A light emitting device including a light emitting element having a light emitting surface and an optical component comprising an optical material comprising quantum dots sealed within an optically transparent structural member, the optical component being coupled to the light emitting element by a thermally conductive member is disclosed. A light emitting device including a light emitting element having a light emitting surface and an optical component comprising an optical material comprising quantum dots sealed within a structural member comprising single crystal sapphire, the optical component being coupled to the light emitting element by a thermally conductive member, is also disclosed.
H01L 33/04 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel
2.
LUMINESCENT PARTICLE, MATERIALS AND PRODUCTS INCLUDING SAME, AND METHODS
A luminescent particle including a surface comprising glass that surrounds one or more particles of one or more light emissive materials is disclosed. Preferably the surface comprises a vitrified glass. Methods form making a luminescent particle including a surface comprising glass that surrounds one or more particles of one or more light emissive materials is also disclosed. Compositions and products including a luminescent particle are further disclosed.
Methods and apparatuses of manufacture are disclosed to make a hermetically sealed optical component. An example method comprises providing a first substrate including an arrangement of optical material comprising quantum dots disposed on a surface thereof and an hermetic sealing material comprising a liquid crystalline polymer (LCP) disposed on the surface at or near a perimeter edge of the first substrate, providing a second substrate over the surface of the first substrate including the optical material and the LCP, and sealing the substrates together by heating the LCP to a temperature above its Tg (glass transition temperature) to form a hermetically sealed optical component.
Methods for making multiple hermetically sealed optical components are disclosed. Methods for making an individual hermetically sealed optical component are disclosed. An individual hermetically sealed optical component and products including same are also disclosed.
A light emitting device comprising: a pair of electrodes; two or more light emitting elements disposed between the electrodes in a stacked arrangement, wherein a light emitting element comprises a layer comprising an emissive material; and a charge generation element disposed between adjacent light emitting elements in the stacked arrangement, the charge generation element comprising a first layer comprising an inorganic n-type semiconductor material, and a second layer comprising a hole injection material. A charge generation element is also disclosed.
H01L 33/14 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure contrôlant le transport des charges, p.ex. couche semi-conductrice fortement dopée ou structure bloquant le courant
6.
HIGHLY STABLE QDS-COMPOSITES FOR SOLID STATE LIGHTING AND THE METHOD OF MAKING THEM THROUGH INITIATOR-FREE POLYMERIZATION
The invention provides a lighting device (1) comprising (i) a light source (10) configured to generate light source light (11), and (ii) a light converter (100) configured to convert at least part of the light source light (11) into visible converter light (121), wherein the light converter (100) comprises a polymeric host material (110) with light converter nanoparticles (120) embedded in the polymeric host material (110), wherein the polymeric host material (110) is based on radical polymerizable monomers, and wherein the polymeric host material (110) contains equal to or less then 5 ppm radical initiator based material relative to the total weight of the polymeric host material (110).
C09K 11/56 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du soufre
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
C09K 11/02 - Emploi de substances particulières comme liants, revêtements de particules ou milieux de suspension
7.
METHOD OF MAKING COMPONENTS INCLUDING QUANTUM DOTS, METHODS, AND PRODUCTS
A quantum dot formulation substantially free of oxygen and, optionally, substantially free of water and a method of making a quantum dot formulation substantially free of oxygen and, optionally, substantially free of water is described. Also described are products including the quantum dot formulation described herein and related methods.
A method for preparing semiconductor nanocrystals is disclosed. The method includes adding one or more cation precursors and one or more anion precursors in a reaction mixture including a solvent in a reaction vessel, maintaining the reaction mixture at a first temperature and for a first time period sufficient to produce semiconductor nanocrystal seed particles of the cation and the anion, and maintaining the reaction mixture at a second temperature that is higher than the first temperature for a second time period sufficient to enlarge the semiconductor nanocrystal seed particles to produce semiconductor nanocrystals from the cation and the anion.
B82B 3/00 - Fabrication ou traitement des nanostructures par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
H01B 1/12 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement d'autres substances non métalliques substances organiques
B82B 1/00 - Nanostructures formées par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
9.
COATED SEMICONDUCTOR NANOCRYSTALS AND PRODUCTS INCLUDING SAME
A coated quantum dot is provided wherein the quantum dot is characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90°C or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25°C. Products including quantum dots described herein are also disclosed.
H01L 31/00 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
10.
METHOD OF MAKING COMPONENTS INCLUDING QUANTUM DOTS, METHODS, AND PRODUCTS
A glass tube including quantum dots under oxygen-free conditions is described. An optical component and other products including such glass tube, a composition including quantum dots, and methods are also disclosed.
G02F 1/015 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des éléments à semi-conducteurs ayant des barrières de potentiel, p. ex. une jonction PN ou PIN
G02F 1/25 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur pour la commande de la couleur en ce qui concerne la teinte ou la longueur d'onde prédominante
A method of storing and transporting quantum dot formulations is provided. The method includes storing and/or transporting the quantum dot formulation under an oxygen-containing atmosphere. A sparged and degassed quantum dot formulation is also described.
A method for preparing semiconductor nanocrystals including a core and an overcoating layer is disclosed. According to one aspect of the invention, the method comprises preparing more than one batch of cores comprising a first semiconductor material and having a maximum emission peak within a predetermined spectral region, wherein each batch of cores is characterized by a first excitonic absorption peak at an absorption wavelength and a maximum emission peak at an emission wavelength; selecting a batch of cores from the batches prepared wherein the selected batch is characterized by a difference between the absorption wavelength and the emission wavelength that is less than or equal to 13; and overcoating the cores of the selected batch with a layer comprising a second semiconductor material.
A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90 deg C or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25 deg C is disclosed. Populations, compositions, components and other products including semiconductor nanocrystals of the invention are further disclosed.
