covering at least partially said surface, (ii) thermally treating the substrate with the cover layer at temperature from 140° C. to 250° C. in atmosphere containing molecular oxygen at 100000 ppm or less, based on the total volume of the atmosphere, wherein a substrate with a permanent, non-conductive cover layer is obtained, with the provisos that (ii) is after (i) but before any metal or metal alloy is deposited onto the cover layer, and that in (ii) the cover layer is fully polymerized in one thermal treating step, if the cover layer is a solder mask.
The present invention is to provide a chrome-plated part having a corrosion resistance in normal and specific circumstances and not requiring additional treatments after chrome plating, and to provide a manufacturing method of such a chrome-plated part.
a and having at least any one of a microporous structure and a microcrack structure.
C25D 5/14 - Dépôt de plusieurs couches du même métal ou de métaux différents au moins une couche étant du nickel ou du chrome plusieurs couches étant du nickel ou du chrome, p. ex. couches doubles ou triples
C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et
C25D 5/00 - Dépôt électrochimique caractérisé par le procédéPrétraitement ou post-traitement des pièces
C25D 3/06 - Dépôt électrochimiqueBains utilisés à partir de solutions de chrome à partir des solutions de chrome trivalent
C25D 3/12 - Dépôt électrochimiqueBains utilisés à partir de solutions de nickel ou de cobalt
79.
Method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor
The present invention relates to a method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor, the use of an acidic palladium plating bath (as defined below) for directly depositing metallic palladium or a palladium alloy onto a non-activated surface of a doped or non-doped gallium nitride semiconductor, and a palladium or palladium alloy coated, doped or non-doped gallium nitride semiconductor.
C23C 18/44 - Revêtement avec des métaux nobles en utilisant des agents réducteurs
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
The present invention concerns an electroless gold plating bath comprising a) gold ions; b) sulfite ions; c) iodide ions; d) at least one phosphonate compound according to form ula ( 1 ) wherein each X is independently an alkanediyl group; R1, R2, R3and each R4 are independently alkanediyl groups;M is independently hydrogen, a metal atom or a cation form ing radical; each n is a rational number and selected in accordance with the valency of the respective M; and b is an integer ranging from 1 to 1 0.The invention further is directed to the use of the bath and a method for depositing a gold layer on a surface of a substrate. The bath is particularly suitable in the manufacture of printed circuit boards, I C substrates, semiconducting devices, interposers made of glass and t he like.
The present invention concerns a metal or metal alloy deposition composition, particularly a copper or copper alloy deposition composition, for electrolytic deposition of a metal or metal alloy layer, particularly for electrolytic deposition of a copper or copper alloy layer, comprising at least one type of metal ions to be deposited, preferably copper ions, and at least one imidazole based plating compound. The present invention further concerns a method for preparation of the plating compound, the plating compound itself and its use in a metal or metal alloy deposition composition. The inventive metal or metal alloy deposition composition can be preferably used for filling recessed structures, in particular those having higher diameter to depth aspect ratios.
C08G 65/26 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir d'éthers cycliques par ouverture d'un hétérocycle à partir d'éthers cycliques et d'autres composés
C08G 65/333 - Polymères modifiés par post-traitement chimique avec des composés organiques contenant de l'azote
C25D 3/12 - Dépôt électrochimiqueBains utilisés à partir de solutions de nickel ou de cobalt
C25D 3/22 - Dépôt électrochimiqueBains utilisés à partir de solutions de zinc
C25D 3/32 - Dépôt électrochimiqueBains utilisés à partir de solutions d'étain caractérisé par les constituants organiques utilisés pour le bain
C25D 3/46 - Dépôt électrochimiqueBains utilisés à partir de solutions d'argent
C25D 3/48 - Dépôt électrochimiqueBains utilisés à partir de solutions d'or
C25D 3/52 - Dépôt électrochimiqueBains utilisés à partir de solutions de métaux du groupe du platine caractérisé par les constituants organiques utilisés pour le bain
C25D 3/56 - Dépôt électrochimiqueBains utilisés à partir de solutions d'alliages
C25D 3/60 - Dépôt électrochimiqueBains utilisés à partir de solutions d'alliages contenant plus de 50% en poids d'étain
C25D 3/62 - Dépôt électrochimiqueBains utilisés à partir de solutions d'alliages contenant plus de 50% en poids d'or
C25D 3/64 - Dépôt électrochimiqueBains utilisés à partir de solutions d'alliages contenant plus de 50% en poids d'argent
82.
