Provided is a plasma processing method capable of providing, in plasma processing of an electronic device substrate in which a semiconductor substrate having a copper film on a surface is etched using a photoresist and plating processing is performed, effects of (1) chemical reduction of the copper film, (2) high-speed ashing of the photoresist, and (3) hydrophilization of an inner surface of a via. The plasma processing method for plating processing of an electronic device substrate according to the present invention includes: a) a step of disposing the electronic device substrate such as a semiconductor substrate, a lead frame, or the like in a processing chamber; b) a step of supplying a source gas consisting of hydrogen and water vapor to the processing chamber, the source gas being obtained from a water electrolysis apparatus; and c) a step of subjecting the electronic device substrate to plasma processing by converting the source gas in the processing chamber into plasma.
The present invention provides a plasma processing method which is capable of achieving the effects of (1) reduction of a copper layer, (2) high-speed ashing of a photoresist and (3) hydrophilization of the inner surface of a via during plasma processing of a substrate for electronic devices, in said plasma processing a semiconductor substrate that has a copper layer in the surface being etched with use of a photoresist and being subjected to plating. A plasma processing method for plating of a substrate for electronic devices according to the present invention is characterized by comprising: (a) a step in which a substrate for electronic devices such as a semiconductor substrate, a lead frame or the like is arranged in a processing chamber; (b) a step in which a starting material gas that is composed of hydrogen and water vapor, and is obtained from an apparatus that electrolyzes water is supplied to the processing chamber; and (c) a step in which plasma processing is performed on the substrate for electronic devices by exciting the starting material gas in the processing chamber into a plasma.
B32B 15/085 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique comprenant des polyoléfines
B32B 38/00 - Opérations auxiliaires liées aux procédés de stratification
2O plasma; and a step of mating the bonding surface of the first material and a bonding surface of the second material. According to the method, the cycloolefin polymer (COP) can be bonded to a target material without applying high pressure or high temperature, and without affecting the optical properties.
A vibration detection element (10) is provided with base material sections (1-3), a supporting member (22), a supporting member (32), and a vibrator (4). The base material sections (1-3) include a space section (SP) having a bottom surface (21A) and a bottom surface (31A) facing the bottom surface (21A). The supporting member (22) protrudes in the direction from the bottom surface (21A) to the bottom surface (31A) of the space section (SP). The supporting member (32) protrudes in the direction from the bottom surface (31A) to the bottom surface (21A) of the space section. The vibrator (4) is disposed in contact with the supporting member (22) or the supporting member (32) such that the vibrator can vibrate in the space section (SP), said vibrator having a thickness less than 10 μm. Each of the supporting members (22, 32) includes a plurality of supporting sections that prevent the vibrator (4) from coming into contact with the bottom surface (21A) or the bottom surface (31A).
G01N 5/02 - Analyse des matériaux par pesage, p. ex. pesage des fines particules séparées d'un gaz ou d'un liquide en absorbant ou adsorbant les constituants d'un matériau et en déterminant la variation de poids de l'adsorbant, p. ex. en déterminant la teneur en eau
B81B 3/00 - Dispositifs comportant des éléments flexibles ou déformables, p. ex. comportant des membranes ou des lamelles élastiques
This method for joining cycloolefin polymers (COP) is for joining a first material 81 that is a COP to a second material 82 that is, for example, a COP or glass, the method including: a step of exposing at least the joining surface of the first material 81 to H2O plasma; and a step of joining the joining surface of the first material 81 to the joining surface of the second material. According to this method, it is possible to join a cycloolefin polymer (COP) to a partner material without applying high pressure or a high temperature and without altering optical characteristics.
The present invention provides a light beam measuring instrument that can securely receive light reflected by a sample. The light beam measuring instrument 1 includes an optical axis tilting mechanism 13 that includes a first tilting mechanism 131 and a second tilting mechanism 132. From the optical axis A1 of irradiation light beam emitted from a light beam source 112, the first tilting mechanism 131 tilts the optical axis A1 about the first tilting axis T1. The second tilting mechanism 132 tilts the optical axis A1 about the second tilting axis T2. The light beam measuring instrument 1 can receive the light reflected by the semiconductor chip C by means of operation of the optical axis tilting mechanism 13 even if the light reflected by the semiconductor chip C is tilted. Accordingly, this apparatus can securely perform measurement or inspection using the light beam.
09 - Appareils et instruments scientifiques et électriques
10 - Appareils et instruments médicaux
11 - Appareils de contrôle de l'environnement
37 - Services de construction; extraction minière; installation et réparation
Produits et services
Chemical processing machines and apparatus; textile machines
and apparatus; glassware manufacturing machines and
apparatuses; plastic processing machines and apparatuses;
semiconductor manufacturing machines and systems; pneumatic
or hydraulic machines and instruments; valves [machine
elements not for land vehicles]. Ozonisers [ozonators]; laboratory apparatus and instruments;
measuring or testing machines and instruments; epitaxial
semiconductor elements; DNA chips for experiments and tests;
electronic machines, apparatuses and their parts. Medical apparatuses and instruments. Equipments for sterilizing medical devices. Repair or maintenance of semiconductor manufacturing
machines and systems; repair or maintenance of sterilization
equipments for medical use.