A light mixing chamber includes a housing having a channel formed therein, with the channel exposed to an exterior of the housing. A chamber is formed in the housing, and an aperture formed in the housing connects the chamber to the channel. The chamber may house an LED, with an optical member being retained within the channel. A light guide plate may be positioned on an exterior of the housing outside the channel.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p. ex. cellules d'affichage individuelles à cristaux liquides
A method for preparing a light emitting device comprising: disposing an electron- injection layer comprising a metal oxide on a cathode, disposing a first layer adjacent the electron-injection layer, the first layer comprising a small molecule material with a bandgap of at least about 3 eV capable of blocking holes, forming an emissive layer comprising quantum dots capable of emitting blue light upon excitation at a surface of the first layer opposite the electron-injection layer; disposing a second layer comprising a material capable of transporting holes and blocking electrons with a bandgap of at least about 3 eV adjacent a surface of the emissive layer opposite the first layer, and disposing an anode over the second layer. A light- emitting device is also disclosed.
A method for preparing a sol-gel film is disclosed. The method comprises providing a sol-gel composition comprising one or more sol-gel film precursors and a crystallization aid, and processing the sol-gel composition by solution processing to form the sol-gel film. In certain embodiments, the sol-gel film comprises one or more metal oxides. A preferred crystallization aid includes triphenylphosphine oxide. A composition for making a sol-gel film, a sol-gel film, a device including a sol-gel film and a method for making such device are also disclosed.
H05B 33/22 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition des couches auxiliaires diélectriques ou réfléchissantes
H05B 33/10 - Appareils ou procédés spécialement adaptés à la fabrication des sources lumineuses électroluminescentes
17.
METHODS OF COATING SEMICONDUCTOR NANOCRYSTALS, SEMICONDUCTOR NANOCRYSTALS, AND PRODUCTS INCLUDING SAME
The present invention relates to quantum dots including an overcoating, methods for overcoating quantum dots, materials and products including quantum dots taught herein, and materials and products including quantum dots made by a method taught herein. In accordance with one aspect of the present invention, there is provided a method of forming one or more coatings or layers or shells on quantum dots wherein amine species are not present or are not substantially present during formation of at least the outermost coating or layer or shell on core quantum dots.
C09K 11/54 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du zinc ou du cadmium
A glass tube including quantum dots in a polymerized matrix is described. An optical component and other products including such glass tube, a composition including quantum dots, and methods are also disclosed.
The present invention relates to a composition including quantum dots and an emission stabilizer, products including same, and methods, including methods for improving, or enhancing the emission stability of quantum dots. Inclusion of an emission stabilizer in a composition can improve or enhance the stability of at least one emissive property of the quantum dots in the composition against degradation compared to a composition that is the same in all respects except that it does not include the emission stabilizer. Examples of such emissive properties include, by way of example only, lumen output, lumen stability, color point (e.g., CIE x, CIE y) stability, wavelength stability, FWHM of the major peak emission, absorption, solid state EQE, and quantum dot emission efficiency.
The present invention relates to quantum dots including an overcoating, methods for overcoating quantum dots, materials and products including quantum dots taught herein, and materials and products including quantum dots made by a method taught herein. Embodiments of the present invention are directed to methods of providing one or more coatings or layers or shells on quantum dots. According to one aspect, a quantum dot to be provided with a coating or layer or shell may be referred to as a "core" particle or a "core" quantum dot. According to an additional aspect, the core particle is subjected to a high temperature process that forms a coating or layer or shell on the core particle to produce a core-shell quantum dot. According to one aspect, free, unbound phosphonic acid or metal phosphonate species are not present or are not substantially present in the core quantum dots prior to providing a coating or layer or shell on the core quantum dots.
A method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals including steps of providing a first mixture including semiconductor nanocrystals and a solvent, introducing one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, reacting the precursors in the reaction mixture under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals, and wherein an amide compound is formed in situ in the reaction mixture prior to isolating the coated semiconductor nanocrystals or an amide compound is introduced to the first mixture. Semiconductor nanocrystals including coatings grown in accordance with the above methods are also disclosed.
B82B 3/00 - Fabrication ou traitement des nanostructures par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
C30B 13/00 - Croissance des monocristaux par fusion de zoneAffinage par fusion de zone
C30B 17/00 - Croissance des monocristaux sur un germe restant dans le bain fondu pendant la croissance, p. ex. méthode de Nacken-Kyropoulos
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
24.
METHOD FOR PROCESSING DEVICES INCLUDING QUANTUM DOTS AND DEVICES
A method of processing quantum dots is disclosed. The method comprises applying energy to excite the quantum dots to emit light and placing the quantum dots under vacuum after excitation of the quantum dots. Also disclosed is a method of processing a component including quantum dots comprising applying energy to the component including quantum dots to excite the quantum dots to emit light; and placing the component including quantum dots under vacuum after excitation. A method for processing a device is further disclosed, the method comprising applying energy to the device to excite the quantum dots to emit light; and placing the device under vacuum after excitation of the quantum dots. A method for preparing a device is also disclosed. Quantum dots, component, and devices of the methods are also disclosed.
One embodiment relates to a device comprises a pair of electrodes comprising an anode and a cathode; a layer comprising quantum dots disposed between the electrodes, wherein at least a portion of the quantum dots comprise a cote comprising a first semiconductor material and an outer shell surrounding the core, the shell comprising a second semiconductor material, wherein the first semiconductor material confines holes better than electrons in the core and the second semiconductor material is permeable to electrons; and a first layer comprising a material capable of transporting and injecting electrons, the material comprising nanoparticles of a first inorganic semiconductor material, the first layer being disposed between the layer comprising quantum dots and the cathode, wherein the first layer and the cathode form an ohmic contact during operation of the device. In a second embodiments, a device comprises a pair of electrodes comprising an anode and a cathode; a layer comprising quantum dots disposed between the electrodes; a first layer comprising a material capable of transporting and injecting electrons, the material comprising nanoparticles of an n-doped inorganic semiconductor material, the first layer being in contact with the cathode and positioned between the emissive layer and the cathode, and a second layer comprising a material capable of transporting electrons comprising an inorganic semiconductor material, the second layer being disposed between the emissive layer and the first layer, wherein the second layer has a lower electron conductivity than the first layer. In a third embodiment, a device comprises a pair of electrodes comprising an anode and a cathode; an layer comprising quantum dots disposed between the electrodes; and a UV treated first layer comprising a material capable of transporting and injecting electrons in contact with the cathode and positioned between the emissive layer and the cathode, the material capable of transporting and injecting electrons comprising an inorganic semiconductor material. A method and other embodiments are also disclosed.