UREYLENE ADDITIVE, ITS USE AND A PREPARATION METHOD THEREFOR
The present invention relates to ureylene additives, a method for their preparation, a use of said ureylene additives favorably as additive in metal or metal alloy deposition composition, preferably in a copper or copper alloy deposition composition, more preferably as leveler and/or suppressor therein, metal or metal alloy deposition composition comprising said ureylene additive and the use of such composition, a method for electrolyticaliy depositing a metal or metal alloy layer, preferably a copper or copper alloy layer, onto at least one surface of a substrate and metal or metal alloy layers formed from above metal or metal alloy deposition composition. The ureylene additives allow for example in the case of copper plating for very levelled copper deposits without voids, in particular when filling recesses.
C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
C07C 275/14 - Dérivés d'urée, c.-à-d. composés contenant l'un des groupes les atomes d'azote ne faisant pas partie de groupes nitro ou nitroso ayant des atomes d'azote de groupes urée liés à des atomes de carbone acycliques d'un squelette carboné acyclique et saturé étant substitué de plus par des atomes d'azote ne faisant pas partie de groupes nitro ou nitroso
C07C 211/13 - Amines contenant au moins trois groupes amino liés au squelette carboné
C07C 215/18 - Composés contenant des groupes amino et hydroxy liés au même squelette carboné ayant des groupes hydroxy et des groupes amino liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant saturé et acyclique avec des groupes hydroxy et au moins deux groupes amino liés au squelette carboné
C07C 215/50 - Composés contenant des groupes amino et hydroxy liés au même squelette carboné ayant des groupes hydroxy liés à des atomes de carbone d'au moins un cycle aromatique à six chaînons et des groupes amino liés à des atomes de carbone acycliques ou à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons du même squelette carboné avec des groupes amino reliés au cycle aromatique à six chaînons, ou au système cyclique condensé contenant ce cycle par l'intermédiaire de chaînes carbonées qui ne sont pas substituées de plus par des groupes hydroxy avec des groupes amino et le cycle aromatique à six chaînons, ou le système cyclique condensé contenant ce cycle, liés au même atome de carbone de la chaîne carbonée
C07C 217/42 - Composés contenant des groupes amino et hydroxy éthérifiés liés au même squelette carboné ayant des groupes hydroxy éthérifiés et des groupes amino liés à des atomes de carbone acycliques du même squelette carboné le squelette carboné étant acyclique et saturé ayant des groupes hydroxy éthérifiés et au moins deux groupes amino liés au squelette carboné
C08G 18/28 - Polymérisats d'isocyanates ou d'isothiocyanates avec des composés contenant des hydrogènes actifs caractérisés par l'emploi de composés spécifiés contenant un hydrogène actif
(ii) one or more than one compound of Formula (Ia)
with the definitions given below, the use of the acidic aqueous composition according to the invention for electrolytic copper plating, the use of the compound of Formula (Ia) in an acidic aqueous composition for electrolytic metal plating, a method of electrolytic copper plating using the acidic aqueous composition according to the invention, and specific compounds derived from Formula (Ia) for an acidic aqueous composition for electrolytic metal plating.
A method for post-treatment of a chromium finish surface to improve corrosion resistance comprising a) providing a substrate having a chromium finish surface, and at least one intermediate layer between the chromium finish surface and the substrate, selected from the group consisting of nickel, nickel alloys, copper and copper alloys, wherein the chromium finish surface is a surface of a trivalent chromium plated layer, obtained by electroplating the substrate, having the at least one intermediate layer, in a plating bath, the plating bath comprising chromium (III) ions; b) contacting the chromium finish surface with an aqueous solution, comprising a permanganate, at least one compound which is selected from a phosphorus-oxygen compound, a hydroxide, a nitrate, a borate, boric acid, a silicate, or a mixture of two or more of these compounds; c) forming a transparent corrosion protection layer onto the chromium finish surface during step b.
C25D 9/06 - Revêtement électrolytique autrement qu'avec des métaux avec des matières inorganiques par des procédés anodiques
C25D 5/14 - Dépôt de plusieurs couches du même métal ou de métaux différents au moins une couche étant du nickel ou du chrome plusieurs couches étant du nickel ou du chrome, p. ex. couches doubles ou triples
85.
