Abrégé

A bias compensation circuit includes a power detection circuit and a bias circuit. The power detection circuit includes first and second power distribution circuits, first and second detection circuits, first and second conversion circuits, and a summing circuit. The first and second power distribution circuits respectively generate first and second input signals according to an input signal. The first and second detection circuits generate first and second power signals according to first and second input signals, respectively. The first and second conversion circuits generate first and second power currents according to first and second power signals, respectively. The summing circuit receives the first and second power signals to generate a power signal. The bias circuit receives the power signal to adjust a bias signal and provide the bias signal to the amplifier circuit. An amount of variation of the bias signal per power unit is adjustable.

Classes IPC  ?

• H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
• H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation

Abrégé

A bias compensation circuit that receives a detection signal from a detection circuit is provided. The detection circuit is configured to detect a radio frequency signal in an amplifier circuit. The bias compensation circuit includes a conversion circuit and a bias circuit. The conversion circuit is coupled to the detection circuit, and is used to adjust a phase or an amplitude of the detection signal to generate an injection signal, wherein the injection signal is a current signal. The bias circuit is coupled to the conversion circuit, and is used to generate a bias signal to the amplifier circuit based on the injection signal, wherein the bias signal varies with the detection signal.

Classes IPC  ?

• H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
• H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
• H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie

Abrégé

Disclosed is a temperature sensing structure configured to sense a temperature of an object to be tested. The temperature sensing structure includes a temperature sensing element and a thermal conductive component. The thermal conductive component is coupled between the temperature sensing element and the object to be tested for thermal conduction. The thermal conductive component includes a first metal body, a second metal body, and a metal-insulator-metal structure. The first metal body is coupled to the temperature sensing element, the second metal body is coupled to the object to be tested, and the metal-insulator-metal structure is connected between the first metal body and the second metal body.

Classes IPC  ?

• H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
• H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie

Abrégé

In an amplification device, a signal input terminal receives an input signal. A signal output terminal outputs an amplified signal. An amplification circuit is coupled between the signal input terminal and the signal output terminal, and includes a first transistor and a second transistor coupled in a cascode manner. A third transistor receives a first reference current. A fourth transistor receives a second reference current. A fifth transistor receives a third reference current and is coupled to the fourth transistor. An operational amplifier is coupled to the third transistor and the amplification circuit. A distance from the fourth transistor to a transistor in the amplification circuit is less than a distance from the fifth transistor to the same transistor. The fourth transistor is used to detect temperature changes for compensation.

Classes IPC  ?

• H03F 1/22 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de couplage dit "cascode", c.-à-d. étage avec cathode ou émetteur à la masse suivi d'un étage avec grille ou base à la masse respectivement
• H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation

Abrégé

An electrostatic discharge (ESD) protection circuit is coupled between first and second voltage terminals, and further includes first and second bipolar junction transistors (BJTs). First terminals of the first and second BJTs are coupled to the first voltage terminal and the second voltage terminal respectively. Second terminals of the first and second BJTs are coupled to each other. Control terminals of the first and second BJTs are coupled to each other. A breakdown voltage of a junction between the first terminal and the control terminal of the first BJT is greater than a breakdown voltage of a junction between the second terminal and the control terminal of the first BJT. A breakdown voltage of a junction between the first terminal and the control terminal of the first BJT is greater than a breakdown voltage of a junction between the second terminal and the control terminal of the first BJT.

Classes IPC  ?

• H02H 9/04 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension

Abrégé

An oscillation circuit includes an oscillator and a buffer coupled to the oscillator. The oscillator is used to provide at least one oscillation signal according to an analog control signal. The buffer includes at least one input terminal, at least one output terminal, a buffer unit, a first capacitor array and a second capacitor array. The at least one input terminal is used to receive the at least one oscillation signal. The at least one output terminal is used to provide at least one buffered signal. The buffer unit is coupled between the at least one input terminal and the at least one output terminal. The first capacitor array is used to change a first equivalent capacitance value according to at least one first digital signal. The second capacitor array is used to change a second equivalent capacitance value according to at least one second digital signal.

Classes IPC  ?

• H03B 5/12 - Éléments déterminant la fréquence comportant des inductances ou des capacités localisées l'élément actif de l'amplificateur étant un dispositif à semi-conducteurs

Abrégé

A mixed radio frequency filter includes a first transceiving terminal, a second transceiving terminal, a first series capacitor, a second series capacitor, a first series resonator, and a second series resonator. The first series capacitor, the first series resonator, the second series resonator, and the second series capacitor are coupled in series and in the order listed between the first transceiving terminal and the second transceiving terminal.

Classes IPC  ?

• H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
• H03H 9/00 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques

Abrégé

An amplifier includes a signal input terminal, a signal output terminal, an amplification circuit, and at least one variable voltage generation circuit. The signal input terminal may receive an input signal. The signal output terminal may output an amplified signal. An transistor of the amplification circuit includes a first terminal, a second terminal, a control terminal, and a body terminal, where the control terminal is coupled to the signal input terminal, the second terminal is coupled to the signal output terminal, and the body terminal is floating. The at least one variable voltage generation circuit is coupled to the transistor of the amplification circuit. During a transition period, a first voltage difference presents between the second terminal and the first terminal of the transistor, and during a steady period, a second voltage difference presents therebetween. The first voltage difference is greater than the second voltage difference.

Classes IPC  ?

• H03F 1/26 - Modifications des amplificateurs pour réduire l'influence du bruit provoqué par les éléments amplificateurs
• H03F 3/21 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs

Abrégé

A radio frequency filter includes a first transceiving terminal, a second transceiving terminal, a first series resonator, at least one first parallel resonator, at least one second parallel resonator, a first capacitor, a second capacitor, a first inductor, a second inductor and a third inductor. The at least one first parallel resonator is coupled in parallel with the first capacitor and couples the first series resonator to a first node. The at least one second parallel resonator is coupled in parallel with the second capacitor and couples the first series resonator to a second node. The first inductor is coupled to the first transceiving terminal. The second inductor is coupled to the second transceiving terminal. The third inductor is coupled between the first inductor and a reference node and between the second inductor and the reference node.

Classes IPC  ?

• H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
• H03H 9/00 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques
• H03H 9/56 - Filtres à cristaux monolithiques

Abrégé

A wireless signal apparatus and a wireless signal detection are provided. The wireless signal apparatus comprises an antenna apparatus. The antenna apparatus comprises a transmitting antenna array and a receiving antenna array arranged in a first plane. The antenna apparatus forms a narrow-beamwidth antenna radiation pattern, the narrow-beamwidth antenna radiation pattern forms a flattened detection area, and the flattened detection area forms a second plane substantially perpendicular to the first plane. The wireless signal apparatus is configured to detect spatial information of an external object within the flattened detection area, and the spatial information comprises only two-dimensional spatial information in the second plane.

Classes IPC  ?

• H01Q 25/00 - Antennes ou systèmes d'antennes fournissant au moins deux diagrammes de rayonnement
• H01Q 21/06 - Réseaux d'unités d'antennes, de même polarisation, excitées individuellement et espacées entre elles
• H04B 1/40 - Circuits

Abrégé

A method of fabricating an acoustic wave device includes providing a first substrate, the first substrate comprising a first bulkplate and a first frame, and further comprising a first electrode, a piezoelectric layer, and a second electrode stacked in sequence. The first frame is disposed on the first bulkplate and at least partially surrounds the first electrode. The first substrate is thinned such that the first electrode is exposed from a first surface of the first substrate. A second substrate comprises a second bulkplate and a recess, and the recess is recessed from a second surface of the second substrate. The first surface of the first substrate and the second surface of the second substrate are bonded together, and the recess, the first electrode, the piezoelectric layer, and the second electrode at least partially overlap when viewed along a vertical direction to form an overlapping area.

Classes IPC  ?

• H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
• H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails

Abrégé

An impedance adjustment circuit and an amplifier circuit are provided. The impedance adjustment circuit includes an input terminal, an output terminal, and an impedance adjustment sub-circuit. The impedance adjustment sub-circuit includes a metal-oxide-semiconductor capacitor (MOSCAP) and a switch circuit. A first terminal of the MOSCAP is coupled to the input terminal. A control terminal of the MOSCAP receives a control signal. A control terminal of the switch circuit receives a switch control signal. A base terminal of the MOSCAP is coupled to the output terminal. A capacitance value of the impedance adjustment sub-circuit is changed by changing the switch control signal.

Classes IPC  ?

• H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
• H03F 3/213 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés

Abrégé

An acoustic wave device includes a piezoelectric substrate, a plurality of transducers, and a film. The piezoelectric substrate includes a recess, and the plurality of transducers are positioned in the recess. At least one of the plurality of transducers includes a first bus bar disposed in parallel to a first direction, a plurality of first electrodes extended in parallel to a second direction from the first bus bar, a second bus bar disposed in parallel to the first direction, and a plurality of second electrodes extended in parallel to the second direction from the second bus bar. The film covers the recess of the piezoelectric substrate.

Classes IPC  ?

• H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
• H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
• H03H 9/05 - Supports
• H03H 9/10 - Montage dans des boîtiers

Abrégé

An amplification circuit includes an input terminal, an output terminal, a first path circuit and a second path circuit. The input terminal would receive an input signal. The output terminal would output an output signal corresponding to the input signal. The first path circuit includes a co-design circuit, an amplifier circuit, a second matching element, and an electrical overstress circuit. The co-design circuit includes a first matching element. A first terminal of the co-design circuit is coupled to the input terminal. The electrical overstress circuit and the second matching element are coupled to a second terminal of the co-design circuit. The amplifier circuit is coupled between the second terminal of the co-design circuit and the output terminal. The second path circuit is coupled between the input terminal and the output terminal. The co-design circuit provides a first impedance in a first mode and a second impedance in a second mode.

Classes IPC  ?