A method for making semiconductor nanocrystais is disclosed, the method comprising adding a secondary phosphine chalcogenide to a solution including a metal source and a liquid medium at a reaction temperature to form a reaction product comprising a semiconductor comprising a metal and a chalcogen, and quenching the reaction mixture to form quantum dots. Methods for overcoating are also disclosed. Semiconductor nanocrystais are also disclosed.
A method for preparing a device, the method comprising: forming a first device layer over a first electrode, the layer comprising a metal oxide formed from a sol-gel composition that does not generate acidic by-products, and forming a second electrode over the first device layer, wherein the method further includes forming a layer comprising quantum dots over the fust electrode before or after formation of the first device layer. Also disclosed is a device comprising a first device layer formed over a first electrode, the first device layer comprising a metal oxide formed by sol-gel processing that does not include acidic by-products, a second electrode over the first device layer, and a layer comprising quantum dots disposed between the first device layer and one of the two electrodes. A device prepared by the method is also disclosed.
H01B 13/00 - Appareils ou procédés spécialement adaptés à la fabrication de conducteurs ou câbles
H01B 5/14 - Conducteurs ou corps conducteurs non isolés caractérisés par la forme comprenant des couches ou pellicules conductrices sur supports isolants
H01B 1/02 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisésEmploi de matériaux spécifiés comme conducteurs composés principalement de métaux ou d'alliages
F21Y 101/02 - Structure miniature, p. ex. diodes électroluminescentes (LED)
A method for making a device, the method comprising: depositing a layer comprising quantum dots over a first electrode, the quantum dots including ligands attached to the outer surfaces thereof; treating the surface of the deposited layer comprising quantum dots to remove the exposed ligands; and forming a device layer thereover. Also disclosed is a device made in accordance with the disclosed method. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, and a layer comprising quantum dots between the two electrodes, the layer comprising quantum dots deposited from a dispersion that have been treated to remove exposed ligands after formation of the layer in the device. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, a layer comprising a first inorganic semiconductor material disposed between the first and second electrodes, and a plurality of quantum dots disposed between the first and second electrodes, the outer surface of the quantum dots comprising a second inorganic semiconductor material, wherein the composition of the first inorganic semiconductor material and the second inorganic semiconductor material is the same (without regard to any ligands on the outer surface of the quantum dot).
A quantum dot including a fluorine-containing ligand attached to a surface thereof and having a coating comprising a fluoropolymer over at least a portion of the outer surface of the quantum dot, A method for preparing a quantum dot with a coating comprising a fluoropolymer over at least a portion of the outer surface of the quantum dot is also disclosed. The method comprises contacting a quantum dot having a fluorine-containing ligand attached to a surface thereof with a fluoropolymer to coat the fluoropolymer over at least a portion of the outer surface of the quantum dot. A device including the quantum dot taught herein is further disclosed. An emissive material including the quantum dot taught herein is further disclosed.
C09K 11/61 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du fluor, du chlore, du brome, de l'iode ou des halogènes non spécifiés
H01L 33/04 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel
30.
SEMICONDUCTOR NANOCRYSTALS AND METHODS OF PREPARATION
A method for preparing semiconductor nanocrystals comprising adding a precursor mixture comprising one or more cation precursors, one or more anion precursors, and one or more amines to a ligand mixture including one or more acids, one or more phenol compounds, and a solvent to form a reaction mixture, wherein the molar ratio of (the one or more phenol compounds plus the one or more acids plus the one or more amine compounds) to the one or more cations initially included in the reaction mixture is greater than or equal to about 6, and heating the reaction mixture at a temperature and for a period of time sufficient to produce semiconductor nanocrystals having a predetermined composition. Methods for forming a buffer layer and/or an overcoating layer there over are also disclosed. Semiconductor nanocrystals may include one or more Group IMA and one or more Group VA elements.
An illumination device including a light source positioned at the distal end of a reflecting unit and a heat sink light transmissive substrate including quantum dots positioned at the proximal end of the reflecting unit with the reflecting unit having one or more reflecting side walls and a reflecting bottom wall and with the light source being separated a distance from the light transmissive substrate including quantum dots. In certain embodiments, the light source is an LED.
F21V 29/00 - Protection des dispositifs d'éclairage contre les détériorations thermiquesDispositions de refroidissement ou de chauffage spécialement adaptées aux dispositifs ou systèmes d'éclairage
32.
DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS & METHOD
A method of making a device comprising semiconductor nanocrystals is disclosed. The method comprises forming a first layer capable of transporting charge over a first electrode, wherein forming the first layer comprises disposing a metal layer over the first electrode and oxidizing at least the surface of the metal layer opposite the first electrode to form a metal oxide, disposing a layer comprising semiconductor nanocrystals over the oxidized metal surface, and disposing a second electrode over the layer comprising semiconductor nanocrsytals. Also disclosed is a device comprising a layer comprising semiconductor nanocrystals disposed between a first electrode and a second electrode. A device can be a light-emitting device. A device can be a photodetector.
