According to one embodiment, a magnesium-recycling hydrogen generation system includes: a by-product acquisition unit that separates a by-product from a post-reaction solution, which is a solution after reacting with a hydrogen generation material containing a hydrogen-containing magnesium compound that generates hydrogen via a reaction with the solution, to acquire the by-product including more than one type of oxygen-containing magnesium compound that contains oxygen produced by the reaction, a raw material production unit that reacts the by-product with a halogen-containing substance containing halogen and other atoms than the halogen to produce a raw material containing magnesium halide, a hydrogen generation material production unit that reduces the raw material with plasma containing hydrogen to produce the hydrogen generation material, and a hydrogen generator that reacts the hydrogen generation material with the solution to generate hydrogen.
C01B 3/10 - Production d'hydrogène ou de mélanges gazeux contenant de l'hydrogène par réaction de composés inorganiques comportant un hydrogène lié électropositivement, p. ex. de l'eau, des acides, des bases, de l'ammoniac, avec des agents réducteurs inorganiques avec des métaux par réaction de la vapeur d'eau avec des métaux
Producing method for producing magnesium hydride, power generation system using magnesium hydride, and producing apparatus for producing magnesium hydride
One object of the present disclosure is to provide a production method of magnesium hydride that is free of carbon dioxide and has high production efficiency, a power generation system that does not emit carbon dioxide or radiation using magnesium hydride, and an apparatus for producing magnesium hydride; therefore, the method for producing magnesium hydride of the present disclosure comprises a procedure for irradiating a magnesium compound different from magnesium hydride with hydrogen plasma, and a procedure for depositing a magnesium product containing magnesium hydride on a depositor for depositing magnesium hydride disposed within the range in which hydrogen plasma is present, wherein the surface temperature of the depositor is kept no more than a predetermined temperature at which magnesium hydride precipitates.
C22B 5/12 - Procédés généraux de réduction appliqués aux métaux par voie sèche par des gaz
B01J 19/12 - Procédés utilisant l'application directe de l'énergie ondulatoire ou électrique, ou un rayonnement particulaireAppareils à cet usage utilisant des radiations électromagnétiques
C01B 3/00 - HydrogèneMélanges gazeux contenant de l'hydrogèneSéparation de l'hydrogène à partir de mélanges en contenantPurification de l'hydrogène
C01B 6/04 - Hydrures des métaux alcalins, des métaux alcalino-terreux, du béryllium ou du magnésiumLeurs complexes d'addition
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01M 8/065 - Combinaison d’éléments à combustible avec des moyens de production de réactifs ou pour le traitement de résidus avec des moyens de production des réactifs gazeux par dissolution des métaux ou des alliagesCombinaison d’éléments à combustible avec des moyens de production de réactifs ou pour le traitement de résidus avec des moyens de production des réactifs gazeux par déshydruration de substances métalliques
3.
Ion implantation apparatus and control method thereof
A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
An ion source device has a configuration in which a cathode is provided in an arc chamber having a space for plasma formation, and a repeller is disposed to face a thermal electron discharge face of the cathode by interposing the space for plasma formation therebetween. An external magnetic field that is induced by a source magnetic field unit is applied to the space for plasma formation in a direction parallel to an axis that connects the cathode and the repeller. An opening is provided in a place corresponding to a portion in the repeller with the highest density of plasma that is formed in the space for plasma formation, and an ion beam is extracted from the opening.
An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.
H01J 37/304 - Commande des tubes par une information en provenance des objets, p. ex. signaux de correction
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
6.
Impurity-doped layer formation apparatus and electrostatic chuck protection method
An electrostatic chuck protection method includes providing an exposed chuck surface with a protective surface for preventing adherence of foreign materials including a substance exhibiting volatility in a vacuum environment, and removing the protective surface in order to perform a process of forming a substrate electrostatically held on the chuck surface with a surface layer including a substance having volatility in a vacuum chamber. The protective surface may be provided when a low vacuum pumping mode of operation is performed in a vacuum environment surrounding the chuck surface.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
7.