• H03F 1/26 - Modifications des amplificateurs pour réduire l'influence du bruit provoqué par les éléments amplificateurs
• H03F 1/52 - Circuits pour la protection de ces amplificateurs
• H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
• H03F 3/21 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs

Abrégé

An oscillation signal generating circuit and an oscillation signal generating method are provided. The oscillation signal generating circuit includes a first circuit and a second circuit. The first circuit is configured to generate an output signal according to a reference clock signal and a feedback clock signal. The first circuit includes a voltage-controlled oscillator (VCO). The VCO is configured to output the output signal, and a frequency of the output signal is controlled by a control voltage. The second circuit includes a voltage compensation circuit and a maximum phase difference detector. When a maximum phase difference is detected by the maximum phase difference detector, the maximum phase difference detector controls the voltage compensation circuit to compensate the control voltage to a target voltage.

Classes IPC  ?

• H03L 7/10 - Détails de la boucle verrouillée en phase pour assurer la synchronisation initiale ou pour élargir le domaine d'accrochage
• H03L 7/093 - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence, y compris le filtrage ou l'amplification de son signal de sortie utilisant des caractéristiques de filtrage ou d'amplification particulières dans la boucle
• H03L 7/099 - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle

Abrégé

The disclosure provides a microwave sensor including a local frequency circuit, an echo path circuit and a processing circuit. In a power saving mode, the processing circuit disables the local frequency circuit, wherein the echo path circuit transmits a first radar signal to an antenna and receives a first echo signal from the antenna. In response to the processing circuit determining that an object has been detected, the microwave sensor enters a normal mode from the power saving mode. In the normal mode, the processing circuit enables the local frequency circuit, wherein the local frequency circuit transmits a second radar signal to the antenna and output a local frequency signal to the echo path circuit. The echo path circuit receives a second echo signal from the antenna. In response to the processing circuit determining that no object has been detected, the microwave sensor enters the power saving mode from the normal mode.

Classes IPC  ?

• G01S 13/04 - Systèmes déterminant la présence d'une cible

Abrégé

An amplifier circuit includes an input terminal, an output terminal, a first transistor, a second transistor, a third transistor, and a voltage tracking circuit. The input terminal would receive an input signal. The output terminal would output the amplified input signal. The control terminals of the first transistor and the second transistor are coupled to one another. The voltage tracking circuit is coupled to a first terminal and the control terminal of the first transistor, a first terminal of the second transistor, and a first terminal of the third transistor. The voltage tracking circuit regulates voltages at the first terminal of the first transistor and the first terminal of the third transistor to be substantially equal during an initial state, and then regulates voltages at the first terminal of the first transistor and the first terminal of the second transistor to be substantially equal during a stable state.

Classes IPC  ?

• H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
• H03F 3/193 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs comportant des dispositifs à effet de champ

Abrégé

A radar apparatus and a radar detecting method are provided. The radar apparatus includes a transmitting circuit, a transmitting antenna system and a receiving antenna system. The transmitting circuit is used to generate two transmission signals having different bandwidths. The transmitting antenna system is used to transmit these two transmission signals. The receiving antenna system is used to receive two reflected signals having different bandwidths. The two reflected signals are generated by the reflection of the two transmission signals by an external object. One of the two transmission signals and one of the two reflected signals are used for a first detection mode, and the other one of the two transmission signals and the other one of the two reflected signals are used for a second detection mode. The detection power of the first detection mode is greater than the detection power of the second detection mode.

Classes IPC  ?

• G01S 7/03 - Détails de sous-ensembles HF spécialement adaptés à ceux-ci, p. ex. communs à l'émetteur et au récepteur
• G01S 13/02 - Systèmes utilisant la réflexion d'ondes radio, p. ex. systèmes du type radar primaireSystèmes analogues

Abrégé

An acoustic wave device includes a piezoelectric substrate and a series-coupled transducer set. The piezoelectric substrate has a first surface. The series-coupled transducer set includes a first transducer and a second transducer coupled in series, and disposed on the first surface of the piezoelectric substrate. The first transducer includes a first electrode and a common electrode. The second transducer includes a second electrode and the common electrode. The common electrode is floating, and the first transducer and the second transducer are coupled in series through the common electrode.

Classes IPC  ?

• H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
• H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
• H03H 9/25 - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface

Abrégé

The disclosure provides an electrostatic discharge (ESD) protection device for protecting a core circuit coupled between a first power rail and a second power rail. The ESD protection device includes a first ESD clamp circuit, a second ESD clamp circuit, and a pull-up element. The first ESD clamp circuit is coupled between the first power rail and a common node. The second ESD clamp circuit is coupled between the common node and the second power rail. A first terminal of the pull-up element is coupled to the common node. A second terminal of the pull-up element is coupled to a signal transmission wire. The core circuit is coupled to a signal connection pad through the signal transmission wire.

Classes IPC  ?

• H02H 9/04 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension

Abrégé

The disclosure provides an electrostatic discharge (ESD) protection device for protecting a core circuit coupled between a first power rail and a second power rail. The ESD protection device includes a pull-up element. The pull-up element includes a bidirectional switch element. A first terminal of the bidirectional switch element is coupled to a third power rail. A second terminal of the bidirectional switch element is coupled to a signal transmission wire. The core circuit is coupled to a signal connection pad through the signal transmission wire. A control terminal of the bidirectional switch element is coupled to a control circuit or a reference voltage.

Classes IPC  ?

• H02H 9/04 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension

Abrégé

An amplification circuit includes a first signal terminal, a second signal terminal, a first path, and a second path. The first path is coupled between the first signal terminal and the second signal terminal. The second path is coupled to be in parallel with at least a portion of the first path. The first path includes an input matching network, a first amplifier, and a first switch unit. A first terminal of the input matching network is coupled to the first signal terminal. An input terminal of the first amplifier is coupled to a second terminal of the input matching network. A first terminal of the first switch unit is coupled to a second terminal of the input matching network, and a second terminal of the first switch unit is coupled to a first reference voltage terminal. When the second path is enabled, the first switch unit is turned on.

Classes IPC  ?

• H03F 1/26 - Modifications des amplificateurs pour réduire l'influence du bruit provoqué par les éléments amplificateurs
• H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
• H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
• H03F 3/72 - Amplificateurs commandés, c.-à-d. amplificateurs mis en service ou hors service au moyen d'un signal de commande

Abrégé

A power detection device includes a set of power detectors, a set of voltage-to-current converters, a temperature compensation circuit, a current-to-voltage converter, and a level shifter. The set of power detectors is used to generate a set of power detection voltages. The set of voltage-to-current converters are coupled to the set of power detectors to generate a set of power detection currents according to the set of power detection voltages. The temperature compensation circuit is used to generate a temperature compensation current. The current-to-voltage converter is coupled to the set of voltage-to-current converters and the temperature compensation circuit to accumulate the set of power detection currents and the temperature compensation current to generate a summed current, and convert the summed current into a summed voltage. The level shifter is coupled to the current-to-voltage converter, and is used to receive the summed voltage to generate an output power voltage.

Classes IPC  ?

• G01R 21/14 - Compensation des variations de température
• G01R 21/00 - Dispositions pour procéder aux mesures de la puissance ou du facteur de puissance

Abrégé

Disclosed are an electrical overstress protection device and a communication system. A core circuit receives signals through a communication signal terminal. The EOS protection device includes an impedance switching element and an EOS protection element. A first terminal of the impedance switching element is coupled between the communication signal terminal and a switching element of the core circuit. A first terminal of the EOS protection element is coupled to a second terminal of the impedance switching element. The second terminal of the EOS protection element is coupled to a reference voltage. When operating normally, the impedance switching element controllably provides a high impedance to be turned off. When an EOS discharge operation occurs, the impedance switching element provides a low impedance to be turned on to discharge the charge to a reference voltage through the EOS protection element.

Classes IPC  ?

• H02H 9/04 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension

Abrégé

A multi-chip radio frequency circuit is coupled between a first port and a second port. The first port is disposed in a first chip and the second port is disposed in a second chip. The multi-chip RF circuit includes a first amplifying circuit, a transmission circuit, and a first switch. The first amplifying circuit is disposed in the first chip and coupled to the first port. The transmission circuit is disposed in the second chip and coupled to the second port. The transmission circuit further includes at least one transmission switch. The transmission switch and a first switch are used to select one of a first path and a second path between the first port and second port. Both of the first path and the second path pass through the first chip and the second chip, and respectively pass through the transmission circuit and the first amplifying circuit.

Classes IPC  ?

• H03F 3/19 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
• H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs

Abrégé

A logic circuit includes an input terminal for receiving an input signal, a first output terminal for outputting a first output signal, a second output terminal for outputting a second output signal, and three inverting circuits. A first inverting circuit is coupled between the input terminal and the first output terminal and includes a first depletion mode transistor. The first depletion mode transistor includes a second terminal coupled to a first node. A second inverting circuit is coupled between the first inverting circuit and the first output terminal and includes a second depletion mode transistor. The second depletion mode transistor includes a second terminal coupled to a second node. A third inverting circuit is coupled between the input terminal and the second output terminal. A first node voltage at the first node is lower than a second node voltage at the second node.

Classes IPC  ?

• H03K 19/0175 - Dispositions pour le couplageDispositions pour l'interface
• H03K 19/00 - Circuits logiques, c.-à-d. ayant au moins deux entrées agissant sur une sortieCircuits d'inversion

Abrégé

An amplification circuit may include an input terminal, an output terminal, a first amplification path and a second amplification path. The first amplification path may include a first transistor and a second transistor cascoded between the input terminal and the output terminal. The second amplification path may include a third transistor coupled between the input terminal and the output terminal. A control terminal of the first transistor and a control terminal of the third transistor are coupled to the input terminal. A first terminal of the second transistor may be coupled to a second terminal of the first transistor. The first amplification path and the second amplification path may be configured to operate independently of each other. A second terminal of the third transistor and a second terminal of the second transistor are coupled to a common node. In the second amplification path, the transistor closest to the common node is a common-source transistor or a common-emitter transistor.

Classes IPC  ?