A device comprising an arrangement of device materials and a layer comprising a material with heat-dissipating properties disposed over at least a portion thereof is disclosed. The device can further include an interleave layer disposed between the top surface of the arrangement of device materials and the layer comprising a material with heat-dissipating properties. A barrier layer may further be included between the arrangement of device materials and the layer comprising a material with heat-dissipating properties. Methods are also disclosed. In certain embodiments, a device includes quantum confined semiconductor nanoparticles.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
Systems and methods are described that relate to quantum dot (QD) structures for lighting applications. In particular, quantum dots and quantum dot containing inks (comprising mixtures of different wavelength quantum dots) are synthesized for desired optical properties and integrated with an LED source to create a trichromatic white light source. The LED source may be integrated with the quantum dots in a variety of ways, including through the use of a small capillary filled with quantum dot containing ink or a quantum dot containing film placed appropriately within the optical system. These systems may result in improved displays characterized by higher color gamuts, lower power consumption, and reduced cost.
A method for preparing semiconductor nanocrystals: reacting cation precursor and anion precursor in a mixture including on or more acids, phenol compounds, and a solvent to produce semiconductor nanocrystals having a predetermined composition by reacting the reaction mixture at a temperature and for a period of time. A method for forming a coating on at Ieast a portion of a population of semiconductor nanocrystals: forming a first mixture including a population of semiconductor nanocrystals, one or more amine compounds, and a first solvent; adding cation precursor and anion precursor to the first mixture, wherein the temperature of the first mixture during addition of the precursors is sufficient for growing a semiconductor material comprising the cation and anion on at Ieast a portion of an outer surface of at Ieast a portion of the population of semiconductor nanocrystals.
A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. The layer comprising quantum dots can be preferably fixed in the absence or substantial absence of oxygen. Also disclosed is a method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux. Also disclosed is a method of making a film including a layer comprising quantum dots, the method comprising forming a layer comprising quantum dots over a carrier substrate, fixing the layer comprising quantum dots formed over the carrier substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. The layer comprising quantum dots can be preferably fixed in the absence or substantial absence of oxygen. Also disclosed is a method of preparing a device component including a layer comprising quantum dots, the method comprising forming a layer comprising quantum dots over a layer comprising a charge transport material, exposing the layer comprising quantum dots to small molecules and light flux. Devices, device components, and films are also disclosed.
An optical component is disclosed that comprises a first substrate, an optical material comprising quantum confined semiconductor nanoparticles disposed over a predetermined region of a first surface of the first substrate, a layer comprising an adhesive material disposed over the optical material and any portion of the first surface of the first substrate not covered by the optical material, and a second substrate disposed over the layer comprising an adhesive material, wherein the first and second substrates are sealed together. In certain embodiments, the optical component further includes a second optical material comprising quantum confined semiconductor nanoparticles disposed between the layer comprising the adhesive material and the second substrate. Method are also disclosed. Also disclosed are products including the optical component.
A device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a first electrode and a second electrode, a layer comprising quantum dots disposed between the first electrode and the second electrodes, and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and a first layer in the device. In certain embodiments, a second interfacial layer is optionally further disposed on the surface of the layer comprising quantum dots opposite to the first interfacial layer. In certain embodiments, a device comprises a light-emitting device. Other light emitting devices and methods are disclosed.
The present invention relates to a particle comprising nanoparticles encapsulated within a host material, wherein the particle includes a coating disposed over at least a portion of the outer surface of the particle. In certain embodiments, nanoparticles have light-emissive properties. The coating can comprise a resin having low oxygen permeability and coating comprises a polyvinyl alcohol compound wherein the polyvinyl alcohol compound can optionally include one or more substituent groups, which can be the same or different. In preferred embodiments, a nanoparticle comprises a semiconductor nanocrystal. In certain embodiments, a host material comprises a polymer or an inorganic material.
The present invention relates to a formulation comprising a medium, one or more stabilizers, and one or more particles comprising nanoparticles included within a host material. In certain embodiments, a stabilizer comprises a HALS stabilizer. In certain embodiments, a stabilizer comprises a UVA stabilizer. In certain embodiments, the formulation includes a HALS stabilizer and a UVA stabilizer. In certain embodiments, nanoparticles have light-emissive properties. Other embodiments relate to a powder obtainable from a formulation of the invention, a composition including a powder of the invention, a coating comprising a formulation of the invention, and products and applications including a particle of the invention. In preferred embodiments, a nanoparticle comprises a semiconductor nanocrystal. In certain embodiments, a host material comprises a polymer. In certain embodiments, a host material comprises an inorganic material. A raw batch formulation and particle obtainable therefrom is also disclosed.
A white-light emitting lighting device comprising one or more light emitting light sources (preferably solid state semiconductor light emitting diodes) that emit off-white light during operation, wherein the off-white light includes a spectral output including at least one spectral component in a first spectral region from about 360 nm to about 475 nm, at least one spectral component in a second spectral region from about 475 nm to about 575 nm, and at least one deficiency in at least one other spectral region, and an optical component that is positioned to receive at least a portion of the off-white light generated by the one or more light sources, the optical component comprising an optical material for converting at least a portion of the off-white light to one or more predetermined wavelengths, at least one of which has a wavelength in at least one deficient spectral region.
An optical material comprising quantum confined semiconductor nanoparticles having an improved solid state photoluminescent efficiency is disclosed. Also disclosed is an optical component including an optical material comprising quantum confined semiconductor nanoparticfes having an improved solid state photoluminescent efficiency. Further disclosed are methods for treating an optical material comprising quantum confined semiconductor nanoparticles. Further disclosed are methods for treating an optical component including an optical material comprising quantum confined semiconductor nanoparticles. One method comprises exposing the optical material to a light flux and heat for a period of time sufficient to increase the solid state photoluminescent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photoluminescent quantum efficiency value. Another method comprises exposing an optical component comprising quantum confined semiconductor nanoparticles to a light flux and heat for a period of time sufficient to increase the solid state photoluminescent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photoluminescent quantum efficiency value. Additional methods are disclosed, as are optical materials and optical components obtained by such methods. Devices including optical materials and/or optical components are also disclosed.