A METHOD FOR INCREASING CORROSION RESISTANCE OF A SUBSTRATE COMPRISING AN OUTERMOST CHROMIUM ALLOY LAYER
The present invention relates to a method for increasing corrosion resistance of a substrate comprising an outermost chromium alloy layer, the method comprising the steps of (i) providing a substrate comprising said outermost layer, the layer - having a color space defined by CIELAB with a lightness L* of 79 or more, - comprising oxygen and carbon, and - comprising iron in a total amount of 0 atom-% to 1 atom-%, based on the total number of atoms in said outermost layer, (ii) providing an aqueous, acidic passivation solution, the solution comprising - trivalent chromium ions, - phosphate ions, - one or more than one organic acid residue anion, (iii) contacting the substrate with the passivation solution and passing an electrical current between the substrate as a cathode and an anode in the passivation solution such that a passivation layer is deposited onto the outermost layer, wherein in step (i) the outermost chromium alloy layer is electrolytically deposited from an aqueous, acidic deposition composition, the composition comprising - trivalent chromium ions, - at least one organic acid comprising an isothiureido moiety and/or salts thereof, and - chloride ions in a total amount of 0 wt-% to 0.1 wt-%, based on the total weight of the deposition composition.
C25D 3/06 - Dépôt électrochimiqueBains utilisés à partir de solutions de chrome à partir des solutions de chrome trivalent
C25D 9/08 - Revêtement électrolytique autrement qu'avec des métaux avec des matières inorganiques par des procédés cathodiques
C25D 5/14 - Dépôt de plusieurs couches du même métal ou de métaux différents au moins une couche étant du nickel ou du chrome plusieurs couches étant du nickel ou du chrome, p. ex. couches doubles ou triples
86.
A METHOD AND TREATMENT COMPOSITION FOR SELECTIVE REMOVAL OF PALLADIUM
The present invention relates to a method for selective removal of palladium from a surface of a substrate having at least one structured surface with conductive features thereon made of one or more metal or metal alloys which are not palladium and at least one outer layer of palladium layer or parts thereof comprising the following method steps to be carried out in the given order (1) providing said substrate; and i. (2) treating said substrate with a treatment composition comprising at least one solvent; at least one hydroxycarboxylic acid or a salt thereof; and at least one sulfur compound selected from compounds represented by formula (I) compounds represented by formula (II) and mixtures of the aforementioned wherein the concentration of the at least one sulfur compound is at least 0.06 mol/L. The invention further concerns a treatment composition for selective removal of palladium from a surface of a substrate and its use.
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
C23F 1/44 - Compositions pour enlever des matériaux métalliques d'un substrat métallique de composition différente
C23F 1/30 - Compositions acides pour les autres matériaux métalliques
H05K 3/38 - Amélioration de l'adhérence entre le substrat isolant et le métal
H05K 3/26 - Nettoyage ou polissage du parcours conducteur
H05K 3/10 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché
A lead-frame structure having two faces and exposing a treated silver surface on at least one of said two faces, the treated silver surface(s) serving the wire bonding, which lead-frame structure has a surface which, after applying resin to it, has excellent adhesion even under severe testing conditions, such as the IPC/JEDEC J-STD-20 MSL standard, and a surface mount electronic device comprising a lead-frame or lead-frame entity and at least one semiconductor device mounted thereon, wherein the lead-frame or lead-frame entity exposes a treated silver surface on at least one of the two faces thereof, wherein the treated silver surface(s) serve(s) the wire bonding, and wherein a resin is applied to the lead-frame or lead-frame entity, and which surface mount electronic device has excellent adhesion of the surface of the lead-frame or lead-frame entity even under severe testing conditions.
C25D 5/48 - Post-traitement des surfaces revêtues de métaux par voie électrolytique
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
C25D 5/34 - Prétraitement des surfaces métalliques à revêtir de métaux par voie électrolytique
C23C 18/54 - Dépôt par contact, c.-à-d. dépôt électrochimique sans courant
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/14 - Supports, p. ex. substrats isolants non amovibles caractérisés par le matériau ou par ses propriétés électriques
A process for depositing metal or metal alloy on a substrate including treating the substrate surface with an activation solution comprising a source of metal ions so the metal ions are adsorbed on the substrate surface, treating the obtained substrate surface with a treatment solution containing an additive selected from thiols, thioethers, disulphides and sulphur containing heterocycles, and a reducing agent suitable to reduce the metal ions adsorbed on the substrate surface selected from boron based reducing agents, hypophosphite ions, hydrazine and hydrazine derivatives, ascorbic acid, iso-ascorbic acid, sources of formaldehyde, glyoxylic acid, sources of glyoxylic acid, glycolic acid, formic acid, sugars, and salts of aforementioned acids; and subsequently treating the substrate surface with a metallizing solution comprising a source of metal ions to be deposited such that a metal or metal alloy is deposited thereon.
C23C 18/20 - Pré-traitement du matériau à revêtir de surfaces organiques, p. ex. de résines
C23C 18/24 - Pré-traitement du matériau à revêtir de surfaces organiques, p. ex. de résines pour rendre la surface rugueuse, p. ex. par décapage au moyen de solutions aqueuses acides
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
B05D 5/12 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir un revêtement ayant des propriétés électriques spécifiques
H05K 3/12 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de l'impression pour appliquer le matériau conducteur
89.