• H03F 3/193 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs comportant des dispositifs à effet de champ
• H03F 1/32 - Modifications des amplificateurs pour réduire la distorsion non linéaire
• H03G 1/00 - Détails des dispositions pour le réglage de l'amplification

Abrégé

A semiconductor device includes a first set of transistors and a second set of transistors. The first set of transistors includes a first terminal, a second terminal, a control terminal and a bulk terminal, and the bulk terminal of the first set of transistors is floating. The second set of transistors includes a first terminal, a second terminal, a control terminal and a bulk terminal, and the first terminal, the second terminal and the control terminal of the second set of transistors being coupled to the first terminal, the second terminal and the control terminal of the first set of transistors, respectively. When the semiconductor device is in a steady state, the bulk terminal of the second set of transistors is decoupled from the bias terminal. When the semiconductor device is in a transient state, the bulk terminal of the second set of transistors is coupled to the bias terminal.

Classes IPC  ?

• H03F 1/26 - Modifications des amplificateurs pour réduire l'influence du bruit provoqué par les éléments amplificateurs
• H03F 3/72 - Amplificateurs commandés, c.-à-d. amplificateurs mis en service ou hors service au moyen d'un signal de commande

Abrégé

An acoustic wave device includes a first busbar segment, and two finger electrodes. The first busbar segment is disposed along a first direction. The first finger electrode extends in parallel to a second direction from a first terminal to a second terminal, and the first terminal thereof contacts the first busbar segment. The second finger electrode extends in parallel to the second direction from a first terminal to a second terminal, and the first terminal thereof contacts the first busbar segment. The second finger electrode is disposed to be separated from the first finger electrode. The first busbar segment has a first dimension and a second dimension both measured in parallel to the second direction. The first dimension is located corresponding to the first finger electrode, the second dimension is located corresponding to the second finger electrode, and the first dimension is different from the second dimension.

Classes IPC  ?

• H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
• H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
• H03H 9/145 - Moyens d'excitation, p. ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface

Abrégé

A transceiving method of signals and a radar apparatus are provided. The radar apparatus includes a transmitting circuit, multiple transmitting antennas, multiple receiving antennas, a receiving circuit, a selection controller and a selection circuit. The transmitting circuit generates a transmission signal based on the detection signal, wherein the detection signal has periodic changes. The transmitting antenna transmits a transmission signal. The receiving antenna receives a reflected signal. The receiving circuit generates an internal signal based on the detection signal and a radio frequency signal. The selection controller generates a control signal based on the period of the detection signal. The selection circuit selects one of multiple transmitting antennas to transmit the transmission signal and selects one of multiple receiving antennas to receive the reflected signal to generate the radio frequency signal based on the control signal generated by the selection controller.

Classes IPC  ?

• G01S 13/00 - Systèmes utilisant la réflexion ou la reradiation d'ondes radio, p. ex. systèmes radarSystèmes analogues utilisant la réflexion ou la reradiation d'ondes dont la nature ou la longueur d'onde sont sans importance ou non spécifiées
• G01S 7/03 - Détails de sous-ensembles HF spécialement adaptés à ceux-ci, p. ex. communs à l'émetteur et au récepteur
• G01S 13/42 - Mesure simultanée de la distance et d'autres coordonnées

Abrégé

A transceiving method of signals and a radar apparatus are provided. The radar apparatus includes a transmitting circuit, multiple transmitting antennas, multiple receiving antennas, a receiving circuit, a selection controller and a selection circuit. The transmitting circuit generates a transmission signal based on the detection signal. The receiving antenna receives multiple reflected signals. The selection controller generates a control signal based on the period of the detection signal. The selection circuit selects one of multiple transmitting antennas to transmit the transmission signal and selects one of multiple receiving antennas to receive the reflected signal to generate a radio frequency signal based on the control signal. Within one frame time, multiple transmission-reception combinations executed based on control signals at different times correspond to multiple time-division reflected signals, and the phase differences between at least two sets of two adjacent time-division reflected signals in time sequence are equal.

Classes IPC  ?

• G01S 13/00 - Systèmes utilisant la réflexion ou la reradiation d'ondes radio, p. ex. systèmes radarSystèmes analogues utilisant la réflexion ou la reradiation d'ondes dont la nature ou la longueur d'onde sont sans importance ou non spécifiées
• G01S 7/35 - Détails de systèmes non impulsionnels
• G01S 13/42 - Mesure simultanée de la distance et d'autres coordonnées

Abrégé

An amplifier control circuit includes a first bias unit and a second bias unit. The first bias unit outputs a first current to a first amplifier. The first bias unit includes a primary bias circuit and a preheat signal generation circuit. The primary bias circuit receives an operational voltage signal, outputs the first current and outputs a detection signal. Change of the operational voltage signal is related to change of the detection signal. The preheat signal generation circuit generates a preheat control signal according to the change of the detection signal. The second bias circuit outputs a second current to a second amplifier. The second current in a first period is larger than the second current in a second period. The first period starts after the operational voltage signal starts to change, and the second period starts after the first period ends.

Classes IPC  ?

• H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
• H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire

Abrégé

A transistor stack circuit including a first signal transmission port, a second signal transmission port, an impedance unit, a plurality of transistors, and a plurality of resistors is provided. The transistors are connected in series and coupled between the first signal transmission port and the second signal transmission port. A first terminal of each resistor is coupled to a common path. A second terminal of each resistor is coupled to a control terminal of a corresponding transistor among the transistors. The impedance unit is coupled between the common path and a reference voltage terminal. When an electrostatic discharge event occurs, an impedance value of the impedance unit is greater than twice of a resistance value of each resistor, and the transistors form a low-impedance path.

Classes IPC  ?

• H02H 9/04 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension

Abrégé

A radio frequency power amplifier includes an input terminal, at least two amplifier paths, an asymmetric power combination circuit, and an output terminal. The input terminal receives a radio frequency signal. Each of the amplifier paths is coupled to the input terminal. Each of the amplifier paths amplifies the radio frequency signal to generate a corresponding amplified radio frequency signal. The asymmetric power combination circuit is coupled to the amplifier paths and combines the amplified radio frequency signals generated by the amplifier paths to generate a combined radio frequency signal. The output terminal outputs the combined radio frequency signal. Each of the amplifier paths generates the corresponding amplified radio frequency signal simultaneously, and a reverse isolation of each of the amplifier paths is better than about 35 dB.

Classes IPC  ?

• H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
• H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs

Abrégé

Disclosed is an electrostatic discharge (ESD) protection circuit including a main transistor, a resistor element and a control circuit. A first voltage terminal is coupled to a second terminal of the main transistor and a first terminal of the resistor element. A second voltage terminal is coupled to a first terminal of the main transistor. The control circuit is coupled between a second terminal of the resistor element and a control terminal of the main transistor. When an ESD event occurs, the product of the capacitance value of a parasitic capacitance of the control circuit and the resistance value of the resistor element is greater than the duration of the ESD event, and the control circuit turns on the main transistor so that an ESD current flows through the main transistor.

Classes IPC  ?

• H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface

Abrégé

A radio frequency (RF) amplification circuit has an input terminal for receiving an RF input signal, an output terminal for providing an RF output signal, an amplification path, and a bypass path. The amplification path is coupled between the input terminal and output terminal and includes an amplifier. The bypass path and the amplification path are coupled in parallel between the input terminal and the output terminal, and the bypass path includes a bypass switch, a first node, a second node, a wiring segment, and a variable capacitive structure. The first node is located between the input terminal and the bypass switch. The second node is located between the first node and the bypass switch. The wiring segment is coupled between the first node and second node. The variable capacitive structure is coupled between the first and second nodes and includes a capacitive element and a switching element.

Classes IPC  ?

• H04B 1/04 - Circuits
• H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission

Abrégé

An amplification circuit includes a radio-frequency input terminal, a radio-frequency output terminal, a first amplification stage circuit, a second amplification stage circuit, and a variable impedance path. The radio-frequency input terminal is used to receive a radio-frequency signal. The radio-frequency output terminal is used to output the amplified radio-frequency signal. The first amplification stage circuit is coupled to the radio-frequency input terminal and the radio-frequency output terminal. The second amplification stage circuit is coupled to the radio-frequency input terminal and the radio-frequency output terminal. The variable impedance path is coupled to the first amplification stage circuit and the second amplification stage circuit. When the second amplification stage circuit is enabled, the variable impedance path has a low impedance. When the second amplification stage circuit is disabled, the variable impedance path has a high impedance.

Classes IPC  ?

• H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
• H03F 1/08 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs

Abrégé

A beam switching system, beam switching method, and antenna device are provided. The beam switching system includes a selection circuit and a branch line coupler. The selection circuit includes an input port for receiving the input radio frequency signal and two output ports. The selection circuit selects at least one of its two output ports to output the output radio frequency signal. The branch line coupler includes two input ports respectively coupled to two output ports of the selection circuit and used to receive the output radio frequency signal, and two output ports respectively used to couple two antennas.

Classes IPC  ?

• H04B 7/06 - Systèmes de diversitéSystèmes à plusieurs antennes, c.-à-d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station d'émission
• H04W 36/06 - Resélection d'une ressource de communication au point d'accès serveur

Abrégé

A coupler structure includes a main signal line, a first coupling line, a second coupling line and a spacer element. The main signal line is located on a first plane, the first coupling line is located on a second plane, and the second coupling line is located on a third plane, wherein the second plane and the third plane are both in parallel with the first plane, and the second plane and the third plane are both different from the first plane. The spacer element is connected to the main signal line. The projection of the spacer element on the first plane is located between the projection of the first coupling line on the first plane and the projection of the second coupling line on the first plane. The main signal line, the first coupling line and the second coupling line extend along a virtual line.

Classes IPC  ?

• H01P 5/18 - Dispositifs à accès conjugués, c.-à-d. dispositifs présentant au moins un accès découplé d'un autre accès consistant en deux guides couplés, p. ex. coupleurs directionnels
• H01Q 23/00 - Antennes comportant des circuits ou des éléments de circuit actifs qui leur sont intégrés ou liés
• H03F 3/19 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
• H04B 1/04 - Circuits
• H04B 17/10 - SurveillanceTests d’émetteurs

Abrégé

A system includes a primary coil, a series combination having a first conducting wire and a first capacitor coupled in series, a second conducting wire, and a secondary coil. A first end of the series combination is coupled to a first end of the primary coil. A first end of the second conducting wire is coupled to the first end of the primary coil. A second end of the second conducting wire is coupled to the second end of the series combination. A first end of the secondary coil is coupled to an output end.