An optical material comprising quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles are in a charge neutral state is disclosed. Also disclosed is an optical component including an optical materia] comprising quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles are in a charge neutral state. Further disclosed is an optical material obtainable by at least partially encapsulating an optical material comprising quantum confined semiconductor nanoparticles and irradiating the at least partially encapsulated optical material with a light flux for a period of time sufficient to neutralize the charge on at least a portion of the nanoparticles. Further enclosed is an optical component obtainable by at least partially encapsulating an optical component including an optical material comprising quantum confined semiconductor nanoparticles and irradiating the at least partially encapsulated optical material with a light flux for a period of time sufficient to neutralize the charge on at least a portion of the nanoparticles. Methods are also disclosed.
B82B 3/00 - Fabrication ou traitement des nanostructures par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
G02B 5/00 - Éléments optiques autres que les lentilles
C09K 11/00 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes
C08L 101/00 - Compositions contenant des composés macromoléculaires non spécifiés
44.
NANOPARTICLE INCLUDING MULTI-FUNCTIONAL LIGAND AND METHOD
A nanoparticle including an inorganic core comprising at least one metal and/or at least one semi-conductor compound comprising at least one metal includes a coating or shell disposed over at least a portion of a surface of the core. The nanoparticle further includes a ligand attached to a surface of the coating. The ligand is represented by the formula: X-Sp-Z, wherein: X represents: a primary amine group, a secondary amine group, a urea, a thiourea, an imidizole group, an amide group, a carboxylic acid or carboxylate group; a phosphoric acid group, a phosphate group, a phosphite group, a phosphinite group, a phosphine group, an arsenic acid group, an arsenate group, or an arsine group; Sp represents a group capable of allowing a transfer of charge or an insulating group; and Z represents a multifunctional group.
The present inventions relate to optical components which include quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles include a ligand attached to a surface thereof, the ligand being represented by the formula X-Sp-Z, wherein: X represents: a primary amine group, a secondary amine group, a urea, a thiourea, an imidizole group, an amide group, a carboxylic acid or carboxylate group; a phosphoric acid group, a phosphate group, a phosphite group, a phosphinic acid group, a phosphinate group, a phosphine oxide group, a phosphinite group, a phosphine group, an arsenic acid group, an arsenate group, an arsenous acid group, an arsenite group, an arsinic acid group, an arsine oxide group, or an arsine group; Sp represents a group capable of allowing a transfer of charge or an insulating group; and Z represents a multifunctional group including three or more functional groups capable of communicating a specific property or chemical reactivity to the nanoparticle, wherein at least three of the functional groups are chemically distinct, and wherein Z is not reactive upon exposure to light. As used herein, the term "optical components" includes, but is not limited to, optical components, systems including optical components, lamps including optical components, devices including optical components, films useful in the foregoing, inks useful in making the foregoing, and compositions useful in the foregoing.
C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger
B82B 1/00 - Nanostructures formées par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
46.
SOLID STATE LIGHTING DEVICES INCLUDING QUANTUM CONFINED SEMICONDUCTOR NANOPARTICLES
A solid state lighting device including a light source capable of emitting white light including a blue spectral component and having a deficiency in a spectral region, and an optical component that is positioned to receive at least a portion of the light generated by the light source, the optical component comprising an optical material for converting at least a portion of the blue spectral component of the light to one or more predetermined wavelengths such that light emitted by the solid state lighting device includes light emission from the light source supplemented with light emission at one or morepredetermined wavelengths, wherein the optical material comprises quantum confined semiconductor nanoparticles. Also disclosed is lighting fixture, a cover plate for a lighting fixture and a method.
The present invention relates to nanoparticles encapsulated within a host material. In one embodiment, a particle comprises a host material including nanoparticles with light-transmissive properties dispersed therein. Other embodiments relate to a powder comprising a particle of the invention, a composition including a particle of the invention, a formulation including a particle of the invention, a coating comprising a particle of the invention, a method for making a particle of the invention, and products and applications including a particle of the invention. In preferred embodiments, a nanoparticle comprises a semiconductor nanocrystal. In preferred embodiments, a host material comprises a wax.
C30B 7/00 - Croissance des monocristaux à partir de solutions en utilisant des solvants liquides à la température ordinaire, p. ex. à partir de solutions aqueuses
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
48.
OPTICAL COMPONENTS, SYSTEMS INCLUDING AN OPTICAL COMPONENT, AND DEVICES
A lighting system including a light source capable of generating light, and an optical component optically coupled to receive at least a portion of the light generated by the light source and convert at least a portion of the light so received to a predetermined wavelength such that the light emitted by the lighting system includes light emission from the light source supplemented with light emission at the predetermined wavelength, wherein the optical component including an optical material comprises quantum confined semiconductor nanoparticles. Also disclosed is an optical component comprising a light guide plate and an optical material disposed over at least a portion of a surface of the light guide plate, the optical material comprising quantum confined semiconductor nanoparticles capable of emitting light in a predetermined spectral region. Devices are also disclosed.
G02B 6/10 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques
A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injecting electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.
G01N 21/63 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité optiquement
50.
FLEXIBLE DEVICES INCLUDING SEMICONDUCTOR NANOCRYSTALS, ARRAYS, AND METHODS
The present invention relates to flexible devices including semiconductor nanocrystals, arrays including such devices, systems including the foregoing, and related methods. In one embodiment, a flexible light-emitting device includes a flexible substrate including a first electrode, an emissive layer comprising semiconductor nanocrystals disposed over the substrate, and second electrode disposed over the emissive layer comprising semiconductor nanocrystals, wherein, when the device is curved, the emissive layer comprising semiconductor nanocrystals lies substantially in the neutral plane of the device. In another embodiment, a light-emitting device includes an emissive layer comprising semiconductor nanocrystals disposed between two flexible substrates, a first electrode disposed over the emissive layer comprising semiconductor nanocrystals, and a second electrode disposed under the emissive layer comprising semiconductor nanocrystals. In certain preferred embodiments, at least one charge transport layer is disposed between one of the electrodes and the layer comprising semiconductor nanocrystals.