Composition and process for metallizing nonconductive plastic surfaces
The present invention relates to a process for metallizing electrically nonconductive plastic surfaces of articles using the etching solution. The etching solution is based on a stabilized acidic permanganate solution. After the treatment with the etching solution, the articles can be metallized.
C09K 13/02 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un hydroxyde d'un métal alcalin
C25D 5/56 - Dépôt électrochimique sur des surfaces non métalliques de matières plastiques
C23C 18/20 - Pré-traitement du matériau à revêtir de surfaces organiques, p. ex. de résines
C23C 18/24 - Pré-traitement du matériau à revêtir de surfaces organiques, p. ex. de résines pour rendre la surface rugueuse, p. ex. par décapage au moyen de solutions aqueuses acides
C23C 18/22 - Pré-traitement du matériau à revêtir de surfaces organiques, p. ex. de résines pour rendre la surface rugueuse, p. ex. par décapage
C25D 5/54 - Dépôt électrochimique sur des surfaces non métalliques
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
90.
PLATING COMPOSITIONS FOR ELECTROLYTIC COPPER DEPOSITION, ITS USE AND A METHOD FOR ELECTROLYTICALLY DEPOSITING A COPPER OR COPPER ALLOY LAYER ONTO AT LEAST ONE SURFACE OF A SUBSTRATE
The present invention relates to a plating composition for electrolytic copper deposition, comprising copper ions, halide ions and at least one acid, at least one benzothiazole compound, at least one phenanzine dye and at least one ethanediamine derivative. The present invention further concerns the use of above plating composition and a method for electrolytically depositing a copper or cop- per alloy layer onto at least one surface of a substrate.
The present invention relates to imidazoyl urea polymers and their use in aqueous acidic plating baths for metal or metal alloy deposition such as electrolytic deposition of copper or alloys thereof in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of metal ions and an imidazoyl urea polymer. The plating bath is particularly useful for filling recessed structures and build-up of pillar bump structures.
C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
C07C 275/22 - Dérivés d'urée, c.-à-d. composés contenant l'un des groupes les atomes d'azote ne faisant pas partie de groupes nitro ou nitroso ayant des atomes d'azote de groupes urée liés à des atomes de carbone acycliques d'un squelette carboné non saturé contenant des cycles autres que des cycles aromatiques à six chaînons
C07D 233/61 - Composés hétérocycliques contenant des cycles diazole-1, 3 ou diazole-1, 3 hydrogéné, non condensés avec d'autres cycles comportant deux liaisons doubles entre chaînons cycliques ou entre chaînons cycliques et chaînons non cycliques avec uniquement des atomes d'hydrogène ou des radicaux ne contenant que des atomes d'hydrogène et de carbone, liés aux atomes de carbone du cycle avec des radicaux hydrocarbonés, substitués par des atomes d'azote ne faisant pas partie d'un radical nitro, liés aux atomes d'azote du cycle
92.
METHOD FOR ELECTROLYTICALLY DEPOSITING A ZINC-NICKEL ALLOY LAYER ON AT LEAST A SUBSTRATE TO BE TREATED
The present invention is related to a method for electrolytically depositing a zinc-nickel alloy layer on a substrate, wherein the method comprises an interrupting of the execution of the electrolytical deposition of a zinc-nickel alloy layer on the surface of a substrate by terminating applying the current from the external current source to each of the soluble zinc anode(s) and to each of the soluble nickel anode(s); and wherein afterwards at least one soluble zinc anode, which is remaining in the electrolysis reaction container, is electrically connected by an electrical connection element to form an electrical connection to at least one soluble nickel anode, which is remaining in the electrolysis reaction container, for at least a part of the defined period of time in which no current from the external current source is applied to each of the soluble zinc anode(s) and to each of the soluble nickel anode(s).
The present invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the present invention comprises a source for palladium ions, a reducing agent for palladium ions and an aromatic compound. The aqueous plating bath composition has an increased deposition rate for palladium while maintaining bath stability. The aqueous plating bath composition has also a prolonged life time. The aromatic compounds of the present invention allow for adjusting the deposition rate to a constant range over the bath life time and for electrolessly depositing palladium layers at lower temperatures. The aromatic compounds of the present invention activate electroless palladium plating baths having a low deposition rate and reactivate aged electroless palladium plating baths.
C23C 18/44 - Revêtement avec des métaux nobles en utilisant des agents réducteurs
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
94.