Classes IPC  ?

• H01F 27/42 - Circuits spécialement adaptés à la modification ou la compensation des caractéristiques électriques des transformateurs, réactances ou bobines d'arrêt
• H01F 27/40 - Association structurelle de composants électriques incorporés, p. ex. fusibles
• H01F 38/14 - Couplages inductifs

Abrégé

A bias circuit is provided. The bias circuit includes a first resistor, a first transistor, a second transistor, and a third transistor. A first terminal of the first resistor is coupled to a system voltage. A first terminal of the first transistor is coupled to a second terminal of the first resistor. A second terminal of the first transistor is coupled to an output terminal of the bias circuit. A first terminal of the second transistor is coupled to the system voltage. A control terminal of the second transistor is coupled to a second terminal of the first resistor. A first terminal of the third transistor is coupled to the second terminal of the first transistor. A second terminal of the third transistor is coupled to a first reference voltage. A control terminal of the third transistor is coupled to a second terminal of the second transistor.

Classes IPC  ?

• H03F 3/19 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
• H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs

Abrégé

A directional coupler includes a main path, a coupling path, a first port, and a second port. The main path is used to propagate a first RF signal. The coupling path at least partially overlaps with the main path. The coupling path includes a first end, a second end, and at least one winding routed between the first end and the second end. The first port is coupled to the first end of the coupling path. The second port is coupled to the second end of the coupling path. At least one of the first port and the second port is located inside the at least one winding.

Classes IPC  ?

• H01P 5/18 - Dispositifs à accès conjugués, c.-à-d. dispositifs présentant au moins un accès découplé d'un autre accès consistant en deux guides couplés, p. ex. coupleurs directionnels

Abrégé

An acoustic wave device includes a first electrode, a piezoelectric layer and a second electrode. The piezoelectric layer is disposed at least partially on the first electrode. The second electrode is disposed at least partially on the piezoelectric layer. The second electrode includes an electrode body having an outline and a plurality of protrusions extending from the outline of the electrode body. The two ends of two adjacent ones of the plurality of protrusions are separated by a gap and the gap exposes at least a portion of the piezoelectric layer.

Classes IPC  ?

• H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
• H03H 9/13 - Moyens d'excitation, p. ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
• H03H 9/17 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique

Abrégé

An amplification circuit includes an amplifier, a first mirror-branch circuit, a second mirror-branch circuit, a first variable current source, a second variable current source, and an operation amplifier. The amplifier can receive an operation current and an input signal, and output the amplified input signal. The first mirror-branch circuit and the second mirror-branch circuit are coupled to the amplifier. The first variable current source is coupled to the first mirror-branch circuit and provides a first reference current. The second variable current source is coupled to the second mirror-branch circuit and provides a second reference current. The operation amplifier is coupled to the first mirror-branch circuit, the second mirror-branch circuit and the amplifier. The first reference current and the second reference current are related to the operation current.

Classes IPC  ?

• H03F 3/45 - Amplificateurs différentiels

Abrégé

An acoustic wave device and a fabricating method are provided. The acoustic wave device includes a substrate, a first frame, a first electrode, a piezoelectric layer and a second electrode. The substrate includes a first surface and a second surface opposite thereto. A reflector recess and a first recess may be depressed from the first surface. The first recess may at least partially surround the reflector recess, and may be separated from the reflector recess. The first frame is disposed in the first recess of the substrate. The first electrode is disposed on the substrate and contacts the first frame. The piezoelectric layer is disposed at least on the first electrode. The second electrode is disposed at least on the piezoelectric layer. The reflector recess of the substrate, the first electrode, the piezoelectric layer, and the second electrode at least partially overlap along a vertical direction.

Classes IPC  ?

• H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
• H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails

Abrégé

A voltage controlled oscillator includes a cross coupled pair circuit, a first capacitive circuit, a first inductor, a second inductor, a second capacitive circuit and a first switch circuit. The first capacitive circuit is arranged in parallel with the cross coupled pair circuit. The first inductor is arranged in parallel with the cross coupled pair circuit and has a center tapped node for receiving a power supply voltage. The second inductor is magnetically coupled with the first inductor and has a center tapped node for receiving a first control voltage. The second capacitive circuit is arranged in parallel with the second inductor. The first switch circuit is arranged in parallel with the second inductor and configured to be turned on or turned off by a second control voltage. The first control voltage and the second control voltage change synchronously.

Classes IPC  ?

• H03B 5/12 - Éléments déterminant la fréquence comportant des inductances ou des capacités localisées l'élément actif de l'amplificateur étant un dispositif à semi-conducteurs

Abrégé

A radio frequency circuit includes an amplifier circuit and a bias circuit. The amplifier circuit is configured to receive a bias signal and amplify a radio frequency signal. The bias circuit is coupled to the amplifier circuit, and is configured to provide the bias signal. The bias circuit includes a transistor and a resistor. The transistor is arranged near the amplifier circuit. The resistor is arranged near the amplifier circuit, and a first terminal of the resistor is coupled to a transmission line, and a second terminal of the resistor is coupled to a control terminal of the transistor. An interference signal is coupled to the transmission line. The resistor is located between the transistor and the transmission line.

Classes IPC  ?

• H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
• H03F 3/19 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs
• H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie

Abrégé

A circuit for detecting motion of an object in an environment. The circuit comprises a transmission chain, an envelope extraction circuit, and a detector circuit. The transmission chain includes a power amplifier, a sensing circuit, and a single antenna. By the single antenna, a first wireless signal related to a transmission signal is transmitted. The transmission signal is a continuous wave signal. The single antenna can receive a second wireless signal as an incoming signal. The second wireless signal is a reflected first wireless signal from the object. The sensing circuit can obtain a modulation signal by combining the continuous wave signal and the incoming signal. The modulation signal contains a Doppler shift caused by the motion of the object. The envelope extraction circuit can extract a signal envelope from the modulation signal. The detector circuit can determine the motion of the object according to the signal envelope.

Classes IPC  ?

• G01S 13/58 - Systèmes de détermination de la vitesse ou de la trajectoireSystèmes de détermination du sens d'un mouvement
• G01S 7/35 - Détails de systèmes non impulsionnels
• G01S 13/62 - Détermination du sens d'un mouvement

Abrégé

A front-end circuit and a semi-conductor device are provided. The front-end circuit includes an amplifying circuit, a switching circuit, a coupler and at least one bonding wire. The amplifying circuit has a first end for receiving a radio-frequency signal to be amplified. The switching circuit has a first end coupled to a second end of the amplifying circuit. The coupler has a first coupling element and a second coupling element arranged adjacently. A first end of the first coupling element is coupled to a second end of the switching circuit. A second end of the first coupling element is coupled to a signal transmission end. The bonding wire has a first end coupled to the first end of the first coupling element, and a second end of the bonding wire is coupled to the second end of the first coupling element.

Classes IPC  ?

• H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
• H01L 23/66 - Adaptations pour la haute fréquence
• H03H 7/38 - Réseaux d'adaptation d'impédance

Abrégé

An acoustic wave device and a manufacture method thereof are provided. The acoustic wave device comprises a first substrate, a plurality of first electrodes, a second substrate, a plurality of second electrodes and a film. The first substrate comprises a first surface and a second surface. The plurality of first electrodes are disposed on the second surface of the first substrate. The second substrate comprises a third surface and a fourth surface. The plurality of second electrodes are disposed on the third surface of the second substrate. The second surface of the first substrate faces the third surface of the second substrate, such that the plurality of first electrodes and the plurality of second electrodes are arranged between the first substrate and the second substrate. The film is disposed between the plurality of first electrodes and the plurality of second electrodes.

Classes IPC  ?

• H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
• H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
• H03H 9/00 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques

Abrégé

An amplify device and a semiconductor device are provided in the disclosure. The amplify device includes an amplify unit, a radio frequency signal combination circuit, a first conductive wire and a second conductive wire. The first conductive wire is coupled between an output end of the amplify unit and a first input end of the radio frequency signal combination circuit. The second conductive wire is coupled between the output end of the amplify unit and a second input end of the radio frequency signal combination circuit. Wherein, a length of the first conductive wire is different from a length of the second conductive wire.

Classes IPC  ?

• H03F 3/213 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
• H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide

Abrégé

A radio-frequency front-end module includes a common node, a first node, a second node, a third node, a first path, a second path and a third path. The first path may be disposed between the common node and the first node and may include an inductor. The second path may be disposed between the common node and the second node and may include a second switch. The third path may be disposed between the common node and the third node and include a third switch. When the second switch is turned on, the second path may transceive the second signal and the third switch may be turned off, such that the inductor in the first path may provide an inductive impedance for the second signal, and the third switch may provide a capacitive impedance for the second signal.

Classes IPC  ?

• H04B 1/48 - Commutation transmission-réception dans des circuits pour connecter l'émetteur et le récepteur à une voie de transmission commune, p. ex. par l'énergie de l'émetteur

Abrégé

A protection circuit including a voltage dividing circuit, a first comparator, a first switch, a second comparator, and a delay and logic circuit is provided. The voltage dividing circuit generates a first divided voltage and a second divided voltage based on a power voltage. The first comparator is configured to compare a reference voltage and the first divided voltage to generate a first comparison result. The second comparator is configured to compare the reference voltage and the second divided voltage to generate a second comparison result. The delay and logic circuit receives the first comparison result and the second comparison result. Wherein, according to a plurality of different states of the first comparison result and the second comparison result, the first switch is turned on to conduct part of current of the power voltage to a reference voltage terminal, or the first switch changes from turn-on to turn-off.

Classes IPC  ?