A nanoparticle including an inorganic core comprising at least one metal and/or at least one semi-conductor compound comprising at least one metal includes a coating or shell disposed over at least a portion of a surface of the core. The coating can include one or more layers. Each layer of the coating can comprise a metal and/or at least one semiconductor compound. The nanoparticle further includes a ligand attached to a surface of the coating. The ligand is represented by the formula: X-Sp-Z, wherein X represents, e.g., a primary amine group, a secondary amine group, a urea, a thiourea, an imidizole group, an amide group, a phosphonic or arsonic acid group, a phosphinic or arsinic acid group, a phosphate or arsenate group, a phosphine or arsine oxide group; Sp represents a spacer group, such as a group capable of allowing a transfer of charge or an insulating group; and Z represents: (i) a reactive group capable of communicating specific chemical properties to the nanocrystal as well as provide specific chemical reactivity to the surface of the nanocrystal, and/or (ii) a group that is cyclic, halogenated, or polar a-protic. In certain embodiments, at least two chemically distinct ligands are attached to an surface of the coating, wherein the at least two ligands (I and II) are represented by the formula: X-Sp-Z. In ligand (I) X represents a phosphonic, phosphinic, or phosphategroup and in ligand (II) X represents a primary or secondary amine, or an imidizole, or an amide; In both ligands (I) and (II) Sp, which can be the same or different in the two compounds, represents a spacer group, such as a group capable of allowing a transfer of charge or an insulating group; Z, which can be the same or different in the two compounds, is a group chosen from among groups capable of communicating specific chemical properties to the nanoparticle as well as provide specific chemical reactivity to the surface of the nanoparticle. In preferred embodiments, the nanoparticle includes a core comprising a semiconductor material.
A component including a substrate, at least one layer including a color conversion material comprising quantum dots disposed over the substrate, and a layer comprising a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material comprising quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein.
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
53.
COMPOSITIONS AND METHODS INCLUDING DEPOSITING NANOMATERIAL
An ink composition comprising a nanomaterial and a liquid vehicle, wherein the liquid vehicle comprises a composition including one or more functional groups that are capable of being cross-linked is disclosed. An ink composition comprising a nanomaterial, a liquid vehicle, and scatterers is also disclosed. An ink composition comprising a nanomaterial and a liquid vehicle, wherein the liquid vehicle comprises a perfluorocompound is further disclosed. A method for inkjet printing an ink including nanomaterial and a liquid vehicle with a surface tension that is not greater than about 25 dyne/cm is disclosed. In certain preferred embodiments, the nanomaterial comprises semiconductor nanocrystals. Devices prepared from inks and methods of the invention are also described.
B82B 1/00 - Nanostructures formées par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
54.
QUANTUM DOT-BASED LIGHT SHEETS USEFUL FOR SOLID-STATE LIGHTING
A quantum dot-based light sheet or film is disclosed. In certain embodiments, a quantum dot-based light sheet includes one or more films or layers comprising quantum dots (QD) disposed on at least a portion of a surface of a waveguide and one or more with LEDs optically coupled to the waveguide. The film or layer can be continuous or discontinuous. The film or layer can optionally further include a host material in which the quantum dots are dispersed. A solid state light device including a quantum-dot based sheet or film or optical component disclosed herein is also provided.
A composition useful for altering the wavelength of visible or invisible light is disclosed. The composition comprising a solid host material and quantum confined semiconductor nanoparticles, wherein the nanoparticles are included in the composition in amount in the range from about 0.001 to about 15 weight percent based on the weight of the host material. The composition can further include scatterers. An optical component including a waveguide component and quantum confined semiconductor nanoparticles is also disclosed. A device including an optical component is disclosed. A system including an optical component including a waveguide component and quantum confined semiconductor nanoparticles and a light source optically coupled to the waveguide component is also disclosed. A decal, kit, ink composition, and method are also disclosed. A TFEL including quantum confined semiconductor nanoparticles on a surface thereof is also disclosed.
G02B 6/10 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques
56.
PHOTOVOLTAIC DEVICES INCLUDING QUANTUM DOT DOWN-CONVERSION MATERIALS USEFUL FOR SOLAR CELLS AND MATERIALS INCLUDING QUANTUM DOTS
A photovoltaic device includes a heat transfer material comprising a dispersion of down- conversion quantum dots in a host medium. In certain embodiments, the host medium comprises a liquid or fluid. In certain embodiments, a heat transfer material comprises a dispersion of down- conversion quantum dots in a host medium comprising one or more heat-transfer fluids. A heat transfer material including quantum dots is also disclosed. Such devices and heat transfer materials can be useful for light energy conversion, e.g., in solar cells. Solar cells are also disclosed.
A nanocrystal comprising a semiconductor material comprising one or more elements of Group IMA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material disposed on at least a portion of the nanocrystal core, wherein the semiconductor material comprises at least three chemical elements and is obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. Populations of nanocrystals, method for preparing nanocrystals, compositions, and devices including nanocrystals are also disclosed.
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
B82B 1/00 - Nanostructures formées par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
A method of depositing a nanomaterial onto a donor surface comprises depositing a composition comprising nanomaterial onto a donor surface from a micro-dispenser. In another aspect of the invention there is provided a method of depositing a nanomaterial onto a substrate. Methods of making a device including nanomaterial are disclosed. An article of manufacture comprising nanomaterial and a material capable o transporting charge disposed on a backing member is disclosed.
B32B 9/04 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes comprenant une telle substance comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B22F 1/00 - Poudres métalliquesTraitement des poudres métalliques, p. ex. en vue de faciliter leur mise en œuvre ou d'améliorer leurs propriétés
59.