A BATH AND METHOD FOR FILLING A VERTICAL INTERCONNECT ACCESS OR TRENCH OF A WORK PIECE WITH NICKEL OR A NICKEL ALLOY
1222n33 - group, wherein n is an integer in the range of 1-6, and wherein one or more of the hydrogens in the group may be replaced by a substituent, preferably hydroxide; and a method for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy with said aqueous bath.
A method of producing a lead-frame structure having two faces and exposing a treated silver surface on at least one of the two faces, the treated silver surface(s) serving the wire bonding, which yields a surface which, after applying resin to it, has excellent adhesion even under severe testing conditions, such as the IPC/JEDEC J-STD-20 MSL standard, and a method of producing a surface mount electronic device including a lead-frame or lead-frame entity and at least one semiconductor device mounted thereon, wherein the lead-frame or lead-frame entity exposes a treated silver surface on at least one of the two faces, wherein the treated silver surface(s) serve(s) the wire bonding, and wherein a resin is applied to the lead-frame or lead-frame entity, which method yields excellent adhesion of the surface of the lead-frame or lead-frame entity even under severe testing conditions.
C25D 5/48 - Post-traitement des surfaces revêtues de métaux par voie électrolytique
C23C 18/16 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par réduction ou par substitution, p. ex. dépôt sans courant électrique
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
C25D 5/34 - Prétraitement des surfaces métalliques à revêtir de métaux par voie électrolytique
C23C 18/54 - Dépôt par contact, c.-à-d. dépôt électrochimique sans courant
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/14 - Supports, p. ex. substrats isolants non amovibles caractérisés par le matériau ou par ses propriétés électriques
The present invention relates to a method for monitoring the total amount of brighteners in an acidic copper/copper alloy plating bath during a copper/copper alloy plating process, the use of such a method for controlling a plating process, a controlled process for electrolytically depositing copper/copper alloy onto a substrate utilizing the method for monitoring according to the present invention, and the use of one or more than one redox active compound for monitoring and/or determining the total amount of brighteners in the acidic copper/copper alloy plating bath.
C25D 3/38 - Dépôt électrochimiqueBains utilisés à partir de solutions de cuivre
G01N 27/42 - Mesure du dépôt ou de la libération de matériaux d'un électrolyteCoulométrie, c.-à-d. mesure de l'équivalent de Coulomb du matériau dans un électrolyte
The present invention refers to an aqueous composition for depositing a cobalt deposit, the composition comprising (a) cobalt (II) ions, (b) at least one first compound comprising an acetylenic moiety, (c) at least one polymer comprising a plurality of carboxamide moieties each with a secondary or tertiary amine nitrogen, and (d) optionally a buffering agent, and a method for electrolytically depositing a cobalt deposit onto a substrate utilizing the composition above.
The present invention refers to an aqueous composition for depositing a cobalt deposit, the composition comprising (a) a total amount of cobalt (II) ions, (b) at least one first compound of formula (I), wherein independently R1denotes H, -NR3R4, -OR5, or -CR6R6'R7, R2denotes H, C1 to C4 alkyl, halogen, or OH, n is 1, 2, or 3 wherein independently R3denotes H, C1 to C4 alkyl, or an alkylene moiety connected to the nitrogen atom in R1via R4, R4denotes H, C1 to C4 alkyl, or an alkylene moiety connected to the nitrogen atom in R1via R3, R5denotes H or a pair of electrons, or C1 to C4 alkyl, R6denotes H, C1 to C4 alkyl, or an alkylene moiety connected to the carbon atom in R1via R7, R6'denotes H or C1 to C4 alkyl, R7denotes H, C1 to C4 alkyl, or an alkylene moiety connected to the carbon atom in R1via R6, with the proviso that the total amount of said cobalt (II) ions in the composition represents 51 wt.-% to 100 wt.-% of all transition metal cations in the composition, based on the total weight of all transition metal cations in the composition.
An etching solution for copper and copper alloy surfaces comprising at least one acid, at least one oxidising agent suitable to oxidise copper, at least one source of halide ions and further at least one polyamide containing at least one polymeric moiety according to formula (I)
1 is a monovalent residue independently from each other selected from the group consisting of substituted or unsubstituted C1-C8-alkyl groups and a method for its use are provided. Such etching solution is particularly useful for retaining the shape of treated copper and copper alloy lines.
C23F 1/18 - Compositions acides pour le cuivre ou ses alliages
H05K 3/06 - Élimination du matériau conducteur par voie chimique ou électrolytique, p. ex. par le procédé de photo-décapage
H05K 3/38 - Amélioration de l'adhérence entre le substrat isolant et le métal
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