• H03K 5/00 - Transformation d'impulsions non couvertes par l'un des autres groupes principaux de la présente sous-classe
• H03K 3/0233 - Circuits bistables
• H03K 5/08 - Mise en forme d'impulsions par limitation, par application d'un seuil, par découpage, c.-à-d. par application combinée d'une limitation et d'un seuil
• H03K 5/24 - Circuits présentant plusieurs entrées et une sortie pour comparer des impulsions ou des trains d'impulsions entre eux en ce qui concerne certaines caractéristiques du signal d'entrée, p. ex. la pente, l'intégrale la caractéristique étant l'amplitude
• H03K 17/0812 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande

Abrégé

A radio frequency circuit is provided. The radio frequency circuit includes a first terminal, a second terminal, a power amplifier, and a coupling circuit. The power amplifier is coupled between the first terminal and the second terminal. The power amplifier is configured to receive a first signal. The coupling circuit includes a first coupling terminal, a second coupling terminal, and at least one transistor. The first coupling terminal is coupled to the power amplifier and the second terminal. The at least one transistor is connected in series between the first coupling terminal and the second coupling terminal. In a coupling mode, the at least one transistor is in an at least partial cut-off state, and the at least one transistor provides a coupling signal at the second coupling terminal through capacitive coupling. The first signal is controlled according to the coupling signal.

Classes IPC  ?

• H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
• H03K 17/56 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs
• H04B 1/40 - Circuits

Abrégé

A radio frequency switch circuit includes a series circuit. The series circuit includes a first series connection group and a second series connection group. The first series connection group includes a plurality of first transistors. The second series connection group includes a plurality of second transistors. Control terminals of the first transistors are all coupled to a first control node. Control terminals of the second transistors are all coupled to a second control node. When an electrostatic discharge event occurs, a voltage at the first control node is different from a voltage at the second control node. In a normal operation state, a switch state of the first series connection group and a switch state of the second series connection group are the same as each other.

Classes IPC  ?

• H03K 17/693 - Dispositifs de commutation comportant plusieurs bornes d'entrée et de sortie, p. ex. multiplexeurs, distributeurs
• H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
• H03K 19/003 - Modifications pour accroître la fiabilité

Abrégé

A manufacturing method of an acoustic wave device and an acoustic wave device are provided. The manufacturing method includes providing a piezoelectric substrate. A transducer and a solder layer are provided on the piezoelectric substrate, and the transducer is covered with a passivation layer. The method further includes forming a first photoresist layer on the piezoelectric substrate, and patterning the first photoresist layer to form a first patterned photoresist layer. The first patterned photoresist layer covers an upper surface of the passivation layer and exposes an upper surface of the solder layer. The method further includes forming a metal layer on the upper surface of the solder layer and the first patterned photoresist layer, and stripping the first patterned photoresist layer.

Classes IPC  ?

• H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
• H03H 9/25 - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface

Abrégé

The disclosure provides a radar apparatus, a signal processing circuit, and a signal processing method for radar apparatus. The radar apparatus includes a frequency synthesizer, a signal generator, and a transmitting front-end circuit. The frequency synthesizer generates a carrier signal. A frequency of the carrier signal changes with time within a sweep period of the carrier signal, and the carrier signal includes a frequency raising section and a frequency decreasing section. The signal generator generates a shaping signal. The shaping signal includes two sections. The two sections have different amplitudes. One of the two sections corresponds to a turn-around section between the frequency raising section and the frequency decreasing section. The transmitting front-end circuit is coupled to the frequency synthesizer and the signal generator and generates a transmitting signal according to the carrier signal and the shaping signal. In this way, the spurious peak on the spectrum is reduced.

Classes IPC  ?

• G01S 7/32 - Récepteurs mettant en forme des signaux échos pulsésRécepteurs formant des signaux non pulsés à partir de signaux échos pulsés
• G01S 13/34 - Systèmes pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées utilisant la transmission d'ondes continues modulées en fréquence, tout en faisant un hétérodynage du signal reçu, ou d’un signal dérivé, avec un signal généré localement, associé au signal transmis simultanément

Abrégé

An antenna device includes a first structural layer and a second structural layer. The first structural layer is located at a first plane and includes first antenna structures, a main feeding point, a first subsidiary feeding point and a transmission line. The main feeding point is located between a first transmission line segment and a second transmission line segment, which are respectively connected to different first antenna structures. First transmission paths are formed from the main feeding point to a part of the first antenna structures, and the first transmission paths pass through the first subsidiary feeding point. Second transmission paths are formed from the main feeding point to another part of the first antenna structures. The second structural layer is located at a second plane and includes a conductor, and at least part of projections of the first antenna structures projected onto the second plane surrounds the conductor.

Classes IPC  ?

• H01Q 9/28 - Éléments coniques, cylindriques, en cage, en ruban, en treillis ou éléments analogues ayant une surface de rayonnement étendueÉléments comportant deux surfaces coniques ayant le même axe et opposées par leurs sommets et alimentés par des lignes de transmission à deux conducteurs
• H01Q 1/36 - Forme structurale pour éléments rayonnants, p. ex. cône, spirale, parapluie
• H01Q 1/38 - Forme structurale pour éléments rayonnants, p. ex. cône, spirale, parapluie formés par une couche conductrice sur un support isolant
• H01Q 21/24 - Combinaisons d'unités d'antennes polarisées dans des directions différentes pour émettre ou recevoir des ondes polarisées circulairement ou elliptiquement ou des ondes polarisées linéairement dans n'importe quelle direction

Abrégé

A radio-frequency circuit can include a power amplifier, a first bias circuit and a second bias circuit. The power amplifier can include an input terminal used to receive a radio-frequency signal, and an output terminal used to output an amplified radio-frequency signal. The first bias circuit can include a first output terminal coupled to the input terminal of the power amplifier through a common node. The second bias circuit can include a second output terminal and a current adjustment circuit, where the second output terminal can be coupled to the common node, and the current adjustment circuit can include a transistor. The transistor can include a first terminal coupled to the second output terminal, a second terminal used to receive a reference voltage, and a control terminal.

Classes IPC  ?

• H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
• H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie

Abrégé

An amplification device includes a signal input terminal, a signal output terminal, an amplification unit, a coupler, an inductive element and a capacitive element. The amplification unit includes an input terminal and an output terminal, where the input terminal is coupled to the signal input terminal. The coupler includes an input terminal, an output terminal and a coupling terminal, where the input terminal is coupled to the output terminal of the amplification unit, and the output terminal is coupled to the signal output terminal. The inductive element is coupled to the coupler in parallel and includes a first terminal and a second terminal, where the first terminal is coupled to the output terminal of the amplification unit, and the second terminal is coupled to the output terminal of the coupler. The capacitive element is coupled between the output terminal of the coupler and a reference voltage terminal.

Classes IPC  ?

• H03F 3/191 - Amplificateurs accordés
• H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
• H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
• H03F 3/195 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés

Abrégé

A switch device includes a first switch unit, a second switch unit, a first sub-switch unit, a second sub-switch unit, a first resistor and a second resistor. The first switch unit is coupled to a radio-frequency terminal and coupled to the second switch unit in cascode. The first sub-switch unit is coupled to the second sub-switch unit in cascode. The first sub-switch unit is further coupled between control terminals of the first switch unit and the second switch unit. The first sub-switch unit is further coupled to a node between the first resistor and the first switch unit. The second sub-switch unit is further coupled to a node between the second resistor and the second switch unit. When the first switch unit and the second switch unit are transitioned, the first sub-switch unit and the second sub-switch unit can be turned on to discharge and/or neutralize accumulated charges.

Classes IPC  ?

• H03K 17/14 - Modifications pour compenser les variations de valeurs physiques, p. ex. de la température
• H03K 17/04 - Modifications pour accélérer la commutation
• H03K 17/041 - Modifications pour accélérer la commutation sans réaction du circuit de sortie vers le circuit de commande
• H03K 17/10 - Modifications pour augmenter la tension commutée maximale admissible
• H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
• H03K 17/68 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors bipolaires spécialement adaptée pour commuter des courants ou des tensions alternatifs

Abrégé

An object sensing method and a radar apparatus are provided. In the method, initial sensing data is obtained through a single antenna. The initial sensing data is generated according to an echo received by the single antenna. The initial sensing data includes sensing intensities of multiple time points. The initial sensing data is converted into pre-processing sensing data. The pre-processing sensing data includes a corresponding relationship between multiple distances and the sensing intensities at those time points. One or more feature parameters of the pre-processing sensing data are obtained. The feature parameters respond to the existence of one or more objects. Inertia of the feature parameter between those time points is determined. The inertia is a period when the object exists at those time points. The number of objects is determined according to inertia. Accordingly, the accuracy of number estimation is improved.

Classes IPC  ?

• G01S 13/42 - Mesure simultanée de la distance et d'autres coordonnées
• G01S 7/35 - Détails de systèmes non impulsionnels
• G01S 7/41 - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe utilisant l'analyse du signal d'écho pour la caractérisation de la cibleSignature de cibleSurface équivalente de cible

Abrégé

A radio frequency switch includes a signal terminal, a reference voltage terminal, and a shunt switch path. The shunt switch path includes a first transistor and a second transistor. The first transistor includes a first terminal coupled to the signal terminal, a second terminal, and a control terminal. The second transistor includes a first terminal coupled to the second terminal of the first transistor, a second terminal coupled to the reference terminal, and a control terminal. When the shunt switch path is switched to a first state, the shunt switch path has a first impedance. When the shunt switch path is switched to a second state, the shunt switch path has a second impedance, the first impedance and the second impedance being different. The first impedance is between 40 ohms to 85 ohms.

Classes IPC  ?

• H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ

Abrégé

An amplifying circuit includes a first transistor, a second transistor, and a switching circuit. A control terminal of the first transistor is coupled to an input terminal of the amplifying circuit, and a first terminal of the first transistor is coupled to a first reference end. The input terminal of the amplifying circuit receives a first radio frequency (RF) signal. A first terminal of the second transistor is coupled to a second terminal of the first transistor, and a second terminal of the second transistor is coupled to an output terminal of the amplifying circuit. The output terminal of the amplifying circuit outputs an amplified signal. The first transistor amplifies the first RF signal to generate a second RF signal. The switching circuit performs a switching operation to transmit the second RF signal to one of the first terminal and the control terminal of the second transistor.

Classes IPC  ?