METHODS FOR DEPOSITING NANOMATERIAL, METHODS FOR FABRICATING A DEVICE, AND METHODS FOR FABRICATING AN ARRAY OF DEVICES
A method comprising depositing an ink comprising a nanomaterial and a liquid vehicle from a micro- dispenser onto a layer of a device is disclosed. A method comprising depositing an ink comprising a nanomaterial and a liquid vehicle from a micro-dispenser onto a material capable of transporting charge in a predetermined arrangement is also disclosed. Methods for fabricating devices including nanomaterials are also disclosed. In certain preferred embodiments, the nanomaterial comprises semiconductor nanocrystals. In certain preferred embodiments, a micro-dispenser comprises an inkjet printhead.
A method comprising depositing an ink comprising a nanomaterial, a material capable of transporting charge, and a liquid vehicle from a micro-dispenser onto a layer of a device is disclosed. A method comprising depositing an ink comprising a nanomaterial, a material capable of transporting charge, and a liquid vehicle from a micro-dispenser onto a second material capable of transporting charge in a predetermined arrangement is also disclosed. In certain preferred embodiments, the nanomaterial comprises semiconductor nanocrystals. In certain preferred embodiments, a micro-dispenser comprises an inkjet printhead. Methods for fabricating devices including a nanomaterial and method for fabricating an array of devices including a nanomaterial are also disclosed. An ink composition including a nanomaterial, a material capable of transporting charge, and a liquid vehicle is also disclosed.
C12Q 1/68 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismesCompositions à cet effetProcédés pour préparer ces compositions faisant intervenir des acides nucléiques
C07H 21/04 - Composés contenant au moins deux unités mononucléotide comportant chacune des groupes phosphate ou polyphosphate distincts liés aux radicaux saccharide des groupes nucléoside, p. ex. acides nucléiques avec le désoxyribosyle comme radical saccharide
61.
ELECTROLUMINESCENT DISPLAY USEFUL FOR DISPLAYING A PREDETERMINED PATTERN
An electroluminescent display comprising semiconductor nanocrystals, wherein the semiconductor nanocrystals are selected to emit light at a predetermined wavelength and are disposed in a predetermined pattern. In certain embodiments, semiconductor nanocrystals that emit light at different predetermined wavelengths are disposed in the display to create a predetermined multi-color pattern.
G09G 3/30 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents
62.
IMPROVED COMPOSITES AND DEVICES INCLUDING NANOPARTICLES
A composite including a first layer comprising nanoparticles, at least a portion of which include a ligand attached to a surface of a nanoparticle, and a second layer disposed over a predetermined area of the first layer, wherein the second layer is continuous or uninterrupted by voids across the predetermined area, and has a thickness less than or equal to about 30 nm. In certain preferred embodiments, there is a chemical affinity between the ligand and the second layer. A device including the above composite and related methods are also disclosed.
H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
B32B 27/04 - Produits stratifiés composés essentiellement de résine synthétique comme substance d'imprégnation, de collage, ou d'enrobage
B82B 1/00 - Nanostructures formées par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
63.
BLUE EMITTING SEMICONDUCTOR NANOCRYSTALS AND COMPOSITIONS AND DEVICES INCLUDING SAME
A semiconductor nanocrystal capable of emitting blue light upon excitation. Also disclosed are devices, populations of semiconductor nanocrystals, and compositions including a semiconductor nanocrystal capable of emitting blue light upon excitation. In one embodiment, a semiconductor nanocrystal capable of emitting blue light including a maximum peak emission at a wavelength not greater than about 470 nm with a photoluminescence quantum efficiency greater than about 65% upon excitation. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting blue light with a photoluminescence quantum efficiency greater than about 65% upon excitation. In a further embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation.
B32B 1/00 - Produits stratifiés ayant une forme non plane
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
64.
SEMICONDUCTOR NANOCRYSTALS AND COMPOSITIONS AND DEVICES INCLUDING SAME
A semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. The present invention further relates to compositions and devices including semiconductor nanocrystals capable of emitting light with an improved photoluminescence quantum efficiency. A semiconductor nanocrystal wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 50% upon excitation and including a maximum peak emission with a FWHM less than 20 nm is disclosed. Also disclosed are a device, a population of semiconductor nanocrystals, and a composition including a semiconductor nanocrystal wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 50% upon excitation and including a maximum peak emission with a FWHM less than 20 nm. A semiconductor nanocrystal that is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 90%. Also disclosed are a device, a population, and a composition including a semiconductor nanocrystal.
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
B82B 1/00 - Nanostructures formées par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
65.
LIGHT EMITTING DEVICES AND DISPLAYS WITH IMPROVED PERFORMANCE
Light emitting devices and devices with improved performance are disclosed. In one embodiment, a light emitting device includes an emissive material disposed between a first electrode, and a second electrode, wherein the emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation, wherein the light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. Also disclosed is a display including at least one light emitting device including an emissive material disposed between a first electrode, and a second electrode, wherein the at least one light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. In another embodiment, a light emitting device includes an emissive material disposed between a first electrode and a second electrode. The emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation. The device further includes a first spacer material disposed between the emissive material and the first electrode. In certain embodiments, the device further includes a first material capable of transporting charge disposed between the emissive material and the first electrode, wherein the first spacer material is disposed between the emissive material and the first electrode. In certain embodiments, for example, light emitting devices can have a maximum peak emission in a range from about 380nm to about 500nm. In certain embodiments, the light emitting device can have a maximum peak emission peak in the range from about 450nm to about 490nm. Displays including light emitting devices are also disclosed.
A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%.
H01L 23/28 - Encapsulations, p. ex. couches d’encapsulation, revêtements
B32B 9/00 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes
B82B 1/00 - Nanostructures formées par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
67.