Ion implantation apparatus and ion implantation method
An ion implantation method in which an ion beam is scanned in a beam scanning direction and a wafer is mechanically scanned in a direction perpendicular to the beam scanning direction, includes setting a wafer rotation angle with respect to the ion beam so as to be varied, wherein a set angle of the wafer rotation angle is changed in a stepwise manner so as to implant ions into the wafer at each set angle, and wherein a wafer scanning region length is set to be varied, and, at the same time, a beam scanning speed of the ion beam is changed, in ion implantation at each set angle in a plurality of ion implantation operations during one rotation of the wafer, such that the ions are implanted into the wafer and dose amount non-uniformity in a wafer surface in other semiconductor manufacturing processes is corrected.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
8.
Ion implantation method and ion implantation apparatus
An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
9.
Ion implantation method and ion implantation apparatus
An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.
After formation of a silicon Fin part on a silicon substrate, a thin film including an impurity atom which becomes a donor or an acceptor is formed so that a thickness of the thin film formed on the surface of an upper flat portion of the silicon Fin part becomes large relative to a thickness of the thin film formed to the surface of side wall portions of the silicon Fin part. A first diagonal ion implantation from a diagonal upper direction to the thin film is performed and subsequently a second diagonal ion implantation is performed from an opposite diagonal upper direction to the thin film. Recoiling of the impurity atom from the inside of the thin film to the inside of the side wall portions and to the inside of the upper flat portion is realized by performing the first and second diagonal ion implantations.
H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges
H01L 21/425 - Bombardement par des radiations par des radiations d'énergie élevée produisant une implantation d'ions
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 21/223 - Diffusion des impuretés, p. ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductricesRedistribution des impuretés, p. ex. sans introduction ou sans élimination de matériau dopant supplémentaire en utilisant la diffusion dans ou hors d'un solide, à partir d'une ou en phase gazeuse
11.
Ion beam irradiation system and ion beam irradiation method
An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.
Sen Corporation an Shi and Axcelis Company (Japon)
Inventeur(s)
Tsukihara, Mitsukuni
Yagita, Takanori
Sogabe, Hiroshi
Yumiyama, Toshio
Kabasawa, Mitsuaki
Abrégé
An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/28 - Microscopes électroniques ou ioniquesTubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
G21K 1/08 - Déviation, concentration ou focalisation du faisceau par des moyens électriques ou magnétiques
13.
Electrostatic beam deflection scanner and beam deflection scanning method
SEN Corporation, an SHI and Axcelis Company (Japon)
Inventeur(s)
Tsukihara, Mitsukuni
Kabasawa, Mitsuaki
Amano, Yoshitaka
Matsushita, Hiroshi
Abrégé
A beam deflection scanner performs reciprocating deflection scanning with an ion beam or a charged particle beam to thereby periodically change a beam trajectory and comprises a pair of scanning electrodes installed so as to be opposed to each other with the beam trajectory interposed therebetween and a pair of correction electrodes installed in a direction perpendicular to an opposing direction of the pair of scanning electrodes, with the beam trajectory interposed therebetween, and extending along a beam traveling axis. Positive and negative potentials are alternately applied to the pair of scanning electrodes, while a correction voltage is constantly applied to the pair of correction electrodes. A correction electric field produced by the pair of correction electrodes is exerted on the ion beam or the charged particle beam passing between the pair of scanning electrodes at the time of switching between the positive and negative potentials.
A beam processing system is for causing a particle beam extracted from a beam generating source to pass through a mass analysis magnet device, a mass analysis slit, and a deflection scanner in the order named, thereby irradiating the particle beam onto a processing object. The mass analysis slit is installed between the mass analysis magnet device and the deflection scanner at a position where the particle beam having passed through the mass analysis magnet device converges most in a lateral direction. A first DC quadrupole electromagnet and a second DC quadrupole electromagnet are installed on an upstream side and a downstream side of the mass analysis slit, respectively.
brevets