• H03F 1/22 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de couplage dit "cascode", c.-à-d. étage avec cathode ou émetteur à la masse suivi d'un étage avec grille ou base à la masse respectivement
• H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
• H03F 3/193 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs comportant des dispositifs à effet de champ

Abrégé

A signal generation circuit, a radar apparatus, and a signal control method are provided. The signal generation circuit includes a digital-to-analog converter (DAC) and a mixer. The DAC is configured to convert an input digital signal into two signals in a first mode. A coding content of the input digital signal includes multiple bits. The mixer is coupled to the DAC to respectively input the two signals converted from the input digital signal to two input ports of the mixer in the first mode, to generate an output signal. An output power of the output signal corresponding to the input digital signal having a first coding content is different from an output power of the output signal corresponding to the input digital signal having a second coding content. An intensity of the output signal is related to a voltage difference between the two signals converted from the input digital signal.

Classes IPC  ?

• G01S 7/282 - Émetteurs
• H03D 7/14 - Montages équilibrés

Abrégé

A direct current (DC) offset calibration device and a method are used to calibrate a DC offset of a unit. The DC offset calibration device includes a signal generation unit, a to-be-calibrated unit, a measurement unit, and a compensation unit. The DC offset calibration method includes: using the to-be-calibrated unit to output a clipped signal resulting from a signal saturation effect; receiving a receiving signal correlated to the clipped signal, the receiving signal including an even harmonic resulting from the clipped signal; measuring a magnitude of the even harmonic to obtain a DC offset adjustment value accordingly; and adjusting the to-be-calibrated unit according to the DC offset adjustment value to calibrate the DC offset.

Classes IPC  ?

• H04B 17/21 - SurveillanceTests de récepteurs pour l’étalonnageSurveillanceTests de récepteurs pour la correction des mesures
• H03D 3/00 - Démodulation d'oscillations modulées en angle
• H04B 17/00 - SurveillanceTests

Abrégé

A feedback circuit coupled between an input terminal and an output terminal of an amplifier circuit includes an input terminal, an output terminal, a first set of transistors and a second set of transistors. The first set of transistors is coupled between the input terminal and the output terminal of the feedback circuit, and includes a first terminal, a second terminal, and a control terminal used to receive a first control signal to turn on or off the first set of transistors. The second set of transistors is coupled between the input terminal and the output terminal of the feedback circuit, and includes a first terminal, a second terminal, and a control terminal used to receive a second control signal to turn on or off the second set of transistors.

Classes IPC  ?

• H03F 1/34 - Circuits à contre-réaction avec ou sans réaction
• H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
• H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
• H03F 3/19 - Amplificateurs à haute fréquence, p. ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs

Abrégé

A switch device includes a driver circuit, a switch circuit and a level transition circuit. The driver circuit includes an input terminal for receiving an input signal, an output terminal for outputting an output signal, a first terminal coupled to a first reference terminal, and a second terminal coupled to a second reference terminal. The switch circuit includes a control terminal for receiving the output signal. The level transition circuit includes a first terminal for receiving the output signal, a second terminal coupled to a third reference terminal, and a third terminal for receiving the input signal. In a transition interval, the input signal is transitioned from a first input signal level to a second input signal level, the level transition circuit transitions the output signal from a first output signal level to a third output signal level between the first output signal level and a second output signal level.

Classes IPC  ?

• H03K 17/10 - Modifications pour augmenter la tension commutée maximale admissible
• H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p. ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande

Abrégé

A semiconductor device may include a compound substrate and a 3-dimensional inductor structure. The compound substrate may include a front surface and a back surface. The 3-dimensional inductor structure may include a front conductive stack, a back conductive layer, and at least one through-hole structure. At least one portion of the front conductive stack may include a first conductive layer disposed on the front surface of the compound substrate, and a second conductive layer disposed on the first conductive layer. The second conductive layer has a thickness ranging between 30 micrometers and 400 micrometers. The back conductive layer is disposed on the back surface of the compound substrate. The at least one through-hole structure penetrates through the compound substrate, and electrically connects the front conductive stack to the back conductive layer.

Classes IPC  ?

• H01L 23/64 - Dispositions relatives à l'impédance
• H01L 27/08 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type
• H01L 49/02 - Dispositifs à film mince ou à film épais

Abrégé

A radar signal device includes an antenna unit, a transmission circuit and a reception circuit. The antenna unit is used to concurrently transmit a transmission signal and receive a reception signal. The antenna unit includes a metal layer, a first feed structure and a second feed structure. An opening is formed on the metal layer. A first projection of the first feed structure on the metal layer at least partially overlaps with the opening. A second projection of the second feed structure on the metal layer at least partially overlaps with the opening. The antenna unit forms a first radiation pattern used to transmit the transmission signal and a second radiation pattern used to receive the reception signal. An angle between a co-polarized electric field direction of the first radiation pattern and a co-polarized electric field direction of the second radiation pattern is between 45 degrees and 135 degrees.

Classes IPC  ?

• H01Q 19/13 - Combinaisons d'éléments actifs primaires d'antennes avec des dispositifs secondaires, p. ex. avec des dispositifs quasi optiques, pour donner à une antenne une caractéristique directionnelle désirée utilisant des surfaces réfléchissantes où les surfaces sont concaves la source rayonnante primaire étant un élément rayonnant unique, p. ex. un dipôle, une fente, une terminaison de guide d'onde
• H01Q 1/32 - Adaptation pour l'utilisation dans ou sur les véhicules routiers ou ferroviaires

Abrégé

A transceiver includes an antenna configured to transmit a first wireless signal based on a transmission signal and receive a second wireless signal, the second wireless signal including a reflected first wireless signal from an object and the antenna transmitting the first wireless signal and receiving the second wireless signal at the same time. A transmission circuit is configured to generate the transmission signal and output the transmission signal to a first side of the antenna. A reception circuit is configured to receive a reception signal from a second side of the antenna, the antenna outputting the reception signal based on the second wireless signal. The first side is different from the second side.

Classes IPC  ?

• H04B 1/38 - Émetteurs-récepteurs, c.-à-d. dispositifs dans lesquels l'émetteur et le récepteur forment un ensemble structural et dans lesquels au moins une partie est utilisée pour des fonctions d'émission et de réception
• H01Q 5/50 - Dispositions d’alimentation ou d’adaptation pour un fonctionnement à large bande ou multibande
• H01Q 9/04 - Antennes résonnantes

Abrégé

An antenna apparatus is provided. The antenna apparatus includes a cavity element, a radiating element, and a feeding element. The cavity element includes an opening. The radiating element is located within the opening and disposed at a conductive layer. An outline of the radiating element and the opening form a surrounding slot. An imagining rectangle has four sides respectively abutted against an external outline of the surrounding slot. The feeding element is disposed at the same conductive layer. The feeding element includes a first section and a second section. A coupling distance is provided between the first section and the radiating element. A tail end of the first section is an open circuit. A shift distance is provided between the second section and a central line of the imagining rectangle.

Classes IPC  ?

• H01Q 13/18 - Antennes à fentes résonnantes la fente étant adossée à, ou formée par, une paroi limite d'une cavité résonnante
• H01Q 9/04 - Antennes résonnantes

Abrégé

A motion detecting system includes a microwave motion sensor and an MCU. After detecting a motion with a first configuration, the microwave motion sensor is configured to operate with a second configuration for detecting another motion. The MCU is configured to operate in different modes for performing corresponding actions based on whether the microwave motion sensor can detect motions with different configurations, thereby reducing power consumption. The present motion detecting system can determine the type of motions detected by the microwave motion sensor, thereby reducing the false alarm rate.

Classes IPC  ?

• G01S 13/56 - Discrimination entre objets fixes et mobiles ou entre objets se déplaçant à différentes vitesses pour la détection de présence

Abrégé

A switch device includes a first radio-frequency (RF) terminal, a second RF terminal, a first transistor, a second transistor, and a variable resistance element. The first transistor includes a first terminal coupled to the first RF terminal, a second terminal, and a control terminal coupled to a control signal terminal providing a control signal. The second transistor includes a first terminal coupled to the second terminal of the first transistor, a second terminal coupled to the second RF terminal, and a control terminal. The variable resistance element is coupled between the second terminal of the first transistor and a bias voltage terminal. When the first transistor and the second transistor are in a transient state, the variable resistance element provides a lower resistance. When the first transistor and the second transistor are in an ON state, the variable resistance element provides a higher resistance.

Classes IPC  ?

• H03K 17/0412 - Modifications pour accélérer la commutation sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande

Abrégé

An acoustic wave device includes a piezoelectric substrate, a transducer, and a depression. The transducer is disposed on a surface of the piezoelectric substrate, and includes a first bus bar, a first electrode, a second bus bar, and a second electrode. The first bus bar and the second bus bar extend along a second direction. The first electrode has a first end and extends from the first bus bar along a first direction. The first electrode and the second electrode are spaced apart from each other, and a gap is formed between the first end of the first electrode and an edge of the second bus bar. The depression is formed in the piezoelectric substrate and is depressed from the surface of the piezoelectric substrate. The first end of the first electrode is continuously joined to a sidewall of the depression along a depth direction.

Classes IPC  ?

• H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails

Abrégé

An acoustic wave device includes a piezoelectric substrate and a transducer. The piezoelectric substrate has a surface. The transducer is disposed on the surface. The transducer includes a first electrode, a second electrode, and at least one protrusion. The first electrode extends along a first direction and has a first end. The second electrode extends along the first direction and has a second end. The first electrode and the second electrode are spaced apart from each other along a second direction. The at least one protrusion is disposed at the first end of the first electrode. The at least one protrusion extends along the first direction and partially obstruct the first end.

Classes IPC  ?

• H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
• H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiquesRésonateurs électromécaniques Détails
• H03H 9/145 - Moyens d'excitation, p. ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface

Abrégé

A compensation circuit includes a resistor-capacitor circuit and a control circuit. The resistor-capacitor circuit is used to generate a first voltage when a reference signal is in a first state, and generate a second voltage and a third voltage when the reference signal is in a second state. The resistor-capacitor circuit includes a first resistor-capacitor sub-circuit and a second resistor-capacitor sub-circuit. The first resistor-capacitor sub-circuit and the second resistor-capacitor sub-circuit are coupled to the control circuit, and operate simultaneously to compute an ON time of a front end module. The control circuit is coupled to the resistor-capacitor circuit, and is used to acquire the ON time according to the first voltage, the second voltage, and the third voltage, and includes an adjustment circuit used to generate a bias signal according to the ON time, and output the bias signal to the front end module.