The present invention provides a method for etching a sapphire substrate wherein a photoresist pattern is formed on a sapphire substrate that is used for a semiconductor light emitting element, and after irradiation of ultraviolet light having a wavelength of 400 nm or less, dry etching is carried out using the photoresist pattern as a mask. The method for etching a sapphire substrate is characterized by comprising: a pre-baking step wherein a photoresist is applied and then the sapphire substrate is heated before irradiation of ultraviolet light at a temperature that is higher than the temperature during the irradiation of ultraviolet light; a post-baking step wherein the sapphire substrate is heated after the irradiation of ultraviolet light at a temperature higher than the temperature of the pre-baking step; and an etching step wherein a plurality of projected portions are formed on the sapphire substrate by carrying out dry etching using the photoresist pattern as a mask after the post-baking step, said projected portions each having a side wall that is at an angle of 90˚ or less with respect to the surface of the sapphire substrate.
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
An induction coil composed of n pieces of identically shaped coil elements (where n is equal to or greater than two), which are rotation-symmetrically arranged with respect to an axis normal to the surface of an object to be processed, is provided above the object, the coil elements being electrically connected in parallel. Each of the coil elements of the induction coil encircles the aforementioned axis, with the ground end and the feed end located at the same position on a projection plane on the object with the ground end under the feed end. Each coil element has a bottom portion shaped like an arc having a predetermined width and a central angle of 360°/n, with the ground end at one end thereof, and a feed portion shaped like an arc having a predetermined width, with the feed end at one end thereof, the feed portion being located above the bottom portion and electrically connected to the same bottom portion. It is also possible to assemble a plurality of coil elements so that the ground end of each coil element is located immediately below the feed end of another coil element.
Above an object to be processed, n coil elements (n is two or more integer) having the same shape are arranged axial-symmetrically with respect to an axis which is normal of the surface of the object, and the coil elements are electrically connected parallel to one another to form an induction coil. Each coil element is a circle whose center is the above axis, has a ground end and a feed end just above the ground end in the same point when the coil is projected onto the projection plane of the object. The coil element comprises a lower surface part having the ground end at one end, a predetermined width, and an arc shape the center angle of which is 360°/n and a feed part having the feed end at one end, a predetermined width, and an arc shape, and is disposed at a level higher than that of the lower surface part, and electrically connected to the lower surface part. Such coil elements can be so combined that the feed end of one coil element is just above the ground end of another coil element.
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p. ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
C23C 16/507 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes externes, p. ex. dans des réacteurs de type tunnel
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
A plasma processing apparatus comprises a plasma producing vessel having a truncated corn shape the diameter of which increases toward an object to be processed and an induction coil composed of n coil elements (n is two or more integer) having the same shape, wound around the outer surface of the plasma producing vessel in rotation symmetry whose axis is a normal to the surface of the object, and electrically connected parallel to one another. Each coil element is so wound around the plasma producing vessel as to have a ground end inside generally the same perpendicular to the above axis and a feed end outside the perpendicular. Each coil has an inner surface part having the ground end at one end, a predetermined width and an arc shape the center angle of which is 360°/n and a feed part having the feed end at one end, a predetermined width, and an arc shape, disposed outside the inner surface part, and electrically connected to the inner surface part. Such coil elements can be so combined that outside the ground end of one coil element, the feed end of another coil element is disposed.
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p. ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
C23C 16/507 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes externes, p. ex. dans des réacteurs de type tunnel
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
07 - Machines et machines-outils
09 - Appareils et instruments scientifiques et électriques
37 - Services de construction; extraction minière; installation et réparation
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
Produits et services
Chemicals. Chemical processing machines and apparatus; textile machines
and apparatus; glassware manufacturing machines and
apparatus; plastic processing machines and apparatus;
semiconductor manufacturing machines and systems; pneumatic
or hydraulic machines and instruments; valves (machine
elements not for land vehicles). Ozonisers (ozonators); laboratory apparatus and instruments;
measuring or testing machines and instruments; power
distribution or control machines and apparatus; compound
semiconductor epitaxial substrate; biochips for experiments. Pump repair or maintenance; repair or maintenance of
laboratory apparatus and instruments; repair or maintenance
of chemical processing machines and apparatus; repair or
maintenance of semiconductor manufacturing machines and
systems; repair or maintenance of textile machines and
apparatus; repair or maintenance of plastic processing
machines and apparatus. Reproduction of silicon wafers; MEMS processing on silicon
wafers; processing of semiconductor wafers including etching
and depositing; processing of rubber; processing of
plastics; ceramic processing; processing of glass.
09 - Appareils et instruments scientifiques et électriques
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
37 - Services de construction; extraction minière; installation et réparation
Produits et services
Chemical processing machines and apparatus, namely, chemical etching machines, chemical depositing machines and chemical cleaning machines; plastic processing machines, namely, plastic surface grinding machines and plastic surface coating machines; semiconductor manufacturing machines; semiconductor manufacturing systems comprised of semiconductor manufacturing machines; gas valves being parts of machines and not for land vehicles [ Ozonisers; semiconductors made from compound semiconductor epitaxial substrate; and laboratory equipment, namely, biochips for experiments ] [ Custom manufacture of reproductions of silicon wafers; MEMS processing on silicon wafers; processing of semiconductor wafers including etching and depositing; processing of rubber; processing of plastics; ceramic processing; processing of glass ] [ Pump repair and maintenance; repair or maintenance of chemical processing machines and apparatus; repair or maintenance of semiconductor manufacturing machines and systems; repair or maintenance of plastic processing machines and apparatus ]