A COMPOSITE INCLUDING NANOPARTICLES, METHODS, AND PRODUCTS INCLUDING A COMPOSITE
A composite comprising a first layer comprising a first material including nanoparticles dispersed therein, wherein the first material comprises a material capable of transporting charge, a second layer comprising a second material, and a backing element that is removably attached to the uppermost layer of the composite or the lowermost layer of the composite. In certain preferred embodiments, a least a portion of the nanoparticles include a ligand attached to a surface thereof. Methods are also disclosed. Products including a composite is further provided. Composite materials can be particularly well-suited for use, for example, in products useful in various optical, electronic, optoelectronic, magnetic, or catalytic devices.
B82B 1/00 - Nanostructures formées par manipulation d’atomes ou de molécules, ou d’ensembles limités d’atomes ou de molécules un à un comme des unités individuelles
68.
MATERIALS,THIN FILMS,OPTICAL FILTERS, AND DEVICES INCLUDING SAME
A material is disclosed which possesses at least two of the following characteristics: (a) is optically transparent at a wavelength in the range from about 1500 nm to about 1560 nm; (b) has a 1/n dn/dt greater than that of silicon, (c) has an extinction coefficient, k, less than 10'3. In certain preferred embodiments, the material has the following characteristics: (a) 1/n dn/dt greater than that of silicon, and (b) an extinction coefficient, k, less than 10'3 at 1550 nm. In another aspect, a material comprising semiconductor nanocrystals, wherein the semiconductor nanocrystals are capable of displaying thermo-optic effects in bulk form and being sufficiently non-absorbing at a predetermined wavelength to be optically transparent at that wavelength is disclosed. In a preferred embodiment, the predetermined wavelength is about 155,0 nm. Thin film, optical filters, and devices are also disclosed.
Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2 %; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm2. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a peak luminescent efficiency of at least about 1.5 lumens per watt. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a luminescent efficiency of at least about 1.5 lumens per watt when measured at a current density of 5 milliamps/square centimeter. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has a peak external quantum efficiency of at least about 1.1 percent. Further disclosed is a light- emitting device comprising a plurality of semiconductor nanocrystals, wherein the device has a luminescent efficiency of at least about 3 lumens per watt when measured at a current density of 5 mA/cm2. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has an external quantum efficiency of at least about 2% when measured at a current density of 5 mA/cm2. Other light-emitting devices and displays with improved performance are disclosed. Also disclosed are methods for preparing and for purifying semiconductor nanocrystals.
Methods for depositing material and/or nanomaterial are disclosed. Also disclosed are methods of making devices including nanomaterials, systems useful for depositing materials and/or nanomaterials, surface treated articles for depositing material and/or nanomaterial onto a substrate, and surface treated transfer surfaces.
B41F 3/34 - Presses à cylindre, c.-à-d. presses comportant nécessairement au moins un cylindre coopérant avec au moins un marbre plan de structure spéciale ou pour emploi particulier pour la lithographie pour l'impression offset
B05D 5/06 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir des effets multicolores ou d'autres effets optiques
B05D 5/00 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers
B05D 1/02 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces réalisés par pulvérisation
A method of depositing a nanomaterial onto a donor surface comprises applying a composition comprising nanomaterial to a donor surface. In another aspect of the invention there is provided a method of depositing a nanomaterial onto a substrate. Methods of making a device including nanomaterial are disclosed. An article of manufacture comprising nanomaterial disposed on a backing member is disclosed.
Methods for depositing material and nanomaterial onto a substrate are disclosed. Also disclosed are methods of making devices including nanomaterials, and a system useful for depositing materials and nanomaterials.
B41F 3/34 - Presses à cylindre, c.-à-d. presses comportant nécessairement au moins un cylindre coopérant avec au moins un marbre plan de structure spéciale ou pour emploi particulier pour la lithographie pour l'impression offset
B05D 5/06 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir des effets multicolores ou d'autres effets optiques
B05D 5/00 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers
B05D 1/02 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces réalisés par pulvérisation
73.
COMPOSITION INCLUDING MATERIAL, METHODS OF DEPOSITING MATERIAL, ARTICLES INCLUDING SAME AND SYSTEMS FOR DEPOSITING MATERIAL
Methods for depositing nanomaterial (102) onto a substrate (104) are disclosed. Also disclosed are compositions useful for depositing nanomaterial, methods of making devices including nanomaterials, and a system and devices useful for depositing nanomaterials.
B05D 5/00 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers
B05C 1/00 - Appareillages dans lesquels un liquide ou autre matériau fluide est appliqué à la surface de l'ouvrage par contact avec un élément portant le liquide ou autre matériau fluide, p. ex. un élément poreux imprégné du liquide à appliquer sous forme de revêtement
C09D 5/00 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte
B41K 1/38 - Dispositifs d'encrageSurfaces de timbrage
An article comprising an array of semiconductor nanocrystals arranged in a predetermined pattern, wherein the semiconductor nanocrystals are capable of generating light of one or more predetermined wavelengths in response to ambient light. In one embodiment the semiconductor nanocrystals emit light of different predetermined wavelengths.
A device including semiconductor nanocrystals and a layer comprising a doped organic material disposed over the substrate and in electrical connection with at least one semiconductor nanocrystals is disclosed. Methods for making the device and for improving the efficiency of a device are also disclosed.
H01L 31/042 - Modules PV ou matrices de cellules PV individuelles
H01L 31/00 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
77.
DISPLAYS INCLUDING SEMICONDUCTOR NANOCRYSTALS AND METHODS OF MAKING SAME
A display comprises a substrate and a light-emitting device disposed on the substrate, wherein the substrate comprises a semiconducting material and a circuit for controlling the light-emitted from the light-emitting device. A light-emitting device includes a light-emitting material comprising semiconductor nanocrystals and an electrode in electrical connection with the light-emitting material on a side thereof remote from the substrate.
brevets