Classes IPC  ?

• G01R 29/027 - Indication de ce qu'une caractéristique d'impulsion est, soit supérieure ou inférieure à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée

Abrégé

An amplifier circuit includes an amplifier, a detector and an adjustment circuit. The amplifier includes a first transistor and a bias voltage terminal. The first transistor includes a first terminal coupled to a first reference voltage terminal, a second terminal coupled to a second reference voltage terminal, and a control terminal coupled to the bias voltage terminal of the amplifier. The second transistor includes a first terminal coupled to a third reference voltage terminal and the detector, and a second terminal coupled to the second reference voltage terminal. The detector outputs a detection signal related to a characteristic parameter of the second transistor. The adjustment circuit is coupled to the detector and the bias voltage terminal of the amplifier for performing an adjustment operation according to the detection signal.

Classes IPC  ?

• H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
• H03F 3/04 - Amplificateurs comportant comme éléments d'amplification uniquement des tubes à décharge ou uniquement des dispositifs à semi-conducteurs comportant uniquement des dispositifs à semi-conducteurs

Abrégé

An antenna apparatus is provided. The antenna apparatus includes a cavity element, a radiating element, and a feeding element. The cavity element includes an opening. The radiating element is located in the opening and is disposed at a conductive layer. An outline of the radiating element and the opening form a surround slot. An imaginary rectangle has four sides respectively abutted against an external outline of the surround slot. The feeding element is disposed at another parallel conductive layer. The feeding element includes two sections. There is a coupling spacing is between a section and the radiating element to feed into the radiating element through electric field coupling. A tail end of the section is an open circuit. Another section is an initial section of the feeding element inserted into the opening. There is a shifting spacing between the another section and a central line of the imaginary rectangle.

Classes IPC  ?

• H01Q 13/18 - Antennes à fentes résonnantes la fente étant adossée à, ou formée par, une paroi limite d'une cavité résonnante
• H01Q 9/04 - Antennes résonnantes
• H01Q 19/02 - Combinaisons d'éléments actifs primaires d'antennes avec des dispositifs secondaires, p. ex. avec des dispositifs quasi optiques, pour donner à une antenne une caractéristique directionnelle désirée Détails

Abrégé

A voltage state detector includes a voltage drop circuit, a pull-down circuit, a load circuit, a transistor, a pull-up circuit, first and second output terminals, and a logic circuit. The pull-down circuit is coupled to the voltage drop circuit. The transistor has a first terminal coupled to the load circuit, a second terminal coupled to the pull-down circuit, and a control terminal coupled to the voltage drop circuit. The pull-up circuit is coupled to the load circuit and the voltage drop circuit. The first output terminal is coupled to the first terminal of the transistor for outputting a first state determination signal. The second output terminal is coupled to the voltage drop circuit for outputting a second state determination signal. The logic circuit includes a NOR gate for performing an NOR operation on the first state determination signal and the second state determination signal to output a control signal.

Classes IPC  ?

• G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
• H03K 19/20 - Circuits logiques, c.-à-d. ayant au moins deux entrées agissant sur une sortieCircuits d'inversion caractérisés par la fonction logique, p. ex. circuits ET, OU, NI, NON

Abrégé

A method of manufacturing an electronic package structure is disclosed. A solder mask layer is formed on an upper surface of a substrate. A recessed area is formed in the solder mask layer. An electronic component is mounted on the substrate. Pads are disposed on the upper surface of the substrate. The pads respectively correspond to the bumps on a first surface of the electronic component. The pads are electrically connected to the bumps. A heat treatment is performed to make the first surface close to the substrate and form a cavity in the recessed area. The cavity is between the first surface of the electronic component, the solder mask layer and the upper surface of the substrate.

Classes IPC  ?

• H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
• H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide

Abrégé

A radio frequency (RF) switch includes a signal terminal, a reference voltage terminal and a shunt switch path. The shunt switch path includes a first sub-shunt circuit and a second sub-shunt circuit. The second sub-shunt circuit includes a first transistor and a second transistor coupled in parallel. When switched to a first state, the RF switch has first impedance; when switched to a second state, the RF switch has second impedance; and when switched to a third state, the RF switch has third impedance. The first impedance, the second impedance, and the third impedance are different.

Classes IPC  ?

• H04B 1/16 - Circuits
• H04B 1/18 - Circuits d'entrée, p. ex. pour le couplage à une antenne ou à une ligne de transmission
• H04B 1/44 - Commutation transmission-réception

Abrégé

A Doppler radar apparatus including a transmitting device, a receiving device and a narrowband interference suppression device is provided. The transmitting device is configured to transmit a first wireless signal. The receiving device is coupled to the transmitting device and is configured to receive a second wireless signal to generate a first digital signal. The first digital signal includes a Doppler signal component and a narrowband interference signal component, and a bandwidth of the narrowband interference signal component is smaller than a bandwidth of the Doppler signal component. The narrowband interference suppression device is coupled to the receiving device and is configured to perform interference suppression on the first digital signal to suppress the narrowband interference signal component in the first digital signal to generate an output digital signal.

Classes IPC  ?

• G01S 7/02 - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
• G01S 7/292 - Récepteurs avec extraction de signaux d'échos recherchés
• G01S 13/02 - Systèmes utilisant la réflexion d'ondes radio, p. ex. systèmes du type radar primaireSystèmes analogues
• G01S 13/58 - Systèmes de détermination de la vitesse ou de la trajectoireSystèmes de détermination du sens d'un mouvement

Abrégé

A switch device includes a first radio-frequency (RF) terminal, a second RF terminal, a first transistor, a second transistor, and a variable resistance element. The first transistor includes a first terminal coupled to the first RF terminal, a second terminal, and a control terminal coupled to a control signal terminal providing a control signal. The second transistor includes a first terminal coupled to the second terminal of the first transistor, a second terminal coupled to the second RF terminal, and a control terminal. The variable resistance element is coupled between the second terminal of the first transistor and a bias voltage terminal. When the first transistor and the second transistor are in a transient state, the variable resistance element provides a lower resistance. When the first transistor and the second transistor are in an ON state, the variable resistance element provides a higher resistance.

Classes IPC  ?

• H03K 17/0412 - Modifications pour accélérer la commutation sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande

Abrégé

A diplexer includes a first filter circuit, and a second filter circuit. The first filter circuit is coupled to a first port for providing a first signal path for a first radio frequency (RF) signal. The second filter circuit is coupled to the first port for providing a second signal path for a second RF signal. The first filter circuit includes a first tunable resonant circuit for tuning a first transmission zero corresponding to a first frequency multiplication of the first RF signal. The second filter circuit includes a second tunable resonant circuit for tuning a first transmission zero corresponding to a first frequency multiplication of the second RF signal. The first frequency multiplication of the first RF signal corresponding to the first filter circuit is a fourth harmonic of the first RF signal.

Classes IPC  ?

• H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
• H04B 1/16 - Circuits

Abrégé

A radio frequency (RF) device and a multi-band matching circuit thereof are provided. The multi-band matching circuit includes an inductance circuit, a first capacitance circuit, an inductor, and a second capacitance circuit. A first terminal of the inductance circuit is coupled to a RF signal input terminal of the multi-band matching circuit. A first terminal of the first capacitance circuit is coupled to a second terminal of the inductance circuit. A first terminal of the inductor and a first terminal of the second capacitance circuit are coupled to a second terminal of the first capacitance circuit. A second terminal of the inductor is coupled to a first reference voltage. A second terminal of the second capacitance circuit is coupled to a second reference voltage. The second capacitance circuit is controlled by a single-bit control signal to change a capacitance value of the second capacitance circuit.

Classes IPC  ?

• H03H 7/01 - Réseaux à deux accès sélecteurs de fréquence
• H03H 7/38 - Réseaux d'adaptation d'impédance
• H04B 1/10 - Dispositifs associés au récepteur pour limiter ou supprimer le bruit et les interférences

Abrégé

An amplifier circuit includes an amplifier for generating an amplified input signal according to an input signal, and an attenuator circuit coupled to the amplifier. The attenuator circuit includes an input terminal for receiving the input signal or the amplified input signal, an output terminal, a reference voltage terminal, a zeroth resistor-switch circuit, a first resistor-switch circuit, and a second resistor-switch circuit. The zeroth resistor-switch circuit includes a first terminal coupled to the input terminal, a second terminal coupled to the output terminal, a zeroth switch coupled to the first terminal of the zeroth resistor-switch circuit and the second terminal of the zeroth resistor-switch circuit, a zeroth resistor coupled between the first terminal of the zeroth resistor-switch circuit and the second terminal of the zeroth resistor-switch circuit, a first resistor coupled between the zeroth resistor and the second terminal of the zeroth resistor-switch circuit, and a first switch.

Classes IPC  ?

• H03F 1/12 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de moyens d'amortissement
• H03F 3/04 - Amplificateurs comportant comme éléments d'amplification uniquement des tubes à décharge ou uniquement des dispositifs à semi-conducteurs comportant uniquement des dispositifs à semi-conducteurs
• H03G 3/30 - Commande automatique dans des amplificateurs comportant des dispositifs semi-conducteurs
• H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs

Abrégé

A front end module includes a first radio frequency (RF) terminal, a second RF terminal, a third RF terminal, a transmission path and a reception path. The transmission path is formed between the first RF terminal and the third RF terminal. The reception path is formed between the first RF terminal and the second RF terminal. The reception path includes a first set of switches, a second set of switches, a third set of switches and an amplifier. An amplifier is coupled to the second set of switches and the second RF terminal. The third set of switches is coupled to the first set of switches and the second RF terminal. When a transmission signal is transmitted to the first RF terminal via the transmission path, the first set of switches, the second set of switches and the third set of switches are turned off.

Classes IPC  ?

• H04B 1/48 - Commutation transmission-réception dans des circuits pour connecter l'émetteur et le récepteur à une voie de transmission commune, p. ex. par l'énergie de l'émetteur
• H04B 1/16 - Circuits
• H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
• H04B 1/04 - Circuits

Abrégé

A radio frequency switch has an antenna end, a first signal end for transmitting a first radio frequency signal, a second signal end for transmitting a second radio frequency signal, a third signal end for transmitting a third radio frequency signal, a first series path having a first switch, a second series path having a second switch, a third series path having a third switch, a first shunt path coupled between the first signal end and a node, a second shunt path coupled between the second signal end and the node, a common path coupled between the node and a first reference voltage end, and a third shunt path coupled between the third signal end and a second reference voltage end. The first series path and the second series path are connected to a common ground pad via the common path.

Classes IPC  ?

• H04B 1/04 - Circuits
• H04B 1/40 - Circuits
• H04B 1/16 - Circuits
• H04B 1/44 - Commutation transmission-réception

Abrégé

A switch device includes a first node, a switch unit, an adjustment switch, an impedance element, a second node and a detection unit. A first terminal of the switch unit is coupled to the first node. A first terminal and a second terminal of the adjustment switch are respectively coupled to a second terminal of the switch unit and a reference voltage terminal. A first terminal and a second terminal of the impedance element are respectively coupled to the first terminal and the second terminal of the adjustment switch. The detection unit is coupled to the second node, and a control terminal of the switch unit and a control terminal of the adjustment switch. The detection unit detects a node signal at the second node to accordingly control the switch unit and the adjustment switch.

Classes IPC  ?

• H03K 17/56 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs
• H03H 11/04 - Réseaux sélectifs en fréquence à deux accès

Abrégé

A power amplifier has an amplifying transistor, a first resistor, a bias circuit, a second resistor, and a compensation circuit. The amplifying transistor amplifies a radio frequency (RF) signal to output an amplified RF signal. A control end of the amplifying transistor receives the RF signal. The first resistor provides a first resistance, and a second end of the first resistor is coupled to the control end of the amplifying transistor. The bias circuit has a bias transistor and is coupled to a first end of the first resistor. The second resistor provides a second resistance less than the first resistance, and a second end of the second resistor is coupled to the control end of the amplifying transistor. The compensation circuit has a compensation transistor, and an output end of the compensation circuit is coupled to a first end of the second resistor.

Classes IPC  ?

• H03F 3/24 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
• H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p. ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire

Abrégé

The switch device includes a first circuit. The first circuit has a first end coupled between a first terminal and a second terminal, and the first circuit has the second end coupled between the first terminal and the second terminal or coupled to a third terminal. The first circuit includes a first switch and a second switch. The first switch is coupled between the first end and the second end of the first circuit and is turned on or off according to a first control signal. The second switch is connected to the first switch in parallel and is turned on or off according to a second control signal. The first switch and the second switch include transistors of the same type. In a surge protection mode, the second switch is turned on to dissipate the surge current.

Classes IPC  ?

• H03K 17/56 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs

Abrégé

A frequency modulated continuous wave (FMCW) radar device and a signal processing method thereof are provided. The frequency modulated continuous wave radar device includes a transmitter stage circuit, a frequency synthesizer, a receiver stage circuit, a pre-stage circuit, and a signal processing circuit. The transmitter stage circuit transmits a transmitting signal. The frequency synthesizer generates the transmitting signal associated with a chirp period. The receiver stage circuit receives a receiving signal including a periodic interference signal with a noise period associated with the chirp period. The pre-stage circuit outputs a to-be-processed signal including multiple frames according to the receiving signal and the transmitting signal. The signal processing circuit groups the frames into multiple frame groups. The signal processing circuit generates a processed signal by sampling at least one frame from the multiple frames in each of the frame groups with an identical sampling rule.

Classes IPC  ?

• G01S 7/02 - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
• G01S 7/35 - Détails de systèmes non impulsionnels

Abrégé

A device of measuring a duty cycle includes a resistor-capacitor circuit and a control circuit. The resistor-capacitor circuit is used to generate a first voltage when a reference signal is in a first state, and generate a second voltage and a third voltage when the reference signal is in a second state. The control circuit is coupled to the resistor-capacitor circuit, and configured to acquire an ON-time according to the first voltage, the second voltage and the third voltage. The ON-time is a time interval during which the reference signal is in the first state.

Classes IPC  ?

• G01R 29/00 - Dispositions pour procéder aux mesures ou à l'indication de grandeurs électriques n'entrant pas dans les groupes
• G01R 29/027 - Indication de ce qu'une caractéristique d'impulsion est, soit supérieure ou inférieure à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée

Abrégé

A switch device structure includes RF1-st and RF2-nd input terminals, RFA-th, RFB-th and RFC-th output terminals, P2A-th, P1B-th and P1C-th paths, and first and second common paths. The P2A-th path includes a first terminal, and a second terminal coupled to the RFA-th output terminal. The P1B-th path includes a first terminal, and a second terminal coupled to the RFB-th output terminal. The P1C-th path includes a first terminal, and a second terminal coupled to the RFC-th output terminal. The first common path is coupled to the RF2-nd input terminal and the first terminal of the P2A-th path. The second common path is coupled to the RF1-st input terminal, the first terminal of the P1B-th path, and the first terminal of the P1C-th path. The first and second common paths cross each other on different planes to form a crossover.

Classes IPC  ?

• H03K 17/693 - Dispositifs de commutation comportant plusieurs bornes d'entrée et de sortie, p. ex. multiplexeurs, distributeurs
• H01P 1/10 - Dispositifs commutateurs ou interrupteurs
• H04B 1/44 - Commutation transmission-réception

Abrégé

A filter integrated circuit, including an acoustic wave filter chip and a matching circuit, is provided. The acoustic wave filter chip is covered upon a substrate. The matching circuit is disposed on the substrate to provide matching impedance to the acoustic wave filter chip. A first pad and a second pad of the matching circuit are respectively connected to a first signal terminal and a second signal terminal of the acoustic wave filter chip. First terminals of a first coil inductor and a second coil inductor of the matching circuit are respectively connected to the first pad and the second pad of the substrate. The first coil inductor is adjacent to the second coil inductor, so that mutual inductance and parasitic capacitance are formed, so that the matching circuit and the acoustic wave filter chip jointly generate a transmission zero point located in a triple fundamental frequency range.

Classes IPC  ?

• H03H 9/54 - Filtres comprenant des résonateurs en matériau piézo-électrique ou électrostrictif
• H03H 7/38 - Réseaux d'adaptation d'impédance
• H03H 9/125 - Moyens d'excitation, p. ex. électrodes, bobines
• H03H 9/17 - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique

Abrégé

A driving circuit includes a first reference terminal, a second reference terminal, at least one input terminal, an output terminal, a first transistor, a second transistor, a switch module, and at least one control signal terminal. The at least one input terminal receives at least one input signal. The output terminal outputs an output signal in response to the at least one input signal. The first transistor and the second transistor respectively include control terminals coupled to the at least one input terminal. The switch module includes at least one control terminal coupled to the at least one control signal terminal to receive at least one control signal. The at least one input signal has a transition period. The switch module can be turned off according to the at least one control signal.

Classes IPC  ?

• H03K 3/01 - Circuits pour produire des impulsions électriquesCircuits monostables, bistables ou multistables Détails

Abrégé

An occupancy detection apparatus has a switch, a first antenna, a second antenna, a transmitter, and a motion detection circuit. The occupancy detection apparatus monitors for a first motion in a first region using the first antenna using a first motion detection parameter. When no first motion is sensed by the monitoring using the first antenna, the occupancy detection apparatus monitors for a second motion in a second region using the second antenna using a second motion detection parameter. When no second motion is sensed by monitoring using the second antenna, the occupancy detection apparatus designates a space, which encompasses the second region, as unoccupied. The first region and the second region overlap one another, and the first motion detection parameter is different from the second motion detection parameter.

Classes IPC  ?

• G01S 13/04 - Systèmes déterminant la présence d'une cible
• F21V 23/04 - Agencement des éléments du circuit électrique dans ou sur les dispositifs d’éclairage les éléments étant des interrupteurs
• G01S 13/56 - Discrimination entre objets fixes et mobiles ou entre objets se déplaçant à différentes vitesses pour la détection de présence
• H05B 47/19 - Commande de la source lumineuse par télécommande via une transmission sans fil
• H05B 47/115 - Commande de la source lumineuse en réponse à des paramètres détectés en détectant la présence ou le mouvement d'objets ou d'êtres vivants

Abrégé

A radar apparatus and an interference suppression method are provided. The radar apparatus includes a clock generator, an analog to digital converter (ADC), and a notch filter. The clock generator is configured to generate a sampling frequency. The ADC is coupled to the clock generator, and is configured to convert an analog signal into a digital signal according to the sampling frequency. The notch filter is coupled to the ADC, and is configured to attenuate one or more interfered frequencies of the digital signal. The interfered frequencies are related to the sampling frequency. Accordingly, the interference at a specific frequency and harmonics thereof may be suppressed.

Classes IPC  ?

• G01S 13/32 - Systèmes pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées
• G01S 7/02 - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
• G01S 7/28 - Détails des systèmes à impulsions

Abrégé

An amplifier circuit having an adjustable gain is provided. The amplifier circuit includes an input terminal, an output terminal, an amplifier, and an attenuation circuit. The input terminal receives an input signal, which is in turn received by an input terminal of the amplifier. An output terminal of the amplifier outputs the input signal that is amplified. The attenuation circuit is coupled between the output terminal of the amplifier and the output terminal to provide a plurality of attenuation to the input signal that is amplified and generate a first attenuation signal, or between the input terminal and the output terminal to provide the plurality of attenuations to the input signal and generate a second attenuation signal. A difference between an impedance value of the input terminal of the attenuation circuit and an impedance value of the output terminal of the attenuation circuit is within a predetermined range.

Classes IPC  ?

• H03F 1/12 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de moyens d'amortissement
• H03F 3/45 - Amplificateurs différentiels
• H03F 3/50 - Amplificateurs dans lesquels le signal d'entrée est appliqué — ou le signal de sortie est recueilli — sur une impédance commune aux circuits d'entrée et de sortie de l'élément amplificateur, p. ex. amplificateurs dits "cathodynes"